Superconducting wire manufacturing equipment

Abstract

A superconducting wire manufacturing device capable of reinforcing the adhesive strength between a substrate and a buffer layer is provided. [Solution] The present invention relates to a superconducting wire manufacturing apparatus, and relates to a superconducting wire manufacturing apparatus that can perform a predetermined pretreatment process before a buffer layer is vapor-deposited on a substrate to reinforce the adhesion between the substrate and the buffer layer.

Description

Technical Field

[0001] The present disclosure relates to a manufacturing apparatus for a superconducting wire. Before a buffer layer is deposited on a substrate, a predetermined pretreatment process is performed to reinforce the adhesion between the substrate and the buffer layer. The present disclosure relates to a manufacturing apparatus for a superconducting wire.

Background Art

[0002] A superconductor has no electrical resistance at the critical temperature and can conduct a large amount of current. Recently, research on second-generation high-temperature superconductors (coated conductors) in which a superconducting film is formed on a thin buffer layer or a metal substrate having a biaxially oriented texture has been actively conducted.

[0003] Second-generation high-temperature superconductors can be applied to various fields. For example, a wire using a second-generation high-temperature superconductor has a current transport capacity per unit area that is significantly superior to that of a general metal wire. A wire using a second-generation high-temperature superconductor can reduce the power loss of electrical equipment and can be used in fields such as MRI, superconducting magnetic levitation railways, and superconducting propulsion ships.

[0004] FIG. 1 is a diagram corresponding to an example of a superconducting wire. As shown in the figure, the superconducting wire has a metal substrate, a buffer layer formed on the substrate, a superconducting layer formed on the buffer layer, and a protective layer formed on the superconducting layer.

[0005] However, when such a multilayer film is deposited, the superconducting wire is repeatedly exposed at a temperature of 500 to 1000°C, and there is a problem that a peeling phenomenon may occur between the metal substrate and the buffer layer due to the stress accumulated in this process.

Summary of the Invention

Problems to be Solved by the Invention

[0006] This disclosure was derived to solve the above-mentioned problems and aims to provide a manufacturing apparatus for superconducting wires that can perform a predetermined pretreatment step before the buffer layer is deposited on the substrate to reinforce the adhesion between the substrate and the buffer layer. [Means for solving the problem]

[0007] An apparatus for manufacturing a superconducting wire according to an example of the present disclosure is an apparatus for manufacturing a superconducting wire, comprising: an unwinding machine for unwinding a substrate; a plurality of deposition modules for sequentially depositing a buffer layer and a superconducting layer onto a substrate unwinded and transferred from the unwinding machine; and a winding machine for winding up a substrate that has passed through the deposition modules and on which the buffer layer and superconducting layer have been deposited, further comprising a pre-processing module positioned in front of the plurality of deposition modules and performing a predetermined pre-processing step on the substrate before the buffer layer is deposited on the substrate, wherein the pre-processing module can be configured to perform a pre-processing step to reinforce the adhesion between the substrate and the buffer layer.

[0008] The pre-processing module can form an adhesive layer on the substrate.

[0009] The pretreatment module includes a deposition apparatus, which deposits an adhesive layer onto the substrate, and the deposition apparatus may be a sputtering deposition apparatus or an electron beam deposition apparatus.

[0010] The pre-treatment module can be configured to perform plasma surface treatment on the substrate.

[0011] The pretreatment module includes a plasma generator that generates plasma, and is configured to perform plasma surface treatment on the substrate using the plasma generated by the plasma generator, and the reaction gas used in the plasma generator may include at least one of Ar and O2.

[0012] If, among the numerous buffer layer deposition modules, the deposition module that deposits the uppermost buffer layer, which is located at the top of the buffer layers, is designated as the uppermost buffer layer deposition module, then the uppermost buffer layer deposition module can be configured to perform plasma surface treatment on the uppermost buffer layer along with the deposition of the uppermost buffer layer.

[0013] The deposition module for the uppermost buffer layer may include a plasma generator that generates O2 plasma, and the uppermost buffer layer may be configured to undergo plasma surface treatment using the O2 plasma generated by the plasma generator.

[0014] The pre-processing module includes a multi-turn transfer device for multi-turning the substrate, and the plasma generator can be positioned on at least one of the two sides and the top of the multi-turn transfer device.

[0015] The uppermost buffer layer may be a lanthanum manganite layer.

[0016] Each of the numerous deposition modules includes a multi-turn transfer device for multi-turning the substrate, and the multi-turn transfer devices of each of the numerous deposition modules can have the same size and structure as one another.

[0017] The aforementioned number of deposition modules can be arranged in a single row in the left-right direction, and one of the multi-turn transfer devices of any two adjacent deposition modules can be positioned to protrude forward compared to the other, so that the substrate is transmitted in a straight line between the two adjacent deposition modules.

[0018] Guide rollers for transporting the substrate are arranged on both the left and right sides of each of the numerous deposition modules, and the substrate can be transmitted between two adjacent deposition modules by the guide rollers.

[0019] Each of the plurality of deposition modules includes a deposition apparatus for depositing a buffer layer or a superconducting layer on the substrate, and a fixing plate on which the deposition apparatus is placed and fixed, and the fixing plate can be configured to be movable in the vertical direction.

[0020] A superconducting wire according to an example of the present disclosure is a superconducting wire manufactured by the above-described superconducting wire manufacturing apparatus, and may include a substrate, an adhesive layer formed on the substrate, a buffer layer formed on the adhesive layer, and a superconducting layer formed on the buffer layer.

[0021] The adhesive layer is a Ni layer, a Cr layer, a Ti layer, or a NiCr layer, and the thickness of the adhesive layer may be 5 to 50 nm.

Advantages of the Invention

[0022] In one aspect of the present disclosure, before the buffer layer is deposited on the substrate, a predetermined pretreatment process can be performed to reinforce the adhesion between the substrate and the buffer layer.

[0023] Also, in another aspect of the present disclosure, by arranging a plurality of deposition modules having the same structure in parallel to form the apparatus, the manufacturing cost can be reduced and the design of the equipment can be simplified.

[0024] Also, in another aspect of the present disclosure, before depositing the superconducting layer, by performing plasma surface treatment on the uppermost buffer layer below it, the crystallinity of the wire can be improved, the surface roughness can be improved, and the characteristics of the superconducting wire can be improved.

Brief Description of the Drawings

[0025] [Figure 1] It is a diagram corresponding to a general example illustration of a superconducting wire. [Figure 2] It is a perspective view of a superconducting wire manufacturing apparatus according to an embodiment of the present disclosure. [Figure 3] It is a front view of FIG. 2 seen from the front. [Figure 4]Figure 2 is a plan view seen from above. [Figure 5] Figure 2 is a side view taken from the side. [Figure 6] This is a cross-sectional view in the height direction of Figure 2. [Figure 7] A schematic diagram of a superconducting wire manufacturing apparatus according to one embodiment of the present disclosure. [Figure 8] This figure shows a superconducting wire manufactured by a manufacturing apparatus according to one embodiment of the present disclosure. [Figure 9] This figure shows a multi-turn transfer device according to one embodiment of the present disclosure. [Figure 10] This is a schematic diagram showing two adjacent deposition modules viewed from the front according to one embodiment of the present disclosure. [Figure 11] This is a schematic diagram showing two adjacent deposition modules viewed from above, according to one embodiment of the present disclosure. [Figure 12] This figure shows an example of the crystal structure of lanthanum manganite. [Figure 13] This figure schematically shows a deposition module for the uppermost buffer layer according to one embodiment of the present disclosure. [Modes for carrying out the invention]

[0026] The present disclosure will be described below with reference to the attached drawings.

[0027] The terminology used in this disclosure is chosen to be as widely used and general as possible, taking into account the function of this disclosure, although this may change depending on the intent of engineers in the relevant field, case law, the emergence of new technologies, etc. Unless otherwise defined, the technical and scientific terms used may have the meaning that is ordinarily understood by a person of ordinary skill in the art to which this disclosure belongs.

[0028] In this disclosure and claims, terms such as “includes” or “having” mean that the features or components described in the specification are present, and unless otherwise specified, do not exclude the possibility that one or more other features or components may be added.

[0029] As used in this disclosure and claims, singular expressions include plural expressions unless the context clearly identifies them as singular. Furthermore, plural expressions include singular expressions unless the context clearly identifies them as plural.

[0030] Hereinafter, the reference numerals in the drawings correspond to the following: 10: superconducting wire manufacturing apparatus, 11: unwinding machine, 12: winding machine, PM: pre-treatment module, PM_d: deposition apparatus, PM_p: plasma generator, DM: deposition module, DM_b: buffer layer deposition module, DM_s: superconducting layer deposition module, 100: multi-turn transfer apparatus, 200: deposition apparatus, 300: fixed plate, 400: plasma generator, 20: superconducting wire, and 21: substrate. Figure 2 is a perspective view of a superconducting wire manufacturing apparatus according to one embodiment of the present disclosure, Figure 3 is a front view of Figure 2 seen from the front, Figure 4 is a top view of Figure 2 seen from above, Figure 5 is a side view of Figure 2 seen from the side, and Figure 6 is a cross-sectional view of Figure 2 in the height direction. In the direction indications of the drawings, F, B, L, R, U, and D mean front, back, left, right, up, and down, respectively.

[0031] A superconducting wire manufacturing apparatus according to one embodiment of the present disclosure includes an unwinding machine for unwinding a substrate, a plurality of deposition modules for sequentially depositing a buffer layer and a superconducting layer onto the substrate unwinding and being transported from the unwinding machine, and a winding machine for winding up the substrate that has passed through the deposition modules and on which the buffer layer and superconducting layer have been deposited. The apparatus further includes a pre-treatment module positioned in front of the plurality of deposition modules for performing a predetermined pre-treatment process on the substrate before the buffer layer is deposited on the substrate. The pre-treatment module is configured to perform a pre-treatment process to reinforce the adhesion between the substrate and the buffer.

[0032] Referring to Figure 2, the superconducting wire manufacturing apparatus 10 is an apparatus for manufacturing superconducting wires and broadly includes an unwinding machine 11 for unwinding the substrate, a number of vapor deposition modules DM, and a winding machine 12 for winding the substrate on which the buffer layer and superconducting layer are formed, that is, for winding the superconducting wire.

[0033] The unwinding machine 11 may be a roller that unwinds a substrate provided in roll form, and the winding machine 12 may be a roller that winds a substrate, i.e., a superconducting wire, that has passed through a number of vapor deposition modules DM and has been vapor-deposited, into roll form.

[0034] The numerous deposition modules DM sequentially deposit buffer layers and superconducting layers onto substrates that are unwound and transported from the unwinding machine 11. The numerous deposition modules DM are arranged in a continuous sequence, sequentially depositing different types of buffer layers onto the substrates, and then depositing a superconducting layer on the uppermost buffer layer of the substrate.

[0035] The number and arrangement order of the deposition modules DM can be adjusted to correspond to the type and order of the buffer layer and superconducting layer. For example, if we consider the case where buffer layers and superconducting layers are deposited on a structure as shown in Figure 1, the following layers are sequentially stacked on the substrate: an Al2O3 diffusion prevention layer which is the first buffer layer, a Y2O3 seed layer which is the second buffer layer, a MgO IBAD layer which is the third buffer layer, a MgO Homo Epi layer which is the fourth buffer layer, and a LaMnO3 strain matching layer which is the fifth buffer layer. A ReBaCuO superconducting layer is formed on the strain matching layer which is the fifth buffer layer. For this reason, the apparatus 10 according to this disclosure can be configured to include five buffer layer deposition modules DM_1, DM_2, ... and DM_5 and one superconducting layer deposition module DM_n.

[0036] Figure 7 is a schematic diagram of a superconducting wire manufacturing apparatus according to one embodiment of the present disclosure. Referring to this, five buffer layer deposition modules among the numerous deposition modules DM can be represented as DM_1, DM_2, ..., and DM_5, and DM_b can be represented as DM_n and DM_s, respectively.

[0037] On the other hand, although not shown separately, a number of deposition modules DM may further include deposition modules for a protective layer to form a protective layer on one side and the other side of the superconducting wire, i.e., on the substrate and the surface of the superconducting layer.

[0038] The apparatus according to this disclosure further includes a pretreatment module PM that is positioned in front of a number of deposition modules DM. As illustrated in Figures 2 and 7, the pretreatment module PM is positioned in front of the deposition modules DM and performs predetermined pretreatment steps on the substrate before a buffer layer is deposited on the substrate, specifically before a first buffer layer is deposited.

[0039] The aforementioned pretreatment step is a step to reinforce the adhesion between the substrate and the buffer layer, particularly the adhesion between the first buffer layers. The apparatus according to this disclosure is configured to perform this pretreatment step using a pretreatment module PM, thereby reinforcing the adhesion between the metal substrate and the buffer layer and eliminating the peeling phenomenon between the substrate and the buffer layer caused by heating as described above.

[0040] More specifically, the pre-treatment module can form an adhesive layer on the substrate, that is, between the substrate and the first buffer layer. Alternatively, the pre-treatment module can perform plasma surface treatment on the substrate.

[0041] First, as one embodiment, we will describe a case in which the pre-processing module forms an adhesive layer between the substrate and the first buffer layer.

[0042] Referring to Figure 7, the pretreatment module PM may include a deposition apparatus PM_d, which can deposit an adhesive layer onto the substrate. The deposition apparatus PM_d can consist of a sputtering deposition apparatus or an electron beam deposition apparatus, and may also include a thermal deposition apparatus or a pulsed laser deposition apparatus.

[0043] A sputtering deposition apparatus may be a device that accelerates plasma with ionized gas at a low vacuum and causes it to collide with a target, ejecting atoms to produce a thin film on a substrate. An electron beam deposition apparatus may be a device that, after placing a substrate on which a thin film of metal or ceramic material will be deposited inside a vacuum chamber that maintains a high vacuum, evaporates the target material from a source formed of the material to be deposited on the substrate, and deposits it onto the substrate.

[0044] Furthermore, in yet another aspect of the present disclosure, a superconducting wire manufactured by the apparatus for which a preprocessing module forms an adhesive layer on a substrate includes a substrate, an adhesive layer formed on the substrate, a buffer layer formed on the adhesive layer, and a superconducting layer formed on the buffer layer.

[0045] Here, the adhesive layer is composed of a Ni layer, a Cr layer, a Ti layer, or a NiCr layer, and simultaneously or individually, the thickness of the adhesive layer can be between 5 nm and 50 nm.

[0046] As an example, Figure 8 is a diagram showing the configuration of a superconducting wire manufactured from an apparatus in which the pre-processing module forms an adhesive layer. As shown in the diagram, the superconducting wire of the present invention can further form an adhesive layer between the substrate and the Al2O3 diffusion-blocking layer, which is the first buffer layer.

[0047] Hereinafter, we will describe another embodiment in which the pre-treatment module is configured to perform plasma surface treatment on the substrate.

[0048] Referring again to Figure 7, the pretreatment module PM may include a plasma generator PM_p that generates plasma, and the plasma generated by the plasma generator PM_p can be used to perform plasma surface treatment on the substrate.

[0049] A plasma generator can be defined as a device that uses an electromagnetic field to dissociate a reaction gas and generate a plasma containing free electrons, positive ions, neutral atoms, neutral molecules, etc.

[0050] Here, the reaction gas used in the plasma generator PM_p may include at least one of Ar and O2. When Ar is included as the reaction gas, impurities on the wire surface are removed (cleaning) by Ar bombardment, improving the surface roughness of the substrate and increasing the bonding area, thereby improving the adhesion between the substrate and the first buffer layer. When O2 is included as the reaction gas, organic matter on the substrate surface is removed (ashing) by the oxygen reaction (O2 reaction), and as the wettability of the substrate is improved by surface oxidation, the adhesion between the substrate and the first buffer layer can be improved. Based on these principles, the present invention can use Ar, O2, or a mixture of Ar and O2 simultaneously as the reaction gas.

[0051] The general structure of the superconducting wire manufacturing apparatus 10 according to this disclosure will be described below as one embodiment.

[0052] Referring again to Figures 2 to 7, multiple deposition modules DM can be arranged in a continuous sequence.

[0053] Each of the numerous deposition modules DM for depositing buffer layers and superconducting layers may include a transfer device 100 for multi-turning substrates or wires (substrates on which at least one buffer layer is formed, hereinafter referred to as substrates).

[0054] Figure 9 shows a multi-turn transfer device according to one embodiment of the present disclosure. The multi-turn transfer device 100 of the present invention includes a first reel section 110 and a second reel section 120 that are spaced apart in the left-right direction. The first reel section 110 and the second reel section 120 each include upper rolls 111 and 121 and lower rolls 112 and 122, respectively. The upper rolls 111 and 121 and the lower rolls 112 and 122 of the first reel section 110 and the second reel section 120 are each configured with a number of rollers 130 installed. The device can be described as a multi-turn reel-to-reel device configured so that the substrate can be turned multiple times between the first reel section 110 and the second reel section 120.

[0055] In one embodiment, the apparatus 10 can be configured such that each of the multiple deposition module DMs has a multi-turn transfer device 100 of the same size and structure. By configuring each deposition module DM's multi-turn transfer device 100 similarly, the overall manufacturing cost of the apparatus can be reduced and the equipment design can be simplified.

[0056] Figure 10 is a schematic diagram of two adjacent deposition modules viewed from the front, and Figure 11 is a schematic diagram of two adjacent deposition modules viewed from above. The two adjacent deposition modules DM_m and DM_m+1 can be arranged so as to be separated from each other, or, although not shown, so as to be in close contact with each other, and the substrate and wires can be configured so as not to be exposed to the outside between the connecting parts of the two deposition modules DM_m and DM_m+1.

[0057] In one embodiment, a number of deposition modules, each including the multi-turn transfer device, are arranged in a single row in the left-right direction, and one of the multi-turn transfer devices of two adjacent deposition modules is positioned to protrude forward compared to the other, so that the substrate or wire is transmitted in a straight line between the two adjacent deposition modules.

[0058] First, referring to Figure 11, one of the multi-turn transfer devices 100 of two adjacent deposition modules DM_m and DM_m+1 can be positioned to protrude forward compared to the other. This is to correctly align the transfer direction of the substrate exiting the multi-turn transfer device 100 of one deposition module DM with the transfer direction of the substrate entering the multi-turn transfer device 100 of the adjacent deposition module DM. By positioning the two adjacent deposition modules DM_m and DM_m+1 in this way, offset in the front-to-back direction, the substrate can be transmitted linearly between the two adjacent deposition modules DM_m and DM_m+1. This prevents the substrate from being distorted or bent and damaged during the transfer process.

[0059] On the other hand, Figure 11 highlights the arrangement structure of two adjacent deposition modules DM_m and DM_m+1, and a more factual example can be seen in Figure 6, which corresponds to the cross-sectional view in the height direction of Figure 2. Furthermore, if the numerous deposition modules DM are designated as the first, second, and third deposition modules in order, the deposition modules can be arranged so that they recede or protrude in parallel, with the first deposition module protruding forward from the second deposition module and the second deposition module protruding forward from the third deposition module, or the numerous deposition modules can be arranged in a zigzag pattern, with the first deposition module protruding forward from the second deposition module and the third deposition module protruding forward from the second deposition module. Combining these two arrangement relationships, some of the numerous modules may be arranged so that they recede or protrude in parallel, while the rest are arranged in a zigzag pattern.

[0060] Furthermore, in one embodiment, the plurality of deposition modules including the multi-turn transfer device may be configured such that guide rollers for transporting the substrate are arranged on both the left and right sides of each deposition module, and the substrate is transmitted between two adjacent deposition modules by the guide rollers.

[0061] As illustrated in Figures 10 and 11, guide rollers 500 are positioned on both sides in the left-right direction of each deposition module DM, that is, on one side and the other side in the left-right direction of the multi-turn transfer device 100 for the deposition module DM. The guide rollers 500 allow the substrate to be transferred between two adjacent deposition modules DM_m and DM_m+1. Here, the guide rollers 500 can be configured to adjust the transfer direction and angle of the substrate, thereby helping to transfer the substrate in a straight line.

[0062] Referring to Figure 10, the deposition module DM of the manufacturing apparatus according to this disclosure may include a deposition apparatus 200 for depositing a buffer layer or a superconducting layer on a substrate. The deposition apparatus 200 can be positioned below a substrate that is being transferred in multiple turns by a multi-turn transfer apparatus. The deposition apparatus 200 can be composed of a sputtering deposition apparatus or an electron beam deposition apparatus, as in the deposition apparatus PM_d of the pre-treatment module described above, and this can be appropriately selected according to the type of buffer layer or superconducting layer.

[0063] In one embodiment, each deposition module DM includes a fixing plate 300 on which the deposition apparatus 200 of the deposition module DM is mounted and fixed, the fixing plate 300 may be configured to be movable in the vertical direction. The fixing plate 300 can be moved manually or automatically, and for this purpose, devices such as actuators may be further provided.

[0064] In this way, by configuring the fixing plate 300 to move vertically, the distance between the substrate and the deposition apparatus 200 can be adjusted to control the amount of deposition. Furthermore, when it is necessary to perform a specific operation on the deposition apparatus 200, such as replacing the deposition apparatus 200 or cleaning the deposition plate, the deposition apparatus 200 can be moved downwards using the fixing plate 300, allowing work to be done in a larger space, thereby improving accessibility and ease of operation.

[0065] On the other hand, referring again to the superconducting wire corresponding to the example shown in Figure 1, a fifth buffer layer, a lanthanum manganite (LMO) strain matching layer, can be formed at the top of the buffer layer. Figure 12 shows the crystal structure of lanthanum manganite, and a superconducting layer can be formed on such a lanthanum manganite strain matching layer, where the superconducting layer can be deposited by sputtering. However, sputtering involves ar + This method involves using ions to collide molecules and eject them, thereby depositing a thin film onto a substrate or wire. In this process, the oxygen (O) within the molecules is ejected by the strong energy. - ) separated LaMnO x Thin films can be formed in this form. To complement this, oxygen (O2) gas is added along with Ar gas, and the ejected LMO x The bonding with oxygen can induce the formation of a thin film with normal LMO molecules. Nevertheless, the LMO thin film formed on the wire may have a partial oxygen deficiency, resulting in the presence of oxygen vacancies. Ultimately, it is possible to form an LMO thin film with locally different composition ratios, causing changes over time in the formed lanthanum manganite buffer layer, reducing the crystallinity of the superconducting layer, and potentially leading to a decrease in the performance of the manufactured superconducting wire.

[0066] On the other hand, the apparatus 10 disclosed herein proposes the following configuration in order to solve these problems.

[0067] In one embodiment, the apparatus 10 can be configured such that the uppermost buffer layer deposition module, which deposits the uppermost buffer layer, also performs plasma surface treatment on the uppermost buffer layer at the same time as the deposition of the uppermost buffer layer. Furthermore, the uppermost buffer layer deposition module can include a plasma generator that generates O2 plasma, and the uppermost buffer layer can be configured to be subjected to plasma surface treatment by the O2 plasma generated by the plasma generator.

[0068] Thus, the manufacturing apparatus according to this disclosure allows the deposition of an LMO layer with an ideal composition ratio to be facilitated by the deposition of the uppermost buffer layer module DM_b_top, which in turn injects activated oxygen ions using remote plasma along with the deposition of the uppermost buffer layer. This suppresses the aging of the uppermost buffer layer, particularly the lanthanum manganite buffer layer, and minimizes the deterioration of the superconducting wire's properties.

[0069] The topmost buffer layer mentioned above refers to a buffer layer positioned at the top of a number of buffer layers, with a superconducting layer formed on top of it. As stated above, the topmost buffer layer may be a lanthanum manganite layer.

[0070] Referring to Figure 13, which schematically shows the uppermost buffer layer deposition module described above, as shown in the figure, the uppermost buffer layer deposition module DM_b_top includes a deposition apparatus 200 for depositing the uppermost buffer layer and a plasma generator 400 for generating plasma. The deposition apparatus 200 deposits the uppermost buffer layer, and the plasma generated by the plasma generator 400 provides a plasma surface treatment to the uppermost buffer layer.

[0071] Here, O2 can be used as the reaction gas in the plasma generator 400. That is, the uppermost buffer layer deposition module DM_b_top can be configured so that the surface of the wire on which lanthanum manganite has been deposited in a vacuum state is exposed to the O2 plasma by the O2 plasma generator 400.

[0072] As a result, LaMnO deposited on the surface of the wire x The reaction with oxygen transforms the structure into a stable crystalline structure of LaMnO3, thereby improving the crystallinity of the LMO and reducing its surface roughness. Ultimately, the crystallinity of the superconducting thin film formed on the LMO layer, which is the top buffer layer, is improved, enhancing the properties of the superconducting wire.

[0073] In one embodiment, the plasma source of the plasma generator 400 can be an ion source or a remote plasma source (RPS). The plasma generator 400 can be composed of one or more units, and as shown in Figure 13, the plasma generator 400 can be placed on both sides and on top of the multi-turn transfer device 100 described above, that is, at least one of the areas A1, A2, and A3 in the drawing.

[0074] As described above, according to this disclosure, a predetermined pretreatment process can be performed before the buffer layer is deposited on the substrate to reinforce the adhesion between the substrate and the buffer layer. By configuring the apparatus by arranging a number of deposition modules having the same structure in parallel, manufacturing costs can be reduced and the design of the equipment can be simplified. Furthermore, by applying plasma surface treatment to the uppermost buffer layer below the superconducting layer before depositing the superconducting layer, the crystallinity of the wire can be improved, the surface roughness can be reduced, and the properties of the superconducting wire can be improved.

[0075] While embodiments of the present invention have been described above with reference to the attached drawings, those with ordinary skill in the art to which the present invention pertains will understand that the present invention may be carried out in other specific forms without altering its technical idea or essential features. Therefore, the embodiments described above should be understood to be illustrative and not limiting in all respects.

Claims

1. Apparatus for manufacturing superconducting wires, A winding machine that unwinds the circuit board, A number of deposition modules for sequentially depositing a buffer layer and a superconducting layer onto a substrate unwound and transported from the aforementioned unwinding machine, The system includes a winding machine that winds up a substrate on which a buffer layer and a superconducting layer have been deposited, after passing through the deposition module. The system further includes a pre-processing module that is positioned in front of the numerous deposition modules and performs a predetermined pre-processing step on the substrate before a buffer layer is deposited on the substrate, The pre-treatment module is configured to perform a pre-treatment process to reinforce the adhesion between the substrate and the buffer layer. The pre-processing module is configured to perform plasma surface treatment on the substrate, and is part of a superconducting wire manufacturing apparatus.

2. The superconducting wire manufacturing apparatus according to claim 1, wherein the pretreatment module includes a plasma generator for generating plasma, and is configured to perform plasma surface treatment on the substrate with the plasma generated by the plasma generator, and the reaction gas used in the plasma generator includes at least one of Ar and O2.

3. If, among the numerous buffer layer deposition modules, the deposition module that deposits the uppermost buffer layer, which is located at the top of the buffer layers, is defined as the uppermost buffer layer deposition module, The superconducting wire manufacturing apparatus according to claim 1, wherein the deposition module for the uppermost buffer layer is configured to perform plasma surface treatment on the uppermost buffer layer along with the deposition of the uppermost buffer layer.

4. The superconducting wire manufacturing apparatus according to claim 3, wherein the deposition module for the uppermost buffer layer includes a plasma generator for generating O2 plasma, and the uppermost buffer layer is subjected to plasma surface treatment by the O2 plasma generated by the plasma generator.

5. The pre-processing module includes a multi-turn transfer device that turns the substrate multiple times. The superconducting wire manufacturing apparatus according to claim 4, wherein the plasma generator is arranged on at least one of the sides and top of the multi-turn transfer device.

6. The apparatus for manufacturing a superconducting wire according to claim 3, wherein the uppermost buffer layer is a lanthanum manganite layer.

7. Each of the aforementioned numerous deposition modules includes a multi-turn transfer device that performs multiple turns on the substrate, The superconducting wire manufacturing apparatus according to claim 1, wherein each of the numerous deposition modules has the same size and structure as the multi-turn transfer device.

8. The aforementioned numerous deposition modules are each arranged in a single row in the left-to-right direction. One of the multi-turn transfer devices in each of the two adjacent deposition modules is positioned to protrude forward compared to the other. The superconducting wire manufacturing apparatus according to claim 7, configured such that the substrate is transmitted in a straight line between the two adjacent deposition modules.

9. Guide rollers for transporting the substrate are arranged on both the left and right sides of each of the numerous deposition modules. The superconducting wire manufacturing apparatus according to claim 7, wherein the guide roller is configured to transmit the substrate between two adjacent deposition modules.

10. Each of the aforementioned deposition modules includes a deposition apparatus for depositing a buffer layer or a superconducting layer onto the substrate, and a fixing plate on which the deposition apparatus is mounted and fixed. The superconducting wire manufacturing apparatus according to claim 7, wherein the fixing plate is configured to be movable in the vertical direction.

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