Heating furnace, crucible, heating method, and method for producing SiC single crystals

The heating furnace and crucible design addresses surface roughness in SiC single crystals by controlling sublimation residues through temperature-controlled compartments, achieving smoother surfaces and reduced defects.

JP7877671B2Active Publication Date: 2026-06-23RESONAC CORP
View PDF 3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
RESONAC CORP
Filing Date
2021-12-09
Publication Date
2026-06-23

Smart Images

  • Figure 0007877671000001
    Figure 0007877671000001
  • Figure 0007877671000002
    Figure 0007877671000002
  • Figure 0007877671000003
    Figure 0007877671000003
Patent Text Reader

Abstract

To provide a heating furnace capable of preventing the surface roughness of a SiC single crystal from occurring during heating.SOLUTION: A heating furnace 1 includes a housing 10 having a closed space in the inside and a partition 20 for partitioning the closed space. The partition 20 for partitioning the closed space into first and second spaces 11 and 12 has an opening 21 connecting the first and second spaces 11 and 12; the first space 11 can store a SiC single crystal 30; 50% or more of the inner surfaces of the first space 11 is metal or alloy allowing carbide; the second space 12 has a temperature lower than that of the first space 11 during the heating; and 50% or more of the inner surfaces of the second space 12 is graphite.SELECTED DRAWING: Figure 1
Need to check novelty before this filing date? Find Prior Art