Resist underlayer film forming composition containing a polymer having an alicyclic hydrocarbon group

Abstract

The present invention provides: a composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. This composition for forming a resist underlayer film contains a polymer and a solvent, said polymer comprising a unit structure (A) represented by formula (1) [in formula (1): R1 represents a hydrogen atom or an alkyl group having 1-6 carbon atoms; and L1 represents an optionally substituted aliphatic ring, an aryl group having 6-40 carbon atoms or a hetero ring] and a unit structure (B) that contains an aliphatic ring in a side chain and that is different from the unit structure (A).

Claims

1. The following formula (1): 【Chemistry 1】 (In formula (1), R １ L represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. １ A resist underlayer film forming composition comprising a polymer containing a unit structure (A) represented by (wherein may be substituted with substituents, representing a monocyclic or polycyclic aliphatic ring having 3 to 10 carbon atoms), and a unit structure (B) having an aliphatic ring in its side chain and different from unit structure (A), and a solvent.

2. The following formula (1): 【Chemistry 2】 A resist underlayer film forming composition comprising a polymer containing a unit structure (A) represented by formula (1), where R 1 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and L 1 represents a monocyclic or polycyclic aliphatic ring having 3 to 10 carbon atoms, which may be substituted with substituents, and a unit structure (B) different from unit structure (A) in its side chain, and a solvent.

3. The unit structure (B) is defined by the following formula (2): 【Transformation 3】 A resist underlayer forming composition according to claim 1, represented by formula (2) (wherein T1 represents a single bond, an amide bond, or an ester bond, and L2 represents an aliphatic ring which may be substituted with a substituent).

4. The resist underlayer film forming composition according to claim 3, wherein L2 is a monocyclic or polycyclic aliphatic ring having 3 to 10 carbon atoms, which may be substituted with substituents.

5. The resist underlayer forming composition according to any one of claims 1 to 4, wherein the polymer further comprises a unit structure (C) containing a reactive substituent.

6. A resist underlayer film forming composition according to any one of claims 1 to 5, further comprising an acid generator.

7. A resist underlayer film forming composition according to any one of claims 1 to 6, further comprising a crosslinking agent.

8. A resist underlayer film characterized by being a fired product of a coated film made from the resist underlayer film forming composition according to any one of claims 1 to 7.

9. A step of forming a resist underlayer film by applying a resist underlayer film forming composition according to any one of claims 1 to 7 onto a semiconductor substrate and baking it, A step of forming a resist film by coating the resist on the resist underlayer film and baking it. A step of exposing the resist underlayer film and the semiconductor substrate coated with the resist, The process of developing and patterning the resist film after exposure. A method for manufacturing patterned substrates, including [the specified method].

10. A step of forming a resist underlayer on a semiconductor substrate, comprising the resist underlayer forming composition according to any one of claims 1 to 7, A step of forming a resist film on the resist underlayer film, A process of forming a resist pattern by irradiating a resist film with light or an electron beam and then developing it, A step of forming a patterned resist underlayer film by etching the resist underlayer film through the formed resist pattern, A process of processing a semiconductor substrate with the patterned resist underlayer film, A method for manufacturing a semiconductor device, characterized by including the following:

Images