Silicon-containing resist underlayer film formation composition

A silicon-containing resist underlayer film formation composition using polysiloxane and sulfonic acid compounds allows for both dry and wet etching, addressing substrate damage issues and enabling high etching rates for advanced lithography.

JP7875472B2Active Publication Date: 2026-06-18NISSAN CHEM CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
NISSAN CHEM CORP
Filing Date
2022-04-27
Publication Date
2026-06-18

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Abstract

Provided is a composition for forming a silicon-containing resist underlayer film, the composition containing: a component [A] of a polysiloxane; a component [B] of at least one selected from a sulfonic acid compound and an acid having a pKa of -15.0 to 1.2; and a component [C] of a solvent.
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