Reflective mask blank and method for manufacturing the same

Abstract

The present invention pertains to a reflection type mask blank having: a substrate; a Mo / Si multilayer reflection layer on the substrate; an intermediate layer on the Mo / Si multilayer reflection layer; a barrier layer on the intermediate layer; a protection layer on the barrier layer; and an absorption layer on the protection layer.　

Claims

1. circuit board and A Mo / Si multilayer reflective layer is formed by alternately stacking molybdenum (Mo) layers and silicon (Si) layers on the substrate, The intermediate layer on the aforementioned Mo / Si multilayer reflective layer, The barrier layer on the aforementioned intermediate layer, The protective layer on the barrier layer, A reflective mask blank having an absorbent layer on the protective layer, The barrier layer contains Nb (niobium) or yttrium nitride (YN), The aforementioned intermediate layer contains at least Si (silicon) and N (nitrogen), A reflective mask blank wherein the protective layer contains at least one element selected from the group consisting of Ru and Rh.

2. The barrier layer contains Nb (niobium), The reflective mask blank according to claim 1, wherein the barrier layer further contains at least one element selected from the group consisting of N (nitrogen), O (oxygen), and B (boron).

3. The reflective mask blank according to claim 1, wherein the intermediate layer contains 75 to 99.5 at% Si and 0.5 to 25 at% N.

4. The reflective mask blank according to claim 1, wherein the thickness of the barrier layer is 0.5 to 2.5 nm.

5. The reflective mask blank according to claim 1, wherein the thickness of the intermediate layer is 0.1 to 2.4 nm.

6. The reflective mask blank according to claim 1, wherein the thickness of the protective layer is 1 to 10 nm.

7. A reflective mask blank according to any one of claims 1 to 6, further comprising an anti-reflective layer for inspection light used to inspect the mask pattern on the absorption layer.

8. A method for manufacturing a reflective mask blank according to any one of claims 1 to 6, comprising the steps of: forming a Mo / Si multilayer reflective layer on a substrate; forming an intermediate layer on the Mo / Si multilayer reflective layer; forming a barrier layer on the intermediate layer; forming a protective layer on the barrier layer; and forming an absorption layer on the protective layer.

9. The method for manufacturing a reflective mask blank according to claim 8, wherein the Mo / Si multilayer reflective layer, the barrier layer, and the protective layer are formed by a sputtering method, and the steps of forming the Mo / Si multilayer reflective layer, forming the intermediate layer, forming the barrier layer, and forming the protective layer are carried out continuously in the same deposition chamber.

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