Ceramic substrate and method for manufacturing the same, electrostatic chuck, substrate fixing device, package for semiconductor device
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- SHINKO ELECTRIC IND CO LTD
- Filing Date
- 2022-03-24
- Publication Date
- 2026-06-23
Smart Images

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Figure 0007878635000003
Abstract
Claims
1. Substrate and, The substrate has a conductive pattern embedded within it, The aforementioned substrate mainly consists of aluminum oxide with a purity of 99.5% or higher, has a relative density of 97% or higher relative to aluminum oxide, and does not contain reducing agents of calcination aids. The conductive pattern is a ceramic substrate whose main component is a solid solution in which copper is dissolved in tungsten, forming a body-centered cubic lattice structure.
2. The ceramic substrate according to claim 1, wherein the substrate has an average particle size of aluminum oxide of 1.0 μm or more and 3.0 μm or less.
3. A package for a semiconductor device having a ceramic substrate according to claim 1 or 2.
4. An electrostatic chuck in which the conductive pattern is an electrostatic electrode, in a ceramic substrate according to claim 1 or 2.
5. base plate and A substrate fixing device having an electrostatic chuck according to claim 4 mounted on one side of the base plate.
6. A method for manufacturing a ceramic substrate having a substrate and a conductive pattern embedded in the substrate, The process involves preparing a green sheet that is mainly composed of aluminum oxide and does not contain any firing aids, The process involves forming a conductive pattern on the upper surface of the green sheet using a conductive paste in which copper oxide is added to tungsten, The process includes a step of firing the green sheet and the conductive pattern to form the substrate and the conductive pattern, A method for manufacturing a ceramic substrate, wherein the green sheet after firing is mainly composed of aluminum oxide with a purity of 99.5% or higher, and has a relative density of 97% or higher relative to aluminum oxide.
7. The method for manufacturing a ceramic substrate according to claim 6, wherein the ratio of copper oxide to tungsten in the conductive paste is 0.1 wt% or more and 10 wt% or less.