Substrate processing apparatus, substrate processing method, and chamber cleaning method

Abstract

To provide a substrate processing device, a substrate processing method, and a chamber cleaning method with which it is possible to reduce substrate contamination attributable to a chemical atmosphere.SOLUTION: A substrate processing device 100 comprises a chamber 201, a blower mechanism 3, a substrate holding unit 4, a substrate rotation unit 5, a first mixed liquid discharge unit 6, and a first overheated steam blow-out unit 31. Substrate processing is carried out in the chamber 201. The blower mechanism 3 sends air into the chamber 201. The substrate holding unit 4 holds a substrate W in the chamber 201. The substrate rotation unit 5 rotates the substrate W that is held to the substrate holding unit 4. The first mixed liquid discharge unit 6 discharges, toward the substrate W being rotated by the substrate rotation unit 5, a first mixed liquid (SPM) in which sulfuric acid and hydrogen peroxide water are mixed. The first overheated steam blow-out unit 31 is located between the blower mechanism 3 and the substrate W being held to the substrate holding unit 4. The first overheated steam blow-out unit 31 blows out overheated steam to the inside of the chamber 201.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a substrate processing method, and a chamber cleaning method.

Background Art

[0002] A single-wafer substrate processing apparatus that discharges a chemical solution from a nozzle toward a substrate to process the substrate is known. When the chemical solution is discharged from the nozzle, a chemical solution atmosphere containing chemical solution components is generated near the substrate. Even when the chemical solution collides with a chuck pin or a cup, a chemical solution atmosphere is generated near the substrate. In particular, when SPM (sulfuric acid hydrogen peroxide mixture) at 100°C or higher is discharged from the nozzle, droplets and mist of SPM are ejected from the nozzle due to the evaporation of water contained in the SPM. In some cases, fumes (smoky gases) are generated from the substrate due to the reaction between SPM and the resist.

[0003] Most of the chemical solution atmosphere is sent into the cup by the downflow of clean air formed in the chamber or the suction force of the exhaust equipment. However, some of the chemical solution atmosphere may diffuse into the space outside the cup and adhere to the dried substrate. In some cases, some of the chemical solution atmosphere may also adhere to the members arranged above the substrate or the inner wall surface of the chamber. In this case, there is a risk of contaminating the substrate.

[0004] Patent Document 1 discloses a substrate processing apparatus that sprays water into a chamber to generate mist in the chamber and combines the water particles contained in the mist with the chemical solution particles contained in the chemical solution atmosphere. By combining the water particles and the chemical solution particles, it becomes difficult for the chemical solution particles to float, and as a result, the diffusion of the chemical solution atmosphere is suppressed.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

[0006] However, if mist is generated inside the chamber, the moisture contained in the mist may lower the temperature of the substrate, potentially reducing the efficiency of resist removal by SPM. Therefore, there is room for further improvement in techniques to reduce substrate contamination caused by the chemical atmosphere.

[0007] The present invention has been made in view of the above problems, and its purpose is to provide a substrate processing apparatus, a substrate processing method, and a chamber cleaning method that can reduce substrate contamination caused by a chemical atmosphere. [Means for solving the problem]

[0008] According to one aspect of the present invention, the substrate processing apparatus comprises a chamber, a blowing mechanism, a substrate holding section, a substrate rotating section, a first mixed liquid discharge section, and a first superheated steam blowing section. Substrate processing is performed in the chamber. The blowing mechanism blows air into the chamber. The substrate holding section holds the substrate in the chamber. The substrate rotating section rotates the substrate held in the substrate holding section. The first mixed liquid discharge section is located inside the chamber. The first mixed liquid discharge section discharges a first mixed liquid, which is a mixture of sulfuric acid and hydrogen peroxide, toward the substrate being rotated by the substrate rotating section. The first superheated steam blowing section is located between the blowing mechanism and the substrate held in the substrate holding section. The first superheated steam blowing section blows superheated steam into the chamber.

[0009] In one embodiment, the substrate processing apparatus further comprises a control unit. The control unit controls the discharge of the first mixed liquid from the first mixed liquid discharge unit and the blowing out of the superheated steam from the first superheated steam blowing unit. The control unit causes the superheated steam to be blown out from the first superheated steam blowing unit when the first mixed liquid is discharged.

[0010] In one embodiment, the substrate processing apparatus further comprises a liquid receiving section and a second superheated steam blowing section. The liquid receiving section receives the first mixed liquid discharged from the substrate which is rotated by the substrate rotating section. The second superheated steam blowing section is supported by the liquid receiving section. The second superheated steam blowing section blows the superheated steam toward the substrate which is held by the substrate holding section.

[0011] In one embodiment, the control unit further controls the discharge of superheated steam from the second superheated steam outlet and the rotation of the substrate by the substrate rotating unit. When the first mixed liquid is discharged, the control unit controls the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate. The control unit stops the discharge of the first mixed liquid and controls the rotation speed of the substrate to form a paddle state in which the liquid film is supported on the upper surface of the substrate. When the paddle state is formed, the control unit discharges the superheated steam from the first superheated steam outlet and the second superheated steam outlet.

[0012] In one embodiment, the second superheated steam blowout section includes an upper superheated steam blowout section and a lower superheated steam blowout section. The upper superheated steam blowout section blows the superheated steam toward the upper surface of the substrate held by the substrate holder section. The lower superheated steam blowout section blows the superheated steam toward the lower surface of the substrate held by the substrate holder section.

[0013] In one embodiment, the first mixed liquid discharge unit discharges the first mixed liquid and hydrogen peroxide solution exclusively. The control unit further controls the discharge of the hydrogen peroxide solution from the first mixed liquid discharge unit. The control unit stops the blowing out of the superheated steam when the hydrogen peroxide solution is being discharged.

[0014] In one embodiment, the first mixed liquid discharge unit discharges the first mixed liquid and hydrogen peroxide exclusively. The control unit further controls the discharge of hydrogen peroxide from the first mixed liquid discharge unit. When the first mixed liquid is discharged, the control unit causes the superheated steam to be blown out from the first superheated steam blowout unit at a first flow rate. When the hydrogen peroxide is discharged, the control unit causes the superheated steam to be blown out from the first superheated steam blowout unit at a second flow rate smaller than the first flow rate.

[0015] In one embodiment, the substrate processing apparatus further comprises a second mixed liquid discharge unit. The second mixed liquid discharge unit discharges a second mixed liquid, which is a mixture of ammonia water, hydrogen peroxide water, and pure water, toward the substrate being rotated by the substrate rotating unit. The control unit further controls the discharge of the second mixed liquid from the second mixed liquid discharge unit. The control unit blows out the superheated steam when the second mixed liquid is discharged.

[0016] In one embodiment, the substrate processing apparatus further comprises a rinse liquid discharge unit and a steam blowing unit. The rinse liquid discharge unit discharges rinse liquid toward the substrate which is rotated by the substrate rotating unit. The steam blowing unit is located between the blowing mechanism and the substrate held by the substrate holding unit. The steam blowing unit blows steam into the chamber. The control unit further controls the discharge of the rinse liquid from the rinse liquid discharge unit and the blowing of the steam from the steam blowing unit. The control unit blows out the steam when the rinse liquid is discharged.

[0017] In one embodiment, the control unit further controls the rotation of the substrate by the substrate rotating unit. After stopping the discharge of the rinsing liquid, the control unit performs a drying process. The drying process involves controlling the rotation speed of the substrate to remove the rinsing liquid from the upper surface of the substrate and dry the upper surface of the substrate. When the drying process is performed, the control unit stops the discharge of water vapor.

[0018] In one embodiment, the substrate processing apparatus further comprises a third superheated steam blowing section and a steam blowing section. The third superheated steam blowing section blows superheated steam toward the inner wall surface of the chamber. The steam blowing section is located between the blowing mechanism and the substrate holding section. The steam blowing section blows steam into the chamber. The control unit further controls the blowing of steam from the steam blowing section and the blowing of superheated steam from the third superheated steam blowing section. When cleaning the inside of the chamber, the control unit causes steam to be blown from the steam blowing section and superheated steam to be blown from the third superheated steam blowing section.

[0019] According to another aspect of the present invention, a substrate processing method includes a holding step of holding a substrate in a chamber with a substrate holding part, and a step of blowing superheated steam into the chamber from a first superheated steam blowing part located between the blowing mechanism and the substrate held by the substrate holding part, while air is being blown into the chamber by a blowing mechanism.

[0020] In one embodiment, the substrate processing method further includes a first mixed liquid discharge step in which the substrate held in the substrate holding section is rotated and a first mixed liquid, which is a mixture of sulfuric acid and hydrogen peroxide, is discharged toward the rotating substrate. Superheated steam is discharged from the first superheated steam blowing section when the first mixed liquid is discharged.

[0021] In one embodiment, the substrate processing method further includes a paddle step in which the discharge of the first mixture is stopped and the rotation speed of the substrate is controlled to form a paddle state in which a liquid film of the first mixture is supported on the upper surface of the substrate. When the paddle state is formed, superheated steam is blown out from the first superheated steam blower and superheated steam is blown out from the second superheated steam blower toward the substrate held by the substrate holding part. The second superheated steam blower is supported by a liquid receiving part that receives the first mixture discharged from the rotating substrate.

[0022] In one embodiment, the second superheated steam blowing unit includes an upper superheated steam blowing unit and a lower superheated steam blowing unit. The upper superheated steam blowing unit blows the superheated steam toward the upper surface of the substrate held by the substrate holding unit. The lower superheated steam blowing unit blows the superheated steam toward the lower surface of the substrate held by the substrate holding unit.

[0023] In one embodiment, the above-described substrate processing method further includes an extrusion step of discharging hydrogen peroxide water toward the rotating substrate to discharge the liquid film of the first mixed liquid from the upper surface of the substrate. When discharging the hydrogen peroxide water, the blowing of the superheated steam is stopped.

[0024] In one embodiment, the above-described substrate processing method further includes an extrusion step of discharging hydrogen peroxide water toward the rotating substrate to discharge the liquid film of the first mixed liquid from the upper surface of the substrate. When discharging the first mixed liquid, the superheated steam is blown out from the first superheated steam blowing unit at a first flow rate. When discharging the hydrogen peroxide water, the superheated steam is blown out from the first superheated steam blowing unit at a second flow rate smaller than the first flow rate.

[0025] In one embodiment, the above-described substrate processing method further includes a second mixed liquid discharging step of discharging a second mixed liquid in which ammonia water, hydrogen peroxide water, and pure water are mixed toward the rotating substrate while the substrate held by the substrate holding unit is rotating. When discharging the second mixed liquid, the superheated steam is blown out from the first superheated steam blowing unit.

[0026] In one embodiment, the above-described substrate processing method further includes a step of blowing steam into the chamber from a steam blowing unit located between the blower mechanism and the substrate held by the substrate holding unit while air is being blown into the chamber by the blower mechanism, and a step of discharging a rinse liquid toward the rotating substrate while the substrate held by the substrate holding unit is rotating. When discharging the rinse liquid, the steam is blown out from the steam blowing unit.

[0027] In one embodiment, the substrate processing method further includes a drying step of controlling the rotation speed of the substrate to remove the rinse liquid from the upper surface of the substrate and dry the upper surface of the substrate after stopping the discharge of the rinse liquid. During the drying step, the blowing of the water vapor is stopped.

[0028] According to still another aspect of the present invention, a chamber cleaning method includes a step of cleaning the inside of a chamber in which substrate processing is performed. When cleaning the inside of the chamber, superheated steam is blown toward the inner wall surface of the chamber, and steam is blown into the chamber from a steam blowing portion located between a blower mechanism that blows air into the chamber and a substrate holding portion that holds a substrate in the chamber.

Advantages of the Invention

[0029] According to the substrate processing apparatus, substrate processing method, and chamber cleaning method according to the present invention, contamination of the substrate caused by the chemical solution atmosphere can be reduced.

Brief Description of the Drawings

[0030] [Figure 1] It is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] It is a cross-sectional view schematically showing the configuration of a substrate processing unit included in the substrate processing apparatus according to an embodiment of the present invention. [Figure 3] It is another cross-sectional view schematically showing the configuration of a substrate processing unit included in the substrate processing apparatus according to an embodiment of the present invention. [Figure 4] It is another cross-sectional view schematically showing the configuration of a substrate processing unit included in the substrate processing apparatus according to an embodiment of the present invention. [Figure 5] It is a diagram showing the configuration of a substrate processing apparatus according to an embodiment of the present invention. [Figure 6] It is a diagram showing the configuration of a first chemical solution supply unit included in the substrate processing apparatus according to an embodiment of the present invention. [Figure 7]This flowchart shows a substrate processing method according to an embodiment of the present invention. [Figure 8] This flowchart shows substrate processing and steam processing included in the substrate processing method according to an embodiment of the present invention. [Figure 9] This diagram schematically shows the substrate processing area during preheating. [Figure 10] This diagram schematically shows the substrate processing stage during SPM (Surface Processing). [Figure 11] This diagram schematically shows the substrate processing stage during paddle processing. [Figure 12] This diagram schematically shows the substrate processing stage when treating a substrate with hydrogen peroxide. [Figure 13] This diagram schematically shows the substrate processing area during the rinsing process. [Figure 14] This diagram schematically shows the substrate processing unit when processing a substrate using SC1. [Figure 15] This diagram schematically shows the substrate processing steps during the drying process. [Figure 16] This diagram schematically shows the substrate processing unit used when cleaning the inside of the chamber. [Figure 17] This is a schematic cross-sectional view showing the configuration of a substrate processing unit included in a modified example of the substrate processing apparatus according to an embodiment of the present invention. [Modes for carrying out the invention]

[0031] Hereinafter, embodiments of the substrate processing apparatus, substrate processing method, and chamber cleaning method of the present invention will be described with reference to the drawings (Figures 1 to 17). However, the present invention is not limited to the following embodiments and can be implemented in various forms without departing from its essence. In addition, explanations may be omitted where necessary to avoid repetition. Furthermore, in the figures, the same or corresponding parts are denoted by the same reference numerals and their descriptions are not repeated.

[0032] In the substrate processing apparatus, substrate processing method, and chamber cleaning method according to the present invention, the "substrate" to be processed can be various types of substrates, including semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. The embodiments of the present invention will be described below primarily using a disc-shaped semiconductor wafer as an example, but the substrate processing apparatus, substrate processing method, and chamber cleaning method according to the present invention are similarly applicable to various types of substrates other than the semiconductor wafers mentioned above. Furthermore, the substrate shape is not limited to a disc shape; the substrate processing apparatus, substrate processing method, and chamber cleaning method according to the present invention are applicable to substrates of various shapes.

[0033] First, the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 1. Figure 1 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. More specifically, Figure 1 is a schematic plan view of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 processes the substrate W with a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus and processes the substrate W one sheet at a time.

[0034] As shown in Figure 1, the substrate processing apparatus 100 comprises a plurality of substrate processing units 2, a fluid cabinet 10A, a plurality of fluid boxes 10B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

[0035] Each load port LP accommodates multiple substrates W stacked together. In this embodiment, each of the untreated substrates W (substrates W before processing) has a mask (resist film) of unwanted resist attached to it.

[0036] The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the substrate processing unit 2. Alternatively, a temporary placement platform (path) for the substrate W may be provided between the indexer robot IR and the center robot CR, and the substrate W may be indirectly transferred between the indexer robot IR and the center robot CR via the placement platform.

[0037] Multiple substrate processing units 2 form multiple towers TW (four towers TW in Figure 1). The multiple towers TW are arranged to surround the central robot CR in a plan view. Each tower TW contains multiple substrate processing units 2 (three substrate processing units 2 in Figure 1) stacked vertically.

[0038] The fluid cabinet 10A contains fluid, which includes processing liquid. Each fluid box 10B corresponds to one of the multiple towers TW. The processing liquid in the fluid cabinet 10A is supplied to all the board processing units 2 included in the tower TW corresponding to one of the fluid boxes 10B via one of the fluid boxes 10B.

[0039] The treatment solution contains sulfuric acid (H2SO4), hydrogen peroxide (H2O2), ammonia water (NH4OH), and a rinsing solution. In this embodiment, the rinsing solution is pure water. Pure water is, for example, deionized water (DIW). The rinsing solution may also be, for example, carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm). If the rinsing solution is not pure water, the fluid in the fluid cabinet 10A further contains pure water.

[0040] Each of the substrate processing units 2 supplies the processing solution to the upper surface of the substrate W. Specifically, the substrate processing unit 2 supplies sulfuric acid hydrogen peroxide mixture (SPM), hydrogen peroxide solution, rinse solution, and SC1 to the substrate W in the order of SPM, hydrogen peroxide solution, rinse solution, SC1, and rinse solution. The sulfuric acid hydrogen peroxide mixture is a mixture of sulfuric acid and hydrogen peroxide solution. SC1 is a mixture of ammonia solution, hydrogen peroxide solution, and pure water.

[0041] When SPM is supplied to the upper surface of substrate W, the resist film (organic material) is peeled off from the upper surface of substrate W, and the resist film is removed from the upper surface of substrate W. When SC1 is supplied to the upper surface of substrate W, particles adhering to the upper surface of substrate W are removed. More specifically, the silicon on the main surface of substrate W is oxidized by the hydrogen peroxide contained in SC1, the silicon oxide is etched by ammonia, and various particles are removed by lift-off. Therefore, SC1 peels off and removes the residue of the resist film and insoluble particles.

[0042] The control device 101 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the indexer robot IR, the center robot CR, and the substrate processing unit 2. The control device 101 includes a control unit 102 and a storage unit 103.

[0043] The control unit 102 controls the operation of each part of the substrate processing apparatus 100 based on various information stored in the memory unit 103. The control unit 102 has, for example, a processor. The control unit 102 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as its processor. Alternatively, the control unit 102 may have a general-purpose arithmetic unit or a dedicated arithmetic unit.

[0044] The storage unit 103 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 103 stores data and computer programs. The data includes various recipe data. The recipe data includes, for example, process recipes. Process recipes are data that defines the procedure for substrate processing. Specifically, process recipes are included in substrate processing. re This defines the execution order of a series of processes, the content of each process, and the conditions (parameter settings) for each process.

[0045] The storage unit 103 has a main memory. The main memory is, for example, a semiconductor memory. The storage unit 103 may further have an auxiliary storage device. The auxiliary storage device is, for example, a semiconductor memory and a hard disk drive. and The other is also included. The memory unit 103 may include removable media.

[0046] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 3. Figure 2 is a schematic cross-sectional view showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. Figure 3 is another schematic cross-sectional view showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. More specifically, Figure 3 shows the interior of the substrate processing unit 2 as viewed from above.

[0047] As shown in Figure 2, the substrate processing unit 2 includes a blower mechanism 3, a chamber 201, a rectifier plate 204, a spin chuck 4, a spin motor unit 5, a first nozzle 6, a first nozzle moving mechanism 61, a second nozzle 7, a second nozzle moving mechanism 71, a third nozzle 8, a liquid receiving unit 9, a substrate heating unit 20, and an exhaust duct 206. The substrate processing apparatus 100 also includes a first chemical supply unit 62, a second chemical supply unit 72, and a rinse liquid supply unit 82.

[0048] The control device 101 (control unit 102) controls the blower mechanism 3, spin chuck 4, spin motor unit 5, first nozzle moving mechanism 61, second nozzle moving mechanism 71, liquid receiving unit 9, substrate heating unit 20, first chemical supply unit 62, second chemical supply unit 72, and rinse liquid supply unit 82.

[0049] The chamber 201 has a roughly box shape. More specifically, the chamber 201 has an upper wall 202, a side wall 203, and a lower wall 205. The chamber 201 houses a substrate W, a rectifier plate 204, a spin chuck 4, a spin motor unit 5, a first nozzle 6, a first nozzle moving mechanism 61, a second nozzle 7, a second nozzle moving mechanism 71, a third nozzle 8, a liquid receiving unit 9, part of the substrate heating unit 20, part of the exhaust duct 206, part of the first chemical supply unit 62, part of the second chemical supply unit 72, and part of the rinse liquid supply unit 82. The substrate W is brought into the chamber 201 and processed within the chamber 201. In other words, substrate processing is performed within the chamber 201.

[0050] The blower mechanism 3 is located outside the chamber 201. More specifically, the blower mechanism 3 is located above the chamber 201 (upper wall 202) and faces the outer surface of the upper wall 202. The blower mechanism 3 may also be installed on the outer surface of the upper wall 202. In detail, the chamber 201 has an air outlet 202a that penetrates the upper wall 202 vertically, and the blower mechanism 3 is located above the air outlet 202a. The air outlet 202a is formed, for example, in a position that overlaps the substrate W in a plan view.

[0051] The blower mechanism 3 blows air into the chamber 201. More specifically, the blower mechanism 3 draws in air from the cleanroom where the substrate processing device 100 is installed and blows it into the chamber 201 through the air outlet 202a. In detail, the blower mechanism 3 has blades, an electric motor, and a filter. The blades rotate to draw in air from the cleanroom and blow it towards the air outlet 202a. The electric motor rotates the blades. The filter filters the air blown by the rotating blades. As a result, air purified by the filter is blown into the chamber 201. The blower mechanism 3 is, for example, a fan-filter unit (FFU).

[0052] The rectifier plate 204 is positioned within the chamber 201. More specifically, the rectifier plate 204 is held in a horizontal position. Therefore, the rectifier plate 204 extends along the horizontal plane. For example, the rectifier plate 204 is supported by the side wall 203. The rectifier plate 204 divides the internal space of the chamber 201 into a lower space 2a and an upper space 2b. The upper space 2b is the space above the lower space 2a.

[0053] More specifically, the rectifier plate 204 is positioned at the top of the chamber 201 and faces the inner wall surface of the upper wall 202. Specifically, the rectifier plate 204 is positioned above the components used for substrate processing within the chamber 201. Therefore, substrate processing is performed in the lower space 2a. In other words, the lower space 2a is the processing space. The components used for substrate processing include a spin chuck 4, a spin motor unit 5, a first nozzle 6, a first nozzle moving mechanism 61, a second nozzle 7, a second nozzle moving mechanism 71, a third nozzle 8, a liquid receiving unit 9, and a substrate heating unit 20.

[0054] The rectifier plate 204 rectifies the air blown from the blower mechanism 3 into the chamber 201. More specifically, the rectifier plate 204 rectifies the air sent from the blower mechanism 3 to the upper space 2b, generating a downflow into the lower space 2a (processing space).

[0055] More specifically, the rectifier plate 204 has numerous through-holes 204a. Each through-hole 204a penetrates the rectifier plate 204 in the thickness direction of the rectifier plate 204. For example, each through-hole 204a extends vertically. The numerous through-holes 204a are formed throughout the entire area of ​​the rectifier plate 204. The air outlet 202a of the upper wall 202 connects the outside of the chamber 201 to the upper space 2b. The air blown from the blowing mechanism 3 diffuses within the upper space 2b and fills the upper space 2b. The air filling the upper space 2b passes through the numerous through-holes 204a and flows into the lower space 2a from the entire area of ​​the rectifier plate 204. As a result, a downward airflow (downflow) is generated in the lower space 2a from the entire area of ​​the rectifier plate 204.

[0056] The electric motor of the blower mechanism 3 is controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) may, for example, control the electric motor of the blower mechanism 3 to constantly generate a downflow in the lower space 2a (processing space).

[0057] The spin chuck 4 holds the substrate W in the lower space 2a of the chamber 201. The spin chuck 4 is an example of a substrate holding part. More specifically, the spin chuck 4 holds the substrate W in a horizontal position. As shown in Figure 2, the spin chuck 4 may have a spin base 41 and a plurality of chuck members 42.

[0058] The spin base 41 is substantially disc-shaped and supports a plurality of chuck members 42 in a horizontal position. The plurality of chuck members 42 are arranged on the periphery of the spin base 41. The plurality of chuck members 42 grip the periphery of the substrate W. The plurality of chuck members 42 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 42 is controlled by the control device 101 (control unit 102).

[0059] The spin motor unit 5 rotates the substrate W held in the spin chuck 4. The spin motor unit 5 is an example of a substrate rotation unit. More specifically, the spin motor unit 5 rotates the substrate W and the spin chuck 4 together around a first rotation axis AX1 that extends in the vertical direction. The control device 101 (control unit 102) controls the rotation of the substrate W by the spin motor unit 5.

[0060] More specifically, the first rotation axis AX1 passes through the center of the spin base 41. The multiple chuck members 42 are arranged such that the center of the substrate W coincides with the center of the spin base 41. Therefore, the substrate W rotates with its own center as the center of rotation.

[0061] As shown in Figure 2, the spin motor unit 5 may have a shaft 51 and a motor body 52. ​​The shaft 51 is coupled to the spin base 41. The motor body 52 rotates the shaft 51. As a result, the spin base 41 rotates. The operation of the motor body 52 is controlled by a control device 101 (control unit 102).

[0062] The first nozzle 6 is located in the lower space 2a of the chamber 201 and exclusively discharges SPM and hydrogen peroxide solution toward the substrate W which is rotated by the spin motor unit 5. The first nozzle 6 is an example of a first mixed liquid discharge unit. When SPM is discharged onto the upper surface of the rotating substrate W, a liquid film of SPM is formed on the upper surface of the substrate W. Similarly, when hydrogen peroxide solution is discharged onto the upper surface of the rotating substrate W, a liquid film of hydrogen peroxide solution is formed on the upper surface of the substrate W.

[0063] The discharge of SPM from the first nozzle 6 and the discharge of hydrogen peroxide from the first nozzle 6 are controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the discharge of SPM from the first nozzle 6 and the discharge of hydrogen peroxide from the first nozzle 6 by controlling the first chemical supply unit 62.

[0064] The first chemical supply unit 62 exclusively supplies SPM and hydrogen peroxide to the first nozzle 6. As shown in Figure 2, the first chemical supply unit 62 may include a first chemical supply pipe 621, a first component on / off valve 631, and a second component on / off valve 632. A portion of the first chemical supply pipe 621 is housed in the chamber 201. The first component on / off valve 631 and the second component on / off valve 632 are housed in the fluid box 10B described with reference to Figure 1.

[0065] The first chemical supply pipe 621 exclusively supplies SPM and hydrogen peroxide to the first nozzle 6. Specifically, the first chemical supply pipe 621 is a tubular component that circulates SPM and hydrogen peroxide to the first nozzle 6.

[0066] More specifically, the first chemical supply piping 621 includes a first piping 621a and a second piping 621b. One end of the first piping 621a is connected to the first nozzle 6. The second piping 621b is connected to the first piping 621a. Sulfuric acid flows into the first piping 621a. Hydrogen peroxide flows into the second piping 621b.

[0067] The first component on / off valve 631 is interposed in the first pipe 621a. Specifically, the first component on / off valve 631 is positioned upstream of the connection point CP between the first pipe 621a and the second pipe 621b. The second component on / off valve 632 is interposed in the second pipe 621b.

[0068] The first component on / off valve 631 and the second component on / off valve 632 are switchable between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operations of the first component on / off valve 631 and the second component on / off valve 632. The actuators for the first component on / off valve 631 and the second component on / off valve 632 are, for example, pneumatic actuators or electric actuators.

[0069] The control device 101 (control unit 102) opens the first component on / off valve 631 and the second component on / off valve 632 when supplying SPM to the substrate W. When the first component on / off valve 631 and the second component on / off valve 632 are opened, sulfuric acid flows through the first pipe 621a toward the first nozzle 6, and hydrogen peroxide flows through the second pipe 621b toward the connection point CP. As a result, sulfuric acid and hydrogen peroxide mix at the connection point CP, and SPM is generated. The SPM flows through the first pipe 621a toward the first nozzle 6, and the SPM is discharged from the first nozzle 6 toward the substrate W.

[0070] When supplying hydrogen peroxide to the substrate W, the control device 101 (control unit 102) closes the first component on / off valve 631 and opens the second component on / off valve 632. When the first component on / off valve 631 is closed and the second component on / off valve 632 is opened, the flow of sulfuric acid through the first pipe 621a stops, and hydrogen peroxide flows through the second pipe 621b toward the connection point CP. As a result, the hydrogen peroxide that flows into the first pipe 621a flows through the first pipe 621a toward the first nozzle 6, and hydrogen peroxide is discharged from the first nozzle 6 toward the substrate W.

[0071] When the control device 101 (control unit 102) stops the discharge of SPM and hydrogen peroxide solution from the first nozzle 6, it closes the first component on / off valve 631 and the second component on / off valve 632. When the first component on / off valve 631 and the second component on / off valve 632 are closed, the flow of sulfuric acid through the first pipe 621a stops, and the flow of hydrogen peroxide solution through the second pipe 621b stops.

[0072] The second nozzle 7 is located in the lower space 2a of the chamber 201 and discharges SC1 toward the substrate W which is rotated by the spin motor unit 5. The second nozzle 7 is an example of a second mixed liquid discharge unit. The discharge of SC1 from the second nozzle 7 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the discharge of SC1 from the second nozzle 7 by controlling the second chemical supply unit 72.

[0073] The second chemical supply unit 72 supplies SC1 to the second nozzle 7. As shown in Figure 2, the second chemical supply unit 72 may have a second chemical supply pipe 721 and a chemical on / off valve 731. A portion of the second chemical supply pipe 721 is housed in the chamber 201. The chemical on / off valve 731 is housed in the fluid box 10B, which was described with reference to Figure 1.

[0074] The second chemical supply pipe 721 supplies SC1 to the second nozzle 7. Specifically, the second chemical supply pipe 721 is a tubular component that allows SC1 to flow to the second nozzle 7.

[0075] The chemical solution shut-off valve 731 is interposed in the second chemical solution supply pipe 721. The chemical solution shut-off valve 731 is switchable between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the chemical solution shut-off valve 731. The chemical solution shut-off valve 731 is, for example, a pneumatic actuator or an electric actuator.

[0076] The control device 101 (control unit 102) opens the chemical solution on / off valve 731 when supplying SC1 to the substrate W. When the chemical solution on / off valve 731 is opened, SC1 flows through the second chemical solution supply pipe 721 toward the second nozzle 7. As a result, SC1 is discharged from the second nozzle 7 toward the substrate W.

[0077] The control device 101 (control unit 102) closes the chemical solution on / off valve 731 when it stops the discharge of SC1 from the second nozzle 7. When the chemical solution on / off valve 731 is closed, the flow of SC1 through the second chemical solution supply pipe 721 is stopped.

[0078] The third nozzle 8 is located in the lower space 2a of the chamber 201 and discharges rinsing liquid toward the substrate W which is rotated by the spin motor unit 5. The third nozzle 8 is an example of a rinsing liquid discharge unit. The discharge of rinsing liquid from the third nozzle 8 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the discharge of rinsing liquid from the third nozzle 8 by controlling the rinsing liquid supply unit 82.

[0079] The rinse fluid supply unit 82 supplies rinse fluid to the third nozzle 8. As shown in Figure 2, the rinse fluid supply unit 82 may have a rinse fluid supply pipe 821 and a rinse fluid on / off valve 831. A portion of the rinse fluid supply pipe 821 is housed in the chamber 201. The rinse fluid on / off valve 831 is housed in the fluid box 10B, which was described with reference to Figure 1.

[0080] The rinse liquid supply pipe 821 supplies rinse liquid to the third nozzle 8. Specifically, the rinse liquid supply pipe 821 is a tubular component that circulates the rinse liquid to the third nozzle 8.

[0081] The rinse fluid on / off valve 831 is interposed in the rinse fluid supply pipe 821. The rinse fluid on / off valve 831 is switchable between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the rinse fluid on / off valve 831. The rinse fluid on / off valve 831 is, for example, a pneumatic actuator or an electric actuator.

[0082] The control device 101 (control unit 102) opens the rinse liquid on / off valve 831 when supplying rinse liquid to the substrate W. When the rinse liquid on / off valve 831 is opened, the rinse liquid flows through the rinse liquid supply pipe 821 toward the third nozzle 8. As a result, the rinse liquid is discharged from the third nozzle 8 toward the substrate W.

[0083] The control device 101 (control unit 102) closes the rinse liquid on / off valve 831 when it stops the discharge of rinse liquid from the third nozzle 8. When the rinse liquid on / off valve 831 is closed, the flow of rinse liquid through the rinse liquid supply pipe 821 stops.

[0084] The first nozzle moving mechanism 61 moves the first nozzle 6 along a horizontal plane. The operation of the first nozzle moving mechanism 61 is controlled by the control device 101 (control unit 102). More specifically, the first nozzle moving mechanism 61 moves the first nozzle 6 between a first retraction area and a processing position. The first retraction area is the area outside the spin chuck 4. For example, the first retraction area may be the area outside the liquid receiving section 9. Figure 3 shows the first nozzle 6 moved to the first retraction area.

[0085] In this embodiment, the processing position of the first nozzle 6 is opposite the center of the substrate W. The first nozzle 6 exclusively discharges SPM and hydrogen peroxide from the processing position toward the substrate W. As shown in Figure 3, the first nozzle moving mechanism 61 moves the first nozzle 6 horizontally along an arc-shaped trajectory passing through the center of the substrate W.

[0086] Specifically, as shown in Figure 2, the first nozzle moving mechanism 61 may include a first nozzle arm 611, a first nozzle base 612, and a first nozzle moving part 613. The first nozzle base 612 extends vertically. The base end of the first nozzle arm 611 is connected to the first nozzle base 612. The first nozzle arm 611 extends horizontally from the first nozzle base 612.

[0087] The first nozzle arm 611 supports the first nozzle 6. The first nozzle 6 protrudes vertically downward from the first nozzle arm 611. The first nozzle 6 may be positioned at the tip of the first nozzle arm 611.

[0088] The first nozzle moving unit 613 rotates the first nozzle base 612 about a second rotation axis AX2 that extends vertically. As a result, the first nozzle 6 moves around the first nozzle base 612 along the circumferential direction centered on the second rotation axis AX2. The first nozzle moving unit 613 is controlled by a control device 101 (control unit 102). The first nozzle moving unit 613 may include, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

[0089] The second nozzle movement mechanism 71 moves the second nozzle 7 along a horizontal plane. The operation of the second nozzle movement mechanism 71 is controlled by the control device 101 (control unit 102). More specifically, the second nozzle movement mechanism 71 moves the second nozzle 7 between a position opposite the center of the substrate W and a second retraction region. The second retraction region is the area outside the spin chuck 4. For example, the second retraction region may be the area outside the liquid receiving section 9. Figure 3 shows the second nozzle 7 moved to the second retraction region.

[0090] In this embodiment, the second nozzle 7 discharges SC1 toward the substrate W while moving between a position facing the center of the substrate W and a position facing the peripheral edge of the substrate W. The second nozzle 7 is a so-called scan nozzle. As shown in Figure 3, the second nozzle moving mechanism 71 moves the second nozzle 7 horizontally along an arc-shaped trajectory passing through the center of the substrate W.

[0091] As shown in Figure 2, the second nozzle moving mechanism 71 may include a second nozzle arm 711, a second nozzle base 712, and a second nozzle moving section 713. The configuration of the second nozzle moving mechanism 71 is substantially the same as that of the first nozzle moving mechanism 61, so its explanation will be omitted.

[0092] The liquid receiving section 9 receives the processing liquid (SPM, hydrogen peroxide solution, rinse solution, and SC1) discharged from the substrate W, which is rotated by the spin motor section 5. As shown in Figure 2, the liquid receiving section 9 may also have a guard 91 and a guard lifting section 94.

[0093] The guard 91 is roughly cylindrical and surrounds the substrate W held in the spin chuck 4. The guard 91 catches the processing liquid discharged from the substrate W. More specifically, the guard 91 catches the processing liquid splashed from the rotating substrate W.

[0094] As shown in Figure 2, the guard 91 may include a cylindrical guide portion 92 and a cylindrical inclined portion 93. The inclined portion 93 extends diagonally upward toward the first rotation axis AX1. The guide portion 92 extends downward from the lower end of the inclined portion 93. The inclined portion 93 includes an annular upper end 9a. The upper end 9a has an inner diameter larger than that of the substrate W and the spin base 41. The upper end 9a of the inclined portion 93 corresponds to the upper end of the guard 91. Hereinafter, the upper end 9a of the inclined portion 93 may be referred to as the upper end 9a of the guard 91. As shown in Figure 3, the upper end 9a surrounds the substrate W and the spin base 41 in a plan view.

[0095] The guard lifting unit 94 raises and lowers the guard 91 between a first lower position, shown by a dashed line in Figure 2, and a first upper position, shown by a solid line in Figure 2. Here, the first lower position is the position where the upper end 9a of the guard 91 is positioned below the substrate W. The first upper position is the position where the upper end 9a of the guard 91 is positioned above the substrate W. The guard lifting unit 94 is controlled by a control device 101 (control unit 102). The guard lifting unit 94 may include, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

[0096] For example, the control device 101 (control unit 102) moves the guard 91 from the first lower position to the first upper position after the substrate W is held by the spin chuck 4. By positioning the guard 91 in the first upper position, it can catch any processing liquid splashing from the substrate W. Also, when the substrate W is being discharged from the chamber 201, the control device 101 (control unit 102) moves the guard 91 from the first upper position to the first lower position. By positioning the guard 91 in the first lower position, it becomes possible to transfer the substrate W between the center robot CR and the spin chuck 4, as explained with reference to Figure 1.

[0097] The exhaust duct 206 discharges the gas inside the chamber 201 to the outside of the chamber 201. Specifically, the gas inside the exhaust duct 206 is constantly drawn in by an exhaust system (not shown) installed in the factory where the substrate processing apparatus 100 is installed. The upstream end of the exhaust duct 206 is located below the spin base 41. The gas inside the guard 91 is drawn towards the upstream end of the exhaust duct 206 by the suction force of the exhaust system transmitted through the exhaust duct 206. The gas floating in the space above the guard 91 is drawn in towards the inside of the upper end 9a of the guard 91 by the suction force transmitted from the exhaust duct 206 to the inside of the guard 91. As a result, the gas inside the chamber 201 is discharged to the outside of the chamber 201 through the inside of the guard 91. At that time, the gas inside the chamber 201 passes near the peripheral edge of the substrate W held by the spin chuck 4.

[0098] The substrate heating unit 20 heats the substrate W held in the spin chuck 4. For example, as shown in Figure 2, the substrate heating unit 20 may include a heating member 21, a lifting shaft 22, a power supply unit 23, and a heater lifting unit 24.

[0099] The heating element 21 is substantially disc-shaped and is located between the substrate W held by the chuck member 42 and the spin base 41. A heater is embedded in the heating element 21. The heater includes, for example, a resistor. The power supply unit 23 energizes the heater embedded in the heating element 21 to heat the heating element 21. The power supply unit 23 is controlled by the control device 101 (control unit 102).

[0100] The lifting shaft 22 is a substantially rod-shaped member and extends substantially vertically. The lifting shaft 22 is coupled to the heating member 21. The heater lifting unit 24 raises and lowers the heating member 21 by raising and lowering the lifting shaft 22. Specifically, the heater lifting unit 24 raises and lowers the heating member 21 between the lower surface of the substrate W held by the chuck member 42 and the upper surface of the spin base 41. The heater lifting unit 24 is controlled by a control device 101 (control unit 102). The heater lifting unit 24 may include, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

[0101] Next, with reference to Figure 3, the substrate processing apparatus 100 of this embodiment will be described. As shown in Figure 3, the chamber 201 further includes a shutter 207. In addition, an input / output port 203a is formed in the side wall 203 of the chamber 201. The shutter 207 is movable between a position that opens the input / output port 203a and a position that closes the input / output port 203a. The operation of the shutter 207 is controlled by a control device 101 (control unit 102).

[0102] The loading / unloading port 203a is an opening that connects the inside and outside of the chamber 201. The center robot CR, as described with reference to Figure 1, loads the substrate W into the lower space 2a of the chamber 201 via the loading / unloading port 203a when the shutter 207 is open. The center robot CR, as described with reference to Figure 1, also unloads the substrate W from the inside to the outside of the chamber 201 via the loading / unloading port 203a when the shutter 207 is open. For example, the control device 101 (control unit 102) closes the shutter 207 after the substrate W has been transferred from the center robot CR to the spin chuck 4 and the hand of the center robot CR has moved to the outside of the chamber 201.

[0103] Next, with reference to Figure 2, the substrate processing apparatus 100 of this embodiment will be further described. As shown in Figure 2, the substrate processing apparatus 2 further includes a first discharge section 31, a second discharge section 32, a third discharge section 33, and a fourth discharge section 34.

[0104] The first blowout section 31 is located between the blower mechanism 3 and the substrate W held by the spin chuck 4, and blows superheated steam into the lower space 2a of the chamber 201. The first blowout section 31 is an example of a first superheated steam blowout section. The blowing of superheated steam from the first blowout section 31 is controlled by the control device 101 (control unit 102). Superheated steam is generated by heating steam. Therefore, superheated steam is at a higher temperature than the steam temperature. Specifically, the temperature at which steam is generated is 100°C, and the temperature at which superheated steam is generated is higher than 100°C.

[0105] The superheated steam blown out from the first outlet 31 flows together with the air in the chamber 201 due to the downflow and the suction force from the exhaust duct 206. Therefore, the superheated steam is drawn towards the inside of the upper end 9a of the guard 91. At that time, the superheated steam passes near the peripheral edge of the substrate W held in the spin chuck 4. As a result, the peripheral edge of the substrate W is affected by the superheated steam. Department The temperature drop is suppressed.

[0106] In this embodiment, the first discharge section 31 is positioned above the first nozzle 6. For example, as shown in Figure 2, the first discharge section 31 may be supported by the rectifier plate 204. For example, the first discharge section 31 is fixed to the rectifier plate 204 via a bracket. Also, in a plan view, the first discharge section 31 is located outside the substrate W held by the spin chuck 4. Therefore, even if water droplets drip from the first discharge section 31, these droplets are unlikely to fall onto the substrate W. For example, the first discharge section 31 may be positioned to overlap with the liquid receiving section 9 in a plan view.

[0107] The first discharge section 31 blows out superheated steam, for example, when the substrate W is being processed by SPM. In other words, the control device 101 (control unit 102) causes superheated steam to be blown out from the first discharge section 31 when SPM is being discharged from the first nozzle 6. Hereinafter, substrate processing by SPM may be referred to as "SPM processing".

[0108] As already explained, SPM is discharged from the first nozzle 6 toward the center of the substrate W. Therefore, the peripheral part of the substrate W, which is far from the center of the substrate W, tends to have a lower temperature compared to the center of the substrate W. For this reason, it is not easy to remove the resist film attached to the peripheral part of the substrate W, and it is necessary to set the SPM processing time to a relatively long time. In contrast, according to this embodiment, the decrease in temperature at the peripheral part of the substrate W can be suppressed by superheated steam, so it becomes easy to remove the resist film attached to the peripheral part of the substrate W. Therefore, the SPM processing time can be set to a relatively short time, and the efficiency of resist removal by SPM can be improved. As a result, the amount of SPM used for substrate processing can be reduced.

[0109] Furthermore, during SPM processing, a chemical atmosphere is generated from the first nozzle 6, the substrate W, etc. In contrast, according to this embodiment, the diffusion of the chemical atmosphere can be suppressed by superheated steam. Therefore, contamination of the substrate W caused by the chemical atmosphere can be reduced. Specifically, due to the downflow, droplets contained in the superheated steam collide with chemical components floating in the lower space 2a of the chamber 201, giving the chemical components a downward acceleration. As a result, the chemical components are drawn to the inside of the upper end 9a of the guard 91 by the suction force transmitted from the exhaust duct 206 to the inside of the guard 91, and are discharged outside the chamber 201 through the inside of the guard 91 together with the gas inside the chamber 201.

[0110] In particular, in this embodiment, the first discharge section 31 is positioned above the first nozzle 6. Therefore, compared to a configuration in which the first discharge section 31 is positioned below the first nozzle 6, the diffusion of the chemical atmosphere generated from the first nozzle 6 can be efficiently suppressed.

[0111] Furthermore, according to this embodiment, the superheated steam can heat the components surrounding the substrate W, such as the liquid receiving section 9, the spin chuck 4, and the spin motor section 5, thereby raising the temperature of the components surrounding the substrate W. As a result, the temperature of the substrate W becomes less likely to drop. Therefore, the efficiency of resist stripping by SPM can be further improved.

[0112] Furthermore, according to this embodiment, the first discharge section 31 is positioned relatively far from the first nozzle 6. Therefore, the superheated steam is less likely to be attracted to the SPM discharged from the first nozzle 6. As a result, the superheated steam is less likely to be unevenly distributed within the lower space 2a, and the components located in the lower space 2a of the chamber 201 can be efficiently heated by the superheated steam.

[0113] Furthermore, superheated steam contains a small amount of moisture. Therefore, when the moisture in the superheated steam comes into contact with the SPM, the heat generated when the SPM and moisture react can suppress the temperature drop of the substrate W.

[0114] Furthermore, supplying superheated steam increases the humidity in the lower space 2a of the chamber 201. As a result, the SPM spreads more easily on the upper surface of the substrate W, enabling efficient processing of the substrate W.

[0115] The second blowout section 32 is supported by the liquid receiving section 9 and blows superheated steam toward the substrate W held by the spin chuck 4. The second blowout section 32 is an example of a second superheated steam blowout section. Specifically, the second blowout section 32 is supported by the guard 91. For example, the second blowout section 32 is fixed to the guard 91 via a bracket. The blowing of superheated steam from the second blowout section 32 is controlled by the control device 101 (control unit 102).

[0116] According to this embodiment, superheated steam can be supplied to the substrate W from a position relatively close to the substrate W. Therefore, the temperature of the substrate W is less likely to drop, and the efficiency of resist stripping by SPM can be further improved. In addition, the diffusion of the chemical atmosphere generated from the substrate W can be efficiently suppressed.

[0117] In this embodiment, as shown in Figure 2, the second discharge section 32 includes an upper discharge section 32a and a lower discharge section 32b. The upper discharge section 32a blows superheated steam toward the upper surface of the substrate W held by the spin chuck 4. The lower discharge section 32b blows superheated steam toward the lower surface of the substrate W held by the spin chuck 4. The upper discharge section 32a is an example of an upper superheated steam discharge section. The lower discharge section 32b is an example of a lower superheated steam discharge section.

[0118] Specifically, the upper outlet portion 32a is fixed to the top of the outer surface of the inclined portion 93. In other words, the upper outlet portion 32a is supported near the upper end 9a of the guard 91. The lower outlet portion 32b is fixed to the inner surface of the guard 91. For example, the lower outlet portion 32b may be fixed to the inner surface of the guide portion 92.

[0119] According to this embodiment, superheated steam can be supplied to both the upper and lower surfaces of the substrate W. Therefore, the temperature of the substrate W is less likely to drop, and the efficiency of resist stripping by SPM can be further improved. In addition, superheated steam can be supplied to the upper surface of the substrate W from a position relatively close to the substrate W. Therefore, the diffusion of the chemical atmosphere generated from the substrate W can be efficiently suppressed.

[0120] Furthermore, according to this embodiment, since the upper discharge portion 32a is positioned at the top of the outer circumferential surface of the inclined portion 93, gas (including superheated steam) is drawn in from the space above the guard 91 to the inside of the upper end 9a of the guard 91 without being obstructed by the upper discharge portion 32a.

[0121] The third discharge section 33 blows superheated steam toward the inner wall surface of the chamber 201. The third discharge section 33 is an example of a third superheated steam discharge section. In this embodiment, the third discharge section 33 blows superheated steam toward the inner wall surface of the side wall 203. The discharge of superheated steam from the third discharge section 33 is controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) causes superheated steam to be discharged from the third discharge section 33 when cleaning the inside of the chamber 201.

[0122] After cleaning the inside of chamber 201, a drying process is performed. For example, an inert gas such as nitrogen gas is supplied to the inside of chamber 201 to dry it. After cleaning, chamber 201 is used for substrate processing once the inside of chamber 201 has dried.

[0123] However, a large amount of pure water is used when cleaning the inside of the chamber 201. As a result, the inside of the chamber 201 remains difficult to dry after cleaning. In contrast, according to this embodiment, when cleaning the inside of the chamber 201, superheated steam is supplied from the third blowing section 33 toward the inner wall surface of the chamber 201, making it easier for the inner wall surface of the chamber 201 to dry. Therefore, the inside of the chamber 201 can be dried efficiently.

[0124] The cleaning of the inside of the chamber 201 may be performed, for example, each time the substrate processing unit 2 processes a predetermined number of substrates W (for example, 24 substrates). Alternatively, the cleaning of the inside of the chamber 201 may be performed after a predetermined amount of time has elapsed.

[0125] The fourth outlet 34 is located between the blower mechanism 3 and the substrate W held by the spin chuck 4, and blows water vapor into the lower space 2a of the chamber 201. The fourth outlet 34 is an example of a water vapor outlet. The blowing of water vapor from the fourth outlet 34 is controlled by the control device 101 (control unit 102). As already explained, water vapor is at a lower temperature than superheated water vapor. Also, water vapor has a higher water content and larger droplets compared to superheated water vapor. The water vapor supplied from the fourth outlet 34 may be in the form of mist.

[0126] In this embodiment, the fourth discharge section 34 is positioned above the first nozzle 6. For example, as shown in Figure 2, the fourth discharge section 34 may be supported by the rectifier plate 204. For example, the fourth discharge section 34 is fixed to the rectifier plate 204 via a bracket. Also, in a plan view, the fourth discharge section 34 is located outside the substrate W held by the spin chuck 4. Therefore, even if water droplets drip from the fourth discharge section 34, these droplets are unlikely to fall onto the substrate W. For example, the fourth discharge section 34 may be positioned to overlap with the liquid receiving section 9 in a plan view.

[0127] The fourth discharge section 34 blows out steam, for example, when the substrate W is being treated with the rinsing solution. In other words, the control device 101 (control unit 102) causes steam to be blown out from the fourth discharge section 34 when the rinsing solution is being discharged from the third nozzle 8. Hereinafter, the substrate treatment with the rinsing solution may be referred to as "rinsing treatment".

[0128] According to this embodiment, the diffusion of the chemical atmosphere can be further suppressed by water vapor. Specifically, as already explained, water vapor droplets are larger than superheated water vapor droplets. Therefore, water vapor droplets are more likely to collide with chemical components than superheated water vapor. Consequently, the suction force transmitted from the exhaust duct 206 to the inside of the guard 91 allows the chemical components to be efficiently discharged outside the chamber 201. In addition, some of the chemical components that collide with the water vapor droplets adhere to the liquid film of the rinsing solution formed on the upper surface of the substrate W and are discharged from the substrate W together with the rinsing solution. As a result, the chemical components are discharged outside the chamber 201 together with the rinsing solution. In particular, during the rinsing process, a chemical atmosphere is relatively unlikely to be generated. In other words, the chemical atmosphere does not increase easily during the rinsing process. Therefore, by supplying water vapor to the lower space 2a of the chamber 201 during the rinsing process, the diffusion of the chemical atmosphere can be suppressed more efficiently.

[0129] Next, the upper outlet section 32a will be described with reference to Figure 3. As shown in Figure 3, the upper outlet section 32a is annular and extends along the upper end 9a of the guard 91. The upper outlet section 32a is a tubular member, and superheated steam flows through the inside of the upper outlet section 32a. At least one outlet (not shown) is formed on the inner circumference side of the upper outlet section 32a. The outlet is an opening, and the superheated steam flowing through the upper outlet section 32a is blown out from the outlet of the upper outlet section 32a toward the upper surface of the substrate W.

[0130] The configuration of the lower outlet section 32b is the same as that of the upper outlet section 32a. Specifically, the lower outlet section 32b is annular and extends along the inner circumferential surface of the guard 91. The lower outlet section 32b is a tubular member, and superheated steam flows through the inside of the lower outlet section 32b. At least one outlet (not shown) is formed on the inner circumferential side of the lower outlet section 32b. The outlet is an opening, and the superheated steam flowing through the lower outlet section 32b is blown out from the outlet of the lower outlet section 32b toward the lower surface of the substrate W.

[0131] According to this embodiment, since the upper outlet portion 32a is annular, by forming multiple outlets in the upper outlet portion 32a, superheated steam can be supplied to the upper surface of the substrate W from multiple directions. Therefore, the temperature drop of the substrate W can be efficiently suppressed. However, the number of outlets in the upper outlet portion 32a may be just one.

[0132] Similarly, because the lower outlet section 32b is annular, by forming multiple outlets in the lower outlet section 32b, superheated steam can be supplied to the lower surface of the substrate W from multiple directions. Therefore, the temperature drop of the substrate W can be efficiently suppressed. However, the number of outlets in the lower outlet section 32b may be just one.

[0133] Furthermore, according to this embodiment, compared to the case where the upper discharge section 32a is configured with a plurality of nozzles arranged along the circumference, for example, the configuration of the substrate processing apparatus 100 becomes simpler, and the manufacturing of the substrate processing apparatus 100 becomes easier. Similarly, compared to the case where the lower discharge section 32b is configured with a plurality of nozzles arranged along the circumference, the configuration of the substrate processing apparatus 100 becomes simpler, and the manufacturing of the substrate processing apparatus 100 becomes easier. However, the upper discharge section 32a may be configured with at least one nozzle. Similarly, the lower discharge section 32b may be configured with at least one nozzle.

[0134] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 4. Figure 4 is another schematic cross-sectional view showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. More specifically, Figure 4 shows the interior of the substrate processing unit 2 as viewed from below.

[0135] As shown in Figure 4, the first outlet section 31 is annular. The first outlet section 31 is a tubular member, and superheated steam flows through the inside of the first outlet section 31. At least one outlet (not shown) is formed on the lower side of the first outlet section 31. The outlet is an opening, and the superheated steam flowing through the first outlet section 31 is blown out downward from the outlet of the first outlet section 31.

[0136] The configuration of the fourth outlet section 34 is the same as that of the first outlet section 31. Specifically, the fourth outlet section 34 is annular. The fourth outlet section 34 is a tubular member, and water vapor flows through the inside of the fourth outlet section 34. At least one outlet (not shown) is formed on the lower side of the fourth outlet section 34. The outlet is an opening, and the water vapor flowing through the fourth outlet section 34 is blown out downward from the outlet of the fourth outlet section 34.

[0137] According to this embodiment, since the first discharge section 31 is annular, by forming multiple outlets in the first discharge section 31, superheated steam can be supplied evenly to the lower space 2a of the chamber 201. However, the number of outlets in the first discharge section 31 may be just one.

[0138] Similarly, because the fourth outlet 34 is annular, by forming multiple outlets in the fourth outlet 34, water vapor can be supplied evenly to the space 2a below the chamber 201. However, the fourth outlet 34 may have only one outlet.

[0139] Furthermore, according to this embodiment, the configuration of the substrate processing apparatus 100 is simpler compared to, for example, the case in which the first discharge section 31 is composed of multiple nozzles, and the manufacturing of the substrate processing apparatus 100 becomes easier. Similarly, the configuration of the substrate processing apparatus 100 is simpler compared to the case in which the fourth discharge section 34 is composed of multiple nozzles, and the manufacturing of the substrate processing apparatus 100 becomes easier. However, the first discharge section 31 may be composed of at least one nozzle. Similarly, the fourth discharge section 34 may be composed of at least one nozzle.

[0140] In this embodiment, the fourth outlet section 34 is located inside the first outlet section 31, but the fourth outlet section 34 may be located outside the first outlet section 31. Also, if the first outlet section 31 and the fourth outlet section 34 are each composed of multiple nozzles, for example, the nozzles of the first outlet section 31 and the nozzles of the fourth outlet section 34 may be arranged alternately along the circumference.

[0141] As shown in Figure 4, the third outlet 33 extends along the side wall 203 of the chamber 201. The third outlet 33 is a tubular member, and superheated steam flows through the inside of the third outlet 33. The third outlet 33 has at least one outlet (not shown). The outlet is an opening. Specifically, the outlet of the third outlet 33 opens toward the inner surface of the side wall 203. The superheated steam flowing through the third outlet 33 is blown out from the outlet of the third outlet 33 toward the side wall 203 of the chamber 201.

[0142] According to this embodiment, since the third discharge section 33 extends along the side wall 203 of the chamber 201, by forming multiple outlets in the third discharge section 33, superheated steam can be supplied evenly to the inner circumferential surface of the side wall 203. However, the number of outlets in the third discharge section 33 may be just one.

[0143] Furthermore, according to this embodiment, the configuration of the substrate processing apparatus 100 is simpler compared to, for example, the case in which the third discharge section 33 is composed of multiple nozzles arranged along the side wall 203 of the chamber 201, and the manufacturing of the substrate processing apparatus 100 becomes easier. However, the third discharge section 33 may be composed of at least one nozzle.

[0144] Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to Figures 4 and 5. Figure 5 is a diagram showing the configuration of the substrate processing apparatus 100 of this embodiment. As shown in Figure 4, the substrate processing apparatus 100 further includes a steam supply unit 300. The steam supply unit 300 supplies superheated steam to the first outlet 31 and the third outlet 33. The steam supply unit 300 also supplies steam to the fourth outlet 34. Furthermore, as shown in Figure 5, the steam supply unit 300 supplies superheated steam to the second outlet 32 ​​(upper outlet 32a and lower outlet 32b).

[0145] As shown in Figure 4, the steam supply unit 300 includes a steam generator 300A, a first steam pipe 311, a first superheated steam valve 312, a first flow control valve 313, and a superheated steam generating heater 303. As shown in Figure 5, the steam supply unit 300 further includes a second steam pipe 321 and a second superheated steam valve 322. As shown in Figure 4, the steam supply unit 300 further includes a third steam pipe 331, a third superheated steam valve 332, a fourth steam pipe 341, a steam valve 342, and a second flow control valve 343.

[0146] The steam generation unit 300A is housed in the fluid cabinet 10A, as described with reference to Figure 1. The first superheated steam valve 312, the first flow control valve 313, the superheated steam generation heater 303, the second superheated steam valve 322, the third superheated steam valve 332, the steam valve 342, and the second flow control valve 343 are housed in the fluid box 10B, as described with reference to Figure 1. Parts of the first steam piping 311, the second steam piping 321, the third steam piping 331, and the fourth steam piping 341 are housed in the chamber 201.

[0147] The steam generation unit 300A generates steam. As shown in Figure 4, the steam generated from the steam generation unit 300A flows into the first steam pipe 311 and the fourth steam pipe 341. Specifically, the steam generation unit 300A has a storage unit 301 and a steam generation heater 302. The storage unit 301 stores pure water. The steam generation heater 302 heats the pure water stored in the storage unit 301 to generate steam. One end of the first steam pipe 311 and one end of the fourth steam pipe 341 are connected to the storage unit 301. The operation of the steam generation heater 302 is controlled by the control device 101 (control unit 102).

[0148] The other end of the first steam pipe 311 is connected to the first blowout section 31. The first steam pipe 311 is fitted with a first superheated steam valve 312, a first flow control valve 313, and a superheated steam generating heater 303.

[0149] The first steam pipe 311 is a tubular component through which steam and superheated steam flow. The superheated steam generating heater 303 heats the steam that flows from the storage section 301 into the first steam pipe 311 to generate superheated steam. The superheated steam flows through the first steam pipe 311 and flows into the first discharge section 31.

[0150] The first superheated steam valve 312 is an on / off valve that can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the first superheated steam valve 312. The actuator for the first superheated steam valve 312 is, for example, a pneumatic actuator or an electric actuator. When the first superheated steam valve 312 opens, superheated steam flows through the first steam piping 311 to the first discharge section 31, and superheated steam is supplied to the first discharge section 31. When the first superheated steam valve 312 closes, the supply of superheated steam to the first discharge section 31 stops.

[0151] The first flow control valve 313 controls the flow rate of superheated steam flowing through the first steam piping 311. Specifically, the opening degree of the first flow control valve 313 can be controlled, and the flow rate of superheated steam flowing through the first steam piping 311 is determined according to the opening degree of the first flow control valve 313. The actuator of the first flow control valve 313 is, for example, an electric actuator. The first flow control valve 313 may also be, for example, a motor needle valve. The opening degree of the first flow control valve 313 is controlled by the control device 101 (control unit 102).

[0152] As shown in Figure 5, one end of the second steam pipe 321 is connected to the first steam pipe 311 downstream of the superheated steam generating heater 303. The other end of the second steam pipe 321 is connected to the second blowout 32. The second steam pipe 321 is a tubular member, and superheated steam flows from the first steam pipe 311 into the second steam pipe 321. The superheated steam flows through the second steam pipe 321 and flows into the second blowout 32.

[0153] The second superheated steam valve 322 is interposed in the second steam piping 321. The second superheated steam valve 322 is an on / off valve and can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the second superheated steam valve 322. The actuator for the second superheated steam valve 322 is, for example, a pneumatic actuator or an electric actuator. When the second superheated steam valve 322 opens, superheated steam flows through the second steam piping 321 to the second discharge section 32, and superheated steam is supplied to the second discharge section 32. When the second superheated steam valve 322 closes, the supply of superheated steam to the second discharge section 32 stops.

[0154] In this embodiment, the second steam piping 321 includes the first piping 321a and the second piping 321b. The second superheated steam valve 322 includes the first valve 322a and the second valve 322b.

[0155] One end of the first pipe 321a of the second steam pipe 321 is connected to the first steam pipe 311 downstream of the superheated steam generating heater 303. The other end of the first pipe 321a of the second steam pipe 321 is connected to the upper discharge section 32a. Superheated steam that flows from the first steam pipe 311 into the first pipe 321a of the second steam pipe 321 flows through the first pipe 321a of the second steam pipe 321 and flows into the upper discharge section 32a.

[0156] The first valve 322a is interposed in the first pipe 321a of the second steam piping 321. When the first valve 322a opens, superheated steam flows through the first pipe 321a of the second steam piping 321 to the upper discharge section 32a, and superheated steam is supplied to the upper discharge section 32a. When the first valve 322a closes, the supply of superheated steam to the upper discharge section 32a stops.

[0157] One end of the second pipe 321b of the second steam pipe 321 is connected to the first pipe 321a of the second steam pipe 321 upstream of the first valve 322a. The other end of the second pipe 321b of the second steam pipe 321 is connected to the lower discharge section 32b. Superheated steam that flows from the first pipe 321a to the second pipe 321b of the second steam pipe 321 flows through the second pipe 321b of the second steam pipe 321 and flows into the lower discharge section 32b.

[0158] The second valve 322b is interposed in the second pipe 321b of the second steam piping 321. When the second valve 322b opens, superheated steam flows through the second pipe 321b of the second steam piping 321 to the lower discharge section 32b, supplying superheated steam to the lower discharge section 32b. When the second valve 322b closes, the supply of superheated steam to the lower discharge section 32b stops.

[0159] As shown in Figure 4, one end of the third steam pipe 331 is connected to the first steam pipe 311 downstream of the superheated steam generating heater 303. The other end of the third steam pipe 331 is connected to the third blowout section 33. The third steam pipe 331 is a tubular member, and superheated steam flows from the first steam pipe 311 into the third steam pipe 331. The superheated steam flows through the third steam pipe 331 and flows into the third blowout section 33.

[0160] The third superheated steam valve 332 is interposed in the third steam piping 331. The third superheated steam valve 332 is an on / off valve and can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the third superheated steam valve 332. The actuator for the third superheated steam valve 332 is, for example, a pneumatic actuator or an electric actuator. When the third superheated steam valve 332 opens, superheated steam flows through the third steam piping 331 to the third discharge section 33, and superheated steam is supplied to the third discharge section 33. When the third superheated steam valve 332 closes, the supply of superheated steam to the third discharge section 33 stops.

[0161] The other end of the fourth steam pipe 341 is connected to the fourth discharge section 34. A steam valve 342 and a second flow control valve 343 are interposed in the fourth steam pipe 341.

[0162] The fourth steam pipe 341 is a tubular component through which steam flows. Steam that flows from the storage section 301 into the fourth steam pipe 341 flows through the fourth steam pipe 341 and flows into the fourth discharge section 34.

[0163] The steam valve 342 is an on / off valve that can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the steam valve 342. The actuator for the steam valve 342 is, for example, a pneumatic actuator or an electric actuator. When the steam valve 342 opens, steam flows through the fourth steam pipe 341 to the fourth discharge section 34, and steam is supplied to the fourth discharge section 34. When the steam valve 342 closes, the supply of steam to the fourth discharge section 34 stops.

[0164] The second flow control valve 343 controls the flow rate of steam flowing through the fourth steam pipe 341. Specifically, the second flow control valve 343 has an adjustable opening, and the flow rate of steam flowing through the fourth steam pipe 341 is proportional to the opening of the second flow control valve 343. The actuator for the second flow control valve 343 is, for example, an electric actuator. The second flow control valve 343 may also be, for example, a motorized needle valve. The opening of the second flow control valve 343 is controlled by the control device 101 (control unit 102).

[0165] Next, the first chemical supply unit 62 will be described with reference to Figure 6. Figure 6 is a diagram showing the configuration of the first chemical supply unit 62 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 6, the first chemical supply unit 62 may further include a heater 643 in addition to the first chemical supply piping 621, the first component on / off valve 631, and the second component on / off valve 632 described with reference to Figure 2. The heater 643 is interposed in the first pipe 621a of the first chemical supply piping 621. For example, the heater 643 is interposed in the first pipe 621a of the first chemical supply piping 621 downstream of the first component on / off valve 631. The heater 643 heats the sulfuric acid flowing through the first pipe 621a of the first chemical supply piping 621.

[0166] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 7. The substrate processing method of this embodiment is performed, for example, by the substrate processing apparatus 100 described with reference to Figures 1 to 6. Figure 7 is a flowchart of the substrate processing method of this embodiment. More specifically, Figure 7 shows the processing flow by the control device 101 (control unit 102).

[0167] As shown in Figure 7, the substrate processing method of this embodiment includes steps S1 to S6. As explained with reference to Figure 2, while the process shown in Figure 7 is being executed, the control device 101 (control unit 102) controls the blower mechanism 3 to blow air into the chamber 201. Therefore, a downflow occurs in the space 2a below the chamber 201.

[0168] When the process shown in Figure 7 is started, the control device 101 (control unit 102) first controls the center robot CR to load the substrate W into the lower space 2a of the chamber 201 (step S1). The control device 101 (control unit 102) controls the spin chuck 4 to hold the substrate W loaded by the center robot CR (step S2). As a result, the substrate W is held in the chamber 201 by the spin chuck 4.

[0169] When the spin chuck 4 holds the substrate W, the control device 101 (control unit 102) controls the substrate processing unit 2 to perform substrate processing (step S3). Specifically, the control device 101 (control unit 102) controls the substrate processing unit 2 to supply SPM, hydrogen peroxide solution, rinse solution, and SC1 to the substrate W in the order of SPM, hydrogen peroxide solution, rinse solution, SC1, and rinse solution.

[0170] Furthermore, the control device 101 (control unit 102) causes the substrate processing unit 2 to perform steam processing in parallel with the substrate processing (step S4). For example, the control device 101 (control unit 102) blows superheated steam from the first blowing unit 31 into the space 2a below the chamber 201 while air is being blown into the chamber 201 by the blowing mechanism 3. Specifically, the control device 101 (control unit 102) blows superheated steam from the first blowing unit 31 during SPM processing.

[0171] When the substrate processing is complete, the control device 101 (control unit 102) controls the spin chuck 4 to release the substrate W (step S5). Once the substrate W is released from the spin chuck 4, the control device 101 (control unit 102) controls the center robot CR to remove the substrate W from the chamber 201 (step S6). As a result, the process shown in Figure 7 is completed.

[0172] Next, referring to Figures 1 to 15, the substrate processing (step S3) and steam processing (step S4) shown in Figure 7 will be explained. Figure 8 is a flowchart showing the substrate processing (step S3) and steam processing (step S4) included in the substrate processing method of this embodiment. Figure 9 is a schematic diagram showing the substrate processing unit 2 during preheating. Figure 10 is a schematic diagram showing the substrate processing unit 2 during SPM processing. Figure 11 is a schematic diagram showing the substrate processing unit 2 during paddle processing. Figure 12 is a schematic diagram showing the substrate processing unit 2 when processing the substrate W with hydrogen peroxide. Figure 13 is a schematic diagram showing the substrate processing unit 2 during rinsing. Figure 14 is a schematic diagram showing the substrate processing unit 2 when processing the substrate W with SC1. Figure 15 is a schematic diagram showing the substrate processing unit 2 during drying.

[0173] As shown in Figure 8, when substrate processing is started, the control device 101 (control unit 102) first controls the substrate heating unit 20 to heat the substrate W (step S31). In other words, the substrate W is heated before the SPM processing is performed. By heating the substrate W in advance, the efficiency of peeling the resist film by SPM is improved.

[0174] More specifically, as shown in Figure 9, the control device 101 (control unit 102) controls the power supply unit 23 to energize the heater embedded in the heating element 21. As a result, the heating element 21 is heated. The control device 101 (control unit 102) also controls the heater lifting unit 24 to raise the heating element 21 from the second lower position to the second upper position.

[0175] Here, the second lower position is the position in which the heating member 21 is close to the upper surface of the spin base 41. The second lower position may also be the position in which the heating member 21 is in contact with the upper surface of the spin base 41. The second upper position is the position in which the heating member 21 is close to the lower surface of the substrate W. When the heating member 21 is placed in the second upper position, the substrate W is heated by radiant heat from the heating member 21. Note that superheated steam and steam are not supplied to the lower space 2a of the chamber 201 during preheating.

[0176] The control device 101 (control unit 102) preheats the substrate W for a predetermined time, then controls the spin motor unit 5 to start the rotation of the substrate W held in the spin chuck 4 (see Figure 10). The control device 101 (control unit 102) also controls the first nozzle moving mechanism 61 to move the first nozzle 6 to the processing position. Specifically, the first nozzle 6 moves to a position opposite the center of the substrate W (see Figure 10).

[0177] When the rotation speed of the substrate W reaches a predetermined rotation speed, the control device 101 (control unit 102) controls the first chemical supply unit 62 to discharge SPM from the first nozzle 6 toward the rotating substrate W (step S32). As a result, as shown in Figure 10, SPM is supplied to the upper surface of the rotating substrate W, and a liquid film of SPM is formed on the upper surface of the substrate W. In other words, the control device 101 (control unit 102) controls the rotation speed of the substrate W when discharging SPM to form a liquid film of SPM on the upper surface of the substrate W.

[0178] Furthermore, the control device 101 (control unit 102) performs a first superheated steam treatment when SPM is discharged (step S41). Specifically, as shown in Figure 10, the control device 101 (control unit 102) controls the steam supply unit 300, which was described with reference to Figures 4 and 5, to blow out superheated steam from the first blowout unit 31. As a result, as already explained, the efficiency of resist stripping by SPM can be improved. In addition, the diffusion of the chemical atmosphere can be suppressed by the superheated steam.

[0179] The timing for initiating the discharge of superheated steam from the first discharge section 31 may be before the start of SPM discharge, or it may be at the same timing as the start of SPM discharge. Alternatively, the timing for initiating the discharge of superheated steam from the first discharge section 31 may be after the start of SPM discharge. The control device 101 (control unit 102) may continuously discharge superheated steam from the first discharge section 31, or it may discharge it intermittently.

[0180] The control device 101 (control unit 102) may blow out superheated steam from the first blowout unit 31 only before the start of SPM discharge, or it may blow out superheated steam from the first blowout unit 31 only when the SPM discharge starts. Alternatively, the control device 101 (control unit 102) may blow out superheated steam from the first blowout unit 31 for a period shorter than the period from the start to the end of SPM discharge, between the start and end of SPM discharge.

[0181] As shown in Figure 10, the control device 101 (control unit 102) may control the heater lifting unit 24 to lower the heating element 21 from the second upper position to the second lower position before the discharge of SPM begins.

[0182] The control device 101 (control unit 102) controls the first chemical supply unit 62 to stop the discharge of SPM after a predetermined time has elapsed since the start of SPM discharge. Then, the control device 101 (control unit 102) controls the rotation speed of the substrate W with the spin motor unit 5 to form a paddle state in which the liquid film of SPM is supported on the upper surface of the substrate W (step S33). For example, the control device 101 (control unit 102) may stop the rotation of the substrate W to form the paddle state (see Figure 11). Alternatively, the control device 101 (control unit 102) may rotate the substrate W at a low speed to form the paddle state. By forming a paddle state, the efficiency of resist peeling by SPM can be improved.

[0183] The control device 101 (control unit 102) performs a second superheated steam treatment when the paddle state is formed (during paddle processing) (step S42). Specifically, as shown in Figure 11, the control device 101 (control unit 102) controls the steam supply unit 300, which was described with reference to Figures 4 and 5, to blow out superheated steam from the first blowing unit 31 and also blow out superheated steam from the second blowing unit 32 (upper blowing unit 32a and lower blowing unit 32b). In other words, while continuing to supply superheated steam from the first blowing unit 31, superheated steam is blown from the second blowing unit 32 toward the substrate W held in the spin chuck 4. As a result, as already explained, the efficiency of resist stripping by SPM can be improved. Furthermore, the diffusion of the chemical atmosphere can be suppressed by the superheated steam.

[0184] Furthermore, since a liquid film of SPM is formed on the upper surface of the substrate W, it is not possible to directly raise the temperature of the substrate W from the upper side. In contrast, in this embodiment, during the paddle treatment, superheated steam is supplied from the lower blowout section 32b toward the lower surface of the substrate W. Therefore, the substrate W can be directly heated by the superheated steam. Thus, the resist film can be peeled off more efficiently.

[0185] As shown in Figure 11, the control device 101 (control unit 102) may, when forming the paddle state, control the heater lifting unit 24 to raise the heating element 21 from the second lower position to the second upper position, thereby heating the substrate W with the heating element 21.

[0186] The control device 101 (control unit 102) controls the spin motor unit 5 to start the rotation of the substrate W held in the spin chuck 4 after a predetermined time has elapsed since the start of the formation of the paddle state (see Figure 12). Alternatively, the control device 101 (control unit 102) controls the spin motor unit 5 to increase the rotation speed of the substrate W after a predetermined time has elapsed since the start of the formation of the paddle state.

[0187] When the rotation speed of the substrate W reaches a predetermined rotation speed, the control device 101 (control unit 102) controls the first chemical supply unit 62 to discharge hydrogen peroxide solution from the first nozzle 6 toward the rotating substrate W (step S34). As a result, as shown in Figure 12, hydrogen peroxide solution is supplied to the upper surface of the rotating substrate W, and a liquid film of hydrogen peroxide solution is formed on the upper surface of the substrate W. In other words, the control device 101 (control unit 102) controls the rotation speed of the substrate W when discharging hydrogen peroxide solution to form a liquid film of hydrogen peroxide solution on the upper surface of the substrate W. Specifically, the hydrogen peroxide solution causes the SPM to be discharged from the upper surface of the substrate W, and the liquid film of SPM is replaced by a liquid film of hydrogen peroxide solution.

[0188] The control device 101 (control unit 102) performs a third superheated steam treatment when hydrogen peroxide is discharged (step S43). Specifically, as shown in Figure 12, the control device 101 (control unit 102) controls the steam supply unit 300, which was described with reference to Figures 4 and 5, to stop the supply of superheated steam from the second discharge unit 32 (upper discharge unit 32a and lower discharge unit 32b), and to reduce the flow rate of superheated steam discharged from the first discharge unit 31.

[0189] Specifically, the control device 101 (control unit 102) blows out superheated steam from the first blowout section 31 at a first flow rate during SPM processing and paddle processing, and blows out superheated steam from the first blowout section 31 at a second flow rate smaller than the first flow rate when hydrogen peroxide is discharged. The control device 101 (control unit 102) adjusts the flow rate of superheated steam by controlling the first flow rate control valve 313 shown in Figure 4.

[0190] As shown in Figure 12, the control device 101 (control unit 102) may heat the substrate W with the heating element 21 when discharging hydrogen peroxide.

[0191] Hydrogen peroxide solution can oxidize the substrate W. In particular, the higher the temperature of the hydrogen peroxide solution, the more easily the substrate W is oxidized. Also, the higher the temperature of the substrate W, the more easily the substrate W is oxidized. In contrast, according to this embodiment, the amount of superheated steam supplied to the lower space 2a of the chamber 201 when the hydrogen peroxide solution is discharged can be reduced. As a result, the rise in the temperature of the hydrogen peroxide solution due to the superheated steam is suppressed, and the temperature of the substrate W is more easily reduced, thus suppressing the oxidation of the substrate W by hydrogen peroxide solution.

[0192] Furthermore, a large amount of fumes are generated from the substrate W when hydrogen peroxide is discharged. In addition, fumes tend to be generated from the discharge port of the first nozzle 6 when hydrogen peroxide is discharged. According to this embodiment, the diffusion of fumes can be suppressed by supplying superheated steam when hydrogen peroxide is discharged.

[0193] Furthermore, when hydrogen peroxide solution is discharged, room-temperature hydrogen peroxide solution is discharged toward the substrate W on which a high-temperature SPM liquid film is formed. As a result, a temperature gradient is generated within the surface of the substrate W, causing the substrate W to vibrate. In contrast, according to this embodiment, by supplying superheated steam when hydrogen peroxide solution is discharged, the temperature gradient Occurrence This can suppress vibrations. Therefore, vibrations of the substrate W can be suppressed.

[0194] The control device 101 (control unit 102) controls the first chemical supply unit 62 to stop the discharge of hydrogen peroxide after a predetermined time has elapsed since the start of hydrogen peroxide discharge. The control device 101 (control unit 102) also controls the first nozzle moving mechanism 61 to move the first nozzle 6 to the first retraction area.

[0195] The control device 101 (control unit 102) retracts the first nozzle 6 to the first retraction area, and then, while the substrate W held in the spin chuck 4 is rotating, controls the rinse liquid supply unit 82 to discharge rinse liquid from the third nozzle 8 toward the rotating substrate W (step S35). As a result, as shown in Figure 13, rinse liquid is supplied to the upper surface of the rotating substrate W, and a liquid film of rinse liquid is formed on the upper surface of the substrate W. In other words, the control device 101 (control unit 102) controls the rotation speed of the substrate W when the rinse liquid is discharged to form a liquid film of rinse liquid on the upper surface of the substrate W. Specifically, the hydrogen peroxide solution is discharged from the upper surface of the substrate W by the rinse liquid, and the liquid film of hydrogen peroxide solution is replaced by a liquid film of rinse liquid.

[0196] The control device 101 (control unit 102) supplies steam to the lower space 2a of the chamber 201 when the rinse liquid is being discharged, while air is being blown into the lower space 2a of the chamber 201 by the blower mechanism 3 (step S44). Specifically, as shown in Figure 13, the control device 101 (control unit 102) controls the steam supply unit 300, which was described with reference to Figures 4 and 5, to blow out steam from the fourth blowout unit 34. When superheated steam is to be supplied from the first blowout unit 31 when hydrogen peroxide is being discharged (step S34), the control device 101 (control unit 102) controls the steam supply unit 300, which was described with reference to Figures 4 and 5, to stop the supply of superheated steam from the first blowout unit 31 when the rinse liquid is being discharged.

[0197] According to this embodiment, as already described, by supplying water vapor to the lower space 2a of the chamber 201 during the rinsing process, the diffusion of the chemical atmosphere can be suppressed more efficiently. As shown in Figure 13, the control device 101 (control unit 102) may control the heater lifting unit 24 to lower the heating member 21 from the second upper position to the second lower position before the start of the discharge of the rinsing liquid. This makes it more difficult for the rinsing liquid to evaporate from the upper surface of the substrate W.

[0198] The control device 101 (control unit 102) controls the rinse liquid supply unit 82 to stop the discharge of rinse liquid after a predetermined time has elapsed since the start of rinse liquid discharge. After stopping the discharge of rinse liquid, the control device 101 (control unit 102) controls the second nozzle moving mechanism 71 to move the second nozzle 7 from the second retraction area to a position facing the center of the substrate W.

[0199] When the control device 101 (control unit 102) moves the second nozzle 7 to a position opposite the center of the substrate W, it controls the second chemical supply unit 72 and the second nozzle moving mechanism 71 to perform a half-scan process while the substrate W held in the spin chuck 4 is rotating. Specifically, the second nozzle 7 is moved from a position opposite the center of the substrate W to a position opposite the peripheral edge of the substrate W, and SC1 is discharged from the second nozzle 7 toward the rotating substrate W (step S36). As a result, the rinse liquid is discharged from the upper surface of the substrate W by SC1, and the substrate W is treated by SC1.

[0200] The control device 101 (control unit 102) performs a fourth superheated steam treatment when SC1 is discharged (step S45). Specifically, as shown in Figure 14, the control device 101 (control unit 102) controls the steam supply unit 300, which was described with reference to Figures 4 and 5, to blow out superheated steam from the first blowout unit 31.

[0201] Since SC1 is supplied to the substrate W by a half-scan process, the central region of the substrate W becomes more prone to drying as the second nozzle 7 moves from a position facing the center of the substrate W to a position facing the periphery of the substrate W. Similarly, the periphery of the substrate W becomes more prone to drying as the second nozzle 7 moves from a position facing the periphery of the substrate W to a position facing the center of the substrate W. In contrast, according to this embodiment, since superheated steam is supplied when SC1 is discharged, the humidity in the lower space 2a can be kept high. Therefore, the substrate W becomes less prone to drying when SC1 is discharged. As shown in Figure 14, the heating member 21 is positioned at the second lower position when SC1 is discharged. Therefore, drying of the substrate W can be further suppressed.

[0202] Furthermore, according to this embodiment, since superheated steam is supplied when SC1 is discharged, the SC1 supplied to the upper surface of the substrate W can be heated up. As a result, the main surface of the substrate W becomes more susceptible to oxidation by SC1.

[0203] Furthermore, since the substrate W is prone to drying out during the discharge of SC1, the control device 101 (control unit 102) may control the air blowing mechanism 3 to reduce the downflow air velocity. Reducing the downflow air velocity makes it more difficult for the substrate W to dry out.

[0204] The control device 101 (control unit 102) controls the second chemical supply unit 72 to stop the discharge of SC1 after a predetermined time has elapsed since the start of SC1 discharge. The control device 101 (control unit 102) also controls the second nozzle moving mechanism 71 to move the second nozzle 7 to the second retraction area.

[0205] The control device 101 (control unit 102) moves the second nozzle 7 to the second retraction area, then proceeds to step S3 5 Similarly, the rinsing liquid is discharged from the third nozzle 8 toward the rotating substrate W (step S37). As a result, SC1 is discharged from the upper surface of the substrate W by the rinsing liquid, and a liquid film of the rinsing liquid is formed on the upper surface of the substrate W.

[0206] The control device 101 (control unit 102) supplies steam to the lower space 2a of the chamber 201 when the rinsing liquid is discharged, similar to step S44 (step S46). Also, when the rinsing liquid is discharged, the control device 101 (control unit 102) controls the steam supply unit 300, as described with reference to Figures 4 and 5, to stop the supply of superheated steam from the first blowout unit 31.

[0207] According to this embodiment, as already described, the chemical atmosphere can be reduced by supplying steam when the rinse solution is discharged. Furthermore, the steam can be used to raise the temperature of the rinse solution.

[0208] Furthermore, if the downflow air velocity is reduced when SC1 is discharged, the control device 101 (control unit 102) controls the blower mechanism 3 to restore the downflow air velocity to its original level when the rinse liquid is discharged.

[0209] The control device 101 (control unit 102) controls the rinse liquid supply unit 82 to stop the discharge of the rinse liquid after a predetermined time has elapsed since the start of the rinse liquid discharge. After stopping the discharge of the rinse liquid, the control device 101 (control unit 102) controls the rotation speed of the substrate W with the spin motor unit 5 to remove the rinse liquid from the top surface of the substrate W and perform a drying process to dry the top surface of the substrate W (step S38). As a result, the process shown in Figure 8 is completed.

[0210] Specifically, the control device 101 (control unit 102) controls the spin motor unit 5 to rotate the substrate W at high speed. By rotating the substrate W at high speed, the rinsing liquid adhering to the substrate W is shaken off, and the substrate W is dried. Also, as shown in Figure 15, during the drying process, the control device 101 (control unit 102) controls the steam supply unit 300, which was explained with reference to Figures 4 and 5, to release steam from the fourth blowing unit 34. of Stop the steam from being released.

[0211] According to this embodiment, since water vapor and superheated water vapor are not supplied to the lower space 2a of the chamber 201 during the drying process, the humidity of the chamber 201 can be reduced compared to the case where water vapor or superheated water vapor is supplied. Therefore, the substrate W can be dried efficiently.

[0212] Furthermore, according to this embodiment, steam is supplied when the rinsing solution is discharged (step S37) to raise the temperature of the rinsing solution. As a result, the rinsing solution evaporates more easily during the drying process, and the substrate W can be dried efficiently.

[0213] Next, the chamber cleaning method of this embodiment will be described with reference to Figure 16. Figure 16 is a schematic diagram showing the substrate processing unit 2 when cleaning the inside of the chamber 201.

[0214] The chamber cleaning method of this embodiment includes a step of cleaning the inside of the chamber 201. As shown in Figure 16, the control device 101 (control unit 102) controls the steam supply unit 300, which was described with reference to Figures 4 and 5, to supply steam from the fourth blowing unit 34 to the lower space 2a of the chamber 201. of In addition to blowing it out, superheated steam is blown out from the third blowing section 33 toward the inner wall surface of the side wall 203.

[0215] According to this embodiment, when cleaning the inside of the chamber 201, steam is supplied to the lower space 2a of the chamber 201, so that the chemical components floating in the lower space 2a of the chamber 201 can be efficiently discharged to the outside of the chamber 201. Furthermore, as already described, when cleaning the inside of the chamber 201, superheated steam is supplied from the third blowing section 33 toward the inner wall surface of the chamber 201, so that the inner wall surface of the chamber 201 dries more easily. Therefore, the inside of the chamber 201 can be dried efficiently.

[0216] The flow rate of steam supplied from the fourth blowout section 34 when cleaning the inside of the chamber 201 is the same as the rinsing process (steps S35 and S35). 7 The flow rate of steam supplied from the fourth outlet 34 may be greater than the flow rate of steam supplied from the fourth outlet 34 during this process. By increasing the flow rate of steam, the chemical components can be discharged more efficiently to the outside of the chamber 201. The control device 101 (control unit 102) adjusts the flow rate of steam by controlling the second flow control valve 343 shown in Figure 4.

[0217] Next, a modified example of the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 17. Figure 17 is a schematic cross-sectional view showing the configuration of the substrate processing unit 2 included in a modified example of the substrate processing apparatus 100 of this embodiment.

[0218] As shown in Figure 17, the substrate processing apparatus 100 may include a blocking section 400. The blocking section 400 may include a disc-shaped blocking plate 401, a support shaft 402, a support arm 403, and a lifting section 404.

[0219] The shut-off plate 401 is positioned between the rectifier plate 204 and the spin chuck 4. Therefore, the shut-off plate 401 is positioned above the substrate W held by the spin chuck 4 and faces the substrate W held by the spin chuck 4. The diameter of the shut-off plate 401 is larger than the diameter of the substrate W.

[0220] The barrier plate 401 is supported in a horizontal position by a support shaft 402. The support shaft 402 may extend, for example, along a substantially vertical direction. The support shaft 402 is supported by a support arm 403.

[0221] The support arm 403 extends horizontally above the barrier plate 401. The lifting / lowering section 404 of the barrier unit 400 moves the support arm 403 vertically. In other words, the lifting / lowering section 404 of the barrier unit 400 raises and lowers the support arm 403. As the support arm 403 moves up and down, the barrier plate 401 moves up and down. The lifting / lowering section 404 of the barrier unit 400 is controlled by the control device 101 (control unit 102). The lifting / lowering section 404 may include, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. Specifically, the lifting / lowering section 404 of the barrier unit 400 raises and lowers the barrier plate 401 between a third upper position and a third lower position.

[0222] When the barrier plate 401 is positioned in the third lower position, the gap between the substrate W held by the spin chuck 4 and the barrier plate 401 becomes such that the first nozzle 6 and the second nozzle 7 cannot enter the space between the substrate W held by the spin chuck 4 and the barrier plate 401. The control device 101 (control unit 102) may, for example, position the barrier plate 401 in the third lower position during the drying process of the substrate W (step S38 in Figure 8).

[0223] When the barrier plate 401 is positioned in the third upper position, the gap between the substrate W held by the spin chuck 4 and the barrier plate 401 becomes large enough for the first nozzle 6 and the second nozzle 7 to enter between the substrate W held by the spin chuck 4 and the barrier plate 401. The control device 101 (control unit 102) may, for example, position the barrier plate 401 in the third upper position from the SPM process (step S32 in Figure 8) to the rinsing process (step S37 in Figure 8) before the drying process (step S38 in Figure 8).

[0224] Furthermore, if the substrate processing apparatus 100 is equipped with a shut-off section 400, it is preferable that the diameters of the first discharge section 31 and the fourth discharge section 34 are larger than the diameter of the shut-off plate 401.

[0225] Embodiments of the present invention have been described above with reference to the drawings (Figures 1 to 17). However, the present invention is not limited to the embodiments described above, and can be implemented in various forms without departing from its spirit. Furthermore, the multiple components disclosed in the above embodiments can be modified as appropriate. For example, some components from all the components shown in one embodiment may be added to the components of another embodiment, or some components from all the components shown in one embodiment may be deleted from the embodiment.

[0226] The drawings schematically show each component in order to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual dimensions due to the convenience of drawing creation. Furthermore, the configuration of each component shown in the above embodiments is merely an example and is not particularly limiting, and it goes without saying that various modifications are possible without substantially departing from the effects of the present invention.

[0227] For example, in the embodiment described with reference to Figures 1 to 17, the spin chuck 4 was a clamping type chuck in which a plurality of chuck members 42 were brought into contact with the peripheral edge surface of the substrate W. However, the method of holding the substrate W is not particularly limited as long as the substrate W can be held horizontally. For example, the spin chuck 4 may be a vacuum type chuck or a Bernoulli type chuck.

[0228] Furthermore, in the embodiment described with reference to Figures 1 to 17, when hydrogen peroxide solution is discharged, the control device 101 (control unit 102) reduces the flow rate of superheated steam discharged from the first discharge unit 31. However, when hydrogen peroxide solution is discharged, the control device 101 (control unit 102) may also stop the discharge of superheated steam from the first discharge unit 31.

[0229] Furthermore, in the embodiments described with reference to Figures 1 to 17, the substrate heating unit 20 heated the substrate W with a heater, but the components used by the substrate heating unit 20 to heat the substrate W are not particularly limited, as long as they are components capable of heating the substrate W. For example, the substrate heating unit 20 may heat the substrate W by laser irradiation or light irradiation.

[0230] Furthermore, in the embodiment described with reference to Figures 1 to 17, the substrate heating unit 20 is provided in the substrate processing apparatus 100, but the substrate heating unit 20 may be omitted. In this case, preheating may be performed by blowing out superheated steam from the second blowing unit 32.

[0231] Furthermore, in the embodiment described with reference to Figures 1 to 17, steam was supplied when the rinse liquid was discharged, but the supply of steam when the rinse liquid is discharged may be omitted.

[0232] Furthermore, in the embodiments described with reference to Figures 1 to 17, the first discharge section 31 was annular, but the shape of the first discharge section 31 is not particularly limited. For example, the first discharge section 31 may be a rectangular annular shape or a meandering shape. Similarly, when the first discharge section 31 is composed of multiple nozzles, the shape of the arrangement of the multiple nozzles is not particularly limited.

[0233] Similarly, in the embodiment described with reference to Figures 1 to 17, the fourth discharge section 34 was annular, but the shape of the fourth discharge section 34 is not particularly limited. Similarly, when the fourth discharge section 34 is composed of multiple nozzles, the shape of the arrangement of the multiple nozzles is not particularly limited.

[0234] Furthermore, although paddle processing was performed in the embodiments described with reference to Figures 1 to 17, paddle processing may be omitted.

[0235] Furthermore, in the embodiments described with reference to Figures 1 to 17, the second outlet section 32 includes an upper outlet section 32a and a lower outlet section 32b, but the second outlet section 32 may include only one of the upper outlet section 32a and the lower outlet section 32b.

[0236] Furthermore, in the embodiment described with reference to Figures 1 to 17, the substrate processing apparatus 100 is equipped with a fourth blowout section 34, but the fourth blowout section 34 may be omitted. In this case, the superheated steam generating heater 303 may be controlled to exclusively supply superheated steam and steam from the first blowout section 31.

[0237] Furthermore, in the embodiment described with reference to Figures 1 to 17, the first discharge section 31 is positioned below the rectifier plate 204, but the first discharge section 31 may also be positioned above the rectifier plate 204. That is, the first discharge section 31 may be positioned in the upper space 2b. In this case, the first discharge section 31 is positioned so that superheated steam can be blown into the lower space 2a through the through-hole 204a of the rectifier plate 204. The third discharge section 33 and the fourth discharge section 34 may also be positioned above the rectifier plate 204.

[0238] Furthermore, in the embodiment described with reference to Figures 1 to 17, steam was supplied when cleaning the inside of the chamber 201, but superheated steam may also be supplied when cleaning the inside of the chamber 201. By raising the temperature of the components placed inside the chamber 201 with superheated steam, the components placed inside the chamber 201 become easier to clean. [Industrial applicability]

[0239] The present invention is useful for apparatus used to process substrates and has industrial applicability. [Explanation of symbols]

[0240] 2: PCB Processing Unit 3: Blower mechanism 4: Spin Chuck 5: Spin motor section 6: Nozzle No. 1 7: Second nozzle 8: Third nozzle 9: Liquid receiving section 31: First air outlet 32: Second air outlet 32a: Upper blowing part 32b: Lower blowing part 33: Third outlet 34: Fourth air outlet 62: First chemical supply unit 72: Second Chemical Supply Unit 82: Rinse liquid supply unit 100: Substrate processing equipment 101: Control device 102: Control Unit 103: Storage section 201: Chamber 203: Side wall 300: Steam supply unit W: Circuit board

Claims

1. A chamber where substrate processing takes place, A blowing mechanism for blowing air into the chamber, The chamber includes a substrate holding section for holding the substrate, A substrate rotating unit that rotates the substrate held in the substrate holding unit, A first mixed liquid discharge unit located within the chamber discharges a first mixed liquid, which is a mixture of sulfuric acid and hydrogen peroxide, toward the substrate that is rotated by the substrate rotating unit. A first superheated steam blowing section is located between the blowing mechanism and the substrate held in the substrate holding section, and blows superheated steam into the chamber. A substrate processing apparatus comprising:

2. The system further includes a control unit that controls the discharge of the first mixed liquid from the first mixed liquid discharge unit and the blowing out of the superheated steam from the first superheated steam blowing unit. The substrate processing apparatus according to claim 1, wherein the control unit causes the superheated steam to be blown out from the first superheated steam blowing unit when the first mixed liquid is discharged.

3. A liquid receiving section for receiving the first mixed liquid discharged from the substrate which is rotated by the substrate rotating section, A second superheated steam blowing section is supported by the liquid receiving section and blows the superheated steam toward the substrate held by the substrate holding section. The substrate processing apparatus according to claim 1, further comprising the following:

4. A liquid receiving section for receiving the first mixed liquid discharged from the substrate which is rotated by the substrate rotating section, A second superheated steam blowing section is supported by the liquid receiving section and blows the superheated steam toward the substrate held by the substrate holding section. Furthermore, The control unit further controls the discharge of superheated steam from the second superheated steam discharge unit and the rotation of the substrate by the substrate rotating unit. The control unit controls the rotation speed of the substrate when the first mixed liquid is discharged, causing a liquid film of the first mixed liquid to form on the upper surface of the substrate. The control unit stops the discharge of the first mixed liquid and controls the rotation speed of the substrate to form a paddle state in which the liquid film is supported on the upper surface of the substrate. The substrate processing apparatus according to claim 2, wherein the control unit blows out the superheated steam from the first superheated steam blowing unit and the second superheated steam blowing unit when the paddle state is formed.

5. The second superheated steam outlet is, An upper superheated steam blowing section blows out the superheated steam toward the upper surface of the substrate held in the substrate holding section, A lower superheated steam outlet that blows the superheated steam toward the lower surface of the substrate held in the substrate holder, A substrate processing apparatus according to claim 3 or claim 4, including the following:

6. The first mixed liquid discharge unit discharges the first mixed liquid and hydrogen peroxide solution exclusively. The control unit further controls the discharge of the hydrogen peroxide solution from the first mixed liquid discharge unit, The substrate processing apparatus according to claim 2, wherein the control unit stops the blowing out of the superheated steam when the hydrogen peroxide solution is discharged.

7. The first mixed liquid discharge unit discharges the first mixed liquid and hydrogen peroxide solution exclusively. The control unit further controls the discharge of the hydrogen peroxide solution from the first mixed liquid discharge unit, The control unit, when the first mixed liquid is discharged, causes the superheated steam to be blown out from the first superheated steam blowing unit at a first flow rate. The substrate processing apparatus according to claim 2, wherein the control unit causes the superheated steam to be blown out from the first superheated steam blowing unit at a second flow rate smaller than the first flow rate when the hydrogen peroxide solution is discharged.

8. The system further includes a second mixed liquid discharge unit that discharges a second mixed liquid, which is a mixture of ammonia water, hydrogen peroxide water, and pure water, toward the substrate that is rotated by the substrate rotating unit, The control unit further controls the discharge of the second mixed liquid from the second mixed liquid discharge unit. The substrate processing apparatus according to claim 2, wherein the control unit blows out the superheated steam when the second mixed liquid is discharged.

9. A rinse liquid dispensing unit that dispenses rinse liquid toward the substrate which is rotated by the substrate rotating unit, A steam blowing section is located between the blowing mechanism and the substrate held in the substrate holding section, and blows steam into the chamber. Furthermore, The control unit further controls the discharge of the rinse liquid from the rinse liquid discharge unit and the blowing of the steam from the steam blowing unit. The substrate processing apparatus according to claim 2, wherein the control unit blows out the water vapor when the rinse liquid is discharged.

10. The control unit further controls the rotation of the substrate by the substrate rotating unit, After stopping the discharge of the rinse liquid, the control unit controls the rotation speed of the substrate to remove the rinse liquid from the upper surface of the substrate and perform a drying process to dry the upper surface of the substrate. The substrate processing apparatus according to claim 9, wherein the control unit stops the blowing of water vapor when the drying process is performed.

11. A third superheated steam outlet that blows superheated steam toward the inner wall surface of the chamber, A steam blowing section is located between the blowing mechanism and the substrate holding section and blows steam into the chamber. Furthermore, The control unit further controls the discharge of steam from the steam discharge unit and the discharge of superheated steam from the third superheated steam discharge unit. The substrate processing apparatus according to claim 2, wherein the control unit causes the steam to be blown out from the steam blowing section and the superheated steam to be blown out from the third superheated steam blowing section when cleaning the inside of the chamber.

12. The substrate holding section holds the substrate in the chamber, and With air being blown into the chamber by the blowing mechanism, a step is made to blow superheated steam into the chamber from a first superheated steam blowing section located between the blowing mechanism and the substrate held by the substrate holding section, The process includes a first mixed liquid discharge step in which the substrate held in the substrate holding part is rotated, and a first mixed liquid, which is a mixture of sulfuric acid and hydrogen peroxide, is discharged toward the rotating substrate. A substrate processing method comprising blowing out the superheated steam from the first superheated steam blowing section when the first mixed liquid is discharged.

13. The process further includes a paddle step in which the discharge of the first mixture is stopped and the rotation speed of the substrate is controlled to form a paddle state in which a liquid film of the first mixture is supported on the upper surface of the substrate, When the paddle state is formed, the superheated steam is blown out from the first superheated steam blowing section, and the superheated steam is blown out from the second superheated steam blowing section toward the substrate held in the substrate holding section. The substrate processing method according to claim 12, wherein the second superheated steam blowing section is supported by a liquid receiving section that receives the first mixed liquid discharged from the rotating substrate.

14. The second superheated steam outlet is, An upper superheated steam blowing section blows out the superheated steam toward the upper surface of the substrate held in the substrate holding section, A lower superheated steam outlet that blows the superheated steam toward the lower surface of the substrate held in the substrate holder, The substrate processing method according to claim 13, including the method described in claim 13.

15. The process further includes an extrusion step in which hydrogen peroxide solution is discharged toward the rotating substrate to discharge a liquid film of the first mixture from the upper surface of the substrate, The substrate processing method according to claim 13 or claim 14, wherein the blowing out of the superheated steam is stopped when the hydrogen peroxide solution is discharged.

16. The process further includes an extrusion step in which hydrogen peroxide solution is discharged toward the rotating substrate to discharge a liquid film of the first mixture from the upper surface of the substrate, When the first mixed liquid is discharged, the superheated steam is blown out from the first superheated steam blowout at a first flow rate. The substrate processing method according to claim 13 or claim 14, wherein, when the hydrogen peroxide solution is discharged, the superheated steam is discharged from the first superheated steam outlet at a second flow rate smaller than the first flow rate.

17. The process further includes a second mixed liquid discharge step, in which, while the substrate held in the substrate holding part is rotating, a second mixed liquid, which is a mixture of ammonia water, hydrogen peroxide water, and pure water, is discharged toward the rotating substrate. The substrate processing method according to claim 12, wherein the superheated steam is blown out from the first superheated steam blowing section when the second mixed liquid is discharged.

18. With air being blown into the chamber by the blowing mechanism, a step is made to blow water vapor into the chamber from a water vapor blowing section located between the blowing mechanism and the substrate held by the substrate holding section, The process involves discharging a rinse liquid toward the rotating substrate while the substrate held in the substrate holding part is being rotated. It further includes, The substrate processing method according to claim 12, wherein the steam is blown out from the steam blowing section when the rinse liquid is discharged.

19. After stopping the discharge of the rinse liquid, the process further includes a drying step in which the rotation speed of the substrate is controlled to remove the rinse liquid from the upper surface of the substrate and dry the upper surface of the substrate. The substrate processing method according to claim 18, wherein the blowing of water vapor is stopped during the drying process.

20. This includes a step of cleaning the inside of the chamber where the substrate processing takes place. A chamber cleaning method comprising: blowing superheated steam toward the inner wall surface of the chamber when cleaning the inside of the chamber; and blowing steam into the chamber from a steam blowing part located between a blowing mechanism that blows air into the chamber and a substrate holding part that holds a substrate inside the chamber.

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