Joint-type wiring components
By employing a distinct conductive film material for the first conductive film, the joined wiring member addresses reliability issues through stable metal connections and improved conductivity, overcoming misalignment and stress challenges.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- KK TOSHIBA
- Filing Date
- 2023-03-22
- Publication Date
- 2026-06-23
AI Technical Summary
Existing joined wiring members face issues with reliability due to misalignment and material compatibility during the formation of bonding metal parts, leading to gaps and increased contact resistance, which can result in poor conductivity and peeling under stress.
The solution involves using a first conductive film made of a different material than the second conductive film and bonding metal portion, ensuring the first conductive film remains intact during etching processes, and applying heat and force to form a stable metal connection, while additional conductive films enhance electrical connectivity and protect against stress.
This approach improves the reliability of the joined wiring member by maintaining electrical connection and reducing stress-induced peeling, enhancing conductivity and stability.
Smart Images
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Abstract
Description
Technical Field
[0001] Embodiments of the present invention relate to a joined wiring member.
Background Art
[0002] A structure in which two chips are joined by joining metals is known.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Patent Document 2
Summary of the Invention
Problems to be Solved by the Invention
[0004] Embodiments of the present invention aim to provide a highly reliable joined wiring member.
Means for Solving the Problems
[0005] According to an embodiment of the present invention, a joined wiring member includes a first substrate, a first insulating layer laminated on the first substrate, a first wiring layer provided in the first insulating layer, and a first wiring portion having a first connection hole reaching the first wiring layer from the surface of the first insulating layer, a second substrate facing the first wiring portion in a first direction, a joining metal portion provided between the first connection hole and the second substrate in the first direction, a first conductive film provided in the first connection hole and contacting the first wiring layer at the bottom surface of the first connection hole, and a second conductive film provided between the first conductive film and the joining metal portion and contacting the first conductive film and the joining metal portion. The first conductive film is made of a material different from the material of the second conductive film and the material of the joining metal portion.
Brief Description of the Drawings
[0006] [Figure 1] This is a schematic cross-sectional view of a joint-type wiring member according to the first embodiment. [Figure 2] This is a schematic cross-sectional view showing a manufacturing method for a joint-type wiring member according to the first embodiment. [Figure 3] This is a schematic cross-sectional view showing a manufacturing method for a joint-type wiring member according to the first embodiment. [Figure 4] This is a schematic cross-sectional view showing a manufacturing method for a joint-type wiring member according to the first embodiment. [Figure 5] This is a schematic cross-sectional view showing a manufacturing method for a joint-type wiring member according to the first embodiment. [Figure 6] This is a schematic cross-sectional view showing a manufacturing method for a joint-type wiring member according to the first embodiment. [Figure 7] This is a schematic cross-sectional view showing a manufacturing method for a joint-type wiring member according to the first embodiment. [Figure 8] This is a schematic cross-sectional view of a joint-type wiring member according to the second embodiment. [Figure 9] This is a schematic cross-sectional view of a joint-type wiring member according to the third embodiment. [Figure 10] This is a schematic plan view showing an example of the arrangement of the first conductive film in the embodiment. [Modes for carrying out the invention]
[0007] Each embodiment will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may be depicted differently in different drawings. Furthermore, identical or similar elements are assigned the same symbol.
[0008] [First Embodiment] As shown in Figure 1, the joint-type wiring member 1 of the first embodiment comprises a first chip 100 and a second chip 200. The first chip 100 and the second chip 200 are joined via a joining metal portion 50 and stacked in the first direction Z. The two directions orthogonal to the first direction Z are denoted as the second direction X and the third direction Y. The second direction X and the third direction Y are orthogonal to each other.
[0009] The first chip 100 has a first substrate 10. The first substrate 10 has a first surface 11 and a second surface 12 located opposite the first surface 11 in a first direction Z. The first substrate 10 is, for example, a silicon substrate.
[0010] The second chip 200 has a second substrate 20. The second substrate 20 has a third surface 21 facing the first surface 11 of the first substrate 10 in the first direction Z, and a fourth surface 22 located on the opposite side of the third surface 21 in the first direction Z. The second substrate 20 is, for example, a silicon substrate.
[0011] The first chip 100 has a first wiring section 30 laminated on a first substrate 10. The first wiring section 30 is provided on the first surface 11 of the first substrate 10. In the first direction Z, the first wiring section 30 is located between the first substrate 10 and the second substrate 20. The first wiring section 30 has a first insulating layer 33 and a first wiring layer 31 provided within the first insulating layer 33. The first wiring layer 31 is made of a material mainly containing copper, for example. Figure 1 shows one first wiring layer 31, but the first wiring section 30 may have multiple first wiring layers 31.
[0012] The first insulating layer 33 has a surface 33a facing the second substrate 20 in the first direction Z. The first wiring portion 30 has a first connection hole 32 reaching the first wiring layer 31 from the surface 33a of the first insulating layer 33. The first connection hole 32 has an opening on the surface 33a side of the first insulating layer 33 and a bottom surface on the first wiring layer 31 side. The first wiring portion 30 has, for example, a plurality of first connection holes 32. Corresponding to the positions of the plurality of first connection holes 32, a plurality of bonding metal portions 50 are arranged in at least one of the second direction X and the third direction Y. The bonding metal portion 50 is provided between the first connection hole 32 and the second substrate 20 in the first direction Z.
[0013] The first chip 100 is provided in the first connection hole 32 and further has a first conductive film 61 that contacts the first wiring layer 31 at the bottom surface of the first connection hole 32. The first conductive film 61 is continuously provided on the surface 33a of the first insulating layer 33, the side surface and the bottom surface of the first connection hole 32. The first conductive film 61 has a first portion 61a located in the first connection hole 32 and a second portion 61b located on the surface 33a of the first insulating layer 33.
[0014] The first chip 100 is provided between the first conductive film 61 and the bonding metal portion 50 and further has a second conductive film 71 that contacts the first conductive film 61 and the bonding metal portion 50. A plurality of second conductive films 71 are separated from each other and provided under each of the plurality of bonding metal portions 50.
[0015] The bonding metal portion 50 is electrically connected to the first wiring layer 31 via the first conductive film 61 and the second conductive film 71. The bonding metal portion 50 has a first metal portion 51a located in the first connection hole 32 and a second metal portion 51b facing the second portion 61b of the first conductive film 61.
[0016] The second conductive film 71 contacts the first conductive film 61 and the bonding metal portion 50 between the second metal portion 51b of the bonding metal portion 50 and the second portion 61b of the first conductive film 61. Also, the second conductive film 71 contacts the first conductive film 61 and the bonding metal portion 50 between the side surface of the first metal portion 51a of the bonding metal portion 50 and the first portion 61a of the first conductive film 61.
[0017] Also, for example, the bonding metal part 50 located on the left side in FIG. 1 has a part where the second metal part 51b and the second part 61b of the first conductive film 61 are in direct contact without passing through the second conductive film 71.
[0018] The first conductive film 61 is made of a material different from the materials of the second conductive film 71 and the bonding metal part 50. Here, the material represents the material mainly constituting each member. For example, the bonding metal part 50 mainly contains gold, the first conductive film 61 mainly contains titanium nitride, and the second conductive film 71 mainly contains palladium or titanium. The second conductive film 71 may be a laminated film of a palladium film and a titanium film.
[0019] As will be described later, the second conductive film 71 functions as a seed layer when forming the bonding metal part 50 by electroplating. After depositing the bonding metal part 50, a step of removing the unnecessary part of the second conductive film 71 on the surface 33a of the first insulating layer 33 is performed. For example, if a misalignment occurs in the alignment between the bonding metal part 50 located on the left side in FIG. 1 and the first connection hole 32, the etching solution may penetrate into the first connection hole 32, and a part of the second conductive film 71 in the first connection hole 32 may disappear. In this case, a gap is formed between the first wiring layer 31 and the first metal part 51a of the bonding metal part 50 in the first connection hole 32, and poor conduction or an increase in contact resistance between the first wiring layer 31 and the bonding metal part 50 may occur.
[0020] According to the present embodiment, by pre-forming the first conductive film 61 in contact with the first wiring layer 31 in the first connection hole 32 with a material different from that of the second conductive film 71, the first conductive film 61 in contact with the first wiring layer 31 can be surely left in the first connection hole 32 even after the etching process of the second conductive film 71. Thereby, the first wiring layer 31 can be electrically connected to the bonding metal part 50 through the first conductive film 61. As a result, the reliability of the bonding type wiring member 1 can be improved.
[0021] Furthermore, according to this embodiment, as shown in the joining metal portion 50 located on the left side in Figure 1, the joining metal portion 50 has a portion in which the second metal portion 51b is connected to the first conductive film 61 via the second conductive film 71, and a portion 51b1 in which the second metal portion 51b is in direct contact with the first conductive film 61 without the second conductive film 71. Therefore, the adhesion between the joining metal portion 50 and the first conductive film 61 can be improved, and peeling due to stress on the film itself and thermal stress in subsequent processes can be suppressed.
[0022] The second chip 200 may have a configuration similar to that of the first chip 100. For example, the second chip 200 has a second wiring section 40 laminated on the second substrate 20. The second wiring section 40 is provided on the third surface 21 of the second substrate 20. In the first direction Z, the second wiring section 40 is located between the first wiring section 30 and the second substrate 20. The second wiring section 40 has a second insulating layer 43 and a second wiring layer 41 provided within the second insulating layer 43. The second wiring layer 41 is made of a material mainly containing copper, for example. Figure 1 shows one second wiring layer 41, but the second wiring section 40 may have multiple second wiring layers 41.
[0023] The second insulating layer 43 has a surface 43a facing the first wiring section 30 in the first direction Z. The second wiring section 40 has a second connection hole 42 that extends from the surface 43a of the second insulating layer 43 to the second wiring section 41. The second connection hole 42 has an opening on the surface 43a side of the second insulating layer 43 and a bottom surface on the second wiring section 41 side. The second wiring section 40 has a plurality of second connection holes 42 corresponding to the positions of a plurality of joining metal parts 50, for example. The joining metal parts 50 are provided between the first connection hole 32 and the second connection hole 42 in the first direction Z.
[0024] The second chip 200 is provided in the second connection hole 42 and further has a third conductive film 62 that is in contact with the second wiring layer 41 at the bottom surface of the second connection hole 42. The third conductive film 62 is provided continuously on the surface 43a of the second insulating layer 43, the side surface and the bottom surface of the second connection hole 42. The third conductive film 62 has a third portion 62a located inside the second connection hole 42 and a fourth portion 62b located on the surface 43a of the second insulating layer 43.
[0025] The second chip 200 is provided between the third conductive film 62 and the bonding metal portion 50 and further has a fourth conductive film 72 that is in contact with the third conductive film 62 and the bonding metal portion 50. Multiple fourth conductive films 72 are provided on each of the multiple bonding metal portions 50, separated from one another.
[0026] The bonding metal portion 50 is electrically connected to the second wiring layer 41 via the third conductive film 62 and the fourth conductive film 72. The bonding metal portion 50 has a third metal portion 52a located within the second connection hole 42 and a fourth metal portion 52b facing the fourth portion 62b of the third conductive film 62.
[0027] The fourth conductive film 72 is in contact with the third conductive film 62 and the joining metal part 50 between the fourth metal part 52b of the joining metal part 50 and the fourth portion 62b of the third conductive film 62. In addition, the fourth conductive film 72 is in contact with the third conductive film 62 and the joining metal part 50 between the side surface of the third metal part 52a of the joining metal part 50 and the third portion 62a of the third conductive film 62.
[0028] The first wiring layer 31 of the first chip 100 is electrically connected to the second wiring layer 41 of the second chip 200 via the first conductive film 61, the second conductive film 71, the bonding metal portion 50, the fourth conductive film 72, and the third conductive film 62.
[0029] As will be described later, one jointed metal part 50 is formed by metal diffusion bonding of a first jointed metal part 51 provided on the first tip 100 side and a second jointed metal part 52 provided on the second tip 200 side by applying heat and force.
[0030] Next, the manufacturing method of the joint-type wiring member 1 according to the first embodiment will be described with reference to Figures 2 to 7.
[0031] As shown in Figure 2, a first wiring section 30 is formed on the first surface 11 of the first substrate 10. A first connection hole 32 is formed in the first wiring section 30, extending from the surface 33a of the first insulating layer 33 to the first wiring layer 31. The first connection hole 32 can be formed, for example, by the RIE (Reactive Ion Etching) method. The first connection hole 32 is a bottomed hole with an opening in the surface 33a of the first insulating layer 33.
[0032] After forming the first connection hole 32, a first conductive film 61 is formed inside the first connection hole 32, as shown in Figure 3. The first conductive film 61 can be formed, for example, by a RIE method using a resist mask patterned by lithography after forming a film mainly containing titanium nitride by sputtering. The first conductive film 61 has a first portion 61a provided on the side and bottom surfaces of the first connection hole 32, and a second portion 61b provided on the surface 33a of the first insulating layer 33 around the first connection hole 32.
[0033] After forming the first conductive film 61, a second conductive film 71 is formed inside the first connection hole 32 and on the surface 33a of the first insulating layer 33, as shown in Figure 4. The second conductive film 71 can be formed by sputtering, for example, as a film mainly containing palladium or titanium. The second conductive film 71 continuously covers the first portion 61a of the first conductive film 61 inside the first connection hole 32, the second portion 61b of the first conductive film 61 on the surface 33a of the first insulating layer 33, and the surface 33a of the first insulating layer 33. The second conductive film 71 is in contact with the first portion 61a and the second portion 61b of the first conductive film 61.
[0034] After forming the second conductive film 71, the first bonding metal portion 51 is formed. As shown in Figure 5, the first bonding metal portion 51 is formed as a gold film mainly containing gold by a plating method using a resist mask 91. The second conductive film 71 functions as a seed layer for plating. The first bonding metal portion 51 has a first metal portion 51a located inside the first connection hole 32 and a second metal portion 51b located on the second portion 61b of the first conductive film 61 via the second conductive film 71. The first bonding metal portion 51 is in contact with the second conductive film 71 inside the first connection hole 32 and on the surface 33a of the first insulating layer 33.
[0035] After forming the first bonding metal portion 51, the resist mask 91 is removed. As shown in Figure 6, the removal of the resist mask 91 exposes a portion of the second conductive film 71 that is not covered by the first bonding metal portion 51. In this state, the exposed portion of the second conductive film 71 is removed by wet etching. Since the first bonding metal portion 51 is made of a different material than the second conductive film 71, it functions as a mask during this wet etching process.
[0036] As shown in Figure 7, the second conductive film 71 remains beneath the first joint metal portion 51, while the second conductive film 71 on the surface 33a of the first insulating layer 33 is removed. At this time, since the first conductive film 61 is made of a different material from the second conductive film 71, it has resistance to the wet etching described above. This ensures that the first conductive film 61 in contact with the first wiring layer 31 within the first connection hole 32 remains intact.
[0037] As shown in Figure 5 above, the resist mask 91 is formed over the entire surface of the second conductive film 71, and then patterned by exposure and development processes to form multiple openings 91a in the resist mask 91. The openings 91a are located on the first connection hole 32 and on the second portion 61b of the first conductive film 61. At this time, misalignment of the openings 91a may occur. In Figure 5, the right opening 91a1 shows a state where no misalignment has occurred, while the left opening 91a2 shows a state where its center is shifted to the right of the opening 91a1.
[0038] If a misalignment occurs in the opening 91a2, as shown in Figure 6, a portion 51b1 is formed in the second metal portion 51b of the first joint metal portion 51 formed within the opening 91a2, for example, with a reduced width in the second direction X. During the wet etching described above, the etching of the second conductive film 71 beneath portion 51b1 proceeds rapidly, and the second conductive film 71 is prone to disappearance. When the second conductive film 71 beneath portion 51b1 disappears, a gap is formed between portion 51b1 and the second portion 61b of the first conductive film 61, and the etching solution penetrates into the first connection hole 32 through this gap. As a result, as shown in Figure 7, a portion of the second conductive film 71 within the first connection hole 32 may disappear.
[0039] According to this embodiment, by pre-forming the first conductive film 61 in contact with the first wiring layer 31 within the first connection hole 32 using a different material from the second conductive film 71, the first conductive film 61 in contact with the first wiring layer 31 can be reliably left within the first connection hole 32 even after the etching process of the second conductive film 71. If the opening 91a2 of the resist mask 91 is shifted to the right, the width of the other portion 51b2 (width in the second direction X) extending to the right opposite to portion 51b1 in the second metal portion 51b of the first bonding metal portion 51 becomes larger than the width of portion 51b1 (width in the second direction X). Therefore, the second conductive film 71 can be left between the other portion 51b2 and the second portion 61b of the first conductive film 61. As a result, etching solution does not enter the first connection hole 32 from the other part 51b2 side, and the second conductive film 71 can be left between the first metal part 51a of the first joining metal part 51 and the first part 61a of the first conductive film 61 on the right side of the first connection hole 32. Therefore, even if a misalignment occurs between the first joining metal part 51 and the first connection hole 32, the first wiring layer 31 and the first joining metal part 51 can be electrically connected via the first conductive film 61 and the second conductive film 71 on the side in which the misalignment occurred (the right side in this example).
[0040] The second chip 200 can also be formed by the same process as the first chip 100 described above. In the second chip 200, the third conductive film 62 is made of a different material from the material of the fourth conductive film 72 and the material of the bonding metal part 50. For example, the bonding metal part 50 mainly contains gold, the third conductive film 62 mainly contains titanium nitride, and the fourth conductive film 72 mainly contains palladium or titanium. Therefore, in the second chip 200 as well, the third conductive film 62 that is in contact with the second wiring layer 41 can be reliably left in the second connection hole 42 even after the etching process of the fourth conductive film 72. This makes it possible to electrically connect the second wiring layer 41 to the bonding metal part 50 via the third conductive film 62 and the fourth conductive film 72.
[0041] After forming the first chip 100 and the second chip 200, the first joining metal portion 51 of the first chip 100 and the second joining metal portion 52 of the second chip 200 are brought into contact with each other. Then, heat and force are applied to diffuse the metal (gold in this example) of the first joining metal portion 51 and the second joining metal portion 52, thereby joining the first joining metal portion 51 and the second joining metal portion 52.
[0042] As shown in Figure 7 above, a gap may be formed between portion 51b1 of the first bonding metal part 51 and the second portion 61b of the first conductive film 61. However, due to the pressing force during bonding of the first tip 100 and the second tip 200, as shown in Figure 1, portion 51b1 of the first bonding metal part 51 comes into contact with the second portion 61b of the first conductive film 61, and the gap is closed.
[0043] Due to the pressing force during the joining of the first chip 100 and the second chip 200, the stress on the first conductive film 61 itself formed in the first connection hole 32, and thermal stress in subsequent processes, it is possible that cracks may form, particularly in the corners of the bottom surface of the first connection hole 32 in the first conductive film 61. As mentioned above, even if a gap is formed between the portion 51b1 of the first joining metal part 51 and the second portion 61b of the first conductive film 61, that gap will be closed when the first chip 100 and the second chip 200 are joined. Therefore, heating during the joining of the first chip 100 and the second chip 200 can suppress abnormal oxidation of the first wiring layer 31 through cracks formed in the first conductive film 61.
[0044] [Second Embodiment] Figure 8 is a schematic cross-sectional view of the joint-type wiring member 2 of the second embodiment.
[0045] In the jointed wiring member 2 of the second embodiment, the first substrate 10 has a first through hole 13, and the first wiring section 30 has a first wiring section through hole 35. The first through hole 13 and the first wiring section through hole 35 extend in a first direction Z and are continuous with each other in the first direction Z. The second substrate 20 has a second through hole 23, and the second wiring section 40 has a second wiring section through hole 45. The second through hole 23 and the second wiring section through hole 45 extend in a first direction Z and are continuous with the first wiring section through hole 35 and the first through hole 13 in the first direction Z.
[0046] A charged particle beam, for example, passes through the second through-hole 23, the second wiring section through-hole 45, the first wiring section through-hole 35, and the first through-hole 13. By joining two chips (first chip 100 and second chip 200), each having a through-hole, a joined wiring member 2 can be constructed that has deep through-holes that would be difficult to form with a single chip.
[0047] The jointed wiring member 2 further comprises a fifth conductive film 81 provided on the side surface of the first wiring through hole 35 and a sixth conductive film 82 provided on the side surface of the second wiring through hole 45.
[0048] The side surface of the first wiring section through-hole 35 is covered with the fifth conductive film 81, and the first insulating layer 33 of the first wiring section 30 is not exposed on the side surface of the first wiring section through-hole 35. The side surface of the second wiring section through-hole 45 is covered with the sixth conductive film 82, and the second insulating layer 43 of the second wiring section 40 is not exposed on the side surface of the second wiring section through-hole 45. This suppresses moisture absorption to the side surfaces of the first insulating layer 33 and the second insulating layer 43 under the usage environment, during preparation for use, or during storage of the bonded wiring member 2, and suppresses oxidation of the first wiring layer 31 and the second wiring layer 41. As a result, the reliability of the bonded wiring member 2 can be improved.
[0049] Furthermore, the fifth conductive film 81 and the sixth conductive film 82 suppress charging on the side surfaces of the first insulating layer 33 and the second insulating layer 43, thereby suppressing abnormal deflection of the charged particle beam.
[0050] The fifth conductive film 81 can be formed continuously with the first conductive film 61 using the same material as the first conductive film 61 when the first conductive film 61 is formed. The sixth conductive film 82 can be formed continuously with the third conductive film 62 using the same material as the third conductive film 62 when the third conductive film 62 is formed.
[0051] [Third Embodiment] Figure 9 is a schematic cross-sectional view of the joint-type wiring member 3 of the third embodiment.
[0052] The first chip 100 and the second chip 300 are joined together via a bonding metal portion 50. The second chip 300 has a second substrate 20. The wiring portion is laminated only on the first substrate 10 of the first chip 100, and not on the second substrate 20 of the second chip 300. The second substrate 20 has a first wiring portion through hole 35 and a second through hole 23 that is continuous with the first through hole 13. A second bonding metal portion 52 is provided on the third surface 21 of the second substrate 20.
[0053] A first electrode film 83 and a second electrode film 84 are provided on the side surface of the second through-hole 23 of the second substrate 20. The first electrode film 83 and the second electrode film 84 are separated and facing each other in the second direction X, and are not connected within the second through-hole 23.
[0054] The lower ends of the first electrode film 83 and the second electrode film 84 are connected to the second bonding metal portion 52. The first electrode film 83 and the second electrode film 84 are each electrically connected to the first wiring layer 31 via the bonding metal portion 50, the second conductive film 71, and the first conductive film 61. The first wiring layer 31 electrically connected to the first electrode film 83 and the first wiring layer 31 electrically connected to the second electrode film 84 are not electrically connected, allowing different potentials to be applied to the first electrode film 83 and the second electrode film 84. This allows the charged particle beam passing through the second through-hole 23 to be deflected.
[0055] If the second substrate 20 is conductive, such as a silicon substrate, an insulating film 85 is provided between the first electrode film 83 and the second substrate 20, and between the second electrode film 84 and the second substrate 20. If the second substrate 20 is an insulating substrate, the first electrode film 83 and the second electrode film 84 may be formed directly on the second substrate 20.
[0056] Figure 10 is a schematic plan view showing an example of the arrangement of the surface 33a of the first insulating layer 33 and the bonding metal part 50 in the first chip 100.
[0057] For example, multiple bonding metal parts 50 are arranged side by side in a second direction X and a third direction Y. Multiple second conductive films 71 are separated from each other and provided beneath each of the multiple bonding metal parts 50.
[0058] The first conductive film 61 electrically connects multiple bonding metal parts 50 via the second conductive film 71. In the example shown in Figure 10, the first conductive film 61 is formed continuously between adjacent bonding metal parts 50 in the third direction Y, electrically connecting adjacent bonding metal parts 50 in the third direction Y. Alternatively, the first conductive film 61 may be formed continuously between adjacent bonding metal parts 50 in the second direction X, electrically connecting adjacent bonding metal parts 50 in the second direction X.
[0059] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]
[0060] 1-3…Bonded wiring member, 10…First substrate, 13…First through hole, 20…Second substrate, 23…Second through hole, 30…First wiring section, 31…First wiring layer, 32…First connection hole, 33…First insulating layer, 35…First wiring section through hole, 40…Second wiring section, 41…Second wiring layer, 42…Second connection hole, 43…Second insulating layer, 45…Second wiring section through hole, 50…Bonding metal section, 51…First bonding metal section, 52…First bonding metal section, 61…First conductive film, 62…Third conductive film, 71…Second conductive film, 72…Fourth conductive film, 81…Fifth conductive film, 82…Sixth conductive film, 83…First electrode film, 84…Second electrode film, 100…First chip, 200…Second chip, 300…Second chip
Claims
1. First substrate and A first wiring portion is laminated on the first substrate and has a first insulating layer, a first wiring layer provided within the first insulating layer, and a first connection hole reaching from the surface of the first insulating layer to the first wiring layer. A second substrate facing the first wiring portion in the first direction, A bonding metal portion provided between the first connection hole and the second substrate in the first direction, A first conductive film provided in the first connection hole and in contact with the first wiring layer at the bottom surface of the first connection hole, A second conductive film is provided between the first conductive film and the bonding metal portion, and is in contact with the first conductive film and the bonding metal portion. Equipped with, The first conductive film is made of a material different from the material of the second conductive film and the material of the bonding metal part. The first conductive film has a first portion located within the first connection hole and a second portion located on the surface of the first insulating layer. The joining metal portion has a first metal portion located within the first connection hole and a second metal portion facing the second portion of the first conductive film. A joint-type wiring member in which the width of the second portion of the first conductive film is greater than the width of the portion of the second conductive film located on the surface of the first insulating layer and the width of the second metal portion of the joint metal portion.
2. The joint-type wiring member according to claim 1, wherein the second conductive film is in contact with the first conductive film and the joint metal portion between the second metal portion and the second portion.
3. The joint-type wiring member according to claim 1, wherein the second conductive film is in contact with the first conductive film and the joint metal portion between the side surface of the first metal portion and the first portion.
4. The joining metal portion has a portion in which the second metal portion and the second portion are in direct contact, as described in any one of claims 1 to 3.
5. Multiple of the aforementioned joining metal parts are arranged in a direction perpendicular to the first direction, Multiple of the second conductive films are separated from each other and provided beneath each of the multiple bonding metal parts. The joint-type wiring member according to any one of claims 1 to 3, wherein the first conductive film electrically connects the plurality of joint metal parts via the second conductive film.
6. The second wiring portion is laminated on the second substrate, located between the first wiring portion and the second substrate in the first direction, and has a second insulating layer, a second wiring layer provided within the second insulating layer, and a second connection hole extending from the surface of the second insulating layer to the second wiring layer. A third conductive film is provided in the second connection hole and is in contact with the second wiring layer at the bottom surface of the second connection hole, A fourth conductive film is provided between the third conductive film and the bonding metal portion, and is in contact with the third conductive film and the bonding metal portion. Furthermore, The bonded wiring member according to any one of claims 1 to 3, wherein the third conductive film is made of a material different from the material of the fourth conductive film and the material of the bonded metal part.
7. The first substrate has a first through hole, The first wiring section has a first wiring section through-hole that is continuous with the first through-hole in the first direction, The joint-type wiring member according to claim 1, wherein the second substrate has a through hole for the first wiring portion and a second through hole continuous with the first through hole in the first direction.
8. The bonded wiring member according to claim 7, further comprising a fifth conductive film provided on the side surface of the first wiring through-hole.
9. The bonded wiring member according to claim 7 or 8, further comprising an electrode film provided on the side surface of the second through-hole and electrically connected to the first wiring layer via the first conductive film, the second conductive film, and the bonding metal portion.
10. The aforementioned joined metal part mainly contains gold, The first conductive film mainly contains titanium nitride, The junction-type wiring member according to any one of claims 1 to 3, wherein the second conductive film mainly comprises palladium, titanium, or a laminated film of a palladium film and a titanium film.