Stabilized voltage generation circuit and semiconductor device

Abstract

Provided is a stabilized voltage generation circuit capable of generating a highly accurate output voltage over a wide temperature range.　The stabilized voltage generation circuit (10) comprises: a first voltage generation circuit (110) configured to generate a first voltage (VT2) having a positive temperature characteristic; and a second voltage generation circuit (120) that has a first MOSFET (121) having a gate of a first conductivity type and a second MOSFET (122) having a gate of a second conductivity type different from the first conductivity type, and is configured to generate a second voltage (ΔVTH) having a negative temperature characteristic on the basis of the difference in gate threshold voltage between the first MOSFET (121) and the second MOSFET (122), wherein an output voltage (VREFOUT) is generated on the basis of the sum voltage (VT2+ΔVTH) of the first voltage and the second voltage.

Claims

1. A first voltage generation circuit configured to generate a first voltage having a positive temperature characteristic, A second voltage generation circuit comprising a first MOSFET having a gate of a first conductivity type and a second MOSFET having a gate of a second conductivity type different from the first conductivity type, and configured to generate a second voltage having a negative temperature characteristic based on the difference in gate threshold voltage between the first MOSFET and the second MOSFET, An output voltage line, a startup circuit connected to the first voltage generation circuit and the second voltage generation circuit, A power source circuit is provided between the internal power supply voltage application line and the output voltage line, and is configured to supply a drive current corresponding to the internal voltage to the startup circuit, the first voltage generation circuit and the second voltage generation circuit through the output voltage line, Based on the current supplied from the power source circuit to the startup circuit, the startup circuit starts the first voltage generation circuit and the second voltage generation circuit. Then, the sum of the first voltage and the second voltage is increased by a variable ratio to generate an output voltage on the output voltage line, and the first voltage generation circuit and the second voltage generation circuit operate using the voltage on the output voltage line as the power supply voltage. , a voltage stabilization circuit.

2. The first voltage generation circuit comprises a group of P-channel type MOSFETs having gates connected to a specific node, The second voltage generation circuit comprises a group of P-channel type MOSFETs having gates connected to the specific node, The startup circuit has a startup transistor connected between the specific node and ground. Based on the current supplied from the power source circuit to the startup circuit, the startup transistor is turned on to lower the potential of the specific node, thereby starting the first voltage generation circuit and the second voltage generation circuit by transitioning them to a state where current flows through their respective MOSFET groups. The stabilized voltage generation circuit according to claim 1.

3. The output adjustment circuit further comprises a series circuit of a plurality of resistors provided between the output voltage line and ground, The sum voltage is applied to the connection nodes between the plurality of resistors, The aforementioned plurality of resistors include a variable resistor for output adjustment, The ratio changes as the resistance value of the variable resistor for output adjustment changes. The stabilized voltage generation circuit according to claim 2.

4. In the second voltage generation circuit, the sources of the first MOSFET and the second MOSFET are connected in common, and when currents of the same magnitude are supplied to the first MOSFET and the second MOSFET, the difference between the gate potential of the first MOSFET and the gate potential of the second MOSFET is generated as the second voltage. A stabilized voltage generation circuit according to any one of claims 1 to 3.

5. The first voltage is supplied to the gate of the first MOSFET, and the sum voltage is generated at the gate of the second MOSFET. The stabilized voltage generation circuit according to claim 4.

6. The first voltage generation circuit generates the first voltage using two MOSFETs operating at different current densities. A stabilized voltage generation circuit according to any one of claims 1 to 5.

7. The first voltage generation circuit is configured to allow adjustment of the temperature coefficient of the first voltage using a variable resistor for temperature coefficient adjustment. The stabilized voltage generation circuit according to claim 6.

8. The two MOSFETs mentioned above operate in the subthreshold region. , the stabilized voltage generation circuit according to claim 6 or 7.

9. The first MOSFET and the second MOSFET operate in the subthreshold region. A stabilized voltage generation circuit according to any one of claims 1 to 8.

10. A stabilized voltage generation circuit according to any one of claims 1 to 9, The system includes a functional circuit configured to perform a predetermined operation using the output voltage generated by the stabilized voltage generation circuit as a reference voltage. Semiconductor equipment.

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