High-speed gas exchange using a mass flow controller

Abstract

[0006] Several embodiments of a fast gas exchange (FGE) manifold are provided herein. In some embodiments, the FGE manifold includes a manifold housing having a plurality of inlets and a plurality of outlets for flowing a plurality of process gases through the manifold housing, the plurality of outlets corresponding to a plurality of zones in a process chamber, a plurality of hybrid valves disposed within the manifold housing and fluidly coupled to the plurality of inlets, a plurality of mass flow controllers disposed within the manifold housing downstream of the plurality of hybrid valves, a plurality of mixing lines extending downstream from the plurality of mass flow controllers to a plurality of outlet lines, and a plurality of outlet valves disposed along corresponding ones of the plurality of outlet lines, wherein a flow path is defined between each inlet of the plurality of inlets and each outlet of the plurality of outlets.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to a substrate processing apparatus.

Background Art

[0002]

[0002] The manufacture of microelectronic devices involves many different stages, each including various processes. At one stage, a particular process may apply plasma to the surface of a substrate, such as a silicon substrate, to change the physical and material properties of the substrate. Such a process is known as etching and may include removing material to form holes, vias, and / or other openings (referred to herein as "trenches") in the substrate. A deposition process includes depositing material on the substrate. In certain processes that apply etching to form deep trenches, deposition and etching steps may be repeated alternately to achieve high aspect ratio etching. The deposition and etching steps use different chemical reactions, and the interval between process switching times is short (about 0.5 seconds). By adopting the fast gas exchange (FGE) concept in a substrate processing apparatus, the chemical reactions of the deposition process and the etching process can be switched at short time intervals. The FGE is disposed in front of the chamber of the processing apparatus and enhances the responsiveness of the system by reducing the dead volume.

[0003]

[0003] Conventional FGEs use a mass flow controller in the gas panel for flow rate control and an on / off valve to control the gas flow in a desired region of the chamber. Such conventional FGEs can handle two gases that are always flowing on the gas panel side, and the on / off valve controls the flow of each gas to either the central region of the chamber, an intermediate region, or the discharge (foreline). Such FGEs have limitations in handling two gases and result in a lot of gas waste because the gas is always flowing and being discharged. Therefore, the inventors provide herein several embodiments of an improved FGE. [Overview of the Initiative]

[0004]

[0004] Multiple embodiments of fast gas exchange (FGE) manifolds are provided herein. In some embodiments, an FGE manifold for a process chamber is a manifold housing having a plurality of inlets and a plurality of outlets for passing a plurality of process gases through the manifold housing, wherein the plurality of outlets correspond to a plurality of zones in the process chamber; a plurality of hybrid valves disposed within the manifold housing and fluid-coupled to the plurality of inlets; a plurality of mass flow controllers disposed within the manifold housing downstream of the plurality of hybrid valves, each of the plurality of hybrid valves being associated with one or two of the mass flow controllers, and each mass flow controller being associated with one of the plurality of zones; a plurality of mixing lines extending downstream from the plurality of mass flow controllers to a plurality of outlet lines corresponding to a plurality of outlets, wherein the plurality of mixing lines associated with each of the plurality of zones are fluid-coupled to one of the plurality of outlets; and a plurality of outlet valves disposed along the corresponding outlet lines, wherein a flow path is defined between each inlet of the plurality of inlets and each outlet of the plurality of outlets, and each flow path includes one or more of the plurality of hybrid valves and one or more of the plurality of mass flow controllers.

[0005]

[0005] In some embodiments, a high-speed gas exchange system for a process chamber includes a high-speed gas exchange manifold, the high-speed gas exchange manifold comprising: a manifold housing having a plurality of inlets and a plurality of outlets for passing a plurality of process gases through the manifold housing; a plurality of mass flow controllers coupled to the manifold housing and configured to pass corresponding of the plurality of process gases to a plurality of zones of the process chamber, the mass flow controllers positioned between the plurality of inlets and a plurality of outlets; a plurality of hybrid valves coupled to the manifold housing and positioned upstream from the plurality of mass flow controllers; and a plurality of mixing lines extending downstream from the plurality of mass flow controllers to a plurality of outlet lines corresponding to the plurality of outlets, the high-speed gas exchange system for a process chamber further comprises a gas panel having a plurality of gas sources for supplying the plurality of process gases; and gas supply lines extending from the plurality of gas sources to the high-speed gas exchange manifold, each of which includes a control valve.

[0006]

[0006] In some embodiments, the substrate processing apparatus includes a process chamber having an internal space located inside, the process chamber comprising a plurality of zones, and a high-speed gas exchange manifold, the high-speed gas exchange manifold comprising a manifold housing having a plurality of inlets and a plurality of outlets for passing a plurality of process gases through the manifold, the plurality of outlets corresponding to the plurality of zones, a plurality of hybrid valves located within the manifold housing and fluid-coupled to the plurality of inlets, a plurality of mass flow controllers located within the manifold housing downstream of the plurality of hybrid valves and each of the plurality of hybrid valves is associated with one or two of the mass flow controllers, and each mass flow controller is associated with one of the plurality of zones, a plurality of mixing lines extending downstream from the plurality of mass flow controllers to a plurality of outlet lines corresponding to the plurality of outlets, the plurality of mixing lines associated with each of the plurality of zones being fluid-coupled to one of the plurality of outlets, and a plurality of outlet valves located along the corresponding of the plurality of outlet lines, wherein a flow path is defined between each inlet of the plurality of inlets and each outlet of the plurality of outlets, and each flow path comprises one or more of the plurality of hybrid valves and one or more of the plurality of mass flow controllers, and a plurality of outlet valves.

[0007]

[0007] Other and further embodiments of the present disclosure are described below.

[0008]

[0008] Embodiments of the present disclosure, which are briefly summarized above and described in more detail below, can be understood by referring to exemplary embodiments of the present disclosure shown in the accompanying drawings. However, since the present disclosure may allow for other equally valid embodiments, the accompanying drawings show only typical embodiments of the present disclosure and should not be considered limiting in scope. [Brief explanation of the drawing]

[0009] [Figure 1]

[0009] A schematic diagram of a high-speed gas exchange system for a process chamber according to at least some embodiments of the present disclosure is shown. [Figure 2A]

[0010] A schematic diagram of a high-speed gas exchange manifold for a process chamber showing a flow path for a first process gas, according to at least some embodiments of the present disclosure, is shown. [Figure 2B]

[0011] This is a schematic diagram of a high-speed gas exchange manifold for a process chamber showing a flow path for a second process gas, according to at least some embodiments of the present disclosure. [Figure 3]

[0012] A schematic diagram of a high-speed gas exchange manifold for a process chamber showing flow paths for a first process gas and a second process gas, according to at least some embodiments of the present disclosure, is shown. [Figure 4]

[0013] A schematic diagram of a substrate processing apparatus according to at least some embodiments of the present disclosure is shown. [Figure 5]

[0014] An isometric schematic diagram of a high-speed gas exchange manifold according to at least some embodiments of the present disclosure is shown. [Figure 6]

[0015] A simplified isometric schematic diagram of a high-speed gas exchange manifold according to at least some embodiments of the present disclosure is shown. [Figure 7]

[0016] A schematic diagram of a high-speed gas exchange system having a process chamber with multiple zones, according to at least some embodiments of the present disclosure, is shown. [Modes for carrying out the invention]

[0010]

[0017] For ease of understanding, the same reference numerals have been used to indicate identical elements common to the figures where possible. The figures are not to scale and may be simplified for clarity. Elements and features of one embodiment may be usefully incorporated into other embodiments without further description.

[0011]

[0018] Multiple embodiments of fast gas exchange (FGE) systems are provided herein. The FGE system of the present invention comprises an FGE manifold including multiple mass flow controllers (MFCs) having rapid response. In some embodiments, the rapid response corresponds to a speed of about 0.1 to about 1 second. The MFCs may be dedicated to each process gas, or the MFCs may be shared for multiple process gases. The FGE manifold is advantageously positioned or coupled to the process chamber to reduce the gas travel distance and thus enable faster switching. By being modular, the FGE system of the present invention is advantageously able to supply two or more gases to the process chamber. The FGE system is advantageously able to eliminate gas waste by discharging process gases to the foreline.

[0012]

[0019] Figure 1 shows a schematic diagram of a fast gas exchange (FGE) system 100 for a process chamber according to at least some embodiments of the present disclosure. The FGE system 100 generally includes a gas panel 104 coupled to an FGE manifold 102 for supplying process gas to a process chamber 108. The process chamber 108 may be any process chamber suitable for performing an etching or deposition process on a substrate. The process chamber 108 has a chamber body 122 that defines an internal space 116. The process chamber 108 includes a plurality of zones 112 to which gas is supplied. In some embodiments, as shown in Figure 1, the plurality of zones 112 include a central zone 112A and an outer zone 112B. In some embodiments, the process chamber 108 includes a shower head 115 for supplying process gas to the internal space 116. In some embodiments, the shower head 115 defines a plurality of zones. In some embodiments, the process chamber 108 may include three or more zones, for example, a central zone 112A, an outer zone 112B, and an edge zone 112C, as shown in Figure 7. In some embodiments, the three or more zones may include a side zone 112D.

[0013]

[0020] The gas panel 104 generally includes multiple gas sources 128 for supplying multiple process gases, and includes associated flow control valves and lines. In some embodiments, the multiple gas sources 128 include four gas sources 128A to D, each containing three or more gas sources, for example, gas A, gas B, gas C, and gas D. Gases A to D may be any combination of compatible gases. For example, in some embodiments, the first gas source 128A contains a suitable etchant gas. In some embodiments, the second gas source 128B contains a suitable deposit gas, such as carbon fluoride. In some embodiments, the third gas source 128C contains a suitable reaction gas. In some embodiments, the fourth gas source 128D contains a suitable inert gas.

[0014]

[0021] The associated flow control valves and lines of the gas panel 104 include gas supply lines 130 extending from a plurality of gas sources 128 to the FGE manifold 106. Each of the gas supply lines 130 may include a control valve 132 with an on / off valve for controlling the flow of the plurality of gas sources 128 to the FGE manifold 106. The gas panel 104 may further include bypass lines 126 coupled to each of the gas supply lines 130 via line 134. A second control valve 138 is positioned along each of the lines 134 to start or stop the flow of each respective process gas through the bypass lines 126. In some embodiments, the gas panel 104 does not include any mass flow controller.

[0015]

[0022] The bypass line 126 is configured to supply any of the process gases from multiple gas sources 128 to the process chamber 108 when high-speed switching of any of the process gases is not required for a particular application. In some embodiments, the bypass line 126 is coupled to a flow ratio controller 140. The flow ratio controller 140 divides the flow from the bypass line 126 into multiple supply lines 142 corresponding to multiple zones 112 in a desired ratio. The flow ratio controller 140 and the multiple supply lines 142 are located outside the FGE manifold 106 and are therefore unsuitable for providing high-speed gas switching.

[0016]

[0023] The FGE manifold 106 generally includes a manifold housing 125 having multiple inlets 110 and multiple outlets 120 for flowing multiple process gases from the gas panel 104 through the manifold housing 125. The multiple outlets 120 correspond to multiple zones 112 within the process chamber 108. For example, Figure 1 shows a process chamber 108 having two zones and a manifold housing 125 having two outlets. The multiple inlets 110 are fluid-coupled to multiple mass flow controllers (MFCs) 144. The multiple mass flow controllers (MFCs) 144 are then fluid-coupled to each of the multiple outlets 120. The multiple MFCs 144 are coupled to the manifold housing 125 and configured to flow corresponding process gases from the multiple process gases into the multiple zones 112 of the process chamber 108.

[0017]

[0024] In some embodiments, the FGE manifold 102 includes a plurality of hybrid valves 150 located within or coupled to the manifold housing 125 between a plurality of MFCs 144 and a plurality of inlets 110. In some embodiments, the plurality of hybrid valves 150 include gas pressure on / off valves or manual on / off valves. The plurality of hybrid valves 150 (e.g., hybrid valves 150A to 150F) may be provided upstream of the plurality of MFCs 144 for maintenance and backup. The plurality of hybrid valves 150 are fluid-coupled to the plurality of inlets 110 via a plurality of first inlet lines 160. The plurality of hybrid valves 150 are fluid-coupled to the plurality of MFCs 144 via a plurality of second inlet lines 162. In some embodiments, each of the plurality of hybrid valves 150 is associated with one or two of the MFCs 144. For example, in some embodiments, a second inlet line 162 extends from each of the multiple hybrid valves 150 to two of the multiple MFCs 144. The multiple hybrid valves 150 can be opened and closed at any time, for example, during maintenance. In some embodiments, each of the multiple hybrid valves 150 is associated with only one or two of the MFCs 144.

[0018]

[0025] A plurality of MFCs 144 are arranged downstream of the plurality of hybrid valves 150, and each MFC is associated with one of the plurality of zones 112. In some embodiments, each of the plurality of MFCs 144 is configured to flow a single one of the plurality of process gases (to be described in more detail below with reference to FIGS. 2A and 2B). In some embodiments, at least some of the plurality of MFCs 144 are configured to flow a plurality of the plurality of process gases through the plurality of MFCs 144 (to be described in more detail below with reference to FIG. 3). In some embodiments, each MFC is associated with only one of the plurality of zones 112. In some embodiments, the plurality of MFCs 144 have a response speed of from about 0.1 to about 1 second. In some embodiments, the plurality of MFCs 144 have a response speed of from about 0.1 to about 0.4 seconds. In some embodiments, as shown in FIG. 1, the plurality of zones 112 consist of two zones, and the plurality of MFCs 144 consist of eight MFCs (e.g., MFCs 144A to 144H).

[0019]

[0026] In some embodiments, an ALD valve 154 including a gas pressure on / off valve can be provided upstream of the plurality of MFCs 144 for backup, gas switching, and / or flow direction control of the plurality of MFCs as described herein. The plurality of ALD valves 154 (e.g., ALD valves 154A to 154F) are generally fast-switching valves with a response time of less than about 200 milliseconds, such as less than 50 milliseconds, or less than 20 milliseconds. In some embodiments, the plurality of ALD valves 154 are arranged within the manifold housing 125, downstream of the plurality of hybrid valves 150 and between the plurality of hybrid valves 150 and the plurality of MFCs 144. In other embodiments, the plurality of hybrid valves 150 can be arranged between the plurality of ALD valves 154 and the plurality of MFCs 144.

[0020]

[0027] A plurality of mixing lines 170 are disposed within the FGE manifold 106 and extend downstream from a plurality of MFCs 144 to a plurality of outlet lines 168 corresponding to a plurality of outlets 120. For example, the first mixing line 170A may cover the first outlet line 168A. The first outlet line 168A is coupled to a first outlet of a plurality of outlet lines 120 that extend to the outer zone 112B. The second mixing line 170B may cover the second outlet line 168B. The second outlet line 168B is coupled to a second outlet of a plurality of outlet lines 120 that extend to the central zone 112A.

[0021]

[0028] In some embodiments, a plurality of outlet valves 172 are disposed along corresponding ones of the plurality of outlet lines 168. In some embodiments, the plurality of outlet valves 172 are normally closed. The plurality of outlet valves 172 can be high-speed switching valves with a response time of less than about 500 milliseconds. In some embodiments, each of the plurality of outlet lines 168 includes a pressure sensor 174 for measuring line pressure to specify the flow rate and flow velocity of the fluid passing through each of the plurality of outlet lines 168.

[0022]

[0029] In some embodiments, a plurality of supply lines 142 can be coupled to corresponding ones of the plurality of outlet lines 168 for flowing process gas from the bypass line 126. In some embodiments, a bypass valve 180 is disposed along the plurality of supply lines 142 to control the flow rate to the plurality of outlet lines 168 provided by the flow rate ratio controller 140. In some embodiments, the plurality of bypass valves 180 are disposed within the FGE manifold 106 or coupled to the FGE manifold 106. In some embodiments, the plurality of bypass valves 180 are valves of a similar or the same type as the plurality of outlet valves 172.

[0023]

[0030] During use, the flow paths for the multiple process gases from the multiple gas sources 128 generally extend from the multiple inlets 110, through the multiple hybrid valves 150, through the multiple MFCs 144, through the multiple mixing lines 170, through the multiple outlet valves 172, and through the multiple outlets 120 to each of the multiple zones 112 of the process chamber 108. The multiple hybrid valves 150 may be open at all times. Thereafter, the multiple MFCs 144 specify the respective flow rates of process gas supplied to each supply zone at desired intervals. In some embodiments, the multiple hybrid valves 150, or the multiple ALD valves 154, may be selectively opened and closed to assist in controlling the direction of flow when multiple of the multiple gas sources 128 are configured to flow through the same MFC among the multiple MFCs 144 (see, for example, Figure 3).

[0024]

[0031] The FGE system 100 may include a controller 190 that controls the FGE system 100 using direct or indirect control via another computer (or controller) associated with the process chamber 108, FGE manifold 106, gas panel 104, or flow ratio controller 140. During operation, the controller 190 enables data acquisition and feedback from the FGE system 100 to control and optimize the performance of the FGE system 100. For example, the controller 190 may be configured to receive a process recipe for processing a substrate in the process chamber 108 and to independently control the flow of process gas to the process chamber 108 (i.e., from the gas panel 104) at a desired amount, composition, duration, and location. The controller 190 generally includes a central processing unit (CPU) 192, memory 194, and support circuitry 196. The CPU 192 may be any form of a general-purpose computer processor that can be used in an industrial setting. The support circuitry 196 may be conventionally coupled to the CPU 192 and include a cache, clock circuitry, input / output subsystems, power supply, etc. Software routines, such as those described below, may be stored in memory 194 and, when executed by the CPU 192, may be converted to a dedicated computer (controller 190). The software routines may be further stored and / or executed by a second controller (not shown) located remotely from the processing chamber 108.

[0025]

[0032] Memory 194 is a form of computer-readable storage medium containing instructions, which, when executed by the CPU 192, facilitates the operation of the FGE system 100. The instructions in memory 194 are in the form of a program product, such as a program, that implements the method of the present principle. The program code may be adapted to one of several different programming languages. In one embodiment, the present disclosure may be implemented as a program product stored in a computer-readable storage medium used with a computer system. One or more programs in the program product define functions of several aspects (including the methods described herein). Exemplary computer-readable storage media include, but are not limited to, non-write storage media in which information is permanently stored (e.g., read-only memory devices in a computer, such as a CD-ROM drive, flash memory, ROM chip, or CD-ROM disk readable by any type of solid-state non-volatile semiconductor memory) and writable storage media in which modifiable information is stored (e.g., a floppy disk in a diskette drive or hard disk drive or any type of solid-state random-access semiconductor memory). Such a computer-readable storage medium can be any of the embodiments of the present principle when it carries computer-readable instructions that instruct the function of the method described herein and the use of the FGE system 100.

[0026]

[0033] Figure 2A shows a schematic diagram of a high-speed gas exchange manifold 106 for a process chamber showing a flow path for a first process gas, according to at least some embodiments of the present disclosure. The first process gas may be a gas located in a first gas source 128A. Figure 2B shows a schematic diagram of a high-speed gas exchange manifold for a process chamber showing a flow path for a second process gas, according to at least some embodiments of the present disclosure. In some embodiments of Figures 2A and 2B, each of the multiple MFCs 144 is dedicated to a single process gas, or in other words, process gases from multiple gas sources 128 do not share any of the MFCs.

[0027]

[0034] As shown in Figure 2A, the first process gas is supplied to the central zone 112A via channel 210 and to the outer zone 112B via channel 204. Channels 210 and 204 may branch from a junction 206 located between the hybrid valve 150A and the MFC 144A. Channel 204 extends from the junction 206 to the outer zone 112B through the MFC 144A, the first mixing line 170A, and the first outlet line 168A. Channel 210 extends from the junction 206 to the central zone 112A through the MFC 144B, the second mixing line 170B, and the second outlet line 168B.

[0028]

[0035] The second process gas may be a gas located in the second gas source 128B. As shown in Figure 2B, the second process gas is supplied to the central zone 112A via channel 230 and to the outer zone 112B via channel 220. Channels 220 and 230 may branch from a junction 216 located between the hybrid valve 150C and the MFC 144C. Channel 220 extends from the junction 216 to the outer zone 112B through the MFC 144C, the first mixing line 170A, and the first outlet line 168A. Channel 230 extends from the junction 216 to the central zone 112A through the MFC 144D, the second mixing line 170B, and the second outlet line 168B. At least one of the ALD valve 154B or the hybrid valve 150B is closed. As a result, all of the second process gas is directed towards MFC144C and not towards MFC144B, thus maintaining the second process gas and the first process gas separated upstream from the multiple MFC144s.

[0029]

[0036] Figure 3 shows a schematic diagram of a high-speed gas exchange manifold for a process chamber showing flow paths for a first process gas and a second process gas, according to at least some embodiments of the present disclosure. Flow paths for multiple of the multiple gas sources 128 may pass through the same MFC. For example, as shown in Figure 3, the flow path to the central zone 112A for the first gas source 128A and the second gas source 128B may be shared by passing through the MFC 144B. Similarly, in the same embodiment, the flow path to the outer zone 112B for the second gas source 128B and the third gas source 128C may be shared by passing through the MFC 144C. By passing multiple process gases through the same MFC, several MFCs within the FGE manifold 106 can be advantageously reduced, leading to a smaller footprint, less complexity, and greater cost savings.

[0030]

[0037] In the shared configuration shown in Figure 3, a first flow path 302 extends from the first gas source 128A through the hybrid valve 150A, the ALD valve 154A, and the MFC 144A to the first mixing line 170A and the outer zone 112B. A second flow path 304 from the first gas source 128A to the central zone 112A extends through the hybrid valve 150A, the ALD valve 154A, the MFC 144B, and the second mixing line 170B. In some embodiments, the ALD valve 154B may be closed when the first process gas is flowing through the MFC 144B. A third flow path 306 extends from the second gas source 128B through the hybrid valve 150B, the ALD valve 154B, and the MFC 144B to the second mixing line 170B. In some embodiments, the ALD valve 154A may be closed when the second process gas is flowing through the MFC 144B. The fourth flow path 310 extends from the second gas source 128B through the hybrid valve 150C, the ALD valve 154C, and the MFC 144C to the first mixing line 170A. Thus, three of the multiple MFCs 144 may be configured to supply two separate process gases to two zones of the process chamber 108.

[0031]

[0038] Figure 4 shows a schematic diagram of a substrate processing apparatus according to at least some embodiments of the present disclosure. In some embodiments, the FGE manifold 102 is a relatively compact design, as shown in Figure 4, and does not include multiple ALD valves 154 to provide a relatively simplified design in order to reduce cost and software complexity. In some embodiments, multiple second inlet lines 162 extend from each hybrid valve of multiple hybrid valves 150 to two of multiple MFCs 144. In such an arrangement, each of the multiple MFCs 144 is dedicated to a single process gas (i.e., an MFC not shared among multiple process gases).

[0032]

[0039] Figure 5 shows an isometric schematic view of a high-speed gas exchange manifold 106 according to at least some embodiments of the present disclosure. In some embodiments, the manifold housing 125 comprises a base plate 510. In some embodiments, a plurality of MFCs 144 are coupled to the upper surface 502 of the base plate 510. In some embodiments, a plurality of hybrid valves 150 are coupled to the upper surface 502. In some embodiments, an ALD valve 154 is coupled to the upper surface 502. In some embodiments, a bypass valve 180 is coupled to the upper surface 502. In some embodiments, a plurality of outlet valves are coupled to the upper surface 502. The plurality of MFCs 144, the plurality of hybrid valves 150, and the plurality of ALD valves 154 can be arranged and coupled to the base plate 510 in any suitable manner.

[0033]

[0040] In some embodiments, the base plate 510 includes a step 506 such that valves and controllers coupled to the upper surface 502 are arranged along two separate horizontal planes H1 and H2. In some embodiments, the fluid lines of the FGE manifold 106, e.g., a mixing line 170, a plurality of first inlet lines 160, a plurality of second inlet lines 162, and a plurality of outlet lines 168, each include conduits connecting the respective valves to the MFC. In some embodiments, the base plate 510 may be coupled to the chamber body 122 of the process chamber 108.

[0034]

[0041] In some embodiments, as shown in Figure 6, the fluid lines of the FGE manifold 106 may be formed within the base plate 510 of the manifold housing 125. Figure 6 shows a simplified isometric schematic of a fast gas exchange manifold according to at least some embodiments of the present disclosure. Many of the valves and MFCs are omitted in Figure 6 for clarity. In some embodiments, the manifold housing 125 includes channels 620 formed within the manifold housing 125. The channels 620 fluid-couple, for example, a plurality of inlets 110 to a plurality of MFCs 144. The channels 620 formed within the manifold housing 125 may fluid-couple the plurality of MFCs 144 to a plurality of hybrid valves 150 and a plurality of ALD valves. The channels 620 may be formed by perforating the base plate 510 or by other suitable machining methods.

[0035]

[0042] In some embodiments, a cover plate 612 is bonded to the outer surface 618 of the manifold housing 125 at the perforation location to define and seal the channel 620. The channel 620 may extend to the outer surface 618 of the base plate 510 at various angles, orthogonal, or non-orthogonal, as needed, to prevent interference between the channels 620. The design of the manifold housing 125 is advantageously simplified by using the channel 620 and cover plate 612 instead of costly conduits bonded via manufacturing processes such as electron beam welding for welding conduits.

[0036]

[0043] In some embodiments, the upper surface 502 of the base plate 510 is substantially flat with no steps. In some embodiments, all of the multiple MFCs 144 are arranged on the manifold housing 125 along a common horizontal plane. The manifold housing 125 may include a removable cover 606 coupled to the base plate 510 for closing the manifold housing 125 and for ease of maintenance. In some embodiments, the removable cover 606 may include an opening for coupling to the exhaust section 610. In some embodiments, the removable cover 606 may include a fixed portion 606A and a removable portion 606B, or in other words, the removable cover 606 may be partially removable. In some embodiments, the removable cover 606 may include an interlock switch 608 configured to indicate whether the removable cover 606 has been accidentally removed or is not properly positioned. In some embodiments, if the interlock switch 608 indicates that the removable cover 606 has been incorrectly positioned, the FGE system 100 may be stopped or paused.

[0037]

[0044] While several figures described herein generally illustrate a fast gas exchange manifold for supplying four process gases to a process chamber, several embodiments of this disclosure are not limited to such arrangements. For example, the fast gas exchange may be connected to a minimum of two process gases and to a maximum of as many process gases as the process requires. A surplus gas supply line 130 may extend to an additional inlet 110 to add further process gases. Further associated valves disclosed herein, such as an MFC 144, a hybrid valve 150, or an ALD valve 154, are coupled to each inlet 110. Each valve for each additional process gas supplies each additional process gas to its respective outlet line 168.

[0038]

[0045] In some embodiments, the high-speed gas exchange manifolds provided herein may be combined with gas discharge. For example, one or more of the gas sources 128 may be connected to the foreline through the high-speed gas exchange manifold and configured to damp when an associated valve, such as a hybrid valve 150 or an ALD valve 154, is closed, and to flow into the process chamber 108 when the associated valve is open.

[0039]

[0046] While the foregoing applies to several embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the fundamental scope of the present disclosure.

Claims

1. A high-speed gas exchange manifold for a process chamber, A manifold housing having multiple inlets and multiple outlets for passing multiple process gases through the manifold housing, wherein the multiple outlets correspond to multiple zones within the process chamber, A plurality of hybrid valves are arranged within the manifold housing and are fluid-coupled to the plurality of inlets, A plurality of mass flow controllers located in the manifold housing downstream of the plurality of hybrid valves, wherein each of the plurality of hybrid valves is associated with one or two of the mass flow controllers, and each mass flow controller is associated with one of the plurality of zones, A plurality of mixing lines extending downstream from the plurality of mass flow controllers to a plurality of outlet lines corresponding to the plurality of outlets, wherein each of the plurality of mixing lines associated with each of the plurality of zones is fluidly coupled to one of the corresponding outlets, and A high-speed gas exchange manifold comprising a plurality of outlet valves arranged along corresponding outlet lines, wherein a flow path is defined between each inlet of the plurality of inlets and each outlet of the plurality of outlets, and each flow path includes one or more of the plurality of hybrid valves and one or more of the plurality of mass flow controllers.

2. The high-speed gas exchange manifold according to claim 1, further comprising an ALD valve disposed within the manifold housing and positioned between each of the plurality of hybrid valves and the plurality of mass flow controllers.

3. The high-speed gas exchange manifold according to claim 1, wherein each of the plurality of mass flow controllers is configured to pass one of the plurality of process gases.

4. The high-speed gas exchange manifold according to claim 1, wherein at least some of the plurality of mass flow controllers are configured to pass through a plurality of the plurality of process gases.

5. The high-speed gas exchange manifold according to claim 1, wherein the first inlet of the plurality of inlets is fluidly coupled to the first mass flow controller and the second mass flow controller of the plurality of mass flow controllers so as to selectively flow the first of the plurality of process gases to either the first mass flow controller or the second mass flow controller.

6. The high-speed gas exchange manifold according to claim 1, wherein the plurality of zones consists of two zones, and the plurality of mass flow controllers consists of eight mass flow controllers.

7. The high-speed gas exchange manifold according to any one of claims 1 to 6, wherein the plurality of hybrid valves are gas pressure or manual on / off valves.

8. The high-speed gas exchange manifold according to any one of claims 1 to 6, wherein the manifold housing includes a removable cover coupled to a base plate for closing the manifold housing.

9. The high-speed gas exchange manifold according to claim 8, wherein the manifold housing includes channels formed within the manifold housing that fluidly couple the plurality of inlets to the plurality of mass flow controllers.

10. A high-speed gas exchange system for process chambers, A high-speed gas exchange manifold according to any one of claims 1 to 6, A gas panel having multiple gas sources for supplying the multiple process gases, and A high-speed gas exchange system comprising gas supply lines extending from the plurality of gas sources to the high-speed gas exchange manifold, each of which includes a control valve.

11. The high-speed gas exchange system according to claim 10, wherein the plurality of gas sources include a first gas source having etchant gas, a second gas source having sediment gas, a third gas source having reaction gas, and a fourth gas source having inert gas.

12. The high-speed gas exchange system according to claim 10, wherein all of the aforementioned mass flow controllers are arranged in the manifold housing along a common horizontal plane.

13. The high-speed gas exchange system according to claim 10, wherein the manifold housing includes channels formed within the manifold housing for fluid coupling of the plurality of mass flow controllers to the plurality of hybrid valves.

14. The high-speed gas exchange system according to claim 13, further comprising a cover plate coupled to the outer surface of the manifold housing at a position for defining the channel.

15. A process chamber having an internal space arranged inside, the process chamber including a plurality of zones, and A substrate processing apparatus comprising a high-speed gas exchange manifold according to any one of claims 1 to 6, coupled to the process chamber.

16. The substrate processing apparatus according to claim 15, wherein the plurality of zones consist of a central zone and an outer zone.

17. The substrate processing apparatus according to claim 15, further comprising an ALD valve disposed between each of the plurality of hybrid valves and the plurality of mass flow controllers.

18. The substrate processing apparatus according to claim 15, wherein each of the plurality of outlet lines includes a pressure sensor.

19. The substrate processing apparatus according to claim 15, wherein the plurality of hybrid valves are fluidly coupled to the plurality of inlets via a plurality of first inlet lines.

20. The substrate processing apparatus according to claim 19, wherein each of the plurality of hybrid valves is fluidly coupled to two of the plurality of mass flow controllers via a plurality of second inlet lines.

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