Horizontal light-emitting diode and method for manufacturing the same

Abstract

The present invention provides a horizontal light-emitting diode and a method for manufacturing the same. [Solution] The horizontal light-emitting diode includes a permanent substrate, an epitaxial composite layer, a transparent conductive layer, a plurality of conductive blocks, a first conductivity type electrode, and a second conductivity type electrode. The epitaxial composite layer comprises a light-emitting layer having an emission wavelength of 1100 to 2000 nanometers (nm). The light-emitting layer is mounted on the permanent substrate. The transparent conductive layer is sandwiched between the permanent substrate and the epitaxial composite layer. Each conductive block is mounted between the transparent conductive layer and the epitaxial composite layer and is electrically connected to the epitaxial composite layer. The first conductivity type electrode is mounted on the permanent substrate and is electrically connected to the epitaxial composite layer. The second conductivity type electrode is mounted on the epitaxial composite layer, is electrically connected to the epitaxial composite layer, and is located on the same side as the first conductivity type electrode and the permanent substrate.

Description

Technical Field

[0001] The present invention relates to a horizontal light-emitting diode and a method for manufacturing the same, and particularly to a horizontal short-wavelength infrared light-emitting diode and a method for manufacturing the same.

Background Art

[0002] The wavelength range of a short-wave infrared (SWIR) light-emitting diode is usually between 1100 nanometers (nm) and 2000 nanometers (nm). This wavelength is outside the visible light range and is very effective in penetrating smoke, fog, or certain materials. Therefore, it is mainly used when high permeability is required or when detecting the absorption spectrum of a specific substance. Common wavelengths of SWIR are 1050 nanometers (nm), 1300 nanometers (nm), and 1550 nanometers (nm). Depending on different application requirements, a specific wavelength is selected to obtain an optimal effect. For example, in the medical application field, SWIR has the property of penetrating the human skin. Based on this property, many medical inspection devices integrate an SWIR light-emitting diode module and are used for blood vessel imaging, biological tissue inspection, and physiological index monitoring.

[0003] However, currently, generally commercially available SWIR light-emitting diodes mainly adopt a vertical chip structure, and the horizontal chip structure has not yet become popular. The package form of conventional vertical SWIR light-emitting diodes cannot meet the specific requirements of various application devices. The industry is urgently developing an innovative short-wave infrared horizontal light-emitting diode structure and manufacturing method that meet the development needs of application modules.

Summary of the Invention

[0004] The main objective of the present invention is to provide a high-brightness horizontal light-emitting diode and a method for manufacturing the same, which is applicable to short-wave infrared (SWIR) light-emitting diodes with a wavelength range of 1100 to 2000 nanometers (nm). The light-emitting diode structure disclosed in the present invention provides a horizontal architecture, increasing the flexibility of subsequent package module applications. This horizontal SWIR light-emitting diode features a design that optimizes current distribution, improving luminous brightness and expanding the application range of the end product.

[0005] To achieve the above objective, the present invention provides a horizontal light-emitting diode comprising a permanent substrate, an epitaxial composite layer, a transparent conductive layer, a plurality of conductive blocks, a first conductivity type electrode, and a second conductivity type electrode. The epitaxial composite layer comprises an emissive layer having an emission wavelength of 1100 to 2000 nanometers (nm). The emissive layer is mounted on the permanent substrate. The transparent conductive layer is sandwiched between the permanent substrate and the epitaxial composite layer. Each conductive block is mounted between the transparent conductive layer and the epitaxial composite layer and is electrically connected to the epitaxial composite layer. The first conductivity type electrode is mounted on the permanent substrate and is electrically connected to the epitaxial composite layer. The second conductivity type electrode is mounted on the epitaxial composite layer, is electrically connected to the epitaxial composite layer, and is located on the same side as the first conductivity type electrode and the permanent substrate.

[0006] In an embodiment of the horizontal light-emitting diode of the present invention, the epitaxial composite layer includes a first compound semiconductor layer and a second compound semiconductor layer, the first compound semiconductor layer and the second compound semiconductor layer sandwich a light-emitting layer, and the second compound semiconductor layer is placed between the light-emitting layer and a second conductive electrode.

[0007] In an embodiment of the horizontal light-emitting diode of the present invention, the first compound semiconductor layer is a first conductivity type indium phosphide (InP) layer, and the second compound semiconductor layer is a second conductivity type indium phosphide (InP) layer.

[0008] In an embodiment of the horizontal light-emitting diode of the present invention, the horizontal light-emitting diode further includes a dielectric layer, the epitaxial composite layer includes a highly doped indium gallium arsenide (InGaAsP) layer, each conductive block is placed within the dielectric layer, and the highly doped indium gallium arsenide layer is placed between the first conductive indium phosphide layer and the dielectric layer.

[0009] In embodiments of the horizontal light-emitting diode of the present invention, each conductive block is a metal laminate that forms ohmic contact with a highly doped indium gallium arsenide phosphide layer, and the material of the metal laminate is selected from the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc-gold (ZnAu), or a combination thereof.

[0010] In an embodiment of the horizontal light-emitting diode of the present invention, the horizontal light-emitting diode further includes a dielectric layer, and each conductive block is placed within the dielectric layer.

[0011] In an embodiment of the horizontal light-emitting diode of the present invention, each conductive block includes a highly doped compound semiconductor layer and a metal laminate, the highly doped compound semiconductor layer being sandwiched between an epitaxial composite layer and a metal laminate, and forming ohmic contact with the metal laminate.

[0012] In an embodiment of the horizontal light-emitting diode of the present invention, the highly doped compound semiconductor layer is a highly doped indium gallium arsenide (InGaAsP) layer.

[0013] In an embodiment of the horizontal light-emitting diode of the present invention, the material for the metal layer is one selected from the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc-gold (ZnAu), or a combination thereof.

[0014] In an embodiment of the horizontal light-emitting diode of the present invention, the permanent substrate is a silicon substrate or an aluminum nitride substrate.

[0015] To achieve the above objective, the present invention provides a method for manufacturing a horizontal light-emitting diode, comprising the steps of: forming an epitaxial composite layer having an emission layer with an emission wavelength of 1100 to 2000 nanometers (nm) on an epitaxial growth substrate; forming a transparent conductive layer to be placed on the epitaxial composite layer; forming a plurality of conductive blocks to be placed between the transparent conductive layer and the epitaxial composite layer and electrically connected to the epitaxial composite layer; forming a metal layer on the transparent conductive layer, bonding it to a permanent substrate wafer, and then removing the epitaxial growth substrate; forming a first conductivity type electrode on the permanent substrate that is electrically connected to the epitaxial composite layer; and forming a second conductivity type electrode on the epitaxial composite layer that is electrically connected to the epitaxial composite layer and located on the same side as the first conductivity type electrode and the permanent substrate.

[0016] In an embodiment of the horizontal light-emitting diode manufacturing method of the present invention, the step of forming an epitaxial composite layer includes forming a first compound semiconductor layer and a second compound semiconductor layer, wherein the first compound semiconductor layer and the second compound semiconductor layer sandwich a light-emitting layer, and the second compound semiconductor layer is placed between the light-emitting layer and a second conductive electrode.

[0017] In an embodiment of the horizontal light-emitting diode manufacturing method of the present invention, the first compound semiconductor layer is a first conductivity type indium phosphide (InP) layer, and the second compound semiconductor layer is a second conductivity type indium phosphide (InP) layer.

[0018] In an embodiment of the horizontal light-emitting diode manufacturing method of the present invention, the method further includes a step of forming a dielectric layer, the step of forming an epitaxial composite layer includes a step of forming a highly doped indium gallium arsenide (InGaAsP) layer, each conductive block is placed within the dielectric layer, and the highly doped indium gallium arsenide layer is placed between the first conductive indium phosphide layer and the dielectric layer.

[0019] In an embodiment of the method for manufacturing a horizontal light-emitting diode of the present invention, each conductive block is a metal stack, forms an ohmic contact with a high-doping-concentration indium gallium arsenide phosphide layer, and the material of the metal stack is selected from one or a combination of the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc gold (ZnAu).

[0020] In an embodiment of the method for manufacturing a horizontal light-emitting diode of the present invention, the method further includes a step of forming a dielectric layer, and each conductive block is disposed within the dielectric layer.

[0021] In an embodiment of the method for manufacturing a horizontal light-emitting diode of the present invention, each conductive block includes a high-doping-concentration compound semiconductor layer and a metal stack, the high-doping-concentration compound semiconductor layer is sandwiched between an epitaxial composite layer and the metal stack, and forms an ohmic contact with the metal stack.

[0022] In an embodiment of the method for manufacturing a horizontal light-emitting diode of the present invention, the high-doping-concentration compound semiconductor layer is a high-doping-concentration indium gallium arsenide phosphide (InGaAsP) layer.

[0023] In an embodiment of the method for manufacturing a horizontal light-emitting diode of the present invention, the material of the metal stack is selected from one or a combination of the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc gold (ZnAu).

[0024] In an embodiment of the method for manufacturing a horizontal light-emitting diode of the present invention, the permanent substrate is a silicon substrate or an aluminum nitride substrate.

[0025] Those skilled in the art can understand other objects of the present invention, as well as the technical means and embodiments of the present invention, by referring to the drawings and the embodiments described hereinafter.

Brief Description of the Drawings

[0026] [Figure 1A]Schematic diagram showing the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention [Figure 1B] Schematic diagram showing the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention [Figure 1C] Schematic diagram showing the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention [Figure 1D] Schematic diagram showing the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention [Figure 1E] Schematic diagram showing the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention [Figure 1F] Schematic diagram showing the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention [Figure 1G] Schematic diagram showing the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention [Figure 1H] Schematic diagram showing the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention [Figure 2] Schematic diagram of a horizontal light-emitting diode in another embodiment of the present invention [Figure 3] Flowchart of the manufacturing process of a horizontal light-emitting diode in an embodiment of the present invention

Mode for Carrying Out the Invention

[0027] Hereinafter, the content of the present invention will be described through examples. Note that the examples of the present invention are examples of embodiments, and are not intended to be limited to the environments, applications, or specific aspects as described in the examples. Therefore, the description of the examples is for explaining the present invention, but does not limit the present invention. In the embodiments and drawings, components not directly related to the present invention are omitted and not shown. The dimensional relationships of the components in the drawings are for facilitating understanding and do not limit the actual dimensions.

[0028] This invention discloses a horizontal light-emitting diode and a method for manufacturing the same. As shown in Figure 1A, a buffer layer (not shown) and an N-type ohmic contact layer 101 are grown on an epitaxial growth substrate 100 using metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) technology. Specifically, the epitaxial growth substrate 100 is, but is not limited to, an indium phosphide (InP) substrate. The buffer layer is an N-type indium phosphide (InP) epitaxial layer and is used to adjust the lattice matching between the epitaxial growth substrate and the epitaxial composite layer. This buffer layer reduces stress caused by lattice mismatch during the epitaxial manufacturing process and improves the thin film quality of the epitaxial layer.

[0029] Furthermore, the N-type ohmic contact layer 101 is an N-type indium gallium arsenide (InGaAs) epitaxial layer. Since the lattice constant of this layer lies between that of indium phosphide (InP) and the multiple quantum well structure, this N-type indium gallium arsenide epitaxial layer is also used as a buffer layer to adjust the lattice matching of the subsequent epitaxial layer. The N-type indium gallium arsenide epitaxial layer optimizes carrier injection efficiency by changing the band gap through adjusting the gallium-indium ratio, thereby controlling electron and hole transport and ensuring that more carriers are effectively injected into the light-emitting layer, improving luminescence efficiency. Additionally, the N-type ohmic contact layer 101 functions as the interface for ohmic contact between the device and the N-type electrode. The N-type indium gallium arsenide epitaxial layer employs sulfur (S), selenium (Se), or silicon (Si) as dopant, with a doping concentration of 10 18 from 10 20 cm -3 This concentration range reduces the Schottky barrier and achieves low-resistance ohmic contact.

[0030] Next, an epitaxial composite layer is grown on the N-type ohmic contact layer 101. This composite layer includes a first compound semiconductor layer 104, an emissive layer 103, and a second compound semiconductor layer 102. The emissive layer 103 is a multiple quantum well (MQW) structure formed from an indium gallium arsenide (InGaAsP) quaternary compound semiconductor and is sandwiched between the first compound semiconductor layer 104 and the second compound semiconductor layer 102. In this embodiment, the emission wavelength of the multiple quantum well is 1100 to 2000 nanometers (nm). Specifically, the first compound semiconductor layer 104 is a first-conductivity type (P-type) indium phosphide (InP) epitaxial layer, and the second compound semiconductor layer 102 is a second-conductivity type (N-type) indium phosphide (InP) epitaxial layer. Note that the materials in the above embodiment are merely examples, and the present invention is not limited thereto. In practical applications, the luminescent layer is a multiple quantum well (MQW) or double heterojunction (DH) structure, and the material and its composition are adjusted according to the emission wavelength. For example, the epitaxial layer may be made of indium aluminum gallium arsenide (InAlGaAs), indium gallium arsenide (InGaAs), indium gallium arsenide phosphide (InGaAsP), aluminum gallium phosphide (AlGaP), aluminum gallium indium phosphide (AlGaInP), indium arsenide antimonide (InAsSb), aluminum indium antimonide (InAlSb), or phosphate antimonide (InAsSbP).

[0031] As shown in Figure 1A, a compound semiconductor layer is epitaxially grown on an epitaxial composite layer. In a specific embodiment, this compound semiconductor layer is a highly doped indium gallium arsenide (InGaAsP) layer 105 and functions as an ohmic contact layer. This layer is, for example, a zinc-doped indium gallium arsenide (Zn-doped InGaAsP) epitaxial layer with a thickness of 500 to 5000 angstroms (Å), but is not limited thereto. Furthermore, the doping concentration of the zinc-doped indium gallium arsenide (Zn-doped InGaAsP) epitaxial layer is 10 18 from 10 20 cm -3 This concentration range reduces contact resistance and forms ohmic contact with the subsequent metal layer.

[0032] Next, as shown in Figure 1B, a dielectric layer 106 covering the entire surface of the wafer is formed by a deposition method, followed by a patterning process using photolithography etching to remove a portion of the dielectric layer 106. Specifically, the material of the dielectric layer 106 is silicon dioxide (SiO2), silicon nitride (Si3N4), or silicon nitrogen oxide (SiON). The pattern of the dielectric layer 106 is based on the layout design of the subsequent conductive blocks. Figure 1C shows the deposition of a metal laminate 107 between the patterned dielectric layers 106 by vapor deposition or sputtering. This metal laminate forms multiple conductive blocks on the upper surface of a highly doped indium gallium arsenide phosphide (InGaAsP) layer 105, creating ohmic contacts between the two layers. Specifically, this metal layer 107 is selected from one or a combination of the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc-gold (ZnAu), and its thickness is less than 1 micrometer, preferably 2000 to 5000 angstroms (Å). The pattern design of these conductive blocks uniformly distributes the longitudinal current of the light-emitting diode chip within the crystal structure, reducing current congestion and thereby improving luminescence efficiency.

[0033] Next, as shown in Figure 1D, a transparent conductive layer 108 is formed on the wafer surface by a vapor deposition or sputtering method. This transparent conductive layer 108 covers the dielectric layer 106 and the metal lamination 107 distributed within the dielectric layer 106, and is electrically connected to the metal lamination 107 of the conductive block. The constituent materials of the transparent conductive layer 108 are indium tin oxide (ITO), zinc aluminum oxide (AZO), zinc tin oxide (IZO), nickel oxide, cadmium tin oxide, antimony tin oxide, or a combination thereof. Next, a reflective metal layer 109 is formed on the transparent conductive layer 108 by a vapor deposition method, followed by wafer bonding with a permanent substrate 110. The transparent conductive layer 108 and the reflective metal layer 109 constitute a reflective layer system in the light-emitting diode structure of the present invention, reflecting light rays emitted from the light-emitting layer upward and improving light extraction efficiency. The material of the reflective metal layer is one selected from the group consisting of silver (Ag), titanium (Ti), platinum (Pt), gold (Au), and indium (In), or a combination thereof. The permanent substrate 110 is a silicon substrate or an aluminum nitride (AlN) substrate, but is not limited thereto.

[0034] As shown in Figure 1E, the epitaxial growth substrate 100 and buffer layer are removed from the side opposite to the permanent substrate 110 to expose the N-type ohmic contact layer 101. Next, the wafer is inverted so that the permanent substrate 110 is positioned at the bottom of the horizontal light-emitting diode structure. Then, a patterning etching process is performed on the N-type ohmic contact layer 101. In this process, a portion of the N-type ohmic contact layer 101 is removed, leaving only the portion intended to form the upper electrode region. Next, as shown in Figure 1F, the upper surface of the exposed second compound semiconductor layer 102 is roughened. This process is performed on the N-type indium phosphide (InP) epitaxial layer.

[0035] Subsequently, as shown in Figure 1G, a mesa etching (MESA) process is performed, in which a portion of the epitaxial composite layer, dielectric layer 106, and transparent conductive layer 108 is etched. Specifically, a portion of the second compound semiconductor layer 102, light-emitting layer 103, first compound semiconductor layer 104, dielectric layer 106, and transparent conductive layer 108 is etched to expose the flat surface of the reflective metal layer 109, which is then used for the subsequent installation of the lower electrode.

[0036] As shown in Figure 1H, a metal deposition process is performed to form a first conductivity type electrode 111 on the permanent substrate 110. This electrode is electrically connected to the reflective metal layer 109. A second conductivity type electrode 112 is formed on the N-type ohmic contact layer 101. The second conductivity type electrode 112 forms an ohmic contact with the N-type ohmic contact layer 101 and is electrically connected to the epitaxial composite layer. The first conductivity type electrode 111 and the second conductivity type electrode 112 are, for example, metal layers of germanium titanium (GeTi) alloy, platinum (Pt), and gold (Au), but are not limited to these. Finally, a protective layer is formed on the surface of the element, exposing the surfaces of the upper and lower electrodes. This completes the manufacturing of the horizontal SWIR light-emitting diode of the present invention. A feature of this element is that the upper and lower electrodes are located on the same side, thereby improving the design flexibility of the subsequent application module. The horizontal SWIR light-emitting diode of the present invention employs a conductive block to make the vertical current distribution inside the element more uniform, thereby improving the luminous efficiency.

[0037] Figure 2 is a schematic cross-sectional view of a horizontal SWIR light-emitting diode of another embodiment of the present invention. Unlike the previous embodiment, the conductive block of this embodiment employs a two-layer structure and includes a patterned high-doped indium gallium arsenide (InGaAsP) layer 105 and a metal laminate 107. The light-emitting diode in Figure 1H has a complete single layer of high-doped indium gallium arsenide (InGaAsP) layer 105. In contrast, in the light-emitting diode of Figure 2, the high-doped indium gallium arsenide (InGaAsP) layer 105 is patterned and integrated into each conductive block, and is no longer a continuous full-layer structure. The high-doped indium gallium arsenide (InGaAsP) layer has absorption properties for short-wave infrared light in the emission wavelength range of 1100 to 2000 nanometers (nm). Therefore, in the light-emitting diode of Figure 2, this layer is patterned and integrated into the conductive block structure, thereby reducing its overall area. This design satisfies both the needs of ohmic contact and light absorption, improving the luminous efficiency of the device.

[0038] Figure 3 is a flowchart for manufacturing the horizontal light-emitting diode of the present invention. First, in step S01, an epitaxial composite layer is formed on an epitaxial growth substrate. This composite layer includes a light-emitting layer with an emission wavelength of 1100 to 2000 nanometers (nm). In step S02, a transparent conductive layer is formed on the epitaxial composite layer. Next, in step S03, a plurality of conductive blocks are formed between the transparent conductive layer and the epitaxial composite layer. These conductive blocks are electrically connected to the epitaxial composite layer. In step S04, a metal layer is formed on the transparent conductive layer and bonded to a permanent substrate wafer, after which the epitaxial growth substrate is removed. In step S05, a first conductivity type electrode is formed on the permanent substrate. This electrode is electrically connected to the epitaxial composite layer. Finally, in step S06, a second conductivity type electrode is formed on the epitaxial composite layer. This electrode is electrically connected to the epitaxial composite layer and is located on the same side of the permanent substrate as the first conductivity type electrode. For a detailed explanation of the relevant elements in the aforementioned process, please refer to the above content. It will not be repeated here.

[0039] The above-described embodiments illustrate embodiments of the present invention and describe the characteristic configuration of the present invention. The present invention is not limited to the above embodiments. Modifications or equivalent arrangements that can be easily made by those skilled in the art are also within the scope of the present invention. The scope of protection of the rights of the present invention shall be based on the claims. [Explanation of Symbols]

[0040] 100 Epitaxial Growth Substrates 101 N-type ohmic contact layer 102 Second compound semiconductor layer 103 Light-emitting layer 104 First compound semiconductor layer 105 High-doped indium gallium arsenide layer 106 Dielectric layer 107 Metal Lamination 108 Transparent conductive layer 109 Reflective metal layer 110 Permanent Circuit Board 111 1st conductivity type electrode 112 Second conductivity type electrode

Claims

1. A horizontal light-emitting diode, Permanent circuit board and An epitaxial composite layer is provided on the permanent substrate and comprises an emissive layer having an emission wavelength of 1100 to 2000 nanometers (nm), A transparent conductive layer sandwiched between the permanent substrate and the epitaxial composite layer, A plurality of conductive blocks are placed between the transparent conductive layer and the epitaxial composite layer and are electrically connected to the epitaxial composite layer, A first conductive electrode is placed on the permanent substrate and electrically connected to the epitaxial composite layer, A horizontal light-emitting diode comprising a first conductivity type electrode and a second conductivity type electrode located on the same side of the permanent substrate as the epitaxial composite layer, which is electrically connected to the epitaxial composite layer.

2. The epitaxial composite layer includes a first compound semiconductor layer and a second compound semiconductor layer. The first compound semiconductor layer and the second compound semiconductor layer sandwich the light-emitting layer, The horizontal light-emitting diode according to claim 1, characterized in that the second compound semiconductor layer is installed between the light-emitting layer and the second conductive electrode.

3. The first compound semiconductor layer is a first conductivity type indium phosphide (InP) layer, The horizontal light-emitting diode according to claim 2, characterized in that the second compound semiconductor layer is a second conductivity type indium phosphide (InP) layer.

4. Further comprising a dielectric layer, The epitaxial composite layer includes a highly doped indium gallium arsenide (InGaAsP) layer. Each of the conductive blocks is placed within the dielectric layer, The horizontal light-emitting diode according to claim 3, characterized in that the high-doping concentration indium gallium arsenide layer is installed between the first conductive indium phosphide layer and the dielectric layer.

5. Each of the conductive blocks is a metal laminate and forms ohmic contact with the high-doped indium gallium arsenide layer. The horizontal light-emitting diode according to claim 4, characterized in that the material of the metal layer is one selected from the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc gold (ZnAu), or a combination thereof.

6. Further comprising a dielectric layer, The horizontal light-emitting diode according to claim 3, characterized in that each of the conductive blocks is installed within the dielectric layer.

7. Each of the conductive blocks comprises a highly doped compound semiconductor layer and a metal layer. The horizontal light-emitting diode according to claim 6, characterized in that the high-doped compound semiconductor layer is sandwiched between the epitaxial composite layer and the metal stack, and forms an ohmic contact with the metal stack.

8. The horizontal light-emitting diode according to claim 7, characterized in that the high-doped compound semiconductor layer is a high-doped indium gallium arsenide (InGaAsP) layer.

9. The horizontal light-emitting diode according to claim 7, characterized in that the material of the metal layer is one selected from the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc gold (ZnAu), or a combination thereof.

10. The horizontal light-emitting diode according to claim 1, characterized in that the permanent substrate is a silicon substrate or an aluminum nitride substrate.

11. A method for manufacturing a horizontal light-emitting diode, A step of forming an epitaxial composite layer having an emissive layer with an emission wavelength of 1100 to 2000 nanometers (nm) on an epitaxial growth substrate, A step of forming a transparent conductive layer on the epitaxial composite layer, A step of forming a plurality of conductive blocks that are placed between the transparent conductive layer and the epitaxial composite layer and electrically connected to the epitaxial composite layer, A step of forming a metal layer on the transparent conductive layer, bonding it to a permanent substrate wafer, and then removing the epitaxial growth substrate, A step of forming a first conductive electrode electrically connected to the epitaxial composite layer on the permanent substrate, A method for manufacturing a horizontal light-emitting diode, comprising the step of forming a second conductivity electrode on the epitaxial composite layer, which is electrically connected to the epitaxial composite layer and is located on the same side as the first conductivity electrode and the permanent substrate.

12. The step of forming the epitaxial composite layer includes forming a first compound semiconductor layer and a second compound semiconductor layer. The first compound semiconductor layer and the second compound semiconductor layer sandwich the light-emitting layer, The method for manufacturing a horizontal light-emitting diode according to claim 11, characterized in that the second compound semiconductor layer is installed between the light-emitting layer and the second conductive electrode.

13. The first compound semiconductor layer is a first conductivity type indium phosphide (InP) layer, The method for manufacturing a horizontal light-emitting diode according to claim 12, characterized in that the second compound semiconductor layer is a second conductivity type indium phosphide (InP) layer.

14. The process further includes a step of forming a dielectric layer, The step of forming the epitaxial composite layer includes the step of forming a highly doped indium gallium arsenide (InGaAsP) layer, Each of the conductive blocks is placed within the dielectric layer, The method for manufacturing a horizontal light-emitting diode according to claim 13, characterized in that the high-doping concentration indium gallium arsenide layer is installed between the first conductive indium phosphide layer and the dielectric layer.

15. Each of the conductive blocks is a metal laminate and forms ohmic contact with the high-doped indium gallium arsenide layer. The method for manufacturing a horizontal light-emitting diode according to claim 14, characterized in that the material of the metal layer is one selected from the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc gold (ZnAu), or a combination thereof.

16. The process further includes a step of forming a dielectric layer, The method for manufacturing a horizontal light-emitting diode according to claim 13, characterized in that each of the conductive blocks is installed in the dielectric layer.

17. Each of the conductive blocks comprises a highly doped compound semiconductor layer and a metal layer. The method for manufacturing a horizontal light-emitting diode according to claim 16, characterized in that the high-doped compound semiconductor layer is sandwiched between the epitaxial composite layer and the metal stack and forms ohmic contact with the metal stack.

18. The method for manufacturing a horizontal light-emitting diode according to claim 17, characterized in that the high-doping compound semiconductor layer is a high-doping indium gallium arsenide phosphide (InGaAsP) layer.

19. The method for manufacturing a horizontal light-emitting diode according to claim 17, characterized in that the material of the metal layer is one selected from the group consisting of titanium (Ti), platinum (Pt), gold (Au), palladium (Pd), germanium (Ge), and zinc gold (ZnAu), or a combination thereof.

20. The method for manufacturing a horizontal light-emitting diode according to claim 11, characterized in that the permanent substrate is a silicon substrate or an aluminum nitride substrate.

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