Dielectrics, laminates, capacitors, electrical circuits, circuit boards, and equipment

Abstract

A dielectric 10 includes a tantalum compound containing fluorine and oxygen. The tantalum compound satisfies the conditions of 0 < x < 2.5 and 0.08 < y ≤ 0.2. x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound. y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound.

Description

[Technical Field]

[0001] This disclosure relates to dielectrics, laminates, capacitors, electrical circuits, circuit boards, and equipment. [Background technology]

[0002] Conventionally, tantalum compounds containing fluorine and oxygen are known.

[0003] For example, Patent Document 1 describes a dielectric material containing an amorphous tantalum compound containing fluorine and oxygen. This dielectric material has a higher dielectric constant compared to a dielectric material that does not contain fluorine.

[0004] Patent Document 2 describes a capacitor comprising metallic tantalum, a conductor, and a tantalum oxide film. The tantalum oxide film is positioned in contact with the metallic tantalum and between the metallic tantalum and the conductor. The tantalum oxide film contains a first region and a second region containing fluorine. The second region is located closer to the metallic tantalum than the first region in the thickness direction of the tantalum oxide film. The concentration of fluorine in the second region is lower than the concentration of fluorine in the first region. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Patent No. 7122617 [Patent Document 2] International Publication No. 2023 / 234343 [Overview of the project] [Problems that the invention aims to solve]

[0006] This disclosure provides a dielectric material that is advantageous from the viewpoint of increasing dielectric strength. [Means for solving the problem]

[0007] The dielectric of the present disclosure contains a tantalum compound containing fluorine and oxygen, the tantalum compound satisfies the conditions of 0 < x < 2.5 and 0.08 < y ≤ 0.2, in the above conditions, x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound, and y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound.

Advantages of the Invention

[0008] According to the present disclosure, a dielectric advantageous from the viewpoint of increasing the breakdown voltage can be provided.

Brief Description of the Drawings

[0009] [Figure 1] FIG. 1 is a cross-sectional view showing an example of the laminate of the present disclosure. [Figure 2] FIG. 2 is a cross-sectional view showing an example of the capacitor of the present disclosure. [Figure 3] FIG. 3 is a cross-sectional view showing another example of the capacitor of the present disclosure. [Figure 4A] FIG. 4A is a diagram schematically showing an example of the electric circuit of the present disclosure. [Figure 4B] FIG. 4B is a diagram schematically showing an example of the circuit board of the present disclosure. [Figure 4C] FIG. 4C is a diagram schematically showing an example of the device of the present disclosure. [Figure 5] FIG. 5 is a graph showing the results of X-ray diffraction (XRD) measurement of the sample according to Example 2 and metallic tantalum. [Figure 6] FIG. 6 is a graph showing the relationship between the breakdown voltage of the dielectric film of the samples according to each example and each comparative example and the fluorine content in the tantalum compound. [Figure 7] FIG. 7 is a graph showing the relationship between the normalized Q value of the samples according to each example and each comparative example and the fluorine content in the tantalum compound. [[ID= forty-seven ]] [[ID= forty-eight ]] [[ID= forty-nine ]]

Modes for Carrying Out the Invention

[0010] (Knowledge underlying the present disclosure) For example, there has been a continuous demand to improve the processing performance of electronic devices. The performance of electronic components such as capacitors has a great influence on the performance of the electronic devices in which the electronic components are incorporated. For this reason, an increasing need for capacitors that are small-sized and can exhibit high performance is assumed. As capacitors, for example, electrolytic capacitors are known. In an electrolytic capacitor, a dielectric made of a thin oxide film is formed on the surface of metallic aluminum or metallic tantalum by chemical conversion treatment of aluminum or tantalum. In an electrolytic capacitor, attempts have been mainly made to increase the capacitance by increasing the specific surface area of the dielectric. On the other hand, such attempts have limitations, and it is considered that if a dielectric material having a higher dielectric constant or a higher breakdown voltage can be developed, the performance of the capacitor can be further improved. In addition, such a dielectric material is considered to be promising as a material for the gate insulating film of a transistor.

[0011] According to Patent Document 1, a dielectric containing an amorphous tantalum oxide containing fluorine exhibits a higher relative dielectric constant than a dielectric containing a tantalum oxide not containing fluorine. The composition of this amorphous tantalum oxide containing fluorine is represented by the composition of TaO x F y . In this composition, a high relative dielectric constant can be exhibited in the range of 0 < x < 2.5 and 0 < y ≤ 0.4. Thus, by using a tantalum oxide containing fluorine for a capacitor, it is expected that the capacitance of the capacitor will increase.

[0012] According to Patent Document 2, the dielectric layer is obtained by anodic oxidation of tantalum in an aqueous solution containing fluorine ions. Patent Document 2 shows that there are conditions under which the dielectric loss tangent of the anodic oxide film increases. Further, according to Patent Document 2, it is understood that by performing anodic oxidation of tantalum in a fluorine-free aqueous solution and then performing additional anodic oxidation in a fluorine-containing aqueous solution, the dielectric loss tangent of the dielectric of amorphous tantalum oxide containing fluorine becomes lower. According to Document 2, when the amorphous tantalum oxide containing fluorine is represented by the composition of TaO x F y , the conditions of 0 < x < 2.5 and 0.015 ≤ y ≤ 0.4 are satisfied. Thus, it is expected that by using a predetermined tantalum oxide containing fluorine for the capacitor, the dielectric loss tangent of the capacitor can be reduced. Note that it is advantageous for the dielectric loss tangent of the dielectric to be low in order to reduce the electrical energy loss in the capacitor.

[0013] On the other hand, in order to improve the performance of the capacitor, it is also important to increase the breakdown voltage of the dielectric. For example, if the breakdown voltage of the dielectric is high, the operating voltage of the capacitor can be increased. Or, even if the thickness of the dielectric is made smaller, the same operating voltage as before can be realized. By reducing the thickness of the dielectric, the capacitance of the capacitor can also be increased.

[0014] In view of such circumstances, the inventors have intensively studied the breakdown voltage characteristics of tantalum compounds containing fluorine and oxygen. As a result, the inventors have newly found that the breakdown voltage of the dielectric can be increased by adjusting the fluorine content in the tantalum compound containing fluorine and oxygen. Based on this new finding, the inventors have completed the dielectric of the present disclosure.

[0015] (Embodiment) Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The present disclosure is not limited to the following embodiments.

[0016] FIG. 1 is a cross-sectional view showing an example of the laminate of the present disclosure. As shown in FIG. 1, the laminate 1a includes a dielectric 10. The dielectric 10 contains a tantalum compound containing fluorine and oxygen. The tantalum compound is, for example, amorphous. The tantalum compound may contain a crystalline substance. This tantalum compound satisfies the conditions of 0 < x < 2.5 and 0.08 < y ≤ 0.2. Under these conditions, x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound. In addition, y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound. Since the dielectric 10 contains such a tantalum compound, the breakdown voltage of the dielectric 10 tends to be high.

[0017] Preferably, the above tantalum compound satisfies the condition of 0.08 < y ≤ 0.16. In this case, the breakdown voltage of the dielectric 10 tends to be high, and the capacitance of the capacitor provided with the dielectric 10 tends to be high. Therefore, in a capacitor provided with the dielectric 10, the Q value, which is the product of the capacitance [F] and the breakdown voltage [V], which are indicators showing the performance of the capacitor, tends to be high.

[0018] The above tantalum compound has, for example, a composition represented by TaO x F y The above tantalum compound may contain impurity elements other than tantalum, fluorine, and oxygen. The content of the impurity elements in the tantalum compound is, for example, 5 atomic% or less.

[0019] As shown in FIG. 1, the dielectric 10 is, for example, a film. The dielectric 10 is, for example, an anodic oxide film. The dielectric 10 can be obtained, for example, by causing an electric current to flow between an anode and a cathode in a state where a solution containing fluoride is brought into contact with an anode and a cathode including metallic tantalum to perform anodic oxidation.

[0020] As shown in FIG. 1, the laminate 1a further includes metallic tantalum 20, and the dielectric 10 is in contact with the surface of the metallic tantalum 20. The metallic tantalum 20 forms, for example, the surface of a base material that supports the film formed by the dielectric 10.

[0021] Figure 2 is a cross-sectional view showing an example of a capacitor according to this disclosure. As shown in Figure 2, the capacitor 2a comprises a first electrode 21, a second electrode 22, and a dielectric 10. The dielectric 10 is positioned between the first electrode 21 and the second electrode 22. The dielectric 10 is configured similarly to the dielectric 10 in the laminate 1a described above. Because the capacitor 2a includes the dielectric 10, it is likely to have a high dielectric strength and can exhibit desired performance.

[0022] The first electrode 21 contains, for example, metallic tantalum 20. The first electrode 21 may also contain valve metals other than tantalum, or it may contain gold, platinum, copper, etc.

[0023] The second electrode 22 may contain an electrolyte or a conductive polymer. The second electrode 22 may contain a conductor used for the upper electrode, which is positioned between the lower electrode, which is positioned near the base material of the circuit board on which the capacitor 2a is mounted, and the dielectric.

[0024] The first electrode 21 has, for example, a main surface 21p. One main surface of the dielectric 10 is in contact with, for example, the main surface 21p. The second electrode 22 has a main surface 22p parallel to the main surface 21p. The other main surface of the dielectric 10 is in contact with, for example, the main surface 22p.

[0025] Figure 3 is a cross-sectional view showing another example of the capacitor of this disclosure. Capacitor 2b shown in Figure 3 is configured similarly to capacitor 2a, except for parts that are not specifically described. Components of capacitor 2b that are the same as or correspond to components of capacitor 2a are denoted by the same reference numerals, and detailed descriptions are omitted. Descriptions of capacitor 2a also apply to capacitor 2b, to the extent that they do not technically contradict each other.

[0026] As shown in Figure 3, in capacitor 2b, the first electrode 21 contains metallic tantalum 20, and at least a portion of the metallic tantalum 20 is porous. With this configuration, the surface area of ​​the metallic tantalum 20 tends to be large, and capacitor 2b tends to have a high capacitance. Such a porous structure can be formed, for example, by etching metal foil and sintering powder.

[0027] The dielectric 10 is placed on the surface of a porous portion of the metallic tantalum 20. As described above, the dielectric 10 is, for example, an anodic oxide film.

[0028] As shown in Figure 3, capacitor 2b further includes an electrolyte 23. The electrolyte 23 is located between the first electrode 21 and the second electrode 22. With this configuration, capacitor 2b is more likely to have a higher capacitance.

[0029] The electrolyte 23 is not limited to a specific electrolyte. The electrolyte 23 includes, for example, at least one selected from the group consisting of electrolytes, solid electrolytes, and conductive polymers. Examples of conductive polymers are polypyrrole, polythiophene, polyaniline, and their derivatives. The electrolyte may also be a manganese compound such as manganese oxide.

[0030] The electrolyte 23 is arranged, for example, to fill the voids around the porous portion of the metallic tantalum 20. The second electrode 22 may include, for example, a solidified silver-containing paste, a carbon material such as graphite, or both of the above solidified paste and the carbon material.

[0031] Figure 4A is a schematic diagram showing an example of an electrical circuit of the present disclosure. Electrical circuit 3 includes a capacitor 2a. Electrical circuit 3 may be an active circuit or a passive circuit. Electrical circuit 3 may be a discharge circuit, a smoothing circuit, a decoupling circuit, or a coupling circuit. Because electrical circuit 3 includes a capacitor 2a, electrical circuit 3 is more likely to exhibit desired performance. For example, noise is more easily reduced in electrical circuit 3. Electrical circuit 3 may also include a capacitor 2b.

[0032] Figure 4B is a schematic diagram showing an example of a circuit board of the present disclosure. As shown in Figure 4B, the circuit board 5 includes a capacitor 2a. For example, an electrical circuit 3 including a capacitor 2a is formed on the circuit board 5. Because the circuit board 5 includes a capacitor 2a, the circuit board 5 is more likely to exhibit the desired performance. The circuit board 5 may be an embedded board or a motherboard. The circuit board 5 may also include a capacitor 2b.

[0033] Figure 4C is a schematic diagram showing an example of the device of this disclosure. As shown in Figure 4C, the device 7 includes a capacitor 2a. The device 7 includes, for example, a circuit board 5 including a capacitor 2a. Because the device 7 includes a capacitor 2a, it is easier for the device 7 to achieve the desired performance. The device 7 may be an electronic device, a communication device, a signal processing device, or a power supply device. The device 7 may be a server, an AC adapter, an accelerator, or a flat panel display such as a liquid crystal display (LCD). The device 7 may be a USB charger, a solid state drive (SSD), an information terminal such as a PC, smartphone, or tablet PC, or an Ethernet switch. The device 7 may also include a capacitor 2b.

[0034] The above dielectric 10 may be included, for example, in the gate insulating film of a transistor. In other words, a transistor provided with a gate insulating film including the dielectric 10 can be provided. The transistor is, for example, a field effect transistor (FET).

[0035] (Appended Note) From the above description, the following technologies are disclosed. (Technology 1) A dielectric containing a tantalum compound containing fluorine and oxygen, where the tantalum compound satisfies the conditions of 0 < x < 2.5 and 0.08 < y ≤ 0.2, where, under the above conditions, x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound, and y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound. Dielectric. (Technology 2) The tantalum compound satisfies the condition of 0.08 < y ≤ 0.16, The dielectric described in Technology 1. (Technology 3) The dielectric is an anodic oxide film, The dielectric described in Technology 1 or 2. (Technology 4) The tantalum compound is amorphous, The dielectric described in any one of Technologies 1 to 3. (Technology 5) The tantalum compound has a composition represented by TaO x F y and has a composition represented by The dielectric described in any one of Technologies 1 to 4. (Technology 6) Comprising metallic tantalum and a dielectric in contact with the surface of the metallic tantalum, where the dielectric contains a tantalum compound containing fluorine and oxygen, where the tantalum compound satisfies the conditions of 0 < x < 2.5 and 0.08 < y ≤ 0.2, Under the above conditions, x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound, and y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound. Laminate. (Technology 7) A first electrode, A second electrode, A dielectric disposed between the first electrode and the second electrode, and includes: The dielectric includes a tantalum compound containing fluorine and oxygen, The tantalum compound satisfies the conditions of 0 < x < 2.5 and 0.08 < y ≤ 0.2, Under the above conditions, x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound, and y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound. Capacitor. (Technology 8) Further comprising an electrolyte disposed between the first electrode and the second electrode, The capacitor according to Technology 7. (Technology 9) The electrolyte includes at least one selected from the group consisting of an electrolytic solution, a solid electrolyte, and a conductive polymer. The capacitor according to Technology 8. (Technology 10) An electric circuit comprising the capacitor according to any one of Technologies 7 to 9. (Technology 11) A circuit board comprising the capacitor according to any one of Technologies 7 to 9. (Technology 12) An apparatus comprising the capacitor according to any one of Technologies 7 to 9. [[ID=4​​​​​​​​​​​A flat sheet of metallic tantalum was immersed in acetone and ultrasonically cleaned for 10 minutes to clean the surface of the metallic tantalum. The acetone adhering to the surface of the metallic tantalum was then dried by nitrogen blowing, and the surface of the metallic tantalum was washed with pure water. Finally, the metallic tantalum was dried in the atmosphere to obtain an anode foil.

[0038] The anode foil and a metal tantalum plate acting as the counter electrode were arranged at predetermined intervals so as to be immersed in a phosphoric acid aqueous solution. The portion of the anode foil not immersed in the solution was connected to the positive electrode of the power supply, and the portion of the metal tantalum plate not immersed in the solution was connected to the negative electrode of the power supply. A voltage of 15V was applied between the anode foil and the metal tantalum plate for 13 hours to form an oxide layer containing tantalum oxide on the surface of the anode foil. The anode foil was then removed from the aqueous solution, washed with pure water, and dried in the air.

[0039] Next, the anode foil with the oxide layer formed on it and a metal tantalum plate as the counter electrode were placed at predetermined intervals so as to be immersed in a mixed aqueous solution of potassium fluoride and potassium phosphate buffer. The portion of the anode foil not immersed in the mixed aqueous solution was connected to the positive electrode of the power supply, and the portion of the metal tantalum plate not immersed in the mixed aqueous solution was connected to the negative electrode of the power supply. A voltage of 45V was applied between the anode foil and the metal tantalum plate for 4 hours to form a fluorine-containing tantalum compound layer on the anode foil. The concentrations of potassium fluoride and potassium phosphate buffer in the mixed aqueous solution were 0.5 mol / L to 3 mol / L and 0.05 mol / L, respectively. The anode foil was removed from the mixed aqueous solution, washed with pure water, and then dried in the air.

[0040] Next, the anode foil on which a fluorine-containing tantalum compound layer was formed was heat-treated at 260°C for 2 hours in air. After the heat treatment, the anode foil was allowed to cool to room temperature (20°C to 30°C), and the metal tantalum plate, which served as the counter electrode, was placed at a predetermined interval so as to be immersed in an aqueous phosphoric acid solution. The portion of the anode foil not immersed in the solution was connected to the positive electrode of the power supply, and the portion of the metal tantalum plate not immersed in the solution was connected to the negative electrode of the power supply. A voltage of 44.5V was applied between the anode foil and the metal tantalum plate for 30 minutes to perform a repair conversion. The anode foil was removed from the aqueous phosphoric acid solution, washed with pure water, and then dried in air. In this way, samples according to Examples 1 to 4 were obtained, in which a dielectric film containing a tantalum compound containing fluorine and oxygen was formed on the surface of the metal tantalum.

[0041] (Comparative Example 1) A flat sheet of metallic tantalum was immersed in acetone and ultrasonically cleaned for 10 minutes to clean the surface of the metallic tantalum. The acetone adhering to the surface of the metallic tantalum was then dried by nitrogen blowing, and the surface of the metallic tantalum was washed with pure water. Finally, the metallic tantalum was dried in the atmosphere to obtain an anode foil.

[0042] The anode foil and a metal tantalum plate as the counter electrode were arranged at a predetermined interval so as to be immersed in a phosphoric acid aqueous solution. The portion of the anode foil not immersed in the aqueous solution was connected to the positive electrode of the power supply, and the portion of the metal tantalum plate not immersed in the aqueous solution was connected to the negative electrode of the power supply. A voltage of 40V was applied between the anode foil and the metal tantalum plate for 13 hours to form an oxide layer containing tantalum oxide on the surface of the anode foil. The anode foil was then removed from the aqueous solution, washed with pure water, and dried in the air. In this way, a sample according to Comparative Example 1 was obtained in which a dielectric film was formed on the surface of the metal tantalum.

[0043] (Comparative Example 2) A sample relating to Comparative Example 2 was obtained in the same manner as in Examples 1 to 4, except for the points described below. The concentration of potassium fluoride in the mixed aqueous solution used to form the fluorine-containing tantalum compound layer was adjusted to 0.1 mol / L.

[0044] (Elemental composition analysis) Fragments of a predetermined size were cut out from the samples according to each example and each comparative example, and samples for TOF-SIMS were prepared by resin embedding. Using a TOF-SIMS apparatus TOF.SIMS5 manufactured by ION-TOF, TOF-SIMS measurement was performed on the samples prepared from the samples according to Example 1 and Comparative Example 1, and compositional analysis in the depth direction of the samples was performed. In TOF-SIMS, a Bi ion beam was used as the primary ion beam. As the sputtering ion species, O 2+ was used. From the signal intensities of F - , TaO 3- , and O - in the depth profile of the TOF-SIMS measurement results, the fluorine content in the dielectric film of the sample was determined. A calibration curve was used to determine the fluorine content from the TOF-SIMS measurement results. The calibration curve was created based on the measurement results using a Rutherford backscattering spectroscopy (RBS) apparatus Pelletron 5SDH-2, and the signal intensity of F - in the TOF-SIMS measurement results was associated with the value of y in the tantalum compound represented by TaO x F y .

[0045] (X-ray diffraction) XRD patterns were acquired by 2θ / θ scanning of samples prepared from samples related to each example using the PANalytical X'Pert PRO X-ray diffractometer. Cu-Kα rays were used as the X-ray source, with the voltage adjusted to 45kV and the current to 40mA. The wavelength of Cu-Kα rays is 0.15418nm. Figure 5 is a graph showing the results of X-ray diffraction (XRD) measurements of the sample related to Example 2 and metallic tantalum. In Figure 5, the vertical axis represents the diffraction intensity in arbitrary units, and the horizontal axis represents the diffraction angle 2θ. As shown in Figure 5, the XRD measurement results of the sample related to Example 2 showed that although diffraction peaks originating from metallic tantalum were confirmed, a broad profile was observed overall. Therefore, it was shown that the tantalum compound contained in the dielectric film of the sample related to Example 2 is amorphous. Similarly, it was shown that the tantalum compounds contained in the dielectric films of the samples related to the other examples are also amorphous.

[0046] (Withstand voltage evaluation) Samples for each example and comparative example were mounted in a plate electrode evaluation cell manufactured by BAS Corporation, and the withstand voltage was evaluated using chronovoltammetry with a phosphoric acid aqueous solution as the electrolyte and platinum as the counter electrode. The constant current value in chronovoltammetry was set to 1 μA, and the voltage value after 5 minutes was taken as the withstand voltage. The evaluation was performed at room temperature (20°C to 30°C). The thickness of the dielectric film in each sample was evaluated by spectroscopic ellipsometry. The withstand voltage [V / nm] was calculated by dividing the withstand voltage by the thickness of the dielectric film. The results are shown in Table 1.

[0047] Figure 6 is a graph showing the relationship between the dielectric voltage of the dielectric film samples for each example and comparative example and the fluorine content in the tantalum compound. In Figure 6, the vertical axis is the dielectric voltage [V / nm], and the horizontal axis is the molar ratio y of fluorine content to tantalum content in the dielectric film. The composition of the tantalum compound containing fluorine and oxygen in the dielectric film samples for each example is given by using the molar ratio y as follows: TaO x F yIt is represented as follows. As shown in FIG. 6, the breakdown voltage of the tantalum compound containing fluorine and oxygen, which forms the dielectric film of the sample according to each embodiment, is higher than the breakdown voltage of the tantalum oxide not containing fluorine, which forms the dielectric film of the sample according to Comparative Example 1. In addition, the breakdown voltage of the tantalum compound containing fluorine and oxygen, which forms the dielectric film of the sample according to each embodiment, is higher than the breakdown voltage of the tantalum compound, which forms the dielectric film of the sample according to Comparative Example 2. According to the comparison between each embodiment and each comparative example, it is understood that when the condition of 0.08 < y ≦ 0.2 is satisfied in the composition of TaO x F y , the breakdown voltage of the dielectric film containing the tantalum compound is likely to be high. Since the tantalum oxide contained in the dielectric film of the sample according to Comparative Example 1 does not contain fluorine, that tantalum oxide has a composition in which y is 0 in the notation with TaO x F y .

[0048] (Capacitance Evaluation) The samples according to each embodiment and each comparative example were attached to a plate electrode evaluation cell manufactured by BAS Inc., and the capacitance was evaluated according to the AC impedance method using a platinum counter electrode with an aqueous sulfuric acid solution as the electrolyte. The value of the capacitance used for the evaluation was the value of the capacitance at 120 Hz. The evaluation was performed at room temperature (20°C to 30°C). The results are shown in Table 1.

[0049] FIG. 7 is a graph showing the relationship between the normalized Q value in the samples according to each embodiment and each comparative example and the fluorine content in the tantalum compound. In FIG. 7, the vertical axis represents the normalized Q value, and the horizontal axis represents the molar ratio y of the fluorine content to the tantalum content in the dielectric film. The normalized Q value is a value obtained by normalizing the Q value defined as the product of the capacitance obtained in the above capacitance evaluation and the above breakdown voltage with the Q value in the sample according to Comparative Example 1. As shown in FIG. 7, the Q value in the samples according to the embodiments was higher than the Q value in the samples according to the comparative examples. In particular, TaO x F yIn the composition, when the condition of 0.08 < y ≤ 0.16 is satisfied, it is understood that not only the breakdown voltage of the dielectric film tends to be high, but also the Q value tends to be high.

[0050]

Table 1

Industrial Applicability

[0051] The dielectric of the present disclosure can be suitably used for electronic components such as capacitors and transistors.

Claims

1. It contains a tantalum compound containing fluorine and oxygen, The tantalum compound satisfies the conditions 0 < x < 2.5 and 0.08 < y ≤ 0.

16. In the above conditions, x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound, and y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound. Dielectric.

2. The dielectric is an anodic oxide film. The dielectric according to claim 1.

3. The tantalum compound is amorphous. The dielectric according to claim 1.

4. The tantalum compound is TaO x F y Having a composition represented by, The dielectric according to claim 1.

5. Metallic tantalum and, The dielectric material is in contact with the surface of the aforementioned metallic tantalum, The dielectric comprises a tantalum compound containing fluorine and oxygen. The tantalum compound satisfies the conditions 0 < x < 2.5 and 0.08 < y ≤ 0.

16. In the above conditions, x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound, and y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound. Laminated structure.

6. First electrode and The second electrode and A dielectric material disposed between the first electrode and the second electrode, The dielectric comprises a tantalum compound containing fluorine and oxygen. The tantalum compound satisfies the conditions 0 < x < 2.5 and 0.08 < y ≤ 0.

16. In the above conditions, x is the ratio of the number of oxygen atoms to the number of tantalum atoms in the tantalum compound, and y is the ratio of the number of fluorine atoms to the number of tantalum atoms in the tantalum compound. Capacitor.

7. The system further comprises an electrolyte disposed between the first electrode and the second electrode, The capacitor according to claim 6.

8. The electrolyte comprises at least one selected from the group consisting of an electrolyte solution, a solid electrolyte, and a conductive polymer. The capacitor according to claim 7.

9. An electrical circuit comprising a capacitor according to any one of claims 6 to 8.

10. A circuit board comprising the capacitor according to any one of claims 6 to 8.

11. A device comprising the capacitor according to any one of claims 6 to 8.

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