Plasma condition monitoring device for connection to impedance matching circuit for plasma generation system, plasma generation system, and method for monitoring plasma generation system

Abstract

A plasma condition monitor (1) for a plasma generation system (100) having an impedance matching circuit (50) includes: a) detecting a first set of time-varying measurements (30), the first set of time-varying measurements (30) being related to time-sequentially picked-up impedances detectable at one of a plurality of terminals (50a, 50b) of the impedance matching circuit (50); and b) detecting a second set of time-varying measurements (31) of at least one measurand, the at least one measurand being a voltage (32), a current (33), and a phase relationship between the voltage (32) and the current (33). (34), wherein the time-varying measurements (31) are taken consecutively in time, and c) detecting a second group of time-varying measurements (31) of at least one measurand, wherein the time-varying measurements (31) are taken consecutively in time; and c) displaying the first group on a first chart (35) and the second group on a second chart (36), wherein the first chart (35) is a chart without a time axis and the second chart (36) has two axes (36a, 36b), one of which (36b) is a time axis, configured to display the first group on the first chart (35) and the second group on the second chart (36). Both groups of time-varying measurements (30, 31) are taken within the same time period.

Description

Technical Field

[0001] The present invention relates to a plasma state monitoring device for connecting to an impedance matching circuit for a plasma generation system, a plasma generation system, and a method for monitoring a plasma generation system.

[0002] The surface treatment of a workpiece using plasma and, for example, semiconductor manufacturing and the machining of a workpiece by a gas laser are industrial processes in which plasma is generated in a plasma chamber by a direct current or by a high-frequency alternating current signal having an operating frequency within the range of several tens of kHz to the GHz range. In such plasma processes, small errors can sometimes lead to extremely large damages.

[0003] The plasma chamber is connected to a high-frequency generator (HF generator) via further electronic components, such as coils, capacitors, lines, or transformers. The further components may form an oscillation circuit, a filter, or an impedance matching circuit. The HF generator is usually formed as an output converter that converts a conventional power supply voltage having a frequency of 50 to 60 Hz into a desired HF voltage and thus a corresponding output during operation.

[0004] The plasma process has the problem that the electrical load impedance of the plasma chamber (= consumer) generated during the process is affected by the state in the plasma chamber and changes drastically. In particular, the characteristics of the workpiece, the electrodes, and the gas ratio are involved.

[0005] The high-frequency generator has a limited working range with respect to the impedance of the connected electrical load (= consumer). If the load impedance deviates from the acceptable range, damage or even destruction of the HF generator may occur.

[0006] For this reason, an impedance matching circuit (matchbox) is generally required to convert the load impedance to the rated impedance of the generator output.

[0007] Various types of impedance matching circuits are known. For example, an impedance matching circuit is invariably tuned and has a preset conversion function, that is, it consists of electrical components, particularly coils and capacitors, that cannot be changed during operation. This is particularly significant when the operation is always constant, such as in the case of a gas laser. Furthermore, impedance matching circuits are known in which at least some of the components are mechanically variable. For example, a motor-operated rotary capacitor is known in which the capacitance value can be changed by changing the relative arrangement of capacitor plates. Also known are multiple switchable reactances, such as capacitors, each of which may have different values.

[0008] Broadly speaking, a plasma may be assigned three impedance ranges. Before ignition, a very high impedance typically exists, with a value greater than 1 kΩ. During normal operation, i.e., when the plasma is operating as specified, a relatively low impedance typically exists, with a value less than 100 Ω. In the event of undesirable localized discharge (arc) or plasma fluctuations, a very low impedance typically exists, with a value less than 0.5 Ω. In addition to these three identified impedance ranges, yet another special state may occur with a different assigned impedance value. If the load impedance changes abruptly, and in this case the load impedance or converted load impedance falls outside the acceptable impedance range, the HF generator or the transmission equipment between the HF generator and the plasma chamber will also be damaged. Furthermore, an undesirable plasma state may occur that suggests a stable state.

[0009] Such impedance matching circuits are described, for example, in German Patent Application Publication No. 102009001355.

[0010] Based on the different plasma states, it is not always possible to obtain information from impedance alone regarding whether the existing plasma state is the desired plasma state.

[0011] Therefore, the object of the present invention as described herein is to provide the possibility that an operator of a plasma generation system can recognize an undesirable plasma state very quickly and reliably and take countermeasures based on that information.

[0012] This problem is solved by the plasma state monitoring device according to independent claim 1, the plasma generation system according to claim 31, and the method for monitoring the plasma generation system according to claim 32. Claims 2 to 30 describe improved forms of the plasma state monitoring device according to the present invention.

[0013] The plasma state monitoring device according to the present invention is used to connect to an impedance matching circuit for a plasma generation system. An impedance matching circuit is sometimes called a matchbox. The plasma state monitoring device is configured to detect a first group of time-variable measurements. The first group of time-variable measurements are related to impedances picked up in time continuously, detectable at one of a plurality of terminals of the impedance matching circuit (e.g., an input terminal or an output terminal). Preferably, the first group of time-variable measurements are impedances. The first group of time-variable measurements may also be reflection coefficients related to impedances. The phrase "picked up" means both measured and calculated. The plasma state monitoring device is further configured to detect a second group of time-variable measurements of at least one meter. The at least one meter is selected from voltage, current, or the phase relationship between current and voltage. The time-variable measurements of each meter are also picked up in time continuously. Preferably, at least two, and more preferably all three, meter are selected. More preferably, the second group includes the same number of time-variable measurements for each meter. Therefore, there may be 100 time-variable measurements for voltage. There may be 100 time-variable measurements for current. There may be 100 time-variable measurements for the phase relationship between current and voltage. In this case, preferably, only the time-variable measurements of each individual quantity are picked up in a temporally continuous manner. Therefore, for example, the first time-variable measurement for voltage, the first time-variable measurement for current, and the first time-variable measurement for the phase relationship may be picked up at the same time or directly in a continuous manner, that is, in a very narrow temporal relationship. Subsequently, the second time-variable measurement of each individual quantity is picked up temporally after the first time-variable measurement of the same individual quantity. Furthermore, the plasma state monitoring device is configured to display the first group of time-variable measurements on a first chart.The first chart is a chart without a time axis, in particular a chart for displaying complex impedance or its reciprocal, complex reflection coefficient and / or reflected output in complex form, preferably a Smith chart. “Complex” in this specification means the mathematical name for a number having a real part and an imaginary part. The plasma state monitoring device is further configured to display time-variable measurements of at least one meter from a second group on a second chart. The second chart may preferably be a chart having two axes, in which case one axis is the time axis. The time-variable measurements of the first group and the time-variable measurements of each meter in the second group are detected at least partially or completely within the same period, thereby enabling monitoring of the plasma generation system's state. The expression “partially the same period” preferably means that the first time-variable measurement of the first group and the first time-variable measurement of at least one meter in the second group are detected with a time lag of less than 500 ms, 100 ms, or 50 ms from each other. This allows the plasma generation system operator to clearly perceive the relationship between detected quantities, such as impedance, and detected measured quantities, such as voltage, current, and / or the phase relationship between current and voltage. By visualizing various equipment parameters in parallel, the operator can directly determine whether an acceptable plasma state exists. This allows the operator to intervene very quickly in adjusting the plasma generation system. If only impedance were displayed, undesirable plasma states would not be recognized or would not be immediately recognized. By displaying at least one additional measured quantity, the operator can directly obtain information on whether that additional measured quantity and the detected impedance are compatible with the desired plasma state. In this way, for example, significant damage to semiconductor products manufactured by plasma processes can be reduced or avoided.

[0014] In one advantageous modified configuration, an output device is provided. The plasma state monitoring device is configured so that an observer can view a first chart and a second chart simultaneously, that is, to display them simultaneously on, for example, the same output device. The output device may be a screen. The output device may be a single web server that is invoked by a computer and displayed on the screen.

[0015] In one advantageous modified configuration, the plasma state monitoring device is configured to detect a first group of time-variable measurements and a second group of time-variable measurements of at least one meter at a measurement point within the plasma generation system. It is particularly advantageous that both groups of time-variable measurements are detected at the same measurement point, which enables particularly good comparability.

[0016] In one advantageous modification, the measurement point can be located in the region of the input terminals of the impedance matching circuit. Alternatively, the measurement point can be located in the region of the output terminals of the impedance matching circuit. The input or output terminals may be, for example, plug-in connectors provided on the housing of the impedance matching circuit. The phrase "in the region" specifically means that the measurement point can be located less than 50 cm away from the input or output terminals, and less than 30 cm or 10 cm away. Preferably, the measurement point can be located outside the housing of the impedance matching circuit. The measurement point may also be located inside the housing of the impedance matching circuit.

[0017] In one advantageous modified embodiment, a measuring unit is provided. The measuring unit is configured to measure a second group of time-variable measurements of at least one meter, particularly in the form of multiple meters. The plasma state monitoring device may further be configured to calculate a first group of time-variable measurements from the measured time-variable measurements of at least one meter of the second group (current, voltage, and / or phase relationship between current and voltage). Preferably, complex current and complex voltage are measured, and based on these, impedance, i.e., the first group of time-variable measurements, can be calculated.

[0018] In one advantageous modified embodiment, the measuring unit is configured to measure a second group of time-variable measurements in the form of current and voltage, which are the quantities to be measured. In this case, in particular, complex values ​​related to the measured values ​​of current and voltage are obtained. The plasma state monitoring device may be configured to calculate the phase relationship from the measured current and measured voltage. In this case, time-variable measurements for current and voltage, respectively, measured simultaneously or as close together as possible in time, may be processed. Preferably, the phase value is calculated for one measurement for current and one measurement for voltage. The three time-variable measurements of the three quantities may then be plotted on a second chart. In this modified embodiment, in particular advantage, it is sufficient that the current and voltage are actually measured.

[0019] In one advantageous modification, the measuring unit may include a directional coupler. Through this directional coupler, for example, the output of an incident wave and the output of an outgoing wave may be measured. In this case, the measurement of the forward output may be related to the incident wave. In this case, the measurement of the reflected output may be related to the outgoing wave. Alternatively to the directional coupler, the measuring unit may include a current sensor and a voltage sensor.

[0020] In one advantageous modified embodiment, the measurement unit comprises a digitizer, particularly in the form of an A / D converter (analog-to-digital converter). The digitizer is configured to digitize a second group of time-variable measurements of at least one quantity to be measured. The digitizer preferably has a sample rate (sampling rate) greater than 50 kHz. The sample rate may preferably include greater than 0.5 MS / s (megasamples / second), 1 MS / s, 10 MS / s, or 100 MS / s. This ensures that rapid changes in the first group of time-variable measurements can also be detected. The digitizer is configured, in particular, to digitize time-variable measurements for current and time-variable measurements for voltage simultaneously or directly and sequentially. In this example, the digitizer may comprise an A / D converter with at least two channels or two A / D converters. The digitizer may further also comprise an FPGA and / or DSP for further mathematical processing of the digitized measurements.

[0021] In one advantageous modification, a memory device is provided. The digitization device is configured to store the second group of digitized time-variable measurements in the memory device. The memory device may be formed, for example, as a ring buffer. The plasma condition monitoring device, or in particular the digitization device, may also be configured to store the calculated phase relationship between current and voltage in the memory device. The same may apply to the first group of time-variable measurements, i.e., impedance in particular.

[0022] In one advantageous modified embodiment, the plasma state monitoring device is configured to receive a trigger signal, particularly in the form of a pulse signal from an HF generator. The plasma state monitoring device may further be configured to detect a first group of time-variable measurements and a second group of time-variable measurements having at least one measurement quantity when such a trigger signal is present. Preferably, the time-variable measurements may be detected over a specified period or continuously and designed to be displayed on first and second charts. Such detection over a specified period or continuous detection may also include storage in a memory device. In continuous detection, the memory device may be described again from the front as soon as it is fully filled. A memory device in the form of a ring buffer is therefore particularly advantageous. The plasma state monitoring device is preferably configured to trigger on the rising edge of the pulse signal from an HF generator. Basically, the plasma state monitoring device may trigger on the falling edge.

[0023] In one advantageous improved configuration, the plasma condition monitoring device is configured to continuously detect new measurements from the first and second groups and display them in the first and second charts, thereby continuously updating the first and second charts.

[0024] In one advantageous modified configuration, the plasma state monitoring device is configured to detect a predetermined number of measurements from the first and second groups each time it receives a trigger signal and to record them in the first and second charts, respectively. Thus, when the trigger signal occurs periodically, the first and second charts can be continuously updated with the instantaneous measurements from the first and second groups. "Recording in the charts" means that the plasma state monitoring device is configured to transmit the corresponding values ​​to an output device so that this output device can display those values ​​accordingly.

[0025] In one advantageous modification, the number of time-variable measurements in the first group corresponds to the number of time-variable measurements for each of the second group's measured quantities, or deviates by up to 10% from the number of time-variable measurements for each of the second group's measured quantities. Thus, for example, there may be 100 time-variable measurements for impedance, in which case preferably there may be 100 time-variable measurements for current, 100 time-variable measurements for voltage, and, for example, 100 time-variable measurements for the phase relationship between current and voltage. This makes it particularly easy to compare and contrast the individual measurements.

[0026] In one advantageous modification, the plasma state monitoring device is configured to mark at least some or all of a first group of time-variable measurements on a first chart with different features, particularly colors. In this case, the features mark the time when the first group of time-variable measurements were detected. Thus, for example, 100 time-variable measurements for impedance can be marked on the first chart in yellow or blue, depending on the time when the measurements were detected. The colors also represent different gray values. Another possibility for one feature is, for example, marking some or all of the time-variable measurements on the first chart with a different hatching. This allows the operator to directly see the order in which the first measurements were picked. This is especially true when the first chart on which the first group of measurements are marked is preferably a chart without a time axis, such as a Smith chart.

[0027] In one advantageous modified configuration, the plasma state monitoring device is configured to plot a first group of time-variable measurements on a first chart using feature transitions, particularly color transitions (including grayscale), where the feature transitions are selected such that the first group of time-variable measurements detected relatively earlier are displayed dimmer than those detected relatively later. The first group of time-variable measurements detected relatively later are displayed brighter. This can also be done in reverse.

[0028] In an advantageous improvement, the first axis of the second chart is a measured value axis, and the second axis of the second chart is a time axis. Preferably, the time axis is the abscissa and the measured value axis is the ordinate.

[0029] In an advantageous improvement, an input unit is provided and configured to detect user input. The input unit may comprise a mouse, a keyboard and / or a touch-sensitive screen. Basically, the input unit may be any device suitable for accurately moving or positioning a pointer, particularly a mouse pointer, a cursor or a marker on the screen.

[0030] In an advantageous improvement, the plasma state monitoring device is configured by the input unit to check which time-variable measured value in the first or second chart is selected by the user. Thereafter, the plasma state monitoring device is configured to visually emphasize in another chart the time-variable measured values detected within the same period as the selected time-variable measured value. In the case where the user selects the 100th time-variable measured value in the form of impedance in the first group, the plasma state monitoring device is configured to emphasize the 100th time-variable measured value of each measured quantity in the second group. Thus, the plasma state monitoring device can emphasize the 100th time-variable measured value with respect to the voltage, the current and / or the phase relationship between the current and the voltage. Conversely, the plasma state monitoring device can emphasize the 50th time-variable measured value with respect to the impedance in the first group in the case where, for example, the 50th time-variable measured value with respect to the voltage in the second group is selected. The visual emphasis may be effected, for example, by enlarging the display of each measured value. It is also possible to add a border.

[0031] In an advantageous improvement form, the plasma state monitoring device is configured to enable the user to check which of the measured values in the first group of time-variable measured values has been selected in the first chart via the input unit.

[0032] In an advantageous improvement form, the plasma state monitoring device is configured to visually emphasize, particularly enlarge and / or demarcate, the selected time-variable measured values of the first group in the first chart.

[0033] In an advantageous improvement form, the plasma state monitoring device is configured to visually emphasize the time-variable measured values of each measured quantity in the second group, which are entered in the second chart and detected within the same period as the selected time-variable measured values of the first group.

[0034] In an advantageous improvement form, the plasma state monitoring device is configured to visually emphasize the time-variable measured values of each measured quantity in the second group by enlargement display and / or demarcation. Supplementary or alternatively, the plasma state monitoring device may slide or enter a corresponding marking line at the location of each measured value having the corresponding measured quantity (current, voltage and / or phase relationship) in the second group, thereby configuring to visually emphasize this marking line.

[0035] In an advantageous improvement form, the plasma state monitoring device is configured to enable the user to check which of the measured values in the time-variable measured values of each measured quantity (current, voltage and / or phase relationship) in the second group has been selected in the second chart via the input unit.

[0036] In one advantageous modified configuration, the plasma state monitoring device is configured to confirm that the user has slid a marking line and / or cursor on a second chart along the time axis via an input unit. Supplementarily or alternatively, the plasma state monitoring device is configured to confirm that the user has marked a point and / or area on the second chart via an input unit. This allows the plasma state monitoring device to determine which measurement has been selected from the recorded time-variable measurements of each of the second group of measurements on the second chart.

[0037] In one advantageous modified form, the plasma state monitoring device is configured to visually highlight (particularly by features) selected time-variable measurements of at least one meter (voltage, current, and / or phase relationship) of the second group within the same period.

[0038] In one advantageous modified configuration, the plasma state monitoring device is configured to mark a predetermined area on a first chart. The plasma state monitoring device is further configured to highlight a first group of time-variable measurements located outside the area on the first chart. Supplementarily or alternatively, the plasma state monitoring device is configured to visually highlight in a second chart time-variable measurements of at least one second group of measurements detected within the same period as the first group of time-variable measurements located outside the area. This allows, particularly advantageously, to define an acceptable impedance range. If the first group of time-variable measurements (impedance target values) are outside the area, the corresponding second group of time-variable measurements may also be highlighted. This allows the user to directly determine whether a desired plasma state has been achieved.

[0039] In one advantageous modified form, the plasma state monitoring device is configured to visually highlight the time-variable measurements of at least one of the second group of meterings by magnification and / or by a border and / or by another feature, in particular color and / or by adding a marking immediately next to each time-variable measurement of at least one of the second group of meterings.

[0040] In one advantageous modification, the plasma state monitoring device is configured to output a warning if the time-variable measurements of the first group in the first chart are located outside the region. The warning may be acoustically and / or optically. Supplementary or alternative, the time-variable measurements of the first group and the corresponding time-variable measurements of at least one measurement of the second group can also be continuously stored in a memory device. In this case, more accurate subsequent evaluation is possible. Supplementary or alternative, the plasma state monitoring device can also be configured to switch off the HF generator or reduce its output power.

[0041] In one advantageous modification, the plasma state monitoring device is configured to mark additional regions on the first chart. The plasma state monitoring device may further be configured to switch off the HF generator or affect its output power, for example, by reducing the output power, if one time-variable measurement in the first group or a specified number of time-variable measurements in the first group are located outside the additional region.

[0042] In one advantageous modified configuration, the plasma state monitoring device is configured to define a region based on user input via an input unit. Thus, the user can indicate or input a region in which a first group of time-variable measurements (particularly impedance) are considered acceptable.

[0043] The plasma state monitoring device may optionally store various different regions for different plasma processes in its memory.

[0044] In one advantageous modified configuration, the plasma state monitoring device is configured to continuously detect time-variable measurements from a first group and time-variable measurements from a second group, and to input them into the respective first and second charts.

[0045] In one advantageous modified embodiment, the plasma state monitoring device is configured to form the time-variable measurements of a first group and the time-variable measurements of at least one meter in a second group from the averaged individual measurements. Thus, the time-variable measurements entered in the first and second charts may consist of average values ​​or include such average values.

[0046] In one advantageous modified embodiment, the plasma state monitoring device is configured to detect time-variable measurements of a third group and preferably a fourth group. The plasma state monitoring device may then be further configured to display the third group on a third chart and preferably the fourth group on a fourth chart. Preferably, the time-variable measurements of the third and / or fourth groups are picked up at different measurement points than the time-variable measurements of the first and second groups. The time-variable measurements of the third group may preferably be impedance values. The time-variable measurements of the fourth group may preferably be at least one measurement quantity selected from voltage, current and / or the phase relationship between voltage and current. The third chart may be a chart without a time axis, in particular a Smith chart. The fourth chart may have two axes, one of which is the time axis. Preferably, all the above-described configurations made for the first and second groups also apply to the third group, and especially to the fourth group.

[0047] The plasma generation system according to the present invention includes the plasma state monitoring device described at the beginning. Furthermore, it includes an impedance matching circuit, an HF generator, and at least one consumer, particularly preferably in the form of a plasma chamber. The HF generator is connected to the HF input side of the impedance matching circuit. The HF output side of the impedance matching circuit is connectable to, and particularly connected to, at least one consumer. A first group of time-variable measurements may be detected on the HF input side of the impedance matching circuit. A second group of time-variable measurements of at least one meter may also be detected on the HF input side of the impedance matching circuit.

[0048] The method according to the present invention is used to monitor a plasma generation system by a plasma state monitoring device connected to an impedance matching circuit. In this case, the plasma state monitoring device is a) A method for detecting a first group of time-variable measurements, the method for detecting a first group of time-variable measurements related to a time-continuously picked-up impedance that can be detected at one of a plurality of terminals of an impedance matching circuit, b) A method for detecting a second group of time-variable measurements of at least one measurement quantity, wherein the at least one measurement quantity is i) Voltage, ii) current; iii) Phase relationship between current and voltage It is selected from, The time-variable measurements of each quantity are picked up continuously over time. A method for detecting a second group of time-variable measurements of at least one quantifier, c) A method step of displaying a first group on a first chart and a second group on a second chart, wherein the first chart is a chart without a time axis, in particular a Smith chart, and the second chart has two axes, one of which is a time axis, and the time-variable measurements of the first group and the time-variable measurements of each measurement of the second group are detected within at least partially the same period, thereby enabling monitoring of the state of the plasma generation system. It may be configured to implement this.

[0049] Various embodiments of the present invention are described below illustratively with reference to the drawings. The same reference numerals are used for the same components. [Brief explanation of the drawing]

[0050] [Figure 1] This figure shows an embodiment of a plasma generation system comprising an HF generator, an impedance matching circuit, a plasma state monitoring device, and a plasma chamber. [Figure 2A] This figure shows two different embodiments of an impedance matching circuit. [Figure 2B] This figure shows two different embodiments of an impedance matching circuit. [Figure 3] This figure shows an example of a measurement unit. [Figure 4] This figure shows the first and second charts, which have time-variable measurements. [Figure 5] Based on Figure 4, the second chart shows that another time-variable measurement having at least one measured quantity has been selected. [Figure 6] This figure shows the first and second charts, with the first chart having a predetermined area filled in. [Figure 7] Based on Figure 6, this figure shows that multiple time-variable measurements in the first group of the first chart are located outside the region. [Figure 8] This is a flowchart illustrating methods for monitoring a plasma generation system. [Figure 9] This figure shows an embodiment of a control unit, such as a plasma state monitoring device.

[0051] Figure 1 shows a plasma generation system 100, which is used particularly for surface treatment of workpieces. In addition to surface processing by plasma processes, the plasma generation system 100 may also be used in semiconductor manufacturing processes or for laser excitation of gas lasers, such as CO2 gas lasers.

[0052] The plasma generation system 100 comprises a plasma state monitoring device 1, an impedance matching circuit 50, an HF generator 60, and a plasma chamber 70 (consumer). The HF generator 60 is electrically connected to the impedance matching circuit 50. This is done via a connecting cable 2a, which is preferably a first connecting cable 2a, in particular at least one first coaxial cable 2a. The first connecting cable 2a is connected to the output terminal 60a of the HF generator 60 and the input terminal 50a of the impedance matching circuit 50. The impedance matching circuit 50 is further electrically connected to the plasma chamber 70. This is preferably done via another, in particular a second connecting cable 2b, which is preferably a second coaxial cable 2b. In many cases, the impedance matching circuit 50 is located near the plasma chamber 70, particularly at a distance of 10 cm or less, and preferably directly on the plasma chamber 70, so that the second connecting cable 2b is also made correspondingly short and has only a few mechanical components, such as a plug and / or line connector. The second connecting cable 2b is connected to the output terminal 50b of the impedance matching circuit 50 and the input side of the plasma chamber 70. Preferably, the second connecting cable 2b is connected to an electrode inside the plasma chamber 70.

[0053] The first connection cable 2a is longer than the second connection cable 2b. Preferably, the first connection cable 2a is 2, 3, 4, 5, 6, or 7 times longer than the second connection cable 2b, or at least 8 times longer.

[0054] The plasma generation system 100 preferably includes an output device 80, which is more preferably a screen. An input unit 9 is also provided. The input unit 9 is suitable for precisely moving a cursor or marker on the output device 80. The input unit 9 may be, for example, a keyboard and / or a mouse. A touch-sensitive screen may also be considered as the input unit 9.

[0055] The plasma chamber 70 may be considered a consumer (load). Depending on the application, the plasma chamber 70 may be provided with, for example, one or more electrodes 3, and at least one of these electrodes 3 is connected to the second connection cable 2b. In Figure 1, the plasma 4 inside the plasma chamber 70 is shown as dots.

[0056] Preferably, the plasma generation system 100 further includes an optical device 90. More preferably, the optical device 90 is located inside the plasma chamber 70 and is configured to visually detect the plasma 4 and, consequently, the plasma state. The optical device 90 may be, for example, an optical conductor, such as glass fiber. While a camera may be used, it is often omitted for cost reasons. Furthermore, the lens and another protective glass may quickly fog up due to the plasma 4.

[0057] The plasma state monitoring device 1 will be described in detail below. The plasma state monitoring device 1 preferably consists of at least one processor (e.g., a microcontroller) and / or a programmable logic device, such as an FPGA (Field Programmable Gate Array).

[0058] In one embodiment, the plasma state monitoring device 1 may be used, for example, to control the impedance matching circuit 50. Therefore, the plasma state monitoring device 1 may be configured to control the impedance matching circuit 50 so that the impedance matching circuit 50 produces a specified impedance target value.

[0059] In Figure 1, the input terminal 50a of the impedance matching circuit 50 is directly marked on the housing of the impedance matching circuit 50. Essentially, the input terminal 50a also contacts the end of the first connecting cable 2a that is connected to the HF generator 60. This allows the cable impedance of the first connecting cable 2a to be taken into further consideration.

[0060] According to the present invention, the plasma state monitoring device 1 is used to detect a first group of time-variable measurements 30, in which case the first group of time-variable measurements 30 are related to an impedance detectable at the input terminal 50a or output terminal 50b of the impedance matching circuit 50. Furthermore, the plasma state monitoring device 1 may be used to detect a second group of time-variable measurements 31 of at least one meter, in which case the at least one meter is selected from voltage 32, current 33 and phase relationship 34 between voltage 32 and current 33. As will be shown in more detail later in Figure 4 and subsequent figures, the plasma state monitoring device 1 may also be configured to display the first group in a first chart 35, in which case the first chart 35 may preferably be a Smith chart. The plasma state monitoring device 1 may be further configured to display the second group on a second chart 36, in which case the second chart 36 may particularly include two axes 36a and 36b, in which case one axis 36a may preferably be a time axis.

[0061] The plasma state monitoring device 1 comprises at least one measuring unit 5. A time-variable measurement value 31 having at least one measurement quantity 32, 33, 34 of the second group may be measured by at least one measuring unit 5.

[0062] At least one measuring unit 5 is preferably located between the first connecting cable 2a and the impedance matching circuit 50. In this example, another measuring unit 6 is located between the impedance matching circuit 50 and the load 70.

[0063] Figures 2A and 2B show different embodiments of the impedance matching circuit 50. In Figure 2A, the impedance matching circuit 50 is L-shaped. In Figure 2B, the impedance matching circuit 50 is T-shaped.

[0064] In Figure 2A, the input terminal 50a of the impedance matching circuit 50 is connected to a first coil 10 (first inductance) and a second coil 11 (second inductance). The first and second coils 10 and 11 are in contact with a common node, and thus to the input terminal 50a of the impedance matching circuit 50, at their first terminals. The first coil 10 is connected to ground potential via a first capacitor 12 (first capacitor). The second coil 11 is connected to the output terminal 50b via a second capacitor 13 (second capacitor). The first and second capacitors 12 and 13 are adjustable components in the form of rotary capacitors, in particular, whose capacitance can be changed via a stepping motor. Alternatively, solid-state switches may be used to allow the capacitors to be switched on and off as quickly as possible. In particular, the plate spacing of the first and second capacitors 12 and 13 may be changed. In one embodiment, the plasma state monitoring device 1 may be configured to control each stepping motor accordingly. Basically, the control may be performed by a control device. The capacitances of the first and second capacitors 12 and 13 may be adjusted independently of each other. Preferably, the impedance matching circuit 50 does not have any further components. Naturally, the positions of the first coil 10 and the first capacitor 12 may be swapped. In this example, the first capacitor 12 is located at the input terminal 50a of the impedance matching circuit 50, and the first coil 10 is located at ground potential. Supplementary or alternative, the positions of the second coil 11 and the second capacitor 13 may be swapped. In this example, the second capacitor 13 is located at the input terminal 50a of the impedance matching circuit 50, and the second coil 11 is located at ground potential.

[0065] In Figure 2B, the input terminal 50a of the impedance matching circuit 50 is connected to the first capacitor 12. The first capacitor 12 is connected to both the first coil 10 (first inductance) and the second coil 11 (second inductance). This is done via a common node to which both the first capacitor 12 and the first and second coils 10 and 11 are connected. The first coil 10 is further connected to ground potential. The second coil 11 is connected to the second capacitor 13 (second capacitor) (in series). The second capacitor 13 is connected to the output terminal 50b of the impedance matching circuit 50. The positions of the second coil 11 and the second capacitor 13 may be swapped. In this example, the second capacitor 13 is connected to the common node, and the second coil 11 is connected to the output terminal 50b of the impedance matching circuit 50. Preferably, the impedance matching circuit 50 has no further components.

[0066] Figure 3 shows an embodiment of a possible structure of measurement unit 5 or another measurement unit 6. In this embodiment, measurement units 5 and 6 are configured to measure voltage and current in a non-contact manner.

[0067] For this purpose, each measuring unit 5,6 is equipped with a current sensor 15 and a voltage sensor 16.

[0068] However, preferably, the phase relationship between current and voltage is also measured so that the impedance and, consequently, the time-variable measurement values ​​30 of the first group can be calculated.

[0069] The current sensor 15 of measurement unit 5 and / or another measurement unit 6 is formed as a coil, specifically in the form of a Rogowski coil.

[0070] Both ends of the coil are preferably connected to each other via a shunt resistor 17. The voltage dropped through the shunt resistor 17 may be digitized by a first A / D converter 18. The first A / D converter 18 may be part of a digitization device.

[0071] The voltage sensor 16 of measurement unit 5 and / or another measurement unit 6 is preferably configured as a capacitive voltage divider. The first capacitor 19 is formed by a conductive ring 19. Alternatively, a conductive cylindrical body may be used. Corresponding first or second connecting cables 2a, 2b are guided through the conductive ring 19. The second capacitor 20 of the voltage sensor 16 configured as a voltage divider is connected to ground potential. Connected in parallel to the second capacitor 20 is a second A / D converter 21 configured to detect and digitize the voltage dropping through the second capacitor 20. The second A / D converter 21 may be part of a digitization device.

[0072] Basically, the measurement unit 5 and another measurement unit 6 may be arranged or configured on a single (common) printed circuit board. The first capacitor 19 may be formed by coatings on the first and the second opposite surface of the printed circuit board. In this example, the coatings on the first and second surfaces are electrically connected to each other by interlayer connectors. The first or second connecting cables 2a, 2b are guided through openings provided in the printed circuit board. The second capacitor 20 may be formed by separate components.

[0073] The current sensor 15, in the form of a coil, particularly a Rogowski coil, is spaced further apart from the first or second connecting cables 2a, 2b than the first capacitor 19. The coil may also be formed on the same printed circuit board by appropriate coatings and interlayer connections. The coil for current measurement and the first capacitor for voltage measurement preferably extend through a common plane.

[0074] The shunt resistor 17 may also be placed on the same printed circuit board. The same applies to the first and / or second A / D converters (analog-to-digital converters) 18, 21.

[0075] The measuring unit 5 and / or another measuring unit 6 may be formed as a directional coupler.

[0076] Figure 4 shows the first chart 35 and the second chart 36 for the measurement unit 5. The measurement unit 5 is preferably located at the input terminal 50a of the impedance matching circuit 50. In cases where another measurement unit 6 is used, preferably located at the output terminal 50b of the impedance matching circuit 50, the first chart 35 and the second chart 26 for the other measurement unit 6 may be selected via the corresponding tabs.

[0077] As explained, the measurement unit 5 makes it possible to measure the voltage 32 and the current 33. The plasma state monitoring device 1 is configured to determine the phase relationship 34 between the voltage 32 and the current 33 from the voltage 32 and the current 33. Preferably, in this way, a complex value related to the complex impedance can be determined. This complex value is each of the measured quantities of the second group of time-variable measured values ​​31. The measurement unit 5 is configured to measure a number of time-variable measured values ​​31 for the voltage 32 in sequence. These number of time-variable measured values ​​31 for the voltage 32 are plotted on the second chart 36. The second axis 36b is a time axis for representing 1000 consecutively picked time-variable measured values ​​31 for each of the measured quantities in the second group. The first axis 36a shows the corresponding values ​​for each measured quantity. Basically, various different measured quantities, namely the voltage 32, the current 33 and the phase relationship 34, may be normalized. In Figure 4, the voltage 32 of 200V and the current 33 of 7A are located at the same point on the first axis 36a.

[0078] The plasma state monitoring device 1 is configured to continuously detect a second group of time-variable measurements 31 via the measurement unit 5. The displayed measurements 31 for voltage 32 may include, for example, a number of averaged voltage values. The same may apply to current 33 and phase relationship 34.

[0079] The plasma state monitoring device 1 is further preferably configured to record each newly detected or newly averaged measurement value 31 for each of the second group of measurements in a second chart 36. If there is a predetermined number of measurement values ​​31 for each of the measurements, for example 1000, it is also possible to record new time-variable measurement values ​​31 for each of the second group of measurements in the second chart 36.

[0080] The plasma state monitoring device 1 is also configured to calculate the time-variable measurement values ​​30 of the first group from the time-variable measurement values ​​31 of the second group. In this way, the impedance can be calculated from the (complex) voltage 32 and the (complex) current 33. It is obvious that only the values ​​for the voltage 32 and current 33 obtained by the measurement unit 5 within the same period are processed by each other. In this case, the plasma state monitoring device 1 is configured to record the time-variable measurement values ​​30 of the first group in the first chart 35.

[0081] The number of time-variable measurements 30 in the first group recorded in the first chart 35 is preferably the same as the number of time-variable measurements 31 for each of the second group's measured quantities recorded in the second chart 36. Therefore, in the illustrated embodiment, preferably there are 1000 time-variable measurements 30 in the first group and 1000 time-variable measurements 31 for voltage 32, current 33, and phase relationship 34, respectively. After the first chart 35 and the second chart 36 are displayed together on the output device 80, it is extremely easy for the user to form a relationship between the displayed impedance and the displayed transitions for voltage 32, current 33, and phase relationship 34.

[0082] The plasma state monitoring device 1 preferably further includes a memory device 8, which may store time-variable measurement values ​​30 of a first group and / or time-variable measurement values ​​31 for individual measurement quantities of a second group.

[0083] Preferably, the plasma state monitoring device 1 is configured to receive a trigger signal. Such a trigger signal may be the edge of the pulse signal from the HF generator 60. After detecting such a trigger signal, a predetermined number of time-variable measurement values ​​30 of the first group and time-variable measurement values ​​31 of the second group, each having a respective measurement quantity, are detected and displayed on the output device 80 in the first or second charts 35, 36.

[0084] Figure 4 also shows that the plasma state monitoring device 1 is configured to mark at least some or all of the first group of time-variable measurements 30 on the first chart 35 with different features. Preferably, the different features are different colors. However, they may be different hatchings. The features represent the time when the first group of time-variable measurements 31 were detected. In Figure 4, the older time-variable measurements 31 of the first group are shown brighter than the newer time-variable measurements 31 of the first group.

[0085] Figure 4 also preferably shows the first legend 37 inscribed in the second chart 36. The first legend 37 is shown along the second axis 36b and includes a summary of the features. Thus, the first legend 37 changes from light to dark along the second axis 36b (time axis). This allows for a particularly simple assignment from the first chart 35 to the second chart 36 of each time-variable measurement 30 of the first group to each time-variable measurement 31 of each measurement in the second group. The user can immediately understand which time-variable measurement 30 of the first group corresponds to which time-variable measurement 31 of the second group.

[0086] Preferably, Figure 4 also shows a second legend 38 indicating various different features and information on which time-variable measurement values ​​31 from the first group correspond to each feature. In this example, the brightest feature is used for the oldest 100 time-variable measurement values ​​31. In this example, the darkest feature is used for the most recent 100 time-variable measurement values ​​31.

[0087] The plasma state monitoring device 1 is configured, via an input unit 9, to confirm which time-variable measurement values ​​30,31 of the first or second group in the first or second charts 35,26 the user has selected. In Figure 4, a pointer 39 is shown, specifically as a mouse pointer 39. This pointer 39 may be moved by the user, which may be done by the input unit 9. In Figure 4, the user has clicked, for example, the second chart 36. In the illustrated configuration, the plasma state monitoring device 1 is configured to fill in a cursor 40 and / or a marking line 41, in which case the marking line 41 is positioned across each measurement. In this example, the cursor 40 and the marking line 41 mark the point in time when the approximately 300th time-variable measurement value 31 of the second group is displayed. The marking line 41 visually highlights the corresponding measurement value of the time-variable measurement value 31 of the second group. The marking line 41 preferably extends parallel to the first axis 36a. Furthermore, it is possible to enlarge the measured quantities (voltage 32, current 33, and / or phase relationship 34) at the cursor 40 position and / or display them in a different color on the second chart 36.

[0088] Simultaneously, the plasma state monitoring device 1 is marked on the first chart 35 and is configured to visually highlight the time-variable measurements 30 of the first group that were detected within the same period as the selected time-variable measurements 31 of the second group. In Figure 4, the corresponding time-variable measurements 30 are highlighted by a border.

[0089] Basically, the user can click on the first chart 35 and select one of the time-variable measurement values ​​30 entered in this first chart 35. In this case, the plasma condition monitoring device 1 is configured to visually highlight the corresponding time-variable measurement value 31 in the second chart 36. This may be done, for example, by sliding or fading in a marking line 41. Supplementary or alternative, a cursor 40 may also be slid or faded in to the corresponding location on the time axis (second axis 36b). Each measurement value may, supplementary or alternative, be magnified and / or displayed in a different color in the second chart 36.

[0090] Figure 5 shows that the user is marking another time-variable measurement value 31 of the measured quantities voltage 32, current 33, and phase relationship 34. This may be done by sliding the cursor 40 and / or marking line 41 based on Figure 4. Thus, the user may, for example, click the cursor 40 and / or marking line 41 and slide it along the time axis (second axis 36b). Such movement is indicated by the arrow direction in Figure 4. For this purpose, the user may use a mouse and / or keyboard. It is also possible for the user to jump to another point in time on the time axis (second axis 36b) by simple keyboard input. Alternatively, another time-variable measurement value 31,30 in the second and first charts 36,35 may be selected by clicking on another point in time in the second chart 36. The plasma state monitoring device 1 is configured to visually highlight the other time-variable measurement values ​​30 of the first group in the first chart 30. The other time-variable measurement 30 was picked up within the same period as the appropriately selected time-variable measurement 31 in the second chart 36.

[0091] Figure 6 shows that the plasma state monitoring device 1 is configured to mark a region 42 on the first chart 35. This marking of region 42 may be done by moving a mouse. The corresponding corner points may be set, for example, by clicking. Region 42 may be loaded from the memory device 8. Different regions 42 may be defined depending on the plasma process. In this case, the impedance located inside region 42 is considered an acceptable impedance.

[0092] The plasma state monitoring device 1 is configured to visually highlight the first group of time-variable measurements 30 located outside the region 42 in the first chart 35. This is shown in Figure 7. This visual highlighting may be achieved by selecting a different color, size, and / or border for the first group of time-variable measurements 30 located outside the region 42. It is also possible to include an additional region 43 in which the first group of time-variable measurements 30 located outside the region 42 are situated. In this case, there may be one or more such additional regions 43.

[0093] In this regard, the plasma state monitoring device 1 may be configured to visually highlight in the second chart 36 the time-variable measurement values ​​31 of each measurement quantity in the second group that were picked up within the same period as the time-variable measurement values ​​30 of the first group in the first chart 35 located outside the region 42. In Figure 7, this visual highlighting is done by corresponding bars 44. The bars 44 extend parallel to the second axis 36b (time axis) and extend across the region where the time-variable measurement values ​​31 of the second group, located outside the region 42, are located, with the corresponding time-variable measurement values ​​30 of the first group being located. In this case, there may be one or more such bars 44.

[0094] The plasma state monitoring device 1 may be configured to store in the storage device 8 any time-variable measurement values ​​30 of the first group that are located outside the region 42, or any time-variable measurement values ​​30 of the first group that are picked up within a specified time window. In connection with this, preferably, a time-variable measurement value 31 of at least one measurement quantity of the second group is also stored in the storage device 8.

[0095] The plasma state monitoring device 1 is preferably also configured to output a warning message 45. In this example, this is an optical warning message on the output device 80. Acoustic warning messages may also be present as supplementary or alternative. The plasma state monitoring device 1 may also be configured to switch off the HF generator 60 or to affect the output power of the HF generator 60, particularly by reducing its output power.

[0096] Figure 8 shows a flowchart illustrating a method for monitoring the plasma generation system 100 using the plasma state monitoring device 1. In the first method step S1, a first group of time-variable measurements 30 are detected, in which case the first group of time-variable measurements 30 are related to time-continuously picked-up impedances detectable at the input terminal 50a or output terminal 50b of the impedance matching circuit 50. In the second method step S2, a second group of time-variable measurements 31 of at least one meter (voltage 32, current 33, and phase relationship 34) are detected, in which case the time-variable measurements 31 of each meter are picked up time-continuously. In the third method step S3, the first group is displayed on a first chart 35, in which case the first chart 35 is a chart without a time axis, in particular a Smith chart. The second group is displayed in the second chart 36, which in this case has two axes 36a and 36b, of which one axis 36b is the time axis. The time-variable measurements 30 of the first group and the time-variable measurements 31 of each measurement in the second group are detected within at least partially the same period. This allows the user to monitor the condition of the plasma generation system 100 in a particularly good manner.

[0097] Figure 9 shows a schematic diagram of an embodiment of a control unit 600, hereinafter referred to as the “control system” 600, suitable for executing instructions to implement one or more embodiments of the method in the apparatus of the present invention. For example, the control system 600 may be used to pre-implement the aforementioned method and / or plasma condition monitoring apparatus 1 according to the present invention and / or specified herein. The components shown in Figure 9 should be understood as examples only and do not limit the scope of use or functionality of hardware, software, firmware, embedded logic components or combinations of multiple such components for implementing specific embodiments of the present invention. Some or all of the illustrated components may be part of the control system 600.

[0098] In this embodiment, the control system 600 includes at least one processor 601, such as a central processing unit (CPU, DSP) or a programmable logic device (PLD, FPGA). The control system 600 may also include a main memory 603 and a data memory 608, the two memories 603 and 608 communicating with each other and with other components via a bus 640. The bus 640 may connect a display 632, one or more input devices 633, one or more output devices 634, one or more storage devices 635, and various storage media 636 to each other and to one or more devices of the processor 601, the main memory 603, and the data memory 608. All of these elements may be coupled to the bus 640 directly or via one or more interfaces 622, 623, 624, 625, 626 or adapters.

[0099] The control system 600 may have any suitable physical form, including but not limited to one or more integrated circuits (ICs), printed circuit boards (PCBs), mobile handheld devices, laptops or notebook computers, distributed computer systems, computing grids or servers. The processor 601 or central processing unit (CPU) may optionally have a cache memory unit 602 for temporarily and locally storing instructions, data or processor addresses. The processor 601 is configured to assist in the execution of instructions stored in at least one storage medium.

[0100] The memories 603 and 608 may have a variety of components, including, but not limited to, direct-access memory components such as RAM 604, particularly static RAM "SRAM", dynamic RAM "DRAM", etc., read-only components such as ROM 605, and any combination thereof. The ROM 605 may function to communicate data and instructions unidirectionally to one or more processors 601, and the RAM 604 may function to communicate data and instructions bidirectionally to one or more processors 601.

[0101] The storage device 8 may be formed as part of such memories 603, 608, or it may be formed as such memories 603, 608.

[0102] The read-only memory 608 is selectively connected bidirectionally to one or more processors 601 by a memory control unit 607. The read-only memory 608 provides additional storage capacity. Memory 608 may be used to store the operating system 609, programs 610, data 611, applications 612, application programs, and similar items. In many cases, though not always, memory 608 is a secondary storage medium (e.g., a hard disk) that is slower than primary memory (e.g., memory 603). Memory 608 may include, for example, magnetic, optical, or transistorized storage devices, solid-state storage devices (e.g., flash-based systems), or any combination of the elements described above. In appropriate cases, information memory 608 may be integrated into memory 603 as virtual memory.

[0103] Bus 640 connects numerous subsystems to each other. Bus 640 may be any bus structure among several types of bus structures under the use of numerous bus architectures, such as a memory bus, memory controller, peripheral bus, local bus, and all combinations thereof. Information and data may be displayed via display 632. Examples of display 632 include, but are not limited to, liquid crystal displays (LCDs), organic liquid crystal displays (OLEDs), cathode ray tubes (CRTs), plasma displays, and any combination thereof. Display 632 may be connected via bus 640 to processor 601, memory 603, 608, input device 633, and other components.

[0104] The output device 80 may be formed as part of such a display 632, or it may be formed as such a display 632.

[0105] Bus 640 may connect all the aforementioned components to an external network, such as a cloud 630, via a network interface 620. This network may be, for example, a LAN, WLAN, etc. The network may constitute connections to other storage media, servers, printers, and display devices. The network may have access to telecommunications equipment and the Internet. Bus 640 may connect all the aforementioned components to a graphics control unit 621 and a graphics interface 622 that can be connected to at least one display 632.

[0106] Bus 640 may connect all of the aforementioned components to an input interface 623 that can be connected to at least one input device 633. The input device may include, for example, a keypad, keyboard, mouse, pen, touchscreen, etc.

[0107] The input unit 9 may be formed as part of such an input device 633, or it may be formed as such an input device 633.

[0108] Bus 640 may connect all of the aforementioned components to an output interface 624 which can be connected to at least one output device 634. The output device 634 may have an interface to an emissive display, LED display, display such as an LCD, OLED, etc.

[0109] Bus 640 may connect all of the aforementioned components to a memory access interface 625 that can be connected to at least one storage device 635. Bus 640 may connect all of the aforementioned components to another memory access interface 626 that can be connected to at least one storage medium 636. The storage device 635 or storage medium 636 may be, for example, solid-state, magnetic memory, or optical memory, and may in particular have non-volatile memory. The storage medium may be isolated from the control system without data loss during the operation of the control system.

[0110] The display 632, input device 633, output device 634, storage device 635, and storage medium 636 may each be located outside the control system 600 or integrated within the control system 600. These elements may be connected to the control system 600 via connections to the Internet or another network interface.

[0111] The present invention is not limited to the embodiments described. Within the scope of the present invention, all described and / or illustrated features can be combined in any way.

Claims

1. A plasma state monitoring device (1) for connecting to an impedance matching circuit (50) for a plasma generation system (100), a) Detecting a first group of time-variable measurement values ​​(30), which are related to time-continuously picked-up impedances detectable at one of the multiple terminals (50a, 50b) of the impedance matching circuit (50), b) Detecting a second group of time-variable measurements (31) of at least one measurement quantity, wherein the at least one measurement quantity is i) Voltage (32), ii) current (33); iii) Phase relationship (34) between voltage (32) and current (33) It is selected from, The time-variable measured values ​​(31) of each of the aforementioned measured quantities are picked up continuously over time. A second group of time-variable measurements (31) of at least one measured quantity is detected, c) Displaying the first group on a first chart (35) and the second group on a second chart (36), wherein the first chart (35) is a Smith chart, and the second chart (36) has two axes (36a, 36b), of which one axis (36b) is a time axis, and the time-variable measured value (30) of the first group and the time-variable measured value (32) of each measured quantity of the second group are detected within at least partially the same period, thereby enabling monitoring of the state of the plasma generation system (100). It is configured in such a way, - An output device (80) is provided, - The plasma state monitoring device (1) is configured to simultaneously display the first chart (35) and the second chart (36) on the same output device (80).

2. - The plasma state monitoring device (1) according to claim 1, characterized in that the plasma state monitoring device (1) is configured to detect the time-variable measurement values ​​(30) of the first group and the time-variable measurement values ​​(31) of the second group of at least one measurement quantity at a measurement location inside the plasma generation system (100).

3. - The measurement location can be placed in the area of ​​the input terminal (50a) of the impedance matching circuit (50), or - The measurement location can be placed in the area of ​​the output terminal (50b) of the impedance matching circuit (50). A plasma state monitoring device (1) according to claim 2, characterized in that...

4. - A measuring unit (5) is provided. - The measurement unit (5) is configured to measure the second group of time-variable measurement values ​​(31) in the form of at least one of the measurement quantities, - The plasma state monitoring device (1) is configured to calculate the time-variable measurement value (30) of the first group from the measured time-variable measurement value (31) of at least one of the second group of measurement quantities. A plasma state monitoring device (1) according to claim 1 or 2, characterized in that...

5. - The measurement unit (5) is configured to measure the time-variable measurement values ​​(31) of the second group in the form of voltage (32) and current (33), - The plasma state monitoring device (1) is configured to calculate the phase relationship (34) from the voltage (32) and current (33). A plasma state monitoring device (1) according to claim 4, characterized in that...

6. - The measurement unit (5) is equipped with a directional coupler, or - The measurement unit (5) includes a current sensor (15) and a voltage sensor (16). A plasma state monitoring device (1) according to claim 4, characterized in that...

7. - The plasma state monitoring apparatus (1) according to claim 4, wherein the measurement unit comprises a digitizing device configured to digitize the time-variable measurement values ​​(31) of the second group, and the digitizing device has a sampling rate of over 50 kHz, 500 kHz, 2 MHz, 5 MHz, 50 MHz, or over 100 MHz.

8. - A plasma state monitoring device (1) according to claim 7, characterized in that a storage device (8) is provided, and the digitization device is configured to store the digitized time-variable measurement values ​​(31) of the second group in the storage device (8).

9. - The plasma state monitoring device (1) according to claim 1 or 2, characterized in that it is configured to receive a trigger signal in the form of a pulse signal from an HF generator (60), and to detect the first group of time-variable measured values ​​(30) and the second group of time-variable measured values ​​(31) of at least one measured quantity when the trigger signal is present.

10. - The plasma state monitoring device (1) according to claim 9, characterized in that when it receives a trigger signal, it detects a predetermined number of measured values ​​(30) from the first group and a predetermined number of measured values ​​(31) from the second group each time, and records them in the first and second charts (35, 36), respectively.

11. - The plasma state monitoring device (1) according to claim 1 or 2, characterized in that the number of time-variable measurement values ​​(30) in the first group corresponds to the number of time-variable measurement values ​​(31) for each of the measurement quantities in the second group, or deviates by a maximum of 10% from the number of time-variable measurement values ​​(31) for each of the measurement quantities in the second group.

12. - The plasma state monitoring device (1) according to claim 1 or 2, wherein the plasma state monitoring device (1) is configured to record at least some or all of the first group of time-variable measurement values ​​(30) on the first chart (35) with various different features, the features representing the time at which the first group of time-variable measurement values ​​(30) were detected.

13. The plasma state monitoring device (1) according to claim 12, wherein the feature is color.

14. - The plasma state monitoring device (1) is configured to record the time-variable measurement values ​​(30) of the first group in the first chart (35) by characteristic transitions, and the characteristic transitions are, a) The time-variable measurements (30) of the first group that were detected relatively earlier are displayed in a dim light, and the time-variable measurements (30) of the first group that were detected relatively later are displayed in a bright light, or b) The time-variable measurements (30) of the first group that were detected relatively earlier are displayed brightly, and the time-variable measurements (30) of the first group that were detected relatively later are displayed dimly. A plasma state monitoring device (1) according to claim 12, characterized in that it is selected in such a way.

15. The plasma state monitoring device (1) according to claim 14, characterized in that the characteristic transition is a color transition.

16. - The plasma state monitoring device (1) according to claim 1 or 2, characterized in that the first axis (36a) of the second chart (36) is a measurement axis, and the second axis (36b) of the second chart is a time axis.

17. - The plasma state monitoring device (1) according to claim 1 or 2, characterized in that an input unit (9) is provided, and the input unit (9) is configured to detect user input.

18. - The plasma state monitoring device (1) is configured to confirm, by the input unit (9), which time-variable measurement value (30, 31) in the first or second chart (35, 36) has been selected by the user. - The plasma state monitoring device (1) is configured to visually highlight the time-variable measurement values ​​(31, 30) detected within the same period as the selected time-variable measurement values ​​(30, 31) on a separate chart (36, 35). A plasma state monitoring device (1) according to claim 17, characterized in that...

19. - The plasma state monitoring device (1) according to claim 17, characterized in that it is configured to allow the user to confirm which measurement value from the first group of recorded time-variable measurement values ​​(30) has been selected on the first chart (35) via the input unit (9).

20. - The plasma state monitoring device (1) according to claim 18, characterized in that the plasma state monitoring device (1) is configured to visually highlight and display the selected time-variable measurement values ​​(30) of the first group on the first chart (35).

21. The plasma state monitoring apparatus (1) according to claim 20, characterized in that the emphasis is enlargement and / or bordering.

22. - The plasma state monitoring device (1) according to claim 18, characterized in that it is recorded on the second chart (36) and is configured to visually highlight the time-variable measurement values ​​(31) of each measurement quantity of the second group detected within the same period as the selected time-variable measurement values ​​(30) of the first group.

23. - The plasma state monitoring device (1) measures the time-variable measurement values ​​(31) of each of the second group of measurement quantities, a) To enlarge and / or display with a border, and / or b) Marking lines (41) located across each measured quantity The plasma state monitoring device (1) according to claim 22, characterized in that it is configured to visually emphasize by [something].

24. - The plasma state monitoring device (1) according to claim 17, characterized in that it is configured to allow the user to confirm which measurement value among the time-variable measurement values ​​(31) on which each of the second group of measurement quantities has been recorded has been selected in the second chart (36) via the input unit (9).

25. - The plasma state monitoring device (1) is a) Confirm that the user has slid the marking line (41) and / or cursor (40) on the second chart (36) along the time axis (36b) via the input unit (9), and / or b) Confirm that the user has marked points and / or areas on the second chart (36) via the input unit (9). It is configured in such a way, This allows the plasma state monitoring device (1) to confirm which of the time-variable measurement values ​​(31) with each of the second group's measured quantities recorded has been selected. A plasma state monitoring device (1) according to claim 24, characterized in that...

26. - The plasma state monitoring device (1) according to claim 24, characterized in that it is recorded on the first chart (35) and is configured to visually highlight the time-variable measurement values ​​(30) of the first group detected within the same period as the selected time-variable measurement values ​​(31) of the at least one measurement quantity of the second group.

27. - The plasma state monitoring device (1) is configured to mark a predetermined area (42) on the first chart (35), - The plasma state monitoring device (1) is configured to highlight the first group of time-variable measurements (30) located outside the region (42) on the first chart (35), and / or The plasma state monitoring device (1) according to claim 1 or 2, characterized in that the plasma state monitoring device (1) is configured to visually highlight in the second chart (36) the time-variable measurement values ​​(31) of the second group of at least one measurement quantity detected within the same period as the first group of time-variable measurement values ​​(30) located outside the region (42).

28. - The plasma state monitoring device (1) measures the time-variable measurement value (31) of at least one of the second group of measurements, a) Enlarge and / or display with a border, b) Display with a different feature, c) Add a marking immediately next to each of the time-variable measurement values ​​(31) of each of the measured quantities in the second group. The plasma state monitoring device (1) according to claim 27, characterized in that it is configured to visually emphasize by doing so.

29. The plasma state monitoring device (1) according to claim 28, wherein the above feature is color.

30. - The plasma state monitoring device (1) according to claim 27, characterized in that it is configured to output a warning when the time-variable measurement values ​​(30) of the first group in the first chart (35) are located outside the region (42).

31. - The plasma state monitoring device (1) according to claim 27, characterized in that the plasma state monitoring device (1) is configured to define the region (42) by user input via an input unit (9).

32. - The plasma state monitoring device (1) according to claim 1 or 2, characterized in that the plasma state monitoring device (1) is configured to continuously detect the time-variable measurement values ​​(30) of the first group and the time-variable measurement values ​​(31) of the second group and to record them in the respective first and second charts (35, 36).

33. - The plasma state monitoring device (1) according to claim 1 or 2, characterized in that the plasma state monitoring device (1) is configured to detect time-variable measured values ​​of a third group and time-variable measured values ​​of a fourth group, and the plasma state monitoring device (1) is further configured to display the third group on a third chart and the fourth group on a fourth chart.

34. In a plasma generation system (100) having a plasma state monitoring device (1) according to claim 1 or 2, - An impedance matching circuit (50) is provided. - An HF generator (60) and at least one plasma chamber (70) are provided. - The HF generator (60) is connected to the HF input side (50a) of the impedance matching circuit (50). - The HF output side (50b) of the impedance matching circuit (50) is connectable to the at least one plasma chamber (70), - The time-variable measured values ​​(30) of the first group are detected on the HF input side (50a) of the impedance matching circuit (50). - The time-variable measured values ​​(31) of the second group of at least one measured quantity are detected on the HF input side (50a) of the impedance matching circuit (50). A plasma generation system (100) characterized by the following.

35. A method for monitoring a plasma generation system (100) using a plasma state monitoring device (1) connected to an impedance matching circuit (50), wherein the plasma state monitoring device (1) is a) A method for detecting time-variable measurements (30) of the first group (S １ A method (S) for detecting a first group of time-variable measured values ​​(30) related to time-continuously picked-up impedances that can be detected at one terminal of a plurality of terminals (50a, 50b) of the impedance matching circuit (50). １ )and, b) A method for detecting a second group of time-variable measurements (31) of at least one measurement quantity (S ２ ) and the at least one measured quantity is i) Voltage (32), ii) current (33); iii) Phase relationship (34) between voltage (32) and current (33) It is selected from, The time-variable measured values ​​(31) of each of the aforementioned measured quantities are picked up continuously over time. A method for detecting a second group of time-variable measurements (31) of at least one measurement quantity (S ２ )and, c) A method (S) of displaying the first group on a first chart (35) and the second group on a second chart (36). ３ A method step (S) in which the first group is displayed on the first chart (35) and the second group is displayed on the second chart (36), wherein the first chart (35) is a Smith chart, and the second chart (36) has two axes (36a, 36b), of which one axis (36b) is a time axis, and the time-variable measured values ​​(30) of the first group and the time-variable measured values ​​(31) of each measured quantity of the second group are detected within at least partially the same period, thereby enabling monitoring of the state of the plasma generation system (100), wherein the first group is displayed on the first chart (35) and the second group is displayed on the second chart (36). ３ )and It is configured to implement the following: The plasma state monitoring device (1) is configured to perform the step of simultaneously displaying the first chart (35) and the second chart (36) on the same output device (80).