Chemically amplified positive-type resist composition and resist pattern formation method

A chemically amplified resist composition with phenolic hydroxyl group-containing units and controlled acid diffusion addresses high resolution, low LER, and development loading issues, enhancing pattern precision in EUV and EB lithography.

JP7882062B2Active Publication Date: 2026-06-30SHIN ETSU CHEMICAL CO LTD
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Patent Information

Authority / Receiving Office
JP Β· JP
Patent Type
Patents
Current Assignee / Owner
SHIN ETSU CHEMICAL CO LTD
Filing Date
2022-09-07
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

Existing chemically amplified resist compositions face challenges in achieving high resolution, low line edge roughness (LER), maintaining rectangular pattern profiles, and addressing development loading and residue defects during photomask processing, particularly in advanced lithography techniques like EUV and EB lithography.

Method used

Incorporating a polymer with phenolic hydroxyl group-containing units protected by acid-unstable groups and specific aromatic ring skeletons into the resist composition, along with controlled acid diffusion mechanisms, to enhance resolution and suppress development loading effects.

Benefits of technology

The proposed resist composition achieves high-resolution, low LER patterns with improved rectangularity and reduced development loading, suitable for advanced lithography processes such as EUV and EB lithography, ensuring precise and uniform pattern formation.

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Abstract

To provide a chemically amplified positive resist composition capable of forming a resist film having extremely high resolution, small LER, excellent rectangularity, and capable of forming a pattern with suppressed influence of development loading and defective development residue, and formation method of the resist pattern using the chemically amplified positive resist composition.SOLUTION: A chemically amplified positive resist composition contains a base polymer composed of a polymer containing a phenolic hydroxy group-containing unit represented by a specified formula which is protected by an acid labile group and becomes alkali-soluble by the action of an acid, and a repeating unit protected by an acid-labile group represented by formula (A2), wherein the content of the repeating unit having an aromatic ring skeleton is 65 mol% or more based on the whole repeating unit of the polymer contained in the base polymer.SELECTED DRAWING: None
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