Manufacturing apparatus and manufacturing method

Abstract

To provide a manufacturing apparatus and a manufacturing method, which enable a surface of a disk-shaped material-to-be-cut such as a semiconductor wafer to be ground so that variations in thickness can be reduced.SOLUTION: A manufacturing apparatus according to the present disclosure comprises: a rotor for rotating a grinding wheel for cutting a first surface of a disk-shaped material-to-be-cut; holding means that is constituted to be capable of holding a second surface of the material-to-be-cut; and displacement means that is constituted to be capable of displacing at least a part of the second surface of the material-to-be-cut in a rotational axis direction of the rotation.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] This embodiment relates to a manufacturing apparatus and a manufacturing method.

Background Art

[0002] The back surface of a semiconductor wafer such as a silicon wafer on which a semiconductor element such as an IC is formed on the surface is ground to a predetermined thickness. Techniques for grinding the back surface so that the silicon wafer or the like has a uniform thickness are known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] According to this embodiment, a manufacturing apparatus and a manufacturing method are provided that enable grinding (cutting) the surface of a workpiece formed in a disk shape such as a semiconductor wafer so that the thickness variation becomes small.

Means for Solving the Problems

[0005] This embodiment discloses a manufacturing apparatus including a rotating body for rotating a grindstone for cutting a first surface of a disk-shaped workpiece, holding means configured to be able to hold a second surface of the workpiece, and displacement means configured to be able to displace at least a part of the second surface of the workpiece in the direction of the rotation axis of the rotation; this manufacturing apparatus includes a manufacturing apparatus for a semiconductor device.

[0006] Furthermore, the present invention discloses a manufacturing apparatus comprising a grinding wheel configured to cut the first surface of a disc-shaped workpiece while rotating, a holding means configured to hold the second surface of the workpiece, and a displacement means configured to displace at least a portion of the second surface of the workpiece in the direction of the rotation axis. This manufacturing apparatus includes a semiconductor device manufacturing apparatus.

[0007] This embodiment discloses a manufacturing method in which, while holding the second surface of a disc-shaped workpiece, a grinding wheel is rotated to cut the first surface of the workpiece, information indicating the amount of material removed at multiple positions on the cut first surface is obtained, and based on the obtained information, at least a portion of the second surface of the workpiece, or the second surface of a disc-shaped second workpiece, is displaced in the direction of the rotation axis, and while holding the displaced second surface of the workpiece, or while holding the displaced second surface of the second workpiece, the grinding wheel is rotated to cut the first surface of the workpiece, or the first surface of the second workpiece. This manufacturing method includes a manufacturing method for manufacturing a semiconductor device. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a schematic diagram showing the main parts of a grinding apparatus according to one embodiment, and a plan view showing the relationship between the path through which the grinding wheel of the grinding apparatus passes and the wafer. [Figure 2] Figure 2 is a schematic diagram showing the holding part of a grinding device according to one embodiment. [Figure 3] Figure 3 is a schematic diagram showing the displacement of a wafer due to the air intake pipe of a grinding apparatus according to one embodiment. [Figure 4] Figure 4 is a plan view of the chuck table and airbag of a grinding apparatus according to one embodiment and a modified example, as seen from above where the grinding wheel is positioned. [Figure 5] Figure 5 shows the surface profile of the wafer thickness after grinding and CMP polishing. [Figure 6] Figure 6 is a schematic diagram showing the holding part of a grinding apparatus according to another embodiment. [Modes for carrying out the invention]

[0009] This embodiment will now be described with reference to the attached drawings. To facilitate understanding of the explanation, the same reference numerals are used for identical components in each drawing whenever possible, and redundant explanations are omitted.

[0010] [First Embodiment] The grinding apparatus and grinding method (an example of "cutting") according to this embodiment will be described below. In this embodiment, the workpiece to be ground is formed into a disc shape (a circular, flat shape) by bonding two or more silicon wafers together (hereinafter, the workpiece to be ground may be simply referred to as "wafer W"). After grinding the wafer W using the grinding method of this embodiment, it is polished by CMP (an example of "cutting") and then divided into multiple semiconductor devices by dicing. Therefore, the grinding apparatus and grinding method according to this embodiment are a manufacturing apparatus and manufacturing method for manufacturing semiconductor devices and other devices.

[0011] However, the present invention can also be applied to post-processing of silicon wafers and other semiconductor wafers. In this case, a semiconductor element is formed on one surface of the semiconductor wafer. In this case, the grinding apparatus according to this embodiment may be configured to grind the other surface of the semiconductor wafer.

[0012] Figure 1(A) is a schematic diagram showing the main parts of the grinding apparatus 10 according to this embodiment, and Figure 1(B) is a plan view showing the relationship between the path TR of the grinding wheel 26 of the grinding apparatus 10 and the wafer W. Figure 2 is a schematic cross-sectional view showing the holding part 30 of the grinding apparatus 10 according to this embodiment.

[0013] The grinding apparatus 10 includes a grinding section 20 for grinding the wafer W, a holding section 30 for holding the wafer W, a displacement section 40 (Figure 2) for displacing the wafer W, and a measuring section 50 for measuring the amount of grinding of the wafer W.

[0014] The grinding unit 20 includes a spindle 22 for rotating the grinding wheel 26, a wheel 24 (an example of a "rotating body") provided so as to be rotatable integrally with the spindle 22, and a grinding wheel 26 attached to the wheel 24 and configured to be able to grind the first surface WS1 of the wafer W while rotating by the spindle 22.

[0015] The holding unit 30 includes a chuck table 32 (an example of a "holding means") for holding the second surface WS2 facing the first surface WS1 of the wafer W, and a belt 34 for rotating the chuck table 32.

[0016] The displacement unit 40 includes an air suction pipe 42 and an adjustment shaft 44 (a "central displacement means") for displacing the central portion of the second surface WS2 of the wafer W in the normal direction of the second surface WS2, and an air bag 46 (an example of an "outer peripheral displacement means") configured to be able to displace the region on the outer peripheral side of the second surface WS2 in the normal direction of the second surface WS2.

[0017] The measurement unit 50 includes a non-contact gauge configured to be able to measure the thickness of the wafer W by detecting, for example, interference with reflected light. By measuring the film thickness of the wafer W during or after grinding of the wafer W, information reflecting the grinding amount can be acquired.

[0018] As will be described later, the rotation axis AX1 of the wheel 24 and the grinding wheel 26 held by the wheel 24, and the normal lines of the first surface WS1 and the second surface WS2 of the wafer W are substantially parallel. Therefore, displacing the wafer W in the normal direction of the first surface WS1 or the second surface WS2 corresponds to displacing the wafer W in the direction of the rotation axis AX1 of the grinding wheel 26. Each component of the grinding apparatus 10 will be described in detail below.

[0019] The spindle 22 of the grinding unit 20 is configured to be rotatable about the rotation axis AX1. The spindle 22 can rotate, for example, at several thousand revolutions per minute. Further, the spindle 22 is configured to be movable in the direction of the rotation axis AX1. For example, by rotating the spindle 22 while moving the spindle 22 in the direction approaching the chuck table 32 in the direction of the rotation axis AX1, it is possible to increase the grinding speed and the grinding amount of the wafer W.

[0020] The wheel 24 is configured to be rotatable integrally with the spindle 22 in order to hold and rotate the grindstone 26. The wheel 24 according to the present embodiment is formed in an annular (ring shape), and a groove is formed along the circumferential direction. By fitting a plurality of grindstones 26 into this groove while separating them from each other, the wheel 24 is configured to be able to hold the plurality of grindstones 26.

[0021] The grindstone 26 is formed, for example, in a plate shape using artificial diamond, and is formed to be curved in order to be fitted into the groove formed in the wheel 24. Note that each component of the grinding unit 20 such as the spindle 22, the wheel 24, and the grindstone 26 can be appropriately changed according to the composition of the workpiece to be machined and the machining purpose.

[0022] The chuck table 32 of the holding unit 30 is configured to be able to hold at least the second surface WS2 of the wafer W. Further, the chuck table 32 is configured to be rotatable, for example, at several hundred revolutions per minute. As shown in FIG. 1(A), the surface of the chuck table 32 facing the second surface WS2 of the wafer W is formed in a conical shape including a conical surface with an extremely small gradient having a vertex on the axis including the rotation axis AX2 of the chuck table 32 with the rotation axis AX2 of the chuck table 32 as the axis. For example, the cone including the conical surface of the chuck table 32 for holding a 300 mm wafer W has a bottom surface with a diameter of 300 mm or more and a height of 10 to 20 μm. Therefore, the inclination angle formed by the generatrix of the cone and the bottom surface is, for example, less than 0.1 degree, and the apex angle of the cone is, for example, greater than 179.9 degrees. Further, a through hole extending in the direction of the rotation axis AX2 is formed at the center including the rotation axis AX2 of the chuck table 32 in order to insert the air suction pipe 42.

[0023] As shown in Figure 1(A), in a side view, grinding is performed with the rotation axis AX2 of the chuck table 32 slightly tilted relative to the rotation axis AX1 of the wheel 24, such that one of the generatrix lines of the slightly inclined conical surface of the chuck table 32 is approximately perpendicular to the rotation axis AX1 of the wheel 24. Therefore, the rotation axis AX2 of the chuck table 32 and the rotation axis AX1 of the wheel 24 are approximately parallel (however, the inclination is exaggerated in Figure 1(A)). The holding unit 30 is equipped with a known angle adjustment means that can change the rotation axis AX2 of the chuck table 32 relative to the rotation axis AX1 of the wheel 24.

[0024] The chuck table 32 is made of, for example, a porous ceramic containing a pigment, which has a surface formed thereon including the conical surface described above.

[0025] The holding section 30 further comprises a support base 36 that supports the chuck table 32 and is configured to rotate integrally with the chuck table 32, with a ventilation pipe 36CH formed inside that communicates with the bottom surface of the chuck table 32, a belt 34 that engages with the support base 36 to rotate the support base 36 and the chuck table 32 according to the rotation axis AX2, an ejector (not shown) for generating negative pressure in the ventilation pipe 36CH, and a rotation drive unit (not shown) consisting of a motor or the like for rotating the chuck table 32. As shown in Figure 2, a through hole extending in the direction of the rotation axis AX2 is formed in the center of the support base 36 including the rotation axis AX2 for inserting an adjustment shaft 44 (described later).

[0026] With a chuck table 32 configured in this way, negative pressure is generated inside the ventilation pipe 36CH, making it possible to suck in the wafer W through the pores in the porous material communicating with the ventilation pipe 36CH (porous chuck).

[0027] The displacement unit 40 displaces at least a portion of the second surface WS2 of the wafer W, which is the workpiece to be ground, in the direction of the rotation axis AX1 and rotation axis AX2 of the wheel 24. The grinding apparatus 10 according to this embodiment includes, as displacement means, an air intake pipe 42 and an adjustment shaft 44 for displacing the central part of the wafer W in the direction normal to the surface of the wafer W, and an air bag 46 for displacing the outer peripheral region of the wafer W in the direction normal to the surface of the wafer W.

[0028] Figures 3(A) and 3(B) are schematic diagrams showing the displacement of the wafer W by the air suction pipe 42. The air suction pipe 42 (Figures 2 and 3) is configured to be displaceable in a direction that moves the region including the center of the second surface WS2 of the wafer W away from the grinding wheel 26. In this embodiment, the air suction pipe 42 is inserted into a region within a through hole formed on the rotation axis AX2 of the chuck table 32, and is configured to be displaceable in a direction that moves the region including the center of the second surface WS2 of the wafer W away from the grinding wheel 26 by generating negative pressure in the ventilation pipe 42CH formed inside when the tip surface 42TS is in close proximity to the second surface WS2 of the wafer W and sucking the wafer W. When the region including the center of the second surface WS2 of the wafer W is displaced away from the grinding wheel 26, the region including the center of the first surface WS1 is also displaced in the same direction (Figure 3(A)). Therefore, by using the air suction pipe 42 to suck the wafer W, the region including the center of the first surface WS1 of the wafer W to be ground is separated from the grinding wheel 26, making it possible to reduce the amount of grinding in this region.

[0029] Furthermore, since a chuck table 32 that sucks and holds the second surface WS2 of the wafer W is provided around the air intake pipe 42, the displacement of the wafer W is prevented. Therefore, by using the air intake pipe 42, it is possible to locally reduce the amount of grinding in a predetermined area (in this embodiment, the area including the center of the wafer W).

[0030] In this embodiment, a through-hole is formed inside the air intake pipe 42 that functions as a vent pipe 42CH. By creating a negative pressure inside this vent pipe 42CH using a known configuration such as an ejector, the wafer W can be displaced. The through-hole formed in the air intake pipe 42 is formed independently of (without communication with) the vent pipe 36CH that communicates with the bottom surface of the chuck table 32. With this configuration, it is possible to make the suction force for sucking the wafer W by the chuck table 32 and the suction force for displacing the wafer W by the air intake pipe 42 different.

[0031] In this embodiment, the tip surface 42TS of the air suction tube 42 facing the second surface WS2 of the wafer W has a smoothly curved convex surface. However, the tip surface 42TS is not limited to a convex surface. Figure 3(C) shows an air suction tube 43 according to a modified example. As shown in this figure, the tip surface 43TS of the air suction tube 43 may be formed to have a concave surface that is recessed toward the vent pipe (center). By adopting such a configuration, it is possible to increase the suction force of the air suction tube 43.

[0032] The adjustment shaft 44 is configured to allow displacement of a region including the center of the second surface WS2 of the wafer W in a direction approaching the grinding wheel 26 by moving the air intake pipe 42 in a direction approaching the grinding wheel 26 relative to the adjustment shaft 44. Specifically, the adjustment shaft 44 is equipped with an actuator (not shown) such as a servo motor or air cylinder for moving the air intake pipe 42 in the rotation axis direction, and is configured to allow movement of the air intake pipe 42 in the rotation axis direction using this actuator. In addition, a vent pipe is formed inside the adjustment shaft 44 that communicates with the vent pipe 42CH of the air intake pipe 42 and is connected to an ejector or the like to create negative pressure inside the vent pipe 42CH.

[0033] As shown in Figure 3(B), when the actuator of the adjustment shaft 44 moves the air intake pipe 42 toward the grinding wheel 26, the tip surface 42TS of the air intake pipe 42 comes into contact with the region including the center of the second surface WS2, causing the region including the center of the second surface WS2 of the wafer W to be displaced toward the grinding wheel 26. When the region including the center of the second surface WS2 of the wafer W is displaced toward the grinding wheel 26, the region including the center of the first surface WS1 is also displaced in the same direction, making it possible to increase the amount of grinding at the center of the first surface WS1 of the wafer W.

[0034] As will be described later, under normal circumstances, the variation in the thickness of the wafer W can be reduced by displacing the wafer W by 1 μm or less. Therefore, the amount of displacement of the wafer W in the normal direction by the air intake pipe 42 is 1 μm or less.

[0035] The displacement means according to this embodiment further includes an airbag 46 for displacing the region on the outer periphery side of the wafer W in the direction normal to the surface of the wafer W.

[0036] Figure 4(A) is a plan view of the chuck table 32 and airbag 46 as seen from above. Figure 4(B) is a plan view showing an airbag 47 according to a modified example. As shown in Figure 4(A), the airbag 46 is formed in an annular shape that surrounds the outer surface of the disc-shaped chuck table 32. Inside the airbag 46, a vent pipe 46CH is formed that communicates with a vacuum line BL provided in the chuck table 32 and extends in the circumferential direction. In addition, on the surface of the airbag 46 facing the second surface WS2 of the wafer W, a plurality of openings 46OP are formed, spaced apart in the circumferential direction and communicating with the vent pipe 46CH. For example, as shown in Figure 4(A), the airbag 46 has eight openings 46OP that are spaced apart at 45-degree intervals in the circumferential direction and communicate with the vent pipe 46CH. With this opening 46OP in close proximity to the outer peripheral region of the second surface WS2 of the wafer W, negative pressure is generated in the ventilation pipe 46CH via the vacuum line BL, thereby enabling the outer peripheral region of the second surface WS2 of the wafer W to be displaced in a direction away from the grinding wheel 26.

[0037] Furthermore, the airbag 46 is provided to be expandable and contractible in the direction of the rotation axis. The internal space of the airbag 46 is in communication with an air line AL provided in the chuck table 32, independently of the chuck's ventilation pipe 36CH and vacuum line BL. When gas (e.g., air) is introduced into the airbag 46 via the air line AL, increasing the air pressure inside the airbag 46, the airbag 46 expands in the direction of the rotation axis AX2, contacting the outer periphery of the second surface WS2 of the wafer W and pushing up the outer periphery, thereby displacing the outer periphery of the wafer W in a direction closer to the grinding wheel 26. On the other hand, when gas is discharged from inside the airbag 46 via the air line AL, decreasing the air pressure inside the airbag 46, the airbag 46 contracts in the direction of the rotation axis AX2, moving away from the second surface WS2 of the wafer W.

[0038] Therefore, by extending the airbag 46, it is possible to displace the outer peripheral region of the wafer W toward the grinding wheel 26, thereby increasing the amount of grinding in the outer peripheral region of the wafer W. On the other hand, by contracting the airbag 46 and generating negative pressure in the vent pipe 46CH with the opening close to the outer peripheral region of the second surface WS2 of the wafer W, the wafer W is sucked in, making it possible to displace the outer peripheral region of the wafer W toward the grinding wheel 26. For this reason, it is also possible to reduce the amount of grinding in the outer peripheral region of the wafer W.

[0039] Figure 4(B) shows a modified example in which the airbag 47 and vent pipe 47CH are divided into four sections in the circumferential direction. With this modified example, it becomes possible to independently displace the four divided sections of the outer peripheral region of the wafer W. Therefore, even when the amount of grinding varies in the circumferential direction, it becomes possible to reduce variations in thickness.

[0040] [Grinding Method] An example of a grinding method using the grinding apparatus 10 having the above configuration is described below. First, with the second surface WS2 of the wafer W placed facing each other on the conical surface of the chuck table 32, the chuck table 32 holds the wafer W by suction by creating negative pressure in the vent pipe 36CH that communicates with the bottom surface of the chuck table 32.

[0041] In this state, by driving the rotation drive unit, the chuck table 32 and the wafer W held by the chuck table 32 begin to rotate at, for example, several hundred rpm (for example, 100 to 900 rpm).

[0042] Meanwhile, the spindle 22 starts rotating at, for example, several thousand rpm (e.g., 1000-9000 rpm). Along with this, the wheel 24 and the grinding wheel 26 attached to the wheel 24 also begin rotating. The spindle 22 then moves toward the chuck table 32. At this point, in the side view shown in Figure 1(A), the rotation axis AX2 of the chuck table 32 is pre-adjusted relative to the rotation axis AX1 of the wheel 24 so that the generatrix of one side of the slightly inclined conical surface of the chuck table 32 is approximately perpendicular to the rotation axis AX1 of the wheel 24. Also, as shown in Figure 1(B), the wheel position relative to the chuck table 32 is pre-adjusted so that the grinding wheel 26 passes through the center of the first surface WS1 of the wafer W.

[0043] When the grinding wheel 26 comes into contact with the first surface WS1 of the wafer W, the grinding wheel 26 begins grinding the first surface WS1 of the wafer W. Since the wafer W is also rotating at this time, the grinding wheel 26 grinds the entire surface of the first surface WS1. As shown in Figure 1(B), the grinding wheel 26 always passes through the center of the first surface WS1 of the wafer W, and the center of the first surface WS1 of the wafer W corresponds to the position closest to the grinding wheel 26 in the path of the grinding wheel 26. Therefore, the amount of grinding in the center of the first surface WS1 of the wafer W may be larger than in other areas.

[0044] Once grinding is complete, the non-contact gauge of the measuring unit 50 measures the thickness of the wafer W by irradiating the first surface WS1 of the wafer W with light. The non-contact gauge measures the thickness of the wafer W at five different radial positions, for example, as shown in Figure 1(B): position L1 (center of the wafer W), position L2 (inner circumference of the wafer W, moved radially outward from position L1), position L3 (mid-radial part of the wafer W), position L4 (outer circumference of the wafer W, moved radially outward from position L3), and position L5 (outer circumference of the wafer W). The thickness of the wafer W corresponds to information indicating the amount of grinding done on the wafer W.

[0045] Line X1 in Figure 5(A) is an example of the surface profile of wafer W after grinding. As shown by line X1, the center of wafer W may be over-ground, resulting in the center being thinner than other areas, for example, in a range of less than 1 μm. Conversely, the center of wafer W may also be thicker than other areas, for example, in a range of less than 1 μm. Subsequently, the first surface WS1 of the wafer is polished using CMP (silicon CMP). Once polishing is complete, the optical gauge of the film thickness measuring instrument provided in the CMP polishing apparatus (or the non-contact gauge of the measuring unit 50 of the grinding apparatus 10) irradiates light onto the first surface WS1 of the wafer W to measure the thickness of the wafer W in the diametrical direction passing through five positions L1 to L5.

[0046] Line X2 in Figure 5(B) is an example of the surface profile of wafer W after CMP. As shown by line X2, in CMP polishing, the outer edge of wafer W is difficult to polish, so the outer edge may be thicker than other areas, for example, in a range of 1 μm or less. Conversely, as a result of overpolishing the outer edge of wafer W, the outer edge may be thinner than other areas, for example, in a range of 1 μm or less.

[0047] Next, based on information indicating the thickness of the wafer W at positions L1 to L5 after grinding (an example of "information indicating the amount of cutting") and / or information indicating the thickness of the wafer W at positions L1 to L5 after CMP polishing (an example of "information indicating the amount of cutting"), the amount of displacement of the center of the second surface WS2 of the wafer W by the central displacement means, the air intake pipe 42 and the adjustment shaft 44, and the amount of displacement of the outer periphery of the second surface WS2 of the wafer W by the air bag 46, which is the outer periphery displacement means, are determined. For example, the grinding apparatus 10 may have a storage device that stores an algorithm or table for determining the amount of displacement by the central displacement means and the outer periphery displacement means in relation to the thickness of the wafer W at positions L1 to L5 after grinding and polishing, and may be configured to determine the control parameters of the air intake pipe 42, the adjustment shaft 44 and the air bag 46 based on this algorithm or table.

[0048] For example, based on information indicating the thickness of the wafer W at positions L1 to L5 after grinding, if the thickness at position L1 (the center of the wafer W) is thinner than other areas, and this trend is maintained even after CMP polishing, the grinding unit 20 is configured to grind the second and subsequent wafers W with the center displacement means displacing the area including the center of the second surface WS2 of the wafer W in a direction away from the grinding wheel 26.

[0049] Furthermore, based on information indicating the thickness of the wafer W at positions L1 to L5 after CMP polishing, if the thickness at position L5 (the outer periphery of the wafer W) is thinner than that of other areas, even if the thickness at position L5 after grinding is the same as that of other areas, the grinding unit 20 is configured to grind the second and subsequent wafers W with the airbag 46, which is an outer periphery displacement means, displacing the outer periphery region of the second surface WS2 of the wafer W away from the grinding wheel 26. In this way, by displacing the wafer W during grinding performed before CMP polishing, taking into account the thickness information after CMP polishing, it is possible to reduce the variation in thickness after CMP polishing.

[0050] Line Y1 in Figure 5(A) is an example of the profile of the second wafer W after grinding, and line Y2 in Figure 5(B) is an example of the profile of the second wafer W after polishing. As shown by lines Y1 and Y2, overgrinding of the center and outer periphery of the wafer W is mitigated, making it possible to reduce variations in thickness.

[0051] Conventionally, attempts have been made to suppress variations in the amount of material being cut by means such as angle adjustment means that allow the rotation axis of the chuck table 32 to be changed relative to the rotation axis of the wheel 24. However, since these means displace the entire surface of the workpiece, adjusting the amount of material being cut in one area of ​​the surface inevitably causes fluctuations in the amount of material being cut in other areas.

[0052] According to the cutting apparatus and cutting method of this embodiment, when a part of the surface of the workpiece is displaced, the displacement of other parts is suppressed, making it possible to suppress fluctuations in the amount of material removed in other parts. Therefore, it becomes possible to cut the workpiece in such a way that the variation in thickness after cutting (after grinding or polishing) is reduced.

[0053] The embodiments have been described above with reference to specific examples. However, this disclosure is not limited to these specific examples. Modifications made to these specific examples by those skilled in the art are also included within the scope of this disclosure, as long as they retain the features of this disclosure.

[0054] For example, during the grinding of the wafer W, information indicating the thickness of the wafer W at positions L1 to L5 (information indicating the amount of grinding) may be acquired, and based on the acquired information, the second surface WS2 of the wafer W may be displaced in the direction of the rotation axis of the wheel 24, and the first surface WS1 of the wafer W may be deformed to cut the wafer W.

[0055] As mentioned above, the workpiece may be a semiconductor wafer on which semiconductor elements are formed on the second surface WS2. In this case, the grinding method disclosed in this embodiment may be applied to a subsequent process.

[0056] Furthermore, the displacement means may be configured to displace regions other than the center of the wafer W. In addition, the displacement means may be configured to displace the wafer W in only one direction (for example, only in the direction that moves the wafer W away from the grinding wheel 26).

[0057] Furthermore, the grinding apparatus 10 and grinding method according to this embodiment can be used in combination with other known grinding apparatuses 10 and grinding methods. For example, a grinding apparatus 10 and grinding method is known in which the chuck table 32 or the wheel 24 is tilted such that the rotation axis of the chuck table 32 and the wafer W has a torsional relationship with the rotation axis of the wheel 24 and the grinding wheel 26. The grinding apparatus 10 and grinding method according to this embodiment can be used in combination with other means and other grinding methods employed in such other known grinding apparatuses.

[0058] [Second Embodiment] The grinding apparatus and grinding method according to this embodiment will be described below. However, components that are understood to have the same or similar functions or configurations as those in other embodiments will be denoted by the same or similar reference numerals, and their descriptions will be omitted or simplified, with the focus being on the differences.

[0059] Figure 6 is a schematic cross-sectional view showing the holding portion of the grinding apparatus 100 according to this embodiment. As shown in the figure, the displacement portion of the grinding apparatus 100 according to this embodiment differs from the grinding apparatus 10 in that, although it is equipped with an air intake pipe 42 and an adjustment shaft 44 ("central displacement means"), it is not equipped with a configuration equivalent to an outer peripheral displacement means.

[0060] According to the grinding device 100, by using the air intake pipe 42, it is possible to displace the region including the center of the workpiece in a direction away from or towards the grinding wheel, thereby making it possible to locally reduce or increase the amount of grinding in the region including the center.

[0061] In this embodiment, the air intake pipe 42 is provided close to the region including the center of the wafer W, which is the workpiece to be cut, but this is not the only option. For example, in a cutting process where the region that is over-cut is in the radial middle section, the air intake pipe or other displacement means may be provided close to the radial middle section.

[0062] [Third Embodiment] The grinding apparatus and grinding method according to this embodiment will be described below. The displacement section of the grinding apparatus according to this embodiment differs from the grinding apparatus 10 in that it is equipped with an outer peripheral displacement means but does not have a configuration equivalent to a central displacement means.

[0063] This grinding device makes it possible to displace the outer periphery of the workpiece in a direction away from or towards the grinding wheel, thereby making it possible to locally reduce or increase the amount of grinding in the outer periphery.

[0064] The embodiments have been described above with reference to specific examples. However, this disclosure is not limited to these specific examples. Modifications made to these specific examples by those skilled in the art are also included within the scope of this disclosure, as long as they retain the features of this disclosure. The elements, their arrangement, conditions, shapes, etc., of each of the aforementioned specific examples are not limited to those illustrated and can be modified as appropriate. The elements of each of the aforementioned specific examples can be combined in different ways as appropriate, as long as no technical inconsistencies arise. [Explanation of Symbols]

[0065] AL (Airbag) Airline AX1 Wheel and grinding wheel rotation axis AX2 Chuck Table and Wafer Rotation Axis BL (for peripheral suction) vacuum line TR Route W wafer WS1 1st surface WS2 2nd surface 10 Grinding device 20 Grinding section 22 spindles 24 wheels 26 Sharpening stones 30 Holding part 32 Chuck table (holding means) 34 belts 36 Support base 36CH (for chucks) vent pipe 40 Displacement section 42. Air intake pipe (air intake tube) 42CH (for central displacement) vent pipe 42TS tip surface 44 Adjustment axis 44 46 Airbags 46OP opening hole 50 Measurement section

Claims

1. A rotating body for rotating a grinding wheel to cut the first surface of a disc-shaped workpiece, A holding means configured to hold the second surface of the workpiece, At least a portion of the second surface of the workpiece is configured to be displaceable in the direction of the rotation axis of the rotation. A manufacturing apparatus comprising a displacement means, The displacement means includes a suction portion disposed within a through hole extending in the rotational axis direction of the holding means, The suction section has a ventilation pipe formed inside and generates negative pressure, thereby displacing at least a portion of the second surface of the workpiece. The manufacturing apparatus is configured such that the suction unit moves in a direction approaching the grinding wheel and presses against the workpiece to be cut, thereby increasing the amount of grinding performed by the grinding wheel.

2. The manufacturing apparatus according to claim 1, wherein the displacement means comprises a central displacement means configured to displace the central part of the second surface in the direction of the rotation axis.

3. The manufacturing apparatus according to claim 2, wherein the central displacement means is configured to be displaceable in a direction that moves the center of the second surface away from the grinding wheel.

4. The manufacturing apparatus according to any one of claims 1 to 3, wherein the displacement means comprises an outer peripheral displacement means configured to displace the outer peripheral region of the second surface in the direction of the rotation axis.

5. The manufacturing apparatus according to claim 4, wherein the displacement means is configured to be able to displace the region on the outer periphery side of the second surface in a direction that separates it from the grinding wheel.

6. The manufacturing apparatus according to claim 1, wherein the workpiece to be cut includes a silicon wafer.

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