Purge system for ring susceptors used to clean the back side of wafers

Abstract

A method and apparatus for processing a substrate usable in semiconductor manufacturing is described. The method includes rotating a first shaft having a first bore, at least a portion of the first shaft disposed within a second shaft. The method further includes flowing a gas through a piping connected to the second bore in the second shaft. The method also includes flowing a gas through the second perforations and the first perforations into an interior of the first shaft. The method further includes flowing a gas from the interior of the first shaft to an underside of a substrate disposed in the processing chamber.

Description

Technical Field

[0001]

[0001] The embodiments described herein generally relate to an apparatus and method for introducing gas into a processing chamber, and related apparatus and methods for introducing a cleaning gas to prevent accumulation on the back side of a substrate.

Background Art

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the manufacture of integrated devices and microdevices. One substrate processing method involves depositing a material, such as a dielectric or a semiconductor material, onto the upper surface of the substrate. In a horizontal flow chamber, a processing gas is flowed parallel to the surface of the substrate positioned on a support, and the processing gas is thermally decomposed to deposit a gas-derived material onto the substrate surface, whereby the material can be deposited. However, processes such as epitaxial deposition processes can be time-consuming, costly, inefficient, and may have limited capacity and throughput. Furthermore, the hardware may require relatively large dimensions and may occupy a larger installation area within the manufacturing facility.

[0003]

[0003] Therefore, there is a need for improved apparatus and methods in semiconductor processing.

Summary of the Invention

[0004]

[0004] The embodiments described herein generally relate to an apparatus and method for introducing gas into a processing chamber, and related apparatus and methods for introducing a cleaning gas to prevent accumulation on the back side of a substrate.

[0005]

[0005] In at least one embodiment, an apparatus for use in semiconductor manufacturing is provided. The apparatus includes a first shaft having a first perforation. The apparatus further includes a second shaft having a second perforation, with at least a portion of the first shaft positioned inside the second shaft, and the first shaft rotatable relative to the second shaft. The apparatus also includes a support frame connected to the end of the first shaft. The apparatus further includes a cassette positioned above the support frame. The first and second perforations are configured to allow gas to pass through the first and second perforations as the first shaft rotates. The first shaft is configured so that gas can flow through the interior of the first shaft and contact the underside of a substrate placed on the cassette.

[0006]

[0006] In another embodiment, a substrate processing method for use in semiconductor manufacturing is provided. The method comprises rotating a first shaft having a first perforation, at least a portion of which is located within a second shaft. The method further comprises flowing gas through a pipe, which is connected to a second perforation in the second shaft. The method also comprises flowing gas into the interior of the first shaft through the second perforation and the first perforation. The method further comprises flowing gas from the interior of the first shaft to the underside of a substrate located in a processing chamber.

[0007]

[0007] In yet another embodiment, a substrate processing method for use in semiconductor manufacturing is provided. The method includes heating a substrate positioned above a substrate support. The method further includes flowing one or more processing gases over the substrate to form one or more layers on the substrate. The method also includes rotating a first shaft having a first perforation, at least a portion of which is positioned within a second shaft. The method includes flowing a cleaning gas through a connector, which is connected to a second perforation in the second shaft. The method also includes flowing the cleaning gas into the interior of the first shaft through the second perforation and the first perforation. The method further includes flowing the cleaning gas from inside the first shaft to the underside of a substrate positioned in a processing chamber.

[0008]

[0008] To enable a detailed understanding of the above-described features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be obtained by referring to embodiments. Some of these embodiments are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only typical embodiments of the Disclosure, as the Disclosure may also permit other equally valid embodiments, and therefore should not be considered to limit the scope of the Disclosure. [Brief explanation of the drawing]

[0009] [Figure 1A]

[0009] This is a schematic side cross-sectional view of a processing apparatus according to one embodiment. [Figure 1B]

[0010] This is a schematic side cross-sectional view of the processing apparatus shown in Figure 1A, according to one embodiment. [Figure 2]

[0011] This is a partial schematic side cross-sectional view of a lift assembly according to one embodiment. [Figure 3A]

[0012] This is an enlarged view of a partial schematic side cross-sectional view of the lift assembly shown in Figure 2, according to one embodiment. [Figure 3B] This is an enlarged view of a partial schematic side cross-sectional view of the lift assembly shown in Figure 2, according to one embodiment. [Figure 4A]

[0013] This is an enlarged view of a partial schematic side cross-sectional view of the lift assembly shown in Figure 2, according to one embodiment. [Figure 4B] This is an enlarged view of a partial schematic side cross-sectional view of the lift assembly shown in Figure 2, according to one embodiment. [Figure 5]

[0014] This is a flowchart showing a substrate processing method according to one embodiment. [Modes for carrying out the invention]

[0010]

[0015] The embodiments described in this book generally relate to apparatus and methods for introducing gas into a processing chamber, and related apparatus and methods for introducing cleaning gas to prevent accumulation on the back side of a substrate.

[0011]

[0016] In epitaxial deposition processes, a single substrate may be processed, or multiple substrates may be processed simultaneously. Processing a single substrate can be an inefficient use of operating time or occupy a large footprint in the manufacturing environment. One method for processing multiple substrates uses a stacked substrate configuration. In a stacked substrate configuration, the substrate cassette is positioned inside a processing chamber. This processing chamber has an upper lamp configuration and a lower lamp configuration to facilitate the deposition of processing gas onto the substrates. In this stacked configuration, the exposed underside of the substrates facilitates heat transfer from the lower lamp configuration. However, exposing the underside of the substrates to the processing gas can result in deposition on the underside of the bottommost substrate. This deposition on the underside of the bottommost substrate can prevent the lamp from heating the substrate. Therefore, an improved method is needed to reduce deposition on the underside of the bottommost substrate.

[0012]

[0017] This document describes apparatus and methods for injecting gas into a processing chamber to remove deposits on the bottom substrate. In at least one embodiment, apparatus and methods are provided for directly injecting one or more cleaning gases into the exposed back side of a substrate located on a ring susceptor. The one or more cleaning gases may be flowed through a shaft supporting the substrate (e.g., a cassette shaft or support shaft) and injected directly into the back side of the substrate from the top of the support shaft. Direct injection of one or more cleaning gases into the back side of the substrate from the support shaft prevents or reduces the accumulation of processing gases on the back side of the substrate. This improves heating through the back side of the substrate. Furthermore, the proximity of the cleaning gases injected directly from the shaft makes it possible to supply one or more cleaning gases to the back side of the substrate at a higher concentration than cleaning gases normally supplied from other areas of the processing chamber.

[0013]

[0018] Figure 1A is a schematic side cross-sectional view of a processing apparatus 100 according to one embodiment. The processing apparatus 100 includes a lift assembly 200 configured to supply cleaning gas to the back side of the substrate. The side heat sources 118a and 118b shown in Figure 1B are not shown in Figure 1A for visual clarity. The processing apparatus 100 includes a processing chamber having a chamber body 130 that defines a processing space 124.

[0014]

[0019] The cassette 1030 is positioned within the processing space 124 and is at least partially supported by a substrate support assembly 119 (e.g., a pedestal assembly). The cassette 1030 is positioned inside the first shield plate 161. The cassette 1030 includes multiple levels for supporting multiple substrates 107 for simultaneous processing such as epitaxial deposition. In the embodiment shown in Figure 1A, the cassette 1030 supports four substrates 107. The cassette 1030 can support any other number of substrates, including, but not limited to, two substrates 107, three substrates 107, six substrates 107, or eight substrates 107. In one or more embodiments, the cassette 1030 supports two substrates 107 or three substrates 107.

[0015]

[0020] The processing apparatus 100 includes an upper window 116 (e.g., a dome) positioned between the lid 104 and the processing space 124. The processing apparatus 100 also includes a lower window 115 positioned below the processing space 124. One or more upper heat sources 106 are positioned above the processing space 124 and the upper window 116. One or more upper heat sources 106 may be radiant heat sources such as lamps (e.g., halogen lamps). One or more upper heat sources 106 are positioned between the upper window 116 and the lid 104. The upper heat sources 106 are positioned to provide uniform heating of the substrate 107. One or more lower heat sources 138 are positioned below the processing space 124 and the lower window 115. One or more lower heat sources 138 may be radiant heat sources such as lamps (e.g., halogen lamps). The lower heat sources 138 are positioned between the lower window 115 and the floor 134 of the processing space 124. The lower heat source 138 is positioned to provide uniform heating of the substrate 107.

[0016]

[0021] In this disclosure, other heat sources may be used as the various heat sources described herein (in addition to or instead of lamps). For example, resistance heaters, light-emitting diodes (LEDs), and / or lasers may be used as the various heat sources described herein.

[0017]

[0022] The upper and lower windows 116, 115 may be transparent to infrared radiation, such as transmitting at least 80% (e.g., at least 95%) of infrared radiation. The upper and lower windows 116, 115 may be made of quartz material (such as transparent quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 may be a thin quartz window that partially defines the processing space 124. The outer window 194 supports the inner window 193 and is at least partially positioned within a support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 may be a thin quartz window that partially defines the processing space 124. The outer window support 188 supports the inner window 187.

[0018]

[0023] A substrate support assembly 119 is placed within the processing space 124. One or more liners 120 are placed within the processing space 124 and surround the substrate support assembly 119. One or more liners 120 allow the chamber body 130 to be shielded from the processing chemicals within the processing space 124. The chamber body 130 is at least partially placed between the upper window 116 and the lower window 115. One or more liners 120 are placed between the processing space 124 and the chamber body 130.

[0019]

[0024] The processing apparatus 100 includes a plurality of gas injection passages 182 formed within the chamber body 130 and fluidly connected to the processing space 124, and one or more gas exhaust passages 172 (multiple are shown in Figure 1A) formed within the chamber body 130 opposite to the plurality of gas injection passages 182. The one or more gas exhaust passages 172 are fluidly connected to the processing space 124. Each of the plurality of gas injection passages 182 and the one or more gas exhaust passages 172 is formed by penetrating one or more side walls of the chamber body 130 and by penetrating one or more liners 120 that cover one or more side walls of the chamber body 130.

[0020]

[0025] Each gas injection passage 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 formed in one or more liners 120 (two or three are illustrated in FIG. 1A). One or more supply conduit systems are in fluid connection with the gas injection passage 182. In FIG. 1A, an inner supply conduit system 121 and an outer supply conduit system 122 are in fluid connection with the gas injection passage 182. The inner supply conduit system 121 includes a plurality of inner gas boxes 123 attached to the chamber body 130 and in fluid connection with an inner set of the gas injection passage 182. The outer supply conduit system 122 includes a plurality of outer gas boxes 117 attached to the chamber body 130 and in fluid connection with an outer set of the gas injection passage 182. In the present disclosure, it is contemplated that various gas supply systems (e.g., supply conduit systems, gas injection passages, and / or gas boxes different from those shown in FIG. 1A) may be used.

[0021]

[0026] The processing apparatus 100 includes a flow guide structure 150 positioned within the processing space 124. The flow guide structure 150 divides the processing space into a plurality of flow levels 153. (Four flow levels are shown in FIG. 1A) In one or more embodiments, the flow guide structure 150 includes at least three flow levels 153 and a plurality of flow sections 154. (Two flow sections 154 are shown for each flow level 153 in FIG. 1A) The plurality of gas injection passages 182 are positioned as a plurality of injection levels such that each gas injection passage 182 corresponds to one of the plurality of injection levels. Each injection level is aligned with a respective flow level 153. The processing apparatus 100 includes a thermal shield structure 1060 positioned within the processing space 124. The thermal shield structure 1060 includes a first shield plate 161 and a second shield plate 1062.

[0022]

[0027] The flow guide structure 150 is formed with a plurality of distribution inlet openings 155 and a plurality of distribution outlet openings 156. The distribution outlet openings 156 are opposite to the distribution inlet openings 155. The heat shield structure 1060 is formed with a plurality of shield inlet openings 165 and a plurality of shield outlet openings 166. The flow guide structure 150 and / or the heat shield structure 1060 is formed of one or more of quartz (e.g., transparent quartz such as clear quartz or opaque quartz such as black quartz), silicon carbide (SiC), and graphite coated with SiC).

[0023]

[0028] The cassette 1030 is positioned inside the first shield plate 161. The preheating ring 111 is positioned outside the cassette 1030. The preheating ring 111 is connected to one or more liners 120 and / or at least partially supported by one or more liners 120. A part of the flow guide structure 150 can function as a preheating ring for all the flow sections 154 of each flow level 153. The preheating ring 111 may be a part of the flow guide structure 150, for example, integrated with the flow guide structure 150.

[0024]

[0029] As described below, in the present disclosure, it is considered that the flow guide structure 150 and / or the heat shield structure 1060 can be omitted.

[0025]

[0030] During a process such as an epitaxial deposition process, one or more process gases P1 are supplied to the processing space 124 through the inner supply duct system 121, the outer supply duct system 122, and the plurality of gas injection passages 182. One or more process gases P1 are supplied from one or more gas sources 196 that are fluidly connected to the plurality of gas injection passages 182. Each of the gas injection passages 182 is configured to direct one or more process gases P1 generally radially inward toward the cassette 1030. Thus, in one or more embodiments, the gas injection passages 182 can be a part of a cross-flow gas injector. The flow of one or more process gases P1 can be divided into a plurality of flow levels 153.

[0026]

[0031] The processing apparatus 100 includes an exhaust conduit system 190. One or more processing gases P1 can be exhausted through exhaust gas openings formed in one or more liners 120, exhaust gas channels formed in the chamber body 130, and then through an exhaust gas box 1091. One or more processing gases P1 can flow from the exhaust gas box 1091 to any common exhaust box 1092 and then be discharged through a conduit using one or more pumping devices 197 (e.g., one or more pressure reducing pumps).

[0027]

[0032] One or more processing gases P1 may include, for example, a purge gas, a washing gas, and / or a deposition gas. The deposition gas may include, for example, one or more reactive gases carried by one or more carrier gases. One or more reactive gases may include, for example, gases containing silicon and / or germanium (silane (SiH4), disilane (Si2H6), dichlorosilane (SiH2Cl2), and / or germane (GeH4)), chlorine-containing etching gases (hydrogen chloride (HCl)), and / or dopant gases (phosphine (PH3) and / or diborane (B2H6)). One or more purge gases may include, for example, one or more of argon (Ar), helium (He), nitrogen (N2), hydrogen chloride (HCl), and / or hydrogen (H2).

[0028]

[0033] The purge gas P2 supplied from the purge gas source 129 is introduced into the bottom region 105 of the processing space 124 through one or more purge gas inlets 184 formed in the side wall of the chamber body 130.

[0029]

[0034] One or more purge gas inlets 184 are located at a certain height below the gas injection passage 182. If one or more liners 120 are used, a section of one or more liners 120 may be located between the gas injection passage 182 and the one or more purge gas inlets 184. One or more purge gas inlets 184 are configured to direct the purge gas P2 generally radially inward. One or more purge gas inlets 184 may be configured to direct the purge gas P2 upward. During the film formation process, the substrate support assembly 119 is positioned to facilitate the flow of the purge gas P2 along a channel generally extending to the back of the cassette 1030. The purge gas P2 is located in the bottom region 105 and is exhausted out of the processing apparatus 100 through one or more purge gas exhaust passages 102 located on the opposite side of the processing space 124 compared to the one or more purge gas inlets 184.

[0030]

[0035] One or more cleaning gases P3 are supplied from the lift assembly gas source 330 and introduced from the lift assembly 200 to the underside of the cassette 1030. The cleaning gases P3 are shown in detail in Figure 2 and Figures 3A-3B.

[0031]

[0036] The substrate support assembly 119 includes a first support frame 199 and a second support frame 198 at least partially positioned around the first support frame 199. The first support frame 199 is raised and lowered by including an arm connected to the cassette 1030, thereby raising and lowering the cassette 1030. A number of lift pins 189 are suspended from the cassette 1030. By lowering the cassette 1030 and / or raising the second support frame 198, the lift pins 189 begin to contact the arm of the second support frame 198. By continuing to lower the cassette 1030 and / or raise the second support frame 198, the lift pins 189 begin to contact the substrate within the cassette 1030, thereby lifting the substrate within the cassette 1030. The bottom region 105 of the processing unit 100 is defined between the floor 134 and the cassette 1030.

[0032]

[0037] The first shaft 126 of the first support frame 199, the second shaft 125 of the second support frame 198, and section 151 of the lower window 115 extend through the bottom 135 of the chamber body 130 and through ports formed in the floor 134. As described below, the shafts 125 and 126 are each connected to one or more motors, which are configured to independently lift, lower, and / or rotate the cassette 1030 using the first support frame 199, and to independently lift and lower the lift pin 189 using the second support frame 198. The first support frame 199 includes the first shaft 126 and a plurality of first arms 1021 configured to support the cassette 1030, which includes one or more substrate supports 212. The second support frame 198 includes a second shaft 125 and a plurality of second arms 1022 configured to contact and support the lift pin 189.

[0033]

[0038] The opening 136 (substrate transfer opening) is formed by penetrating one or more side walls of the chamber body 130. The opening 136 may be used to transfer the substrate 107 to or from the cassette 1030, for example, in and out of the processing space 124. In one or more embodiments, the opening 136 includes a slit valve. In one or more embodiments, the opening 136 may be connected to any suitable valve, allowing the substrate to pass through it. For visual purposes, the opening 136 is indicated by dashed lines in Figures 1 and 2.

[0034]

[0039] The processing unit 100 includes one or more temperature sensors 191, 192, 195, such as optical pyrometers, to measure the temperature inside the processing unit 100 (e.g., the surface of the upper window 116, and / or one or more surfaces of the substrate 107, the heat shield structure 1060, and / or the cassette 1030). One or more temperature sensors 191, 192 are located on the lid 104. One or more temperature sensors 195 (e.g., the lower pyrometer) are located on the lower side of the lower window 115. One or more temperature sensors 195 may be located adjacent to and / or on the bottom 135 of the chamber body 130.

[0035]

[0040] In one or more embodiments, the upper temperature sensors 191 and 192 are located toward the top of the cassette 1030. In one or more embodiments, the side temperature sensor 131 is located toward the first shield plate 161 and / or the substrate support 212 of the cassette 1030. In one or more embodiments, the lower temperature sensor 195 is located toward the bottom of the cassette 1030.

[0036]

[0041] The processing unit 100 includes a controller 1070 configured to control the processing unit 100 or its components. For example, the controller 1070 may control the operation of the components by directly controlling the components of the processing unit 100 or by controlling controllers associated with the components. During operation, the controller 1070 enables data acquisition and feedback from each chamber to adjust and control the performance of the processing unit 100.

[0037]

[0042] The controller 1070 generally includes a central processing unit (CPU) 1071, memory 1072, and support circuitry 1073. The CPU 1071 may be one of any form of general-purpose processor available for use in an industrial environment. The memory 1072, or non-temporary computer-readable medium, is accessible by the CPU 1071 and may be one or more of the following: random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or other forms of local or remote digital storage. The support circuitry 1073 is connected to the CPU 1071 and may include a cache, clock circuitry, input / output subsystems, and power supply, etc.

[0038]

[0043] The various methods (e.g., method 500) and processes disclosed herein can generally be implemented by the CPU 1071 executing computer instruction code stored, for example, as a software routine in memory 1072 (or memory of a particular processing chamber) under the control of the CPU 1071. When the computer instruction code is executed by the CPU 1071, the CPU 1071 controls the components of the processing unit 100 and executes the processes according to the various methods and processes described herein. In one embodiment, which can be combined with other embodiments, memory 1072 (a non-temporary computer-readable medium) stores instructions, which, when executed, can cause the methods (e.g., method 500) and processes (e.g., processes 510, 520, 530, 540, 550, 560) described herein to be performed. The controller 1070 is connected to a heat source, a gas source, and / or a pressure pump of the processing unit 100, and can, for example, cause multiple processes to be performed. The controller 1070 can control the lift assembly 200 described later. The controller 1070 may, for example, control the motors 340 and 370 described later and perform at least part of method 400.

[0039]

[0044] Figure 1B is a schematic side cross-sectional view of the processing apparatus 100 shown in Figure 1A, according to one embodiment. The cross-sectional view shown in Figure 1B is rotated by 55 degrees compared to the cross-sectional view shown in Figure 1A.

[0040]

[0045] The processing apparatus 100 includes one or more side heat sources 118a, 118b (e.g., side lamps, side resistance heaters, side LEDs, and / or side lasers) located outside the processing space 124. One or more second side heat sources 118b are located across the processing space 124, opposite one or more first side heat sources 118a.

[0041]

[0046] In Figure 1B, the flow guide structure 150 and the heat shield structure 1060 are not shown for the purpose of visual clarity. Furthermore, it is assumed that in this disclosure, the flow guide structure 150 and / or the heat shield structure 1060 may be excluded from the processing apparatus 100 shown in Figures 1 and 2. In such an embodiment, one or more processing gases P1 flow from the gas injection passage 182 to the outer ring of the processing space 124, then to the outer opening 216 between the substrate supports 212 (e.g., arc-shaped supports) of the cassette 1030, and then to the gap between the substrates 107. One or more processing gases P1 are released from the gap and flow to the exhaust-side opening 216 (between and outside the substrate supports) of the substrate 107, flow to the outer ring of the processing space 124, and flow to one or more gas exhaust passages 172. The disclosure also assumes that multiple lines (such as conduits) within the processing space 124 may connect each of the gas injection passages 182 to each of the inlet openings of the cassette 1030.

[0042]

[0047] In addition to one or more temperature sensors 191, 192 located above the processing space 124 and above the second shield plate 1062, the processing apparatus 100 may include one or more temperature sensors 131 (such as optical pyrometers) that measure the temperature inside the processing apparatus 100 (e.g., the surface of the upper window 116, and / or one or more surfaces of the substrate 107, the heat shield structure 1060, the multiple windows 157, and / or the cassette 1030). The multiple windows 157, if used, may be located between or in gaps formed within one or more liners 120. One or more temperature sensors 131 are side temperature sensors (e.g., side pyrometers) located outside the processing space 124, outside the flow guide structure 150, and outside the multiple windows 157. One or more temperature sensors 131 may be radially aligned with, for example, the multiple windows 157 (shown in Figure 1B).

[0043]

[0048] One or more side temperature sensors 131 (e.g., one or more pyrometers) can be used to measure the temperature within the processing space 124 from each side of the processing space 124. The side sensors 131 are arranged within a multi-sensor level (three sensor levels are shown in Figure 1B). In one or more embodiments, the number of sensor levels is the same as the number of heat source levels. Each side sensor 131 may be positioned horizontally or directly toward the substrate support 212 at each level of the substrate 107 and the cassette 1030 (e.g., positioned downward at a certain angle).

[0044]

[0049] Figure 2 is a partial schematic side cross-sectional view of a lift assembly 200 according to one embodiment. For visual clarity, hatching for some components is not shown.

[0045]

[0050] The lift assembly 200 is connected to the processing unit 100. For example, as shown in Figure 2, the lift assembly 200 is connected to the first shaft 126, the second shaft 125, and / or section 151 of the lower window 115.

[0046]

[0051] The lift assembly 200 includes a first motor 240, which is configured to move a second support block 260 linearly. A first drive shaft 251 is connected to the first motor 240, and a second moving block 252 is positioned along the first drive shaft 251. The second moving block 252 is connected to the second support block 260 and is configured to move linearly along the first drive shaft 251. The first motor 240 is configured to rotate the first drive shaft 251, thereby moving the second moving block 252, so that the second support block 260 moves together with the second moving block 252. In one or more embodiments, the first drive shaft 251 is a second lead screw, and the second screw interface is located between the second lead screw and the second moving block 252, so that the rotation of the first drive shaft 251 causes the second moving block 252 to move linearly along the first drive shaft 251.

[0047]

[0052] The lift assembly 200 includes a support beam 265 and a mount block 266 connected to the support beam 265. The first motor 240 is connected to the mount block 266.

[0048]

[0053] The support beam 265 is connected to the base block 268, which is connected to the base frame 269. The base frame 269 attaches the lift assembly 200 to the structure. For example, the base frame 269 may be connected to the main frame of a cluster tool.

[0049]

[0054] The lift assembly 200 includes a second motor 270 connected to a first support block 230. In one or more embodiments, the second motor 270 moves linearly along with the linear movement of the first support block 230.

[0050]

[0055] The first support block 230 supports the first shaft 126 of the first support frame 199, so that linear movement of the first support block 230 causes linear movement of the first support frame 199, raising and lowering the first support frame 199. In one or more embodiments, the first shaft 126 is connected to the first support block 230, for example, using fasteners and / or overlapping shoulder interference fits. In the embodiment shown in Figure 2, the first shaft 126 includes an inner rod 226a and an outer rod 226b. Each of the rods 226a and 226b may include one or more components that are integrally formed or connected together. Each of the shafts 125 and 126 may include one or more components that are integrally formed or connected together.

[0051]

[0056] The second support block 260 supports the second shaft 125. The linear movement of the second moving block 252, driven by the first motor 240 which rotates the first drive shaft 251, causes the second support block 260 to move linearly. The first motor 240 is configured to move the second moving block 252 and the second support block 260 linearly (e.g., up and down). In one or more embodiments, the second shaft 125 is connected to the second support block 260 by, for example, fasteners and / or overlapping shoulder interference fits.

[0052]

[0057] The second motor 270 is configured to rotate the first shaft 126 of the first support frame 199 using a rotor 271 connected to the first shaft 126. The rotor 271 and the first shaft 126 are configured to rotate within the range of the first support block 230 and relative to the first support block 230. The second motor 270 can rotate the first support frame 199 during the deposition process (such as the epitaxial deposition process).

[0053]

[0058] Motors 240 and 270 may each include, for example, electric motors (such as servo motors). Other types of motors are also possible for motors 240 and 270. The first motor 240 may be a rotary motor or a linear motor. The second motor 270 may be a rotary motor.

[0054]

[0059] The lift assembly 200 includes one or more position sensors 289 configured to measure the vertical position of the first support frame 199 and / or the second support frame across multiple positions. These multiple positions may include, for example, the processing position, transport position, and initial rotation position of the first support frame 199. One or more position sensors 289 are connected to a controller 220. When one or more position sensors detect the initial rotation position of the first support frame 199, the controller 220 automatically commands the second motor 270 to begin rotating the first support frame 199 (and cassette 1030). Because the initial rotation position is vertical between the processing position and the transport position, the first support frame 199 passes through the initial rotation position while being lifted from the transport position toward the processing position. The multiple positions may include a home position between the initial rotation position and the transport position.

[0055]

[0060] The first sealing sleeve 281 is positioned between the first support block 230 and the second support block 260, and the second sealing sleeve 282 is positioned between the second support block 260 and the end flange 283 of the lift assembly 200. The second shaft 125 is in contact with the shoulder of the support ring 284. The clamp ring 285 connects the support ring 284, the first sealing sleeve 281, and the second sealing sleeve 282 to the second support block 260. The clamp ring 285 can be secured to the second support block 260 using one or more fasteners. Each of the first sealing sleeve 281 and the second sealing sleeve 282 may include a bellows, such as a bellows made of a metallic or metallized material.

[0056]

[0061] Figures 3A and 3B are enlarged views of the box in Figure 2, showing a partial schematic side cross-sectional view of the lift assembly 200 according to one embodiment.

[0057]

[0062] The first shaft 126 has a perforation 326, and the second shaft 125 has a perforation 325. When the first shaft 126 rotates, the perforation 326 aligns with the perforation 325 in the second shaft 125. The lift assembly gas source 330 is connected to the gas piping 310. When the perforations 325, 326 are aligned, the gas from the lift assembly gas source 330 travels upward up the first shaft 126 and into the processing apparatus 100. The gas flows through the first shaft 126 and comes into contact with the underside of the bottom substrate 107. The gas is then exhausted through the gas exhaust passage 172. A diagram of the aligned perforations 325, 326 is shown in Figure 3A. Because the perforations 325, 326 are aligned, the cleaning gas P3 can flow through the first shaft 126 towards the underside of the bottom substrate 107. Furthermore, the rotation of the first shaft 126 causes the perforations 325 and 326 to become misaligned, as shown in Figure 3B. Because the perforations 325 and 326 are misaligned, the cleaning gas P3 is blocked by the solid portion of the first shaft 126 and cannot flow toward the underside of the bottommost substrate 107.

[0058]

[0063] The holes 325 and 326 align or become misaligned as the first shaft 126 rotates within the second shaft 125. Different rotational speeds may affect the flow rate of cleaning gas into the processing apparatus 100. It is assumed that a constant flow of cleaning gas can be supplied to the processing apparatus 100 by the first shaft 126 rotating to a certain position within the second shaft 125 and being held in that position. Similarly, it is assumed that no flow of cleaning gas will occur from the lift assembly gas source 330 to the processing apparatus 100 by the first shaft 126 rotating to a certain position within the second shaft 125 and being held in that position.

[0059]

[0064] In Figures 3A and 3B, the gas piping 310 is connected to the lift assembly 200 through the end flange 283. It is conceivable that the gas piping 310 may be connected at different locations on the lift assembly 200. In Figures 3A and 3B, the gas piping 310 is shown entering on one side of the lift assembly 200. However, it is conceivable that the gas piping 310 may enter at multiple locations within the lift assembly 200. In some embodiments, the gas piping 310 may be permanent or commercially available semi-permanent piping. In some embodiments, the gas piping 310 may be able to flexibly adapt to movement within the lift assembly 200.

[0060]

[0065] The perforations 325 and 326 may have some regular or irregular shape. The perforations may be sized small or large based on the desired flow rate and velocity of gas into the processing apparatus 100. In one embodiment, which can be combined with other embodiments, the perforations 325 and 326 may be in the range of 2 mm to 6.35 mm.

[0061]

[0066] The perforations 325 and 326 are angled, and this angle is formed between the perforations 325 and 326 and the first and second shafts 125 and 126. This angle can guide gas into the processing chamber in the range of 0 to 90 degrees or 30 to 60 degrees. In one embodiment, the angle of the perforations 325 and 326 is 45 degrees.

[0062]

[0067] In Figures 3A and 3B, only two perforations 325 and 326 are shown, but it is conceivable that multiple perforations 325 and 326 may be located around the first and second shafts 125 and 126. More perforations 325 and 326 may be used to introduce more gas into the processing device 100. It is also conceivable that the first and second shafts 125 and 126 each have a single perforation 325 or 326. Fewer perforations 325 and 326 may be used to improve the structural integrity of the first and second shafts or to reduce the amount of gas introduced into the processing device 100. Multiple perforations 325 and 326 may be spaced regularly or irregularly around the first and second shafts 125 and 126. In one embodiment, the plurality of holes 325, 326 include four holes 325 located along the circumference of the first shaft 126 and four holes 326 located along the circumference of the second shaft 125. Furthermore, it is assumed that the plurality of holes 325, 326 may be located vertically along the first and second shafts 125, 126. The plurality of vertical holes 325, 326 may be used to accommodate linear movement in the first shaft 126.

[0063]

[0068] In Figures 2 and 3A-3B, the first shaft 126 is shown as completely hollow. However, as shown in Figures 4A-4B, for example, it is conceivable that part of the first shaft 126 is hollow and part of it is solid. In one embodiment, part of the first shaft 126 below the second perforation 326 is solid, and part of the first shaft 126 above the second perforation 326 is hollow.

[0064]

[0069] The lift assembly gas source 330 supplies cleaning gas. This cleaning gas may include etching gas, purging gas, or a combination of etching gas and purging gas. The lift assembly gas source 330 is configured to supply cleaning gas to the gas piping 310 connected to the borehole 325. This cleaning gas may include etching gas, purging gas, or a combination of etching gas and purging gas. The etching gas may be HCl or Cl2. The purging gas may include one or more of argon (Ar), helium (He), nitrogen (N2), hydrogen chloride (HCl), and / or hydrogen (H2).

[0065]

[0070] Figures 4A to 4B are enlarged views of a partial schematic side cross-sectional view of the lift assembly 200 shown in Figure 2, according to one embodiment. The configuration of the lift assembly 200 shown in Figures 4A to 4B can be combined with the configuration of the lift assembly 200 shown in Figures 3A to 3B.

[0066]

[0071] In Figures 4A and 4B, the first shaft 126 is mostly solid, except for the hollow central portion 126a which extends upward to the perforation 326 and the processing device 100. The perforation 326 penetrates the solid portion of the first shaft 126 and extends into the hollow central portion 126a. In Figures 4A and 4B, the hollow central portion 126a has its lowest point aligned with the perforation 326. It is assumed that the hollow central portion 126a may extend below the perforation 326.

[0067]

[0072] The diameter of the hollow central portion 126a is assumed to be larger or smaller than that shown in Figure 4A.

[0068]

[0073] Figure 4A shows the aligned perforations 325 and 326. Because the perforations 325 and 326 are aligned, the cleaning gas P3 can flow through the first shaft 126 toward the processing device 100. Furthermore, due to the rotation of the first shaft 126, the perforations 325 and 326 become misaligned, as shown in Figure 4B. Because the perforations 325 and 326 are misaligned, the cleaning gas P3 is blocked by the solid portion of the first shaft 126 and cannot flow toward the processing device 100.

[0069]

[0074] Figure 5 is a flowchart showing a processing method 500 for a processing substrate according to one embodiment. Method 500 may be performed using a processing apparatus 100.

[0070]

[0075] Step 510 includes heating the substrate in a cassette located on the substrate support (for example, a cassette 1030 located on the substrate support assembly 119). Step 510 may be performed before, simultaneously with, or after steps 520, 530, 540, 550, and / or step 560.

[0071]

[0076] Step 520 includes flowing one or more process gases over a substrate (e.g., substrate 107) in a cassette to form one or more layers on the substrate. Step 520 may be performed before, simultaneously with, or after steps 510, 530, 540, 550, and / or step 560. In one embodiment, which can be combined with other embodiments, one or more process gases are supplied to a processing space (e.g., processing space 124) at a pressure of 300 Torr or more (e.g., in the range of 300 Torr to 600 Torr). In one embodiment, which can be combined with other embodiments, one or more process gases are supplied at a flow rate of less than 5,000 standard cubic centimeters / minute (SCCM). In one embodiment, which can be combined with other embodiments, the substrate rotates at a rotational speed of less than 8 revolutions per minute (RPM) while one or more process gases flow over the substrate. In one example, which can be combined with other examples, the rotational speed is 1 RPM.

[0072]

[0077] Step 530 includes exhausting one or more process gases through an exhaust outlet (e.g., exhaust conduit system 190) at least partially formed in the side wall. Step 530 may be performed before, simultaneously with, or after steps 510, 520, 540, 550, and / or 560.

[0073]

[0078] Step 540 includes introducing one or more cleaning gases through the process gas inlet. Step 540 may be performed before, simultaneously with, or after steps 510, 520, 530, 550, and / or 560. The one or more cleaning gases may include etchant gas, purge gas, or a mixture of both.

[0074]

[0079] Step 550 includes flowing one or more cleaning gases through a lift assembly (e.g., lift assembly 200). Step 550 may be performed before, simultaneously with, or after steps 510, 520, 530, 540, and / or step 560. The one or more cleaning gases may include cleaning gases, purging gases, or a mixture thereof. The one or more cleaning gases are led to the lift assembly and delivered through a first shaft to the underside of the bottommost substrate. The rotation of the first shaft aligns the holes in the first and second shafts, thereby allowing the cleaning gases to flow into the processing chamber. Flowing one or more cleaning gases through the lift assembly in step 550 and flowing one or more cleaning gases through the processing gas inlet in step 540 may occur simultaneously, in periodic rotations, partially overlapping, or sequentially, with either step 540 or 550 occurring first. Furthermore, in step 550, the flow of one or more cleaning gases through the lift assembly and the flow of one or more processing gases onto the substrate may occur simultaneously, in a periodic rotation, partially overlapping, or sequentially, with either step 530 or 550 occurring first.

[0075]

[0080] Step 560 includes exhausting one or more cleaning gases through an exhaust passage. Step 560 may be performed before, simultaneously with, or after steps 510, 520, 530, 540, and / or step 550. Step 560 may be a continuous or intermittent process. Cleaning gases may be introduced in steps 540 and 550 but exhausted in step 560. In other embodiments, steps 540 and 550 may be performed for a certain period of time before the exhaust of cleaning gases begins in step 560. In other embodiments, steps 540 and 550 may be performed and completed before step 560 begins.

[0076]

[0081] While the above description applies to embodiments of the present disclosure, other embodiments and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure. The scope of the present disclosure is determined by the following claims.

Claims

1. Equipment usable in semiconductor manufacturing, A first shaft having a first perforation, A second shaft having a second perforation, wherein at least a portion of the first shaft is positioned inside the second shaft, and the first shaft is rotatable relative to the second shaft. A support frame connected to the end of the first shaft, and A cassette positioned above the support frame, wherein the first and second perforations are configured such that gas can pass through them when the first shaft rotates, and the first shaft is configured such that the gas can flow through the inside of the first shaft and contact the underside of a substrate placed on the cassette. A device including a device.

2. The apparatus according to claim 1, wherein the first perforation is a first plurality of perforations, and the second perforation is a second plurality of perforations, wherein at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the gas to enter the interior of the first shaft.

3. The apparatus according to claim 1, wherein the first hole is at a first angle with respect to the surface of the first shaft, and the second hole is at a second angle with respect to the surface of the second shaft, and the first angle and the second angle are between 0° and 90°.

4. The apparatus according to claim 1, further comprising a connection between the second puncture and the gas source.

5. The apparatus according to claim 4, wherein the connection is a permanent or semi-permanent pipe.

6. A method for processing substrates usable in semiconductor manufacturing, Rotating a first shaft having a first perforation, wherein at least a portion of the first shaft is located within a second shaft. The process involves flowing gas through a pipe, wherein the pipe is connected to a second bore in the second shaft, and the process involves flowing gas through a pipe. The gas is to be passed through the second and first perforations into the interior of the first shaft, and The gas is flowed from the inside of the first shaft to the underside of the substrate placed in the processing chamber. Methods that include...

7. The method according to claim 6, wherein the circuit board is arranged on a cassette.

8. The method according to claim 6, wherein the first perforation is a first plurality of perforations, and the second perforation is a second plurality of perforations, wherein at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the gas to enter the interior of the first shaft.

9. The method according to claim 6, wherein the gas is a cleaning gas, a purging gas, or a combination thereof.

10. The method according to claim 6, further comprising flowing a second gas through a processing gas inlet.

11. The method according to claim 10, wherein the second gas is a cleaning gas.

12. The method according to claim 11, wherein the flow of the second gas occurs after the flow of the gas through the interior of the first shaft to the lower side of the substrate is completed.

13. The method according to claim 6, further comprising exhausting the gas through an exhaust outlet.

14. A method for processing substrates usable in semiconductor manufacturing, Heating the substrate located on top of the substrate support, To form one or more layers on the substrate, one or more processing gases are flowed over the substrate. Rotating a first shaft having a first perforation, wherein at least a portion of the first shaft is located within a second shaft. A method of flowing cleaning gas through a connection, wherein the connection is connected to a second bore in the second shaft, The cleaning gas is flowed into the interior of the first shaft through the second and first perforations, and The cleaning gas is flowed from the inside of the first shaft to the underside of the substrate placed in the processing chamber. Methods that include...

15. The method according to claim 14, wherein the substrate is arranged on a cassette, and the cassette is arranged on the substrate support.

16. The method according to claim 14, wherein the first perforation is a first plurality of perforations, and the second perforation is a second plurality of perforations, wherein at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the cleaning gas to enter the interior of the first shaft.

17. The method according to claim 14, wherein the cleaning gas is an etchant gas, a purge gas, or a combination thereof.

18. The method according to claim 14, wherein at least part of the flow of one or more processing gases is completed before the cleaning gas is flowed through the connection.

19. The method according to claim 14, wherein the flow of one or more processing gases is completed before the flow of the cleaning gas through the connection.

20. The method according to claim 14, further comprising exhausting the cleaning gas through an exhaust outlet.

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