Substrate processing device and method for operating same

The substrate processing apparatus addresses inefficiencies in thin film deposition by using a rotatable and vertically movable support structure with gas confinement areas, enhancing deposition efficiency through controlled gas interaction with substrates.

WO2026141779A1PCT designated stage Publication Date: 2026-07-02WONIK IPS CO LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
WONIK IPS CO LTD
Filing Date
2025-03-28
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

Existing substrate processing devices face challenges in improving thin film deposition efficiency when processing multiple substrates simultaneously, as process gases often mix and diffuse within the chamber, leading to inefficiencies.

Method used

A substrate processing apparatus with a rotatable and vertically movable substrate support structure and a gas injection system that includes process, purge, separation, and curtain gas injection units, forming gas confinement areas to isolate and confine process gases, ensuring they only interact with the substrates within defined zones.

Benefits of technology

The solution enhances thin film deposition efficiency by confining process gases within specific areas, preventing diffusion and ensuring gases participate effectively in film formation, thereby improving the overall processing efficiency.

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Abstract

In the disclosed substrate processing device, a purge gas injection unit is installed closer to a susceptor plate than a process gas injection unit. Accordingly, a gas confinement region that confines respective process gases is formed in each process region, and a thin-film deposition process based on process gas injection is performed while the substrates are within the gas confinement region, thereby improving thin-film deposition efficiency on the substrates.
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