Method for manufacturing liquid crystal display panels

Abstract

To provide a display device that can deal with diversified applications and has the improved convenience.SOLUTION: A housing and a flexible display panel are provided. The housing includes an upper surface, a front surface, and a lower surface. The flexible display panel is disposed ranging from the upper surface side of the housing to the front surface and lower surface side thereof. The flexible display panel includes a first display region on the front surface side of the housing, and a second display region on the upper surface side of the housing. Each of the first display region and the second display region includes a thin film transistor and a pixel electrode layer electrically connected to the thin film transistor. A semiconductor layer of the thin film transistor includes an oxide semiconductor.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] This invention relates to a liquid crystal display device and a method for manufacturing a liquid crystal display device. [Background technology]

[0002] In recent years, display devices have been used in a variety of locations and applications, and the specific requirements associated with them have changed. The types and shapes of these devices are also becoming more diverse. Therefore, the development of display devices with functionality tailored to specific purposes is progressing. It is being criticized.

[0003] For example, attempts have been made to reduce weight by using plastic substrates to form liquid crystal panels. (For example, see Non-Patent Document 1.) [Prior art documents] [Non-patent literature]

[0004] [Non-Patent Document 1] Akihiko Asano, Tomoatsu Kinoshita, 2002 SID DIGEST, pp. 1196-1199. [Overview of the project] [Problems that the invention aims to solve]

[0005] Therefore, to provide a liquid crystal display device that can accommodate a wider range of applications and offers improved convenience. One of the objectives is to produce liquid crystals with a shape suitable for the purpose without complicating the manufacturing process. One of the objectives is to manufacture a display device. [Means for solving the problem]

[0006] In the manufacturing process of liquid crystal display devices, after the electrode layer and element layer are fabricated, the shape of the liquid crystal display device is formed. Then, processing is performed to add high functionality.

[0007] The shape of the liquid crystal display can be freely determined by selecting the shape to be molded. Therefore, it is possible to manufacture liquid crystal display devices in a variety of shapes to suit various locations and applications. This enables the provision of highly convenient liquid crystal display devices.

[0008] One embodiment of the invention disclosed herein comprises a retaining member which is at least partially bent, and a pair It has a liquid crystal display panel in which liquid crystal material is sealed between flexible substrates and is in contact with a holding member.

[0009] Another embodiment of the configuration of the invention disclosed herein has a bend along one side and sandwiches the bend. Then, a holding member having a first surface on one side and a second surface on the other, and liquid crystal is sealed between a pair of flexible substrates. It has a liquid crystal display panel that is inscribed within the holding member, and a first display area and A second display area is formed on the second surface of the holding member.

[0010] Another embodiment of the configuration of the invention disclosed herein has a bent portion and on one side of the bent portion is A holding member having one side facing the other and a second side, and a pair of flexible substrates with liquid crystal material sealed and held between them. It has a liquid crystal display panel inscribed within a component, and the liquid crystal display panel has a continuous first display area It has a second display area and a third display area, and the first display area faces the first surface of the holding member. The second display area faces the second surface of the holding member, and the third display area faces the bent portion It faces [the sky].

[0011] Another embodiment of the configuration of the invention disclosed herein is a first substrate that is at least partially bent and , a second substrate which is fitted to the first substrate via a spacer, and the first substrate formed by the spacer It has a liquid crystal material sealed in the gap between a first substrate and a second substrate.

[0012] Another form of the structure of the invention disclosed in this specification is a first substrate at least partially bent and , a second substrate fitted to the first substrate via a spacer, and a liquid crystal material enclosed in the gap between the first substrate and the second substrate formed by the spacer. A first display area is formed on one surface sandwiching the bent part, and a second display area is formed on the other surface. And a third display area is formed on the bent surface. The first display area and the second display area may be generally planar , and the plane formed by the first display area and the plane formed by the second area may be generally perpendicular .

[0013] Also, a method for manufacturing the liquid crystal display panel having the above structure is also included in one form of the present invention.

[0014] In the above structure, a protective film may be formed on the liquid crystal display device. The protective film may be formed so as to cover the outside of the liquid crystal display panel as well, or may be formed between the first substrate and the second substrate and the liquid crystal layer respectively.

[0015] Also, a sensor unit may be provided in the liquid crystal display device. For example, a touch sensor (touch panel) or the like can be provided on the holding member on the viewing side.

[0016] In the case of a transmissive liquid crystal display device, a backlight may be provided so as to irradiate the display area. The backlight preferably has a bent portion in accordance with the shape of the liquid crystal display device.

[0017] Note that the ordinal numbers attached as the first and the second are used for convenience and do not indicate the process order or the stacking order. Also, they do not indicate unique names as matters for specifying the invention in this specification.

[0018] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. This term encompasses a wide range of electronic devices, including electro-optical devices, semiconductor circuits, and electronic equipment. [Effects of the Invention]

[0019] The shape of the liquid crystal display can be freely determined by selecting the shape to be molded. Therefore, it is possible to manufacture liquid crystal display devices in a variety of shapes to suit various locations and applications. This enables the provision of highly convenient liquid crystal display devices. [Brief explanation of the drawing]

[0020] [Figure 1] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 2] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 3] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 4] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 5] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 6] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 7] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 8] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 9] A diagram illustrating a liquid crystal display device. [Figure 10] A diagram illustrating a liquid crystal display module. [Figure 11] A diagram illustrating the method for manufacturing a liquid crystal display device. [Figure 12] A diagram illustrating a liquid crystal display module. [Figure 13] A diagram illustrating semiconductor elements applicable to liquid crystal display devices. [Figure 14] A diagram illustrating an example of a mobile phone using a liquid crystal display. [Figure 15] A diagram illustrating an example of a mobile phone using a liquid crystal display. [Modes for carrying out the invention]

[0021] The embodiments will be described in detail with reference to the drawings. However, the following description is not limited to the present invention. The form and details can be changed in various ways without departing from the gist and scope thereof, as is the case for those skilled in the art. Therefore, it is easy to understand. Accordingly, the description of the embodiment shown below should be interpreted as being limited to the following. It is not the case that... The same reference numeral is used consistently across different drawings for parts that are repeated, and explanations of their repetition are omitted.

[0022] (Embodiment 1) A liquid crystal display device will be explained using Figures 1 to 3.

[0023] Figures 1 to 3 are cross-sectional views illustrating a method for manufacturing a liquid crystal display device.

[0024] A liquid crystal display device comprises at least a liquid crystal layer, a pair of substrates sandwiching the liquid crystal layer, and a voltage applied to the liquid crystal layer. It has an electrode layer to which the electrode is applied. A semiconductor element may also be provided, preferably a thin film. A transistor is used. In the case of an active-matrix liquid crystal display, each pixel A thin-film transistor for driving the device is provided.

[0025] In this embodiment, an example of an active-matrix liquid crystal display device is shown, but a passive matrix... This embodiment can also be applied to RIX-type liquid crystal display devices.

[0026] In this embodiment, in the process of manufacturing a liquid crystal display device, after manufacturing the electrode layer and element layer, the liquid crystal surface The display device is shaped and then processed to add enhanced functionality.

[0027] An element layer 101 is formed on the fabricated substrate 100 (see Figure 1(A)). The element layer 101 is a thin film. This includes a transistor. Next, the element layer 101 is transposed onto the support substrate 102 (see Figure 1(B)). . ) .

[0028] A first support 111 is used as the mold for the shape of the liquid crystal display device, and the first support 111 is used The substrate 110 is provided along the curved surface of the first support 111 (see Figure 1(C)). The substrate 110 only needs to be fixed to the first support 111, and can be attached using an adhesive layer or the like. Through this process, the first substrate 110 is formed into a shape having a curved region and a planar region. ru.

[0029] The element layer 101 and the first substrate 110 are facing each other, and the support substrate 102 and the first support 1 Arrange 11 and transfer the element layer 101 towards the first substrate 110 in the direction of the arrow (Figure 1(D (See reference.) That is, the element layer 1 is applied to the surface opposite to the surface that contacts the support 111. Transfer 01 from the support substrate 102.

[0030] The fabricated substrate 100 can be appropriately selected according to the fabrication process of the element layer 101. For example, the fabricated substrate 100 could be a glass substrate, a quartz substrate, a sapphire substrate, or a ceramic substrate. A substrate, a metal substrate with an insulating layer formed on its surface, etc., can be used. A plastic substrate with sufficient heat resistance may be used.

[0031] A spacer 121 is formed on the second substrate 120 (see Figure 2(A)). The spacer 121 is It may be formed on another fabricated substrate and then transferred to the second substrate 120.

[0032] The support substrate 102, the first substrate 110, and the second substrate 120 are flexible substrates (flexible base A plate is used. However, the first substrate 110 and the second substrate after their shapes have been processed and fixed. 120 does not need to be flexible. Support substrate 102, first substrate 110, second substrate 1 20 includes aramid resin, polyethylene naphthalate (PEN) resin, and polyethers PES resin, polyphenylene sulfide (PPS) resin, polyimide (P I) Resins and the like can be used.

[0033] Next, the surface on which the spacer 121 is not formed and the second support having a curved surface in at least part of it A second substrate 120 is provided with a spacer 121 so as to face the inside of the body 123. Next, the second support 123 is positioned (see Figure 2(B)). The second support 123 is U-shaped Shape is also acceptable.

[0034] By bonding the second substrate 120 to the inside of the second support 123 in the direction of the arrow, A second substrate 120 having a spacer 121 is molded in a shape similar to that of the support 123 of the second substrate. (See Figure 2(C)). This process results in the second substrate 120 having a bent region and a planar region. A region is formed.

[0035] A first support 111 on which the element layer 101 and the first substrate 110 are provided, and a spacer 121 and the second support 123 on which the second substrate 120 is provided, the element layer 101 and spacer 1 Position them so that they face each other (see Figure 3(A)).

[0036] The first support 111 and the second support 123 are fitted together (combined) in the direction of the arrow. The first substrate 110 and the second substrate 120 sandwich the liquid crystal layer 125 and the element layer 101. The parts are bonded together using the sealing material 124 (see Figure 3(B)). The above bonding process is reduced. It may also be done under pressure.

[0037] Typical sealing materials 124 include visible light curable, ultraviolet curable, or thermosetting resins. It is preferable to use acrylic resin, epoxy resin, amine resin, etc. It can be used as a photopolymerization initiator (typically ultraviolet light), thermosetting agent, filler, etc. It may contain a plucking agent.

[0038] The liquid crystal layer 125 is formed by sealing liquid crystal material in the void. The liquid crystal layer 125 is formed on the first substrate 11 Using a dispenser method (dropping method) in which material is dropped before bonding 0 and the second substrate 120 Alternatively, the first substrate 110 and the second substrate 120 may be bonded together and then subjected to capillary action. An injection method can be used to inject liquid crystal. There are no particular limitations on the liquid crystal material, and various types can be used. The following materials can be used. In addition, if a material exhibiting the blue phase is used as the liquid crystal material, the orientation will be different. The membrane can be eliminated.

[0039] Remove the first support 111 and the second support 123, and the first support 111 and the second support A liquid crystal display panel 150 can be manufactured that has a curved portion, reflecting the shape of the body 123. (See Figure 3(C).)

[0040] In addition, although not shown in this embodiment, a color filter (coloring layer) and a black matrix are also used. Optical components (optical substrates) such as light-shielding layers, polarizing members, phase difference members, and anti-reflective members are suitable. It may be provided as appropriate. For example, circular polarization using a polarizing substrate and a phase difference substrate may be used. Also, the light source and You may also use backlights, sidelights, etc.

[0041] The first substrate 110 and the second substrate 120 are connected to the first support 111 and the second support 123 When changing the shape, heat treatment or light irradiation treatment is used to fix that shape. Fixing treatment may be performed. Alternatively, the shape of the substrate may be deformed by heat treatment and the deformation may be maintained. The shape of the substrate may be fixed by cooling it while it is still in place.

[0042] The element layer 101 may be formed directly on the support substrate 102 or on the first substrate 110. For example, The electrode layer can be directly formed on the support substrate 102 or the first substrate 110 using a printing method or the like.

[0043] The method of transferring the element layer 101 from the fabricated substrate 100 to another substrate, as in this embodiment, is particularly Various methods can be used, but are not limited to the above. For example, the fabricated substrate 100 and the element layer 101 A delamination layer should be formed between them.

[0044] The release layer is formed by sputtering, plasma CVD, coating, printing, etc., using tungsten N (W), Molybdenum (Mo), Titanium (Ti), Tantalum (Ta), Niobium (Nb), Nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium Ru (Ru), Rh (Rh), Palladium (Pd), Osmium (Os), Iridium (Ir), elements selected from silicon (Si), or alloy materials mainly composed of these elements, or Layers made of compound materials primarily composed of the specified elements are formed as single layers or in stacks. Contains silicon. The crystalline structure of the layer may be amorphous, microcrystalline, or polycrystalline. The coating methods include spin coating, droplet dispensing, and dispensing.

[0045] When the release layer has a single-layer structure, it is preferably a tungsten layer, a molybdenum layer, or tungsten It forms a layer containing a mixture of tungsten and molybdenum. Alternatively, it forms an oxide or oxide of tungsten. A layer containing nitrides, a layer containing molybdenum oxide or oxidized nitride, or tungsten and A layer containing an oxide or oxidized nitride of a molybdenum mixture is formed. A mixture of tungsten and molybdenum is equivalent to, for example, an alloy of tungsten and molybdenum.

[0046] When the release layer has a laminated structure, preferably the first layer is a tungsten layer, a molybdenum layer, or The first layer contains a mixture of tungsten and molybdenum, and the second layer is tungsten, Oxides, nitrides, oxidized nitrides or nitrogen oxides of molybdenum or mixtures of tungsten and molybdenum It forms oxides.

[0047] As a release layer, a laminated structure is formed consisting of a layer containing tungsten and a layer containing tungsten oxide. In this case, a layer containing tungsten is formed, and an insulating layer made of oxide is formed on top of it. This process forms a layer containing tungsten oxide at the interface between the tungsten layer and the insulating layer. It may be useful to take advantage of this. Furthermore, the surface of the tungsten-containing layer may be subjected to thermal oxidation treatment. Tungsten acid is removed by treatment with oxygen plasma, ozonated water, or other highly oxidizing solutions. A layer containing monoxide may be formed. Plasma treatment and heat treatment may involve oxygen, nitrogen, and dioxide. This may be carried out in an atmosphere of nitrogen alone, or a mixed gas atmosphere of the aforementioned gas and other gases. The same applies when forming layers containing tungsten nitrides, oxidized nitrides, and nitride oxides. Yes, after forming a layer containing tungsten, a silicon nitride layer, an oxidized silicon nitride layer, and an acid nitride layer are formed on top of it. It is preferable to form a silicon dioxide layer.

[0048] Furthermore, the transfer process to another substrate involves forming a release layer between the substrate and the element layer, and the release layer and the element layer A metal oxide film is provided between the layers, and the metal oxide film is weakened by crystallization, causing the element layer to peel off. The method involves providing an amorphous silicon film containing hydrogen between a highly heat-resistant substrate and an element layer, and then applying laser light. The element layer is stripped by removing the amorphous silicon film through irradiation or etching. The method involves forming a release layer between the substrate and the element layer, and providing a metal oxide film between the release layer and the element layer. The metal oxide film is weakened by crystallization, and a portion of the peeled layer is removed by a solution containing NF3, BrF3, and Cl. After etching with a halogen-containing gas such as F3, the weakened metal oxide film is removed. Methods of peeling off the element layer, mechanically removing the substrate on which the element layer is formed, or using a solution or NF3, BrF 3. Use appropriate methods such as etching with a halogen-containing gas such as ClF3 to remove it. This can be achieved. In addition, a film containing nitrogen, oxygen, hydrogen, etc. can be used as a release layer (for example, an amorphous film containing hydrogen). Using silicon film, hydrogen-containing alloy film, oxygen-containing alloy film, etc., the delamination layer is irradiated with laser light. The nitrogen, oxygen, and hydrogen contained within the delamination layer are released as gases, promoting the separation of the element layer from the substrate. You may also use this method.

[0049] By combining the above peeling methods, the transfer process can be performed more easily. Irradiation with light, etching of the stripped layer with gas or solution, using sharp knives or scalpels By mechanically removing a portion of the element layer, or by otherwise making it easier to separate the delamination layer from the element layer, Furthermore, peeling can also be performed by physical force (such as by machinery).

[0050] Alternatively, the element layer may be peeled off the substrate by permeating a liquid into the interface between the release layer and the element layer.

[0051] The shape of the liquid crystal display panel 150 is determined by selecting the shape of the first support 111 and the second support 123. By selecting, you can make your own decisions. Therefore, it can be used in a variety of locations and applications. This shape allows for the creation of a variety of liquid crystal display devices, providing highly convenient liquid crystal display devices. It can be provided.

[0052] (Embodiment 2) In this embodiment, an example of a method for manufacturing a liquid crystal display device having a protective film is provided in Embodiment 1. This is shown in Figures 4 to 6. Therefore, the rest can be carried out in the same manner as in Embodiment 1. Descriptions of parts identical to or with similar functions to those in section 1, and of repetitions of processes, will be omitted.

[0053] Figures 4 to 6 are cross-sectional views showing a method for manufacturing a liquid crystal display device.

[0054] In this embodiment, in the process of manufacturing a liquid crystal display device, after manufacturing the electrode layer and element layer, the liquid crystal surface The shape of the display device is formed, and processing is performed to add high functionality. Furthermore, a protective film is added, and liquid To improve the reliability of crystal display devices.

[0055] An element layer 101 is formed on the fabricated substrate 100 (see Figure 4(A)). In this embodiment, The element layer 101 is formed including a spacer. The element layer 101 includes a thin-film transistor. Next, the element layer 101 is transferred to the support substrate 102 (see Figure 4(B)).

[0056] A first support 111 is used as the mold for the shape of the liquid crystal display device, and the first support 111 is used The substrate 110 is provided along the curved surface of the first support 111. It just needs to be fixed to the body 111, and can be attached with an adhesive layer or similar.

[0057] A protective film 103 is formed on the first substrate 110 fixed to the first support 111 (Figure 4). (See (C).) The protective film 103 is bent to conform to the shape of the first support 111. It is formed to cover the substrate 110. After the protective film 103 is formed, the shape of the first substrate 110 is processed. This process is not performed, thus preventing defects such as damage to the protective film 103 caused by the shaping of the first substrate 110. Therefore, the dense protective film 103 prevents moisture and other moisture from the first substrate 110. This method effectively blocks impurities and prevents contamination of the element layer and liquid crystal layer, resulting in a highly effective solution.

[0058] The protective film 103 and the first substrate 110 are sandwiched between the support substrate 102 and the first support 111. The support substrate 102 and the first support 111 are arranged in such a way, and the element layer 101 is in the direction of the arrow. The protective film 103 is then moved to the side of the first substrate 110 (see Figure 4(D)).

[0059] Next, the second substrate 120 and the second support 123 having a curved surface in at least a portion thereof are arranged. (See Figure 5(A).)

[0060] By bonding the second substrate 120 to the inside of the second support 123 in the direction of the arrow, The second substrate 120 is molded into a shape similar to that of the support 123 (see Figure 5(B)). .

[0061] A protective film 122 is formed on the second substrate 120 fixed to the second support 123 (Figure 5). (See (C).) The protective film 122 is bent to conform to the shape of the second support 123. The protective film 122 is formed to cover the substrate 120. After the protective film 122 is formed, the shape of the second substrate 120 is processed. This process is not performed, thus preventing defects such as damage to the protective film 122 caused by the shaping of the second substrate 120. Therefore, the dense protective film 122 prevents moisture and other moisture from the second substrate 120. This method effectively blocks impurities and prevents contamination of the element layer and liquid crystal layer, resulting in a highly effective solution.

[0062] The protective films 103 and 122 are formed by sputtering using an inorganic insulating material. This is possible. Examples of inorganic insulating materials include silicon oxide, silicon nitride, silicon oxide nitride, and aluminum oxide. Aluminum, aluminum nitride, aluminum oxide nitride, etc., can be used.

[0063] A first support 111 on which an element layer 101, a protective film 103, and a first substrate 110 are provided, The protective film 122 and the second support 123 on which the second substrate 120 is provided are arranged in the element layer 101 The protective film 122 is positioned to face the other (see Figure 6(A)).

[0064] The first support 111 and the second support 123 are combined in the direction of the arrow, forming the element layer 101 The protective film 103 and the first substrate 110, and the protective film 122 and the second substrate 120 are formed into a liquid crystal layer. The 125 is held in place and bonded together with the sealing material 124 (see Figure 6(B)).

[0065] In this embodiment, an example is shown in which a spacer is formed on the element layer 101, but a spherical shape is formed on the protective film 122. You may also scatter spacers.

[0066] The liquid crystal layer 125 is applied by dripping liquid before bonding the first substrate 110 and the second substrate 120. The dispenser method (dropping method) may be used, or the first substrate 110 and the second substrate 120 may be bonded together. An injection method can be used in which liquid crystal is injected using capillary action after the materials have been combined.

[0067] Remove the first support 111 and the second support 123, and the first support 111 and the second support A liquid crystal display panel 150 can be manufactured that has a curved portion, reflecting the shape of the body 123. (See Figure 6(C).)

[0068] The shape of the liquid crystal display panel 150 is determined by selecting the shape of the first support 111 and the second support 123. By selecting, you can make your own decisions. Therefore, it can be used in a variety of locations and applications. This shape allows for the creation of a variety of liquid crystal display devices, providing highly convenient liquid crystal display devices. It can be provided.

[0069] Furthermore, by providing a protective film, contamination of the element layer and liquid crystal layer with impurities can be prevented. This can improve the reliability of liquid crystal display devices.

[0070] (Embodiment 3) In this embodiment, the method for manufacturing a liquid crystal display device is described in Embodiment 1 and Embodiment 2. Other examples are shown in Figures 7 and 8. Therefore, the rest can be carried out in the same manner as in Embodiment 1. The description of parts identical to or having similar functions to those in Form 1, and the repetition of processes, will be omitted. .

[0071] Figures 7 and 8 are cross-sectional views showing a method for manufacturing a liquid crystal display device.

[0072] In this embodiment, during the manufacturing process of the liquid crystal display device, a pair of substrates are attached with the liquid crystal layer sandwiched between them. After assembly, the shape of the liquid crystal display device is formed, and processing is carried out to add high functionality.

[0073] An element layer 101 is formed on the fabricated substrate 100 (see Figure 7(A)). The element layer 101 is a thin film. This includes a transistor. Next, the element layer 101 is transposed onto the support substrate 102 (see Figure 7(B)). . ) .

[0074] The element layer 101 is transferred from the support substrate 102 to the first substrate 110 (see Figure 7(C)). .

[0075] A spacer 121 and a sealing material 124 are formed on the second substrate 120. The spacer 121 is other The material may be formed on the fabricated substrate and then transferred to the second substrate 120.

[0076] Next, the surface on which the spacer 121 and the sealing material 124 are formed faces the element layer 101. The second substrate 120 and the first substrate 110, which are provided with spacers 121, are arranged in this manner. (See Figure 7(D).)

[0077] The first substrate 110 and the second substrate 120 are bonded together with the liquid crystal layer 125 sandwiched in between (Figure See 7(E).) The flexible liquid crystal display panel 155 is formed through the above steps.

[0078] This is a structure consisting of a first substrate 110 and a second substrate 120 facing each other, with a liquid crystal layer 125 sandwiched between them. The shape of the flexible liquid crystal display panel 155 is processed and bent to create a liquid crystal display panel with a curved portion. Form the 150 (see Figure 7(F)). The shape is processed as in Embodiment 1 of the support 1. This may also be done using 11 or support 123.

[0079] Furthermore, a translucent retaining member is used to attach the liquid crystal display panel 155 to the retaining member, The shape of the display panel 155 may be modified and fixed in place.

[0080] Figure 8(A) shows the flexible liquid crystal display panel 155 fabricated in Figure 7(E) held by a light-transmitting retaining member. This is an example of attaching it to 127, processing it so that its shape includes a curved section, and then fixing it in place. Holding part Material 127 has a bent portion along one side, with a first surface on one side of the bent portion and a second surface on the other. It has a holding member 127, and the liquid crystal display panel 155 is provided to be in contact with the holding member 127, A first display area is formed on the first surface of the holding member 127, and a second display area is formed on the second surface of the holding member 127. This is possible. Also, the curve of the holding member 127 sandwiched between the first display area and the second display area. A third display area is formed on the surface. The liquid crystal display panel 155 and the holding member 127 are light-transmitting. It may also be fixed using an adhesive layer.

[0081] A protective film may be further formed on the liquid crystal display panel 150 shown in Figure 7(F).

[0082] A protective film 126 is formed to cover the liquid crystal display panel 150 (see Figure 8(B)).

[0083] The protective film 126 is formed on the liquid crystal display panel 150 which has been processed into a curved shape. Therefore, this prevents shape defects such as damage to the protective film 126 caused by the shaping of the liquid crystal display panel 150. Therefore, the dense protective film 126 protects against moisture and other impurities from the outside. This provides a highly effective way to block contamination and prevent contamination of the liquid crystal display panel 150.

[0084] The protective film 126 can be formed by sputtering using an inorganic insulating material. Examples of bonding materials include silicon oxide, silicon nitride, silicon oxide nitride, aluminum oxide, and aluminum nitride. Aluminum oxide, aluminum nitride, and the like can be used.

[0085] The shape of the liquid crystal display panel 150 can be freely determined by selecting the shape of the retaining member 127. It can be determined. Therefore, a variety of liquid crystal displays can be made into shapes that suit various locations and applications. We can manufacture the device and provide a highly convenient liquid crystal display device.

[0086] Furthermore, by providing a protective film, contamination of the element layer and liquid crystal layer with impurities can be prevented. This can improve the reliability of liquid crystal display devices.

[0087] (Embodiment 4) In this embodiment, in embodiments 1 to 3, a liquid crystal display device having other optical components is provided. An example is shown in Figure 9. Therefore, the rest can be carried out in the same manner as in Embodiments 1 to 3, and the form of implementation The descriptions of parts identical to or having similar functions to those in states 1 to 3, and the repetition of processes, are omitted. ru.

[0088] Optical system components can be installed in the liquid crystal display devices shown in Embodiments 1 to 3. The components include light sources such as backlights and sidelights, and optical films (polarizing films, Phase difference films, anti-reflective films, etc. can be used.

[0089] The optical film is provided on the outside of the first film and the second film (on the side opposite the liquid crystal layer). Alternatively, it may be placed on the inside (between the liquid crystal layer).

[0090] Cold cathode fluorescent lamps and light-emitting diodes (LEDs) can be used as backlight sources. Using multiple LED light sources or multiple electroluminescent (EL) light sources, etc. A surface light source may be constructed. Three or more types of LEDs may be used as the surface light source, or white LEDs may be used. You may also use LEDs for illumination.

[0091] Figures 9(A) and 9(B) show examples of liquid crystal display devices equipped with a backlight. Note that Embodiment 1 The liquid crystal display panel 150 shown in (1) or (3) is also called a liquid crystal display device. The backlight is the first base It is placed in the recess formed by the curved region and the flat region of the plate 110.

[0092] Figure 9(A) shows a liquid crystal display panel 150 equipped with a backlight 130, and the backlight 1 30 has a cold cathode tube 131a as a light source. The cold cathode tube 131a is arranged in the housing 132. Furthermore, it has a curved portion that conforms to the shape of the liquid crystal display panel.

[0093] Figure 9(B) also shows a liquid crystal display panel 150 equipped with a backlight 130, and the backlight 1 30 has an LED 131b as a light source. The LED 131b is arranged in the housing 132. It has a curved section that conforms to the shape of the liquid crystal display panel.

[0094] In the backlight 130 of Figures 9(A) and 9(B), a light guide member (component) may be provided. A scattering member (film), a reflective member (film), etc. may be provided. The housing 132 is a light source or It has a light-transmitting portion in the region that transmits light.

[0095] As shown in this embodiment, the shape of the optical member is adjusted to match the shape of the liquid crystal display device having a curved portion. The shape is also formed and arranged to include curved sections.

[0096] The shape of the liquid crystal display can be freely determined by selecting the shape to be molded. Therefore, it is possible to manufacture liquid crystal display devices in a variety of shapes to suit various locations and applications. This enables the provision of highly convenient liquid crystal display devices.

[0097] (Embodiment 5) In this embodiment, in embodiments 1 to 4, multiple liquid crystal display elements are placed on a large substrate. An example of creating a sub-layer (so-called multi-faceted processing) is shown in Figure 11. Therefore, the others are Embodiments 1 to 4. This can be done in the same manner as in Embodiments 1 to 4, and the same parts or parts having similar functions as in Embodiments 1 to 4. The explanation of the repetition of the process will be omitted.

[0098] In the above embodiment, an element layer 101 is formed on the fabricated substrate 100, and the fabricated substrate 100 Next, the element layer 101 is transferred to the support substrate 102, which is a flexible substrate.

[0099] Figure 11 shows a method for transferring multiple element layers from a large fabricated substrate to a support substrate. A2)(B2)(C2) are plan views, and Figure 11(A1)(B1)(C1) is a plan view. These are cross-sectional views of the line XY at A2, B2, and C2, respectively.

[0100] Element layers 101a, 101b, and 101c are formed on a large fabrication substrate 180 (Figure 11(A See 1)(A2). ).

[0101] The support substrate 182 is placed opposite the element layers 101a, 101b, and 101c, and the fabricated substrate 18 From 0, the element layers 101a, 101b, and 101c are transferred to the support substrate 182 in the direction of the arrow. See Figure 11 (B1) (B2).

[0102] Support substrate 182 for each element layer 101a, element layer 101b, and element layer 101c It is divided into support substrate 102b and support substrate 102c (see Figure 11(C1)(C2)). .) As for the means of division, there are no particular limitations as long as it can be physically divided, such as a dicer, s A cleaver or similar device may be used, or the material may be divided by irradiating it with laser light.

[0103] Element layer 1 formed on support substrate 102 (102a, 102b, 102c) for each panel A liquid crystal display device is fabricated using 01 (101a, 101b, 101c) respectively. The process can be carried out in the same manner as in Embodiments 1 to 4.

[0104] Thus, a large substrate can be used for multiple liquid crystal display devices at once. By implementing a relocation process, productivity can be improved. (Embodiment 6) The invention disclosed herein relates to both passive matrix and active matrix liquid crystal display devices. It can also be applied to liquid crystal display devices of the cubic type.

[0105] Thin-film transistors are fabricated, and these thin-film transistors are used in the pixel section and further in the driving circuit. A liquid crystal display device with a display function can be fabricated. Furthermore, a thin-film transistor can be driven by... Part or all of the path is integrally formed on the same substrate as the pixel section to form a system-on-panel. It is possible.

[0106] A liquid crystal display device includes a liquid crystal element (also called a liquid crystal display element) as a display element.

[0107] Furthermore, the liquid crystal display device includes a panel in which the display elements are sealed, and a control for the panel. This includes a module on which ICs, etc., including a liquid crystal display are mounted. The module of the display device is shown in Figures 10 and 12.

[0108] In this specification, liquid crystal display devices refer to image display devices, display devices, or This refers to a light source (including lighting devices). Also, connectors, such as FPC (Flexible Printed Circuit). (printed circuit) or TAB (Tape Automated B (onding) tape or TCP (Tape Carrier Package) The attached module, the TAB tape or TCP has a printed circuit board at the end. Joule, or display element, IC (integrated) using the COG (Chip On Glass) method. Modules with directly implemented integrated circuits are also included in the definition of liquid crystal display devices.

[0109] Figures 10 and 10 show the external appearance and cross-section of a liquid crystal display panel, which corresponds to one form of liquid crystal display device. This will be explained using Figure 12. Figures 10 and 12 show the liquid crystal display panel 4000 with FPC4018. This is an example of a liquid crystal display module to which a thin film is formed on the first substrate 4001. The film transistors 4010, 4011, and the liquid crystal element 4013 are connected to the second substrate 4006. The layers are sealed with sealant 4005. Figures 10(A) and 10(B) show the liquid crystal display module. The perspective view, Figure 12, corresponds to the cross-sectional view at MN in Figure 10(A).

[0110] Furthermore, the liquid crystal display module in Figure 10(B) has a translucent holding member 4040 and a liquid crystal display panel. This is an example of fixing the 4000. The liquid crystal display panel 4000 is attached to the light-transmitting holding member 4040. It is provided inscribed within it.

[0111] As shown in Figures 10(A) and 10(B), the pixel section 4002, which functions as a display area, has sides and bottom It is continuously provided on the side and bottom surfaces of the liquid crystal display panel which is bent to have a surface, bottom A first display area can be provided on the surface, and a second display area on the side.

[0112] The pixel section 4002 and the scanning line driving circuit 4004 are surrounded on the first substrate 4001. A sealing material 4005 is provided in this manner. Also, the pixel section 4002 and the scan line drive rotation A second substrate 4006 is provided on the path 4004. Therefore, the pixel section 4002 and the scanning The line drive circuit 4004 consists of the first substrate 4001, the sealing material 4005, and the second substrate 4006. It is sealed together with the liquid crystal layer 4008.

[0113] Furthermore, in an area different from the area surrounded by the sealing material, a separate substrate is prepared and placed on it. The signal line driving circuit 4003, formed from a crystalline semiconductor film or a polycrystalline semiconductor film, is operated by the TAB method. That's how it's implemented.

[0114] In addition, a separately formed signal line drive circuit 4003 and a scan line drive circuit 4004 or pixel unit 4 The various signals and potentials supplied to 002 are provided by the FPC4018.

[0115] Furthermore, the method of connecting the separately formed drive circuit is not particularly limited, and COG method, Wire bonding methods or TAB methods can be used.

[0116] Furthermore, the pixel section 4002 and the scanning line driving circuit 4004 provided on the first substrate 4001 are, It has multiple thin-film transistors, and in Figure 12, the thin-film transistors included in the pixel section 4002 Let's take the zista 4010 and the thin-film transistor 4011 included in the scan line driving circuit 4004 as examples. This shows that insulating layers 4020 and 4021 are provided on thin-film transistors 4010 and 4011. It is being applied. Furthermore, insulating film 4023 is an insulating film that functions as a base layer.

[0117] Thin-film transistors 4010 and 4011 are not particularly limited and can be applied to various thin-film transistors. This is possible. In Figure 12, thin-film transistors 4010 and 4011 are shown as bottom gate. An example using a thin-film transistor with a staggered structure is shown. Thin-film transistor 4010, 4 011 indicates a channel etch type, but channel protection is provided by providing a channel protection film on the semiconductor layer. An inverse staggered thin-film transistor of type [type] may also be used.

[0118] Furthermore, a pixel electrode layer 4030 is provided on the first substrate 4001, and the pixel electrode layer 4030 is, It is electrically connected to the thin-film transistor 4010. The liquid crystal element 4013 is a pixel electrode layer It includes 4030, a counter electrode layer 4031, and a liquid crystal layer 4008. Note that the liquid crystal layer 4008 is sandwiched between them. Insulating films 4032 and 4033 are provided to function as alignment films. The polar layer 4031 is provided on the second substrate 4006 side, and the pixel electrode layer 4030 and the counter electrode layer 40 Layer 31 is constructed by stacking it via the liquid crystal layer 4008.

[0119] The first substrate 4001 and the second substrate 4006 are made of light-transmitting plastic. These can be used. As for plastics, FRP (Fiberglass-R Reinforced plastics) board, PVF (polyvinyl fluoride) fill Polyester film or acrylic resin film can be used. A sheet with a structure in which aluminum foil is sandwiched between PVF film or polyester film is used. It is possible to stay there.

[0120] Furthermore, 4035 is a columnar spacer obtained by selectively etching an insulating film. It is provided to control the film thickness (cell gap) of the liquid crystal layer 4008. You may use a pacer.

[0121] Although Figure 12 shows an example of a transmissive liquid crystal display, it can also be applied to a semi-transmissive liquid crystal display.

[0122] Furthermore, in the liquid crystal display device shown in Figure 12, polarizing films 4040a and 4040b are placed on the outside of the substrate. An example of installation is shown, but the polarizing film may also be installed on the inside of the substrate. It should be set appropriately depending on the manufacturing process conditions. Additionally, it functions as a black matrix for light shielding. Layers may be added.

[0123] The insulating layer 4020 functions as a protective film for the thin-film transistor.

[0124] Furthermore, the protective film (insulating layer 4020) is protected from organic matter, metals, water vapor, and other contaminants suspended in the atmosphere. This is to prevent the intrusion of dye impurities, and a dense film is preferred. Protective film (insulating layer 4020) ) uses the sputtering method to produce silicon oxide films, silicon nitride films, silicon oxide nitride films, and silicon oxide nitride films. , aluminum oxide film, aluminum nitride film, aluminum oxide nitride film, or aluminum nitride oxide It can be formed by a single layer or multiple layers of luminium film.

[0125] Furthermore, the insulating layer 4021, which functions as a planar insulating film, is made of polyimide, acrylic resin, and benzylamine. Use heat-resistant organic materials such as zocyclobutene resin, polyamide, and epoxy resin. In addition to the above organic materials, low dielectric constant materials (low-k materials), siloxanes Resins such as polystyrene (PSG), phosphorus glass (BPSG), and phosphorus boron glass (BPSG) can be used. Furthermore, even if multiple insulating films made of these materials are stacked, an insulating layer can be formed. good.

[0126] The method for forming the insulating layer 4021 is not particularly limited and can be done by sputtering, spin-coating, etc., depending on the material. Temperature method, dipping method, spray coating, droplet ejection method (inkjet method, screen printing) Printing, offset printing, etc.), roll coating, curtain coating, knife coating Baking can be used. When forming the insulating layer 4021 using a material liquid, baking The semiconductor layer may be annealed (200°C to 400°C) at the same time as the insulating layer. By combining the firing process and the annealing of the semiconductor layer, it is possible to efficiently manufacture liquid crystal display devices. It becomes Noh.

[0127] In this specification, a liquid crystal display device is a transmissive type that displays by transmitting light from a light source. In the case of a liquid crystal display device (or a semi-transmissive liquid crystal display device), light is at least in the pixel area. It is necessary to allow light to pass through. Therefore, the substrate, other insulating films, and conductive films present in the pixel region through which light passes. All of these thin films are designed to be transparent to light in the visible light wavelength range.

[0128] In the electrode layer (also called the pixel electrode layer, common electrode layer, or counter electrode layer) to which voltage is applied to the liquid crystal layer Furthermore, the location where the electrode layer is provided and the pattern structure of the electrode layer determine the light transmittance and reflectivity. You just need to make a choice.

[0129] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of indium oxide containing tungsten oxide. , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Titanium oxide-containing indium tin oxide, indium tin oxide (hereinafter referred to as ITO), Translucent materials such as indium zinc oxide and indium tin oxide with added silicon dioxide. Conductive materials can be used.

[0130] Furthermore, the pixel electrode layer 4030 and the counter electrode layer 4031 are made of tungsten (W) and molybdenum (M). o) Zirconium (Zr), Hafnium (Hf), Vanadium (V), Niobium (Nb) Tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), titanium ( Metals such as Ti, platinum (Pt), aluminum (Al), copper (Cu), silver (Ag), or It can be formed using one or more types of the alloy or its metal nitride. .

[0131] Furthermore, conductive polymers are used as the pixel electrode layer 4030 and the counter electrode layer 4031. It can be formed using a conductive composition containing (also known as). Examples of conductive polymers include: So-called π-electron conjugated conductive polymers can be used. For example, polyaniline or Its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or Examples include copolymers of two or more of these types of copolymers.

[0132] Furthermore, thin-film transistors are susceptible to damage from static electricity, so the gate wire or source wire may be damaged. It is preferable to provide a protection circuit for the drive circuit on the same substrate as the wire. It is preferable to construct it using nonlinear elements.

[0133] In Figure 12, the connection terminal electrode 4015 is formed from the same conductive film as the pixel electrode layer 4030. The terminal electrode 4016 is the source electrode layer and drain of the thin-film transistors 4010 and 4011. It is formed from the same conductive film as the electrode layer.

[0134] The connecting terminal electrode 4015 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. They are electrically connected.

[0135] Furthermore, in Figures 10(A) and 10(B), a signal line drive circuit 4003 is formed separately, and FPC40 An example implementation is shown in 18, but the configuration is not limited to this. A separate scan line drive circuit may be formed. You can implement it as is, or you can separately implement only a part of the signal line drive circuit or a part of the scan line drive circuit. It's fine to implement it.

[0136] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0137] (Embodiment 7) The thin-film transistors in the liquid crystal display devices disclosed herein are not particularly limited. Various structures and semiconductor materials can be used for thin-film transistors.

[0138] An example of the structure of a thin-film transistor will be explained using Figure 13. Figure 13 is an example of Embodiment 6. This is an example of a thin-film transistor that can be used in the thin-film transistor 4010, as shown in Figure 1. Number 3 corresponds to Figure 12.

[0139] In Figures 13(A) to (D), an insulating film 4023 is formed on the first substrate 4001. Thin film transistors 4010a, 410b, 4010c, and 4010d are located on the insulating film 4023. It is provided on thin-film transistors 4010a, 410b, 4010c, and 4010d. Insulating layer 4020 and insulating layer 4021 are formed, thin film transistors 4010a and 410b, A pixel electrode layer 4030 is provided which is electrically connected to 4010c and 4010d.

[0140] Thin-film transistor 4010a is the same as thin-film transistor 4010 in Figure 12, Wiring layers 405a and 405b that function as electrode layers and drain electrode layers and semiconductor layer 40 This configuration allows layer 3 and layer n+ to be in contact without an intervening layer.

[0141] Thin-film transistor 4010a is an inverse staggered thin-film transistor and has an insulating surface. A gate electrode layer 401 and a gate insulating film 4023 are placed on the first substrate 4001, which is the substrate. Layer 402, semiconductor layer 403, wiring layer 40 which functions as a source electrode layer or drain electrode layer Includes 5a and 405b.

[0142] The thin-film transistor 4010b is a bottom-gate type thin-film transistor and has an insulating surface. A first substrate 4001, an insulating film 4023, a gate electrode layer 401, and a gate electrode layer 401 are placed on the substrate. Insulating layer 402, wiring layers 405a, 405 which function as source electrode layer or drain electrode layer b, n, which functions as a source region or drain region. + Layers 404a, 404b, and semiconductor It includes layer 403. It also covers the thin-film transistor 4010b and is in contact with the semiconductor layer 403. A border film 407 is provided. + Layers 404a and 404b have lower resistance than semiconductor layer 403. It is a semiconductor layer.

[0143] Note that n + Layers 404a and 404b are connected to the gate insulation layer 402 and the wiring layers 405a and 405b. It may also be a structure placed in between. + The layers are between the gate insulation layer and the wiring layer, and the wiring layer The structure may also be provided both between and on both sides of the semiconductor layer.

[0144] Thin-film transistor 4010b is present in the entire region including thin-film transistor 4010b. A first substrate having a gate insulating layer 402 and an insulating surface A gate electrode layer 401 is provided between the plates 4001. Wiring is provided on the gate insulating layer 402. Layers 405a, 405b, and n + Layers 404a and 404b are provided. And, Insulating layer 402, wiring layers 405a, 405b, and n + Semiconductor on layers 404a and 404b Layer 403 is provided. Although not shown, in addition to wiring layers 405a and 405b, there is a wiring layer which extends outside the outer peripheral portion of semiconductor layer 403. 5a, 405b and has a wiring layer that extends outside the outer peripheral portion of the semiconductor layer 403. is present.

[0145] Thin film transistor 4010c is configured such that in thin film transistor 4010b, the source electrode layer and and the drain electrode layer and the semiconductor layer are in contact without an n + layer therebetween.

[0146] Thin film transistor 4010c has a gate insulating layer 402 throughout the region including thin film transistor 4010c, and a gate electrode layer 401 is provided between the gate insulating layer 402 and a first substrate 4001 which is a substrate having an insulating surface. Wiring layers 405a, 405b are provided on the gate insulating layer 402. And a semiconductor layer 403 is provided on the gate insulating layer 402, wiring layers 405a, 405b. Although not shown, in addition to wiring layers 405a, 405b, there is a wiring layer on the gate insulating layer 402, and the wiring layer extends outside the outer peripheral portion of semiconductor layer 403. plate 4001 of the first substrate having an insulating surface. plate 4001, a gate electrode layer 401 is provided between the gate insulating layer 402 and the first substrate 4001 which is a substrate having an insulating surface. Wiring layers 405a, 405b are provided on the gate insulating layer 402. And a semiconductor layer 403 is provided on the gate insulating layer 402, wiring layers 405a, 405b. Although not shown, in addition to wiring layers 405a, 405b, there is a wiring layer on the gate insulating layer 402, and the wiring layer extends outside the outer peripheral portion of semiconductor layer 4 layer 405a, 405b are provided. And a semiconductor layer 403 is provided on the gate insulating layer 402, wiring layers 405a, 405b. Although not shown, in addition to wiring layers 405a, 405b, there is a wiring layer on the gate insulating layer 402, and the wiring layer extends outside the outer peripheral portion of semiconductor layer 403. plate 4001 of the first substrate having an insulating surface. 02, and in addition to wiring layers 405a, 405b, there is a wiring layer on the gate insulating layer 402, and the wiring layer extends outside the outer peripheral portion of semiconductor layer 403. is extending.

[0147] Thin film transistor 4010d is a top gate type thin film transistor. Thin film transistor 4010d is an example of a planar type thin film transistor. On a first substrate 4001 having an insulating surface and an insulating film 4023, a semiconductor layer 403 including n layers 404a, 404b functioning as a source region or a drain region, a gate insulating layer 402 is formed on the semiconductor layer 403, and a gate electrode layer 401 is formed on the gate insulating layer 402. Also n layer 404a, 404b and a wiring layer functioning as a source electrode layer or a drain electrode layer in contact with the n + layers 404a, 404b including a semiconductor layer 403, a gate insulating layer 402 is formed on the semiconductor layer 403, and a gate electrode layer 401 is formed on the gate insulating layer 402. Also 402 is formed, and a gate electrode layer 401 is formed on the gate insulating layer 402. Also n + layers 404a, 404b and a wiring layer functioning as a source electrode layer or a drain electrode layer in contact with the n Layers 405a and 405b are formed. n + Layers 404a and 404b are semiconductor regions with lower resistance than semiconductor layer 403

[0148] A top-gate sequential staggered thin-film transistor may be used as the thin-film transistor.

[0149] In this embodiment, a single-gate structure has been described, but a multi-gate structure such as a double-gate structure may also be used. In this case, a structure in which gate electrode layers are provided above and below the semiconductor layer may be used, or a structure in which a plurality of gate electrode layers are provided only on one side (above or below) of the semiconductor layer may also be used.

[0150] The semiconductor material used for the semiconductor layer is not particularly limited. Examples of materials that can be used for the semiconductor layer of the thin-film transistor will be described.

[0151] The material for forming the semiconductor layer of the semiconductor element is an amorphous (amorphous, hereinafter also referred to as "AS") semiconductor produced by a vapor phase growth method or a sputtering method using a semiconductor material gas typified by silane or germanium, a polycrystalline semiconductor obtained by crystallizing the amorphous semiconductor using light energy or thermal energy, or a microcrystalline (also called semi-amorphous or microcrystal, hereinafter also referred to as "SAS") semiconductor. The semiconductor layer can be formed by a sputtering method, an LPCVD method, a plasma CVD method, or the like.

[0152] Considering the Gibbs free energy, the microcrystalline semiconductor film belongs to an intermediate metastable state between amorphous and single crystal. That is, it is a semiconductor having a thermodynamically stable third state, having short-range order and lattice strain. Columnar or needle-like crystals are normal to the substrate surface. ​​​​​​​​​​​​ It is growing in the direction of Raman spectrometers. Microcrystalline silicon, a representative example of microcrystalline semiconductors, has a Raman spectrometer. Torr shows single-crystal silicon at 520 cm². -1 It is shifted to lower wavenumbers. That is, 520 cm² showing single-crystal silicon -1 and amorphous silicon 480cm -1 During There is a peak in the Raman spectrum of microcrystalline silicon. Also, unbonded bonds (dangling bonds) To terminate the end, it contains at least 1 atom% or more of hydrogen or halogen. Furthermore, it contains noble gas elements such as helium, argon, krypton, and neon. Further promoting sub-strain increases stability and yields a high-quality microcrystalline semiconductor film.

[0153] This microcrystalline semiconductor film is produced by high-frequency plasma CVD with frequencies ranging from tens of MHz to hundreds of MHz, Alternatively, it can be formed using a microwave plasma CVD apparatus with a frequency of 1 GHz or higher. Typical examples include silicon hydride such as SiH4, Si2H6, SiH2Cl2, and SiHCl3. Alternatively, silicon halides such as SiCl4 and SiF4 can be formed by diluting them with hydrogen. In addition to silicon hydride and hydrogen, you can choose from helium, argon, krypton, and neon. A microcrystalline semiconductor film can be formed by diluting it with one or more noble gas elements. In these cases, the hydrogen flow rate ratio to silicon hydride should be 5 times or more and 200 times or less, preferably 5 The ratio should be between 0 and 150 times, and more preferably 100 times.

[0154] Typical examples of amorphous semiconductors include hydrogenated amorphous silicon and crystalline semiconductors. A typical example is polysilicon. Polysilicon (polycrystalline silicon) has so-called High-temperature polysilicon and polysilicon formed at process temperatures below 600°C are the main materials. Using so-called low-temperature polysilicon and elements that promote crystallization, amorphous silicon It contains polysilicon, which is crystallized from condensate. Of course, as mentioned above, it is microcrystalline. A semiconductor containing a crystalline phase in a semiconductor or a portion of a semiconductor layer can also be used.

[0155] In addition, semiconductor materials include elements such as silicon (Si) and germanium (Ge). Compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, and SiGe are also used. It is possible to be there.

[0156] When a crystalline semiconductor film is used as the semiconductor layer, there are various methods for fabricating the crystalline semiconductor film. Methods (laser crystallization, thermal crystallization, or using elements that promote crystallization such as nickel) A method such as thermal crystallization can be used. Alternatively, a microcrystalline semiconductor, such as SAS, can be irradiated with a laser to crystallize it. It can also be transformed to increase crystallinity. If elements that promote crystallization are not introduced, it will remain amorphous. Before irradiating the semiconductor film with laser light, it is heated at 500°C for 1 hour under a nitrogen atmosphere. The hydrogen concentration in the amorphous semiconductor film is 1 × 10⁻⁶ 20 atoms / cm 3 Release to the following extent This occurs when a laser beam is shone on an amorphous semiconductor film containing a large amount of hydrogen. Because it will be destroyed.

[0157] When crystallizing an amorphous semiconductor film using elements that promote (accelerate) crystallization, The elements that contribute to this include iron (Fe), nickel (Ni), cobalt (Co), and ruthenium. One or more selected from metal elements such as ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), platinum (Pt), copper (Cu), and gold (Au) can be used. As a method for introducing a metal element into the amorphous semiconductor film, there is no particular limitation as long as it is a method capable of causing the metal element to exist on the surface or inside of the amorphous semiconductor film. For example, a sputtering method, a CVD method, a plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a solution of a metal salt can be used. Among these, the method using a solution is useful in that it is simple and easy to adjust the concentration of the metal element. At this time, in order to improve the wettability of the surface of the amorphous semiconductor film and spread the solution of the metal salt over the entire surface of the amorphous semiconductor film, it is desirable to form an oxide film on the surface of the amorphous semiconductor film by irradiation with UV light in an oxygen atmosphere, a thermal oxidation method, treatment with ozone water containing hydroxyl radicals, or hydrogen peroxide. In addition, when crystallizing using an element that promotes crystallization, heat treatment (3 minutes to 24 hours at 550°C to 750°C) may be performed. In order to remove or reduce the element that promotes crystallization from the crystalline semiconductor film, a semiconductor film containing an impurity element is formed in contact with the crystalline semiconductor film and made to function as a gettering sink. As the impurity element, an impurity element that imparts an n-type, an impurity element that imparts a p-type, or a noble gas element can be used. For example, one or more selected from phosphorus (P), nitrogen (N), arsenic (As), antimony ( Sb), bismuth (Bi), boron (B), helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) can be used.

[0158]

[0159] It is possible to have a crystalline semiconductor film containing elements that promote crystallization, and a semiconductor film containing noble gas elements. A conductive film is formed, and then heat treatment is performed (550°C to 750°C for 3 minutes to 24 hours). Crystalline semiconductor Elements that promote crystallization contained in the film migrate into the semiconductor film containing noble gas elements, and crystallinity Elements that promote crystallization in the semiconductor film are removed or reduced. Subsequently, the gettering semiconductor film is formed. The semiconductor film containing the noble gas elements that have been removed is then removed.

[0160] Crystallization of amorphous semiconductor films may be achieved by combining heat treatment and laser irradiation. Heat treatment or laser irradiation may be performed individually or multiple times.

[0161] Alternatively, a crystalline semiconductor film may be formed directly on the substrate by a plasma method. A crystalline semiconductor film may be selectively formed on a substrate using this method.

[0162] Alternatively, an oxide semiconductor may be used for the semiconductor layer. For example, zinc oxide (ZnO) or tin oxide. (SnO2) can also be used. When ZnO is used in the semiconductor layer, the gate insulating layer Using Y2O3, Al2O3, TiO2, or stacks thereof, the gate electrode layer and source electrode ITO, Au, Ti, etc. can be used as the polar layer and drain electrode layer. In, Ga, and other elements can also be added to ZnO.

[0163] InMO3(ZnO) is an oxide semiconductor. m Using a thin film denoted as (m>0) Yes, it is possible. Note that M stands for gallium (Ga), iron (Fe), nickel (Ni), and manganese (M). n) represents one or more metallic elements selected from cobalt (Co). For example, In addition to the possibility of M being Ga, other combinations such as Ga and Ni or Ga and Fe, etc., are also possible. Metallic elements may be present. Furthermore, in the above oxide semiconductor, other impurity elements may be present. Some contain transition metals or oxides of transition metals. For example, oxide semiconductor layers. In-Ga-Zn-O non-single crystal films can be used as such.

[0164] Instead of an In-Ga-Zn-O non-single-crystal film, an oxide semiconductor layer with M being another metal element. (InMO3(ZnO) m A membrane (m>0) may also be used.

[0165] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. That is the case.

[0166] (Embodiment 8) The liquid crystal display devices disclosed herein are applicable to a variety of electronic devices (including gaming machines). This can be done. As for electronic devices, for example, television equipment (television, or television) (Also called a receiver), computer monitors, digital cameras, digital video cameras Camera, digital photo frame, mobile phone (also called mobile phone or mobile phone device), mobile Examples include small game consoles, portable information terminals, sound playback devices, and large game machines such as pachinko machines. It can be done.

[0167] In this embodiment, Figure 14 shows an example of applying the liquid crystal display device disclosed herein to a mobile phone. And as shown in Figure 15.

[0168] Figure 14(C) shows a mobile phone viewed from the front, and Figure 14(D) shows a mobile phone viewed from the side. Figure 14(B) shows a view of the mobile phone from the top, and the casing is made from casings 1411a and 1411b. Therefore, at least the display area of ​​the housings 1411a and 1411b is a light-transmitting retaining member. Figure 14(A) is a cross-sectional view of the inside of housing 1411a and housing 1411b. The shape of 411a when viewed from the front is a rectangle with long and short sides, and the corners of the rectangle are rounded. This may also be the case. In this embodiment, the direction parallel to the long side of the rectangle which is the front shape is the longitudinal direction. The direction parallel to the shorter side is called the shorter side direction.

[0169] Furthermore, the shape of the enclosures 1411a and 1411b when viewed from the side is also a rectangle with a long side and a short side. The corners of the rectangle may be rounded. In this embodiment, the long rectangle is the side shape. The direction parallel to the sides is called the longitudinal direction, and the direction parallel to the shorter sides is called the depth direction.

[0170] The mobile phone shown in Figures 14(A) to 14(D) has a display area 1413 and operation buttons 1 404, has a touch panel 1423, and has an LCD display panel inside the housing 1411a, 1411b Includes 1421, backlight 1424, and wiring board 1425. Touch panel 14 23 can be added as needed.

[0171] The liquid crystal display panel 1421 is a liquid crystal display panel and liquid crystal display model described in Embodiments 1 to 7. You can use joules.

[0172] As shown in Figures 14(B) and 14(C), the liquid crystal display panel 1421 is housed in a 1411a type enclosure. It is positioned to cover not only the front viewing area, but also parts of the top and bottom areas, following the shape. Therefore, the upper part of the mobile phone in the longitudinal direction also has a display area continuous with the display area 1413. 1427 can be formed. That is, a display area 1427 can also be formed on the top surface of the mobile phone. It exists. This means that, for example, even if you have your cell phone in your breast pocket, You can view the display area 1427 without taking it out.

[0173] Display areas 1413 and 1427 show information such as whether there is an email, whether there is a call, the date and time, the phone number, and the person's name. It would be sufficient if it could be displayed. Also, if necessary, only display area 1427 can be displayed, and the other areas will be... By not displaying the information, energy conservation can be achieved.

[0174] A cross-sectional view of Figure 14(D) is shown in Figure 15. As shown in Figure 15, it is inscribed within the housing 1411a. A liquid crystal display panel 1421 is continuously provided from the top surface to the front and bottom surfaces, The backlight 1424 is located on the back of the display panel 1421 and is electrically connected to the liquid crystal display panel 1421. The following wiring board 1425 and battery 1426 are located on the housing 1411a. A touch panel 1423 is positioned on the external side, on the viewing side.

[0175] The mobile phone of this embodiment can display images and text whether it is placed vertically or horizontally. can.

[0176] Instead of manufacturing the liquid crystal display panel 1421 separately for the front and top regions, the front display Since it is manufactured to exist in both area 1413 and the top display area 1427, the manufacturing cost This can reduce production time and manufacturing time.

[0177] A touch panel 1423 is located on the housing 1411a, and the display area 1413 has Button 1414 will appear on the touch panel. Touch button 1414 with your finger or other object. Furthermore, the display content of the display area 1413 can be manipulated. Also, telephone calls, or To compose an email, touch the button 1414 in the display area 1413 with your finger or the like. It is possible.

[0178] The button 1414 on the touch panel 1423 should only be displayed when necessary, and button 14 When area 14 is not needed, images or text can be displayed across the entire display area 1413.

[0179] Furthermore, the upper long side of the cross-sectional shape of the mobile phone may also have a radius of curvature. When the shape is formed such that the upper long side has a radius of curvature, the liquid crystal display panel 1421 and touch Panel 1423 also has a radius of curvature on the upper long side in each of its cross-sectional shapes. Body 1411a also has a curved shape. That is, when the display area 1413 is viewed from the front, It will be rounded and protrude towards the front.

Claims

[Claim 1] A device layer containing thin-film transistors is formed on the fabricated substrate. The element layer is transferred from the fabricated substrate to the support substrate. The first substrate is bonded along the curved surface of the first support, The support substrate and the first support are arranged so that the element layer and the first substrate face each other, and the element layer is transferred onto the first substrate. A spacer is formed on the second substrate. The second substrate is positioned so that the surface of the second substrate on which the spacer is not formed faces the inner surface of the second support having a curved surface, and the second substrate is bonded to the inside of the second support. The first support on which the element layer and the first substrate are provided, and the second support on which the spacer and the second substrate are provided, are arranged such that the element layer and the spacer face each other. The first substrate and the second substrate are bonded together with a sealing material, sandwiching the liquid crystal layer and the element layer between them. A method for manufacturing a liquid crystal display panel, characterized by removing the first support and the second support, and forming a liquid crystal display panel having a curved portion that reflects the shape of the first support and the second support.

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