Display device, display module and electronic device,

Abstract

Provided is a highly reliable display device. This display device has a first light-emitting device, a second light-emitting device, and an inorganic insulating layer. The first light-emitting device has a first pixel electrode, a first light-emitting layer disposed on the first pixel electrode, and a common electrode disposed on the first light-emitting layer. The second light-emitting device has a second pixel electrode, a second light-emitting layer disposed on the second pixel electrode, and a common electrode disposed on the second light-emitting layer. The inorganic insulating layer covers respective side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer. Preferably, hydrogen concentration and carbon concentration in the inorganic insulating layer are both sufficiently low.

Description

Display device, display module, electronic device, and method for manufacturing the display device

[0001] 1. Field of the Invention One embodiment of the present invention relates to a display device, a display module, and an electronic device. 2. Description of the Related Art One embodiment of the present invention relates to a manufacturing method of a display device.

[0002] One embodiment of the present invention is not limited to the above technical field, and examples of the technical field of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), driving methods thereof, and manufacturing methods thereof.

[0003] In recent years, display devices have been expected to be used in a variety of applications. For example, applications of large display devices include home television devices (also called televisions or television receivers), digital signage, and public information displays (PIDs). In addition, development of mobile information terminals, such as smartphones and tablet terminals equipped with touch panels, is progressing.

[0004] There is also a demand for higher definition display devices. Devices requiring high-definition display devices, such as devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), are being actively developed.

[0005] As a display device, for example, a light-emitting device having a light-emitting device (also referred to as a light-emitting element) has been developed. A light-emitting device (also referred to as an EL device or an EL element) utilizing an electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to an input signal, and being capable of being driven by a DC constant voltage power supply, and is therefore applied to a display device.

[0006] Patent Document 1 discloses a display device for VR that uses an organic EL device (also called an organic EL element).

[0007] International Publication No. 2018 / 087625

[0008] When manufacturing a display device having a plurality of organic EL devices each emitting a different light color, it is necessary to form the light-emitting layers each emitting a different light color in an island shape.

[0009] For example, island-shaped light-emitting layers can be formed by vacuum deposition using a metal mask (also known as a shadow mask). However, this method can result in deviations in the shape and position of the island-shaped light-emitting layers from the design due to various factors, such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and the spread of the contours of the formed film due to vapor scattering, making it difficult to achieve high-definition and high-aperture displays. Furthermore, during deposition, the contours of the layer can become blurred, resulting in thin edges. In other words, the island-shaped light-emitting layer can vary in thickness depending on the location. Furthermore, when fabricating large, high-resolution, or high-definition display devices, there is a concern that low yields may be caused by low dimensional accuracy of the metal mask and deformation due to heat, etc.

[0010] An object of one embodiment of the present invention is to provide a high-resolution display device.An object of one embodiment of the present invention is to provide a highly reliable display device.

[0011] An object of one embodiment of the present invention is to provide a method for manufacturing a high-resolution display device.An object of one embodiment of the present invention is to provide a method for manufacturing a high-resolution display device.An object of one embodiment of the present invention is to provide a method for manufacturing a highly reliable display device.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high yield.

[0012] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims.

[0013] One embodiment of the present invention includes a first light-emitting device, a second light-emitting device, and an inorganic insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and a common electrode over the second light-emitting layer. The inorganic insulating layer covers side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer. The hydrogen concentration of the inorganic insulating layer is 1.0×10 ２２ atoms / cm ３ The following is a display device.

[0014] The hydrogen concentration of the inorganic insulating layer is 9.0×10 ２１ atoms / cm ３ It is preferable that:

[0015] One embodiment of the present invention includes a first light-emitting device, a second light-emitting device, and an inorganic insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and a common electrode over the second light-emitting layer. The inorganic insulating layer covers side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer. The carbon concentration of the inorganic insulating layer is 2.5×10 ２１ atoms / cm ３ The following is a display device.

[0016] The carbon concentration of the inorganic insulating layer is 2.0×10 ２１ atoms / cm ３ It is preferable that:

[0017] Preferably, any of the above display devices further includes an organic insulating layer. The organic insulating layer preferably overlaps with each of the side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer via an inorganic insulating layer. The common electrode preferably has a region located on the organic insulating layer.

[0018] The first light-emitting device has a common layer between the first light-emitting layer and the common electrode, and the second light-emitting device has a common layer between the second light-emitting layer and the common electrode, and the common layer preferably has at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0019] Preferably, the first light-emitting device and the second light-emitting device emit light of different colors.

[0020] Preferably, any of the above display devices further has a first colored layer and a second colored layer that transmit light of different colors, the first light-emitting device and the second light-emitting device emit white light, and the light emitted from the first light-emitting device is extracted to the outside of the display device via the first colored layer, and the light emitted from the second light-emitting device is extracted to the outside of the display device via the second colored layer.

[0021] One embodiment of the present invention is a display module including a display device having any of the above structures, and including a connector such as a flexible printed circuit (hereinafter referred to as FPC) or a tape carrier package (TCP) attached thereto, or a display module including an integrated circuit (IC) mounted thereon by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like.

[0022] One embodiment of the present invention is an electronic device including the above-described display module and at least one of a housing, a battery, a camera, a speaker, and a microphone.

[0023] One embodiment of the present invention includes forming a conductive film on an insulating surface, forming a first layer on the conductive film, forming a first sacrificial layer on the first layer, processing the first layer and the first sacrificial layer to expose a part of the conductive film, forming a second layer on the first sacrificial layer and the conductive film, forming a second sacrificial layer on the second layer, processing the second layer and the second sacrificial layer to expose a part of the conductive film, and processing the conductive film to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer, and forming the first pixel electrode overlapping with the second sacrificial layer by atomic layer deposition at a substrate temperature of 60° C. A method for manufacturing a display device includes forming an inorganic insulating film covering at least a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first layer, a side surface of the second layer, a side surface and a top surface of the first sacrificial layer, and a side surface and a top surface of the second sacrificial layer under conditions of 140° C. or higher and 140° C. or lower, processing the inorganic insulating film to form an inorganic insulating layer covering at least a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first layer, and a side surface of the second layer, removing the first sacrificial layer and the second sacrificial layer, and forming a common electrode on the first layer and the second layer.

[0024] In the above-described method for manufacturing a display device, it is preferable to form an organic insulating film on an inorganic insulating film, and process the inorganic insulating film and the organic insulating film to form an inorganic insulating layer and an organic insulating layer on the inorganic insulating layer that cover at least the side surfaces of the first pixel electrode, the second pixel electrode, the first layer, and the second layer, and to remove the first sacrificial layer and the second sacrificial layer, and to form a common electrode on the first layer, the second layer, and the organic insulating layer.

[0025] In the above-mentioned method for manufacturing a display device, after removing the first sacrificial layer and the second sacrificial layer, it is preferable to form a third layer on the first layer and the second layer, and to form a common electrode on the third layer.

[0026] According to one embodiment of the present invention, a high-definition display device can be provided. According to one embodiment of the present invention, a high-resolution display device can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided.

[0027] According to one embodiment of the present invention, a method for manufacturing a high-resolution display device can be provided. According to one embodiment of the present invention, a method for manufacturing a high-resolution display device can be provided. According to one embodiment of the present invention, a method for manufacturing a highly reliable display device can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high yield can be provided.

[0028] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0029] FIG. 1A is a top view showing an example of a display device. FIG. 1B is a cross-sectional view showing an example of a display device. FIGS. 2A and 2B are cross-sectional views showing an example of a display device. FIGS. 3A to 3C are cross-sectional views showing an example of a display device. FIGS. 4A to 4F are cross-sectional views showing an example of a display device. FIGS. 5A to 5C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 6A to 6C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 7A to 7C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 8A to 8C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 9A to 9F are top views showing an example of a pixel. FIGS. 10A to 10H are top views showing an example of a pixel. FIGS. 11A to 11J are top views showing an example of a pixel. FIGS. 12A to 12D are top views showing an example of a pixel. FIGS. 12E to 12G are cross-sectional views showing an example of a display device. FIGS. 13A and 13B are perspective views showing an example of a display device. 14A to 14C are cross-sectional views showing an example of a display device. FIG. 15 is a cross-sectional view showing an example of a display device. FIG. 16 is a cross-sectional view showing an example of a display device. FIG. 17 is a cross-sectional view showing an example of a display device. FIG. 18 is a cross-sectional view showing an example of a display device. FIG. 19 is a cross-sectional view showing an example of a display device. FIG. 20 is a perspective view showing an example of a display device. FIG. 21A is a cross-sectional view showing an example of a display device. FIGS. 21B and 21C are cross-sectional views showing an example of a transistor. FIGS. 22A to 22D are cross-sectional views showing an example of a display device. FIG. 23 is a cross-sectional view showing an example of a display device. FIG. 24 is a cross-sectional view showing an example of a display device. FIGS. 25A to 25F are diagrams showing configuration examples of light-emitting devices. FIGS. 26A to 26D are diagrams showing an example of an electronic device. FIGS. 27A to 27F are diagrams showing an example of an electronic device. FIGS. 28A to 28G are diagrams showing an example of an electronic device. FIG. 29 is a diagram showing evaluation results of Examples. FIG. 30 is a diagram explaining an evaluation method for Examples. FIG. 31 is a diagram showing evaluation results of Examples. FIG. 32 is a diagram showing evaluation results of Examples. FIG. 33 is a diagram showing the evaluation results of the examples.

[0030] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0031] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used and no particular reference numeral may be assigned.

[0032] Furthermore, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0033] The terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0034] Embodiment 1 In this embodiment, a display device according to one embodiment of the present invention and a manufacturing method thereof will be described with reference to FIGS.

[0035] In a manufacturing method of a display device according to one embodiment of the present invention, a first layer (which can be referred to as an EL layer or a part of an EL layer) including a light-emitting layer emitting light of a first color is formed over the entire surface, and then a first sacrificial layer is formed over the first layer. Then, a first resist mask is formed over the first sacrificial layer, and the first layer and the first sacrificial layer are processed using the first resist mask to form an island-shaped first layer. Subsequently, a second layer (which can be referred to as an EL layer or a part of an EL layer) including a light-emitting layer emitting light of a second color is formed in an island shape using a second sacrificial layer and a second resist mask, similar to the first layer.

[0036] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped EL layer is formed by forming the EL layer over the entire surface and then processing it, rather than by using a metal mask having a fine pattern. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be formed separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and has high display quality. Furthermore, by providing a sacrificial layer (which may also be referred to as a mask layer) on the EL layer, damage to the EL layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-emitting device.

[0037] While it is difficult to achieve a spacing of less than 10 μm between adjacent light-emitting devices using, for example, a metal mask, the above-described method can narrow the spacing to less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using, for example, an exposure device for LSIs, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting devices, enabling the aperture ratio to approach 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, and even less than 100%.

[0038] Furthermore, the pattern of the EL layer itself (also known as the processing size) can be made much smaller than when a metal mask is used. Furthermore, for example, when a metal mask is used to separately fabricate an EL layer, thickness variations occur between the center and edges of the EL layer, resulting in a smaller effective area that can be used as a light-emitting region relative to the area of ​​the EL layer. On the other hand, the above-described fabrication method processes a film formed to a uniform thickness, allowing island-shaped EL layers to be formed with a uniform thickness. Therefore, even with a fine pattern, almost the entire area can be used as a light-emitting region. This allows the fabrication of a display device that combines high definition and a high aperture ratio.

[0039] Here, the first layer and the second layer each include at least a light-emitting layer and preferably consist of multiple layers. Specifically, it is preferable to have one or more layers on the light-emitting layer. By having another layer between the light-emitting layer and the sacrificial layer, it is possible to prevent the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the light-emitting layer. This can improve the reliability of the light-emitting device. Therefore, it is preferable that the first layer and the second layer each include a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer.

[0040] In light-emitting devices that emit light of different colors, it is not necessary to form all layers constituting the EL layer separately; some layers can be formed in the same process. Examples of layers included in the EL layer include a light-emitting layer, a carrier injection layer (hole injection layer and electron injection layer), a carrier transport layer (hole transport layer and electron transport layer), and a carrier block layer (hole block layer and electron block layer). In a method for manufacturing a display device according to one embodiment of the present invention, some layers constituting the EL layer are formed in an island shape for each color, and then at least a portion of the sacrificial layer is removed. The remaining layers constituting the EL layer and a common electrode (also referred to as an upper electrode) are formed in common (as a single film) for the light-emitting devices of each color. For example, the carrier injection layer and the common electrode, which are formed after the light-emitting layer, can be formed in common for the light-emitting devices of each color. Meanwhile, the carrier injection layer is often a relatively conductive layer in the EL layer. Therefore, if the carrier injection layer contacts the side surface of a part of the island-shaped EL layer or the side surface of the pixel electrode, the light-emitting device may be short-circuited. Furthermore, even when the carrier injection layer is provided in an island shape and a common electrode is formed in common for the light-emitting devices of each color, there is a risk of the light-emitting device short-circuiting due to contact between the common electrode and the side surface of the EL layer or the side surface of the pixel electrode.

[0041] Therefore, a display device according to one embodiment of the present invention includes an insulating layer that covers at least the side surfaces of the island-shaped light-emitting layer.

[0042] This prevents at least a portion of the island-shaped EL layer and the pixel electrode from coming into contact with the carrier injection layer or the common electrode, thereby preventing short circuits in the light-emitting device and improving the reliability of the light-emitting device.

[0043] Furthermore, by providing the insulating layer, the gaps between adjacent island-shaped EL layers can be filled, thereby reducing the unevenness of the surface on which layers (such as a carrier injection layer and a common electrode) are formed on the island-shaped EL layers, making the surface flatter. This improves the coverage of the carrier injection layer or the common electrode, thereby preventing the common electrode from being broken.

[0044] In this specification and the like, the term "step discontinuity" refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of the surface on which it is formed (for example, a step or the like).

[0045] Furthermore, the insulating layer can be provided so as to contact the island-shaped EL layer. This can prevent peeling of the EL layer. The close contact between the insulating layer and the island-shaped EL layer has the effect of fixing or bonding adjacent island-shaped EL layers by the insulating layer. Furthermore, the insulating layer can prevent moisture from penetrating the interface between the pixel electrode and the EL layer, thereby preventing peeling of the EL layer. This can improve the reliability of the light-emitting device. Furthermore, the yield of the light-emitting device can be increased.

[0046] The insulating layer preferably functions as a barrier insulating layer against at least one of water and oxygen, suppresses diffusion of at least one of water and oxygen, and captures or fixes (also referred to as gettering) at least one of water and oxygen.

[0047] In this specification and the like, a barrier insulating layer refers to an insulating layer having barrier properties. In addition, in this specification and the like, the barrier properties refer to a function of suppressing the diffusion of a corresponding substance (also referred to as low permeability) or a function of capturing or fixing (also referred to as gettering) a corresponding substance.

[0048] By using an insulating layer having a function as a barrier insulating layer or a gettering function, it is possible to suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse into each light-emitting device from the outside. With this configuration, it is possible to provide a highly reliable light-emitting device and further a highly reliable display device.

[0049] A display device of one embodiment of the present invention has a pixel electrode that functions as an anode, and an island-shaped hole-injection layer, a hole-transport layer, a light-emitting layer, and an electron-transport layer that are arranged in this order over the pixel electrode, and also has an insulating layer provided so as to cover each side surface of the hole-injection layer, the hole-transport layer, the light-emitting layer, and the electron-transport layer, an electron-injection layer provided over the electron-transport layer, and a common electrode that functions as a cathode and is provided over the electron-injection layer.

[0050] Alternatively, a display device of one embodiment of the present invention includes a pixel electrode that functions as a cathode, and an island-shaped electron-injection layer, an electron-transport layer, a light-emitting layer, and a hole-transport layer that are arranged in this order over the pixel electrode, and includes an insulating layer provided so as to cover side surfaces of the electron-injection layer, the electron-transport layer, the light-emitting layer, and the hole-transport layer, a hole-injection layer provided over the hole-transport layer, and a common electrode that functions as an anode over the hole-injection layer.

[0051] Alternatively, a display device according to one embodiment of the present invention includes a pixel electrode, a first light-emitting unit over the pixel electrode, a charge generation layer (also referred to as an intermediate layer) over the first light-emitting unit, a second light-emitting unit over the charge generation layer, an insulating layer provided so as to cover each side surface of the first light-emitting unit, the charge generation layer, and the second light-emitting unit, and a common electrode provided over the second light-emitting unit. Note that the light-emitting devices for each color may have a common layer between the second light-emitting unit and the common electrode.

[0052] Among EL layers, the hole injection layer, the electron injection layer, the charge generation layer, and the like are often layers with relatively high conductivity. In the display device of one embodiment of the present invention, the side surfaces of these layers are covered with an insulating layer, so that contact with a common electrode or the like can be suppressed. Therefore, short circuits in the light-emitting device can be suppressed, and the reliability of the light-emitting device can be improved.

[0053] By adopting such a configuration, a display device with high definition or resolution and high reliability can be manufactured. For example, there is no need to artificially increase the definition by applying a special pixel arrangement method such as a pen tile method, and even an arrangement method using three or more sub-pixels per pixel can realize an extremely high-definition display device. For example, a display device with a so-called stripe arrangement in which R, G, and B are each arranged in one direction, and a resolution of 500 ppi or more, 1000 ppi or more, 2000 ppi or more, even 3000 ppi or more, or even 5000 ppi or more can be realized.

[0054] The insulating layer covering the side surfaces of the island-shaped EL layer may have a single layer structure or a multilayer structure.

[0055] For example, by forming an insulating layer having a single layer structure using an inorganic material, the insulating layer can be used as a protective insulating layer for an EL layer, thereby improving the reliability of the display device.

[0056] Furthermore, when using insulating layers with a stacked structure, the first insulating layer is preferably formed using an inorganic insulating material because it is formed in contact with the EL layer. In particular, it is preferable to form the first insulating layer using an atomic layer deposition (ALD) method, which causes less film formation damage. Alternatively, it is preferable to form the inorganic insulating layer using a sputtering method, a chemical vapor deposition (CVD) method, or a plasma enhanced chemical vapor deposition (PECVD) method, which have a faster film formation rate than the ALD method. This allows for the production of a highly reliable display device with high productivity. Furthermore, it is preferable to form the second insulating layer using an organic material so as to planarize the recesses formed in the first insulating layer.

[0057] For example, an aluminum oxide film formed by an ALD method can be used as the first insulating layer, and an organic resin film can be used as the second insulating layer.

[0058] If the side surface of the EL layer and the organic resin film are in direct contact, organic solvents contained in the organic resin film may damage the EL layer. By using an inorganic insulating film such as an aluminum oxide film formed by the ALD method as the first layer of the insulating layer, it is possible to prevent direct contact between the organic resin film and the side surface of the EL layer. This makes it possible to prevent the EL layer from being dissolved by an organic solvent.

[0059] Furthermore, the insulating layer in contact with the island-shaped EL layer preferably has a low impurity concentration. This can prevent impurities from being mixed into the EL layer from the insulating layer, thereby preventing the EL layer from deteriorating. Furthermore, by lowering the impurity concentration in the insulating layer, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer have a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, preferably both.

[0060] For example, the hydrogen concentration of the insulating layer of a single layer structure or the first insulating layer (the layer in contact with the EL layer) is 1.0×10 ２２ atoms / cm ３ Preferably, it is 9.0 x 10 or less. ２１ atoms / cm ３ More preferably, it is 8.0 × 10 or less. ２１ atoms / cm ３ More preferably, it is 6.0 × 10 or less. ２１ atoms / cm ３ For example, the hydrogen concentration of the aluminum oxide film formed by the above-mentioned ALD method is preferably within the above range.

[0061] For example, the carbon concentration of a single-layer insulating layer or the first insulating layer (the layer in contact with the EL layer) is 2.5×10 ２１ atoms / cm ３ Preferably, it is 2.0 × 10 or less. ２１ atoms / cm ３ More preferably, it is 1.0 × 10 or less. ２１ atoms / cm ３ More preferably, it is 6.0 × 10 or less. ２０ atoms / cm ３For example, the carbon concentration of the aluminum oxide film formed by the above-mentioned ALD method is preferably within the above range.

[0062] Furthermore, in the display device of this embodiment, since there is no need to provide an insulating layer between the pixel electrode and the EL layer to cover the edge of the pixel electrode, the distance between adjacent light-emitting devices can be made extremely narrow. Therefore, the display device can have high definition or high resolution. Furthermore, a mask for forming the insulating layer is not required, which reduces the manufacturing cost of the display device.

[0063] Furthermore, by using a structure in which an insulating layer covering an edge of the pixel electrode is not provided between the pixel electrode and the EL layer, in other words, by using a structure in which an insulating layer is not provided between the pixel electrode and the EL layer, light from the EL layer can be efficiently extracted. Therefore, the display device of one embodiment of the present invention can have extremely low viewing angle dependence. By reducing the viewing angle dependence, the visibility of images in the display device can be improved. For example, in the display device of one embodiment of the present invention, the viewing angle (the maximum angle at which a certain contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to a range of 100° to less than 180°, preferably 150° to 170°. Note that the above viewing angle can be applied to both the vertical and horizontal directions.

[0064] [Configuration Example of Display Device] FIGS. 1A and 1B illustrate a display device of one embodiment of the present invention.

[0065] 1A shows a top view of a display device 100. The display device 100 has a display section in which a plurality of pixels 110 are arranged in a matrix, and a connection section 140 outside the display section. The connection section 140 can also be called a cathode contact section.

[0066] A stripe arrangement is applied to the pixel 110 shown in Fig. 1A. The pixel 110 shown in Fig. 1A is composed of three subpixels, 110a, 110b, and 110c. The subpixels 110a, 110b, and 110c each have a light-emitting device that emits light of a different color. Examples of the subpixels 110a, 110b, and 110c include three subpixels of red (R), green (G), and blue (B), and three subpixels of yellow (Y), cyan (C), and magenta (M).

[0067] The top surface shape of the sub-pixel shown in FIG. 1A corresponds to the top surface shape of the light-emitting region.

[0068] Furthermore, the circuit layout constituting the subpixels is not limited to the range of the subpixels shown in Fig. 1A and may be located outside of it. For example, some or all of the transistors included in the subpixel 110a may be located outside the range of the subpixel 110a shown in Fig. 1A. For example, the transistor included in the subpixel 110a may have a portion located within the range of the subpixel 110b and a portion located within the range of the subpixel 110c.

[0069] 1A , the subpixels 110 a, 110 b, and 110 c are shown with the same or approximately the same aperture ratio (size, or the size of the light-emitting region), but this is not a limitation of one embodiment of the present invention. The aperture ratios of the subpixels 110 a, 110 b, and 110 c can be determined as appropriate. The aperture ratios of the subpixels 110 a, 110 b, and 110 c may be different from one another, or two or more of the subpixels 110 a, 110 b, and 110 c may be equal or approximately equal.

[0070] 1A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may also be arranged side by side in the Y direction, and subpixels of the same color may also be arranged side by side in the X direction.

[0071] 1A shows an example in which the connection unit 140 is located below the display unit when viewed from above, but this is not particularly limited. The connection unit 140 only needs to be located in at least one of the upper, right, left, and lower sides of the display unit when viewed from above, and may be located so as to surround all four sides of the display unit. The top surface shape of the connection unit 140 may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like. Furthermore, the connection unit 140 may be singular or plural.

[0072] Fig. 1B shows cross-sectional views taken along dashed lines X1-X2, X3-X4, and Y1-Y2 in Fig. 1A. As modified examples, Figs. 2A and 2B, and 3A to 3C show cross-sectional views taken along dashed lines X1-X2 and Y1-Y2 in Fig. 1A.

[0073] 1B , display device 100 includes light-emitting devices 130R, 130G, and 130B provided on transistor-containing layer 101, and protective layer 131 provided to cover these light-emitting devices. Substrate 120 is bonded to protective layer 131 with resin layer 122. In addition, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in the regions between adjacent light-emitting devices.

[0074] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed, a bottom emission type that emits light toward a substrate on which a light-emitting device is formed, and a dual emission type that emits light from both sides.

[0075] The transistor-containing layer 101 may have, for example, a stacked structure in which a plurality of transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The transistor-containing layer 101 may have a recess between adjacent light-emitting devices. For example, a recess may be provided in an insulating layer located on the outermost surface of the transistor-containing layer 101. A configuration example of the transistor-containing layer 101 will be described later in Embodiment 3.

[0076] The light emitting device 130R emits red (R) light, the light emitting device 130G emits green (G) light, and the light emitting device 130B emits blue (B) light.

[0077] As the light-emitting devices 130R, 130G, and 130B, for example, an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode) is preferably used. Examples of light-emitting substances (also referred to as light-emitting materials) included in the light-emitting devices include fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF materials). Note that the TADF material may be a material that is in thermal equilibrium between a singlet excited state and a triplet excited state. Such TADF materials have a short emission lifetime (excitation lifetime), which can suppress a decrease in efficiency in the high-brightness region of the light-emitting device. Furthermore, an inorganic compound (for example, a quantum dot material) may be used as the light-emitting substance contained in the light-emitting device.

[0078] A light-emitting device has an EL layer between a pair of electrodes, one of which may be referred to as a pixel electrode and the other as a common electrode in this specification and the like.

[0079] A light-emitting device has a pair of electrodes, one of which functions as an anode and the other as a cathode. In the following, an example will be described in which the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0080] The light-emitting device 130R includes a pixel electrode 111a on the transistor-containing layer 101, an island-shaped first layer 113a on the pixel electrode 111a, a fourth layer 114 on the island-shaped first layer 113a, and a common electrode 115 on the fourth layer 114. The pixel electrode 111a functions as a pixel electrode. In the light-emitting device 130R, the first layer 113a and the fourth layer 114 can be collectively referred to as an EL layer.

[0081] The structure of the light emitting device of this embodiment is not particularly limited, and may be a single structure or a tandem structure. An example of the structure of the light emitting device will be described later in the fourth embodiment.

[0082] The first layer 113a may include, for example, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer, or may include, for example, a first light-emitting unit, a charge generation layer, and a second light-emitting unit.

[0083] The fourth layer 114 can be called a common layer in that the light-emitting devices of each color share the same film. The fourth layer 114 has, for example, an electron injection layer. Alternatively, the fourth layer 114 may have a stack of an electron transport layer and an electron injection layer.

[0084] The light-emitting device 130G includes a pixel electrode 111b on the transistor-containing layer 101, an island-shaped second layer 113b on the pixel electrode 111b, a fourth layer 114 on the island-shaped second layer 113b, and a common electrode 115 on the fourth layer 114. The pixel electrode 111b functions as a pixel electrode. In the light-emitting device 130G, the second layer 113b and the fourth layer 114 can be collectively referred to as an EL layer.

[0085] The light-emitting device 130B includes a pixel electrode 111c on the transistor-containing layer 101, an island-shaped third layer 113c on the pixel electrode 111c, a fourth layer 114 on the island-shaped third layer 113c, and a common electrode 115 on the fourth layer 114. The pixel electrode 111c functions as a pixel electrode. In the light-emitting device 130B, the third layer 113c and the fourth layer 114 can be collectively referred to as an EL layer.

[0086] The light-emitting devices of each color share the same film as a common electrode. The common electrode 115 shared by the light-emitting devices of each color is electrically connected to a conductive layer 123 provided in a connection portion 140 (see FIG. 1B ). The conductive layer 123 can be formed from the same material and in the same process as the pixel electrodes 111 a, 111 b, and 111 c.

[0087] 1B shows an example in which the fourth layer 114 is provided over the conductive layer 123, and the conductive layer 123 and the common electrode 115 are electrically connected to each other through the fourth layer 114. The fourth layer 114 does not have to be provided in the connection portion 140. For example, FIG. 2A shows an example in which the fourth layer 114 is not provided over the conductive layer 123, and the conductive layer 123 and the common electrode 115 are directly connected to each other. For example, by using a mask (also referred to as an area mask or a rough metal mask) for defining a deposition area, the regions where the fourth layer 114 and the common electrode 115 are deposited can be changed.

[0088] The side surfaces of the pixel electrodes 111a to 111c, the first layer 113a, the second layer 113b, and the third layer 113c are covered with the insulating layer 125 and the insulating layer 127. This prevents the fourth layer 114 (or the common electrode 115) from contacting any of the side surfaces of the pixel electrodes 111a to 111c, the first layer 113a, the second layer 113b, and the third layer 113c, thereby preventing short circuits in the light-emitting device. This improves the reliability of the light-emitting device.

[0089] The insulating layer 125 preferably covers at least the side surfaces of the pixel electrodes 111a to 111c. Furthermore, the insulating layer 125 preferably covers the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c. The insulating layer 125 can be in contact with the side surfaces of the pixel electrodes 111a to 111c, the first layer 113a, the second layer 113b, and the third layer 113c.

[0090] The insulating layer 127 is provided over the insulating layer 125 so as to fill recesses in the insulating layer 125. The insulating layer 127 can overlap with (or cover) side surfaces of the pixel electrodes 111a to 111c, the first layer 113a, the second layer 113b, and the third layer 113c with the insulating layer 125 interposed therebetween.

[0091] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, which reduces the unevenness of the surface on which a layer (for example, a common electrode) provided on the island-shaped layers is formed, making it possible to make the surface flatter, thereby improving the coverage of the common electrode and preventing the common electrode from being broken.

[0092] The fourth layer 114 and the common electrode 115 are provided over the first layer 113a, the second layer 113b, the third layer 113c, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step is generated between a region where the pixel electrode and the EL layer are provided and a region where the pixel electrode and the EL layer are not provided (a region between light-emitting devices). In the display device of one embodiment of the present invention, the insulating layer 125 and the insulating layer 127 can planarize the step, thereby improving the coverage of the fourth layer 114 and the common electrode 115. Therefore, poor connection due to a step in the common electrode 115 can be suppressed. Alternatively, an increase in electrical resistance caused by a local thinning of the common electrode 115 due to the step can be suppressed.

[0093] In order to improve the flatness of the surfaces on which the fourth layer 114 and the common electrode 115 are formed, it is preferable that the heights of the upper surfaces of the insulating layers 125 and 127 are the same or approximately the same as the height of the upper surface of at least one of the first layer 113a, the second layer 113b, and the third layer 113c. The upper surface of the insulating layer 127 preferably has a flat shape, and may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.

[0094] Furthermore, the insulating layer 125 or the insulating layer 127 can be provided so as to be in contact with the island-shaped layer. This can prevent the island-shaped layer from peeling off. The insulating layer and the island-shaped layer are brought into close contact with each other, which has the effect of fixing or bonding the adjacent island-shaped layers together by the insulating layer. This can improve the reliability of the light-emitting device. Furthermore, the yield of the light-emitting device can be increased.

[0095] Note that either the insulating layer 125 or the insulating layer 127 does not necessarily have to be provided. Fig. 2B shows an example in which the insulating layer 127 is not provided. For example, by forming the insulating layer 125 to have a single-layer structure using an inorganic material, the insulating layer 125 can be used as a protective insulating layer for the EL layer. This can improve the reliability of the display device.

[0096] The insulating layer 125 has a region in contact with the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c, and functions as a protective insulating layer for the first layer 113a, the second layer 113b, and the third layer 113c. By providing the insulating layer 125, impurities (oxygen, moisture, and the like) can be prevented from entering the inside from the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c, thereby providing a highly reliable display device.

[0097] If the width (thickness) of the insulating layer 125 in a region in contact with the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c is large in a cross-sectional view, the distance between the first layer 113a, the second layer 113b, and the third layer 113c may be large, resulting in a low aperture ratio. Furthermore, if the width (thickness) of the insulating layer 125 is small, the effect of suppressing impurities from entering the inside from the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c may be reduced. The width (thickness) of the insulating layer 125 in a region in contact with the side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c is preferably 3 nm or more, 5 nm or more, or 10 nm or more, and is preferably 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less. By setting the width (thickness) of the insulating layer 125 in the above range, a display device having a high aperture ratio and high reliability can be obtained.

[0098] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer in the formation of the insulating layer 127 described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD method as the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent protection of the EL layer. The insulating layer 125 may also have a stacked structure of a film formed by an ALD method and a film formed by a sputtering method. For example, the insulating layer 125 may have a stacked structure of an aluminum oxide film formed by an ALD method and a silicon nitride film formed by a sputtering method.

[0099] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0100] The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. The insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0101] The insulating layer 125 has a function as a barrier insulating layer or a gettering function, which makes it possible to suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse into each light-emitting device from the outside. With this configuration, it is possible to provide a highly reliable light-emitting device and further a highly reliable display device.

[0102] The insulating layer 125 preferably has a low impurity concentration. This can prevent impurities from entering the EL layer from the insulating layer 125 and causing deterioration of the EL layer. Furthermore, a low impurity concentration in the insulating layer 125 can improve the barrier properties against at least one of water and oxygen. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, or preferably both of them.

[0103] For example, the hydrogen concentration of the insulating layer 125 is 1.0×10 ２２ atoms / cm ３ Preferably, it is 9.0 x 10 or less. ２１ atoms / cm ３ More preferably, it is 8.0 × 10 or less. ２１ atoms / cm ３ More preferably, it is 6.0 × 10 or less. ２１ atoms / cm ３ For example, the insulating layer 125 is preferably an aluminum oxide film whose hydrogen concentration is in the above range.

[0104] For example, the carbon concentration of the insulating layer 125 is 2.5×10 ２１ atoms / cm ３ Preferably, it is 2.0 × 10 or less. ２１ atoms / cm ３More preferably, it is 1.0 × 10 or less. ２１ atoms / cm ３ More preferably, it is 6.0 × 10 or less. ２０ atoms / cm ３ For example, it is preferable to use an aluminum oxide film whose carbon concentration is in the above range as the insulating layer 125.

[0105] The insulating layer 125 can be formed by a sputtering method, a CVD method, a pulsed laser deposition (PLD) method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method because it has good coverage.

[0106] By increasing the substrate temperature during deposition of the insulating layer 125, the insulating layer 125 can be formed with a low impurity concentration and a high barrier property against at least one of water and oxygen, even if the insulating layer 125 is thin. Therefore, the substrate temperature is preferably 60° C. or higher, more preferably 80° C. or higher, more preferably 100° C. or higher, and still more preferably 120° C. or higher. On the other hand, since the insulating layer 125 is deposited after the island-shaped EL layer is formed, it is preferably formed at a temperature lower than the heat-resistant temperature of the EL layer. Therefore, the substrate temperature is preferably 200° C. or lower, more preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 150° C. or lower, and still more preferably 140° C. or lower.

[0107] Examples of heat resistance temperature indicators include glass transition point, softening point, melting point, thermal decomposition temperature, and 5% weight loss temperature. The heat resistance temperature of the EL layer can be any of these temperatures, preferably the lowest of these temperatures. Furthermore, when the EL layer is composed of multiple layers, the lowest heat resistance temperature of each layer can be the heat resistance temperature of the EL layer. Furthermore, when one layer is a mixed layer composed of multiple materials, for example, the heat resistance temperature of the material contained in the largest amount, or the lowest heat resistance temperature of each material, can be the heat resistance temperature of the layer.

[0108] The insulating layer 127 provided on the insulating layer 125 has the function of planarizing recesses formed in the insulating layer 125 between adjacent light-emitting devices. In other words, the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. An insulating layer containing an organic material can be suitably used as the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulating layer 127. Alternatively, a photosensitive resin can be used as the photosensitive resin. A photoresist can be used as the photosensitive resin. A positive-type material or a negative-type material can be used as the photosensitive resin.

[0109] A material that absorbs visible light may be used for the insulating layer 127. The insulating layer 127 absorbs light emitted from the light-emitting device, thereby suppressing leakage of light (stray light) from the light-emitting device to an adjacent light-emitting device through the insulating layer 127. This can improve the display quality of the display device.

[0110] The difference in height between the top surface of the insulating layer 127 and the top surface of any of the first layer 113a, the second layer 113b, and the third layer 113c is, for example, preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the insulating layer 127. For example, the insulating layer 127 may be provided so that the top surface of any of the first layer 113a, the second layer 113b, and the third layer 113c is higher than the top surface of the insulating layer 127. For example, the insulating layer 127 may be provided so that the top surface of the insulating layer 127 is higher than the top surface of the light-emitting layer included in the first layer 113a, the second layer 113b, or the third layer 113c.

[0111] It is preferable that the light-emitting devices 130R, 130G, and 130B have a protective layer 131. The reliability of the light-emitting devices can be improved by providing the protective layer 131. The protective layer 131 may have a single-layer structure or a laminated structure of two or more layers.

[0112] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0113] The protective layer 131 has an inorganic film, which prevents oxidation of the common electrode 115 and prevents impurities (such as moisture and oxygen) from entering the light-emitting devices 130R, 130G, and 130B, thereby suppressing deterioration of the light-emitting devices and improving the reliability of the display device.

[0114] The protective layer 131 can be made of an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film.

[0115] The protective layer 131 preferably includes an insulating nitride film or an insulating nitride oxide film, and more preferably includes an insulating nitride film.

[0116] Alternatively, an inorganic film containing In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like can be used for the protective layer 131. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0117] When light emitted from the light-emitting device is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0118] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 131. By using such a stacked structure, impurities (such as water and oxygen) can be prevented from entering the EL layer side.

[0119] Furthermore, the protective layer 131 may include an organic film. For example, the protective layer 131 may include both an organic film and an inorganic film.

[0120] The protective layer 131 may have a two-layer structure formed by using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed by the ALD method, and the second layer of the protective layer 131 may be formed by the sputtering method.

[0121] In the display device of this embodiment, the upper end portion of the pixel electrode is not covered with an insulating layer. Therefore, the distance between adjacent light-emitting devices can be made extremely narrow. Therefore, a high-definition or high-resolution display device can be obtained.

[0122] There is no particular limitation on the size relationship between the pixel electrode 111a and the first layer 113a, the pixel electrode 111b and the second layer 113b, the pixel electrode 111c and the third layer 113c, etc. FIG. 1B shows an example in which the edge of the pixel electrode 111a and the edge of the first layer 113a are aligned or approximately aligned. FIG. 3A shows an example in which the edge of the first layer 113a is located inside the edge of the pixel electrode 111a. In FIG. 3A, the edge of the first layer 113a is located on the pixel electrode 111a. In FIG. 3B, the edge of the first layer 113a is located outside the edge of the pixel electrode 111a. In FIG. 3B, the first layer 113a is provided so as to cover the edge of the pixel electrode 111a.

[0123] In addition, when the edges are aligned or approximately aligned, and when the top surface shapes are the same or approximately aligned, it can be said that at least a portion of the contours of the stacked layers overlap when viewed from above. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, it is also said that the edges are approximately aligned, or the top surface shapes are approximately aligned.

[0124] 3C shows a modified example of insulating layer 127. In Fig. 3C, the upper surface of insulating layer 127 has a shape that gradually bulges toward the center, i.e., a convex curved surface, in a cross-sectional view, and a shape that is recessed in the center and its vicinity, i.e., a concave curved surface.

[0125] 4A to 4F show the cross-sectional structure of a region 139 including the insulating layer 127 and its surroundings.

[0126] 4A shows an example in which the first layer 113a and the second layer 113b have different thicknesses. The height of the top surface of the insulating layer 125 on the first layer 113a side is the same as or approximately the same as the top surface of the first layer 113a, and the height of the top surface of the second layer 113b on the second layer 113b side is the same as or approximately the same as the top surface of the second layer 113b. The top surface of the insulating layer 127 has a gentle slope, with the first layer 113a side being higher and the second layer 113b side being lower. In this way, the heights of the insulating layers 125 and 127 are preferably the same as the top surfaces of the adjacent EL layers. Alternatively, the insulating layer 125 or the insulating layer 127 may have a flat portion that is the same height as the top surface of one of the adjacent EL layers.

[0127] 4B , the upper surface of insulating layer 127 has a region that is higher than the upper surface of first layer 113 a and the upper surface of second layer 113 b. As shown in FIG. 4B , the upper surface of insulating layer 127 can be configured such that the center and its vicinity bulge in cross section, that is, have a convex curved shape.

[0128] 4C , the upper surface of insulating layer 127 has a shape that gradually bulges toward the center, i.e., a convex curved surface, and a shape that is recessed in the center and its vicinity, i.e., a concave curved surface, in a cross-sectional view. Insulating layer 127 has a region that is higher than the upper surface of first layer 113a and the upper surface of second layer 113b. In region 139, the display device also has at least one of sacrificial layer 118a and sacrificial layer 119a, and has a first region where insulating layer 127 is higher than the upper surfaces of first layer 113a and second layer 113b and located outside insulating layer 125, and the first region is located on at least one of sacrificial layer 118a and sacrificial layer 119a. In addition, in region 139, the display device has at least one of sacrificial layer 118b and sacrificial layer 119b, and has a second region in which insulating layer 127 is higher than the top surface of the first layer 113a and the top surface of the second layer 113b and is located outside insulating layer 125, and the second region is located on at least one of sacrificial layer 118b and sacrificial layer 119b.

[0129] 4D , the upper surface of insulating layer 127 has an area that is lower than the upper surfaces of first layer 113 a and second layer 113 b. In addition, the upper surface of insulating layer 127 has a recessed shape in the center and its vicinity, i.e., a shape having a concave curved surface, in a cross-sectional view.

[0130] 4E, the upper surface of the insulating layer 125 has a region higher than the upper surface of the first layer 113a and the upper surface of the second layer 113b. That is, the insulating layer 125 protrudes from the surface on which the fourth layer 114 is to be formed, forming a convex portion.

[0131] When forming the insulating layer 125, for example, if the insulating layer 125 is formed so that its height is aligned or approximately aligned with that of the sacrificial layer, the insulating layer 125 may be formed in a protruding shape as shown in FIG. 4E.

[0132] 4F, the upper surface of the insulating layer 125 has an area lower than the upper surfaces of the first layer 113a and the second layer 113b. That is, the insulating layer 125 forms a recess on the surface on which the fourth layer 114 is to be formed.

[0133] In this way, the insulating layer 125 and the insulating layer 127 can have various shapes.

[0134] As the sacrificial layer, for example, one or more types of inorganic films such as metal films, alloy films, metal oxide films, semiconductor films, and inorganic insulating films can be used.

[0135] The sacrificial layer can be made of metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, as well as alloy materials containing these metal materials.

[0136] The sacrificial layer can be made of a metal oxide such as In—Ga—Zn oxide. For example, an In—Ga—Zn oxide film can be formed as the sacrificial layer by sputtering. Other examples include indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), and indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide). Alternatively, silicon-containing indium tin oxide can be used.

[0137] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0138] The sacrificial layer can be formed using any of various inorganic insulating films that can be used for the protective layer 131. In particular, an oxide insulating film is preferable because it has higher adhesion to the EL layer than a nitride insulating film. For example, the sacrificial layer can be formed using inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide. For example, an aluminum oxide film can be formed using an ALD method. The ALD method is preferable because it can reduce damage to the base (especially the EL layer). For example, a silicon nitride film can be formed using a sputtering method.

[0139] For example, the sacrificial layer may be a stacked structure of an inorganic insulating film (e.g., an aluminum oxide film) formed by ALD and an In—Ga—Zn oxide film formed by sputtering, or a stacked structure of an inorganic insulating film (e.g., an aluminum oxide film) formed by ALD and an aluminum film, a tungsten film, or an inorganic insulating film (e.g., a silicon nitride film) formed by sputtering.

[0140] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an FMM structure or a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0141] When forming a display device with an FMM structure, there are cases where restrictions are imposed on the pixel arrangement, etc. Here, the FMM structure will be described below.

[0142] When fabricating a display device with an FMM structure, a metal mask (also called an FMM) with openings is set opposite the substrate so that the EL layer is deposited in the desired area during deposition. Then, deposition is performed through the FMM to deposit the EL layer in the desired area. As the substrate size increases, the FMM size and weight also increase. Furthermore, heat and other factors are applied to the FMM during deposition, which can cause deformation of the FMM. Alternatively, deposition can be performed by applying a certain tension to the FMM, so the weight and strength of the FMM are important parameters.

[0143] Therefore, when designing the pixel arrangement configuration of a display device with an FMM structure, the above parameters and the like must be taken into consideration, and consideration must be given under certain restrictions. On the other hand, in a display device according to one embodiment of the present invention, since it is manufactured using an MML structure, it has an excellent effect of providing a higher degree of freedom in the pixel arrangement configuration and the like compared to an FMM structure. Note that this configuration is highly compatible with, for example, flexible devices, and various circuit configurations can be used for either or both of the pixels and the drive circuit.

[0144] In this specification and the like, a structure in which different light-emitting layers are fabricated or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, increasing the freedom of material and configuration selection and facilitating improvements in brightness and reliability.

[0145] In this specification and the like, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. Note that a white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0146] Light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit includes one or more light-emitting layers. When two light-emitting layers are used to obtain white light emission, the light-emitting layers may be selected so that the emission colors of the two light-emitting layers are complementary to each other. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the entire light-emitting device emits white light can be obtained. When three or more light-emitting layers are used to obtain white light emission, the emission colors of the three or more light-emitting layers may be combined to produce a configuration in which the entire light-emitting device emits white light.

[0147] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, light from the light-emitting layers of the light-emitting units may be combined to obtain white light emission. The configuration for obtaining white light emission is the same as that of the single-structure device. In a tandem-structure device, it is preferable to provide a charge-generating layer between the light-emitting units.

[0148] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. When it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the yield can be increased, making it preferable.

[0149] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of the first layer 113 a and the side surface of the second layer 113 b or the distance between the side surface of the second layer 113 b and the side surface of the third layer 113 c has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0150] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members may be disposed on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. The outside of the substrate 120 may also be provided with an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, etc.

[0151] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device and realize a flexible display. A polarizing plate may also be used as the substrate 120.

[0152] The substrate 120 can be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 can also be made of glass having a thickness sufficient to provide flexibility.

[0153] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0154] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0155] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0156] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0157] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets or the like may also be used.

[0158] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0159] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting display devices, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) in light-emitting devices.

[0160] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0161] Next, materials that can be used in light-emitting devices will be described.

[0162] Of the pixel electrode and the common electrode, the electrode from which light is extracted is preferably made of a conductive film that transmits visible light, and the electrode from which light is not extracted is preferably made of a conductive film that reflects visible light.

[0163] The pair of electrodes (pixel electrode and common electrode) of the light-emitting device can be formed from a material such as a metal, an alloy, an electrically conductive compound, or a mixture thereof. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, an aluminum-containing alloy (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver and magnesium, and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of the metals that can be used include aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals. Other examples of the metals that can be used include elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)), rare earth metals such as europium (Eu), and ytterbium (Yb), as well as alloys containing appropriate combinations of these metals, graphene, and the like.

[0164] The light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes of the light-emitting device preferably has a transmissive and reflective electrode for visible light, and the other preferably has a reflective electrode for visible light. By having the light-emitting device have a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0165] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0166] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ Preferably, it is Ωcm or less.

[0167] The first layer 113 a, the second layer 113 b, and the third layer 113 c are each provided in an island shape. Each of the first layer 113 a, the second layer 113 b, and the third layer 113 c has a light-emitting layer. It is preferable that the first layer 113 a, the second layer 113 b, and the third layer 113 c each have a light-emitting layer that emits light of a different color.

[0168] The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0169] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0170] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0171] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0172] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material can be used.

[0173] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0174] The first layer 113 a, the second layer 113 b, and the third layer 113 c may further include, as a layer other than the light-emitting layer, a layer containing a substance with a high hole-injection property, a substance with a high hole-transport property (also referred to as a hole-transport material), a hole-blocking material, a substance with a high electron-transport property (also referred to as an electron-transport material), a substance with a high electron-injection property, an electron-blocking material, a bipolar substance (a substance with high electron-transport property and high hole-transport property, also referred to as a bipolar material), or the like.

[0175] For example, the first layer 113a, the second layer 113b, and the third layer 113c may each include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0176] The EL layer may include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer, as layers commonly formed in the light-emitting devices of each color. For example, a carrier injection layer (hole injection layer or electron injection layer) may be formed as the fourth layer 114. It is also possible to form all layers of the EL layer separately for each color. In other words, the EL layer does not need to include a layer commonly formed in the light-emitting devices of each color.

[0177] Each of the first layer 113a, the second layer 113b, and the third layer 113c preferably includes a light-emitting layer and a carrier transport layer on the light-emitting layer. This prevents the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display device 100, thereby reducing damage to the light-emitting layer. This improves the reliability of the light-emitting device.

[0178] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a substance with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0179] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transporting material. The hole transporting material is a material having a concentration of 1×10 −６ cm２ A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a substance having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0180] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a concentration of 1×10 −６ cm ２ / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0181] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a substance with high electron injection properties. Examples of the substance with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the substance with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0182] The electron injection layer may be formed of, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ｘ, where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO ｘ ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0183] Alternatively, an electron transporting material may be used for the electron injection layer. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring may be used.

[0184] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) of -3.6 eV to -2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0185] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition point (Tg) and is superior in heat resistance compared to BPhen.

[0186] In the case of fabricating a light-emitting device with a tandem structure, a charge-generating layer is provided between two light-emitting units, which has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes.

[0187] For the charge generation layer, for example, a material applicable to an electron injection layer, such as lithium, can be suitably used. For the charge generation layer, for example, a material applicable to a hole injection layer can be suitably used. For the charge generation layer, a layer containing a hole transport material and an acceptor material (electron acceptor material) can be used. For the charge generation layer, a layer containing an electron transport material and a donor material can be used. By forming such a charge generation layer, an increase in driving voltage can be suppressed when light-emitting units are stacked.

[0188] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0189] [Example 1 of Manufacturing Method of Display Device] Next, an example of a manufacturing method of a display device will be described with reference to Fig. 5 and Fig. 6. Fig. 5A to Fig. 5C and Fig. 6A to Fig. 6C show cross-sectional views along dashed dotted lines X1-X2 and Y1-Y2 in Fig. 1A side by side.

[0190] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using a sputtering method, a CVD method, a vacuum deposition method, a PLD method, an ALD method, etc. CVD methods include a PECVD method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD: Metal Organic CVD) method.

[0191] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating, etc.

[0192] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0193] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0194] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0195] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0196] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0197] First, as shown in FIG. 5A , pixel electrodes 111a, 111b, and 111c and a conductive layer 123 are formed on a layer 101 including a transistor, a first layer 113A is formed on the pixel electrodes 111a, 111b, and 111c, a first sacrificial layer 118A is formed on the first layer 113A, and a second sacrificial layer 119A is formed on the first sacrificial layer 118A.

[0198] 5A , in the cross-sectional view between Y1 and Y2, the end of the first layer 113A on the connection portion 140 side is located more inward (closer to the display portion) than the end of the first sacrificial layer 118A. For example, by using a mask for defining the film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), the regions where the first layer 113A, the first sacrificial layer 118A, and the second sacrificial layer 119A are formed can be varied. In one embodiment of the present invention, a light-emitting device is formed using a resist mask. However, by combining the resist mask with an area mask as described above, a light-emitting device can be manufactured through a relatively simple process.

[0199] The pixel electrodes 111a, 111b, and 111c can be formed by the sputtering method or the vacuum deposition method, for example.

[0200] The pixel electrodes 111a, 111b, and 111c are preferably tapered, which improves the coverage of layers formed on the pixel electrodes 111a, 111b, and 111c, and increases the yield of light-emitting devices.

[0201] In this specification and the like, the term "tapered shape" refers to a shape in which at least a part of a side surface of a structure is inclined with respect to a substrate surface or a surface to be formed. For example, it is preferable to have a region in which the angle (also referred to as the taper angle) between the inclined side surface and the substrate surface or the surface to be formed is less than 90°.

[0202] The first layer 113A is a layer that will later become the first layer 113a. Therefore, the above-described structure applicable to the first layer 113a can be applied. The first layer 113A can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method. The first layer 113A is preferably formed by a vapor deposition method. When forming a film using a vapor deposition method, a premixed material may be used. Note that in this specification and the like, a premixed material is a composite material in which multiple materials are blended or mixed in advance.

[0203] The first sacrificial layer 118A and the second sacrificial layer 119A are made of a film that is highly resistant to the processing conditions of the first layer 113A and the second layer 113B and third layer 113C formed in later steps, specifically, a film that has a large etching selectivity with respect to various EL layers.

[0204] The first sacrificial layer 118A and the second sacrificial layer 119A can be formed by, for example, sputtering, ALD (including thermal ALD and PEALD), CVD, or vacuum evaporation. The first sacrificial layer 118A, which is formed on and in contact with the EL layer, is preferably formed using a method that causes less damage to the EL layer than the second sacrificial layer 119A. For example, the first sacrificial layer 118A is preferably formed using ALD or vacuum evaporation rather than sputtering. The first sacrificial layer 118A and the second sacrificial layer 119A are formed at a temperature lower than the heat-resistant temperature limit of the EL layer. The substrate temperature during the formation of the first sacrificial layer 118A and the second sacrificial layer 119A is typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and even more preferably 80° C. or lower.

[0205] It is preferable to use a film that can be removed by wet etching for the first sacrificial layer 118A and the second sacrificial layer 119A, since wet etching can reduce damage to the first layer 113A during processing of the first sacrificial layer 118A and the second sacrificial layer 119A compared to dry etching.

[0206] It is also preferable to use a film for the first sacrificial layer 118A that has a large etching selectivity with respect to the second sacrificial layer 119A.

[0207] In the process of processing the various sacrificial layers in the manufacturing method of the display device of this embodiment, it is desirable that the layers constituting the EL layer (such as the hole injection layer, the hole transport layer, the light-emitting layer, and the electron transport layer) are not easily processed, and that the various sacrificial layers are not easily processed in the process of processing the layers constituting the EL layer. It is desirable to select the material and processing method of the sacrificial layer and the processing method of the EL layer taking these factors into consideration.

[0208] In this embodiment, an example is shown in which the sacrificial layer is formed with a two-layer structure of a first sacrificial layer and a second sacrificial layer, but the sacrificial layer may have a single-layer structure or a stacked structure of three or more layers.

[0209] The first sacrificial layer 118A and the second sacrificial layer 119A can each be made of, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic film such as an inorganic insulating film.

[0210] The first sacrificial layer 118A and the second sacrificial layer 119A can each be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. In particular, it is preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet light for one or both of the first sacrificial layer 118A and the second sacrificial layer 119A can prevent the EL layer from being exposed to ultraviolet light and suppress deterioration of the EL layer, which is preferable.

[0211] The first sacrificial layer 118A and the second sacrificial layer 119A can each be made of a metal oxide such as In—Ga—Zn oxide. For example, an In—Ga—Zn oxide film can be formed as the first sacrificial layer 118A or the second sacrificial layer 119A by sputtering. Other examples include indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), and indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide). Alternatively, indium tin oxide containing silicon can also be used.

[0212] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0213] The first sacrificial layer 118A and the second sacrificial layer 119A can each be made of any of the various inorganic insulating films that can be used for the protective layer 131. In particular, oxide insulating films are preferable because they have higher adhesion to the EL layer than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the first sacrificial layer 118A and the second sacrificial layer 119A. For example, an aluminum oxide film can be formed as the first sacrificial layer 118A or the second sacrificial layer 119A by the ALD method. The ALD method is preferable because it can reduce damage to the underlying layer (particularly the EL layer).

[0214] For example, the first sacrificial layer 118A can be an inorganic insulating film (e.g., an aluminum oxide film) formed using an ALD method, and the second sacrificial layer 119A can be an inorganic film (e.g., an In—Ga—Zn oxide film, an aluminum film, or a tungsten film) formed using a sputtering method.

[0215] The same inorganic insulating film can be used for both the first sacrificial layer 118A and the insulating layer 125 to be formed later. For example, an aluminum oxide film formed using an ALD method can be used for both the first sacrificial layer 118A and the insulating layer 125. The first sacrificial layer 118A and the insulating layer 125 may be formed under the same deposition conditions, or different deposition conditions. For example, by forming the first sacrificial layer 118A under the same conditions as the insulating layer 125, the first sacrificial layer 118A can be an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the first sacrificial layer 118A is a layer that is removed mostly or entirely in a later process, it is preferable that it be easily processed. Therefore, the first sacrificial layer 118A is preferably formed under conditions where the substrate temperature during deposition is lower than that of the insulating layer 125.

[0216] One or both of the first sacrificial layer 118A and the second sacrificial layer 119A may be made of a material that is soluble in a solvent that is chemically stable with respect to at least the film located on the top of the first layer 113A. In particular, a material that dissolves in water or alcohol is preferably used. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature in a short time, thereby reducing thermal damage to the EL layer.

[0217] The first sacrificial layer 118A and the second sacrificial layer 119A may each be formed using a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0218] The first sacrificial layer 118A and the second sacrificial layer 119A may each be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0219] 5A, a resist mask 190a is formed on the second sacrificial layer 119A. The resist mask can be formed by applying a photosensitive resin (photoresist) and then performing exposure and development.

[0220] The resist mask may be made of either a positive resist material or a negative resist material.

[0221] The resist mask 190a is provided at a position overlapping the pixel electrode 111a. Preferably, the resist mask 190a has an island-shaped pattern for each sub-pixel 110a. Alternatively, the resist mask 190a may have a strip-shaped pattern for a plurality of sub-pixels 110a arranged in a line (arranged in the Y direction in FIG. 1A).

[0222] Here, if the resist mask 190 is formed so that the edge of the resist mask 190 is positioned outside the edge of the pixel electrode 111a, the edge of the first layer 113a to be formed later can be positioned outside the edge of the pixel electrode 111a.

[0223] On the other hand, if the resist mask 190 is formed so that the end of the resist mask 190 is located inside the end of the pixel electrode 111a, the end of the first layer 113a to be formed later can be located inside the end of the pixel electrode 111a.

[0224] Note that the resist mask 190a is preferably provided also in a position overlapping with the connection portion 140. This can prevent the conductive layer 123 from being damaged during the manufacturing process of the display device.

[0225] 5B, a resist mask 190a is used to remove a portion of the second sacrificial layer 119A to form a sacrificial layer 119a. The sacrificial layer 119a remains on the pixel electrode 111a and the conductive layer 123.

[0226] When etching the second sacrificial layer 119A, it is preferable to use etching conditions with a high selectivity so that the first sacrificial layer 118A is not removed by the etching. Furthermore, since the EL layer is not exposed when processing the second sacrificial layer 119A, the range of processing methods available is wider than when processing the first sacrificial layer 118A. Specifically, even when a gas containing oxygen is used as an etching gas when processing the second sacrificial layer 119A, deterioration of the EL layer can be further suppressed.

[0227] Thereafter, the resist mask 190a is removed. For example, the resist mask 190a can be removed by ashing using oxygen plasma. Alternatively, the resist mask 190a can be removed by ashing using oxygen gas and CF ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ Alternatively, a noble gas (also referred to as a rare gas) such as He may be used. Alternatively, the resist mask 190a may be removed by wet etching. At this time, the first sacrificial layer 118A is located on the outermost surface and the first layer 113A is not exposed, so that damage to the first layer 113A can be suppressed in the process of removing the resist mask 190a. Furthermore, the range of options for removing the resist mask 190a can be expanded.

[0228] Next, as shown in FIG. 5C, the sacrificial layer 119a is used as a mask (also referred to as a hard mask) to remove part of the first sacrificial layer 118A, thereby forming a sacrificial layer 118a.

[0229] The first sacrificial layer 118A and the second sacrificial layer 119A can be processed by wet etching or dry etching, respectively. The first sacrificial layer 118A and the second sacrificial layer 119A are preferably processed by anisotropic etching.

[0230] Compared to the case of using dry etching, the use of wet etching can reduce damage to the first layer 113A during processing of the first sacrificial layer 118A and the second sacrificial layer 119A. When using wet etching, it is preferable to use, for example, a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed solution containing two or more of these.

[0231] When dry etching is used, deterioration of the first layer 113A can be suppressed by not using a gas containing oxygen as an etching gas. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing a noble gas (also called a rare gas) such as He as the etching gas.

[0232] For example, when an aluminum oxide film formed by ALD is used as the first sacrificial layer 118A, CHF ３ The first sacrificial layer 118A can be processed by dry etching using He. When an In-Ga-Zn oxide film formed by sputtering is used as the second sacrificial layer 119A, the second sacrificial layer 119A can be processed by wet etching using diluted phosphoric acid. ４ The second sacrificial layer 119A may be processed by dry etching using Ar and diluted phosphoric acid. Alternatively, the second sacrificial layer 119A may be processed by wet etching using diluted phosphoric acid. When a tungsten film formed by sputtering is used as the second sacrificial layer 119A, CF ４ and O ２ , SF ６ and O ２ , C.F. ４ and Cl ２ and O ２ , or SF ６ and Cl ２ and O２ The second sacrificial layer 119A can be processed by dry etching using the above.

[0233] Next, as shown in FIG. 5C, the sacrificial layers 119a and 118a are used as a hard mask to remove a portion of the first layer 113A, thereby forming a first layer 113a.

[0234] 5C , a laminated structure of the first layer 113a, the sacrificial layer 118a, and the sacrificial layer 119a remains on the pixel electrode 111a. In addition, in the region corresponding to the connection portion 140, a laminated structure of the sacrificial layer 118a and the sacrificial layer 119a remains on the conductive layer 123.

[0235] 5C shows an example in which the edge of the first layer 113a is positioned outside the edge of the pixel electrode 111a. With this configuration, the aperture ratio of the pixel can be increased.

[0236] Furthermore, because the first layer 113a covers the top and side surfaces of the pixel electrode 111a, subsequent processes can be performed without exposing the pixel electrode 111a. If the edges of the pixel electrode 111a are exposed, corrosion may occur during etching processes, etc. Products resulting from corrosion of the pixel electrode 111a may be unstable, dissolving in solution during wet etching, or scattering into the atmosphere during dry etching. Dissolving the products into solution or scattering into the atmosphere may result in the products adhering to, for example, the processed surface and the side surfaces of the first layer 113a, potentially adversely affecting the characteristics of the light-emitting device or forming leak paths between multiple light-emitting devices. Furthermore, in regions where the edges of the pixel electrode 111a are exposed, the adhesion between adjacent layers may be reduced, potentially making the first layer 113a or the pixel electrode 111a more susceptible to peeling.

[0237] By configuring the first layer 113a to cover the upper and side surfaces of the pixel electrode 111a, for example, the yield of the light-emitting device can be improved, and the display quality of the light-emitting device can be improved.

[0238] As shown in Fig. 1B, the edge of the pixel electrode 111a and the edge of the first layer 113a may be aligned or approximately aligned. Alternatively, as shown in Fig. 3A, the edge of the first layer 113a may be located more inward than the edge of the pixel electrode 111a.

[0239] Note that a part of the first layer 113A may be removed using the resist mask 190a, and then the resist mask 190a may be removed.

[0240] The first layer 113A is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching.

[0241] When dry etching is used, deterioration of the first layer 113A can be suppressed by not using a gas containing oxygen as an etching gas.

[0242] Alternatively, a gas containing oxygen may be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can suppress damage to the first layer 113A. Furthermore, adhesion of reaction products generated during etching can be suppressed.

[0243] When dry etching is used, for example, H ２ , C.F. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing one or more of the following gases as the etching gas: H, Ar, or a noble gas (also called a rare gas). Alternatively, it is preferable to use a gas containing one or more of these gases and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, H ２ and a gas containing Ar, or CF ４ A gas containing CF and He can be used as an etching gas.４ A gas containing He and oxygen can be used as the etching gas.

[0244] Through the above steps, regions of the first layer 113A, the first sacrificial layer 118A, and the second sacrificial layer 119A that do not overlap with the resist mask 190a can be removed.

[0245] Next, as shown in FIG. 6A, a second layer 113B is formed on the sacrificial layer 119a, the pixel electrode 111b, and the pixel electrode 111c, a first sacrificial layer 118B is formed on the second layer 113B, and a second sacrificial layer 119B is formed on the first sacrificial layer 118B.

[0246] As shown in FIG. 6A, in the cross section taken along line Y1-Y2, the end of second layer 113B on the connection section 140 side is located more inward (toward the display section) than the end of first sacrificial layer 118B.

[0247] The second layer 113B is a layer that will later become the second layer 113b. The second layer 113b emits light of a different color from that of the first layer 113a. The structure, materials, and the like that can be applied to the second layer 113b are similar to those of the first layer 113a. The second layer 113B can be formed using a method similar to that for the first layer 113A.

[0248] The first sacrificial layer 118B can be formed using a material that can be used for the first sacrificial layer 118A. The second sacrificial layer 119B can be formed using a material that can be used for the second sacrificial layer 119A.

[0249] Next, as shown in FIG. 6A, a resist mask 190b is formed on the second sacrificial layer 119B.

[0250] The resist mask 190b is provided at a position overlapping the pixel electrode 111b. The resist mask 190b may also be provided at a position overlapping the region that will become the connection portion 140 later.

[0251] Next, by performing a process similar to that described using Figures 5B and 5C, areas of the second layer 113B, the first sacrificial layer 118B, and the second sacrificial layer 119B that do not overlap with the resist mask 190b are removed.

[0252] 6B, a stacked structure of the second layer 113b, the sacrificial layer 118b, and the sacrificial layer 119b remains on the pixel electrode 111b. In addition, in the region corresponding to the connection portion 140, a stacked structure of the sacrificial layer 118a and the sacrificial layer 119a remains on the conductive layer 123.

[0253] Next, as shown in FIG. 6B, a third layer 113C is formed on the sacrificial layer 119a, the sacrificial layer 119b, and the pixel electrode 111c, a first sacrificial layer 118C is formed on the third layer 113C, and a second sacrificial layer 119C is formed on the first sacrificial layer 118C.

[0254] As shown in FIG. 6B, in the cross section taken along line Y1-Y2, the end of the third layer 113C on the connection section 140 side is located more inward (toward the display section) than the end of the first sacrificial layer 118C.

[0255] The third layer 113C is a layer that will later become the third layer 113c. The third layer 113c emits light of a different color from the first layer 113a and the second layer 113b. The structure, materials, and the like that can be applied to the third layer 113c are similar to those of the first layer 113a. The third layer 113C can be formed using a method similar to that for the first layer 113A.

[0256] The first sacrificial layer 118C can be formed using a material that can be used for the first sacrificial layer 118A. The second sacrificial layer 119C can be formed using a material that can be used for the second sacrificial layer 119A.

[0257] Next, as shown in FIG. 6B, a resist mask 190c is formed on the second sacrificial layer 119C.

[0258] The resist mask 190c is provided at a position overlapping the pixel electrode 111c. The resist mask 190c may also be provided at a position overlapping the region that will become the connection portion 140 later.

[0259] Next, by performing a process similar to that described using Figures 5B and 5C, areas of the third layer 113C, the first sacrificial layer 118C, and the second sacrificial layer 119C that do not overlap with the resist mask 190c are removed.

[0260] 6C, a stacked structure of the third layer 113c, the sacrificial layer 118c, and the sacrificial layer 119c remains on the pixel electrode 111c. In addition, in the region corresponding to the connection portion 140, a stacked structure of the sacrificial layer 118a and the sacrificial layer 119a remains on the conductive layer 123.

[0261] Note that the side surfaces of the first layer 113 a, the second layer 113 b, and the third layer 113 c are preferably perpendicular or substantially perpendicular to the surface on which they are to be formed. For example, the angle formed between the surface on which they are to be formed and the side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0262] 7A , the sacrificial layers 119 a, 119 b, and 119 c are removed, thereby exposing the sacrificial layer 118 a on the pixel electrode 111 a, the sacrificial layer 118 b on the pixel electrode 111 b, the sacrificial layer 118 c on the pixel electrode 111 c, and the sacrificial layer 118 a on the conductive layer 123.

[0263] As will be described later in a second example of a manufacturing method, the process may proceed to the step of forming the insulating film 125A without removing the sacrificial layers 119a, 119b, and 119c.

[0264] The sacrificial layer removal process can be performed using a method similar to that used in the sacrificial layer processing process. In particular, by using a wet etching method, damage to the first layer 113 a, the second layer 113 b, and the third layer 113 c during the removal of the sacrificial layer can be reduced compared to when a dry etching method is used.

[0265] The sacrificial layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0266] After removing the sacrificial layer, a drying treatment may be performed to remove water contained in the EL layer and water adsorbed on the surface of the EL layer. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced pressure atmosphere is preferred because it allows drying at a lower temperature.

[0267] Next, as shown in FIG. 7A, an insulating film 125A is formed so as to cover the first layer 113a, the second layer 113b, the third layer 113c, and the sacrificial layers 118a, 118b, and 118c.

[0268] The insulating film 125A is a layer that will later become the insulating layer 125. Therefore, the insulating film 125A can be made of a material that can be used for the insulating layer 125.

[0269] As the insulating film 125A, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less under conditions in which the substrate temperature is, for example, 60°C or more, 80°C or more, 100°C or more, or 120°C or more and 200°C or less, 180°C or less, 160°C or less, 150°C or less, or 140°C or less.

[0270] The insulating film 125A is preferably an aluminum oxide film formed by, for example, ALD, because ALD can reduce film formation damage and can form a film with high coverage.

[0271] Next, as shown in FIG. 7A, an insulating layer 127 is formed on the insulating film 125A.

[0272] The insulating layer 127 can be made of the organic material described above.

[0273] The insulating layer 127 can be patterned by applying a photosensitive resin, exposing it to light, and developing it.

[0274] Etching may be performed to adjust the height of the surface of the insulating layer 127. The insulating layer 127 may be processed by ashing using oxygen plasma, for example.

[0275] There are no particular limitations on the method for forming the film that will become the insulating layer 127, and the film can be formed using a wet film-forming method such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, knife coating, etc. In particular, it is preferable to form the organic insulating film that will become the insulating layer 127 by spin coating.

[0276] The insulating film 125A and the insulating layer 127 are preferably formed by a formation method that causes less damage to the EL layer. In particular, since the insulating film 125A is formed in contact with the side surface of the EL layer, it is preferably formed by a formation method that causes less damage to the EL layer than the insulating layer 127. Furthermore, the insulating film 125A and the insulating layer 127 are each formed at a temperature lower than the heat resistance temperature of the EL layer. The substrate temperature when forming the insulating film 125A and the insulating layer 127 is typically 200° C. or lower, preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 150° C. or lower, and more preferably 140° C. or lower.

[0277] Next, as shown in FIG. 7B, the insulating film 125A and at least a portion of the sacrificial layers 118a, 118b, and 118c are removed to expose the first layer 113a, the second layer 113b, the third layer 113c, and the conductive layer 123.

[0278] The sacrificial layers 118a, 118b, and 118c and the insulating film 125A may be removed in separate steps or in the same step. For example, if the sacrificial layers 118a, 118b, and 118c and the insulating film 125A are films formed using the same material, they can be removed in the same step, which is preferable. For example, it is preferable to form the sacrificial layers 118a, 118b, and 118c and the insulating film 125A by an ALD method, and it is more preferable to form an aluminum oxide film by an ALD method.

[0279] 7B, the region of the insulating film 125A that overlaps with the insulating layer 127 remains as the insulating layer 125. Furthermore, the regions of the sacrificial layers 118a, 118b, and 118c that overlap with the insulating layer 127 also remain.

[0280] In this manner, the display device of one embodiment of the present invention can have a structure in which the sacrificial layers remain. Note that depending on the shape of the insulating layer 127, all of the sacrificial layers 118a, 118b, and 118c may be removed. Therefore, the sacrificial layers 118a, 118b, and 118c do not necessarily remain in the display device.

[0281] The insulating layer 125 (and further the insulating layer 127) is provided so as to cover the side surfaces of the pixel electrodes 111a, 111b, 111c, the first layer 113a, the second layer 113b, and the third layer 113c. This prevents films to be formed later from coming into contact with the side surfaces of these layers, thereby preventing the light-emitting device from shorting out. Furthermore, this also prevents damage to the pixel electrodes 111a, 111b, 111c, the first layer 113a, the second layer 113b, and the third layer 113c in later processes.

[0282] The sacrificial layers 118a, 118b, and 118c can be removed using the same method as that used in the sacrificial layer processing step. The sacrificial layers 119a, 119b, and 119c can be removed using the same method as that used in the sacrificial layer processing step.

[0283] The insulating film 125A is preferably processed by dry etching. The insulating film 125A is preferably processed by anisotropic etching. The insulating film 125A can be processed using an etching gas that can be used when processing a sacrificial layer.

[0284] Next, as shown in FIG. 7C, a fourth layer 114 is formed to cover the insulating layer 125, the insulating layer 127, the first layer 113a, the second layer 113b, and the third layer 113c.

[0285] The cross-sectional view taken along line Y1-Y2 in Figure 7C shows an example in which the fourth layer 114 is not provided on the connection portion 140. As shown in Figure 7C, the end of the fourth layer 114 on the connection portion 140 side is preferably located more inward than the connection portion 140. For example, when forming the fourth layer 114, it is preferable to use a mask to define the film formation area. Furthermore, depending on the level of conductivity of the fourth layer 114, the fourth layer 114 may be provided on the connection portion 140.

[0286] The materials that can be used for the fourth layer 114 are as described above. The fourth layer 114 can be formed by a method such as a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, or a coating method. The fourth layer 114 may also be formed using a premixed material.

[0287] The fourth layer 114 is provided to cover the top surfaces of the first layer 113a, the second layer 113b, and the third layer 113c, as well as the top surface and side surfaces of the insulating layer 127. If the fourth layer 114 has high conductivity, contact between the fourth layer 114 and any side surface of the pixel electrodes 111a, 111b, and 111c, or the first layer 113a, the second layer 113b, or the third layer 113c, may cause a short circuit in the light-emitting device. However, in the display device of one embodiment of the present invention, the insulating layers 125 and 127 cover the side surfaces of the pixel electrodes 111a, 111b, and 111c, or the first layer 113a, the second layer 113b, and the third layer 113c, thereby preventing the highly conductive fourth layer 114 from contacting these layers, thereby preventing a short circuit in the light-emitting device. This can improve the reliability of the light emitting device.

[0288] Furthermore, since the insulating layers 125 and 127 are filled between the first layer 113a and the second layer 113b and between the second layer 113b and the third layer 113c, the surface on which the fourth layer 114 is to be formed has smaller steps and is flatter than when the insulating layers 125 and 127 are not provided. This allows the coverage of the fourth layer 114 to be improved.

[0289] 7C, the common electrode 115 is formed on the fourth layer 114 and the conductive layer 123. As a result, the conductive layer 123 and the common electrode 115 are in direct contact with each other, and are electrically connected to each other.

[0290] A mask for defining a film formation area may be used when forming the common electrode 115. Alternatively, the mask may not be used when forming the common electrode 115, and the common electrode 115 may be processed using a resist mask or the like after the common electrode 115 is formed.

[0291] The materials that can be used for the common electrode 115 are as described above. The common electrode 115 can be formed by, for example, sputtering or vacuum deposition. Alternatively, a film formed by deposition and a film formed by sputtering may be stacked.

[0292] Thereafter, a protective layer 131 is formed on the common electrode 115. Furthermore, a substrate 120 is bonded onto the protective layer 131 using a resin layer 122, thereby manufacturing the display device 100 shown in Fig. 1B. Note that Fig. 1B illustrates an example in which a fourth layer 114 is provided in the connection portion 140, and the conductive layer 123 and the common electrode 115 are electrically connected to each other via the fourth layer 114.

[0293] The materials and film formation methods that can be used for the protective layer 131 are as described above. Examples of the film formation method for the protective layer 131 include a vacuum deposition method, a sputtering method, a CVD method, and an ALD method. The protective layer 131 may have a single-layer structure or a multilayer structure.

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[0295] In Fabrication Method Example 2, the step shown in Fig. 8A is performed after the step shown in Fig. 6C. Note that detailed description of the same parts as in Fabrication Method Example 1 may be omitted.

[0296] In the present manufacturing method example 2, the sacrificial layers 119a, 119b, and 119c are not removed, and the insulating film 125A is formed on the sacrificial layers 119a, 119b, and 119c, and the insulating layer 127 is formed on the insulating film 125A.

[0297] Next, at least a portion of the insulating film 125A, the sacrificial layers 119a, 119b, 119c, and the sacrificial layers 118a, 118b, 118c is removed to expose the first layer 113a, the second layer 113b, and the third layer 113c.

[0298] The sacrificial layers 119a, 119b, and 119c and the sacrificial layers 118a, 118b, and 118c may be removed in separate steps or in the same step. The sacrificial layers 118a, 118b, and 118c and the insulating film 125A may be removed in separate steps or in the same step. The sacrificial layers 119a, 119b, and 119c, the sacrificial layers 118a, 118b, and 118c, and the insulating film 125A may be removed all at once.

[0299] 8A , a region of the insulating film 125A that overlaps with the insulating layer 127 remains as the insulating layer 125. Furthermore, regions of the sacrificial layers 119a, 119b, and 119c and the sacrificial layers 118a, 118b, and 118c that overlap with the insulating layer 127 also remain.

[0300] In this manner, the display device of one embodiment of the present invention may have a structure in which not only the first sacrificial layer but also the second sacrificial layer remains.

[0301] Then, as shown in FIG. 8A, a fourth layer 114 can be formed on the first layer 113a, the second layer 113b, and the third layer 113c, and a common electrode 115 can be formed on the fourth layer 114.

[0302] 8B and 8C show a cross-sectional view taken along dashed lines X1-X2 and Y1-Y2 in FIG.

[0303] In this manufacturing method example 3, a manufacturing method will be described in which EL layers having the same configuration are formed in all sub-pixels.

[0304] For example, when a full-color display device is fabricated by combining a white-emitting light-emitting device with a color filter, or by combining a blue-emitting light-emitting device with a color conversion layer, it may be possible to apply EL layers of the same configuration to all sub-pixels.

[0305] Even when EL layers having the same configuration are formed in all subpixels, it is preferable to form at least a portion of the EL layer in each subpixel in an island shape. The EL layer may also include a layer with relatively high conductivity. When a highly conductive layer is shared by multiple subpixels, leakage current may occur between the multiple subpixels. In particular, when the distance between subpixels is small, such as in high-resolution display devices or display devices with a high aperture ratio, the leakage current may become significant, potentially degrading the display quality of the display device. Forming at least a portion of the EL layer in an island shape can suppress leakage current flow between adjacent subpixels, thereby improving the display quality of the display device. In other words, a display device with a high contrast ratio can be realized by combining a white-emitting light-emitting device, a color filter, and the MML structure of one embodiment of the present invention. Furthermore, a display device with a high contrast ratio can be realized by combining a blue-emitting light-emitting device, a color conversion layer, and the MML structure of one embodiment of the present invention.

[0306] First, the pixel electrodes 111a, 111b, and 111c and the conductive layer 123 are formed over the layer 101 including a transistor, similarly to Manufacturing Method Example 1. Then, as shown in FIG. 8B , the EL layer 113 is formed over the pixel electrodes 111a, 111b, and 111c and the conductive layer 123, a first sacrificial layer 118A is formed over the EL layer 113, and a second sacrificial layer 119A is formed over the first sacrificial layer 118A.

[0307] 8B, a resist mask 190 is formed on the second sacrificial layer 119A. The resist mask 190 is provided at a position overlapping with the pixel electrodes 111a, 111b, and 111c and the conductive layer 123, respectively.

[0308] Here, if the resist mask 190 is formed so that the edge of the resist mask 190 is positioned outside the edge of the pixel electrode 111a, the edge of the first layer 113a to be formed later can be provided outside the edge of the pixel electrode 111a. Similarly, if the edge of the resist mask 190 is positioned outside the edge of the pixel electrode 111b, the edge of the second layer 113b to be formed later can be provided outside the edge of the pixel electrode 111b. Furthermore, if the edge of the resist mask 190 is positioned outside the edge of the pixel electrode 111c, the edge of the third layer 113c to be formed later can be provided outside the edge of the pixel electrode 111c.

[0309] On the other hand, if the resist mask 190 is formed so that the edge of the resist mask 190 is located inside the edge of the pixel electrode 111a, the edge of the first layer 113a to be formed later can be located inside the edge of the pixel electrode 111a. Similarly, if the edge of the resist mask 190 is located inside the edge of the pixel electrode 111b, the edge of the second layer 113b to be formed later can be located inside the edge of the pixel electrode 111b. Furthermore, if the edge of the resist mask 190 is located inside the edge of the pixel electrode 111c, the edge of the third layer 113c to be formed later can be located inside the edge of the pixel electrode 111c.

[0310] Note that the resist mask 190 is preferably provided also in a position overlapping with the connection portion 140. This can prevent the conductive layer 123 from being damaged during the manufacturing process of the display device.

[0311] Then, similarly to Manufacturing Method Example 1, a sacrificial layer 119a is formed using a resist mask 190, and after removing the resist mask 190, a sacrificial layer 118a is formed using the sacrificial layer 119a as a mask. Then, parts of the EL layer 113 are removed using the sacrificial layers 119a and 118a as masks. As a result, as shown in FIG. 8C , the first layer 113a, the second layer 113b, and the third layer 113c can be formed. The first layer 113a, the second layer 113b, and the third layer 113c are formed by processing the EL layer 113 and therefore have the same structure.

[0312] In Manufacturing Method Example 1, the first layer 113a, the second layer 113b, and the third layer 113c are formed using different films, so the EL layer is processed three times using a resist mask. On the other hand, in Manufacturing Method Example 3, the first layer 113a, the second layer 113b, and the third layer 113c can be formed by processing the EL layer only once using a resist mask. This reduces the number of manufacturing steps, which is preferable.

[0313] After the step shown in Fig. 8C, the process can proceed to the step shown in Fig. 7A or the step shown in Fig. 8A. Therefore, the following steps can be described with reference to the first and second fabrication methods.

[0314] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped EL layer is formed by forming the EL layer on the entire surface and then processing it, rather than by using a fine metal mask, so that the island-shaped EL layer can be formed with a uniform thickness, and a high-definition display device or a display device with a high aperture ratio can be realized.

[0315] The first, second, and third layers constituting the light-emitting device of each color are formed in separate processes. Therefore, each EL layer can be fabricated with a configuration (material, film thickness, etc.) suitable for the light-emitting device of each color. This allows the fabrication of light-emitting devices with excellent characteristics.

[0316] A display device according to one embodiment of the present invention includes an insulating layer covering each side surface of the light-emitting layer and the carrier transport layer. In a manufacturing process of the display device, the EL layer is processed in a state in which the light-emitting layer and the carrier transport layer are stacked. Therefore, the display device has a structure in which damage to the light-emitting layer is reduced. Furthermore, the insulating layer prevents the EL layer formed in an island shape from contacting the carrier injection layer or the common electrode, thereby preventing a short circuit of the light-emitting device.

[0317] Furthermore, by using an insulating layer having a low impurity concentration (for example, one of hydrogen concentration and carbon concentration, preferably both) as the insulating layer, the barrier property against at least one of water and oxygen can be improved, thereby preventing at least one of water and oxygen from penetrating from the insulating layer into the EL layer and causing deterioration of the EL layer.

[0318] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0319] Embodiment 2 In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0320] [Pixel Layout] In this embodiment, pixel layouts different from that shown in FIG. 1A will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0321] Examples of the top surface shape of the subpixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. Here, the top surface shape of the subpixel corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0322] An S-stripe arrangement is applied to the pixel 110 shown in Fig. 9A. The pixel 110 shown in Fig. 9A is composed of three subpixels: subpixels 110a, 110b, and 110c. For example, as shown in Fig. 11A, the subpixel 110a may be a blue subpixel B, the subpixel 110b may be a red subpixel R, and the subpixel 110c may be a green subpixel G.

[0323] The pixel 110 shown in FIG. 9B includes a subpixel 110a having a generally trapezoidal top surface shape with rounded corners, a subpixel 110b having a generally triangular top surface shape with rounded corners, and a subpixel 110c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 110a has a larger light-emitting area than the subpixel 110b. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size can be. For example, as shown in FIG. 11B, the subpixel 110a may be a green subpixel G, the subpixel 110b may be a red subpixel R, and the subpixel 110c may be a blue subpixel B.

[0324] The pixels 124a and 124b shown in Fig. 9C are arranged in a Pentile arrangement. Fig. 9C shows an example in which a pixel 124a having subpixels 110a and 110b and a pixel 124b having subpixels 110b and 110c are arranged alternately. For example, as shown in Fig. 11C, the subpixel 110a may be a red subpixel R, the subpixel 110b may be a green subpixel G, and the subpixel 110c may be a blue subpixel B.

[0325] The pixels 124a and 124b shown in Figures 9D and 9E are arranged in a delta configuration. The pixel 124a has two subpixels (subpixels 110a and 110b) in the top row (first row) and one subpixel (subpixel 110c) in the bottom row (second row). The pixel 124b has one subpixel (subpixel 110c) in the top row (first row) and two subpixels (subpixels 110a and 110b) in the bottom row (second row). For example, as shown in Figure 11D, the subpixel 110a may be a red subpixel R, the subpixel 110b may be a green subpixel G, and the subpixel 110c may be a blue subpixel B.

[0326] FIG. 9D shows an example in which each subpixel has a substantially rectangular top surface shape with rounded corners, and FIG. 9E shows an example in which each subpixel has a circular top surface shape.

[0327] 9F shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper edges of two subpixels arranged in the column direction (e.g., subpixels 110a and 110b, or subpixels 110b and 110c) are misaligned. For example, as shown in FIG. 11E, the subpixel 110a may be a red subpixel R, the subpixel 110b may be a green subpixel G, and the subpixel 110c may be a blue subpixel B.

[0328] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0329] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0330] In order to form the top surface of the EL layer into a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0331] In addition, even in the pixel 110 to which the stripe arrangement shown in FIG. 1A is applied, for example, as shown in FIG. 11F, the subpixel 110a can be a red subpixel R, the subpixel 110b can be a green subpixel G, and the subpixel 110c can be a blue subpixel B.

[0332] As shown in Figures 10A to 10H, a pixel can be configured to have four types of sub-pixels.

[0333] The pixel 110 shown in FIGS. 10A to 10C is configured in a stripe arrangement.

[0334] FIG. 10A shows an example in which each subpixel has a rectangular top surface shape, FIG. 10B shows an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and FIG. 10C shows an example in which each subpixel has an elliptical top surface shape.

[0335] The pixels 110 shown in FIGS. 10D to 10F are arranged in a matrix.

[0336] Figure 10D is an example in which each subpixel has a square top surface shape, Figure 10E is an example in which each subpixel has an approximately square top surface shape with rounded corners, and Figure 10F is an example in which each subpixel has a circular top surface shape.

[0337] 10G and 10H show an example in which one pixel 110 is configured in two rows and three columns.

[0338] 10G has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, the pixel 110 has the subpixel 110a in the left column (first column), the subpixel 110b in the center column (second column), the subpixel 110c in the right column (third column), and the subpixels 110d across these three columns.

[0339] The pixel 110 shown in FIG. 10H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels 110d in the bottom row (second row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (first column), subpixels 110b and 110d in the center column (second column), and subpixels 110c and 110d in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 10H, it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0340] The pixel 110 shown in Figures 10A to 10H is composed of four subpixels: subpixels 110a, 110b, 110c, and 110d. Each of the subpixels 110a, 110b, 110c, and 110d has an emissive device that emits light of a different color. The subpixels 110a, 110b, 110c, and 110d may be subpixels of four colors: R, G, B, and white (W), subpixels of four colors: R, G, B, and Y, or subpixels of R, G, B, and infrared light (IR). For example, as shown in Figures 11G to 11J, the subpixels 110a, 110b, 110c, and 110d may be subpixels of red, green, blue, and white, respectively.

[0341] The display device according to one embodiment of the present invention may include a light-receiving device in a pixel.

[0342] Of the four types of sub-pixels included in the pixel 110 shown in FIGS. 11G to 11J, three may be configured to have a light-emitting device, and the remaining one may be configured to have a light-receiving device.

[0343] The light receiving device may be, for example, a pn-type or pin-type photodiode. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0344] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0345] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL device.

[0346] The light-receiving device has an active layer that functions as at least a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode and the other as a common electrode.

[0347] For example, the subpixels 110a, 110b, and 110c may be subpixels of three colors, R, G, and B, and the subpixel 110d may be a subpixel having a light receiving device.

[0348] Of the pair of electrodes that a light-receiving device has, one electrode functions as an anode and the other electrode functions as a cathode. The following describes an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode. The light-receiving device can detect light incident on the light-receiving device, generate electric charges, and extract them as a current by applying a reverse bias between the pixel electrode and the common electrode. Alternatively, the pixel electrode may function as a cathode and the common electrode may function as an anode.

[0349] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called a photoelectric conversion layer) of the light-receiving device is formed by depositing a film to become the active layer on the entire surface and then processing it, rather than using a fine metal mask. Therefore, the island-shaped active layer can be formed with a uniform thickness. Furthermore, by providing a sacrificial layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0350] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same function in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0351] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0352] The n-type semiconductor material of the active layer is fullerene (e.g., C ６０ Fullerene, C ７０ Examples of electron-accepting organic semiconductor materials include fullerenes and fullerene derivatives. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties cause charge separation quickly and efficiently, making them useful as light-receiving devices. C ６０ , C ７０Both have a wide absorption band in the visible light region, and C ７０ Fullerene is C ６０ Compared to fullerene, it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region, making it preferable. ７１ -Butyric acid methyl ester (abbreviation: PC ７０ BM), [6,6]-Phenyl-C ６１ -Butyric acid methyl ester (abbreviation: PC ６０ BM), 1', 1'', 4', 4''-Tetrahydro-di [1, 4] methanonaphthaleno [1, 2: 2', 3', 56, 60: 2'', 3''] [5, 6] fullerene-C ６０ (abbreviation: ICBA) and others.

[0353] Furthermore, examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0354] An example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0355] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0356] Examples of the p-type semiconductor material of the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin(II) phthalocyanine (SnPc), quinacridone, and rubrene.

[0357] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0358] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0359] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0360] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0361] The light-receiving device may further include, as a layer other than the active layer, a layer containing a substance with high hole-transporting properties, a substance with high electron-transporting properties, a bipolar substance (a substance with high electron-transporting properties and high hole-transporting properties), etc. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing a substance with high hole-injecting properties, a hole-blocking material, a substance with high electron-injecting properties, an electron-blocking material, etc.

[0362] The light-receiving device may be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device may be formed by a method such as vapor deposition (including vacuum deposition), transfer, printing, inkjet printing, or coating.

[0363] For example, the hole transport material or electron blocking material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI). The electron transport material or hole blocking material may be an inorganic compound such as zinc oxide (ZnO), or an organic compound such as polyethyleneimine ethoxylate (PEIE). The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0364] Furthermore, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used in the active layer. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0365] The active layer may contain three or more materials. For example, in order to broaden the absorption wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0366] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, and therefore it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source, while other sub-pixels can detect light, and the remaining sub-pixels can display an image.

[0367] A display device according to one embodiment of the present invention has a display portion in which light-emitting devices are arranged in a matrix, and can display an image on the display portion. Furthermore, light-receiving devices are arranged in a matrix on the display portion, and the display portion has one or both of an imaging function and a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can use a light-emitting device as a light source for the sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced. For example, a fingerprint authentication device or a capacitive touch panel for scrolling or the like is not required separately from the electronic device. Therefore, by using the display device according to one embodiment of the present invention, an electronic device with reduced manufacturing costs can be provided.

[0368] In a display device of one embodiment of the present invention, when light emitted from a light-emitting device included in a display portion is reflected (or scattered) by an object, the light-receiving device can detect the reflected light (or scattered light). Therefore, imaging or touch detection is possible even in a dark place.

[0369] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0370] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0371] Furthermore, when the light-receiving device is used as a touch sensor, the display device can detect the proximity or contact of an object using the light-receiving device.

[0372] 12A and 12B includes subpixels G, B, R, and PS. The arrangement order of the subpixels is not limited to the illustrated configuration and can be determined as appropriate. For example, the positions of subpixels G and R may be interchanged.

[0373] The pixels shown in Fig. 12A are arranged in a stripe pattern, while the pixels shown in Fig. 12B are arranged in a matrix pattern.

[0374] Subpixel R has a light-emitting device that emits red light, subpixel G has a light-emitting device that emits green light, and subpixel B has a light-emitting device that emits blue light.

[0375] The subpixels PS each have a light-receiving device. The wavelength of light detected by the subpixels PS is not particularly limited. The subpixels PS may be configured to detect either or both of visible light and infrared light.

[0376] 12C and 12D includes subpixels G, B, R, PS, and X. The arrangement order of the subpixels is not limited to the illustrated configuration and can be determined as appropriate. For example, the positions of subpixels G and R may be interchanged.

[0377] 12C shows an example in which one pixel is arranged across two rows and three columns. Three subpixels (subpixel G, subpixel B, and subpixel R) are provided in the top row (first row). In FIG. 12C, two subpixels (subpixel PS and subpixel X) are provided in the bottom row (second row).

[0378] Fig. 12D shows an example in which one pixel is configured with three rows and two columns. In Fig. 12D, subpixel G is located in the first row, subpixel R is located in the second row, and subpixel B is located across these two rows. In addition, two subpixels (subpixel X and subpixel PS) are located in the third row. In other words, the pixel shown in Fig. 12D has three subpixels (subpixel G, subpixel R, and subpixel X) in the left column (first column) and two subpixels (subpixel B and subpixel PS) in the right column (second column).

[0379] The layout of the R, G, and B sub-pixels shown in Fig. 12C is a stripe arrangement. The layout of the R, G, and B sub-pixels shown in Fig. 12D is a so-called S-stripe arrangement. This makes it possible to achieve high display quality.

[0380] The layout of the pixel having the sub-pixel PS is not limited to the configurations shown in FIGS. 12A to 12D.

[0381] The subpixel X may be configured to include, for example, a light-emitting device that emits infrared light (IR). In this case, it is preferable that the subpixel PS detects the infrared light. For example, while displaying an image using the subpixels R, G, and B, the subpixel X may be used as a light source, and the reflected light emitted by the subpixel X may be detected by the subpixel PS.

[0382] Furthermore, for example, a configuration including a light receiving device can be applied as the subpixel X. In this case, the wavelength ranges of light detected by the subpixel PS and the subpixel X may be the same, different, or partially common. For example, one of the subpixels PS and X may mainly detect visible light, and the other may mainly detect infrared light.

[0383] The light-receiving area of ​​the subpixel PS is smaller than the light-receiving area of ​​the subpixel X. The smaller the light-receiving area, the narrower the imaging range, which makes it possible to suppress blurring in the imaging result and improve the resolution. Therefore, by using the subpixel PS, it is possible to perform imaging with higher definition or resolution than when using the light-receiving device of the subpixel X. For example, the subpixel PS can be used to perform imaging for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.

[0384] The light receiving device included in the subpixel PS preferably detects visible light, and preferably detects one or more of light of blue, purple, blue-purple, green, yellow-green, yellow, orange, red, etc. The light receiving device included in the subpixel PS may also detect infrared light.

[0385] Furthermore, when a configuration having a light receiving device is applied to the subpixel X, the subpixel X can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). The wavelength of light to be detected by the subpixel X can be appropriately determined depending on the application. For example, it is preferable that the sub-subpixel X detects infrared light. This enables touch detection even in dark places.

[0386] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0387] A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not touch the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is between 0.1 mm and 300 mm, preferably between 3 mm and 50 mm, is preferred. This configuration allows the display device to be operated without the object directly touching it, in other words, it allows the display device to be operated in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or allows the object to operate the display device without directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0388] Furthermore, the display device of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, adjusted within a range of 1 Hz to 240 Hz) depending on the content displayed on the display device to reduce power consumption. Furthermore, the drive frequency of the touch sensor or the near-touch sensor may be changed depending on the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or the near-touch sensor can be configured to be higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or the near-touch sensor.

[0389] The display device 100 shown in FIGS. 12E to 12G includes a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device between a substrate 351 and a substrate 359.

[0390] The functional layer 355 includes a circuit for driving the light-receiving device and a circuit for driving the light-emitting device. The functional layer 355 may be provided with switches, transistors, capacitors, resistors, wiring, terminals, etc. Note that when the light-emitting device and the light-receiving device are driven by a passive matrix method, a configuration without switches and transistors may be used.

[0391] 12E , when a finger 352 touches the display device 100, the light emitted by the light-emitting device in the layer 357 having the light-emitting device is reflected by the finger 352, and the reflected light is detected by the light-receiving device in the layer 353 having the light-receiving device. This makes it possible to detect that the finger 352 has touched the display device 100.

[0392] 12F and 12G, the display device may have a function of detecting or capturing an image of an object that is close to (i.e., not in contact with) the display device. Fig. 12F shows an example of detecting a person's finger, and Fig. 12G shows an example of detecting information about the periphery, surface, or interior of a person's eye (such as the number of blinks, eyeball movement, eyelid movement, etc.).

[0393] In the display device of this embodiment, the light receiving device can be used to capture images of the area around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of the user of the wearable device. Therefore, the wearable device can have a function to detect one or more of the user's blinking, movement of the pupil, and movement of the eyelid.

[0394] As described above, the display device of one embodiment of the present invention can employ various layouts for pixels each having a subpixel including a light-emitting device. Furthermore, the display device of one embodiment of the present invention can employ a pixel having both a light-emitting device and a light-receiving device. Even in this case, various layouts can be employed. The display device of one embodiment of the present invention can have one or both of an imaging function and a sensing function in addition to an image display function. Thus, the display device of one embodiment of the present invention can be said to have a configuration that is highly compatible with functions other than the display function.

[0395] This embodiment mode can be combined with other embodiment modes as appropriate.

[0396] Embodiment 3 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0397] The display device of the present embodiment can be a high-definition display device, and can therefore be used as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, as well as for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses.

[0398] The display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0399] 13A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100F described below.

[0400] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0401] 13B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0402] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 13B. The pixel 284a has a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light.

[0403] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0404] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a may be configured to have three circuits that control the driving of elements. For example, the pixel circuit 283a may be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor per light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0405] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0406] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0407] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20,000 ppi or less, or 30,000 ppi or less.

[0408] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0409] [Display Device 100A] A display device 100A shown in FIG. 14A includes a substrate 301, light-emitting devices 130R, 130G, and 130B, a capacitor 240, and a transistor 310.

[0410] 13A and 13B. The stacked structure from the substrate 301 to the insulating layer 255b corresponds to the layer 101 including the transistor in Embodiment 1.

[0411] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0412] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0413] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0414] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0415] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0416] An insulating layer 255a is provided to cover the capacitor 240, and an insulating layer 255b is provided on the insulating layer 255a.

[0417] The insulating layer 255a and the insulating layer 255b can be formed using various inorganic insulating films such as an insulating oxide film, an insulating nitride film, an oxynitride insulating film, and an insulating nitride oxide film. The insulating layer 255a is preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layer 255a is preferably formed using a silicon oxide film, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film. Alternatively, the insulating layer 255a may be formed using a nitride insulating film or a nitride oxide insulating film, and the insulating layer 255b may be formed using an oxide insulating film or an oxynitride insulating film. Although this embodiment shows an example in which a recess is provided in the insulating layer 255b, the insulating layer 255b does not necessarily have a recess.

[0418] Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are provided on insulating layer 255b. Fig. 14A shows an example in which light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B have a stacked structure similar to that shown in Fig. 1B. An insulator is provided in the region between adjacent light-emitting devices. In Fig. 14A and other examples, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in this region.

[0419] The pixel electrodes 111a, 111b, and 111c of the light-emitting device are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layers 255a and 255b, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255b and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0420] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting devices to the substrate 120, refer to Embodiment 1. The substrate 120 corresponds to the substrate 292 in FIG. 13A .

[0421] The upper end portions of the pixel electrodes 111a, 111b, and 111c are not covered with an insulating layer, which allows the distance between adjacent light-emitting devices to be extremely narrow, thereby enabling a high-definition or high-resolution display device.

[0422] Although FIG. 1B and other figures show an example in which the light-emitting devices 130R, 130G, and 130B have the first layer 113a, the second layer 113b, and the third layer 113c, respectively, which have different configurations, the EL layers of the light-emitting devices 130R, 130G, and 130B may have the same configuration.

[0423] 14B and 14C show examples in which light-emitting devices 130R, 130G, and 130B have the same configuration. Each of the light-emitting devices 130R, 130G, and 130B shown in Figures 14B and 14C has a first layer 113a and a fourth layer 114 between a pixel electrode and a common electrode 115. For example, the light-emitting devices 130R, 130G, and 130B can be configured to emit white light.

[0424] 14B shows an example in which colored layers 132R, 132G, and 132B are provided on a protective layer 131. A substrate 120 is bonded to the colored layers 132R, 132G, and 132B with a resin layer 122.

[0425] FIG. 14C shows an example in which the substrate 120 provided with the colored layers 132 R, 132 G, and 132 B is attached to the protective layer 131 by the resin layer 122 .

[0426] 14B and 14C , the light-emitting device 130R and the colored layer 132R overlap, and the light emitted from the light-emitting device 130R is extracted as red light to the outside of the display device via the red colored layer 132R. Similarly, the light-emitting device 130G and the green colored layer 132G overlap, and the light emitted from the light-emitting device 130G is extracted as green light to the outside of the display device via the colored layer 132G. The light-emitting device 130B and the blue colored layer 132B overlap, and the light emitted from the light-emitting device 130B is extracted as blue light to the outside of the display device via the colored layer 132B.

[0427] 15 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

[0428] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0429] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 131 or the insulating layer 332.

[0430] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be an inorganic insulating film that can be used for the protective layer 131.

[0431] Furthermore, a conductive layer 342 is provided on the back surface (surface opposite to the substrate 120 side) of the substrate 301B, below the insulating layer 345. The conductive layer 342 is preferably provided so as to be embedded in the insulating layer 335. Furthermore, the lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0432] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. In addition, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0433] The substrate 301A and the substrate 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be favorably bonded to each other.

[0434] It is preferable to use the same conductive material for the conductive layers 341 and 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable to use copper for the conductive layers 341 and 342. This allows the use of Cu-Cu (copper-copper) direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0435] Display Device 100C The display device 100C shown in FIG. 16 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0436] 16 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0437] [Display Device 100D] A display device 100D shown in FIG. 17 differs from the display device 100A mainly in the configuration of the transistors.

[0438] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0439] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0440] 13A and 13B . The stacked structure from the substrate 331 to the insulating layer 255b corresponds to the layer 101 including the transistor in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0441] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0442] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0443] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0444] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like into the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0445] Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264. Inside the openings, an insulating layer 323 and a conductive layer 324 are buried, which are in contact with side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and an upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0446] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0447] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0448] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0449] [Display Device 100E] A display device 100E illustrated in FIG. 18 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0450] The transistor 320A, the transistor 320B, and the surrounding configurations thereof can be referred to the display device 100D.

[0451] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0452] [Display Device 100F] A display device 100F shown in FIG. 19 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide.

[0453] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0454] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0455] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0456] [Display Device 100G] FIG. 20 shows a perspective view of the display device 100G, and FIG. 21A shows a cross-sectional view of the display device 100G.

[0457] The display device 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 20, the substrate 152 is indicated by a dashed line.

[0458] The display device 100G includes a display portion 162, a connection portion 140, a circuit 164, wiring 165, and the like. Fig. 20 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Fig. 20 can also be considered a display module including the display device 100G, an IC (integrated circuit), and an FPC.

[0459] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one side or multiple sides of the display portion 162. There may be one or multiple connection portions 140. FIG. 20 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0460] The circuit 164 can be, for example, a scanning line driver circuit.

[0461] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or input to the wiring 165 from the IC 173.

[0462] 20 shows an example in which an IC 173 is provided on a substrate 151 by a chip-on-glass (COG) method or a chip-on-film (COF) method. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100G and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0463] Figure 21A shows an example of a cross section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection portion 140, and a portion of the area including the end portion are cut away.

[0464] The display device 100G shown in Figure 21A has, between a substrate 151 and a substrate 152, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc.

[0465] The light-emitting devices 130R, 130G, and 130B each have the same structure as the laminated structure shown in Fig. 1B, except that the configuration of the pixel electrodes is different. For details of the light-emitting devices, refer to Embodiment 1.

[0466] The light-emitting device 130R includes a conductive layer 112a, a conductive layer 126a on the conductive layer 112a, and a conductive layer 129a on the conductive layer 126a. All or some of the conductive layers 112a, 126a, and 129a may be called pixel electrodes.

[0467] Light-emitting device 130G includes conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.

[0468] Light-emitting device 130B includes conductive layer 112c, conductive layer 126c on conductive layer 112c, and conductive layer 129c on conductive layer 126c.

[0469] The conductive layer 112a is connected to a conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 126a is located outside an end of the conductive layer 112a. An end of the conductive layer 126a and an end of the conductive layer 129a are aligned or approximately aligned. For example, a conductive layer functioning as a reflective electrode can be used for the conductive layer 112a and the conductive layer 126a, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 129a.

[0470] The conductive layers 112b, 126b, and 129b in the light-emitting device 130G and the conductive layers 112c, 126c, and 129c in the light-emitting device 130B are similar to the conductive layers 112a, 126a, and 129a in the light-emitting device 130R, and therefore will not be described in detail.

[0471] The conductive layers 112a, 112b, and 112c are formed to cover the openings formed in the insulating layer 214. A layer 128 is filled in the recesses of the conductive layers 112a, 112b, and 112c.

[0472] The layer 128 has a function of planarizing the recesses of the conductive layers 112a, 112b, and 112c. Conductive layers 126a, 126b, and 126c electrically connected to the conductive layers 112a, 112b, and 112c are provided over the conductive layers 112a, 112b, and 112c and the layer 128. Therefore, regions overlapping with the recesses of the conductive layers 112a, 112b, and 112c can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0473] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material.

[0474] An insulating layer containing an organic material can be suitably used as the layer 128. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, or the like can be used as the layer 128. Alternatively, a photosensitive resin can be used as the layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0475] By using a photosensitive resin, the layer 128 can be formed only through exposure and development steps, and the influence of dry etching, wet etching, etc. on the surfaces of the conductive layers 112a, 112b, and 112c can be reduced. Furthermore, by forming the layer 128 using a negative photosensitive resin, the layer 128 can sometimes be formed using the same photomask (exposure mask) as that used to form the openings in the insulating layer 214.

[0476] The top and side surfaces of the conductive layer 126a and the conductive layer 129a are covered with the first layer 113a. Similarly, the top and side surfaces of the conductive layer 126b and the conductive layer 129b are covered with the second layer 113b. The top and side surfaces of the conductive layer 126c and the conductive layer 129c are covered with the third layer 113c. Therefore, the entire regions where the conductive layers 126a, 126b, and 126c are provided can be used as light-emitting regions for the light-emitting devices 130R, 130G, and 130B, thereby increasing the aperture ratio of the pixel.

[0477] The side surfaces of the first layer 113a, the second layer 113b, and the third layer 113c are covered with insulating layers 125 and 127, respectively. A sacrificial layer 118a is located between the first layer 113a and the insulating layer 125. A sacrificial layer 118b is located between the second layer 113b and the insulating layer 125, and a sacrificial layer 118c is located between the third layer 113c and the insulating layer 125. A fourth layer 114 is provided on the first layer 113a, the second layer 113b, the third layer 113c, and the insulating layers 125 and 127, and a common electrode 115 is provided on the fourth layer 114. The fourth layer 114 and the common electrode 115 are each a continuous film provided in common to a plurality of light-emitting devices.

[0478] Furthermore, a protective layer 131 is provided on each of the light-emitting devices 130R, 130G, and 130B. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting devices. In FIG. 21A , the space between the substrates 152 and 151 is filled with the adhesive layer 142, thereby applying a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), thereby applying a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting devices. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0479] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129c. Ends of the conductive layer 123 are covered with a sacrificial layer, an insulating layer 125, and an insulating layer 127. A fourth layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the fourth layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the fourth layer 114. The fourth layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact with each other and electrically connected.

[0480] The display device 100G is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.

[0481] The stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.

[0482] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0483] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0484] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0485] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0486] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The insulating layer 214 may also have a stacked structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This can prevent recesses from being formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like.

[0487] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0488] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0489] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0490] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than a single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0491] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0492] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0493] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0494] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0495] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0496] The off-state current of the OS transistor per 1 μm of channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1 yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0497] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0498] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a greater number of gray levels to be displayed in the pixel circuit.

[0499] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0500] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0501] The metal oxide used in the semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0502] In particular, as the metal oxide used for the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO). Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0503] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereof in the vicinity thereof, In:M:Zn=1:1:1.2 or a composition thereof in the vicinity thereof, In:M:Zn=1:3:2 or a composition thereof in the vicinity thereof, In:M:Zn=1:3:4 or a composition thereof in the vicinity thereof, In:M:Zn=2:1:3 or a composition thereof in the vicinity thereof, In:M:Zn=3:1:2 or a composition thereof, or In:M:Zn=4:2:3. or a composition in the vicinity thereof, In:M:Zn = 4:2:4.1 or a composition in the vicinity thereof, In:M:Zn = 5:1:3 or a composition in the vicinity thereof, In:M:Zn = 5:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:1:7 or a composition in the vicinity thereof, In:M:Zn = 5:1:8 or a composition in the vicinity thereof, In:M:Zn = 6:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0504] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0505] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types.

[0506] All the transistors included in the display portion 162 may be OS transistors, all the transistors included in the display portion 162 may be Si transistors, or some of the transistors included in the display portion 162 may be OS transistors and the rest may be Si transistors.

[0507] For example, by using both an LTPS transistor and an OS transistor in the display portion 162, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. A more preferable example is a structure in which an OS transistor is used as a transistor that functions as a switch for controlling conduction / non-conduction between wirings, and an LTPS transistor is used as a transistor for controlling current.

[0508] For example, one of the transistors included in the display portion 162 functions as a transistor for controlling a current flowing through a light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows a large current to flow through the light-emitting device in the pixel circuit.

[0509] On the other hand, another transistor included in the display portion 162 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). An OS transistor is preferably used as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less). Therefore, power consumption can be reduced by stopping the driver when displaying a still image.

[0510] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0511] A display device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with a metal maskless (MML) structure. This structure significantly reduces leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current or side leakage current). Furthermore, when an image is displayed on the display device, the viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. The extremely low leakage current that may flow through the transistor and lateral leakage current between the light-emitting devices can minimize light leakage (so-called white floating) that may occur during black display (also referred to as true black display).

[0512] In particular, among light-emitting devices with an MML structure, by applying the SBS structure described above, the layers provided between the light-emitting devices (for example, organic layers shared between the light-emitting devices, also called common layers) are configured to be separated, thereby eliminating side leakage or making it possible to greatly reduce side leakage.

[0513] 21B and 21C show other examples of the structure of the transistor.

[0514] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0515] 21B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0516] 21C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 21C . In FIG. 21C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0517] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112c, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126c, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129c. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0518] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting devices, on the connection section 140, and on the circuit 164. Various optical members can be disposed on the outside of the substrate 152.

[0519] By providing the protective layer 131 that covers the light emitting device, it is possible to prevent impurities such as water from entering the light emitting device, thereby improving the reliability of the light emitting device.

[0520] The materials that can be used for the substrate 120 can be used for the substrate 151 and the substrate 152 .

[0521] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0522] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0523] [Display Device 100H] The display device 100H shown in FIG. 22A is different from the display device 100G mainly in that it is a bottom-emission display device that combines a white-light-emitting device with a color filter.

[0524] Light emitted from the light-emitting device is emitted toward the substrate 151. A material that is highly transparent to visible light is preferably used for the substrate 151. On the other hand, the light-transmitting property of the material used for the substrate 152 does not matter.

[0525] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201 and between the substrate 151 and the transistor 205. Fig. 22A shows an example in which the light-shielding layer 117 is provided over the substrate 151, the insulating layer 153 is provided over the light-shielding layer 117, and the transistors 201, 205, and the like are provided over the insulating layer 153.

[0526] The light-emitting device 130R and the red colored layer 132R are overlapped, and light emitted from the light-emitting device 130R is extracted as red light to the outside of the display device 100H through the colored layer 132R. Similarly, the light-emitting device 130G and the green colored layer 132G are overlapped, and light emitted from the light-emitting device 130G is extracted as green light to the outside of the display device 100H through the colored layer 132G.

[0527] Light-emitting device 130R has a conductive layer 112a, a conductive layer 126a on conductive layer 112a, and a conductive layer 129a on conductive layer 126a.

[0528] Light-emitting device 130G includes conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.

[0529] The conductive layers 112a, 112b, 112c, 126a, 126b, 126c, 129a, 129b, and 129c are each made of a material that is highly transparent to visible light. The common electrode 115 is preferably made of a material that reflects visible light.

[0530] The light-emitting devices included in the subpixels emitting red, green, and blue light can all be configured to emit white light. That is, the first layer 113a and the second layer 113b can have the same structure. In Figure 22A, the first layer 113a and the second layer 113b are illustrated as three layers. Specifically, a stacked structure of a first light-emitting unit, a charge generation layer, and a second light-emitting unit can be applied. The display device 100H can be manufactured using Example 3 of Manufacturing a Display Device, which is described in Embodiment 1.

[0531] 21A and 22A show examples in which the upper surface of the layer 128 has a flat portion, but there are no particular limitations on the shape of the layer 128. Modified examples of the layer 128 are shown in FIGS.

[0532] As shown in FIGS. 22B and 22D, the upper surface of layer 128 can be configured to have a recessed shape in the center and its vicinity in cross section, that is, a shape having a concave curved surface.

[0533] As shown in FIG. 22C, the upper surface of layer 128 may be configured to have a shape in which the center and its vicinity bulge in cross section, that is, a shape having a convex curve.

[0534] The upper surface of layer 128 may have one or both of a convex curved surface and a concave curved surface. The number of convex curved surfaces and the number of concave curved surfaces that the upper surface of layer 128 has are not limited, and may be one or more.

[0535] Furthermore, the height of the upper surface of layer 128 and the height of the upper surface of conductive layer 112a may be the same or approximately the same, or may be different from each other. For example, the height of the upper surface of layer 128 may be lower or higher than the height of the upper surface of conductive layer 112a.

[0536] 22B can also be considered an example in which layer 128 is contained within a recess formed in conductive layer 112a. On the other hand, as shown in FIG. 22D, layer 128 may be present outside the recess formed in conductive layer 112a, that is, the width of the top surface of layer 128 may be wider than the recess.

[0537] [Display Device 100J] A display device 100J shown in FIG. 23 differs from the display device 100G mainly in that a light-emitting device with a tandem structure is used.

[0538] In Figure 23, the first layer 113a, the second layer 113b, and the third layer 113c are each illustrated as three layers, and specifically, a stacked structure of a first light-emitting unit, a charge generation layer, and a second light-emitting unit can be applied.

[0539] In the display device 100J, the first layer 113a may have a structure in which a second light-emitting unit having a red light-emitting layer is stacked on a first light-emitting unit having a red light-emitting layer. Similarly, the second layer 113b may have a structure in which a second light-emitting unit having a green light-emitting layer is stacked on a first light-emitting unit having a green light-emitting layer. Furthermore, the third layer 113c may have a structure in which a second light-emitting unit having a blue light-emitting layer is stacked on a first light-emitting unit having a blue light-emitting layer.

[0540] By using light-emitting devices with a tandem structure, the brightness of the display device can be increased, or the current required to obtain the same brightness can be reduced, thereby improving the reliability of the display device.

[0541] [Display Device 100K] The display device 100K shown in FIG. 24 differs from the display device 100G mainly in that the display device 100K includes a light receiving device 150.

[0542] The light receiving device 150 includes a conductive layer 112d, a conductive layer 126d on the conductive layer 112d, and a conductive layer 129d on the conductive layer 126d.

[0543] The conductive layer 112 d is connected to a conductive layer 222 b included in the transistor 205 through an opening provided in the insulating layer 214 .

[0544] The upper and side surfaces of the conductive layer 126d and the conductive layer 129d are covered with the fifth layer 113d. The fifth layer 113d includes at least an active layer.

[0545] The side surfaces of the fifth layer 113d are covered with insulating layers 125 and 127. A sacrificial layer 118d is located between the fifth layer 113d and the insulating layer 125. A fourth layer 114 is provided on the fifth layer 113d and the insulating layers 125 and 127, and a common electrode 115 is provided on the fourth layer 114. The fourth layer 114 is a continuous film provided in common to the light-receiving device and the light-emitting device.

[0546] 12A to 12D described in the second embodiment can be applied to the display device 100K. The light receiving device 150 can be provided in the subpixel PS or the subpixel X. For details of the display device having the light receiving device, refer to the first embodiment.

[0547] This embodiment mode can be combined with other embodiment modes as appropriate.

[0548] Embodiment 4 In this embodiment, a light-emitting device that can be used for a display device according to one embodiment of the present invention will be described.

[0549] As shown in FIG. 25A , the light-emitting device has an EL layer 786 between a pair of electrodes (a lower electrode 772 and an upper electrode 788). The EL layer 786 can be composed of multiple layers such as a layer 4420, a light-emitting layer 4411, and a layer 4430. The layer 4420 can have, for example, a layer containing a substance with high electron-injection properties (electron-injection layer) and a layer containing a substance with high electron-transport properties (electron-transport layer). The light-emitting layer 4411 contains, for example, a light-emitting compound. The layer 4430 can have, for example, a layer containing a substance with high hole-injection properties (hole-injection layer) and a layer containing a substance with high hole-transport properties (hole-transport layer).

[0550] A structure including the layer 4420, the light-emitting layer 4411, and the layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 25A is referred to as a single structure in this specification.

[0551] 25B shows a modified example of the EL layer 786 included in the light-emitting device shown in Fig. 25A. Specifically, the light-emitting device shown in Fig. 25B includes a layer 4431 on a lower electrode 772, a layer 4432 on the layer 4431, a light-emitting layer 4411 on the layer 4432, a layer 4421 on the light-emitting layer 4411, a layer 4422 on the layer 4421, and an upper electrode 788 on the layer 4422. For example, when the lower electrode 772 is an anode and the upper electrode 788 is a cathode, the layer 4431 functions as a hole injection layer, the layer 4432 functions as a hole transport layer, the layer 4421 functions as an electron transport layer, and the layer 4422 functions as an electron injection layer. Alternatively, when the lower electrode 772 is a cathode and the upper electrode 788 is an anode, the layer 4431 functions as an electron injection layer, the layer 4432 functions as an electron transport layer, the layer 4421 functions as a hole transport layer, and the layer 4422 functions as a hole injection layer. With such a layer structure, carriers can be efficiently injected into the light-emitting layer 4411, and the efficiency of carrier recombination in the light-emitting layer 4411 can be increased.

[0552] As shown in Figures 25C and 25D, a configuration in which multiple light-emitting layers (light-emitting layers 4411, 4412, and 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0553] 25E and 25F, a configuration in which a plurality of light-emitting units (EL layer 786a, EL layer 786b) are connected in series via a charge generation layer 4440 is referred to as a tandem structure in this specification. The tandem structure may also be referred to as a stack structure. The tandem structure makes it possible to provide a light-emitting device capable of emitting light with high brightness.

[0554] 25C and 25D , light-emitting materials that emit light of the same color, or even the same light-emitting material, may be used for the light-emitting layers 4411, 4412, and 4413. For example, a light-emitting material that emits blue light may be used for the light-emitting layers 4411, 4412, and 4413. A color conversion layer may be provided as the layer 785 shown in FIG.

[0555] Furthermore, light-emitting materials that emit light of different colors may be used for the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413. When the lights emitted by the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413 are complementary in color, white light can be obtained. A color filter (also referred to as a coloring layer) may be provided as the layer 785 shown in FIG. 25D. When white light passes through the color filter, light of a desired color can be obtained.

[0556] 25E and 25F , the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. Alternatively, the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 4411 and the light emitted by the light-emitting layer 4412 are complementary colors, white light is obtained. FIG. 25F shows an example in which a layer 785 is further provided. As the layer 785, one or both of a color conversion layer and a color filter (colored layer) can be used.

[0557] 25C, 25D, 25E, and 25F, the layer 4420 and the layer 4430 may have a laminated structure consisting of two or more layers, as shown in FIG. 25B.

[0558] A structure that produces different luminescent colors (for example, blue (B), green (G), and red (R)) for each light-emitting device is sometimes called an SBS (Side By Side) structure.

[0559] The light-emitting device can emit light of red, green, blue, cyan, magenta, yellow, white, or the like, depending on the material of the EL layer 786. Furthermore, the color purity can be further improved by providing the light-emitting device with a microcavity structure.

[0560] A light-emitting device that emits white light preferably has a configuration in which two or more types of light-emitting materials are included in the light-emitting layer. To obtain white light emission using two types of light-emitting materials, light-emitting materials may be selected such that the emission colors of the two types of light-emitting materials are in a complementary color relationship. For example, a light-emitting device that emits white light as a whole can be obtained by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary colors. Furthermore, when white light emission is obtained using three or more types of light-emitting materials, the emission colors of the three or more light-emitting materials may be combined to form a configuration in which the light-emitting device as a whole emits white light.

[0561] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Alternatively, it is preferable that the light-emitting layer contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials contains spectral components of two or more colors of R, G, and B.

[0562] This embodiment mode can be combined with other embodiment modes as appropriate.

[0563] Embodiment 5 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0564] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0565] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0566] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0567] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use, such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios, such as 1:1 (square), 4:3, 16:9, and 16:10.

[0568] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0569] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0570] 26A to 26D , examples of wearable devices that can be worn on the head will be described. These wearable devices have one or both of a function to display AR content and a function to display VR content. Note that these wearable devices may also have a function to display SR or MR content in addition to AR and VR. By having an electronic device have the function to display content such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0571] The electronic device 700A shown in FIG. 26A and the electronic device 700B shown in FIG. 26B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0572] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can provide an extremely high-definition display.

[0573] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0574] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0575] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0576] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0577] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation or a slide operation by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0578] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0579] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device (also called a light receiving element). The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0580] The electronic device 800A shown in Figure 26C and the electronic device 800B shown in Figure 26D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0581] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high definition can be provided. This allows a user to feel a high sense of immersion.

[0582] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0583] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0584] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0585] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. Note that, in Fig. 26C and other figures, the mounting unit 823 is shaped like the temples of glasses (also called joints or temples), but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0586] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0587] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0588] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0589] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0590] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 includes a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, an electronic device 700A shown in FIG. 26A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, an electronic device 800A shown in FIG. 26C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0591] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 26B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or wearing unit 723.

[0592] Similarly, electronic device 800B shown in Fig. 26D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0593] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0594] As described above, as electronic devices of one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0595] Furthermore, the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.

[0596] The electronic device 6500 shown in FIG. 27A is a portable information terminal that can be used as a smartphone.

[0597] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0598] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0599] FIG. 27B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0600] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0601] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0602] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0603] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0604] 27C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0605] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0606] 27C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0607] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0608] 27D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0609] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0610] 27E and 27F show an example of digital signage.

[0611] 27E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0612] 27F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0613] 27E and 27F, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0614] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0615] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0616] 27E and 27F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0617] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0618] The electronic device shown in Figures 28A to 28G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0619] 28A to 28G, the display device of one embodiment of the present invention can be applied to the display portion 9001.

[0620] The electronic devices shown in Figures 28A to 28G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0621] Details of the electronic device shown in Figures 28A to 28G will be described below.

[0622] FIG. 28A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 28A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0623] 28B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0624] 28C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0625] FIG. 28D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a wirelessly capable headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0626] 28E to 28G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 28E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 28G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 28F is a perspective view of a state in the process of changing from one of FIGS. 28E and 28G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0627] This embodiment mode can be combined with other embodiment modes as appropriate.

[0628] In this example, an aluminum oxide (AlOx) film that can be used for a display device of one embodiment of the present invention is formed and evaluated, and the results are described.

[0629] [Evaluation 1] First, the difference in film quality of the aluminum oxide film depending on the film formation temperature was evaluated.

[0630] The sample was fabricated by forming a silicon oxide film on a silicon substrate by thermal oxidation treatment, and then forming an aluminum oxide film to a thickness of 50 nm on the silicon oxide film by ALD.

[0631] To form the aluminum oxide film, TMA (trimethylaluminum) was used as a precursor and H was used as an oxidizing gas. ２ O gas was used.

[0632] The substrate temperature (hereinafter also simply referred to as film formation temperature) when the aluminum oxide film was formed was set to three different temperatures of 80°C, 100°C, and 120°C.

[0633] Table 1 shows the film formation rate, wet etching rate (aluminum mixed acid etching solution, 45° C.), and stress of the aluminum oxide film for each film formation temperature.

[0634]

[0635] As shown in Table 1, the GPC (Growth per cycle: the amount of film formed per cycle) was almost the same regardless of the film formation temperature. Furthermore, the stress did not vary significantly depending on the film formation temperature, and all were tensile stresses. On the other hand, it was confirmed that the wet etching rate tended to slow down as the film formation temperature increased.

[0636] Next, thermal desorption spectroscopy (TDS) was used to analyze water molecules (H ２ The temperature dependence of the intensity detected at a mass-to-charge ratio of 18 (M / z=18), which corresponds to 100, was evaluated. For the measurements, an EMD-WA1000S / W manufactured by Denshi Kagaku Co., Ltd. was used. The results of the TDS analysis are shown in the left graph of Figure 29. In the TDS analysis graph shown in Figure 29, the horizontal axis represents the substrate temperature (Sub. Temp.) (unit: °C), and the vertical axis represents the intensity (unit: 10 −１２ A) In addition, below the graph of the TDS analysis, a table showing the amount of water molecules released (amount of outgassing) at each film formation temperature is provided.

[0637] The results of the TDS analysis showed that the higher the film formation temperature, the higher the peak temperature at which water molecules were detected. It was also confirmed that the higher the film formation temperature, the less water molecules were released.

[0638] Secondary ion mass spectrometry (SIMS) was also used to measure the hydrogen concentration (H concentration) profile and carbon concentration (C concentration) profile in the depth direction of the sample. A quadrupole secondary ion mass spectrometer (D-SIMS) manufactured by ULVAC-PHI, Inc. was used for the measurements. The results of the SIMS analysis are shown in the center and right graphs of FIG. 29. In the SIMS analysis graph shown in FIG. 29, the horizontal axis represents the depth from the AlOx surface (unit: nm), and the vertical axis represents the element concentration (H concentration or C concentration) in the film (unit: atoms / cm ３ The background level of the SIMS analysis was 2.3 × 10 １８ atoms / cm ３ , carbon concentration is 3.2 × 10 １７ atoms / cm３ It was.

[0639] The results of the SIMS analysis showed that the higher the deposition temperature, the lower the hydrogen and carbon concentrations in the aluminum oxide film. This indicates that an aluminum oxide film with a low impurity concentration can be formed by increasing the substrate temperature during deposition.

[0640] [Evaluation 2] First, a sample having a laminated structure of a silicon oxynitride (SiON) film and an aluminum oxide (AlOx) film was prepared. ２ A hot water immersion test using SiO was carried out. ２ The state of diffusion of O into SiON was confirmed, and the barrier properties of AlOx against water were evaluated.

[0641] 30, the sample was fabricated by forming a silicon oxide (SiOx) film to a thickness of 100 nm on a silicon (Si) substrate by thermal oxidation treatment, forming a silicon oxynitride (SiON) film to a thickness of 100 nm on the silicon oxide film by PECVD, and forming an aluminum oxide (ALD-AlOx) film on the silicon oxynitride film by ALD.

[0642] To form the aluminum oxide film, TMA (trimethylaluminum) was used as a precursor and H was used as an oxidizing gas. ２ O gas was used.

[0643] The target film thickness of the aluminum oxide film was set to four values: (A) 5 nm, (B) 10 nm, (C) 15 nm, and (D) 20 nm. The substrate temperature (Tsub) during film formation was set to three values: (1) 80° C., (2) 100° C., and (3) 120° C. As a method of notating the samples in this example, for example, a sample with a target film thickness of (A) 5 nm and a substrate temperature during film formation of (1) 80° C. will be referred to as Sample A1.

[0644] Next, the conditions of the hot water immersion test will be described. As shown in FIG. 30, the test was carried out at 65°C and 20 vol% D ２ The sample was immersed in O for 1 hour.

[0645] Then, using SIMS, the deuterium (D, ２ H) concentration profile was measured using a quadrupole secondary ion mass spectrometer (D-SIMS) manufactured by ULVAC-PHI, Inc.

[0646] 31 to 33 show the deuterium concentration profile in the depth direction of each sample. In this example, measurements were taken from the AlOx side. The horizontal axis represents the depth from the AlOx surface (unit: nm). The vertical axis represents the deuterium concentration in the film (unit: atoms / cm ３ )

[0647] 31 shows the results for a sample in which the substrate temperature during AlOx film formation was 80° C., FIG. 32 shows the results for a sample in which the substrate temperature was 100° C., and FIG. 33 shows the results for a sample in which the substrate temperature was 120° C.

[0648] In Sample A1 shown in FIG. 31, the target film thickness of AlOx is 5 nm, in Sample B1, the film thickness is 10 nm, in Sample C1, the film thickness is 15 nm, and in Sample D1, the film thickness is 20 nm.

[0649] Similarly, Sample A2 shown in Fig. 32 has a target AlOx film thickness of 5 nm, Sample B2 has a target film thickness of 10 nm, Sample C2 has a target film thickness of 15 nm, and Sample D2 has a target film thickness of 20 nm. Also, Sample A3 shown in Fig. 33 has a target AlOx film thickness of 5 nm, Sample B3 has a target film thickness of 10 nm, Sample C3 has a target film thickness of 15 nm, and Sample D3 has a target film thickness of 20 nm.

[0650] FIG. 31 also shows the results of a comparative example (ref) in which no AlOx film is formed on the SiON film.

[0651] 31 to 33, the solid lines show the results of the samples that underwent the hot water immersion test, and the thin dashed lines show the results of the samples that did not undergo the hot water immersion test. In addition, in each of the graphs shown in Fig. 31 to 33, the thick dashed lines show the background level of the SIMS analysis.

[0652] As shown in FIG. 31, in the samples at a substrate temperature of 80° C., it can be seen that in Sample D1 having a target film thickness of 20 nm, the D concentration in the SiON film hardly increases even after the hot water immersion test.

[0653] As shown in FIG. 32, in the samples at a substrate temperature of 100° C., in Samples C2 and D2 having a target film thickness of 15 nm or more, the D concentration in the SiON film hardly increases even when the hot water immersion test is performed.

[0654] As shown in FIG. 33, in all of the samples A3, B3, C3, and D3 at a substrate temperature of 120° C., the D concentration in the SiON film hardly increases even after the hot water immersion test.

[0655] From the above, it was found that when the substrate temperature during film formation is 80°C, an AlOx film with high water barrier properties can be formed by setting the target film thickness to 20 nm or more. Also, when the substrate temperature during film formation is 100°C, it was found that an AlOx film with high water barrier properties can be formed by setting the target film thickness to 15 nm or more. It was also found that when the substrate temperature during film formation is 120°C, an AlOx film with high water barrier properties can be formed by setting the target film thickness to 5 nm or more.

[0656] By increasing the substrate temperature during film formation, it is possible to form an AlOx film that has high barrier properties against water even if it is thin, which makes it possible to reduce the thickness of the AlOx film and improve throughput.

[0657] The aluminum oxide film formed in this example can be used for, for example, the insulating layer 125 included in the display device of one embodiment of the present invention.

[0658] PS: subpixel, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100H: display device, 100J: display device, 100K: display device, 100: display device, 101: layer including transistor, 110a: subpixel, 110b: subpixel, 110c: subpixel, 110d: subpixel, 110: pixel, 111a: pixel electrode, 111b: pixel electrode, 111c: pixel electrode, 112a: conductive layer, 112b: conductive layer, 112c: conductive layer, 112d: conductive layer, 113A: first layer, 113a: first layer, 113B: second layer, 113b: second layer, 113C: third layer, 113c: third layer, 113d: fifth layer, 113: EL layer, 114: fourth layer, 115: common electrode, 117: light-shielding layer, 118a: sacrificial layer, 118A: first sacrificial layer, 118b: sacrificial layer, 118B: first sacrificial layer, 118c: sacrificial layer, 118C: first sacrificial layer, 118d: sacrificial layer, 119a: sacrificial layer, 119A: second sacrificial layer, 119b: sacrificial layer, 119B: second sacrificial layer, 119c: sacrificial layer, 119C: second sacrificial layer, 120: substrate, 122: resin layer, 12 3: conductive layer, 124a: pixel, 124b: pixel, 125A: insulating film, 125: insulating layer, 126a: conductive layer, 126b: conductive layer, 126c: conductive layer, 126d: conductive layer, 127: insulating layer, 128: layer, 129a: conductive layer, 129b: conductive layer, 129c: conductive layer, 129d: conductive layer, 130B: light-emitting device, 130G: light-emitting device, 130R: light-emitting device, 131: protective layer, 132B: colored layer, 132G: colored layer, 132R: colored layer, 139: region, 140: connection portion, 142: adhesive layer, 150: light-receiving device, 151: substrate, 152: substrate, 153: Insulating layer, 162: display portion, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 190a: resist mask, 190b: resist mask, 190c: resist mask, 190: resist mask, 201: transistor, 204: connection portion, 205: transistor, 209: transistor, 210: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 231i: channel formation region,231n: low resistance region, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display unit, 282: circuit unit, 283a: pixel circuit, 283: pixel circuit unit, 284a: pixel, 284: pixel unit, 28 5: terminal portion, 286: wiring portion, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: Insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 351: substrate, 352: finger, 353: layer, 355: functional layer, 357: layer, 359: substrate, 700A: electronic device, 700B: electronic device, 721: housing, 723: wearing part, 727: earphone part, 750: earphone, 751: display panel, 753: optical member, 756: display area, 757: frame, 758: nose pad, 772: lower electrode, 785: layer, 786a: EL layer , 786b: EL layer, 786: EL layer, 788: upper electrode, 800A: electronic device, 800B: electronic device, 820: display unit, 821: housing, 822: communication unit, 823: wearing unit, 824: control unit, 825: imaging unit, 827: earphone unit, 832: lens, 4411: light-emitting layer, 4412: light-emitting layer, 4413: light-emitting layer, 4420: layer, 4421: layer, 4422: layer, 4430: layer, 4431: layer, 4432: layer, 4440: charge generation layer, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker,6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display unit, 7100: television device, 7101: housing, 7103: stand, 7111: remote control device, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7 301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9103: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. a first light-emitting device, a second light-emitting device, an organic insulating layer, and an inorganic insulating layer; the first light emitting device has a first pixel electrode, a first light emitting layer on the first pixel electrode, and a common electrode on the first light emitting layer; the second light-emitting device has a second pixel electrode, a second light-emitting layer on the second pixel electrode, and the common electrode on the second light-emitting layer; the inorganic insulating layer covers each of side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer; the organic insulating layer overlaps with side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer via the inorganic insulating layer; The common electrode has an area located on the organic insulating layer.

2. In claim 1, the first light-emitting device has a common layer between the first light-emitting layer and the common electrode; the second light-emitting device has the common layer between the second light-emitting layer and the common electrode; The display device, wherein the common layer has at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

3. In claim 1 or 2, The first light emitting device and the second light emitting device emit light of different colors.

4. In any one of claims 1 to 3, a first colored layer and a second colored layer that transmit light of different colors; the first light-emitting device and the second light-emitting device emit white light; light emitted from the first light emitting device is extracted to the outside of the display device through the first colored layer; The display device, wherein light emitted from the second light-emitting device is extracted to the outside of the display device through the second colored layer.

5. A display device according to any one of claims 1 to 4, A display module having at least one of a connector and an integrated circuit.

6. A display module according to claim 5; An electronic device having at least one of a housing, a battery, a camera, a speaker, and a microphone.