Semiconductor device

Abstract

A semiconductor device according to the present invention comprises: a semiconductor element having a first electrode; a conduction member having a first junction part opposing the first electrode; a junction layer interposed between the first electrode and the first junction part; and a regulating body joined to the first electrode or the first junction part. The regulating body opposes the junction layer in a direction orthogonal to the thickness direction of the semiconductor element.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a semiconductor device (power module) in which multiple semiconductor elements are bonded to a conductor layer. The semiconductor device includes multiple connecting metal members bonded to the conductor layer and the multiple semiconductor elements. This allows a large current to flow through the multiple semiconductor elements.

[0003] However, in the semiconductor device disclosed in Patent Document 1, at least one of the multiple connecting metal members may be misaligned with respect to the electrodes of the semiconductor element to which they are bonded. If the degree of misalignment is relatively large, the connecting metal member may cover the gate electrode of the semiconductor element. In this case, when bonding a wire to the gate electrode, the connecting metal member makes it difficult to bond the wire. Therefore, a measure to prevent misalignment of the connecting metal members with respect to the electrodes of the semiconductor element, or a measure to tolerate such misalignment even if it occurs, is desired.

[0004] JP 2016-162773 A

[0005] In view of the above circumstances, one object of the present disclosure is to provide a semiconductor device that can suppress or tolerate misalignment of a conductive member with respect to an electrode of a semiconductor element.

[0006] A semiconductor device according to a first aspect of the present disclosure includes a semiconductor element having a first electrode, a conductive member having a first bonding portion facing the first electrode, a bonding layer interposed between the first electrode and the first bonding portion, and a regulating body bonded to either the first electrode or the first bonding portion, wherein the regulating body faces the bonding layer in a direction perpendicular to a thickness direction of the semiconductor element.

[0007] A semiconductor device provided by a second aspect of the present disclosure comprises a semiconductor element having a first electrode, a conductive member having a first joint portion opposite the first electrode, and a joint layer interposed between the first electrode and the first joint portion, wherein the first electrode has a first recess recessed in a direction perpendicular to the thickness direction of the semiconductor element, and the first joint portion has a second recess recessed in a direction perpendicular to the thickness direction, and when viewed in the thickness direction, the second recess overlaps the first recess.

[0008] According to the semiconductor device of the present disclosure, it is possible to suppress or allow misalignment of the conductive member with respect to the electrode of the semiconductor element.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0010] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view of the semiconductor device shown in FIG. 1. FIG. 3 is a plan view corresponding to FIG. 2, seen through a sealing resin. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 5 is a front view of the semiconductor device shown in FIG. 1. FIG. 6 is a right side view of the semiconductor device shown in FIG. 1. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a partially enlarged view of FIG. 7. FIG. 11 is a partially enlarged view of FIG. 9. FIG. 12 is a partially enlarged view of the first element and its periphery shown in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 12. FIG. 14 is a partially enlarged view of the second element and its periphery shown in FIG. 3. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 14. FIG. 16 is a partially enlarged plan view of a semiconductor device according to a second embodiment of the present disclosure, enlarging the first element and its periphery and showing the sealing resin through the view. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 16. FIG. 18 is a partially enlarged plan view of the semiconductor device shown in FIG. 16, enlarging the second element and its periphery and showing the sealing resin through the view. FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 18. FIG. 20 is a partially enlarged plan view of a modified example of the semiconductor device shown in FIG. 16, showing the sealing resin through the view. FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 20. FIG. 22 is a partially enlarged plan view of a semiconductor device according to a third embodiment of the present disclosure, showing the first element and its periphery through the sealing resin through the view. FIG. 23 is a partially enlarged plan view of the semiconductor device shown in FIG. 22, showing the second element and its periphery through the sealing resin through the view. FIG. 24 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure, showing the sealing resin through the view. Fig. 25 is a partially enlarged cross-sectional view taken along line XXV-XXV in Fig. 24. Fig. 26 is a partially enlarged cross-sectional view taken along line XXVI-XXVI in Fig. 24. Fig. 27 is a partially enlarged plan view of a semiconductor device according to a fifth embodiment of the present disclosure, enlarging the first element and its periphery and showing through the sealing resin. Fig. 28 is a cross-sectional view taken along line XXVIII-XXVIII in Fig. 27.FIG. 29 is a partially enlarged plan view of the semiconductor device shown in FIG. 27 , enlarging the second element and its periphery, and showing the sealing resin through the view. FIG. 30 is a cross-sectional view taken along line XXX-XXX in FIG. 29 . FIG. 31 is a partially enlarged plan view of a first modified example of the semiconductor device shown in FIG. 27 , showing the sealing resin through the view. FIG. 32 is a partially enlarged plan view of a second modified example of the semiconductor device shown in FIG. 27 , showing the sealing resin through the view. FIG. 33 is a partially enlarged plan view of a semiconductor device according to a sixth embodiment of the present disclosure, enlarging the first element and its periphery, and showing the sealing resin through the view. FIG. 34 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 33 . FIG. 35 is a cross-sectional view taken along line XXXV-XXXV in FIG. 33 . FIG. 36 is a partially enlarged plan view of a modified example of the semiconductor device shown in FIG. 33 , showing the sealing resin through the view. FIG. 37 is a partially enlarged plan view of a semiconductor device according to a seventh embodiment of the present disclosure, showing the first element and its periphery through the sealing resin through the view. Fig. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII in Fig. 37. Fig. 39 is a partially enlarged plan view of the semiconductor device according to the eighth embodiment of the present disclosure, enlarging the first element and its periphery and showing the sealing resin through the enlarged view. Fig. 40 is a cross-sectional view taken along line XL-XL in Fig. 39.

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0012] 1 to 15, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a support member 10, a plurality of terminal leads 13, a semiconductor element 21, a conductive member 30, a pair of gate wires 41, a pair of detection wires 42, and a sealing resin 50. For ease of understanding, Fig. 3 shows the sealing resin 50 through imaginary lines (two-dot chain lines). In Fig. 3, line VIII-VIII and line IX-IX are each shown with a dashed dot line.

[0013] In the description of the semiconductor device A10, for convenience, the thickness direction of the semiconductor element 21 will be referred to as the "thickness direction z." The direction perpendicular to the thickness direction z will be referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x will be referred to as the "second direction y."

[0014] The semiconductor device A10 converts a DC power supply voltage applied to a first input terminal 14 and a second input terminal 16 of the plurality of terminal leads 13 into AC power using a semiconductor element 21. The converted AC power is input to a power supply target such as a motor from an output terminal 15 of the plurality of terminal leads 13. The semiconductor device A10 is used in a power conversion circuit such as an inverter.

[0015] The support member 10 is composed of the same lead frame together with the multiple terminal leads 13. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the support member 10 and the multiple terminal leads 13 have compositions that include copper (i.e., these components contain copper). Furthermore, the support member 10 is conductive. In the semiconductor device A10, the support member 10 includes a first die pad 10A and a second die pad 10B that are spaced apart from each other in the first direction x, as shown in FIGS. 3 and 7 . The support member 10 has a main surface 101 and a back surface 102. The main surface 101 faces the thickness direction z. The main surface 101 is covered with a sealing resin 50. A semiconductor element 21 is mounted on the main surface 101. Therefore, the back surface 102 faces the side opposite the semiconductor element 21 in the thickness direction z. The back surface 102 is exposed from the sealing resin 50. The back surface 102 is plated with, for example, tin (Sn).

[0016] As shown in FIGS. 3 and 7 to 9 , the sealing resin 50 covers the semiconductor element 21, the conductive member 30, and a portion of the support member 10 (a portion of each of the first die pad 10A and the second die pad 10B). The sealing resin 50 also covers a portion of each of the multiple terminal leads 13. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, a black epoxy resin. As shown in FIG. 2 , the dimension L1 of the sealing resin 50 in the first direction x is longer than the dimension L2 of the sealing resin 50 in the second direction y. The sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, multiple recesses 56, and a groove 57.

[0017] 7 to 9, the top surface 51 faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z. As shown in Fig. 7 to 9, the bottom surface 52 faces the opposite side to the top surface 51 in the thickness direction z. As shown in Fig. 4, the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B are exposed from the bottom surface 52.

[0018] 2, 4, and 5, the pair of first side surfaces 53 are spaced apart from each other in the first direction x. The pair of first side surfaces 53 face the first direction x and extend in the second direction y. The pair of first side surfaces 53 are connected to the top surface 51 and the bottom surface 52.

[0019] 2, 4, and 6, the second side surface 54 and the third side surface 55 are spaced apart from each other in the second direction y. The second side surface 54 and the third side surface 55 face opposite each other in the second direction y and extend in the first direction x. The second side surface 54 and the third side surface 55 are connected to the top surface 51 and the bottom surface 52. As shown in FIG. 5, a plurality of terminal leads 13 are exposed from the third side surface 55.

[0020] 2, 4, and 5, the recesses 56 are recessed in the second direction y from the third side surface 55 and extend from the top surface 51 to the bottom surface 52 in the thickness direction z. In the first direction x, the recesses 56 are located respectively between the first input terminal 14 and the first detection terminal 181, between the first input terminal 14 and the second input terminal 16, between the output terminal 15 and the second input terminal 16, and between the output terminal 15 and the second detection terminal 182.

[0021] 4, 5, 7, and 9, the groove 57 is recessed from the bottom surface 52 in the thickness direction z and extends along the second direction y. Both sides of the groove 57 in the second direction y are connected to the second side surface 54 and the third side surface 55. The groove 57 is located between the first die pad 10A and the second die pad 10B. When viewed in the thickness direction z, the groove 57 separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B.

[0022] 10 , the second die pad 10B has a first seating surface 103 and a first upright surface 104. The first seating surface 103 faces the same side as the main surface 101 in the thickness direction z, and is located between the main surface 101 and the back surface 102 in the thickness direction z. The first upright surface 104 faces a direction perpendicular to the thickness direction z, and is connected to the first seating surface 103 and the main surface 101. The first seating surface 103 and the first upright surface 104 form a step in the second die pad 10B.

[0023] As shown in FIGS. 3 and 7 , the semiconductor element 21 is mounted on the support member 10. In the semiconductor device A10, the semiconductor element 21 includes a first element 21A and a second element 21B. The first element 21A is mounted on the main surface 101 of the first die pad 10A. The second element 21B is mounted on the main surface 101 of the second die pad 10B. The semiconductor element 21 is, for example, a metal-oxide-semiconductor field-effect transistor (MOSFET). Alternatively, the semiconductor element 21 may be a switching element such as an insulated gate bipolar transistor (IGBT) or a diode. In the description of the semiconductor device A10, the semiconductor element 21 is an n-channel MOSFET with a vertical structure. The semiconductor element 21 includes a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). As shown in FIGS. 13 and 15, the semiconductor element 21 has a first electrode 211 , a second electrode 212 and a gate electrode 213 .

[0024] 13 and 15 , the first electrode 211 is located on the opposite side of the second electrode 212 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 corresponds to the source electrode of the semiconductor element 21. The first electrode 211 includes a plurality of metal plating layers. The first electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the first electrode 211 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0025] 13 and 15 , the second electrode 212 faces the main surface 101 of the support member 10. A current corresponding to the power before being converted by the semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the drain electrode of the semiconductor element 21.

[0026] 13 and 15 , the gate electrode 213 is located on the same side as the first electrode 211 in the thickness direction z. A gate voltage for driving the semiconductor element 21 is applied to the gate electrode 213. As shown in FIGS. 12 and 14 , the area of ​​the gate electrode 213 is smaller than the area of ​​the first electrode 211 when viewed in the thickness direction z.

[0027] 12 and 14, the first electrode 211 has a first recess 211A recessed in the first direction x. When viewed in the thickness direction z, the gate electrode 213 overlaps the first recess 211A.

[0028] As shown in FIGS. 8 , 10 , and 11 , the die bonding layer 23 is interposed between the main surface 101 of the first die pad 10A and the main surface 101 of the second die pad 10B and the first electrodes 211 of the semiconductor elements 21 (first element 21A and second element 21B). The die bonding layer 23 is conductive. The die bonding layer 23 is, for example, solder. Alternatively, the die bonding layer 23 may be sintered metal. The die bonding layer 23 bonds the main surface 101 of the first die pad 10A and the second electrode 212 of the first element 21A. This allows the second electrode 212 of the first element 21A to be electrically connected to the first die pad 10A. The die bonding layer 23 also bonds the main surface 101 of the second die pad 10B and the second electrode 212 of the second element 21B. As a result, the second electrode 212 of the second element 21B is electrically connected to the second die pad 10B.

[0029] 3 , the multiple terminal leads 13 are located on one side of the support member 10 in the second direction y. The multiple terminal leads 13 are electrically connected to the semiconductor element 21. The multiple terminal leads 13 are arranged along the first direction x. The multiple terminal leads 13 include a first input terminal 14, an output terminal 15, a second input terminal 16, a first gate terminal 171, a second gate terminal 172, a first detection terminal 181, and a second detection terminal 182.

[0030] As shown in FIG. 3 , the first input terminal 14 includes a portion extending in the second direction y and is connected to the first die pad 10A. Therefore, the first input terminal 14 is electrically connected to the second electrode 212 of the first element 21A via the first die pad 10A. The first input terminal 14 is a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied. The first input terminal 14 has a covering portion 14A and an exposed portion 14B. As shown in FIG. 7 , the covering portion 14A is connected to the first die pad 10A and is covered with the sealing resin 50. When viewed in the first direction x, the covering portion 14A is bent. As shown in FIGS. 2 to 5 , the exposed portion 14B is connected to the covering portion 14A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 14B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

[0031] As shown in FIG. 3 , the output terminal 15 includes a portion extending in the second direction y and is connected to the second die pad 10B. Therefore, the output terminal 15 is electrically connected to the second electrode 212 of the second element 21B via the second die pad 10B. AC power converted by the semiconductor element 21 is output from the output terminal 15. The output terminal 15 has a covering portion 15A and an exposed portion 15B. The covering portion 15A is connected to the second die pad 10B and is covered with the sealing resin 50. When viewed in the first direction x, the covering portion 15A is bent in the same manner as the covering portion 14A of the first input terminal 14. As shown in FIGS. 2 to 5 , the exposed portion 15B is connected to the covering portion 15A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 15B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

[0032] As shown in FIG. 3 , the second input terminal 16 is located away from the first die pad 10A and the second die pad 10B in the second direction y and is located between the first input terminal 14 and the output terminal 15 in the first direction x. The second input terminal 16 extends along the second direction y. The second input terminal 16 is electrically connected to the first electrode 211 of the second element 21B. The second input terminal 16 is an N-terminal (negative electrode) to which a DC power supply voltage to be converted is applied. The second input terminal 16 has a covering portion 16A and an exposed portion 16B. As shown in FIG. 9 , the covering portion 16A is covered with a sealing resin 50. As shown in FIGS. 2 to 5 , the exposed portion 16B is connected to the covering portion 16A and exposed from a third side surface 55 of the sealing resin 50. The exposed portion 16B extends away from the first die pad 10A and the second die pad 10B in the second direction y. The surface of the exposed portion 16B is plated with, for example, tin.

[0033] As shown in Fig. 13 , the covering portion 16A of the second input terminal 16 has a second seating surface 16C and a second upright surface 16D. The second seating surface 16C faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z, and is located lower in Fig. 13 than the upper surface of the covering portion 16A (the surface facing upward in Fig. 13 ). The second upright surface 16D faces in a direction perpendicular to the thickness direction z and is connected to the second seating surface 16C and the upper surface of the covering portion 16A. The second seating surface 16C and the second upright surface 16D form a step in the covering portion 16A of the second input terminal 16.

[0034] As shown in FIG. 3 , the first gate terminal 171 is located away from the first die pad 10A in the second direction y and on one side in the first direction x. As shown in FIG. 3 , the second gate terminal 172 is located away from the second die pad 10B in the second direction y and on the other side in the first direction x. The first gate terminal 171 is electrically connected to the gate electrode 213 of the first element 21A. A gate voltage for driving the first element 21A is applied to the first gate terminal 171. The second gate terminal 172 is electrically connected to the gate electrode 213 of the second element 21B. A gate voltage for driving the second element 21B is applied to the second gate terminal 172.

[0035] As shown in Fig. 3, the first gate terminal 171 has a covered portion 171A and an exposed portion 171B. The covered portion 171A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 171B is connected to the covered portion 171A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 171B extends in the second direction y away from the first die pad 10A. The surface of the exposed portion 171B is plated with, for example, tin.

[0036] As shown in Fig. 3, the second gate terminal 172 has a covered portion 172A and an exposed portion 172B. The covered portion 172A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 172B is connected to the covered portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends in the second direction y away from the second die pad 10B. The surface of the exposed portion 172B is plated with, for example, tin.

[0037] As shown in FIG. 3 , the first detection terminal 181 is located away from the first die pad 10A in the second direction y and is located between the first input terminal 14 and the first gate terminal 171 in the first direction x. As shown in FIG. 3 , the second detection terminal 182 is located away from the second die pad 10B in the second direction y and is located between the output terminal 15 and the second gate terminal 172 in the first direction x. The first detection terminal 181 is electrically connected to the second electrode 212 of the first element 21A. A voltage corresponding to the current flowing through the second electrode 212 of the first element 21A is applied to the first detection terminal 181. The second detection terminal 182 is electrically connected to the second electrode 212 of the second element 21B. A voltage corresponding to the current flowing through the second electrode 212 of the second element 21B is applied to the second detection terminal 182.

[0038] As shown in Fig. 3, the first detection terminal 181 has a covered portion 181A and an exposed portion 181B. The covered portion 181A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 181B is connected to the covered portion 181A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 181B extends in the second direction y away from the first die pad 10A. The surface of the exposed portion 181B is plated with, for example, tin.

[0039] As shown in Fig. 3, the second detection terminal 182 has a covered portion 182A and an exposed portion 182B. The covered portion 182A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 182B is connected to the covered portion 182A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 182B extends in the second direction y away from the second die pad 10B. The surface of the exposed portion 182B is plated with, for example, tin.

[0040] 5, in the semiconductor device A10, the height H of the exposed portion 14B of the first input terminal 14, the exposed portion 15B of the output terminal 15, and the exposed portion 16B of the second input terminal 16 are all the same. Furthermore, the thicknesses of these are all the same. Therefore, when viewed in the first direction x, at least a portion (exposed portion 16B) of the second input terminal 16 overlaps with each of the first input terminal 14 and the output terminal 15 (see FIG. 6).

[0041] The conductive member 30, together with the support member 10 and the plurality of terminal leads 13, forms a conductive path in the semiconductor device A10. The conductive member 30 contains copper. The conductive member 30 is a metal clip. In the semiconductor device A10, the conductive member 30 includes a first conductive member 31 and a second conductive member 32, as shown in FIGS. 3 and 7 .

[0042] 3, the first conductive member 31 is bonded to the first electrode 211 of the first element 21A and the second die pad 10B. As a result, the first electrode 211 of the first element 21A is electrically connected to the second die pad 10B and the second electrode 212 of the second element 21B. The first conductive member 31 has a main body 311, a first bonding portion 312, and a second bonding portion 313. As shown in FIG. 7, the first die pad 10A is located on the opposite side of the first element 21A from the first bonding portion 312 in the thickness direction z.

[0043] The main body portion 311 forms a main portion of the first conductive member 31. As shown in Fig. 3, the main body portion 311 extends in the first direction x. As shown in Fig. 7, the main body portion 311 straddles the first die pad 10A and the second die pad 10B.

[0044] 12 and 13 , the first bonding portion 312 faces the first electrode 211 of the first element 21A. The first bonding portion 312 is connected to the main body 311. The first bonding portion 312 has a bonding surface 312A and an end surface 312B. The bonding surface 312A faces the first electrode 211 of the first element 21A. The end surface 312B faces the first direction x. The end surface 312B is located between the bonding surface 312A and the gate electrode 213 of the first element 21A in the first direction x. As shown in FIG. 12 , when viewed in the thickness direction z, a portion of the first electrode 211 of the first element 21A is located between the gate electrode 213 of the first element 21A and the first bonding portion 312.

[0045] 10 , the second bonding portion 313 is bonded to the first seating surface 103 of the second die pad 10B. The second bonding portion 313 extends in the second direction y. At least a portion of the second bonding portion 313 is contained in an area defined by the first seating surface 103 and the first upright surface 104 of the second die pad 10B. The second bonding portion 313 is connected to the main body portion 311. The second bonding portion 313 is located on the opposite side of the first bonding portion 312 with the main body portion 311 in between.

[0046] 12 and 13, the semiconductor device A10 further includes a first bonding layer 33. In FIG. 12, the first bonding layer 33 is indicated by a region with multiple dots. The first bonding layer 33 is interposed between the first electrode 211 of the first element 21A and the first bonding portion 312. The first bonding layer 33 bonds the first electrode 211 of the first element 21A to the first bonding portion 312. The first bonding layer 33 is conductive. The first bonding layer 33 is solder.

[0047] The thickness t of the first bonding portion 312 is 0.1 mm or more, and the maximum thickness T max The maximum thickness T max is greater than the thickness of the first element 21A.

[0048] 7 and 10 , the semiconductor device A10 further includes a second bonding layer 34. The second bonding layer 34 is interposed between the first seating surface 103 of the second die pad 10B and the second bonding portion 313. The second bonding layer 34 bonds the second die pad 10B and the second bonding portion 313. The second bonding layer 34 is conductive. The second bonding layer 34 is solder.

[0049] 3, the second conductive member 32 is joined to the first electrode 211 of the second element 21B and the covering portion 16A of the second input terminal 16. This allows the first electrode 211 of the second element 21B to be electrically connected to the second input terminal 16. The second conductive member 32 has a main body portion 321, a third bonding portion 322, and a fourth bonding portion 323. As shown in FIG. 7, the second die pad 10B is located on the opposite side of the second element 21B from the third bonding portion 322 in the thickness direction z.

[0050] The main body portion 321 forms a main portion of the second conductive member 32. As shown in Fig. 3 , the main body portion 311 is bent in a hook shape when viewed in the thickness direction z. When viewed in the thickness direction z, the main body portion 311 overlaps the main surface 101 of the second die pad 10B.

[0051] 14 and 15 , the third bonding portion 322 faces the first electrode 211 of the second element 21B. The third bonding portion 322 is connected to the main body 321. The third bonding portion 322 has a bonding surface 322A and an end surface 322B. The bonding surface 322A faces the first electrode 211 of the second element 21B. The end surface 322B faces the first direction x. The end surface 322B is located between the bonding surface 322A and the gate electrode 213 of the second element 21B in the first direction x. As shown in FIG. 14 , when viewed in the thickness direction z, a portion of the first electrode 211 of the second element 21B is located between the gate electrode 213 of the second element 21B and the third bonding portion 322.

[0052] 11 , the fourth joint portion 323 is joined to the second seating surface 16C of the second input terminal 16. The fourth joint portion 323 extends in the first direction x. At least a portion of the fourth joint portion 323 is contained in an area defined by the second seating surface 16C and the second upright surface 16D of the second input terminal 16. The fourth joint portion 323 is connected to the main body portion 321. The fourth joint portion 323 is located on the opposite side of the main body portion 321 from the third joint portion 322.

[0053] As shown in Figures 14 and 15, the semiconductor device A10 further includes a third bonding layer 35. In Figure 14, the third bonding layer 35 is indicated by a region with multiple dots. The third bonding layer 35 is interposed between the first electrode 211 of the second element 21B and the third bonding portion 322. The third bonding layer 35 bonds the first electrode 211 of the second element 21B to the third bonding portion 322. The third bonding layer 35 is conductive. The third bonding layer 35 is solder.

[0054] The thickness t of the third bonding portion 322 is 0.1 mm or more, and the maximum thickness T max The maximum thickness T max is greater than the thickness of the second element 21B.

[0055] 7 and 11 , the semiconductor device A10 further includes a fourth bonding layer 36. The fourth bonding layer 36 is interposed between the second seating surface 16C of the second input terminal 16 and the fourth bonding portion 323. The fourth bonding layer 36 bonds the covering portion 16A of the second input terminal 16 to the fourth bonding portion 323. The fourth bonding layer 36 is conductive. The fourth bonding layer 36 is solder.

[0056] As shown in FIGS. 12 to 15 , the semiconductor device A10 further includes a regulator 37. The regulator 37 includes a metal element. The metal element is aluminum (Al). In the semiconductor device A10, the regulator 37 is formed by bonding a metal lump to the first electrode 211 of the semiconductor element 21 during manufacturing of the semiconductor element 21. The metal lump is formed by a wire bonding method. The regulator 37 extends in the second direction y. In the semiconductor device A10, the regulator 37 includes a first regulator 37A bonded to the first electrode 211 of the first element 21A and a second regulator 37B bonded to the first electrode 211 of the second element 21B.

[0057] 13 , the first restricting body 37A faces the first bonding layer 33 in the first direction x. The first restricting body 37A is in contact with the first bonding layer 33 and the end surface 312B of the first bonding portion 312 of the first conductive member 31. As shown in FIG. 12 , the first restricting body 37A includes a first portion 371 and a second portion 372 that are spaced apart from each other in the second direction y. A part of the first bonding layer 33 is located between the first portion 371 and the second portion 372.

[0058] 15 , the second restricting body 37B faces the third bonding layer 35 in the first direction x. The second restricting body 37B is in contact with the third bonding layer 35 and an end surface 322B of the third bonding portion 322 of the second conductive member 32. As shown in FIG. 14 , the second restricting body 37B includes a first portion 371 and a second portion 372 that are spaced apart from each other in the second direction y. A part of the third bonding layer 35 is located between the first portion 371 and the second portion 372.

[0059] 3, the pair of gate wires 41 are individually bonded to the gate electrodes 213 of the first element 21A and the second element 21B, the covering portion 171A of the first gate terminal 171, and the covering portion 172A of the second gate terminal 172. As a result, the first gate terminal 171 is electrically connected to the gate electrode 213 of the first element 21A. The second gate terminal 172 is electrically connected to the gate electrode 213 of the second element 21B. The composition of the pair of gate wires 41 includes gold. Alternatively, the composition of the pair of gate wires 41 may include copper or aluminum.

[0060] 3 , the pair of detection wires 42 are individually joined to the second electrodes 212 of the first element 21A and the second element 21B, and to the covering portion 181A of the first detection terminal 181 and the covering portion 182A of the second detection terminal 182. As a result, the first detection terminal 181 is electrically connected to the second electrode 212 of the first element 21A. The second detection terminal 182 is electrically connected to the second electrode 212 of the second element 21B. The composition of the pair of detection wires 42 includes gold. Alternatively, the composition of the pair of detection wires 42 may include copper or aluminum.

[0061] Next, the effects of the semiconductor device A10 will be described.

[0062] The semiconductor device A10 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first bonding portion 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first bonding portion 312. The semiconductor device A10 further includes a regulating body 37 (first regulating body 37A) bonded to the first electrode 211. The regulating body 37 faces the first bonding layer 33 in a direction perpendicular to the thickness direction z. With this configuration, when the first bonding portion 312 is bonded to the first electrode 211 via the first bonding layer 33, the first bonding portion 312 comes into contact with the regulating body 37, thereby suppressing relative displacement of the first bonding portion 312 with respect to the first electrode 211. Therefore, according to the semiconductor device A10, it is possible to suppress misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21.

[0063] The semiconductor element 21 has a gate electrode 213 located on the same side as the first electrode 211 in the thickness direction z. As viewed in the thickness direction z, a part of the first electrode 211 is located between the gate electrode 213 and a first joint 312 of the conductive member 30. This configuration is obtained as a result of the restricting body 37 suppressing misalignment of the conductive member 30 with respect to the first electrode 211. When this configuration is obtained, it is possible to prevent the first joint 312 from covering the gate electrode 213.

[0064] The first bonding portion 312 of the conductive member 30 has an end surface 312B facing the first direction x. The end surface 312B is in contact with the regulating body 37. This configuration is obtained when, when the first bonding portion 312 is bonded to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, if the first bonding portion 312 attempts to shift in the first direction x toward the side where the gate electrode 213 of the semiconductor element 21 is located, the end surface 312B comes into contact with the regulating body 37. Therefore, the end surface 312B serves as a means for more reliably bringing the first bonding portion 312 into contact with the regulating body 37.

[0065] As viewed in the thickness direction z, the regulator 37 is located between the gate electrode 213 of the semiconductor element 21 and the first bonding portion 312 of the conductive member 30. As a result, when the first bonding portion 312 is bonded to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, the regulator 37 can block the molten first bonding layer 33 from flowing toward the gate electrode 213.

[0066] The restrictor 37 includes a first portion 371 and a second portion 372 that are spaced apart from each other in the second direction y. This reduces the volume of the restrictor 37 while suppressing misalignment of the conductive member 30 with respect to the first electrode 211 of the semiconductor element 21. Furthermore, the restrictor 37 includes a metal element. The metal element is aluminum. This allows the restrictor 37 to serve as a conduction path between the first electrode 211 of the semiconductor element 21 and the first bonding portion 312 of the conductive member 30. In addition, the liquid repellency of the molten first bonding layer 33 with respect to the restrictor 37 is improved. Therefore, the restrictor 37 can more effectively block the molten first bonding layer 33.

[0067] The sealing resin 50 has a plurality of recesses 56 recessed in the second direction y from the third side surface 55. This configuration ensures a longer creepage distance of the sealing resin 50 between any two of the plurality of terminal leads 13 (excluding the first gate terminal 171 and the first detection terminal 181, and the second gate terminal 172 and the second detection terminal 182). This improves the dielectric strength of the semiconductor device A10.

[0068] The sealing resin 50 has a groove 57 recessed from the bottom surface 52 and separating the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B when viewed in the thickness direction z. This configuration ensures a longer creepage distance of the sealing resin 50 between the first die pad 10A and the second die pad 10B. This allows for a further improvement in the dielectric strength of the semiconductor device A10. Furthermore, it is possible to distribute thermal strain in the sealing resin 50 in the first direction x. This allows for the concentration of thermal strain on the pair of first side surfaces 53 of the sealing resin 50 to be alleviated.

[0069] Any of the plurality of terminal leads 13 is connected to the support member 10. This makes it possible to suppress an increase in the size of the semiconductor device A10 while utilizing the support member 10 as a conductive member.

[0070] The back surface 102 of the support member 10 is exposed from the sealing resin 50. This can improve the heat dissipation performance of the semiconductor device A10.

[0071] The conductive member 30 contains copper, which reduces the electrical resistance of the conductive member 30 compared to a wire containing aluminum in its composition. This is advantageous for passing a larger current through the semiconductor element 21.

[0072] A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to FIGS. 16 to 19. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. Here, FIGS. 16 and 18 are seen through the sealing resin 50 for ease of understanding. The position in FIG. 16 is the same as the position in FIG. 12 of the semiconductor device A10. The position in FIG. 18 is the same as the position in FIG. 14 of the semiconductor device A10.

[0073] The semiconductor device A20 differs from the semiconductor device A10 in the configuration of the regulating body 37.

[0074] 16 and 17 , the first restricting body 37A is bonded to the bonding surface 312A of the first bonding portion 312 of the first conductive member 31. The first restricting body 37A is in contact with the first electrode 211 of the first element 21A. Therefore, similar to the first bonding layer 33, the first restricting body 37A is interposed between the first electrode 211 of the first element 21A and the bonding surface 312A. In the semiconductor device A20, the first restricting body 37A is formed by bonding a metal lump to the bonding surface 312A by a wire bonding method.

[0075] 18 and 19 , the second restricting body 37B is bonded to the bonding surface 322A of the third bonding portion 322 of the second conductive member 32. The second restricting body 37B is in contact with the first electrode 211 of the second element 21B. Therefore, similar to the third bonding layer 35, the second restricting body 37B is interposed between the first electrode 211 of the second element 21B and the bonding surface 322A. In the semiconductor device A20, the second restricting body 37B is formed by bonding a metal lump to the bonding surface 322A by a wire bonding method.

[0076] Next, a semiconductor device A21, which is a modification of the semiconductor device A20, will be described with reference to Figures 20 and 21. For ease of understanding, Figure 20 is viewed through the sealing resin 50. The position in Figure 20 is the same as that in Figure 16. The configuration of this modification can be applied not only to the relationship between the first electrode 211 of the first element 21A and the first conductive member 31 described below, but also to the relationship between the first electrode 211 of the second element 21B and the second conductive member 32 shown in Figures 18 and 19.

[0077] 20 and 21 , in the semiconductor device A21, the first conductive member 31 has a tip portion 314. The tip portion 314 is connected to the first bonding portion 312. The tip portion 314 is inclined at an inclination angle α with respect to the bonding surface 312A of the first bonding portion 312 in a direction away from the first electrode 211 of the first element 21A in the thickness direction z as the tip portion 314 becomes farther from the first bonding portion 312 in the first direction x. The inclination angle α is equal to or greater than 30° and equal to or less than 60°.

[0078] 20 and 21 , the first electrode 211 of the first element 21A has an extension portion 211B. When viewed in the thickness direction z, the extension portion 211B is located on the opposite side from the first joint portion 312, with the tip portion 314 sandwiched therebetween.

[0079] 21 , the first bonding layer 33 is located on both sides of the first restricting body 37A in the first direction x. The first bonding layer 33 is in contact with the extension portion 211B of the first electrode 211 of the first element 21A and the tip portion 314 of the first conductive member 31.

[0080] Next, the effects of the semiconductor device A20 will be described.

[0081] The semiconductor device A20 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first bonding portion 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first bonding portion 312. The semiconductor device A20 further includes a regulating body 37 (first regulating body 37A) bonded to the first bonding portion 312. The regulating body 37 faces the first bonding layer 33 in a direction perpendicular to the thickness direction z. With this configuration, when the first bonding portion 312 is bonded to the first electrode 211 via the first bonding layer 33, the regulating body 37 comes into contact with the molten first bonding layer 33 and receives a reaction force from the first bonding layer 33, thereby suppressing relative displacement of the first bonding portion 312 with respect to the first electrode 211. Therefore, the semiconductor device A20 can also suppress misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A20 also achieves the effects of the configuration.

[0082] The first bonding portion 312 of the conductive member 30 has a bonding surface 312A that faces the first electrode 211 of the semiconductor element 21. The restricting body 37 is in contact with the bonding surface 312A and is bonded to the first electrode 211. As a result, as shown in FIG. 17 , the first restricting body 37A is configured to be sandwiched between the first electrode 211 of the first element 21A and the bonding surface 312A. With this configuration, the maximum thickness T max can be made equal to (or approximately equal to) the thickness of the first restricting body 37A. max 19, the second restricting body 37B is also configured to be sandwiched between the first electrode 211 of the second element 21B and the bonding surface 322A of the third bonding portion 322 of the second conductive member 32. With this configuration, the maximum thickness T max can be made equal to (or approximately equal to) the thickness of the second restricting body 37B. max It also becomes easier to manage.

[0083] The conductive member 30 of the semiconductor device A21 has a tip portion 314 connected to the first bonding portion 312. The tip portion 314 is inclined relative to the bonding surface 312A of the first bonding portion 312 in a direction perpendicular to the thickness direction z, such that the tip portion 314 is inclined away from the first electrode 211 of the semiconductor element 21 in the thickness direction z as it moves away from the first bonding portion 312. Furthermore, as viewed in the thickness direction z, the first electrode 211 has an extension portion 211B located on the opposite side of the first bonding portion 312 with the tip portion 314 sandwiched therebetween. With this configuration, as shown in FIG. 21 , the first bonding layer 33 contacts the extension portion 211B and creeps up along the tip portion 314. As a result, a fillet with a relatively large volume is formed in the first bonding layer 33. This improves the bonding strength of the conductive member 30 to the first electrode 211 and enables a larger current to flow through the conductive member 30. The inclination angle α of the tip portion 314 with respect to the bonding surface 312A is preferably 30° to 60°. When the inclination angle α is set in this range, the formation of a fillet in the first bonding layer 33 is promoted, and the concentration of thermal stress at the interface between the extension portion 211B and the first bonding layer 33 is reduced.

[0084] The regulator 37 contains a metal element. The metal element is aluminum. As a result, the regulator 37 serves as a conductive path between the first electrode 211 of the semiconductor element 21 and the first bonding portion 312 of the conductive member 30. Furthermore, the liquid repellency of the molten first bonding layer 33 with respect to the regulator 37 is improved. As a result, when the regulator 37 comes into contact with the molten first bonding layer 33, the reaction force that the regulator 37 receives from the first bonding layer 33 becomes larger. Therefore, the regulator 37 is more effective in suppressing misalignment of the conductive member 30.

[0085] A semiconductor device A30 according to a third embodiment of the present disclosure will be described as shown in FIGS. 22 and 23 . In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, FIGS. 22 and 23 are viewed through the sealing resin 50. The position in FIG. 22 is the same as the position in FIG. 12 of the semiconductor device A10. The position in FIG. 23 is the same as the position in FIG. 14 of the semiconductor device A10.

[0086] The semiconductor device A30 differs from the semiconductor device A10 in that it does not include a regulating body 37 and in the configuration of the conductive member 30.

[0087] 22 , the first joint portion 312 of the first conductive member 31 has a second recess 312C. The second recess 312C is recessed in the first direction x. When viewed in the thickness direction z, the second recess 312C overlaps the first recess 211A of the first electrode 211 of the first element 21A. The second recess 312C is larger than the first recess 211A of the first electrode 211 of the first element 21A. Furthermore, when viewed in the thickness direction z, the gate electrode 213 of the first element 21A overlaps the first recess 211A of the first electrode 211 of the first element 21A and the second recess 312C.

[0088] 23 , the third joint portion 322 of the second conductive member 32 has a second recess 322C. The second recess 322C is recessed in the first direction x. When viewed in the thickness direction z, the second recess 322C overlaps the first recess 211A of the first electrode 211 of the second element 21B. The second recess 322C is larger than the first recess 211A of the first electrode 211 of the second element 21B. Furthermore, when viewed in the thickness direction z, the gate electrode 213 of the second element 21B overlaps the first recess 211A of the first electrode 211 of the second element 21B and the second recess 322C.

[0089] Next, the effects of the semiconductor device A30 will be described.

[0090] The semiconductor device A30 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first bonding portion 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first bonding portion 312. The first electrode 211 has a first recess 211A recessed in a direction perpendicular to the thickness direction z. The first bonding portion 312 has a second recess 312C recessed in a direction perpendicular to the thickness direction z. As viewed in the thickness direction z, the second recess 312C overlaps the first recess 211A. With this configuration, when the first bonding portion 312 is bonded to the first electrode 211 via the first bonding layer 33, even if the position of the first bonding portion 312 relative to the first electrode 211 is misaligned, the first bonding portion 312 can be prevented from covering the first recess 211A. Therefore, according to the semiconductor device A30, it is possible to allow misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A30 also achieves the effects of this configuration.

[0091] The semiconductor element 21 has a gate electrode 213 located on the same side as the first electrode 211 in the thickness direction z. As viewed in the thickness direction z, the gate electrode 213 overlaps the first recess 211A of the first electrode 211 of the semiconductor element 21 and the second recess 312C of the first bonding portion 312 of the conductive member 30. This makes it possible to prevent the first bonding portion 312 from covering the gate electrode 213 even if misalignment of the conductive member 30 with respect to the first electrode 211 is permitted.

[0092] A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to FIGS. 24 to 26. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, FIG. 24 shows the sealing resin 50 through which light is transmitted. In FIG. 24, the transmitted sealing resin 50 is shown by imaginary lines.

[0093] The semiconductor device A40 differs from the semiconductor device A10 in that it further includes a protective element 22 and in the configurations of the conductive member 30 and the regulating body 37.

[0094] As shown in FIG. 24 , the protection element 22 includes a first diode 22A and a second diode 22B. The first diode 22A is mounted on the main surface 101 of the first die pad 10A. The second diode 22B is mounted on the main surface 101 of the second die pad 10B. The protection element 22 is, for example, a Schottky barrier diode. The first diode 22A is connected in parallel to the first element 21A. The second diode 22B is connected in parallel to the second element 21B. The protection element 22 is a so-called free wheel diode that, when a reverse bias is applied to the semiconductor element 21, causes current to flow through the protection element 22 rather than the semiconductor element 21. As shown in FIGS. 21 and 22 , the protection element 22 has an upper electrode 221 and a lower electrode 222.

[0095] 25 and 26, the upper electrode 221 is provided on the side facing the main surface 101 of the support member 10 in the thickness direction z. The upper electrode 221 corresponds to an anode electrode.

[0096] As shown in FIGS. 25 and 26 , the bottom electrode 222 is provided on the opposite side of the top electrode 221 in the thickness direction z. The bottom electrode 222 corresponds to a cathode electrode. As shown in FIG. 25 , the bottom electrode 222 of the first diode 22A is bonded to the main surface 101 of the first die pad 10A via the die bonding layer 23. As a result, the bottom electrode 222 of the first diode 22A is electrically connected to the second electrode 212 of the first element 21A via the first die pad 10A. As shown in FIG. 26 , the bottom electrode 222 of the second diode 22B is bonded to the main surface 101 of the second die pad 10B via the die bonding layer 23. As a result, the bottom electrode 222 of the second diode 22B is electrically connected to the second electrode 212 of the second element 21B via the second die pad 10B.

[0097] 24 , the first bonding portion 312 of the first conductive member 31 includes two regions spaced apart from each other in the second direction y. As shown in Fig. 25 , one of the two regions is bonded to the top electrode 221 of the first diode 22A via the first bonding layer 33. This establishes electrical conduction between the top electrode 221 of the first diode 22A and the first electrode 211 of the first element 21A via the first conductive member 31.

[0098] 24 , the third bonding portion 322 of the second conductive member 32 includes two regions spaced apart from each other in the second direction y. As shown in Fig. 26 , one of the two regions is bonded to the top electrode 221 of the second diode 22B via the third bonding layer 35. This establishes electrical conduction between the top electrode 221 of the first diode 22A and the first electrode 211 of the second element 21B via the second conductive member 32.

[0099] 25 , in the semiconductor device A40, the restricting body 37 further includes a third restricting body 37C bonded to the upper electrode 221 of the first diode 22A. The third restricting body 37C faces the first bonding layer 33 in the first direction x. The third restricting body 37C contacts the first bonding layer 33 and the end surface 312B of the first bonding portion 312 of the first conductive member 31.

[0100] 26 , in the semiconductor device A40, the restricting body 37 further includes a fourth restricting body 37D bonded to the upper electrode 221 of the second diode 22B. The fourth restricting body 37D faces the third bonding layer 35 in the first direction x. The fourth restricting body 37D contacts the third bonding layer 35 and an end surface 322B of the third bonding portion 322 of the second conductive member 32.

[0101] Next, the effects of the semiconductor device A40 will be described.

[0102] The semiconductor device A40 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first bonding portion 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first bonding portion 312. The semiconductor device A40 further includes a regulating body 37 (first regulating body 37A) bonded to the first electrode 211. The regulating body 37 faces the first bonding layer 33 in a direction perpendicular to the thickness direction z. This configuration achieves the same effects as the semiconductor device A10. Therefore, the semiconductor device A40 also makes it possible to suppress misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, since the semiconductor device A40 has a configuration similar to that of the semiconductor device A10, the semiconductor device A40 also achieves the effects associated with this configuration.

[0103] The semiconductor device A40 further includes a protection element 22. This allows the semiconductor element 21 to be appropriately protected from reverse bias even when a large current flows through the semiconductor device A40.

[0104] The restricting body 37 of the semiconductor device A40 includes a third restricting body 37C joined to the upper electrode 221 of the first diode 22A and a fourth restricting body 37D joined to the upper electrode 221 of the second diode 22B. This allows the first joint portion 312 to come into contact with at least one of the first restricting body 37A and the third restricting body 37C of the restricting body 37 when the first joint portion 312 of the first conductive member 31 is joined to the first electrode 211 of the first element 21A and the upper electrode 221 of the first diode 22A via the first joint layer 33. This effectively suppresses rotational displacement of the first conductive member 31 about the thickness direction z. Similarly, when the third bonding portion 322 of the second conductive member 32 is bonded to the first electrode 211 of the second element 21B and the upper electrode 221 of the second diode 22B via the third bonding layer 35, the third bonding portion 322 may come into contact with at least one of the second regulating body 37B and the fourth regulating body 37D of the regulating body 37. Therefore, rotational displacement of the second conductive member 32 about the thickness direction z can be effectively suppressed.

[0105] A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described as shown in FIGS. 27 to 29. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. Here, FIGS. 27 and 29 are seen through the sealing resin 50 for ease of understanding. The position in FIG. 27 is the same as the position in FIG. 12 of the semiconductor device A10. The position in FIG. 29 is the same as the position in FIG. 14 of the semiconductor device A10.

[0106] The semiconductor device A50 differs from the semiconductor device A10 in the configuration of the conductive member 30.

[0107] 27 and 28 , the first conductive member 31 has a protrusion 38 and a recessed portion 39. The protrusion 38 and the recessed portion 39 are provided in the first joint portion 312 of the first conductive member 31. The protrusion 38 and the recessed portion 39 can be formed by applying a press process to the first joint portion 312.

[0108] As shown in Fig. 28 , the protrusion 38 protrudes in the thickness direction z from the bonding surface 312A of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The protrusion 38 is in contact with the first electrode 211 of the first element 21A and the first bonding layer 33. The dimension d of the protrusion 38 in the thickness direction z is smaller than the dimension h of the first restricting body 37A in the thickness direction z. As shown in Fig. 27 , the protrusion 38 has a circular shape when viewed in the thickness direction z. Alternatively, the protrusion 38 may have a polygonal shape, such as a rectangular shape, when viewed in the thickness direction z.

[0109] As shown in Figure 28, the recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The upper surface 312D faces the opposite side of the bonding surface 312A of the first bonding portion 312 in the thickness direction z and is connected to the end surface 312B of the first bonding portion 312. As shown in Figure 27, the shape of the recessed portion 39 is similar to the shape of the protrusion 38 when viewed in the thickness direction z. When viewed in the thickness direction z, the recessed portion 39 overlaps the protrusion 38. In this case, the dimension d of the protrusion 38 in the thickness direction z is less than or equal to the thickness t of the first bonding portion 312.

[0110] 29 and 30 , the second conductive member 32 has a protrusion 38 and a recessed portion 39. The protrusion 38 and the recessed portion 39 are provided in the third joint portion 322 of the second conductive member 32. The protrusion 38 and the recessed portion 39 can be formed by applying a press process to the third joint portion 322.

[0111] As shown in Fig. 30 , the protrusion 38 protrudes in the thickness direction z from the bonding surface 312A of the third bonding portion 322 toward the first electrode 211 of the second element 21B. The protrusion 38 is in contact with the first electrode 211 of the second element 21B and the third bonding layer 35. The dimension d of the protrusion 38 in the thickness direction z is smaller than the dimension h of the second restricting body 37B in the thickness direction z. As shown in Fig. 29 , the protrusion 38 has a circular shape when viewed in the thickness direction z. Alternatively, the protrusion 38 may have a polygonal shape, such as a rectangular shape, when viewed in the thickness direction z.

[0112] As shown in Figure 30, the recessed portion 39 is recessed in the thickness direction z from the upper surface 322D of the third bonding portion 322 toward the first electrode 211 of the second element 21B. The upper surface 322D faces the opposite side of the bonding surface 322A of the third bonding portion 322 in the thickness direction z and is connected to the end surface 322B of the third bonding portion 322. As shown in Figure 29, the shape of the recessed portion 39 is similar to the shape of the protrusion 38 when viewed in the thickness direction z. When viewed in the thickness direction z, the recessed portion 39 overlaps the protrusion 38. In this case, the dimension d of the protrusion 38 in the thickness direction z is less than or equal to the thickness t of the third bonding portion 322.

[0113] Next, a semiconductor device A51, which is a first modified example of the semiconductor device A50, will be described with reference to Fig. 31. Here, Fig. 31 is shown through the sealing resin 50 for ease of understanding. The position in Fig. 31 is the same as the position in Fig. 27. The configuration of this modified example can be applied not only to the first conductive member 31 described below, but also to the second conductive member 32 shown in Figs. 29 and 30.

[0114] 31 , in the semiconductor device A51, the convex portion 38 of the first conductive member 31 includes a first convex portion 381 and a second convex portion 382 that are spaced apart from each other in the first direction x. When viewed in the thickness direction z, the first convex portion 381 and the second convex portion 382 have the same shape and size.

[0115] Next, a semiconductor device A52, which is a second modified example of the semiconductor device A50, will be described with reference to Fig. 32. Here, Fig. 32 is viewed through the sealing resin 50 for ease of understanding. The position in Fig. 32 is the same as the position in Fig. 27. The configuration of this modified example can be applied not only to the first conductive member 31 described below, but also to the second conductive member 32 shown in Figs. 29 and 30.

[0116] 32 , in the semiconductor device A52, the convex portion 38 of the first conductive member 31 includes a first convex portion 381 and a second convex portion 382 that are spaced apart from each other in the second direction y. The first convex portion 381 and the second convex portion 382 extend in the first direction x. That is, the first convex portion 381 and the second convex portion 382 extend in a direction perpendicular to the thickness direction z and the direction in which the first convex portion 381 and the second convex portion 382 are spaced apart from each other. For each of the first convex portion 381 and the second convex portion 382, ​​the dimension a in the first direction x is greater than the dimension b in the second direction y. When viewed in the thickness direction z, the first convex portion 381 and the second convex portion 382 have the same shape and size.

[0117] Next, the effects of the semiconductor device A50 will be described.

[0118] The semiconductor device A50 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first bonding portion 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first bonding portion 312. The semiconductor device A50 further includes a regulating body 37 (first regulating body 37A) bonded to the first electrode 211. The regulating body 37 faces the first bonding layer 33 in a direction perpendicular to the thickness direction z. This configuration achieves the same effects as the semiconductor device A10. Therefore, the semiconductor device A50 also makes it possible to suppress misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, since the semiconductor device A50 has a configuration similar to that of the semiconductor device A10, the semiconductor device A50 also achieves the effects associated with this configuration.

[0119] The conductive member 30 of the semiconductor device A50 has a protrusion 38 provided on the first bonding portion 312. The protrusion 38 protrudes in the thickness direction z toward the first electrode 211 of the semiconductor element 21. The protrusion 38 is in contact with the first electrode 211. With this configuration, the protrusion 38 functions as a spacer when the first bonding portion 312 is bonded to the first electrode 211 via the first bonding layer 33. As a result, the maximum thickness T max is equal to (or approximately equal to) the dimension d of the protrusion 38 in the thickness direction z, the maximum thickness T max The maximum thickness T max By controlling the temperature and power cycles, it is possible to improve the durability of the semiconductor device A50 against temperature cycles and power cycles. Furthermore, it is possible to suppress the generation of voids in the first bonding layer 33.

[0120] Furthermore, the dimension d in the thickness direction z of the protrusion 38 shown in FIG. 28 is smaller than the dimension h in the thickness direction z of the regulating body 37. With this configuration, when the first bonding portion 312 is bonded to the first electrode 211 via the first bonding layer 33, if the first bonding portion 312 tends to shift in the first direction x toward the side where the gate electrode 213 of the semiconductor element 21 is located, the end surface 312B of the first bonding portion 312 can reliably contact the regulating body 37. To achieve this effect, the dimension d in the thickness direction z of the protrusion 38 is preferably in the range of 75 μm to 175 μm. A more preferable range for the dimension d is 100 μm to 150 μm.

[0121] In the semiconductor device A51, the protrusion 38 includes a first protrusion 381 and a second protrusion 382 that are spaced apart from each other in the first direction x. With this configuration, when the first bonding portion 312 of the conductive member 30 is bonded to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, rotational displacement of the first bonding portion 312 about the second direction y can be suppressed.

[0122] In the semiconductor device A52, the first protrusion 381 and the second protrusion 382 of the protrusion 38 extend in a direction perpendicular to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 are separated from each other. With this configuration, when the first bonding portion 312 of the conductive member 30 is bonded to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, rotational displacement of the first bonding portion 312 about each of the first direction x and the second direction y can be suppressed.

[0123] A semiconductor device A60 according to a sixth embodiment of the present disclosure will be described below, as shown in FIGS. 33 to 35 . In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and redundant description will be omitted. For ease of understanding, FIG. 33 is viewed through the sealing resin 50. The position in FIG. 33 is the same as the position in FIG. 27 for the semiconductor device A50. The configuration of this embodiment can be applied not only to the relationship between the first electrode 211 of the first element 21A and the first conductive member 31 described below, but also to the relationship between the first electrode 211 of the second element 21B and the second conductive member 32 shown in FIGS. 29 and 30 .

[0124] The semiconductor device A60 differs from the semiconductor device A50 in the configuration of the semiconductor element 21 and the conductive member 30.

[0125] 33 and 35 , the first electrode 211 of the first element 21A includes two regions spaced apart from each other in the first direction x. Accordingly, the first conductive member 31 has two first joints 312 spaced apart from each other in the first direction x. One side of each of the two first joints 312 in the second direction y is connected to the main body 311 of the first conductive member 31.

[0126] 33 to 35, the first conductive member 31 has a protrusion 38 and a recess 39. The protrusion 38 and the recess 39 are provided at two first joint portions 312 of the first conductive member 31.

[0127] As shown in FIGS. 34 and 35 , the protrusions 38 protrude in the thickness direction z from the bonding surfaces 312A of the two first bonding portions 312 toward the first electrodes 211 of the first elements 21A. The protrusions 38 are in contact with the first electrodes 211 of the first elements 21A and the first bonding layer 33. The protrusions 38 include a first protrusion 381 and a second protrusion 382 that are spaced apart from each other in the first direction x. The first protrusion 381 is provided on one of the two first bonding portions 312. The second protrusion 382 is provided on the other of the two first bonding portions 312. As shown in FIG. 33 , the first protrusions 381 and the second protrusions 382 have the same shape and size as each other when viewed in the thickness direction z. The dimension d in the thickness direction z of each of the first protrusion 381 and the second protrusion 382 is smaller than the dimension h in the thickness direction z of the first restriction body 37A. The dimension d in the thickness direction z of each of the first protrusion 381 and the second protrusion 382 is preferably in the range of 75 μm to 175 μm. A more preferable range for the dimension d is 100 μm to 150 μm. The rest of the configuration of the protrusion 38 is similar to the configuration of the protrusion 38 of the first conductive member 31 of the semiconductor device A50.

[0128] The recessed portion 39 is recessed in the thickness direction z from the upper surfaces 312D of the two first bonding portions 312 toward the first electrode 211 of the first element 21A. The upper surfaces 312D face the opposite side of the bonding surfaces 312A of the two first bonding portions 312 in the thickness direction z, and are connected to the end surfaces 312B of either of the two first bonding portions 312. The rest of the configuration of the recessed portion 39 is similar to the configuration of the recessed portion 39 of the first conductive member 31 of the semiconductor device A50.

[0129] Next, a semiconductor device A61, which is a modification of the semiconductor device A60, will be described with reference to Fig. 36. Here, Fig. 36 is shown through the sealing resin 50 for ease of understanding. The position in Fig. 36 is the same as the position in Fig. 33. The configuration of this modification can be applied not only to the first conductive member 31 described below, but also to the second conductive member 32 shown in Figs. 29 and 30.

[0130] 36 , in the semiconductor device A61, the first protrusion 381 and the second protrusion 382 included in the protrusion 38 of the first conductive member 31 extend in the first direction x. That is, the first protrusion 381 and the second protrusion 382 extend in a direction perpendicular to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 are separated from each other. In each of the first protrusion 381 and the second protrusion 382, ​​the dimension a in the first direction x is smaller than the dimension b in the second direction y.

[0131] Next, the effects of the semiconductor device A60 will be described.

[0132] The semiconductor device A60 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first bonding portion 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first bonding portion 312. The semiconductor device A50 further includes a regulating body 37 (first regulating body 37A) bonded to the first electrode 211. The regulating body 37 faces the first bonding layer 33 in a direction perpendicular to the thickness direction z. This configuration achieves the same effects as the semiconductor device A10. Therefore, the semiconductor device A60 also makes it possible to suppress misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, since the semiconductor device A60 has a configuration similar to that of the semiconductor device A10, the semiconductor device A60 also achieves the effects associated with this configuration.

[0133] The conductive member 30 of the semiconductor device A60 has protrusions 38 provided on the two first bonding portions 312. The protrusions 38 protrude in the thickness direction z toward the first electrodes 211 of the semiconductor element 21. The protrusions 38 are in contact with the first electrodes 211. Therefore, the semiconductor device A60 also has a maximum thickness T max Since the above-mentioned control is possible, it is possible to improve the durability of the semiconductor device A60 against temperature cycles and power cycles. Furthermore, it is possible to suppress the occurrence of voids in the first bonding layer 33.

[0134] The protrusion 38 includes a first protrusion 381 and a second protrusion 382 that are spaced apart from each other in the first direction x. With this configuration, when the two first bonding portions 312 of the conductive member 30 are bonded to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, rotational displacement of the two first bonding portions 312 about the second direction y can be suppressed.

[0135] In the semiconductor device A61, the first protrusion 381 and the second protrusion 382 of the protrusion 38 extend in a direction perpendicular to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 move away from each other. With this configuration, when the two first bonding portions 312 of the conductive member 30 are bonded to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, rotational displacement of the two first bonding portions 312 around each of the first direction x and the second direction y can be suppressed.

[0136] A semiconductor device A70 according to a seventh embodiment of the present disclosure will be described below, as shown in FIGS. 37 and 38 . In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and redundant description will be omitted. For ease of understanding, FIG. 37 is viewed through the sealing resin 50. The position in FIG. 37 is the same as the position in FIG. 16 for the semiconductor device A20. The configuration of this embodiment can be applied not only to the relationship between the first conductive member 31 and the first restricting body 37A described below, but also to the relationship between the second conductive member 32 and the second restricting body 37B shown in FIGS. 18 and 19 .

[0137] The semiconductor device A70 differs from the semiconductor device A20 in the configurations of the conductive member 30 and the regulating body 37.

[0138] 37 and 38 , the first conductive member 31 has a protrusion 38 and a recessed portion 39. The protrusion 38 and the recessed portion 39 are provided in the first joint portion 312 of the first conductive member 31. The protrusion 38 and the recessed portion 39 can be formed by applying a press process to the first joint portion 312.

[0139] As shown in FIG. 38 , the protrusion 38 protrudes in the thickness direction z from the bonding surface 312A of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The protrusion 38 is in contact with the first electrode 211 of the first element 21A and the first bonding layer 33. The dimension d of the protrusion 38 in the thickness direction z is larger than the dimension h of the first restricting body 37A in the thickness direction z. As shown in FIG. 37 , the protrusion 38 has a circular shape when viewed in the thickness direction z. Alternatively, the protrusion 38 may have a polygonal shape, such as a rectangular shape, when viewed in the thickness direction z.

[0140] As shown in Figure 38, the recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The upper surface 312D faces the opposite side of the bonding surface 312A of the first bonding portion 312 in the thickness direction z and is connected to the end surface 312B of the first bonding portion 312. As shown in Figure 37, the shape of the recessed portion 39 is similar to the shape of the protrusion 38 when viewed in the thickness direction z. When viewed in the thickness direction z, the recessed portion 39 overlaps the protrusion 38. In this case, the dimension d of the protrusion 38 in the thickness direction z is less than or equal to the thickness t of the first bonding portion 312.

[0141] In the semiconductor device A70, when manufacturing the semiconductor element 21, the regulating body 37 is formed by bonding a metal lump to the first electrode 211 of the semiconductor element 21. The metal lump is formed by a wire bonding method.

[0142] Next, the effects of the semiconductor device A70 will be described.

[0143] The semiconductor device A70 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first bonding portion 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first bonding portion 312. The semiconductor device A70 further includes a regulating body 37 (first regulating body 37A) bonded to the first bonding portion 312. The regulating body 37 faces the first bonding layer 33 in a direction perpendicular to the thickness direction z. With this configuration, when the first bonding portion 312 is bonded to the first electrode 211 via the first bonding layer 33, the molten first bonding layer 33 comes into contact with the regulating body 37. This suppresses the wetting and spreading of the first bonding layer 33, and a reaction force acts on the first bonding portion 312 in the direction opposite to the direction in which the wetting and spreading of the first bonding layer 33 is suppressed, thereby suppressing relative displacement of the first bonding portion 312 with respect to the first electrode 211. Therefore, the semiconductor device A70 can suppress misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, since the semiconductor device A70 has a configuration similar to that of the semiconductor device A10, the semiconductor device A70 also achieves the effects of this configuration.

[0144] The conductive member 30 of the semiconductor device A70 has a protruding portion 38 provided in the first bonding portion 312. The protruding portion 38 protrudes in the thickness direction z toward the first electrode 211 of the semiconductor element 21. The protruding portion 38 is in contact with the first electrode 211. Therefore, the semiconductor device A70 also has a maximum thickness T max Since the above-mentioned control is possible, it is possible to improve the durability of the semiconductor device A70 against temperature cycles and power cycles. Furthermore, it is possible to suppress the occurrence of voids in the first bonding layer 33.

[0145] 38 is larger than the dimension h of the regulating body 37 in the thickness direction z. With this configuration, when the first bonding portion 312 is bonded to the first electrode 211 via the first bonding layer 33, the convex portion 38 can reliably contact the first electrode 211 without interfering with the regulating body 37. In addition, when the molten first bonding layer 33 contacts the regulating body 37, the first bonding layer 33 receives a reaction force from the regulating body 37. The reaction force acts on the convex portion 38. This makes it possible to more effectively suppress the relative displacement of the first bonding portion 312 with respect to the first electrode 211.

[0146] A semiconductor device A80 according to an eighth embodiment of the present disclosure will be described below, as shown in FIGS. 39 and 40 . In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, FIG. 39 is viewed through the sealing resin 50. The position in FIG. 39 is the same as the position in FIG. 22 for the semiconductor device A30. The configuration of this embodiment can be applied not only to the first conductive member 31 described below, but also to the second conductive member 32 shown in FIG. 23 .

[0147] The semiconductor device A80 differs from the semiconductor device A30 in the configuration of the conductive member 30.

[0148] 39 and 40 , the first conductive member 31 has a protrusion 38 and a recessed portion 39. The protrusion 38 and the recessed portion 39 are provided in a first joint portion 312 of the first conductive member 31. The protrusion 38 and the recessed portion 39 can be formed by applying a press process to the first joint portion 312.

[0149] As shown in Fig. 40 , the protrusion 38 protrudes in the thickness direction z from the bonding surface 312A of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The protrusion 38 is in contact with the first electrode 211 of the first element 21A and the first bonding layer 33. As shown in Fig. 39 , the protrusion 38 has a circular shape when viewed in the thickness direction z. Alternatively, the protrusion 38 may have a polygonal shape, such as a rectangular shape, when viewed in the thickness direction z.

[0150] As shown in Figure 40, the recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the first bonding portion 312 toward the first electrode 211 of the first element 21A. The upper surface 312D faces the opposite side of the bonding surface 312A of the first bonding portion 312 in the thickness direction z and is connected to the end surface 312B of the first bonding portion 312. As shown in Figure 39, the shape of the recessed portion 39 is similar to the shape of the protrusion 38 when viewed in the thickness direction z. When viewed in the thickness direction z, the recessed portion 39 overlaps the protrusion 38. In this case, the dimension d of the protrusion 38 in the thickness direction z is less than or equal to the thickness t of the first bonding portion 312.

[0151] Next, the effects of the semiconductor device A80 will be described.

[0152] The semiconductor device A80 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conductive member 30 (first conductive member 31) having a first bonding portion 312 facing the semiconductor element 21, and a bonding layer (first bonding layer 33) interposed between the first electrode 211 and the first bonding portion 312. The first electrode 211 has a first recess 211A recessed in a direction perpendicular to the thickness direction z. The first bonding portion 312 has a second recess 312C recessed in a direction perpendicular to the thickness direction z. As viewed in the thickness direction z, the second recess 312C overlaps the first recess 211A. Therefore, the semiconductor device A80 also allows for misalignment of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21. Furthermore, since the semiconductor device A80 has a configuration similar to that of the semiconductor device A10, the semiconductor device A80 also achieves the effects of this configuration.

[0153] The conductive member 30 of the semiconductor device A80 has a protruding portion 38 provided on the first bonding portion 312. The protruding portion 38 protrudes in the thickness direction z toward the first electrode 211 of the semiconductor element 21. The protruding portion 38 is in contact with the first electrode 211. Therefore, the semiconductor device A80 also has a maximum thickness T max Since the above-mentioned control is possible, it is possible to improve the durability of the semiconductor device A80 against temperature cycles and power cycles. Furthermore, it is possible to suppress the occurrence of voids in the first bonding layer 33.

[0154] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0155] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a semiconductor element having a first electrode; a conductive member having a first bonding portion facing the first electrode; a bonding layer interposed between the first electrode and the first bonding portion; and a regulator bonded to either the first electrode or the first bonding portion, wherein the regulator faces the bonding layer in a direction perpendicular to a thickness direction of the semiconductor element. Appendix 2. The semiconductor device according to Appendix 1, wherein the regulator includes a metal element. Appendix 3. The semiconductor device according to Appendix 2, wherein the metal element is aluminum. Appendix 4. The semiconductor device according to Appendix 2 or 3, wherein the regulator is bonded to the first electrode, and the first bonding portion has an end face facing a first direction perpendicular to the thickness direction, the end face being in contact with the regulator. Appendix 5. The semiconductor device according to Appendix 4, wherein the regulator includes a first portion and a second portion spaced apart from each other in the thickness direction and a second direction perpendicular to the first direction. Appendix 6. The semiconductor device according to Appendix 5, wherein a portion of the bonding layer is located between the first portion and the second portion. Appendix 7. The semiconductor device according to Appendix 2 or 3, wherein the first bonding portion has a bonding surface facing the first electrode, the regulator is bonded to the bonding surface, and the regulator is in contact with the first electrode. Appendix 8. The semiconductor device according to Appendix 7, wherein the conductive member has a tip portion connected to the first bonding portion, the tip portion is inclined with respect to the bonding surface in a direction away from the first electrode in the thickness direction as the tip portion becomes farther from the first bonding portion in a direction perpendicular to the thickness direction, and the first electrode has an extension portion located on the opposite side to the first bonding portion with the tip portion sandwiched therebetween as viewed in the thickness direction. Appendix 9. The semiconductor device according to any of Appendixes 1 to 8, wherein the regulator is in contact with the bonding layer. Appendix 10. 10. The semiconductor device according to claim 1, wherein the semiconductor element has a gate electrode located on the same side as the first electrode in the thickness direction, and a portion of the first electrode is located between the gate electrode and the first junction as viewed in the thickness direction.Appendix 11. A semiconductor device comprising: a semiconductor element having a first electrode; a conductive member having a first bonding portion facing the first electrode; and a bonding layer interposed between the first electrode and the first bonding portion, wherein the first electrode has a first recess recessed in a direction perpendicular to a thickness direction of the semiconductor element, and the first bonding portion has a second recess recessed in a direction perpendicular to the thickness direction, and the second recess overlaps the first recess as viewed in the thickness direction. Appendix 12. The semiconductor device according to Appendix 11, wherein the semiconductor element has a gate electrode located on the same side as the first electrode in the thickness direction, and the gate electrode overlaps the first recess and the second recess as viewed in the thickness direction. Appendix 13. The semiconductor device according to any of Appendixes 1 to 12, further comprising a support member located on the opposite side of the semiconductor element from the first bonding portion in the thickness direction, and the semiconductor element is mounted on the support member. Appendix 14. Appendix 13: The semiconductor device according to Appendix 13, further comprising a sealing resin that covers the semiconductor element, the conductive member, and a portion of the support member. Appendix 15: The semiconductor device according to Appendix 14, further comprising a plurality of terminal leads that are electrically connected to the semiconductor element, wherein a portion of each of the plurality of terminal leads is covered with the sealing resin. Appendix 16: The semiconductor device according to Appendix 15, wherein the support member is conductive, the semiconductor element has a second electrode that faces the support member, the second electrode is joined to the support member, and one of the plurality of terminal leads is connected to the support member. Appendix 17: The semiconductor device according to either Appendix 15 or 16, wherein the conductive member has a main body portion to which the first joint portion is connected, and a second joint portion that is connected to the main body portion and positioned apart from the first joint portion, and the second joint portion is joined to one of the plurality of terminal leads. Appendix 18: 18. The semiconductor device according to claim 1, wherein the conductive member is provided at the first joint portion and has a protrusion that protrudes in the thickness direction toward the first electrode, and the protrusion is in contact with the first electrode.Supplementary Note 19. The semiconductor device according to Supplementary Note 18, wherein the conductive member has a recessed portion provided at the first joint and recessed in the thickness direction toward the first electrode, and wherein the recessed portion overlaps the protrusion as viewed in the thickness direction. Supplementary Note 20. The semiconductor device according to Supplementary Note 19, wherein a dimension of the protrusion in the thickness direction is equal to or less than a thickness of the first joint. Supplementary Note 21. The semiconductor device according to any of Supplementary Notes 18 to 20, wherein the protrusion includes a first protrusion and a second protrusion positioned apart from each other in a direction perpendicular to the thickness direction, and the first protrusion and the second protrusion extend in a direction perpendicular to the thickness direction and a direction in which the first protrusion and the second protrusion are separated from each other.

[0156] A10, A20, A30, A40, A50, A60, A70, A80: semiconductor device 10: support member 10A: first die pad 10B: second die pad 101: main surface 102: back surface 103: first seating surface 104: first upright surface 13: terminal lead 14: first input terminal 14A: covering portion 14B: exposed portion 15: output terminal 15A: covering portion 15B: exposed portion 16: second input terminal 16A: covering portion 16B: exposed portion 16C: second seating surface 16D: second upright surface 171: first gate terminal 171A: covering portion 171B: exposed portion 172: second gate terminal 172A: covering portion 172B: exposed portion 181: first detection terminal 181A: covering portion 181B: exposed portion 182: second detection terminal 182A: covering portion 182B: exposed portion 21: semiconductor element 21A: first element 21B: second element 211: first electrode 211A: first recess 211B: extension portion 212: second electrode 213: gate electrode 22: protection element 22A: first diode 22B: second diode 221: upper electrode 222: lower electrode 23: die bonding layer 31: first conductive member 311: main body 312: first bonding portion 312A: bonding surface 312B: end face 312C: second recess 312D: upper surface 313: second bonding portion 314: tip portion 32: second conductive member 321: main body 322: third bonding portion 322A: Bonding surface 322B: End surface 322C: Second recess 322D: Upper surface 323: Fourth bonding portion 33: First bonding layer 34: Second bonding layer 35: Third bonding layer 36: Fourth bonding layer 37: Regulating body 37A: First restricting body 37B: Second restricting body 37C: Third restricting body 37D: Fourth restricting body 371: First portion 372: Second portion 38: Convex portion 381: First convex portion 382: Second convex portion 39: Depression portion 41: Gate wire 42: Detection wire 50: Sealing resin 51: Top surface 52: Bottom surface 53: First side surface 54: Second side surface 55: Third side surface 56: Recess 57: Groove portion z: Thickness direction x: First direction y: Second direction

Claims

1. A semiconductor element having a first electrode; a conductive member having a first joint portion facing the first electrode; a bonding layer interposed between the first electrode and the first bonding portion; a regulating body joined to either the first electrode or the first joint portion, The semiconductor device, wherein the regulating body faces the bonding layer in a direction perpendicular to a thickness direction of the semiconductor element.

2. The semiconductor device according to claim 1 , wherein the regulator includes a metal element.

3. The semiconductor device according to claim 2 , wherein the metal element is aluminum.

4. the regulating body is joined to the first electrode, The first joint portion has an end surface facing a first direction perpendicular to the thickness direction, The semiconductor device according to claim 2 , wherein the end face is in contact with the regulator.

5. The semiconductor device according to claim 4 , wherein the regulating body includes a first portion and a second portion positioned apart from each other in the thickness direction and in a second direction perpendicular to the first direction.

6. The semiconductor device according to claim 5 , wherein a portion of the bonding layer is located between the first portion and the second portion.

7. the first bonding portion has a bonding surface facing the first electrode, the regulating body is bonded to the bonding surface, The semiconductor device according to claim 2 , wherein the regulator is in contact with the first electrode.

8. the conductive member has a tip portion connected to the first joint portion, the tip portion is inclined with respect to the bonding surface in a direction away from the first electrode in the thickness direction as the tip portion becomes farther from the first bonding portion in a direction perpendicular to the thickness direction, The semiconductor device according to claim 7 , wherein the first electrode has an extension portion located on an opposite side to the first joint portion with the tip portion therebetween, as viewed in the thickness direction.

9. The semiconductor device according to claim 1 , wherein the regulator is in contact with the bonding layer.

10. the semiconductor element has a gate electrode located on the same side as the first electrode in the thickness direction; The semiconductor device according to claim 1 , wherein a portion of the first electrode is located between the gate electrode and the first junction when viewed in the thickness direction.

11. A semiconductor element having a first electrode; a conductive member having a first joint portion facing the first electrode; a bonding layer interposed between the first electrode and the first bonding portion, the first electrode has a first recess that is recessed in a direction perpendicular to a thickness direction of the semiconductor element, The first joint portion has a second recess that is recessed in a direction perpendicular to the thickness direction, When viewed in the thickness direction, the second recess overlaps the first recess.

12. the semiconductor element has a gate electrode located on the same side as the first electrode in the thickness direction; The semiconductor device according to claim 11 , wherein the gate electrode overlaps the first recess and the second recess when viewed in the thickness direction.

13. a support member located on an opposite side of the semiconductor element from the first bonding portion in the thickness direction, 13. The semiconductor device according to claim 1, wherein the semiconductor element is mounted on the support member.

14. The semiconductor device according to claim 13 , further comprising a sealing resin that covers said semiconductor element, said conductive member, and a part of said support member.

15. Further comprising a plurality of terminal leads electrically connected to the semiconductor element; The semiconductor device according to claim 14 , wherein a portion of each of said plurality of terminal leads is covered with said sealing resin.

16. The support member is electrically conductive, the semiconductor element has a second electrode facing the support member, the second electrode is joined to the support member, The semiconductor device according to claim 15 , wherein any one of the plurality of terminal leads is connected to the support member.

17. the conductive member has a main body portion to which the first joint portion is connected, and a second joint portion connected to the main body portion and located away from the first joint portion, The semiconductor device according to claim 15 , wherein the second joint portion is joined to any one of the plurality of terminal leads.

18. the conductive member has a protrusion provided at the first joint portion and protruding in the thickness direction toward the first electrode, The semiconductor device according to claim 1 , wherein the protrusion is in contact with the first electrode.

19. the conductive member has a recessed portion provided at the first joint portion and recessed in the thickness direction toward the first electrode, The semiconductor device according to claim 18 , wherein the recess overlaps the protrusion when viewed in the thickness direction.

20. The semiconductor device according to claim 19 , wherein the dimension of the protrusion in the thickness direction is equal to or smaller than a thickness of the first bonding portion.

21. the protrusions include a first protrusion and a second protrusion positioned apart from each other in a direction perpendicular to the thickness direction, 19. The semiconductor device according to claim 18, wherein the first convex portion and the second convex portion extend in a direction perpendicular to the thickness direction and a direction in which the first convex portion and the second convex portion are separated from each other.