Electronic apparatus, and operation method for electronic apparatus

Abstract

Provided is an electronic apparatus that is capable of eye tracking. This electronic apparatus has a display, an image processing unit, and a control unit. The display has a light-emitting device and a light-receiving device. The light-emitting device has the function of radiating light at the eye of a user as a display image. The light-receiving device has the function of capturing an image of the retina of the eye of the user as a captured image. The image processing unit has the function of detecting the macula of the retina from the captured image and the function of calculating location data for the macula. The control unit has the function of acquiring the location at which the sightline of the user meets the display image from the location data for the macula.

Description

Electronic device and method of operating electronic device

[0001] One embodiment of the present invention relates to an electronic device and a method of operating the electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of the invention disclosed in this specification and the like relates to an object, a driving method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a power storage device, an imaging device, a memory device, a signal processing device, a processor, an electronic device, a system, a driving method thereof, a manufacturing method thereof, or an inspection method thereof.

[0003] In recent years, improvements have been made in various aspects in electronic devices for XR (Extended Reality or Cross Reality), such as VR (Virtual Reality) and AR (Augmented Reality), as well as display devices included in mobile phones such as smartphones, tablet information terminals, notebook PCs (personal computers), etc. For example, display devices with increased pixel density, improved color reproducibility (NTSC ratio), smaller drive circuits, or reduced power consumption have been developed.

[0004] Furthermore, display devices that have new functions added by providing circuits other than display pixel circuits in the display area of ​​the display device are also being developed. For example, Patent Document 1 discloses a display device that includes an imaging pixel circuit in addition to the display pixel circuit in the display area, and a method for detecting an eye or the vicinity of the eye as an image using the display device.

[0005] International Publication No. 2019 / 243955

[0006] A method of measuring the movement of a subject's eyeballs and tracking the subject's gaze direction is called eye tracking. Note that in this specification and the like, eye tracking may also be referred to as gaze tracking. Eye tracking is expected to be applied to, for example, sports, education, marketing, danger detection, health management, and user interfaces for electronic devices. Therefore, various gaze tracking methods have been proposed in recent years.

[0007] An object of one embodiment of the present invention is to provide an electronic device capable of eye tracking, or to provide an electronic device capable of detecting a user's blink, or to provide a novel electronic device.

[0008] Another object of one embodiment of the present invention is to provide a method for operating an electronic device capable of eye tracking.Another object of one embodiment of the present invention is to provide a method for operating an electronic device capable of detecting a user's blink.Another object of one embodiment of the present invention is to provide a method for operating a novel electronic device.

[0009] Note that the problems of one embodiment of the present invention are not limited to the problems listed above. The problems listed above do not preclude the existence of other problems. Note that the other problems are problems not mentioned in this section, which will be described below. Problems not mentioned in this section can be derived by a person skilled in the art from the description in the specification or drawings, and can be appropriately extracted from these descriptions. Note that one embodiment of the present invention solves at least one of the problems listed above and other problems. Note that one embodiment of the present invention does not necessarily solve all of the problems listed above and other problems.

[0010] (1) One aspect of the present invention is an electronic device including a display device, an image processing unit, and a control unit. The display device includes a light-emitting device and a light-receiving device. The light-emitting device emits light to a user's eye as a display image, and the light-receiving device captures an image of the retina of the user's eye as a captured image. The image processing unit detects the macula included in the retina from the captured image and calculates position data of the macula. The control unit acquires the position of the user's gaze on the display image from the position data of the macula.

[0011] (2) Alternatively, in one aspect of the present invention, in the above (1), the image processing unit may have a function of detecting an out-of-focus object included in the captured image from the captured image and detecting a blink of the user.

[0012] (3) Alternatively, in one aspect of the present invention, in the above (1) or (2), the image processing unit may include a product-sum calculation circuit and a circuit that calculates an activation function.

[0013] (4) Another aspect of the present invention is a method for operating an electronic device having a display device. The display device has a light-emitting device, a light-receiving device, and an image processing unit. The method for operating the electronic device includes a first step, a second step, and a third step. The first step includes illuminating a retina of a user's eye with light from the light-emitting device to form a display image. The second step includes capturing light reflected from the retina with the light-receiving device to form a captured image. The third step includes acquiring coordinates of a macula included in the retina from the captured image by the image processing unit.

[0014] (5) Alternatively, one aspect of the present invention may be a method for operating the electronic device having the control unit in the above (4). The method for operating the electronic device includes a fourth step, in which the control unit acquires a position of the user's gaze on the display image from the coordinates of the macula, and updates the display image according to the position.

[0015] (6) Alternatively, one aspect of the present invention may be a method for operating an electronic device according to the above (4) or (5), further comprising a fifth step and a sixth step. The fifth step includes a step in which an image processing unit detects an out-of-focus area included in the captured image to detect a blink of the user. The sixth step includes a step in which, when a blink of the user is detected in the fifth step, the displayed image is updated.

[0016] (7) Another embodiment of the present invention may be a method for operating an electronic device in any one of (4) to (6) above, wherein the image processing unit includes a product-sum calculation circuit and a circuit that calculates an activation function.

[0017] According to one embodiment of the present invention, an electronic device capable of eye tracking can be provided. Alternatively, according to one embodiment of the present invention, an electronic device capable of detecting a user's blink can be provided. Alternatively, according to one embodiment of the present invention, a novel electronic device can be provided.

[0018] According to another embodiment of the present invention, a method for operating an electronic device capable of eye tracking can be provided. According to another embodiment of the present invention, a method for operating an electronic device capable of detecting a user's blink can be provided. According to another embodiment of the present invention, a method for operating a novel electronic device can be provided.

[0019] The effects of one embodiment of the present invention are not limited to the effects listed above. The effects listed above do not preclude the existence of other effects. The other effects are described below and are not mentioned in this section. Effects not mentioned in this section can be derived by a person skilled in the art from the description in the specification or drawings, and can be extracted as appropriate from these descriptions. One embodiment of the present invention has at least one of the effects listed above and other effects. Therefore, one embodiment of the present invention may not have the effects listed above in some cases.

[0020] 1A and 1B are diagrams illustrating an example of a path of light between a display device provided in an electronic device and a user's eye. 2A and 2B are diagrams illustrating an example of a path of light between a display device provided in an electronic device and a user's eye. 3A is a diagram illustrating an example of an image displayed by a display device provided in an electronic device, and 3B is a diagram illustrating an example of an image captured by an imaging circuit provided in the electronic device. 4A is a block diagram illustrating an example of the configuration of an electronic device, and 4B is a block diagram illustrating an example of the configuration of a display device. 5A and 5B are schematic cross-sectional views illustrating an example of the configuration of a display device provided in an electronic device. 6A and 6B are schematic cross-sectional views illustrating an example of the configuration of a display device provided in an electronic device. 7 is a flowchart illustrating an example of the operation of the electronic device. 8A to 8D are diagrams illustrating an example of updating an image displayed by a display device provided in an electronic device. 9 is a flowchart illustrating an example of the operation of the electronic device. 10 is a block diagram illustrating an example of the configuration of an arithmetic circuit. 11 is a circuit diagram illustrating an example of the configuration of a circuit included in the arithmetic circuit. 12 is a schematic cross-sectional view illustrating an example of the configuration of a display device. 13 is a block diagram illustrating an example of the configuration of a display device. FIG. 14 is a cross-sectional view showing a structural example of a display device. FIGS. 15A to 15D are schematic views showing a structural example of a light-emitting device. FIG. 16 is a cross-sectional view showing a structural example of a display device. FIGS. 17A and 17B are cross-sectional views showing a structural example of a display device. FIGS. 18A and 18B are cross-sectional views showing a structural example of a display device. FIGS. 19A and 19B are cross-sectional views showing a structural example of a display device. FIGS. 20A and 20B are cross-sectional views showing a structural example of a display device. FIGS. 21A to 21F are cross-sectional views showing an example of a manufacturing method of a display device. FIG. 22A is a circuit diagram showing a structural example of a pixel circuit included in a display device, and FIG. 22B is a perspective view showing a structural example of a pixel circuit included in a display device. FIGS. 23A to 23D are circuit diagrams showing a structural example of a pixel circuit included in a display device. FIGS. 24A to 24D are circuit diagrams showing a structural example of a pixel circuit included in a display device. 25A and 25B are top views showing configuration examples of a light-emitting device and a light-receiving device included in a display device.26A to 26D are cross-sectional schematic diagrams showing configuration examples of a light-emitting device, a light-receiving device, and connection electrodes included in a display device. FIGS. 27A to 27G are top views showing an example of a pixel. FIGS. 28A to 28F are top views showing an example of a pixel. FIGS. 29A to 29H are top views showing an example of a pixel. FIGS. 30A to 30D are top views showing an example of a pixel. FIGS. 31A to 31D are top views showing an example of a pixel, and FIG. 31E is a cross-sectional view showing an example of a display device. FIGS. 32A and 32B are diagrams showing configuration examples of a display module. FIGS. 33A to 33F are diagrams showing configuration examples of electronic devices. FIGS. 34A to 34D are diagrams showing configuration examples of electronic devices. FIGS. 35A to 35C are diagrams showing configuration examples of electronic devices.

[0021] In this specification, a semiconductor device is a device that utilizes semiconductor characteristics, and refers to a circuit including a semiconductor element (e.g., a transistor, a diode, and a photodiode), or a device having such a circuit. A semiconductor device also refers to any device that can function by utilizing semiconductor characteristics. For example, an integrated circuit, a chip including an integrated circuit, and an electronic component that houses a chip in a package are all examples of a semiconductor device. Furthermore, a memory device, a display device, a light-emitting device, a lighting device, an electronic device, etc. may themselves be a semiconductor device or may include a semiconductor device.

[0022] Furthermore, when it is stated in this specification that X and Y are connected, it is understood that the following cases are disclosed in this specification: when X and Y are electrically connected, when X and Y are functionally connected, and when X and Y are directly connected. Therefore, it is not limited to a specific connection relationship, for example, a connection relationship shown in a figure or text, and connection relationships other than those shown in a figure or text are also understood to be disclosed in a figure or text. X and Y are understood to be objects (e.g., a device, an element, a circuit, wiring, an electrode, a terminal, a conductive film, or a layer).

[0023] As an example of a case where X and Y are electrically connected, one or more elements (for example, a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display device, a light-emitting device, and a load) that enable the electrical connection between X and Y can be connected between X and Y. The switch has a function of controlling on / off. In other words, the switch has a function of being in a conductive state (on state) or a non-conductive state (off state) and controlling whether or not a current flows.

[0024] As an example of a case where X and Y are functionally connected, one or more circuits that enable the functional connection between X and Y (for example, logic circuits (for example, inverters, NAND circuits, and NOR circuits), signal conversion circuits (for example, digital-analog conversion circuits, analog-digital conversion circuits, and gamma correction circuits), potential level conversion circuits (for example, power supply circuits such as step-up circuits or step-down circuits, and level shifter circuits that change the potential level of a signal), voltage sources, current sources, switching circuits, amplifier circuits (for example, circuits that can increase the signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, and buffer circuits), signal generation circuits, memory circuits, and control circuits) can be connected between X and Y. As an example, even if another circuit is sandwiched between X and Y, X and Y are considered to be functionally connected if a signal output from X is transmitted to Y.

[0025] It should be noted that when it is explicitly stated that X and Y are electrically connected, this includes the case where X and Y are electrically connected (i.e., the case where X and Y are connected with another element or another circuit sandwiched between them) and the case where X and Y are directly connected (i.e., the case where X and Y are connected without another element or another circuit sandwiched between them).

[0026] This specification also deals with a circuit configuration in which multiple elements are electrically connected to wiring (a wiring that supplies a constant potential or a wiring that transmits a signal). For example, if X and a wiring are directly connected and Y and the wiring are directly connected, this specification may state that X and Y are directly electrically connected.

[0027] For example, it can be expressed as follows: "X, Y, the source (sometimes referred to as either the first terminal or the second terminal) and the drain (sometimes referred to as the other of the first terminal or the second terminal) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source of the transistor, the drain of the transistor, and Y." Or, it can be expressed as follows: "The source of the transistor is electrically connected to X, the drain of the transistor is electrically connected to Y, and X, the source of the transistor, the drain of the transistor, and Y are electrically connected in this order." Or, it can be expressed as follows: "X is electrically connected to Y through the source and drain of the transistor, and X, the source of the transistor, the drain of the transistor, and Y are provided in this connection order." By using expressions similar to these examples to specify the order of connections in the circuit configuration, it is possible to distinguish between the source and drain of the transistor and determine the technical scope. Note that these expressions are merely examples and are not limiting. Here, X and Y are assumed to be objects (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, or a layer).

[0028] Note that even when independent components are shown electrically connected to each other in a circuit diagram, one component may have the functions of multiple components. For example, if part of a wiring also functions as an electrode, one conductive film has the functions of both a wiring and an electrode. Therefore, the term "electrically connected" in this specification also includes such cases where one conductive film has the functions of multiple components.

[0029] Furthermore, in this specification, a "resistance element" can be, for example, a circuit element having a resistance value higher than 0Ω, or a wiring having a resistance value higher than 0Ω. Therefore, in this specification, a "resistance element" includes a wiring having a resistance value, a transistor in which a current flows between the source and drain, a diode, or a coil. Therefore, the term "resistance element" can sometimes be replaced with terms such as "resistance," "load," or "region having a resistance value." Conversely, terms such as "resistance," "load," or "region having a resistance value" can sometimes be replaced with the term "resistance element." The resistance value can be, for example, preferably 1 mΩ or more and 10 Ω or less, more preferably 5 mΩ or more and 5 Ω or less, and even more preferably 10 mΩ or more and 1 Ω or less. Furthermore, for example, a resistance value can be replaced with a resistance value of 1 Ω or more and 1×10 ９ It may be set to Ω or less.

[0030] Furthermore, in this specification, a "capacitive element" can refer to, for example, a circuit element having a capacitance value higher than 0 F, a wiring region having a capacitance value higher than 0 F, a parasitic capacitance, or a gate capacitance of a transistor. Furthermore, terms such as "capacitive element," "parasitic capacitance," or "gate capacitance" can sometimes be replaced with the term "capacitance." Conversely, the term "capacitance" can sometimes be replaced with terms such as "capacitive element," "parasitic capacitance," or "gate capacitance." Furthermore, a "capacitance" (including a "capacitance" with three or more terminals) includes an insulator and a pair of conductors sandwiching the insulator. Therefore, the term "pair of conductors" in "capacitance" can be replaced with "pair of electrodes," "pair of conductive regions," "pair of regions," or "pair of terminals." Furthermore, the terms "one of the pair of terminals" and "the other of the pair of terminals" may be referred to as a first terminal and a second terminal, respectively. The capacitance value can be, for example, 0.05 fF or more and 10 pF or less. It may also be, for example, 1 pF or more and 10 μF or less.

[0031] Furthermore, in this specification, a transistor has three terminals called a gate, a source, and a drain. The gate is a control terminal that controls the conduction state of the transistor. The two terminals that function as a source or a drain are input / output terminals of the transistor. One of the two input / output terminals serves as a source and the other as a drain depending on the conductivity type (n-channel or p-channel) of the transistor and the level of the potential applied to the three terminals of the transistor. Therefore, in this specification, the terms "source" and "drain" may be interchangeable. Furthermore, in this specification, when describing the connection relationship of a transistor, the terms "one of the source or drain" (or first electrode or first terminal) and "the other of the source or drain" (or second electrode or second terminal) are used. Note that, depending on the structure of a transistor, a backgate may be included in addition to the three terminals described above. In this case, in this specification, one of the gate or backgate of the transistor may be referred to as a first gate, and the other of the gate or backgate of the transistor may be referred to as a second gate. Furthermore, for the same transistor, the terms "gate" and "backgate" may be interchangeable. Furthermore, when a transistor has three or more gates, the gates may be referred to as a first gate, a second gate, a third gate, and so on in this specification.

[0032] For example, in this specification, a transistor having a multi-gate structure with two or more gate electrodes can be used as an example of a transistor. In a multi-gate structure, the channel formation regions are connected in series, resulting in a structure in which multiple transistors are connected in series. Therefore, the multi-gate structure can reduce the off-state current and improve the breakdown voltage (reliability) of the transistor. Alternatively, when operating in the saturation region, the multi-gate structure can provide voltage-current characteristics with a flat slope, such that the current between the drain and source does not change significantly even when the voltage between the drain and source changes. By utilizing voltage-current characteristics with a flat slope, an ideal current source circuit or an active load with a very high resistance value can be realized. As a result, a differential circuit or a current mirror circuit with excellent characteristics can be realized.

[0033] Furthermore, in this specification, circuit elements such as a "light-emitting device" and a "light-receiving device" may have polarities referred to as an "anode" and a "cathode." In the case of a "light-emitting device," applying a forward bias (applying a positive potential relative to the "cathode" to the "anode") may cause the "light-emitting device" to emit light. In the case of a "light-receiving device," applying zero bias or a reverse bias (applying a negative potential relative to the "cathode" to the "anode") and irradiating the "light-receiving device" with light may generate a current between the "anode" and the "cathode." As described above, the "anode" and the "cathode" may be treated as input / output terminals in circuit elements such as a "light-emitting device" and a "light-receiving device." In this specification, the "anode" and the "cathode" in circuit elements such as a "light-emitting device" and a "light-receiving device" may be referred to as terminals (first terminal, second terminal, etc.). For example, one of the "anode" or the "cathode" may be referred to as a first terminal, and the other of the "anode" or the "cathode" may be referred to as a second terminal.

[0034] Furthermore, even when a single circuit element is shown on a circuit diagram, the circuit element may include multiple circuit elements. For example, when a single resistor is shown on a circuit diagram, this includes two or more resistors electrically connected in series. For example, when a single capacitor is shown on a circuit diagram, this includes two or more capacitors electrically connected in parallel. For example, when a single transistor is shown on a circuit diagram, this includes two or more transistors electrically connected in series, with the gates of the respective transistors electrically connected to each other. Similarly, when a single switch is shown on a circuit diagram, this includes two or more transistors, with the switch including two or more transistors electrically connected in series or parallel, and the gates of the respective transistors electrically connected to each other.

[0035] In this specification and the like, a node can be referred to as a terminal, a wiring, an electrode, a conductive layer, a conductor, or an impurity region depending on the circuit configuration and device structure. A terminal or a wiring can also be referred to as a node.

[0036] Furthermore, in this specification and the like, the terms "voltage" and "potential" can be interchanged as appropriate. "Voltage" refers to the potential difference from a reference potential. For example, if the reference potential is the ground potential (earth potential), then "voltage" can be interchanged with "potential." Note that ground potential does not necessarily mean 0 V. Furthermore, potential is relative, and as the reference potential changes, the potential applied to wiring, the potential applied to a circuit, etc., the potential output from a circuit, etc. also changes.

[0037] Furthermore, in this specification and the like, the terms "high-level potential" and "low-level potential" do not mean specific potentials. For example, when two wirings are both described as "functioning as wirings that supply a high-level potential," the high-level potentials provided by both wirings do not have to be equal to each other. Similarly, when two wirings are both described as "functioning as wirings that supply a low-level potential," the low-level potentials provided by both wirings do not have to be equal to each other.

[0038] Furthermore, "current" refers to the phenomenon of charge transfer (electrical conduction). For example, the statement "electrical conduction of a positively charged body is occurring" can be rephrased as "electrical conduction of a negatively charged body is occurring in the opposite direction." Therefore, in this specification, unless otherwise specified, "current" refers to the phenomenon of charge transfer (electrical conduction) associated with the movement of carriers. Examples of carriers here include electrons, holes, anions, cations, and complex ions, and the carriers differ depending on the system through which the current flows (e.g., semiconductor, metal, electrolyte, and vacuum). Furthermore, the "direction of current" in wiring, etc., refers to the direction in which positively charged carriers move and is expressed as a positive current amount. In other words, the direction in which negatively charged carriers move is opposite to the direction of current and is expressed as a negative current amount. Therefore, in this specification, unless otherwise specified regarding the positive / negative sign of the current (or the direction of current), the statement "current flows from element A to element B" can be rephrased as "current flows from element B to element A." Furthermore, the statement "current is input to element A" can be rephrased as "current is output from element A."

[0039] Furthermore, in this specification, ordinal numbers such as "first," "second," and "third" are used to avoid confusion between components. Therefore, they do not limit the number of components. Furthermore, they do not limit the order of the components. For example, a component referred to as "first" in one embodiment of this specification may be a component referred to as "second" in another embodiment or in the claims. Furthermore, for example, a component referred to as "first" in one embodiment of this specification may be omitted in another embodiment or in the claims.

[0040] Furthermore, in this specification, terms indicating arrangement such as "above" and "below" may be used for convenience in describing the positional relationship between components with reference to the drawings. Furthermore, the positional relationship between components changes as appropriate depending on the direction in which each component is depicted. Therefore, the terms are not limited to those described in the specification, and can be rephrased appropriately depending on the situation. For example, the expression "insulator located on the upper surface of a conductor" can be rephrased as "insulator located on the lower surface of a conductor" by rotating the orientation of the drawing 180 degrees.

[0041] Furthermore, the terms "above" and "below" do not limit the positional relationship of components to being directly above or below and in direct contact with each other. For example, the expression "electrode B on insulating layer A" does not require that electrode B be formed in direct contact with insulating layer A, and does not exclude the inclusion of other components between insulating layer A and electrode B. Similarly, the expression "electrode B above insulating layer A" does not require that electrode B be formed in direct contact with insulating layer A, and does not exclude the inclusion of other components between insulating layer A and electrode B. Similarly, the expression "electrode B below insulating layer A" does not require that electrode B be formed in direct contact below insulating layer A, and does not exclude the inclusion of other components between insulating layer A and electrode B.

[0042] Furthermore, in this specification, terms such as "row" and "column" may be used to describe components arranged in a matrix and their positional relationships. Furthermore, the positional relationships between components change as appropriate depending on the direction in which each component is depicted. Therefore, the terms are not limited to those used in the specification, and may be rephrased appropriately depending on the situation. For example, the expression "row direction" may be rephrased as "column direction" by rotating the orientation of the drawing by 90 degrees.

[0043] Furthermore, in this specification and the like, the terms "film" and "layer" can be interchanged depending on the situation. For example, the term "conductive layer" may be changed to the term "conductive film." Or, for example, the term "insulating film" may be changed to the term "insulating layer." Or, in some cases or depending on the situation, the terms "film" and "layer" may not be used and may be replaced with other terms. For example, the terms "conductive layer" or "conductive film" may be changed to the term "conductor." Or, for example, the terms "insulating layer" and "insulating film" may be changed to the term "insulator."

[0044] Furthermore, in this specification and the like, terms such as "electrode," "wiring," and "terminal" do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring," and vice versa. Furthermore, terms such as "electrode" or "wiring" include cases where multiple "electrodes" or "wirings" are integrally formed. Furthermore, for example, a "terminal" may be used as part of a "wiring" or "electrode," and vice versa. Furthermore, the term "terminal" includes cases where multiple "electrodes," "wirings," or "terminals" are integrally formed. Therefore, for example, an "electrode" can be part of a "wiring" or "terminal," and a "terminal" can be part of a "wiring" or "electrode." Furthermore, terms such as "electrode," "wiring," and "terminal" may be replaced with the term "region" in some cases.

[0045] Furthermore, in this specification and the like, terms such as "wiring," "signal line," and "power line" may be interchangeable depending on the circumstances. For example, the term "wiring" may be changed to the term "signal line." For example, the term "wiring" may be changed to the term "power line." Vice versa, terms such as "signal line" or "power line" may be changed to the term "wiring." The term "power line" may be changed to the term "signal line." Vice versa, the term "signal line" may be changed to the term "power line." Furthermore, the term "potential" applied to a wiring may be changed to the term "signal" depending on the circumstances. Vice versa, the term "signal" may be changed to the term "potential."

[0046] In this specification and the like, a metal oxide refers to an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as oxide semiconductors or simply as OSs), and the like. For example, when a metal oxide is contained in a channel formation region of a transistor, the metal oxide may be referred to as an oxide semiconductor. In other words, when a metal oxide can form a channel formation region of a transistor having at least one of an amplifying function, a rectifying function, and a switching function, the metal oxide can be referred to as a metal oxide semiconductor. Furthermore, an OS transistor can be referred to as a transistor including a metal oxide or an oxide semiconductor.

[0047] In this specification and the like, nitrogen-containing metal oxides may also be collectively referred to as metal oxides. Nitrogen-containing metal oxides may also be referred to as metal oxynitrides.

[0048] In this specification and the like, the term "semiconductor impurities" refers to, for example, elements other than the main component constituting the semiconductor layer. For example, an element with a concentration of less than 0.1 atomic % is an impurity. The presence of impurities may cause one or more of the following: an increase in the defect level density of the semiconductor, a decrease in carrier mobility, and a decrease in crystallinity. When the semiconductor is an oxide semiconductor, impurities that change the semiconductor characteristics include, for example, Group 1 elements, Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, and transition metals other than the main component, particularly, for example, hydrogen (also included in water), lithium, sodium, silicon, boron, phosphorus, carbon, and nitrogen. When the semiconductor is a silicon layer, impurities that change the semiconductor characteristics include, for example, Group 1 elements, Group 2 elements, Group 13 elements, Group 15 elements, etc. (excluding oxygen and hydrogen).

[0049] In this specification, a switch refers to a device that can be in a conductive state (on state) or a non-conductive state (off state) and has the function of controlling whether or not a current flows. Alternatively, a switch refers to a device that has the function of selecting and switching a path through which a current flows. Therefore, a switch may have two or more terminals through which a current flows, in addition to a control terminal. As an example, an electrical switch, a mechanical switch, or the like can be used. In other words, the switch is not limited to a specific type as long as it can control a current.

[0050] Examples of electrical switches include transistors (e.g., bipolar transistors, MOS transistors, etc.), diodes (e.g., PN diodes, PIN diodes, Schottky diodes, MIM (Metal Insulator Metal) diodes, MIS (Metal Insulator Semiconductor) diodes, and diode-connected transistors), or logic circuits combining these. When a transistor is used as a switch, the "conductive state" of the transistor refers to, for example, a state in which the source electrode and drain electrode of the transistor can be considered to be electrically short-circuited, or a state in which current can flow between the source electrode and drain electrode. The "non-conductive state" of the transistor refers to a state in which the source electrode and drain electrode of the transistor can be considered to be electrically disconnected. When a transistor is operated simply as a switch, the polarity (conductivity type) of the transistor is not particularly limited.

[0051] An example of a mechanical switch is a switch that uses MEMS (microelectromechanical systems) technology. This switch has a mechanically movable electrode, and the movement of the electrode controls whether the switch is conductive or non-conductive.

[0052] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0053] In this specification and the like, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be combined with a colored layer (e.g., a color filter) to form a full-color display device.

[0054] Light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit includes one or more light-emitting layers. When two light-emitting layers are used to obtain white light emission, light-emitting layers may be selected such that the emission colors of the two light-emitting layers are complementary to each other. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the entire light-emitting device emits white light may be obtained. When three or more light-emitting layers are used to obtain white light emission, the emission colors of the three or more light-emitting layers may be combined to produce a configuration in which the entire light-emitting device emits white light.

[0055] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, light from the light-emitting layers of the light-emitting units may be combined to obtain white light emission. The configuration for obtaining white light emission is the same as that of the single-structure device. In a tandem-structure device, it is preferable to provide an intermediate layer such as a charge-generating layer between the light-emitting units.

[0056] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. If it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0057] In this specification, "parallel" refers to a state in which two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, it also includes cases where the angle is -5° or more and 5° or less. Furthermore, "substantially parallel" or "roughly parallel" refers to a state in which two straight lines are arranged at an angle of -30° or more and 30° or less. Furthermore, "perpendicular" refers to a state in which two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes cases where the angle is 85° or more and 95° or less. Furthermore, "substantially perpendicular" or "approximately perpendicular" refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0058] In this specification and the like, the configurations shown in each embodiment can be appropriately combined with the configurations shown in other embodiments to form one aspect of the present invention. In addition, when multiple configuration examples are shown in one embodiment, the configuration examples can be appropriately combined with each other.

[0059] In addition, the content (or even a part of the content) described in one embodiment can be applied, combined, or replaced with at least one of another content (or even a part of the content) described in that embodiment and one or more other content (or even a part of the content) described in another embodiment.

[0060] The contents described in the embodiments refer to the contents described in each embodiment using various figures or the contents described using text in the specification.

[0061] Furthermore, a figure (or even a part thereof) described in one embodiment can be combined with another part of that figure, another figure (or even a part thereof) described in that embodiment, and at least one figure (or even a part thereof) described in one or more other embodiments to form even more figures.

[0062] The embodiments described in this specification are described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways, and that various changes in form and details can be made without departing from the spirit and scope of the invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments. Note that in the configuration of the invention of the embodiments, the same reference numerals are used in different drawings for the same parts or parts having similar functions, and repeated description thereof may be omitted. Also, in perspective views and the like, the description of some components may be omitted to ensure clarity of the drawings.

[0063] In this specification, when the same reference numeral is used for multiple elements, and particularly when it is necessary to distinguish between them, an identification symbol such as "_1", "[n]", "[m, n]" may be added to the reference numeral. Also, when an identification symbol such as "_1", "[n]", "[m, n]" is added to the reference numeral in the drawings, etc., the identification symbol may not be added if it is not necessary to distinguish between them in this specification.

[0064] In addition, in the drawings of this specification, the size, layer thickness, or region may be exaggerated for clarity. Therefore, the drawings are not necessarily limited to the scale. Note that the drawings are schematic illustrations of ideal examples, and are not limited to the shapes or values ​​shown in the drawings. For example, variations in signals, voltages, or currents due to noise, or variations in signals, voltages, or currents due to timing differences may be included.

[0065] Embodiment 1 In this embodiment, a configuration of an XR device, which is an electronic device of one embodiment of the present invention, will be described.

[0066] 1A and 1B are cross-sectional views showing, as an example, a display device DSP and a lens LNS provided in an XR device, and a user's eye ME, and also show the path of light emitted from the display device to the user's eye.

[0067] 1A and 1B, the display device DSP has, as an example, a plurality of display pixel circuits. The plurality of display pixel circuits are preferably arranged regularly, for example, in a matrix. Furthermore, for example, the display device DSP shown in FIGS. 1A and 1B has a pixel circuit PUa and a pixel circuit PUb, and each of the pixel circuit PUa and the pixel circuit PUb includes a display pixel circuit.

[0068] Each of the plurality of display pixel circuits has a function of emitting light based on a video signal input to the display device DSP onto the display surface of the display device DSP. For example, Fig. 1A shows how light LIT1a based on a video signal is emitted from a display pixel circuit included in pixel circuit PUa onto the display surface of the display device DSP, and Fig. 1B shows how light LIT1b based on a video signal is emitted from a display pixel circuit included in pixel circuit PUb onto the display surface of the display device DSP.

[0069] In addition, the lens LNS has a function of refracting light emitted from the display device DSP and emitting the light in the direction of the user's eye ME, for example. For example, Fig. 1A shows the lens LNS refracting light LIT1a and emitting the light in the direction of the user's eye ME, and Fig. 1B shows the lens LNS refracting light LIT1b and emitting the light in the direction of the user's eye ME.

[0070] Also, in FIG. 1A, the user's eye ME has a cornea KM, a ciliary body MYT (in this specification, the ciliary body MYT also includes the ciliary body zonules (Zunn's zonules)), a lens SST, a vitreous body GT, a retina MM, a choroid MRM, a sclera KYM, and an optic nerve SK.

[0071] Furthermore, a portion of the retina MM includes the macula YH. The macula YH contains a large concentration of cells capable of recognizing fine details and colors. The macula YH also contains the fovea CSK. The user recognizes the light (image) focused on the macula YH in the user's eye as a point or area at the line of sight (sometimes called the point of gaze).

[0072] 1A shows a state in which light LIT1a emitted from a display pixel circuit included in a pixel circuit PUa of a display device DSP is focused on a macula YH via a lens LNS and a crystalline lens SST. At this time, a user recognizes the light (image) displayed by the pixel circuit PUa as a point or area in front of the user's line of sight.

[0073] 1B shows a state in which light LIT1b emitted from a display pixel circuit included in a pixel circuit PUb of the display device DSP is condensed onto a region of the retina MM other than the macula YH via a lens LNS and a crystalline lens SST. At this time, the user recognizes the light (image) displayed by the pixel circuit PUb as a point at the line of sight, or an image that is not a region but is within the user's field of vision.

[0074] The crystalline lens SST of the user's eye ME, for example, functions as a lens for focusing light on the fovea CSK described above. The ciliary body MYT also has the function of changing the thickness of the crystalline lens SST. The degree of focusing of light on the fovea CSK can be adjusted by changing the thickness of the crystalline lens SST. In other words, the crystalline lens SST and the ciliary body MYT can adjust the focus of light incident on the user's eye ME.

[0075] In addition, the distance between the display device DSP and the lens LNS (or the distance between the lens LNS and the user's eye ME) can be freely determined, and for example, it is preferable that the distance between the display device DSP and the lens LNS is a distance at which light emitted from the display pixel circuit is focused on the retina MM of the user's eye ME.

[0076] As described above, when an image is displayed on the display unit of the display device DSP, light from a plurality of display pixel circuits included in the display unit can be focused onto the retina MM by changing at least one of the thickness of the crystalline lens SST and the distance between the display device DSP and the lens LNS. In particular, the user can recognize the light (image) focused on the macula YH on the retina MM as a point or area in front of the user's line of sight.

[0077] Next, consider a case where the display unit of the display device DSP is provided with not only a plurality of display pixel circuits but also a plurality of imaging pixel circuits. It is preferable that the plurality of imaging pixel circuits are arranged in a regular pattern, such as a matrix, together with the plurality of display pixel circuits. Furthermore, for example, the plurality of imaging pixel circuits may be included in the pixel circuit together with the display pixel circuits. Here, it is assumed that the pixel circuit PUa and the pixel circuit PUb shown in FIGS. 1A and 1B, respectively, include not only the display pixel circuits but also the imaging pixel circuits.

[0078] Each of the multiple imaging pixel circuits has the function of generating an electrical signal (e.g., current or voltage) corresponding to light incident on an imaging device included in the multiple imaging pixel circuits, and outputting the electrical signal.

[0079] When light is incident on an object in a perpendicular direction, the light is reflected in a direction 180 degrees from the direction of incidence. In other words, the path of light that is incident on an object in a perpendicular direction and the path of light reflected by the object are approximately the same.

[0080] 1A shows how light LIT1a from the display pixel circuit of pixel circuit PUa reaches the macula YH. Also, FIG. 2A shows how light LIT1a is reflected by the macula YH. As shown in FIG. 2A, light LIT2a, which is reflected light from the macula YH, reaches pixel circuit PUa via substantially the same path as light LIT1a.

[0081] 1B shows how light LIT1b from the display pixel circuit of pixel circuit PUb reaches an area of ​​the retina MM other than the macula YH. Also, FIG. 2B shows how light LIT1b is reflected from an area of ​​the retina MM other than the macula YH. As shown in FIG. 2B, light LIT2b, which is reflected light from the retina MM, reaches the pixel circuit PUb via approximately the same path as light LIT1b.

[0082] For this reason, by performing an imaging operation using the imaging pixel circuits included in all pixel circuits in the display device DSP, it is possible to capture an image of the retina MM and the macula YH, which is a partial region of the retina MM, as a image. Furthermore, since the user recognizes the light (image) incident on the macula YH as a point or region at the front of the line of sight, the position (coordinates) at which the macula YH is captured in the image can tell which region of the image displayed on the display device DSP the user is directing their gaze to.

[0083] Specifically, the address of the imaging pixel circuit that captured the macular lutea YH from the image is obtained, and the display pixel circuit included in the same pixel circuit as the imaging pixel circuit is identified. Light emitted from the display pixel circuit that is included in the same pixel circuit as the imaging pixel circuit that captured the macular lutea YH reaches the macular lutea YH. As a result, of the display images on the display device DSP, the display image displayed by the display pixel circuit that is included in the same pixel circuit as the imaging pixel circuit that captured the macular lutea YH is the area toward which the user is directing their gaze.

[0084] Here, as an example, the relationship between a display image displayed on the display device DSP and a captured image captured by the imaging pixel circuits included in the display device DSP will be described. Fig. 3A shows a display image DIM output to a plurality of display pixel circuits included in the display device DSP, and Fig. 3B shows a captured image TIM captured by a plurality of imaging pixel circuits included in the display device DSP.

[0085] 3A shows an example in which the display device DSP displays a display image DIM including a moving object VCL, while FIG. 3B shows the eyes of a user viewing the display image DIM as an imaged image TIM captured by a plurality of imaging pixel circuits included in the display device DSP.

[0086] 3B shows an example in which the retina MM is imaged. Specifically, the macula YH including the fovea CSK and blood vessels MK extending over the retina MM are imaged. In particular, the macula YH and the fovea CSK are imaged at or near the position of the i-th row and j-th column (i and j are integers equal to or greater than 1) of the pixel array of the display device DSP.

[0087] In the display image DIM of FIG. 3A, the steering wheel HDL and pillar PIL provided on the vehicle VCL, and the driver's seat are located at or near the position of the i-th row and j-th column.

[0088] As explained in Figures 1A, 1B, 2A, and 2B, the path of light that reaches the macula YH from the display pixel circuit and the path of light that is reflected by the macula YH and reaches the display pixel circuit (imaging pixel circuit) are roughly the same. Therefore, it can be determined from the positions of the macula YH and the fovea CSK, which are captured in the captured image TIM of Figure 3B, that a user looking at the display image DIM of Figure 3A is particularly directing their gaze toward the steering wheel HDL, pillar PIL, and driver's seat.

[0089] Furthermore, by repeatedly performing the imaging operation, it is possible to continuously acquire the point or area of ​​the image displayed on the display device DSP at which the user is looking, thereby realizing eye tracking of the user.

[0090] <Configuration Example> The configuration of an electronic device according to one aspect of the present invention will be described with reference to the block diagrams shown in Figures 4A and 4B. Electronic device 50 shown in Figure 4A includes display devices DSPs (display devices DSP_R and display devices DSP_L), optical systems 51 (optical systems 51_R and optical systems 51_L), an image processing unit 52, a motion detection unit 53, audio 54, a camera 55, a control unit 56, a communication unit 57, and a battery 58. The display devices DSPs, image processing unit 52, motion detection unit 53, audio 54, camera 55, control unit 56, and communication unit 57 transmit and receive various signals to and from each other via bus wiring BW.

[0091] As shown in FIG. 4B , the display device DSP includes a light-emitting device 10R, a light-emitting device 10G, and a light-emitting device 10B as display elements, a light-emitting device 10LS as a light source, a light-receiving device 10PS as an image sensor, a drive circuit unit 20, and a frame memory 22. The drive circuit unit 20 includes a gate driver circuit and a source driver circuit. One or more gate driver circuits and one or more source driver circuits may be provided. In the example shown in FIG. 4A , two display devices DSP are provided, one for the right eye and one for the left eye, but the number of display devices may be one or three or more.

[0092] In the following, when describing matters common to the light-emitting device 10R, the light-emitting device 10G, the light-emitting device 10B, and the light-emitting device 10LS, the symbols attached to the reference numerals may be omitted and the light-emitting device may be referred to as the light-emitting device 10. Alternatively, the light-emitting device 10 may refer to one or more of the light-emitting device 10R, the light-emitting device 10G, the light-emitting device 10B, and the light-emitting device 10LS.

[0093] The optical system 51 includes, for example, a lens. Specifically, the lens may be the lens LNS described in FIGS. 1A, 1B, 2A, and 2B. The optical system 51 may include one or more elements selected from a reflector, a half mirror, and a waveguide, as needed. In the example shown in FIG. 4A, two optical systems 51 are provided, one for the right eye and one for the left eye, but the number of optical systems may be one, or three or more.

[0094] The audio 54 includes, for example, a microphone and / or a speaker. The motion detection unit 53 includes an inertial sensor and has the function of detecting the user's body movements. Note that the inertial sensor here refers to a sensor that detects the acceleration and angular velocity of an object. The control unit 56 includes a CPU, a GPU, and a memory. The communication unit 57 performs wireless communication and can exchange data with other terminals or servers on a network. Note that the control unit 56 and communication unit 57, enclosed by dotted lines in FIG. 4A, may be provided separately from the electronic device. In this case, the bulk of the electronic device can be reduced.

[0095] The image data generated by the control unit 56 is sent to the display device DSP via the bus wiring BW. After being stored in the frame memory 22, the image data is passed through a source driver included in the drive circuit unit 20 and displayed on the light-emitting devices 10R, 10G, and 10B.

[0096] The data (analog data) acquired by the light receiving device 10PS is converted into digital data by the image processing unit 52 and sent to the control unit 56. For example, the light receiving device 10PS acquires an image of the retina of the user's eye, and the image processing unit 52 identifies the position of the user's gaze from the image. The control unit 56 receives the gaze position data from the image processing unit 52 and reflects it in the image data that the user sees.

[0097] The image processing unit 52 has a function of performing image analysis. By performing image analysis, the position of the user's gaze can be identified from the image of the user's retina acquired by the light receiving device 10PS. In other words, gaze tracking can be performed using the image processing unit 52. A computational model such as an artificial neural network can be used for the image analysis. Note that the computation of an artificial neural network may involve product-sum operations and function operations (e.g., operations using activation functions). Therefore, the image processing unit 52 includes at least one of an arithmetic circuit capable of product-sum operations and function operations, and a processing device capable of executing a program including an artificial neural network.

[0098] For the image analysis, it is particularly preferable to use an arithmetic circuit having a function of performing a product-sum operation. By using such an arithmetic circuit, image analysis can be performed with low power. That is, the power consumption of a display device according to one embodiment of the present invention or an electronic device equipped with the display device can be reduced. Details of the arithmetic circuit having a function of performing a product-sum operation will be described in Embodiment 2.

[0099] As the artificial neural network used for the image analysis, deep learning is particularly preferred. Examples of deep learning include a convolutional neural network (CNN), a recurrent neural network (RNN), an autoencoder (AE), a variational autoencoder (VAE), a random forest, a support vector machine, gradient boosting, and a generative adversarial network (GAN).

[0100] Below, the structure of a display device included in an electronic device of one embodiment of the present invention will be described with reference to FIGS. 5A, 5B, 6A, and 6B. FIG.

[0101] [Configuration Example of Display Device] Schematic diagrams of the display device DSP shown in FIG. 4B included in an electronic device according to one embodiment of the present invention are shown in FIGS. 5A, 5B, 6A, and 6B. The display device DSP shown in FIG. 5A includes a substrate 11, a substrate 12, a light-emitting device 10, and a light-receiving device 10PS. The light-emitting device 10 includes a light-emitting device 10R, a light-emitting device 10G, and a light-emitting device 10B as display elements, and a light-emitting device 10LS as a light source, and is located on layer 16. The light-receiving device 10PS is provided on a support plate 13, a substrate 11 is provided on the light-receiving device 10PS, the light-emitting device 10 is provided on the substrate 11, a substrate 12 is provided on the light-emitting device 10, and a protective member 15 is provided on the substrate 12. The display device DSP shown in FIG. 5A has a configuration in which the light-emitting device 10R, the light-emitting device 10G, the light-emitting device 10B, the light-emitting device 10LS, and the light-receiving device 10PS are provided in one pixel region 19. Details of each component will be described later.

[0102] The light-emitting device 10 may be configured to include, for example, a light-emitting device 10R that emits red light, a light-emitting device 10G that emits green light, a light-emitting device 10B that emits blue light, and a light-emitting device 10LS that emits visible light. In this case, the light-emitting device 10R, the light-emitting device 10G, and the light-emitting device 10B function as display elements, and the light-emitting device 10LS functions as a light source. The number of light-emitting devices 10LS is not particularly limited and may be one, multiple, or zero. The light-emitting device 10 is disposed in a region sandwiched between a substrate 11 and a substrate 12. The substrate 11 is disposed between the support plate 13 and the light-emitting device 10, and the substrate 12 is disposed between the light-emitting device 10 and a protective member 15.

[0103] The light emitted by the light-emitting device 10LS preferably includes visible light. For example, the light-emitting device 10LS is preferably an element that emits monochromatic light whose emission spectrum has one peak in the visible light region, and more preferably an element that emits monochromatic light whose emission spectrum has a peak in the red wavelength region. Furthermore, the light-emitting device 10LS is preferably a light-emitting element having the same configuration as the light-emitting device 10R, the light-emitting device 10G, or the light-emitting device 10B. This allows the light-emitting device 10LS to be formed without increasing the number of fabrication steps. The light-emitting device 10LS may be a device that emits light whose emission spectrum has two or more peaks in the visible light region, or a device that emits light whose emission spectrum also has peaks in regions other than visible light (e.g., infrared light or ultraviolet light).

[0104] The light-receiving device 10PS has a function of detecting visible light. The light-receiving device 10PS preferably has optical sensitivity corresponding to the visible light emitted by the light-emitting device 10LS. Note that, if the light-emitting device 10LS is a device that emits light having a peak in a region other than the visible region in its emission spectrum, the light-receiving device 10PS is preferably a light-receiving device that has a function of detecting light in that region.

[0105] As shown in FIG. 5A , an image is displayed by light emitted from the light-emitting device 10R, the light-emitting device 10G, and the light-emitting device 10B. Visible light emitted from the light-emitting device 10LS reaches the retina MM inside the user's eye ME. Light reflected from the retina MM is detected by the light-receiving device 10PS, allowing for eye tracking. Therefore, the substrate 12 and the protective member 15 must transmit visible light emitted by the light-emitting device 10R, the light-emitting device 10G, the light-emitting device 10B, and the light-emitting device 10LS. Furthermore, the substrate 11, the substrate 12, and the protective member 15 must transmit visible light reflected by the retina MM of the eye ME. Therefore, the substrate 11, the substrate 12, and the protective member 15 are preferably translucent to visible light.

[0106] The substrates 11 and 12 may each be made of an insulator (insulating substrate) such as glass, quartz, ceramic, sapphire, or stabilized zirconia (e.g., yttria-stabilized zirconia). The substrates 11 and 12 may each be made of a resin, such as an insulating resin or a conductive resin. The substrates 11 and 12 may each be made of a semiconductor (semiconductor substrate) such as silicon, germanium, silicon carbide, silicon germanium, gallium arsenide, indium phosphide, or zinc oxide. The substrates 11 and 12 may each be made of a conductor (conductive substrate) such as a metal or alloy. The substrate on the side from which light is extracted from the light-emitting device 10 is made of a material that transmits the light. Using flexible materials for the substrates 11 and 12 can increase the flexibility of the display device DSP and enable it to be lightweight and thin. The substrate 11 or 12 may also include a polarizing plate.

[0107] Substrate 11 and substrate 12 may each be made of one or more materials selected from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, and cellulose nanofiber. One or both of substrates 11 and 12 may be made of glass having a thickness sufficient to provide flexibility.

[0108] As described above, in the display device DSP shown in FIG. 5A , the layer 16 in which the light-emitting device 10 including the light-emitting device 10LS is located overlaps the light-receiving device 10PS. In the layer 16 in which the light-emitting device 10 is located, the light-emitting device 10 may be electrically connected to a common electrode. Therefore, the display device DSP can irradiate light onto the retina MM inside the eye ME and receive light reflected from the retina MM without using a complex optical system. Furthermore, the distance between the light-emitting device 10LS and the light-receiving device 10PS is relatively small. Therefore, the detection sensitivity of light reflected from the retina MM inside the eye ME can be increased. Since the optical system configuration can be simplified, the display device can be miniaturized. Note that a portion of the light-emitting device 10LS may or may not overlap with the light-receiving device 10PS.

[0109] Note that one embodiment of the present invention is not limited thereto, and as shown in Fig. 5B , the light-receiving device 10PS may be provided together with the light-emitting device 10 between the substrate 11 and the substrate 12. Specifically, the display device DSP shown in Fig. 5B differs from the display device DSP shown in Fig. 5A in that the light-receiving device 10PS and the light-emitting device 10 are provided between the substrate 11 and the substrate 12. In the display device DSP shown in Fig. 5B , the light-receiving device 10PS is provided on the substrate 11, and therefore the substrate 11 may have low light-transmitting properties for visible light or may not be transmissive to infrared light in some cases.

[0110] Although the above describes a configuration in which the light-emitting device 10LS is provided within the pixel region 19, the present invention is not limited to this, and the light-emitting device 10LS may not be included in the pixel region 19. Specifically, as in the display device DSP shown in Fig. 6A , the display device DSP of Fig. 5A may not include the light-emitting device 10LS in the layer 16, and instead of the light emitted by the light-emitting device 10LS, light emitted by one or more selected from the light-emitting device 10R, the light-emitting device 10G, and the light-emitting device 10B may reach the retina MM inside the user's eye ME, and the light reflected from the retina MM may be detected by the light-receiving device 10PS. Furthermore, similar to the display device DSP of FIG. 6A, as in the display device DSP shown in FIG. 6B, the light-emitting device 10LS may not be provided in layer 16 in the display device DSP of FIG. 5B, and instead of the light emitted by the light-emitting device 10LS, light emitted by one or more selected from the light-emitting device 10R, the light-emitting device 10G, and the light-emitting device 10B may reach the retina MM inside the user's eye ME, and the reflected light from the retina MM may be detected by the light-receiving device 10PS.

[0111] Although the above describes a configuration in which a pixel is formed using three types of light-emitting elements, namely, the light-emitting device 10R that emits red (R) light, the light-emitting device 10G that emits green (G) light, and the light-emitting device 10B that emits blue (B) light, the present invention is not limited to this. For example, a pixel may be formed using one or more light-emitting elements selected from a light-emitting device that emits yellow (Y) light, a light-emitting device that emits orange (O) light, a light-emitting device that emits cyan (C) light, a light-emitting device that emits magenta (M) light, and a light-emitting device that emits white (W) light, or a pixel may be formed using two or more light-emitting devices having a light-emitting substance that emits light containing spectral components of two or more colors of R, G, and B.

[0112] In the display devices DSP shown in FIGS. 5B and 6B, the support plate 13 may not be provided in some cases.

[0113] 5A and 6A, a base material may be provided instead of the support plate 13, and an insulating layer may be provided instead of the substrate 11. For example, a material that can be used for the substrate 11 may be used as the base material. In this case, the light-receiving device 10PS may be provided on the base material. Alternatively, an insulating layer may be provided on the light-receiving device 10PS, and the light-emitting device 10 may be provided on the insulating layer. The insulating layer is preferably transparent to visible light.

[0114] In addition, in the display devices DSP shown in each of FIGS. 5A, 5B, 6A, and 6B, there are cases where the protective member 15 does not need to be provided.

[0115] [Operation Example 1 of Electronic Device] An operation example of an electronic device according to one embodiment of the present invention will be described below with reference to the flowchart shown in Fig. 7. The flowchart shown in Fig. 7 includes steps S61 to S64. Note that Fig. 7 includes "START" indicating the start of the operation and "END" indicating the end of the operation.

[0116] <Step S61> Step S61 includes a step of illuminating (or irradiating) the entire retina MM inside the user's eye ME with light emitted from a light source. The light source may be, for example, one or more of the light-emitting devices 10 (light-emitting device 10R, light-emitting device 10G, and light-emitting device 10B) and the light-emitting device 10LS included in the display device DSP of FIG. 4B .

[0117] <Step S62> Step S62 includes a step of capturing an image of light reflected from the retina MM with the light receiving device 10PS. By step S62, a captured image TIM can be obtained.

[0118] <Step S63> Step S63 includes a step in which the image processing unit 52 processes the captured image TIM acquired in step S62 to calculate position data (the position data is either a point or a range, and the position data can also be referred to as coordinates) on the captured image TIM where the macula YH and the fovea CSK are located. Note that the above-mentioned artificial neural network calculation model can be used as a method for processing the captured image TIM. By calculating the position data on the captured image TIM where the macula YH and the fovea CSK are located, the position of the user's gaze on the displayed image can be obtained.

[0119] <Step S64> Step S64 includes a step in which the control unit 56 updates the display image DIM based on the coordinates of the user's line of sight acquired in step S63.

[0120] The update of the display image DIM may involve, for example, increasing the image resolution of the portion of the display image DIM at the coordinates of the user's line of sight. At this time, the image resolution of the display area where the user's line of sight is not directed may be decreased. By displaying the image at a high resolution only in the portion where the user's line of sight is directed and displaying the image at a low resolution in other display areas, the load on the GPU included in the control unit 56 can be reduced.

[0121] Furthermore, step S64 may include a step of updating the display image DIM not only based on the coordinates of the user's line of sight, but also by the user gazing at the coordinates of the user's line of sight. Gazing here includes a case where the position of the user's line of sight does not change by more than a predetermined distance within a certain period of time.

[0122] An example of the content of updating the display image DIM is zooming in on an area around the coordinates of the user's line of sight. Specifically, for example, as shown in Fig. 8A , when the user gazes at an area around the coordinates of row i and column j of the display image DIM, the display device DSP may display a frame WK on the display image DIM and display an enlarged image of the area around the frame WK.

[0123] Specifically, for example, as shown in FIG. 8B, when a user gazes at the area around the coordinate of row i, column j of the display image DIM, the display device DSP may enlarge and display the display image DIM based on the coordinate of row i, column j.

[0124] Furthermore, an example of updating the display image DIM is launching an application and displaying a screen of the application. For example, an electronic device may be configured such that a user can gaze at a specific icon on a screen listing icons to launch an application associated with the icon. When the application is launched, the display device DSP may display a screen of the application in the display image DIM. Specifically, for example, as shown in FIG. 8C , when a user gazes at an icon located at or near the coordinate of row i and column j in the display image DIM, the display device DSP may display an area WD for displaying the application associated with the icon.

[0125] Furthermore, the content of updating the display image DIM may include, for example, displaying an icon that is not displayed in the display image DIM when the user gazes at an edge of the display image DIM on a screen on which icons are lined up. Specifically, for example, as shown in Fig. 8D , when the user gazes at the coordinate of row i and column j, which is the right edge of the display image DIM, or its vicinity, the display device DSP may scroll the icon from the right edge of the display image DIM in a direction toward the left edge of the display image DIM that the user is not gazing at, thereby displaying the icon that was not displayed.

[0126] After the operation of step S64, the operation of the flowchart in FIG. 7 ends.

[0127] As described above, by performing steps S61 to S64, the display image DIM displayed on the display device DSP can be updated in accordance with the position of the user's line of sight.

[0128] Furthermore, as described above, by performing steps S61 to S63 and sequentially acquiring the coordinates of the user's gaze, it is possible to track the user's gaze (eye tracking becomes possible). This makes it possible to, for example, understand what the user is paying attention to and analyze the user's behavior. Furthermore, it is possible to make an avatar (a character that represents the user and is displayed on a display device, etc.) reproduce the user's eye movements.

[0129] 1A and 1B, when the display image directed from the display device DSP to the retina MM of the user's eye ME is in focus, it can be said that the captured image captured by capturing light reflected from the retina MM is also in focus in Fig. 2A and 2B. Conversely, when the display image directed from the display device DSP to the retina MM of the user's eye ME is out of focus, it can be said that the captured image captured by capturing light reflected from the retina MM is also out of focus.

[0130] One example of a cause of an out-of-focus image of a captured image of light reflected from the retina MM is the presence of an obstacle on the optical path. If an object (obstacle) that blocks the light reflected from the retina MM (light emitted from the display device DSP toward the retina MM of the user's eye ME) is present on the path of the light, the captured image will include an image of the out-of-focus object (obstacle). Note that in this case, the captured image may not include an image of the retina MM.

[0131] The object (obstacle) described above can be, for example, an eyelid when blinking. In particular, when a display device DSP is used as an XR device, it is considered that there are few examples of the object other than an eyelid when blinking. In other words, when a captured image including an out-of-focus area is obtained in steps S61 to S64 described above, it can be assumed that the user blinked at the moment the image was captured. Therefore, by sequentially capturing images of the user's eyes, the user's blinks can be detected from the captured images.

[0132] An example of an operation for detecting a user's blink using an electronic device according to one embodiment of the present invention will be described below with reference to the flowchart shown in Fig. 9. The flowchart shown in Fig. 9 includes steps S61 to S64, S71, and S72. Note that Fig. 9 includes "START" indicating the start of the operation and "END" indicating the end of the operation.

[0133] 9 are similar to the operation example of steps S61 to S64 in the flowchart shown in Fig. 7. Therefore, for steps S61 to S64 shown in Fig. 9, the description of the flowchart in Fig. 7 should be referred to.

[0134] The operation of the flowchart in FIG. 9 differs from that of the flowchart in FIG. 7 in that the process proceeds to step S71 after the operation of step S62.

[0135] <Step S71> Step S71 includes a step in which the image processing unit 52 determines whether the captured image TIM acquired in step S62 includes an out-of-focus area. The aforementioned artificial neural network calculation model can be used as a method for this determination. Another method for this determination is to continuously acquire multiple captured images TIM over a certain period of time in step S62, compare the captured images TIM, and find an image that includes an out-of-focus area. By finding an out-of-focus area using the aforementioned processing method, it is determined whether the user has blinked. If the captured image TIM does not include an out-of-focus area (indicated as "NO" in FIG. 9 ), the process proceeds to step S63. If the captured image TIM includes an out-of-focus area (indicated as "YES" in FIG. 9 ), the process proceeds to step S72.

[0136] In step S71, when the image processing unit 52 determines that the captured image TIM includes an out-of-focus area, the blinking of the user is detected.

[0137] <Step S72> Step S72 may include a step of updating the display image DIM based on the content of the blink.

[0138] Furthermore, the content of the update of the display image DIM may be different depending on whether the user blinks briefly or long. Specifically, for example, when the user blinks briefly, the update of the display image DIM may include enlarging the display image (see FIGS. 8A and 8B ) and selecting an icon (see FIG. 8C ). When the user blinks long, the update may include opening a menu screen, for example.

[0139] After the operation of step S72, the operation of the flowchart in FIG. 9 ends.

[0140] As described above, by performing the operations of the flowchart in Figure 9, the display image DIM displayed on the display device DSP can be updated not only according to the position of the user's gaze, but also according to the user's blinking.

[0141] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0142] Second Embodiment In this embodiment, an arithmetic circuit for performing calculations for the artificial neural network model described in the above embodiment will be described.

[0143] 10 has a function of performing a sum-of-products operation between a plurality of first data and a plurality of second data, and a function of performing a function operation using the result of the sum-of-products operation as an input value. The arithmetic circuit 2000 is, as an example, a semiconductor device having an array unit ALP, a circuit ILD, a circuit WLD, a circuit XLD, and a circuit AFP.

[0144] Note that the entire arithmetic circuit 2000, or a part thereof, may be used for purposes other than artificial neural networks. For example, the entire arithmetic circuit 2000, or a part thereof, may be used for graphics calculations (such as convolution processing for extracting image features) and for multiply-and-accumulate or matrix calculations in scientific calculations. In other words, the entire arithmetic circuit 2000, or a part thereof, may be used for general calculations, not just calculations for artificial neural networks.

[0145] For example, the circuit ILD is electrically connected to wirings OL[1] to OL[n] and wirings OLB[1] to OLB[n]. For example, the circuit WLD is electrically connected to wirings WL[1] to WL[m] and wirings WX1L[1] to WX1L[m]. For example, the circuit XLD is electrically connected to wirings WX1L[1] to WX1L[m] and wirings X2L[1] to X2L[m]. For example, the circuit AFP is electrically connected to wirings OL[1] to OL[n] and wirings OLB[1] to OLB[n].

[0146] <<Array Unit ALP>> The array unit ALP has, as an example, m x n circuits MP. As an example, the circuits MP are arranged in a matrix of m rows and n columns within the array unit ALP. Note that in Fig. 10, the circuit MP located in the i-th row and j-th column (where i is an integer greater than or equal to 1 and less than or equal to m, and j is an integer greater than or equal to 1 and less than or equal to n) is represented as circuit MP[i,j]. However, in Fig. 10, only circuit MP[1,1], circuit MP[m,1], circuit MP[i,j], circuit MP[1,n], and circuit MP[m,n] are illustrated, and the other circuits MP are not illustrated.

[0147] As an example, the circuit MP[i, j] is electrically connected to a wiring WL[i], a wiring WX1L[i], a wiring X2L[i], a wiring OL[j], and a wiring OLB[j].

[0148] For example, the circuit MP[i,j] has a function of holding first data (in the case of an artificial neural network operation, the first data can be referred to as a weighting coefficient). Specifically, the circuit MP[i,j] holds information (e.g., a potential, a resistance value, or a current value) corresponding to the first data input from the circuit ILD via the wiring OL[j] and the wiring OLB[j]. The circuit MP[i,j] also has a function of outputting the product of second data (in the case of an artificial neural network operation, the second data can be referred to as an input signal, input data, etc.) and the first data. As a specific example, the circuit MP[i,j] receives the second data from the circuit XLD via the wiring WX1L[i] and the wiring X2L[i], and outputs information (e.g., a current value or a potential) corresponding to the product of the first data and the second data to the wiring OL[j] and the wiring OLB[j].

[0149] <<Circuit ILD>> For example, the circuit ILD has a function of inputting information corresponding to a plurality of first data (e.g., a potential, a resistance value, or a current value) to each of the circuits MP[1,1] to MP[m,n] via the wirings OL[1] to OL[n] and the wirings OLB[1] to OLB[n].

[0150] <<Circuit XLD>> As an example, the circuit XLD has a function of supplying information corresponding to the second data (for example, a potential or a current value) to each of the circuits MP[1,1] to MP[m,n] via the wirings WX1L[1] to WX1L[n] and the wirings X2L[1] to X2L[m].

[0151] <<Circuit WLD>> For example, the circuit WLD has a function of selecting a circuit MP to which information (e.g., a potential, a resistance value, or a current value) corresponding to first data input from the circuit ILD is to be written. For example, when writing information (e.g., a potential, a resistance value, or a current value) to the circuits MP[i,1] to MP[i,n] located in the i-th row of the array portion ALP, the circuit WLD may supply a signal to the wiring WX1L[i] for turning on or off the write switching elements included in the circuits MP[i,1] to MP[i,n], and may supply a potential to the wiring WX1L for turning off the write switching elements included in the circuits MP other than the i-th row.

[0152] <<Circuit AFP>> The circuit AFP includes, for example, circuits ACTF[1] to ACTF[n]. For example, the circuit ACTF[1] is electrically connected to the wiring OL[1], the wiring OLB[1], and the wiring ZL[1]. For example, the circuit ACTF[j] is electrically connected to the wiring OL[j], the wiring OLB[j], and the wiring ZL[j]. For example, the circuit ACTF[n] is electrically connected to the wiring OL[n], the wiring OLB[n], and the wiring ZL[n].

[0153] For example, the circuit ACTF[j] generates a signal according to information (e.g., potential, current value, etc.) input from the wiring OL[j] and the wiring OLB[j] and outputs the signal to the wiring ZL[j]. For example, the circuit ACTF[j] compares information (e.g., potential, current value, etc.) input from the wiring OL[j] and the wiring OLB[j], generates a signal according to the comparison result, and outputs the signal to the wiring ZL[j]. In the arithmetic circuit 2000, the circuit ACTF[j] outputs a result of multiplication and accumulation of a plurality of first data and a plurality of second data calculated in each of the circuits MP[1,j] to MP[m,j]. Furthermore, for example, the circuits ACTF[1] to ACTF[n] may also have a function of performing a function calculation using the result of the multiplication and accumulation as an input value.

[0154] <<Circuit MP>> Next, an example of a circuit configuration applicable to the circuit MP included in the arithmetic circuit 2000 of Fig. 10 will be described. The circuit MP shown in Fig. 11 is an example of the configuration of the circuit MP shown in Fig. 10, and the circuit MC included in the circuit MP of Fig. 11 includes, for example, transistors M1 to M4 and a capacitor C1. Note that, for example, a circuit HC is configured by a transistor M2 and a capacitor C1.

[0155] 11, the circuit MCr has a circuit configuration similar to that of the circuit MC, and therefore, the circuit elements of the circuit MCr are designated by the letter "r" to distinguish them from the circuit elements of the circuit MC.

[0156] The transistors M1 to M4 shown in FIG. 11 are, for example, n-channel transistors with a multi-gate structure having gates above and below the channel, and each of the transistors M1 to M4 has a first gate and a second gate. However, for convenience, the present specification and the like distinguishes between the first gate (sometimes referred to as a front gate) and the second gate (sometimes referred to as a back gate), but the first gate and the second gate can be interchanged. Therefore, the term "gate" can be interchanged with the term "back gate" in this specification and the like. Similarly, the term "back gate" can be interchanged with the term "gate." Specifically, a connection configuration in which "the gate is electrically connected to a first wiring, and the back gate is electrically connected to a second wiring" can be replaced with a connection configuration in which "the back gate is electrically connected to the first wiring, and the gate is electrically connected to the second wiring." For example, as shown in FIG. 11, the back gate of the transistor M1 may be electrically connected to the first terminal of the capacitor C1 and the first terminal of the transistor M2.

[0157] Furthermore, the arithmetic circuit of the display device of one embodiment of the present invention does not depend on the connection configuration of the back gate of a transistor. The back gates of the transistors M1 to M4 in FIG. 11 are illustrated, but the connection configuration of the back gates is not illustrated. However, the electrical connection destination of the back gate can be determined at the design stage. For example, in a transistor having a back gate, the gate and the back gate may be electrically connected to increase the on-state current of the transistor. That is, for example, the gate and the back gate of the transistor M2 may be electrically connected. Furthermore, in a transistor having a back gate, for example, in order to change the threshold voltage of the transistor or reduce the off-state current of the transistor, for example, a wiring electrically connected to an external circuit may be provided, and a fixed or variable potential may be applied to the back gate of the transistor by the external circuit. Note that this applies not only to FIG. 11 but also to transistors described elsewhere in the specification or transistors illustrated in other drawings.

[0158] Furthermore, the arithmetic circuit of the display device of one embodiment of the present invention does not depend on the structure of the transistors included in the semiconductor device. For example, the transistors M1 to M4 illustrated in FIG. 11 may have a structure without a back gate, that is, a single-gate structure. Some of the transistors may have a back gate, and other transistors may have no back gate. This also applies to transistors described elsewhere in this specification or illustrated in other drawings, as well as the circuit diagram illustrated in FIG. 11.

[0159] In the arithmetic circuit of the display device of one embodiment of the present invention, the sizes, for example, the channel length and the channel width, of the transistors M1, M2, M3, and M4 are preferably equal to those of the transistors M1r, M2r, M3r, and M4r, respectively. With such a circuit configuration, the arithmetic circuit 2000 can be efficiently laid out.

[0160] Furthermore, it is preferable that the transistors M3 and M4 (transistors M3r and M4r) have the same size. By configuring the circuit in this way, the electrical characteristics of the transistors M3 and M4 can be made approximately equal, thereby improving the calculation accuracy of the calculation circuit 2000.

[0161] Furthermore, in this specification and the like, transistors with various structures can be used as transistors. Therefore, the type of transistor used is not limited. Examples of transistors include transistors having single crystal silicon, and transistors having non-single crystal semiconductor films typified by amorphous silicon, polycrystalline silicon, low-temperature polycrystalline silicon (LTPS), and microcrystalline (also referred to as microcrystal, nanocrystal, or semi-amorphous) silicon. Alternatively, thin film transistors (TFTs) formed by thinning such semiconductors can be used. The use of TFTs offers various advantages. For example, TFTs can be manufactured at lower temperatures than single crystal silicon, thereby reducing manufacturing costs and increasing the size of the manufacturing equipment. The use of large manufacturing equipment allows for manufacturing on large substrates. Therefore, a large number of display devices can be manufactured simultaneously, resulting in low manufacturing costs. Alternatively, the low manufacturing temperature allows for the use of substrates with poor heat resistance. Therefore, transistors can be manufactured on light-transmitting substrates. Alternatively, light transmission through a display element can be controlled using transistors on light-transmitting substrates. Alternatively, the thin film thickness of the transistor allows light to pass through a portion of the film forming the transistor. Therefore, the aperture ratio can be improved.

[0162] Examples of transistors include transistors containing compound semiconductors (e.g., silicon germanium and gallium arsenide) or oxide semiconductors (e.g., Zn—O, In—Ga—Zn—O, In—Zn—O, In—Sn—O (ITO), Sn—O, Ti—O, Al—Zn—Sn—O (AZTO), and In—Sn—Zn—O). Alternatively, thin film transistors formed by thinning these compound semiconductors or these oxide semiconductors can be used. This allows the manufacturing temperature to be lowered, making it possible to manufacture transistors at room temperature, for example. As a result, transistors can be formed directly on substrates with low heat resistance, such as plastic substrates or film substrates. These compound semiconductors or oxide semiconductors can be used not only for the channel portion of transistors but also for other applications. For example, these compound semiconductors or oxide semiconductors can be used as wiring, resistors, pixel electrodes, or light-transmitting electrodes. These can be deposited or formed simultaneously with transistors, thereby reducing costs.

[0163] As an example of a transistor, a transistor formed by an inkjet method or a printing method can be used. These methods allow manufacturing at room temperature, in a low vacuum, or on a large substrate. Therefore, manufacturing can be performed without using a mask (reticle), and the layout of the transistor can be easily changed. Furthermore, manufacturing can be performed without using a resist, which reduces material costs and the number of processes. Furthermore, since a film can be applied only to a necessary portion, material waste is reduced and costs can be reduced compared to a manufacturing method in which a film is formed on the entire surface and then etched.

[0164] As an example of a transistor, a transistor having an organic semiconductor and a carbon nanotube can be used. This allows a transistor to be formed on a flexible substrate. A device using a transistor having an organic semiconductor and a carbon nanotube can be made resistant to impacts.

[0165] It should be noted that various other structures of transistors can be used as the transistors. For example, MOS transistors, junction transistors, or bipolar transistors can be used as the transistors. By using MOS transistors as the transistors, the size of the transistors can be reduced. Therefore, a large number of transistors can be mounted. By using bipolar transistors as the transistors, a large current can be passed through them. Therefore, the circuit can operate at high speed. It should be noted that MOS transistors and bipolar transistors may be mixed and formed on a single substrate. This can achieve one or more of low power consumption, miniaturization, and high-speed operation.

[0166] As an example of a transistor, a transistor having a structure in which gate electrodes are arranged above and below an active layer can be applied. By adopting a structure in which gate electrodes are arranged above and below an active layer, a circuit configuration in which multiple transistors are connected in parallel is achieved. This increases the channel formation region, thereby enabling an increase in the current value. Alternatively, by adopting a structure in which gate electrodes are arranged above and below an active layer, a depletion layer is more easily formed, thereby enabling an improvement in the S value.

[0167] Examples of the transistor include a transistor having a structure in which a gate electrode is disposed above an active layer, a structure in which a gate electrode is disposed below an active layer, a staggered structure, an inverted staggered structure, a structure in which a channel region is divided into multiple regions, a structure in which active layers are connected in parallel, or a structure in which active layers are connected in series. Alternatively, the transistor may have various configurations, such as a planar type, a FIN type, a TRI-GATE type, a top-gate type, a bottom-gate type, and a double-gate type (gates are disposed above and below the channel).

[0168] As an example of a transistor, a transistor having a structure in which a source electrode or a drain electrode overlaps with an active layer (or a part thereof) can be used. By using a structure in which a source electrode or a drain electrode overlaps with an active layer (or a part thereof), it is possible to prevent unstable operation due to charge accumulation in a part of the active layer.

[0169] As an example of the transistor, a structure provided with an LDD (Lightly Doped Drain) region can be applied. By providing the LDD region, it is possible to reduce the off-state current or improve the breakdown voltage (reliability) of the transistor. Alternatively, by providing the LDD region, even if the voltage between the drain and source changes when operating in the saturation region, the drain current does not change much, and a voltage-current characteristic with a flat slope can be obtained.

[0170] For example, in this specification and the like, transistors can be formed using various substrates. The type of substrate is not limited to a specific one. Examples of the substrate include a semiconductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI (Silicon-On-Insulator) substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a laminated film, paper containing a fibrous material, and a base film. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, or soda-lime glass. Examples of flexible substrates, laminated films, base films, and the like include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Another example is a synthetic resin such as acrylic. Other examples include polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride. Other examples include polyamide, polyimide, aramid, epoxy resin, inorganic vapor-deposited film, and paper. In particular, by manufacturing transistors using a semiconductor substrate, a single-crystal substrate, or an SOI substrate, it is possible to manufacture transistors with small size, high current capability, and little variation in characteristics, size, or shape. Constructing a circuit using such transistors can reduce the power consumption of the circuit or increase the circuit integration.

[0171] Alternatively, a flexible substrate may be used as the substrate, and the transistor may be formed directly on the flexible substrate. Alternatively, a peeling layer may be provided between the substrate and the transistor. The peeling layer can be used to separate a semiconductor device, after a part or all of the semiconductor device is completed thereon, from the substrate and transfer it to another substrate. In this case, the transistor can be transferred to a substrate with poor heat resistance or a flexible substrate. Note that the peeling layer may have, for example, a laminated structure of inorganic films such as a tungsten film and a silicon oxide film, or a structure in which an organic resin film such as polyimide is formed on a substrate.

[0172] That is, a transistor may be formed on a certain substrate, and then the transistor may be transferred to another substrate, and the transistor may be disposed on the other substrate. Examples of substrates onto which transistors may be transferred include, in addition to the substrates on which the above-described transistors can be formed, paper substrates, cellophane substrates, aramid film substrates, polyimide film substrates, stone substrates, wood substrates, cloth substrates (e.g., natural fibers (e.g., silk, cotton, and hemp), synthetic fibers (e.g., nylon, polyurethane, and polyester), or recycled fibers (e.g., acetate, cupra, rayon, and recycled polyester)), leather substrates, and rubber substrates. The use of these substrates allows for the formation of transistors with good characteristics, the formation of transistors with low power consumption, the manufacture of durable devices, the provision of heat resistance, and the reduction of weight and thickness.

[0173] All of the circuits required to achieve a given function can be formed on the same substrate (e.g., glass substrate, plastic substrate, single crystal substrate, or SOI substrate), which can reduce costs by reducing the number of components, or improve reliability by reducing the number of connections to circuit components.

[0174] It is possible that not all of the circuits necessary to realize a predetermined function are formed on the same substrate. That is, a portion of the circuits necessary to realize a predetermined function may be formed on one substrate, and another portion of the circuits necessary to realize the predetermined function may be formed on another substrate. For example, a portion of the circuits necessary to realize a predetermined function may be formed on a glass substrate, and another portion of the circuits necessary to realize the predetermined function may be formed on a single-crystal substrate (or an SOI substrate). Then, a single-crystal substrate (also called an IC chip) on which another portion of the circuits necessary to realize the predetermined function is formed may be connected to the glass substrate by COG (chip-on-glass) and the IC chip may be disposed on the glass substrate. Alternatively, the IC chip may be connected to the glass substrate using TAB (tape automated bonding), COF (chip-on-film), SMT (surface mount technology), a printed circuit board, or the like. In this way, by forming part of the circuit on the same substrate as the pixel section, it is possible to reduce costs by reducing the number of components, or to improve reliability by reducing the number of connections with circuit components. In particular, circuits with high drive voltages or high drive frequencies often consume large amounts of power. Therefore, such circuits are formed on a substrate (e.g., a single-crystal substrate) separate from the pixel section to form an IC chip. Using this IC chip can prevent an increase in power consumption.

[0175] In the circuit MP of FIG. 11 , a first terminal of the transistor M1 is electrically connected to a wiring VE. A second terminal of the transistor M1 is electrically connected to a first terminal of the transistor M3 and a first terminal of the transistor M4. A gate of the transistor M1 is electrically connected to a first terminal of the capacitor C1 and a first terminal of the transistor M2. A second terminal of the capacitor C1 is electrically connected to a wiring VE. A second terminal of the transistor M2 is electrically connected to a wiring OL. A gate of the transistor M2 is electrically connected to a wiring WL. A second terminal of the transistor M3 is electrically connected to the wiring OL, and a gate of the transistor M3 is electrically connected to a wiring WX1L. A second terminal of the transistor M4 is electrically connected to a wiring OLB, and a gate of the transistor M4 is electrically connected to a wiring X2L.

[0176] The circuit MCr has a different connection configuration from the circuit MC. The second terminal of the transistor M3r is electrically connected to the wiring OLB instead of the wiring OL, and the second terminal of the transistor M4r is electrically connected to the wiring OL instead of the wiring OLB. The first terminal of the transistor M1r and the first terminal of the capacitor C1r are electrically connected to the wiring VEr.

[0177] The wiring VE and wiring VEr function as wirings for supplying a constant voltage, for example.

[0178] The first terminal of the transistor M1 may be electrically connected to a wiring that supplies a different constant voltage instead of the wiring VE. Similarly, the first terminal of the transistor M1r may be electrically connected to a wiring that supplies a different constant voltage instead of the wiring VEr.

[0179] In the circuit HC shown in FIG. 11, the electrical connection point between the gate of the transistor M1, the first terminal of the capacitor C1, and the first terminal of the transistor M2 is defined as a node n1.

[0180] As an example, the circuit HC has a function of holding a potential corresponding to the first data. The potential is held in the circuit HC included in the circuit MC of FIG. 11 by inputting a potential from the wiring OL and writing it to the capacitor C1 when the transistors M2 and M3 are turned on, and then turning off the transistor M2. This allows the potential of the node n1 to be held as a potential corresponding to the first data. At this time, a current is input from the wiring OL, and a potential corresponding to the magnitude of the current can be held in the capacitor C1. This reduces the influence of variations in the current characteristics of the transistor M1.

[0181] In addition, since the transistor M1 holds the potential of the node n1 for a long time, it is preferable to use a transistor with low off-state current. For example, an OS transistor can be used as the transistor M1. Alternatively, a transistor with a back gate may be used as the transistor M1, and a low-level potential may be applied to the back gate to shift the threshold voltage to the positive side, thereby reducing the off-state current.

[0182] The configuration of the circuit MP in Fig. 11 can be changed depending on the situation. For example, the transistors M1, M1r, M2, M2r, M3, M3r, M4, and M4r in the circuit MP in Fig. 11 may each be replaced with a p-channel transistor. As an example, each of the above-mentioned transistors may be a p-channel transistor having an SOI structure.

[0183] <Example of Operation of Arithmetic Circuit> Next, an example of operation of the arithmetic circuit 2000 in FIG. 10 including the circuit MP in FIG. 11 will be described.

[0184] In this operation example, the constant voltage applied by the wirings VE and VEr is set to the ground potential. Therefore, when the wirings OL and OLB are at a potential higher than the ground potential, the current flowing through the wiring OL flows to the wiring VE via the circuit MC or to the wiring VEr via the circuit MCr. Furthermore, the current flowing through the wiring OLB flows to the wiring VEr via the circuit MCr or to the wiring VE via the circuit MC.

[0185] <<Writing First Data to Circuit MP>> Writing first data to the circuit MP will be described.

[0186] First, the circuit WLD selects the circuit MP to which the first data is written. Specifically, when the circuit MP arranged in the i-th row of the array unit ALP is selected, the circuit WLD applies a high-level potential to the wiring WL[i] and the wiring WX1L[i]. This turns on the transistors M2, M3, M2r, and M3r included in the circuit MP arranged in the i-th row of the array unit ALP. Meanwhile, the circuit WLD applies a low-level potential to the wiring WL and the wiring WX1L of rows other than the i-th row of the array unit ALP, turning off the transistors M2, M3, M2r, and M3r included in the circuit MP arranged in the other rows of the array unit ALP.

[0187] Next, the circuit ILD outputs current corresponding to the first data written to the circuits MP[i,1] to MP[i,n] arranged in each column to the wirings OL[1] to OL[n] and the wirings OLB[1] to OLB[n].

[0188] Here, the amount of current flowing through the wiring OL[j] and the wiring OLB[j] according to the first data is defined as follows.

[0189] When the first data written to the circuit MP[i,j] is “1”, the circuit ILD writes I ｕｔWhen the first data written to the circuit MP[i,j] is “2”, the circuit ILD passes a current of 2×I to the wiring OL[j] and passes a current of 0 to the wiring OLB[j]. ｕｔ In other words, when the first data written to the circuit MP[i,j] is “a” (a is a positive real number), the circuit ILD supplies a current of a×I to the wiring OL[j]. ｕｔ A current of 0 flows through the wiring OLB[j] and a current of 1 flows through the wiring OLB[j].

[0190] When the first data written to the circuit MP[i,j] is “−1”, the circuit ILD causes a current of 0 to flow through the wiring OL[j] and a current of I to flow through the wiring OLB[j]. ｕｔ When the first data written to the circuit MP[i,j] is "-2", the circuit ILD passes a current of 0 to the wiring OL[j] and 2×I to the wiring OLB[j]. ｕｔ That is, when the first data written to the circuit MP[i,j] is “−a”, the circuit ILD passes a current of 0 to the wiring OL[j] and a current of a×I to the wiring OLB[j]. ｕｔ A current of this magnitude is passed through the

[0191] Furthermore, when the first data written to the circuit MP[i,j] is "0", the circuit ILD causes a current of 0 to flow through the wiring OL[j] and also causes a current of 0 to flow through the wiring OLB[j].

[0192] In this specification, the expression "zero current flows" means "no current flows through the wiring or circuit."

[0193] As described above, when first data is written to the circuit MP[i, j], one of the two amounts of current corresponding to the first data flows from the wiring OL to the circuit MC included in the circuit MP[i, j], and the other of the two amounts of current corresponding to the first data flows from the wiring OLB to the circuit MCr included in the circuit MP[i, j]. Here, one of the two amounts of current corresponding to the first data flows from the wiring OL to the circuit MC included in the circuit MP[i, j] as I ｉｎ[i, j], and the other of the two current amounts according to the first data is supplied from the wiring OLB to the circuit MCr included in the circuit MP[i, j]. ｉｎＢ Let [i, j].

[0194] In the circuit MP[i, j], the gate and the second terminal of the transistor M1 are electrically connected to the circuit MC. Since the wiring VE is supplied with a ground potential, the potential of the node n1 is increased when the amount of current flowing between the source and drain of the transistor M1 is I. ｉｎ [i, j]. Similarly, in the circuit MCr, the gate and second terminal of the transistor M1r are in a conductive state. Furthermore, since the wiring VEr is applied with a ground potential, the potential of the node n1r is such that the amount of current flowing between the source and drain of the transistor M1r is I ｉｎＢ This is the potential that satisfies the gate-source voltage [i, j].

[0195] Here, the circuit WLD sets the potential applied to the wiring WL[i] and the wiring WX1L[i] to a low level potential, thereby turning off the transistors M2, M3, M2r, and M3r included in the circuit MP arranged in the i-th row of the array unit ALP. As a result, in the circuit MP[i, j], the circuit HC included in the circuit MC reduces the amount of current flowing between the source and drain of the transistor M1 to I ｉｎ [i, j] is maintained, and the amount of current flowing between the source and drain of the transistor M1r at the node n1r is I ｉｎＢ A potential that satisfies the gate-source voltage [i, j] is maintained.

[0196] By the above operation, the first data can be written to the circuit MP[i, j].

[0197] <<Input of Second Data to Array Unit ALP>> Next, input of second data to the array unit ALP will be described.

[0198] After the first data is written to each of the circuits MP included in the array part ALP, the circuit XLD applies a set of potentials according to the second data to each of the wiring WX1L and the wiring X2L.

[0199] Here, a set of potentials corresponding to the second data and applied to the wiring WX1L and the wiring X2L is defined as follows.

[0200] When "1" is input as second data to the circuits MP[i,1] to MP[i,n] arranged in the i-th row of the array portion ALP, the circuit XLD applies a high-level potential to the wiring WX1L[i] and a low-level potential to the wiring X2L[i]. As a result, in the circuit MP[i,j], the transistor M3 of the circuit MC is turned on and the transistor M4 of the circuit MC is turned off. Also, in the circuit MP[i,j], the transistor M3r of the circuit MCr is turned on and the transistor M4r of the circuit MCr is turned off. At this time, the gate-source voltage of the transistor M1 is such that a current I flows between the source and drain of the transistor M1. ｉｎ Since the voltage [i, j] flows, I flows from the wiring OL to the wiring VE via the transistor M3 and the transistor M1. ｉｎ Similarly, the gate-source voltage of the transistor M1r causes a current I to flow between the source and drain of the transistor M1r. ｉｎＢ Since the voltage [i, j] flows, I flows from the wiring OLB to the wiring VEr via the transistor M3r and the transistor M1r. ｉｎＢ A current of the amount [i, j] flows.

[0201] When "-1" is input as second data to the circuits MP[i,1] to MP[i,n] arranged in the i-th row of the array portion ALP, the circuit XLD applies a low-level potential to the wiring WX1L[i] and a high-level potential to the wiring X2L[i]. As a result, in the circuit MP[i,j], the transistor M3 of the circuit MC is turned off and the transistor M4 of the circuit MC is turned on. Also, in the circuit MP[i,j], the transistor M3r of the circuit MCr is turned off and the transistor M4r of the circuit MCr is turned on. At this time, the gate-source voltage of the transistor M1 is such that a current I flows between the source and drain of the transistor M1. ｉｎ Since the voltage [i, j] flows, I flows from the wiring OLB to the wiring VE via the transistor M4 and the transistor M1. ｉｎ Similarly, the gate-source voltage of the transistor M1r causes a current I to flow between the source and drain of the transistor M1r. ｉｎＢ Since the voltage [i, j] flows, I flows from the wiring OL to the wiring VEr via the transistor M4r and the transistor M1r. ｉｎＢ A current of the amount [i, j] flows.

[0202] When "0" is input as second data to the circuits MP[i,1] to MP[i,n] arranged in the i-th row of the array portion ALP, the circuit XLD applies a low-level potential to the wiring WX1L[i] and also applies a low-level potential to the wiring X2L[i]. As a result, in the circuit MP[i,j], the transistors M3 and M4 of the circuit MC are turned off. Also, in the circuit MP[i,j], the transistors M3r and M4r of the circuit MCr are turned off. At this time, the wirings OL and OLB are not electrically connected to the wiring VE through the circuit MC, so that no current flows from the wirings OL and OLB to the circuit MC. Similarly, the wirings OL and OLB are not electrically connected to the wiring VEr through the circuit MCr, so that no current flows from the wirings OL and OLB to the circuit MCr.

[0203] To summarize the above, when second data is input to the circuit MP[i,j] that holds the first data, the amount of current output from the circuit MP[i,j] to each of the wiring OL and the wiring OLB is as shown in Table 1.

[0204]

[0205] That is, when the product of the first data and the second data is "2", 2×I is supplied from the wiring OL to either the circuit MC or the circuit MCr. ｕｔ When the product of the first data and the second data is "1", a current of I flows from the wiring OL to either the circuit MC or the circuit MCr. ｕｔ When the product of the first data and the second data is "-1", a current of I flows from the wiring OLB to one of the circuit MC and the circuit MCr. ｕｔ When the product of the first data and the second data is "-2", a current of 2×I flows from the wiring OLB to either the circuit MC or the circuit MCr. ｕｔ When the product of the first data and the second data is "0", no current flows from the wiring OL and wiring OLB to the circuit MC and the circuit MCr.

[0206] Here, consider inputting second data corresponding to each column to circuits MP[1,1] to MP[m,n] arranged in the first to m-th rows of the array unit ALP. In this case, for example, by applying a potential to wiring OL[j] that is higher than the potentials (ground potential) applied by wiring VE and wiring VEr, the amount of current flowing through wiring OL[j] becomes the sum of currents flowing through circuits MP[1,j] to MP[m,j] where the product of the first data and the second data is positive. Similarly, for example, by applying a potential to wiring OLB[j] that is higher than the potentials (ground potential) applied by wiring VE and wiring VEr, the amount of current flowing through wiring OLB[j] becomes the sum of currents flowing through circuits MP[1,j] to MP[m,j] where the product of the first data and the second data is negative.

[0207] <<Operation in Circuit AFP>> A circuit ACTF[j] included in the circuit AFP generates a potential corresponding to a difference in the amount of current flowing from the circuit ACTF[j] to the wiring OL[j] and the wiring OLB[j]. Note that the difference in the amount of current corresponds to a result of a multiply-and-accumulate operation on a plurality of first data and a plurality of second data in the circuits MP[1,j] to MP[m,j] in the j-th column of the array portion ALP. This allows the circuit ACTF[j] to output the result of the multiply-and-accumulate operation as a potential to the wiring ZL[j].

[0208] In addition, at this time, the circuit ACTF[j] may perform a function operation using the result of the product-sum operation as an input value and output the result of the function operation to the wiring ZL[j]. In particular, when the operation of an artificial neural network model is performed using the operation circuit 2000, the function operation may be an activation function operation. As the activation function, for example, a step function, a ramp function (ReLU function), a sigmoid function, a tanh function, or a softmax function may be used.

[0209] The calculation circuit 2000 can be used to perform calculations on an artificial neural network model, thereby enabling image analysis to be performed on images captured by the electronic device of the above-described embodiment.

[0210] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0211] Embodiment 3 In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described.

[0212] 12 is a cross-sectional view schematically illustrating a display device according to one embodiment of the present invention. The display device DSP includes a pixel layer PXAL, a wiring layer LINL, and a circuit layer SICL.

[0213] The wiring layer LINL is provided on the circuit layer SICL, and the pixel layer PXAL is provided on the wiring layer LINL.

[0214] The circuit layer SICL has a substrate BS, a drive circuit region DRV, and a functional circuit region MFNC.

[0215] The substrate BS can be, for example, a semiconductor substrate (e.g., a single-crystal substrate) made of silicon or germanium. In addition to semiconductor substrates, other materials that can be used for the substrate BS include, for example, an SOI (Silicon-On-Insulator) substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a laminated film, paper containing a fibrous material, and a base film. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, and base films include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Another example is a synthetic resin such as an acrylic resin. Other examples include polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride. Other examples include polyamide, polyimide, aramid, epoxy resin, inorganic vapor deposition film, and paper. If the manufacturing process of the display device DSP includes heat treatment, it is preferable to select a material with high heat resistance for the substrate BS.

[0216] For example, when the substrate BS is a semiconductor substrate made of silicon, the transistors included in the driver circuit region DRV and the functional circuit region MFNC can be Si transistors.

[0217] Further, for example, when the substrate BS is a glass substrate, the transistors included in the driver circuit region DRV and the functional circuit region MFNC can be OS transistors.

[0218] The drive circuit region DRV and the functional circuit region MFNC are provided on a substrate BS.

[0219] The drive circuit region DRV has, as an example, a drive circuit for driving a display pixel circuit included in a pixel layer PXAL, which will be described later. Note that a specific configuration example of the drive circuit region DRV will be described later.

[0220] The functional circuit region MFNC may include, for example, a GPU (Graphics Processing Unit). Furthermore, if the display device DSP includes a touch panel, the functional circuit region MFNC may include a sensor controller that controls a touch sensor included in the touch panel. Furthermore, if a light-emitting device using an organic EL material is used as a display element of the display device DSP, the functional circuit region MFNC may include an EL correction circuit. Furthermore, if a liquid crystal element is used as a display element of the display device DSP, the functional circuit region MFNC may include a gamma correction circuit.

[0221] The wiring layer LINL is provided with wiring, for example. The wiring included in the wiring layer LINL functions as wiring that electrically connects, for example, a drive circuit included in a drive circuit region DRV provided below and a circuit included in a pixel layer PXAL provided above.

[0222] The pixel layer PXAL has, for example, a plurality of display pixel circuits, which may be arranged in a matrix in the pixel layer PXAL.

[0223] Each of the plurality of display pixel circuits can express one or more colors. In particular, the plurality of colors can be, for example, three colors: red (R), green (G), and blue (B). Alternatively, the plurality of display pixel circuits can express four or more colors by adding one or more colors selected from cyan, magenta, yellow, and white to the above-mentioned three colors: red (R), green (G), and blue (B). Each of the display pixel circuits expressing different colors is referred to as a subpixel, and when white is expressed by multiple subpixels of different colors, the multiple subpixels may be collectively referred to as a pixel. For convenience, in this specification and other descriptions, a subpixel will be referred to as a pixel.

[0224] Fig. 13 is a block diagram showing an example of the configuration of the display device DSP shown in Fig. 12. The display device DSP shown in Fig. 13 has, as an example, a display unit DIS and a circuit unit SIC. Also, although Fig. 13 shows a sensor PDA, the sensor PDA may be disposed inside the display unit DIS or outside the display device DSP.

[0225] In FIG. 13, the wiring lines indicated by thick solid lines are multiple wiring lines or bus wiring lines.

[0226] In FIG. 13 , the display unit DIS includes, for example, a plurality of circuits PX functioning as display pixel circuits and a plurality of circuits PD functioning as imaging pixel circuits, arranged in a matrix. In particular, FIG. 13 illustrates one circuit PX and one circuit PD as one circuit PU. The circuit PX can be, for example, a pixel incorporating at least one of a liquid crystal display device, a light-emitting device including an organic EL material, and a light-emitting device including a light-emitting diode such as a micro LED. In this embodiment, the circuit PX of the display unit DIS is described as incorporating a light-emitting device including an organic EL material. The circuit PU can be the pixel circuit PUa or pixel circuit PUb described in the above embodiment. Circuits applicable to the display unit DIS, circuit PX, etc. will be described in detail in embodiment 4.

[0227] The pixel density (also referred to as "resolution") of the display unit DIS is preferably 100 ppi to 10,000 ppi, and more preferably 1,000 ppi to 10,000 ppi. For example, it may be 2,000 ppi to 6,000 ppi, or 3,000 ppi to 5,000 ppi.

[0228] The aspect ratio of the display unit DIS is not particularly limited, and the display unit DIS can accommodate various aspect ratios, such as 1:1 (square), 4:3, 16:9, and 16:10.

[0229] The diagonal size of the display unit DIS may be 0.1 inches or more and 100 inches or less, and may be 100 inches or more.

[0230] Furthermore, the configuration of the transistors included in the display unit DIS may be appropriately selected depending on the diagonal size of the display unit DIS. For example, when single-crystal silicon transistors are used as the transistors in the display unit DIS, the display unit DIS can be applied to a screen size with a diagonal size of 0.1 inches to 3 inches. When an LTPS transistor (a transistor containing LTPS in a channel formation region) is used as the transistor in the display unit DIS, the display unit DIS can be applied to a screen size with a diagonal size of 0.1 inches to 30 inches, preferably 1 inch to 30 inches. When an LTPO transistor (a combination of an LTPS transistor and an OS transistor) is used in the display unit DIS, the display unit DIS can be applied to a screen size with a diagonal size of 0.1 inches to 50 inches, preferably 1 inch to 50 inches. When an OS transistor is used as the transistor in the display panel, the display panel can be applied to a screen size with a diagonal size of 0.1 inches to 200 inches, preferably 50 inches to 100 inches.

[0231] It is very difficult to increase the size of a single-crystal Si transistor due to the size of a single-crystal Si substrate. Furthermore, since a laser crystallization apparatus is used in the manufacturing process of an LTPS transistor, it is difficult to accommodate large screen sizes (typically, screen sizes exceeding 30 inches in diagonal size). On the other hand, since an OS transistor is not restricted by the use of a laser crystallization apparatus or can be manufactured at a relatively low process temperature (typically, 450° C. or lower), it is possible to accommodate display panels with a relatively large area (typically, a diagonal size of 50 inches to 100 inches). Furthermore, LTPO can be applied to display panel sizes (typically, a diagonal size of 1 inch to 50 inches) that are between those of an LTPS transistor and an OS transistor.

[0232] 13, the circuit unit SIC has a driving circuit region DRV1, a driving circuit region DRV2, and a functional circuit region MFNC. Note that the driving circuit region DRV1 and the driving circuit region DRV2 in FIG. 13 are included in the driving circuit region DRV shown in FIG. 12.

[0233] The drive circuit region DRV1 functions as a peripheral circuit for driving, for example, a plurality of circuits PX included in the display unit DIS. Specifically, the drive circuit region DRV1 includes, for example, a source driver circuit 61, a digital-to-analog conversion circuit 62, a gate driver circuit 63, and a level shifter 64.

[0234] The drive circuit region DRV2 also functions as a peripheral circuit for driving a plurality of circuits PD included in the display unit DIS. Specifically, the drive circuit region DRV2 includes, for example, a sensor row driver circuit 65, a sensor column driver circuit 66, and a buffer memory 67.

[0235] The functional circuit area MFNC may be provided with, for example, a storage device in which image data to be displayed on the display unit DIS is stored, a decoder for restoring encoded image data, a GPU (Graphic Processing Unit) for processing image data, a power supply circuit, a correction circuit, a CPU, etc. In Fig. 13, the functional circuit area MFNC has, as an example, a storage device 71, a GPU (AI accelerator) 72, an EL correction circuit 73, a timing controller 74, a CPU 75, a sensor controller 76, and a power supply circuit 77.

[0236] Furthermore, the display device DSP of FIG. 13 is configured such that, as an example, bus wiring BSL is electrically connected to each of the circuits included in the drive circuit region DRV1, the circuits included in the drive circuit region DRV2, and the circuits included in the functional circuit region MFNC.

[0237] The source driver circuit 61 has a function of transmitting image data to, for example, a circuit PX included in the display unit DIS, and is therefore electrically connected to the circuit PX through a wiring SL.

[0238] The digital-analog conversion circuit 62 has a function of converting image data that has been digitally processed by, for example, a GPU or a correction circuit (to be described later) into analog data. The image data converted into analog data is transmitted to the display unit DIS via the source driver circuit 61. Note that the digital-analog conversion circuit 62 may be included in the source driver circuit 61, or the image data may be transmitted in the following order: source driver circuit 61, digital-analog conversion circuit 62, and display unit DIS.

[0239] The gate driver circuit 63 has a function of selecting a circuit PX to which image data is to be sent in the display unit DIS, for example, and is therefore electrically connected to the circuit PX through a wiring GL.

[0240] The level shifter 64 has a function of converting a signal input to at least one of the source driver circuit 61, the digital-to-analog conversion circuit 62, and the gate driver circuit 63, for example, to an appropriate level.

[0241] The sensor row driver circuit 65 has a function of selecting a circuit PD that performs imaging in the display unit DIS, for example, and is therefore electrically connected to the circuit PD via a wiring TXL.

[0242] The sensor column driver circuit 66 has a function of reading out data captured by the circuit PD in the display unit DIS, for example. Therefore, the sensor column driver circuit 66 may be referred to as a readout circuit. The sensor column driver circuit 66 may also include an amplifier circuit for amplifying data and an analog-to-digital conversion circuit. The sensor column driver circuit 66 is electrically connected to the circuit PD via wiring POL.

[0243] The buffer memory 67 has a function of temporarily storing, for example, image data read from the circuit PD by the sensor column driver circuit 66 .

[0244] The storage device 71 has a function of storing image data to be displayed on the display unit DIS, for example. The storage device 71 can be configured to store image data as digital data or analog data.

[0245] Furthermore, when image data is stored in the storage device 71, it is preferable that the storage device 71 is a nonvolatile memory. In this case, for example, a NAND type memory or the like can be used as the nonvolatile memory.

[0246] Furthermore, when temporary data generated by the GPU 72, the EL correction circuit 73, the CPU 75, etc. is stored in the storage device 71, it is preferable that the storage device 71 be a volatile memory. In this case, for example, an SRAM (Static Random Access Memory), a DRAM (Dynamic Random Access Memory), etc. can be used as the volatile memory.

[0247] The storage device 71 may also be configured to store image data captured by the circuit PD of the display unit DIS.

[0248] The GPU 72 has a function of, for example, performing processing to draw image data read from the storage device 71 on the display unit DIS. In particular, the GPU 72 is configured to perform parallel pipeline processing, so it can process image data to be displayed on the display unit DIS at high speed. The GPU 72 can also function as a decoder to restore encoded images.

[0249] The functional circuit region MFNC may also include a plurality of circuits capable of improving the display quality of the display unit DIS. For example, the circuits may be correction circuits (color adjustment, dimming) that detect color unevenness in an image displayed on the display unit DIS and correct the color unevenness to create an optimal image. Furthermore, if a light-emitting device using an organic EL material is applied to the pixels of the display unit DIS, an EL correction circuit may be provided in the functional circuit region MFNC.

[0250] The EL correction circuit has the function of, for example, appropriately adjusting the amount of current input to a light-emitting device containing an EL material. Because the luminance of a light-emitting device containing an EL material when emitting light is proportional to the current, if the characteristics of the driving transistor electrically connected to the light-emitting device are poor, the luminance of the light emitted by the light-emitting device may be lower than the desired luminance. The EL correction circuit can, for example, monitor the amount of current flowing through the light-emitting device, and when the amount of current is smaller than the desired amount, increase the amount of current flowing through the light-emitting device to increase the luminance of the light emitted by the light-emitting device. Conversely, when the amount of current is larger than the desired amount, the EL correction circuit can decrease the amount of current flowing through the light-emitting device.

[0251] In this embodiment, since the circuit PX of the display unit DIS is described as being applied with a light-emitting device containing an organic EL material, the functional circuit area MFNC includes, as an example, an EL correction circuit 73.

[0252] Furthermore, artificial intelligence may be used for the image correction described above. For example, the current flowing through (or the voltage applied to) the display device provided in the display pixel circuit may be monitored and acquired, the image displayed on the display unit DIS may be acquired by an image sensor or the like, the current (or voltage) and the image may be treated as input data for an artificial intelligence calculation (for example, an artificial neural network), and the output result may be used to determine whether or not to correct the image.

[0253] Furthermore, the calculations of the artificial intelligence can be applied not only to image correction but also to up-conversion processing of image data. As a result, by up-converting low-resolution image data to match the resolution of the display unit DIS, it is possible to display high-quality images on the display unit DIS. Furthermore, the calculations of the artificial intelligence may perform down-conversion processing on the image data instead of up-conversion processing.

[0254] The above-mentioned artificial intelligence calculations can be performed using the GPU 72 included in the functional circuit area MFNC. That is, various correction calculations (color unevenness correction, up-conversion (down-conversion), etc.) can be performed using the GPU 72.

[0255] The GPU 72 may also include a correction circuit 72a for correcting images and a converter 72b for performing up-conversion (down-conversion).

[0256] In addition, Figure 13 shows a configuration in which the correction circuit 72a and the EL correction circuit 73 are electrically connected to the circuit PX via wiring CL in order to correct image data displayed by the circuit PX included in the display unit DIS.

[0257] In this specification, a GPU that performs calculations for artificial intelligence is referred to as an AI accelerator. That is, in this specification, a GPU provided in the functional circuit area MFNC may be described as an AI accelerator.

[0258] The timing controller 74 has a function of varying the frame rate at which images are displayed on the display unit DIS, for example. For example, when a still image is displayed on the display unit DIS, the display device DSP can be driven by the timing controller 74 at a lower frame rate. Also, for example, when a moving image is displayed on the display unit DIS, the display device DSP can be driven by the timing controller 74 at an increased frame rate. In other words, by providing the timing controller 74 in the display device DSP, the frame rate can be changed depending on whether the image is a still image or a moving image. In particular, when a still image is displayed on the display unit DIS, the display device DSP can be operated at a lower frame rate, thereby reducing the power consumption of the display device DSP.

[0259] The CPU 75 has the function of performing general-purpose processing such as, for example, executing an operating system, controlling data, performing various calculations, and executing programs. In the display device DSP, the CPU 75 has the role of issuing commands such as writing or reading image data to or from the storage device 71, correcting image data, and issuing commands to a sensor (described later). Furthermore, for example, the CPU 75 may have the function of transmitting a control signal to one or more circuits selected from the circuits included in the functional circuit area MFNC, such as the storage device, GPU, correction circuit, timing controller, and high-frequency circuit.

[0260] The CPU 75 may also include a circuit (hereinafter referred to as a backup circuit) that temporarily backs up data. The backup circuit preferably can retain the data even if the supply of power supply voltage is stopped. For example, when a still image is displayed on the display unit DIS, the CPU 75 can suspend its function until an image different from the current still image is displayed. Therefore, by temporarily saving data being processed by the CPU 75 to the backup circuit and then stopping the supply of power supply voltage to the CPU 75, the dynamic power consumption of the CPU 75 can be reduced. In this specification, a CPU having a backup circuit is referred to as a NoffCPU (registered trademark).

[0261] The sensor controller 76 has a function of controlling, for example, the sensor PDA. In addition, in Fig. 13, a wiring SNCL is illustrated as a wiring for electrically connecting to the sensor PDA.

[0262] The sensor PDA may be, for example, a touch sensor that may be provided above, below, or inside the display unit DIS.

[0263] Alternatively, the sensor PDA may be, for example, an illuminance sensor. In particular, by acquiring the intensity of external light illuminating the display unit DIS using the illuminance sensor, the brightness (luminance) of the image displayed on the display unit DIS can be changed according to the external light. For example, when the external light is bright, the luminance of the image displayed on the display unit DIS can be increased to improve the visibility of the image. Conversely, when the external light is dark, the luminance of the image displayed on the display unit DIS can be decreased to reduce power consumption.

[0264] Alternatively, the sensor PDA may be, for example, an image sensor, which may acquire an image or the like and display the image on the display unit DIS.

[0265] For example, the power supply circuit 77 has a function of generating voltages to be supplied to circuits included in the drive circuit region DRV, circuits included in the functional circuit region MFNC, display pixel circuits included in the display unit DIS, etc. The power supply circuit 77 may also have a function of selecting the circuits to which the voltage is supplied. For example, the power supply circuit 77 can reduce the power consumption of the entire display device DSP by stopping the voltage supply to the CPU 75, GPU 72, etc. during the period when a still image is displayed on the display unit DIS.

[0266] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0267] In this embodiment, a display device that can be included in an electronic device according to one embodiment of the present invention will be described. Note that the display device described in this embodiment can be applied to the display portion DIS described in the above embodiment.

[0268] <Structure Example of Display Device> Fig. 14 is a cross-sectional view illustrating an example of a display device according to one embodiment of the present invention. As an example, a display device 1000 illustrated in Fig. 14 has a structure in which a pixel circuit, a driver circuit, and the like are provided over a substrate 310. Note that the structure of the display device DSP or the like according to the above-described embodiment can be the structure of the display device 1000 illustrated in Fig. 14. Note that the pixel circuit described in this embodiment can be the display pixel circuit described in the above-described embodiment.

[0269] Specifically, for example, the circuit layer SICL, wiring layer LINL, and pixel layer PXAL shown in the display device DSP can be configured as in the display device 1000 of Fig. 14. The circuit layer SICL has, as an example, a substrate 310, on which a transistor 300 is formed. In addition, a wiring layer LINL is provided above the transistor 300, and the wiring layer LINL is provided with wiring that electrically connects the transistor 300, a transistor 200 described later, a light-emitting device 150a, a light-emitting device 150b described later, and the like. In addition, a pixel layer PXAL is provided above the wiring layer LINL, and the pixel layer PXAL has, as an example, the transistor 200, a light-emitting device 150 (light-emitting device 150a and light-emitting device 150b in Fig. 14), and the like.

[0270] The substrate 310 can be, for example, a semiconductor substrate (e.g., a single-crystal substrate) made of silicon or germanium. Other than a semiconductor substrate, the substrate 310 can also be, for example, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a laminated film, paper containing a fibrous material, or a base film. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, or base films include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Another example is a synthetic resin such as an acrylic resin. Another example is polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Other examples include polyamide, polyimide, aramid, epoxy resin, inorganic vapor deposition film, and paper. If the manufacturing process of the display device 1000 includes a heat treatment, it is preferable to select a material with high heat resistance for the substrate 310.

[0271] In this embodiment, the substrate 310 is described as a semiconductor substrate made of silicon or the like.

[0272] The transistor 300 is provided over a substrate 310 and includes an element isolation layer 312, a conductor 316, an insulator 315, an insulator 317, a semiconductor region 313 formed of part of the substrate 310, and low-resistance regions 314a and 314b functioning as source and drain regions. Therefore, the transistor 300 is a Si transistor. Note that although FIG. 14 illustrates a configuration in which one of the source and drain of the transistor 300 is electrically connected to the conductor 330, the conductor 356, and the conductor 366, which will be described later, via the conductor 328, the electrical connection configuration of the display device of one embodiment of the present invention is not limited thereto. For example, the display device of one embodiment of the present invention may have a configuration in which the gate of the transistor 300 is electrically connected to the conductor 330, the conductor 356, and the conductor 366 via the conductor 328.

[0273] The transistor 300 can be made into a Fin type by, for example, covering the top surface and the side surfaces in the channel width direction of the semiconductor region 313 with a conductor 316 via an insulator 315 that functions as a gate insulating film. By making the transistor 300 into a Fin type, the effective channel width can be increased, and the on-state characteristics of the transistor 300 can be improved. Furthermore, the contribution of the electric field of the gate electrode can be increased, and the off-state characteristics of the transistor 300 can be improved.

[0274] Note that the transistor 300 may be either a p-channel transistor or an n-channel transistor. Alternatively, a plurality of transistors 300 may be provided, and both p-channel and n-channel transistors may be used.

[0275] The region where the channel of the semiconductor region 313 is formed, the region nearby, and the low-resistance region 314a and low-resistance region 314b, which serve as the source or drain region, preferably contain a silicon-based semiconductor, specifically, single-crystal silicon. Alternatively, each of the above-mentioned regions may be formed of a material containing, for example, germanium (Ge), silicon germanium (SiGe), gallium arsenide (GaAs), aluminum gallium arsenide (GaAlAs), or gallium nitride (GaN). Alternatively, the transistor 300 may be configured using silicon whose effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing. Alternatively, the transistor 300 may be a high electron mobility transistor (HEMT) using gallium arsenide and aluminum gallium arsenide.

[0276] The conductor 316, which functions as a gate electrode, can be a semiconductor material such as silicon containing an element that imparts n-type conductivity, such as arsenic or phosphorus, or an element that imparts p-type conductivity, such as boron or aluminum, or can be a conductive material such as a metal material, an alloy material, or a metal oxide material.

[0277] Note that the work function is determined by the material of the conductor, and therefore the threshold voltage of the transistor can be adjusted by selecting the material of the conductor. Specifically, it is preferable to use one or both of titanium nitride and tantalum nitride as the conductor. Furthermore, in order to achieve both conductivity and embeddability, it is preferable to use one or both of tungsten and aluminum as the conductor in a stacked structure, and tungsten is particularly preferable in terms of heat resistance.

[0278] The element isolation layer 312 is provided to isolate a plurality of transistors formed on the substrate 310. The element isolation layer can be formed using, for example, a local oxidation of silicon (LOCOS) method, a shallow trench isolation (STI) method, or a mesa isolation method.

[0279] 14 is just an example, and the structure of the transistor 300 is not limited thereto, and an appropriate transistor may be used depending on the circuit configuration, driving method, etc. For example, the transistor 300 may have a planar structure instead of a fin structure.

[0280] In the transistor 300 shown in FIG. 14, an insulator 320, an insulator 322, an insulator 324, and an insulator 326 are stacked in this order from the substrate 310 side.

[0281] The insulators 320, 322, 324, and 326 can be made of, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, or aluminum nitride.

[0282] The insulator 322 may function as a planarizing film that planarizes steps caused by the insulator 320 and the transistor 300 covered with the insulator 322. For example, the top surface of the insulator 322 may be planarized by planarization treatment using a chemical mechanical polishing (CMP) method to improve the planarity.

[0283] Furthermore, it is preferable that the insulator 324 be a barrier insulating film that prevents impurities such as water and hydrogen from diffusing from the substrate 310 or the transistor 300 to a region above the insulator 324 (for example, a region where the transistor 200, the light-emitting device 150a, the light-emitting device 150b, etc. are provided). Therefore, it is preferable that the insulator 324 be an insulating material that has a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, and water molecules (i.e., the impurities are less likely to permeate). Depending on the situation, the insulator 324 may be made of an insulating material that prevents the diffusion of nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules (for example, N ２ O, NO, and NO ２ It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities such as copper atoms (i.e., the impurities are less likely to permeate), or that has a function of suppressing the diffusion of oxygen (e.g., oxygen atoms and / or oxygen molecules).

[0284] An example of a film having a barrier property against hydrogen is silicon nitride formed by a CVD (Chemical Vapor Deposition) method.

[0285] The amount of desorption of hydrogen can be analyzed using, for example, thermal desorption spectrometry (TDS). For example, in the TDS analysis, the amount of desorption of hydrogen from the insulator 324 is calculated as 10×10 per area of ​​the insulator 324 when the surface temperature of the film is in the range of 50° C. to 500° C. and the amount of desorption converted into hydrogen atoms is 10×10 １５ atoms / cm ２ Below 5 × 10, preferably １５ atoms / cm ２ The following is fine.

[0286] The insulator 326 preferably has a lower dielectric constant than the insulator 324. For example, the relative dielectric constant of the insulator 326 is preferably less than 4, and more preferably less than 3. Furthermore, for example, the relative dielectric constant of the insulator 326 is preferably 0.7 times or less, and more preferably 0.6 times or less, the relative dielectric constant of the insulator 324. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance that occurs between wirings can be reduced.

[0287] Furthermore, conductors 328 and 330 are embedded in the insulators 320, 322, 324, and 326, respectively, to connect to a light-emitting device or the like provided above the insulator 326. The conductors 328 and 330 function as plugs or wiring. Furthermore, for conductors that function as plugs or wiring, the same reference numeral may be used to refer to multiple structures. Furthermore, in this specification and the like, the wiring and the plug connecting to the wiring may be integrated. That is, there are cases where a portion of the conductor functions as wiring, and cases where a portion of the conductor functions as a plug.

[0288] As the material for each plug and wiring (e.g., the conductor 328 and the conductor 330), a conductive material such as a metal material, an alloy material, a metal nitride material, or a metal oxide material can be used in a single layer or a stacked layer. It is preferable to use a high-melting-point material such as tungsten or molybdenum that has both heat resistance and conductivity, and tungsten is preferred. Alternatively, it is preferable to form the plug and wiring from a low-resistance conductive material such as aluminum or copper. Using a low-resistance conductive material can reduce the wiring resistance.

[0289] A wiring layer may be provided over the insulator 326 and the conductor 330. For example, in FIG. 14 , an insulator 350, an insulator 352, and an insulator 354 are stacked in this order over the insulator 326 and the conductor 330. A conductor 356 is formed in the insulator 350, the insulator 352, and the insulator 354. The conductor 356 functions as a plug or wiring connected to the transistor 300. Note that the conductor 356 can be formed using a material similar to that of the conductors 328 and 330.

[0290] Note that, for example, the insulator 350 is preferably an insulator having barrier properties against hydrogen, oxygen, and water, similar to the insulator 324. Similarly to the insulator 326, the insulators 352 and 354 are preferably made of an insulator having a relatively low dielectric constant in order to reduce parasitic capacitance between wirings. The insulators 362 and 364 function as an interlayer insulating film and a planarizing film. The conductor 356 preferably includes a conductor having barrier properties against hydrogen, oxygen, and water.

[0291] Note that, for example, tantalum nitride is preferably used as the conductor having a barrier property against hydrogen. Furthermore, by stacking tantalum nitride and highly conductive tungsten, the diffusion of hydrogen from the transistor 300 can be suppressed while maintaining the conductivity of the wiring. In this case, a structure in which the tantalum nitride layer having a barrier property against hydrogen is in contact with the insulator 350 having a barrier property against hydrogen is preferable.

[0292] In addition, an insulator 360, an insulator 362, and an insulator 364 are stacked in this order on the insulator 354 and the conductor 356.

[0293] The insulator 360 is preferably an insulator having barrier properties against impurities such as water and hydrogen, similar to the insulator 324. Therefore, the insulator 360 can be made of, for example, a material that can be used for the insulator 324.

[0294] The insulators 362 and 364 function as an interlayer insulating film and a planarizing film. As the insulators 362 and 364, it is preferable to use an insulator that has a barrier property against impurities such as water and hydrogen, similar to the insulator 324. Therefore, a material that can be used for the insulator 324 can be used for one or both of the insulators 362 and 364.

[0295] Furthermore, openings are formed in the insulators 360, 362, and 364 in regions that overlap with part of the conductor 356, and the conductor 366 is provided to fill the openings. The conductor 366 is also formed over the insulator 362. For example, the conductor 366 functions as a plug or wiring connected to the transistor 300. Note that the conductor 366 can be formed using a material similar to that of the conductors 328 and 330.

[0296] An insulator 370 and an insulator 372 are stacked in this order on the insulator 364 and the conductor 366 .

[0297] The insulator 370 is preferably an insulator having barrier properties against impurities such as water and hydrogen, similar to the insulator 324. Therefore, the insulator 370 can be made of, for example, a material that can be used for the insulator 324.

[0298] The insulator 372 functions as an interlayer insulating film and a planarizing film. Similarly to the insulator 324, the insulator 372 is preferably an insulator having a barrier property against impurities such as water and hydrogen. For this reason, the insulator 372 can be made of a material that can be used for the insulator 324.

[0299] Furthermore, openings are formed in the insulators 370 and 372 in regions that overlap with a portion of the conductor 366, and the conductor 376 is provided to fill the openings. The conductor 376 is also formed on the insulator 372. After that, the conductor 376 is patterned into a shape such as a wiring, a terminal, or a pad by etching or the like.

[0300] For example, copper, aluminum, tin, zinc, tungsten, silver, platinum, or gold can be used as the conductor 376. Note that the conductor 376 is preferably made of the same components as the material used for the conductor 216 included in the pixel layer PXAL, which will be described later.

[0301] Next, an insulator 380 is formed to cover the insulator 372 and the conductor 376, and then planarization treatment using, for example, chemical mechanical polishing (CMP) is performed until the conductor 376 is exposed. This allows the conductor 376 to be formed on the substrate 310 as a wiring, a terminal, or a pad.

[0302] As the insulator 380, it is preferable to use, for example, a film having barrier properties that prevent the diffusion of impurities such as water and hydrogen, similar to the insulator 324. That is, it is preferable to use, for the insulator 380, a material that can be used for the insulator 324. Alternatively, as the insulator 380, it is possible to use, for example, an insulator with a relatively low dielectric constant in order to reduce parasitic capacitance that occurs between wirings, similar to the insulator 326. That is, it is possible to use, for the insulator 380, a material that can be used for the insulator 326.

[0303] The pixel layer PXAL, for example, includes a substrate 210, a transistor 200, a light-emitting device 150 (light-emitting device 150a and light-emitting device 150b in FIG. 14 ), and a substrate 102. The pixel layer PXAL also includes, for example, an insulator 220, an insulator 222, an insulator 226, an insulator 250, an insulator 111a, an insulator 111b, an insulator 112, an insulator 113, an insulator 162, and a resin layer 163. The pixel layer PXAL also includes, for example, a conductor 216, a conductor 228, a conductor 230, a conductor 121 (conductor 121a and conductor 121b in FIG. 14 ), a conductor 122 (conductor 122a and conductor 122b in FIG. 14 ), and a conductor 123.

[0304] 14, for example, the insulator 202 functions as a bonding layer together with the insulator 380. The insulator 202 is preferably made of the same material as that used for the insulator 380, for example.

[0305] The substrate 210 is provided above the insulator 202. In other words, the insulator 202 is formed on the lower surface of the substrate 210. As the substrate 210, it is preferable to use, for example, a substrate that can be applied to the substrate 310. Note that in the display device 1000 of FIG. 14 , the substrate 310 will be described as a semiconductor substrate made of silicon.

[0306] For example, a transistor 200 is formed on the substrate 210. The transistor 200 functions as a Si transistor because it is formed on the substrate 210, which is a semiconductor substrate made of silicon. Note that the description of the transistor 300 is to be referred to for the configuration of the transistor 200.

[0307] An insulator 220 and an insulator 222 are provided above the transistor 200. The insulator 220 functions as an interlayer insulating film and a planarizing film, similar to the insulator 320. The insulator 222 functions as an interlayer insulating film and a planarizing film, similar to the insulator 322.

[0308] A plurality of openings are provided in the insulator 220 and the insulator 222. The plurality of openings are formed in regions overlapping with the source and drain of the transistor 200 and a region overlapping with the conductor 376. Of the plurality of openings, a conductor 228 is formed in the opening formed in the region overlapping with the source and drain of the transistor 200. Of the remaining openings, an insulator 214 is formed on side surfaces of the opening formed in the region overlapping with the conductor 376, and a conductor 216 is formed in the remaining openings. In particular, the conductor 216 may be called a TSV (Through Silicon Via).

[0309] Furthermore, for the conductor 216 or the conductor 228, for example, a material that can be applied to the conductor 328 can be used. In particular, the conductor 216 is preferably formed from the same material as the conductor 376.

[0310] The insulator 214 has a function of insulating the substrate 210 from the conductor 216. Note that the insulator 214 is preferably made of a material that can be used for the insulator 320 or the insulator 324, for example.

[0311] The insulator 380 and the conductor 376 formed on the substrate 310 and the insulator 202 and the conductor 216 formed on the substrate 210 are joined together by, for example, a bonding process.

[0312] As a pre-process before the bonding process, for example, planarization is performed on the substrate 310 side to make the heights of the surfaces of the insulator 380 and the conductor 376 uniform. Similarly, planarization is performed on the substrate 210 side to make the heights of the insulator 202 and the conductor 216 uniform.

[0313] In the bonding process, when bonding the insulator 380 and the insulator 202, that is, bonding the insulating layers together, a hydrophilic bonding method can be used, in which, for example, after polishing to achieve high flatness, surfaces that have been hydrophilically treated with oxygen plasma are brought into contact with each other to form a temporary bond, and then the final bond is achieved by dehydrating them with heat treatment. The hydrophilic bonding method also produces bonds at the atomic level, resulting in excellent mechanical bonding.

[0314] Furthermore, when bonding conductor 376 and conductor 216, i.e., bonding conductors together, a surface activated bonding method can be used, in which oxide films and impurity adsorption layers on the surfaces are removed by sputtering or other methods, and cleaned and activated surfaces are brought into contact and bonded together. Alternatively, a diffusion bonding method can be used, in which surfaces are bonded together using a combination of temperature and pressure. Both methods involve bonding at the atomic level, resulting in excellent bonding not only electrically but also mechanically.

[0315] By carrying out the above-described bonding process, the conductor 376 on the substrate 310 side can be electrically connected to the conductor 216 on the substrate 210 side. Furthermore, a connection having sufficient mechanical strength can be obtained between the insulator 380 on the substrate 310 side and the insulator 202 on the substrate 210 side.

[0316] When bonding the substrates 310 and 210, since the bonding surfaces of each substrate contain a mixture of insulating and metal layers, a surface activated bonding method and a hydrophilic bonding method may be combined. For example, a bonding method may be used in which the surfaces are polished and then cleaned, and the surface of the metal layer is subjected to an anti-oxidation treatment, followed by a hydrophilic treatment. Alternatively, the surface of the metal layer may be made of a resistant metal such as gold and then subjected to a hydrophilic treatment.

[0317] Note that bonding methods other than those described above may be used to bond the substrate 310 and the substrate 210. For example, flip-chip bonding may be used to bond the substrate 310 and the substrate 210. Furthermore, when using flip-chip bonding, connection terminals such as bumps may be provided above the conductor 376 on the substrate 310 side or below the conductor 216 on the substrate 210 side. Examples of flip-chip bonding include a method in which a resin containing anisotropic conductive particles is injected between the insulator 380 and the insulator 202 and between the conductor 376 and the conductor 216 to bond them, and a method in which silver-tin solder is used to bond them. Alternatively, when the bumps and the conductors connected to the bumps are both made of gold, ultrasonic bonding may be used. Furthermore, in addition to the flip-chip bonding method described above, an underfill agent may be injected between the insulator 380 and the insulator 202 and between the conductor 376 and the conductor 216 to reduce physical stress such as impact and thermal stress. Furthermore, for example, a die bonding film may be used to bond the substrate 310 and the substrate 210 together.

[0318] An insulator 224 and an insulator 226 are stacked in this order on the insulator 222, the insulator 214, the conductor 216, and the conductor 228.

[0319] Like the insulator 324, the insulator 224 is preferably a barrier insulating film that prevents impurities such as water and hydrogen from diffusing into a region above the insulator 224. Therefore, it is preferable to use, for example, a material that can be used for the insulator 324 as the insulator 224.

[0320] The insulator 226 is preferably an interlayer film with a low dielectric constant, similar to the insulator 326. Therefore, the insulator 226 is preferably made of a material that can be used for the insulator 326, for example.

[0321] Furthermore, a conductor 230 electrically connected to the transistor 200, the light-emitting device 150, and the like is embedded in the insulator 224 and the insulator 226. The conductor 230 and the like function as a plug or wiring. For example, a material that can be applied to the conductor 328, the conductor 330, and the like can be used as the conductor 230.

[0322] On the insulators 224 and 226, the insulators 250, 111a, and 111b are stacked in this order.

[0323] The insulator 250 is preferably an insulator having barrier properties against impurities such as water and hydrogen, similar to the insulator 324. Therefore, the insulator 250 can be made of, for example, a material that can be used for the insulator 324.

[0324] The insulators 111a and 111b can be formed using various inorganic insulating films such as an insulating oxide film, an insulating nitride film, an oxynitride insulating film, and an insulating nitride oxide film. The insulator 111a is preferably formed using an insulating oxide film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulator 111b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulator 111a is preferably formed using a silicon oxide film, and the insulator 111b is preferably formed using a silicon nitride film. The insulator 111b preferably functions as an etching protective film. Alternatively, the insulator 111a may be formed using a nitride insulating film or a nitride oxide insulating film, and the insulator 111b may be formed using an oxide insulating film or an oxynitride insulating film. Although this embodiment illustrates an example in which a recess is provided in the insulator 111b, the insulator 111b does not necessarily have to be formed using a recess.

[0325] Furthermore, openings are formed in the insulator 250, the insulator 111a, and the insulator 111b in regions that overlap with a portion of the conductor 230, and the conductor 121 is provided to fill the openings. Note that in this specification and the like, the conductors 121a and 121b shown in FIG. 14 are collectively referred to as the conductors 121. Note that the conductor 121 can be provided using a material similar to that of the conductors 328 and 330.

[0326] In addition, the pixel electrode described in this embodiment mode includes, for example, a material that reflects visible light, and the counter electrode includes a material that transmits visible light.

[0327] The display device 1000 is a top-emission type. Light emitted from the light-emitting device is emitted toward the substrate 102. The substrate 102 is preferably made of a material that is highly transparent to visible light.

[0328] Above the conductor 121, a light emitting device 150a and a light emitting device 150b are provided.

[0329] Here, the light emitting device 150a and the light emitting device 150b will be described.

[0330] The light-emitting device described in this embodiment refers to a self-luminous light-emitting device such as an organic EL element (also called an OLED (organic light-emitting diode)). Note that the light-emitting device electrically connected to the pixel circuit can be a self-luminous light-emitting device such as an LED (light-emitting diode), a micro LED, a QLED (quantum-dot light-emitting diode), or a semiconductor laser.

[0331] The conductor 122a and the conductor 122b can be formed, for example, by forming a conductive film on the insulator 111b, the conductor 121a, the conductor 121b, etc., and then performing a patterning process and an etching process on the conductive film.

[0332] The conductor 122a and the conductor 122b function as the anodes of the light-emitting device 150a and the light-emitting device 150b included in the display device 1000, respectively, as an example.

[0333] For example, indium tin oxide (sometimes referred to as ITO) can be used as the conductor 122a and the conductor 122b.

[0334] Furthermore, each of the conductors 122a and 122b may have a stacked structure of two or more layers instead of a single layer. For example, a conductor with high reflectivity to visible light may be used for the first layer of the conductor, and a conductor with high translucency may be used for the top layer of the conductor. Examples of conductors with high reflectivity to visible light include silver, aluminum, and an alloy film of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC) film). Examples of conductors with high translucency include the aforementioned indium tin oxide. Examples of the conductors 122a and 122b include a stacked film of aluminum sandwiched between a pair of titanium films (a stacked film of Ti, Al, and Ti in this order), a stacked film of silver sandwiched between a pair of indium tin oxide films (a stacked film of ITO, Ag, and ITO in this order), and the like.

[0335] An EL layer 141a is provided over the conductor 122a, and an EL layer 141b is provided over the conductor 122b.

[0336] It is preferable that the EL layer 141a and the EL layer 141b each have a light-emitting layer that emits light of a different color. For example, the EL layer 141a may have a light-emitting layer that emits light of one of red (R), green (G), and blue (B), and the EL layer 141b may have a light-emitting layer that emits light of one of the remaining two. Furthermore, although not shown in FIG. 14 , if an EL layer different from the EL layer 141a and the EL layer 141b is provided, the EL layer may have a light-emitting layer that emits light of the remaining one. In this way, the display device 1000 may have a structure (SBS structure) in which different light-emitting layers for each color are formed on multiple pixel electrodes (such as the conductors 121a and 121b).

[0337] The combination of colors emitted by the light-emitting layers included in the EL layer 141 a and the EL layer 141 b is not limited to the above, and may be, for example, cyan, magenta, or yellow. Although the above example shows three colors, the number of colors emitted by the light-emitting device 150 included in the display device 1000 may be two, three, or four or more.

[0338] The EL layer 141a and the EL layer 141b may each include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to a layer containing a light-emitting organic compound (light-emitting layer).

[0339] In addition, the EL layer 141a and the EL layer 141b can be formed by a method such as a vapor deposition method (vacuum vapor deposition method, etc.), a coating method (for example, a dip coating method, a die coating method, a bar coating method, a spin coating method, or a spray coating method), or a printing method (for example, an inkjet method, a screen (stencil printing) method, an offset (lithographic printing) method, a flexographic (relief printing) method, a gravure method, or a microcontact method).

[0340] When a film formation method such as the coating method or the printing method is used, for example, a polymer compound (e.g., an oligomer, a dendrimer, and a polymer), a medium molecular weight compound (a compound in the intermediate range between a low molecular weight and a high molecular weight: a molecular weight of 400 to 4000), or an inorganic compound (e.g., a quantum dot material) can be used. The quantum dot material can be a colloidal quantum dot material, an alloy quantum dot material, a core-shell quantum dot material, or a core quantum dot material.

[0341] For example, light emitting device 150a and light emitting device 150b in FIG. 14 can be configured with a plurality of layers such as light emitting layer 4411 and layer 4430, as in light emitting device 150 shown in FIG. 15A.

[0342] The layer 4420 can have, for example, a layer containing a substance with a high electron-injecting property (electron-injecting layer) and a layer containing a substance with a high electron-transporting property (electron-transporting layer). The light-emitting layer 4411 contains, for example, a light-emitting compound. The layer 4430 can have, for example, a layer containing a substance with a high hole-injecting property (hole-injecting layer) and a layer containing a substance with a high hole-transporting property (hole-transporting layer).

[0343] A structure having a layer 4420, a light-emitting layer 4411, and a layer 4430 provided between a pair of electrodes (conductor 121 and conductor 122 described later) can function as a single light-emitting unit, and in this specification, the structure of Figure 15A is called a single structure.

[0344] 15B shows a modified example of the EL layer 141 included in the light-emitting device 150 shown in Fig. 15A. Specifically, the light-emitting device 150 shown in Fig. 15B includes a layer 4430-1 on the conductor 121, a layer 4430-2 on the layer 4430-1, a light-emitting layer 4411 on the layer 4430-2, a layer 4420-1 on the light-emitting layer 4411, a layer 4420-2 on the layer 4420-1, and a conductor 122 on the layer 4420-2. For example, when the conductor 121 is the anode and the conductor 122 is the cathode, the layer 4430-1 functions as a hole injection layer, the layer 4430-2 functions as a hole transport layer, the layer 4420-1 functions as an electron transport layer, and the layer 4420-2 functions as an electron injection layer. Alternatively, when the conductor 121 is a cathode and the conductor 122 is an anode, the layer 4430-1 functions as an electron injection layer, the layer 4430-2 functions as an electron transport layer, the layer 4420-1 functions as a hole transport layer, and the layer 4420-2 functions as a hole injection layer. Such a layer structure makes it possible to efficiently inject carriers into the light-emitting layer 4411 and increase the efficiency of carrier recombination in the light-emitting layer 4411.

[0345] Note that a configuration in which a plurality of light-emitting layers (light-emitting layer 4411, light-emitting layer 4412, light-emitting layer 4413) are provided between the layer 4420 and the layer 4430 as shown in FIG. 15C is also a variation of the single structure.

[0346] A laminate having multiple layers, such as layer 4420, light-emitting layer 4411, and layer 4430, may be referred to as a light-emitting unit. Multiple light-emitting units may be connected in series via an intermediate layer (charge generation layer). Specifically, as shown in FIG. 15D , multiple light-emitting units, such as light-emitting unit 4400a and light-emitting unit 4400b, may be connected in series via an intermediate layer (charge generation layer) 4440. In this specification, such a structure is referred to as a tandem structure. In this specification, the tandem structure may also be referred to as a stack structure. By forming a light-emitting device into a tandem structure, a light-emitting device capable of emitting light with high brightness can be obtained. By forming a light-emitting device into a tandem structure, improvements in the light-emitting efficiency and lifespan of the light-emitting device can be expected. When the light-emitting device 150 of the display device 1000 of Figure 14 has a tandem structure, the EL layer 141 can be configured to include, for example, layer 4420, light-emitting layer 4411, and layer 4430 of light-emitting unit 4400a, intermediate layer 4440, and layer 4420, light-emitting layer 4412, and layer 4430 of light-emitting unit 4400b.

[0347] Furthermore, when displaying white, the SBS structure described above can reduce power consumption compared to the single and tandem structures described above. Therefore, when it is desired to keep power consumption low, the SBS structure is preferable. On the other hand, the single and tandem structures are preferable because their manufacturing processes are easier than those of the SBS structure, allowing for lower manufacturing costs or higher manufacturing yields.

[0348] The light-emitting device 150 can emit light in red, green, blue, cyan, magenta, yellow, or white, depending on the material of the EL layer 141. Furthermore, the color purity can be further improved by providing the light-emitting device 150 with a microcavity structure.

[0349] A light-emitting device that emits white light preferably has a configuration in which the light-emitting layer contains two or more types of light-emitting materials. When two light-emitting layers are used to obtain white light emission, the light-emitting layers may be selected so that the emission colors of the two light-emitting layers are in a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the light-emitting device as a whole emits white light may be obtained. Furthermore, when three or more light-emitting layers are used to obtain white light emission, the emission colors of the three or more light-emitting layers may be combined to allow the light-emitting device as a whole to emit white light.

[0350] The light-emitting layer preferably contains two or more light-emitting materials selected from R (red), G (green), B (blue), Y (yellow), and O (orange) as emission colors. Alternatively, the light-emitting layer preferably contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials preferably contains spectral components of two or more colors selected from R, G, and B.

[0351] 14 , a gap is provided between two EL layers between adjacent light-emitting devices. Specifically, in FIG. 14 , a recess is formed between adjacent light-emitting devices, and the insulator 112 covers the side surfaces (side surfaces of the conductor 121a, the conductor 122a, and the EL layer 141a, and side surfaces of the conductor 121b, the conductor 122b, and the EL layer 141b) and the bottom surface (a partial region of the insulator 111b) of the recess. Furthermore, the insulator 162 is formed on the insulator 112 so as to fill the recess. In this manner, the EL layer 141a and the EL layer 141b are preferably provided so as not to be in contact with each other. This can suitably prevent unintended light emission (also known as crosstalk) caused by current (also referred to as lateral leakage current or side leakage current) flowing through the two adjacent EL layers. Therefore, contrast can be improved, and a display device with high display quality can be realized. Furthermore, for example, by configuring the display device so that the lateral leakage current between the light-emitting devices is extremely low, the black display performed by the display device can be a display with extremely little light leakage (also called true black display).

[0352] The EL layers 141a and 141b can be formed, for example, by photolithography. For example, an EL film that will become the EL layers 141a and 141b is formed on the conductor 122, and then the EL film is patterned by photolithography to form the EL layers 141a and 141b. This also makes it possible to provide a gap between the two EL layers between adjacent light-emitting devices.

[0353] However, when an EL film is patterned using photolithography, damage (such as damage due to processing) may occur in the light-emitting layer, which may significantly impair reliability. Therefore, when fabricating an electronic device according to one embodiment of the present invention, it is preferable to use a method in which a sacrificial layer or the like is formed on a layer located above the light-emitting layer (e.g., a carrier-transport layer or a carrier-injection layer, more specifically, an electron-transport layer or an electron-injection layer) and the light-emitting layer is processed into an island shape. By applying this method, a highly reliable electronic device can be provided.

[0354] The insulator 112 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulator 112. The insulator 112 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, an aluminum oxide film is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer in the formation of the insulator 162 described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD (Atomic Layer Deposition) method as the insulator 112, the insulator 112 can have few pinholes and has an excellent function of protecting the EL layer.

[0355] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0356] The insulator 112 can be formed by a sputtering method, a CVD method, a pulsed laser deposition (PLD) method, an ALD method, or the like. The insulator 112 is preferably formed by an ALD method because it has good coverage.

[0357] The insulator 162 provided on the insulator 112 has the function of planarizing recesses formed in the insulator 112 between adjacent light-emitting devices. In other words, the insulator 162 has the effect of improving the flatness of the surface on which the conductor 123 (described later) is formed. For example, an insulating layer containing an organic material can be suitably used for the insulator 162. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins can be used for the insulator 162. Alternatively, the insulator 162 can be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the insulator 162 can be made of, for example, a photosensitive resin. For example, a photoresist can be used as the photosensitive resin. The photosensitive resin may be a positive type material or a negative type material.

[0358] The difference in height between the top surface of the insulator 162 and the top surface of the EL layer 141a or 141b is, for example, preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the insulator 162. For example, the insulator 162 may be provided so that the top surface of the EL layer 141a or 141b is higher than the top surface of the insulator 162. For example, the insulator 162 may be provided so that the top surface of the insulator 162 is higher than the top surface of the light-emitting layer of the EL layer 141a or 141b.

[0359] A conductor 123 is provided over the EL layer 141a, the EL layer 141b, the insulator 112, and the insulator 162. An insulator 113 is provided over each of the light-emitting devices 150a and 150b.

[0360] The conductor 123 functions as, for example, a common electrode for the light-emitting device 150 a and the light-emitting device 150 b. In order to emit light from the light-emitting device 150 upward from the display device 1000, the conductor 122 preferably includes a light-transmitting conductive material.

[0361] The conductor 123 is preferably a material that is highly conductive and has light-transmitting and light-reflecting properties (sometimes called a semi-transparent / semi-reflective electrode). The conductor 122 can be made of, for example, an alloy of silver and magnesium or indium tin oxide.

[0362] The insulator 113 is sometimes referred to as a protective layer, and providing the insulator 113 above each of the light-emitting devices 150a and 150b can improve the reliability of the light-emitting devices. In other words, the insulator 113 functions as a passivation film that protects the light-emitting devices 150a and 150b. Therefore, the insulator 113 is preferably made of a material that prevents the intrusion of water and the like. For example, a material that can be used for the insulator 111a or the insulator 111b can be used as the insulator 113. Specifically, aluminum oxide, silicon nitride, or silicon nitride oxide can be used.

[0363] A resin layer 163 is provided on the insulator 113. Furthermore, a substrate 102 is provided on the resin layer 163.

[0364] The substrate 102 is preferably, for example, a light-transmitting substrate. By using a light-transmitting substrate for the substrate 102, light emitted from the light-emitting device 150a and the light-emitting device 150b can be emitted upward from the substrate 102.

[0365] Note that the display device of one embodiment of the present invention is not limited to the configuration of the display device 1000 illustrated in Fig. 14. The configuration of the display device of one embodiment of the present invention may be changed as appropriate within the scope of solving the problems.

[0366] For example, the transistor 200 included in the pixel layer PXAL of the display device 1000 in Fig. 14 may be a transistor having a metal oxide in a channel formation region (hereinafter referred to as an OS transistor). The display device 1000 shown in Fig. 16 has a configuration in which a transistor 500 (OS transistor) instead of the transistor 200 and a light-emitting device 150 are provided above the circuit layer SICL and the wiring layer LINL of the display device 1000 in Fig. 14.

[0367] 16 , the transistor 500 is provided over an insulator 512. The insulator 512 is provided above the insulator 364 and the conductor 366, and a substance having a barrier property against oxygen and hydrogen is preferably used for the insulator 512. Specifically, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, or aluminum nitride may be used.

[0368] As an example of a film having a barrier property against hydrogen, silicon nitride formed by a CVD method can be used. Here, diffusion of hydrogen into a semiconductor element (e.g., the transistor 500) having an oxide semiconductor may degrade the characteristics of the semiconductor element. Therefore, it is preferable to use a film that suppresses hydrogen diffusion between the transistor 500 and the transistor 300. Specifically, the film that suppresses hydrogen diffusion is a film that releases a small amount of hydrogen.

[0369] For example, the insulator 512 can be made of a material similar to that of the insulator 320. By using a material with a relatively low dielectric constant for these insulators, parasitic capacitance between wirings can be reduced. For example, the insulator 512 can be made of a silicon oxide film or a silicon oxynitride film.

[0370] An insulator 514 is provided over the insulator 512, and the transistor 500 is provided over the insulator 514. An insulator 576 is formed over the insulator 512 to cover the transistor 500. An insulator 581 is formed over the insulator 576.

[0371] The insulator 514 is preferably a film having a barrier property that prevents impurities such as hydrogen from diffusing from the substrate 310 or a region where circuit elements and the like below the insulator 512 are provided to the region where the transistor 500 is provided. Therefore, the insulator 514 can be made of silicon nitride formed by a CVD method, for example.

[0372] As described above, the transistor 500 illustrated in FIG. 16 is an OS transistor including a metal oxide in a channel formation region. Examples of the metal oxide include an In-M-Zn oxide containing indium, an element M, and zinc (the element M is one or more elements selected from aluminum, gallium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the like). Specifically, for example, an oxide containing indium, gallium, and zinc (sometimes referred to as IGZO) may be used as the metal oxide. For example, an oxide containing indium, aluminum, and zinc (sometimes referred to as IAZO) may be used as the metal oxide. For example, an oxide containing indium, aluminum, gallium, and zinc (sometimes referred to as IAGZO) may be used as the metal oxide. In addition to the above, the metal oxide may be In-Ga oxide, In-Zn oxide, or indium oxide.

[0373] In particular, it is preferable to use a metal oxide functioning as a semiconductor having a band gap of 2 eV or more, preferably 2.5 eV or more. By using such a metal oxide having a wide band gap, the off-state current (sometimes referred to as leakage current) of a transistor can be reduced.

[0374] In particular, it is preferable to use a transistor, such as an OS transistor, whose off-state current is sufficiently small even when the source-drain voltage is large as the driving transistor included in the pixel circuit. By using an OS transistor as the driving transistor, the amount of off-state current flowing in the light-emitting device can be reduced when the driving transistor is in an off state, thereby sufficiently reducing the luminance of light emitted from the light-emitting device through which the off-state current flows. Therefore, when a driving transistor with a large off-state current is compared with a driving transistor with a small off-state current, when black is displayed in the pixel circuit, the light emission luminance of the pixel circuit including the driving transistor with a small off-state current can be lowered compared to the pixel circuit including the driving transistor with a large off-state current. In other words, by using an OS transistor, it is possible to suppress floating black when black is displayed in the pixel circuit.

[0375] The off-state current of the OS transistor per 1 μm of channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1 yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0376] Furthermore, in order to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain voltage tolerance than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, a high voltage can be applied between the source and drain of the OS transistor, thereby increasing the amount of current flowing through the light-emitting device and increasing the emission luminance of the light-emitting device.

[0377] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely determined by changing the gate-source voltage, and the amount of current flowing through the light-emitting device can be precisely controlled. Therefore, the light emission luminance of the light-emitting device can be precisely controlled (the gradation in the pixel circuit can be increased).

[0378] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can flow a constant current (saturation current) that is more stable than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable constant current can be flowed through a light-emitting device, for example, even when the current-voltage characteristics of a light-emitting device containing an organic EL material vary. In other words, when an OS transistor operates in a saturation region, the source-drain current hardly changes even when the source-drain voltage increases, and therefore the light-emitting luminance of the light-emitting device can be stabilized.

[0379] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gray levels," "suppression of variations in light-emitting devices," and the like. Therefore, a display device including the pixel circuit can display a clear and smooth image, and as a result, one or more of image clarity (image sharpness) and a high contrast ratio can be observed. Note that image clarity (image sharpness) may refer to either or both of suppression of motion blur and suppression of black floating. Furthermore, by configuring the driving transistor included in the pixel circuit to have an extremely low off-state current, black display performed by the display device can be achieved with extremely little light leakage (true black display).

[0380] At least one of the insulators 576 and 581 preferably functions as a barrier insulating film that prevents impurities such as water or hydrogen from diffusing into the transistor 500 from above the transistor 500. Therefore, at least one of the insulators 576 and 581 preferably contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, or nitrogen oxide molecules (for example, N ２ O, NO, and NO ２ It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities such as copper atoms and copper atoms (i.e., impermeability of the impurities is low). Alternatively, it is preferable to use an insulating material that has a function of suppressing the diffusion of oxygen (e.g., oxygen atoms and / or oxygen molecules) (i.e., impermeability of the oxygen is low).

[0381] It is preferable that one or both of the insulators 576 and 581 be insulators that have the function of suppressing the diffusion of impurities such as water and hydrogen and oxygen, and one or both of the insulators 576 and 581 can be, for example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium-gallium-zinc oxide, silicon nitride, or silicon nitride oxide.

[0382] Openings for forming plugs or wirings are provided in the insulator 581, the insulator 576, and one of the source and drain electrodes of the transistor 500. A conductor 540 functioning as a plug or wiring is formed in the opening.

[0383] For example, the insulator 581 preferably functions as one or both of an interlayer film and a planarizing film.

[0384] An insulator 224 and an insulator 226 are formed above the insulator 581 and the conductor 540. Note that for descriptions of insulators, conductors, circuit elements, and the like located above the insulator 224, including the insulator 224, please refer to the description of the display device 1000 in FIG.

[0385] 14 shows a display device formed by bonding a semiconductor substrate on which a light-emitting device 150, a pixel circuit, and the like are formed and a semiconductor substrate on which a driver circuit and the like are formed, and FIG. 16 shows a display device in which the light-emitting device 150, the pixel circuit, and the like are formed on a semiconductor substrate on which a driver circuit is formed, but the display device according to the electronic device of one embodiment of the present invention is not limited to FIG. 14 or 16. The display device according to the electronic device of one embodiment of the present invention may be, for example, a display device having a structure in which only one layer of transistors is formed, instead of a layer structure in which two or more transistors are stacked.

[0386] Specifically, for example, a display device related to the electronic device of one embodiment of the present invention may have a structure including a circuit including a transistor 200 formed over a substrate 210 and a light-emitting device 150 provided above the transistor 200, as in the display device 1000 illustrated in Figure 17A. Alternatively, for example, a display device 1000 may have a structure in which an insulator 512 is formed over a substrate 501, and the transistor 500 is provided over the insulator 512 and the light-emitting device 150 is provided above the transistor 500, as in the display device 1000 illustrated in Figure 17B. Note that the substrate 501 can be, for example, a substrate that can be used for the substrate 310, and is preferably a glass substrate.

[0387] 17A and 17B , the display device according to the electronic device of one embodiment of the present invention may have a structure in which only one layer of transistors is formed and a light-emitting device 150 is provided above the transistor. Although not shown, the display device according to the electronic device of one embodiment of the present invention may have a layer structure in which three or more layers of transistors are formed.

[0388] <Example of Sealing Structure of Display Device> Next, a sealing structure of the light-emitting device 150 that can be applied to the display device 1000 of FIG. 14 will be described.

[0389] Fig. 18A is a cross-sectional view showing an example of a sealing structure that can be applied to the display device 1000 of Fig. 14. Specifically, Fig. 18A illustrates an edge of the display device 1000 of Fig. 14 and materials provided around the edge. Fig. 18A also illustrates an extracted portion of the pixel layer PXAL of the display device 1000. Specifically, each of Fig. 18A illustrates the insulator 250, and the insulators, conductors, light-emitting device 150a, etc., located above the insulator 250.

[0390] 18A , an opening is provided. As an example, a conductor 121CM is provided in the opening. The conductor 123 is electrically connected to wiring provided below the insulator 250 via the conductor 121CM. This allows a potential (e.g., an anode potential or a cathode potential in the light-emitting device 150a, etc.) to be supplied to the conductor 123, which functions as a common electrode. Note that one or both of the conductors included in the region 123CM and the conductors around the region 123CM may be referred to as a connection electrode.

[0391] Furthermore, for the conductor 121CM, for example, a material applicable to the conductor 121 can be used.

[0392] 18A , an adhesive layer 164 is provided on or around an end of a resin layer 163. Specifically, the display device 1000 is configured so that the insulator 113 and the substrate 102 are connected via the adhesive layer 164.

[0393] The adhesive layer 164 is preferably made of a material that suppresses the permeation of impurities such as moisture, for example. By using such a material for the adhesive layer 164, the reliability of the display device 1000 can be improved.

[0394] A structure in which the insulator 113 and the substrate 102 are bonded together via the resin layer 163 using the adhesive layer 164 is sometimes called a solid sealing structure. In addition, in the solid sealing structure, if the resin layer 163 has the function of bonding the insulator 113 and the substrate 102 together, similar to the adhesive layer 164, the adhesive layer 164 is not necessarily provided.

[0395] On the other hand, a structure in which the insulator 113 and the substrate 102 are bonded together using the adhesive layer 164 and filled with an inert gas instead of the resin layer 163 is sometimes called a hollow sealing structure (not shown). Examples of the inert gas include nitrogen and argon.

[0396] 18A , two or more adhesive layers may be stacked. For example, as shown in FIG. 18B , an adhesive layer 165 may be provided inside adhesive layer 164 (between adhesive layer 164 and resin layer 163). Stacking two or more adhesive layers can further suppress the permeation of impurities such as moisture, thereby further improving the reliability of display device 1000.

[0397] Furthermore, a desiccant may be mixed into the adhesive layer 165. This allows the moisture contained in the adhesive layer 164, the resin layer 163 formed inside the adhesive layer 165, the insulator, the conductor, and the EL layer to be adsorbed by the desiccant, thereby improving the reliability of the display device 1000.

[0398] Furthermore, although the display device 1000 in FIG. 18B has a solid sealing structure, it may have a hollow sealing structure.

[0399] 18A and 18B, an inert liquid may be filled in place of the resin layer 163. As the inert liquid, for example, a fluorine-based inert liquid may be used.

[0400] <Modification of Display Device> One embodiment of the present invention is not limited to the above-described configuration, and the above-described configuration can be modified as appropriate depending on the situation. Modifications of the display device 1000 in FIG. 14 will be described below with reference to FIGS. 19A to 20B . Note that FIGS. 19A to 20B illustrate only a portion of the pixel layer PXAL of the display device 1000. Specifically, each of FIGS. 19A to 20B illustrates the insulator 250, the insulator 111a, the insulators positioned above the insulator 111a, the conductors, the light-emitting device 150a, the light-emitting device 150b, and the like. In particular, FIGS. 19A to 20B also illustrate the light-emitting device 150c, the conductor 121c, the conductor 122c, and the EL layer 141c.

[0401] Note that, for example, the color of light emitted by the EL layer 141c may be different from the colors of light emitted by the EL layer 141a and the EL layer 141b. Furthermore, for example, the display device 1000 may be configured so that the number of colors emitted by the light-emitting devices 150a to 150c is two. Furthermore, for example, the display device 1000 may be configured so that the number of colors emitted by the light-emitting devices is increased to four or more (not shown).

[0402] 19A , for example, the display device 1000 may have a configuration in which the EL layer 142 is formed on the EL layers 141a to 141c. Specifically, for example, in FIG. 15A , when the EL layers 141a to 141c include the layer 4430 and the light-emitting layer 4411, the EL layer 142 may include the layer 4420. In this case, the layer 4420 included in the EL layer 142 functions as a common layer in each of the light-emitting devices 150a to 150c. Similarly, for example, in FIG. 15C , when the EL layers 141a to 141c include the layer 4430, the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413, the EL layer 142 includes the layer 4420, so that the layer 4420 included in the EL layer 142 functions as a common layer in each of the light-emitting devices 150a to 150c. Furthermore, for example, in FIG. 15D, when the EL layers 141a to 141c are configured to include the layer 4430, the light-emitting layer 4412, and the layer 4420 of the light-emitting unit 4400b, the intermediate layer 4440, and the layer 4430 and the light-emitting layer 4411 of the light-emitting unit 4400a, the EL layer 142 is configured to include the layer 4420 of the light-emitting unit 4400b, so that the layer 4420 of the light-emitting unit 4400a included in the EL layer 142 functions as a common layer in each of the light-emitting devices 150a to 150c.

[0403] Furthermore, for example, the display device 1000 may have a configuration in which the insulator 113 has a stacked structure of two or more layers instead of a single layer. For example, the insulator 113 may have a three-layer stacked structure in which an insulator made of an inorganic material is used as a first layer, an insulator made of an organic material is used as a second layer, and an insulator made of an inorganic material is used as a third layer. Figure 19B illustrates a cross-sectional view of a portion of the display device 1000 in which the insulator 113 has a multilayer structure including the insulators 113a, 113b, and 113c, in which the insulator 113a is an inorganic insulator, the insulator 113b is an organic insulator, and the insulator 113c is an inorganic insulator.

[0404] 15A , the display device 1000 may have a microcavity structure (microresonator structure) in each of the EL layers 141 a to 141 c. The microcavity structure refers to a structure in which, for example, a light-transmitting and light-reflective conductive material is used for the conductor 122 that is the upper electrode (common electrode) and a light-reflective conductive material is used for the conductor 121 that is the lower electrode (pixel electrode), and the distance between the bottom surface of the light-emitting layer and the top surface of the lower electrode, that is, the film thickness of the layer 4430 in FIG. 15A , is set to a thickness corresponding to the wavelength of the color of light emitted by the light-emitting layer included in the EL layer 141.

[0405] For example, since light reflected by the lower electrode and returned (reflected light) causes significant interference with light directly incident on the upper electrode from the light-emitting layer (incident light), it is preferable to adjust the optical distance between the lower electrode and the light-emitting layer to (2n-1)λ / 4 (where n is a natural number greater than or equal to 1, and λ is the wavelength of the emitted light to be amplified). By adjusting this optical distance, the phases of the reflected light and incident light, each of which has a wavelength λ, can be matched, thereby further amplifying the light emitted from the light-emitting layer. On the other hand, if the reflected light and incident light have a wavelength other than λ, they will no longer match in phase, resulting in attenuation without resonance.

[0406] In the above configuration, the EL layer may have a structure having multiple light-emitting layers or a structure having a single light-emitting layer. Furthermore, for example, in combination with the above-described tandem light-emitting device configuration, a single light-emitting device may be provided with multiple EL layers sandwiching a charge-generating layer therebetween, and each EL layer may have a single or multiple light-emitting layers.

[0407] The microcavity structure makes it possible to increase the light emission intensity of a specific wavelength in the front direction, thereby reducing power consumption. In particular, in the case of devices for XR such as VR and AR, light from the light-emitting device is often incident on the eyes of a user wearing the device in the front direction, so it can be said that providing a microcavity structure in a display device for XR devices is preferable. Note that in the case of a display device that displays images using four sub-pixels of red, yellow, green, and blue, in addition to the brightness improvement effect of yellow emission, the microcavity structure that can be applied to all sub-pixels is suitable for each color wavelength, resulting in a display device with good characteristics.

[0408] 20A shows a cross-sectional view of a portion of the display device 1000 having a microcavity structure, as an example. Furthermore, when the light-emitting device 150a has a light-emitting layer that emits blue (B) light, the light-emitting device 150b has a light-emitting layer that emits green (G), and the light-emitting device 150c has a light-emitting layer that emits red (R), as shown in FIG. 20A , it is preferable that the thicknesses of the EL layers 141a, 141b, and 141c increase in this order. Specifically, the thicknesses of the layers 4430 included in the EL layers 141a, 141b, and 141c can be determined according to the color of light emitted by each light-emitting layer. In this case, the layer 4430 included in the EL layer 141a is the thinnest, and the layer 4430 included in the EL layer 141c is the thickest.

[0409] 20B shows, as an example, a configuration in which coloring layers 166a, 166b, and 166c are provided between the resin layer 163 and the substrate 102. Note that the coloring layers 166a to 166c can be formed on the substrate 102. In addition, when the light-emitting device 150a has a light-emitting layer that emits blue (B), the light-emitting device 150b has a light-emitting layer that emits green (G), and the light-emitting device 150c has a light-emitting layer that emits red (R), the coloring layer 166a is blue, the coloring layer 166b is green, and the coloring layer 166c is red.

[0410] 20B can be constructed by bonding the substrate 102 provided with the colored layers 166a to 166c to the substrate 310 on which the light-emitting devices 150a to 150c are formed, via the resin layer 163. At this time, the bonding is preferably performed so that the light-emitting device 150a and the colored layer 166a overlap, the light-emitting device 150b and the colored layer 166b overlap, and the light-emitting device 150c and the colored layer 166c overlap. By providing the colored layers 166a to 166c in the display device 1000, for example, light emitted by the light-emitting device 150b does not exit above the substrate 102 via the colored layer 166a or the colored layer 166c, but exits above the substrate 102 via the colored layer 166b. In other words, since it is possible to block light from the light-emitting device 150 of the display device 1000 in an oblique direction (the direction of the elevation angle when the top surface of the substrate 102 is considered to be a horizontal plane), it is possible to reduce the dependency of the display device 1000 on the viewing angle, and it is possible to prevent a decrease in the display quality of the image displayed on the display device 1000 when viewed from an oblique angle.

[0411] The colored layers 166a to 166c formed on the substrate 102 may be covered with a resin called an overcoat layer. Specifically, the display device 1000 may be stacked in the following order (not shown): the resin layer 163, the overcoat layer, the colored layers 166a to 166c, and the substrate 102. Note that examples of resins used for the overcoat layer include thermosetting materials that are light-transmitting and based on acrylic resin or epoxy resin.

[0412] Furthermore, for example, the display device 1000 may include a black matrix (not shown) in addition to the colored layers. By providing a black matrix between the colored layers 166 a and 166 b, between the colored layers 166 b and 166 c, and between the colored layers 166 c and 166 a, it is possible to more effectively block light from the light-emitting device 150 of the display device 1000 in an oblique direction (the direction of the elevation angle when the top surface of the substrate 102 is considered to be a horizontal plane), thereby more effectively preventing a decrease in the display quality of an image displayed on the display device 1000 when the image is viewed obliquely.

[0413] 20B, when the display device has a colored layer, the light-emitting devices 150a to 150c included in the display device may all be light-emitting devices that emit white light (not shown). The light-emitting devices may have, for example, a single structure or a tandem structure.

[0414] Although the above-described structure of the display device 1000 includes the conductors 121a to 121c as anodes and the conductor 122 as a cathode, the display device 1000 may include the conductors 121a to 121c as cathodes and the conductor 122 as an anode. That is, in the manufacturing process described above, the stack order of the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer included in the EL layers 141a to 141c and the EL layer 142 may be reversed.

[0415] <Structural Example of Insulator 162> Next, a cross-sectional structure of a region including the insulator 162 and its periphery in the display device 1000 will be shown.

[0416] 21A shows an example in which the thicknesses of the EL layer 141a and the EL layer 141b are different from each other. The height of the top surface of the insulator 112 is the same or approximately the same as the height of the top surface of the EL layer 141a on the EL layer 141a side, and is the same or approximately the same as the height of the top surface of the EL layer 141b on the EL layer 141b side. The top surface of the insulator 112 has a gentle slope, with the EL layer 141a side being higher and the EL layer 141b side being lower. In this way, the heights of the insulators 112 and 162 are preferably the same as the height of the top surfaces of the adjacent EL layers. Alternatively, the top surface may have a flat portion that is the same as the height of the top surface of one of the adjacent EL layers.

[0417] 21B, the top surface of the insulator 162 has a region higher than the top surfaces of the EL layers 141a and 141b. The top surface of the insulator 162 has a shape that gently bulges outward in a convex shape toward the center.

[0418] 21C , the display device 1000 has a region in which the top surface of the insulator 112 is higher than the top surfaces of the EL layers 141a and 141b. Furthermore, in a region including the insulator 162 and its periphery, the display device 1000 has a first region located on one or both of the sacrificial layers 118 and 119. The first region is higher than the top surfaces of the EL layers 141a and 141b, and a part of the insulator 162 is formed in the first region. Furthermore, in a region including the insulator 162 and its periphery, the display device 1000 has a second region located on one or both of the sacrificial layers 118 and 119. The second region is higher than the top surfaces of the EL layers 141a and 141b, and a part of the insulator 162 is formed in the second region.

[0419] 21D, the top surface of the insulator 162 has an area that is lower than the top surfaces of the EL layers 141a and 141b. The top surface of the insulator 162 has a gently sloping recess that is concave toward the center.

[0420] 21E, the upper surface of the insulator 112 has a region higher than the upper surface of the EL layer 141a and the upper surface of the EL layer 141b. That is, the insulator 112 protrudes from the surface on which the EL layer 141 is to be formed, forming a convex portion.

[0421] When forming the insulator 112, for example, if the insulator 112 is formed so that its height is aligned or approximately aligned with that of the sacrificial layer, the insulator 112 may be formed in a protruding shape, as shown in FIG. 21E.

[0422] 21F, the upper surface of the insulator 112 has a region that is lower than the upper surfaces of the EL layers 141a and 141b. That is, the insulator 112 forms a recess on the surface where the EL layer 141 is to be formed.

[0423] In this way, the insulators 112 and 162 can be applied in various shapes.

[0424] <Configuration Example of Pixel Circuit> Here, a configuration example of a pixel circuit that can be provided in the pixel layer PXAL will be described.

[0425] 22A and 22B show a configuration example of a pixel circuit that can be provided in the pixel layer PXAL and a light-emitting device 150 connected to the pixel circuit. Also, FIG. 22A is a diagram showing the connections of each circuit element included in the pixel circuit 400 provided in the pixel layer PXAL, and FIG. 22B is a diagram schematically showing the hierarchical relationship of a circuit layer SICL including a drive circuit 410 and the like, a layer OSL including multiple transistors included in the pixel circuit, and a layer EML including a light-emitting device 150. Note that the pixel layer PXAL of the display device 1000 shown in FIG. 22B includes, as an example, a layer OSL and a layer EML. Also, the transistors 500A, 500B, 500C, and the like included in the layer OSL shown in FIG. 22B correspond to the transistor 200 in FIG. 14. Also, the light-emitting device 150 included in the layer EML shown in FIG. 22B corresponds to the light-emitting device 150a or the light-emitting device 150b in FIG. 14.

[0426] 22A and 22B include a transistor 500A, a transistor 500B, a transistor 500C, and a capacitor 600. The transistors 500A, 500B, and 500C can be transistors applicable to the transistor 200 described above, for example. That is, the transistors 500A, 500B, and 500C can be Si transistors or Si transistors. Alternatively, the transistors 500A, 500B, and 500C can be transistors applicable to the transistor 500 described above, for example. That is, the transistors 500A, 500B, and 500C can be OS transistors or Si transistors. In particular, when the transistors 500A, 500B, and 500C are OS transistors, each of the transistors 500A, 500B, and 500C preferably includes a back gate electrode. In this case, the back gate electrode may receive the same signal as the gate electrode, or a different signal from the gate electrode. Although the transistors 500A, 500B, and 500C each include a back gate electrode in FIGS. 22A and 22B, the transistors 500A, 500B, and 500C may not include a back gate electrode.

[0427] The transistor 500B includes a gate electrode electrically connected to the transistor 500A, a first electrode electrically connected to the light-emitting device 150, and a second electrode electrically connected to the wiring ANO. The wiring ANO is a wiring for applying a potential for supplying a current to the light-emitting device 150.

[0428] The transistor 500A has a first terminal electrically connected to the gate electrode of the transistor 500B, a second terminal electrically connected to the wiring SL that functions as a source line, and a gate electrode that has the function of controlling the conductive state or non-conductive state based on the potential of the wiring GL1 that functions as a gate line.

[0429] The transistor 500C includes a first terminal electrically connected to a wiring V0, a ​​second terminal electrically connected to the light-emitting device 150, and a gate electrode having a function of controlling the conductive state or non-conductive state based on the potential of a wiring GL2 functioning as a gate line. The wiring V0 is a wiring for applying a reference potential and a wiring for outputting a current flowing through the pixel circuit 400 to the driver circuit 410.

[0430] The capacitor 600 includes a conductive film electrically connected to the gate electrode of the transistor 500B and a conductive film electrically connected to the second electrode of the transistor 500C.

[0431] The light-emitting device 150 includes a first electrode electrically connected to the first electrode of the transistor 500B and a second electrode electrically connected to a wiring VCOM. The wiring VCOM is a wiring for applying a potential for supplying a current to the light-emitting device 150.

[0432] This allows the intensity of light emitted by light-emitting device 150 to be controlled in accordance with an image signal applied to the gate electrode of transistor 500B. Furthermore, the reference potential of wiring V0 applied via transistor 500C can suppress variations in the gate-source voltage of transistor 500B.

[0433] Furthermore, the wiring V0 can output a current of an amount that can be used to set pixel parameters. More specifically, the wiring V0 can function as a monitor line for outputting the current flowing through the transistor 500B or the current flowing through the light-emitting device 150 to the outside. The current output to the wiring V0 is converted into a voltage by a source follower circuit or the like and output to the outside. Alternatively, it can be converted into a digital signal by an analog-to-digital conversion circuit or the like and output to the AI ​​accelerator described in the above embodiment.

[0434] In the configuration shown as an example in FIG. 22B , the wiring electrically connecting the pixel circuit 400 and the driver circuit 410 can be shortened, thereby reducing the wiring resistance of the wiring. Therefore, data can be written at high speed, allowing the display device 1000 to be driven at high speed. This allows a sufficient frame period to be ensured even if the display device 1000 has a large number of pixel circuits 400, thereby increasing the pixel density of the display device 1000. Furthermore, increasing the pixel density of the display device 1000 can increase the resolution of images displayed by the display device 1000. For example, the pixel density of the display device 1000 can be set to 1000 ppi or more, 5000 ppi or more, or 7000 ppi or more. Therefore, the display device 1000 can be used as a display device for AR or VR, for example, and can be suitably applied to electronic devices in which the display unit is close to the user, such as a head-mounted display.

[0435] 22A and 22B show an example of the pixel circuit 400 including three transistors in total, but the pixel circuit of the electronic device of one embodiment of the present invention is not limited to this. Below, a configuration example of a pixel circuit that can be used for the pixel circuit 400 will be described.

[0436] The pixel circuit 400A shown in Fig. 23A includes a transistor 500A, a transistor 500B, and a capacitor 600. Fig. 23A also illustrates a light-emitting device 150 connected to the pixel circuit 400A. The pixel circuit 400A is electrically connected to a wiring SL, a wiring GL, a wiring ANO, and a wiring VCOM.

[0437] The transistor 500A has a gate electrically connected to a wiring GL, one of its source and drain electrically connected to a wiring SL, and the other electrically connected to the gate of the transistor 500B and one electrode of the capacitor 600. The transistor 500B has one of its source and drain electrically connected to a wiring ANO, and the other electrically connected to the anode of the light-emitting device 150. The capacitor 600 has the other electrode electrically connected to the anode of the light-emitting device 150. The light-emitting device 150 has a cathode electrically connected to a wiring VCOM.

[0438] 23B has a configuration in which a transistor 500C is added to the pixel circuit 400A. A wiring V0 is electrically connected to the pixel circuit 400B.

[0439] The pixel circuit 400C shown in FIG. 23C is an example in which the transistors 500A and 500B in the pixel circuit 400A are transistors whose gates and back gates are electrically connected. The pixel circuit 400D shown in FIG. 23D is an example in which the same transistors are used in the pixel circuit 400B. This can increase the current that the transistors can pass. Note that, although transistors whose pair of gates is electrically connected are used for all the transistors here, this is not a limitation. Alternatively, a transistor having a pair of gates electrically connected to different wirings may be used. For example, reliability can be improved by using a transistor in which one of the gates is electrically connected to the source.

[0440] 24A has a configuration in which a transistor 500D is added to the pixel circuit 400B described above. The pixel circuit 400E is electrically connected to three wirings (a wiring GL1, a wiring GL2, and a wiring GL3) that function as gate lines.

[0441] The gate of the transistor 500D is electrically connected to a wiring GL3, one of the source and drain of the transistor 500D is electrically connected to the gate of the transistor 500B, and the other is electrically connected to a wiring V0. The gate of the transistor 500A is electrically connected to a wiring GL1, and the gate of the transistor 500C is electrically connected to a wiring GL2.

[0442] By simultaneously turning on the transistors 500C and 500D, the source and gate of the transistor 500B have the same potential, and the transistor 500B can be turned off. This forcibly cuts off the current flowing through the light-emitting device 150. Such a pixel circuit is suitable for use in a display method in which display periods and off periods are alternately provided.

[0443] 24B is an example in which a capacitor 600A is added to the pixel circuit 400E. The capacitor 600A functions as a storage capacitor.

[0444] 24C and 24D are examples in which transistors whose gates and back gates are electrically connected are applied to the pixel circuit 400E or 400F, respectively. Transistors whose gates and back gates are electrically connected are applied to the transistors 500A, 500C, and 500D, and a transistor whose gate is electrically connected to the source is applied to the transistor 500B.

[0445] 25A is a schematic top view illustrating a configuration example in which a light-emitting device and a light-receiving device are arranged within one pixel in a display device 1000 according to one embodiment of the present invention. The display device 1000 includes a plurality of light-emitting devices 150R that emit red light, a plurality of light-emitting devices 150G that emit green light, a plurality of light-emitting devices 150B that emit blue light, and a plurality of light-receiving devices 160. In FIG. 25A , in order to easily distinguish between the light-emitting devices 150, the symbols R, G, and B are assigned within the light-emitting regions of the light-emitting devices 150. Furthermore, the symbol PD is assigned within the light-receiving regions of the light-receiving devices 160.

[0446] The light-emitting devices 150R, 150G, 150B, and the light-receiving devices 160 are arranged in a matrix. FIG. 25A shows an example in which the light-emitting devices 150R, 150G, and 150B are arranged in the X direction, and the light-receiving devices 160 are arranged below them. FIG. 25A also shows an example in which the light-emitting devices 150 emitting light of the same color are arranged in the Y direction intersecting the X direction. In the display device 1000 shown in FIG. 25A , a pixel 180 can be configured by, for example, a sub-pixel having the light-emitting device 150R, a sub-pixel having the light-emitting device 150G, and a sub-pixel having the light-emitting device 150B arranged in the X direction, and a sub-pixel having the light-receiving device 160 provided below these sub-pixels.

[0447] For the light-emitting device 150R, the light-emitting device 150G, and the light-emitting device 150B, it is preferable to use an organic EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the organic EL elements have include fluorescent materials, phosphorescent materials, inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). Note that, as the TADF material, a material that is in thermal equilibrium between a singlet excited state and a triplet excited state may be used. Such a TADF material has a short emission lifetime (excitation lifetime), and therefore can suppress a decrease in efficiency in a high brightness region of a light-emitting element.

[0448] For example, a pn-type or pin-type light-receiving device can be used as the light-receiving device 160. The light-receiving device 160 functions as a photoelectric conversion element that detects light incident on the light-receiving device 160 and generates electric charges. The amount of electric charges generated is determined based on the amount of incident light.

[0449] In particular, it is preferable to use an organic light-receiving device having a layer containing an organic compound as the light-receiving device 160. The organic light-receiving device can be easily made thin, lightweight, and large in area, and has a high degree of freedom in shape and design, and therefore can be applied to various display devices.

[0450] In an electronic device according to one embodiment of the present invention, an organic EL element is used as the light-emitting device 150, and an organic light-receiving device is used as the light-receiving device 160. The organic EL element and the organic light-receiving device can be formed on the same substrate. Therefore, the organic light-receiving device can be incorporated into a display device using the organic EL element. Note that the organic EL elements and the organic light-receiving device are preferably separated by photolithography. This allows the distance between the light-emitting devices, between the organic light-receiving devices, or between the light-emitting device and the organic light-receiving device to be narrowed, thereby realizing a display device with a higher aperture ratio than when a shadow mask such as a metal mask is used.

[0451] 25A shows a conductor 123 that functions as a common electrode and a conductor 121CM that functions as a connection electrode. Here, the conductor 121CM is electrically connected to the conductor 123. The conductor 121CM is provided outside the display section in which the light-emitting devices 150 and the light-receiving devices 160 are arranged. Also in FIG. 25A, the conductor 123 having an area that overlaps with the light-emitting devices 150, the light-receiving devices 160, and the conductor 121CM is shown by dashed lines.

[0452] The conductor 121CM can be provided along the outer periphery of the display unit. For example, it may be provided along one side of the outer periphery of the display unit, or it may be provided over two or more sides of the outer periphery of the display unit. In other words, if the top surface of the display unit has a rectangular shape, the top surface of the conductor 121CM can have a strip-like, L-shaped, U-shaped (square bracket-shaped), square, or the like shape.

[0453] Fig. 25B is a schematic top view showing an example of the configuration of display device 1000, which is a modification of display device 1000 shown in Fig. 25A. Display device 1000 shown in Fig. 25B differs from display device 1000 shown in Fig. 25A in that it includes light-emitting device 150IR that emits infrared light. Light-emitting device 150IR can emit, for example, near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less).

[0454] 25B, in addition to light-emitting devices 150R, 150G, and 150B, light-emitting device 150IR is arranged in the X direction, and light-receiving device 160 is arranged below light-emitting device 150IR. In addition, light-receiving device 160 has a function of detecting infrared light.

[0455] Fig. 26A is a cross-sectional view corresponding to dashed-dotted line A1-A2 in Fig. 25A, and Fig. 26B is a cross-sectional view corresponding to dashed-dotted line B1-B2 in Fig. 25A. Fig. 26C is a cross-sectional view corresponding to dashed-dotted line C1-C2 in Fig. 25A, and Fig. 26D is a cross-sectional view corresponding to dashed-dotted line D1-D2 in Fig. 25A. Light-emitting device 150R, light-emitting device 150G, light-emitting device 150B, and light-receiving device 160 are provided on insulator 111. Furthermore, when display device 1000 includes light-emitting device 150IR, light-emitting device 150IR is provided on insulator 111.

[0456] In this specification and the like, for example, when it is said that "B is on A" or "B is below A", it is not necessary that there is an area where A and B are in contact with each other.

[0457] Fig. 26A shows an example of the cross-sectional configuration of the light-emitting device 150R, the light-emitting device 150G, and the light-emitting device 150B in Fig. 25A. Also, Fig. 26B shows an example of the cross-sectional configuration of the light-receiving device 160 in Fig. 25A.

[0458] The light-emitting device 150R has a conductor 121R functioning as a pixel electrode, a hole injection layer 85R, a hole transport layer 86R, a light-emitting layer 87R, an electron transport layer 88R, a common layer 89, and a conductor 123. The light-emitting device 150G has a conductor 121G functioning as a pixel electrode, a hole injection layer 85G, a hole transport layer 86G, a light-emitting layer 87G, an electron transport layer 88G, a common layer 89, and a conductor 123. The light-emitting device 150B has a conductor 121B functioning as a pixel electrode, a hole injection layer 85B, a hole transport layer 86B, a light-emitting layer 87B, an electron transport layer 88B, a common layer 89, and a conductor 123. The light-receiving device 160 has a conductor 121PD functioning as a pixel electrode, a hole transport layer 86PD, a light-receiving layer 90, an electron transport layer 88PD, a common layer 89, and a conductor 123.

[0459] The conductor 121R, the conductor 121G, and the conductor 121B can be, for example, the conductor 121a, the conductor 121b, and the conductor 121c shown in FIGS. 19A to 20B.

[0460] The common layer 89 functions as an electron injection layer in the light-emitting device 150. On the other hand, the common layer 89 functions as an electron transport layer in the light-receiving device 160. Therefore, the light-receiving device 160 does not need to have the electron transport layer 88PD.

[0461] The hole injection layer 85, the hole transport layer 86, the electron transport layer 88, and the common layer 89 can also be referred to as functional layers.

[0462] The conductor 121, the hole injection layer 85, the hole transport layer 86, the light-emitting layer 87, and the electron transport layer 88 can be provided separately for each element. The common layer 89 and the conductor 123 are provided in common to the light-emitting device 150R, the light-emitting device 150G, the light-emitting device 150B, and the light-receiving device 160.

[0463] 26A , the light-emitting device 150 and the light-receiving device 160 may have a hole-blocking layer and an electron-blocking layer. The light-emitting device 150 and the light-receiving device 160 may also have a layer containing a bipolar substance (a substance with high electron-transporting and hole-transporting properties) or the like.

[0464] The insulating layer 92 is provided so as to cover the end of the conductor 121R, the end of the conductor 121G, the end of the conductor 121B, and the end of the conductor 121PD. The end of the insulating layer 92 is preferably tapered. Note that the insulating layer 92 does not have to be provided if it is not necessary.

[0465] Note that, for example, the insulating layer 92 may be provided to prevent adjacent pixels (for example, the light-emitting device 150R and the light-emitting device 150G, the light-emitting device 150G and the light-emitting device 150B, etc.) from accidentally emitting light due to an unintentional electrical short circuit. Furthermore, when a light-emitting device is formed using a metal mask, the insulating layer 92 may be provided to cover the respective ends of the conductor 121R, the conductor 121G, the conductor 121B, and the conductor 121PD in order to prevent the metal mask from contacting the conductor 121R, the conductor 121G, the conductor 121B, and the conductor 121PD. As a result, the surface of insulating layer 92 becomes higher than the surfaces of conductors 121R, 121G, 121B, and conductor 121PD, eliminating contact between the metal mask and conductors 121R, 121G, 121B, and conductor 121PD, and preventing damage to the surfaces of conductors 121R, conductor 121G, conductor 121B, and conductor 121PD.

[0466] For example, the hole injection layer 85R, the hole injection layer 85G, the hole injection layer 85B, and the hole transport layer 86PD each have a region in contact with the upper surface of the conductor 121 and a region in contact with the surface of the insulating layer 92. Furthermore, the end of the hole injection layer 85R, the end of the hole injection layer 85G, the end of the hole injection layer 85B, and the end of the hole transport layer 86PD are located on the insulating layer 92.

[0467] Furthermore, a gap is provided between the common layer 89 and the insulating layer 92. This prevents the common layer 89 from coming into contact with the side surfaces of the light-emitting layer 87, the light-receiving layer 90, the hole-transport layer 86, and the hole-injection layer 85. This prevents short circuits in the light-emitting device 150 and the light-receiving device 160.

[0468] The voids are more easily formed, for example, as the distance between the light-emitting layers 87 becomes shorter. For example, the voids can be suitably formed when the distance is 1 μm or less, preferably 500 nm or less, and more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less.

[0469] In addition, a protective layer 91 is provided on the conductor 123. The protective layer 91 has a function of preventing impurities such as water from diffusing from above into each light-emitting element.

[0470] The protective layer 91 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 91 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0471] Alternatively, the protective layer 91 may be a laminated film of an inorganic insulating film and an organic insulating film. For example, a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This allows the upper surface of the organic insulating film to be flat, thereby improving the coverage of the inorganic insulating film thereon and enhancing the barrier properties. Furthermore, since the upper surface of the protective layer 91 is flat, when a structure (e.g., a color filter, a touch sensor electrode, and a lens array) is provided above the protective layer 91, the influence of uneven shapes caused by the structure below can be reduced, which is preferable.

[0472] 26A illustrates a configuration in which, from bottom to top, the light-emitting device 150 includes a conductor 121, a hole-injection layer 85, a hole-transport layer 86, a light-emitting layer 87, an electron-transport layer 88, a common layer 89 (electron-injection layer), and a conductor 123, and the light-receiving device 160 includes, from bottom to top, a conductor 121PD, a hole-transport layer 86PD, a light-receiving layer 90, an electron-transport layer 88PD, the common layer 89, and a conductor 123. However, the configuration of a light-emitting device or a light-receiving device according to one embodiment of the present invention is not limited to this. For example, the light-emitting device 150 may include, from bottom to top, a conductor functioning as a pixel electrode, an electron-injection layer, an electron-transport layer, a light-emitting layer, a hole-transport layer, a hole-injection layer, and a conductor functioning as a common electrode, and the light-receiving device 160 may include, from bottom to top, a conductor functioning as a pixel electrode, an electron-transport layer, a light-receiving layer, a hole-transport layer, and a conductor functioning as a common electrode. In this case, the hole injection layer of the light-emitting device 150 can be a common layer, and the common layer can be provided between the hole transport layer and the common electrode of the light-receiving device 160. Furthermore, in the light-emitting device 150, the electron injection layer can be separated for each element.

[0473] <Pixel Layout> Here, a pixel layout different from the pixel layout shown in Figures 25A and 25B will be described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of the arrangement of sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0474] Examples of the top surface shape of the subpixel include polygons such as triangles, quadrilaterals (including rectangles and squares), and pentagons, as well as polygons with rounded corners, ellipses, and circles. Here, the top surface shape of the subpixel corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0475] A stripe arrangement is applied to pixel 180 shown in Fig. 27A. Pixel 180 shown in Fig. 27A is composed of three subpixels: subpixel 180a, subpixel 180b, and subpixel 180c. For example, as shown in Fig. 28A, subpixel 180a may be a red subpixel R, subpixel 180b may be a green subpixel G, and subpixel 180c may be a blue subpixel B.

[0476] An S-stripe arrangement is applied to pixel 180 shown in Fig. 27B. Pixel 180 shown in Fig. 27B is composed of three subpixels: subpixel 180a, subpixel 180b, and subpixel 180c. For example, as shown in Fig. 28B, subpixel 180a may be a blue subpixel B, subpixel 180b may be a red subpixel R, and subpixel 180c may be a green subpixel G.

[0477] 27C shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper edges of two subpixels aligned in the column direction (e.g., subpixels 180a and 180b, or subpixels 180b and 180c) are misaligned. For example, as shown in FIG. 28C , subpixel 180a may be a red subpixel R, subpixel 180b may be a green subpixel G, and subpixel 180c may be a blue subpixel B.

[0478] The pixel 180 shown in FIG. 27D includes subpixel 180a having a generally trapezoidal top surface shape with rounded corners, subpixel 180b having a generally triangular top surface shape with rounded corners, and subpixel 180c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, subpixel 180a has a larger light-emitting area than subpixel 180b. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size can be. For example, as shown in FIG. 28D, subpixel 180a may be a green subpixel G, subpixel 180b may be a red subpixel R, and subpixel 180c may be a blue subpixel B.

[0479] The Pentile arrangement is applied to pixels 170A and 170B shown in Figure 27E. Figure 27E shows an example in which pixel 170A having subpixels 180a and 180b and pixel 170B having subpixels 180b and 180c are arranged alternately. For example, as shown in Figure 28E, subpixel 180a may be a red subpixel R, subpixel 180b may be a green subpixel G, and subpixel 180c may be a blue subpixel B.

[0480] Pixels 170A and 170B shown in Figures 27F and 27G are arranged in a delta configuration. Pixel 170A has two subpixels (subpixels 180a and 180b) in the top row (first row) and one subpixel (subpixel 180c) in the bottom row (second row). Pixel 170B has one subpixel (subpixel 180c) in the top row (first row) and two subpixels (subpixels 180a and 180b) in the bottom row (second row). For example, as shown in Figure 28F, subpixel 180a may be a red subpixel R, subpixel 180b may be a green subpixel G, and subpixel 180c may be a blue subpixel B.

[0481] FIG. 27F shows an example in which each subpixel has a substantially rectangular top surface shape with rounded corners, and FIG. 27G shows an example in which each subpixel has a circular top surface shape.

[0482] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, or a circle.

[0483] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, or a circle. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0484] In order to form the top surface of the EL layer into a desired shape, a technique for correcting the mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0485] The pixel 180 shown in FIGS. 29A to 29C is configured in a stripe arrangement.

[0486] Figure 29A is an example in which each subpixel has a rectangular top surface shape, Figure 29B is an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and Figure 29C is an example in which each subpixel has an elliptical top surface shape.

[0487] The pixels 180 shown in FIGS. 29D to 29F are arranged in a matrix.

[0488] Figure 29D is an example in which each sub-pixel has a square top surface shape, Figure 29E is an example in which each sub-pixel has an approximately square top surface shape with rounded corners, and Figure 29F is an example in which each sub-pixel has a circular top surface shape.

[0489] The pixel 180 shown in Figures 29A to 29F is composed of four subpixels: subpixel 180a, subpixel 180b, subpixel 180c, and subpixel 180d. The subpixels 180a, 180b, 180c, and 180d each emit light of a different color. For example, as shown in Figures 30A and 30B, the subpixels 180a, 180b, 180c, and 180d can be red, green, blue, and white subpixels, respectively. Alternatively, the subpixels 180a, 180b, 180c, and 180d can be red, green, blue, and infrared emitting subpixels, respectively.

[0490] The subpixel 180d includes a light-emitting device. For example, the light-emitting device includes a pixel electrode, an EL layer, and a conductor 121CM that functions as a common electrode. Note that the pixel electrode may be formed using the same material as the conductors 121a, 121b, 121c, 122a, 122b, and 122c. The EL layer may be formed using the same material as the EL layers 141a, 141b, and 141c.

[0491] FIG. 29G shows an example in which one pixel 180 is configured with two rows and three columns. The pixel 180 has three subpixels (subpixels 180a, 180b, and 180c) in the top row (first row) and three subpixels 180d in the bottom row (second row). In other words, the pixel 180 has subpixels 180a and 180d in the left column (first column), subpixels 180b and 180d in the center column (second column), and subpixels 180c and 180d in the right column (third column). As shown in FIG. 29G, by aligning the subpixels in the top row and bottom row, it is possible to efficiently remove dust and other impurities that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0492] 29H shows an example in which one pixel 180 is configured with two rows and three columns. The pixel 180 has three subpixels (subpixels 180a, 180b, and 180c) in the top row (first row) and one subpixel (subpixel 180d) in the bottom row (second row). In other words, the pixel 180 has subpixel 180a in the left column (first column), subpixel 180b in the center column (second column), subpixel 180c in the right column (third column), and subpixel 180d across these three columns.

[0493] In addition, in the pixel 180 shown in Figures 29G and 29H, for example, as shown in Figures 30C and 30D, the subpixel 180a can be a red subpixel R, the subpixel 180b can be a green subpixel G, the subpixel 180c can be a blue subpixel B, and the subpixel 180d can be a white subpixel W.

[0494] The display device according to one embodiment of the present invention may include a light-receiving device in a pixel.

[0495] Of the four sub-pixels included in pixel 180 shown in FIG. 29G, three may be configured to have a light-emitting device, and the remaining one may be configured to have a light-receiving device.

[0496] The light receiving device may be, for example, a pn-type or pin-type light receiving device. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0497] In particular, it is preferable to use an organic light-receiving device having a layer containing an organic compound as the light-receiving device. The organic light-receiving device can be easily made thin, lightweight, and large in area, and has a high degree of freedom in shape and design, so it can be applied to various display devices.

[0498] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic light-receiving device is used as the light-receiving device. The organic EL device and the organic light-receiving device can be formed on the same substrate. Therefore, the organic light-receiving device can be built into a display device using the organic EL device.

[0499] The light-receiving device has an active layer that functions as at least a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode and the other as a common electrode.

[0500] For example, the subpixels 180a, 180b, and 180c may each be a subpixel of three colors, red (R), green (G), and blue (B), and the subpixel 180d may be a subpixel having a light-receiving device. In this case, the fourth layer has at least an active layer.

[0501] Of the pair of electrodes that a light-receiving device has, one electrode functions as an anode and the other electrode functions as a cathode. The following describes an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode. The light-receiving device can detect light incident on the light-receiving device, generate electric charges, and extract them as a current by applying a reverse bias between the pixel electrode and the common electrode. Alternatively, the pixel electrode may function as a cathode and the common electrode may function as an anode.

[0502] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called a photoelectric conversion layer) of the light-receiving device is not formed by a metal mask pattern, but is formed by forming a film that will become the active layer on the entire surface and then processing it, so that the island-shaped active layer can be formed with a uniform thickness. Furthermore, by providing a sacrificial layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0503] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same function in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0504] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0505] The n-type semiconductor material of the active layer is fullerene (e.g., C ６０ , and C ７０ Examples of electron-accepting organic semiconductor materials include fullerene derivatives and fullerenes. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital) levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving devices. C ６０ , and C ７０Both have a wide absorption band in the visible light region, and C ７０ is C ６０ As compared with the fullerene derivatives, the π-electron conjugated system is larger and has a wide absorption band in the long wavelength region, which is preferable. Other fullerene derivatives include, for example, [6,6]-Phenyl-C71-butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butylic acid methyl ester (abbreviation: PC60BM), and 1',1",4',4"-Tetrahydro-di[1,4]methanenaphthaleno[1,2:2',3',56,60:2"3"][5,6]fullerene-C60 (abbreviation: ICBA).

[0506] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0507] Examples of the p-type semiconductor material contained in the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanethene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0508] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0509] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0510] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0511] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0512] The light-receiving device may further include a layer containing a substance with high hole-transporting properties, a substance with high electron-transporting properties, or a bipolar substance (a substance with high electron-transporting properties and high hole-transporting properties) as a layer other than the active layer. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing one or more materials selected from a substance with high hole-injecting properties, a hole-blocking material, a material with high electron-injecting properties, and an electron-blocking material.

[0513] The light-receiving device may be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device may be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0514] For example, the hole transport material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI).The electron transport material may be an inorganic compound such as zinc oxide (ZnO).

[0515] The active layer may contain a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative may be used.

[0516] The active layer may also contain a mixture of three or more materials. For example, in order to broaden the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0517] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0518] A display device according to one embodiment of the present invention has a display portion in which light-emitting devices are arranged in a matrix, and can display an image on the display portion. Furthermore, light-receiving devices are arranged in a matrix on the display portion, and the display portion has an imaging function and / or a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can use a light-emitting device as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced.

[0519] In a display device of one embodiment of the present invention, when light emitted from a light-emitting device included in a display portion is reflected (or scattered) by an object, the light-receiving device can detect the reflected light (or scattered light). Therefore, imaging or touch detection is possible even in a dark place.

[0520] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0521] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0522] Furthermore, when the light-receiving device is used as a touch sensor, the display device can detect the proximity or contact of an object using the light-receiving device.

[0523] The pixel shown in FIGS. 31A to 31D has subpixels G, B, R, and PS.

[0524] A stripe arrangement is applied to the pixels shown in Fig. 31A, and a matrix arrangement is applied to the pixels shown in Fig. 31B.

[0525] 31C and 31D show an example in which one pixel is arranged across two rows and three columns. The top row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R). In FIG. 31C, the bottom row (second row) has three subpixels PS. Meanwhile, in FIG. 31D, the bottom row (second row) has two subpixels PS. By aligning the subpixels in the top and bottom rows as shown in FIG. 31C, it is possible to efficiently remove foreign matter, such as dust, that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided. The subpixel layout is not limited to the configurations shown in FIGS. 31A to 31D.

[0526] Each of the subpixels R, G, and B has a light-emitting device that emits white light. In the subpixels R, G, and B, a corresponding colored layer is provided so as to overlap the light-emitting device.

[0527] The subpixels PS each have a light receiving device. The wavelength of light detected by the subpixels PS is not particularly limited.

[0528] The light receiving device included in the subpixel PS preferably detects visible light, for example, one or more of blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. The light receiving device included in the subpixel PS may also detect infrared light.

[0529] The display device 1000 shown in FIG. 31E has, between a substrate 351 and a substrate 359, a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device.

[0530] The functional layer 355 includes a circuit for driving the light-receiving device and a circuit for driving the light-emitting device. The functional layer 355 may be provided with, for example, a switch, a transistor, a capacitor, a resistor, wiring, and a terminal. Note that when the light-emitting device and the light-receiving device are driven by a passive matrix method, a configuration without a switch and a transistor may be used.

[0531] 31E , light emitted from the light-emitting device in the layer 357 having the light-emitting device is reflected by the human eye and its surroundings, and the reflected light is detected by the light-receiving device in the layer 353 having the light-receiving device. This makes it possible to detect information about the surroundings, surface, or inside of the human eye (for example, the number of blinks, the movement of the eyeball, and the movement of the eyelid).

[0532] The insulators, conductors, and semiconductors disclosed in this specification and the like can be formed by a PVD (Physical Vapor Deposition) method or a CVD method. Examples of PVD methods include sputtering, resistance heating evaporation, electron beam evaporation, and PLD. Examples of CVD methods include plasma CVD and thermal CVD. In particular, examples of thermal CVD methods include MOCVD (Metal Organic Chemical Vapor Deposition) and ALD.

[0533] The thermal CVD method is a film formation method that does not use plasma, and therefore has the advantage that defects caused by plasma damage are not generated.

[0534] In the thermal CVD method, a source gas and an oxidizing agent are simultaneously fed into a chamber, the chamber is kept at atmospheric pressure or reduced pressure, and the reaction occurs near or on a substrate, resulting in deposition on the substrate, thereby forming a film.

[0535] Alternatively, the ALD method may be used to deposit a film by sequentially introducing source gases for reaction into a chamber under atmospheric or reduced pressure and repeating this gas introduction sequence. For example, two or more source gases are sequentially supplied to the chamber by switching between switching valves (also called high-speed valves). An inert gas (e.g., argon or nitrogen) is introduced simultaneously with or after the first source gas to prevent mixing of the multiple source gases, followed by the introduction of the second source gas. When an inert gas is introduced simultaneously, the inert gas acts as a carrier gas, and may also be introduced simultaneously with the introduction of the second source gas. Alternatively, instead of introducing an inert gas, the first source gas may be evacuated by vacuum evacuation before the introduction of the second source gas. The first source gas adsorbs on the substrate surface to form a first thin layer, which then reacts with the second source gas introduced later, resulting in the second thin layer being deposited on the first thin layer to form a thin film. Repeating this gas introduction sequence multiple times while controlling the gas introduction sequence until the desired thickness is achieved allows the formation of a thin film with excellent step coverage. The thickness of the thin film can be adjusted by changing the number of times the gas introduction sequence is repeated, allowing for precise film thickness adjustment, making this method suitable for fabricating fine FETs.

[0536] Thermal CVD methods such as MOCVD and ALD can form various films such as metal films, semiconductor films, or inorganic insulating films disclosed in the embodiments described above. For example, when forming an In—Ga—Zn—O film, trimethylindium (In(CH ３ ) ３ ), trimethylgallium (Ga(CH ３ ) ３ ), and dimethylzinc (Zn(CH ３ ) ２ In addition, the combination is not limited to these, and trimethylgallium may be replaced with triethylgallium (Ga(C ２ H ５ ) ３ ) can also be used, and diethyl zinc (Zn(C) ２ H ５ ) ２ ) can also be used.

[0537] For example, when a hafnium oxide film is formed using a film forming apparatus that uses the ALD method, a solvent and a liquid containing a hafnium precursor compound (e.g., hafnium alkoxide, tetrakisdimethylamidohafnium (TDMAH), Hf[N(CH ３ ) ２ ] ４ The raw material gas is a vaporized hafnium amide (such as ozone) as an oxidizer. ３ ) and tetrakis(ethylmethylamido)hafnium are used.

[0538] For example, when an aluminum oxide film is formed using a film forming apparatus that uses the ALD method, a liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA), Al(CH ３ ) ３ )) as a raw material gas, and H as an oxidant. ２ Two types of gases are used: O and O. Other materials include, for example, tris(dimethylamido)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

[0539] For example, when a silicon oxide film is formed using a film forming apparatus that uses the ALD method, hexachlorodisilane is adsorbed on the surface to be formed, and an oxidizing gas (e.g., O ２ , and nitrous oxide) to react with the adsorbate.

[0540] For example, when a tungsten film is formed using a film forming apparatus that uses the ALD method, WF ６ Gas and B ２ H ６ The gases are introduced repeatedly in sequence to form an initial tungsten film, and then WF ６ Gas and H ２ The gases are introduced repeatedly in sequence to form a tungsten film. ２ H ６ Instead of gas, SiH ４ A gas may also be used.

[0541] For example, when an In—Ga—Zn—O film is formed as an oxide semiconductor film by a film formation apparatus using the ALD method, a precursor (generally, it may be called, for example, a precursor or a metal precursor) and an oxidizing agent (generally, it may be called, for example, a reactant or a non-metal precursor) are sequentially and repeatedly introduced to form the oxide semiconductor film. Specifically, for example, a precursor, In(CH ３ ) ３ gas and oxidizer O ３ The gas is introduced to form an In—O layer, and then the precursor Ga(CH ３ ) ３ gas and oxidizer O ３ The gas is introduced to form a GaO layer, and then the precursor Zn(CH ３ ) ２ gas and oxidizer O ３ The gas is introduced to form a ZnO layer. Note that the order of these layers is not limited to this example. Also, mixed oxide layers such as an In—Ga—O layer, an In—Zn—O layer, or a Ga—Zn—O layer may be formed using these gases. ３ Instead of gas, H obtained by bubbling water with an inert gas such as Ar ２ O gas may be used, but O gas containing no H ３ It is preferable to use In(CH ３ ) ３ Instead of gas, In(C ２ H ５ ) ３ Gas may also be used. ３ ) ３ Instead of gas, Ga(C ２ H ５ ) ３ Gas may also be used. ３ ) ２ Gas may also be used.

[0542] The screen ratio (aspect ratio) of the display unit included in the electronic device of one embodiment of the present invention is not particularly limited. For example, the display unit can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0543] The shape of the display unit included in the electronic device of one embodiment of the present invention is not particularly limited. For example, the display unit can have various shapes such as a rectangular shape, a polygonal shape (e.g., an octagonal shape), a circular shape, and an elliptical shape.

[0544] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0545] Embodiment 5 In this embodiment, a display module that can be applied to an electronic device of one embodiment of the present invention will be described.

[0546] <Configuration Example of Display Module> First, a display module including a display device that can be applied to an electronic device of one embodiment of the present invention will be described.

[0547] 32A shows a perspective view of a display module 1280. The display module 1280 includes the display device 1000 and an FPC 1290.

[0548] The display module 1280 includes a substrate 1291 and a substrate 1292. The display module 1280 includes a display portion 1281. The display portion 1281 is a region for displaying an image in the display module 1280, and is a region where light from each pixel provided in a pixel portion 1284 described later can be viewed.

[0549] 32B is a perspective view schematically showing the configuration on the substrate 1291 side. A circuit portion 1282, a pixel circuit portion 1283 on the circuit portion 1282, and a pixel portion 1284 on the pixel circuit portion 1283 are stacked on the substrate 1291. A terminal portion 1285 for connecting to the FPC 1290 is provided in a portion of the substrate 1291 that does not overlap with the pixel portion 1284. The terminal portion 1285 and the circuit portion 1282 are electrically connected by a wiring portion 1286 composed of a plurality of wirings.

[0550] The pixel section 1284 and the pixel circuit section 1283 correspond to, for example, the pixel layer PXAL described above, and the circuit section 1282 corresponds to, for example, the circuit layer SICL described above.

[0551] The pixel section 1284 has a plurality of periodically arranged pixels 1284a. An enlarged view of one pixel 1284a is shown on the right side of FIG. 32B . The pixel 1284a has a light-emitting device 1430a, a light-emitting device 1430b, and a light-emitting device 1430c, each emitting a different light color. Note that the light-emitting devices 1430a, 1430b, and 1430c (e.g., the plurality of light-emitting devices corresponding to the light-emitting devices 150a, 150b, and 150c) may be arranged in a stripe array as shown in FIG. 32B . Various arrangement methods, such as a delta array and a pentile array, may also be applied.

[0552] The pixel circuit section 1283 has a plurality of pixel circuits 1283a arranged periodically.

[0553] One pixel circuit 1283a is a circuit that controls the light emission of three light-emitting devices included in one pixel 1284a. One pixel circuit 1283a may be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 1283a may be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active matrix display device.

[0554] The circuit portion 1282 includes a circuit for driving each pixel circuit 1283a of the pixel circuit portion 1283. For example, it preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, it may include one or more selected from an arithmetic circuit, a memory circuit, and a power supply circuit.

[0555] The FPC 1290 functions as a wiring for supplying a video signal or a power supply potential from the outside to the circuit portion 1282. An IC may be mounted on the FPC 1290.

[0556] The display module 1280 can have a configuration in which one or both of the pixel circuit portion 1283 and the circuit portion 1282 are stacked below the pixel portion 1284, thereby enabling the aperture ratio (effective display area ratio) of the display portion 1281 to be extremely high. For example, the aperture ratio of the display portion 1281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 1284a can be arranged at extremely high density, enabling the resolution of the display portion 1281 to be extremely high. For example, it is preferable that the pixels 1284a be arranged in the display portion 1281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and further preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0557] Such a display module 1280 has extremely high resolution and can therefore be suitably used in VR devices such as head-mounted displays or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 1280 is viewed through lenses, the display module 1280 has an extremely high-resolution display unit 1281, so that even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 1280 is not limited to this, and can be suitably used in electronic devices having relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0558] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0559] Embodiment 6 In this embodiment, examples of electronic devices to which a display device is applied will be described as electronic devices according to one embodiment of the present invention.

[0560] 33A and 33B show the appearance of an electronic device 8300 that is a head-mounted display.

[0561] The electronic device 8300 includes a housing 8301 , a display portion 8302 , operation buttons 8303 , and a band-shaped fixture 8304 .

[0562] The operation button 8303 has a function of a power button, etc. The electronic device 8300 may have a button in addition to the operation button 8303.

[0563] 33C , a lens 8305 may be provided between the display portion 8302 and the user's eyes. The lens 8305 allows the user to enlarge the display portion 8302, thereby enhancing the sense of realism. In this case, as shown in FIG. 33C , a dial 8306 may be provided to change the position of the lens for diopter adjustment.

[0564] For example, a display device with extremely high definition is preferably used as the display portion 8302. By using a display device with high definition for the display portion 8302, even if an image is enlarged using a lens 8305 as in Fig. 33C , pixels are not visible to the user, and a more realistic image can be displayed.

[0565] 33A to 33C show an example in which one display unit 8302 is included. With such a configuration, the number of parts can be reduced.

[0566] The display portion 8302 can display two images, an image for the right eye and an image for the left eye, side by side in two regions, left and right, respectively, thereby displaying a stereoscopic image using binocular parallax.

[0567] Alternatively, a single image that can be viewed by both eyes may be displayed across the entire area of ​​the display unit 8302. This allows a panoramic image to be displayed across both ends of the field of view, thereby enhancing the sense of reality.

[0568] Here, the electronic device 8300 preferably has a mechanism for changing the curvature of the display portion 8302 to an appropriate value depending on, for example, one or more selected from the size of the user's head or the position of the user's eyes. For example, the user may adjust the curvature of the display portion 8302 by operating a dial 8307 for adjusting the curvature of the display portion 8302. Alternatively, the electronic device 8300 may have a mechanism for adjusting the curvature of the display portion 8302 based on detection data from a sensor (for example, a camera, a contact sensor, or a non-contact sensor) provided in the housing 8301 to detect the size of the user's head or the position of the user's eyes.

[0569] In addition, when the lens 8305 is used, it is preferable to provide a mechanism for adjusting the position and angle of the lens 8305 in synchronization with the curvature of the display portion 8302. Alternatively, the dial 8306 may have a function for adjusting the angle of the lens.

[0570] 33E and 33F show an example including a driver 8308 that controls the curvature of the display portion 8302. The driver 8308 is fixed to at least a part of the display portion 8302. The driver 8308 has a function of deforming the display portion 8302 by deforming or moving a part fixed to the display portion 8302.

[0571] 33E is a schematic diagram showing a case where a user 8310 with a relatively large head size is wearing the housing 8301. In this case, the shape of the display portion 8302 is adjusted by the driving unit 8308 so that the curvature is relatively small (the radius of curvature is large).

[0572] On the other hand, Figure 33F shows a case where a user 8311, whose head is smaller than that of the user 8310, is wearing the housing 8301. The user 8311 has a smaller eye distance than the user 8310. In this case, the shape of the display unit 8302 is adjusted by the drive unit 8308 so that the curvature of the display unit 8302 is larger (the radius of curvature is smaller). In Figure 33F, the position and shape of the display unit 8302 in Figure 33E are indicated by dashed lines.

[0573] In this way, the electronic device 8300 has a mechanism for adjusting the curvature of the display portion 8302, so that it can provide an optimal display to various users, regardless of age or gender.

[0574] Furthermore, by changing the curvature of the display portion 8302 in accordance with the content displayed on the display portion 8302, a high sense of realism can be given to the user. For example, shaking can be expressed by vibrating the curvature of the display portion 8302. In this way, various effects can be produced according to the scene in the content, and a new experience can be provided to the user. Furthermore, by linking the display portion 8302 with a vibration module provided in the housing 8301, a more realistic display can be achieved.

[0575] Note that the electronic device 8300 may have two display units 8302 as shown in FIG. 33D.

[0576] By having two display units 8302, the user can view one display unit per eye. This allows high-resolution images to be displayed even when performing 3D display using parallax. Furthermore, the display unit 8302 is curved in an arc shape roughly centered on the user's eye. This allows the distance from the user's eye to the display surface of the display unit to be constant, allowing the user to view more natural images. Furthermore, even if the brightness and chromaticity of light from the display unit change depending on the viewing angle, this effect can be substantially ignored because the user's eye is positioned in the normal direction to the display surface of the display unit, allowing for more realistic images to be displayed.

[0577] 34A to 34C are diagrams showing the appearance of electronic device 8300, which is different from electronic device 8300 shown in each of Figures 33A to 33D. Specifically, for example, Figures 34A to 34C differ from Figures 33A to 33D in that electronic device 8300 has a fixture 8304a that is attached to the head and a pair of lenses 8305.

[0578] A user can view the display on the display portion 8302 through the lens 8305. Note that it is preferable to curve the display portion 8302 because the user can feel a high sense of presence. In addition, by viewing different images displayed in different regions of the display portion 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the configuration is not limited to one display portion 8302, and two display portions 8302 may be provided, with one display portion being arranged for each eye of the user.

[0579] Note that, for example, a display device with extremely high definition is preferably used for the display portion 8302. By using a display device with high definition for the display portion 8302, even if an image is enlarged using a lens 8305 as in Fig. 34C , pixels are not visible to the user, and a more realistic image can be displayed.

[0580] Furthermore, a head-mounted display which is an electronic device of one embodiment of the present invention may have the structure of an electronic device 8200 which is a glasses-type head-mounted display illustrated in FIG. 34D.

[0581] The electronic device 8200 includes a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, and a cable 8205. The mounting portion 8201 has a built-in battery 8206.

[0582] A cable 8205 supplies power from a battery 8206 to the main body 8203. The main body 8203 includes a wireless receiver and can display received video information on a display portion 8204. The main body 8203 also includes a camera and can use information on the movement of the user's eyeballs or eyelids as an input means.

[0583] The wearing unit 8201 may be provided with a plurality of electrodes at positions that come into contact with the user, capable of detecting a current that flows in association with the movement of the user's eyeballs, and may have a function of recognizing the line of sight. The wearing unit 8201 may also have a function of monitoring the user's pulse based on the current that flows through the electrodes. The wearing unit 8201 may also have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function of displaying biometric information of the user on the display unit 8204, a function of changing an image displayed on the display unit 8204 in accordance with the movement of the user's head, and the like.

[0584] 35A to 35C are diagrams showing the appearance of an electronic device 8750, which is different from the electronic device 8300 shown in FIGS. 33A to 33D and the electronic device 8200 shown in FIG. 34D, respectively.

[0585] 35A is a perspective view showing the front, top, and left side of electronic device 8750, and FIGS. 35B and 35C are perspective views showing the back, bottom, and right side of electronic device 8750. FIG.

[0586] The electronic device 8750 includes a pair of display devices 8751, a housing 8752, a pair of mounting portions 8754, a buffer member 8755, and a pair of lenses 8756. The pair of display devices 8751 are provided inside the housing 8752 at positions where they can be seen through the lenses 8756.

[0587] Here, one of the pair of display devices 8751 corresponds to the display device DSP shown in FIG. 13 . Although not shown, the electronic device 8750 shown in FIGS. 35A to 35C includes electronic components having the processing units described in the previous embodiments (e.g., circuits included in the functional circuit region MFNC and the driver circuit region DRV shown in FIG. 13 ). Although not shown, the electronic device 8750 shown in FIGS. 35A to 35C includes a camera (e.g., the sensor PDA shown in FIG. 13 ). The camera can capture an image of the user's eye and its vicinity. Although not shown, the electronic device 8750 shown in FIGS. 35A to 35C includes a motion detection unit, audio, a control unit, a communication unit, and a battery in a housing 8752.

[0588] The electronic device 8750 is an electronic device for VR. A user wearing the electronic device 8750 can view an image displayed on a display device 8751 through a lens 8756. Also, by displaying different images on the pair of display devices 8751, three-dimensional display using parallax can be performed.

[0589] An input terminal 8757 and an output terminal 8758 are provided on the back side of the housing 8752. The input terminal 8757 can be connected to a cable for supplying a video signal from a video output device or power for charging a battery provided in the housing 8752. The output terminal 8758 functions as, for example, an audio output terminal, and earphones or headphones can be connected to the output terminal 8758.

[0590] The housing 8752 preferably has a mechanism for adjusting the left and right positions of the lens 8756 and the display device 8751 so that they are optimally positioned according to the position of the user's eyes. Also, the housing 8752 preferably has a mechanism for adjusting the focus by changing the distance between the lens 8756 and the display device 8751.

[0591] By using the camera, the display device 8751, and the electronic components, the electronic device 8750 can estimate the state of a user of the electronic device 8750 and display information relating to the estimated state of the user on the display device 8751. Alternatively, information relating to the state of a user of an electronic device connected to the electronic device 8750 via a network can be displayed on the display device 8751.

[0592] The buffer member 8755 is a portion that comes into contact with the user's face (e.g., the forehead and cheeks). The close contact of the buffer member 8755 with the user's face can prevent light leakage and enhance the sense of immersion. The buffer member 8755 is preferably made of a soft material so that it can be in close contact with the user's face when the user wears the electronic device 8750. Materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, using a sponge whose surface is covered with cloth or leather (e.g., natural leather and synthetic leather) can prevent gaps from forming between the user's face and the buffer member 8755, thereby favorably preventing light leakage. Furthermore, using such a material is preferable because it feels pleasant to the touch and prevents the user from feeling cold when worn in cold seasons. It is preferable that components that come into contact with the user's skin, such as the buffer member 8755 or the attachment portion 8754, be removable for easy cleaning or replacement.

[0593] The electronic device of this embodiment may further include an earphone 8754A. The earphone 8754A has a communication unit (not shown) and has a wireless communication function. The earphone 8754A can output audio data using the wireless communication function. The earphone 8754A may also have a vibration mechanism that functions as a bone conduction earphone.

[0594] 35C, the earphone 8754A can be directly connected to the attachment portion 8754 or connected by wire. The earphone 8754B and the attachment portion 8754 may have a magnet. This allows the earphone 8754B to be fixed to the attachment portion 8754 by magnetic force, which is preferable because it makes storage easier.

[0595] The earphone 8754A may have a sensor unit that can be used to estimate the state of the user of the electronic device.

[0596] In addition to any one of the above-described configuration examples, the electronic device of one embodiment of the present invention may include one or more selected from an antenna, a battery, a camera, a speaker, a microphone, a touch sensor, and an operation button.

[0597] The electronic device of one embodiment of the present invention may include a secondary battery, and it is preferable that the secondary battery can be charged using contactless power transmission.

[0598] Examples of secondary batteries include lithium ion secondary batteries (e.g., lithium polymer batteries (lithium ion polymer batteries) using a gel electrolyte), nickel-metal hydride batteries, nickel-cadmium batteries, organic radical batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, and silver-zinc batteries.

[0599] The electronic device of one embodiment of the present invention may include an antenna. By receiving a signal through the antenna, images and information can be displayed on a display portion. When the electronic device includes an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0600] The display portion of the electronic device according to one embodiment of the present invention can display images with a resolution of, for example, full high definition, 4K2K, 8K4K, 16K8K, or higher.

[0601] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0602] DSP: display device, DSP_L: display device, DSP_R: display device, PUa: pixel circuit, PUb: pixel circuit, LNS: lens, BW: bus wiring, ME: eye, YH: macula, CSK: fovea, MM: retina, MK: blood vessel, DIM: displayed image, TIM: captured image, WK: frame, WD: area, VCL: moving object, HDL: handle, PIL: pillar, S61: step, S62: step, S63: step, S64: step, S71: step, S72: step, PXAL: pixel layer, LINL: wiring layer, SICL: circuit layer, MFNC: functional circuit area, DRV: drive Circuit area, DRV1: driver circuit area, DRV2: driver circuit area, BS: substrate, DIS: display unit, SIC: circuit unit, PDA: sensor, PU: circuit, PX: circuit, PD: circuit, SL: wiring, GL: wiring, CL: wiring, TXL: wiring, POL: wiring, SNCL: wiring, BSL: bus wiring, ALP: array unit, ILD: circuit, WLD: circuit, XLD: circuit, AFP: circuit, MP: circuit, MP[1,1]: circuit, MP[m,1]: circuit, MP[1,n]: circuit, MP[m,n]: circuit, MC: circuit, MCr: circuit, HC: circuit, HCr: circuit, ACTF[1]: circuit ,ACTF[j]: circuit,ACTF[n]: circuit,M1: transistor,M2: transistor,M3: transistor,M4: transistor,M1r: transistor,M2r: transistor,M3r: transistor,M4r: transistor,C1: capacitance,C1r: capacitance,n1: node,n1r: node,WL: wiring,WL[1]: wiring,WL[i]: wiring,WL[m]: wiring,WX1L: wiring,WX1L[1]: wiring,WX1L[i]: wiring,WX1L[m]: wiring,X2L: wiring,X2L[1]: wiring,X2L[i]: wiring,X2L[m]: wiring,OL: Wiring, OL[1]: wiring, OL[j]: wiring, OL[n]: wiring, OLB: wiring, OLB[1]: wiring, OLB[j]: wiring, OLB[n]: wiring, ZL[1]: wiring, ZL[j]: wiring, ZL[n]: wiring, VE: wiring, VER: wiring, GL1: wiring, GL2: wiring, GL3: wiring, ANO: wiring, VCOM: wiring, V0: wiring, EML: layer, OSL: layer, 10R: light-emitting device, 10G: light-emitting device, 10B: light-emitting device, 10LS: light-emitting device, 10PS: light-receiving device, 11: substrate, 12: substrate, 13: support plate, 15: protective member, 16: layer,19: pixel region, 20: driver circuit section, 22: frame memory, 50: electronic device, 51_L: optical system, 51_R: optical system, 52: image processing section, 53: motion detection section, 54: audio, 55: camera, 56: control section, 57: communication section, 58: battery, 61: source driver circuit, 62: digital-to-analog conversion circuit, 63...

Claims

1. comprising a display device, an image processing unit, and a control unit; said display device having a light emitting device and a light receiving device; said light emitting device having a function of emitting light to a user's eye as a display image; said light receiving device having a function of imaging the retina of the user's eye as a captured image; said image processing unit having a function of detecting a macula included in the retina from the captured image and a function of calculating position data of the macula; said control unit having a function of obtaining a position of a user's line of sight on the display image from the position data of the macula and updating the display image according to the position; said image processing unit having a function of detecting an out-of-focus object included in the captured image from the captured image and detecting a blink of the user; the update content of the display image being different between when the user blinks briefly and when the user blinks for a long time; An electronic device.

2. In claim 1, said image processing unit having a sum-of-products operation circuit and a circuit for performing an operation of an activation function; An electronic device.

3. having a display device, said display device having a light emitting device, a light receiving device, an image processing unit, and a control unit, and being a method of operating an electronic device, having a first step, a second step, a third step, a fourth step, a fifth step, and a sixth step, said first step having a step of illuminating the retina of the user's eye with light from the light emitting device as a display image; said second step having a step of imaging light reflected from the retina with the light receiving device as a captured image; said third step having a step of the image processing unit obtaining coordinates of a macula included in the retina from the captured image; The fourth step includes the control unit obtaining the position of the user's line of sight on the display image from the coordinates of the macula, and updating the display image according to the position. The fifth step includes the image processing unit detecting a defocused area included in the captured image and detecting the user's blink. The sixth step includes updating the display image when the user's blink is detected in the fifth step. The update content of the display image is different when the user blinks briefly and when the user blinks for a long time. An operation method of an electronic device.

4. In claim 3, The image processing unit includes a multiplication and accumulation circuit and a circuit that performs an operation of an activation function. An operation method of an electronic device.