Display device and electronic equipment

Abstract

The present invention provides a display device having an imaging function. The display device includes a first pixel and a second pixel, wherein: the first pixel includes a light-emitting device; the second pixel includes a light-receiving device and a lens; the light-emitting device and the light-receiving device include an electrode used in common; the lens and the light-receiving device include areas overlapping with each other; the width of the lens is greater than the width of a light-receiving portion of the light-receiving device; the cross-section of the lens in a thickness direction including an optical axis is of a substantially trapezoidal shape; a surface of the lens including the legs of the substantially trapezoidal shape is a convex surface; a surface of the lens including the upper base of the substantially trapezoidal shape and the light-receiving portion are provided so as to face each other; and the first pixel and the second pixel are provided adjacent to each other.

Description

Display device and electronic device

[0001] One aspect of the present invention relates to a display device.

[0002] One embodiment of the present invention is not limited to the above technical field, and examples of the technical field of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), driving methods thereof, and manufacturing methods thereof.

[0003] In recent years, display devices have been used in a variety of applications. Examples of applications of large display devices include home televisions, digital signage, and public information displays (PIDs). Display devices are also widely used in smartphones and tablet devices equipped with touch panels.

[0004] There is also a demand for higher resolution display devices. High-resolution display devices are required for, for example, virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR).

[0005] Light-emitting devices having light-emitting devices (also referred to as light-emitting elements) have been developed as display devices. Light-emitting devices (also referred to as EL devices or EL elements) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon have the following characteristics: they are easily made thin and lightweight, can respond quickly to input signals, and can be driven using a DC constant voltage power supply.

[0006] Patent Document 1 discloses a display device for VR that uses an organic EL device (also called an organic EL element).

[0007] Furthermore, in display devices, a structure is also adopted in which light emitted from a light-emitting device is extracted through a microlens in order to improve light extraction efficiency. Patent Document 2 discloses a method for forming a microlens using a radiation-sensitive resin composition.

[0008] International Publication No. 2018 / 087625 Japanese Patent Application Laid-Open No. 2020-101659

[0009] By forming a light-receiving device in the pixel, it is possible to provide the display device with an imaging function. For example, by touching a finger or palm to the panel surface and capturing an image, an image of a fingerprint or palm print can be obtained. The fingerprint or palm print image can be used for personal authentication.

[0010] Here, since the distance between the panel surface and the light-receiving device is short, it is difficult to provide a lens that collects light rays and forms an image. Therefore, it is preferable to form a pinhole on the light-receiving device to reduce the light rays and form an image. When using such a configuration, it is desirable to devise a way to effectively receive light that passes through the pinhole in order to improve light-receiving sensitivity.

[0011] Therefore, an object of one embodiment of the present invention is to provide a display device having an imaging function.An object is to provide a display device having a structure that increases the sensitivity of a light-receiving device.An object is to provide a display device having an authentication function.An object is to provide a high-definition display device.An object is to provide a high-resolution display device.An object is to provide a high-brightness display device.An object is to provide a highly reliable display device.

[0012] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims.

[0013] One embodiment of the present invention is a display device having a first pixel and a second pixel, the first pixel having a light-emitting device, the second pixel having a light-receiving device and a lens, the light-emitting device and the light-receiving device having a shared electrode, the lens and the light-receiving device having an overlapping area, the width of the lens being larger than the width of a light-receiving portion of the light-receiving device, the lens having a cross-sectional shape in the thickness direction including the optical axis being approximately trapezoidal, a surface including a leg of the approximately trapezoid being a convex curved surface, the surface including the upper base of the approximately trapezoid and the light-receiving portion being arranged to face each other, and the first pixel and the second pixel being arranged adjacent to each other.

[0014] It is preferable that a light-shielding layer is formed around the lens.

[0015] In the above lens, the surface including the upper base of the approximately trapezoidal shape may have a convex curved surface.

[0016] The lens and the light receiving device are preferably spaced apart so that their centers overlap.

[0017] Another aspect of the present invention is a display device having a first pixel and a second pixel, the first pixel having a light-emitting device and a first lens, the second pixel having a light-receiving device and a second lens, the light-emitting device and the light-receiving device having a shared electrode, the first lens and the light-emitting device having an overlapping area, the second lens and the light-receiving device having an overlapping area, the width of the first lens being larger than the width of a light-emitting portion of the light-emitting device, the width of the second lens being larger than the width of a light-receiving portion of the light-receiving device, the first lens and the second lens having a cross-sectional shape in a thickness direction including an optical axis that is approximately trapezoidal, a surface including a leg of the approximately trapezoid being a convex curved surface, the surface including the upper base of the approximately trapezoid of the first lens and the light-emitting portion are arranged to face each other, the surface including the upper base of the approximately trapezoid of the second lens and the light-receiving portion are arranged to face each other, and the first pixel and the second pixel are arranged adjacent to each other.

[0018] A light-shielding layer can be formed around the periphery of the first lens and the second lens, or a light-shielding layer can be formed only around the periphery of the second lens.

[0019] In the first lens and the second lens, the surface including the upper base of the substantially trapezoidal shape may have a convex curved surface.

[0020] It is preferable that the first lens and the light-emitting device are spaced apart so that their centers overlap, and that the second lens and the light-receiving device are spaced apart so that their centers overlap.

[0021] The light emitting device may be a tandem type. A tandem type light emitting device has a plurality of light emitting units, and the plurality of light emitting units preferably emit light of the same color.

[0022] Another embodiment of the present invention is an electronic device that includes the above display device, acquires an image of a fingerprint using a light-receiving device, and performs fingerprint authentication.

[0023] According to one embodiment of the present invention, a display device having an imaging function can be provided. A display device having a structure that increases the sensitivity of a light-receiving device can be provided. Alternatively, a display device having an authentication function can be provided. Alternatively, a high-definition display device can be provided. Alternatively, a high-resolution display device can be provided. Alternatively, a high-brightness display device can be provided. Alternatively, a highly reliable display device can be provided.

[0024] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0025] FIG. 1A is a top view illustrating an example of a display device. FIG. 1B is a cross-sectional view illustrating an example of a display device. FIG. 1C is a diagram illustrating a layered structure of a light-emitting unit. FIGS. 2A and 2B are cross-sectional views illustrating elements of a display device. FIGS. 3A and 3B are cross-sectional views illustrating elements of a display device. FIGS. 4A and 4B are cross-sectional views illustrating elements of a display device. FIG. 5A is a top view and a perspective view illustrating elements of a display device. FIG. 5B is a top view and a perspective view illustrating elements of a display device. FIGS. 6A and 6B are top views and a perspective view illustrating elements of a display device. FIGS. 7A and 7B are cross-sectional views illustrating elements of a display device. FIGS. 8A to 8E are diagrams illustrating a simulation model. FIG. 9 is a diagram illustrating simulation results. FIGS. 10A and 10B are cross-sectional views illustrating elements of a display device. FIGS. 11A and 11B are cross-sectional views illustrating elements of a display device. FIGS. 12A to 12F are cross-sectional views illustrating an example of a method for manufacturing a lens. FIGS. 13A to 13C are cross-sectional SEM photographs illustrating a lens. FIGS. 14A to 14K are diagrams illustrating an example of a pixel. FIGS. 15A and 15B are perspective views illustrating an example of a display device. FIG. 16 is a cross-sectional view illustrating an example of a display device. FIG. 17 is a cross-sectional view illustrating an example of a display device. FIG. 18 is a cross-sectional view illustrating an example of a display device. FIG. 19 is a cross-sectional view illustrating an example of a display device. FIG. 20 is a perspective view illustrating an example of a display device. FIG. 21A is a cross-sectional view illustrating an example of a display device. FIGS. 21B and 21C are cross-sectional views illustrating an example of a transistor. FIGS. 22A and 22B are cross-sectional views illustrating an example of a display device. FIGS. 23A and 23B are cross-sectional views illustrating an example of a display device. FIGS. 24A and 24B are cross-sectional views illustrating an example of a display device. FIGS. 25A and 25B are cross-sectional views illustrating an example of a display device. FIGS. 26A to 26C are diagrams illustrating a configuration example of a display device. FIGS. 27A to 27D are diagrams illustrating an example of an electronic device. FIGS. 28A to 28F are diagrams illustrating an example of an electronic device. FIGS. 29A to 29G are diagrams illustrating an example of an electronic device.

[0026] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0027] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0028] Furthermore, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0029] The terms "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0030] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0031] In this specification and the like, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer," and a hole block layer or an electron block layer may be referred to as a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable from each other depending on their cross-sectional shapes or characteristics. Furthermore, one layer may have two or three functions among the carrier injection layer, carrier transport layer, and carrier block layer.

[0032] In this specification and the like, a light-emitting device (also referred to as a light-emitting element) has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. Here, layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier injection layer (a hole injection layer and an electron injection layer), a carrier transport layer (a hole transport layer and an electron transport layer), and a carrier block layer (a hole block layer and an electron block layer). In this specification and the like, a light-receiving device (also referred to as a light-receiving element) has at least an active layer that functions as a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a common electrode, and the other as a pixel electrode.

[0033] In this specification, the term "tapered shape" refers to a shape in which at least a portion of the side surface of the structure is inclined relative to the substrate surface. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface is less than 90°. The side surface of the structure and the substrate surface do not necessarily need to be completely flat, but may be substantially planar with a slight curvature or a slight unevenness.

[0034] In this specification and the like, the mask layer is located above at least the light-emitting layer (more specifically, a layer that is processed into an island shape among the layers that constitute the EL layer) or the active layer, and has the function of protecting the light-emitting layer or the active layer during the manufacturing process. The mask layer may be removed during the manufacturing process, or at least a part of the mask layer may remain.

[0035] Embodiment 1 In this embodiment, a display device according to one embodiment of the present invention will be described with reference to drawings.

[0036] One embodiment of the present invention is a display device that includes a light-emitting device and a light-receiving device manufactured for each light-emitting color and is capable of full-color display and imaging. Note that the light-emitting device may be a tandem type. By using a tandem type light-emitting device, a display device that can display with high luminance and high reliability can be obtained.

[0037] In this specification and the like, a structure in which at least a light-emitting layer is formed separately for each color light-emitting device (for example, blue (B), green (G), and red (R)), or in which the light-emitting layers are painted separately, may be referred to as an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, thereby improving the brightness and reliability of the display device.

[0038] When manufacturing a display device having a plurality of light-emitting devices each emitting a different color of light, the light-emitting layers each emitting a different color of light are formed in an island shape, and in the light-receiving device, the active layer (layer having a photoelectric conversion function) is also formed in an island shape.

[0039] In this specification, the term "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from an adjacent light-emitting layer.

[0040] The island-shaped light-emitting layer and active layer can be formed by vacuum deposition using a metal mask. However, this method can result in deviations from the design in the shape and formation position of the island-shaped light-emitting layer due to factors such as misalignment between the metal mask and the substrate, bending of the metal mask, and wraparound of the deposited material. Therefore, the metal mask formation method is unsuitable for achieving high-definition displays and high aperture ratios. Furthermore, when fabricating large, high-definition displays, there is a concern that the manufacturing yield will be low due to the low dimensional accuracy of the metal mask and deformation due to heat, etc.

[0041] Therefore, when manufacturing a display device according to one embodiment of the present invention, the light-emitting layer and the active layer are processed into a fine pattern using a lithography process and an etching process. Specifically, a pixel electrode is formed for each subpixel, and then a film to be a light-emitting layer or an active layer is formed on the pixel electrodes. The film is then processed using a lithography process and an etching process to form one island-shaped light-emitting layer or an active layer for each pixel electrode. This allows the formation of an island-shaped light-emitting layer or an active layer for each subpixel. Note that in this specification and the like, a subpixel may be simply referred to as a pixel.

[0042] Furthermore, it is preferable to provide a functional layer between the light-emitting layer or the active layer and the pixel electrode. Furthermore, it is preferable to process the functional layer into an island shape in the same pattern as the light-emitting layer or the active layer. Here, the functional layer refers to, for example, a carrier injection layer, a carrier transport layer, or a carrier block layer, more specifically, a hole injection layer, a hole transport layer, an electron block layer, etc.

[0043] When the functional layer is used as a common layer between adjacent subpixels, lateral leakage current may occur due to the functional layer. On the other hand, in the display device of one embodiment of the present invention, the functional layer is processed into an island shape in the same pattern as the light-emitting layer, so that lateral leakage current between adjacent subpixels is substantially not generated or can be made extremely small.

[0044] In a light-emitting device and a light-receiving device that emit light of different colors, some layers can be formed in the same process. In a manufacturing method of a display device according to one embodiment of the present invention, some layers constituting an EL layer of a light-emitting device are formed in an island shape for each light-emitting color. Also, an active layer of a light-receiving device is formed in an island shape. Then, the remaining layers constituting the light-emitting device and the light-receiving device (sometimes referred to as a common layer) and a common electrode (also referred to as an upper electrode) shared by the light-emitting device and the light-receiving device are formed.

[0045] Here, the common layer is a layer with relatively high conductivity. Therefore, when the common layer contacts the side surface of a part of the EL layer formed in an island shape, the side surface of the active layer, or the side surface of the pixel electrode, there is a risk of short-circuiting between the upper and lower layers of the light-emitting device and the light-receiving device. Note that even when the common layer is formed in an island shape and a common electrode is formed in common for each color, there is a risk that the common electrode may cause a short-circuit.

[0046] Therefore, a display device according to one embodiment of the present invention includes an insulating layer that covers at least the side surfaces of the island-shaped light-emitting layer and the active layer. The insulating layer preferably covers part of the top surfaces of the island-shaped light-emitting layer and the active layer.

[0047] This prevents some of the island-shaped EL layers, the active layer, and the pixel electrode from coming into contact with the common layer or common electrode, thereby preventing short circuits between the upper and lower layers of the light-emitting device and the light-receiving device, and increasing the yield of the light-emitting device and the light-receiving device.

[0048] The end of the insulating layer preferably has a tapered shape with a taper angle of less than 90° in a cross-sectional view. This prevents step disconnection of the common layer and common electrode provided on the insulating layer. Therefore, connection failure due to step disconnection can be suppressed. Furthermore, it is possible to suppress an increase in electrical resistance due to a local thinning of the common electrode caused by the step.

[0049] In this specification and the like, the term "step discontinuity" refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of the surface on which it is formed (for example, a step or the like).

[0050] As described above, the island-shaped light-emitting layer and active layer manufactured by the method for manufacturing a display device according to one embodiment of the present invention are formed by processing a film formed on one surface. Therefore, a high-resolution display device or a display device with a high aperture ratio, which has been difficult to achieve until now, can be realized. Furthermore, since the light-emitting layers of the light-emitting device can be individually manufactured for each color, a display device with extremely vivid, high contrast, high luminance, and high display quality can be realized. Furthermore, a light-receiving device can capture high-resolution images.

[0051] Furthermore, the display device of one embodiment of the present invention includes convex lens-shaped structures over the light-receiving device and the light-emitting device. By providing the structures over the light-receiving device and the light-emitting device, the light-receiving sensitivity of the light-receiving device and the efficiency of extracting light emitted from the light-emitting device to the outside can be increased.

[0052] By making the width of the structure provided on the light-receiving device larger than the width of the light-receiving portion, the light-collecting ability can be increased, and the light sensitivity of the light-receiving device can be improved.

[0053] The cross section of the convex lens-like structure is preferably approximately trapezoidal. In the case of a lens-like structure with a hemispherical cross section, the width and thickness of the lens are proportional, so it may not be possible to arrange it depending on the pixel size. In addition, some of the light reflected within the structure tends to have a large angle of incidence. As a result, the light is likely to be totally reflected, and may not be able to efficiently enter the light-receiving device.

[0054] In the case of a structure with a roughly trapezoidal cross section, the vicinity of the edge is lens-shaped and the vicinity of the center is flat. Therefore, light entering the vicinity of the edge of the opening can be refracted and made to enter the light-receiving device. Furthermore, since the angle of incidence of light reflected within the structure is relatively small, it is less likely to undergo total reflection and can effectively enter the light-receiving device. Therefore, the optical sensitivity of the light-receiving device can be improved.

[0055] Furthermore, some of the light emitted by the light-emitting device may be blocked near the edge of the opening and not be extracted to the outside. By providing a convex lens-shaped structure in the optical path of the light, the light can be refracted and extracted to the outside, thereby improving the light extraction efficiency.

[0056] The convex lens-shaped structure can be provided on both the light-receiving device and the light-emitting device, but may be provided on either the light-receiving device or the light-emitting device.

[0057] In this specification, the convex lens-shaped structure having a substantially trapezoidal cross section may be simply referred to as a lens, a trapezoidal lens, or a microlens. Furthermore, a regularly arranged array of such lenses may be referred to as a microlens array (MLA).

[0058] In this embodiment, a cross-sectional structure of a display device according to one embodiment of the present invention will be mainly described.

[0059] 1A shows a top view of a display device 100 having a light-emitting device and a light-receiving device. The display device 100 has a display section in which a plurality of pixels 110 are arranged. Fig. 1A shows some subpixels, and illustrates an example in which the pixel 110 is made up of a plurality of subpixels (subpixels 110a, 110b, 110c, and 110d) arranged at equal intervals.

[0060] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect perpendicularly or approximately perpendicularly (see FIG. 1A).

[0061] 1A corresponds to the top surface shape of the light-emitting region or the light-receiving region, and may be a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any of these polygons with rounded corners, an ellipse, or a circle.

[0062] 1A, the layout of the circuits included in the subpixels is not limited to the range of the subpixels shown in FIG. 1A, and may be located outside the range of the subpixels. For example, the transistor included in the subpixel 110a may be located within the range of the subpixel 110b, or part or all of the transistor may be located outside the range of the subpixel 110a.

[0063] The aperture ratios of the sub-pixels 110a, 110b, 110c, and 110d can be determined appropriately. The aperture ratios of the sub-pixels 110a, 110b, 110c, and 110d may be different from one another, or two or more of them may be equal or approximately equal.

[0064] A display device according to one embodiment of the present invention includes a light-receiving device in a pixel. For example, the pixel 110 shown in FIG. 1A may include four subpixels, three of which include a light-emitting device and one of which includes a light-receiving device.

[0065] Each of the three sub-pixels can have a light-emitting device that emits light of a different color, such as a red (R), green (G), and blue (B) sub-pixel or a yellow (Y), cyan (C), and magenta (M) sub-pixel.

[0066] In the following description, an example will be described in which the sub-pixels 110a, 110b, and 110c each have a light-emitting device, and the sub-pixel 110d has a light-receiving device 150. Furthermore, as an element constituting the light-emitting device, the light-emitting device 130c of the sub-pixel 110c will be described, but common elements can also be applied to the light-emitting devices of the sub-pixels 110a and 110b.

[0067] 1B shows a cross-sectional view taken along dashed line X1-X2 in FIG. 1A. As shown in FIG. 1B, an insulating layer is provided on layer 101 including transistors, and light-emitting device 130c and light-receiving device 150 are provided on the insulating layer. In addition, a protective layer 131 is provided to cover light-emitting device 130c and light-receiving device 150.

[0068] Lenses 133 and light-shielding layers 135 provided on the substrate 120 are bonded onto the protective layer 131 via an adhesive layer 122. Here, the lenses 133 are provided for each sub-pixel, and have areas that overlap with the light-emitting devices 130c or the light-receiving devices 150. Light-shielding layers 135 are provided between adjacent lenses 133.

[0069] FIG. 1B shows an example in which light Lem emitted from the light-emitting device 130c is emitted to the substrate 120 side via the lens 133, and light Lin entering from the substrate 120 side is incident on the light-receiving device 150 via the lens 133.

[0070] Furthermore, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting devices and light-receiving devices 150. Although not shown in FIG. 1B , insulating layer 125 and insulating layer 127 are also provided in the region between adjacent light-emitting devices.

[0071] First, a light-emitting device will be described. A display device according to one embodiment of the present invention is a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed.

[0072] The layer 101 including the transistors can have a stacked structure including a plurality of transistors provided on a substrate and an insulating layer covering these transistors. The insulating layer over the transistors may have a single-layer structure or a stacked structure. Figure 1B shows the insulating layers over the transistors: an insulating layer 255a, an insulating layer 255b over the insulating layer 255a, and an insulating layer 255c over the insulating layer 255b.

[0073] The insulating layers 255a, 255b, and 255c can be formed using various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. The insulating layers 255a and 255c are preferably formed using an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulating layer 255b is preferably formed using a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulating layers 255a and 255c are preferably formed using silicon oxide films, and the insulating layer 255b is preferably formed using a silicon nitride film. The insulating layer 255b preferably functions as an etching protective film.

[0074] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0075] The light-emitting device may emit light of any one of three colors: infrared, red, green, blue, cyan, magenta, yellow, or white. The color purity can be enhanced by providing a microcavity structure to the light-emitting device. The light-emitting device 130c may emit light of any one of three colors: red (R), green (G), or blue (B).

[0076] As the light-emitting device, it is preferable to use an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of the light-emitting material contained in the light-emitting device include a fluorescent material, a phosphorescent material, a thermally activated delayed fluorescence (TADF) material, and an inorganic compound (such as a quantum dot material).

[0077] Of the pair of electrodes that a light-emitting device has, one electrode functions as a cathode and the other electrode functions as an anode. In the following, an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode will be described.

[0078] The light-emitting device 130c has a pixel electrode 111c on an insulating layer 255c, an island-shaped layer 113c on the pixel electrode 111c, a common layer 114 on the layer 113c, and a common electrode 115 on the common layer 114. In the light-emitting device 130c, the layer 113c and the common layer 114 can be collectively referred to as an EL layer.

[0079] By providing an island-shaped EL layer for each light-emitting device, it is possible to suppress leakage current between adjacent light-emitting devices. This prevents crosstalk caused by unintended light emission and realizes a display device with extremely high contrast. In particular, it realizes a display device with high current efficiency at low brightness.

[0080] The light-emitting device of the present embodiment may have a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). The light-emitting unit has at least one light-emitting layer.

[0081] If a single structure light emitting device is used, layer 113c can comprise a red, green or blue light emitting layer.

[0082] When a tandem light-emitting device is used, layer 113c can have multiple light-emitting units that emit red, green, or blue light, or a tandem structure can be used in which light-emitting units of different colors are combined to produce white light.

[0083] Layer 113c may include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generating layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0084] The layer 113c may have, for example, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer in this order. Alternatively, the layer 113c may have an electron blocking layer between the hole transport layer and the light-emitting layer. Alternatively, the layer 113c may have a hole blocking layer between the electron transport layer and the light-emitting layer. Alternatively, the layer 113c may have an electron injection layer on the electron transport layer.

[0085] Alternatively, the layer 113c may have an electron injection layer, an electron transport layer, a light-emitting layer, and a hole transport layer in this order. Alternatively, the layer 113c may have a hole blocking layer between the electron transport layer and the light-emitting layer. Alternatively, the layer 113c may have an electron blocking layer between the hole transport layer and the light-emitting layer. Alternatively, the layer 113c may have a hole injection layer on the hole transport layer.

[0086] A tandem light-emitting device can have two or more light-emitting units in the layer 113c, and each light-emitting unit can include one or more light-emitting layers. Each light-emitting unit may also include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. A charge generation layer (also called an intermediate layer) is preferably provided between each light-emitting unit. The charge generation layer has at least a charge generation region.

[0087] For example, the layer 113c can have a stacked structure of a light-emitting unit 113_1, a charge generation layer 113_3, and a light-emitting unit 113_2 (see the enlarged view of the layer 113c in FIG. 1C). Note that in the drawings used in this embodiment, the charge generation layer may be indicated by a dashed line.

[0088] When a light-emitting device having a tandem structure is used, the layer 113c can have a plurality of light-emitting units emitting light of the same color. For example, in the configuration shown in FIG. 1C, the light-emitting unit 113_1 and the light-emitting unit 113_2 can both be the same type of light-emitting unit emitting red, green, or blue light.

[0089] Furthermore, in order to emit white light, a tandem structure can be used in which light-emitting units emitting different colors are combined. To obtain white light emission, a configuration can be used in which light emitted by multiple light-emitting units is combined to obtain white light emission. For example, in the configuration shown in FIG. 1C , one of the light-emitting units 113_1 and 113_2 can be a blue-emitting unit, and the other can be a yellow-emitting unit. Alternatively, a red-emitting light-emitting unit and a cyan-emitting light-emitting unit can be combined. Alternatively, a green-emitting light-emitting unit and a magenta-emitting light-emitting unit can be combined.

[0090] Alternatively, a configuration may be used in which three light-emitting units are combined. For example, a configuration may be used in which three light-emitting units, a red-emitting light-emitting unit, a green-emitting light-emitting unit, and a blue-emitting light-emitting unit, are combined. Alternatively, a configuration may be used in which three light-emitting units, a blue-emitting light-emitting unit, a yellow- or yellow-green-emitting light-emitting unit, and a blue-emitting light-emitting unit, are combined. Alternatively, a configuration may be used in which three light-emitting units, a blue-emitting light-emitting unit, a yellow-, yellow-green-, or green-, and red-emitting light-emitting unit, and a blue-emitting light-emitting unit, are combined.

[0091] The number of layers of the light-emitting units and the order of the colors can be, from the anode side, a two-layer structure of B and Y, a two-layer structure of B and light-emitting unit X, a three-layer structure of B, Y, and B, and the number of layers of the light-emitting layers in light-emitting unit X and the order of the colors can be, from the anode side, a two-layer structure of R and Y, a two-layer structure of R and G, a two-layer structure of G and R, a three-layer structure of G, R, and G, or a three-layer structure of R, G, and R. Furthermore, another layer can be provided between the two light-emitting layers.

[0092] Tandem light-emitting devices, which emit light from multiple light-emitting units, require a relatively high voltage to emit light, but require a smaller current to achieve the same emission intensity as a single-type light-emitting device (one light-emitting unit configuration). Therefore, the tandem structure can reduce the current stress per light-emitting unit and extend the device life. In other words, the use of tandem light-emitting devices can form highly reliable display devices.

[0093] In the structure shown in FIG. 1C , the light-emitting unit 113_2 preferably includes a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer. Alternatively, the light-emitting unit 113_2 preferably includes a light-emitting layer and a carrier block layer (hole block layer or electron block layer) on the light-emitting layer. Alternatively, the light-emitting unit 113_2 preferably includes a light-emitting layer, a carrier block layer on the light-emitting layer, and a carrier transport layer on the carrier block layer. Since the surface of the light-emitting unit 113_2 is exposed during the manufacturing process of the display device, providing one or both of a carrier transport layer and a carrier block layer on the light-emitting layer can prevent the light-emitting layer from being exposed to the outermost surface and reduce damage to the light-emitting layer. This can improve the reliability of the light-emitting device. Note that when three or more light-emitting units are included, the uppermost light-emitting unit preferably includes a light-emitting layer and one or both of a carrier transport layer and a carrier block layer on the light-emitting layer.

[0094] The structure and materials of the tandem light-emitting device will be described in detail in other embodiments.

[0095] The common layer 114 may have an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may have a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. The common layer 114 and the common electrode 115 are shared by the light-emitting devices of each sub-pixel.

[0096] 1B, the layer 113c is formed to cover the edge of the pixel electrode 111c. A mask layer 118c is located on the layer 113c of the light-emitting device 130c. The mask layer 118c is a remaining portion of the mask layer that was provided in contact with the upper surface of the layer 113c when the layer 113c was processed.

[0097] 1B, one end of the mask layer 118c is aligned or approximately aligned with an end of the layer 113c, and the other end of the mask layer 118c is located on the layer 113c, where the other end of the mask layer 118c preferably overlaps with the layer 113c and the pixel electrode 111c.

[0098] The side surface of the layer 113c is covered with the insulating layer 125. The insulating layer 127 overlaps with the side surface of the layer 113c with the insulating layer 125 interposed therebetween.

[0099] Furthermore, a portion of the upper surface of layer 113c is covered with mask layer 118c. Insulating layers 125 and 127 overlap a portion of the upper surface of layer 113c via mask layer 118c. Note that the upper surface of layer 113c is not limited to the upper surface of the flat portion that overlaps the upper surface of the pixel electrode, but may also include the upper surfaces of the inclined portion and flat portion located outside the upper surface of the pixel electrode.

[0100] By covering a portion of the upper surface and the side surfaces of the layer 113c with at least one of the insulating layer 125, the insulating layer 127, and the mask layer 118c, it is possible to prevent the common layer 114 (or the common electrode 115) from contacting the pixel electrode 111c and the side surfaces of the layer 113c, thereby preventing short-circuiting between the upper and lower layers of the light-emitting device.

[0101] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recess in which the insulating layer 125 is formed. The insulating layer 127 can be configured to overlap a part of the top surface and the side surfaces of the layer 113c with the insulating layer 125 interposed therebetween. The insulating layer 127 preferably covers at least a part of the side surfaces of the insulating layer 125.

[0102] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, which reduces the extreme unevenness of the surface on which layers (e.g., the carrier injection layer, the common electrode, etc.) are formed on the island-shaped layers, making it possible to make the surface flatter, thereby improving the coverage of the carrier injection layer, the common electrode, etc.

[0103] The common layer 114 and the common electrode 115 are provided on the layer 113c, the mask layer 118c, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, there is a step between the region where the pixel electrode and the island-shaped EL layer are provided and the region where the pixel electrode and the island-shaped EL layer are not provided (the region between the light-emitting devices).

[0104] In the display device of one embodiment of the present invention, the insulating layers 125 and 127 can planarize the step, thereby improving the coverage of the common layer 114 and the common electrode 115. Therefore, poor connection due to disconnection of the step can be suppressed. Furthermore, an increase in electrical resistance due to local thinning of the common electrode 115 due to the step can be suppressed.

[0105] The upper surface of the insulating layer 127 preferably has a highly flat shape, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.

[0106] While FIG. 1B shows an example in which the top surface of the insulating layer 127 has a flat portion, the entire top surface of the insulating layer 127 may have a convex curved shape, as shown in FIG. 2A . Alternatively, the top surface of the insulating layer 127 may have a concave curved shape, as shown in FIG. 2B . In FIG. 2B , the top surface of the insulating layer 127 has a shape that gently bulges from the edge toward the center, i.e., a convex curved shape, and a shape that is recessed at the center and its vicinity, i.e., a concave curved shape. Also, in FIG. 2B , the convex curved portion of the top surface of the insulating layer 127 smoothly connects to the tapered portion at the edge. Even when the insulating layer 127 has such a shape, the common layer 114 and the common electrode 115 can be formed with good coverage over the entire insulating layer 127.

[0107] 2B , the insulating layer 127 has a concave curved surface in the center, which can reduce stress in the insulating layer 127. More specifically, the insulating layer 127 has a concave curved surface in the center, which can reduce local stress at the end of the insulating layer 127 and can suppress one or more of film peeling between the layer 113c and the mask layer 118c, film peeling between the mask layer 118c and the insulating layer 125, and film peeling between the insulating layer 125 and the insulating layer 127.

[0108] 1B to 2B , the common layer 114 and the common electrode 115 can be formed with high coverage by providing the mask layer 118c, the insulating layer 125, and the insulating layer 127. This makes it possible to prevent the common layer 114 and the common electrode 115 from being separated from each other and from having locally thin film thicknesses.

[0109] Therefore, between the light-emitting devices, it is possible to prevent poor connection due to the disconnection of the common layer 114 and the common electrode 115 and an increase in electrical resistance due to a locally thin portion of the film thickness in the common layer 114 and the common electrode 115. As a result, the display device according to one embodiment of the present invention can improve the display quality.

[0110] Next, examples of materials for the insulating layer 125 and the insulating layer 127 will be described.

[0111] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. Aluminum oxide is particularly preferable because it has a high etching selectivity with respect to the EL layer and functions to protect the EL layer in the formation of the insulating layer 127 described below.

[0112] In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) as the insulating layer 125, it is possible to form an insulating layer 125 that has few pinholes and has an excellent function of protecting the EL layer. The insulating layer 125 may also have a stacked structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a stacked structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0113] The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. The insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0114] In this specification and the like, a barrier insulating layer refers to an insulating layer having barrier properties. In addition, in this specification and the like, the barrier properties refer to a function of suppressing the diffusion of a corresponding substance (also referred to as low permeability) or a function of capturing or fixing (also referred to as gettering) a corresponding substance.

[0115] The insulating layer 125 has a function as a barrier insulating layer or a gettering function, which makes it possible to suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse into each light-emitting device from the outside. With this configuration, it is possible to provide a highly reliable light-emitting device and further a highly reliable display device.

[0116] The insulating layer 125 and the mask layer 118c may be made of the same material, in which case the boundary between the mask layer 118c and the insulating layer 125 may become unclear, and the mask layer 118c and the insulating layer 125 may be recognized as a single layer.

[0117] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the extreme unevenness of the insulating layer 125 formed between adjacent light emitting devices.

[0118] An insulating layer containing an organic material can be suitably used as the insulating layer 127. As the organic material, a photosensitive organic resin is preferably used, for example, a photosensitive resin composition containing an acrylic resin. Note that in this specification and the like, the term "acrylic resin" does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0119] The insulating layer 127 may also be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins. The insulating layer 127 may also be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. The photosensitive resin may also be a photoresist. Either a positive-type material or a negative-type material may be used as the photosensitive organic resin.

[0120] The insulating layer 127 may be made of a material that absorbs visible light. By having the insulating layer 127 absorb light emitted from the light-emitting device, it is possible to suppress light leakage (stray light) from the light-emitting device to an adjacent light-emitting device or light-receiving device through the insulating layer 127. This can improve the display quality and imaging performance of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, it is possible to reduce the weight and thickness of the display device.

[0121] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used for color filters (color filter materials). In particular, using a resin material in which two or more color filter materials are laminated or mixed is preferable because it can enhance the visible light blocking effect. In particular, mixing three or more color filter materials makes it possible to form a black or nearly black resin layer.

[0122] Next, the light receiving device 150 will be described. Note that a description of elements common to the light emitting device 130c and elements having a common purpose will be omitted.

[0123] The light receiving device can be a pn-type or pin-type photodiode. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0124] The light-receiving device can detect either visible light or infrared light, or both. When detecting infrared light, it is possible to detect an object even in a dark place.

[0125] As the light-receiving device, it is preferable to use an organic photodiode having a layer containing an organic compound. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0126] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL device.

[0127] The light-receiving device is driven by applying a reverse bias between the pixel electrode and the common electrode, so that it can detect light incident on the light-receiving device, generate electric charges, and extract them as a current.

[0128] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called a photoelectric conversion layer) of the light-receiving device is formed by depositing a film to become the active layer on the entire surface and then processing it, rather than using a fine metal mask. Therefore, the island-shaped active layer can be formed with a uniform thickness. Furthermore, by providing a mask layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0129] The light-receiving device 150 has a pixel electrode 111 d on an insulating layer 255 c , a layer 113 d on the pixel electrode 111 d , a common layer 114 on the layer 113 d , and a common electrode 115 on the common layer 114 .

[0130] Here, the layer 113d includes at least an active layer and preferably has multiple functional layers. Examples of functional layers include a carrier transport layer (hole transport layer and electron transport layer) and a carrier block layer (hole block layer and electron block layer). It is also preferable to have one or more layers on the active layer. Having another layer between the active layer and the mask layer can prevent the active layer from being exposed to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the active layer. This can improve the reliability of the light-receiving device 150. Therefore, the layer 113d preferably has an active layer and a carrier block layer (hole block layer or electron block layer) or a carrier transport layer (electron transport layer or hole transport layer) on the active layer.

[0131] The layer 113d is provided in the light-receiving device 150 but not in the light-emitting device 130c. However, functional layers other than the active layer included in the layer 113d may have the same material as functional layers other than the light-emitting layer included in the layer 113c. On the other hand, the common layer 114 is a continuous layer shared by the light-receiving device 150 and the light-emitting device 130c.

[0132] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same function in the light-emitting device and the light-receiving device. For example, a hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0133] The structure and materials of the light receiving device will be described in detail in other embodiments.

[0134] A mask layer 118c is located between the layer 113c and the insulating layer 125, and a mask layer 118d is located between the layer 113d and the insulating layer 125. The mask layer 118c is a remaining portion of a mask layer that was provided on the layer 113c when the layer 113c was processed. The mask layer 118d is a remaining portion of a mask layer that was provided in contact with the upper surface of the layer 113d when the layer 113d, which is a layer including an active layer, was processed. The mask layers 118c and 118d may be made of the same material or different materials.

[0135] The subpixel 110d may have a higher aperture ratio than at least one of the subpixels 110a, 110b, and 110c. The larger light-receiving area of ​​the subpixel 110d may facilitate detection of an object. For example, depending on the resolution of the display device and the circuit configuration of the subpixels, the aperture ratio of the subpixel 110d may be higher than the aperture ratios of the other subpixels.

[0136] Furthermore, the sub-pixel 110d may have a lower aperture ratio than at least one of the sub-pixels 110a, 110b, and 110c. By lowering the aperture ratio of the sub-pixel 110d, the pinhole effect can be enhanced, resulting in a clearer image.

[0137] In this way, it is preferable that the detection wavelength, definition, and aperture ratio of the sub-pixel 110d be changed depending on the application.

[0138] The protective layer 131 provided on the light-emitting device 130c and the light-receiving device 150 may have a single-layer structure or a laminated structure of two or more layers. By providing the protective layer 131, the reliability of the light-emitting device 130c and the light-receiving device 150 can be improved.

[0139] There is no restriction on the conductivity of the protective layer 131. The protective layer 131 can be made of at least one of an insulating film, a semiconductor film, and a conductive film.

[0140] The protective layer 131 has an inorganic film, which prevents oxidation of the common electrode 115 and prevents impurities (moisture, oxygen, etc.) from entering the light-emitting device and the light-receiving device, thereby suppressing deterioration of the light-emitting device and the light-receiving device and improving the reliability of the display device.

[0141] For example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used for the protective layer 131. Specific examples of these inorganic insulating films are as given in the description of the insulating layer 125. In particular, the protective layer 131 preferably has an insulating nitride film or an insulating nitride oxide film, and more preferably has an insulating nitride film.

[0142] Alternatively, an inorganic film containing In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like can be used for the protective layer 131. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0143] The protective layer 131 preferably has high transparency to visible light. ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0144] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 131. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0145] Furthermore, the protective layer 131 may have an organic film. The protective layer 131 may have both an organic film and an inorganic film. Examples of organic materials that can be used for the protective layer 131 include the organic insulating materials that can be used for the insulating layer 127.

[0146] The protective layer 131 may have a two-layer structure formed by using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed by the ALD method, and the second layer of the protective layer 131 may be formed by the sputtering method.

[0147] Lenses 133 and light-shielding layers 135 provided on the substrate 120 are bonded onto the protective layer 131 via an adhesive layer 122. Here, the lenses 133 are provided for each sub-pixel, and the light-emitting devices 130c and the light-receiving devices 150 each have an area that overlaps with the lenses 133. Light-shielding layers 135 are provided between adjacent lenses 133. The light-shielding layers 135 have an area that overlaps with the insulating layer 127.

[0148] The lens 133 can be made of the same material as the insulating layer 127. The light-shielding layer 135 can be made of a metal material or a resin material containing a material that absorbs visible light.

[0149] It is preferable that the width (L2) of the lens 133 provided on the light-receiving device 150 is larger than the width (L1) of the light-receiving portion of the light-receiving device 150. With this configuration, light incident on an area (opening) wider than the light-receiving portion can be condensed and incident on the light-receiving portion, thereby increasing the photosensitivity. Note that the light-receiving portion refers to the area where the layer 113d and the common layer 114 contact each other. Furthermore, if the common layer 114 is not provided, the light-receiving portion refers to the area where the layer 113d and the common electrode 115 contact each other.

[0150] Here, the width of the lens and the light receiving unit corresponds to either the diameter of the inscribed circle, the diameter of the circumscribed circle, the length between opposite sides, or the length between diagonal corners (for a shape with rounded corners, the length between diagonal corners) of each shape when viewed from above. The definition of the width also applies to a pinhole (opening) described later. Specific examples of the lens width will be described later using Figures 5A, 6A, and 6B.

[0151] 3A to 5B, the lens provided on the light receiving device 150 will be described. The lens and the light receiving device 150 are provided at a distance from each other so that their centers overlap.

[0152] When capturing an image of a subject in contact with the surface of the substrate 120, it is preferable to provide an element for forming an image of the subject on the light-receiving device. A lens is generally considered as such an element, but it is difficult to secure a sufficient area for providing a lens between the surface of the substrate 120 and the light-receiving device. This makes it difficult to provide a lens for collecting light rays and forming an image.

[0153] Therefore, it is preferable to form a pinhole on the light receiving device to reduce the amount of light rays and form an image. In one aspect of the present invention, the pinhole is formed by providing an opening in the light blocking layer 135.

[0154] The pinhole is there to reduce the amount of light, but it can also cause a decrease in light sensitivity due to an insufficient amount of light. To improve light sensitivity, it is preferable to make the pinhole as large as possible within the design range so that the light that enters the pinhole can be efficiently incident on the light receiving section.

[0155] 3A is a comparative example in which no lens is provided, and is a simplified diagram showing light rays incident on a light receiving device, with minute reflections at the boundaries between layers not shown.

[0156] Most of the light irradiated obliquely onto the substrate 120 is blocked by the light-shielding layer 135. Therefore, most of the light incident on the light-receiving device 150 is a straight or nearly straight ray. However, if the width of the pinhole (opening) is larger than the width of the light-receiving portion, some of the light may not be incident on the light-receiving portion, as shown by rays A and B in FIG. 3A.

[0157] 3B, it is preferable to provide a lens 136 in the pinhole (opening) to refract the light rays A and B and allow them to be incident on the light receiving section. However, a hemispherical or nearly hemispherical lens (hereinafter simply referred to as a hemispherical lens) requires a height that is approximately half the width of the sub-pixel, which places restrictions on the size of the sub-pixel that can be used.

[0158] The distance between the protective layer 131 and the substrate 120 (the thickness of the adhesive layer 122) is about several micrometers regardless of the size of the display device. Therefore, the width of a subpixel for which a hemispherical lens can be used without difficulty is at most about twice the thickness of the adhesive layer 122 (several tens of micrometers or less). In other words, it becomes difficult to apply a hemispherical lens to a display device having a subpixel larger than that. Furthermore, while a lens can be formed by applying a photosensitive resin or the like, it is difficult to apply such a photosensitive resin to a thickness of more than several tens of micrometers. For example, in a display device larger than a smartphone, even if it is high-definition, the width of the subpixel may be more than several tens of micrometers, making it difficult to use a hemispherical lens.

[0159] Therefore, in one embodiment of the present invention, a substantially trapezoidal lens 133 shown in FIG. 4A is used. Here, a substantially trapezoidal lens is a lens whose cross-sectional shape in the thickness direction including the center of the lens is approximately trapezoidal, or whose cross-sectional shape including the central axis (optical axis) of the lens is approximately trapezoidal. Furthermore, a substantially trapezoidal lens has a convex curved surface on the surface including the parts corresponding to the legs of the trapezoid, or a convex curved surface extending from the surface including the parts corresponding to the legs to the surface including the part corresponding to the upper base. Furthermore, a substantially trapezoidal lens may have a surface including the part corresponding to the upper base of the trapezoid and a surface including the part corresponding to the lower base of the trapezoid that are both flat. Furthermore, these two surfaces may be parallel to each other.

[0160] Alternatively, a substantially trapezoidal lens can be described as a lens that is substantially frustum-shaped, has an upper base surface, a lower base surface, and a conical surface, and the conical surface has a convex curve, or has a convex curve from the conical surface to the upper base surface.

[0161] That is, the area near the end of lens 133 acts as a convex lens, refracting light that travels straight into that area and changing its direction of travel. Meanwhile, light that travels straight into other areas (flat portions) of lens 133 continues traveling straight without changing its direction of travel.

[0162] 3B, the lens 133 can also refract the light rays A and B to make them incident on the light receiving section. Furthermore, the light incident on the center or its vicinity of the lens 133 can also travel straight and be incident on the light receiving section.

[0163] Therefore, the substantially trapezoidal lens 133 can achieve the same effect as the hemispherical lens 136. The substantially trapezoidal lens can be made thin and low in height, so it can be applied to sub-pixels with a width of 10 or more μm, for which it is difficult to apply a hemispherical lens. The substantially trapezoidal lens 133 can also be considered a type of plano-convex lens.

[0164] FIG. 5A illustrates a plan view and a perspective view of the lens 133. FIG. 5A shows a lens shape corresponding to the pixel array shown in FIG. 1A, and is substantially rectangular when viewed from above. Here, the width of the lens can be defined as the diameter W1 of the inscribed circle or the diameter W2 of the circumscribed circle shown in FIG. 5A. The lens 133 also has convex curved surface regions 133R near the ends and flat surface regions 133F at and near the center. As described above, the convex curved surface region 133R acts as a lens.

[0165] 6A is a plan view and a perspective view showing an example of a lens that is circular when viewed from above. In a lens that is circular when viewed from above, the diameter W1 of the circle can be defined as the width of the lens.

[0166] 6B is a plan view and a perspective view showing an example of a lens that can be applied to the delta arrangement and has a substantially hexagonal shape when viewed from above. In a substantially hexagonal lens when viewed from above, the length between opposite sides (W1, W2) or the length between opposite corners (W3, W4) can be defined as the lens width.

[0167] While Fig. 5A shows an example in which the light-shielding layer 135 is provided around the lenses provided in all sub-pixels, a configuration in which the light-shielding layer 135 is provided around only some of the sub-pixels may be used. For example, as shown in Fig. 5B , a configuration in which the light-shielding layer 135 is provided around only the sub-pixel having a light-receiving device (corresponding to the sub-pixel 110d in Fig. 1 ) may be used. The configuration shown in Fig. 5B can also be applied to Figs. 6A and 6B .

[0168] In addition, in FIG. 4A, the region corresponding to the upper base of the trapezoid is shown as a flat surface, but it may have a slightly convex curved surface.

[0169] 4A shows an example in which the upper base side of the lens 133 is formed to face the light-receiving device, but as shown in FIG. 4B , the lower base side of the lens 133 may be formed to face the light-receiving device. In this case, a planarization film 137 is formed on the protective layer 131, and the lens 133 is formed on the planarization film 137. Then, the substrate 120 on which the light-shielding layer 135 is formed is bonded via the adhesive layer 122.

[0170] 4A shows a configuration in which the light-shielding layer 135 and the lens 133 do not overlap, but as shown in the dashed circle in Fig. 7A, a configuration in which the lens 133 overlaps an edge of the light-shielding layer in an area may be used. Alternatively, as shown in the dashed circle in Fig. 7B, a configuration in which the light-shielding layer 135 overlaps an edge of the lens 133 in an area may be used.

[0171] It has been found through optical simulation that the amount of light received at the light receiving section is better when the approximately trapezoidal lens 133 is used than when the hemispherical lens 136 is used.

[0172] Figure 8A shows a typical configuration of the light-receiving device and peripheral elements used in the simulation. Note that the protective layer 131 was omitted in this simulation model. The common electrode consisted of two layers: a transparent conductive film 115a and a semi-reflective electrode 115b. The lens thickness T was 2 μm, the width W (flat region 133F in Figure 5A near the center of the lens) was 10 μm, the radius of curvature R (corresponding to the convex curved region 133R in Figure 5A) near the edge of the lens was 4 μm, and the cell gap G (the distance from the transparent conductive film 115a to the substrate 120) was 10 μm. The light source was installed on the top surface of the substrate 120 (thickness 300 μm). Table 1 shows the materials, refractive indexes, reflectivities, and absorptivities of the other elements used in the simulation.

[0173]

[0174] The models used in the simulation were a configuration having a flat region on lens 133 shown in Fig. 8A, a configuration without a lens shown in Fig. 3A, a configuration having a hemispherical lens 136 shown in Fig. 3B, and a configuration in which a convex curved surface is added to the flat region of lens 133 shown in Fig. 8B to Fig. 8E. In Fig. 8B to Fig. 8E, the heights of the convex curved surface added to the flat region of lens 133 were 0.5 μm, 1 μm, 2 μm, and 3 μm, respectively. In addition, the ratios of the width of the reference flat region to the height of the convex curved surface (hereinafter referred to as the aspect ratio) were 5%, 10%, 20%, and 30%, respectively.

[0175] 9 shows the results of a simulation of the amount of light received at the light receiving unit using these models, with the amount of light received expressed as a relative value with the amount without a lens being set to 1. The simulation software used was Lighting SimulatorCAD by Best Media.

[0176] The simulation results showed that the light-receiving amount was greatest for a light-emitting device using a substantially trapezoidal lens 133. The light-receiving amounts for the substantially trapezoidal lens with a flat surface ( FIG. 5A ) and the lens with an aspect ratio of 5% to 20% ( FIGS. 8B to 8D ) were almost equivalent, and the light-receiving amount tended to decrease when the aspect ratio exceeded 30%.

[0177] This is because, as shown in Figure 10A, in hemispherical lens 136, the interface between the lens and adhesive layer 122 is spherical, so that of the light incident on lens 136, some of the light has a relatively large angle of incidence θ1 at the interface. Light that has a large angle of incidence at the interface is subject to repeated total reflection and travels in a direction different from the light receiving section. For example, a similar phenomenon is thought to be more likely to occur in a lens with an aspect ratio of 30%, as shown in Figure 8E.

[0178] On the other hand, as shown in Figure 10B, in the trapezoidal lens 133, the interface between the lens 136 and the adhesive layer 122 has a large flat surface. Therefore, most of the light incident on the lens 133 does not have a large angle of incidence θ2 at the interface. Therefore, the light does not undergo total reflection and travels toward the light receiving unit. For example, it is believed that the angle of incidence θ2 is also unlikely to become large in lenses having an aspect ratio of 5% to 20%, as shown in Figures 8B to 8D.

[0179] Therefore, the amount of light received by the light receiving section is greater when the approximately trapezoidal lens 133 is used than when the hemispherical lens 136 is used. It can be said that using an approximately trapezoidal lens is effective regardless of the size of the subpixel. Since the amount of light received is excellent even for lenses with an aspect ratio of up to about 20%, it can be said that the approximately trapezoidal lens has an excellent effect in improving the amount of light received even when the flat surface is incompletely formed and has a slightly convex curve.

[0180] Furthermore, the substantially trapezoidal lens 133, when provided on the light-emitting device 130c, also has the effect of increasing the light extraction efficiency. The lens 133 and the light-emitting device 130c are provided at a distance from each other so that their centers overlap.

[0181] The width of the lens 133 provided on the light-emitting device 130c is preferably larger than the width of the light-emitting portion of the light-emitting device 130c. The light-emitting portion is defined as the region where the layer 113c and the common layer 114 contact each other. When the common layer 114 is not provided, the light-emitting portion is defined as the region where the layer 113c and the common electrode 115 contact each other.

[0182] Here, the lens width is the same as the lens width shown in FIGS. 5A, 6A, and 6B.

[0183] 11A and 11B are diagrams illustrating a portion of the light beam emitted by the light-emitting device 130c. Fig. 11A is a comparative example in which no lens is provided, and Fig. 11B is an example in which a lens 133 is provided. The substantially trapezoidal lens 133 provided on the light-emitting device 130c can have the same configuration as the substantially trapezoidal lens 133 provided on the light-receiving device 150 described above.

[0184] When the light-shielding layer 135 is provided, a portion of the light emitted obliquely from the light-emitting device 130c is blocked by the light-shielding layer 135 and cannot be emitted to the outside. On the other hand, when the lens 133 is provided, even the light that is blocked in FIG. 11A can be emitted to the outside due to refraction at the end of the lens 133. Therefore, by providing the approximately trapezoidal lens 133, it is possible to increase the light extraction efficiency. In other words, it is possible to form a high-brightness display device.

[0185] Various optical members can be disposed on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. In addition, the outside of the substrate 120 may be provided with a surface protection layer such as an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses scratches caused by use, or an impact absorbing layer.

[0186] As the surface protective layer, a glass layer or a silica layer (SiO ｘ The surface protection layer can be preferably formed of a material such as DLC (diamond-like carbon), aluminum oxide (AlO ｘ ), polyester-based materials, or polycarbonate-based materials may also be used. Note that it is preferable to use a material with high transmittance to visible light for the surface protection layer. It is also preferable to use a material with high hardness for the surface protection layer.

[0187] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0188] The substrate 120 can be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 can also be made of glass having a thickness sufficient to provide flexibility.

[0189] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0190] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0191] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0192] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display device. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0193] The adhesive layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, a material with low moisture permeability, such as epoxy resin, is preferable. Alternatively, a two-component resin may be used. Alternatively, an adhesive sheet or the like may be used.

[0194] In a display device according to one embodiment of the present invention, an EL layer is provided in an island shape for each light-emitting device, thereby suppressing leakage current between subpixels. This prevents crosstalk due to unintended light emission, enabling a display device with extremely high contrast. Furthermore, by providing an insulating layer having a tapered edge between adjacent island-shaped EL layers, discontinuities occurring during the formation of a common electrode can be suppressed. This suppresses connection defects due to discontinuities in the common layer and the common electrode. Therefore, the display device according to one embodiment of the present invention can achieve both high resolution and high display quality.

[0195] Furthermore, a substantially trapezoidal lens is provided on the light-receiving device and the light-emitting device included in the display device of one embodiment of the present invention. By providing the substantially trapezoidal lens, light incident on a pinhole (opening) in the light-receiving device can be efficiently received by the light-receiving portion, thereby improving light-receiving sensitivity. Furthermore, in the light-emitting device, light emitted toward an end of a light-shielding layer can be refracted by the lens and emitted to the outside, thereby improving light extraction efficiency.

[0196] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0197] Embodiment 2 In this embodiment, a method for manufacturing a lens included in a display device according to one embodiment of the present invention will be described. Note that Embodiment 1 can be referred to for the description of constituent materials of each element.

[0198] 12A to 12F are diagrams illustrating a manufacturing process of the lens 133 formed on the substrate 120. Note that, in the present embodiment, a process of forming the lens 133 after forming the light-shielding layer 135 will be described, but the light-shielding layer 135 may be formed after forming the lens 133.

[0199] First, the light-shielding layer 135 is formed on the substrate 120 (see FIG. 12A ). For example, a metal film having a thickness sufficient for light-shielding is formed on the substrate 120, and a resist mask is formed on the metal film by a photolithography process. The metal film is then etched to form the light-shielding layer 135 in a desired shape. Alternatively, the light-shielding layer 135 may be formed by applying a photosensitive resin, partially exposing the photosensitive resin, and then performing a development process.

[0200] Next, a photosensitive resin is applied onto the substrate 120 and the light-shielding layer 135, and pre-baked to form a resin layer 133a (see FIG. 12B ). As the photosensitive resin, for example, the material for forming the insulating layer 127 shown in Embodiment 1 can be used. Although an example of using a positive photosensitive resin is described here, a negative photosensitive resin may also be used.

[0201] Next, a photomask 145 is used to expose the resin layer 133a to light while blocking the areas where the lenses 133 are to be formed (see FIG. 12C). When a negative photosensitive resin is used, a photomask that blocks the areas where the lenses 133 are not to be formed is used.

[0202] Next, a development step is performed to remove unnecessary regions of the resin layer 133a, forming a resin layer 133b (see FIG. 12D). Here, since the resin layer 133b is unexposed, unreacted components remain and the resin layer 133b may be colored. Since the lens 133 to be formed preferably has high transmittance to visible light, if the resin layer 133b is colored, the reaction is promoted by exposing the resin layer 133b.

[0203] By promoting the reaction, a resin layer 133c with improved transmittance can be formed (see FIG. 12E). Furthermore, by performing such exposure after the development step, the post-baking temperature of the resin layer 133c in a subsequent step can be reduced in some cases. Note that if the resin layer 133b is not colored, exposure after the development step may not be necessary.

[0204] Then, post-baking is performed to reflow and harden the resin layer 133c, thereby forming the lens 133 (FIG. 12F).

[0205] Here, the degree of deformation of the resin layer 133c can be varied depending on the post-baking temperature. Figures 13A to 13C are SEM photographs showing the cross-sectional shapes of the lenses 133 completed by varying the post-baking temperature.

[0206] If the post-baking temperature is low (60°C x 15 minutes, see FIG. 13A), sufficient reflow is not achieved, and the resin layer 133c does not deform to have a curved surface near its edges, resulting in a lens shape. If the post-baking temperature is appropriate (80°C x 15 minutes, see FIG. 13B), the resin layer 133c deforms so that its center is approximately flat and its edges are curved, resulting in a lens 133 of the desired shape. If the post-baking temperature is high (100°C x 15 minutes, see FIG. 13C), the resin layer 133c deforms excessively, resulting in a hemispherical shape rather than a trapezoidal shape. Therefore, it is preferable to perform post-baking at an appropriate temperature.

[0207] Depending on the photosensitive resin used, it may not have the property of reflowing during post-baking, and the shape of the lens 133 may be completed during the step of Fig. 12D. In that case, post-baking may be performed in the next step to complete the lens 133.

[0208] This embodiment mode can be combined with other embodiment modes as appropriate.

[0209] Embodiment 3 In this embodiment, a pixel layout that can be applied to a display device of one embodiment of the present invention will be described.

[0210] [Pixel Layout] The arrangement of the sub-pixels is not particularly limited, and various methods can be applied, such as a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0211] The top surface shape of the sub-pixels shown in the drawings in this embodiment mode corresponds to the top surface shape of the light-emitting region or the light-receiving region.

[0212] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0213] Furthermore, the layout of the circuits constituting the sub-pixels is not limited to the range of the sub-pixels shown in the drawings, and may be arranged outside of the range.

[0214] The pixels 110 shown in FIGS. 14A to 14C are arranged in a stripe pattern.

[0215] FIG. 14A shows an example in which each subpixel has a rectangular top surface shape, FIG. 14B shows an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and FIG. 14C shows an example in which each subpixel has an elliptical top surface shape.

[0216] The pixels 110 shown in FIGS. 14D to 14F are arranged in a matrix.

[0217] Figure 14D is an example in which each sub-pixel has a square top surface shape, Figure 14E is an example in which each sub-pixel has an approximately square top surface shape with rounded corners, and Figure 14F is an example in which each sub-pixel has a circular top surface shape.

[0218] 14G and 14H show an example in which one pixel 110 is configured in two rows and three columns.

[0219] 14G has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, pixel 110 has subpixel 110a in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110d across these three columns.

[0220] The pixel 110 shown in FIG. 14H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels 110d in the bottom row (second row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (first column), subpixels 110b and 110d in the center column (second column), and subpixels 110c and 110d in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 14H, it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0221] FIG. 14I shows an example in which one pixel 110 is configured in three rows and two columns.

[0222] 14I has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c spanning from the first to second rows, and one subpixel (subpixel 110d) in the bottom row (third row). In other words, pixel 110 has subpixels 110a and 110b in the left column (first column), subpixel 110c in the right column (second column), and subpixel 110d spanning these two columns.

[0223] 14A to 14I includes four subpixels: 110a, 110b, 110c, and 110d. For example, a light-receiving device may be provided in one of the subpixels 110a to 110d, and a light-emitting device may be provided in the other three.

[0224] 14A to 14I , it is preferable that, for example, the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, the subpixel 110c be the subpixel B that emits blue light, and the subpixel 110d be the subpixel S that has a light-receiving device. With this configuration, the pixels 110 shown in FIGS. 14G and 14H have a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 110 shown in FIG. 14I has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0225] The wavelength of light detected by the subpixel S having the light receiving device is not particularly limited. The subpixel S can be configured to detect either or both of visible light and infrared light.

[0226] In addition, when no light-emitting device is provided, the sub-pixels 110a, 110b, 110c, and 110d can be sub-pixels of four colors: R, G, B, and white (W), sub-pixels of four colors: R, G, B, and Y, or sub-pixels of R, G, B, and infrared light (IR).

[0227] As shown in FIGS. 14J and 14K, a pixel can be configured to have five types of sub-pixels.

[0228] FIG. 14J shows an example in which one pixel 110 is configured in two rows and three columns.

[0229] 14J has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and two subpixels (subpixels 110d and 110e) in the bottom row (second row). In other words, pixel 110 has subpixels 110a and 110d in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110e spanning from the second column to the third column.

[0230] FIG. 14K shows an example in which one pixel 110 is configured in three rows and two columns.

[0231] 14K has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c across rows 1 and 2, and two subpixels (subpixels 110d and 110e) in the bottom row (third row). In other words, pixel 110 has subpixels 110a, 110b, and 110d in the left column (first column), and subpixels 110c and 110e in the right column (second column).

[0232] 14J and 14K, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, and the subpixel 110c be the subpixel B that emits blue light. With this configuration, the pixel 110 shown in FIG. 14J has a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 110 shown in FIG. 14K has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0233] 14J and 14K, it is preferable to use a subpixel S having a light-receiving device in at least one of the subpixels 110d and 110e. When light-receiving devices are used in both the subpixels 110d and 110e, the configurations of the light-receiving devices may be different from each other. For example, the wavelength ranges of light detected may differ at least partially. Specifically, one of the subpixels 110d and 110e may have a light-receiving device that mainly detects visible light, and the other may have a light-receiving device that mainly detects infrared light.

[0234] 14J and 14K, it is preferable that one of the subpixels 110d and 110e is a subpixel S having a light-receiving device, and the other is a subpixel having a light-emitting device that can be used as a light source. For example, it is preferable that one of the subpixels 110d and 110e is a subpixel IR that emits infrared light, and the other is a subpixel S having a light-receiving device that detects infrared light.

[0235] In a pixel having sub-pixels R, G, B, IR, and S, an image can be displayed using the sub-pixels R, G, and B, while the sub-pixel IR can be used as a light source to detect reflected infrared light emitted by the sub-pixel IR at the sub-pixel S.

[0236] As described above, the display device of one embodiment of the present invention can employ various layouts for a pixel having a subpixel including a light-emitting device. Furthermore, the display device of one embodiment of the present invention can employ a pixel having both a light-emitting device and a light-receiving device. In this case, various layouts can also be employed.

[0237] This embodiment mode can be combined with other embodiment modes as appropriate.

[0238] Embodiment 4 In this embodiment, a display device according to one embodiment of the present invention will be described.

[0239] The display device of the present embodiment can be a high-definition display device, and can therefore be used, for example, as a display unit for a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit for a wearable device that can be worn on the head, such as a head-mounted display (HMD) for VR, or a glasses-type AR device.

[0240] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices with relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproduction devices.

[0241] 15A shows a perspective view of a display module 280. The display module 280 includes the display device 100A and an FPC 290.

[0242] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0243] 15B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0244] The pixel portion 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 15B. The pixel 284a can be the pixel described in the previous embodiment. Fig. 15B shows an example in which the pixel 284a has a configuration similar to that of the pixel 110 shown in Fig. 1A.

[0245] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0246] One pixel circuit 283 a is a circuit that controls the driving of multiple elements included in one pixel 284 a. One pixel circuit 283 a can be configured to include a circuit that controls the light emission of one light-emitting device or the image capturing operation of one light-receiving device.

[0247] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0248] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0249] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display unit 281. For example, the aperture ratio of the display unit 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the wiring length between the circuit unit 282 and the pixel circuit unit 283 can be shortened, thereby reducing the effects of wiring resistance and wiring capacitance, enabling high-speed operation with low power consumption.

[0250] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small displays. For example, it can be suitably used in the display unit of a smartphone or a wristwatch-type electronic device.

[0251] Display Device 100A The display device 100A shown in FIG. 16 includes a substrate 301, a light-emitting device 130c, a light-receiving device 150, a capacitor 240, and a transistor 310.

[0252] 15A and 15B. The stacked structure from the substrate 301 to below the insulating layer 255a corresponds to the layer 101 including the transistor in the first embodiment.

[0253] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0254] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0255] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0256] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0257] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0258] An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. The light-emitting device 130c and the light-receiving device 150 are provided on the insulating layer 255c. Figure 16 shows an example in which the light-emitting device 130c and the light-receiving device 150 have the stacked structure shown in Figure 1B.

[0259] The pixel electrode 111c and the pixel electrode 111d are electrically connected to one of the source and drain of the transistor 310 via the insulating layer 243, the insulating layer 255a, the insulating layer 255b, and a plug 256 embedded in the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The pixel electrode may have a two-layer structure, for example, a reflective electrode and a transparent electrode on the reflective electrode. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0260] For details of the components from the light emitting device to the substrate 120, refer to Embodiment 1. The substrate 120 corresponds to the substrate 292 in FIG.

[0261] 17 is different from the display device 100A mainly in that the transistor configuration is different. In the following description of the display device, description of parts that are the same as those of the display devices described above may be omitted.

[0262] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0263] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0264] 15A and 15B . The stacked structure from the substrate 331 to below the insulating layer 255 a corresponds to the layer 101 including the transistor in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0265] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0266] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0267] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 is provided over and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0268] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264 or the like into the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0269] Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264. Inside the openings, an insulating layer 323 and a conductive layer 324 are buried, the insulating layer 323 being in contact with side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and the top surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0270] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0271] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0272] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably has a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and a part of the upper surface of the conductive layer 325, and a conductive layer 274b in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material through which hydrogen and oxygen do not easily diffuse as the conductive layer 274a.

[0273] [Display Device 100E] A display device 100E illustrated in FIG. 18 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0274] The transistor 320A, the transistor 320B, and the surrounding configurations thereof can be referred to the display device 100D.

[0275] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0276] [Display Device 100F] A display device 100F shown in FIG. 19 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide.

[0277] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0278] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0279] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0280] [Display Device 100G] FIG. 20 shows a perspective view of the display device 100G, and FIG. 21A shows a cross-sectional view of the display device 100G.

[0281] The display device 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 20, the substrate 152 is indicated by a dashed line.

[0282] The display device 100G includes a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Fig. 20 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Fig. 20 can also be said to be a display module including the display device 100G, an IC (integrated circuit), and an FPC.

[0283] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one side or multiple sides of the display portion 162. There may be one or multiple connection portions 140. FIG. 20 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0284] The circuit 164 can be, for example, a scanning line driver circuit.

[0285] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0286] 20 shows an example in which an IC 173 is provided on a substrate 151 by a chip-on-glass (COG) method or a chip-on-film (COF) method. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 173. The display device 100G and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0287] Figure 21A shows an example of a cross section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection portion 140, and a portion of the area including the end portion are cut away.

[0288] A display device 100G shown in FIG. 21A has a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, a light-receiving device 150, and the like between a substrate 151 and a substrate 152.

[0289] The light-emitting devices 130R and 130G and the light-receiving device 150P have the same layered structure as the light-emitting device and the light-receiving device shown in FIG. 1B, respectively, except that the configuration of the pixel electrodes is different.

[0290] The light-emitting device 130R includes a conductive layer 112a, a conductive layer 126a on the conductive layer 112a, and a conductive layer 129a on the conductive layer 126a. All or some of the conductive layers 112a, 126a, and 129a may be called pixel electrodes.

[0291] Light-emitting device 130G includes conductive layer 112b, conductive layer 126b on conductive layer 112b, and conductive layer 129b on conductive layer 126b.

[0292] The light receiving device 150P has a conductive layer 112d, a conductive layer 126d on the conductive layer 112d, and a conductive layer 129d on the conductive layer 126d.

[0293] The conductive layer 112a is connected to a conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 126a is located outside an end of the conductive layer 112a. An end of the conductive layer 126a and an end of the conductive layer 129a are aligned or approximately aligned. For example, a conductive layer functioning as a reflective electrode can be used for the conductive layer 112a and the conductive layer 126a, and a conductive layer functioning as a transparent electrode can be used for the conductive layer 129a.

[0294] The conductive layers 112b, 126b, and 129b in the light-emitting device 130G and the conductive layers 112d, 126d, and 129d in the light-receiving device 150P are similar to the conductive layers 112a, 126a, and 129a in the light-emitting device 130R, and therefore will not be described in detail.

[0295] Recesses are formed in the conductive layers 112a, 112b, and 112d so as to cover the openings provided in the insulating layer 214. A layer 128 is embedded in the recesses.

[0296] The layer 128 has a function of planarizing the recesses of the conductive layers 112a, 112b, and 112d. Conductive layers 126a, 126b, and 126d, which are electrically connected to the conductive layers 112a, 112b, and 112d, are provided on the conductive layers 112a, 112b, and 112d and the layer 128. Therefore, the regions overlapping with the recesses of the conductive layers 112a, 112b, and 112d can also be used as light-emitting regions or light-receiving regions, thereby increasing the aperture ratio of the pixel.

[0297] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material. For example, the organic insulating material that can be used for the insulating layer 127 can be used for the layer 128.

[0298] Additionally, a lens 133 and a protective layer 131 are provided on the light-emitting devices 130R and 130G and the light-receiving device 150P. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 122. A light-shielding layer 135 is provided on the substrate 152. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting devices. In FIG. 21A , the space between the substrates 152 and 151 is filled with the adhesive layer 122, thereby applying a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), thereby applying a hollow sealing structure. In this case, the adhesive layer 122 may be provided so as not to overlap with the light-emitting devices. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 122.

[0299] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112d, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126d, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129d. A common layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the common layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. The common layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact with each other and are electrically connected.

[0300] The display device 100G is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.

[0301] For example, the stacked structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in Embodiment 1.

[0302] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0303] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order over the substrate 151. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0304] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0305] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may also be stacked.

[0306] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The insulating layer 214 may also have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This can prevent recesses from being formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 112a, the conductive layer 126a, the conductive layer 129a, or the like.

[0307] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0308] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0309] The transistors 201 and 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistors. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0310] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0311] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0312] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0313] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0314] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as a source driver circuit) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0315] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0316] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0317] Furthermore, when a transistor operates in the saturation region, an OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a larger gradation in the pixel circuit.

[0318] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0319] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0320] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0321] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0322] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=1:3:2 or a composition thereabout, In:M:Zn=1:3:4 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, or In:M:Zn=4:2:3. or a composition in the vicinity thereof, In:M:Zn = 4:2:4.1 or a composition in the vicinity thereof, In:M:Zn = 5:1:3 or a composition in the vicinity thereof, In:M:Zn = 5:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:1:7 or a composition in the vicinity thereof, In:M:Zn = 5:1:8 or a composition in the vicinity thereof, In:M:Zn = 6:1:6 or a composition in the vicinity thereof, In:M:Zn = 5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0323] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0324] The transistors included in the circuit 164 may have the same structure as or different from the transistors included in the display portion 162. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types.

[0325] All the transistors included in the display portion 162 may be OS transistors, all the transistors included in the display portion 162 may be Si transistors, or some of the transistors included in the display portion 162 may be OS transistors and the rest may be Si transistors.

[0326] For example, by using both an LTPS transistor and an OS transistor in the display portion 162, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. As a more preferable example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction between wirings and to use an LTPS transistor as a transistor for controlling current.

[0327] For example, one of the transistors included in the display unit 162 functions as a transistor for controlling the current flowing through the light-emitting device and can also be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0328] On the other hand, another transistor included in the display portion 162 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). An OS transistor is preferably used as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), thereby reducing power consumption by stopping the driver when displaying a still image.

[0329] As described above, the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0330] A display device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with a metal maskless (MML) structure. This structure significantly reduces leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current or side leakage current). Furthermore, when an image is displayed on the display device, the viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. The extremely low leakage current that may flow through the transistor and lateral leakage current between the light-emitting devices significantly reduces light leakage during black display (so-called floating black).

[0331] In particular, among light-emitting devices with an MML structure, by applying the SBS structure described above, the layers provided between the light-emitting devices (for example, organic layers shared between the light-emitting devices, also called common layers) are configured to be separated, thereby eliminating side leakage or making it possible to greatly reduce side leakage.

[0332] 21B and 21C show other examples of transistor configurations.

[0333] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0334] 21B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0335] 21C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 can be processed using the conductive layer 223 as a mask to form the structure shown in FIG. 21C . In FIG. 21C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215.

[0336] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 112a, 112b, and 112d, a conductive film obtained by processing the same conductive film as the conductive layers 126a, 126b, and 126d, and a conductive film obtained by processing the same conductive film as the conductive layers 129a, 129b, and 129d. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0337] It is preferable to provide a light-shielding layer 135 on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 135 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 164, etc. Various optical members can be disposed on the outside of the substrate 152.

[0338] The materials that can be used for the substrate 120 can be applied to the substrate 151 and the substrate 152, respectively.

[0339] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0340] 22A, 22B, 23A, and 23B show modified examples of the display device 100G, in which the transistors and their surroundings are not shown.

[0341] 22A shows an example in which color filters are provided on the light-emitting devices instead of lenses. A red color filter 138R is provided on the light-emitting device 130R that emits red light, and a green color filter 138G is provided on the light-emitting device 130G that emits green light. Although not shown, a blue color filter is provided on the light-emitting device that emits blue light. This configuration can improve the color purity of the light emitted from the light-emitting device to the outside of the substrate 120. Furthermore, providing color filters can suppress reflection on the display surface, making an anti-reflection polarizing plate unnecessary.

[0342] When color filters are used, a white-emitting light-emitting device may be used as shown in Fig. 22B. A pixel emitting red light is provided with a white-emitting light-emitting device 130RW and a red color filter 138R. A pixel emitting green light is provided with a white-emitting light-emitting device 130GW and a green color filter 138G. Although not shown, a pixel emitting blue light is provided with a white-emitting light-emitting device and a blue color filter.

[0343] 23A , the lenses and color filters may be provided so as to overlap each other on the light-emitting device. For example, a light-shielding layer 135 and a lens 133 are formed on a substrate 152, and a planarization film 139 is formed on the light-shielding layer 135 and the lens 133. Then, color filters 138R and 138G can be formed on the planarization film 139 at positions that overlap the lens 133. Note that a blue color filter can also be formed in the same way.

[0344] 23B , lenses 133 overlapping with the light-shielding layer 135, color filters 138R and 138G, and light-receiving device 150P are formed on a substrate 152, and a planarization film 139 is formed on the lenses 133 overlapping with the light-shielding layer 135, color filters 138R and 138G, and light-receiving device 150P. Then, lenses 133 can be formed on the planarization film 139 at positions overlapping with the color filters 138R and 138G. Lenses 133 can also be formed in positions overlapping with the blue color filter.

[0345] Although FIGS. 23A and 23B show examples in which light-emitting devices that emit red light and green light, respectively, a light-emitting device that emits white light may also be used.

[0346] This embodiment mode can be combined with other embodiment modes as appropriate.

[0347] Embodiment 5 In this embodiment, structural examples of a light-emitting device and a light-receiving device that can be used for a display device of one embodiment of the present invention will be described.

[0348] 24A shows a schematic cross-sectional view of a display device 500. The display device 500 has a light-emitting device 550R that emits red light, a light-emitting device 550G that emits green light, a light-emitting device 550B that emits blue light, and a light-receiving device 560.

[0349] The light-emitting device 550R has a configuration in which two light-emitting units (light-emitting unit 512R_1 and light-emitting unit 512R_2) are stacked between a pair of electrodes (electrode 501 and electrode 502) via a charge generation layer 531. Similarly, the light-emitting device 550G has a light-emitting unit 512G_1, a charge generation layer 531, and a light-emitting unit 512G_2 between the pair of electrodes, and the light-emitting device 550B has a light-emitting unit 512B_1, a charge generation layer 531, and a light-emitting unit 512B_2 between the pair of electrodes.

[0350] The light-receiving device 560 has one light-receiving unit 542 between a pair of electrodes (electrode 501 and electrode 502).

[0351] The electrode 501 functions as a pixel electrode and is provided for each light-emitting device and each light-receiving device, while the electrode 502 functions as a common electrode and is provided in common to a plurality of light-emitting devices and a plurality of light-receiving devices.

[0352] 24A , the light-emitting unit 512R_1 includes a layer 521, a layer 522, a light-emitting layer 523R, and a layer 524. The light-emitting unit 512R_2 includes a layer 522, a light-emitting layer 523R, and a layer 524. The light-emitting device 550R also includes a layer 525 between the light-emitting unit 512R_2 and the electrode 502. Note that the layer 525 can also be considered as part of the light-emitting unit 512R_2.

[0353] In a light-emitting device in which the electrode 501 functions as an anode and the electrode 502 functions as a cathode, the layer 521 includes, for example, a layer containing a substance with high hole-injecting properties (hole-injecting layer). The layer 522 includes, for example, one or both of a layer containing a substance with high hole-transporting properties (hole-transporting layer) and a layer containing a substance with high electron-blocking properties (electron-blocking layer). The layer 524 includes, for example, one or both of a layer containing a substance with high electron-transporting properties (electron-transporting layer) and a layer containing a substance with high hole-blocking properties (hole-blocking layer). The layer 525 includes, for example, a layer containing a substance with high electron-injecting properties (electron-injecting layer).

[0354] In a light-emitting device, if electrode 501 functions as a cathode and electrode 502 functions as an anode, for example, layer 521 comprises an electron injection layer, layer 522 comprises one or both of an electron transport layer and a hole blocking layer, layer 524 comprises one or both of a hole transport layer and an electron blocking layer, and layer 525 comprises a hole injection layer.

[0355] The layer 522, the light-emitting layer 523R, and the layer 524 may have the same configuration (material, film thickness, etc.) between the light-emitting unit 512R_1 and the light-emitting unit 512R_2, or may have different configurations.

[0356] 24A illustrates the layer 521 and the layer 522 separately, but the present invention is not limited to this. For example, when the layer 521 has a function of both a hole injection layer and a hole transport layer, or when the layer 521 has a function of both an electron injection layer and an electron transport layer, the layer 522 may be omitted.

[0357] When a light-emitting device with a tandem structure is fabricated, two light-emitting units are stacked via a charge generation layer 531. The charge generation layer 531 has at least a charge generation region. The charge generation layer 531 has a function of injecting electrons into one of the light-emitting unit 512R_1 and the light-emitting unit 512R_2 and injecting holes into the other when a voltage is applied between the electrode 501 and the electrode 502.

[0358] The light-emitting layer 523R of the light-emitting device 550R contains a light-emitting substance (also referred to as a light-emitting material) that emits red light, the light-emitting layer 523G of the light-emitting device 550G contains a light-emitting substance that emits green light, and the light-emitting layer 523B of the light-emitting device 550B contains a light-emitting substance that emits blue light. Note that the light-emitting devices 550G and 550B have a configuration in which the light-emitting layer 523R of the light-emitting device 550R is replaced with the light-emitting layer 523G or the light-emitting layer 523B, respectively, and the other configurations are the same as those of the light-emitting device 550R.

[0359] Note that layers 521, 522, 524, and 525 may each have the same configuration (material, film thickness, etc.) in light-emitting devices of two or more colors or all colors, or may have different configurations in light-emitting devices of all colors.

[0360] A configuration in which multiple light-emitting units are connected in series via the charge generation layer 531, such as light-emitting device 550R, light-emitting device 550G, and light-emitting device 550B, is referred to herein as a tandem structure. On the other hand, a configuration having one light-emitting unit between a pair of electrodes is referred to as a single structure. The tandem structure may also be referred to as a stack structure. The tandem structure can be used to create a light-emitting device capable of emitting high-brightness light. Furthermore, compared to a single structure, the tandem structure can reduce the current required to obtain the same brightness, thereby improving the reliability of the light-emitting device.

[0361] Furthermore, a structure in which at least a light-emitting layer is separately fabricated for each light-emitting device, such as light-emitting device 550R, light-emitting device 550G, and light-emitting device 550B, is sometimes called an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting device, increasing the degree of freedom in material and configuration selection and facilitating improvements in brightness and reliability.

[0362] When a tandem light-emitting device is applied to the display device 500 of one embodiment of the present invention and has an SBS structure, both the advantages of the tandem structure and the SBS structure can be achieved. The light-emitting device in the display device 500 shown in FIG. 24A may be referred to as a two-tier tandem structure because the light-emitting units are formed in two tiers in series. Furthermore, the light-emitting device 550R with the two-tier tandem structure shown in FIG. 24A has a structure in which a second light-emitting unit having a red light-emitting layer is stacked on a first light-emitting unit having a red light-emitting layer. Similarly, the light-emitting device 550G with the two-tier tandem structure shown in FIG. 24A has a structure in which a second light-emitting unit having a green light-emitting layer is stacked on a first light-emitting unit having a green light-emitting layer, and the light-emitting device 550B has a structure in which a second light-emitting unit having a blue light-emitting layer is stacked on a first light-emitting unit having a blue light-emitting layer.

[0363] As shown in FIG. 12A, the light-receiving device 560 includes a light-receiving unit 542 having a layer 522 , an active layer 543 , and a layer 524 .

[0364] The active layer 543 functions as a photoelectric conversion layer. In a light-receiving device, when the electrode 501 functions as an anode and the electrode 502 functions as a cathode, for example, the layer 522 has a hole transport layer and the layer 524 has an electron transport layer. When the electrode 501 is a cathode and the electrode 502 is an anode, the layers 522 and 524 have the opposite configurations.

[0365] The layers 522 and 524 of the light receiving device may each have the same configuration (material, film thickness, etc.) as the light emitting devices of one or more colors or all colors, or may have a different configuration from the light emitting devices of all colors.

[0366] 24B is a modified example of the display device 500 shown in FIG. 24A. The display device 500 shown in FIG. 24B is an example in which a layer 525 is shared by a plurality of light-emitting devices and a plurality of light-receiving devices, similar to the electrode 502. In this case, the layer 525 can be called a common layer. By providing one or more common layers between a plurality of light-emitting devices and a plurality of light-receiving devices in this manner, the manufacturing process can be simplified, and therefore, manufacturing costs can be reduced.

[0367] Layer 525 may function, for example, as an electron injection layer in a light-emitting device and as an electron transport layer in a light-receiving device 560 .

[0368] The display device 500 shown in FIG. 25A is an example of a light-emitting device in which three light-emitting units are stacked. In FIG. 25A , the light-emitting device 550R has a light-emitting unit 512R_3 stacked on top of the light-emitting unit 512R_2, with a charge generation layer 531 interposed therebetween. The light-emitting unit 512R_3 has a similar configuration to the light-emitting unit 512R_2. The light-emitting unit 512G_3 of the light-emitting device 550G and the light-emitting unit 512B_3 of the light-emitting device 550B also have similar configurations. Note that when the light-emitting device has multiple charge generation layers 531, two or more or all of the multiple charge generation layers 531 may have the same configuration (material, film thickness, etc.), or all may have different configurations.

[0369] FIG. 25B shows an example in which n light-emitting units (n is an integer of 2 or more) are stacked.

[0370] In this way, by increasing the number of stacked light-emitting units, the luminance obtained from the light-emitting device with the same amount of current can be increased in proportion to the number of stacked light-emitting units.Furthermore, by increasing the number of stacked light-emitting units, the current required to obtain the same luminance can be reduced, and therefore the power consumption of the light-emitting device can be reduced in proportion to the number of stacked light-emitting units.

[0371] Next, materials that can be used in light-emitting devices and light-receiving devices will be described.

[0372] Of the electrodes 501 and 502, a conductive film that transmits visible light is used for the electrode that extracts light from the light-emitting device. It is preferable to use a conductive film that reflects visible light for the electrode that does not extract the light. When the display device has a light-emitting device that emits infrared light, it is preferable to use a conductive film that transmits visible light and infrared light for the electrode that extracts light, and a conductive film that reflects visible light and infrared light for the electrode that does not extract light.

[0373] A conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted. In this case, it is preferable to place the electrode between the reflective layer and the light-emitting unit closest to the reflective layer. In other words, light emitted from the light-emitting device may be reflected by the reflective layer and extracted from the display device.

[0374] Materials for forming the pair of electrodes of the light-emitting device and the light-receiving device can include metals, alloys, electrically conductive compounds, and mixtures thereof. Specific examples of such materials include metals such as aluminum, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, as well as alloys containing appropriate combinations of these metals. Examples of such materials include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), and In-W-Zn oxide. Examples of such materials include aluminum alloys, such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of the material include elements belonging to Group 1 or 2 of the periodic table (e.g., lithium, cesium, calcium, and strontium) that are not listed above as examples, rare earth metals such as europium and ytterbium, alloys containing appropriate combinations of these, and graphene.

[0375] A micro-optical resonator (microcavity) structure is preferably applied to the light-emitting device. Therefore, it is preferable that one of a pair of electrodes of the light-emitting device has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (reflective electrode). By having the light-emitting device have a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, thereby intensifying the light emitted from the light-emitting device. Furthermore, a microcavity structure may also be applied to a light-receiving device.

[0376] The semi-transmitting / semi-reflective electrode can have a stacked structure of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode that is transparent to visible light (also referred to as a transparent electrode).

[0377] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode having a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the transparent electrode of a light-emitting device. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ Preferably, it is Ωcm or less.

[0378] The light-emitting device has at least a light-emitting layer. The light-emitting device may further include a layer other than the light-emitting layer, which layer contains a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, an electron-blocking material, a substance with high electron-injection properties, or a bipolar substance (a substance with high electron-transport properties and high hole-transport properties). For example, the light-emitting device may have, in addition to the light-emitting layer, one or more layers selected from a hole-injection layer, a hole-transport layer, a hole-blocking layer, a charge-generating layer, an electron-blocking layer, an electron-transport layer, and an electron-injection layer.

[0379] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0380] The light-emitting layer contains one or more light-emitting materials. As the light-emitting material, a material that emits light of blue, purple, blue-purple, green, yellow-green, yellow, orange, red, or the like is appropriately used. Furthermore, a material that emits near-infrared light can also be used as the light-emitting material.

[0381] The light-emitting material may include a fluorescent material, a phosphorescent material, a TADF material, and a quantum dot material.

[0382] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0383] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0384] The light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). As the one or more organic compounds, one or both of a substance with high hole transport properties (hole transport material) and a substance with high electron transport properties (electron transport material) can be used. As the hole-transporting material, a material with high hole transport properties that can be used in the hole-transporting layer, which will be described later, can be used. As the electron-transporting material, a material with high electron transport properties that can be used in the electron-transporting layer, which will be described later, can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material may be used.

[0385] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0386] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0387] As the hole transporting material, a material having high hole transporting properties that can be used for the hole transport layer, which will be described later, can be used.

[0388] Examples of acceptable materials include oxides of metals belonging to Groups 4 to 8 of the periodic table. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. Also, organic acceptable materials containing fluorine can be used. Other acceptable materials include quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives.

[0389] For example, as a material with high hole injection properties, a material containing a hole transporting material and an oxide of a metal belonging to Groups 4 to 8 of the periodic table (typically, molybdenum oxide) may be used.

[0390] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 −６ cm ２ A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0391] The electron blocking layer is provided in contact with the light-emitting layer. The electron blocking layer is a layer containing a material that has hole transport properties and can block electrons. The electron blocking layer can be made of a material that has electron blocking properties among the hole transport materials described above.

[0392] The electron blocking layer has hole transport properties and can therefore also be called a hole transport layer. Furthermore, a layer of the hole transport layer that has electron blocking properties can also be called an electron blocking layer.

[0393] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0394] The hole-blocking layer is provided in contact with the light-emitting layer. The hole-blocking layer is a layer containing a material that has electron transport properties and can block holes. The hole-blocking layer can be made of a material that has hole-blocking properties and is selected from the above electron-transporting materials.

[0395] The hole blocking layer has electron transport properties and can therefore also be called an electron transport layer. Furthermore, a layer of the electron transport layer that has hole blocking properties can also be called a hole blocking layer.

[0396] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0397] Furthermore, it is preferable that the LUMO level of a material with high electron injection properties has a small difference (specifically, 0.5 eV or less) from the work function value of the material used for the cathode.

[0398] The electron injection layer may contain, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ｘ , where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO ｘ ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used as the first layer and ytterbium is provided as the second layer.

[0399] The electron injection layer may contain an electron transporting material. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring can be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

[0400] The lowest unoccupied molecular orbital (LUMO) level of an organic compound having an unshared electron pair is preferably −3.6 eV or more and −2.3 eV or less. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0401] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition point (Tg) and is superior in heat resistance compared to BPhen.

[0402] As described above, the charge generation layer has at least a charge generation region. The charge generation region preferably contains an acceptor material, and for example, it is preferable to use a layer containing a hole transport material and an acceptor material that can be used for the hole injection layer.

[0403] The charge generation layer preferably includes a layer containing a material with high electron injection properties. This layer may also be called an electron injection buffer layer. The electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. By providing the electron injection buffer layer, the injection barrier between the charge generation region and the electron transport layer can be alleviated, so that electrons generated in the charge generation region can be easily injected into the electron transport layer.

[0404] The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and may contain, for example, an alkali metal compound or an alkaline earth metal compound. Specifically, the electron injection buffer layer preferably contains an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen, and may contain an inorganic compound containing lithium and oxygen (lithium oxide (Li ２ In addition, the electron injection buffer layer can be suitably made of the materials applicable to the electron injection layer described above.

[0405] The charge generation layer preferably has a layer containing a material with high electron transport properties. This layer can also be called an electron relay layer. The electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. When the charge generation region does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer. The electron relay layer has the function of preventing interaction between the charge generation region and the electron injection buffer layer (or the electron transport layer) and smoothly transferring electrons.

[0406] For the electron relay layer, it is preferable to use a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviated as CuPc) or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0407] It should be noted that the charge generation region, electron injection buffer layer, and electron relay layer may not be clearly distinguishable from one another depending on their cross-sectional shapes or characteristics.

[0408] The charge generation layer may contain a donor material instead of an acceptor material. For example, the charge generation layer may contain a layer containing an electron transport material and a donor material that can be used for the electron injection layer.

[0409] When light-emitting units are stacked, an increase in driving voltage can be suppressed by providing a charge generating layer between two light-emitting units.

[0410] 24A , the light-emitting materials of the light-emitting layers are not particularly limited. For example, in FIG. 24A , two light-emitting layers 523R of light-emitting device 550R each contain a phosphorescent material, two light-emitting layers 523G of light-emitting device 550G each contain a fluorescent material, and two light-emitting layers 523B of light-emitting device 550B each contain a fluorescent material.

[0411] Alternatively, in FIG. 24A , the two light-emitting layers 523R of the light-emitting device 550R each have a phosphorescent material, the two light-emitting layers 523G of the light-emitting device 550G each have a phosphorescent material, and the two light-emitting layers 523B of the light-emitting device 550B each have a fluorescent material.

[0412] Furthermore, in the display device of one embodiment of the present invention, a structure in which a fluorescent material is used for all light-emitting layers of the light-emitting devices 550R, 550G, and 550B, or a structure in which a phosphorescent material is used for all light-emitting layers of the light-emitting devices 550R, 550G, and 550B, may be applied.

[0413] 24A , a configuration in which a phosphorescent material is used for the light-emitting layer 523R of the light-emitting unit 512R_1 and a fluorescent material is used for the light-emitting layer 523R of the light-emitting unit 512R_2, or a configuration in which a fluorescent material is used for the light-emitting layer 523R of the light-emitting unit 512R_1 and a phosphorescent material is used for the light-emitting layer 523R of the light-emitting unit 512R_2, that is, a configuration in which different light-emitting materials are used for the light-emitting layers in the first and second stages, may be applied. Note that although the description here has been made with respect to the light-emitting units 512R_1 and 512R_2, a similar configuration can also be applied to the light-emitting units 512G_1 and 512G_2, and the light-emitting units 512B_1 and 512B_2.

[0414] The light-receiving device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0415] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0416] The n-type semiconductor material of the active layer is fullerene (e.g., C ６０ , C ７０ Examples of the fullerene derivatives include [6,6]-phenyl-C ７１ -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C ６１ -butyric acid methyl ester (abbreviation: PC60BM), 1', 1'', 4', 4''-Tetrahydro-di [1, 4] methanonaphthaleno [1, 2: 2', 3', 56, 60: 2'', 3''] [5, 6] fullerene-C ６０ (abbreviation: ICBA) and others.

[0417] Examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N′-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI), and 2,2′-(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0418] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0419] Examples of p-type semiconductor materials contained in the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0420] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0421] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0422] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0423] Furthermore, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used in the active layer. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0424] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0425] The active layer may also contain a mixture of three or more materials. For example, in order to expand the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0426] The light-receiving device may further include a layer containing a substance with high hole transport properties, a substance with high electron transport properties, or a bipolar substance (a substance with high electron transport properties and high hole transport properties) as a layer other than the active layer. For example, the light-receiving device may have a structure including one or both of a hole transport layer and an electron transport layer in addition to the active layer. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing a substance with high hole injection properties, a hole blocking material, a material with high electron injection properties, or an electron blocking material. For the layer other than the active layer of the light-receiving device, for example, the materials that can be used in the above-mentioned light-emitting devices can be used.

[0427] For example, the hole transport material or electron blocking material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI). The electron transport material or hole blocking material may be an inorganic compound such as zinc oxide (ZnO), or an organic compound such as polyethyleneimine ethoxylate (PEIE). The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0428] This embodiment mode can be combined with other embodiment modes as appropriate.

[0429] Embodiment 6 In this embodiment, a display device having a light detection function according to one embodiment of the present invention will be described.

[0430] A display device according to one embodiment of the present invention has a display portion in which light-emitting devices are arranged in a matrix, and can display an image. Furthermore, light-receiving devices are arranged in a matrix in the display portion, and the display portion has an imaging function and / or a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, it is possible to capture an image or detect the proximity or contact of an object (such as a finger, a hand, or a pen).

[0431] Furthermore, in the display device of one embodiment of the present invention, the light-emitting device can be used as a light source for a sensor. In the display device of one embodiment of the present invention, when light emitted from the light-emitting device included in the display portion is reflected (or scattered) by an object, the light-receiving device can detect the reflected light (or scattered light), thereby enabling imaging or touch detection even in a dark place.

[0432] Therefore, a light receiving unit and a light source are not required to be provided separately from the display device, and the number of components in the electronic device can be reduced. For example, a biometric authentication device or a capacitive touch panel for scrolling or the like is not required to be provided separately in the electronic device. Therefore, by using the display device of one embodiment of the present invention, an electronic device with reduced manufacturing costs can be provided.

[0433] Specifically, a display device according to one embodiment of the present invention has a light-emitting device and a light-receiving device in each pixel. In the display device according to one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using an organic EL device.

[0434] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0435] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0436] For example, an image sensor can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), faces, or the like.

[0437] For example, an image sensor can be used to capture images of the area around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of a user of the wearable device. Therefore, the wearable device can have a function to detect one or more of the user's blinking, movement of the pupil, and movement of the eyelid.

[0438] The light receiving device can also be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).

[0439] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0440] A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not touch the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is between 0.1 mm and 300 mm, preferably between 3 mm and 50 mm, is preferred. This configuration allows the display device to be operated without the object directly touching it, in other words, it allows the display device to be operated in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or allows the object to operate the display device without directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0441] Furthermore, the display device of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, adjusted within a range of 1 Hz to 240 Hz) depending on the content displayed on the display device to reduce power consumption. Furthermore, the drive frequency of the touch sensor or the near-touch sensor may be changed depending on the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or the near-touch sensor can be configured to be higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or the near-touch sensor.

[0442] In addition, in the display device of one embodiment of the present invention, a lens can be provided over the light-receiving device. By making the width of the lens larger than the width of the light-receiving portion, the light-collection ability can be increased, and the photosensitivity of the light-receiving device can be improved.

[0443] The display device 100 shown in FIGS. 26A to 26C has, between a substrate 351 and a substrate 359, a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device.

[0444] The functional layer 355 has a circuit for driving the light-receiving device and a circuit for driving the light-emitting device. The functional layer 355 may be provided with one or more of a switch, a transistor, a capacitor, a resistor, a wiring, a terminal, etc. Note that when the light-emitting device and the light-receiving device are driven by a passive matrix method, a configuration without a switch or a transistor may be used.

[0445] 26A , when a finger 352 touches the display device 100, the light emitted by the light-emitting device in the layer 357 having the light-emitting device is reflected by the finger 352, and the reflected light is detected by the light-receiving device in the layer 353 having the light-receiving device. This makes it possible to detect that the finger 352 has touched the display device 100.

[0446] 26B and 26C, the display device may have a function of detecting or capturing an object that is close to (not in contact with) the display device. Fig. 26B shows an example of detecting a person's finger, and Fig. 26C shows an example of detecting information about the periphery, surface, or interior of a person's eye (such as the number of blinks, eyeball movement, and eyelid movement).

[0447] This embodiment mode can be combined with other embodiment modes as appropriate.

[0448] Embodiment 7 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0449] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0450] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0451] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (e.g., head-mounted displays), AR glasses-type devices, and MR devices.

[0452] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0453] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0454] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0455] 27A to 27D , examples of wearable devices that can be worn on the head are described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device have the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the sense of immersion felt by the user.

[0456] The electronic device 700A shown in FIG. 27A and the electronic device 700B shown in FIG. 27B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0457] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying images with extremely high resolution can be provided. In addition, the display device of one embodiment of the present invention has high light extraction efficiency because light emitted from a light-emitting portion is extracted through a lens, and therefore can display extremely bright images. Therefore, when used as an electronic device capable of AR display, an image with good visibility can be displayed even in strong external light.

[0458] Furthermore, if the display device has a light-receiving device, the light-receiving device can capture an image of the user's pupils and perform iris authentication. The light-receiving device can also be used to track the user's gaze. By tracking the user's gaze, it is possible to identify what the user is looking at and where they are, allowing the user to select functions that the electronic device has and execute software.

[0459] Each of electronic devices 700A and 700B can project an image displayed on display panel 751 onto display area 756 of optical member 753. Because optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through optical member 753. Therefore, each of electronic devices 700A and 700B is an electronic device capable of AR display.

[0460] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image of the front as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0461] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0462] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0463] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation or a slide operation by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0464] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0465] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0466] The electronic device 800A shown in Figure 27C and the electronic device 800B shown in Figure 27D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0467] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, an electronic device capable of displaying images with extremely high definition can be provided. This allows a user to feel a high sense of immersion.

[0468] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0469] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0470] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0471] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. Note that, in Fig. 27C and other figures, the mounting unit 823 is shaped like the temples of glasses, but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0472] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0473] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0474] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0475] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0476] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 includes a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, an electronic device 700A shown in FIG. 27A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, an electronic device 800A shown in FIG. 27C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0477] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 27B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0478] Similarly, electronic device 800B shown in Fig. 27D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0479] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0480] As such, as electronic devices of one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0481] Furthermore, the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.

[0482] The electronic device 6500 shown in FIG. 28A is a portable information terminal that can be used as a smartphone.

[0483] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0484] The display device of one embodiment of the present invention can be applied to the display portion 6502. In the display device of one embodiment of the present invention, light emitted from a light-emitting portion is extracted through a lens, and thus light extraction efficiency is high and an extremely bright image can be displayed.

[0485] FIG. 28B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0486] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0487] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown). The function of the touch sensor panel can also be performed by a light-receiving device included in the display device of one embodiment of the present invention. The light-receiving device included in the display device of one embodiment of the present invention detects light through a lens, has high light sensitivity, and is excellent in the ability to detect a touch position. In addition, the light-receiving device can also acquire an image for fingerprint authentication.

[0488] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0489] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0490] 28C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0491] The display device of one embodiment of the present invention can be applied to the display portion 7000. In the display device of one embodiment of the present invention, light emitted from a light-emitting portion is extracted through a lens, and thus light extraction efficiency is high and an extremely bright image can be displayed.

[0492] 28C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0493] The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0494] 28D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0495] The display device of one embodiment of the present invention can be applied to the display portion 7000. In the display device of one embodiment of the present invention, light emitted from a light-emitting portion is extracted through a lens, and thus light extraction efficiency is high and an extremely bright image can be displayed.

[0496] 28E and 28F show an example of digital signage.

[0497] 28E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0498] 28F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0499] 28E and 28F , the display device of one embodiment of the present invention can be applied to the display portion 7000. In the display device of one embodiment of the present invention, light emitted from a light-emitting portion is extracted through a lens, and thus the light extraction efficiency is high and an extremely bright image can be displayed.

[0500] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0501] Applying a touch panel to the display portion 7000 is preferable because it not only displays images or videos on the display portion 7000 but also allows a user to intuitively operate the display portion 7000. Furthermore, when the touch panel is used to provide information such as route information or traffic information, the intuitive operation can improve usability. The touch panel can also be configured using a light-receiving device included in the display device of one embodiment of the present invention. The light-receiving device included in the display device of one embodiment of the present invention detects light through a lens and has high light sensitivity. Therefore, the touch panel can be highly sensitive and has excellent touch position detection capabilities.

[0502] 28E and 28F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0503] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0504] The electronic device shown in Figures 29A to 29G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0505] The electronic devices shown in Figures 29A to 29G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0506] Details of the electronic devices illustrated in FIGS. 29A to 29G are described below. Note that the display device of one embodiment of the present invention can be applied to these electronic devices. In the display device of one embodiment of the present invention, light emitted from a light-emitting portion is extracted through a lens, and thus light extraction efficiency is high and an extremely bright image can be displayed. Furthermore, these electronic devices can have a function of a touch sensor panel. The function of the touch sensor panel can also be performed by a light-receiving device included in the display device of one embodiment of the present invention. The light-receiving device included in the display device of one embodiment of the present invention detects light through a lens, has high photosensitivity, and is excellent in the ability to detect a touch position. Furthermore, the light-receiving device can also acquire an image for fingerprint authentication.

[0507] FIG. 29A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 28A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0508] 29B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. A user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display and decide whether to answer a call without taking the mobile information terminal 9102 out of the pocket.

[0509] 29C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0510] FIG. 29D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with a wireless headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0511] 29E to 29G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 29E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 29G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 29F is a perspective view of a state in the process of changing from one of FIGS. 29E and 29G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0512] This embodiment mode can be combined with other embodiment modes as appropriate.

[0513] 100A: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100: display device, 101: layer, 110a: subpixel, 110b: subpixel, 110c: subpixel, 110d: subpixel, 110e: subpixel, 110: pixel, 111c: pixel electrode, 111d: pixel electrode, 112a: conductive layer, 112b: conductive layer, 112d: conductive layer, 113_1: light-emitting unit, 113_2: light-emitting unit, 113_3: charge generation layer, 113c: layer, 113d: layer, 114: common layer, 115a: translucent conductive film, 115b: semi-reflective electrode, 1 15: common electrode, 118c: mask layer, 118d: mask layer, 120: substrate, 122: adhesive layer, 123: conductive layer, 125: insulating layer, 126a: conductive layer, 126b: conductive layer, 126d: conductive layer, 127: insulating layer, 128: layer, 129a: conductive layer, 129b: conductive layer, 129d: conductive layer, 130c: light-emitting device, 130G: light-emitting device, 130GW: light-emitting device, 130R: light-emitting device, 130RW: light-emitting device, 131: protective layer, 133a: resin layer, 133b: resin layer, 133c: resin layer, 133F: flat region, 133R: convex curved region, 133: Lens, 135: light-shielding layer, 136: lens, 137: planarization film, 138G: color filter, 138R: color filter, 139: planarization film, 140: connection portion, 145: photomask, 150P: light-receiving device, 150: light-receiving device, 151: substrate, 152: substrate, 162: display portion, 164: circuit, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 201: transistor, 204: connection portion, 205: transistor, 209: transistor, 210: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer , 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer,274: plug, 280: display module, 281: display section, 282: circuit section, 283a: pixel circuit, 283: pixel circuit section, 284a: pixel, 284: pixel section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301: substrate, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 32 7: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 351: substrate, 352: finger, 353: layer, 355: functional layer, 357: layer, 359: substrate, 500: display device, 501: electrode, 502: electrode, 512B_1: light-emitting unit, 512B_2: light-emitting unit, 512B_3: light-emitting unit, 512G_1: light-emitting unit, 512G_2: light-emitting unit, 512G_3: light-emitting unit, 512R_1: light-emitting unit, 512R_2: light-emitting unit, 512R_3: light-emitting unit, 521: layer, 522: layer, 523B: light-emitting layer, 523 G: light-emitting layer, 523R: light-emitting layer, 524: layer, 525: layer, 531: charge generation layer, 542: light-receiving unit, 543: active layer, 550B: light-emitting device, 550G: light-emitting device, 550R: light-emitting device, 560: light-receiving device, 700A: electronic device, 700B: electronic device, 721: housing, 723: wearing part, 727: earphone part, 750: earphone, 751: display panel, 753: optical member, 756: display area, 757: frame, 758: nose pad, 800A: electronic device, 800B: electronic device, 820: display part, 821: housing, 822: communication part, 82 3: mounting part, 824: control part, 825: imaging part, 827: earphone part, 832: lens, 6500: electronic device, 6501: housing, 6502: display part, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display part, 7100: television device, 7101: housing, 7103: stand,7111: remote control device, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: digital signage, 7401: pillar, 7411: information terminal, 9000: housing, 9001: display unit, 9002: camera, 9003: speaker, 9005: operation keys, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: icon, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9101: mobile information terminal, 9102: mobile information terminal, 9103: tablet terminal, 9200: mobile information terminal, 9201: mobile information terminal,

Claims

1. a first pixel and a second pixel; the first pixel having a light-emitting device; the second pixel includes a light receiving device and a lens; the light-emitting device and the light-receiving device have a common electrode; the lens and the light-receiving device have an overlapping area; a width of the lens is greater than a width of a light receiving portion of the light receiving device; The lens has a substantially trapezoidal cross section in a thickness direction including an optical axis, a surface including a leg of the approximately trapezoid is a convex curved surface, a surface including an upper base of the substantially trapezoid and the light receiving unit are provided so as to face each other; the first pixel and the second pixel are provided adjacent to each other, the light emitting device is a tandem type; The tandem light-emitting device has a plurality of light-emitting units, The display device, wherein the plurality of light-emitting units emit light of the same color.

2. In claim 1, A display device in which a light-shielding layer is formed around the lens.

3. In claim 1 or 2, A display device in which a surface including an upper base of the approximately trapezoid has a convex curved surface.

4. In any one of claims 1 to 3, The display device, wherein the lens and the light receiving device are spaced apart so that their centers overlap.

5. a first pixel and a second pixel; the first pixel includes a light-emitting device and a first lens; the second pixel includes a light receiving device and a second lens; the light-emitting device and the light-receiving device have a common electrode; the first lens and the light emitting device have overlapping regions; the second lens and the light-receiving device have overlapping regions; a width of the first lens is greater than a width of a light-emitting portion of the light-emitting device; a width of the second lens is greater than a width of a light receiving portion of the light receiving device; the first lens and the second lens have a substantially trapezoidal cross section in a thickness direction including an optical axis, a surface including a leg of the approximately trapezoid is a convex curved surface, a surface of the first lens including an upper base of the substantially trapezoidal shape and the light-emitting portion are provided to face each other, a surface of the second lens including an upper base of the substantially trapezoidal shape and the light receiving unit are provided to face each other, the first pixel and the second pixel are provided adjacent to each other, the light emitting device is a tandem type; The tandem light-emitting device has a plurality of light-emitting units, The display device, wherein the plurality of light-emitting units emit light of the same color.

6. In claim 5, A display device in which a light-shielding layer is formed around the first lens and the second lens.

7. In claim 5, A display device in which a light-shielding layer is formed around the second lens.

8. In any one of claims 5 to 7, A display device in which the first lens and the second lens have a convex curved surface that includes an upper base of the approximately trapezoid.

9. In any one of claims 5 to 8, A display device in which the first lens and the light-emitting device are spaced apart so that their centers overlap, and the second lens and the light-receiving device are spaced apart so that their centers overlap.

10. A display device according to any one of claims 1 to 9, An electronic device that acquires a fingerprint image using the light-receiving device and performs fingerprint authentication.