Display device

Abstract

Provided is a display device having an imaging function. Provided is an imaging device or a display device capable of imaging with high sensitivity. The display device comprises a first substrate, a second substrate facing the first substrate, light-emitting elements on the first substrate, a light-receiving element adjacent to the light-emitting element, a first light-shielding layer on the first substrate, a second light-shielding layer on the surface of the second substrate facing the first substrate, and a third light-shielding layer on the surface of the second light-shielding layer facing the first substrate. The first to third light-shielding layers are each provided between the light-emitting element and the light-receiving element in plan view. The first light-shielding layer and the third light-shielding layer are provided so as to have a gap therebetween in plan view.

Description

display device

[0001] FIELD OF THE INVENTION One aspect of the present invention relates to a display device, an imaging device, and a display device having an imaging function.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, light-emitting devices, power storage devices, memory devices, lighting devices, input devices, output devices, input / output devices, electronic devices including these devices, driving methods thereof, or manufacturing methods thereof. A semiconductor device refers to any device that can function by utilizing semiconductor characteristics.

[0003] In recent years, display devices have been required to have higher definition in order to display high-resolution images. Furthermore, in information terminal devices such as smartphones, tablet terminals, and notebook PCs (personal computers), display devices are required to have not only high definition but also low power consumption. Furthermore, display devices that not only display images but also have various additional functions, such as a touch panel function or a function for capturing fingerprints for authentication, are being demanded.

[0004] As a display device, for example, a light-emitting device having a light-emitting element (also referred to as a light-emitting device) has been developed. Light-emitting elements (also referred to as EL elements) that utilize the electroluminescence (hereinafter referred to as EL) phenomenon have features such as being easily thin and lightweight, being capable of responding quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are therefore applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device that uses an organic EL element.

[0005] JP 2014-197522 A

[0006] An object of one embodiment of the present invention is to provide a display device having an imaging function. An object of one embodiment of the present invention is to provide a display device with high display quality. An object of one embodiment of the present invention is to provide a high-resolution imaging device or display device. An object of one embodiment of the present invention is to reduce noise during imaging. An object of one embodiment of the present invention is to provide an imaging device or display device capable of capturing images with high sensitivity. An object of one embodiment of the present invention is to provide a display device or imaging device with a high aperture ratio. An object of one embodiment of the present invention is to provide a display device that can acquire biometric information such as a fingerprint. An object of one embodiment of the present invention is to provide a display device that functions as a touch panel. An object of one embodiment of the present invention is to provide a highly reliable display device or imaging device, or an electronic device including such a device. An object of one embodiment of the present invention is to provide a display device or imaging device having a novel structure, or an electronic device including such a device. An object of one embodiment of the present invention is to alleviate at least one of the problems associated with the prior art.

[0007] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily have to solve all of these problems. Note that problems other than these can be extracted from the description in the specification, drawings, claims, etc.

[0008] One embodiment of the present invention is a display device including a first substrate, a second substrate facing the first substrate, a light-emitting element on the first substrate, a light-receiving element adjacent to the light-emitting element, a first light-shielding layer on the first substrate, a second light-shielding layer on a surface of the second substrate facing the first substrate, and a third light-shielding layer on a surface of the second light-shielding layer facing the first substrate, wherein the first to third light-shielding layers are provided between the light-emitting element and the light-receiving element, respectively, in a plan view, and a gap is formed between the first light-shielding layer and the third light-shielding layer in a plan view.

[0009] In the above, the first light-shielding layer, the second light-shielding layer, and the third light-shielding layer preferably contain a material that absorbs part of visible light.

[0010] In the above, the number of third light-shielding layers is preferably two or more.

[0011] In the above, the number of first light-shielding layers is preferably two or more.

[0012] In the above, it is preferable that an insulating layer is provided between the light emitting element and the light receiving element, and the first light-shielding layer is provided on the insulating layer.

[0013] In the above, the insulating layer is preferably a resin layer.

[0014] In the above, it is preferable that the light-emitting element contains a light-emitting material, and the light-receiving element contains a photoelectric conversion material.

[0015] In the above, it is preferable that the light emitting element has a colored layer and two or more light emitting layers.

[0016] In the above, it is preferable that a first lens is provided on the light emitting element.

[0017] Alternatively, in the above, it is preferable that a second lens is provided on the light receiving element.

[0018] Alternatively, in the above, it is preferable that a third lens is provided on the light-emitting element, and a fourth lens is provided on the light-receiving element.

[0019] In the above, the first to fourth lenses are preferably convex lenses having a convex shape on the side facing the second substrate.

[0020] Alternatively, in the above, it is preferable that the first to fourth lenses are lenses having a substantially trapezoidal cross section.

[0021] In the above, it is preferable that a fifth lens facing the first to fourth lenses is provided on the second substrate.

[0022] In the above, the fifth lens is preferably a convex lens having a convex shape on the side facing the first substrate.

[0023] Alternatively, in the above, it is preferable that the fifth lens is a lens having a substantially trapezoidal cross section.

[0024] According to one embodiment of the present invention, a display device having an imaging function can be provided. According to one embodiment of the present invention, a display device with high display quality can be provided. According to one embodiment of the present invention, a high-resolution imaging device or display device can be provided. According to one embodiment of the present invention, noise during imaging can be reduced. According to one embodiment of the present invention, an imaging device or display device capable of performing high-sensitivity imaging can be provided. According to one embodiment of the present invention, a display device or imaging device with a high aperture ratio can be provided. According to one embodiment of the present invention, a display device capable of acquiring biometric information such as a fingerprint can be provided. According to one embodiment of the present invention, a display device that functions as a touch panel can be provided. According to one embodiment of the present invention, a highly reliable display device or imaging device, or an electronic device including such a device can be provided. According to one embodiment of the present invention, a display device or imaging device having a novel structure, or an electronic device including such a device can be provided. According to one embodiment of the present invention, at least one of the problems of the prior art can be alleviated.

[0025] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0026] FIG. 1A is a top view showing a structural example of a display device. FIGS. 1B and 1C are cross-sectional views showing a structural example of a display device. FIGS. 2A and 2B are cross-sectional views showing a structural example of a display device. FIGS. 3A to 3C are cross-sectional views showing a structural example of a display device. FIGS. 4A to 4C are cross-sectional views showing a structural example of a display device. FIGS. 5A to 5C are cross-sectional views showing a structural example of a display device. FIGS. 6A to 6C are cross-sectional views showing a structural example of a display device. FIGS. 7A to 7C are cross-sectional views showing a structural example of a display device. FIGS. 8A to 8C are cross-sectional views showing a structural example of a display device. FIGS. 9A and 9B are cross-sectional views showing a structural example of a display device. FIGS. 10A and 10B are cross-sectional views showing a structural example of a display device. FIGS. 11A and 11B are cross-sectional views showing a structural example of a display device. FIGS. 12A and 12B are cross-sectional views showing a structural example of a display device. FIGS. 13A to 13C are cross-sectional views showing an example of a method for manufacturing a display device. FIGS. 14A and 14B are cross-sectional views showing an example of a method for manufacturing a display device. 15A to 15E are cross-sectional views illustrating an example of a method for manufacturing a display device. FIG. 16 is a perspective view illustrating an example of a display device. FIG. 17A is a cross-sectional view illustrating an example of a display device. FIG. 17B is a cross-sectional view illustrating an example of a transistor. FIGS. 18A, 18B, and 18D are cross-sectional views illustrating an example of a display device. FIGS. 18C and 18E are views illustrating an example of an image. FIGS. 18F to 18H are top views illustrating an example of a pixel. FIG. 19A is a cross-sectional view illustrating an example of a display device. FIGS. 19B to 19D are top views illustrating an example of a pixel. FIG. 20A is a cross-sectional view illustrating an example of a display device. FIGS. 20B to 20I are top views illustrating an example of a pixel. FIGS. 21A and 21B are views illustrating a structural example of a display device. FIGS. 22A to 22G are views illustrating a structural example of a display device. FIGS. 23A to 23F are views illustrating a structural example of a pixel. FIGS. 23G and 23H are views illustrating an example of a circuit diagram of a pixel. FIG. 24A is a perspective view illustrating an example of an electronic device. Fig. 24B is a cross-sectional view showing an example of an electronic device. Figs. 25A to 25D are diagrams showing an example of an electronic device. Figs. 26A to 26F are diagrams showing an example of an electronic device. Figs. 27A to 27F are diagrams showing an example of an electronic device.

[0027] Hereinafter, embodiments will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways and that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the following embodiments.

[0028] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used and no particular reference numeral may be assigned.

[0029] In the drawings described in this specification, the size of each component, the thickness of a layer, or an area may be exaggerated for clarity, and therefore, the drawings are not necessarily limited to the scale.

[0030] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components and do not limit the number.

[0031] Furthermore, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" and "insulating layer" may be interchangeable with the terms "conductive film" and "insulating film."

[0032] In this specification and the like, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer), or a stack including a light-emitting layer.

[0033] In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) an image or the like on a display surface, and therefore the display panel is one aspect of an output device.

[0034] In addition, in this specification, a display panel having a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package) attached to its substrate, or a display panel having an IC mounted on its substrate using a COG (Chip On Glass) method or the like, may be referred to as a display panel module, a display module, or simply a display panel.

[0035] Embodiment 1 In this embodiment, a structural example of a display device according to one embodiment of the present invention and an example of a manufacturing method of the display device will be described.

[0036] One embodiment of the present invention is a display device including a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device). The light-emitting element has a pair of electrodes and an EL layer therebetween. The light-receiving element has a pair of electrodes and a photoelectric conversion layer therebetween. The light-emitting element is preferably an organic EL element (organic electroluminescent element). The light-receiving element is preferably an organic photodiode (organic photoelectric conversion element).

[0037] Furthermore, the display device preferably has two or more light-emitting elements that emit different colors. The light-emitting elements that emit different colors have EL layers containing different materials. For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), and blue (B) light, respectively.

[0038] One embodiment of the present invention functions as an imaging device because it can capture an image using a plurality of light-receiving elements. In this case, the light-emitting elements can be used as a light source for capturing an image. Another embodiment of the present invention functions as a display device because it can display an image using a plurality of light-emitting elements. Therefore, one embodiment of the present invention can be said to be a display device having an imaging function or an imaging device having a display function.

[0039] For example, in a display device according to one embodiment of the present invention, light-emitting elements are arranged in a matrix in the display portion, and light-receiving elements are also arranged in a matrix in the display portion. Therefore, the display portion has a function of displaying an image and a function as a light-receiving portion. Since images can be captured by the light-receiving elements provided in the display portion, the display device can function as an image sensor, a touch panel, or the like. That is, the display portion can capture an image or detect the approach or contact of an object. Furthermore, since the light-emitting elements provided in the display portion can be used as a light source for receiving light, there is no need to provide a light source separately from the display device. Therefore, a highly functional display device can be realized without increasing the number of electronic components.

[0040] In one embodiment of the present invention, when light emitted from a light-emitting element included in a display portion is reflected by an object, a light-receiving element can detect the reflected light; therefore, imaging or touch (including non-contact) detection can be performed even in a dark environment.

[0041] Furthermore, the display device of one embodiment of the present invention can capture an image of a fingerprint or palm print when a finger, palm, or the like is placed in contact with the display unit. Therefore, an electronic device equipped with the display device of one embodiment of the present invention can perform personal authentication using the captured image of a fingerprint, palm print, or the like. This eliminates the need for a separate imaging device for fingerprint authentication or palm print authentication, thereby reducing the number of components in the electronic device. Furthermore, since the light-receiving elements are arranged in a matrix on the display unit, an image of a fingerprint, palm print, or the like can be captured anywhere on the display unit, thereby realizing an electronic device with excellent convenience.

[0042] Another biometric authentication method is facial recognition, but the accuracy of this method can vary depending on the situation, such as when wearing a mask. On the other hand, authentication methods using fingerprints, palm prints, or veins have almost no difference in accuracy depending on the measurement environment, so they can be considered more accurate.

[0043] When capturing an image of a fingerprint or the like using a light receiving element, the light emitted from a light emitting element of a display unit can be used as a light source. In this case, it is preferable to cause the light emitting element to emit light instantaneously (for example, for 100 μs or more and 100 ms or less). By shortening the light emission time, degradation of the light emitting element can be suppressed even when the light is emitted at high brightness. Furthermore, by capturing an image using instantaneous, high-brightness light emission, an image with enhanced contrast (shadows) can be obtained, allowing for clearer capture of the uneven shape of a fingerprint or the like.

[0044] Here, when partially or entirely forming separate EL layers for light-emitting elements of different colors, it is known to form them by a vapor deposition method using a shadow mask such as a fine metal mask (FMM). However, with this method, deviations from the design occur in the shape and position of the island-shaped organic film due to various factors, such as the accuracy of the FMM, misalignment between the FMM and the substrate, deflection of the FMM, and the spread of the contours of the deposited film due to vapor scattering, making it difficult to achieve high definition and a high aperture ratio. For this reason, measures have been taken to artificially increase the definition (also known as pixel density) by applying special pixel arrangement methods such as a pentile arrangement.

[0045] In this specification, the term "island-like" refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from an adjacent light-emitting layer.

[0046] In a fabrication method using FMM, two adjacent island-shaped organic films can be formed so that they partially overlap in order to achieve even the slightest increase in resolution and aperture ratio. This allows for a significant reduction in the distance between the light-emitting regions compared to when the two island-shaped organic films are not overlapped. However, when two adjacent island-shaped organic films are formed so that they overlap, current leakage between the two adjacent light-emitting elements through the overlapping organic films can occur, resulting in unintended light emission. This can result in reduced brightness, reduced contrast, and reduced display quality. Furthermore, the leakage current can also degrade power efficiency and power consumption.

[0047] Furthermore, if a similar leakage current occurs between the light-emitting element and the light-receiving element, the leakage current may become a cause of noise when imaging using the light-receiving element, which may result in a decrease in imaging sensitivity (signal-to-noise ratio (S / N ratio)).

[0048] Therefore, in one embodiment of the present invention, a part or all of the organic layer located between a pair of electrodes of a light-emitting element and a part or all of the organic layer located between a pair of electrodes of a light-receiving element are processed by photolithography. At this time, it is preferable to process the organic layers between adjacent light-emitting elements and between adjacent light-emitting elements and light-receiving elements so that they are separated and do not contact each other. This makes it possible to separate current leakage paths through the organic layers between adjacent light-emitting elements and between adjacent light-emitting elements and light-receiving elements.

[0049] By suppressing the leakage current (also called side leakage) between the light-emitting element and the light-receiving element, it is possible to perform high-precision imaging with a high S / N ratio. Therefore, even when detecting weak light, it is possible to perform clear imaging. Therefore, it is possible to reduce the brightness of the light-emitting element used as a light source during imaging, thereby reducing power consumption.

[0050] Furthermore, by cutting off the current leakage path between two adjacent light-emitting elements, it is possible to simultaneously achieve increased brightness of the light-emitting elements, increased contrast, increased power efficiency, or reduced power consumption.

[0051] Furthermore, it is preferable to form an insulating layer to protect the side surfaces of the organic laminated film exposed by etching, thereby improving the reliability of the display device.

[0052] Between two adjacent light-emitting elements and between adjacent light-emitting elements and light-receiving elements, there are regions where the organic layers of the light-receiving elements and light-emitting elements are not provided. If a common electrode, or a common electrode and a common layer, is formed to cover these regions, a phenomenon in which the common electrode is separated by a step at the edge of the EL layer (also called step discontinuity) may occur, resulting in insulation of the common electrode on the EL layer. Therefore, it is preferable to use a configuration in which the local step located between two adjacent light-emitting elements and between adjacent light-emitting elements and light-receiving elements is filled with a resin layer that functions as a planarization film (also called LFP: Local Filling Planarization). This suppresses step discontinuity in the common layer or common electrode, thereby achieving a highly reliable display device.

[0053] If the resin layer is provided in contact with the EL layer, the EL layer may be dissolved by a solvent used in forming the resin layer. Therefore, it is preferable to provide an insulating layer between the EL layer and the resin layer to protect the side surfaces of the EL layer. That is, it is preferable to provide an inorganic insulating layer in contact with the side surfaces and top surface of the EL layer at the end of the EL layer, and then provide a resin layer on the inorganic insulating layer.

[0054] Furthermore, it is preferable to form a light-shielding layer containing a light-shielding material between adjacent light-emitting elements and light-receiving elements, for example, on the resin layer functioning as the above-mentioned planarization film or in a region overlapping the resin layer. By doing so, the light-shielding layer can block the path of light (also called stray light) diffusing from the light-emitting elements to the light-receiving elements. Since stray light is a cause of noise when capturing images with the light-receiving elements, a configuration that blocks stray light can increase the imaging sensitivity (signal-to-noise ratio (S / N ratio)).

[0055] In this way, by configuring the device to block stray light from entering the light-emitting element onto the adjacent light-receiving element, it is possible to minimize the effect of noise during imaging, thereby significantly increasing the imaging sensitivity.

[0056] In one embodiment of the present invention, a display device can be provided in which a white-emitting light-emitting element and a color filter are combined. In this case, light-emitting elements provided in pixels (subpixels) emitting light of different colors can have the same structure, and all layers of the light-emitting elements can be formed using the same material. Furthermore, by separating a part or all of the EL layer located between the light-emitting elements by photolithography, leakage current through the EL layer located between the light-emitting elements can be suppressed, thereby realizing a display device with high contrast. In particular, in an element having a tandem structure in which multiple light-emitting layers are stacked via a highly conductive intermediate layer, leakage current through the intermediate layer can be effectively prevented, thereby realizing a display device with high brightness, high definition, and high contrast.

[0057] Below, a more specific example of a structure and an example of a manufacturing method of a display device of one embodiment of the present invention will be described with reference to the drawings.

[0058] [Configuration Example] Fig. 1A shows a schematic top view of a display device 100. The display device 100 has a plurality of light-emitting elements 110R that exhibit red light, a plurality of light-emitting elements 110G that exhibit green light, a plurality of light-emitting elements 110B that exhibit blue light, and a plurality of light-receiving elements 110S. In Fig. 1A, in order to easily distinguish between the light-emitting elements or the light-receiving elements, the symbols R, G, B, and S are assigned within the light-emitting region of each light-emitting element or the light-receiving region of each light-receiving element.

[0059] The light-emitting elements 110R, 110G, 110B, and the light-receiving elements 110S are arranged in a matrix. Fig. 1A shows a configuration in which two types of elements are alternately arranged in one direction (row direction, column direction, or diagonal direction). The arrangement of the light-emitting elements and the light-receiving elements is not limited to this, and other arrangements such as a stripe arrangement, an S-stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may also be used. Alternatively, a pentile arrangement, a diamond arrangement, or the like may also be used.

[0060] As the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, it is preferable to use an EL element such as an organic light-emitting diode (OLED) or a quantum-dot light-emitting diode (QLED). Examples of light-emitting materials included in the EL elements include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF materials), and inorganic compounds (such as quantum dot materials).

[0061] The light receiving element 110S can be, for example, a pn-type or pin-type photodiode. The light receiving element 110S functions as a photoelectric conversion element that detects light incident on the light receiving element 110S and generates an electric charge. The amount of electric charge generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light receiving element 110S. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0062] 1A also shows a connection electrode 111C that is electrically connected to the common electrode 113. A potential (e.g., an anode potential or a cathode potential) is applied to the connection electrode 111C to be supplied to the common electrode 113. The connection electrode 111C is provided outside the display area where the light-emitting elements 110R and the like are arranged. Note that in FIG. 1A, the common electrode 113 is indicated by a dashed line.

[0063] The connection electrode 111C can be provided along the periphery of the display area. For example, it may be provided along one side of the periphery of the display area, or it may be provided over two or more sides of the periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped, L-shaped, U-shaped (square bracket-shaped), quadrangular, or the like.

[0064] 1B and 1C are schematic cross-sectional views corresponding to dashed dotted lines A1-A2 and B1-B2 in Fig. 1A, respectively. Fig. 1B shows a schematic cross-sectional view of light-emitting element 110B, light-receiving element 110S, and light-emitting element 110G, and Fig. 1C shows a schematic cross-sectional view of connection portion 140 where connection electrode 111C and common electrode 113 are electrically connected.

[0065] 1B shows cross sections of the light-emitting element 110B, the light-receiving element 110S, and the light-emitting element 110G. The light-emitting element 110R (not shown), the light-emitting element 110G, the light-emitting element 110B, and the light-receiving element 110S are each provided on a substrate 101. An adhesive layer 171 and a substrate 170 cover the light-emitting element 110R, the light-emitting element 110G, the light-emitting element 110B, and the light-receiving element 110S.

[0066] The light-emitting element 110R (not shown) has a pixel electrode 111R, an organic layer 112R (neither of which are shown), a common layer 114, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. The light-emitting element 110B has a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113. The light-receiving element 110S has a pixel electrode 111S, an organic layer 155, a common layer 114, and a common electrode 113. The common layer 114 and the common electrode 113 are provided in common to the light-emitting element 110R, the light-emitting element 110G, the light-emitting element 110B, and the light-receiving element 110S.

[0067] The organic layer 112R (not shown) of the light-emitting element 110R (not shown) contains a light-emitting organic compound that emits light having an intensity in at least the red wavelength range. The organic layer 112G of the light-emitting element 110G contains a light-emitting organic compound that emits light having an intensity in at least the green wavelength range. The organic layer 112B of the light-emitting element 110B contains a light-emitting organic compound that emits light having an intensity in at least the blue wavelength range. The organic layer 112R, the organic layer 112G, and the organic layer 112B can also be referred to as layers having a light-emitting layer.

[0068] The organic layer 155 of the light receiving element 110S has a photoelectric conversion material that is sensitive to the wavelength range of visible light or infrared light. The photoelectric conversion material of the organic layer 155 is preferably sensitive to one or more of the wavelength range of light emitted by the light emitting element 110R, the wavelength range of light emitted by the light emitting element 110G, and the wavelength range of light emitted by the light emitting element 110B. Alternatively, a photoelectric conversion material that is sensitive to infrared light with a longer wavelength than the wavelength range of light emitted by the light emitting element 110R may be used. The organic layer 155 may also be called an active layer or a photoelectric conversion layer.

[0069] Hereinafter, when describing matters common to the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, they may be referred to as the light-emitting element 110. Similarly, when describing matters common to the components distinguished by alphabets, such as the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B, or the organic layer 112R, the organic layer 112G, and the organic layer 112B, they may be described using symbols without the alphabets.

[0070] In each light-emitting element 110, the laminated film (organic layer 112 and common layer 114) located between the pixel electrode 111 and the common electrode 113 can be called an EL layer. In addition, in the light-receiving element 110S, the laminated film (organic layer 155 and common layer 114) located between the pixel electrode 111S and the common electrode 113 can be called a PD layer.

[0071] The organic layer 112 and the common layer 114 can each independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. The organic layer 112 also includes a light-emitting layer. For example, the organic layer 112 can have a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer from the pixel electrode 111 side, and the common layer 114 can include an electron injection layer. Alternatively, for example, the common layer 114 can be configured to include no organic compound and to use a film containing only an inorganic compound or inorganic substance.

[0072] The pixel electrode 111R (not shown), pixel electrode 111G, and pixel electrode 111B are provided in the light-emitting element 110R (not shown), light-emitting element 110G, and light-emitting element 110B, respectively. The common layer 114 and common electrode 113 are provided as a continuous layer common to each light-emitting element 110 and light-receiving element 110S. A conductive film transmissive to visible light is used for either the pixel electrode 111 or the common electrode 113, and a conductive film reflective to visible light is used for the other. If each pixel electrode 111 is transmissive and the common electrode 113 is reflective, a bottom-emission display device can be obtained. Conversely, if each pixel electrode 111 is reflective and the common electrode 113 is transmissive, a top-emission display device can be obtained. Furthermore, if both the pixel electrodes 111 and the common electrode 113 are transmissive, a dual-emission display device can be obtained.

[0073] A protective layer 121 is provided on the common electrode 113 to cover the light-emitting elements 110 and the light-receiving elements 110S. The protective layer 121 has a function of preventing impurities such as water from diffusing from above (the substrate 170 side) to the light-emitting elements 110 and the light-receiving elements 110S.

[0074] The edge of the pixel electrode 111 preferably has a tapered shape. When the edge of the pixel electrode 111 has a tapered shape, the side of the organic layer 112 or the organic layer 155 provided along the side of the pixel electrode 111 also has a tapered shape. By tapering the side of the pixel electrode 111, the coverage of the organic layer 112 or the organic layer 155 provided along the side of the pixel electrode 111 can be improved. Furthermore, by tapering the side of the pixel electrode 111, foreign matter (also referred to as dust or particles, for example) that may be generated during the manufacturing process can be easily removed by a process such as cleaning, which is preferable.

[0075] In this specification and the like, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined with respect to the substrate surface (or the surface on which the structure is to be formed). For example, it refers to a shape having a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface (or the surface on which the structure is to be formed) is less than 90 degrees. Note that the side surface of the structure and the substrate surface (or the surface on which the structure is to be formed) do not necessarily need to be completely flat, and may be approximately planar with a slight curvature or approximately planar with a slight unevenness.

[0076] The organic layer 112 and the organic layer 155 are processed into an island shape by photolithography. Therefore, the angle between the top surface and the side surface of the organic layer 112 and the organic layer 155 at their edges is close to 90 degrees. On the other hand, organic films formed using FMM or the like tend to become gradually thinner toward the edges. For example, the top surface is formed in a sloped shape over a range of 1 μm to 10 μm, which may make it difficult to distinguish between the top surface and the side surface. The organic layer 112 and the organic layer 155 are preferably processed to have regions where the angle (taper angle) between the side surface and the bottom surface (substrate surface) is 10 degrees to 120 degrees, preferably 20 degrees to 100 degrees, more preferably 30 degrees to 95 degrees, and even more preferably 45 degrees to 90 degrees.

[0077] As shown in FIG. 1B, an insulating layer 125, a resin layer 126, and a light-shielding layer 123 are provided between the light-emitting element 110 and the light-receiving element 110S adjacent to each other.

[0078] Between the light emitting element 110 and the light receiving element 110S adjacent to each other, the side surface of the organic layer 112 and the side surface of the organic layer 155 are provided facing each other with the resin layer 126 interposed therebetween.

[0079] The resin layer 126 functions as a planarizing film for reducing steps at the ends of the organic layer 112 or the organic layer 155. By providing the resin layer 126, it is possible to prevent a phenomenon (also called step disconnection) in which the common electrode 113 is divided by steps at the ends of the organic layer 112 or the organic layer 155, and to prevent the common electrode 113 on the organic layer 112 or the organic layer 155 from being insulated. The resin layer 126 can also be called an LFP.

[0080] An insulating layer containing an organic material can be suitably used as the resin layer 126. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, etc. can be used as the resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the resin layer 126.

[0081] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0082] The resin layer 126 may contain a material that absorbs visible light. For example, the resin layer 126 itself may be made of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light. For example, the resin layer 126 may be a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0083] A common layer 114, a common electrode 113, and a protective layer 121 are provided on the resin layer 126. The common layer 114, the common electrode 113, and the protective layer 121 each have a portion overlapping with the pixel electrode 111 via the organic layer 112, a portion overlapping with the pixel electrode 111S via the organic layer 155, and a portion overlapping with the resin layer 126.

[0084] The upper surface (on the substrate 170 side) of the resin layer 126 has a substantially flat shape. A light-shielding layer 123 is provided on the upper surface via a common layer 114, a common electrode 113, and a protective layer 121. The light-shielding layer 123 has a function of preventing light emitted by the light-emitting element 110 from entering the adjacent light-receiving element 110S without escaping outside the display device 100 (preventing stray light).

[0085] An adhesive layer 171 is provided to cover the protective layer 121 and the light-shielding layer 123, and a substrate 170 is provided on the adhesive layer 171. A light-shielding layer 172 is provided on the side of the substrate 170 facing the substrate 101 so as to have an area overlapping with the resin layer 126 in a plan view.

[0086] The light-shielding layer 172 is provided between adjacent light-emitting elements 110 and between adjacent light-emitting elements 110 and light-receiving elements 110S in a plan view.

[0087] The light-shielding layer 172, which is provided so as to surround the light-receiving element 110S in a plan view, has the function of narrowing down the light incident on the light-receiving element 110S, thereby making it possible to capture a clear image.

[0088] The light-shielding layer 172 also functions to conceal structures such as wiring and electrodes arranged in the non-light-emitting and non-light-receiving regions so that they are not visible to the user, thereby preventing a decrease in contrast due to reflected light in these regions and improving display quality.

[0089] The light-shielding layer 172 may be arranged only between the adjacent light-emitting elements 110 and the light-receiving element 110S in plan view, rather than between the adjacent light-emitting elements 110. This makes it possible to realize a display device that has small changes in brightness and chromaticity (viewing angle dependency) when viewed from an oblique direction and is capable of capturing clear images.

[0090] On the surface of the light-shielding layer 172 facing the substrate 101, a light-shielding layer 123 having a stray light prevention function is provided, similar to that on the resin layer 126 described above.

[0091] The light-shielding layer 123 provided on the surface of the light-shielding layer 172 facing the substrate 101 can be made of the same material as the light-shielding layer 123 on the protective layer 121. In addition, the light-shielding layer 123 provided on the surface of the light-shielding layer 172 facing the substrate 101 may be made of the same material as the light-shielding layer 172.

[0092] Note that the light-shielding layer 123 provided on the surface of the light-shielding layer 172 facing the substrate 101 and the light-shielding layer 123 on the protective layer 121 are preferably provided alternately (in a comb-like pattern) so as to have a gap between them in a plan view. In this manner, in one embodiment of the present invention, by providing the light-shielding layer 123 in a comb-like pattern between the adjacent light-emitting element 110 and light-receiving element 110S, a display device with high imaging sensitivity and reduced influence of noise during imaging can be realized compared to a display device without the light-shielding layer 123.

[0093] 1B, all the light-shielding layers 123 are shown to have the same shape and size, but this is not limited thereto. In one embodiment of the present invention, the plurality of light-shielding layers 123 included in the display device 100 may have different shapes and sizes.

[0094] 1B , the light-shielding layer 123 may be provided not only between adjacent light-emitting elements 110 and light-receiving elements 110S, but also between adjacent light-emitting elements 110. This prevents light of different colors emitted from adjacent light-emitting elements 110 from mixing with each other, and prevents the mixed light from being emitted to the outside of the display device 100 as light emitted from the light-emitting elements 110. This makes it possible to suppress a decrease in the color purity of the light emitted from the light-emitting elements 110 and a resulting decrease in the display quality of the display device 100.

[0095] The light-shielding layer 123 preferably includes a material that absorbs at least a portion of visible light. For example, it preferably includes a material that absorbs at least one of the lights emitted by the light-emitting elements 110R, 110G, and 110B. For example, the light-shielding layer 123 itself may be made of a material that absorbs visible light (e.g., a colored organic material or inorganic material), or the light-shielding layer 123 may include a pigment that absorbs visible light. For example, the light-shielding layer 123 may include a resin that includes carbon black as a pigment and functions as a black matrix, or a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light.

[0096] The light-shielding layer 172 can be formed using the same material as the light-shielding layer 123 (described above).

[0097] The insulating layer 125 is provided in contact with the side surface of the organic layer 112 or the organic layer 155. The insulating layer 125 is also provided to cover the upper end portion of the organic layer 112 or the organic layer 155. A portion of the insulating layer 125 is provided in contact with the upper surface of the substrate 101.

[0098] A portion of the insulating layer 125 is located between the organic layer 112 or the organic layer 155 and the resin layer 126, and functions as a protective layer to prevent the resin layer 126 from contacting the organic layer 112 or the organic layer 155. If the organic layer 112 or the organic layer 155 comes into contact with the resin layer 126, the organic layer 112 or the organic layer 155 may be dissolved by an organic solvent used in forming the resin layer 126. Therefore, by providing such an insulating layer 125, it is possible to protect the side surfaces of the organic layer 112 or the organic layer 155. Furthermore, the insulating layer 125 can prevent the side surfaces of the organic layer 112 or the organic layer 155 from being exposed to the atmosphere. This allows for the manufacture of a highly reliable light-emitting element 110 and a light-receiving element 110S.

[0099] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films. In particular, by using an inorganic insulating film such as an aluminum oxide film, a metal oxide film such as a hafnium oxide film, or a silicon oxide film formed by an atomic layer deposition (ALD) method as the insulating layer 125, it is possible to form an insulating layer 125 that has few pinholes and is excellent in protecting the EL layer.

[0100] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0101] The insulating layer 125 can be formed by a sputtering method, a chemical vapor deposition (CVD) method, a pulsed laser deposition (PLD) method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method because of its good coverage.

[0102] Resin layer 126 is provided to cover the upper end and side surfaces of organic layer 112 or organic layer 155. Layer 128 and a part of insulating layer 125 are laminated in this order between the upper end of organic layer 112 or organic layer 155 and resin layer 126. Layer 128 is provided in contact with the upper end of organic layer 112 or organic layer 155.

[0103] The layer 128 is a remaining portion of a protective layer (also referred to as a mask layer or a sacrificial layer) for protecting the organic layer 112 or the organic layer 155 during etching of the organic layer 112 or the organic layer 155. The layer 128 can be made of any of the materials that can be used for the insulating layer 125. In particular, using the same material for the layer 128 and the insulating layer 125 is preferable because it allows the use of common processing equipment and the like.

[0104] In particular, inorganic insulating films such as metal oxide films, such as aluminum oxide films and hafnium oxide films, or silicon oxide films formed by the ALD method have few pinholes, so by using these films as the material for the layer 128, the insulating layer 125 can be formed in a later step with an excellent function of protecting the EL layer.

[0105] In particular, it is preferable to use an insulating film that can be processed by wet etching for the layer 128. Because the layer 128 is a film that contacts the upper end of the organic layer 112 or the organic layer 155, using wet etching, which causes less damage to the surface on which the layer 128 is formed, can improve the reliability of the light-emitting element 110 and the light-receiving element 110S compared to using dry etching.

[0106] The protective layer 121 is provided to cover the common electrode 113. The protective layer 121 preferably has a single-layer structure or a stacked-layer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide.

[0107] 1C shows a connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected. In the connection portion 140, an opening is provided above the connection electrode 111C in the layer 128, the insulating layer 125, and the resin layer 126. The connection electrode 111C and the common electrode 113 are electrically connected through the opening.

[0108] 1C shows a connection portion 140 electrically connecting the connection electrode 111C and the common electrode 113, but the common electrode 113 may be provided on the connection electrode 111C via a common layer 114. In particular, when a carrier injection layer is used for the common layer 114, a material with sufficiently low electrical resistivity can be used for the common layer 114, and the common layer 114 can be formed thin. Therefore, there are many cases where there is no problem even if the common layer 114 is located at the connection portion 140. In this configuration, the common electrode 113 and the common layer 114 can be formed using the same shielding mask, thereby reducing manufacturing costs.

[0109] 2A and 2B are diagrams illustrating the effect of the light-blocking layer 123 provided in the display device 100 of one embodiment of the present invention. Note that Fig. 2A shows a cross-sectional view of a display device without the light-blocking layer 123, and Fig. 2B shows a cross-sectional view of a display device with the light-blocking layer 123.

[0110] FIG. 2A is a simplified diagram showing the path of light emitted by the light emitting element 110 when the display device does not have the light blocking layer 123.

[0111] As shown in FIG. 2A, of the light emitted by the light-emitting element 110B and the light-emitting element 110G (the same applies to the light-emitting element 110R, although not shown) toward the substrate 170, a portion of the light (light 180) that diffuses toward the light-receiving element 110S adjacent to the light-emitting element 110 travels straight toward the light-shielding layer 172 provided between the light-emitting element 110 and the light-receiving element 110S.

[0112] As described above, the light-shielding layer 172 can be formed from a material that absorbs visible light or a material that contains a pigment that absorbs visible light. Therefore, part of the light 180 that enters the light-shielding layer 172 is absorbed by the light-shielding layer 172, thereby weakening the intensity. However, the remaining light that cannot be absorbed by the light-shielding layer 172 is reflected by the light-shielding layer 172 and changes its direction of travel toward the substrate 101.

[0113] A portion of the light reflected by the light-shielding layer 172 is incident on the adjacent light-receiving element 110S. Another portion of the reflected light is reflected by the protective layer 121 facing the light-shielding layer 172, and changes course toward the substrate 170. This reflected light is incident on the light-shielding layer 172 again, where a portion of it is absorbed and the remainder is reflected. Then, a portion of the reflected light is incident on the adjacent light-receiving element 110S.

[0114] As for the light that did not enter the light receiving element 110S, the above behavior is repeated, and eventually part of the light enters the light receiving element 110S. Figure 2A shows, as an example, the path of light emitted by the light emitting element 110 that is reflected once by the light blocking layer 172 and enters the adjacent light receiving element 110S, and the path of light that is reflected a total of three times by the light blocking layer 172 and the protective layer 121 and enters the adjacent light receiving element 110S.

[0115] As described above, if the display device does not have the light-shielding layer 123, there is a possibility that the light receiving element 110S may receive part of the light emitted by the adjacent light emitting element 110 as stray light. This stray light can become a noise factor when the display device captures an image using the light receiving element 110S, and the image capturing sensitivity (S / N ratio) of the display device decreases when the light receiving element 110S receives the stray light. Therefore, in order to increase the image capturing sensitivity of the display device, it is preferable to remove noise factors such as stray light as much as possible.

[0116] FIG. 2B is a simplified diagram showing the path of light emitted by the light emitting element 110 when the display device has a light blocking layer 123.

[0117] 2A , the light 180 that was incident on the light receiving element 110S after three reflections is incident on the side of the light blocking layer 123 closest to the light emitting element 110, one of the two light blocking layers 123 provided on the light blocking layer 172, in FIG. 2B . As described above, the light blocking layer 123 can be formed from a material that absorbs visible light or a material containing a pigment that absorbs visible light. Therefore, a portion of the light incident on the light blocking layer 123 is absorbed by the light blocking layer 123. The remaining light that cannot be absorbed by the light blocking layer 123 is reflected by the light blocking layer 123 and changes its traveling direction toward the substrate 170. Because the traveling path of this light is not blocked by the light blocking layer 172, the light ultimately passes through the substrate 170 and is emitted to the outside (not shown).

[0118] 2A , part of the light 180 that was incident on the light receiving element 110S after a single reflection is reflected by the bottom surface of the light blocking layer 123 closer to the light emitting element 110, of the two light blocking layers 123 provided on the light blocking layer 172, in FIG. 2B . The reflected light then enters the side surface of the light blocking layer 123 provided on the protective layer 121. Part of the incident light is absorbed by the light blocking layer 123, reducing its intensity. The remaining light is reflected by the light blocking layer 123 toward the substrate 101.

[0119] Note that in one embodiment of the present invention, the display device 100 includes two light-shielding layers 123 provided on a surface of the light-shielding layer 172 facing the substrate 101, and the two light-shielding layers 123 are arranged in a comb-like shape so as to have a gap in a plan view between one light-shielding layer 123 provided on the protective layer 121. Therefore, even if light (not shown) penetrates between the light-shielding layer 123 provided on the surface of the light-shielding layer 172 facing the substrate 101 and the light-shielding layer 123 provided on the protective layer 121, the path of the light is blocked by the other light-shielding layer 123 provided on the surface of the light-shielding layer 172 facing the substrate 101, and the light can be prevented from entering the light-receiving element 110S.

[0120] 1B and 2B illustrate a configuration in which two light-shielding layers 123 are provided on the surface of the light-shielding layer 172 facing the substrate 101 and one light-shielding layer 123 is provided on the protective layer 121, but this is not limiting. In one embodiment of the present invention, the number of light-shielding layers 123 provided on the surface of the light-shielding layer 172 facing the substrate 101 may be one or three or more. Furthermore, the number of light-shielding layers 123 on the protective layer 121 may be two or more.

[0121] As described above, the display device 100 of one embodiment of the present invention includes the comb-shaped light-shielding layer 123 between the light-emitting element 110 and the light-receiving element 110S adjacent to each other, which can prevent part of the light emitted by the light-emitting element 110 from entering the adjacent light-receiving element 110S as stray light. This can reduce noise during imaging. Furthermore, a display device that can perform imaging with a high S / N ratio and high sensitivity can be realized.

[0122] [Modification 1] A modification of the above-described configuration example will be described below. Note that the same parts as those described above will be referred to, and the description may be omitted.

[0123] FIG. 3A illustrates a configuration example in which one of two light-shielding layers 123 provided on a surface of the light-shielding layer 172 facing the substrate 101 in the display device 100 illustrated in FIG. 1B is removed, the light-shielding layer 123 being located closer to the light-receiving element 110S. In FIG. 3A , the two light-shielding layers 123 are generally closer to the light-emitting element 110 than to the light-receiving element 110S, but this is not limited thereto. In one embodiment of the present invention, the two light-shielding layers 123 may be located closer to the light-receiving element 110S. Alternatively, the two light-shielding layers 123 may be located exactly midway between the adjacent light-emitting element 110 and the light-receiving element 110S. This configuration is preferable from the viewpoint of ease of fabrication of the display device, because alignment precision is not required when bonding a structure provided on the substrate 101 side to a structure provided on the substrate 170 side in a manufacturing process of the display device (described later).

[0124] 3B shows a configuration example in which one of the two light-shielding layers 123 provided on the surface of the light-shielding layer 172 facing the substrate 101 of the display device 100 shown in FIG. 1B is removed, the one located closer to the light-emitting element 110. In FIG. 3B, the two light-shielding layers 123 are generally closer to the light-receiving element 110S than to the light-emitting element 110, but this is not limited thereto. In one embodiment of the present invention, the two light-shielding layers 123 may be located closer to the light-emitting element 110. Alternatively, the two light-shielding layers 123 may be located exactly midway between the adjacent light-emitting element 110 and light-receiving element 110S. This configuration can provide the same advantages as those of FIG. 3A described above.

[0125] 3C shows a configuration example in which, similar to FIG. 3A , one light-shielding layer 123 is provided on the surface of the light-shielding layer 172 facing the substrate 101 and on the protective layer 121. In the configuration example shown in FIG. 3C , the size of the two light-shielding layers 123 is larger than in the configuration example shown in FIG. 3A . Also, this configuration example differs from the configuration example shown in FIG. 3A in that the midpoint between the two light-shielding layers 123 is located exactly midpoint between the adjacent light-emitting element 110 and light-receiving element 110S. Increasing the size of the light-shielding layer 123 advantageously narrows the path of light diffusing from the light-emitting element 110 toward the adjacent light-receiving element 110S.

[0126] Fig. 4A shows a configuration example in which the position of the light-shielding layer 123 on the surface of the light-shielding layer 172 facing the substrate 101 and the position of the light-shielding layer 123 on the protective layer 121 are different from those shown in Fig. 3C. Specifically, in the configuration example shown in Fig. 3C, the light-shielding layer 123 on the surface of the light-shielding layer 172 facing the substrate 101 is disposed near the light-emitting element 110, and the light-shielding layer 123 on the protective layer 121 is disposed near the light-receiving element 110S. However, in the configuration example shown in Fig. 4A, the light-shielding layer 123 on the surface of the light-shielding layer 172 facing the substrate 101 is disposed near the light-receiving element 110S, and the light-shielding layer 123 on the protective layer 121 is disposed near the light-emitting element 110.

[0127] 4B shows a configuration example in which one light-shielding layer 123 is provided on the surface of the light-shielding layer 172 facing the substrate 101 and one on the protective layer 121, and the two light-shielding layers 123 are in contact with each other. This configuration is preferable because the two light-shielding layers 123 block the path of light emitted by the light-emitting element 110 between the substrate 170 and the protective layer 121, which is used to reach the adjacent light-receiving element 110S. Furthermore, adjusting the thickness of the two light-shielding layers 123 makes it possible to control the distance (also referred to as the gap) between the substrate 101 and the substrate 170, which has the secondary effect of reducing variation in the gap.

[0128] FIG. 4C shows a configuration example in which one light-shielding layer 123 is provided on the surface of the light-shielding layer 172 facing the substrate 101, and two light-shielding layers 123 are provided on the protective layer 121.

[0129] FIG. 5A shows an example in which the display device 100 shown in FIG. 1B has a lens 173 on the light-emitting element 110. In FIG.

[0130] The lens 173 is provided on and in contact with the protective layer 121 and has an area that overlaps with the pixel electrode 111 of the light emitting element 110 with the protective layer 121 interposed therebetween.

[0131] It is preferable to use a material for the lens 173 that has a higher refractive index for at least visible light than that of a layer (here, the adhesive layer 171) that is in contact with the lens surface (convex surface) of the lens 173. Furthermore, when imaging is performed using infrared light (an example of the configuration of the light-emitting element in this case will be described later in Embodiment 3), it is preferable to use a material for the lens 173 that has a higher refractive index for infrared light than that of a layer that is in contact with the lens surface.

[0132] As the lens 173, it is preferable to use a convex lens having a convex shape on the side facing the substrate 170. By providing the lens 173 on the light-emitting element 110, the light extraction efficiency can be improved, and a display device with higher brightness can be realized. Furthermore, since the light extraction efficiency is improved, a desired brightness can be obtained with lower power, and a display device with low power consumption can be realized.

[0133] FIG. 5B shows an example in which the display device 100 shown in FIG. 1B has a lens 173 above the light receiving element 110S.

[0134] The lens 173 is provided on and in contact with the protective layer 121, and has an area that overlaps with the pixel electrode 111S of the light receiving element 110S with the protective layer 121 interposed therebetween.

[0135] By providing the lens 173 on the light receiving element 110S, it is possible to increase the amount of light incident on the light receiving element 110S. This allows for more sensitive imaging than without the lens 173, making it possible to reduce the brightness of the illumination used for imaging and reduce power consumption during imaging.

[0136] FIG. 5C shows an example in which the display device 100 shown in FIG. 1B has lenses 173 above both the light-emitting element 110 and the light-receiving element 110S.

[0137] By using such a structure for the display device of one embodiment of the present invention, it is possible to obtain both advantages of the structure example shown in FIG. 5A and the structure example shown in FIG. 5B.

[0138] Fig. 6A shows an example in which lens 173 is arranged on the substrate 170 side in the configuration shown in Fig. 5A. In Fig. 6A, this lens is designated as lens 175. It is preferable to use a convex lens having a convex shape on the side facing substrate 101 as lens 175. This configuration is also preferable because it is expected to improve the light extraction efficiency of light-emitting element 110, similar to Fig. 5A.

[0139] Fig. 6B shows an example in which lens 173 is arranged on the substrate 170 side in the configuration shown in Fig. 5B. In Fig. 6B, this lens is lens 175. It is preferable to use a convex lens having a convex shape on the side facing substrate 101 as lens 175. This configuration is also preferable because, similar to Fig. 5B, an increase in the amount of light incident on light receiving element 110S can be expected.

[0140] FIG. 6C is an example in which both the configurations of FIG. 6A and FIG. 6B are incorporated.

[0141] By using such a structure for the display device of one embodiment of the present invention, both the advantages of the structure example shown in FIG. 6A and the advantages of the structure example shown in FIG. 6B can be obtained.

[0142] Fig. 7A shows an example in which the shape of lens 173 is different from that of the configuration shown in Fig. 5A. Specifically, in the configuration shown in Fig. 5A, a convex lens with a cross section that is partially semispherical is used as lens 173, whereas in the configuration shown in Fig. 7A, a lens with a cross section that is substantially trapezoidal is used.

[0143] When a convex lens with a substantially hemispherical cross section is used as the lens 173, the width and thickness of the lens are nearly proportional, which may make it impossible to arrange the lens 173 for some pixel sizes. In contrast, when a lens with a substantially trapezoidal cross section is used as the lens 173, the thickness can be adjusted regardless of the width of the lens, which is preferable because the lens 173 can be arranged for pixels of minute size. Furthermore, the distance between the substrate 101 and the substrate 170 can be reduced, which allows the entire display device to be made thinner.

[0144] FIG. 7B shows an example in which a lens having a substantially trapezoidal cross section is used as the lens 173 in the configuration shown in FIG. 5B.

[0145] FIG. 7C shows an example in which a lens having a substantially trapezoidal cross section is used as the lens 173 in the configuration shown in FIG. 5C.

[0146] FIG. 8A shows an example in which a lens having a substantially trapezoidal cross section is used as the lens 175 in the configuration shown in FIG. 6A.

[0147] FIG. 8B shows an example in which a lens having a substantially trapezoidal cross section is used as the lens 175 in the configuration shown in FIG. 6B.

[0148] FIG. 8C shows an example in which a lens having a substantially trapezoidal cross section is used as the lens 175 in the configuration shown in FIG. 6C.

[0149] 9A shows an example in which the configuration shown in FIG. 5C and the configuration shown in FIG. 6C are combined. This configuration can improve the light extraction efficiency from the light-emitting element 110 compared to when only the configuration shown in FIG. 5C or only the configuration shown in FIG. 6C is applied. In addition, the amount of light incident on the light-receiving element 110S can be increased.

[0150] 9B shows an example in which both the configuration shown in FIG. 5C and the configuration shown in FIG. 8C are combined. This configuration can improve the light extraction efficiency from the light-emitting element 110 compared to when only the configuration shown in FIG. 5C or only the configuration shown in FIG. 8C is applied. It can also increase the amount of light incident on the light-receiving element 110S. Furthermore, since the distance between the substrate 101 and the substrate 170 can be reduced compared to the configuration shown in FIG. 9A, the overall display device can be made thinner.

[0151] 10A shows an example in which both the configuration shown in FIG. 6C and the configuration shown in FIG. 7C are combined. This configuration can improve the light extraction efficiency from the light-emitting element 110 compared to when only the configuration shown in FIG. 6C or only the configuration shown in FIG. 7C is applied. It can also increase the amount of light incident on the light-receiving element 110S. Furthermore, as with FIG. 9B, the distance between the substrate 101 and the substrate 170 can be reduced compared to the configuration shown in FIG. 9A, thereby enabling the entire display device to be made thinner.

[0152] 10B shows an example in which both the configuration shown in FIG. 7C and the configuration shown in FIG. 8C are combined. This configuration can improve the light extraction efficiency from the light-emitting element 110 compared to when only the configuration shown in FIG. 7C or only the configuration shown in FIG. 8C is applied. It can also increase the amount of light incident on the light-receiving element 110S. Furthermore, since the distance between the substrate 101 and the substrate 170 can be reduced compared to the configurations shown in FIGS. 9B and 10A, the overall display device can be made thinner.

[0153] [Modification 2] An example in which a white light emitting element is used will be described below.

[0154] FIG. 11A shows an example in which a light-emitting element 110W that emits white light is applied in place of the light-emitting element 110R (not shown), the light-emitting element 110G, and the light-emitting element 110B in the configuration shown in FIG. 1B.

[0155] The light-emitting element 110W has an organic layer 112W and a common layer 114 between a pixel electrode 111W and a common electrode 113. The organic layer 112W has a light-emitting layer that emits white light. For example, the organic layer 112W may have a configuration including two types of light-emitting materials that are complementary colors.

[0156] A colored layer 174R (not shown), a colored layer 174G, or a colored layer 174B is provided in an area overlapping the light emitting element 110W on the substrate 170 (the side facing the substrate 101). The colored layer 174R has a function of transmitting red light and absorbing light of other colors. The colored layer 174G has a function of transmitting green light and absorbing light of other colors. The colored layer 174B has a function of transmitting blue light and absorbing light of other colors. This allows for full-color display.

[0157] Here, the organic layer 112W is processed by photolithography to separate adjacent light-emitting elements 110W, thereby suppressing color mixing caused by leakage current flowing between the light-emitting elements 110W via the organic layer 112W.

[0158] In plan view, it is preferable to provide a light-shielding layer 172 between adjacent colored layers 174. This prevents light from the light-emitting element 110W from passing through the gaps between the colored layers 174, thereby suppressing a decrease in contrast. Note that a configuration may be adopted in which two or more colored layers 174 are stacked without providing a light-shielding layer 172, thereby also fulfilling the function of the light-shielding layer 172.

[0159] 11A, it is preferable to configure the substrate 170 (the side facing the substrate 101) so that the colored layer 174 is not provided in the region overlapping with the light receiving element 110S. This allows a larger amount of light to be incident on the light receiving element 110S than when the colored layer 174 is provided. Note that, if it is desired to select the wavelength of light to be detected by the light receiving element 110S, a colored layer that transmits light of a predetermined wavelength can be disposed on the path of light incident on the light receiving element 110S. In this case, a colored layer that transmits infrared light and blocks visible light may also be used.

[0160] 11B shows an example in which the colored layer 174 is disposed on the protective layer 121 in the configuration shown in Fig. 11A. This configuration makes it possible to reduce the distance between the light emitting element 110W and the colored layer 174, thereby suppressing color mixing caused by light from the light emitting element 110W unintentionally entering the adjacent colored layer 174, and realizing a display device with high color reproducibility.

[0161] It should be noted that the various configurations of the light-shielding layer 123 and the various configurations of the lenses 173 and 175 shown in the above-described modified example 1 can be applied to the configuration example using the white light-emitting element shown here.

[0162] [Modification 3] Hereinafter, an example of a display device in which the shapes of the light emitting element 110 and the light receiving element 110S are different from those shown in FIGS. 1 to 11 will be described.

[0163] 1 to 11 in that the side surfaces of the pixel electrode 111 are substantially perpendicular to the substrate surface and do not have a tapered shape. Also, the configuration shown in Fig. 1 to 11 differs in that the ends of the organic layers 112 and 155 do not cover the ends of the pixel electrode 111. Also, the configuration shown in Fig. 1 to 11 differs in that the layer 128, the insulating layer 125, and the resin layer 126 are not provided between the light-emitting element 110 and the light-receiving element 110S adjacent to each other, and instead, an insulating layer 131 is provided.

[0164] 12A , adjacent light-emitting elements 110 and light-receiving elements 110S, as well as adjacent light-emitting elements 110 (not shown), are isolated by an insulating layer 131. The upper surface of the insulating layer 131 has a substantially flat region, and its edges cover the upper edges and side surfaces of the pixel electrodes 111. An organic layer 112 or an organic layer 155 is provided so as to cover a portion of the upper surface of the pixel electrodes 111 and the edges of the insulating layer 131, and a common layer 114, a common electrode 113, and a protective layer 121 are stacked in this order so as to cover the upper and side surfaces of the organic layer 112 or the organic layer 155 and a portion (substantially flat region) of the upper surface of the insulating layer 131.

[0165] A portion of the region of protective layer 121 that overlaps with insulating layer 131 has a substantially flat upper surface, and light-shielding layer 123 is provided on this region. In addition, adhesive layer 171 is provided so as to cover protective layer 121, and substrate 170 is provided on adhesive layer 171. On the side of substrate 170 facing substrate 101, light-shielding layer 172 is provided in the region that overlaps with insulating layer 131, and two light-shielding layers 123 are provided on the surface of light-shielding layer 172 facing substrate 101 so as to have a gap between it and light-shielding layer 123 on protective layer 121 in plan view.

[0166] 1 to 11, the light-emitting surface of the light-emitting element 110 is larger in size. That is, the surface of the portion where the pixel electrode 111, the organic layer 112, the common layer 114, and the common electrode 113 are stacked is larger in size. The same can be said for the size of the light-receiving surface of the light-receiving element 110S.

[0167] In this case, the organic layer 112 and the organic layer 155 can be formed in larger sizes than those in the configurations shown in Figures 1 to 11, so that the processing precision required during fabrication is lower than when fabricating the configurations shown in Figures 1 to 11. Therefore, in the configuration shown in Figure 12A, the light-emitting element 110 or the light-receiving element 110S can also be formed by a vapor deposition method using a shadow mask such as an FMM. As such, the configuration shown in Figure 12A is preferable because it provides more options for the method of forming the light-emitting element 110 or the light-receiving element 110S than the configurations shown in Figures 1 to 11.

[0168] FIG. 12B shows an example in which the configuration shown in FIG. 12A includes a light emitting element 110W that emits white light, and the colored layer 174 shown in FIG. 11A is used.

[0169] It should be noted that the various configurations of the light-shielding layer 123 shown in the above-mentioned variant example 1, the various configurations of the lenses 173 and 175, and the various configurations of the colored layer 174 shown in the above-mentioned variant example 2 can be applied to the configuration examples shown in Figures 12A and 12B.

[0170] [Manufacturing Method Example] An example of a manufacturing method of a display device according to one embodiment of the present invention will be described below. Here, an example of a manufacturing method of the display device 100 shown in FIG.

[0171] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting display devices can be formed using a sputtering method, a CVD method, a vacuum deposition method, a PLD method, an ALD method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0172] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, knife coating, etc.

[0173] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting elements. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, charge generation layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0174] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0175] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0176] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light (wavelength 248 nm), and ArF laser light (wavelength 193 nm). Exposure can also be performed using immersion exposure technology. Extreme ultraviolet (EUV) light with a wavelength of 10 nm to 100 nm or X-rays can also be used as the light used for exposure. An electron beam can also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0177] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0178] First, the pixel electrode 111 is formed on the substrate 101 .

[0179] A substrate having heat resistance sufficient to withstand at least a subsequent heat treatment can be used as the substrate 101. When an insulating substrate is used as the substrate 101, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. Also, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.

[0180] In particular, it is preferable to use a substrate in which a semiconductor circuit including a semiconductor element such as a transistor is formed on the semiconductor substrate or insulating substrate as the substrate 101. The semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be constituted.

[0181] Furthermore, when a conductive film reflective to visible light is used as the pixel electrode 111, it is preferable to use a material (such as silver or aluminum) having as high a reflectivity as possible over the entire wavelength range of visible light. This not only increases the light extraction efficiency from the light-emitting element 110 but also improves color reproducibility. Furthermore, a light-transmitting conductive film may be stacked on the reflective conductive film, and the thickness of the light-transmitting conductive film may be varied for each light-emitting element.

[0182] The pixel electrodes 111 can be formed by, for example, sputtering or vacuum deposition.

[0183] Subsequently, the organic layer 112 or the organic layer 155 is formed on the pixel electrode 111 .

[0184] The organic layer 112 has at least a film containing a light-emitting compound. Alternatively, the organic layer 112 may have a laminated structure of one or more films functioning as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, or a hole injection layer. The organic layer 112 can be formed by, for example, a vapor deposition method, a sputtering method, an inkjet method, or the like. However, the organic layer 112 is not limited to these methods, and any of the above-described film formation methods can be used as appropriate. The organic layer 155 has a film containing a photoelectric conversion material sensitive to the wavelength region of visible light or infrared light. The organic layer 155 can also be formed by a method similar to that of the organic layer 112.

[0185] Next, layers 128, insulating layers 125, resin layers 126, etc., which are positioned between adjacent light emitting elements 110 and between adjacent light emitting elements 110 and light receiving elements 110S, are formed.

[0186] The layer 128 can be formed using, for example, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film. The layer 128 can be formed by various film formation methods such as a sputtering method, an evaporation method, a CVD method, or an ALD method. In particular, the ALD method causes less damage to the layer to be formed, so the layer 128 formed directly on the organic layer 112 or the organic layer 155 is preferably formed using the ALD method.

[0187] In particular, oxides such as aluminum oxide, hafnium oxide, and silicon oxide, nitrides such as silicon nitride and aluminum nitride, and oxynitrides such as silicon oxynitride can be used for the layer 128. Such inorganic insulating materials can be formed by a film formation method such as a sputtering method, a CVD method, or an ALD method, and in particular, it is preferable to use an ALD method.

[0188] Furthermore, for example, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material can be used for the layer 128. In particular, it is preferable to use a low-melting-point material such as aluminum or silver.

[0189] Alternatively, a metal oxide such as indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO) can be used for the layer 128. Furthermore, indium oxide, indium zinc oxide (In—Zn oxide), indium tin oxide (In—Sn oxide), indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), or the like can be used. Alternatively, indium tin oxide containing silicon can be used.

[0190] Alternatively, the layer 128 may be made of a material that can be dissolved in a chemically stable solvent. In particular, a material that can be dissolved in water or alcohol is preferably used for the layer 128. When forming the layer 128, it is preferable to apply the layer 128 by a wet film formation method in a state where the layer 128 is dissolved in a solvent such as water or alcohol, and then perform heat treatment to evaporate the solvent. In this case, performing heat treatment under a reduced pressure atmosphere is preferable because the solvent can be removed at a low temperature in a short time, thereby reducing thermal damage to the organic layer 112 or the organic layer 155.

[0191] Wet film formation methods that can be used to form the layer 128 include spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0192] The layer 128 may be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0193] The insulating layer 125 is preferably made of the same material as the layer 128. For example, an aluminum oxide film is preferably formed by ALD. The ALD method is preferable because it can reduce damage to the surface to be formed and can form a film with high coverage. The thickness of the insulating layer 125 is preferably 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less.

[0194] Since the insulating layer 125 is formed in contact with the side surfaces of the EL layer and the photoelectric conversion layer, it is preferably formed by a method that causes little damage to the EL layer and the photoelectric conversion layer. The insulating layer 125 is formed at a temperature lower than the heat-resistant temperature of the EL layer. The substrate temperature when forming the insulating layer 125 is typically 200° C. or lower, preferably 180° C. or lower, more preferably 160° C. or lower, more preferably 140° C. or lower, more preferably 120° C. or lower, and more preferably 100° C. or lower.

[0195] It is preferable to use a photosensitive organic resin as the resin layer 126. In particular, it is preferable to use a photosensitive acrylic resin. Note that in this specification and the like, the acrylic resin does not only refer to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0196] The resin layer 126 is preferably formed by, for example, a spin coating method or an inkjet method, etc. However, the method is not limited to these, and the resin layer 126 can also be formed by a wet film formation method such as dipping, spray coating, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0197] Subsequently, the common layer 114 is formed to cover the organic layers 112, 155, and the resin layer 126. The common layer 114 can be formed by, for example, sputtering or vacuum deposition.

[0198] Subsequently, the common electrode 113 is formed to cover the common layer 114. The common electrode 113 can be formed by, for example, sputtering or vacuum deposition.

[0199] The common layer 114 and the common electrode 113 are preferably formed using a shielding mask (also referred to as a metal mask or a rough metal mask) for defining a film formation area, rather than being formed over the entire surface of the substrate 101. The common layer 114 is preferably formed in a region where each light-emitting element 110 and light-receiving element 110S are provided, and the common electrode 113 is preferably formed in a predetermined region including a region where each light-emitting element 110 and light-receiving element 110S are provided and a region where an electrode electrically connected to the common electrode 113 is provided.

[0200] Through the above steps, the light emitting element 110 and the light receiving element 110S can be fabricated.

[0201] Next, the protective layer 121 is formed on the common electrode 113. The inorganic insulating film used for the protective layer 121 is preferably formed by sputtering, PECVD, or ALD. The ALD method is particularly preferred because it has excellent step coverage and is less likely to cause defects such as pinholes. The organic insulating film is preferably formed by inkjet printing, because it can form a uniform film in a desired region.

[0202] The subsequent steps will be described with reference to the drawings. Figures 13 to 15 are cross-sectional schematic views illustrating steps of forming the light-shielding layer 123 included in the display device 100 of one embodiment of the present invention. Figures 13 and 14 are cross-sectional views illustrating steps of forming the light-shielding layer 123 over a structure on a substrate 101. Figure 15 is a cross-sectional view illustrating steps of forming the light-shielding layer 123 over a structure on a substrate 170. The cross-sectional views illustrate a cross section taken along dashed line A1-A2 in Figure 1A.

[0203] A light-shielding film 123a, which will later become the light-shielding layer 123, is formed on the protective layer 121 ( FIG. 13A ). The light-shielding film 123a preferably contains a material that absorbs at least a portion of visible light. For example, the light-shielding film 123a preferably contains a material that absorbs at least one of the lights emitted by the light-emitting element 110R (not shown), the light-emitting element 110G, and the light-emitting element 110B. For example, the light-shielding film 123a itself may be made of a material that absorbs visible light (e.g., a colored organic or inorganic material), or the light-shielding film 123a may contain a pigment that absorbs visible light. For example, the light-shielding film 123a may be a resin that contains carbon black as a pigment and functions as a black matrix, or a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light.

[0204] The light-shielding film 123a can be formed by vacuum deposition, sputtering, CVD, ALD, or the like.

[0205] Next, a resist mask 190a is formed on the light-shielding film 123a. The resist mask 190a can be made of a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material. When a positive acrylic resin is used for the resist mask 190a, visible light or ultraviolet light is irradiated using a mask 136 in areas where the light-shielding layer 123 will not be formed in a later step (FIG. 13B).

[0206] Subsequently, development is performed to remove the exposed areas of the resist mask 190a, thereby forming a resist mask 190b (FIG. 13C). When an acrylic resin is used for the resist mask 190a, it is preferable to use an alkaline solution as the developer, such as a tetramethylammonium hydroxide (TMAH) solution.

[0207] Subsequently, residues (so-called scum) remaining after development may be removed, for example, by ashing using oxygen plasma.

[0208] Next, the light-shielding film 123a is etched using the resist mask 190b as a mask to form the light-shielding layer 123 (FIG. 14A). The etching can be performed by dry etching or wet etching. Note that the etching may reduce the thickness of the resist mask 190b or the thickness of the protective layer 121 in a region that does not overlap with the light-shielding layer 123.

[0209] Next, the resist mask 190b is removed to expose the light-shielding layer 123 ( FIG. 14B ). The resist mask 190b can be removed by wet etching or dry etching. In particular, it is preferable to remove the resist mask 190b by dry etching (also referred to as plasma ashing) using oxygen gas as an etching gas. Note that the etching process may reduce the thickness of the light-shielding layer 123 or the thickness of a region of the protective layer 121 that does not overlap with the light-shielding layer 123.

[0210] The above is an example of a method for forming the light-shielding layer 123 on the structure on the substrate 101.

[0211] Next, an example of a method for forming the light-shielding layer 123 on the structure on the substrate 170 will be described.

[0212] First, a light-shielding layer 172 is formed on a substrate 170 .

[0213] It is preferable to use a material with high light transmittance as the substrate 170. For example, a glass material or a resin material can be used. Alternatively, an optically functional material such as a polarizing plate or a light diffusion film can be used as the substrate 170.

[0214] The light-shielding layer 172 is provided on the substrate 170 so as to be located between adjacent light-emitting elements 110 and between adjacent light-emitting elements 110 and light-receiving elements 110S in a plan view of the display device 100 (FIG. 1A).

[0215] The light-shielding layer 172 can be made of the same material as the light-shielding layer 123. The light-shielding layer 172 can be formed by vacuum deposition, sputtering, CVD, ALD, or the like.

[0216] Subsequently, a light-shielding film 123b, which will later become the light-shielding layer 123, is formed on the substrate 170 on which the light-shielding layer 172 has been formed (FIG. 15A).

[0217] The light-shielding film 123b can be made of the same material as the light-shielding film 123a described above. The light-shielding film 123b can be formed by vacuum deposition, sputtering, CVD, ALD, or the like.

[0218] Next, a resist mask 191a is formed on the light-shielding film 123b. The resist mask 191a can be made of the same material as the resist mask 190a described above. When a positive acrylic resin is used for the resist mask 191a, visible light or ultraviolet light is irradiated using a mask 137 to areas where the light-shielding layer 123 will not be formed in a later step (FIG. 15B).

[0219] Subsequently, development is performed to remove the exposed areas of the resist mask 191a, thereby forming a resist mask 191b (FIG. 15C). When an acrylic resin is used for the resist mask 191a, it is preferable to use an alkaline solution as the developer, such as a tetramethylammonium hydroxide (TMAH) solution.

[0220] Subsequently, residues (so-called scum) remaining after development may be removed, for example, by ashing using oxygen plasma.

[0221] Next, the light-shielding film 123b is etched using the resist mask 191b as a mask to form the light-shielding layer 123 (FIG. 15D). The etching process can be the same as that for the light-shielding film 123a described above. Note that the etching process may reduce the thickness of the resist mask 191b or the thickness of the light-shielding layer 172 in a region that does not overlap with the light-shielding layer 123.

[0222] Next, the resist mask 191b is removed to expose the light-shielding layer 123 (FIG. 15E). The resist mask 191b can be removed by the same etching method as used to remove the resist mask 190b. Note that this etching process may reduce the thickness of the light-shielding layer 123 or the thickness of the light-shielding layer 172 in a region that does not overlap with the light-shielding layer 123.

[0223] The above is an example of a method for forming the light-shielding layer 123 on the structure on the substrate 170.

[0224] Next, the structure on the substrate 101 (FIG. 14B) and the structure on the substrate 170 (FIG. 15E) are bonded together using an adhesive layer 171.

[0225] The adhesive layer 171 can be made of various curable adhesives such as a photo-curable adhesive such as an ultraviolet curable adhesive, a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive.

[0226] Through the above steps, the display device 100 of one embodiment of the present invention can be manufactured (FIG. 1B).

[0227] This completes the description of the example of the method for manufacturing the display device.

[0228] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0229] In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described. Here, a display device capable of displaying an image will be described, but the display device can also be used by using a light-emitting element as a light source.

[0230] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch-type terminals, tablet terminals, personal digital assistants, and sound reproducing devices.

[0231] [Display Device 400] FIG. 16 shows a perspective view of display device 400, and FIG. 17A shows a cross-sectional view of display device 400.

[0232] The display device 400 has a configuration in which a substrate 452 and a substrate 451 are bonded together. In Fig. 16, the substrate 452 is clearly indicated by a dashed line.

[0233] The display device 400 includes a display portion 462, a circuit 464, wiring 465, and the like. Fig. 16 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400. Therefore, the structure shown in Fig. 16 can also be considered as a display module including the display device 400, an IC (integrated circuit), and an FPC.

[0234] The circuit 464 can be, for example, a scanning line driver circuit.

[0235] The wiring 465 has a function of supplying signals and power to the display portion 462 and the circuit 464. The signals and power are input to the wiring 465 from the outside via the FPC 472 or input to the wiring 465 from the IC 473.

[0236] 16 shows an example in which an IC 473 is provided on a substrate 451 by a COG method, a COF (chip on film) method, or the like. The IC 473 can be, for example, an IC including a scanning line driver circuit or a signal line driver circuit. Note that the display device 400 and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0237] 17A shows an example of a cross section of the display device 400, which is obtained by cutting a part of a region including the FPC 472, a part of the circuit 464, a part of the display unit 462, and a part of a region including a connection portion. In FIG. 17A, an example of a cross section of the display unit 462 is shown, in particular, by cutting a region including the light-emitting element 430b that emits green light (G) and the light-receiving element 440 that receives reflected light (L).

[0238] A display device 400 shown in FIG. 17A includes a transistor 252, a transistor 260, a transistor 258, a light-emitting element 430b, a light-receiving element 440, and the like between a substrate 451 and a substrate 452.

[0239] The light-emitting element 430b and the light-receiving element 440 can be any of the light-emitting elements or light-receiving elements exemplified above.

[0240] Here, when a pixel of a display device has three types of subpixels having light-emitting elements that emit different colors, the three subpixels include subpixels of three colors: red (R), green (G), and blue (B), or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). When a pixel of a display device has four subpixels, the four subpixels include subpixels of four colors: R, G, B, and white (W), or subpixels of four colors: R, G, B, and Y. Alternatively, the subpixels may be equipped with light-emitting elements that emit infrared light.

[0241] The light receiving element 440 may be a photoelectric conversion element sensitive to light in the red, green, or blue wavelength range, or a photoelectric conversion element sensitive to light in the infrared wavelength range.

[0242] A light-shielding layer 419 is provided on the surface of the substrate 452 facing the substrate 451, so as to have an area overlapping with the resin layer 422 on the substrate 451. In addition, the resin layer 422 is provided sandwiched between the light-emitting element 430b and the light-receiving element 440, and two light-shielding layers 417 are provided on the light-shielding layer 419 facing the resin layer 422. The substrate 452 and the protective layer 416 are bonded via an adhesive layer 442. The adhesive layer 442 is provided so as to overlap each of the light-emitting element 430b and the light-receiving element 440, and a solid sealing structure is applied to the display device 400.

[0243] The light-emitting element 430b and the light-receiving element 440 each have a conductive layer 411a, a conductive layer 411b, and a conductive layer 411c as pixel electrodes. The conductive layer 411b is reflective to visible light and functions as a reflective electrode. The conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0244] A conductive layer 411a included in the light-emitting element 430b is electrically connected to a conductive layer 272b included in the transistor 260 through an opening provided in the insulating layer 294. The transistor 260 has a function of controlling driving of the light-emitting element. On the other hand, a conductive layer 411a included in the light-receiving element 440 is electrically connected to a conductive layer 272b included in the transistor 258 through an opening provided in the insulating layer 294. The transistor 258 has a function of controlling the timing of exposure using the light-receiving element 440, etc.

[0245] An organic layer 412G or an organic layer 412S is provided covering the pixel electrode. An insulating layer 421 is provided in contact with the side surfaces of the organic layer 412G and the organic layer 412S, and a resin layer 422 is provided on the insulating layer 421. A common layer 414, a common electrode 413, and a protective layer 416 are provided covering the organic layer 412G and the organic layer 412S. The protective layer 416 covering the light-emitting element prevents impurities such as water from entering the light-emitting element, thereby improving the reliability of the light-emitting element. The upper surface of the resin layer 422 has a substantially flat shape, and one light-shielding layer 417 is provided on the flat region of the resin layer 422 located between the light-emitting element 430b and the light-receiving element 440. The light-shielding layer 417 on the resin layer 422 and the two light-shielding layers 417 on the light-shielding layer 419 are arranged in a comb-like shape with gaps between them in a planar view. By disposing the light-shielding layer 417 in this manner, it is possible to prevent a portion of the light emitted by the light-emitting element 430b from entering the adjacent light-receiving element 440 as stray light. This makes it possible to reduce noise during imaging. It is also possible to realize a display device that can capture images with a high S / N ratio and high sensitivity.

[0246] Light G emitted by the light-emitting element 430b is emitted toward the substrate 452. The light-receiving element 440 receives light L incident through the substrate 452 and converts it into an electrical signal. The substrate 452 is preferably made of a material that is highly transparent to visible light.

[0247] The transistor 252, the transistor 260, and the transistor 258 are all formed over a substrate 451. These transistors can be manufactured using the same material and through the same process.

[0248] Note that the transistor 252, the transistor 260, and the transistor 258 may be fabricated to have different structures. For example, transistors may be fabricated with or without a bottom gate, or transistors may be fabricated with different materials and / or thicknesses of semiconductors, gate electrodes, gate insulating layers, source electrodes, and drain electrodes.

[0249] The substrate 451 and the insulating layer 262 are bonded together by an adhesive layer 455 .

[0250] In a method for manufacturing the display device 400, first, a formation substrate provided with the insulating layer 262, the transistors, the light-emitting elements, the light-receiving element, and the like is bonded to a substrate 452 provided with the light-shielding layers 419 and 417 using an adhesive layer 442. Then, the formation substrate is peeled off, and a substrate 451 is attached to the exposed surface, thereby transferring each component formed on the formation substrate to the substrate 451. The substrate 451 and the substrate 452 each preferably have flexibility. This can increase the flexibility of the display device 400.

[0251] A connection portion 254 is provided in a region of the substrate 451 where the substrate 452 does not overlap. In the connection portion 254, a wiring 465 is electrically connected to an FPC 472 via a conductive layer 466 and a connection layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and the FPC 472 to be electrically connected via the connection layer 292.

[0252] The transistor 252, the transistor 260, and the transistor 258 each include a conductive layer 271 functioning as a gate electrode, an insulating layer 261 functioning as a gate insulating layer, a semiconductor layer 281 including a channel formation region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 functioning as a gate insulating layer, a conductive layer 273 functioning as a gate electrode, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel formation region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel formation region 281i.

[0253] The conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and the insulating layer 265, respectively. One of the conductive layer 272a and the conductive layer 272b functions as a source electrode, and the other functions as a drain electrode.

[0254] 17A shows an example in which the insulating layer 275 covers the top surface and side surfaces of the semiconductor layer 281. The conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and the insulating layer 265, respectively.

[0255] 17B , the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281 but does not overlap with the low-resistance region 281n. For example, the structure shown in FIG. 17B can be manufactured by processing the insulating layer 275 using the conductive layer 273 as a mask. In FIG. 17B , an insulating layer 265 is provided to cover the insulating layer 275 and the conductive layer 273, and the conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings in the insulating layer 265. Furthermore, an insulating layer 268 may be provided to cover the transistor.

[0256] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0257] The transistors 252, 260, and 258 each have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving the other.

[0258] The crystallinity of a semiconductor material used for a semiconductor layer of a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0259] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0260] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. Use of a metal oxide with a wide band gap can reduce the off-state current of the OS transistor.

[0261] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (wherein M is one or more selected from gallium, aluminum, yttrium, tin, antimony, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium. Note that a metal oxide containing indium, M, and zinc may be referred to as In-M-Zn oxide hereinafter.

[0262] For example, it is preferable to use In-Ga-Zn oxide, In-Sn-Zn oxide, or In-Ga-Zn oxide containing Sn.

[0263] Alternatively, the semiconductor layer of the transistor may include silicon, such as amorphous silicon or crystalline silicon (low-temperature polysilicon (also referred to as LTPS) or single-crystal silicon).

[0264] In particular, low-temperature polysilicon has relatively high mobility and can be formed on a glass substrate, and therefore can be suitably used in display devices. For example, a transistor using low-temperature polysilicon in a semiconductor layer (LTPS transistor) can be applied to the transistor 252 and the like in the driver circuit, and a transistor using an oxide semiconductor in a semiconductor layer (OS transistor) can be applied to the transistor 260, the transistor 258, and the like provided in the pixel. By using both an LTPS transistor and an OS transistor, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. Note that, as a more preferred example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction between wirings and an LTPS transistor as a transistor for controlling current.

[0265] The display device shown in FIG. 17A includes an OS transistor and separate organic layers between light-emitting elements. This configuration significantly reduces leakage current that may flow through a transistor, leakage current that may flow between adjacent light-emitting elements, and leakage current that may flow between adjacent light-emitting elements and a light-receiving element (also referred to as lateral leakage current or side leakage current). Furthermore, with this configuration, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. By significantly reducing the leakage current that may flow through a transistor and the lateral leakage current between light-emitting elements, a display with extremely low light leakage (so-called floating black) that may occur during black display (also referred to as true black display) can be achieved.

[0266] The transistors included in the circuit 464 may have the same structure as or different from the transistors included in the display portion 462. The transistors included in the circuit 464 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 462 may all have the same structure or may have two or more types of structures.

[0267] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0268] It is preferable to use an inorganic insulating film for each of the insulating layers 261, 262, 265, 268, and 275. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above-described inorganic insulating films may be stacked.

[0269] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This makes it possible to prevent impurities from entering from the edge of the display device 400 through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0270] An organic insulating film is suitable for the insulating layer 294 that functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0271] It is preferable to provide a light-shielding layer 419 on the surface of substrate 452 facing substrate 451. In addition, various optical members can be arranged on the outer side of substrate 452 (the side opposite substrate 451). Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, etc. may be arranged on the outer side of substrate 452.

[0272] 17A shows a connection portion 278. The common electrode 413 and a wiring are electrically connected at the connection portion 278. FIG. 17A shows an example in which the same layered structure as that of the pixel electrode is applied to the wiring.

[0273] The substrate 451 and the substrate 452 can each be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting element is extracted. Using a flexible material for the substrate 451 and the substrate 452 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used for the substrate 451 or the substrate 452.

[0274] The substrates 451 and 452 may each be made of a polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of the substrates 451 and 452 may be made of glass having a thickness sufficient to provide flexibility.

[0275] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0276] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0277] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0278] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0279] The adhesive layer can be made of various curable adhesives, such as photocurable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0280] The connection layer 292 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0281] Materials that can be used for conductive layers such as gate electrodes, source electrodes, and drain electrodes of transistors, as well as various wirings and electrodes that constitute a display device, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0282] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, may be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) may be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin the metal materials to ensure light-transmitting properties. A stacked film of the above materials may also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials may also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.

[0283] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0284] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0285] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0286] Embodiment 3 In this embodiment, a display device according to one embodiment of the present invention will be described.

[0287] A display device of one embodiment of the present invention includes a light-receiving element (also referred to as a light-receiving device) and a light-emitting element (also referred to as a light-emitting device). Alternatively, the display device of one embodiment of the present invention may include a light-receiving and light-emitting element (also referred to as a light-emitting and receiving device) and a light-emitting element.

[0288] First, a display device having a light receiving element and a light emitting element will be described.

[0289] A display device according to one embodiment of the present invention includes a light-receiving element and a light-emitting element in a light-receiving and light-emitting portion. In the display device according to one embodiment of the present invention, the light-emitting and receiving portion includes light-emitting elements arranged in a matrix, and an image can be displayed in the light-receiving and light-emitting portion. The light-receiving and light-emitting portion also includes light-receiving elements arranged in a matrix, and the light-receiving and light-emitting portion has one or both of an imaging function and a sensing function. The light-receiving and light-emitting portion can be used as an image sensor, a touch sensor, or the like. That is, by detecting light in the light-receiving and light-emitting portion, an image can be captured and a touch operation of an object (such as a finger or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can utilize the light-emitting element as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced.

[0290] In a display device of one embodiment of the present invention, when light emitted by a light-emitting element included in the light-emitting and receiving portion is reflected (or scattered) by an object, the light-receiving element can detect the reflected light (or scattered light); therefore, imaging, detection of touch operations, and the like are possible even in dark places.

[0291] The light-emitting element included in the display device of one embodiment of the present invention functions as a display element (also referred to as a display device).

[0292] As the light-emitting element, it is preferable to use an EL element (also referred to as an EL device) such as an OLED or a QLED. Examples of light-emitting materials contained in the EL element include a fluorescent material, a phosphorescent material, an inorganic compound (such as a quantum dot material), and a thermally activated delayed fluorescence (TADF) material. Furthermore, an LED such as a micro LED can also be used as the light-emitting element.

[0293] A display device according to one embodiment of the present invention has a function of detecting light using a light-receiving element.

[0294] When the light receiving element is used as an image sensor, the display device can capture an image using the light receiving element, for example, the display device can be used as a scanner.

[0295] An electronic device to which the display device of one embodiment of the present invention is applied can acquire data related to biometric information such as a fingerprint or palm print by using a function as an image sensor. That is, a biometric authentication sensor can be built into the display device. The built-in biometric authentication sensor in the display device reduces the number of components in the electronic device compared to a case in which a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0296] Furthermore, when the light receiving element is used as a touch sensor, the display device can detect a touch operation of an object using the light receiving element.

[0297] The light receiving element may be, for example, a pn-type or pin-type photodiode. The light receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on the light receiving element and generates electric charge. The amount of electric charge generated by the light receiving element is determined based on the amount of light incident on the light receiving element.

[0298] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0299] In one embodiment of the present invention, an organic EL element (also referred to as an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed over the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL element.

[0300] If all layers constituting an organic EL element and an organic photodiode were to be fabricated separately, the number of film-forming steps would be enormous. However, since organic photodiodes have many layers that can be configured in common with organic EL elements, the number of film-forming steps can be reduced by forming the layers that can be configured in common at the same time.

[0301] For example, one of the pair of electrodes (common electrode) can be a layer common to the light-receiving element and the light-emitting element. Furthermore, for example, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer can be a layer common to the light-receiving element and the light-emitting element. By having a common layer for the light-receiving element and the light-emitting element in this way, the number of film formations and the number of masks can be reduced, thereby reducing the manufacturing process and manufacturing costs of the display device. Furthermore, a display device having a light-receiving element can be manufactured using existing manufacturing equipment and manufacturing methods for display devices.

[0302] Next, a display device having light emitting and receiving elements and a light emitting element will be described. Note that the description of the same functions, actions, effects, etc. as those described above may be omitted.

[0303] In a display device according to one embodiment of the present invention, a subpixel that exhibits one of the colors has a light-emitting / receiving element instead of a light-emitting element, and a subpixel that exhibits the other color has a light-emitting element. The light-emitting / receiving element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three subpixels, i.e., a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-emitting / receiving element, and the other subpixels have light-emitting elements. Therefore, the light-emitting / receiving portion of the display device according to one embodiment of the present invention has a function of displaying an image using both the light-emitting / receiving element and the light-emitting element.

[0304] Since the light-receiving and light-emitting element serves as both a light-emitting element and a light-receiving element, a pixel can be given a light-receiving function without increasing the number of subpixels included in the pixel. This allows one or both of an imaging function and a sensing function to be added to the light-receiving and light-emitting portion of the display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, the display device of one embodiment of the present invention can have a higher pixel aperture ratio and can easily achieve higher resolution than a display device in which a subpixel having a light-receiving element is provided separately from a subpixel having a light-emitting element.

[0305] In a display device according to one embodiment of the present invention, light-emitting and receiving elements and light-emitting elements are arranged in a matrix in a light-emitting and receiving portion, and an image can be displayed in the light-emitting and receiving portion. The light-emitting and receiving portion can be used as an image sensor, a touch sensor, or the like. In the display device according to one embodiment of the present invention, the light-emitting element can be used as a light source for the sensor. Therefore, imaging, detection of a touch operation, and the like can be performed even in a dark place.

[0306] The light-emitting / receiving element can be fabricated by combining an organic EL element and an organic photodiode. For example, the light-emitting / receiving element can be fabricated by adding an active layer of an organic photodiode to the layered structure of the organic EL element. Furthermore, the light-emitting / receiving element fabricated by combining an organic EL element and an organic photodiode can suppress an increase in the number of film-forming steps by forming layers that can have a common configuration with the organic EL element in a single step.

[0307] For example, one of the pair of electrodes (common electrode) may be a layer common to the light-emitting and light-emitting elements. Also, for example, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a layer common to the light-emitting and light-emitting elements.

[0308] Note that the layers of the light emitting / receiving element may have different functions depending on whether the light emitting / receiving element functions as a light receiving element or a light emitting element. In this specification, the components are referred to based on their functions when the light emitting / receiving element functions as a light emitting element.

[0309] The display device of this embodiment mode has a function of displaying an image using a light-emitting element and a light-emitting / light-emitting element. That is, the light-emitting element and the light-emitting / light-emitting element function as display elements.

[0310] The display device of this embodiment has a function of detecting light using a light receiving and emitting element, which can detect light having a shorter wavelength than light emitted by the light receiving and emitting element itself.

[0311] When the light-emitting / receiving elements are used as an image sensor, the display device of this embodiment can capture an image using the light-emitting / receiving elements. When the light-emitting / receiving elements are used as a touch sensor, the display device of this embodiment can detect a touch operation of an object using the light-emitting / receiving elements.

[0312] The light-receiving / light-emitting element functions as a photoelectric conversion element. The light-receiving / light-emitting element can be fabricated by adding an active layer of a light-receiving element to the configuration of the light-emitting element. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving / light-emitting element.

[0313] In particular, it is preferable to use an organic photodiode active layer having a layer containing an organic compound as the light-receiving / light-emitting element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0314] A display device, which is an example of a display device according to one embodiment of the present invention, will be described in more detail below with reference to drawings.

[0315] 18A shows a schematic diagram of a display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light receiving element 212, a light emitting element 211R, a light emitting element 211G, a light emitting element 211B, a functional layer 203, and the like.

[0316] The light-emitting elements 211R, 211G, 211B, and light-receiving element 212 are provided between the substrate 201 and the substrate 202. The light-emitting elements 211R, 211G, and 211B emit red (R), green (G), and blue (B) light, respectively. Note that hereinafter, when there is no need to distinguish between the light-emitting elements 211R, 211G, and 211B, they may be referred to as light-emitting elements 211.

[0317] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more sub-pixels. Each sub-pixel has one light-emitting element. For example, a pixel may have three sub-pixels (e.g., three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M)), or four sub-pixels (e.g., four colors of R, G, B, and white (W), or four colors of R, G, B, and Y). Each pixel also has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Alternatively, one pixel may have multiple light-receiving elements 212.

[0318] 18A shows a state in which finger 220 touches the surface of substrate 202. A portion of the light emitted by light-emitting element 211G is reflected at the contact point between substrate 202 and finger 220. A portion of the reflected light is then incident on light-receiving element 212, making it possible to detect that finger 220 has touched substrate 202. In other words, display panel 200 can function as a touch panel.

[0319] The functional layer 203 has a circuit for driving the light-emitting elements 211R, 211G, and 211B, and a circuit for driving the light-receiving element 212. The functional layer 203 is provided with switches, transistors, capacitors, wiring, and the like. Note that when the light-emitting elements 211R, 211G, and 211B and the light-receiving element 212 are driven by a passive matrix method, a configuration without switches, transistors, and the like may be used.

[0320] It is preferable that the display panel 200 has a function of detecting the fingerprint of a finger 220. Fig. 18B is a schematic enlarged view of a contact portion when the finger 220 is in contact with the substrate 202. Fig. 18B also shows light-emitting elements 211 and light-receiving elements 212 arranged alternately.

[0321] A fingerprint is formed by concave and convex portions of the finger 220. Therefore, the convex portions of the fingerprint are in contact with the substrate 202 as shown in FIG.

[0322] Light reflected from a surface, interface, etc. is classified into specularly reflected light and diffusely reflected light. Specularly reflected light is highly directional light in which the angle of incidence and the angle of reflection are the same, while diffusely reflected light is low-directional light in which the intensity is less dependent on the angle. The light reflected from the surface of the finger 220 is dominated by the diffusely reflected light component of the specularly reflected light and diffusely reflected light. On the other hand, the light reflected from the interface between the substrate 202 and the atmosphere is dominated by the specularly reflected light component.

[0323] The intensity of light reflected by the contact or non-contact surface between the finger 220 and the substrate 202 and incident on the light receiving element 212 located directly below them is the sum of specularly reflected light and diffusely reflected light. As described above, at the concave portions of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specularly reflected light (indicated by the solid arrows) is dominant, whereas at the convex portions, they come into contact, so diffusely reflected light (indicated by the dashed arrows) from the finger 220 is dominant. Therefore, the intensity of light received by the light receiving element 212 located directly below the concave portions is higher than that of the light receiving element 212 located directly below the convex portions. This makes it possible to capture an image of the fingerprint of the finger 220.

[0324] A clear fingerprint image can be obtained by arranging the light receiving elements 212 at an interval smaller than the distance between two convex portions of a fingerprint, preferably the distance between adjacent convex and concave portions. Since the distance between convex and concave portions of a human fingerprint is approximately 200 μm, the interval between the light receiving elements 212 is, for example, 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and is 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0325] Fig. 18C shows an example of a fingerprint image captured by display panel 200. In Fig. 18C, the outline of finger 220 is indicated by a dashed line and the outline of contact portion 221 is indicated by a dashed line within imaging range 223. Within contact portion 221, a fingerprint 222 with high contrast can be captured due to differences in the amount of light incident on light receiving element 212.

[0326] The display panel 200 can also function as a touch panel or a pen tablet. Fig. 18D shows a state in which the tip of a stylus 225 is in contact with the substrate 202 and is slid in the direction of the dashed arrow.

[0327] As shown in Figure 18D, the diffuse reflected light scattered by the tip of the stylus 225 and the contact surface of the substrate 202 is incident on the light receiving element 212 located at the part overlapping with the contact surface, thereby enabling the position of the tip of the stylus 225 to be detected with high accuracy.

[0328] 18E shows an example of a trajectory 226 of the stylus 225 detected by the display panel 200. The display panel 200 is capable of detecting the position of a detectable object such as the stylus 225 with high positional accuracy, and therefore is also capable of performing high-resolution drawing in drawing applications, etc. Furthermore, unlike when a capacitive touch sensor, an electromagnetic induction touch pen, or the like is used, the position of even a highly insulating detectable object can be detected, and therefore the material of the tip of the stylus 225 is not a factor, and various writing implements (e.g., a brush, a glass pen, a feather pen, etc.) can be used.

[0329] 18F to 18H show an example of a pixel that can be applied to the display panel 200. FIG.

[0330] 18F and 18G each have a red (R) light-emitting element 211R, a green (G) light-emitting element 211G, a blue (B) light-emitting element 211B, and a light-receiving element 212. The pixel has a pixel circuit for driving the light-emitting element 211R, the light-emitting element 211G, the light-emitting element 211B, and the light-receiving element 212, respectively.

[0331] Fig. 18F shows an example in which three light-emitting elements and one light-receiving element are arranged in a 2 x 2 matrix, while Fig. 18G shows an example in which three light-emitting elements are arranged in a row, and one horizontally elongated light-receiving element 212 is arranged below them.

[0332] 18H is an example of a pixel having a white (W) light-emitting element 211W. Here, four light-emitting elements are arranged in a row, and a light-receiving element 212 is arranged below them.

[0333] The pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0334] [Configuration Example 2] Hereinafter, an example of a configuration including a light-emitting element that emits visible light, a light-emitting element that emits infrared light, and a light-receiving element will be described.

[0335] The display panel 200A shown in Fig. 19A includes a light-emitting element 211IR in addition to the configuration illustrated in Fig. 18A. The light-emitting element 211IR is a light-emitting element that emits infrared light IR. In this case, it is preferable to use an element that can receive at least the infrared light IR emitted by the light-emitting element 211IR as the light-receiving element 212. It is more preferable to use an element that can receive both visible light and infrared light as the light-receiving element 212.

[0336] As shown in FIG. 19A, when a finger 220 touches the substrate 202, the infrared light IR emitted from the light-emitting element 211IR is reflected by the finger 220, and a portion of the reflected light is incident on the light-receiving element 212, thereby obtaining position information of the finger 220.

[0337] 19B to 19D show examples of pixels that can be applied to the display panel 200A.

[0338] Fig. 19B shows an example in which three light-emitting elements (light-emitting element 211R, light-emitting element 211G, and light-emitting element 211B) are arranged in a row, and below them, light-emitting element 211IR and light-receiving element 212 are arranged side by side. Fig. 19C shows an example in which four light-emitting elements including light-emitting element 211IR are arranged in a row, and below them, light-receiving element 212 is arranged.

[0339] FIG. 19D shows an example in which three light-emitting elements (light-emitting element 211R, light-emitting element 211G, and light-emitting element 211B) and a light-receiving element 212 are arranged on all four sides with light-emitting element 211IR at the center.

[0340] In the pixels shown in FIGS. 19B to 19D, the positions of the light-emitting elements and the light-emitting elements and the light-receiving elements can be interchanged.

[0341] [Configuration Example 3] Hereinafter, an example of a configuration including a light-emitting element that emits visible light and a light-receiving / light-emitting element that emits visible light and receives visible light will be described.

[0342] The display panel 200B shown in Fig. 20A has a light-emitting element 211B, a light-emitting element 211G, and a light-receiving / light-emitting element 213R. The light-receiving / light-emitting element 213R functions as a light-emitting element that emits red (R) light and as a photoelectric conversion element that receives visible light. Fig. 20A shows an example in which the light-receiving / light-emitting element 213R receives green (G) light emitted by the light-emitting element 211G. The light-receiving / light-emitting element 213R may also receive blue (B) light emitted by the light-emitting element 211B. The light-receiving / light-emitting element 213R may also receive both green light and blue light.

[0343] For example, it is preferable that the light receiving / emitting element 213R receives light with a shorter wavelength than the light it emits. Alternatively, the light receiving / emitting element 213R may be configured to receive light with a longer wavelength than the light it emits (e.g., infrared light). The light receiving / emitting element 213R may be configured to receive light with a wavelength similar to the light it emits, but in that case, it may also receive the light it emits, which could reduce the light emission efficiency. Therefore, it is preferable that the light receiving / emitting element 213R is configured so that the peak of the emission spectrum and the peak of the absorption spectrum do not overlap as much as possible.

[0344] In addition, the light emitted by the light emitting / receiving element is not limited to red light. Furthermore, the light emitted by the light emitting element is not limited to a combination of green light and blue light. For example, the light emitting / receiving element may be an element that emits green or blue light and receives light of a wavelength different from the light it emits.

[0345] In this way, by having the light emitting / receiving element 213R function as both a light emitting element and a light receiving element, the number of elements arranged in one pixel can be reduced, which makes it easier to achieve higher definition, a higher aperture ratio, and higher resolution.

[0346] 20B to 20I show an example of a pixel that can be applied to the display panel 200B.

[0347] Fig. 20B shows an example in which the light emitting / receiving element 213R, the light emitting element 211G, and the light emitting element 211B are arranged in a row. Fig. 20C shows an example in which the light emitting element 211G and the light emitting element 211B are arranged alternately in the vertical direction, and the light emitting / receiving element 213R is arranged next to them.

[0348] FIG. 20D shows an example in which three light-emitting elements (light-emitting element 211G, light-emitting element 211B, and light-emitting element 211X) and one light-receiving / light-emitting element 213R are arranged in a 2x2 matrix. The light-emitting element 211X is an element that emits light other than R, G, and B. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), infrared light (IR), and ultraviolet light (UV). When the light-emitting element 211X emits infrared light, the light-receiving / light-emitting element preferably has the function of detecting infrared light or the function of detecting both visible light and infrared light. The wavelength of light detected by the light-receiving / light-emitting element can be determined depending on the application of the sensor.

[0349] FIG. 20E shows two pixels. An area including three elements surrounded by dotted lines corresponds to one pixel. Each pixel has a light-emitting element 211G, a light-emitting element 211B, and an optical element 213R. In the left pixel shown in FIG. 20E, the light-emitting element 211G is arranged in the same row as the optical element 213R, and the light-emitting element 211B is arranged in the same column as the optical element 213R. In the right pixel shown in FIG. 20E, the light-emitting element 211G is arranged in the same row as the optical element 213R, and the light-emitting element 211B is arranged in the same column as the optical element 211G. In the pixel layout shown in FIG. 20E, the optical element 213R, the light-emitting element 211G, and the light-emitting element 211B are arranged repeatedly in both odd and even rows, and in each column, optical elements or optical elements of different colors are arranged in the odd and even rows.

[0350] Fig. 20F shows four pixels to which a Pentile arrangement is applied, and two adjacent pixels have light-emitting or light-receiving elements that emit light of two different colors. Fig. 20F also shows the top view of the light-emitting or light-receiving elements.

[0351] The upper left pixel and the lower right pixel shown in Fig. 20F have a light emitting / receiving element 213R and a light emitting element 211G. The upper right pixel and the lower left pixel have a light emitting element 211G and a light emitting element 211B. That is, in the example shown in Fig. 20F, a light emitting element 211G is provided in each pixel.

[0352] The top surface shapes of the light-emitting element and the light-receiving / light-emitting element are not particularly limited and may be circular, elliptical, polygonal, polygonal with rounded corners, etc. Figure 20F etc. shows an example in which the top surface shapes of the light-emitting element and the light-receiving / light-emitting element are squares (diamonds) tilted at approximately 45 degrees. Note that the top surface shapes of the light-emitting element and the light-receiving / light-emitting element for each color may be different from each other, or may be the same for some or all of the colors.

[0353] In addition, the sizes of the light-emitting regions (or light-receiving regions) of the light-emitting elements and light-receiving / light-emitting elements of each color may be different from each other, or may be the same for some or all of the colors. For example, in Figure 20F, the area of ​​the light-emitting region of the light-emitting element 211G provided in each pixel may be smaller than the light-emitting regions (or light-receiving / light-emitting regions) of the other elements.

[0354] Fig. 20G is a modified example of the pixel array shown in Fig. 20F. Specifically, the configuration of Fig. 20G can be obtained by rotating the configuration of Fig. 20F by 45 degrees. Although Fig. 20F has been described as having two elements per pixel, it can also be understood that one pixel is composed of four elements, as shown in Fig. 20G.

[0355] Fig. 20H is a modified example of the pixel array shown in Fig. 20F. The upper left pixel and lower right pixel shown in Fig. 20H have light-emitting / receiving elements 213R and light-emitting elements 211G. The upper right pixel and lower left pixel have light-emitting / receiving elements 213R and light-emitting elements 211B. That is, in the example shown in Fig. 20H, each pixel is provided with a light-emitting / receiving element 213R. Because each pixel is provided with a light-emitting / receiving element 213R, the configuration shown in Fig. 20H can capture images with higher resolution than the configuration shown in Fig. 20F. This can improve the accuracy of biometric authentication, for example.

[0356] FIG. 20I is a modified example of the pixel array shown in FIG. 20H, and is obtained by rotating the pixel array by 45 degrees.

[0357] In FIG. 20I, a description will be given assuming that one pixel is composed of four elements (two light-emitting elements and two light-receiving and light-emitting elements). In this way, one pixel can capture images with high resolution by including multiple light-receiving and light-emitting elements with light-receiving functions. This can improve the accuracy of biometric authentication. For example, the image resolution can be set to the root double of the display resolution.

[0358] A display device to which the configuration shown in Figure 20H or 20I is applied has p (p is an integer of 2 or more) first light-emitting elements, q (q is an integer of 2 or more) second light-emitting elements, and r (r is an integer greater than p and greater than q) light-receiving and light-emitting elements. p and r satisfy r = 2p. Furthermore, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting element emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0359] For example, when detecting a touch operation using a light-emitting / receiving element, it is preferable that the light emitted from the light source is difficult for the user to see. Because blue light is less visible than green light, it is preferable that a light-emitting element that emits blue light be used as the light source. Therefore, it is preferable that the light-emitting / receiving element has a function of receiving blue light. However, this is not limited thereto, and the light-emitting element used as the light source can be appropriately selected depending on the sensitivity of the light-emitting / receiving element.

[0360] As described above, pixels with various arrangements can be applied to the display device of this embodiment mode.

[0361] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0362] Embodiment 4 In this embodiment, a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device) that can be used for a light-emitting and receiving device that is one embodiment of the present invention will be described.

[0363] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0364] In this specification and the like, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be combined with a colored layer (e.g., a color filter) to realize a full-color display device.

[0365] Furthermore, light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission with a single structure, light-emitting layers can be selected so that the light emitted from each of the two or more light-emitting layers has a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0366] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, with each light-emitting unit preferably including one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the luminance per given current can be increased, and the device can be made more reliable than a single-structure light-emitting device. To obtain white light emission with a tandem structure, the device can be configured to combine light from the light-emitting layers of multiple light-emitting units to obtain white light. The combination of light-emitting colors that can produce white light is the same as for a single-structure device. In a tandem-structure device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0367] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. When it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0368] [Device Structure] Next, detailed structures of a light-emitting element, a light-receiving element, and a light-emitting and light-emitting element that can be used in the display device of one embodiment of the present invention will be described.

[0369] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward a substrate on which a light-emitting element is formed, and a dual emission type that emits light to both sides.

[0370] In this embodiment, a top-emission display device will be described as an example.

[0371] In this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (e.g., light-emitting elements, light-emitting layers), when describing matters common to each element, the alphabet will be omitted. For example, when describing matters common to light-emitting layer 383R, light-emitting layer 383G, etc., they may be referred to as light-emitting layer 383.

[0372] The display device 380A shown in Figure 21A has a light receiving element 370PD, a light emitting element 370R that emits red (R) light, a light emitting element 370G that emits green (G) light, and a light emitting element 370B that emits blue (B) light.

[0373] Each light-emitting element has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​a light-emitting layer 383 (light-emitting layer 383R, light-emitting layer 383G, and light-emitting layer 383B), an electron transport layer 384, an electron injection layer 385, and a common electrode 375, which are stacked in this order. The light-emitting element 370R has the light-emitting layer 383R, the light-emitting element 370G has the light-emitting layer 383G, and the light-emitting element 370B has the light-emitting layer 383B. The light-emitting layer 383R contains a light-emitting material that emits red light, the light-emitting layer 383G contains a light-emitting material that emits green light, and the light-emitting layer 383B contains a light-emitting material that emits blue light.

[0374] The light emitting element is an electroluminescent element that emits light toward the common electrode 375 when a voltage is applied between the pixel electrode 371 and the common electrode 375 .

[0375] The light receiving element 370PD has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order.

[0376] The light receiving element 370PD is a photoelectric conversion element that receives light incident from outside the display device 380A and converts it into an electrical signal.

[0377] In this embodiment, in both the light-emitting element and the light-receiving element, the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode. In other words, the light-receiving element is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, so that the light incident on the light-receiving element can be detected, an electric charge can be generated, and the electric charge can be extracted as a current.

[0378] In the display device of this embodiment, an organic compound is used for the active layer 373 of the light-receiving element 370PD. The layers of the light-receiving element 370PD other than the active layer 373 can be configured in common with the light-emitting element. Therefore, by simply adding a step of forming the active layer 373 to the manufacturing process of the light-emitting element, the light-receiving element 370PD can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-receiving element 370PD can be formed on the same substrate. Therefore, the light-receiving element 370PD can be built into the display device without significantly increasing the number of manufacturing steps.

[0379] The display device 380A shows an example in which the light receiving element 370PD and the light emitting element have a common configuration, except that the active layer 373 of the light receiving element 370PD and the light emitting layer 383 of the light emitting element are fabricated separately. However, the configuration of the light receiving element 370PD and the light emitting element is not limited to this. The light receiving element 370PD and the light emitting element may have layers fabricated separately from each other in addition to the active layer 373 and the light emitting layer 383. It is preferable that the light receiving element 370PD and the light emitting element have one or more layers used in common (common layers). This allows the light receiving element 370PD to be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0380] A conductive film that transmits visible light is used for the electrode from which light is extracted, either the pixel electrode 371 or the common electrode 375. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.

[0381] The light-emitting element included in the display device of this embodiment preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes included in the light-emitting element preferably has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other preferably has an electrode that is reflective to visible light (reflective electrode). When the light-emitting element has a microcavity structure, light emitted from the light-emitting layer can be resonated between both electrodes, thereby intensifying the light emitted from the light-emitting element.

[0382] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0383] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light emitting element. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ When the light-emitting element emits near-infrared light (light having a wavelength of 750 nm or more and 1300 nm or less), the transmittance or reflectance of these electrodes for near-infrared light preferably satisfies the above-mentioned numerical range, similar to the transmittance or reflectance for visible light.

[0384] The light-emitting element has at least a light-emitting layer 383. The light-emitting element may further have, in addition to the light-emitting layer 383, a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, an electron-blocking material, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like.

[0385] For example, the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer in common, or the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer formed differently from each other.

[0386] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0387] As the hole transporting material, a material having high hole transporting properties that can be used for the hole transport layer, which will be described later, can be used.

[0388] Examples of the acceptor material include oxides of metals belonging to Groups 4 to 8 of the periodic table. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferable because it is stable in the air, has low hygroscopicity, and is easy to handle. Also, organic acceptor materials containing fluorine can be used. Organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used. Note that a material with high hole injection properties may be a mixture of an oxide of a metal belonging to Groups 4 to 8 of the periodic table (typically, molybdenum oxide) and an organic material.

[0389] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. In a light receiving element, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 −６ cm ２A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0390] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a light-receiving element, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a concentration of 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0391] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0392] The light-emitting layer 383 is a layer containing a light-emitting substance. The light-emitting layer 383 can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0393] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0394] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0395] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0396] The light-emitting layer 383 may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material can be used.

[0397] The light-emitting layer 383 preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material, which are a combination that easily forms an exciplex. With this structure, light emission can be efficiently obtained using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from an exciplex to a light-emitting substance (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smooth, allowing light emission to be obtained efficiently. With this structure, high efficiency, low-voltage operation, and a long lifetime of the light-emitting element can be simultaneously achieved.

[0398] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied molecular orbital level) of the hole transporting material is equal to or higher than the HOMO level of the electron transporting material. It is also preferable that the LUMO level (lowest unoccupied molecular orbital level) of the hole transporting material is equal to or higher than the LUMO level of the electron transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0399] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of the hole-transporting material, the electron-transporting material, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). That is, the formation of exciplexes can also be confirmed by comparing the transient EL of the hole-transporting material, the transient EL of the electron-transporting material, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0400] The active layer 373 includes a semiconductor. Examples of the semiconductor include an inorganic semiconductor such as silicon and an organic semiconductor including an organic compound. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 373 is shown. By using an organic semiconductor, the light-emitting layer 383 and the active layer 373 can be formed by the same method (for example, vacuum deposition), which is preferable because a common manufacturing device can be used.

[0401] The n-type semiconductor material of the active layer 373 is fullerene (e.g., C ６０ , C ７０ Examples of electron-accepting organic semiconductor materials include fullerene derivatives and the like. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties cause charge separation quickly and efficiently, making them useful as light-receiving elements. C ６０ , C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０ As compared with [6,6]-phenyl-C, [6,6]-phenyl-C is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region. ７１ -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C ６１ -butyric acid methyl ester (abbreviation: PC60BM), 1', 1'', 4', 4''-Tetrahydro-di [1, 4] methanonaphthaleno [1, 2: 2', 3', 56, 60: 2'', 3''] [5, 6] fullerene-C ６０ (abbreviation: ICBA) and others.

[0402] Furthermore, examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0403] An example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0404] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0405] Examples of the p-type semiconductor material of the active layer 373 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0406] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0407] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0408] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0409] For example, the active layer 373 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or alternatively, the active layer 373 may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0410] The light-emitting element and the light-receiving element can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting element and the light-receiving element can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0411] For example, the hole transport material or the electron blocking material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI). The electron transport material or the hole blocking material may be an inorganic compound such as zinc oxide (ZnO), or an organic compound such as polyethyleneimine ethoxylate (PEIE). The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0412] Furthermore, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c′]dithiophene-1,3-diyl]] polymer (abbreviation: PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used for the active layer 373. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0413] A display device 380B shown in FIG. 21B differs from the display device 380A in that a light receiving element 370PD and a light emitting element 370R have the same configuration.

[0414] The light receiving element 370PD and the light emitting element 370R have in common an active layer 373 and a light emitting layer 383R.

[0415] Here, it is preferable that the light receiving element 370PD has the same configuration as a light emitting element that emits light of a longer wavelength than the light to be detected. For example, the light receiving element 370PD configured to detect blue light can have the same configuration as one or both of the light emitting element 370R and the light emitting element 370G. For example, the light receiving element 370PD configured to detect green light can have the same configuration as the light emitting element 370R.

[0416] By using a common structure for the light-receiving element 370PD and the light-emitting element 370R, the number of film-forming steps and the number of masks can be reduced compared to a structure in which the light-receiving element 370PD and the light-emitting element 370R have separate layers, thereby reducing the manufacturing steps and manufacturing costs of the display device.

[0417] Furthermore, by using a common configuration for the light receiving element 370PD and the light emitting element 370R, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 370PD and the light emitting element 370R have separate layers. This allows the pixel aperture ratio to be increased, and the light extraction efficiency of the display device to be improved. This also allows the life of the light emitting element to be extended. Furthermore, the display device can display high brightness. Furthermore, it is possible to increase the resolution of the display device.

[0418] The light-emitting layer 383R includes a light-emitting material that emits red light. The active layer 373 includes an organic compound that absorbs light with a wavelength shorter than red (for example, one or both of green light and blue light). The active layer 373 preferably includes an organic compound that does not easily absorb red light and that absorbs light with a wavelength shorter than red. This allows the light-emitting element 370R to efficiently extract red light, and the light-receiving element 370PD to detect light with a wavelength shorter than red with high accuracy.

[0419] Furthermore, in the display device 380B, an example is shown in which the light emitting element 370R and the light receiving element 370PD have the same configuration, but the light emitting element 370R and the light receiving element 370PD may have optical adjustment layers of different thicknesses.

[0420] 22A and 22B includes a light receiving / emitting element 370SR that emits red (R) light and has a light receiving function, a light emitting element 370G, and a light emitting element 370B. The configurations of the light emitting element 370G and the light emitting element 370B can refer to the display device 380A described above.

[0421] The light emitting / receiving element 370SR has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, a light emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. The light emitting / receiving element 370SR has the same configuration as the light emitting element 370R and the light receiving element 370PD exemplified in the display device 380B.

[0422] 22A shows a case where the light emitting / receiving element 370SR functions as a light emitting element. In FIG. 22A, an example is shown in which the light emitting element 370B emits blue light, the light emitting element 370G emits green light, and the light emitting / receiving element 370SR emits red light.

[0423] 22B shows a case where the light receiving / emitting element 370SR functions as a light receiving element, in which the light receiving / emitting element 370SR receives blue light emitted by the light emitting element 370B and green light emitted by the light emitting element 370G.

[0424] The light emitting element 370B, the light emitting element 370G, and the light emitting / receiving element 370SR each have a pixel electrode 371 and a common electrode 375. In this embodiment, a case will be described in which the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode. The light emitting / receiving element 370SR is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, so that the light emitting / receiving element 370SR can detect light incident on the light emitting / receiving element 370SR, generate electric charges, and extract the charges as a current.

[0425] The light-emitting / receiving element 370SR can be said to have a configuration in which an active layer 373 is added to a light-emitting element. In other words, the light-emitting / receiving element 370SR can be formed in parallel with the formation of the light-emitting element by simply adding a step of forming the active layer 373 to the manufacturing process of the light-emitting element. Furthermore, the light-emitting element and the light-emitting / receiving element can be formed on the same substrate. Therefore, it is possible to impart one or both of an imaging function and a sensing function to the display unit without significantly increasing the number of manufacturing steps.

[0426] There are no limitations on the stacking order of the light-emitting layer 383R and the active layer 373. Figures 22A and 22B show an example in which the active layer 373 is provided on the hole-transport layer 382, ​​and the light-emitting layer 383R is provided on the active layer 373. The stacking order of the light-emitting layer 383R and the active layer 373 may be reversed.

[0427] Furthermore, the light emitting / receiving element may not have at least one layer selected from the hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385. Furthermore, the light emitting / receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0428] In the light emitting / receiving element, a conductive film that transmits visible light is used for the electrode on the light extraction side, and a conductive film that reflects visible light is preferably used for the electrode on the non-light extraction side.

[0429] The functions and materials of the layers constituting the light emitting / receiving element are similar to those of the layers constituting the light emitting element and the light receiving element, and therefore detailed description thereof will be omitted.

[0430] 22C to 22G show examples of the stacked structure of the light emitting and receiving element.

[0431] The light emitting / receiving element shown in FIG. 22C has a first electrode 377 , a hole injection layer 381 , a hole transport layer 382 , a light emitting layer 383R, an active layer 373 , an electron transport layer 384 , an electron injection layer 385 , and a second electrode 378 .

[0432] FIG. 22C shows an example in which a light-emitting layer 383R is provided on a hole-transporting layer 382, ​​and an active layer 373 is stacked on the light-emitting layer 383R.

[0433] As shown in Figures 22A to 22C and 22F, the active layer 373 and the light-emitting layer 383R may be in contact with each other.

[0434] A buffer layer is preferably provided between the active layer 373 and the light-emitting layer 383R. In this case, the buffer layer preferably has hole-transporting and electron-transporting properties. For example, a bipolar substance is preferably used for the buffer layer. Alternatively, at least one layer selected from a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, a hole-blocking layer, an electron-blocking layer, and the like can be used as the buffer layer. FIG. 22D shows an example in which a hole-transporting layer 382 is used as the buffer layer.

[0435] By providing a buffer layer between the active layer 373 and the light-emitting layer 383R, it is possible to suppress the transfer of excitation energy from the light-emitting layer 383R to the active layer 373. In addition, the buffer layer can also be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light-emitting / receiving element having a buffer layer between the active layer 373 and the light-emitting layer 383R can achieve high light-emitting efficiency.

[0436] 22E shows an example of a laminated structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and a light-emitting layer 383R are laminated in this order on a hole injection layer 381. The hole transport layer 382-2 functions as a buffer layer. The hole transport layer 382-1 and the hole transport layer 382-2 may contain the same material or different materials. Alternatively, a layer that can be used as the buffer layer described above may be used instead of the hole transport layer 382-2. The positions of the active layer 373 and the light-emitting layer 383R may be interchanged.

[0437] 22F differs from the light-emitting / receiving element shown in Fig. 22A in that it does not have the hole transport layer 382. In this way, the light-emitting / receiving element may not have at least one layer among the hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385. The light-emitting / receiving element may also have other functional layers such as a hole blocking layer and an electron blocking layer.

[0438] The light emitting / receiving device shown in FIG. 22G differs from the light emitting / receiving device shown in FIG. 22A in that it does not have an active layer 373 and a light emitting layer 383R, but has a layer 389 that serves as both a light emitting layer and an active layer.

[0439] As a layer that serves as both a light-emitting layer and an active layer, for example, a layer containing three materials: an n-type semiconductor that can be used for the active layer 373, a p-type semiconductor that can be used for the active layer 373, and a light-emitting substance that can be used for the light-emitting layer 383R can be used.

[0440] It is preferable that the lowest energy absorption band in the absorption spectrum of the mixed material of n-type and p-type semiconductors does not overlap with the maximum peak in the emission spectrum (PL spectrum) of the luminescent substance, and it is more preferable that they are sufficiently separated from each other.

[0441] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0442] Embodiment 5 In this embodiment, an example of a display device including a light-receiving device or the like according to one embodiment of the present invention will be described.

[0443] In the display device of this embodiment, a pixel may be configured to have multiple types of subpixels having light-emitting devices that emit different colors. For example, a pixel may be configured to have three types of subpixels. Examples of the three subpixels include subpixels of red (R), green (G), and blue (B), or subpixels of yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel may be configured to have four types of subpixels. Examples of the four subpixels include subpixels of R, G, B, and white (W), or subpixels of R, G, B, and Y.

[0444] The arrangement of the sub-pixels is not particularly limited, and various methods can be applied, such as a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0445] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. The top surface shape of the sub-pixel here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0446] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0447] The pixel shown in FIGS. 23A, 23B, and 23C includes subpixels G, B, R, and PS.

[0448] A stripe arrangement is applied to the pixels shown in Fig. 23A, and a matrix arrangement is applied to the pixels shown in Fig. 23B.

[0449] The pixel array shown in FIG. 23C has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel PS) are vertically arranged next to one subpixel (subpixel B).

[0450] The pixel shown in FIGS. 23D, 23E, and 23F has subpixels G, B, R, IR, and PS.

[0451] 23D, 23E, and 23F show examples in which one pixel is provided across two rows, with the upper row (first row) having three subpixels (subpixel G, subpixel B, and subpixel R), and the lower row (second row) having two subpixels (one subpixel PS and one subpixel IR).

[0452] In Fig. 23D, three vertically elongated subpixels G, B, and R are arranged horizontally, with a subpixel PS and a horizontally elongated subpixel IR arranged horizontally below them. In Fig. 23E, two horizontally elongated subpixels G and R are arranged vertically, with a vertically elongated subpixel B arranged horizontally next to them, and a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. In Fig. 23F, three vertically elongated subpixels R, G, and B are arranged horizontally, with a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. Figs. 23E and 23F show the case where the area of ​​the subpixel IR is the largest and the area of ​​the subpixel PS is approximately the same as that of the subpixels R, G, and B.

[0453] The layout of the sub-pixels is not limited to the configurations shown in FIGS. 23A to 23F.

[0454] Subpixel R has a light-emitting device that emits red light. Subpixel G has a light-emitting device that emits green light. Subpixel B has a light-emitting device that emits blue light. Subpixel IR has a light-emitting device that emits infrared light. Subpixel PS has a light-receiving device. There are no particular limitations on the wavelength of light detected by subpixel PS, but it is preferable that the light-receiving device of subpixel PS is sensitive to light emitted by the light-emitting device of subpixel R, subpixel G, subpixel B, or subpixel IR. For example, it is preferable to detect one or more of light in wavelength ranges such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red, and light in the infrared wavelength range.

[0455] The light-receiving area of ​​the subpixel PS is smaller than the light-emitting area of ​​the other subpixels. The smaller the light-receiving area, the narrower the imaging range, which makes it possible to suppress blurring in the imaging result and improve resolution. Therefore, by using the subpixel PS, high-definition or high-resolution imaging can be performed. For example, the subpixel PS can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and arterial shapes), faces, etc.

[0456] The subpixel PS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). For example, the subpixel PS preferably detects infrared light, which enables touch detection even in dark places.

[0457] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not touch the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm, is preferable. This configuration enables the display device to be operated without the object directly touching the display device, in other words, it enables the display device to be operated in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or enables the display device to be operated without the object directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0458] In order to capture high-resolution images, it is preferable that the sub-pixels PS be provided in all pixels of the display device. On the other hand, when used in a touch sensor or near-touch sensor, the sub-pixels PS do not require high accuracy compared to when capturing images of fingerprints, etc., so they may be provided in only some of the pixels of the display device. By making the number of sub-pixels PS in the display device smaller than the number of sub-pixels R, etc., the detection speed can be increased.

[0459] FIG. 23G shows an example of a pixel circuit of a sub-pixel having a light-receiving device, and FIG. 23H shows an example of a pixel circuit of a sub-pixel having a light-emitting device.

[0460] 23G includes a light receiving device PD, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitance element C2. Here, an example is shown in which a photodiode is used as the light receiving device PD.

[0461] The light-receiving device PD has an anode electrically connected to the wiring V1 and a cathode electrically connected to one of the source and drain of the transistor M11. The transistor M11 has a gate electrically connected to the wiring TX and the other of the source and drain electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13. The transistor M12 has a gate electrically connected to the wiring RES and the other of the source and drain electrically connected to the wiring V2. The transistor M13 has one of the source and drain electrically connected to the wiring V3 and the other of the source and drain electrically connected to one of the source and drain of the transistor M14. The transistor M14 has a gate electrically connected to the wiring SE and the other of the source and drain electrically connected to the wiring OUT1.

[0462] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When the light-receiving device PD is driven with a reverse bias, a potential higher than the potential of the wiring V1 is supplied to the wiring V2. The transistor M12 is controlled by a signal supplied to the wiring RES and has a function of resetting the potential of a node connected to the gate of the transistor M13 to the potential supplied to the wiring V2. The transistor M11 is controlled by a signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the node changes depending on the current flowing through the light-receiving device PD. The transistor M13 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M14 is controlled by a signal supplied to the wiring SE and functions as a selection transistor that reads out an output according to the potential of the node to an external circuit connected to the wiring OUT1.

[0463] 23H includes a light-emitting device EL, transistors M15, M16, and M17, and a capacitance element C3. Here, an example is shown in which a light-emitting diode is used as the light-emitting device EL. It is particularly preferable to use an organic EL element as the light-emitting device EL.

[0464] The transistor M15 has a gate electrically connected to a wiring VG, one of its source or drain electrically connected to a wiring VS, and the other of its source or drain electrically connected to one electrode of a capacitor C3 and the gate of a transistor M16. One of the source or drain of the transistor M16 is electrically connected to a wiring V4, and the other is electrically connected to an anode of a light-emitting device EL and one of the source or drain of a transistor M17. The transistor M17 has a gate electrically connected to a wiring MS, and the other of its source or drain electrically connected to a wiring OUT2. The cathode of the light-emitting device EL is electrically connected to a wiring V5.

[0465] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light-emitting device EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M15 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M16 also functions as a drive transistor that controls the current flowing through the light-emitting device EL depending on the potential supplied to its gate. When the transistor M15 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission brightness of the light-emitting device EL can be controlled depending on the potential. The transistor M17 is controlled by a signal supplied to the wiring MS and has the function of outputting the potential between the transistor M16 and the light-emitting device EL to the outside via the wiring OUT2.

[0466] Here, it is preferable to use transistors that use a metal oxide (oxide semiconductor) in a semiconductor layer in which a channel is formed for the transistors M11, M12, M13, and M14 included in the pixel circuit PIX1, and the transistors M15, M16, and M17 included in the pixel circuit PIX2.

[0467] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use a transistor including an oxide semiconductor for the transistor M11, the transistor M12, and the transistor M15, which are connected in series with the capacitor C2 or the capacitor C3. Furthermore, by using a transistor including an oxide semiconductor for other transistors as well, manufacturing costs can be reduced.

[0468] For example, the off-state current of an OS transistor per 1 μm channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0469] Alternatively, the transistors M11 to M17 may be transistors in which silicon is used as a semiconductor in which a channel is formed. In particular, using silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and higher-speed operation is possible.

[0470] Alternatively, a structure may be used in which one or more of the transistors M11 to M17 include an oxide semiconductor and the remaining transistors include silicon.

[0471] Although the transistors are shown as n-channel transistors in FIGS. 23G and 23H, p-channel transistors can also be used.

[0472] The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one region.

[0473] It is also preferable to provide one or more layers including one or both of a transistor and a capacitor at a position overlapping the light receiving device PD or the light emitting device EL, thereby reducing the effective area occupied by each pixel circuit and realizing a high-definition light receiving section or display section.

[0474] To increase the light emission luminance of the light-emitting device EL included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device EL. To achieve this, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain breakdown voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device EL and increase the light emission luminance of the light-emitting device EL.

[0475] Furthermore, when a transistor operates in the saturation region, an OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, and the amount of current flowing through the light-emitting device can be controlled. This allows for a larger gradation in the pixel circuit.

[0476] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, for example, even when the current-voltage characteristics of a light-emitting device containing an EL material vary. In other words, when an OS transistor operates in a saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0477] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0478] Furthermore, the display device of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 0.01 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, driving that reduces the power consumption of the display device by driving it at a reduced refresh rate may be called idling stop (IDS) driving.

[0479] The drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor may be set to a frequency higher than 120 Hz (typically, 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0480] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0481] Embodiment 6 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0482] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can easily achieve high definition, high resolution, and a large size. Therefore, the display device of one embodiment of the present invention can be used as a display portion of various electronic devices.

[0483] Furthermore, the display device of one embodiment of the present invention can be manufactured at low cost, which leads to a reduction in the manufacturing cost of electronic devices.

[0484] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines (e.g., pachinko machines), as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0485] In particular, the display device of one embodiment of the present invention can have high resolution and thus can be suitably used in electronic devices having a relatively small display portion. Examples of such electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, head-mounted wearable devices such as virtual reality (VR) devices and glasses-type augmented reality (AR) devices. Examples of wearable devices include devices for substitutive reality (SR) and mixed reality (MR).

[0486] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K2K (3840 × 2160 pixels), or 8K4K (7680 × 4320 pixels). A resolution of 4K2K, 8K4K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device with such high resolution or high definition, it is possible to further enhance the sense of presence and depth.

[0487] The electronic device of this embodiment can be incorporated along the curved surface of the inner or outer wall of a house or building, or the interior or exterior of an automobile.

[0488] The electronic device of this embodiment may have an antenna. By receiving a signal through the antenna, images, information, and the like can be displayed on a display portion. In addition, when the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0489] The electronic device of this embodiment may have a sensor (including the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0490] The electronic device of the present embodiment can have various functions, such as a function of displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, time, etc., a function of executing various software (programs), a wireless communication function, a function of reading out programs or data recorded on a recording medium, etc.

[0491] The electronic device 6500 shown in FIG. 24A is a portable information terminal that can be used as a smartphone.

[0492] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0493] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0494] FIG. 24B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0495] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0496] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0497] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0498] The flexible display device of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and a large-capacity battery 6518 can be mounted thereon. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the display portion 6502, an electronic device with a narrow frame can be realized.

[0499] 25A shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0500] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0501] 25A can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0502] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0503] 25B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The housing 7211 includes a display portion 7000.

[0504] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0505] 25C and 25D show an example of digital signage.

[0506] 25C includes a housing 7301, a display portion 7000, a speaker 7303, and the like. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0507] 25D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0508] 25C and 25D, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0509] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0510] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0511] 25C and 25D , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0512] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0513] FIG. 26A is a diagram showing the appearance of the camera 8000 with the viewfinder 8100 attached.

[0514] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, and the like. A detachable lens 8006 is attached to the camera 8000. Note that the lens 8006 and the housing 8001 of the camera 8000 may be integrated together.

[0515] The camera 8000 can capture an image by pressing a shutter button 8004 or touching a display portion 8002 that functions as a touch panel.

[0516] The housing 8001 has a mount with electrodes, and can be connected to a finder 8100 as well as a strobe device and the like.

[0517] The finder 8100 includes a housing 8101, a display portion 8102, a button 8103, and the like.

[0518] The housing 8101 is attached to the camera 8000 by a mount that engages with the mount of the camera 8000. The viewfinder 8100 can display an image received from the camera 8000 on a display portion 8102.

[0519] The button 8103 has a function as a power button or the like.

[0520] The display device of one embodiment of the present invention can be applied to a display portion 8002 of a camera 8000 and a display portion 8102 of a finder 8100. Note that the camera 8000 may have a built-in finder.

[0521] FIG. 26B is a diagram showing the appearance of the head-mounted display 8200.

[0522] The head-mounted display 8200 includes a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, and a cable 8205. The mounting portion 8201 has a built-in battery 8206.

[0523] A cable 8205 supplies power from a battery 8206 to the main body 8203. The main body 8203 includes a wireless receiver or the like and can display received video information on a display portion 8204. The main body 8203 also includes a camera and can use information on the movement of the user's eyeballs or eyelids as an input means.

[0524] The wearing unit 8201 may have a function of recognizing the line of sight by providing a plurality of electrodes at positions that come into contact with the user and capable of detecting a current that flows in accordance with the movement of the user's eyeballs. The wearing unit 8201 may also have a function of monitoring the user's pulse based on the current that flows through the electrodes. The wearing unit 8201 may also have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may also have a function of displaying biometric information of the user on the display unit 8204 and a function of changing an image displayed on the display unit 8204 in accordance with the movement of the user's head.

[0525] The display device of one embodiment of the present invention can be applied to the display portion 8204 .

[0526] 26C to 26E are diagrams showing the appearance of a head mounted display 8300. The head mounted display 8300 includes a housing 8301, a display portion 8302, a band-shaped fixture 8304, and a pair of lenses 8305.

[0527] A user can view the display on the display portion 8302 through the lens 8305. Note that it is preferable to arrange the display portion 8302 in a curved manner because the user can feel a high sense of presence. In addition, by viewing different images displayed in different regions of the display portion 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the present invention is not limited to a configuration in which one display portion 8302 is provided, and two display portions 8302 may be provided, with one display portion 8302 being provided for each eye of the user.

[0528] The display device of one embodiment of the present invention can be applied to the display portion 8302. The display device of one embodiment of the present invention can also achieve extremely high definition. For example, as shown in FIG. 26E , even when the display is enlarged and viewed using the lens 8305, the pixels are difficult for the user to view. That is, the display portion 8302 can be used to allow the user to view a highly realistic image.

[0529] 26F is a diagram showing the appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 includes a pair of housings 8401, an attachment portion 8402, and a cushioning member 8403. A display portion 8404 and a lens 8405 are provided in each of the pair of housings 8401. By displaying different images on the pair of display portions 8404, three-dimensional display using parallax can be performed.

[0530] A user can view the display portion 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism, and the position of the lens 8405 can be adjusted according to the user's eyesight. The display portion 8404 is preferably a square or a horizontally long rectangle. This can enhance the sense of realism.

[0531] The display device of one embodiment of the present invention can be applied to the display portion 8404 .

[0532] The attachment portion 8402 preferably has plasticity and elasticity so that it can be adjusted according to the size of the user's face and does not slip off. Furthermore, a portion of the attachment portion 8402 preferably has a vibration mechanism that functions as a bone conduction earphone. This allows the user to enjoy video and audio simply by wearing the device, without the need for separate audio equipment such as earphones or speakers. The housing 8401 may also have a function for outputting audio data via wireless communication.

[0533] The mounting portion 8402 and the buffer member 8403 are portions that come into contact with the user's face (forehead, cheeks, etc.). The close contact of the buffer member 8403 with the user's face can prevent light leakage and enhance the sense of immersion. The buffer member 8403 is preferably made of a soft material so that it can be in close contact with the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, using a sponge or the like with its surface covered with cloth, leather (natural leather or synthetic leather), or the like can prevent gaps from forming between the user's face and the buffer member 8403, thereby favorably preventing light leakage. Furthermore, using such a material is preferable because it feels pleasant to the touch and prevents the user from feeling cold when worn in cold seasons. It is preferable that components that come into contact with the user's skin, such as the buffer member 8403 or the mounting portion 8402, be removable for easy cleaning or replacement.

[0534] The electronic device shown in Figures 27A to 27F has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to sense, detect, or measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, etc.

[0535] The electronic devices shown in Figures 27A to 27F have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0536] The display device of one embodiment of the present invention can be applied to the display portion 9001 .

[0537] The electronic devices shown in FIGS. 27A to 27F will be described in detail below.

[0538] FIG. 27A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 27A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and the strength of antenna reception. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0539] 27B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0540] FIG. 27C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and a display can be displayed along the curved display surface. The mobile information terminal 9200 can also communicate hands-free by intercommunicating with, for example, a wirelessly capable headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Charging may be performed by wireless power supply.

[0541] 27D to 27F are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 27D is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 27F is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 27E is a perspective view of a state in the process of changing from one of FIGS. 27D and 27F to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0542] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0543] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0544] 100: display device, 101: substrate, 110B: light-emitting element, 110G: light-emitting element, 110R: light-emitting element, 110S: light-receiving element, 110W: light-emitting element, 110: light-emitting element, 111B: pixel electrode, 111C: connection electrode, 111G: pixel electrode, 111R: pixel electrode, 111S: pixel electrode, 111W: pixel electrode, 111: pixel electrode, 112B: organic layer, 112G: organic layer, 112R: organic layer, 112W: organic layer, 112: organic layer, 113: common electrode, 114: common layer, 121: protective layer, 123a: light-shielding film, 123b: light-shielding film, 123: light-shielding layer, 125: insulating layer, 12 6: resin layer, 128: layer, 131: insulating layer, 136: mask, 137: mask, 140: connecting portion, 155: organic layer, 170: substrate, 171: adhesive layer, 172: light-shielding layer, 173: lens, 174B: colored layer, 174G: colored layer, 174R: colored layer, 174: colored layer, 175: lens, 180: light, 190a: resist mask, 190b: resist mask, 191a: resist mask, 191b: resist mask, 200A: display panel, 200B: display panel, 200: display panel, 201: substrate, 202: substrate, 203: functional layer, 211B: light-emitting element, 21 1G: light-emitting element, 211IR: light-emitting element, 211R: light-emitting element, 211W: light-emitting element, 211X: light-emitting element, 211: light-emitting element, 212: light-receiving element, 213R: light-receiving element, 220: finger, 221: contact portion, 222: fingerprint, 223: imaging range, 225: stylus, 226: trajectory, 252: transistor, 254: connection portion, 258: transistor, 259: transistor, 260: transistor, 261: insulating layer, 262: insulating layer, 265: insulating layer, 268: insulating layer, 271: conductive layer, 272a: conductive layer, 272b: conductive layer, 273: conductive layer, 275: insulating layer , 278: connecting portion, 281i: channel formation region, 281n: low resistance region, 281: semiconductor layer, 292: connecting layer, 294: insulating layer, 370B: light emitting element, 370G: light emitting element, 370PD: light receiving element, 370R: light emitting element, 370SR: light receiving / emitting element, 371: pixel electrode, 373: active layer, 375: common electrode, 377: first electrode, 378: second electrode, 380A: display device, 380B: display device, 380C: display device, 381: hole injection layer, 382: hole transport layer, 382-1: hole transport layer, 382-2: hole transport layer, 383B: light emitting layer, 383G: light emitting layer,383R: light-emitting layer, 383: light-emitting layer, 384: electron transport layer, 385: electron injection layer, 389: layer, 400: display device, 411a: conductive layer, 411b: conductive layer, 411c: conductive layer, 412G: organic layer, 412S: organic layer, 413: common electrode, 414: common layer, 416: protective layer, 417: light-shielding layer, 419: light-shielding layer, 421: insulating layer, 422: resin layer, 430b: light-emitting element, 440: light-receiving element, 442: adhesive layer, 451: substrate, 452: substrate, 455: adhesive layer, 462: display unit, 464: circuit, 465: wiring, 466: conductive layer, 472: FPC, 473: IC, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Housing Body, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: digital signage, 7401: pillar, 7411: information terminal, 8000: camera, 8001: housing, 8002: display unit, 8003: operation buttons, 8004: shutter button, 8006: lens, 8100: viewfinder, 8101: housing, 8102: display unit, 8103: button, 8200: head-mounted display, 8201: wearing part, 82 02: Lens, 8203: Main body, 8204: Display unit, 8205: Cable, 8206: Battery, 8300: Head mounted display, 8301: Housing, 8302: Display unit, 8304: Fixing device, 8305: Lens, 8400: Head mounted display, 8401: Housing, 8402: Mounting part, 8403: Cushioning member, 8404: Display unit, 8405: Lens, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information,9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. a first substrate, a second substrate facing the first substrate, a light-emitting element on the first substrate, a light-receiving element adjacent to the light-emitting element, a first light-shielding layer on the first substrate, a second light-shielding layer on a surface of the second substrate facing the first substrate, and a third light-shielding layer on a surface of the second light-shielding layer facing the first substrate; the first to third light-shielding layers are provided between the light-emitting element and the light-receiving element, respectively, in a plan view; a gap is formed between the first light-shielding layer and the third light-shielding layer in the plan view; Display device.

2. In claim 1, the first light-shielding layer, the second light-shielding layer, and the third light-shielding layer each contain a material that absorbs a portion of visible light; Display device.

3. In claim 1 or claim 2, the number of the third light-shielding layers is two or more; Display device.

4. In any one of claims 1 and 2, the number of the first light-shielding layers is two or more; Display device.

5. In any one of claims 1 and 2, an insulating layer is provided between the light-emitting element and the light-receiving element; the first light-shielding layer is provided on the insulating layer; Display device.

6. In claim 5, The insulating layer is a resin layer. Display device.

7. In any one of claims 1 and 2, the light-emitting element includes a light-emitting material; the light receiving element includes a photoelectric conversion material; Display device.

8. In any one of claims 1 and 2, It has a colored layer, The light-emitting element has two or more light-emitting layers. Display device.

9. In any one of claims 1 and 2, A first lens is provided on the light-emitting element. Display device.

10. In any one of claims 1 and 2, a second lens is provided on the light receiving element; Display device.

11. In any one of claims 1 and 2, a first lens is provided on the light-emitting element; a second lens is provided on the light receiving element; Display device.

12. In claim 11, the first and second lenses are convex lenses having a convex shape on a side facing the second substrate; Display device.

13. In claim 11, The first and second lenses are lenses having a substantially trapezoidal cross section. Display device.

14. In claim 11, a third lens facing the first and second lenses is provided on the second substrate; Display device.

15. In claim 14, the third lens is a convex lens having a convex shape on a side facing the first substrate; Display device.

16. In claim 14, The third lens is a lens having a substantially trapezoidal cross section. Display device.