Display device

Abstract

Provided is a display device that has an imaging function. The present invention reduces noise during imaging. This display device has a first pixel electrode, a second pixel electrode, a first organic layer, a second organic layer, a common electrode, a spacer, a protective layer, and a light shielding layer. The first organic layer is provided above the first pixel electrode. The second organic layer is provided above the second pixel electrode. The common electrode has a portion overlapping the first pixel electrode with the first organic layer interposed therebetween, and a portion overlapping the second pixel electrode with the second organic layer interposed therebetween. The protective layer is provided so as to cover the common electrode. The spacer has a portion that is transparent with respect to visible light and overlaps the first pixel electrode, with the protective layer, the common electrode, and the first organic layer therebetween. The light shielding layer is provided above the spacer and has an opening that overlaps the second pixel electrode. The first organic layer includes a photoelectric conversion layer, and the second organic layer includes a light emitting layer.

Description

display device

[0001] FIELD OF THE INVENTION One aspect of the present invention relates to a display device, an imaging device, and a display device having an imaging function.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, and manufacturing methods thereof. A semiconductor device refers to any device that can function by utilizing semiconductor characteristics.

[0003] In recent years, display devices have been required to have higher definition in order to display high-resolution images. Furthermore, in information terminal devices such as smartphones, tablet terminals, and notebook PCs (personal computers), display devices are required to have not only high definition but also low power consumption. Furthermore, display devices that not only display images but also have various additional functions, such as a touch panel function or a function for capturing fingerprints for authentication, are in demand.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting elements (also referred to as EL elements) utilizing the electroluminescence (EL) phenomenon have features such as being easily thin and lightweight, being capable of responding quickly to input signals, and being capable of being driven using a DC constant voltage power supply, and are therefore applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device using an organic EL element.

[0005] JP 2014-197522 A

[0006] An object of one embodiment of the present invention is to provide a display device having an imaging function. Another object is to provide a high-resolution imaging device or display device. Another object is to reduce noise during imaging. Another object is to provide an imaging device or display device that can perform high-sensitivity imaging. Another object is to provide a display device or imaging device with a high aperture ratio. Another object is to provide a display device that can acquire biometric information such as a fingerprint. Another object is to provide a display device that functions as a touch panel.

[0007] An object of one embodiment of the present invention is to provide a highly reliable display device, imaging device, or electronic device.An object of one embodiment of the present invention is to provide a display device, imaging device, electronic device, or the like having a novel structure.An object of one embodiment of the present invention is to alleviate at least one of the problems of the prior art.

[0008] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these can be extracted from the description of the specification, drawings, claims, etc.

[0009] One embodiment of the present invention is a display device including a first pixel electrode, a second pixel electrode, a first organic layer, a second organic layer, a common electrode, a spacer, a protective layer, and a light-shielding layer. The first organic layer is provided over the first pixel electrode. The second organic layer is provided over the second pixel electrode. The common electrode has a portion overlapping with the first pixel electrode through the first organic layer and a portion overlapping with the second pixel electrode through the second organic layer. The protective layer is provided to cover the common electrode. The spacer is transparent to visible light and has a portion overlapping with the first pixel electrode through the protective layer, the common electrode, and the first organic layer. The light-shielding layer is provided on the spacer and has an opening overlapping with the second pixel electrode. The first organic layer includes a photoelectric conversion layer, and the second organic layer includes a light-emitting layer.

[0010] In the above, the spacer preferably has an island-shaped upper surface, and the light-shielding layer is preferably provided so as to cover part of the upper surface and the side surfaces of the spacer.

[0011] In any of the above, it is preferable that the opening in the light-shielding layer is located inside the outline of the first pixel electrode and inside the outline of the first organic layer in plan view.

[0012] In any of the above, it is preferable that the pixel electrode further includes a lens. The lens is preferably provided on the spacer at a position overlapping the first pixel electrode. Furthermore, it is preferable that the lens overlaps the opening in the light-shielding layer, and the light-shielding layer covers an edge of the lens.

[0013] In any of the above, the spacer preferably has a function of transmitting light of the first color and absorbing light of the second color, and the light-shielding layer preferably has a function of absorbing light of the first color and transmitting light of the second color.

[0014] In the above, it is preferable that the light-shielding layer has a portion overlapping with the second organic layer, and the second organic layer has a function of emitting light containing light of the second color.

[0015] In the above, the second organic layer preferably has a function of emitting white light.

[0016] In any of the above, it is preferable that the pixel electrode further includes a first insulating layer. The first insulating layer is preferably provided so as to cover an end portion of the first pixel electrode and an end portion of the second pixel electrode. Furthermore, it is preferable that the first organic layer and the second organic layer each have a portion located on the first insulating layer.

[0017] In any of the above, the first side surface of the first organic layer and the second side surface of the second organic layer are preferably disposed opposite each other. The first organic layer preferably has a portion where the angle between the first side surface and the bottom surface is 45 degrees or more and 100 degrees or less. The second organic layer preferably has a portion where the angle between the second side surface and the bottom surface is 45 degrees or more and 100 degrees or less.

[0018] In the above, it is preferable that the semiconductor device further includes a second insulating layer. The second insulating layer has a portion in contact with the first side surface and a portion in contact with the second side surface. It is also preferable that the second insulating layer includes an inorganic insulating film.

[0019] In the above, it is preferable that the substrate further includes a resin layer. The resin layer preferably has a portion overlapping the first organic layer via the second insulating layer and a portion overlapping the second organic layer via the second insulating layer. Furthermore, it is preferable that the common electrode has a portion located on the resin layer. In this case, it is preferable that the spacer has a portion located on the resin layer.

[0020] According to one embodiment of the present invention, a display device having an imaging function can be provided. Alternatively, a high-resolution imaging device or display device can be provided. Alternatively, noise during imaging can be reduced. Alternatively, a display device or imaging device with a high aperture ratio can be provided. Alternatively, an imaging device or display device capable of performing high-sensitivity imaging can be provided. Alternatively, a display device capable of acquiring biometric information such as a fingerprint can be provided. Alternatively, a display device functioning as a touch panel can be provided.

[0021] According to one embodiment of the present invention, it is possible to provide a highly reliable display device, an imaging device, or an electronic device. Alternatively, it is possible to provide a display device, an imaging device, an electronic device, or the like having a novel configuration. Alternatively, it is possible to alleviate at least one of the problems of the prior art.

[0022] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0023] FIGS. 1A and 1B are diagrams showing an example of the configuration of a display device. FIGS. 2A and 2B are diagrams showing an example of the configuration of a display device. FIGS. 3A and 3B are diagrams showing an example of the configuration of a display device. FIGS. 4A and 4B are diagrams showing an example of the configuration of a display device. FIGS. 5A and 5B are diagrams showing an example of the configuration of a display device. FIGS. 6A and 6B are diagrams showing an example of the configuration of a display device. FIGS. 7A and 7B are diagrams showing an example of the configuration of a display device. FIGS. 8A to 8C are diagrams showing an example of the configuration of a display device. FIGS. 9A to 9C are diagrams showing an example of the configuration of a display device. FIGS. 10A and 10B are diagrams showing an example of the configuration of a display device. FIGS. 11A to 11C are diagrams showing an example of the configuration of a display device. FIGS. 12A and 12B are diagrams showing an example of the configuration of a display device. FIG. 13 is a diagram showing an example of the configuration of a display device. FIG. 14A is a diagram showing an example of the configuration of a display device. FIG. 14B is a diagram showing an example of the configuration of a transistor. FIGS. 15A, 15B, and 15D are cross-sectional views showing examples of display devices. FIGS. 15C and 15E are diagrams showing example images. FIGS. 15F to 15H are top views showing examples of pixels. FIG. 16A is a cross-sectional view showing a configuration example of a display device. FIGS. 16B to 16D are top views showing examples of pixels. FIG. 17A is a cross-sectional view showing a configuration example of a display device. FIGS. 17B to 17I are top views showing examples of pixels. FIGS. 18A and 18B are views showing a configuration example of a display device. FIGS. 19A to 19G are views showing a configuration example of a display device. FIGS. 20A to 20C are views showing a configuration example of a display device. FIGS. 21A to 21F are views showing examples of pixels. FIGS. 21G and 21H are views showing example circuit diagrams of pixels. FIGS. 22A and 22B are views showing examples of electronic devices. FIGS. 23A to 23D are views showing examples of electronic devices. FIGS. 24A to 24F are views showing examples of electronic devices. FIGS. 25A to 25F are views showing examples of electronic devices.

[0024] Hereinafter, embodiments will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways and that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the following description of the embodiments.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0026] In the drawings described in this specification, the size of each component, the thickness of a layer, or an area may be exaggerated for clarity, and therefore, the drawings are not necessarily limited to the scale.

[0027] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components and do not limit the number.

[0028] Furthermore, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" and "insulating layer" may be interchangeable with the terms "conductive film" and "insulating film."

[0029] In this specification, the top surface shape of a certain component refers to the contour shape of the component in a plan view. The plan view refers to a view from the normal direction of the surface on which the component is formed or the surface of a support (e.g., a substrate) on which the component is formed.

[0030] In this specification, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer), or a stack including a light-emitting layer.

[0031] In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) an image or the like on a display surface, and therefore the display panel is one aspect of an output device.

[0032] In addition, in this specification, a display panel having a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package) attached to the substrate, or a display panel having an IC mounted on the substrate using a COG (Chip On Glass) method or the like, may be referred to as a display panel module, a display module, or simply a display panel.

[0033] Embodiment 1 In this embodiment, a structural example of a display device according to one embodiment of the present invention and an example of a manufacturing method of the display device will be described.

[0034] One embodiment of the present invention is a display device including a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device). The light-emitting element has a pair of electrodes and an EL layer therebetween. The light-receiving element has a pair of electrodes and an active layer therebetween. The light-emitting element is preferably an organic EL element (organic electroluminescent element). The light-receiving element is preferably an organic photodiode (organic photoelectric conversion element).

[0035] Furthermore, the display device preferably has two or more light-emitting elements that emit different light colors. The light-emitting elements that emit different light colors have EL layers containing different materials. For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0036] One embodiment of the present invention functions as an imaging device because it can capture an image using a plurality of light-receiving elements. In this case, the light-emitting elements can be used as a light source for capturing an image. Another embodiment of the present invention functions as a display device because it can display an image using a plurality of light-emitting elements. Therefore, one embodiment of the present invention can be said to be a display device having an imaging function or an imaging device having a display function.

[0037] For example, in a display device according to one embodiment of the present invention, light-emitting elements are arranged in a matrix in the display portion, and light-receiving elements are also arranged in a matrix in the display portion. Therefore, the display portion has a function of displaying an image and a function as a light-receiving portion. Since images can be captured by the light-receiving elements provided in the display portion, the display device can function as an image sensor, a touch panel, or the like. That is, the display portion can capture an image or detect the approach or contact of an object. Furthermore, since the light-emitting elements provided in the display portion can be used as a light source for receiving light, there is no need to provide a light source separately from the display device, and a highly functional display device can be realized without increasing the number of electronic components.

[0038] In one embodiment of the present invention, when light emitted from a light-emitting element included in a display portion is reflected by an object, a light-receiving element can detect the reflected light; therefore, imaging or touch (including non-contact) detection can be performed even in a dark environment.

[0039] Furthermore, the display device of one embodiment of the present invention can capture an image of a fingerprint or palm print when a finger, palm, or the like is placed in contact with the display unit. Therefore, an electronic device including the display device of one embodiment of the present invention can perform personal authentication using an image of the captured fingerprint, palm print, or the like. This eliminates the need for a separate imaging device for fingerprint authentication or palm print authentication, thereby reducing the number of components in the electronic device. Furthermore, since the light receiving elements are arranged in a matrix on the display unit, an image of a fingerprint, palm print, or the like can be captured anywhere on the display unit, thereby realizing an electronic device with excellent convenience.

[0040] Another biometric authentication method is facial recognition. However, with facial recognition, the accuracy of authentication can vary depending on the situation, such as when wearing a mask. On the other hand, authentication methods using fingerprints, palm prints, or veins have almost no difference in authentication accuracy depending on the measurement environment, so they can be said to be more accurate authentication methods.

[0041] When capturing an image of a fingerprint or the like using a light receiving element, the light emitted from a light emitting element of a display unit can be used as a light source. In this case, it is preferable to cause the light emitting element to emit light instantaneously (for example, for 100 μs or more and 100 ms or less). By shortening the light emission time, degradation of the light emitting element can be suppressed even when the light is emitted at high brightness. Furthermore, by capturing an image using instantaneous, high-brightness light emission, an image with enhanced contrast (shadows) can be obtained, allowing for clearer capture of the uneven shape of a fingerprint or the like.

[0042] It is preferable to provide a light-shielding layer on the light-receiving surface side of the light-receiving element, which defines the range (imaging range) of light incident on the light-receiving element. The narrower the imaging range of the light-receiving element, the clearer the image can be. This functions as a pinhole to prevent light from entering the light-receiving element from an oblique direction and to clarify the image. For example, the light-shielding layer can be a light-shielding thin film with an opening at a position overlapping the light-receiving element.

[0043] Furthermore, when the aperture diameter of the light-shielding layer is the same, the greater the distance between the light-receiving surface of the light-receiving element and the light-shielding layer, the narrower the imaging range and the clearer the image can be captured. Therefore, a light-transmitting spacer (also called a light-transmitting layer) is placed between the light-receiving element and the light-shielding layer. The spacer is stacked on the light-receiving element via a barrier layer. The thicker the spacer, the greater the distance between the light-shielding layer and the light-receiving element, and the clearer the image can be captured.

[0044] Furthermore, it is preferable that the spacers located above the light-receiving elements are formed in an island-shaped pattern, and that a light-shielding layer is further provided to cover a portion of the top surface and side surfaces of the spacers. By providing the light-shielding layer along the side surfaces of the spacers, the light-receiving surface of the light-receiving elements can be configured to be surrounded by the light-shielding layer. Therefore, the light-shielding layer blocks the path of light emitted from the light-emitting elements and diffusing inside the display device (also known as stray light), thereby preventing the stray light from entering the light-receiving elements. Since the stray light is a cause of noise when capturing images using the light-receiving elements, a configuration that blocks the stray light can improve the imaging sensitivity (signal-to-noise ratio (S / N ratio)).

[0045] A display device can also be formed by combining a white light-emitting element with a color filter. In this case, light-emitting elements provided in pixels (sub-pixels) that emit light of different colors can have the same configuration. In this way, the EL layer of all the light-emitting elements can be formed in common, which simplifies the manufacturing process.

[0046] A more specific example will be described below with reference to the drawings.

[0047] [Configuration Example 1] [Configuration Example 1-1] Fig. 1A shows a schematic top view of a display device 100. The display device has a plurality of light-emitting elements 110R that exhibit red, light-emitting elements 110G that exhibit green, light-emitting elements 110B that exhibit blue, and light-receiving elements 110S. In Fig. 1A, in order to easily distinguish between the light-emitting elements and the light-receiving elements, the light-emitting regions of the light-emitting elements and the light-receiving regions of the light-receiving elements are labeled with R, G, B, or S.

[0048] The light-emitting elements 110R, 110G, 110B, and the light-receiving elements 110S are arranged in a matrix. Fig. 1A shows a configuration in which two elements are alternately arranged in one direction. The arrangement of the light-emitting elements and the light-receiving elements is not limited to this, and other arrangements such as a stripe arrangement, an S-stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may also be used. Alternatively, a pentile arrangement, a diamond arrangement, or the like may also be used.

[0049] 1A also shows an example in which the light-emitting elements and the light-receiving elements are arranged at the same period. That is, FIG. 1A shows an example in which the resolution (density) of the light-emitting elements and the resolution (density) of the light-receiving elements are the same. Note that the arrangement period of the light-emitting elements and the arrangement period of the light-receiving elements may be different. For example, the arrangement period of the light-emitting elements may be shorter than the arrangement period of the light-receiving elements, or conversely, the arrangement period of the light-emitting elements may be longer than the arrangement period of the light-receiving elements.

[0050] As the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, it is preferable to use an EL element such as an organic light-emitting diode (OLED) or a quantum-dot light-emitting diode (QLED). Examples of light-emitting materials included in the EL elements include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (such as quantum dot materials).

[0051] The light receiving element 110S can be, for example, a pn-type or pin-type photodiode. The light receiving element 110S functions as a photoelectric conversion element that detects light incident on the light receiving element 110S and generates an electric charge. The amount of electric charge generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light receiving element 110S. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0052] Fig. 1B shows a schematic cross-sectional view corresponding to the dashed dotted line A1-A2 in Fig. 1A. Fig. 1B shows a schematic cross-sectional view of the light-emitting element 110R, the light-receiving element 110S, and the light-emitting element 110G.

[0053] The light emitting element 110R, the light emitting element 110G, the light emitting element 110B (not shown), and the light receiving element 110S are provided on a substrate 101. In addition, an adhesive layer 171 and a substrate 170 are provided to cover the light emitting element 110R, the light emitting element 110G, the light emitting element 110B, and the light receiving element 110S.

[0054] The light-emitting element 110R has a pixel electrode 111R, an organic layer 112R, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G, and a common electrode 113. The light-receiving element 110S has a pixel electrode 111S, an organic layer 155, and a common electrode 113. The common electrode 113 is provided in common to the light-emitting element 110R, the light-emitting element 110G, the light-emitting element 110B (not shown), and the light-receiving element 110S. Here, the pixel electrode 111S of the light-receiving element 110S can also be referred to as a sensor electrode, a light-receiving electrode, an imaging electrode, etc.

[0055] The organic layer 112R of the light-emitting element 110R contains a light-emitting organic compound that emits at least red light. The organic layer 112G of the light-emitting element 110G contains a light-emitting organic compound that emits at least green light. The organic layer 112B (not shown) of the light-emitting element 110B contains a light-emitting organic compound that emits at least blue light. The layers containing the light-emitting organic compound that are contained in the organic layer 112R, the organic layer 112G, and the organic layer 112B can also be referred to as light-emitting layers.

[0056] The organic layer 155 of the light receiving element 110S contains a photoelectric conversion material that is sensitive to the wavelength range of visible light or infrared light. The wavelength range to which the photoelectric conversion material of the organic layer 155 is sensitive preferably includes one or more of the wavelength range of light emitted by the light emitting element 110R, the wavelength range of light emitted by the light emitting element 110G, and the wavelength range of light emitted by the light emitting element 110B. Alternatively, a photoelectric conversion material that is sensitive to infrared light with a longer wavelength than the wavelength range of light emitted by the light emitting element 110R may be used. The layer containing the photoelectric conversion material of the organic layer 155 can also be called an active layer or a photoelectric conversion layer.

[0057] Hereinafter, when describing matters common to light emitting element 110R, light emitting element 110G, and light emitting element 110B, the letters that distinguish them may be omitted and they may be referred to as light emitting element 110. Similarly, when describing matters common to components that are distinguished by letters, such as organic layer 112R, organic layer 112G, and organic layer 112B, they may be described using symbols without the letters.

[0058] The organic layer 112 may have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to the light-emitting layer. For example, the organic layer 112 may have a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer from the pixel electrode 111 side. Furthermore, one or more of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer may not contain an organic compound, and may be a film containing only an inorganic compound or an inorganic substance.

[0059] The pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B (not shown) are provided for each light-emitting element 110. The common electrode 113 is provided as a continuous layer common to each light-emitting element 110 and the light-receiving element 110S. A conductive film that is transparent to visible light is used for either one of the pixel electrodes or the common electrode 113, and a conductive film that is reflective is used for the other. For example, by making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emission display device can be obtained. Note that by making both the pixel electrodes and the common electrode 113 transparent, a dual-emission display device can also be obtained. One embodiment of the present invention is preferably a top-emission display device or a dual-emission display device.

[0060] The pixel electrode 111 can also have a stacked structure of a reflective conductive film and a light-transmitting conductive film. In this case, it is preferable to provide the organic layer 112 over the reflective conductive film with a light-transmitting conductive film interposed therebetween. Furthermore, in this case, the thickness of the light-transmitting conductive film may be made different for each light-emitting element.

[0061] Transistors 102R, 102S, 102G, etc. are provided on a substrate 101. An insulating layer 103 is provided to cover each transistor 102, and a pixel electrode 111 is provided on the insulating layer 103. The pixel electrode 111R is electrically connected to the transistor 102R through an opening provided in the insulating layer 103. Similarly, the pixel electrode 111S is electrically connected to the transistor 102S, the pixel electrode 111G is electrically connected to the transistor 102G, and the pixel electrode 111B (not shown) is electrically connected to the transistor 102B (not shown).

[0062] An insulating layer 131 is provided to cover the ends of the pixel electrodes 111R, 111G, 111B (not shown), and 111S. The ends of the insulating layer 131 are preferably tapered.

[0063] In this specification and the like, the term "tapered shape" refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle (also referred to as the taper angle) between the inclined side surface and the surface to be formed is less than 90°.

[0064] The insulating layer 131 preferably contains an organic resin. By using an organic resin for the insulating layer 131, adhesion between the insulating layer 131 and the organic layer 112 and the organic layer 155 can be increased, and manufacturing yield can be improved.

[0065] Furthermore, by using an organic resin for the insulating layer 131, the surface can be made gently curved, which improves the coverage of the film formed on the insulating layer 131.

[0066] Examples of materials that can be used for the insulating layer 131 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0067] Alternatively, an inorganic insulating film can be used for the insulating layer 131. Using an inorganic insulating film for the insulating layer 131 is more suitable for microfabrication than using an organic resin, and is therefore particularly suitable for manufacturing a high-definition display device.

[0068] Examples of inorganic insulating materials that can be used for the insulating layer 131 include oxides or nitrides such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and hafnium oxide. Yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, and the like may also be used. The insulating layer 131 may also be a stack of films containing any of the above inorganic insulating materials.

[0069] The organic layer 112 and the organic layer 155 each have a region in contact with the upper surface of the pixel electrode and a region in contact with the surface of the insulating layer 131. In addition, the ends of the organic layer 112 and the organic layer 155 are each located on the insulating layer 131.

[0070] A protective layer 121 is provided on the common electrode 113 to cover the light emitting element 110R, the light emitting element 110G, the light receiving element 110S, and the light emitting element 110B (not shown). The protective layer 121 has a function of preventing impurities such as water from diffusing into each light emitting element 110 from above.

[0071] The protective layer 121 may have, for example, a single-layer structure or a stacked structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide.

[0072] A spacer 135 is provided on the protective layer 121. The spacer 135 is provided on the protective layer 121 in a portion that overlaps with the light receiving element 110S.

[0073] The spacer 135 is preferably made of a material that is translucent at least to light of a wavelength to which the light receiving element 110S is sensitive. The spacer 135 is preferably translucent to visible light. The spacer 135 can be made of an organic resin or an inorganic insulating film. In particular, using an organic resin for the spacer 135 is preferable because it is easy to increase the thickness.

[0074] 1B shows an example in which the spacer 135 is processed into an island shape. The spacer 135 is provided so as to overlap the pixel electrode 111S via the protective layer 121, the common electrode 113, and the organic layer 155. The end of the spacer 135 is provided so as to overlap the insulating layer 131. In FIG. 1A, the shape of the outer edge of the spacer 135 is shown by a dashed line.

[0075] In this specification, the term "island-like" refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from an adjacent light-emitting layer.

[0076] A light-shielding layer 136 is provided on the spacer 135. As shown in Figures 1A and 1B, the light-shielding layer 136 has an opening 130 that overlaps with the light-receiving element 110S. The opening 130 is located inside the outline of the pixel electrode 111S in a plan view. The opening 130 is also located inside the outline of the organic layer 155 in a plan view.

[0077] The light-shielding layer 136 is provided to cover not only the top surface but also the side surfaces of the spacer 135. The end of the light-shielding layer 136 opposite the opening 130 is provided to overlap the insulating layer 131 with the protective layer 121 interposed therebetween.

[0078] The light-shielding layer 136 includes a material that absorbs at least a portion of visible light. For example, it includes a material that absorbs at least one of the lights emitted by the light-emitting elements 110R, 110G, and 110B. For example, the light-shielding layer 136 itself may be made of a material that absorbs visible light (e.g., a colored organic or inorganic material), or the light-shielding layer 136 may include a pigment that absorbs visible light. For example, the light-shielding layer 136 may be made of a resin that contains carbon black as a pigment and functions as a black matrix, or a black thin film of chromium or the like. Alternatively, it may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light.

[0079] Here, the functions of the spacer 135 and the light-shielding layer 136 will be described using Figures 2A and 2B. Figures 2A and 2B show a light-receiving element 110S in the center and light-emitting elements 110G adjacent to both sides of it. An imaged object 160 is in contact with a substrate 170. The imaged object 160 has an uneven surface. The convex portions of the imaged object 160 are in contact with the substrate 170, while the concave portions are not. For example, the imaged object 160 is a fingertip, and the uneven shape of its surface can be rephrased as a fingerprint. Reflected light 181a, reflected light 181b, and reflected light 181c are reflected light that is reflected by the imaged object 160 or the like and heads toward the light-receiving element 110S when the light-emitting element 110G or the like is used as a light source.

[0080] 2B is a schematic cross-sectional view showing a case where the spacer 135 and the light-shielding layer 136 are not provided. In FIG. 2B, not only the light 181a reflected by the imaged object 160 directly above the light-receiving element 110S, but also the light 181b reflected from portions corresponding to different convex portions and the light 181c reflected from portions corresponding to concave portions of the imaged object 160 are incident on the light-receiving element 110S. This may result in blurring of the captured image.

[0081] 2A, by providing the spacer 135 and the light-shielding layer 136, the reflected light 181b and the reflected light 181c that are reflected obliquely toward the light-receiving element 110S are blocked by the light-shielding layer 136, and only the reflected light 181a from directly above the light-receiving element 110S can reach the light-receiving region of the light-receiving element 110S. This allows a clear image to be captured of the object to be imaged near the surface of the substrate 170. The thicker the spacer 135 and the smaller the opening diameter of the light-shielding layer 136, the narrower the solid angle of the imaging range, and the clearer the captured image can be.

[0082] Furthermore, light 182 guided through the adhesive layer 171 may also be incident on the light receiving element 110S. Examples of light 182 include light emitted from the light emitting element 110G and totally reflected at the interface between the adhesive layer 171 and the substrate 170. Such light can be called stray light. Stray light diffusing inside the display device in this way can cause noise when capturing an image with the light receiving element 110S. In other words, the sensitivity of the image (signal-to-noise ratio (S / N ratio)) decreases.

[0083] 2A , by providing the spacer 135 and the light-shielding layer 136, the light 182 propagating through the adhesive layer 171 is blocked by the light-shielding layer 136 and does not reach the light-receiving region of the light-receiving element 110S, thereby improving the imaging sensitivity.

[0084] Furthermore, as shown in FIG. 2A, by processing the spacer 135 into an island shape and covering its side surfaces with a light-shielding layer 136, it is possible to effectively block light that passes through the spacer 135 from the adhesive layer 171 and reaches the light receiving element 110S, as well as light that is guided through the spacer 135 itself and reaches the light receiving element 110S.

[0085] In the above example, the light-shielding layer 136 is disposed only on the light-receiving element 110S, but as shown in FIGS. 3A and 3B, the light-shielding layer 136 may also be disposed on the light-emitting element.

[0086] 3A and 3B, the light-shielding layer 136 is disposed between the light-emitting element 110 and the light-receiving element 110S, and also between adjacent light-emitting elements 110. In other words, the light-shielding layer 136 has an opening overlapping the light-emitting element 110 and an opening 130 overlapping the light-receiving element 110S. In this case, it is preferable that the diameter (or area) of the opening overlapping the light-emitting element 110 is larger than the opening overlapping the light-receiving element 110S.

[0087] The following describes a configuration example of a display device that has a different configuration from the above. Note that, in the following, the same reference numerals are used for parts that overlap with the above configuration example 1-1, and the above description will be referred to, and repeated description may not be provided.

[0088] 4A shows an example in which the spacer 135 is not formed into an island shape. The spacer 135 is provided to cover not only the light receiving element 110S but also the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B (not shown).

[0089] With this configuration, the process of forming the spacers 135 can be simplified, and therefore the manufacturing cost can be reduced.

[0090] FIG. 4B shows an example in which the light-shielding layer 136 is also disposed near the light-emitting element, similar to FIG. 3B.

[0091] 5A shows an example in which a lens 137 is used. The lens 137 is a convex lens and is provided on a spacer 135. The lens 137 is provided at a position overlapping with an opening of a light-shielding layer 136. A portion of the light-shielding layer 136 is provided to cover an end of the lens 137.

[0092] The lens 137 has a function of increasing the amount of light received by the light receiving element 110S by collecting the light that has passed through the opening 130 of the light blocking layer 136. This can improve the imaging sensitivity.

[0093] When using the lens 137, it is preferable to make the diameter of the opening 130 in the light-shielding layer 136 larger than the diameter of the light-receiving region of the light-receiving element 110S, because this effectively increases the amount of light received by the light-receiving element 110S. In Fig. 5A, the diameter (or width) of the light-receiving region of the light-receiving element 110S corresponds to the diameter (or width) of the opening in the insulating layer 131 on the pixel electrode 111S.

[0094] The lens 137 is translucent to at least light of the wavelength received by the light receiving element 110S. The lens 137 may be made of a material having a higher refractive index for light of the wavelength received by the light receiving element 110S than the adhesive layer 171. The lens 137 may be made of an organic resin such as an acrylic resin.

[0095] FIG. 5B shows an example in which the light-shielding layer 136 is also disposed near the light-emitting element, similar to FIG. 3B.

[0096] [Configuration Example 1-4] FIG. 6A shows an example in which a lens 137 is applied to the above configuration example 1-2.

[0097] FIG. 6B shows an example in which the light-shielding layer 136 is also disposed near the light-emitting element, similar to FIG. 3B.

[0098] [Configuration Example 1-5] FIG. 7A shows an example in which a lens 138 is provided not only on the light receiving element 110S but also on the light emitting element.

[0099] The lenses 138 are provided so as to overlap with the respective light emitting elements. By using the lenses 138, it is possible to increase the light extraction efficiency of the light emitting elements and reduce power consumption.

[0100] The lens 137 overlaps with the light receiving element 110S via the spacer 135 and the protective layer 121, whereas the spacer 135 is not provided between the lens 138 and the protective layer 121. Therefore, the distance between the lens 138 and the light emitting element 110 is smaller by the thickness of the spacer 135 than the distance between the lens 137 and the light receiving element 110S.

[0101] The lens 138 can also be formed by processing the same film as the lens 137. A convex lens or a concave lens may be used for the lens 138. When a concave lens is used, the lens 138 may be made of a material having a lower refractive index than the adhesive layer 171.

[0102] 7B shows an example in which the spacer 135 is not processed into an island shape, similar to Fig. 6A. The lens 138 is provided on the spacer 135, similar to the lens 137.

[0103] [Configuration Example 1-6] FIG. 8A shows an example in which the spacer 135 and the light-shielding layer 136 are formed using colored layers.

[0104] The configuration shown in FIG. 8A has a colored layer 174G instead of the spacer 135 and a light-shielding layer 174R instead of the light-shielding layer 136.

[0105] The colored layer 174G functions as a color filter that transmits green light and absorbs light of other colors, while the colored layer 174R functions as a color filter that transmits red light and absorbs light of other colors.

[0106] Light incident perpendicularly to the light receiving surface of the light receiving element 110S is almost entirely absorbed except for green light when passing through the colored layer 174G, resulting in green light being incident on the light receiving element 110S.

[0107] The colored layer used as the spacer can be determined depending on the wavelength of light used as a light source during imaging, the sensitivity characteristics of the light receiving element 110S, etc. Here, an example is shown in which the colored layer 174G, which is a green color filter, is used, but the colored layer 174R, which is a red color filter, or the colored layer, which is a blue color filter, may also be used, or a color filter that transmits light other than visible light (infrared light or ultraviolet light) may also be used.

[0108] Furthermore, when light that is incident obliquely onto the light receiving surface of the light receiving element 110S passes through the colored layer 174R, most of the light except for the red light is absorbed, and the remaining red light is absorbed by the colored layer 174G. In this way, by combining colored layers of different colors, it is possible to make them function as a light blocking layer.

[0109] A color filter of a different color from the color layer used as the spacer can be used as the color layer used in place of the light-shielding layer 136. For example, in the example shown in Fig. 8A, the color layer 174G is used as the spacer, and therefore a color filter that transmits blue light and absorbs light of other colors may be used in place of the color layer 174R.

[0110] As shown in FIG. 8A , it is preferable to provide each colored layer on a corresponding light-emitting element 110. Colored layer 174R is provided on light-emitting element 110R, and colored layer 174G is provided on light-emitting element 110G. By providing colored layers on the light-emitting elements, color purity can be further improved, resulting in a display device with high color reproducibility. Furthermore, the use of colored layers can suppress external light reflection, making it possible to configure the display without using a circular polarizer for anti-reflection. This not only increases light extraction efficiency and brightness, but also reduces power consumption, making this preferable.

[0111] 8B and 8C show examples in which the colored layer is continuous without being divided between each light emitting element and the light receiving element 110S.

[0112] 8B , the colored layer 174G used as a spacer is preferably separated between the light receiving element 110S and the light emitting element 110B. If the colored layer 174G is provided continuously between the light receiving element 110S and the light emitting element 110B, there is a risk that light emitted by the light emitting element 110B will be guided through the colored layer 174G and reach the light receiving element 110S. On the other hand, even if light emitted by the light emitting element 110R is guided through the colored layer 174R, it is absorbed by the colored layer 174G on the light receiving element 110S, so the colored layer 174R does not need to be separated between the light emitting element 110R and the light receiving element 110S.

[0113] 8C shows a cross section of a light-emitting element 110B that emits blue light. The light-emitting element 110B has a pixel electrode 111B, an organic layer 112B, and a common electrode 113. The pixel electrode 111B is electrically connected to the transistor 102B through an opening provided in the insulating layer 103. A colored layer 174B that functions as a blue color filter is disposed on top of the light-emitting element 110B.

[0114] As shown in FIG. 8C, on the light receiving element 110S, a colored layer 174R and a colored layer 174B may be provided on a colored layer 174G so as to face each other with the opening 130 interposed therebetween.

[0115] [Configuration Example 1-7] Figs. 9A, 9B, and 9C show an example in which a white light emitting element is applied to the above configuration example 1-6.

[0116] The light-emitting element 110W has an organic layer 112W between the pixel electrode and the common electrode 113. The organic layer 112W emits white light. The organic layer 112W may be configured to include, for example, two or more types of light-emitting materials that have a complementary color relationship.

[0117] The colored layer 174R, the colored layer 174G, or the colored layer 174B is provided in the region overlapping with the light emitting element 110W, thereby enabling full color display.

[0118] [Configuration Example 2] Hereinafter, an example of a configuration obtained by processing an organic layer by photolithography will be described.

[0119] When partially or entirely forming separate EL layers for light-emitting elements with different emission colors, it is known to form them by vapor deposition using a shadow mask such as a fine metal mask (FMM). However, with this method, deviations from the design occur in the shape and position of the island-shaped organic film due to various factors, such as the accuracy of the FMM, misalignment between the FMM and the substrate, deflection of the FMM, and the spread of the contours of the deposited film due to vapor scattering, making it difficult to achieve high resolution and a high aperture ratio for display devices. For this reason, measures have been taken to artificially increase the resolution (also known as pixel density) by applying special pixel arrangement methods such as a pentile arrangement.

[0120] In a fabrication method using FMM, two adjacent island-shaped organic films can be formed so that they partially overlap in order to achieve even the slightest increase in resolution and aperture ratio. This allows for a significant reduction in the distance between the light-emitting regions compared to when the two island-shaped organic films are not overlapped. However, when two adjacent island-shaped organic films are formed so that they overlap, current leakage between the two adjacent light-emitting elements through the overlapping organic films can occur, resulting in unintended light emission. This can result in reduced brightness and contrast, thereby degrading display quality. Furthermore, the leakage current can worsen power efficiency and power consumption.

[0121] Furthermore, if a similar leakage current occurs between the light-emitting element and the light-receiving element, the leakage current may become a source of noise when imaging using the light-receiving element, which may result in a decrease in imaging sensitivity (S / N ratio).

[0122] Therefore, in one embodiment of the present invention, a part or all of the organic layer located between a pair of electrodes of a light-emitting element and a part or all of the organic layer located between a pair of electrodes of a light-receiving element are processed by photolithography. At this time, it is preferable to process the organic layers between adjacent light-emitting elements and between adjacent light-emitting elements and light-receiving elements so that they are separated and do not contact each other. This makes it possible to separate current leakage paths through the organic layers between the light-emitting elements and between the light-emitting element and the light-receiving element.

[0123] In this way, leakage current (also called side leakage current) between the light-emitting element and the light-receiving element is suppressed, enabling high-precision imaging with a high S / N ratio. Therefore, clear imaging can be achieved even with weak light. Therefore, the brightness of the light-emitting element used as a light source can be reduced during imaging, thereby reducing power consumption.

[0124] Furthermore, a current leakage path between two adjacent light-emitting elements can be separated, which makes it possible to increase brightness, contrast, power efficiency, or reduce power consumption.

[0125] Furthermore, it is preferable to form an insulating layer to protect the side surfaces of the organic laminated film exposed by etching, thereby improving the reliability of the display device.

[0126] Between two adjacent light-emitting elements and between adjacent light-emitting elements and light-receiving elements, there are regions (recesses) where the organic layers of the light-receiving elements and light-emitting elements are not provided. When a common electrode, or a common electrode and a common layer, is formed to cover the recesses, a phenomenon occurs in which the common electrode is separated by a step at the edge of the EL layer (also called a step discontinuity), resulting in insulation of the common electrode on the EL layer. Therefore, it is preferable to use a configuration in which the local step located between two adjacent light-emitting elements is filled with a resin layer that functions as a planarization film (also called LFP: Local Filling Planarization). The resin layer functions as a planarization film. This suppresses step discontinuity in the common layer or common electrode, thereby achieving a highly reliable display device.

[0127] If the resin layer is provided in contact with the EL layer, the EL layer may be dissolved by a solvent used in forming the resin layer. Therefore, it is preferable to provide an insulating layer between the EL layer and the resin layer to protect the side surfaces of the EL layer. That is, it is preferable to provide an inorganic insulating layer in contact with the side surfaces and top surface of the EL layer at the end of the EL layer, and then provide a resin layer on the inorganic insulating layer.

[0128] Here, it is preferable not to provide a partition wall covering the edge of the pixel electrode. If such a partition wall is used, the region of the pixel electrode covered by the partition wall becomes a non-light-emitting region, which reduces the aperture ratio. In one embodiment of the present invention, the edge of the pixel electrode is tapered to improve the step coverage of the EL film formed on the pixel electrode, thereby preventing the EL layer from being divided by the step at the edge of the pixel electrode without using a partition wall. This allows for an extremely high aperture ratio.

[0129] A display device can also be formed by combining a white-emitting light-emitting element with a color filter. In this case, light-emitting elements provided in pixels (subpixels) that emit light of different colors can each have the same configuration, and all layers can be common layers. Furthermore, part or all of each EL layer can be separated by photolithography. This suppresses leakage current through the common layer, resulting in a display device with high contrast. In particular, in an element having a tandem structure in which multiple light-emitting layers are stacked via a highly conductive intermediate layer, leakage current through the intermediate layer can be effectively prevented, resulting in a display device that combines high brightness, high resolution, and high contrast.

[0130] [Configuration Example 2-1] Fig. 10A is a schematic cross-sectional view of a display device exemplified below, including a light-emitting element 110R, a light-emitting element 110G, and a light-receiving element 110S.

[0131] The light-emitting element 110R has a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. The light-receiving element 110S has a pixel electrode 111S, an organic layer 155, a common layer 114, and a common electrode 113. The common layer 114 and the common electrode 113 are provided as a continuous layer common to the light-emitting element 110R, the light-emitting element 110G, the light-receiving element 110S, and the light-emitting element 110B (not shown).

[0132] A conductive layer 161 is provided on the insulating layer 103, and a pixel electrode 111 of each light-emitting element 110 or light-receiving element 110S is provided on the conductive layer 161. The conductive layer 161 is electrically connected to each transistor 102 through an opening provided in the insulating layer 103. A recess is formed on the upper surface of the conductive layer 161 at the connection portion between the conductive layer 161 and the transistor 102, and a planarization layer 163 is provided to fill the recess. By providing the planarization layer 163, the portion of the pixel electrode 111 that overlaps with the connection portion can also be flattened, so that it can be used as a light-emitting region of the light-emitting element or a light-receiving region of the light-receiving element.

[0133] The organic layer 112 and the common layer 114 can each independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 can have a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer from the pixel electrode 111 side, and the common layer 114 can have an electron injection layer. For example, the common layer 114 can be a film containing only an inorganic compound or an inorganic substance without containing an organic compound.

[0134] 10A shows an example in which no insulating layer 131 is provided to cover the end of the pixel electrode 111. Since the organic layer 112 or the organic layer 155 has a portion that covers the end of the pixel electrode 111, it is preferable that the end of the pixel electrode 111 has a tapered shape.

[0135] The organic layer 112 and the organic layer 155 are processed into an island shape by photolithography. Therefore, the angle between the top surface and the side surface of the organic layer 112 and the organic layer 155 at their edges is close to 90 degrees. On the other hand, organic films formed using FMM (Fine Metal Mask) or the like tend to become gradually thinner toward the edges. For example, the top surface is formed in a sloped shape over a range of 1 μm to 10 μm to the edges, making it difficult to distinguish between the top surface and the side surface. The organic layer 112 and the organic layer 155 are preferably processed to have regions where the angle between the side surface and the bottom surface (taper angle) is 10 degrees to 120 degrees, preferably 30 degrees to 110 degrees, more preferably 45 degrees to 100 degrees, and even more preferably 60 degrees to 95 degrees. The smaller the taper angle, the shorter the length from the end of pixel electrode 111 to the end of organic layer 112 or organic layer 155 can be, and therefore a higher definition display device can be realized.

[0136] Between the adjacent light emitting element 110R and light receiving element 110S, there are an insulating layer 125 and a resin layer 126. Fig. 10B shows an enlarged view of a part of the light emitting element 110R, a part of the light receiving element 110S, and the area between them.

[0137] Between the adjacent light emitting element 110 and light receiving element 110S, the side surface of the organic layer 112 and the side surface of the organic layer 155 are disposed opposite each other with the resin layer 126 interposed therebetween. The resin layer 126 has a smooth upper surface, and the common layer 114 and the common electrode 113 are disposed to cover the upper surface of the resin layer 126.

[0138] The resin layer 126 functions as a planarization film for reducing steps at the ends of the organic layer 112 or the organic layer 155. Providing the resin layer 126 can prevent a phenomenon (also called step disconnection) in which the common electrode 113 is divided by steps in the organic layer 112 or the organic layer 155, and can prevent the common electrode on the organic layer 112 or the organic layer 155 from being insulated. The resin layer 126 can also be called an LFP (Local Filling Planarization) layer.

[0139] An insulating layer containing an organic material can be suitably used as the resin layer 126. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, etc. can be used as the resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the resin layer 126.

[0140] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0141] The resin layer 126 may contain a material that absorbs visible light. For example, the resin layer 126 itself may be made of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light. For example, the resin layer 126 may be a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0142] The insulating layer 125 is provided in contact with the side surfaces of the organic layer 112 and the organic layer 155. The insulating layer 125 is also provided to cover the upper end portions of the organic layer 112 and the organic layer 155. A portion of the insulating layer 125 is provided in contact with the upper surface of the insulating layer 103.

[0143] The insulating layer 125 is located between the organic layer 112 or the organic layer 155 and the resin layer 126, and functions as a protective layer to prevent the resin layer 126 from contacting the organic layer 112 or the organic layer 155. If the organic layer 112 or the organic layer 155 comes into contact with the resin layer 126, the organic layer 112 or the organic layer 155 may be dissolved by an organic solvent used in forming the resin layer 126. Therefore, providing such an insulating layer 125 makes it possible to protect the side surfaces of the organic layer. Furthermore, the insulating layer 125 can prevent the side surfaces of the organic layer 112 or the organic layer 155 from being exposed to the atmosphere. This allows for the manufacture of highly reliable light-emitting and light-receiving elements.

[0144] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, by using an inorganic insulating film such as a metal oxide film, an aluminum oxide film, or a silicon oxide film formed by an ALD method as the insulating layer 125, an insulating layer 125 with few pinholes and excellent protection of the EL layer can be formed.

[0145] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0146] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method because it has good coverage.

[0147] At the upper end of organic layer 112 or organic layer 155, resin layer 126 is provided to cover the upper surface of organic layer 112 or organic layer 155. Furthermore, layer 128 and insulating layer 125 are laminated in this order between the upper surface of organic layer 112 or organic layer 155 and resin layer 126. Layer 128 is provided in contact with the upper surface of organic layer 112.

[0148] The layer 128 is a remaining portion of a protective layer (also referred to as a mask layer or a sacrificial layer) for protecting the organic layer 112 or the organic layer 155 during etching of the organic layer 112 or the organic layer 155. The layer 128 can be made of a material that can be used for the insulating layer 125. In particular, it is preferable to use the same material for the layer 128 and the insulating layer 125 because a common processing device or the like can be used for both layers.

[0149] In particular, inorganic insulating films such as metal oxide films such as aluminum oxide films and hafnium oxide films, or silicon oxide films formed by the ALD method have few pinholes, and therefore, by using them as layer 128, an insulating layer 125 having excellent function of protecting the EL layer can be formed.

[0150] In particular, it is preferable to use an insulating film that can be processed by wet etching for the layer 128. Because the layer 128 is a film that contacts the upper surface of the organic layer 112, using wet etching that causes less damage to the surface on which it is formed can improve the reliability of the light-emitting element 110 and the light-receiving element 110S.

[0151] A protective layer 121 is provided to cover the common electrode 113, and a spacer 135 and a light-shielding layer 136 are provided on the protective layer 121. For the protective layer 121, the spacer 135, the light-shielding layer 136, etc., the description of Configuration Example 1 can be referred to.

[0152] [Configuration Example 2-2] FIGS. 11A and 11B show an example in which a lens 137 is applied to the configuration illustrated in FIG. 10A.

[0153] As described in Configuration Example 1-3, when the lens 137 is used, it is preferable to make the diameter of the opening 130 in the light-shielding layer 136 larger than the diameter of the light-receiving region of the light-receiving element 110S. In Configuration Example 1-3, the diameter of the opening of the light-receiving element 110S could be controlled by the diameter of the opening in the insulating layer 131. However, in this configuration, the insulating layer 131 is not used, and therefore the light-receiving region of the light-receiving element 110S corresponds to the diameter of the pixel electrode 111S or the diameter of the opening in the resin layer 126, the insulating layer 125, or the layer 128.

[0154] 11A shows an example in which the light receiving area of ​​the light receiving element 110S is smaller than the light emitting area of ​​the light emitting element 110. This makes it possible to increase the aperture ratio (effective light emitting area ratio) of the light emitting element, thereby improving reliability.

[0155] 11B shows an example in which the diameter of the light receiving region of the light receiving element 110S is narrowed and the width of the resin layer 126 is increased compared to FIG. 10A. This increases the distance between the light receiving element 110S and the adjacent light emitting element, allowing the diameter of the lens 137 to be increased accordingly. This increases the amount of light received by the light receiving element 110S.

[0156] FIG. 11C shows an example in which a lens 138 is further provided on the light emitting element 110 in addition to the configuration shown in FIG. 11B.

[0157] [Configuration Example 2-3] FIG. 12A shows an example in which the spacer 135 and the light-shielding layer 136 are configured with colored layers 174R, 174G, and the like.

[0158] FIG. 12B shows an example in which a white light-emitting element 110W is applied to the light-emitting element of FIG. 12A.

[0159] In this way, forming the spacer 135 and the light-shielding layer 136 from a colored layer is preferable because it is possible to prevent stray light from reaching the light-receiving element 110S and to improve the clarity of the image without increasing the number of processes.

[0160] The above is a description of the configuration example.

[0161] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0162] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0163] In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described. Although the display device is capable of displaying an image, it can also be used as an imaging device by using a light-emitting element as a light source.

[0164] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch-type terminals, tablet terminals, personal digital assistants, and sound reproduction devices.

[0165] [Display Device 400] FIG. 13 shows a perspective view of display device 400, and FIG. 14A shows a cross-sectional view of display device 400.

[0166] The display device 400 has a configuration in which a substrate 452 and a substrate 451 are bonded together. In Fig. 13, the substrate 452 is clearly indicated by a dashed line.

[0167] The display device 400 includes a display portion 462, a circuit 464, wiring 465, and the like. Fig. 13 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400. Therefore, the structure shown in Fig. 14 can also be considered as a display module including the display device 400, an IC (integrated circuit), and an FPC.

[0168] The circuit 464 can be, for example, a scanning line driver circuit.

[0169] The wiring 465 has a function of supplying signals and power to the display portion 462 and the circuit 464. The signals and power are input to the wiring 465 from the outside via the FPC 472 or input to the wiring 465 from the IC 473.

[0170] 13 shows an example in which an IC 473 is provided on a substrate 451 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. The IC 473 can be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 400 and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0171] 14A shows an example of a cross section of the display device 400, which is obtained by cutting a part of a region including the FPC 472, a part of the circuit 464, a part of the display unit 462, and a part of a region including a connection portion. In FIG. 14A, an example of a cross section of the display unit 462 is shown, in particular, by cutting a region including the light-emitting element 430b that emits green light (G) and the light-receiving element 440 that receives reflected light (L).

[0172] A display device 400 shown in FIG. 14A includes a transistor 252, a transistor 260, a transistor 258, a light-emitting element 430b, a light-receiving element 440, and the like between a substrate 451 and a substrate 452.

[0173] The light-emitting element 430b and the light-receiving element 440 can be any of the light-emitting elements or light-receiving elements exemplified above.

[0174] Here, when a pixel of a display device has three types of subpixels having light-emitting elements of different light colors, the three subpixels may be subpixels of three colors: red (R), green (G), and blue (B), or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). When a pixel of a display device has four subpixels, the four subpixels may be subpixels of four colors: R, G, B, and white (W), or subpixels of four colors: R, G, B, and Y. Alternatively, the subpixels may be equipped with light-emitting elements that emit infrared light.

[0175] Furthermore, as the light receiving element 440, a photoelectric conversion element having sensitivity to light in the red, green, or blue wavelength region, or a photoelectric conversion element having sensitivity to light in the infrared wavelength region can be used.

[0176] The substrate 452 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided to overlap the light emitting element 430b and the light receiving element 440, respectively, and a solid sealing structure is applied to the display device 400.

[0177] The light-emitting element 430b and the light-receiving element 440 each have a conductive layer 411a, a conductive layer 411b, and a conductive layer 411c as pixel electrodes. The conductive layer 411b is reflective to visible light and functions as a reflective electrode. The conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0178] A conductive layer 411a included in the light-emitting element 430b is connected to a conductive layer 272b included in the transistor 260 through an opening provided in the insulating layer 294. The transistor 260 has a function of controlling driving of the light-emitting element. On the other hand, the conductive layer 411a included in the light-receiving element 440 is electrically connected to a conductive layer 272b included in the transistor 258. The transistor 258 has a function of controlling the timing of exposure using the light-receiving element 440, etc.

[0179] An organic layer 412G or an organic layer 412S is provided covering the pixel electrode. Insulating layers 421 are provided in contact with the side surfaces of the organic layer 412G and the organic layer 412S, respectively, and a resin layer 422 is provided on the insulating layers 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided covering the organic layers 412G and 412S. Providing the protective layer 416 to cover the light-emitting element prevents impurities such as water from entering the light-emitting element, thereby improving the reliability of the light-emitting element. A spacer 418 is provided on the protective layer 416 so as to cover the light-receiving element 440, and a light-shielding layer 417 having an opening is provided covering the top and side surfaces of the spacer 418.

[0180] Light G emitted by the light-emitting element 430b is emitted toward the substrate 452. The light-receiving element 440 receives light L incident through the substrate 452 and converts it into an electrical signal. The substrate 452 is preferably made of a material that is highly transparent to visible light.

[0181] The transistor 252, the transistor 260, and the transistor 258 are all formed over a substrate 451. These transistors can be manufactured using the same material and through the same process.

[0182] Note that the transistor 252, the transistor 260, and the transistor 258 may be fabricated to have different structures. For example, transistors may be fabricated with or without a back gate, or transistors may be fabricated with different materials and / or thicknesses of semiconductors, gate electrodes, gate insulating layers, source electrodes, and drain electrodes.

[0183] The substrate 451 and the insulating layer 262 are bonded together by an adhesive layer 455 .

[0184] In a method for manufacturing the display device 400, first, a formation substrate provided with the insulating layer 262, the transistors, the light-emitting elements, the light-receiving element, and the like is bonded to a substrate 452 provided with a light-shielding layer 417 with an adhesive layer 442. Then, the formation substrate is peeled off, and a substrate 451 is attached to the exposed surface, so that the components formed on the formation substrate are transferred to the substrate 451. The substrate 451 and the substrate 452 each preferably have flexibility. This can increase the flexibility of the display device 400.

[0185] A connection portion 254 is provided in a region of the substrate 451 where the substrate 452 does not overlap. In the connection portion 254, a wiring 465 is electrically connected to an FPC 472 via a conductive layer 466 and a connection layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and the FPC 472 to be electrically connected via the connection layer 292.

[0186] The transistor 252, the transistor 260, and the transistor 258 each include a conductive layer 271 functioning as a gate, an insulating layer 261 functioning as a gate insulating layer, a semiconductor layer 281 including a channel formation region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 functioning as a gate insulating layer, a conductive layer 273 functioning as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel formation region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel formation region 281i.

[0187] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n through an opening provided in the insulating layer 265. One of the conductive layer 272a and the conductive layer 272b functions as a source, and the other functions as a drain.

[0188] 14A shows an example in which the top surface and side surfaces of the semiconductor layer are covered with an insulating layer 275. The conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and the insulating layer 265, respectively.

[0189] 14B , the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281 but does not overlap with the low-resistance region 281n. For example, the insulating layer 275 is processed using the conductive layer 273 as a mask, thereby manufacturing the structure shown in FIG. 14B . In FIG. 14B , the insulating layer 265 is provided to cover the insulating layer 275 and the conductive layer 273, and the conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings in the insulating layer 265. Furthermore, an insulating layer 268 may be provided to cover the transistor.

[0190] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0191] The transistors 252, 260, and 258 each have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving the other.

[0192] The crystallinity of a semiconductor material used for a semiconductor layer of a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0193] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0194] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. Use of a metal oxide with a wide band gap can reduce the off-state current of the OS transistor.

[0195] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (wherein M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium. Note that a metal oxide containing indium, M, and zinc may be referred to as an In-M-Zn oxide hereinafter.

[0196] For example, it is preferable to use In-Ga-Zn oxide, In-Sn-Zn oxide, or In-Ga-Zn oxide containing Sn.

[0197] Alternatively, the semiconductor layer of the transistor may include silicon, such as amorphous silicon or crystalline silicon (low-temperature polysilicon (also referred to as LTPS) or single-crystal silicon).

[0198] In particular, low-temperature polysilicon has relatively high mobility and can be formed on a glass substrate, and therefore can be suitably used in display devices. For example, a transistor using low-temperature polysilicon in a semiconductor layer (LTPS transistor) can be applied to the transistor 252 and the like in the driver circuit, and a transistor using an oxide semiconductor in a semiconductor layer (OS transistor) can be applied to the transistor 260, the transistor 258, and the like provided in the pixel. By using both an LTPS transistor and an OS transistor, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. Note that, as a more preferred example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction between wirings and an LTPS transistor as a transistor for controlling current.

[0199] The display device shown in FIG. 14A includes an OS transistor and separate organic layers between light-emitting elements. This configuration significantly reduces leakage currents that may flow through the transistor, between adjacent light-emitting elements, and between adjacent light-emitting elements and light-receiving elements (also referred to as lateral leakage current or side leakage current). Furthermore, when an image is displayed on the display device, the viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. By significantly reducing the leakage currents that may flow through the transistor and the lateral leakage current between light-emitting elements, a display with extremely low light leakage (so-called floating black) during black display (also referred to as true black display) can be achieved.

[0200] The transistors included in the circuit 464 may have the same structure as or different from the transistors included in the display portion 462. The transistors included in the circuit 464 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 462 may all have the same structure or may have two or more types of structures.

[0201] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0202] It is preferable to use an inorganic insulating film for each of the insulating layers 261, 262, 265, 268, and 275. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above-described inorganic insulating films may be stacked.

[0203] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This makes it possible to prevent impurities from entering from the edge of the display device 400 through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0204] An organic insulating film is suitable for the insulating layer 294 that functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0205] It is preferable to provide a light-shielding layer 417 on the surface of substrate 452 facing substrate 451. In addition, various optical members can be arranged on the outside of substrate 452. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, etc. may be arranged on the outside of substrate 452.

[0206] 14A shows a connection portion 278. The common electrode 413 and a wiring are electrically connected at the connection portion 278. FIG. 14A shows an example in which the same layered structure as that of the pixel electrode is applied to the wiring.

[0207] The substrate 451 and the substrate 452 can each be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting element is extracted. Using a flexible material for the substrate 451 and the substrate 452 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used for the substrate 451 or the substrate 452.

[0208] The substrates 451 and 452 can be made of polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of the substrates 451 and 452 may be made of glass having a thickness sufficient to provide flexibility.

[0209] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0210] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0211] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0212] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0213] The adhesive layer can be made of various curable adhesives, such as photo-curable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0214] The connection layer 292 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0215] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0216] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display device, and for conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.

[0217] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0218] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0219] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0220] Embodiment 3 In this embodiment, a display device according to one embodiment of the present invention will be described.

[0221] A display device according to one embodiment of the present invention includes a light-receiving element (also referred to as a light-receiving device) and a light-emitting element (also referred to as a light-emitting device). Alternatively, the display device according to one embodiment of the present invention may include a light-receiving and light-emitting element (also referred to as a light-emitting and receiving device) and a light-emitting element.

[0222] First, a display device having a light receiving element and a light emitting element will be described.

[0223] A display device according to one embodiment of the present invention includes a light-receiving element and a light-emitting element in a light-receiving and light-emitting portion. In the display device according to one embodiment of the present invention, the light-emitting and receiving portion includes light-emitting elements arranged in a matrix, and an image can be displayed in the light-receiving and light-emitting portion. The light-receiving and light-emitting portion also includes light-receiving elements arranged in a matrix, and the light-receiving and light-emitting portion has one or both of an imaging function and a sensing function. The light-receiving and light-emitting portion can be used as an image sensor, a touch sensor, or the like. That is, by detecting light in the light-receiving and light-emitting portion, an image can be captured and a touch operation of an object (such as a finger or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can utilize the light-emitting element as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced.

[0224] In a display device of one embodiment of the present invention, when light emitted by a light-emitting element included in the light-emitting and receiving portion is reflected (or scattered) by an object, the light-receiving element can detect the reflected light (or scattered light); therefore, imaging, detection of touch operations, and the like are possible even in dark places.

[0225] The light-emitting element included in the display device of one embodiment of the present invention functions as a display element (also referred to as a display device).

[0226] As the light-emitting element, it is preferable to use an EL element (also referred to as an EL device) such as an OLED or a QLED. Examples of light-emitting materials contained in EL elements include fluorescent materials (fluorescent materials), phosphorescent materials (phosphorescent materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). As the light-emitting material contained in EL elements, not only organic compounds but also inorganic compounds (quantum dot materials, etc.) can be used. Furthermore, LEDs such as micro LEDs can also be used as light-emitting elements.

[0227] A display device according to one embodiment of the present invention has a function of detecting light using a light-receiving element.

[0228] When the light receiving element is used as an image sensor, the display device can capture an image using the light receiving element, for example, the display device can be used as a scanner.

[0229] An electronic device to which the display device of one embodiment of the present invention is applied can acquire data related to biometric information such as a fingerprint or palm print by using a function as an image sensor. That is, a biometric authentication sensor can be built into the display device. The built-in biometric authentication sensor in the display device reduces the number of components in the electronic device compared to a case in which a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0230] Furthermore, when the light receiving element is used as a touch sensor, the display device can detect a touch operation of an object using the light receiving element.

[0231] The light receiving element may be, for example, a pn-type or pin-type photodiode. The light receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on the light receiving element and generates electric charge. The amount of electric charge generated by the light receiving element is determined based on the amount of light incident on the light receiving element.

[0232] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0233] In one embodiment of the present invention, an organic EL element (also referred to as an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed over the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL element.

[0234] If all layers constituting an organic EL element and an organic photodiode were to be fabricated separately, the number of film-forming steps would be enormous. However, since organic photodiodes have many layers that can be configured in common with organic EL elements, the number of film-forming steps can be reduced by forming the layers that can be configured in common at the same time.

[0235] For example, one of the pair of electrodes (common electrode) can be a layer common to the light-receiving element and the light-emitting element. Furthermore, for example, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer can be a layer common to the light-receiving element and the light-emitting element. By having a common layer for the light-receiving element and the light-emitting element in this way, the number of film formations and the number of masks can be reduced, thereby reducing the manufacturing process and manufacturing costs of the display device. Furthermore, a display device having a light-receiving element can be manufactured using existing manufacturing equipment and manufacturing methods for display devices.

[0236] Next, a display device having light emitting and receiving elements and a light emitting element will be described. Note that the description of the same functions, actions, effects, etc. as those described above may be omitted.

[0237] In a display device according to one embodiment of the present invention, a subpixel that exhibits one of the colors has a light-emitting / receiving element instead of a light-emitting element, and a subpixel that exhibits the other color has a light-emitting element. The light-emitting / receiving element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three subpixels, i.e., a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-emitting / receiving element, and the other subpixels have light-emitting elements. Therefore, the light-emitting / receiving portion of the display device according to one embodiment of the present invention has a function of displaying an image using both the light-emitting / receiving element and the light-emitting element.

[0238] By using a light-receiving / light-emitting element that serves as both a light-emitting element and a light-receiving element, a pixel can be given a light-receiving function without increasing the number of subpixels included in the pixel. This allows one or both of an imaging function and a sensing function to be added to the light-receiving / light-emitting portion of the display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, the display device of one embodiment of the present invention can have a higher pixel aperture ratio and can easily achieve higher resolution than a display device in which a subpixel having a light-receiving element is provided separately from a subpixel having a light-emitting element.

[0239] In a display device according to one embodiment of the present invention, light-emitting and receiving elements and light-emitting elements are arranged in a matrix in a light-emitting and receiving portion, and an image can be displayed in the light-emitting and receiving portion. The light-emitting and receiving portion can be used as an image sensor, a touch sensor, or the like. In the display device according to one embodiment of the present invention, the light-emitting element can be used as a light source for the sensor. Therefore, imaging, detection of a touch operation, and the like can be performed even in a dark place.

[0240] The light-emitting / receiving element can be fabricated by combining an organic EL element and an organic photodiode. For example, the light-emitting / receiving element can be fabricated by adding an active layer of an organic photodiode to the layered structure of the organic EL element. Furthermore, the light-emitting / receiving element fabricated by combining an organic EL element and an organic photodiode can suppress an increase in the number of film-forming steps by forming layers that can have a common configuration with the organic EL element in a single step.

[0241] For example, one of the pair of electrodes (common electrode) may be a layer common to the light-emitting and light-emitting elements. Also, for example, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a layer common to the light-emitting and light-emitting elements.

[0242] Note that the layers of the light emitting / receiving element may have different functions depending on whether the light emitting / receiving element functions as a light receiving element or a light emitting element. In this specification, the components are referred to based on their functions when the light emitting / receiving element functions as a light emitting element.

[0243] The display device of this embodiment mode has a function of displaying an image using a light-emitting element and a light-emitting / light-emitting element. That is, the light-emitting element and the light-emitting / light-emitting element function as display elements.

[0244] The display device of this embodiment has a function of detecting light using a light receiving and emitting element, which can detect light having a shorter wavelength than light emitted by the light receiving and emitting element itself.

[0245] When the light-emitting / receiving elements are used as an image sensor, the display device of this embodiment can capture an image using the light-emitting / receiving elements. When the light-emitting / receiving elements are used as a touch sensor, the display device of this embodiment can detect a touch operation of an object using the light-emitting / receiving elements.

[0246] The light-receiving / light-emitting element functions as a photoelectric conversion element. The light-receiving / light-emitting element can be fabricated by adding an active layer of a light-receiving element to the configuration of the light-emitting element. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving / light-emitting element.

[0247] In particular, it is preferable to use an organic photodiode active layer having a layer containing an organic compound as the light-receiving / light-emitting element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0248] A display device, which is an example of a display device according to one embodiment of the present invention, will be described in more detail below with reference to drawings.

[0249] 15A shows a schematic diagram of a display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light receiving element 212, a light emitting element 211R, a light emitting element 211G, a light emitting element 211B, a functional layer 203, and the like.

[0250] The light-emitting elements 211R, 211G, 211B, and light-receiving element 212 are provided between the substrate 201 and the substrate 202. The light-emitting elements 211R, 211G, and 211B emit red (R), green (G), and blue (B) light, respectively. Note that hereinafter, when there is no need to distinguish between the light-emitting elements 211R, 211G, and 211B, they may be referred to as light-emitting elements 211.

[0251] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more sub-pixels. Each sub-pixel has one light-emitting element. For example, a pixel may have three sub-pixels (e.g., three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M)), or four sub-pixels (e.g., four colors of R, G, B, and white (W), or four colors of R, G, B, and Y). Each pixel also has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Furthermore, one pixel may have multiple light-receiving elements 212.

[0252] 15A shows a state in which finger 220 touches the surface of substrate 202. A portion of the light emitted by light-emitting element 211G is reflected at the contact point between substrate 202 and finger 220. A portion of the reflected light is then incident on light-receiving element 212, making it possible to detect that finger 220 has touched substrate 202. In other words, display panel 200 can function as a touch panel.

[0253] The functional layer 203 has a circuit for driving the light-emitting elements 211R, 211G, and 211B, and a circuit for driving the light-receiving element 212. The functional layer 203 is provided with switches, transistors, capacitors, wiring, and the like. Note that when the light-emitting elements 211R, 211G, and 211B and the light-receiving element 212 are driven by a passive matrix method, a configuration without switches, transistors, and the like may be used.

[0254] It is preferable that the display panel 200 has a function of detecting the fingerprint of a finger 220. Fig. 15B is a schematic enlarged view of a contact portion when the finger 220 is in contact with the substrate 202. Fig. 15B also shows light-emitting elements 211 and light-receiving elements 212 arranged alternately.

[0255] A fingerprint is formed on the finger 220 by recesses and protrusions, and therefore the protrusions of the fingerprint are in contact with the substrate 202 as shown in FIG.

[0256] Light reflected from a surface, interface, etc. can be classified as specular reflection or diffuse reflection. Specular reflection is highly directional light, with the angle of incidence and the angle of reflection matching, while diffuse reflection is low-directional light, with low angular dependence of intensity. The diffuse reflection component is dominant in the light reflected from the surface of the finger 220. On the other hand, the specular reflection component is dominant in the light reflected from the interface between the substrate 202 and the atmosphere.

[0257] The intensity of light reflected by the contact or non-contact surface between the finger 220 and the substrate 202 and incident on the light receiving element 212 located directly below them is the sum of specularly reflected light and diffusely reflected light. As described above, at the concave portions of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specularly reflected light (indicated by the solid arrows) is dominant, whereas at the convex portions, they come into contact, so diffusely reflected light (indicated by the dashed arrows) from the finger 220 is dominant. Therefore, the intensity of light received by the light receiving element 212 located directly below the concave portions is higher than that of the light receiving element 212 located directly below the convex portions. This makes it possible to capture an image of the fingerprint of the finger 220.

[0258] A clear fingerprint image can be obtained by arranging the light receiving elements 212 at an interval smaller than the distance between two convex portions of a fingerprint, preferably the distance between adjacent convex and concave portions. Since the distance between convex and concave portions of a human fingerprint is approximately 200 μm, the interval between the light receiving elements 212 is, for example, 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and is 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0259] Fig. 15C shows an example of a fingerprint image captured by display panel 200. In Fig. 15C, the outline of finger 220 is indicated by a dashed line and the outline of contact portion 221 is indicated by a dashed line within imaging range 223. Within contact portion 221, a fingerprint 222 with high contrast can be captured due to differences in the amount of light incident on light receiving element 212.

[0260] The display panel 200 can also function as a touch panel or a pen tablet. Fig. 15D shows a state in which the tip of a stylus 225 is in contact with the substrate 202 and is slid in the direction of the dashed arrow.

[0261] As shown in Figure 15D, the diffuse reflected light scattered by the tip of the stylus 225 and the contact surface of the substrate 202 is incident on the light receiving element 212 located at the part overlapping with the contact surface, thereby enabling the position of the tip of the stylus 225 to be detected with high accuracy.

[0262] 15E shows an example of a trajectory 226 of the stylus 225 detected by the display panel 200. The display panel 200 is capable of detecting the position of a detectable object such as the stylus 225 with high positional accuracy, and therefore is also capable of performing high-resolution drawing in drawing applications, etc. Furthermore, unlike when a capacitive touch sensor, an electromagnetic induction touch pen, or the like is used, the position of even a highly insulating detectable object can be detected, and therefore the material of the tip of the stylus 225 is not a factor, and various writing implements (e.g., a brush, a glass pen, a feather pen, etc.) can be used.

[0263] 15F to 15H show an example of a pixel that can be applied to the display panel 200. FIG.

[0264] 15F and 15G each have a red (R) light-emitting element 211R, a green (G) light-emitting element 211G, a blue (B) light-emitting element 211B, and a light-receiving element 212. The pixel has a pixel circuit for driving the light-emitting element 211R, the light-emitting element 211G, the light-emitting element 211B, and the light-receiving element 212, respectively.

[0265] Fig. 15F shows an example in which three light-emitting elements and one light-receiving element are arranged in a 2 x 2 matrix, while Fig. 15G shows an example in which three light-emitting elements are arranged in a row, with one horizontally long light-receiving element 212 arranged below them.

[0266] 15H is an example of a pixel having a white (W) light-emitting element 211W. Here, four light-emitting elements are arranged in a row, and a light-receiving element 212 is arranged below them.

[0267] The pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0268] [Configuration Example 1-2] Hereinafter, an example of a configuration including a light-emitting element that emits visible light, a light-emitting element that emits infrared light, and a light-receiving element will be described.

[0269] The display panel 200A shown in Fig. 16A includes a light-emitting element 211IR in addition to the configuration illustrated in Fig. 15A. The light-emitting element 211IR is a light-emitting element that emits infrared light IR. In this case, it is preferable to use an element that can receive at least the infrared light IR emitted by the light-emitting element 211IR as the light-receiving element 212. It is more preferable to use an element that can receive both visible light and infrared light as the light-receiving element 212.

[0270] As shown in FIG. 16A, when a finger 220 touches the substrate 202, the infrared light IR emitted from the light-emitting element 211IR is reflected by the finger 220, and a portion of the reflected light is incident on the light-receiving element 212, thereby obtaining position information of the finger 220.

[0271] 16B to 16D show examples of pixels that can be applied to the display panel 200A.

[0272] Fig. 16B shows an example in which three light-emitting elements are arranged in a row, and below them, light-emitting element 211IR and light-receiving element 212 are arranged side by side. Fig. 16C shows an example in which four light-emitting elements including light-emitting element 211IR are arranged in a row, and below them, light-receiving element 212 is arranged.

[0273] FIG. 16D shows an example in which three light-emitting elements and a light-receiving element 212 are arranged on all four sides with the light-emitting element 211IR at the center.

[0274] In the pixels shown in FIGS. 16B to 16D, the positions of the light-emitting elements and the light-emitting elements and the light-receiving elements can be interchanged.

[0275] [Configuration Example 1-3] Hereinafter, an example of a configuration including a light-emitting element that emits visible light and a light-receiving / light-emitting element that emits visible light and receives visible light will be described.

[0276] The display panel 200B shown in Fig. 17A has a light-emitting element 211B, a light-emitting element 211G, and a light-receiving / light-emitting element 213R. The light-receiving / light-emitting element 213R functions as a light-emitting element that emits red (R) light and as a photoelectric conversion element that receives visible light. Fig. 17A shows an example in which the light-receiving / light-emitting element 213R receives green (G) light emitted by the light-emitting element 211G. The light-receiving / light-emitting element 213R may also receive blue (B) light emitted by the light-emitting element 211B. The light-receiving / light-emitting element 213R may also receive both green light and blue light.

[0277] For example, it is preferable that the light receiving / emitting element 213R receives light with a shorter wavelength than the light it emits. Alternatively, the light receiving / emitting element 213R may be configured to receive light with a longer wavelength than the light it emits (e.g., infrared light). The light receiving / emitting element 213R may be configured to receive light with a wavelength similar to the light it emits, but in that case, it may also receive the light it emits, which could reduce the light emission efficiency. Therefore, it is preferable that the light receiving / emitting element 213R is configured so that the peak of the emission spectrum and the peak of the absorption spectrum do not overlap as much as possible.

[0278] In addition, the light emitted by the light emitting / receiving element is not limited to red light. Furthermore, the light emitted by the light emitting element is not limited to a combination of green light and blue light. For example, the light emitting / receiving element may be an element that emits green or blue light and receives light of a wavelength different from the light it emits.

[0279] In this way, by having the light emitting / receiving element 213R function as both a light emitting element and a light receiving element, the number of elements arranged in one pixel can be reduced, which makes it easier to achieve higher definition, a higher aperture ratio, and higher resolution.

[0280] 17B to 17I show an example of a pixel that can be applied to the display panel 200B.

[0281] Fig. 17B shows an example in which the light emitting / receiving element 213R, the light emitting element 211G, and the light emitting element 211B are arranged in a row. Fig. 17C shows an example in which the light emitting element 211G and the light emitting element 211B are arranged alternately in the vertical direction, and the light emitting / receiving element 213R is arranged next to them.

[0282] FIG. 17D shows an example in which three light-emitting elements (light-emitting element 211G, light-emitting element 211B, and light-emitting element 211X) and one light-receiving / light-emitting element are arranged in a 2×2 matrix. The light-emitting element 211X is an element that emits light other than R, G, and B. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), infrared light (IR), and ultraviolet light (UV). When the light-emitting element 211X emits infrared light, the light-receiving / light-emitting element preferably has a function to detect infrared light or a function to detect both visible light and infrared light. The wavelength of light detected by the light-receiving / light-emitting element can be determined depending on the application of the sensor.

[0283] FIG. 17E shows two pixels. An area including three elements surrounded by dotted lines corresponds to one pixel. Each pixel has a light-emitting element 211G, a light-emitting element 211B, and an optical element 213R. In the left pixel shown in FIG. 17E, the light-emitting element 211G is arranged in the same row as the optical element 213R, and the light-emitting element 211B is arranged in the same column as the optical element 213R. In the right pixel shown in FIG. 17E, the light-emitting element 211G is arranged in the same row as the optical element 213R, and the light-emitting element 211B is arranged in the same column as the optical element 211G. In the pixel layout shown in FIG. 17E, the optical element 213R, the light-emitting element 211G, and the light-emitting element 211B are arranged repeatedly in both odd and even rows, and in each column, light-emitting elements or optical elements of different colors are arranged in the odd and even rows.

[0284] Figure 17F shows four pixels to which the Pentile arrangement is applied, with two adjacent pixels having light-emitting or light-receiving elements that emit light of two different colors. Note that Figure 17F shows the top view of the light-emitting or light-receiving element.

[0285] The upper left pixel and the lower right pixel shown in Fig. 17F have a light emitting / receiving element 213R and a light emitting element 211G. The upper right pixel and the lower left pixel have a light emitting element 211G and a light emitting element 211B. That is, in the example shown in Fig. 17F, a light emitting element 211G is provided in each pixel.

[0286] The top surface shapes of the light-emitting element and the light-receiving / light-emitting element are not particularly limited and may be circular, elliptical, polygonal, polygonal with rounded corners, etc. Figure 17F etc. shows an example in which the top surface shapes of the light-emitting element and the light-receiving / light-emitting element are squares (diamonds) tilted at approximately 45 degrees. Note that the top surface shapes of the light-emitting element and the light-receiving / light-emitting element for each color may be different from each other, or may be the same for some or all of the colors.

[0287] In addition, the sizes of the light-emitting regions (or light-receiving regions) of the light-emitting elements and light-receiving / light-emitting elements of each color may be different from each other, or may be the same for some or all of the colors. For example, in Figure 17F, the area of ​​the light-emitting region of the light-emitting element 211G provided in each pixel may be smaller than the light-emitting regions (or light-receiving / light-emitting regions) of the other elements.

[0288] Fig. 17G is a modified example of the pixel array shown in Fig. 17F. Specifically, the configuration of Fig. 17G can be obtained by rotating the configuration of Fig. 17F by 45 degrees. Although Fig. 17F has been described as having two elements per pixel, it can also be understood that one pixel is made up of four elements, as shown in Fig. 17G.

[0289] Fig. 17H is a modified example of the pixel array shown in Fig. 17F. The upper left pixel and lower right pixel shown in Fig. 17H have light-emitting / receiving elements 213R and light-emitting elements 211G. The upper right pixel and lower left pixel have light-emitting / receiving elements 213R and light-emitting elements 211B. That is, in the example shown in Fig. 17H, each pixel is provided with a light-emitting / receiving element 213R. Because each pixel is provided with a light-emitting / receiving element 213R, the configuration shown in Fig. 17H can capture images with higher resolution than the configuration shown in Fig. 17F. This can improve the accuracy of biometric authentication, for example.

[0290] FIG. 17I is a modified example of the pixel array shown in FIG. 17H, and is obtained by rotating the pixel array by 45 degrees.

[0291] In FIG. 17I, one pixel is assumed to be composed of four elements (two light-emitting elements and two light-receiving and light-emitting elements). In this way, one pixel can capture images with high resolution by including multiple light-receiving and light-emitting elements with light-receiving capabilities. This improves the accuracy of biometric authentication. For example, the image resolution can be set to the root double of the display resolution.

[0292] A display device to which the configuration shown in Figure 17H ​​or 17I is applied has p (p is an integer of 2 or more) first light-emitting elements, q (q is an integer of 2 or more) second light-emitting elements, and r (r is an integer greater than p and greater than q) light-receiving and light-emitting elements. p and r satisfy r = 2p. Furthermore, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting element emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0293] For example, when detecting a touch operation using a light-emitting / receiving element, it is preferable that the light emitted from the light source is less visible to the user. Because blue light is less visible than green light, it is preferable that a light-emitting element that emits blue light be used as the light source. Therefore, it is preferable that the light-emitting / receiving element has a function of receiving blue light. However, this is not limited to this, and the light-emitting element used as the light source can be appropriately selected depending on the sensitivity of the light-emitting / receiving element.

[0294] As described above, pixels with various arrangements can be applied to the display device of this embodiment mode.

[0295] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0296] Embodiment 4 In this embodiment, a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device) that can be used for a light-emitting and receiving device that is one embodiment of the present invention will be described.

[0297] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0298] In this specification and the like, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be combined with a colored layer (for example, a color filter) to form a full-color display device.

[0299] Light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission with a single structure, light-emitting layers can be selected that can produce white light through the emission of each of two or more light-emitting layers. For example, in the case of a two-color device, the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer can be made to have a complementary color relationship, thereby achieving a configuration in which the light-emitting device as a whole emits white light. Furthermore, when white light emission is obtained using three or more light-emitting layers, the light-emitting colors of the three or more light-emitting layers can be combined to produce white light emission as a whole.

[0300] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, with each light-emitting unit preferably including one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the luminance per given current can be increased, and the device can be made more reliable than a single-structure light-emitting device. To obtain white light emission in a tandem structure, the device can be configured to combine light from the light-emitting layers of multiple light-emitting units to obtain white light. The combination of light-emitting colors that can produce white light is the same as in the single-structure configuration. In a tandem-structure device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0301] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. If it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0302] [Device Structure] Next, detailed structures of a light-emitting element, a light-receiving element, and a light-emitting and light-emitting element that can be used in the display device of one embodiment of the present invention will be described.

[0303] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward a substrate on which a light-emitting element is formed, and a dual emission type that emits light to both sides.

[0304] In this embodiment, a top-emission display device will be described as an example.

[0305] In this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (e.g., light-emitting elements, light-emitting layers), when describing matters common to each element, the alphabet will be omitted. For example, when describing matters common to light-emitting layer 383R and light-emitting layer 383G, etc., they may be referred to as light-emitting layer 383.

[0306] The display device 380A shown in Figure 18A has a light receiving element 370PD, a light emitting element 370R that emits red (R) light, a light emitting element 370G that emits green (G) light, and a light emitting element 370B that emits blue (B) light.

[0307] Each light-emitting element has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​a light-emitting layer, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. The light-emitting element 370R has a light-emitting layer 383R, the light-emitting element 370G has a light-emitting layer 383G, and the light-emitting element 370B has a light-emitting layer 383B. The light-emitting layer 383R contains a light-emitting material that emits red light, the light-emitting layer 383G contains a light-emitting material that emits green light, and the light-emitting layer 383B contains a light-emitting material that emits blue light.

[0308] The light emitting element is an electroluminescent element that emits light toward the common electrode 375 when a voltage is applied between the pixel electrode 371 and the common electrode 375 .

[0309] The light receiving element 370PD has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order.

[0310] The light receiving element 370PD is a photoelectric conversion element that receives light incident from outside the display device 380A and converts it into an electrical signal.

[0311] In this embodiment, in both the light-emitting element and the light-receiving element, the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode. In other words, the light-receiving element is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, so that the light incident on the light-receiving element can be detected, an electric charge can be generated, and the electric charge can be extracted as a current.

[0312] In the display device of this embodiment, an organic compound is used for the active layer 373 of the light-receiving element 370PD. The layers of the light-receiving element 370PD other than the active layer 373 can be configured in common with the light-emitting element. Therefore, by simply adding a step of forming the active layer 373 to the manufacturing process of the light-emitting element, the light-receiving element 370PD can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-receiving element 370PD can be formed on the same substrate. Therefore, the light-receiving element 370PD can be built into the display device without significantly increasing the number of manufacturing steps.

[0313] The display device 380A shows an example in which the light receiving element 370PD and the light emitting element have a common configuration, except that the active layer 373 of the light receiving element 370PD and the light emitting layer 383 of the light emitting element are fabricated separately. However, the configuration of the light receiving element 370PD and the light emitting element is not limited to this. The light receiving element 370PD and the light emitting element may have layers fabricated separately from each other, in addition to the active layer 373 and the light emitting layer 383. It is preferable that the light receiving element 370PD and the light emitting element have one or more layers used in common (common layers). This allows the light receiving element 370PD to be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0314] A conductive film that transmits visible light is used for the electrode from which light is extracted, either the pixel electrode 371 or the common electrode 375. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.

[0315] The light-emitting element included in the display device of this embodiment preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes included in the light-emitting element preferably has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other preferably has an electrode that is reflective to visible light (reflective electrode). When the light-emitting element has a microcavity structure, light emitted from the light-emitting layer can be resonated between both electrodes, thereby intensifying the light emitted from the light-emitting element.

[0316] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0317] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light emitting element. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ When the light-emitting element emits near-infrared light (light having a wavelength of 750 nm or more and 1300 nm or less), the transmittance or reflectance of these electrodes for near-infrared light preferably satisfies the above-mentioned numerical range, similar to the transmittance or reflectance for visible light.

[0318] The light-emitting element has at least a light-emitting layer 383. The light-emitting element may further have, in addition to the light-emitting layer 383, a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, an electron-blocking material, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like.

[0319] For example, the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer in common, or the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer formed differently from each other.

[0320] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0321] In a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving element, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 −６ cm ２ A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0322] In a light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a light-receiving element, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a 1×10 −６ cm ２A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0323] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0324] The light-emitting layer 383 is a layer containing a light-emitting substance. The light-emitting layer 383 can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0325] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0326] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0327] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0328] The light-emitting layer 383 may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). One or both of a hole-transporting material and an electron-transporting material may be used as the one or more organic compounds. Furthermore, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0329] The light-emitting layer 383 preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material, which are a combination that easily forms an exciplex. With this structure, light emission can be efficiently obtained using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from an exciplex to a light-emitting substance (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smooth, allowing light emission to be obtained efficiently. With this structure, high efficiency, low-voltage operation, and a long lifetime of the light-emitting element can be simultaneously achieved.

[0330] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied molecular orbital level) of the hole transporting material is equal to or higher than the HOMO level of the electron transporting material. It is also preferable that the LUMO level (lowest unoccupied molecular orbital level) of the hole transporting material is equal to or higher than the LUMO level of the electron transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0331] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of the hole-transporting material, the electron-transporting material, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). That is, the formation of exciplexes can also be confirmed by comparing the transient EL of the hole-transporting material, the transient EL of the electron-transporting material, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0332] The active layer 373 includes a semiconductor. Examples of the semiconductor include an inorganic semiconductor such as silicon and an organic semiconductor including an organic compound. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 373 is shown. By using an organic semiconductor, the light-emitting layer 383 and the active layer 373 can be formed by the same method (for example, vacuum deposition), which is preferable because a common manufacturing device can be used.

[0333] The active layer 373 has an n-type semiconductor material, such as fullerene (e.g., C ６０ , C ７０Examples of electron-accepting organic semiconductor materials include fullerene derivatives and the like. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties cause charge separation quickly and efficiently, making them useful as light-receiving elements. C ６０ , C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０ In addition, as a fullerene derivative, [6,6]-phenyl-C is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region. ７１ -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C ６１ -butyric acid methyl ester (abbreviation: PC60BM), 1', 1'', 4', 4''-Tetrahydro-di [1, 4] methanonaphthaleno [1, 2: 2', 3', 56, 60: 2'', 3''] [5, 6] fullerene-C ６０ (abbreviation: ICBA) and others.

[0334] Furthermore, examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0335] An example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0336] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0337] Examples of the p-type semiconductor material of the active layer 373 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0338] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0339] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0340] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0341] For example, the active layer 373 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0342] The light-emitting element and the light-receiving element can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting element and the light-receiving element can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0343] For example, the hole transport material or electron blocking material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI). The electron transport material or hole blocking material may be an inorganic compound such as zinc oxide (ZnO), or an organic compound such as polyethyleneimine ethoxylate (PEIE). The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0344] Furthermore, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c′]dithiophene-1,3-diyl]] polymer (abbreviation: PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used for the active layer 373. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0345] A display device 380B shown in FIG. 18B differs from the display device 380A in that a light receiving element 370PD and a light emitting element 370R have the same configuration.

[0346] The light receiving element 370PD and the light emitting element 370R have in common an active layer 373 and a light emitting layer 383R.

[0347] Here, it is preferable that the light receiving element 370PD has the same configuration as a light emitting element that emits light of a longer wavelength than the light to be detected. For example, the light receiving element 370PD configured to detect blue light can have the same configuration as one or both of the light emitting element 370R and the light emitting element 370G. For example, the light receiving element 370PD configured to detect green light can have the same configuration as the light emitting element 370R.

[0348] By using a common structure for the light-receiving element 370PD and the light-emitting element 370R, the number of film-forming steps and the number of masks can be reduced compared to a structure in which the light-receiving element 370PD and the light-emitting element 370R have separate layers, thereby reducing the manufacturing steps and manufacturing costs of the display device.

[0349] Furthermore, by using a common configuration for the light receiving element 370PD and the light emitting element 370R, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 370PD and the light emitting element 370R have separate layers. This allows the pixel aperture ratio to be increased, and the light extraction efficiency of the display device to be improved. This also allows the life of the light emitting element to be extended. Furthermore, the display device can display high brightness. Furthermore, it is possible to increase the resolution of the display device.

[0350] The light-emitting layer 383R includes a light-emitting material that emits red light. The active layer 373 includes an organic compound that absorbs light with a wavelength shorter than red (for example, one or both of green light and blue light). The active layer 373 preferably includes an organic compound that does not easily absorb red light and that absorbs light with a wavelength shorter than red. This allows the light-emitting element 370R to efficiently extract red light, and the light-receiving element 370PD to detect light with a wavelength shorter than red with high accuracy.

[0351] Furthermore, in the display device 380B, an example is shown in which the light emitting element 370R and the light receiving element 370PD have the same configuration, but the light emitting element 370R and the light receiving element 370PD may have optical adjustment layers of different thicknesses.

[0352] 19A and 19B includes a light receiving / emitting element 370SR that emits red (R) light and has a light receiving function, a light emitting element 370G, and a light emitting element 370B. The configurations of the light emitting element 370G and the light emitting element 370B can refer to the display device 380A described above.

[0353] The light emitting / receiving element 370SR has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, a light emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. The light emitting / receiving element 370SR has the same configuration as the light emitting element 370R and the light receiving element 370PD exemplified in the display device 380B.

[0354] 19A shows a case where the light emitting / receiving element 370SR functions as a light emitting element. In FIG. 19A, an example is shown in which the light emitting element 370B emits blue light, the light emitting element 370G emits green light, and the light emitting / receiving element 370SR emits red light.

[0355] 19B shows a case where the light receiving / emitting element 370SR functions as a light receiving element, in which the light receiving / emitting element 370SR receives blue light emitted by the light emitting element 370B and green light emitted by the light emitting element 370G.

[0356] The light emitting element 370B, the light emitting element 370G, and the light emitting / receiving element 370SR each have a pixel electrode 371 and a common electrode 375. In this embodiment, a case will be described in which the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode. The light emitting / receiving element 370SR is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, so that the light emitting / receiving element 370SR can detect light incident on the light emitting / receiving element 370SR, generate electric charges, and extract the charges as a current.

[0357] The light-emitting / receiving element 370SR can be said to have a configuration in which an active layer 373 is added to a light-emitting element. In other words, the light-emitting / receiving element 370SR can be formed in parallel with the formation of the light-emitting element by simply adding a process for forming the active layer 373 to the manufacturing process of the light-emitting element. Furthermore, the light-emitting element and the light-emitting / receiving element can be formed on the same substrate. Therefore, it is possible to provide the display unit with either or both of an imaging function and a sensing function without significantly increasing the number of manufacturing processes.

[0358] There are no limitations on the stacking order of the light-emitting layer 383R and the active layer 373. Figures 19A and 19B show an example in which the active layer 373 is provided on the hole-transport layer 382, ​​and the light-emitting layer 383R is provided on the active layer 373. The stacking order of the light-emitting layer 383R and the active layer 373 may be reversed.

[0359] Furthermore, the light emitting / receiving element may not have at least one layer selected from the hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385. Furthermore, the light emitting / receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0360] In the light emitting / receiving element, a conductive film that transmits visible light is used for the electrode on the light extraction side, and a conductive film that reflects visible light is preferably used for the electrode on the non-light extraction side.

[0361] The functions and materials of the layers constituting the light emitting / receiving element are similar to those of the layers constituting the light emitting element and the light receiving element, and therefore detailed description thereof will be omitted.

[0362] 19C to 19G show examples of the stacked structure of the light emitting and receiving element.

[0363] The light emitting / receiving element shown in FIG. 19C has a first electrode 377 , a hole injection layer 381 , a hole transport layer 382 , a light emitting layer 383R, an active layer 373 , an electron transport layer 384 , an electron injection layer 385 , and a second electrode 378 .

[0364] FIG. 19C shows an example in which a light-emitting layer 383R is provided on a hole-transporting layer 382, ​​and an active layer 373 is stacked on the light-emitting layer 383R.

[0365] As shown in FIGS. 19A to 19C, the active layer 373 and the light-emitting layer 383R may be in contact with each other.

[0366] A buffer layer is preferably provided between the active layer 373 and the light-emitting layer 383R. In this case, the buffer layer preferably has hole-transporting and electron-transporting properties. For example, a bipolar substance is preferably used for the buffer layer. Alternatively, at least one layer selected from a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, a hole-blocking layer, and an electron-blocking layer can be used as the buffer layer. FIG. 19D shows an example in which a hole-transporting layer 382 is used as the buffer layer.

[0367] By providing a buffer layer between the active layer 373 and the light-emitting layer 383R, it is possible to suppress the transfer of excitation energy from the light-emitting layer 383R to the active layer 373. The buffer layer can also be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light-emitting / receiving element having a buffer layer between the active layer 373 and the light-emitting layer 383R can achieve high light-emitting efficiency.

[0368] 19E shows an example of a laminated structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and a light-emitting layer 383R are laminated in this order on a hole injection layer 381. The hole transport layer 382-2 functions as a buffer layer. The hole transport layer 382-1 and the hole transport layer 381-2 may contain the same material or different materials. Alternatively, a layer that can be used as the buffer layer described above may be used instead of the hole transport layer 381-2. Alternatively, the positions of the active layer 373 and the light-emitting layer 383R may be interchanged.

[0369] 19F differs from the light-emitting / receiving element shown in Fig. 19A in that it does not have the hole transport layer 382. In this way, the light-emitting / receiving element may not have at least one layer among the hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385. The light-emitting / receiving element may also have other functional layers such as a hole blocking layer or an electron blocking layer.

[0370] The light emitting / receiving device shown in FIG. 19G differs from the light emitting / receiving device shown in FIG. 19A in that it does not have an active layer 373 and a light emitting layer 383R, but has a layer 389 that serves as both a light emitting layer and an active layer.

[0371] As a layer that serves as both a light-emitting layer and an active layer, for example, a layer containing three materials: an n-type semiconductor that can be used for the active layer 373, a p-type semiconductor that can be used for the active layer 373, and a light-emitting substance that can be used for the light-emitting layer 383R can be used.

[0372] It is preferable that the lowest energy absorption band in the absorption spectrum of the mixed material of n-type and p-type semiconductors does not overlap with the maximum peak in the emission spectrum (PL spectrum) of the luminescent substance, and it is more preferable that they are sufficiently separated from each other.

[0373] In the above, an example was shown in which a common layer is provided between the light-emitting element and the light-receiving element, or between the light-emitting element and the light-receiving / light-emitting element. However, hereinafter, an example will be shown in which no common layer is provided.

[0374] A display device 380D shown in FIG. 20A is an example in which only the common electrode 375 is common among a light receiving element 370PD, a light emitting element 370R, a light emitting element 370G, and a light emitting element 370B.

[0375] The hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385 provided in the light-emitting element 370R, the light-emitting element 370G, and the light-emitting element 370B are formed in different processes, and the thickness, material, density, and the like may be different or the same for each light-emitting element.

[0376] The light-receiving element 370PD has a laminated structure including a pixel electrode 371, a hole transport layer 382, ​​an active layer 373, an electron transport layer 384, and a common electrode 375. The laminated structure is simpler than that of the display device 380A, and therefore the drive voltage of the light-receiving element 370PD can be reduced.

[0377] A display device 380E shown in FIG. 20B is an example in which a light receiving element 370PD and a light emitting element 370R have the same layered structure, and a light emitting element 370G and a light emitting element 370B have different layered structures.

[0378] A display device 380F shown in FIG. 20C is an example in which a light emitting / receiving element 370SR, a light emitting element 370G, and a light emitting element 370B have different stacked structures.

[0379] In this way, by adopting a configuration that does not use a common layer, the stacked structures of the light-emitting element, the light-receiving element, and the light-receiving / light-emitting element can be made different from one another, making it easy to individually optimize the material, thickness, density, etc. of each layer. Furthermore, by not providing a common layer between the light-emitting element and the light-receiving element, or between the light-emitting element and the light-receiving / light-emitting element, it is possible to prevent leakage current from occurring through the common layer, thereby improving the S / N ratio and enabling clearer images to be captured.

[0380] Embodiment 5 In this embodiment, an example of a display device including a light-receiving device or the like according to one embodiment of the present invention will be described.

[0381] In the display device of this embodiment, a pixel may be configured to have multiple types of subpixels having light-emitting devices that emit different colors. For example, a pixel may be configured to have three types of subpixels. Examples of the three subpixels include subpixels of three colors: red (R), green (G), and blue (B), or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel may be configured to have four types of subpixels. Examples of the four subpixels include subpixels of four colors: R, G, B, and white (W), or subpixels of four colors: R, G, B, and Y.

[0382] The arrangement of the sub-pixels is not particularly limited, and various methods can be applied, such as a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0383] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. The top surface shape of the sub-pixel here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0384] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0385] The pixel shown in FIGS. 21A, 21B, and 21C includes subpixels G, B, R, and PS.

[0386] A stripe arrangement is applied to the pixels shown in Fig. 21A, and a matrix arrangement is applied to the pixels shown in Fig. 21B.

[0387] The pixel array shown in FIG. 21C has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel S) are vertically arranged next to one subpixel (subpixel B).

[0388] The pixel shown in FIGS. 21D, 21E, and 21F has a subpixel G, a subpixel B, a subpixel R, a subpixel IR, and a subpixel PS.

[0389] 21D, 21E, and 21F show examples in which one pixel is provided across two rows, with the upper row (first row) having three subpixels (subpixels G, B, and R), and the lower row (second row) having two subpixels (one subpixel PS and one subpixel IR).

[0390] In Fig. 21D, three vertically elongated subpixels G, B, and R are arranged horizontally, with a subpixel PS and a horizontally elongated subpixel IR arranged horizontally below them. In Fig. 21E, two horizontally elongated subpixels G and R are arranged vertically, with a vertically elongated subpixel B arranged horizontally next to them, and a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. In Fig. 21F, three vertically elongated subpixels R, G, and B are arranged horizontally, with a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. Figs. 21E and 21F show cases where the area of ​​the subpixel IR is the largest and the area of ​​the subpixel PS is approximately the same as that of the other subpixels.

[0391] The layout of the sub-pixels is not limited to the configurations shown in FIGS. 21A to 21F.

[0392] Subpixel R has a light-emitting device that emits red light. Subpixel G has a light-emitting device that emits green light. Subpixel B has a light-emitting device that emits blue light. Subpixel IR has a light-emitting device that emits infrared light. Subpixel PS has a light-receiving device. There are no particular limitations on the wavelength of light detected by subpixel PS, but it is preferable that the light-receiving device of subpixel PS is sensitive to light emitted by the light-emitting device of subpixel R, subpixel G, subpixel B, or subpixel IR. For example, it is preferable to detect one or more of light in wavelength ranges such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red, and light in the infrared wavelength range.

[0393] The light-receiving area of ​​the subpixel PS is smaller than the light-emitting area of ​​the other subpixels. The smaller the light-receiving area, the narrower the imaging range, which makes it possible to suppress blurring in the imaging result and improve resolution. Therefore, by using the subpixel PS, high-definition or high-resolution imaging can be performed. For example, the subpixel PS can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), faces, etc.

[0394] The subpixel PS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). For example, the subpixel PS preferably detects infrared light, which enables touch detection even in dark places.

[0395] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). The touch sensor can detect an object when the display device and the object are in direct contact with each other. The near-touch sensor can detect an object even if the object does not touch the display device. For example, it is preferable that the display device be configured to detect the object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. This configuration makes it possible to operate the display device without the object directly touching it, in other words, to operate the display device in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0396] In order to capture high-resolution images, it is preferable that the sub-pixels PS be provided in all pixels of the display device. On the other hand, when used in a touch sensor or near-touch sensor, the sub-pixels PS do not require high accuracy compared to when capturing images of fingerprints, etc., so it is sufficient that the sub-pixels PS are provided in only some of the pixels of the display device. By making the number of sub-pixels PS in the display device smaller than the number of sub-pixels R, etc., the detection speed can be increased.

[0397] FIG. 21G shows an example of a pixel circuit of a sub-pixel having a light-receiving device, and FIG. 21H shows an example of a pixel circuit of a sub-pixel having a light-emitting device.

[0398] 21G includes a light receiving device PD, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitance element C2. Here, an example is shown in which a photodiode is used as the light receiving device PD.

[0399] The light-receiving device PD has an anode electrically connected to the wiring V1 and a cathode electrically connected to one of the source and drain of the transistor M11. The transistor M11 has a gate electrically connected to the wiring TX and the other of the source and drain electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13. The transistor M12 has a gate electrically connected to the wiring RES and the other of the source and drain electrically connected to the wiring V2. The transistor M13 has one of the source and drain electrically connected to the wiring V3 and the other of the source and drain electrically connected to one of the source and drain of the transistor M14. The transistor M14 has a gate electrically connected to the wiring SE and the other of the source and drain electrically connected to the wiring OUT1.

[0400] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When the light-receiving device PD is driven with a reverse bias, a potential higher than the potential of the wiring V1 is supplied to the wiring V2. The transistor M12 is controlled by a signal supplied to the wiring RES and has a function of resetting the potential of a node connected to the gate of the transistor M13 to the potential supplied to the wiring V2. The transistor M11 is controlled by a signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the node changes depending on the current flowing through the light-receiving device PD. The transistor M13 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M14 is controlled by a signal supplied to the wiring SE and functions as a selection transistor that reads out an output according to the potential of the node to an external circuit connected to the wiring OUT1.

[0401] 21H includes a light-emitting device EL, a transistor M15, a transistor M16, a transistor M17, and a capacitance element C3. Here, an example is shown in which a light-emitting diode is used as the light-emitting device EL. It is particularly preferable to use an organic EL element as the light-emitting device EL.

[0402] The transistor M15 has a gate electrically connected to a wiring VG, one of its source or drain electrically connected to a wiring VS, and the other of its source or drain electrically connected to one electrode of a capacitor C3 and the gate of a transistor M16. One of the source or drain of the transistor M16 is electrically connected to a wiring V4, and the other is electrically connected to an anode of a light-emitting device EL and one of the source or drain of a transistor M17. The transistor M17 has a gate electrically connected to a wiring MS, and the other of its source or drain electrically connected to a wiring OUT2. The cathode of the light-emitting device EL is electrically connected to a wiring V5.

[0403] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light-emitting device EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M15 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M16 also functions as a drive transistor that controls the current flowing through the light-emitting device EL depending on the potential supplied to its gate. When the transistor M15 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission brightness of the light-emitting device EL can be controlled depending on the potential. The transistor M17 is controlled by a signal supplied to the wiring MS and has the function of outputting the potential between the transistor M16 and the light-emitting device EL to the outside via the wiring OUT2.

[0404] Here, it is preferable to use transistors that use a metal oxide (oxide semiconductor) in a semiconductor layer in which a channel is formed for the transistors M11, M12, M13, and M14 included in the pixel circuit PIX1, and the transistors M15, M16, and M17 included in the pixel circuit PIX2.

[0405] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use a transistor including an oxide semiconductor for the transistor M11, the transistor M12, and the transistor M15, which are connected in series with the capacitor C2 or the capacitor C3. Furthermore, by using a transistor including an oxide semiconductor for other transistors as well, manufacturing costs can be reduced.

[0406] For example, the off-state current of an OS transistor per 1 μm channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１A) or less, or 1 yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0407] Alternatively, the transistors M11 to M17 may be transistors in which silicon is used as a semiconductor in which a channel is formed. In particular, using silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and higher-speed operation is possible.

[0408] Alternatively, a structure may be used in which at least one of the transistors M11 to M17 includes an oxide semiconductor and the remaining transistors include silicon.

[0409] Note that although the transistors are depicted as n-channel transistors in FIGS. 21G and 21H, p-channel transistors can also be used.

[0410] The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one region.

[0411] It is also preferable to provide one or more layers including one or both of a transistor and a capacitor at a position overlapping the light receiving device PD or the light emitting device EL, thereby reducing the effective area occupied by each pixel circuit and realizing a high-definition light receiving section or display section.

[0412] To increase the light emission luminance of the light-emitting device EL included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device EL. To achieve this, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain breakdown voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Thus, by using an OS transistor as the driving transistor included in the pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0413] Furthermore, when a transistor operates in the saturation region, an OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a larger gradation in the pixel circuit.

[0414] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, for example, even when the current-voltage characteristics of a light-emitting device containing an EL material vary. In other words, when an OS transistor operates in a saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0415] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0416] Furthermore, the display device of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 0.01 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, driving that reduces the power consumption of the display device by driving it at a reduced refresh rate may be called idling stop (IDS) driving.

[0417] The drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor may be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0418] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0419] Embodiment 6 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0420] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can easily achieve high definition, high resolution, and a large size. Therefore, the display device of one embodiment of the present invention can be used as a display portion of various electronic devices.

[0421] Furthermore, the display device of one embodiment of the present invention can be manufactured at low cost, which leads to a reduction in the manufacturing cost of electronic devices.

[0422] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0423] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display portion because it can increase the resolution. Examples of such electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, as well as head-mounted wearable devices such as VR devices and eyeglass-type AR devices. Examples of wearable devices include devices for Substitutional Reality (SR) and Mixed Reality (MR).

[0424] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K2K (3840 × 2160 pixels), or 8K4K (7680 × 4320 pixels). A resolution of 4K2K, 8K4K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device with such high resolution or high definition, it is possible to further enhance the sense of presence and depth.

[0425] The electronic device of this embodiment can be incorporated along the curved surface of the inner or outer wall of a house or building, or the interior or exterior of an automobile.

[0426] The electronic device of this embodiment may have an antenna. By receiving a signal through the antenna, images, information, and the like can be displayed on a display portion. In addition, when the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0427] The electronic device of this embodiment may have a sensor (including the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0428] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0429] The electronic device 6500 shown in FIG. 22A is a portable information terminal that can be used as a smartphone.

[0430] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0431] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0432] FIG. 22B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0433] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0434] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0435] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0436] The flexible display (flexible display device) of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0437] 23A shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0438] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0439] 23A can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0440] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0441] 23B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The housing 7211 includes a display portion 7000.

[0442] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0443] 23C and 23D show an example of digital signage.

[0444] 23C includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0445] 23D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0446] 23C and 23D, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0447] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0448] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0449] 23C and 23D , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0450] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0451] FIG. 24A is a diagram showing the appearance of the camera 8000 with the viewfinder 8100 attached.

[0452] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, and the like. A detachable lens 8006 is attached to the camera 8000. Note that the lens 8006 and the housing of the camera 8000 may be integrated together.

[0453] The camera 8000 can capture an image by pressing a shutter button 8004 or touching a display portion 8002 that functions as a touch panel.

[0454] The housing 8001 has a mount with electrodes, and can be connected to a finder 8100 as well as a strobe device and the like.

[0455] The finder 8100 includes a housing 8101, a display portion 8102, a button 8103, and the like.

[0456] The housing 8101 is attached to the camera 8000 by a mount that engages with the mount of the camera 8000. The viewfinder 8100 can display an image received from the camera 8000 on a display portion 8102.

[0457] The button 8103 has a function as a power button or the like.

[0458] The display device of one embodiment of the present invention can be applied to a display portion 8002 of a camera 8000 and a display portion 8102 of a finder 8100. Note that the camera 8000 may have a built-in finder.

[0459] FIG. 24B is a diagram showing the appearance of the head-mounted display 8200.

[0460] The head-mounted display 8200 includes a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, and a cable 8205. The mounting portion 8201 has a built-in battery 8206.

[0461] A cable 8205 supplies power from a battery 8206 to the main body 8203. The main body 8203 includes a wireless receiver or the like and can display received video information on a display portion 8204. The main body 8203 also includes a camera and can use information on the movement of the user's eyeballs or eyelids as an input means.

[0462] The wearing unit 8201 may have a plurality of electrodes at positions that come into contact with the user, capable of detecting a current that flows in accordance with the movement of the user's eyeballs, and may have a function of recognizing the line of sight. The wearing unit 8201 may also have a function of monitoring the user's pulse based on the current that flows through the electrodes. The wearing unit 8201 may also have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function of displaying biometric information of the user on the display unit 8204 and a function of changing an image displayed on the display unit 8204 in accordance with the movement of the user's head.

[0463] The display device of one embodiment of the present invention can be applied to the display portion 8204 .

[0464] 24C to 24E are diagrams showing the appearance of a head mounted display 8300. The head mounted display 8300 includes a housing 8301, a display portion 8302, a band-shaped fixture 8304, and a pair of lenses 8305.

[0465] A user can view the display on the display portion 8302 through the lens 8305. Note that it is preferable to curve the display portion 8302 because the user can feel a high sense of presence. In addition, by viewing different images displayed in different regions of the display portion 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the present invention is not limited to a configuration in which one display portion 8302 is provided, and two display portions 8302 may be provided, with one display portion provided for each eye of the user.

[0466] The display device of one embodiment of the present invention can be applied to the display portion 8302. The display device of one embodiment of the present invention can also achieve extremely high definition. For example, even when the display is enlarged and viewed using the lens 8305 as shown in FIG. 24E, the pixels are hardly visible to the user. That is, the display portion 8302 can be used to allow the user to view a highly realistic image.

[0467] 24F is a diagram showing the appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 includes a pair of housings 8401, an attachment portion 8402, and a cushioning member 8403. A display portion 8404 and a lens 8405 are provided in each of the pair of housings 8401. By displaying different images on the pair of display portions 8404, three-dimensional display using parallax can be performed.

[0468] A user can view the display portion 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism, and its position can be adjusted according to the user's eyesight. The display portion 8404 is preferably a square or a horizontally long rectangle. This can enhance the sense of realism.

[0469] The attachment portion 8402 preferably has plasticity and elasticity so that it can be adjusted according to the size of the user's face and does not slip off. Furthermore, a portion of the attachment portion 8402 preferably has a vibration mechanism that functions as a bone conduction earphone. This allows the user to enjoy video and audio simply by wearing the device, without the need for separate audio equipment such as earphones or speakers. The housing 8401 may also have a function for outputting audio data via wireless communication.

[0470] The mounting portion 8402 and the buffer member 8403 are portions that come into contact with the user's face (forehead, cheeks, etc.). The close contact of the buffer member 8403 with the user's face can prevent light leakage and enhance the sense of immersion. The buffer member 8403 is preferably made of a soft material so that it can be in close contact with the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, using a sponge or the like with its surface covered with cloth, leather (natural leather or synthetic leather), or the like can prevent gaps from forming between the user's face and the buffer member 8403, thereby effectively preventing light leakage. Furthermore, using such a material is preferable because it feels pleasant to the touch and prevents the user from feeling cold when worn in cold seasons. It is preferable that the buffer member 8403 or the mounting portion 8402, or other components that come into contact with the user's skin, are removable for easy cleaning or replacement.

[0471] The electronic device shown in Figures 25A to 25F has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of detecting, detecting, or measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, etc.

[0472] The electronic devices shown in Figures 25A to 25F have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0473] The display device of one embodiment of the present invention can be applied to the display portion 9001 .

[0474] The electronic device shown in FIGS. 25A to 25F will be described in detail below.

[0475] FIG. 25A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 25A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and the strength of antenna reception. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0476] 25B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0477] FIG. 25C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free communication by intercommunicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Charging may be performed by wireless power supply.

[0478] 25D to 25F are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 25D is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 25F is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 25E is a perspective view of a state in the process of changing from one of FIG. 25D and FIG. 25F to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0479] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0480] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0481] 100: display device, 101: substrate, 102G: transistor, 102R: transistor, 102S: transistor, 102: transistor, 103: insulating layer, 110B: light-emitting element, 110G: light-emitting element, 110R: light-emitting element, 110S: light-receiving element, 110W: light-emitting element, 110: light-emitting element, 111B: pixel electrode, 111G: pixel electrode, 111R: pixel electrode, 111S: pixel electrode, 111: pixel electrode, 112B: organic layer, 112G: organic layer, 112R: organic layer, 112W: organic layer, 112: organic layer, 113: common electrode, 114: common layer, 121: protective layer, 1 25: insulating layer, 126: resin layer, 128: layer, 130: opening, 131: insulating layer, 135: spacer, 136: light-shielding layer, 137: lens, 138: lens, 155: organic layer, 160: imaged object, 161: conductive layer, 163: planarizing layer, 170: substrate, 171: adhesive layer, 174B: colored layer, 174G: colored layer, 174R: colored layer, 181a: reflected light, 181b: reflected light, 181c: reflected light, 182: light, 200A: display panel, 200B: display panel, 200: display panel, 201: substrate, 202: substrate, 203: functional layer, 211B: light-emitting element, 211G: light-emitting element element, 211IR: light-emitting element, 211R: light-emitting element, 211W: light-emitting element, 211X: light-emitting element, 211: light-emitting element, 212: light-receiving element, 213R: light-receiving element, 220: finger, 221: contact portion, 222: fingerprint, 223: imaging range, 225: stylus, 226: trajectory, 252: transistor, 254: connection portion, 258: transistor, 259: transistor, 260: transistor, 261: insulating layer, 262: insulating layer, 265: insulating layer, 268: insulating layer, 271: conductive layer, 272a: conductive layer, 272b: conductive layer, 273: conductive layer, 275: insulating layer, 278: connection portion connection portion, 281i: channel formation region, 281n: low resistance region, 281: semiconductor layer, 292: connection layer, 294: insulating layer, 370B: light emitting element, 370G: light emitting element, 370PD: light receiving element, 370R: light emitting element, 370SR: light receiving / emitting element, 371: pixel electrode, 373: active layer, 375: common electrode, 377: first electrode, 378: second electrode, 380A: display device, 380B: display device, 380C: display device, 380D: display device, 380E: display device, 380F: display device, 381: hole injection layer, 382: hole transport layer, 383B: light emitting layer, 383G: light emitting layer,383R: light-emitting layer, 383: light-emitting layer, 384: electron transport layer, 385: electron injection layer, 389: layer, 400: display device, 411a: conductive layer, 411b: conductive layer, 411c: conductive layer, 412G: organic layer, 412S: organic layer, 413: common electrode, 414: organic layer, 416: protective layer, 417: light-shielding layer, 418: spacer, 421: insulating layer, 422: resin layer, 430b: light-emitting element, 440: light-receiving element, 442: adhesive layer, 451: substrate, 452: substrate, 455: adhesive layer, 462: display unit, 464: circuit, 465: wiring, 466: conductive layer, 472: FPC, 473: IC , 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: digital signage, 7401: pillar, 7411: information terminal, 8000: camera, 8001: housing, 8002: display unit, 8003: operation buttons, 8004: shutter button, 8006: lens, 8100: viewfinder, 8101: housing, 8102: display unit, 8103: button, 8200: head-mounted display, 8201: wearing part, 82 02: Lens, 8203: Main body, 8204: Display unit, 8205: Cable, 8206: Battery, 8300: Head mounted display, 8301: Housing, 8302: Display unit, 8304: Fixing device, 8305: Lens, 8400: Head mounted display, 8401: Housing, 8402: Mounting part, 8403: Cushioning member, 8404: Display unit, 8405: Lens, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information,9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. a first pixel electrode, a second pixel electrode, a first organic layer, a second organic layer, a common electrode, a spacer, a protective layer, and a light-shielding layer; the first organic layer is provided on the first pixel electrode; the second organic layer is provided on the second pixel electrode; the common electrode has a portion overlapping the first pixel electrode with the first organic layer interposed therebetween and a portion overlapping the second pixel electrode with the second organic layer interposed therebetween; the protective layer is provided to cover the common electrode, the spacer is transparent to visible light and has a portion overlapping the first pixel electrode with the protective layer, the common electrode, and the first organic layer interposed therebetween; the light-shielding layer is provided on the spacer and has an opening overlapping the first pixel electrode; the first organic layer includes a photoelectric conversion layer, the second organic layer includes an emitting layer; Display device.

2. In claim 1, The spacer is provided in an island shape, The light-shielding layer is provided to cover a part of the top surface and the side surfaces of the spacer. Display device.

3. In claim 1, the opening in the light-shielding layer is located inside a contour of the first pixel electrode and inside a contour of the first organic layer in a plan view; Display device.

4. In claim 1, having a lens, the lens is provided on the spacer at a position overlapping the first pixel electrode, the lens overlaps with the opening in the light-shielding layer; the light-shielding layer covers the edge of the lens; Display device.

5. In claim 1, the spacer has a function of transmitting light of a first color and absorbing light of a second color; the light-shielding layer has a function of absorbing the first color light and transmitting the second color light; Display device.

6. In claim 5, the light-shielding layer has a portion overlapping the second organic layer, the second organic layer has a function of emitting light including light of the second color; Display device.

7. In claim 6, the second organic layer has a function of emitting white light; Display device.

8. In any one of claims 1 to 7, a first insulating layer; the first insulating layer is provided to cover an end portion of the first pixel electrode and an end portion of the second pixel electrode; the first organic layer and the second organic layer each have a portion located on the first insulating layer; Display device.

9. In any one of claims 1 to 7, a first side surface of the first organic layer and a second side surface of the second organic layer are provided opposite to each other; the first organic layer has a portion where the angle formed between the first side surface and a bottom surface is 45 degrees or more and 100 degrees or less; the second organic layer has a portion where the angle formed between the second side surface and a bottom surface is 45 degrees or more and 100 degrees or less; Display device.

10. In claim 9, a second insulating layer; the second insulating layer has a portion in contact with the first side surface and a portion in contact with the second side surface, the second insulating layer includes an inorganic insulating film; Display device.

11. In claim 10, having a resin layer, the resin layer has a portion overlapping the first organic layer with the second insulating layer interposed therebetween and a portion overlapping the second organic layer with the second insulating layer interposed therebetween; the common electrode has a portion located on the resin layer; Display device.

12. In claim 11, the spacer has a portion located on the resin layer; Display device.