Semiconductor device, electric power conversion unit and method for manufacturing semiconductor device

Abstract

This semiconductor device comprises a first semiconductor element, a second semiconductor element, a support substrate, and an encapsulating resin, the semiconductor device further comprising a heat radiation member that is located on a rear surface. The heat radiation member includes a plurality of first protruding elements, each having a first base portion, a second base portion, a first raised portion, a second raised portion, and a first tip portion. The plurality of first protruding elements are arranged in a matrix along a plane that includes a first direction and a second direction.

Description

Semiconductor device, power conversion unit, and method of manufacturing the semiconductor device

[0001] The present disclosure relates to a semiconductor device, a power conversion unit, and a method for manufacturing a semiconductor device.

[0002] Conventionally, semiconductor devices including power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. Such semiconductor devices are installed in a wide variety of electronic devices, from industrial equipment to home appliances, information terminals, and automotive equipment. Patent Document 1 (Patent Document 1) discloses a conventional semiconductor device (power module). The semiconductor device described in Patent Document 1 includes a semiconductor element and a support substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of silicon (Si). The support substrate supports the semiconductor element. The support substrate includes an insulating base material and conductor layers laminated on both sides of the base material. The base material is, for example, made of ceramic. Each conductor layer is, for example, made of copper (Cu), and a semiconductor element is bonded to one of the conductor layers. The semiconductor element is covered, for example, with a sealing resin.

[0003] Japanese Patent Application Laid-Open No. 2021-190505

[0004] When a power module is in operation, the semiconductor elements generate heat. For the power module to operate properly, it is preferable to quickly dissipate the heat from the semiconductor elements to the outside.

[0005] An object of the present disclosure is to provide an improved semiconductor device, a power conversion unit, and a method for manufacturing the semiconductor device. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device, a power conversion unit, and a method for manufacturing the semiconductor device that are capable of dissipating heat more quickly.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising a semiconductor element, a support substrate supporting the semiconductor element, and a sealing resin covering the semiconductor element and a portion of the support substrate. The support substrate has a main surface facing a first side in a thickness direction and a back surface facing a second side and exposed from the sealing resin. The semiconductor element is mounted on the main surface and further comprises a heat dissipation member disposed on the back surface. The heat dissipation member includes a plurality of first convex elements, each having a first base portion, a second base portion, a first raised portion, a second raised portion, and a first tip portion. The first base portion and the second base portion are spaced apart from each other in a first direction perpendicular to the thickness direction and are each bonded to the back surface. The first tip portion is located between the first base portion and the second base portion in the first direction and is located on the second side of the first base portion and the second base portion in the thickness direction. The first raised portion is connected to the first base portion and the first tip portion. The second upright portion is connected to the second base portion and the first tip portion. The first convex elements are arranged in a matrix along a plane including the first direction, the thickness direction, and a second direction perpendicular to the first direction.

[0007] A power conversion unit according to a second aspect of the present disclosure includes the semiconductor device according to the first aspect of the present disclosure and a cooling device disposed on the second side in the thickness direction of the semiconductor device, the cooling device having a housing that houses the heat dissipation member and through which a cooling medium flows.

[0008] A third aspect of the present disclosure provides a method for manufacturing a semiconductor device, comprising the steps of: forming a heat dissipation member using a metal plate material; and arranging the heat dissipation member on a back surface of a support substrate. The step of forming the heat dissipation member includes a process of forming a plurality of cutting lines along a first direction that is a direction perpendicular to a thickness direction of the metal plate material; and a process of deforming portions of the metal plate material that are sandwiched between adjacent cutting lines in a second direction that is perpendicular to the thickness direction and the first direction, into a shape that protrudes in the thickness direction, thereby forming a plurality of first convex portions.

[0009] According to the above configuration, it is possible to dissipate heat from the semiconductor element more quickly.

[0010] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0011] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a partial side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a partial enlarged plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 9 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 10 is a side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 11 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 5. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 5. FIG. 14 is a partial enlarged cross-sectional view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 15 is a partial enlarged cross-sectional view showing a semiconductor device according to a first embodiment of the present disclosure. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 5. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 5. FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 5. FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 5. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 5. FIG. 21 is a partial perspective view showing a heat dissipation member of a semiconductor device according to a first embodiment of the present disclosure. FIG. 22 is a partial plan view showing a heat dissipation member of a semiconductor device according to a first embodiment of the present disclosure. FIG. 23 is a partial cross-sectional view taken along line XXIII-XXIII in FIG. 22. FIG. 24 is a partial cross-sectional view taken along line XXIV-XXIV in FIG. 22. FIG. 25 is a partial cross-sectional view taken along line XXV-XXV in FIG. 22. FIG. 26 is a partial cross-sectional view taken along line XXVI-XXVI in FIG. 22. 27A is a partial front view of the heat dissipation member of the semiconductor device according to the first embodiment of the present disclosure, (b) is a partial cross-sectional view of the metal plate material, and (c) is a partial plan view of the metal plate material. 28A is a partial perspective view of the heat dissipation member of the semiconductor device according to the first embodiment of the present disclosure, and (b) to (d) are perspective views showing the bonding plane.FIG. 29 is a cross-sectional view showing a power conversion unit according to the first embodiment of the present disclosure. FIG. 30 is a cross-sectional view showing a power conversion unit according to the first embodiment of the present disclosure. FIG. 31 is a partial perspective view showing a heat dissipation member of a semiconductor device according to a second embodiment of the present disclosure. FIG. 32 is a partial plan view showing a heat dissipation member of a semiconductor device according to the second embodiment of the present disclosure. FIG. 33 is a partial cross-sectional view taken along line XXXIII-XXXIII of FIG. 32. FIG. 34 is a partial cross-sectional view taken along line XXXIV-XXXIV of FIG. 32. FIG. 35 is a partial cross-sectional view taken along line XXXV-XXXV of FIG. 32. FIG. 36 is a partial cross-sectional view taken along line XXXVI-XXXVI of FIG. 32. FIG. 37 is a partial perspective view showing a heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure. FIG. 38 is a partial plan view showing a heat dissipation member of a semiconductor device according to the third embodiment of the present disclosure. FIG. 39 is a partial cross-sectional view taken along line XXXIX-XXXIX of FIG. 38. 40 is a partial cross-sectional view taken along line XL-XL in FIG. 38 . FIG. 41 is a partial cross-sectional view taken along line XLI-XLI in FIG. 38 . FIG. 42 is a partial cross-sectional view taken along line XLII-XLII in FIG. 38 . FIG. 43 is a partial perspective view showing a heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure. FIG. 44 is a partial plan view showing a heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure. FIG. 45 is a partial cross-sectional view taken along line XLV-XLV in FIG. 44 . FIG. 46 is a partial cross-sectional view taken along line XLVI-XLVII in FIG. 44 . FIG. 47 is a partial cross-sectional view taken along line XLVII-XLVIII in FIG. 44 . FIG. 48 is a partial cross-sectional view taken along line XLVIII-XLVIII in FIG. 44 .

[0012] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0013] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0014] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0015] 1 to 30 show a semiconductor device and a power conversion unit according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a heat dissipation member 2, a support substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, a fourth terminal 44, a plurality of control terminals 45, a control terminal support 48, a first conductive member 5, a second conductive member 6, and a sealing resin 8.

[0016] 1 and 2 are perspective views showing the semiconductor device A1. FIG. 3 is a partial perspective view showing the semiconductor device A1. FIG. 4 is a plan view showing the semiconductor device A1. FIG. 5 is a partial plan view showing the semiconductor device A1. FIG. 6 is a partial side view showing the semiconductor device A1. FIG. 7 is a partial enlarged plan view showing the semiconductor device A1. FIGS. 8 and 9 are partial plan views showing the semiconductor device A1. FIG. 10 is a side view showing the semiconductor device A1. FIG. 11 is a bottom view showing the semiconductor device A1. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 5. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 5. FIGS. 14 and 15 are partial enlarged cross-sectional views showing the semiconductor device A1. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 5. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 5. FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 5. 19 is a cross-sectional view taken along line XX-XX in FIG. 5. FIG. 20 is a cross-sectional view taken along line XXI-XXI in FIG. 5. FIG. 21 is a partial perspective view showing the heat dissipation member 2 of the semiconductor device A1. FIG. 22 is a partial plan view showing the heat dissipation member 2 of the semiconductor device A1. FIG. 23 is a partial cross-sectional view taken along line XXIII-XXIII in FIG. 22. FIG. 24 is a partial cross-sectional view taken along line XXIV-XXIV in FIG. 22. FIG. 25 is a partial cross-sectional view taken along line XXIV-XXIV in FIG. 22. FIG. 26 is a partial cross-sectional view taken along line XXVI-XXVI in FIG. 22. FIG. 27(a) is a partial front view of the heat dissipation member 2 of the semiconductor device A1, (b) is a partial cross-sectional view of the metal plate material, and (c) is a partial plan view of the metal plate material. 28A is a partial perspective view of the heat dissipation member 2 of the semiconductor device A1, and FIGS. 28B to 28D are perspective views showing the joining plane. FIGS. 29 and 30 are cross-sectional views showing the power conversion unit B1.

[0017] In these figures, one side in the first direction x is referred to as the x1 side of the first direction x, and the other side in the first direction x is referred to as the x2 side of the first direction x. Furthermore, one side in the second direction y is referred to as the y1 side of the second direction y, and the other side in the second direction y is referred to as the y2 side of the second direction y. Furthermore, one side in the thickness direction z is referred to as the z1 side of the thickness direction z, and the other side in the thickness direction z is referred to as the z2 side of the thickness direction z.

[0018] First semiconductor element 10A, second semiconductor element 10B: The multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B are electronic components that are the core of the semiconductor device A1's functionality. The constituent material of each first semiconductor element 10A and each second semiconductor element 10B is a semiconductor material primarily composed of, for example, silicon carbide (SiC). This semiconductor material is not limited to SiC and may be silicon (Si), gallium nitride (GaN), diamond (C), or other materials. Each first semiconductor element 10A and each second semiconductor element 10B is a power semiconductor chip with switching function, such as a metal oxide semiconductor field effect transistor (MOSFET). While this embodiment illustrates a case in which the first semiconductor element 10A and the second semiconductor element 10B are MOSFETs, they are not limited thereto and may be other transistors such as insulated gate bipolar transistors (IGBTs). Each first semiconductor element 10A and each second semiconductor element 10B are the same element. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.

[0019] 14 and 15 , the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102. In each of the first semiconductor elements 10A and the second semiconductor elements 10B, the element main surface 101 and the element back surface 102 are spaced apart in the thickness direction z. The element main surface 101 faces the z1 side in the thickness direction z, and the element back surface 102 faces the z2 side in the thickness direction z.

[0020] In this embodiment, the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B. However, the number of first semiconductor elements 10A and the number of second semiconductor elements 10B are not limited to this configuration and may be changed as appropriate depending on the performance required of the semiconductor device A1. In the example shown in FIGS. 8 and 9, four first semiconductor elements 10A and four second semiconductor elements 10B are arranged. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be two, three, or five or more. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be equal to or different from each other. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B is determined by the current capacity handled by the semiconductor device A1.

[0021] The semiconductor device A1 is configured, for example, as a half-bridge switching circuit. In this case, a plurality of first semiconductor elements 10A form an upper arm circuit of the semiconductor device A1, and a plurality of second semiconductor elements 10B form a lower arm circuit. In the upper arm circuit, the plurality of first semiconductor elements 10A are connected in parallel with each other, and in the lower arm circuit, the plurality of second semiconductor elements 10B are connected in parallel with each other. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridge layer.

[0022] As shown in FIGS. 8 , 9 , and 19 , each of the multiple first semiconductor elements 10A is mounted on a first conductive portion 32A of a support substrate 3 (described later). In the example shown in FIGS. 8 and 9 , the multiple first semiconductor elements 10A are aligned, for example, in the second direction y and spaced apart from one another. Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via a first conductive bonding material 19A. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the element back surface 102 faces the first conductive portion 32A. Unlike the present embodiment, the multiple first semiconductor elements 10A may be mounted on a metal member other than a part of the DBC substrate, etc. In this case, the metal member corresponds to the first conductive portion in the present disclosure. This metal member may be supported by, for example, the first conductive portion 32A.

[0023] As shown in FIGS. 8 , 9 , and 18 , each of the second semiconductor elements 10B is mounted on a second conductive portion 32B of a support substrate 3 (described later). In the example shown in FIGS. 8 and 9 , the second semiconductor elements 10B are aligned, for example, in the second direction y and spaced apart from one another. Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via a second conductive bonding material 19B. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the element back surface 102 faces the second conductive portion 32B. As can be seen from FIG. 9 , the first semiconductor elements 10A and the second semiconductor elements 10B overlap when viewed in the first direction x, but they do not necessarily need to overlap. Unlike the present embodiment, the second semiconductor elements 10B may be mounted on a metal member other than a part of the DBC substrate, etc. In this case, the metal member corresponds to the second conductive portion in this disclosure. This metal member may be supported by, for example, the second conductive portion 32B.

[0024] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B each have a first principal surface electrode 11, a second principal surface electrode 12, a third principal surface electrode 13, and a back surface electrode 15. The configurations of the first principal surface electrode 11, the second principal surface electrode 12, the third principal surface electrode 13, and the back surface electrode 15 described below are common to each of the first semiconductor elements 10A and each of the second semiconductor elements 10B. The first principal surface electrode 11, the second principal surface electrode 12, and the third principal surface electrode 13 are provided on the element main surface 101. The first principal surface electrode 11, the second principal surface electrode 12, and the third principal surface electrode 13 are insulated by an insulating film (not shown). The back surface electrode 15 is provided on the element back surface 102.

[0025] The first principal surface electrode 11 is, for example, a gate electrode, to which a drive signal (for example, a gate voltage) for driving the first semiconductor element 10A (second semiconductor element 10B) is input. In the first semiconductor element 10A (second semiconductor element 10B), the second principal surface electrode 12 is, for example, a source electrode, through which a source current flows. The second principal surface electrode 12 of this embodiment has a gate finger 121. The gate finger 121 is, for example, made of a linear insulator extending in the first direction x, and divides the second principal surface electrode 12 into two parts in the second direction y. The third principal surface electrode 13 is, for example, a source sense electrode, through which a source current flows. The back surface electrode 15 is, for example, a drain electrode, through which a drain current flows. The back surface electrode 15 covers substantially the entire area of ​​the element back surface 102. The back surface electrode 15 is, for example, formed by Ag (silver) plating.

[0026] When a drive signal (gate voltage) is input to the first principal surface electrode 11 (gate electrode), each first semiconductor element 10A (each second semiconductor element 10B) switches between a conductive state and a non-conductive state in response to the drive signal. In the conductive state, current flows from the back surface electrode 15 (drain electrode) to the second principal surface electrode 12 (source electrode), and in the non-conductive state, current does not flow. In other words, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation. The semiconductor device A1 converts a DC voltage input between the single fourth terminal 44 and the two first and second terminals 41 and 42 into, for example, an AC voltage, and outputs the AC voltage from the third terminal 43, using the switching functions of the multiple first semiconductor elements 10A and multiple second semiconductor elements 10B.

[0027] 5, 8, 9, etc., the semiconductor device A1 includes a thermistor 17. The thermistor 17 is used as a temperature detection sensor. Note that the semiconductor device A1 may include, for example, a temperature-sensitive diode in addition to the thermistor 17, or may not include the thermistor 17.

[0028] Support substrate 3: The support substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The specific configuration of the support substrate 3 is not limited in any way, and may be, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a first metal layer 32, and a back surface metal layer 33. The first metal layer 32 includes a first conductive portion 32A and a second conductive portion 32B. The dimension of the support substrate 3 in the thickness direction z is, for example, not less than 0.4 mm and not more than 3.0 mm.

[0029] The insulating layer 31 is made of, for example, ceramics with excellent thermal conductivity. Examples of such ceramics include SiN (silicon nitride). The insulating layer 31 is not limited to ceramics and may be an insulating resin sheet or the like. The insulating layer 31 has, for example, a rectangular shape in a plan view. The dimension of the insulating layer 31 in the thickness direction z is, for example, 0.05 mm or more and 1.0 mm or less.

[0030] The first conductive portion 32A supports a plurality of first semiconductor elements 10A, and the second conductive portion 32B supports a plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface of the insulating layer 31 (the surface facing the z1 side in the thickness direction z). The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). The constituent material may include, for example, Al (aluminum) other than Cu (copper). The first conductive portion 32A and the second conductive portion 32B are spaced apart in the first direction x. The first conductive portion 32A is located on the x1 side of the second conductive portion 32B in the first direction x. The first conductive portion 32A and the second conductive portion 32B each have, for example, a rectangular shape in a plan view. The first conductive portion 32A and the second conductive portion 32B, together with the first conductive member 5 and the second conductive member 6, constitute a path of the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.

[0031] The first conductive portion 32A has a first main surface 301A. The first main surface 301A is a flat surface facing the z1 side in the thickness direction z. A plurality of first semiconductor elements 10A are bonded to the first main surface 301A of the first conductive portion 32A via first conductive bonding materials 19A. The second conductive portion 32B has a second main surface 301B. The second main surface 301B is a flat surface facing the z1 side in the thickness direction z. A plurality of second semiconductor elements 10B are bonded to the second main surface 301B of the second conductive portion 32B via second conductive bonding materials 19B. The constituent materials of the first conductive bonding material 19A and the second conductive bonding material 19B are not particularly limited and may be, for example, solder, a metal paste material containing a metal such as Ag (silver), or a sintered metal containing a metal such as Ag (silver). The dimension of first conductive portion 32A and second conductive portion 32B in thickness direction z is, for example, not less than 0.1 mm and not more than 1.5 mm.

[0032] The back surface metal layer 33 is formed on the lower surface (surface facing the z2 side in the thickness direction z) of the insulating layer 31. The constituent material of the back surface metal layer 33 is the same as the constituent material of the first metal layer 32. The back surface metal layer 33 has a back surface 302. The back surface 302 is a flat surface facing the z2 side in the thickness direction z. The back surface 302 is exposed from the sealing resin 8. In a plan view, the back surface metal layer 33 overlaps both the first conductive portion 32A and the second conductive portion 32B.

[0033] Heat dissipation member 2: As shown in FIGS. 2, 6, 10 to 13, and 16 to 26, the heat dissipation member 2 is disposed on the back surface 302 of the back surface metal layer 33 of the support substrate 3. The heat dissipation member 2 includes a plurality of first convex portions 21. The heat dissipation member 2 of this embodiment further includes a plurality of second convex portions 22. For convenience of explanation, FIGS. 21 to 26 show only a portion of the heat dissipation member 2. The material of the heat dissipation member 2 is not limited in any way, and the heat dissipation member 2 may be formed, for example, using a metal plate material. The metal plate material may include, for example, metals such as Cu (copper), Al (aluminum), and stainless steel, or alloys thereof.

[0034] Each of the multiple first convex portions 21 has a shape that protrudes toward the z2 side in the thickness direction z. The multiple first convex portions 21 are arranged in a matrix along a plane that includes the first direction x and the second direction y. In the present disclosure, a matrix arrangement refers to an arrangement with a certain regularity along the plane, including an arrangement in a lattice pattern along each of the first direction x and the second direction y, or an arrangement in a so-called staggered pattern.

[0035] Each of the second convex portions 22 has a shape that protrudes toward the z2 side in the thickness direction z. The second convex portions 22 are arranged in a matrix along a plane that includes the first direction x and the second direction y. The matrix arrangement of the second convex portions 22 is based on the same concept as the matrix arrangement of the first convex portions 21.

[0036] The first convex portion 21 has a first base portion 211 , a second base portion 212 , a first upright portion 213 , a second upright portion 214 and a first tip portion 215 .

[0037] The first base portion 211 and the second base portion 212 are spaced apart from each other in the x direction. In this embodiment, the first base portion 211 and the second base portion 212 of the first convex portion 21 adjacent to each other in the first direction x are connected to each other and form an integrated part. The shapes of the first base portion 211 and the second base portion 212 are not limited in any way, and in this embodiment, they are elongated rectangular shapes with the second direction y as the longitudinal direction when viewed in the thickness direction z.

[0038] The first base portion 211 and the second base portion 212 are each bonded to the back surface 302. The method for bonding the first base portion 211 and the second base portion 212 is not limited in any way, and may be appropriately selected from welding methods such as laser welding, methods using a bonding layer such as an adhesive or solder, ultrasonic bonding, solid-state diffusion bonding, and the like. In this embodiment, the first base portion 211 and the second base portion 212 are bonded to the back surface 302 by laser welding. As a result, multiple welds M are formed by portions of the first base portion 211 and the second base portion 212 and the back surface 302 (back surface metal layer 33). In the illustrated example, two welds M are formed at the portion where one first base portion 211 and one second base portion 212 are connected. The two welds M are aligned in the second direction y.

[0039] The first tip portion 215 is located between the first base portion 211 and the second base portion 212 in the first direction x. The first tip portion 215 is located on the z2 side of the first base portion 211 and the second base portion 212 in the thickness direction z. The first tip portion 215 in this embodiment has a flat plate shape. The shape of the first tip portion 215 is not limited in any way and is an elongated rectangle with the second direction y as the longitudinal direction when viewed in the thickness direction z.

[0040] The first upright portion 213 is connected to the first base portion 211 and the first tip portion 215. More specifically, the first upright portion 213 is connected to the edge of the first base portion 211 on the x2 side in the first direction x and the edge of the first tip portion 215 on the x1 side in the first direction x. The shape of the first upright portion 213 is not limited in any way, and in this embodiment, it is rectangular when viewed in the first direction x.

[0041] The second upright portion 214 is connected to the second base portion 212 and the first tip portion 215. More specifically, the second upright portion 214 is connected to the edge of the second base portion 212 on the x1 side in the first direction x and the edge of the first tip portion 215 on the x2 side in the first direction x. The shape of the second upright portion 214 is not limited in any way, and in this embodiment, it is rectangular when viewed in the first direction x.

[0042] There is no limitation on the size of each part of the first convex portion 21. In this embodiment, the size of the first convex portion 21 in the thickness direction z is greater than the distance between the first upright portion 213 and the second upright portion 214 in the first direction x.

[0043] The second convex portion 22 has a third base portion 221 , a fourth base portion 222 , a third upright portion 223 , a fourth upright portion 224 and a second tip portion 225 .

[0044] The third base portion 221 and the fourth base portion 222 are spaced apart from each other in the x direction. In this embodiment, the third base portion 221 and the fourth base portion 222 of the second convex portion 22 that are adjacent to each other in the first direction x are connected to each other and form an integrated part. The shapes of the third base portion 221 and the fourth base portion 222 are not limited in any way, and in this embodiment, they are elongated rectangular shapes with the second direction y as the longitudinal direction when viewed in the thickness direction z.

[0045] The third base portion 221 and the fourth base portion 222 are connected to the first tip portions 215 of the first convex portions 21. More specifically, the third base portion 221 and the fourth base portion 222 are located between the first tip portions 215 of the first convex portions 21 adjacent to each other in the second direction y, and are connected to these first tip portions 215. The positions of the third base portion 221 and the fourth base portion 222 in the thickness direction z are the same as (or approximately the same as) the first tip portions 215. That is, in this embodiment, the third base portions 221 and the fourth base portions 222 of the multiple second convex portions 22 and the first tip portions 215 of the multiple first convex portions 21 are connected to form a strip-shaped portion extending in the second direction y.

[0046] The second tip portion 225 is located between the third base portion 221 and the fourth base portion 222 in the first direction x. The second tip portion 225 is located closer to the z2 side than the third base portion 221 and the fourth base portion 222 in the thickness direction z. The second tip portion 225 in this embodiment is flat. The shape of the second tip portion 225 is not particularly limited, and is an elongated rectangle with the second direction y as the longitudinal direction when viewed in the thickness direction z. The second tip portion 225 is located between the first base portion 211 and the second base portion 212 of the first convex portion 21 that are adjacent to each other in the second direction y when viewed in the thickness direction z.

[0047] The third upright portion 223 is connected to the third base portion 221 and the second tip portion 225. More specifically, the third upright portion 223 is connected to the edge of the third base portion 221 on the x2 side in the first direction x and the edge of the second tip portion 225 on the x1 side in the first direction x. The shape of the third upright portion 223 is not limited in any way, and in this embodiment, it is rectangular when viewed in the first direction x.

[0048] The fourth upright portion 224 is connected to the fourth base portion 222 and the second tip portion 225. More specifically, the fourth upright portion 224 is connected to the edge of the fourth base portion 222 on the x1 side in the first direction x and the edge of the second tip portion 225 on the x2 side in the first direction x. The shape of the fourth upright portion 224 is not limited in any way, and in this embodiment, it is rectangular when viewed in the first direction x.

[0049] The size of each portion of the second convex portion 22 is not limited in any way. In this embodiment, the size of the second convex portion 22 in the thickness direction z is greater than the distance in the first direction x between the third upright portion 223 and the fourth upright portion 224. Also, in this embodiment, the size of the second convex portion 22 in the thickness direction z is the same (or approximately the same) as the size of the first convex portion 21 in the thickness direction z. However, the size of the first convex portion 21 in the thickness direction z and the size of the second convex portion 22 in the thickness direction z may be different from each other.

[0050] 27A and 27B show a step of forming a heat dissipation member 2 in an example of a manufacturing method for a semiconductor device A1. FIG. 27A shows a part of the heat dissipation member 2, and FIGS. 27B and 27C show a metal plate material 20 used to form the part of the heat dissipation member 2 shown in FIG. 27A. FIG. 27C is a plan view of the metal plate material 20. A plurality of cutting lines 201 are formed in the metal plate material 20. FIG. 27B is a zx cross-sectional view including the cutting lines 201.

[0051] The cutting lines 201 penetrate the metal plate material 20 in the thickness direction z. The cutting lines 201 extend in the first direction x and are linear in this embodiment. The multiple cutting lines 201 are arranged in a matrix along the xy plane.

[0052] The region of the metal plate material 20 located between adjacent cutting lines 201 in the first direction x is the region that becomes the first tip portion 215 or the third base portion 221 and the fourth base portion 222. The region of the metal plate material 20 located between adjacent cutting lines 201 in the second direction y is the region that becomes the first base portion 211, the second base portion 212, the first upright portion 213 and the second upright portion 214, or the region that becomes the third upright portion 223, the fourth upright portion 224 and the second tip portion 225.

[0053] The metal plate material 20 is bent in areas that will become the first base portion 211, the second base portion 212, the first upright portion 213, and the second upright portion 214, causing them to protrude toward the z1 side in the thickness direction z, thereby forming a plurality of first convex portions 21. Furthermore, the metal plate material 20 is bent in areas that will become the third upright portion 223, the fourth upright portion 224, and the second tip portion 225, causing them to protrude toward the z2 side in the thickness direction z, thereby forming a plurality of second convex portions 22. This bending process transforms the metal plate material 20 shown in FIG. 1B into the heat dissipation member 2 shown in FIG. 1A. As can be seen from FIGS. 1A and 1B, when the metal plate material 20 is bent, it shrinks in the first direction x, becoming the heat dissipation member 2. That is, the size of the heat dissipation member 2 in the first direction x is smaller than the size of the metal plate material 20 in the first direction x before the bending process.

[0054] After the heat dissipation member 2 is formed, a step of disposing the heat dissipation member 2 on the rear surface 302 of the support substrate 3 is performed. In this step, the plurality of first base portions 211 and second base portions 212 of the heat dissipation member 2 are joined to the rear surface 302 by, for example, laser welding. As a result, there is no joining layer or the like between the heat dissipation member 2 and the rear surface 302, and the heat dissipation member 2 and the rear surface 302 are in direct contact with each other.

[0055] First terminal 41, second terminal 42, third terminal 43, fourth terminal 44: The first terminal 41, second terminal 42, the plurality of third terminals 43, and fourth terminal 44 are each made of a plate-shaped metal plate. This metal plate contains, for example, Cu (copper) or a Cu (copper) alloy. In the examples shown in Figures 1 to 5, 8, 9, and 11, the semiconductor device A1 includes one each of the first terminal 41, second terminal 42, and fourth terminal 44, and two third terminals 43, but the number of each terminal is not limited in any way.

[0056] A DC voltage to be converted into power is input to the first terminal 41, the second terminal 42, and the fourth terminal 44. The fourth terminal 44 is a positive electrode (P terminal), and the first terminal 41 and the second terminal 42 are each a negative electrode (N terminal). An AC voltage converted into power by the first semiconductor element 10A and the second semiconductor element 10B is output from the plurality of third terminals 43. The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 each include a portion covered with the sealing resin 8 and a portion exposed from the sealing resin 8.

[0057] As shown in FIG. 13 , the fourth terminal 44 is conductively bonded to the first conductive portion 32A. The method of conductive bonding is not limited, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, sintered silver, etc. may be appropriately adopted. As shown in FIGS. 8 and 9 , the fourth terminal 44 is located on the x1 side in the first direction x with respect to the multiple first semiconductor elements 10A and the first conductive portions 32A. The fourth terminal 44 is conductively connected to the first conductive portion 32A and, via the first conductive portion 32A, to the back surface electrode 15 (drain electrode) of each first semiconductor element 10A.

[0058] The first terminal 41 and the second terminal 42 are electrically connected to the second conductive member 6. In this embodiment, the first terminal 41 and the second conductive member 6 are integrally formed. The term "integrally formed" refers to a configuration in which the first terminal 41 and the second conductive member 6 are formed, for example, by cutting and bending a single metal plate material, without using any bonding material to join them. Furthermore, in this embodiment, the second terminal 42 and the second conductive member 6 are integrally formed. Note that the first terminal 41 and the second terminal 42 may be configured to be electrically connected to the second conductive member 6, and may have a bonding portion to join them, unlike this embodiment. As shown in FIGS. 5 and 8 , the first terminal 41 and the second terminal 42 are each located on the x1 side in the first direction x with respect to the multiple first semiconductor elements 10A and the first conductive portion 32A. The first terminal 41 and the second terminal 42 are each electrically connected to the second conductive member 6 and, via the second conductive member 6, to the second principal surface electrode 12 (source electrode) of each second semiconductor element 10B.

[0059] As shown in FIGS. 1 to 5 and 11 , the first terminal 41, the second terminal 42, and the fourth terminal 44 each protrude from the sealing resin 8 toward the x1 side in the first direction x in the semiconductor device A1. The first terminal 41, the second terminal 42, and the fourth terminal 44 are spaced apart from one another. The first terminal 41 and the second terminal 42 are located on opposite sides of the fourth terminal 44 in the second direction y. The first terminal 41 is located on the y1 side of the fourth terminal 44 in the second direction y, and the second terminal 42 is located on the y2 side of the fourth terminal 44 in the second direction y. The first terminal 41, the second terminal 42, and the fourth terminal 44 overlap one another when viewed in the second direction y.

[0060] As can be seen from FIGS. 8 , 9 , and 12 , the two third terminals 43 are each conductively bonded to the second conductive portion 32B. The conductive bonding method is not limited to any particular method, and methods such as ultrasonic bonding, laser bonding, and welding, or methods using solder, metal paste, silver sintered body, etc., may be appropriately employed. As shown in FIG. 8 and other figures, the two third terminals 43 are each located on the x2 side of the second semiconductor elements 10B and the second conductive portions 32B in the first direction x. Each third terminal 43 is conductively connected to the second conductive portion 32B and, via the second conductive portion 32B, to the back electrode 15 (drain electrode) of each second semiconductor element 10B. The number of third terminals 43 is not limited to two and may be, for example, one or three or more. For example, when there is one third terminal 43, it is preferably connected to the center portion of the second conductive portion 32B in the second direction y.

[0061] The plurality of control terminals 45 are pin-shaped terminals for controlling each of the first semiconductor elements 10A and each of the second semiconductor elements 10B. The plurality of control terminals 45 include a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D. The plurality of first control terminals 46A to 46E are used to control each of the first semiconductor elements 10A, etc. The plurality of second control terminals 47A to 47D are used to control each of the second semiconductor elements 10B, etc.

[0062] First control terminals 46A-46E: The multiple first control terminals 46A-46E are arranged at intervals in the second direction y. As shown in FIGS. 8, 13, 20, etc., each of the first control terminals 46A-46E is supported by the first conductive portion 32A via a control terminal support body 48 (a first support portion 48A described below). As shown in FIGS. 5 and 8, each of the first control terminals 46A-46E is located between the multiple first semiconductor elements 10A and the first terminal 41, the second terminal 42, and the fourth terminal 44 in the first direction x.

[0063] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal for the plurality of first semiconductor elements 10A. A drive signal for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A (for example, a gate voltage is applied).

[0064] The first control terminal 46B is a terminal (source sense terminal) for detecting source signals of the multiple first semiconductor elements 10A. The first control terminal 46B detects a voltage (a voltage corresponding to a source current) applied to each second principal surface electrode 12 (source electrode) of the multiple first semiconductor elements 10A.

[0065] The first control terminal 46C and the first control terminal 46D are terminals that are electrically connected to the thermistor 17.

[0066] The first control terminal 46E is a terminal (drain sense terminal) for detecting drain signals of the multiple first semiconductor elements 10A. The first control terminal 46E detects a voltage (a voltage corresponding to a drain current) applied to each back electrode 15 (drain electrode) of the multiple first semiconductor elements 10A.

[0067] The second control terminals 47A to 47D are arranged at intervals in the second direction y. As shown in FIGS. 8 and 13 , each of the second control terminals 47A to 47D is supported by the second conductive portion 32B via a control terminal support 48 (a second support portion 48B described below). As shown in FIGS. 5 and 8 , each of the second control terminals 47A to 47D is located between the second semiconductor elements 10B and two third terminals 43 in the first direction x.

[0068] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals for the multiple second semiconductor elements 10B. A drive signal for driving the multiple second semiconductor elements 10B is input to the second control terminal 47A (for example, a gate voltage is applied). The second control terminal 47B is a terminal (source sense terminal) for detecting source signals for the multiple second semiconductor elements 10B. The second control terminal 47B detects a voltage (a voltage corresponding to a source current) applied to each second main surface electrode 12 (source electrode) of the multiple second semiconductor elements 10B. The second control terminal 47C and the second control terminal 47D are terminals that are electrically connected to the thermistor 17.

[0069] Each of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47D) includes a holder 451 and a metal pin 452.

[0070] The holder 451 is made of a conductive material. As shown in FIGS. 14 and 15 , the holder 451 is bonded to the control terminal support 48 (first metal layer 482 described below) via a conductive bonding material 459. The holder 451 includes a cylindrical portion, an upper flange, and a lower flange. The upper flange is connected to the upper part of the cylindrical portion, and the lower flange is connected to the lower part of the cylindrical portion. A metal pin 452 is inserted through at least the upper flange and the cylindrical portion of the holder 451. The holder 451 is covered with sealing resin 8 (second protrusion 852 described below).

[0071] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by being press-fitted into the holder 451. The metal pin 452 is electrically connected to the control terminal support body 48 (a first metal layer 482 described below) at least via the holder 451. As in the example shown in FIGS. 14 and 15 , when the lower end (the end on the z2 side in the thickness direction z) of the metal pin 452 is in contact with the conductive bonding material 459 inside the insertion hole of the holder 451, the metal pin 452 is electrically connected to the control terminal support body 48 via the conductive bonding material 459.

[0072] Control terminal support body 48: The control terminal support body 48 supports the plurality of control terminals 45. The control terminal support body 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the thickness direction z.

[0073] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 32A and supports a plurality of first control terminals 46A to 46E among the plurality of control terminals 45. As shown in FIG. 14 , the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. The bonding material 49 may be conductive or insulating, and is, for example, solder. The second support portion 48B is disposed on the second conductive portion 32B and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. As shown in FIG. 15 , the second support portion 48B is bonded to the second conductive portion 32B via the bonding material 49.

[0074] The control terminal support 48 (each of the first support portion 48A and the second support portion 48B) is made of, for example, a direct bonded copper (DBC) substrate and includes an insulating layer 481, a first metal layer 482, and a second metal layer 483 stacked on top of each other.

[0075] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in plan view.

[0076] As shown in FIGS. 14 and 15 , the first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is provided upright on the first metal layer 482. The first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. As shown in FIG. 8 , the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, a fifth portion 482E, and a sixth portion 482F. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, the fifth portion 482E, and the sixth portion 482F are spaced apart and insulated from one another.

[0077] A plurality of wires 71 are bonded to the first portion 482A, and the first portion 482A is electrically connected to the first principal surface electrodes 11 (gate electrodes) of the first semiconductor elements 10A (second semiconductor elements 10B) via the wires 71. A plurality of wires 73 are connected between the first portion 482A and the sixth portion 482F. As a result, the sixth portion 482F is electrically connected to the first principal surface electrodes 11 (gate electrodes) of the first semiconductor elements 10A (second semiconductor elements 10B) via the wires 73 and 71. As shown in FIG. 8 , the first control terminal 46A is bonded to the sixth portion 482F of the first support portion 48A, and the second control terminal 47A is bonded to the sixth portion 482F of the second support portion 48B.

[0078] A plurality of wires 72 are joined to the second portion 482B, and the second portion 482B is electrically connected to the third principal surface electrode 13 (source sense electrode) of each of the first semiconductor elements 10A (each of the second semiconductor elements 10B) via each of the wires 72. As shown in Fig. 8 , the first control terminal 46B is joined to the second portion 482B of the first support portion 48A, and the second control terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0079] The thermistor 17 is joined to the third portion 482C and the fourth portion 482D. As shown in Fig. 8 , the first control terminals 46C and 46D are joined to the third portion 482C and the fourth portion 482D of the first support portion 48A, and the second control terminals 47C and 47D are joined to the third portion 482C and the fourth portion 482D of the second support portion 48B.

[0080] A wire 74 is joined to the fifth portion 482E of the first support portion 48A, and the fifth portion 482E is electrically connected to the first conductive portion 32A via the wire 74. As shown in FIG. 8 , a first control terminal 46E is joined to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the second support portion 48B is not electrically connected to other components. Each of the wires 71 to 74 is, for example, a bonding wire. The material of each of the wires 71 to 74 includes, for example, any of Au (gold), Al (aluminum), and Cu (copper).

[0081] 14, 15, etc., the second metal layer 483 is formed on the lower surface of the insulating layer 481. As shown in Fig. 14, the second metal layer 483 of the first support portion 48A is joined to the first conductive portion 32A via a bonding material 49. As shown in Fig. 15, the second metal layer 483 of the second support portion 48B is joined to the second conductive portion 32B via a bonding material 49.

[0082] First conductive member 5, second conductive member 6: The first conductive member 5 and the second conductive member 6, together with the first conductive portion 32A and the second conductive portion 32B, constitute a path for a main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The first conductive member 5 and the second conductive member 6 are spaced apart from the first main surface 301A and the second main surface 301B on the z1 side in the thickness direction z and overlap the first main surface 301A and the second main surface 301B in a plan view. In this embodiment, the first conductive member 5 and the second conductive member 6 are each made of a metal plate material. The metal includes, for example, Cu (copper) or a Cu (copper) alloy. Specifically, the first conductive member 5 and the second conductive member 6 are made of an appropriately bent metal plate material.

[0083] The first conductive member 5 is connected to the second principal surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive portion 32B, thereby electrically connecting the second principal surface electrode 12 of each first semiconductor element 10A and the second conductive portion 32B. The first conductive member 5 forms a path for a main circuit current switched by the multiple first semiconductor elements 10A. As shown in FIGS. 7 and 8 , the first conductive member 5 includes a main portion 51, multiple first bonding portions 52, and multiple second bonding portions 53.

[0084] The main portion 51 is located between the plurality of first semiconductor elements 10A and the second conductive portion 32B in the first direction x and is a strip-shaped portion extending in the second direction y in a plan view. The main portion 51 overlaps both the first conductive portion 32A and the second conductive portion 32B in a plan view and is spaced apart in the thickness direction z from the first main surface 301A and the second main surface 301B on the z1 side in the thickness direction z. As shown in FIG. 16 and other figures, the main portion 51 is located on the z2 side in the thickness direction z with respect to a third path portion 66 and a fourth path portion 67 of the second conductive member 6 described later and is closer to the first main surface 301A and the second main surface 301B than the third path portion 66 and the fourth path portion 67.

[0085] In this embodiment, the main portion 51 is disposed parallel to the first main surface 301A and the second main surface 301B.

[0086] As shown in FIG. 8 and other figures, the main portion 51 extends continuously in the second direction y to correspond to the region in which the multiple first semiconductor elements 10A are arranged. In this embodiment, as shown in FIGS. 7 , 8 , 13 , and other figures, multiple first openings 514 are formed in the main portion 51. Each of the multiple first openings 514 is, for example, a through-hole penetrating in the thickness direction z (the plate thickness direction of the main portion 51). The multiple first openings 514 are arranged at intervals in the second direction y. The multiple first openings 514 are provided corresponding to each of the multiple first semiconductor elements 10A. In this embodiment, four first openings 514 are provided in the main portion 51, and these first openings 514 and the multiple (four) first semiconductor elements 10A are positioned at the same position in the second direction y.

[0087] 8, 13, etc., in the present embodiment, each first opening 514 overlaps with a gap between the first conductive portion 32A and the second conductive portion 32B in a plan view. The multiple first openings 514 are formed to facilitate the flow of the resin material between the upper side (the z1 side in the thickness direction z) and the lower side (the z2 side in the thickness direction z) near the main portion 51 (first conductive member 5) when injecting the flowable resin material to form the sealing resin 8.

[0088] As shown in FIG. 8 and other figures, the multiple first bonding portions 52 and the multiple second bonding portions 53 are each connected to the main portion 51 and are arranged to correspond to the multiple first semiconductor elements 10A. Specifically, each first bonding portion 52 is located on the x1 side of the main portion 51 in the first direction x. Each second bonding portion 53 is located on the x2 side of the main portion 51 in the first direction x. As shown in FIG. 14 , each first bonding portion 52 is bonded to the corresponding second principal surface electrode 12 of one of the first semiconductor elements 10A via a conductive bonding material 59. Each second bonding portion 53 is bonded to the second conductive portion 32B via the conductive bonding material 59. The material of the conductive bonding material 59 is not particularly limited and may be, for example, solder, a metal paste material, or a sintered metal. In this embodiment, the first bonding portion 52 has two portions spaced apart in the second direction y. These two portions are joined to the second principal surface electrode 12 on both sides in the second direction y, with the gate finger 121 of the second principal surface electrode 12 of the first semiconductor element 10A sandwiched therebetween.

[0089] The second conductive member 6 electrically connects the second main surface electrode 12 (source electrode) of each second semiconductor element 10B to the first terminal 41 and the second terminal 42. The second conductive member 6 is integrally formed with the first terminal 41 and the second terminal 42. The second conductive member 6 constitutes a path for a main circuit current switched by the plurality of second semiconductor elements 10B. As shown in FIGS. 3 , 5 to 7 , 12 , 13 , and 16 to 18 , the second conductive member 6 includes a plurality of third joint portions 61, a first path portion 64, a second path portion 65, a plurality of third path portions 66, and a fourth path portion 67. In the illustrated example, the second conductive member 6 also includes a first step portion 602 and a second step portion 603.

[0090] The multiple third bonding portions 61 are portions that are individually bonded to the multiple second semiconductor elements 10B. Each third bonding portion 61 and the second main surface electrode 12 of each second semiconductor element 10B are bonded via a conductive bonding material 69. The material of the conductive bonding material 69 is not particularly limited and may be, for example, solder, a metal paste material, or a sintered metal. In this embodiment, the third bonding portion 61 has two flat portions 611 and two first inclined portions 612.

[0091] The two flat portions 611 are aligned in the second direction y. The two flat portions 611 are spaced apart from each other in the second direction y. The shape of the flat portions 611 is not limited in any way, and in the illustrated example, they are rectangular. The two flat portions are joined to the second main surface electrode 12 on both sides in the second direction y, sandwiching the gate finger 121 of the second main surface electrode 12 of the second semiconductor element 10B therebetween.

[0092] The two first inclined portions 612 are connected to the outside of the two flat portions 611 in the second direction y. That is, the first inclined portion 612 located on the y1 side in the second direction y is connected to the y1 side in the second direction y of the flat portion 611 located on the y1 side in the second direction y. Furthermore, the first inclined portion 612 located on the y2 side in the second direction y is connected to the y2 side in the second direction y of the flat portion 611 located on the y2 side in the second direction y. The first inclined portion 612 is inclined so that the farther it is from the flat portion 611 in the second direction y, the closer it is to the z1 side in the thickness direction z.

[0093] The first path portion 64 is interposed between the plurality of third joint portions 61 and the first terminal 41. In the illustrated example, the first path portion 64 is connected to the first terminal 41 via a first step portion 602. The first path portion 64 overlaps the first conductive portion 32A in a plan view. The first path portion 64 has a shape that extends as a whole in the first direction x.

[0094] The first path portion 64 includes a first band-shaped portion 641 and a first extending portion 643. The first band-shaped portion 641 is located on the x2 side in the first direction x with respect to the first terminal 41 and is substantially parallel to the first main surface 301A. The first band-shaped portion 641 has a shape that extends in the first direction x as a whole. In the illustrated example, the first band-shaped portion 641 has a recess 649. The recess 649 is a portion of the first band-shaped portion 641 that is recessed toward the y1 side in the second direction y. In FIG. 5 , the first metal portion 35 appears through the recess 649.

[0095] The first extending portion 643 extends from the side end of the first strip portion 641 on the y1 side in the second direction y to the z2 side in the thickness direction z. The first extending portion 643 is spaced apart from the first conductive portion 32A. In the illustrated example, the first extending portion 643 is shaped along the thickness direction z and has an elongated rectangular shape with the first direction x as the longitudinal direction. Note that the first path portion 64 may not have the first extending portion 643.

[0096] The second path portion 65 is interposed between the plurality of third joint portions 61 and the second terminal 42. In the illustrated example, the second path portion 65 is connected to the second terminal 42 via the second step portion 603. The second path portion 65 overlaps the first conductive portion 32A in a plan view. The second path portion 65 has a shape that extends as a whole in the first direction x.

[0097] The second path portion 65 includes a second band-shaped portion 651 and a second extending portion 653. The second band-shaped portion 651 is located on the x2 side in the first direction x with respect to the second terminal 42 and is substantially parallel to the first main surface 301A. The second band-shaped portion 651 has a shape that extends in the first direction x as a whole. In the illustrated example, the second band-shaped portion 651 has a recess 659. The recess 659 is a portion of the second band-shaped portion 651 that is recessed toward the y2 side in the second direction y. In FIG. 5 , the second metal portion 36 appears through the recess 659.

[0098] The second extending portion 653 extends from the side end of the second strip portion 651 on the y2 side in the second direction y to the z2 side in the thickness direction z. The second extending portion 653 is spaced apart from the first conductive portion 32A. In the example shown, the second extending portion 653 is shaped along the thickness direction z and has an elongated rectangular shape with the first direction x as the longitudinal direction. Note that the second path portion 65 may not have the second extending portion 653.

[0099] The multiple third path portions 66 are individually connected to the multiple third joint portions 61. Each third path portion 66 has a shape extending in the first direction x and is arranged at a distance from one another in the second direction y. There is no limitation on the number of multiple third path portions 66, and in the example shown, five third path portions 66 are arranged. Each third path portion 66 is arranged so as to be located between the multiple second semiconductor elements 10B in the second direction y or to be located outward of the multiple second semiconductor elements 10B in the second direction y.

[0100] Recesses 669 are formed in the two third path portions 66 located on both outer sides in the second direction y. The recesses 669 are recessed from the inside toward the outside in the second direction y. In the illustrated example, one recess 669 is formed in each of the two third path portions 66. In FIG. 5 , the second conductive portion 32B appears through these recesses 669.

[0101] In the present embodiment, one third joint 61 is disposed between two third path portions 66 adjacent to each other in the second direction y. In one third joint 61, the first inclined portion 612 located on the y1 side in the second direction y is connected to the third path portion 66 located on the y1 side in the second direction y, of the two third path portions 66 adjacent to each other in the second direction y. In one third joint 61, the first inclined portion 612 located on the y2 side in the second direction y is connected to the third path portion 66 located on the y2 side in the second direction y, of the two third path portions 66 adjacent to each other in the second direction y.

[0102] The fourth path portion 67 is connected to the ends of the plurality of third path portions 66 on the x1 side in the first direction x. The fourth path portion 67 has a shape that extends elongatedly in the second direction y. The fourth path portion 67 is connected to the ends of the first band portion 641 of the first path portion 64 and the second band portion 651 of the second path portion 65 on the x2 side in the first direction x. In the example shown, the first path portion 64 is connected to the end of the fourth path portion 67 on the y1 side in the second direction y. Furthermore, the second path portion 65 is connected to the end of the fourth path portion 67 on the y2 side in the second direction y.

[0103] Sealing resin 8: The sealing resin 8 covers the multiple first semiconductor elements 10A, the multiple second semiconductor elements 10B, the support substrate 3 (excluding the back surface 302), portions of the first terminal 41, the second terminal 42, the multiple third terminals 43, and the multiple fourth terminal 44, portions of the multiple control terminals 45, the control terminal support 48, the first conductive member 5, the second conductive member 6, and the multiple wires 71 to 74. The sealing resin 8 is made of, for example, black epoxy resin. The sealing resin 8 is formed, for example, by molding. The sealing resin 8 has, for example, a dimension in the first direction x of approximately 35 mm to 60 mm, a dimension in the second direction y of approximately 35 mm to 50 mm, and a dimension in the thickness direction z of approximately 4 mm to 15 mm. These dimensions are the sizes of the largest portions along each direction. The sealing resin 8 has a resin main surface 81, a resin back surface 82, and multiple resin side surfaces 831 to 834.

[0104] As shown in FIGS. 10 , 12 , and 18 , the resin main surface 81 and the resin back surface 82 are spaced apart in the thickness direction z. The resin main surface 81 faces the z1 side in the thickness direction z, and the resin back surface 82 faces the z2 side in the thickness direction z. A plurality of control terminals 45 (a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D) protrude from the resin main surface 81. As shown in FIG. 11 , the resin back surface 82 has a frame shape surrounding the back surface 302 (the lower surface of the back surface metal layer 33) of the support substrate 3 in a plan view. The back surface 302 of the support substrate 3 is exposed from the resin back surface 82 and is, for example, flush with the resin back surface 82. Each of the plurality of resin side surfaces 831 to 834 is connected to both the resin main surface 81 and the resin back surface 82 and is sandwiched between them in the thickness direction z. As shown in FIG. 4 and other figures, the resin side surface 831 and the resin side surface 832 are spaced apart in the first direction x. The resin side surface 831 faces the x2 side in the first direction x, and the resin side surface 832 faces the x1 side in the first direction x. Two third terminals 43 protrude from the resin side surface 831, and the first terminal 41, the second terminal 42, and the fourth terminal 44 protrude from the resin side surface 832. As shown in FIG. 4 and other figures, the resin side surface 833 and the resin side surface 834 are spaced apart in the second direction y. The resin side surface 833 faces the y2 side in the second direction y, and the resin side surface 834 faces the y1 side in the second direction y.

[0105] As shown in FIG. 4 , a plurality of recesses 832a are formed in the resin side surface 832. Each recess 832a is a portion recessed in the first direction x in a plan view. The plurality of recesses 832a include those formed between the first terminal 41 and the fourth terminal 44 and those formed between the second terminal 42 and the fourth terminal 44 in a plan view. The plurality of recesses 832a are provided to increase the creepage distance along the resin side surface 832 between the first terminal 41 and the fourth terminal 44 and the creepage distance along the resin side surface 832 between the second terminal 42 and the fourth terminal 44.

[0106] As shown in FIGS. 12 and 13 , the sealing resin 8 has a plurality of first protrusions 851 , a plurality of second protrusions 852 , and a resin gap 86 .

[0107] Each of the multiple first protrusions 851 protrudes from the resin main surface 81 in the thickness direction z. The multiple first protrusions 851 are arranged near the four corners of the sealing resin 8 in a plan view. A first protrusion end surface 851a is formed at the tip (the end on the z1 side in the thickness direction z) of each of the first protrusions 851. Each of the multiple first protrusions 851 has a bottomed, hollow truncated cone shape, for example. The multiple first protrusions 851 are used as spacers when the semiconductor device A1 is mounted on a control circuit board or other device that uses power generated by the semiconductor device A1. Each of the multiple first protrusions 851 has a recess 851b and an inner wall surface 851c formed in the recess 851b. The shape of each first protrusion 851 may be columnar, and is preferably cylindrical. The shape of the recess 851b is preferably cylindrical, and the inner wall surface 851c is preferably a single perfect circle in plan view.

[0108] The sealing resin 8 also has a groove 89. The groove 89 is a portion recessed from the resin rear surface 82 toward the z1 side in the thickness direction z. The groove 89 traverses the resin rear surface 82 in the second direction y. In the illustrated example, the sealing resin 8 has two grooves 89. The two grooves 89 are arranged apart from each other in the x direction. The rear surface metal layer 33 (rear surface 302) is located between the two grooves 89.

[0109] The semiconductor device A1 may be mechanically fixed to a control circuit board or the like by a method such as screwing. In this case, a female screw thread may be formed on the inner wall surfaces 851c of the recesses 851b of the first protrusions 851. Insert nuts may be embedded in the recesses 851b of the first protrusions 851.

[0110] As shown in FIG. 13 and other figures, the multiple second protrusions 852 protrude from the resin main surface 81 in the thickness direction z. The multiple second protrusions 852 overlap the multiple control terminals 45 in a plan view. Each metal pin 452 of the multiple control terminals 45 protrudes from the corresponding second protrusion 852. Each second protrusion 852 has a truncated cone shape. In each control terminal 45, the second protrusion 852 covers the holder 451 and a portion of the metal pin 452.

[0111] As shown in FIGS. 29 and 30, the power conversion unit B1 includes a semiconductor device A1 and a cooling device 9.

[0112] The cooling device 9 is disposed on the z2 side of the semiconductor device A1 in the thickness direction z. The cooling device 9 has a housing 91.

[0113] The housing 91 is a box-shaped member made of metal, resin, or the like. The housing 91 houses the heat dissipation member 2. In this embodiment, the housing 91 is attached to the semiconductor device A1 via a sealing material 919. The sealing material 919 is sandwiched between the end of the housing 91 and the resin rear surface 82 of the sealing resin 8, and keeps the internal space of the housing 91 airtight.

[0114] The housing 91 is filled with a cooling medium Cm. The cooling medium Cm flows within the housing 91. In this embodiment, the cooling device 9 has a supply unit 92 and a discharge unit 93. The supply unit 92 and the discharge unit 93 are attached separately to both sides of the housing 91 in the first direction x. The supply unit 92 supplies the cooling medium Cm to the housing 91. The discharge unit 93 discharges the cooling medium Cm that has flowed through the housing 91. As a result, the cooling medium Cm flows in the second direction y within the housing 91. Note that the cooling medium Cm flowing in the second direction y does not mean that only a flow velocity component in the second direction y exists, but also includes a state in which the cooling medium Cm as a whole moves in the second direction y while including flow velocity components in the first direction x and the thickness direction z.

[0115] Next, the operation of this embodiment will be described.

[0116] The heat dissipation member 2 includes a plurality of first convex portions 21. The first convex portions 21 are shaped to protrude from the rear surface 302 toward the z2 side in the thickness direction z. These first convex portions 21 are arranged in a matrix along a plane including the first direction x and the second direction y. This allows, for example, when cooling using a cooling medium Cm, heat transferred from the first semiconductor element 10A and the second semiconductor element 10B to the heat dissipation member 2 via the support substrate 3 to be more efficiently transferred to the cooling medium Cm. This allows heat from the first semiconductor element 10A and the second semiconductor element 10B to be dissipated more quickly.

[0117] As described with reference to FIG. 27 , the heat dissipation member 2 is configured to be smaller in size in the first direction x than the metal plate material 20. For example, unlike this embodiment, a heat dissipation member having multiple upright pieces can be obtained by forming multiple V-shaped cutting lines in the metal plate material and raising the areas surrounded by these cutting lines. This heat dissipation member has the same (or approximately the same) size and shape as the metal plate material when viewed in the thickness direction, and is not reduced in any way. Compared to such heat dissipation members having multiple simple upright pieces, the heat dissipation member 2 of this embodiment has a more complex three-dimensional shape. This significantly increases the contact area when the cooling medium Cm flows, which is advantageous for improving heat dissipation efficiency.

[0118] The first convex portions 21 each have a first raised portion 213, a second raised portion 214, and a first tip portion 215, so that the first convex portions 21 have a hollow portion when viewed in the second direction y. As a result, the heat dissipation member 2, in which the first convex portions 21 are arranged in a matrix, is configured to facilitate the flow of the cooling medium Cm along the second direction y. Therefore, in the power conversion unit B1, the cooling medium Cm can flow smoothly in the second direction y.

[0119] The heat dissipation member 2 of this embodiment further includes a plurality of second convex portions 22 in addition to the plurality of first convex portions 21. The plurality of second convex portions 22 protrude further in the thickness direction z from the first tip ends 215 of the plurality of first convex portions 21. This allows the size of the heat dissipation member 2 in the thickness direction z to be further increased, and the contact area with the cooling medium Cm to be further expanded. This is therefore suitable for improving heat dissipation efficiency.

[0120] 28A shows the bonding plane P2 of the heat dissipation member 2. The bonding plane P2 is a plane along the portion of the heat dissipation member 2 that faces the rear surface 302 when the heat dissipation member 2 is bonded to the rear surface 302 of the support substrate 3. In this embodiment, the bonding plane P2 is a plane along the first base portions 211 and the second base portions 212 of the multiple first convex portions 21.

[0121] In this embodiment, the heat dissipation member 2 has a plurality of first convex portions 21 arranged in a matrix and has a shape smaller in size in the first direction x than the metal plate material 20. Therefore, the heat dissipation member 2 is configured to be easily subjected to three-dimensional bending and twisting deformation compared to, for example, the metal plate material 20. For example, FIG. 1B shows a bending deformation in which the central portion of the joining plane P2 in the first direction x is lifted in the thickness direction z, and FIG. 1C shows a bending deformation in which the central portion of the joining plane P2 in the second direction y is lifted in the thickness direction z. Furthermore, FIG. 1D shows a twisting deformation in which both ends of the joining plane P2 in the first direction x are rotated in different directions from each other. The heat dissipation member 2 has flexibility or pliability that can sufficiently follow the bending and twisting deformations shown in (b) to (d).

[0122] 28(b) to 28(d) occur on the rear surface 302 of the support substrate 3 due to manufacturing errors in the manufacturing process, thermal deformation during use, or the like, the heat dissipation member 2 can be made to follow these deformations, thereby making it possible to properly fix the heat dissipation member 2 to the rear surface 302. In particular, by joining each of the first base portions 211 and the second base portions 212 of the multiple first convex portions 21 to the rear surface 302 by laser welding or the like, it is possible to prevent unintended gaps from occurring between the heat dissipation member 2 and the rear surface 302, even if deformations such as those shown in FIGS.

[0123] 31 to 48 show other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals. Furthermore, the configurations of the parts in each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0124] 31 to 36 show a heat dissipation member of a semiconductor device according to a second embodiment of the present disclosure. The heat dissipation member 2 of this embodiment includes a plurality of first convex portions 21 but does not include a plurality of second convex portions 22.

[0125] In this embodiment, the multiple first convex portions 21 are aligned along the first direction x and the second direction y. The first base portions 211 and the second base portions 212 of the first convex portions 21 adjacent to each other in the first direction x are connected to each other and form an integrated portion. The first base portions 211 and the second base portions 212 of the first convex portions 21 adjacent to each other in the second direction y are also connected to each other. As a result, the first base portions 211 and the second base portions 212 of the multiple first convex portions 21 aligned in the second direction y have a band-like shape extending along the second direction y as a whole when viewed in the thickness direction z.

[0126] The first upright portions 213, the second upright portions 214, and the first tip portions 215 of the first convex portions 21 adjacent to each other in the second direction y are not connected to each other. In this embodiment, the heat dissipation member 2 has a plurality of slits 23. When viewed in the thickness direction z, the slits 23 have an elongated shape extending in the first direction x, and are located between the first convex portions 21 adjacent to each other in the second direction y.

[0127] In this embodiment, the first convex portions 21 adjacent to each other in the second direction y are arranged so as to be offset from each other in the second direction y. That is, the multiple first convex portions 21 aligned in the second direction y are arranged in a zigzag pattern when viewed in the thickness direction z.

[0128] This embodiment also allows heat from the first semiconductor element 10A and the second semiconductor element 10B to be dissipated more quickly. Furthermore, in this embodiment, the multiple first convex portions 21 aligned in the second direction y are arranged in a zigzag pattern when viewed in the thickness direction z. This allows the cooling medium Cm to flow in a serpentine pattern in a power conversion unit using the heat dissipation member 2 of this embodiment. This allows the flow path of the cooling medium Cm to be extended, thereby improving heat dissipation efficiency.

[0129] Furthermore, as can be understood from this embodiment, the heat dissipation member 2 of the present disclosure is not limited to a configuration having both a plurality of first convex portions 21 and a plurality of second convex portions 22, but may also be a configuration having a plurality of first convex portions 21 but not a plurality of second convex portions 22.

[0130] 37 to 42 show a heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure. The heat dissipation member 2 of this embodiment includes a plurality of first convex portions 21.

[0131] In this embodiment, the distance between the first standing portion 213 and the second standing portion 214 of the first convex portion 21 is smaller than in the above-described embodiment. For example, the distance between the first standing portion 213 and the second standing portion 214 is smaller than the thickness of each of the first standing portion 213 and the second standing portion 214, and is significantly smaller than the distance between adjacent first convex portions 21 in the first direction x.

[0132] The first tip portion 215 of this embodiment has a folded shape. That is, the distance between the first upright portion 213 and the second upright portion 214 is significantly shorter, and therefore the dimension of the first tip portion 215 in the first direction x is significantly smaller than in the above-described embodiment.

[0133] In this embodiment as well, the slits 23 are formed between the first convex portions 21 adjacent to each other in the second direction y.

[0134] This embodiment also allows heat from the first semiconductor element 10A and the second semiconductor element 10B to be dissipated more quickly. Furthermore, as can be understood from this embodiment, the first convex portion 21 is not limited to a configuration in which the first upright portion 213, the second upright portion 214, and the first tip portion 215 are U-shaped when viewed in the second direction y. The first upright portion 213 and the second upright portion 214 may be very close to each other, forming a flat shape. Even with this configuration, the cooling medium Cm flows through the space between adjacent first convex portions 21, thereby improving heat dissipation efficiency. Furthermore, the shape of the first tip portion 215 is not limited in any way and may be a flat, folded shape, or a curved shape bulging toward the z2 side in the thickness direction z.

[0135] 43 to 48 show a heat dissipation member of a semiconductor device according to a fourth embodiment of the present disclosure. The heat dissipation member 2 of this embodiment includes a plurality of first convex portions 21.

[0136] In this embodiment, the first tip portion 215 of the first convex portion 21 has a curved shape when viewed in the thickness direction z. Furthermore, the first upright portion 213 and the second upright portion 214 have a curved surface shape.

[0137] More specifically, the first tip 215 of a certain first convex portion 21 is curved so that the central portion in the second direction y is located closer to the x1 side in the first direction x than both end portions in the second direction y. In this first convex portion 21, the first upright portion 213 and the second upright portion 214 have a curved surface shape that is curved so that the central portion in the second direction y is located closer to the x1 side in the first direction x than both end portions in the second direction y when viewed in the thickness direction z.

[0138] Furthermore, the first tip 215 of the other first convex portion 21 is curved so that the central portion in the second direction y is located closer to the x2 side in the first direction x than both end portions in the second direction y. In this first convex portion 21, the first upright portion 213 and the second upright portion 214 have a curved surface shape that is curved so that the central portion in the second direction y is located closer to the x2 side in the first direction x than both end portions in the second direction y when viewed in the thickness direction z.

[0139] In this embodiment, the two types of first convex portions 21 are arranged alternately in the second direction y. As a result, the first tip portions 215 of the multiple first convex portions 21 arranged in the second direction y have a strip-like shape that meanders in the second direction y when viewed in the thickness direction z. Furthermore, the multiple first convex portions 21 arranged in the first direction x are curved to the same side.

[0140] In this embodiment as well, the slits 23 are formed between the first convex portions 21 adjacent to each other in the second direction y.

[0141] This embodiment also allows heat from the first semiconductor element 10A and the second semiconductor element 10B to be dissipated more quickly. Furthermore, according to this embodiment, the multiple first convex portions 21 aligned in the second direction y form a flow path that meanders in the second direction y. This allows the flow path of the cooling medium Cm to be extended, thereby improving heat dissipation efficiency. Furthermore, the spaces located between the multiple first convex portions 21 in the first direction x form a flow path that meanders in the second direction y. This also allows heat dissipation efficiency to be improved.

[0142] As can be understood from this embodiment, the first tip portion 215 is not limited to a rectangular shape having sides parallel to the second direction y, but may be a curved shape having curved sides. Furthermore, the first upright portion 213 and the second upright portion 214 are not limited to a flat plate-like configuration, but may be curved.

[0143] The semiconductor device, power conversion unit, and semiconductor device manufacturing method according to the present disclosure are not limited to the above-described embodiments. Specific configurations of the semiconductor device, power conversion unit, and semiconductor device manufacturing method according to the present disclosure can be freely modified in various ways. The present disclosure includes the embodiments described in the following appendices.

[0144] Supplementary Note 1. A semiconductor device comprising: a semiconductor element; a support substrate supporting the semiconductor element; and a sealing resin covering the semiconductor element and a portion of the support substrate, wherein the support substrate has a main surface facing a first side in a thickness direction and a back surface facing a second side and exposed from the sealing resin, the semiconductor element is mounted on the main surface, and further comprising a heat dissipation member arranged on the back surface, wherein the heat dissipation member includes a plurality of first convex elements each having a first base portion, a second base portion, a first raised portion, a second raised portion, and a first tip portion, the first base portion and the second base portion are spaced apart from each other in a first direction perpendicular to the thickness direction and are each joined to the back surface, the first tip portion is located between the first base portion and the second base portion in the first direction and is located on the second side of the first base portion and the second base portion in the thickness direction, and the first raised portion is connected to the first base portion and the first tip portion, A semiconductor device in which the second upright portion is connected to the second base portion and the first tip portion, and the plurality of first convex elements are arranged in a matrix along a plane including the first direction, the thickness direction, and a second direction orthogonal to the first direction. Appendix 2. The semiconductor device according to Appendix 1, wherein the first upright portions of two of the first convex elements adjacent in the second direction are spaced apart from each other. Appendix 3. The semiconductor device according to Appendix 2, wherein the second upright portions of two of the first convex elements adjacent in the second direction are spaced apart from each other. Appendix 4. The semiconductor device according to Appendix 3, wherein the first base portion of one of the two first convex elements adjacent in the first direction is connected to the second base portion of the other of the two first convex elements adjacent in the first direction. Appendix 5. The semiconductor device according to Appendix 4, wherein the first base portions of two of the first convex elements adjacent in the second direction are spaced apart from each other, and the second base portions of two of the first convex elements adjacent in the second direction are spaced apart from each other.Appendix 6. The semiconductor device according to Appendix 5, wherein the heat dissipation member further includes a plurality of second convex elements each having a third base portion, a fourth base portion, a third upstanding portion, a fourth upstanding portion, and a second tip portion, wherein the third base portion is connected to the first tip portions of two of the first convex elements adjacent in the second direction, the fourth base portion is connected to the first tip portions of two other of the first convex elements adjacent in the second direction, the second tip portions are located between the third base portion and the fourth base portion in the first direction and on the second side of the third base portion and the fourth base portion in the thickness direction, the third upstanding portion is connected to the third base portion and the second tip portion, and the third upstanding portion is connected to the fourth base portion and the second tip portion. The semiconductor device according to Appendix 6, wherein the size of the second convex element in the thickness direction is greater than the distance in the first direction between the third upright portion and the fourth upright portion. Appendix 8. The semiconductor device according to any one of Appendixes 1 to 7, wherein the size of the first convex element in the thickness direction is greater than the distance in the first direction between the first upright portion and the second upright portion. Appendix 9. The semiconductor device according to Appendix 4, wherein the first base portions of two first convex elements adjacent to each other in the second direction are connected, and the second base portions of two first convex elements adjacent to each other in the second direction are connected. Appendix 10. The semiconductor device according to Appendix 9, wherein the first convex elements adjacent to each other in the second direction are arranged offset from each other in the second direction. Appendix 11. The semiconductor device according to Appendix 9, wherein the first tip portion has a curved shape when viewed in the thickness direction, and the first upright portion and the second upright portion have curved surfaces. Appendix 12. The semiconductor device according to any one of Supplementary Notes 9 to 11, wherein the heat dissipation member has a slit located between the first upright portion, the second upright portion, and the first tip portion of the first convex elements adjacent in the second direction.Supplementary Note 13. The semiconductor device according to any one of Supplementary Notes 1 to 12, wherein the first tip portion is flat.Supplementary Note 14. The semiconductor device according to any one of Supplementary Notes 1 to 12, wherein the first tip portion is folded back.Appendix 15. The semiconductor device according to any one of Appendixes 1 to 14, wherein the first base portion and the second base portion are joined to the back surface by welding. Appendix 16. A power conversion unit comprising: the semiconductor device according to any one of Appendixes 1 to 15; and a cooling device arranged on the second side in the thickness direction of the semiconductor device, wherein the cooling device has a housing that houses the heat dissipation member and allows a cooling medium to flow. Appendix 17. The power conversion unit according to Appendix 16, wherein the cooling medium flows in the second direction within the housing. Appendix 18. A method for manufacturing a semiconductor device, comprising: forming a heat dissipation member using a metal plate material; and arranging the heat dissipation member on the back surface of a support substrate, wherein the forming of the heat dissipation member includes: a process of forming a plurality of cutting lines along a first direction that is a direction perpendicular to the thickness direction of the metal plate material; and a process of forming a plurality of first convex portions by deforming portions of the metal plate material that are sandwiched between adjacent cutting lines in a second direction perpendicular to the thickness direction and the first direction into a shape that protrudes in the thickness direction. Appendix 19. The method for manufacturing a semiconductor device according to Appendix 18, wherein a size of the heat dissipation member in the first direction is smaller than a size of the metal plate material in the first direction. Appendix 20. The method for manufacturing a semiconductor device according to Appendix 18 or 19, wherein in the step of arranging the heat dissipation member on the back surface of the support substrate, the heat dissipation member is joined to the back surface using laser welding.

[0145] A1: Semiconductor device B1: Power conversion unit 2: Heat dissipation member 3: Support substrate 5: First conductive member 6: Second conductive member 8: Sealing resin 9: Cooling device 10A: First semiconductor element 10B: Second semiconductor element 11: First principal surface electrode 12: Second principal surface electrode 13: Third principal surface electrode 15: Back surface electrode 17: Thermistor 19A: First conductive bonding material 19B: Second conductive bonding material 20: Metal plate material 21: First convex portion 22: Second convex portion 23: Slit 31: Insulating layer 32: First metal layer 32A: First conductive portion 32B: Second conductive portion 33: Back surface metal layer 35: First metal portion 36: Second metal portion 41: First terminal 42: Second terminal 43: Third terminal 44: Fourth terminal 45: Control terminal 46A, 46B, 46C, 46D, 46E: First control terminal 47A, 47B, 47C, 47D: Second control terminal 48: Control terminal support 48A: First support portion 48B: Second support portion 49: Bonding material 51: Main portion 52: First joint portion 53: Second joint portion 59: Conductive bonding material 61: Third joint portion 64: First path portion 65: Second path portion 66: Third path portion 67: Fourth path portion 69: Conductive bonding material 71, 72, 73,74: Wire 81: Resin main surface 82: Resin back surface 86: Resin void portion 89: Groove portion 91: Housing 92: Supply portion 93: Discharge portion 101: Element main surface 102: Element back surface 121: Gate finger 201: Cutting line 211: First base portion 212: Second base portion 213: First upright portion 214: Second upright portion 215: First tip portion 221: Third base portion 222: Fourth base portion 223: Third upright portion 224: Fourth upright portion 225: Second tip portion 301A: First main surface 301B: Second main surface 302: Back surface 451: Holder 452: Metal pin 459: Conductive bonding material 481: Insulating layer 482: First metal layer 482A: First portion 482B: Second portion 482C: Third portion 482D: Fourth portion 482E: Fifth portion 482F: Sixth portion 483: Second metal layer 514: First opening 602: First step portion 603: Second step portion 611: Flat portion 612: First inclined portion 641: First band-shaped portion 643: First extending portion 649: Recessed portion 651: Second band-shaped portion 653: Second extending portion 659, 669: Recessed portions 831, 832: Resin side surface 832a: Recessed portion 833: Resin side surface 834: Resin side surface 851: First protruding portion 851a: First protruding end surface 851b: Recessed portion 851c: Inner wall surface 852: Second protruding portion 919: Sealing material Cm: Cooling medium M: welded portion x: first direction y: second direction z: thickness direction

Claims

1. A semiconductor element; A support substrate that supports the semiconductor element; a sealing resin that covers the semiconductor element and a portion of the support substrate, the support substrate has a main surface facing a first side in a thickness direction and a back surface facing a second side and exposed from the sealing resin; the semiconductor element is mounted on the main surface, Further comprising a heat dissipation member disposed on the rear surface, the heat dissipation member includes a plurality of first convex elements each having a first base portion, a second base portion, a first raised portion, a second raised portion, and a first tip portion; the first base portion and the second base portion are spaced apart from each other in a first direction perpendicular to the thickness direction, and are each joined to the back surface; the first tip portion is located between the first base portion and the second base portion in the first direction and is located on the second side of the first base portion and the second base portion in the thickness direction, The first upright portion is connected to the first base portion and the first tip portion, The second standing portion is connected to the second base portion and the first tip portion, A semiconductor device, wherein the plurality of first convex elements are arranged in a matrix along a plane including the first direction, the thickness direction, and a second direction perpendicular to the first direction.

2. The semiconductor device according to claim 1 , wherein the first raised portions of two of the first convex elements adjacent to each other in the second direction are spaced apart from each other.

3. The semiconductor device according to claim 2 , wherein the second upright portions of two of the first convex elements adjacent to each other in the second direction are spaced apart from each other.

4. The semiconductor device according to claim 3 , wherein the first base portion of one of two first convex elements adjacent to each other in the first direction is connected to the second base portion of the other first convex element.

5. the first base portions of the two first convex elements adjacent to each other in the second direction are spaced apart from each other, The semiconductor device according to claim 4 , wherein the second base portions of two of the first convex elements adjacent to each other in the second direction are spaced apart from each other.

6. the heat dissipation member further includes a plurality of second convex elements each having a third base portion, a fourth base portion, a third raised portion, a fourth raised portion, and a second tip portion; the third base portion is connected to the first tip portions of two of the first convex elements adjacent to each other in the second direction, the fourth base portion is connected to the first tip portions of two other first convex elements adjacent to each other in the second direction, the second tip portion is located between the third base portion and the fourth base portion in the first direction and is located on the second side of the third base portion and the fourth base portion in the thickness direction, the third upright portion is connected to the third base portion and the second tip portion, The semiconductor device according to claim 5 , wherein the fourth standing portion is connected to the fourth base portion and the second tip portion.

7. The semiconductor device according to claim 6 , wherein a size of the second convex element in the thickness direction is greater than a distance between the third upright portion and the fourth upright portion in the first direction.

8. 8. The semiconductor device according to claim 1, wherein a size of said first convex element in said thickness direction is greater than a distance in said first direction between said first standing portion and said second standing portion.

9. The first base portions of two first convex elements adjacent to each other in the second direction are connected to each other, The semiconductor device according to claim 4 , wherein the second base portions of two of the first convex elements adjacent to each other in the second direction are connected to each other.

10. The semiconductor device according to claim 9 , wherein the first convex elements adjacent to each other in the second direction are arranged so as to be shifted from each other in the second direction.

11. The first tip portion has a curved shape when viewed in the thickness direction, The semiconductor device according to claim 9 , wherein the first standing portion and the second standing portion are curved.

12. 12. The semiconductor device according to claim 9, wherein the heat dissipation member has a slit located between the first upright portion, the second upright portion and the first tip portion of the first convex elements adjacent to each other in the second direction.

13. The semiconductor device according to claim 1 , wherein the first tip portion is flat.

14. The semiconductor device according to claim 1 , wherein the first tip portion has a folded shape.

15. The semiconductor device according to claim 1 , wherein the first base portion and the second base portion are joined to the back surface by welding.

16. A semiconductor device according to claim 1; a cooling device disposed on the second side in the thickness direction of the semiconductor device, The cooling device is a power conversion unit having a housing that houses the heat dissipation member and allows a cooling medium to flow.

17. The power conversion unit according to claim 16 , wherein the cooling medium flows in the second direction within the housing.

18. forming a heat dissipation member using a metal plate material; and disposing the heat dissipation member on a rear surface of a support substrate, The step of forming the heat dissipation member includes: forming a plurality of cutting lines along a first direction perpendicular to a thickness direction of the metal plate material; a process for forming a plurality of first convex portions by deforming portions of the metal plate material that are sandwiched between adjacent cutting lines in the thickness direction and a second direction perpendicular to the first direction into a shape that protrudes in the thickness direction.

19. The method for manufacturing a semiconductor device according to claim 18 , wherein a size of the heat dissipation component in the first direction is smaller than a size of the metal plate material in the first direction.

20. 20. The method for manufacturing a semiconductor device according to claim 18, wherein in the step of arranging the heat dissipation member on the back surface of the support substrate, the heat dissipation member is joined to the back surface by laser welding.

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