Semiconductor device

Abstract

This semiconductor device comprises a support substrate and at least one terminal. The support substrate has a main surface directed toward one thickness-direction side. The at least one terminal is disposed on the main surface, and includes an electrically conductive holder, and a metal pin that is press-fitted into the inner circumferential surface of the holder, the metal pin projecting further to one thickness-direction side than the holder. At least one projection that projects radially inward is provided on the inner circumferential surface of the holder. The at least one projection abuts the outer circumferential surface of the metal pin.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices including power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. Such semiconductor devices are installed in a wide variety of electronic devices, from industrial equipment to home appliances, information terminals, and automotive equipment. Patent Document 1 (Patent Document 1) discloses a conventional semiconductor device (power module). The semiconductor device described in Patent Document 1 includes a semiconductor element and a support substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of silicon (Si). The support substrate supports the semiconductor element. The support substrate includes an insulating base material and conductor layers stacked on both sides of the base material. The base material is, for example, made of ceramic. Each conductor layer is, for example, made of copper (Cu), and a semiconductor element is bonded to one of the conductor layers.

[0003] Japanese Patent Application Laid-Open No. 2021-190505

[0004] In recent years, there has been a demand for electronic devices to be more energy efficient, perform better, and be more compact. To achieve this, it is necessary to improve the performance and reliability of the power modules installed in electronic devices.

[0005] An object of the present disclosure is to provide a semiconductor device that is improved over conventional semiconductor devices. In particular, in view of the above-described circumstances, an object of the present disclosure is to provide a semiconductor device that is suitable for improving reliability.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a support substrate having a main surface facing one side in a thickness direction, a conductive holder disposed on the main surface, and at least one terminal including a metal pin press-fitted into an inner peripheral surface of the holder and protruding beyond the holder toward one side in the thickness direction. The inner peripheral surface of the holder is provided with at least one protrusion protruding radially inward. The at least one protrusion abuts against an outer peripheral surface of the metal pin.

[0007] According to the above configuration, it is possible to provide a semiconductor device having a structure that is preferable for improving reliability.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a view in which a lid and a sealing portion are omitted from the plan view of FIG. 2. FIG. 4 is a view in which a case is omitted from the plan view of FIG. 3. FIG. 5 is an enlarged view in which a heat sink and first to third main terminals are omitted from the plan view of FIG. 4. FIG. 6 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a rear view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a right side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 9 is a left side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 10 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 3. FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 3. FIG. 16 is an enlarged perspective view of a holder constituting the control terminal. FIG. 17 is a partially enlarged front view of the control terminal. FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 17. FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 17. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 17. FIG. 21 is a plan view similar to FIG. 4 showing a semiconductor device according to a first modification of the first embodiment. FIG. 22 is a partially enlarged front view of a control terminal in a semiconductor device according to a first modification of the first embodiment. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22. FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 22. FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 22. FIG. 26 is a partially enlarged front view showing another modification of the control terminal. Fig. 27 is a cross-sectional view taken along line XXVII-XXVII in Fig. 26. Fig. 28 is a cross-sectional view taken along line XXVIII-XXVIII in Fig. 26. Fig. 29 is a cross-sectional view taken along line XXIX-XXIX in Fig. 26. Fig. 30 is a cross-sectional view taken along line XXX-XXX in Fig. 26.

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used merely for identification purposes and are not intended to necessarily assign any order to their objects.

[0012] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 20 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3, a first main terminal 41, a second main terminal 42, a third main terminal 43, a plurality of control terminals 45, and a plurality of wires 51, 52, 53, 54, 551, 552, 561, and 562. The semiconductor device A1 further includes a case 6, a heat sink 7, a sealing portion 81, and a lid 82.

[0014] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a plan view showing the semiconductor device A1. FIG. 3 is a plan view showing the semiconductor device A1, with the lid 82 and sealing portion 81 omitted for ease of understanding. FIG. 4 is a plan view showing the semiconductor device A1, with the case 6 omitted from the plan view of FIG. 3. FIG. 5 is an enlarged view showing the heat sink 7 and the first main terminal 41, second main terminal 42, and third main terminal 43 omitted from the plan view of FIG. 4. FIG. 6 is a front view showing the semiconductor device A1. FIG. 7 is a rear view showing the semiconductor device A1. FIG. 8 is a right side view showing the semiconductor device A1. FIG. 9 is a left side view showing the semiconductor device A1. FIG. 10 is a bottom view showing the semiconductor device A1. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 3. Fig. 14 is a cross-sectional view taken along line XIV-XIV in Fig. 3. Fig. 15 is a cross-sectional view taken along line XV-XV in Fig. 3. Fig. 16 is an enlarged perspective view of a holder 451 constituting the control terminal 45. Fig. 17 is a partially enlarged front view of the control terminal. Fig. 18 is a cross-sectional view taken along line XVIII-XVIII in Fig. 17. Fig. 19 is a cross-sectional view taken along line XIX-XIX in Fig. 17. Fig. 20 is a cross-sectional view taken along line XX-XX in Fig. 17.

[0015] As an example, in the description of the semiconductor device A1, the thickness direction of the support substrate 3 is referred to as the "thickness direction z." One direction perpendicular to the thickness direction z is referred to as the "first direction x." A direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y."

[0016] The multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B are electronic components that are central to the functionality of the semiconductor device A1. The constituent material of each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is a semiconductor material primarily composed of, for example, silicon carbide (SiC). This semiconductor material is not limited to SiC and may be silicon (Si), gallium nitride (GaN), diamond (C), or the like. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, a power semiconductor chip with switching function, such as a metal oxide semiconductor field effect transistor (MOSFET). In this embodiment, the first semiconductor elements 10A and the second semiconductor elements 10B are MOSFETs, but are not limited thereto and may be other transistors such as insulated gate bipolar transistors (IGBTs). Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is the same element. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.

[0017] 11 to 13, the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102. In each of the first semiconductor elements 10A and the second semiconductor elements 10B, the element main surface 101 and the element back surface 102 are spaced apart in the thickness direction z. The element main surface 101 faces the z1 side in the thickness direction z, and the element back surface 102 faces the z2 side in the thickness direction z.

[0018] In this embodiment, the semiconductor device A1 includes six first semiconductor elements 10A and six second semiconductor elements 10B. However, the number of first semiconductor elements 10A and the number of second semiconductor elements 10B are not limited to this configuration and may be changed as appropriate depending on the performance required of the semiconductor device A1. In the example shown in FIGS. 3 to 5, six first semiconductor elements 10A and six second semiconductor elements 10B are arranged. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be four, five, or seven or more. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be equal to or different from each other. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B is determined by the current capacity handled by the semiconductor device A1.

[0019] The semiconductor device A1 is configured, for example, as a half-bridge switching circuit. In this case, a plurality of first semiconductor elements 10A form an upper arm circuit of the semiconductor device A1, and a plurality of second semiconductor elements 10B form a lower arm circuit. In the upper arm circuit, the plurality of first semiconductor elements 10A are connected in parallel to each other. In the lower arm circuit, the first semiconductor elements 10A are connected in parallel to each other. In the lower arm circuit, the plurality of second semiconductor elements 10B are connected in parallel to each other. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridge layer.

[0020] As shown in FIGS. 3 to 5 and 11 , each of the multiple first semiconductor elements 10A is mounted on a first conductive portion 32A of a support substrate 3 (described later). Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via a conductive bonding material 19. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the element back surface 102 faces the first conductive portion 32A. Note that, unlike the present embodiment, the multiple first semiconductor elements 10A may be mounted on a metal member that is not part of the DBC substrate or the like. In this case, the metal member corresponds to the first conductive portion in the present disclosure. This metal member may be supported by, for example, the DBC substrate or the like.

[0021] As shown in FIGS. 3 to 5, 11, and 12, each of the multiple second semiconductor elements 10B is mounted on a second conductive portion 32B of a support substrate 3 (described later). Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via a conductive bonding material 19. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the element back surface 102 faces the second conductive portion 32B. Unlike the present embodiment, the multiple second semiconductor elements 10B may be mounted on a metal member that is not part of the DBC substrate or the like. In this case, the metal member corresponds to the second conductive portion in the present disclosure. This metal member may be supported by, for example, the DBC substrate or the like.

[0022] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B each have a first principal surface electrode 11, a second principal surface electrode 12, a third principal surface electrode 13, and a back surface electrode 15. The configurations of the first principal surface electrode 11, the second principal surface electrode 12, the third principal surface electrode 13, and the back surface electrode 15 described below are common to each of the first semiconductor elements 10A and each of the second semiconductor elements 10B. The first principal surface electrode 11, the second principal surface electrode 12, and the third principal surface electrode 13 are provided on the element main surface 101. The first principal surface electrode 11, the second principal surface electrode 12, and the third principal surface electrode 13 are insulated by an insulating film (not shown). The back surface electrode 15 is provided on the element back surface 102.

[0023] The first principal surface electrode 11 is, for example, a gate electrode, to which a drive signal (for example, a gate voltage) for driving the first semiconductor element 10A (second semiconductor element 10B) is input. In the first semiconductor element 10A (second semiconductor element 10B), the second principal surface electrode 12 is, for example, a source electrode, through which a source current flows. The third principal surface electrode 13 is, for example, a source sense electrode, through which a source current flows. In this embodiment, the third principal surface electrode 13 is composed of two separated regions when viewed in the thickness direction z. The back surface electrode 15 is, for example, a drain electrode, through which a drain current flows. The back surface electrode 15 covers the entire area (or substantially the entire area) of the element back surface 102. The back surface electrode 15 is, for example, composed of Ag (silver) plating.

[0024] When a drive signal (gate voltage) is input to the first principal surface electrode 11 (gate electrode), each first semiconductor element 10A (each second semiconductor element 10B) switches between a conductive state and a non-conductive state in response to the drive signal. In the conductive state, current flows from the back surface electrode 15 (drain electrode) to the second principal surface electrode 12 (source electrode), and in the non-conductive state, this current does not flow. In other words, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation. The semiconductor device A1 converts a DC voltage input between the first main terminal 41 and the second main terminal 42 into, for example, an AC voltage through the switching functions of the multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B, and outputs the AC voltage from the third main terminal 43. Each of the multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B is an example of a "semiconductor element."

[0025] 3 to 5, the semiconductor device A1 includes a thermistor 17. The thermistor 17 is used as a temperature detection sensor. Note that the semiconductor device A1 may include, for example, a temperature-sensitive diode in addition to the thermistor 17, or may not include the thermistor 17.

[0026] The support substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The specific configuration of the support substrate 3 is not limited in any way, and may be, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating substrate 31, a support conductor 32, and a back surface metal layer 33. The dimension of the support substrate 3 in the z direction is, for example, not less than 0.4 mm and not more than 3.0 mm.

[0027] The insulating substrate 31 is made of, for example, ceramics with excellent thermal conductivity. Examples of such ceramics include SiN (silicon nitride). The insulating substrate 31 is not limited to ceramics and may be an insulating resin sheet or the like. The insulating substrate 31 has, for example, a rectangular shape in a plan view. The dimension of the insulating substrate 31 in the thickness direction z is not particularly limited and is, for example, 0.05 mm or more and 1.0 mm or less.

[0028] As shown in FIGS. 3 to 5 , the support conductor 32 includes a first conductive portion 32A, a second conductive portion 32B, and a third conductive portion 32C. In this embodiment, the support conductor 32 further includes a first gate portion 326A, a second gate portion 326B, a first detection portion 327A, a second detection portion 327B, and a thermistor mounting portion 328. Each portion of the support conductor 32 is stacked on the upper surface of the insulating substrate 31 (the surface facing the z1 side in the thickness direction z). As shown in FIGS. 11 to 15 , each portion of the support conductor 32 (the first conductive portion 32A, the second conductive portion 32B, the third conductive portion 32C, the first gate portion 326A, the second gate portion 326B, the first detection portion 327A, the second detection portion 327B, and the thermistor mounting portion 328) has a main surface 320. The main surface 320 is a flat surface facing the z1 side in the thickness direction z. The constituent material of the support conductor 32 includes, for example, Cu (copper). The constituent material may include, for example, Al (aluminum) other than Cu (copper). The dimension of the support conductor 32 in the thickness direction z is not particularly limited and is, for example, 0.1 mm or more and 1.5 mm or less.

[0029] 11 , the first conductive portion 32A supports a plurality of first semiconductor elements 10A. As shown in FIG. 11 , the plurality of first semiconductor elements 10A are bonded to a main surface 320 of the first conductive portion 32A via conductive bonding material 19. The material of the conductive bonding material 19 is not particularly limited, and may be, for example, solder, a metal paste material, or a sintered metal.

[0030] 4 and 5 , the first conductive portion 32A has a first wiring portion 321, a second wiring portion 322, and a first connecting portion 325A. The first wiring portion 321 and the second wiring portion 322 are spaced apart from each other on the x1 side in the first direction x and the x2 side in the first direction x, and each extends in the second direction y. In this embodiment, the first wiring portion 321 is located at the end on the x1 side in the first direction x on the insulating substrate 31, and the second wiring portion 322 is located at the end on the x2 side in the first direction x on the insulating substrate 31.

[0031] The plurality of first semiconductor elements 10A are arranged in the first wiring portion 321 and the second wiring portion 322, with multiple elements arranged in each. In the illustrated example, three first semiconductor elements 10A are arranged in each of the first wiring portion 321 and the second wiring portion 322. The three first semiconductor elements 10A arranged in the first wiring portion 321 are spaced apart in the second direction y. The distance between adjacent first semiconductor elements 10A in the second direction y on the first wiring portion 321 is greater than the length of the first semiconductor elements 10A in the second direction y. The three first semiconductor elements 10A arranged in the second wiring portion 322 are similarly spaced apart in the second direction y. The distance between adjacent first semiconductor elements 10A in the second direction y on the second wiring portion 322 is greater than the length of the first semiconductor elements 10A in the second direction y.

[0032] The first wiring portion 321 has a first end portion 321a. The first end portion 321a is located on the y2 side of the first wiring portion 321 in the second direction y. The second wiring portion 322 has a second end portion 322a. The second end portion 322a is located on the y2 side of the second wiring portion 322 in the second direction y. The first connecting portion 325A is connected to both the first end portion 321a and the second end portion 322a. The first connecting portion 325A is located closer to the y2 side in the second direction y on the insulating substrate 31. In the example shown, the first connecting portion 325A is roughly U-shaped.

[0033] 12 and 13 , the second conductive portion 32B supports a plurality of second semiconductor elements 10B. As shown in FIG. 12 and FIG. 13 , the second conductive portion 32B has a main surface 320 to which the second semiconductor elements 10B are respectively bonded via conductive bonding material 19. The conductive bonding material 19 for bonding the first semiconductor elements 10A and the second semiconductor elements 10B to the main surface 320 is an example of a "second conductive bonding material."

[0034] 4 and 5 , the second conductive portion 32B has a third wiring portion 323, a fourth wiring portion 324, and a second connecting portion 325B. The third wiring portion 323 and the fourth wiring portion 324 are spaced apart from each other on the x1 side and the x2 side in the first direction x, and each extend in the second direction y. The third wiring portion 323 and the fourth wiring portion 324 are disposed between the first wiring portion 321 and the second wiring portion 322 in the first direction x.

[0035] The plurality of second semiconductor elements 10B are arranged in pairs on each of the third wiring portion 323 and the fourth wiring portion 324. In the illustrated example, three second semiconductor elements 10B are arranged on each of the third wiring portion 323 and the second wiring portion 322. The three second semiconductor elements 10B arranged on the third wiring portion 323 are spaced apart in the second direction y. The distance between adjacent second semiconductor elements 10B on the third wiring portion 323 in the second direction y is greater than the length of the second semiconductor elements 10B in the second direction y. The three second semiconductor elements 10B arranged on the fourth wiring portion 324 are similarly spaced apart in the second direction y. The distance between adjacent second semiconductor elements 10B on the fourth wiring portion 324 in the second direction y is greater than the length of the second semiconductor elements 10B in the second direction y.

[0036] The third wiring portion 323 has a third end portion 323a. The third end portion 323a is located on the y2 side of the third wiring portion 323 in the second direction y. The fourth wiring portion 324 has a fourth end portion 324a. The fourth end portion 324a is located on the y2 side of the fourth wiring portion 324 in the second direction y. The second connecting portion 325B is connected to both the third end portion 323a and the fourth end portion 324a. The second connecting portion 325B is located on the insulating substrate 31 closer to the y2 side in the second direction y.

[0037] In this embodiment, the multiple (three) first semiconductor elements 10A arranged on the first wiring portion 321 and the multiple (three) second semiconductor elements 10B arranged on the third wiring portion 323 are arranged alternately in the second direction y. In this disclosure, "alternately arranged" means that the multiple first semiconductor elements 10A on the first wiring portion 321 and the multiple second semiconductor elements 10B on the third wiring portion 323 are arranged with a shift in position in the second direction y without intentionally aligning them, and this also applies to the following description. Here, the first semiconductor elements 10A on the first wiring portion 321 and the second semiconductor elements 10B on the third wiring portion 323 may partially overlap when viewed in the first direction x. In the illustrated example, of the multiple first semiconductor elements 10A arranged in the first wiring portion 321 and the multiple second semiconductor elements 10B arranged in the third wiring portion 323, one first semiconductor element 10A and one second semiconductor element 10B partially overlap when viewed in the first direction x.

[0038] The plurality (three) of first semiconductor elements 10A arranged on the second wiring portion 322 and the plurality (three) of second semiconductor elements 10B arranged on the fourth wiring portion 324 are arranged alternately in the second direction y. The first semiconductor elements 10A on the second wiring portion 322 and the second semiconductor elements 10B on the fourth wiring portion 324 may partially overlap when viewed in the first direction x. In the illustrated example, the plurality of first semiconductor elements 10A arranged on the second wiring portion 322 and the plurality of second semiconductor elements 10B arranged on the fourth wiring portion 324 do not overlap when viewed in the first direction x.

[0039] In the semiconductor device A1, the multiple (three) first semiconductor elements 10A arranged on the first wiring portion 321 and the multiple (three) first semiconductor elements 10A arranged on the second wiring portion 322 are arranged alternately in the second direction y. The first semiconductor elements 10A on the first wiring portion 321 and the first semiconductor elements 10A on the second wiring portion 322 may partially overlap when viewed in the first direction x. In the illustrated example, of the multiple first semiconductor elements 10A arranged on the first wiring portion 321 and the multiple first semiconductor elements 10A arranged on the second wiring portion 322, one first semiconductor element 10A on the first wiring portion 321 and one first semiconductor element 10A on the second wiring portion 322 partially overlap when viewed in the first direction x.

[0040] 4 and 5 , at least a portion of third conductive portion 32C is disposed between third wiring portion 323 and fourth wiring portion 324 in first direction x. Third conductive portion 32C extends in second direction y. The above-described first conductive portion 32A, second conductive portion 32B, and third conductive portion 32C, together with multiple wires 51, 52, 53, and 54, form a path of a main circuit current switched by multiple first semiconductor elements 10A and multiple second semiconductor elements 10B.

[0041] 5 , the first gate portion 326A is electrically connected to the first main surface electrodes 11 of the plurality of first semiconductor elements 10A. The first gate portion 326A is arranged in a plurality of regions. In the example shown, the first gate portion 326A is arranged between the first wiring portion 321 and the third wiring portion 323, between the second wiring portion 322 and the fourth wiring portion 324, and between the third conductive portion 32C and the second connection portion 325B.

[0042] The first detection portion 327A is electrically connected to the third main surface electrodes 13 of the multiple first semiconductor elements 10A. The first detection portion 327A is arranged in multiple regions. In the example shown, the first detection portion 327A is arranged between the first wiring portion 321 and the third wiring portion 323, between the second wiring portion 322 and the fourth wiring portion 324, and between the third conductive portion 32C and the second connection portion 325B.

[0043] The second gate portion 326B is electrically connected to the first main surface electrodes 11 of the plurality of second semiconductor elements 10B. In the example shown, the second gate portion 326B is disposed between the third conductive portion 32C and the fourth wiring portion 324, and extends in the second direction y.

[0044] The second detection portion 327B is electrically connected to the third principal surface electrodes 13 of the plurality of second semiconductor elements 10B. In the example shown, the second detection portion 327B is disposed between the third conductive portion 32C and the fourth wiring portion 324, and extends in the second direction y.

[0045] 5, the thermistor mounting portions 328 are provided in pairs. The pair of thermistor mounting portions 328 are spaced apart from each other in the second direction y and mount the thermistor 17. The pair of thermistor mounting portions 328 are located near the corners of the insulating substrate 31.

[0046] The back surface metal layer 33 is formed on the lower surface (surface facing the z2 side in the thickness direction z) of the insulating substrate 31. The constituent material of the back surface metal layer 33 is the same as the constituent material of the support conductors 32. The back surface metal layer 33 has a bottom surface 332. The bottom surface 332 is a flat surface facing the z2 side in the thickness direction z. A heat sink 7, which will be described later, is attached to the bottom surface 332.

[0047] As shown in Figures 1 to 4, the first main terminal 41, the second main terminal 42, and the third main terminal 43 are external connection terminals provided on the semiconductor device A1. The first main terminal 41, the second main terminal 42, and the third main terminal 43 are each made of a plate-shaped metal plate. This metal plate contains, for example, Cu (copper) or a Cu (copper) alloy. The thickness of the metal plate is not particularly limited and is, for example, about 1.0 mm.

[0048] The first main terminal 41 and the second main terminal 42 are connected to a DC power supply located outside the semiconductor device A1. A DC voltage to be converted into power is input to the first main terminal 41 and the second main terminal 42. The first main terminal 41 is a positive terminal (P terminal), and the second main terminal 42 is a negative terminal (N terminal). The first main terminal 41 and the second main terminal 42 are located on the y1 side of the support conductor 32 (the first conductive portion 32A and the second conductive portion 32B) in the second direction y. The first main terminal 41 and the second main terminal 42 are supported by the case 6.

[0049] As shown in FIGS. 3 , 4 , 11 , and 13 , the first main terminal 41 has an external connection portion 411, an internal connection portion 412, and an intermediate portion 413. The external connection portion 411 is exposed from the semiconductor device A1 and has a flat plate shape perpendicular to the thickness direction z. A DC power cable or the like is connected to the external connection portion 411. The external connection portion 411 is supported by the case 6. The external connection portion 411 has a connection hole 411a penetrating in the thickness direction z. A fastening member such as a bolt is inserted into the connection hole 411a. A nut 419 is fixed to the z2 side of the external connection portion 411 in the thickness direction z. The nut 419 is positioned corresponding to the connection hole 411a, and a fastening member such as a bolt inserted into the connection hole 411a fits into the nut 419. Note that the surface of the external connection portion 411 may be nickel (Ni) plated.

[0050] The internal connection portion 412 is electrically connected to the first conductive portion 32A. In the illustrated example, the internal connection portion 412 has a comb-like shape that is electrically connected to the first wiring portion 321 and the second wiring portion 322 of the first conductive portion 32A. In the semiconductor device A1, the internal connection portion 412 has four teeth. The teeth are bent in the thickness direction z. Therefore, the teeth are hook-shaped when viewed in the first direction x. Two teeth of the internal connection portion 412 are electrically connected to the end of the first wiring portion 321 on the y1 side in the second direction y, and the other two teeth of the internal connection portion 412 are electrically connected to the end of the second wiring portion 322 on the y1 side in the second direction y. The method of electrically connecting the internal connection portion 412 is not limited, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. may be used as appropriate. The intermediate portion 413 interconnects the external connection portion 411 and the internal connection portion 412. The intermediate portion 413 has an L-shaped cross section in the first direction x.

[0051] The first main terminal 41 is electrically connected to the first conductive portion 32A, and is electrically connected to the back surface electrode 15 (drain electrode) of each first semiconductor element 10A via the first conductive portion 32A.

[0052] As shown in FIGS. 3 , 4 , 11 , and 12 , the second main terminal 42 has an external connection portion 421, an internal connection portion 422, and an intermediate portion 423. The external connection portion 421 is exposed from the semiconductor device A1 and has a flat plate shape perpendicular to the thickness direction z. A DC power cable or the like is connected to the external connection portion 421. The external connection portion 421 is supported by the case 6. The external connection portion 421 is disposed on the x1 side in the first direction x relative to the external connection portion 411 of the first main terminal 41. The external connection portion 421 has a connection hole 421a penetrating in the thickness direction z. A fastening member such as a bolt is inserted into the external connection portion 421. A nut 429 is fixed to the z2 side of the external connection portion 421 in the thickness direction z. The nut 429 is disposed corresponding to the connection hole 421a, and a fastening member such as a bolt inserted into the connection hole 421a fits into the nut 429. The surface of the external connection portion 421 may be nickel plated.

[0053] The internal connection portion 422 is electrically connected to the third conductive portion 32C. In the illustrated example, the internal connection portion 422 has a comb-like shape that is electrically connected to the third conductive portion 32C. In the semiconductor device A1, the internal connection portion 422 has four teeth, which are arranged along the first direction x. The teeth are bent in the thickness direction z. As a result, the teeth are hook-shaped when viewed in the first direction x. The teeth of the internal connection portion 412 are electrically connected to the end of the third conductive portion 32C on the y1 side in the second direction y. The method of electrically connecting the internal connection portion 422 is not limited, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. may be appropriately adopted. The intermediate portion 423 interconnects the external connection portion 421 and the internal connection portion 422. The cross section of the intermediate portion 423 in the first direction x is L-shaped.

[0054] 5, the third conductive portion 32C and the second main surface electrode 12 of each second semiconductor element 10B are electrically connected via a wire 53 (described later). The second main terminal 42 is electrically connected to the third conductive portion 32C, and is also electrically connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B via the third conductive portion 32C.

[0055] The third main terminal 43 is connected to a power supply target arranged outside the semiconductor device A1. The third main terminal 43 outputs an AC voltage converted by the first semiconductor element 10A and the second semiconductor element 10B. The third main terminal 43 is arranged on the y2 side in the second direction y with respect to the support conductor 32 (the first conductive portion 32A and the second conductive portion 32B). The third main terminal 43 is supported by the case 6.

[0056] As shown in Figures 3, 4, 12, and 13, the third main terminal 43 has an external connection portion 431, an internal connection portion 432, and an intermediate portion 433. The external connection portion 431 is exposed from the semiconductor device A1 and has a flat plate shape perpendicular to the thickness direction z. A cable or the like that is electrically connected to a power supply target is connected to the external connection portion 431. The external connection portion 431 has a connection hole 431a that penetrates in the thickness direction z. A fastening member such as a bolt is inserted into the connection hole 431a. The surface of the external connection portion 431 may be nickel-plated.

[0057] The internal connection portion 432 is electrically connected to the second conductive portion 32B. In the illustrated example, the internal connection portion 432 has a comb-like shape that is electrically connected to the second connecting portion 325B of the second conductive portion 32B. In the semiconductor device A1, the internal connection portion 432 has four teeth, which are arranged along the first direction x. The teeth are bent in the thickness direction z. Therefore, the teeth are hook-shaped when viewed in the first direction x. The teeth of the internal connection portion 432 are electrically connected to the second connecting portion 325B of the second conductive portion 32B. The method of electrically connecting the internal connection portion 432 is not limited, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. may be used as appropriate. The intermediate portion 433 interconnects the external connection portion 431 and the internal connection portion 432. The intermediate portion 433 is connected to the external connection portion 431 and extends continuously, and has a flat plate shape that is perpendicular to the thickness direction z. The intermediate portion 433 is supported by the case 6.

[0058] The third main terminal 43 is electrically connected to the second conductive portion 32B, and is electrically connected to the back surface electrode 15 (drain electrode) of each second semiconductor element 10B via the second conductive portion 32B.

[0059] Each of the control terminals 45 is a pin-shaped terminal for controlling the driving of each first semiconductor element 10A and each second semiconductor element 10B. Each of the control terminals 45 is, for example, a press-fit terminal. Each of the control terminals 45 is disposed on the main surface 320 of the support conductor 32 and extends toward the z1 side in the thickness direction z. The control terminals 45 include a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47C. The first control terminals 46A to 46E are used for controlling each first semiconductor element 10A, etc. The second control terminals 47A to 47C are used for controlling each second semiconductor element 10B, etc.

[0060] The first control terminals 46A to 46E are supported by the support substrate 3 (support conductors 32). The first control terminals 46A to 46E are arranged on the support substrate 3 toward the y2 side in the second direction y.

[0061] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first semiconductor elements 10A. A drive signal for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A (for example, a gate voltage is applied). The first control terminal 46A is supported by the first gate portion 326A.

[0062] The first control terminal 46B is a terminal (source sense terminal) for detecting source signals of the multiple first semiconductor elements 10A. The first control terminal 46B detects the voltage (voltage corresponding to the source current) applied to each second principal surface electrode 12 (source electrode) of the multiple first semiconductor elements 10A. The first control terminal 46B is supported by the first detection portion 327A.

[0063] The first control terminal 46C is a terminal (drain sense terminal) for detecting drain signals of the multiple first semiconductor elements 10A. The first control terminal 46C detects a voltage (a voltage corresponding to a drain current) applied to each back surface electrode 15 (drain electrode) of the multiple first semiconductor elements 10A. The first control terminal 46C is supported by the first conductive portion 32A (the first end 321a of the first wiring portion 321).

[0064] The first control terminal 46D and the first control terminal 46E are terminals that are electrically connected to the thermistor 17. The first control terminal 46D and the first control terminal 46E are supported by the thermistor mounting portion 328, respectively.

[0065] The second control terminals 47A to 47C are supported by the support substrate 3 (support conductors 32). The second control terminals 47A to 47C are arranged on the support substrate 3 toward the y1 side in the second direction y.

[0066] The second control terminal 47A is a terminal (gate terminal) for inputting a drive signal for the plurality of second semiconductor elements 10B. A drive signal for driving the plurality of second semiconductor elements 10B is input to the second control terminal 47A (for example, a gate voltage is applied). The second control terminal 47A is supported by the second gate portion 326B.

[0067] The second control terminal 47B is a terminal (source sense terminal) for detecting source signals of the multiple second semiconductor elements 10B. The second control terminal 47B detects the voltage (voltage corresponding to the source current) applied to each second main surface electrode 12 (source electrode) of the multiple second semiconductor elements 10B. The second control terminal 47B is supported by the second detection portion 327B.

[0068] The second control terminal 47C is a terminal (drain sense terminal) for detecting drain signals of the multiple second semiconductor elements 10B. The second control terminal 47C detects the voltage (voltage corresponding to the drain current) applied to each back surface electrode 15 (drain electrode) of the multiple second semiconductor elements 10B. The second control terminal 47C is supported by the second conductive portion 32B (fourth wiring portion 324).

[0069] Each of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47C) includes a holder 451 and a metal pin 452.

[0070] The holder 451 is made of a conductive material. As shown in FIGS. 14 and 15 , the holder 451 is bonded to the main surface 320 of each part of the support conductor 32 (such as the first gate portion 326A, the first detection portion 327A, and the first conductive portion 32A) via a conductive bonding material 459. The conductive bonding material 459 used to bond the holder 451 to the main surface 320 is an example of a “first conductive bonding material.”

[0071] As shown in FIGS. 16 to 20 , the holder 451 includes a cylindrical portion 453, a first flange portion 454, and a second flange portion 455, and has a cylindrical shape as a whole. The holder 451 has an outer peripheral surface 451a and an inner peripheral surface 451b. The outer peripheral surface 451a is a surface that faces radially outward of the holder 451 when viewed in the thickness direction z. The inner peripheral surface 451b faces the opposite side to the outer peripheral surface 451a and faces radially inward of the holder 451 when viewed in the thickness direction z. The outer peripheral surface 451a includes a first outer peripheral surface 454a that belongs to the first flange portion 454 and a second outer peripheral surface 453a that belongs to the cylindrical portion 453. The inner peripheral surface 451b includes a first inner peripheral surface 454b that belongs to the first flange portion 454 and a second inner peripheral surface 453b that belongs to the cylindrical portion 453.

[0072] The tubular portion 453 extends in the thickness direction z and is, for example, cylindrical. The tubular portion 453 has a second outer peripheral surface 453a and a second inner peripheral surface 453b. The first flange portion 454 is connected to an end of the tubular portion 453 on the z1 side in the thickness direction z. The first flange portion 454 extends radially outward from the tubular portion 453 as viewed in the thickness direction z. In the illustrated example, the first flange portion 454 is annular as viewed in the thickness direction z. The first flange portion 454 has a first outer peripheral surface 454a and a first inner peripheral surface 454b. The second flange portion 455 is connected to an end of the tubular portion 453 on the z2 side in the thickness direction z. The second flange portion 455 extends radially outward from the tubular portion 453 as viewed in the thickness direction z. In this embodiment, the second flange 455 is joined to the main surface 320 (support conductor 32 ) via a conductive bonding material 459 .

[0073] A plurality of protrusions 451c are provided on the inner circumferential surface 451b of the holder 451. The protrusions 451c protrude radially inward from the inner circumferential surface 451b. In the present embodiment, the plurality of protrusions 451c include a plurality of first protrusions 454c. The first protrusions 454c are provided on the first inner circumferential surface 454b of the first flange portion 454 among the protrusions 451c. In the present embodiment, a plurality (four) of first protrusions 454c are provided on the inner circumferential surface 451b of the holder 451 (the first inner circumferential surface 454b of the first flange portion 454).

[0074] The multiple (four) first protrusions 454c include two first protrusions 454c that face each other across the axis of the holder 451. In the example shown in the figure, two sets of two first protrusions 454c that face each other across the axis of the holder 451 are provided, and one set and the other set are shifted by 90° in the circumferential direction around the axis of the holder 451.

[0075] The method for forming the multiple first protrusions 454c is not particularly limited, and they may be formed by embossing, for example. In the illustrated example, multiple (four) first recesses 454d are formed on the first outer peripheral surface 454a of the first flange 454. The multiple first recesses 454d correspond to the multiple first protrusions 454c, respectively, and are traces left when the multiple first protrusions 454c were formed.

[0076] The metal pin 452 is a rod-shaped member extending in the thickness direction z. In the present embodiment, as shown in Fig. 18 , the cross section of the metal pin 452 perpendicular to the thickness direction z is rectangular. The metal pin 452 is supported by being press-fitted into the holder 451. The metal pin 452 is inserted through at least the first flange portion 454 and the cylindrical portion 453 of the holder 451. The metal pin 452 is electrically connected to the support conductor 32 via the holder 451 and the conductive bonding material 459.

[0077] 19 and 20 , when the metal pin 452 is press-fitted into the holder 451, an inner peripheral surface 451b of the holder 451 and an outer peripheral surface 452a of the metal pin 452 are in appropriate contact with each other. As shown in Fig. 19 , the metal pin 452 is press-fitted into the holder 451 in such a manner that the four corners of the metal pin 452 are circumferentially shifted by 45° from the multiple (four) first protrusions 454c provided on the first inner peripheral surface 454b of the first flange 454.

[0078] As shown in FIG. 19 , multiple first protrusions 454c provided on the first inner circumferential surface 454b of the first flange 454 abut against the outer circumferential surface 452a of the metal pin 452. Pin recesses 452d are formed on the outer circumferential surface 452a of the metal pin 452 at locations where the first protrusions 454c abut. In FIGS. 19 and 20 , the original cross-sectional shape of the metal pin 452 is indicated by dotted lines. For ease of illustration, FIGS. 19 and 20 show the four corners of the metal pin 452 as being crushed radially inward relative to the inner circumferential surface 451b. However, the inner circumferential surface 451b may be expanded radially outward by the four corners of the metal pin 452. In addition, the four corners of the metal pin 452 may be crushed radially inward relative to the inner peripheral surface 451b, and the four corners of the metal pin 452 may expand the inner peripheral surface 451b radially outward.

[0079] Although the above description has been given of the case where the plurality of first convex portions 454c are formed by embossing, the plurality of first convex portions 454c may be formed simultaneously with press-fitting the metal pin 452 into the holder 451. In this case, when press-fitting the metal pin 452, the first convex portions 454c and the first concave portions 454d are formed by pressing the first outer peripheral surface 454a of the annular first flange 454, on which the first convex portions 454c and the first concave portions 454d are not formed, radially inward with a pressing member.

[0080] The multiple wires 51, 52, 53, and 54 shown in Figures 4 and 5, together with the first conductive portion 32A, the second conductive portion 32B, and the third conductive portion 32C, form a path for the main circuit current switched by the multiple first semiconductor elements 10A and the multiple second semiconductor elements 10B.

[0081] The multiple wires 51 are conductive members that electrically connect the multiple first semiconductor elements 10A to the third wiring portion 323. Each of the multiple wires 51 is connected to the second main surface electrode 12 (source electrode) of the first semiconductor element 10A arranged on the first wiring portion 321 and the third wiring portion 323, thereby electrically connecting the second main surface electrode 12 of the first semiconductor element 10A to the third wiring portion 323. In the illustrated example, multiple (four) wires 51 are connected to one first semiconductor element 10A. Each wire 51 has a first portion 511 and a second portion 512.

[0082] The first portion 511 is a bonding end portion bonded to the second principal surface electrode 12 of the first semiconductor element 10A. The second portion 512 is a bonding end portion bonded to the third wiring portion 323. As shown in FIG. 5 , at least one of the second portions 512 of the multiple wires 51 is disposed on the third wiring portion 323 between adjacent second semiconductor elements 10B in the second direction y. The wires 51 are made of, for example, aluminum (Al) or copper (Cu). The constituent material, diameter, and number of the wires 51 are not limited. The wires 51 are conductive members connected between the second principal surface electrode 12 (source electrode) of the first semiconductor element 10A and the third wiring portion 323. However, such conductive members may be formed, for example, from a metal plate instead of the wires 51.

[0083] The multiple wires 52 are conductive members that electrically connect the multiple first semiconductor elements 10A to the fourth wiring portion 324. Each of the multiple wires 52 is connected to the second main surface electrode 12 (source electrode) of the first semiconductor element 10A arranged on the second wiring portion 322 and the fourth wiring portion 324, thereby electrically connecting the second main surface electrode 12 of the first semiconductor element 10A to the fourth wiring portion 324. In the illustrated example, multiple (four) wires 52 are connected to one first semiconductor element 10A. Each wire 52 has a third portion 521 and a fourth portion 522.

[0084] The third portion 521 is a bonding end portion bonded to the second principal surface electrode 12 of the first semiconductor element 10A. The fourth portion 522 is a bonding end portion bonded to the fourth wiring portion 324. As shown in FIG. 5 , at least one of the fourth portions 522 of the multiple wires 52 is disposed on the fourth wiring portion 324 between adjacent second semiconductor elements 10B in the second direction y. The wires 52 are made of, for example, aluminum (Al) or copper (Cu). The constituent material, diameter, and number of the wires 52 are not limited. The wires 52 are conductive members connected between the second principal surface electrode 12 (source electrode) of the first semiconductor element 10A and the fourth wiring portion 324. However, such conductive members may be formed, for example, from a metal plate instead of the wires 52.

[0085] The multiple wires 53 are conductive members that electrically connect the multiple second semiconductor elements 10B and the third conductive portion 32C. Each of the multiple wires 53 is connected to the second principal surface electrode 12 (source electrode) of the second semiconductor element 10B arranged on the third wiring portion 323 and the third conductive portion 32C, thereby electrically connecting the second principal surface electrode 12 of the second semiconductor element 10B and the third conductive portion 32C. In the illustrated example, multiple (four) wires 53 are connected to one second semiconductor element 10B. The wires 53 are made of, for example, aluminum (Al) or copper (Cu). The material, diameter, and number of the wires 53 are not limited. The wires 53 are conductive members that connect the second principal surface electrode 12 (source electrode) of the second semiconductor element 10B and the third conductive portion 32C. However, such conductive members may be formed, for example, from a metal plate instead of the wires 53.

[0086] The multiple wires 54 are conductive members that connect the multiple second semiconductor elements 10B to the third conductive portion 32C. Each of the multiple wires 54 is connected to the second principal surface electrode 12 (source electrode) of the second semiconductor element 10B arranged on the fourth wiring portion 324 and the third conductive portion 32C, thereby connecting the second principal surface electrode 12 of the second semiconductor element 10B to the third conductive portion 32C. In the illustrated example, multiple (four) wires 54 are connected to one second semiconductor element 10B. The wires 54 are made of, for example, aluminum (Al) or copper (Cu). The material, diameter, and number of the wires 54 are not limited. The wires 54 are conductive members that connect the second principal surface electrode 12 (source electrode) of the second semiconductor element 10B to the third conductive portion 32C. However, such conductive members may be formed, for example, from a metal plate instead of the wires 54.

[0087] The plurality of wires 551 are conductive members that electrically connect the first control terminal 46A (gate terminal) and the first main surface electrodes 11 (gate electrodes) of the plurality of first semiconductor elements 10A. The plurality of wires 551 include wires that are connected to the first main surface electrode 11 of the first semiconductor element 10A and the first gate portion 326A, and wires that are connected to first gate portions 326A that are spaced apart from each other. The material of the wires 551 is not particularly limited and may be, for example, aluminum.

[0088] The plurality of wires 552 are conductive members that electrically connect the first control terminal 46B (source sense terminal) and the third main surface electrodes 13 (source sense electrodes) of the plurality of first semiconductor elements 10A. The plurality of wires 552 include wires that are connected between the third main surface electrode 13 of the first semiconductor element 10A and the first detection unit 327A, wires that are connected between the second main surface electrode 12 (source electrode) of the first semiconductor element 10A and the first detection unit 327A, and wires that are connected between the first detection units 327A that are spaced apart from each other. The material of the wires 552 is not particularly limited and may be, for example, aluminum.

[0089] The plurality of wires 561 are conductive members that electrically connect the second control terminal 47A (gate terminal) and the first main surface electrodes 11 (gate electrodes) of the plurality of second semiconductor elements 10B. Each of the plurality of wires 561 is connected to the first main surface electrode 11 of the second semiconductor element 10B and the second gate portion 326B. The material of the wires 561 is not particularly limited and may be, for example, aluminum.

[0090] The plurality of wires 562 are conductive members that electrically connect the second control terminal 47B (source sense terminal) and the plurality of third main surface electrodes 13 (source sense electrodes) of the second semiconductor elements 10B. Each of the plurality of wires 562 is connected to the third main surface electrode 13 of the second semiconductor element 10B and the second detection unit 327B. The material of the wires 562 is not particularly limited and may be, for example, aluminum.

[0091] 3, 6 to 9, and 11 to 15, the case 6 is an electrically insulating member that surrounds the support substrate 3 when viewed in the thickness direction z. The material of the case 6 is not particularly limited, and is a synthetic resin with excellent heat resistance, such as PPS (polyphenylene sulfide). The case 6 has a pair of first side walls 611, a pair of second side walls 612, a plurality of mounting portions 62, and terminal support portions 63, 64.

[0092] 3, 14, and 15, the pair of first side walls 611 are spaced apart from each other in the first direction x. The pair of first side walls 611 are arranged along both the second direction y and the thickness direction z.

[0093] 3 and 11 to 13, the pair of second side walls 612 are spaced apart from each other in the second direction y. The pair of second side walls 612 are arranged along both the first direction x and the thickness direction z. Both ends of the pair of second side walls 612 in the first direction x are connected to the pair of first side walls 611.

[0094] 2 and 3 , the multiple mounting portions 62 are portions provided at the four corners of the case 6 when viewed in the thickness direction z. Each of the multiple mounting portions 62 has a through hole formed therethrough in the thickness direction z, and a mounting member 621 is fitted into each of the through holes. Each mounting member 621 has a mounting hole 621a formed therethrough in the thickness direction z. The semiconductor device A10 can be attached to an external device (not shown), for example, by fitting a fastening member (not shown) into the mounting hole 621a.

[0095] 3 , 8 , and 11 , the terminal support portion 63 protrudes outward in the second direction y (toward the y1 side in the second direction y) from the second side wall 612 on the y1 side in the second direction y. The first main terminal 41 and the second main terminal 42 are supported by the terminal support portion 63. The terminal support portion 64 protrudes outward in the second direction y (toward the y2 side in the second direction y) from the second side wall 612 on the y2 side in the second direction y. The terminal support portion 64 supports the third main terminal 43.

[0096] As shown in Figures 6 to 15, the heat sink 7 has a plate portion 71 and multiple fins 72. The plate portion 71 is a flat metal plate and has a generally rectangular shape when viewed in the thickness direction z. The multiple fins 72 extend from the surface of the plate portion 71 on the z2 side in the thickness direction z toward the z2 side in the thickness direction z. The multiple fins 72 are arranged at appropriate intervals in the first direction x and the second direction y. The constituent material of the heat sink 7 is not particularly limited, and may be, for example, a metal material containing aluminum (Al) or copper (Cu).

[0097] As shown in FIGS. 11 to 15 , the bottom surface 332 of the support substrate 3 (rear surface metal layer 33) is bonded to the surface of the plate portion 71 facing the z1 side in the thickness direction z via a bonding material 39. This allows the support substrate 3 to be supported by the heat sink 7. The bonding material 39 may be any material capable of bonding the rear surface metal layer 33 to the plate portion 71 (heat sink 7). To efficiently transfer heat from the rear surface metal layer 33 to the heat sink 7, the bonding material 39 is preferably one with higher thermal conductivity, such as silver paste, copper paste, or solder. However, the bonding material 39 may also be an insulating material such as an epoxy resin or a silicone resin. As can be seen from FIG. 10 and other figures, the case 6 is attached to the plate portion 71 with bolts 73 inserted through through-holes formed at appropriate locations.

[0098] 11 to 15, the sealing portion 81 is housed in an area surrounded by the case 6 and the heat sink 7. The plate portion 71 covers the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The constituent material of the sealing portion 81 is not particularly limited, and may be, for example, silicone gel.

[0099] The lid 82 is a member that closes the area housing the sealing portion 81 from the z1 side in the thickness direction z. The lid 82 is made of, for example, an electrically insulating synthetic resin. In the illustrated example, a metal plate 821 made of, for example, copper (Cu) is embedded inside the lid 82. As shown in FIGS. 14 and 15 , multiple openings 822 are formed in appropriate positions in the lid 82. The openings 822 penetrate the lid 82 in the thickness direction z, and the control terminals 45 (metal pins 452) extend through the openings 822, protruding beyond the lid 82 toward the z2 side in the thickness direction z. In the illustrated example, locking claws 611a are provided in appropriate positions on the first side wall 611 of the case 6, and the locking claws 611a lock the lid 82 when the lid 82 is attached.

[0100] Next, the operation of this embodiment will be described.

[0101] In each control terminal 45, an inner peripheral surface 451b of the holder 451 into which the metal pin 452 is press-fitted is provided with a plurality of protrusions 451c protruding radially inward. The plurality of protrusions 451c abut against an outer peripheral surface 452a of the metal pin 452. This configuration can increase the holding force of the holder 451 for the metal pin 452 in each control terminal 45. Therefore, the reliability of the semiconductor device A1 having such control terminals 45 (press-fit terminals) can be improved.

[0102] In the present embodiment, the plurality of protrusions 451c (first protrusions 454c) include two first protrusions 454c that face each other across the axis of the holder 451. This configuration can further increase the pressing and holding force of the holder 451 on the metal pin 452. Furthermore, in the present embodiment, two sets of two protrusions 451c (first protrusions 454c) that face each other across the axis of the holder 451 are provided. This configuration is preferable for increasing the holding force of the holder 451 on the metal pin 452, and is suitable for improving the reliability of the semiconductor device A1.

[0103] A pin recess 452d is formed at a portion of the outer peripheral surface 452a of the metal pin 452 where the first protrusion 454c abuts. This configuration further enhances the fitting and holding force of the metal pin 452 by the holder 451, which is preferable in terms of improving reliability.

[0104] In the present embodiment, a plurality of first protrusions 454c are provided on the first inner circumferential surface 454b of the first flange 454. The first flange 454 is located at the end of the holder 451 on the z1 side in the thickness direction z. This configuration provides excellent visibility of the first flange 454. This improves the workability when press-fitting the metal pin 452 into the holder 451.

[0105] First Modification of First Embodiment: FIGS. 21 to 25 show a semiconductor device according to a first modification of the first embodiment. FIG. 21 is a plan view similar to FIG. 4 of the above embodiment, showing a semiconductor device A11 of this modification. FIG. 22 is a partially enlarged front view of a control terminal 45 in the semiconductor device A11. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22. FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 22. FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 22. Note that in the figures from FIG. 21 onwards, elements that are the same as or similar to those in the semiconductor device A1 of the above embodiment are given the same reference numerals as in the above embodiment, and descriptions thereof will be omitted where appropriate. Furthermore, the configurations of the various parts in each of the modifications and embodiments from FIG. 21 onwards can be combined with each other as appropriate to the extent that no technical contradictions arise.

[0106] In the semiconductor device A11 of this modification, the configuration of the holder 451 of the control terminal 45 is different from that of the semiconductor device A1 of the above embodiment.

[0107] In this modified example, the plurality of protrusions 451c provided on the inner circumferential surface 451b of the holder 451 includes a plurality of second protrusions 453c. The second protrusions 453c are provided on the second inner circumferential surface 453b of the cylindrical portion 453 among the protrusions 451c. In this modified example, a plurality (eight) of second protrusions 453c are provided on the inner circumferential surface 451b of the holder 451 (the second inner circumferential surface 453b of the cylindrical portion 453).

[0108] The plurality (eight) of second protrusions 453c include two second protrusions 453c that face each other across the axis of the holder 451. In the illustrated example, multiple pairs of two second protrusions 453c that face each other across the axis of the holder 451 are provided. The two second protrusions 453c shown in FIG. 24 and the two second protrusions 453c shown in FIG. 25 are shifted by 90° in circumferential positions around the axis of the holder 451. In this modified example, the second protrusions 453c shown in FIG. 24 and the second protrusions 453c shown in FIG. 25 are different in circumferential positions and positions in the thickness direction z on the second inner circumferential surface 453b.

[0109] The method for forming the plurality of second protrusions 453c is not particularly limited, and they may be formed, for example, by embossing. In the illustrated example, a plurality of (eight) second recesses 453d are formed on the second outer peripheral surface 453a of the cylindrical portion 453. The plurality of second recesses 453d correspond to the plurality of second protrusions 453c, respectively, and are traces left when the plurality of second protrusions 453c were formed.

[0110] 24 and 25 , when the metal pin 452 is press-fitted into the holder 451, an inner peripheral surface 451b of the holder 451 and an outer peripheral surface 452a of the metal pin 452 are in appropriate contact with each other. As shown in Fig. 24 and 25 , the metal pin 452 is press-fitted into the holder 451 in such a manner that the four corners of the metal pin 452 are circumferentially shifted by 45° from the plurality of (eight) second protrusions 453c provided on the second inner peripheral surface 453b of the cylindrical portion 453.

[0111] As shown in Figures 24 and 25 , multiple second protrusions 453c provided on the second inner circumferential surface 453b of the cylindrical portion 453 abut against the outer circumferential surface 452a of the metal pin 452. Pin recesses 452d are formed on the outer circumferential surface 452a of the metal pin 452 at locations where the second protrusions 453c abut. In Figures 24 and 25 , the original cross-sectional shape of the metal pin 452 is represented by dotted lines. Note that, for convenience of illustration, in Figures 24 and 25 , the four corners of the metal pin 452 are shown as being crushed radially inward relative to the inner circumferential surface 451b; however, the inner circumferential surface 451b may be expanded radially outward by the four corners of the metal pin 452. In addition, the four corners of the metal pin 452 may be crushed radially inward relative to the inner peripheral surface 451b, and the four corners of the metal pin 452 may expand the inner peripheral surface 451b radially outward.

[0112] In the control terminal 45 of this modified example, an inner peripheral surface 451b of the holder 451 into which the metal pin 452 is press-fitted is provided with a plurality of protrusions 451c that protrude radially inward. The plurality of protrusions 451c abut against an outer peripheral surface 452a of the metal pin 452. This configuration can increase the holding force of the holder 451 for the metal pin 452 in each control terminal 45. Therefore, the reliability of the semiconductor device A11 having such control terminals 45 (press-fit terminals) can be improved.

[0113] In this modified example, the plurality of protrusions 451c (second protrusions 453c) include two second protrusions 453c that face each other across the axis of the holder 451. This configuration can further increase the pressing and holding force of the holder 451 on the metal pin 452. Furthermore, in this modified example, the plurality of second protrusions 453c include two second protrusions 453c that are located at different circumferential positions and different positions in the thickness direction z on the second inner circumferential surface 453b. This configuration in which the plurality of second protrusions 453c are dispersedly arranged on the second inner circumferential surface 453b is preferable for increasing the holding force of the holder 451 on the metal pin 452 and is suitable for improving the reliability of the semiconductor device A11.

[0114] A pin recess 452d is formed at a portion of the outer circumferential surface 452a of the metal pin 452 where the second protrusion 453c abuts. This configuration further enhances the engagement and retention force of the metal pin 452 by the holder 451, which is preferable in terms of improving reliability.

[0115] 26 to 30 show other modified examples of the control terminal 45. FIG. 26 is a partially enlarged front view showing the control terminal 45 of this modified example. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 26. FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG. 26. FIG. 29 is a cross-sectional view taken along line XXIX-XXIX in FIG. 26. FIG. 30 is a cross-sectional view taken along line XXX-XXX in FIG. 26.

[0116] In the control terminal 45 of this modified example, the multiple protrusions 451c provided on the inner circumferential surface 451b of the holder 451 include multiple first protrusions 454c and multiple second protrusions 453c. The first protrusions 454c are provided on the first inner circumferential surface 454b of the first flange 454 among the protrusions 451c. The second protrusions 453c are provided on the second inner circumferential surface 453b of the cylindrical portion 453 among the protrusions 451c. In the example shown in FIGS. 26 to 30, multiple (four) first protrusions 454c and multiple (eight) second protrusions 453c are provided on the inner circumferential surface 451b of the holder 451 (the first inner circumferential surface 454b of the first flange 454 and the second inner circumferential surface 453b of the cylindrical portion 453).

[0117] The multiple (four) first protrusions 454c include two first protrusions 454c that face each other across the axis of the holder 451. In the example shown in Fig. 28, two sets of two first protrusions 454c that face each other across the axis of the holder 451 are provided, and one set and the other set are shifted by 90° in the circumferential direction around the axis of the holder 451.

[0118] The plurality (eight) of second protrusions 453c include two second protrusions 453c that face each other across the axis of the holder 451. In the illustrated example, multiple pairs of two second protrusions 453c that face each other across the axis of the holder 451 are provided. The two second protrusions 453c shown in FIG. 29 and the two second protrusions 453c shown in FIG. 30 are shifted by 90° in circumferential positions around the axis of the holder 451. Furthermore, the second protrusions 453c shown in FIG. 29 and the second protrusions 453c shown in FIG. 30 are different in circumferential positions and positions in the thickness direction z on the second inner circumferential surface 453b.

[0119] The method for forming the multiple first protrusions 454c and the multiple second protrusions 453c is not particularly limited, and they may be formed by embossing, for example. In the illustrated example, multiple (four) first recesses 454d are formed on the first outer surface 454a of the first flange 454. The multiple first recesses 454d correspond to the multiple first protrusions 454c, respectively, and are traces left behind when the multiple first protrusions 454c were formed. Furthermore, multiple (eight) second recesses 453d are formed on the second outer surface 453a of the cylindrical portion 453. The multiple second recesses 453d correspond to the multiple second protrusions 453c, respectively, and are traces left behind when the multiple second protrusions 453c were formed.

[0120] In the control terminal 45 of this modified example, as shown in FIG. 27 , the cross-sectional shape of the metal pin 452 perpendicular to the thickness direction z is circular. The outer diameter (diameter of the outer peripheral surface 452a) of the metal pin 452 is smaller than the inner diameter (diameter of the inner peripheral surface 451b) of the holder 451. In this modified example, when the metal pin 452 is inserted into the first flange portion 454 and the cylindrical portion 453, the metal pin 452 is press-fitted and supported in the holder 451 while the multiple first protrusions 454c and the multiple second protrusions 453c abut against the outer peripheral surface 452a of the metal pin 452. As shown in FIG. 28 , a pin recess 452d is formed in the outer peripheral surface 452a of the metal pin 452 at a position where the first protrusion 454c abuts. Furthermore, as shown in FIGS. 29 and 30 , a pin recess 452d is formed in the outer peripheral surface 452a of the metal pin 452 at a position where the second protrusion 453c abuts. 28 to 30, the original cross-sectional shape of the metal pin 452 is indicated by a dotted line.

[0121] In the control terminal 45 of this modified example, an inner peripheral surface 451b of the holder 451 into which the metal pin 452 is press-fitted is provided with a plurality of protrusions 451c that protrude radially inward. The plurality of protrusions 451c abut against an outer peripheral surface 452a of the metal pin 452. This configuration can increase the holding force of the holder 451 for the metal pin 452 in each control terminal 45. Therefore, in a semiconductor device having such control terminals 45 (press-fit terminals), the reliability can be improved.

[0122] In this modified example, the plurality of protrusions 451c (first protrusions 454c) include two first protrusions 454c that face each other across the axis of the holder 451. This configuration can further increase the pressing and holding force of the holder 451 on the metal pin 452. Furthermore, in this modified example, two sets of two protrusions 451c (first protrusions 454c) that face each other across the axis of the holder 451 are provided. This configuration is preferable for increasing the holding force of the holder 451 on the metal pin 452, and is suitable for improving the reliability of the semiconductor device.

[0123] In this modified example, the plurality of protrusions 451c (second protrusions 453c) include two second protrusions 453c that face each other across the axis of the holder 451. This configuration can further increase the pressing and holding force of the holder 451 on the metal pin 452. Furthermore, in this modified example, the plurality of second protrusions 453c include two second protrusions 453c that are located at different circumferential positions and different positions in the thickness direction z on the second inner circumferential surface 453b. This configuration in which the plurality of second protrusions 453c are dispersedly arranged on the second inner circumferential surface 453b is preferable for increasing the holding force of the holder 451 on the metal pin 452 and is suitable for improving the reliability of the semiconductor device.

[0124] Pin recesses 452d are formed at the portions of the outer peripheral surface 452a of the metal pin 452 that contact the first protrusions 454c and the second protrusions 453c. This configuration further enhances the engagement and retention force of the metal pin 452 by the holder 451, which is preferable in terms of improving reliability.

[0125] In this modified example, a plurality of first protrusions 454c are provided on the first inner circumferential surface 454b of the first flange 454. The first flange 454 is located at the end of the holder 451 on the z1 side in the thickness direction z. This configuration provides excellent visibility of the first flange 454. This improves the workability when press-fitting the metal pin 452 into the holder 451.

[0126] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0127] The present disclosure includes the embodiments described in the following appendices.

[0128] Supplementary Note 1. A semiconductor device comprising: a support substrate having a main surface facing one side in a thickness direction; a holder disposed on the main surface and having conductivity; and at least one terminal including a metal pin press-fitted into an inner peripheral surface of the holder and protruding beyond the holder to one side in the thickness direction, wherein the inner peripheral surface of the holder is provided with at least one protrusion protruding radially inward, and the at least one protrusion abuts against an outer peripheral surface of the metal pin. Supplementary Note 2. The semiconductor device according to Supplementary Note 1, wherein a plurality of the protrusions are provided on the inner peripheral surface of the holder. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein the plurality of protrusions include two of the protrusions facing each other across the axis of the holder. Supplementary Note 4. The semiconductor device according to Supplementary Note 2, wherein the holder includes a cylindrical portion extending in the thickness direction and a first flange portion connected to one end of the cylindrical portion in the thickness direction, and the inner peripheral surface of the holder includes the first inner peripheral surface belonging to the first flange portion and a second inner peripheral surface belonging to the cylindrical portion. Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the plurality of protrusions includes at least one first protrusion provided on the first inner peripheral surface. Supplementary Note 6. The semiconductor device according to Supplementary Note 5, wherein the first inner peripheral surface is provided with a plurality of first protrusions, and the plurality of first protrusions includes two of the first protrusions facing each other across the axis of the holder. Supplementary Note 7. The semiconductor device according to any of Supplements 4 to 6, wherein the plurality of protrusions includes at least one second protrusion provided on the second inner peripheral surface. Supplementary Note 8. The semiconductor device according to Supplementary Note 7, wherein a plurality of the second convex portions are provided on the second inner circumferential surface, and the plurality of second convex portions include two of the second convex portions that are located at different circumferential positions on the second inner circumferential surface and different positions in the thickness direction.Supplementary Note 9. The semiconductor device according to any of Supplements 1 to 8, wherein a pin concave portion is formed on the outer circumferential surface of the metal pin at a location where the at least one convex portion abuts.Supplementary Note 10. The semiconductor device according to any of Supplements 1 to 9, wherein a cross-sectional shape of the metal pin perpendicular to the thickness direction is quadrangular.Supplementary Note 11. The semiconductor device according to any of Supplements 1 to 9, wherein a cross-sectional shape of the metal pin perpendicular to the thickness direction is circular.Appendix 12. The semiconductor device according to any one of Appendixes 1 to 11, further comprising at least one semiconductor element electrically connected to the at least one terminal, wherein the at least one semiconductor element is disposed on the main surface of the support substrate. Appendix 13. The semiconductor device according to Appendix 12, wherein the support substrate comprises an insulating substrate and a support conductor stacked on one side of the insulating substrate in the thickness direction and having the main surface, wherein the holder of each of the at least one terminal is bonded to the main surface via a first conductive bonding material, and each of the at least one semiconductor element is bonded to the main surface via a second conductive bonding material. Appendix 14. The semiconductor device according to Appendix 12 or 13, wherein the at least one terminal is a control terminal for controlling the at least one semiconductor element. Appendix 15. The semiconductor device according to any one of Appendixes 12 to 14, further comprising a sealing portion covering the at least one semiconductor element and a portion of each of the at least one terminal.

[0129] A1, A11: semiconductor device 10A: first semiconductor element 10B: second semiconductor element 101: element principal surface 102: element rear surface 11: first principal surface electrode 12: second principal surface electrode 13: third principal surface electrode 15: rear surface electrode 17: thermistor 19: conductive bonding material (second conductive bonding material) 3: supporting substrate 31: insulating substrate 32: supporting conductor 32A: first conductive portion 32B: second conductive portion 32C: third conductive portion 320: principal surface 321: first wiring portion 321a: first end portion 322: second wiring portion 322a: second end portion 323: third wiring portion 323a: third end portion 324: fourth wiring portion 324a: fourth end portion 325A: first connecting portion 325B: second connecting portion 326A: First gate portion 326B: Second gate portion 327A: First detection portion 327B: Second detection portion 328: Thermistor mounting portion 329: First relay portion 33: Back surface metal layer 332: Bottom surface 39: Bonding material 41: First main terminal 411: External connection portion 411a: Connection hole 412: Internal connection portion 413: Intermediate portion 419: Nut 42: Second main terminal 42 421: External connection portion 421a: Connection hole 422: Internal connection portion 423: Intermediate portion 429: Nut 43: Third main terminal 431: External connection portion 431a: Connection hole 432: Internal connection portion 433: Intermediate portion 45: Control terminal 451: Holder 451a: Outer peripheral surface 451b: Inner peripheral surface 451c: Convex portion 452: Metal pin 452a: Outer peripheral surface 452d: Pin concave portion 453: Cylindrical portion 453a: Second outer peripheral surface 453b: Second inner peripheral surface 453c: Second convex portion 453d: Second concave portion 454: First flange portion 454a: First outer peripheral surface 454b: First inner peripheral surface 454c: First convex portion 454d: First concave portion 455: Second flange portion 459: Conductive bonding material (first conductive bonding material) 46A, 46B, 46C, 46D, 46E: First control terminal 47A, 47B, 47C: Second control terminal 51: Wire 511: First part 512: Second part 52: Wire 521: Third part 522: Fourth part 53, 54, 551, 552, 561,562: Wire 6: Case 611: First side wall 611a: Locking claw 612: Second side wall 62: Mounting portion 621: Mounting member 621a: Mounting hole 63, 64: Terminal support portion 7: Heat sink 71: Plate portion 72: Fin 73: Bolt 81: Sealing portion 82: Lid 821: Metal plate 822: Opening,

Claims

1. A support substrate having a main surface facing one side in a thickness direction; a holder that is disposed on the main surface and has conductivity; and at least one terminal including a metal pin that is press-fitted into an inner peripheral surface of the holder and protrudes beyond the holder to one side in the thickness direction, At least one protrusion protruding radially inward is provided on the inner circumferential surface of the holder, The at least one protrusion abuts against an outer circumferential surface of the metal pin.

2. The semiconductor device according to claim 1 , wherein the inner circumferential surface of the holder is provided with a plurality of the protrusions.

3. The semiconductor device according to claim 2 , wherein the plurality of protrusions include two protrusions opposed to each other across an axis of the holder.

4. the holder includes a cylindrical portion extending in the thickness direction and a first flange portion connected to one end of the cylindrical portion in the thickness direction, The semiconductor device according to claim 2 , wherein the inner circumferential surface of the holder includes a first inner circumferential surface belonging to the first flange portion and a second inner circumferential surface belonging to the cylindrical portion.

5. The semiconductor device according to claim 4 , wherein the plurality of protruding portions include at least one first protruding portion provided on the first inner circumferential surface.

6. The first inner circumferential surface is provided with a plurality of the first protrusions, The semiconductor device according to claim 5 , wherein the plurality of first protrusions include two of the first protrusions opposed to each other across an axis of the holder.

7. 7. The semiconductor device according to claim 4, wherein the plurality of protruding portions include at least one second protruding portion provided on the second inner circumferential surface.

8. The second inner circumferential surface is provided with a plurality of the second protrusions, The semiconductor device according to claim 7 , wherein the plurality of second protrusions include two second protrusions that are located at different circumferential positions on the second inner circumferential surface and at different positions in the thickness direction.

9. The semiconductor device according to claim 1 , wherein a pin recess is formed in the outer circumferential surface of the metal pin at a portion where the at least one protrusion abuts.

10. The semiconductor device according to claim 1 , wherein a cross-sectional shape of said metal pin perpendicular to said thickness direction is rectangular.

11. The semiconductor device according to claim 1 , wherein a cross-sectional shape of said metal pin perpendicular to said thickness direction is circular.

12. and at least one semiconductor element electrically connected to the at least one terminal. The semiconductor device according to claim 1 , wherein the at least one semiconductor element is disposed on the main surface of the supporting substrate.

13. the supporting substrate includes an insulating substrate and a supporting conductor laminated on one side of the insulating substrate in the thickness direction and having the main surface; the holder of each of the at least one terminal is joined to the main surface via a first conductive bonding material; The semiconductor device according to claim 12 , wherein each of the at least one semiconductor elements is bonded to the main surface via a second conductive bonding material.

14. 14. The semiconductor device according to claim 12, wherein the at least one terminal is a control terminal for controlling the at least one semiconductor element.

15. The semiconductor device according to claim 12 , further comprising a sealing portion that covers the at least one semiconductor element and a portion of each of the at least one terminal.