Semiconductor electricity storage material, electricity storage body, layered electricity storage body

JPWO2025009274A1Pending Publication Date: 2025-01-09
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Patent Information

Application Number
JP2025531411
Authority / Receiving Office
JP · JP
Patent Type
Applications
Priority Date
2023-07-05
Filing Date
2024-05-16
Publication Date
2025-01-09

AI Technical Summary

Technical Problem

Conventional semiconductor materials, both inorganic and organic, pose environmental hazards due to the presence of toxic elements and are not recyclable, failing to combine semiconductor and electricity storage properties effectively.

Method used

Development of semiconductor power storage materials utilizing chitin or chitosan fibers, which form electric double layers for proton transfer and exhibit both semiconductor and power storage characteristics, with a structure comprising crystallized or amorphous fibers and metal electrodes for enhanced performance.

Benefits of technology

The chitin or chitosan-based semiconductor power storage materials demonstrate high dielectric domain structures, enabling efficient power storage and semiconductor functions, with improved electrical resistivity and capacitance, suitable for various electronic applications while being environmentally friendly.

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Abstract

[Problem] To provide: a semiconductor electricity storage material formed from a bio-material and having semiconductor properties and electricity storage properties; an electricity storage body; and a layered electricity storage body. [Solution] The present invention has fibers containing chitin or chitosan as the primary component, is in the form of a sheet, and has a density of 2 g / cm3 or less. Preferably the fibers are crystallized or amorphous fibers. Preferably the fibers are chitosan nanofibers having a width of 3 to 400 nm, or are formed from bundles or particle-like aggregates of chitosan fibers. Preferably the semiconductor is an n-type bulk semiconductor and preferably has N-type negative resistance.
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