Method for forming a dopant-containing film

Abstract

In a film forming method for forming a film of a metal compound containing a metal dopant on a substrate (S) in order to control the dopant concentration or its distribution in the film, the method includes a first step (P1) of sputter depositing the metal compound on the substrate in a metal mode with a flow rate of a reaction gas less than a predetermined value, and a second step (P2) of sputter depositing the metal dopant on the substrate in a reaction mode with the flow rate of the reaction gas equal to or greater than the predetermined value, the steps being carried out simultaneously. After the film formation in the second step is completed and, simultaneously therewith or after a lapse of a predetermined time, the film formation in the first step is completed, the method includes a fourth step (P4) of continuing the supply of the reaction gas to the substrate for a predetermined time.

Claims

1. In a method for forming a film of a metal compound containing a metal dopant on a substrate, The first step involves sputtering the metal compound onto the substrate in a metal mode where the flow rate of the reaction gas is less than a predetermined value, A second step of sputtering the metal dopant onto the substrate in a reaction mode in which the flow rate of the reaction gas is equal to or greater than the predetermined value, and a step of carrying out the second step in parallel, A third step is performed in which the metal compound is sputtered onto the substrate in the metal mode after the second step, A film formation method comprising a fourth step of reacting the film formed on the substrate after the third step.

2. The film of the metal compound containing the metal dopant is The metal compound is the main component as the primary film-forming material, The aforementioned metal dopant, as a dopant for the main film-forming material, is contained in an amount greater than 0 atoms (several percent) and less than or equal to 5 atoms (several percent). In the first and third steps, the metal compound, which is the main film-forming material, is sputter-deposited in the metal mode. The method for forming a film according to claim 1, wherein in the second step, the metal dopant as the dopant is sputter-deposited in the reaction mode.

3. The deposition chamber into which the substrate to be deposited is placed, A pressure reducer for reducing the pressure in the aforementioned film deposition chamber to a predetermined pressure, A discharge gas introduction device for introducing discharge gas into the aforementioned film deposition chamber, A first sputtering electrode is provided, on which a first target, which will be the main film-forming material, is mounted and which is positioned facing the substrate, A first chimney covers the first space in front of the first target and the first sputtering electrode in a manner that can be opened and closed by a first shutter, A second target, which serves as a dopant for the main film-forming material, is mounted on a second sputtering electrode positioned opposite the substrate, A second chimney covers the second space in front of the second target and the second sputtering electrode in a manner that can be opened and closed by a second shutter, A discharge gas introduction device for introducing discharge gas into the first space and the film deposition chamber, A reaction gas introduction device for introducing the reaction gas into the film deposition chamber through the second space, A DC power supply that supplies power to the first sputtering electrode and the second sputtering electrode, An electrode voltage controller controls the rectangular wave applied from the DC power supply to the first sputter electrode and the second sputter electrode, respectively. A shutter opening / closing controller that controls the opening and closing of the first shutter and the second shutter, A gas introduction controller that controls the discharge gas introduction device and the reaction gas introduction device, respectively, A reactive sputtering apparatus is used, which includes a control unit that comprehensively controls the electrode voltage controller, the shutter opening / closing controller, and the gas introduction controller. A method for forming a film on a substrate, wherein the film mainly consists of the main film-forming material and contains the dopant, A first step involves introducing a discharge gas into the deposition chamber and the reaction gas into the second space, applying a pulse voltage from the DC power supply to the first sputtering electrode and the second sputtering electrode, closing the second shutter and opening the first shutter, thereby forming an ultrathin film of the first target on the substrate. A second step involves opening the second shutter in accordance with the conditions of the first step, and simultaneously forming an ultrathin film of the first target and an ultrathin film of the second target on the substrate. A third step involves closing the second shutter in accordance with the conditions of the second step and forming an ultrathin film of the first target on the substrate, A film-forming method comprising at least the following steps: a fourth step in which, after the third step, the first shutter is closed in accordance with the conditions of the third step, and the film formed on the substrate is reacted.

4. The deposition chamber into which the substrate to be deposited is placed, A pressure reducer for reducing the pressure in the aforementioned film deposition chamber to a predetermined pressure, A discharge gas introduction device for introducing discharge gas into the aforementioned film deposition chamber, A first sputtering electrode is provided, on which a first target, which will be the main film-forming material, is mounted and which is positioned facing the substrate, A first chimney covers the first space in front of the first target and the first sputtering electrode in a manner that can be opened and closed by a first shutter, A second target, which serves as a dopant for the main film-forming material, is mounted on a second sputtering electrode positioned opposite the substrate, A second chimney covers the second space in front of the second target and the second sputtering electrode in a manner that can be opened and closed by a second shutter, A discharge gas introduction device for introducing discharge gas into the first space and the film deposition chamber, A reaction gas introduction device for introducing the reaction gas into the film deposition chamber through the second space, A DC power supply that supplies power to the first sputtering electrode and the second sputtering electrode, An electrode voltage controller controls the rectangular wave applied from the DC power supply to the first sputter electrode and the second sputter electrode, respectively. A shutter opening / closing controller that controls the opening and closing of the first shutter and the second shutter, A gas introduction controller that controls the discharge gas introduction device and the reaction gas introduction device, respectively, A reactive sputtering apparatus is used, which includes a control unit that comprehensively controls the electrode voltage controller, the shutter opening / closing controller, and the gas introduction controller. A method for forming a film on a substrate, wherein the film mainly consists of the main film-forming material and contains the dopant, The first step involves introducing a discharge gas into the film deposition chamber and the reaction gas into the second space, applying a pulse voltage to the first sputtering electrode from the DC power supply, stopping the application of the DC voltage to the second sputtering electrode, opening the first shutter and the second shutter, and forming an ultrathin film of the first target on the substrate. A second step involves applying a pulse voltage to the second sputtering electrode under the conditions of the first step, thereby simultaneously forming an ultrathin film of the first target and an ultrathin film of the second target on the substrate. A third step involves stopping the application of a DC voltage to the second sputtering electrode under the conditions of the second step, and forming an ultrathin film of the first target on the substrate. A film-forming method comprising at least the following steps: a fourth step in which, after the third step, the first shutter is closed in accordance with the conditions of the third step, and the film formed on the substrate is reacted.

5. The deposition chamber into which the substrate to be deposited is placed, A pressure reducer for reducing the pressure in the aforementioned film deposition chamber to a predetermined pressure, A discharge gas introduction device for introducing discharge gas into the aforementioned film deposition chamber, A first sputtering electrode is provided, on which a first target, which will be the main film-forming material, is mounted and which is positioned facing the substrate, A first chimney covers the first space in front of the first target and the first sputtering electrode in a manner that can be opened and closed by a first shutter, A second target, which serves as a dopant for the main film-forming material, is mounted on a second sputtering electrode positioned opposite the substrate, A second chimney covers the second space in front of the second target and the second sputtering electrode in a manner that can be opened and closed by a second shutter, A discharge gas introduction device for introducing discharge gas into the first space and the film deposition chamber, A reaction gas introduction device for introducing the reaction gas into the film deposition chamber through the second space, A DC power supply that supplies power to the first sputtering electrode and the second sputtering electrode, An electrode voltage controller controls the rectangular wave applied from the DC power supply to the first sputter electrode and the second sputter electrode, respectively. A shutter opening / closing controller that controls the opening and closing of the first shutter and the second shutter, A gas introduction controller that controls the discharge gas introduction device and the reaction gas introduction device, respectively, A reactive sputtering apparatus is used, which includes a control unit that comprehensively controls the electrode voltage controller, the shutter opening / closing controller, and the gas introduction controller. A method for forming a film on a substrate, wherein the film mainly consists of the main film-forming material and contains the dopant, The first step involves introducing a discharge gas into the film deposition chamber and the reaction gas into the second space, applying a pulse voltage to the first sputtering electrode from the DC power supply, stopping the application of the DC voltage to the second sputtering electrode, opening the first shutter and the second shutter, and forming an ultrathin film of the first target on the substrate. A second step involves applying a pulse voltage to the second sputtering electrode under the conditions of the first step, thereby simultaneously forming an ultrathin film of the first target and an ultrathin film of the second target on the substrate. A third step involves stopping the application of a DC voltage to the second sputtering electrode under the conditions of the second step, and forming an ultrathin film of the first target on the substrate. A film formation method comprising at least the following steps: a fourth step, after the third step, stopping the application of a pulse voltage to the first sputtering electrode under the conditions of the third step, and allowing the film formed on the substrate to react.

6. The electrode voltage controller is, A first pulse wave conversion switch is connected between the DC power supply and the first sputtering electrode and converts the DC voltage applied to the first sputtering electrode into a pulse wave voltage, It includes a second pulse wave conversion switch connected between the DC power supply and the second sputtering electrode, which converts the DC voltage applied to the second sputtering electrode into a pulse wave voltage, The aforementioned control unit is A film deposition method according to any one of claims 3 to 5, wherein a pulse control signal pattern corresponding to a first sputtering target power supplied to the first sputtering electrode, a second sputtering target power supplied to the second sputtering electrode, target opening and closing timings for the first shutter and the second shutter, and target introduction timings for the discharge gas and the reaction gas introduced into the film deposition chamber is programmable, and a programmable oscillator controls the first pulse wave conversion switch, the second pulse wave conversion switch, the shutter opening and closing controller, and the gas introduction controller according to the programmed pulse control signal pattern.

7. A film-forming method according to any one of claims 3 to 5, wherein the first step, the second step, the third step, and the fourth step are repeated until a predetermined film thickness is achieved.

8. The method for forming a film according to any one of claims 3 to 5, wherein the film, which mainly consists of the aforementioned main film-forming material, contains the dopant in an amount of more than 0 atoms in several percent and 5 atoms in several percent or less.

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