Cleaning composition for parts of dry etching process for semiconductor and cleaning method of parts for dry etching process of semiconductor using the cleaning compostion

Abstract

The present invention relates to a cleaning composition for semiconductor dry etching process components and a cleaning method for semiconductor dry etching process components using the same, which can effectively remove contaminants present on components used in a dry etching process during a semiconductor manufacturing process in a short period of time without damaging the components. According to the present invention, a cleaning composition for semiconductor dry etching process components for cleaning contaminants on components of semiconductor dry etching process equipment is provided, characterized by comprising a first compositional material of the ketone class and a second compositional material of an organic solvent.

Description

Technology Field

[0001] The present invention relates to a cleaning composition for a semiconductor dry etching process component and a cleaning method for a semiconductor dry etching process component using the same. More specifically, the invention relates to a cleaning composition for a semiconductor dry etching process component and a cleaning method for a semiconductor dry etching process component using the same, which can effectively remove contaminants present on a component used in a dry etching process during a semiconductor manufacturing process in a short period of time without damaging the component. Background Technology

[0003] Generally, semiconductor devices are manufactured by depositing thin films that perform various functions onto the surface of a wafer and patterning them to form various circuit geometries.

[0004] The process for manufacturing such semiconductor devices is largely composed of several unit processes, such as a deposition process for forming a material film on a semiconductor substrate, an etching process for forming the material film into a predetermined pattern, and a planarization (CMP: Chemical Mechanical Polishing) process for polishing the wafer surface in batches to eliminate step height after depositing an interlayer insulating film on the wafer, as well as a wafer cleaning process for removing impurities and an ion implantation process.

[0005] For example, the etching process is a process for removing unnecessary parts while leaving necessary parts of the entire deposited material film, and can be broadly classified into wet etching, which patterns the material film using solution chemicals, and dry etching, which patterns the material film using gas plasma, ion beams, or sputtering without using solution chemicals.

[0006] In other words, the etching process can be broadly classified into wet etching, which chemically removes the top layer of a wafer by immersing the wafer in a wet bath containing chemicals that can effectively remove the top layer of the wafer to be removed, or by spraying those chemicals onto the surface of the wafer, and dry etching, which uses gaseous etching gases such as plasma etching, ion beam etching, and reactive ion etching.

[0007] In order to manufacture semiconductor devices, various unit processes as described above are repeated. Each of these unit processes uses a specific process facility to perform the process, and typically, the process is carried out in a chamber, which is a sealed reaction vessel.

[0008] In particular, in the case of an etching chamber in which plasma and etching gas are used, an aluminum oxide film is formed on the inner wall of the chamber as an insulating film, and such an etching chamber is equipped with various components including a liner that protects the inner wall of the chamber.

[0009] Figure 1 is a drawing showing the types of liners, which are components provided in the etching chamber of a general semiconductor dry etching process equipment.

[0010] Components used in the semiconductor dry etching process, such as the liner mentioned above, accumulate process contaminants during the process, and accordingly, it is necessary to clean the process contaminants regularly or periodically after the process.

[0011] Components used in semiconductor dry etching processes, such as liners, generate contaminants such as modified organic or inorganic compounds caused by etching gases (Cl, O2, CF4, etc.), for example, organic compounds or polymers modified by fluorine, organic compounds or polymers modified by chlorine, or Si-based inorganic compounds.

[0012] The method for cleaning components used in the semiconductor dry etching process, such as conventional liners, involved dipping them in pure water (DI Water) for more than one hour and then proceeding with a polishing cleaning process, and if contaminants were not removed, the process was repeated.

[0013] However, conventional cleaning methods for components used in semiconductor dry etching processes had the problem of difficulty in removing contaminants and requiring a significant amount of time. In particular, modified organic materials were fluoropolymerized, posing a problem in that they could not be removed by general cleaning solutions. Prior art literature

[0015] Republic of Korea Published Patent Application No. 10-1998-0037087 (Published Aug. 05, 1998) Republic of Korea Published Patent Application No. 10-2010-0093339 (Published Aug. 25, 2010) Republic of Korea Registered Patent Application No. 10-1027612 (Published Apr. 06, 2011) Republic of Korea Registered Patent Application No. 10-0855463 (Published Sep. 01, 2008) The problem to be solved

[0016] Accordingly, the present invention, which aims to solve the aforementioned conventional problems, provides a cleaning composition for semiconductor dry etching process components and a cleaning method for semiconductor dry etching process components using the same, which can effectively remove contaminants present on components used in the dry etching process during semiconductor manufacturing in a relatively short time without damaging the components.

[0017] The problems solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0019] According to one aspect of the present invention for achieving the above-mentioned objectives and other features of the present invention, a cleaning composition for a semiconductor dry etching process component for cleaning contaminants of a component of a semiconductor dry etching process equipment is provided, characterized by comprising a ketone-based solution as a first compositional substance.

[0020] According to another aspect of the present invention, a cleaning composition for a semiconductor dry etching process component for cleaning contaminants of a component of a semiconductor dry etching process equipment is provided, characterized by comprising a first compositional material of the ketone class and a second compositional material of an organic solvent.

[0021] In one aspect or another aspect of the present invention, the first compositional material may be a combination of one or more selected from acetone, methylethylketone, diethyl ketone, methylisopropyl methyl ketone, butyl methyl ketone, methylisobutylmethyl ketone, methylamine ketone, cyclopentanone, cyclohexanone, and cycloheptanone.

[0022] In another aspect of the present invention, the second compositional material may be composed of a polar aprotic solvent.

[0023] In another aspect of the present invention, the second compositional material may be a combination of one or more selected from N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, dimethyl sulfoxide, dimethylacetamide, dimethylformamide, tetramethylene sulfone, gamma-butyrolactone, dimethyl propanamide, acetone, and butyrolactone.

[0024] In another aspect of the present invention, the cleaning composition may further comprise at least one of water and a surfactant.

[0025] In another aspect of the present invention, when the cleaning composition further comprises water, the first compositional material may be 50 wt% or more, the second compositional material may be 1 to 50 wt% or less, and the water may be the remainder in a mixing ratio.

[0026] In another aspect of the present invention, where the cleaning composition further comprises a surfactant, the surfactant may be mixed in an amount of less than 1 part by weight per 100 parts by weight of the mixture of the first compositional material, the second compositional material, and water.

[0027] In one aspect of the present invention, the cleaning composition further comprises at least one of water and a surfactant, and when the cleaning composition further comprises only water, the first compositional material is composed of a mixing ratio of 50 wt% or more and water is the remainder, and when the cleaning composition further comprises only a surfactant, the surfactant is composed of a mixing ratio of less than 1 part by weight per 100 parts by weight of the first compositional material, and when the cleaning composition further comprises both water and a surfactant, the surfactant may be mixed in an amount of less than 1 part by weight per 100 parts by weight of the mixture of the first compositional material and water.

[0028] According to another aspect of the present invention, a cleaning method for a semiconductor dry etching process component used in a semiconductor dry etching process is provided, comprising: a cleaning component cleaning step in which the cleaning component is immersed in a cleaning tank containing a cleaning solution which is a first compositional substance, a ketone solution, or a cleaning solution which is a first compositional substance of ketones and a second compositional substance of an organic solvent; and a cleaning component post-treatment step in which the cleaning component, after cleaning is completed, is post-treated including a drying treatment.

[0029] In another aspect of the present invention, in the cleaning step of the cleaning component, the cleaning solution may further include at least one of water and a surfactant.

[0030] In another aspect of the present invention, the cleaning step of the cleaning component may be performed at room temperature for a period of time from 1 hour to 8 hours. Effects of the invention

[0032] The cleaning composition for semiconductor dry etching process components and the cleaning method for semiconductor dry etching process components using the same according to the present invention provide the following effects.

[0033] First, the present invention has the effect of removing contaminants with high cleaning power without damaging the base material of components such as liners used in semiconductor dry etching process equipment.

[0034] Second, the present invention has the effect of effectively removing organic and inorganic modified contaminants, particularly modified organic contaminants, present in the components of semiconductor dry etching process equipment.

[0035] Third, the present invention has the effect of improving economic efficiency by reliably removing contaminants while enabling removal in a short time compared to conventional cleaning methods.

[0036] The effects of the present invention are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below. Brief explanation of the drawing

[0038] Figure 1 is a drawing showing the types of liners, which are components provided in the etching chamber of a general semiconductor dry etching process equipment. FIG. 2 is a flowchart schematically illustrating a cleaning process for a semiconductor dry etching process component using a cleaning composition for a semiconductor dry etching process component according to the present invention. Figure 3 is a diagram showing the process of removing (decomposing) contaminants by a cleaning composition according to the present invention. Figure 4 is a diagram illustrating the mechanism of removing contaminants by a cleaning composition according to the present invention. Figure 5 is a table showing the cleaning results by the cleaning composition according to the present invention. Specific details for implementing the invention

[0039] Further objects, features, and advantages of the present invention can be more clearly understood from the following detailed description and the accompanying drawings.

[0040] Before providing a detailed description of the present invention, it should be understood that the present invention is capable of various modifications and may have various embodiments, and that the examples described below and illustrated in the drawings are not intended to limit the present invention to specific embodiments, but rather include all modifications, equivalents, and substitutions that fall within the spirit and scope of the present invention.

[0041] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0042] The terms used in this specification are used merely to describe specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0043] Furthermore, in the description referring to the attached drawings, identical components are assigned the same reference numeral regardless of drawing symbols, and redundant descriptions thereof are omitted. In describing the present invention, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the present invention, such detailed description is omitted.

[0044] Hereinafter, a cleaning composition for semiconductor dry etching process components according to a preferred embodiment of the present invention and a cleaning method for semiconductor dry etching process components using the same will be described.

[0045] First, a cleaning composition for a semiconductor dry etching process component according to the present invention will be described in detail.

[0046] A cleaning composition for a semiconductor dry etching process component according to the present invention is a cleaning composition for a dry etching process component for cleaning contaminants (or contaminant components) on a component of a dry etching process equipment, and, in one embodiment, comprises a first compositional material consisting of ketones and a second compositional material consisting of a solvent of an organic material.

[0047] In the present invention, the first compositional material may preferably be a combination of one or at least two selected from acetone, methylethylketone, diethyl ketone, methylisopropyl methyl ketone, butyl methyl ketone, methylisobutylmethyl ketone, methylamine ketone, cyclopentanone, cyclohexanone, and cycloheptanone, and is not particularly limited as long as it is a ketone composed of a hydrocarbon derivative in which two functional groups are connected by a carbonyl group.

[0048] Such a first compositional material penetrates between layers of contaminants, particularly thin film-like contaminants in the form of stacked lumps, and acts to dissolve the interlayer material.

[0049] Furthermore, the second compositional material is preferably composed of a polar aprotic solvent.

[0050] In the present invention, the polar aprotic solvent is one or a combination of at least two selected from N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, dimethyl sulfoxide, dimethylacetamide, dimethylformamide, tetramethylene sulfone, gamma-butyrolactone, dimethyl propanamide, acetone, and butyrolactone, and is not particularly limited as long as it is an organic solvent.

[0051] This second compositional material, together with the first compositional material, dissolves the soluble material between the membranes of the contaminant and acts to swell and peel off the insoluble modified polymer material.

[0052] Meanwhile, the cleaning composition for a semiconductor dry etching process component according to the present invention may further include at least one of water (pure water) and a surfactant as a third compositional material in addition to the first compositional material and the second compositional material described above.

[0053] The surfactant of the third compositional material above may be a known surfactant used for cleaning. Preferably, in the present invention, the surfactant may be an ether-based surfactant, an ester-based surfactant, or an ether-ester-based surfactant. For example, the surfactant may be one in which the component is nonionic. As a nonionic surfactant, at least one type selected from polyoxyalkylene alkyl ether, polyoxyalkylene alkylphenyl ether, polyoxyalkylene alkyl fatty acid ester, polyoxyalkylene arylphenyl ether, polyoxyalkylene sorbitan fatty acid ester, sorbitan fatty acid ester, and polyoxyalkylene may be used.

[0054] In the cleaning composition for a semiconductor dry etching process component of the present invention, when the above-mentioned water is further included, the first compositional material may be 50 wt% or more, preferably 60 to 95 wt%, more preferably 70 to 80 wt%, and the second compositional material may be 1 to less than 50 wt%, preferably 5 to 40 wt%, more preferably 20 to 30 wt%, and the mixture may be composed of the remainder being water.

[0055] Here, it was confirmed through experiments that when the first compositional material is less than 50 wt%, the cleaning performance is reduced, and when the second compositional material is less than 1 wt% or 50 wt% or more, there is a problem with reduced compatibility of the cleaning solution or reduced cleaning performance.

[0056] In addition, when the surfactant, which is the third compositional material, is further included, it is preferable that the third compositional material be mixed in an amount of less than 1 part by weight per 100 parts by weight of the mixed cleaning solution of the first compositional material, the second compositional material, and water. It was confirmed through experiments that when the surfactant, which is the third compositional material, is mixed in an amount of 1 part by weight or more, there is a problem with reduced cleaning performance.

[0057] This third compositional material, a surfactant, may be included in a cleaning composition that does not contain water, and in this case, it is preferable to mix it in an amount of less than 1 part by weight per 100 parts by weight of the first compositional material and the second compositional material.

[0058] Meanwhile, in the present invention, the cleaning composition for a semiconductor dry etching process component may consist of the first compositional material alone. In other words, the cleaning composition for a semiconductor dry etching process component of the present invention may consist of a ketone solution.

[0059] In this case, the ketone solution may further include at least one of water and a surfactant. When only water is further included, the first compositional material is composed of a mixing ratio of 50 wt% or more and water as the remainder, and when only the surfactant is further included, the surfactant is composed of a mixing ratio of less than 1 part by weight per 100 parts by weight of the first compositional material. Additionally, when both water and the surfactant are included, the surfactant may be mixed in an amount of less than 1 part by weight per 100 parts by weight of the mixture of the first compositional material and water.

[0060] Next, a cleaning method for a semiconductor dry etching process component using a cleaning composition for a semiconductor dry etching process component according to the present invention will be described in detail with reference to FIG. 2.

[0061] FIG. 2 is a flowchart schematically illustrating a cleaning process for a semiconductor dry etching process component using a cleaning composition for a semiconductor dry etching process component according to the present invention.

[0062] A cleaning method for a semiconductor dry etching process component using a cleaning composition for a semiconductor dry etching process component according to the present invention is a method for cleaning contaminants (or contaminant components) on a semiconductor dry etching process component (hereinafter abbreviated as "cleaning component") used in a semiconductor dry etching process, and as shown in FIG. 2, comprises: a cleaning component cleaning step (S100) in which a cleaning component is immersed in a cleaning tank containing a cleaning solution which is a first compositional substance, a ketone solution, or a second compositional substance which is a solvent of an organic substance and a first compositional substance composed of ketones, and is treated for a predetermined time at a predetermined temperature; and a cleaning component post-treatment step (S200) in which a cleaning component, having completed the cleaning component cleaning step (S100), is removed from the cleaning tank and post-treated.

[0063] In the cleaning step (S100) of the cleaning component above, the first compositional material may preferably be a combination of one or at least two selected from acetone, methylethylketone, diethyl ketone, methylisopropyl methyl ketone, butyl methyl ketone, methylisobutylmethyl ketone, methylamine ketone, cyclopentanone, cyclohexanone, and cycloheptanone, and is not particularly limited as long as it is a ketone composed of a hydrocarbon derivative in which two functional groups are connected by a carbonyl group. This first compositional material acts to penetrate between layers of contaminants, particularly contaminants in the form of stacked lumps of thin films, and to dissolve the interlayer material.

[0064] Furthermore, the second compositional material is preferably composed of a polar aprotic solvent. The polar aprotic solvent is one or a combination of at least two selected from N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, dimethyl sulfoxide, dimethylacetamide, dimethylformamide, tetramethylene sulfone, gamma-butyrolactone, dimethyl propanamide, acetone, and butyrolactone, and is not particularly limited as long as it is an organic solvent. This second compositional material, together with the first compositional material, acts to dissolve soluble substances between the membranes of the contaminant and to swell and peel off insoluble modified polymer materials.

[0065] In addition, in the cleaning step (S100) of the cleaning components, the cleaning solution may further include at least one of water (pure water) and a surfactant as a third compositional substance.

[0066] The surfactant of the third compositional material above may be a known surfactant used for cleaning. Preferably, in the present invention, the surfactant may be an ether-based surfactant, an ester-based surfactant, or an ether-ester-based surfactant. For example, the surfactant may be one in which the component is nonionic. As a nonionic surfactant, at least one type selected from polyoxyalkylene alkyl ether, polyoxyalkylene alkylphenyl ether, polyoxyalkylene alkyl fatty acid ester, polyoxyalkylene arylphenyl ether, polyoxyalkylene sorbitan fatty acid ester, sorbitan fatty acid ester, and polyoxyalkylene may be used.

[0067] When water is further included in the above cleaning solution, the first compositional material may be 50 wt% or more, preferably 60 to 95 wt%, more preferably 70 to 80 wt%, and the second compositional material may be 1 to less than 50 wt%, preferably 5 to 40 wt%, more preferably 20 to 30 wt%, with water making up the remainder.

[0068] Here, it was confirmed through experiments that when the first compositional material is less than 50 wt%, the cleaning performance is reduced, and when the second compositional material is less than 1 wt% or 50 wt% or more, there is a problem with reduced compatibility of the cleaning solution or reduced cleaning performance.

[0069] In addition, when the surfactant, which is the third compositional material, is further included, it is preferable that the third compositional material be mixed in an amount of less than 1 part by weight per 100 parts by weight of the mixed cleaning solution of the first compositional material, the second compositional material, and water. It was confirmed through experiments that when the surfactant, which is the third compositional material, is mixed in an amount of 1 part by weight or more, there is a problem with reduced cleaning performance.

[0070] This third compositional material, a surfactant, may be included in a cleaning composition that does not contain water, and in this case, it is preferable to mix it in an amount of less than 1 part by weight per 100 parts by weight of the first compositional material and the second compositional material.

[0071] In the cleaning step (S100) of the cleaning component above, the processing time (immersion time of the cleaning component) is preferably 1 hour or more, preferably 2 hours to 6 hours, and the processing temperature is preferably room temperature (or 20℃ or higher) to 50℃ or lower.

[0072] If the above processing temperature is below 20℃, there is a problem that the cleaning power decreases and the processing time is long, and if it exceeds 50℃, the solvent evaporates easily, the combination of cleaning components changes, and consequently, there is a problem that the cleaning power decreases.

[0073] Furthermore, the cleaning method of the present invention may further include stirring the cleaning tank itself or the cleaning liquid using a stirring device to increase the cleaning reactivity in the cleaning component cleaning step (S100), supplying microbubbles (preferably nitrogen (N2) bubbles) through a bubble supply device, and / or ultrasonically vibrating the cleaning liquid using an ultrasonic vibration device.

[0074] Next, the cleaning component post-processing step (S200) is a process of removing the cleaning component, for which the cleaning component cleaning step (S100) has been completed, from the cleaning tank and performing post-processing such as additional cleaning or drying.

[0075] For example, the cleaning component post-treatment step (S200) may be performed by rinsing the cleaning component removed from the cleaning tank, preferably by rinsing with ultrapure water (DIW Rinse), and completing the cleaning process by oven drying or air blowing the cleaning component, preferably by clean dry air blowing.

[0076] Additionally, the post-processing step (S200) of the cleaning component may include a process of rubbing the cleaning component using an abrasive composition, and the rinsing and clean dry air and / or rubbing may be performed one or more times in combination of an optional sequence and whether to repeat.

[0077] Since the above rinsing, air cleaning, and rinsing may employ well-known methods in the relevant technical field, a detailed description thereof is omitted.

[0078] Meanwhile, the inventor of the present invention confirmed the cleaning results of the cleaning composition according to the present invention and the cleaning method using the same through experiments.

[0079] FIG. 3 is a diagram showing the process of removing (decomposing) contaminants by the cleaning composition according to the present invention, FIG. 4 is a diagram schematically showing the mechanism of removing contaminants by the cleaning composition according to the present invention, and FIG. 5 is a table showing the cleaning results by the cleaning composition according to the present invention. The types of solvents used in FIG. 5 are DMSO (Dimethyl Sulfoxide), DMPA (Dimethylpropion amide), GBL (gamma Butyrolactone), and BDG (Butyl diglycol).

[0080] - Experimental Method

[0081] A mixed cleaning solution was prepared by mixing a ketone organic solvent and a polar aprotic solvent in the ratio shown in Fig. 5 and stirring at room temperature for 30 minutes.

[0082] Cleaning evaluation was conducted using the prepared cleaning solution in the following manner. The object to be cleaned used was a contaminated semiconductor etching chamber that had undergone repeated processes, and the evaluation was performed by collecting the contaminants from it.

[0083] (1) Evaluation of contaminant cleaning power

[0084] A certain amount of the contaminant collected as described above was weighed using a scale, placed in a cleaning solution, and immersed at room temperature for 6 hours.

[0085] After a period of time, the sample was filtered, washed with pure water (DIW), dried in a 60°C oven for 12 hours, weighed, and its appearance observed. The cleaning power of the solution was evaluated by assessing the weight loss and changes in appearance (◎: Excellent cleaning power, ○: Good cleaning power, △: Insufficient cleaning power, ×: Poor cleaning power).

[0086] (2) Evaluation of base material damage

[0087] An anodized aluminum specimen (2cm × 2cm) was prepared and immersed in a cleaning solution at room temperature for 1 hour, after which the change in surface color and weight was measured to evaluate the degree of damage to the base material (○: no damage, △: slight damage, ×: significant damage).

[0088] The inventor of the present invention confirmed through experiments, as shown in Fig. 5, that contaminants generated during the process on components (e.g., liners) within an etching process chamber can be effectively removed in a relatively short time compared to conventional cleaning methods by using the cleaning composition (cleaning liquid) of the present invention.

[0089] According to the cleaning composition for semiconductor dry etching process components and the cleaning method for semiconductor dry etching process components using the same as described above, there is an advantage in that contaminants including organic and inorganic modified contaminants, particularly modified organic contaminants, can be effectively removed with high cleaning power without damaging the base material of components such as liners used in semiconductor dry etching process equipment.

[0090] In addition, the present invention has the advantage of improving economic efficiency by reliably removing contaminants while enabling removal in a short time compared to conventional cleaning methods.

[0091] The embodiments described in this specification and the accompanying drawings are merely illustrative of a part of the technical concept included in the present invention. Accordingly, since the embodiments disclosed in this specification are intended to explain, not limit, the technical concept of the present invention, it is obvious that the scope of the technical concept of the present invention is not limited by these embodiments. All variations and specific embodiments that can be easily deduced by a person skilled in the art within the scope of the technical concept included in the specification and drawings of the present invention should be interpreted as being included within the scope of the rights of the present invention. Explanation of the symbols

[0092] S100: Cleaning component cleaning step S200: Post-processing step for cleaning components

Claims

Claim 1 delete Claim 2 A cleaning composition for semiconductor dry etching process components for cleaning contaminants of organic or inorganic compounds modified by etching gases of Cl, O2, and CF4 in components of semiconductor dry etching process equipment, wherein the contaminants are fluorine-modified organic compounds or polymers, chlorine-modified organic compounds or polymers, or Si-based inorganic compounds, comprising: a first compositional material of the ketone class; a second compositional material of an organic solvent; and at least one of water and a surfactant;The first compositional material comprises a combination of one or more selected from acetone, methylethylketone, diethyl ketone, methylisopropyl methyl ketone, butyl methyl ketone, methylisobutylmethyl ketone, methylamine ketone, cyclopentanone, cyclohexanone, and cycloheptanone, and the second compositional material comprises N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, dimethyl sulfoxide, and dimethylacetamide. A cleaning composition for a semiconductor dry etching process component, characterized in that it comprises a combination of one or more selected from dimethylformamide, tetramethylene sulfone, gamma-butyrolactone, dimethylpropanamide, acetone, and butyrolactone; where the cleaning composition further comprises only water, the first compositional substance is composed of a mixing ratio in which water is the remainder and the first compositional substance is 50 wt% or more; where the cleaning composition further comprises only a surfactant, the surfactant is composed of a mixing ratio in which the surfactant is less than 1 part by weight per 100 parts by weight of the first compositional substance; and where the cleaning composition comprises both water and a surfactant, the surfactant is mixed in an amount of less than 1 part by weight per 100 parts by weight of the mixture of the first compositional substance and water. Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 A cleaning method for semiconductor dry etching process components for cleaning contaminants of organic or inorganic compounds modified by etching gases of Cl, O2, and CF4 in components of semiconductor dry etching process equipment, wherein the contaminants are fluorine-modified organic compounds or polymers, chlorine-modified organic compounds or polymers, or Si-based inorganic compounds, comprising: a cleaning component cleaning step of immersing the cleaning component in a cleaning tank containing a cleaning solution comprising a first compositional material of the ketone class, a second compositional material of an organic solvent, and at least one of water and a surfactant; A cleaning method for a semiconductor dry etching process component comprising: a cleaning component post-treatment step including a drying treatment of the cleaning component after cleaning is completed; wherein, when only water is included among the water and surfactant, the first compositional material is 50 wt% or more, the second compositional material is 1 to less than 50 wt%, and the remainder is water, in a mixing ratio; when only the surfactant is included among the water and surfactant, the surfactant is less than 1 part by weight per 100 parts by weight of the first compositional material, in a mixing ratio; and when the cleaning composition includes both water and surfactant, the surfactant is mixed in an amount less than 1 part by weight per 100 parts by weight of the mixture of the first compositional material and water. Claim 11 delete Claim 12 A cleaning method for semiconductor dry etching process components according to claim 10, characterized in that the cleaning step of the cleaning component is performed at room temperature for a period of 1 hour or more and 8 hours or less.

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