Optoelectronic component, and method for manufacturing an optoelectronic component
Patent Information
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- AMS OSRAM INT GMBH
- Filing Date
- 2023-01-26
- Publication Date
- 2026-08-03
Smart Images
Figure R1020247025339_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to a photoelectronic component and a method for manufacturing a photoelectronic component. Background Technology
[0002] Optoelectronic components exist in various variations and designs. Optoelectronic components in which reflective potting is arranged around the emission surface are known. Optoelectronic components equipped with projection optics units are also known.
[0003] One object of the present invention is to provide an optoelectronic component. A further object of the present invention is to specify a method for manufacturing an optoelectronic component. These objects are achieved by an optoelectronic component and a method for manufacturing an optoelectronic component comprising the features of the independent claims. Various developments are specified in the dependent claims.
[0004] The optoelectronic component comprises an optoelectronic semiconductor chip including emission surfaces arranged on an upper surface, and the emission surfaces are provided to emit light into an emission space. The emission surfaces are laterally defined by a cover comprising a first section defining the emission surfaces in a ring shape and a second section. The cover is configured such that light incident on the second section of the cover from outside the optoelectronic component is primarily reflected. Light emitted by the emission surfaces in the direction of the cover is primarily deflected by the cover and is not specularly reflected into the emission space.
[0005] In the case of such optoelectronic components, the fact that light incident on the second section of the cover from outside the optoelectronic component is mainly reflected favorably reduces the risk that light incident from the outside will cause material degradation, for example, as a result of thermal effects. In this case, the light incident from the outside may be, for example, sunlight. The fact that the cover is configured such that light emitted by the emission surface toward the cover is mainly deflected by the cover and not specularly reflected into the emission space favorably reduces the risk of unwanted scattered light entering the emission space. These two functions of the cover are realized in the case of such optoelectronic components thanks to a cover comprising two sections.
[0006] In one embodiment of the optoelectronic component, the optoelectronic component comprises a projection optics unit arranged above an emission surface, so that light emitted into the emission space enters the projection optics unit. The projection optics unit may be provided, for example, to project light emitted by the emission surface into a target space. Advantageously, in the case of such an optoelectronic component, light emitted by the emission surface toward the cover is not projected into the projection optics unit or is only partially projected, and thus is not undesirably projected into the target space.
[0007] In one embodiment of the optoelectronic component, the emission surface covers a portion of the upper surface of the optoelectronic semiconductor chip. In this case, a first section of the cover is arranged at least sectionally on the upper surface of the optoelectronic semiconductor chip. In this way, the cover can advantageously surround the emission surface of the optoelectronic semiconductor chip.
[0008] In one embodiment of the optoelectronic component, light emitted by the emission surface toward the cover is guided through the optoelectronic semiconductor chip at least partially toward the emission space. Advantageously, this particularly effectively prevents the light from undesirably entering the emission space and possibly into a projection optical unit that may be arranged therein.
[0009] In one embodiment of the optoelectronic component, the second section is radially outwardly adjacent to the first section. Consequently, it is advantageously achieved that the corresponding portion of the cover facing the emission surface is formed by the first section, while the second section of the cover forms a portion of the cover facing the emission space.
[0010] In one embodiment of the optoelectronic component, the second section includes a contact area adjacent to the first section. In this case, light emitted by the emission surface in the direction of the cover is at least partially reflected in the contact area. The contact area can advantageously be configured and oriented so that the light reflected in the contact area is not primarily specularly reflected into the emission space.
[0011] In one embodiment of the optoelectronic component, the contact area includes a concave shape. This can be achieved in a simple manner thanks to the fact that a portion of the first section of the cover facing the second section includes a convex shape. The concave shape of the contact area advantageously allows light emitted by the emission surface to be collected in the direction of the cover, thereby preventing specular reflection into the emission space.
[0012] In one embodiment of the optoelectronic component, the contact area is oriented toward the upper surface of the optoelectronic semiconductor chip. This advantageously prevents light emitted by the emission surface toward the cover and reflected from the contact area from being specularly reflected into the emission space.
[0013] In one embodiment of the optoelectronic component, the first section and the second section have different optical properties, in particular different transparency and / or different reflectance. This advantageously enables the cover of the optoelectronic component to perform a plurality of different functions simultaneously.
[0014] In one embodiment of the optoelectronic component, the first section and the second section comprise different materials. Advantageously, it is particularly easy to construct the first section and the second section having different optical properties as a result.
[0015] In one embodiment of the optoelectronic component, the second section contains a higher proportion of light-scattering particles than the first section. Consequently, it can advantageously be achieved that the second section has a higher reflectance than the first section of the cover.
[0016] In one embodiment of the optoelectronic component, the first section comprises a material having at least 30% transmittance when given a reference thickness of 100 μm. In this case, the first section advantageously has sufficient transmittance to achieve an effect in which light emitted by the emission surface in the direction of the cover is mainly reflected from the first section of the cover.
[0017] In one embodiment of the optoelectronic component, the surface of the first section not covered by the second section comprises microstructuring. For example, the microstructuring may be roughening. Advantageously, such microstructuring achieves the effect of light emitted by the emission surface in the direction of the cover being diffusely scattered on the microstructured surface.
[0018] In one embodiment of the optoelectronic component, the second section includes a first partial region and a second partial region. In this case, the first partial region and the second partial region have different optical properties. This advantageously makes it possible to further optimize the optical function of the cover for a desired application.
[0019] In one embodiment of the optoelectronic component, a first partial region is arranged between the first section and the second partial region. In this case, the first partial region exhibits greater absorption than the second partial region. Advantageously, the first partial region of the second section of the cover can thus act as a light trap for light emitted toward the cover by the emitting surface.
[0020] In one embodiment of the optoelectronic component, a second partial region covers at least partially a first partial region. In this case, the second partial region has a higher reflectivity than the first partial region. Advantageously, the second partial region of the second section can thereby cause particularly effective reflection of light incident on the second section of the cover from outside the optoelectronic component.
[0021] In one embodiment of the optoelectronic component, the emission surface is composed of an LED matrix. Advantageously, the optoelectronic component can accordingly serve as an adaptive light source, for example, an adaptive headlight or adaptive lighting for sensor system applications.
[0022] A method for manufacturing an optoelectronic component comprises the steps of: arranging optoelectronic semiconductor chips including emission surfaces arranged on an upper surface so that light can be emitted by the emission surfaces into an emission space; creating a first section of a cover—the first section defining the emission surfaces in a ring shape—; and creating a second section of a cover. In this case, the first section and the second section are created in separate processes. The cover is configured such that light incident on the second section of the cover from outside the optoelectronic component is primarily reflected. At the same time, the cover is configured such that light emitted by the emission surfaces toward the cover is primarily deflected by the cover and is not specularly reflected into the emission space.
[0023] Advantageously, an optoelectronic component in which the cover performs two functions can be obtained by this manufacturing method. Light incident on the second section of the cover from outside the optoelectronic component, such as sunlight, is primarily reflected, which reduces the risk of material degradation of the optoelectronic component. Light emitted by the emission surface toward the cover is primarily deflected by the cover and is not specularly reflected into the emission space. Consequently, unwanted light reflections in the emission space are advantageously suppressed.
[0024] In one embodiment of the method, the first section is composed of a dam. Then, the second section is composed of a potting extending to the dam. This advantageously enables simple and cost-effective manufacturing of a cover for an optoelectronic component.
[0025] In one embodiment of the method, the first section is constructed by a dosing method. This advantageously enables a simple and cost-effective construction of the first section of the cover. Brief explanation of the drawing
[0026] The foregoing characteristics, features, and advantages of the present invention, and the manner in which they are achieved, will become clearer or more clearly understood in connection with the following description of exemplary embodiments described in more detail in relation to the drawings, and in schematic examples: Figure 1 shows a side cross-sectional view of an optoelectronic component. Figure 2 shows a plan view of a part of a photoelectronic component in an unfinished processing state. Figure 3 shows a plan view of a part of the photoelectronic component in a subsequent processing state. FIG. 4 shows a side cross-sectional view of the first deformation of the cover of the optoelectronic component. Figure 5 illustrates an additional variation of the cover. Figure 6 illustrates an additional variation of the cover. Figure 7 illustrates an additional variation of the cover. Figure 8 illustrates an additional variation of the cover. Fig. 9 illustrates an additional variation of the cover. Figure 10 illustrates an additional variation of the cover. Fig. 11 illustrates an additional variation of the cover. Fig. 12 illustrates an additional variation of the cover. Figure 13 illustrates an additional variation of the cover of the optoelectronic component. Specific details for implementing the invention
[0027] FIG. 1 illustrates a schematic side cross-sectional view of a portion of a photoelectronic component (10). The photoelectronic component (10) is provided to emit light into a target space. The photoelectronic component (10) may be, for example, part of a car headlight or may serve as a lighting device for a sensor system application.
[0028] The optoelectronic component (10) includes a carrier (200) including an upper surface (201). The carrier (200) may be composed of, for example, a printed circuit board including metallization (210) arranged on the upper surface (201).
[0029] An optoelectronic semiconductor chip (100) is arranged on the upper surface (201) of a carrier (200). The optoelectronic semiconductor chip (100) includes an upper surface (101) and a lower surface (102) facing the upper surface (101). The lower surface (102) faces the upper surface (201) of the carrier (200).
[0030] An emission surface (110) is arranged on the upper surface (101) of a photoelectronic semiconductor chip (100). The emission surface (110) is provided to emit light (103) into an emission space (300) above the upper surface (101) of the emission surface (110).
[0031] The emission surface (110) may be configured on a sequence of light-emitting semiconductor layers, for example, an LED layer sequence, arranged on the upper surface (101) of the optoelectronic semiconductor chip (100). In this case, the emission surface (110) may be subdivided into individually controllable light-emitting regions (pixels) arranged, for example, in a matrix form. In this case, the optoelectronic semiconductor chip (100) may be composed of, for example, a silicon chip and may serve to control the sequence of light-emitting layers.
[0032] However, for example, the optoelectronic semiconductor chip (100) itself can also be composed of a light-emitting semiconductor chip, for example, an LED chip.
[0033] The emission surface (110) may also be formed by a wavelength conversion layer. In this case, the wavelength conversion layer may be arranged on a sequence of light-emitting semiconductor layers that are eventually arranged on the upper surface (101) of the optoelectronic semiconductor chip (100). Alternatively, the wavelength conversion layer may be arranged on the optoelectronic semiconductor chip (100) itself, which is composed of light-emitting semiconductor chips. The wavelength conversion layer may be provided to convert light generated by the sequence of light-emitting semiconductor layers or the optoelectronic semiconductor chip into light of at least partially different wavelengths. For example, the wavelength conversion layer may be provided to generate white mixed light.
[0034] In the example illustrated in FIG. 1, the optoelectronic component (10) additionally includes a projection optical unit (350), which is arranged over the emission surface (110) in the emission space (300) so that light (130) emitted into the emission space (300) by the emission surface (110) enters the projection optical unit (350). The projection optical unit (350) is provided to project the light emitted into the emission space (300) by the emission surface (110) onto a target space. If the optoelectronic component (10) is part of a car headlight, the projection optical unit (350) may serve to direct the light (130) emitted by the emission surface (110), for example, onto the road. In one simplified variation of the optoelectronic component (10), the projection optical unit (350) may be omitted.
[0035] The optoelectronic component (10) further includes a cover (400) that laterally defines the emission surface (110). The cover (400) includes a first section (500) and a second section (600) that define the emission surface (110) in a ring shape. In the example illustrated in FIG. 1, the second section (600) is radially outwardly adjacent to the first section (500).
[0036] The cover (400) is provided to primarily reflect light (140) incident on the second section (600) of the cover (400) from outside the optoelectronic component (10). The light (140) incident from outside the optoelectronic component (10) may be, for example, sunlight entering the internal region of the optoelectronic component (10) through a projection optical unit (350). In this case, under certain circumstances, the projection optical unit (350) may cause the light (140) incident from the outside to be focused on a narrow area. The largest possible portion of this light (140) needs to be reflected from the second section (600) of the cover (400) to prevent excessive heating of the component parts of the optoelectronic component (10) and possibly incidental damage or deterioration. Then, the light (140) reflected from the second section (600) of the cover (400) can come out of the photoelectronic component (10) again or enter into less sensitive areas of the photoelectronic component (10).
[0037] The cover (400) additionally has the task of primarily deflecting the light (120) emitted by the emission surface (110) in the direction of the cover (400) so that it is not specularly reflected into the emission space (300). The radiation emitted by the emission surface (110) is primarily emitted within an angular range around a direction oriented perpendicularly to the emission surface (110), and thus can enter directly into the projection optical device unit (350) as light (130) emitted into the emission space (300). However, some of the radiation emitted by the emission surface (110) may be emitted laterally by incidenting on the cover (400) which limits the emission surface (110) laterally. If the light (120) emitted in the direction of the cover (400) is reflected from the cover (400) in such a way that it subsequently enters the emission space (300) and the projection optical unit (350), it will be undesirably projected into the target space by the projection optical unit (350). This problem will be particularly severe if the light (120) emitted in the direction of the cover (400) is reflected specularly from the cover (400), because bright scattered light reflections may be generated in the target space accordingly.
[0038] The cover (400) of the optoelectronic component (10) may be manufactured by a first section (500) of the cover (400)—which defines the emission surface (110) in a ring shape—and a second section (600) that are produced sequentially in separate processes. FIG. 2 illustrates a perspective plan view of a portion of the optoelectronic component (10) in an unfinished processing state during the manufacture of the optoelectronic component (10). The projection optical device unit (350) is not illustrated in the example of FIG. 2. Instead, FIG. 2 also schematically illustrates a portion of the housing (220) of the optoelectronic component (10), said housing is not illustrated in FIG. 1. The housing (220) accommodates the carrier (200) and also covers a portion of the upper surface (201) of the carrier (200). The optoelectronic semiconductor chip (100) is exposed in a recess of the housing (220).
[0039] In a processing step that precedes the processing state illustrated in FIG. 2 in time, a first section (500) of the cover (400) is created, and said first section defines the emission surface (110) in a ring shape. In this case, the first section (500) is arranged on the upper surface (101) of the optoelectronic semiconductor chip (100). However, it may also be possible to partially or completely arrange the first section (500) of the cover (400) next to the optoelectronic semiconductor chip (100). The first section (500) may be formed, for example, by a dosing method (dispensing).
[0040] FIG. 3 illustrates a schematic perspective plan view of a portion of the optoelectronic component (10) in a processing state that is temporally subsequent to the example of FIG. 2. A second section (600) of the cover (400) is created to be radially outwardly adjacent to the first section (500). In the example illustrated in FIG. 3, the second section (600) extends to the edge of the recess of the housing (220) and thus covers the entire portion of the upper surface (201) of the carrier (200) that was previously still exposed. The portions of the upper surface (101) of the optoelectronic semiconductor chip (100) that are radially outside the first section (500) of the cover (400) are also covered by the second section (600) of the cover (400). The cover (400) surrounds the still exposed emission surface (110) of the optoelectronic semiconductor chip (100) in a ring shape.
[0041] The second section (600) of the cover (400) may be formed, for example, by a potting method (casting). In this case, the previously created first section (500) of the cover (400) may have served as a dam.
[0042] FIG. 4 illustrates a schematic side cross-sectional view of a portion of a photoelectronic component (10). This example illustrates a portion of a photoelectronic semiconductor chip (100) including an emission surface (110) arranged on an upper surface (101), and a portion of a cover (400) including a first section (500) and a second section (600).
[0043] A first section (500) of the cover (400) is fully aligned on the upper surface (101) of the optoelectronic semiconductor chip (100) to define the emission surface (110). A second section (600) is radially adjacent to the first section (500). The second section (600) is locally aligned on the upper surface (101) of the optoelectronic semiconductor chip (100), but extends laterally beyond the optoelectronic semiconductor chip (100) and is aligned on the upper surface (201) of the carrier (200), which is not illustrated in FIG. 4.
[0044] In the example illustrated in FIG. 4, the first section (500) includes a cross section (530) having the approximate shape of a half a circular disk. Accordingly, the surface of the first section (500) facing the upper surface (101) of the optoelectronic semiconductor chip (100) is curved in an approximate semicircular shape at the cross section (530). The surface is subdivided into a surface (510) not covered by the second section (600) and a surface (520) covered by the second section (600).
[0045] In the example illustrated in FIG. 4, the second section (600) of the cover (400) extends to the apex of the first section (500) in a direction perpendicular to the upper surface (101) of the optoelectronic semiconductor chip (100). Thus, the first section (500) and the second section (600) of the cover (400) have approximately the same thickness in a direction perpendicular to the upper surface (101) of the optoelectronic semiconductor chip (100). As a result, the uncovered surface (510) and the covered surface (520) of the first section (500) within the cross section (530) have approximately the same size. The uncovered surface (510) of the first section (500) is oriented in the direction of the emission surface (110) of the optoelectronic semiconductor chip (100).
[0046] The second section (600) of the cover (400) includes a contact area (630) adjacent to the covered surface (520) of the first section (500). Since the covered surface (520) of the first section (500) is convexly curved, the contact area (630) of the second section (600) has a concave shape. Thus, the contact area (630) forms a concave mirror. The contact area (630) is oriented toward the upper surface (101) of the optoelectronic semiconductor chip (100). This means that the normal vector at all parts of the contact area (630) of the second section (600) is oriented toward the upper surface (101) of the optoelectronic semiconductor chip (100) or is parallel to the upper surface (101) of the optoelectronic semiconductor chip (100).
[0047] The first section (500) and the second section (600) of the cover (400) have different optical properties. This can be achieved, for example, thanks to the first section (500) and the second section (600) having different materials. Additionally, the first section (500) and the second section (600) may have the same matrix materials containing fillers of different proportions.
[0048] In one example, the first section (500) has a higher transparency than the second section (600). The second section (600) has a higher reflectance than the first section (500). To this end, the second section (600) may include, for example, a higher proportion of light-scattering particles than the first section (500). When high-reflection white filler particles are used, the first section (500) may include, for example, a concentration of said filler particles of 0 wt% to 10 wt%. When less reflective filler particles are used, the first section (500) may include a concentration of said filler particles of 0 wt% to 30 wt%. Then, the second section (600) of the cover (400) may include a higher concentration of filler particles in each case. It is convenient for the first section (500) of the cover (400) to include a material having at least 30% transmittance when given a reference thickness of 100 μm.
[0049] Light (120) emitted in the direction of the cover (400) by the emission surface (110) of the optoelectronic semiconductor chip (100) enters at least partially into the first section (500) of the cover (400) and is at least partially reflected at the contact area (630) of the second section (600) of the cover (400). Due to the concave shape of the contact area (630), which is oriented toward the upper surface (101) of the optoelectronic semiconductor chip (100), the light reflected from the contact area (630) is incident back on the emission surface (110) or passes over the emission surface (110) at a shallow angle. This prevents the light (120) emitted by the emission surface (110) in the direction of the cover (400) from being specularly reflected into the emission space (300).
[0050] Light (140) incident on the second section (600) of the cover (400) from outside the optoelectronic component (10) is primarily reflected from the outer surface (640) of the second section (600), which has a high reflectivity. The outer surface (640) is oriented approximately parallel to the upper surface (101) of the optoelectronic semiconductor chip (100), so that the light reflected from the outer surface (640) substantially leaves the optoelectronic component (10) or enters into the insensitive regions of the optoelectronic component (10).
[0051] In an alternative example, the first section (500) of the cover (400) is configured to be primarily absorbent. In this example as well, the second section (600) has a high reflectivity, particularly a reflectivity higher than that of the first section (500). In this exemplary configuration, light (120) emitted toward the cover (400) by the emission surface (110) of the optoelectronic semiconductor chip (100) is at least partially absorbed in the first section (500) of the cover (400). The remaining light enters at least partially into the first section (500) of the cover (400) and is at least partially reflected at the contact area (630) of the second section (600) of the cover (400) in the manner already described. This also prevents the light (120) emitted by the emission surface (110) toward the cover (400) from being specularly reflected into the emission space (300).
[0052] FIG. 5 illustrates a schematic side cross-sectional view of a portion of an alternative variation of the optoelectronic component (10). In the variation shown in FIG. 5, the first section (500) of the cover (400) is widened radially compared to the variation shown in FIG. 4, and accordingly, the first section (500) protrudes laterally beyond the upper surface (101) of the optoelectronic semiconductor chip (100). Thus, the first section (500) of the cover (400) is locally arranged on the upper surface (101) of the optoelectronic semiconductor chip (100) and locally arranged on the upper surface (201) of the carrier (200), which is not shown in FIG. 5. Additionally, it would be possible to arrange the first section (500) completely outside the optoelectronic semiconductor chip (100) on the upper surface (201) of the carrier (200). In the case of the variation illustrated in FIG. 5, light (120) emitted by the emission surface (110) toward the cover (400) and reflected from the contact area (630) of the second section (600) of the cover (400) may come out from the first section (500) of the cover (400) at least partially in the opposite direction to the emission space (300), and as a result, is guided at least partially through the optoelectronic semiconductor chip (100). The light guided through the optoelectronic semiconductor chip (100) in the opposite direction to the emission space (300) may, for example, enter into a light trap or be reflected or absorbed on the upper surface (201) of the carrier (200). In any case, this prevents the light (120) emitted by the emission surface (110) toward the cover (400) from being specularly reflected into the emission space (300).
[0053] FIG. 6 illustrates a schematic side cross-sectional view of a portion of an alternative variation of the optoelectronic component (10). In the variation illustrated in FIG. 6, the second section (600) extends over a larger portion of the surface of the first section (500) than in the variation illustrated in FIG. 5. Accordingly, the second section (600) has a thickness somewhat greater than that of the first section (500) in the direction measured perpendicular to the upper surface (101) of the optoelectronic semiconductor chip (100). In the variation illustrated in FIG. 6, the uncovered surface (510) of the first section (500) is smaller than the covered surface (520) and smaller than in the variation illustrated in FIG. 5. As a result, light (140) incident from outside the optoelectronic component (10) is achieved to be mainly reflected from the corresponding portion of the second section (600) of the cover (400) arranged over the surface of the first section (500).
[0054] The second section (600) of the cover (400) of the variation of the optoelectronic component (10) shown in FIG. 6 can also be configured in a bipartite manner, as also described below with reference to FIG. 11.
[0055] FIG. 7 illustrates a schematic side cross-sectional view of a portion of an additional variation of the optoelectronic component (10). The variation illustrated in FIG. 7 differs from the variation illustrated in FIG. 4 in that the cross-section (530) of the first section (500) of the cover (400) does not include the shape of a semicircular disk. Instead, in the variation illustrated in FIG. 7, the cross-section (530) includes the shape of approximately one-quarter of a circular disk. As a result, the surface (510) facing the emission surface (110) of the optoelectronic semiconductor chip (100) and not covered by the second section (600) is flat and oriented approximately perpendicularly to the upper surface (101) of the optoelectronic semiconductor chip (100). In the variation illustrated in FIG. 7, the shape of the surface (520) of the first section (500) covered by the second section (600) and the shape of the contact area (630) of the second section (600) correspond to the variation of FIG. 4.
[0056] FIG. 8 illustrates a schematic side cross-sectional view of a portion of an additional variation of the optoelectronic component (10). The variation illustrated in FIG. 8 differs from the variation illustrated in FIG. 4 in that the cross-section (530) of the first section (500) of the cover (400) includes an approximate triangular shape. Consequently, with respect to the first section (500), the surface (510) not covered by the second section (600) and the surface (520) covered by the second section (600) are both configured in a planar manner and are inclined with respect to an orientation perpendicular to the upper surface (101) of the optoelectronic semiconductor chip (100). Accordingly, the contact area (630) of the second section (600) of the cover (400) is also configured in a planar manner. Nevertheless, the contact area (630) of the second section (600) is oriented toward the upper surface (101) of the optoelectronic semiconductor chip (100), even in the variation illustrated in FIG. 8.
[0057] FIG. 9 illustrates a schematic side cross-sectional view of part of an additional variation of the optoelectronic component (10). In the variation illustrated in FIG. 9, the cross-section (530) of the first section (500) of the cover (400) has an approximate rectangular shape. Furthermore, in this variation, in a manner similar to the variation of FIG. 6, the second section (600) of the cover (400) extends partially over the first section (500), so that the second section (600) has a greater thickness than the first section (500) in a direction perpendicular to the upper surface (101) of the optoelectronic semiconductor chip (100).
[0058] FIG. 10 illustrates a schematic side cross-sectional view of a portion of an additional variation of the optoelectronic component (10). In the variation illustrated in FIG. 10, the cover (400) includes a shape similar to that of the variation illustrated in FIG. 6. However, the second section (600) of the cover (400) is subdivided into a first partial region (610) and a second partial region (620). The first partial region (610) is arranged between the first section (500) of the cover (400) and the second partial region (620). Thus, the first partial region (610) of the second section (600) forms a contact area (630) that contacts the first section (500). The second partial region (620) of the second section (600) forms the outer surface (640) of the second section (600) of the cover (400).
[0059] The first partial region (610) and the second partial region (620) of the second section (600) have different optical properties. The first partial region (610) exhibits greater absorption than the second partial region (620). The optical properties of the second partial region (620) of the second section (600) may correspond to the optical properties of the second section (600) of the cover (400) described with reference to FIG. 4.
[0060] In the case of a variation of the optoelectronic component (10) illustrated in FIG. 10, light (120) emitted by the emission surface (110) toward the cover (400) is at least partially reflected at the contact area (630). However, some of the light (120) emitted by the emission surface (110) toward the cover (400) may also penetrate into the first partial area (610) of the second section (600) and be absorbed there. Thus, the first partial area (610) of the second section (600) of the cover (400) forms a light trap.
[0061] In contrast, even in the case of the variation illustrated in FIG. 10, light (140) incident on the second section (600) of the cover (400) from the outside of the optoelectronic component (10) is mainly reflected from the outer surface (640) of the second section (600), said outer surface is formed by the second partial region (620) of the second section (600) and does not pass into the first partial region (610) of the second section (600).
[0062] The first partial region (610) and the second partial region (620) of the second section (600) of the cover (400) of the variation of the optoelectronic component (10) shown in FIG. 10 can be manufactured sequentially in two separate processing steps. In this case, first, the first partial region (610) is manufactured. Then, the second partial region (620) is created.
[0063] FIG. 11 illustrates a schematic side cross-sectional view of part of an additional variation of the optoelectronic component (10). The variation illustrated in FIG. 11 differs from the variation of the optoelectronic component (10) described with reference to FIG. 4 in that the second section (600) of the cover (400) is subdivided into a first partial region (610) and a second partial region (620). The second partial region (620) covers at least partially the first partial region (610). In the example illustrated in FIG. 11, the second partial region (620) completely covers the first partial region (610), and accordingly, the outer surface (640) of the second section (600) is formed by the second partial region (620). The first partial area (610) of the second section (600) is in contact with the covered surface (520) of the first section (500), and accordingly, the contact area (630) of the second section (600) is formed by the first partial area (610) of the second section (600).
[0064] The first partial region (610) and the second partial region (620) of the second section (600) have different optical properties. The second partial region (620) has a higher reflectance than the first partial region (610). The second partial region (620) of the second section (600) of the cover (400) of the variation of the optoelectronic component (10) shown in FIG. 11 may have the same material and the same optical properties as the second section (600) of the variation of the optoelectronic component (10) described with reference to FIG. 4, for example. The first partial region (610) of the second section (600) of the cover (400) of the variation shown in FIG. 11 may have a lower reflectance.
[0065] The first partial region (610) and the second partial region (620) of the second section (600) of the cover (400) of the variation of the optoelectronic component (10) shown in FIG. 11 can be manufactured sequentially in two separate processing steps. In this case, first, the first partial region (610) is created. Then, the second partial region (620) is created.
[0066] FIG. 12 illustrates a schematic side cross-sectional view of part of an additional variation of the optoelectronic component (10). The variation of the optoelectronic component (10) shown in FIG. 12 differs from the variation shown in FIG. 4 in that the first section (500) of the cover (400) includes a cross-section (530) that includes a roughly triangular shape. The contact area (630) of the second section (600) is configured substantially in a planar manner and is not oriented toward the upper surface (101) of the optoelectronic semiconductor chip (100), but rather is oriented toward the emission space (300).
[0067] In the case of a variation of the optoelectronic component (10) illustrated in FIG. 12, light (120) emitted in the direction of the cover (400) by the emission surface (110) can penetrate into the first section (500) of the cover (400) and is at least partially reflected at the contact area (630) of the second section (600). In this case, the contact area (630) is oriented so that the light reflected from the contact area (630) does not enter the emission space (300) and, consequently, does not enter the projection optical device unit (350).
[0068] FIG. 13 illustrates a schematic side cross-sectional view of part of an additional variation of the optoelectronic component (10). The variation illustrated in FIG. 13 corresponds to the variation described with reference to FIG. 8. In the case of the variation of FIG. 13, microstructuring (540) is additionally provided on the surface (510) of the first section (500) that is not covered by the second section (600). The microstructuring (540) may be, for example, roughening, particularly statistical roughening. The microstructuring (540) may have the effect of scattering light (120) emitted by the emission surface (110) in the direction of the cover (400) at least partially diffusely by the microstructuring (540). Consequently, the microstructuring (540) prevents the light (120) emitted by the emission surface (110) in the direction of the cover (400) from specularly reflecting into the emission space (300). In the case of additional variations of the optoelectronic component (10) described with reference to FIGS. 4 to 12, a corresponding microstructure (540) may be provided on the surface (510) of the first section (500) of the cover (400) that is not covered by the second section (600).
[0069] List of reference symbols
[0070] 10: Optoelectronic components
[0071] 100: Optoelectronic semiconductor chip
[0072] 101: Top surface
[0073] 102: If
[0074] 110: Emission surface
[0075] 120: Light emitted in the direction of the cover
[0076] 130: Light emitted into the emission space
[0077] 140: Light incident from the outside
[0078] 200: Carrier
[0079] 201: Top surface
[0080] 210: Metallization
[0081] 220: Housing
[0082] 300: Emission space
[0083] 350: Projection Optical Device Unit
[0084] 400: Cover
[0085] 500: Section 1
[0086] 510: Uncovered surface
[0087] 520: Covered surface
[0088] 530: Section
[0089] 540: Microstructuring
[0090] 600: Section 2
[0091] 610: Part 1
[0092] 620: Part 2
[0093] 630: Contact area
[0094] 640: Turning away
Claims
Claim 1 As a photoelectronic component (10), the photoelectronic semiconductor chip (100) comprises an emission surface (110) arranged on an upper surface (101), wherein the emission surface is provided to emit light (130) into an emission space (300), wherein the emission surface (110) is laterally limited by a cover (400), wherein the cover (400) comprises a first section (500) and a second section (600) that limit the emission surface (110) in a ring shape, wherein the second section (600) is radially adjacent to the first section (500), and the second section (600) comprises a contact area (630) adjacent to the first section (500), wherein the cover (400) is configured such that light (140) incident on the second section (600) of the cover (400) from outside the photoelectronic component (10) is mainly reflected, and A photoelectronic component (10), wherein light (120) emitted by the emission surface (110) in the direction of the cover (400) is mainly deflected by the cover (400) and is not specularly reflected into the emission space (300), and light (120) emitted by the emission surface (110) in the direction of the cover (400) is at least partially reflected at the contact area (630), and the contact area (630) includes a concave shape. Claim 2 In claim 1, the optoelectronic component (10) comprises a projection optical device unit (350) arranged on the emission surface (110), so that light (130) emitted into the emission space (300) enters into the projection optical device unit (350). Claim 3 In claim 1, the emission surface (110) covers a portion of the upper surface (101) of the optoelectronic semiconductor chip (100), and the first section (500) of the cover (400) is at least locally arranged on the upper surface (101) of the optoelectronic semiconductor chip (100), the optoelectronic component (10). Claim 4 In claim 1, the light (120) emitted in the direction of the cover (400) by the emission surface (110) passes through the optoelectronic semiconductor chip (100) and is guided at least partially in the opposite direction to the emission space (300), the optoelectronic component (10). Claim 5 In claim 1, the first section (500) and the second section (600) are photoelectronic components (10) having different transparency and / or different reflectance. Claim 6 In claim 1, the contact area (630) is oriented toward the upper surface (101) of the optoelectronic semiconductor chip (100), the optoelectronic component (10). Claim 7 In claim 1, the first section (500) and the second section (600) are optoelectronic components (10) having different optical properties. Claim 8 In claim 7, the first section (500) and the second section (600) comprise different materials, the optoelectronic component (10). Claim 9 In claim 7, the photoelectronic component (10) comprises a higher proportion of light-scattering particles than the first section (500). Claim 10 In claim 1, the first section (500) comprises a material having at least 30% transmittance when given a reference thickness of 100 μm, an optoelectronic component (10). Claim 11 In claim 1, the surface (510) of the first section (500) not covered by the second section (600) comprises a microstructure (540), the photoelectronic component (10). Claim 12 In claim 1, the second section (600) comprises a first partial region (610) and a second partial region (620), and the first partial region (610) and the second partial region (620) comprise different optical properties, the optoelectronic component (10). Claim 13 In paragraph 12, the first partial region (610) is arranged between the first section (500) and the second partial region (620), and the first partial region (610) exhibits greater absorption than the second partial region (620), the photoelectronic component (10). Claim 14 In claim 12, the second partial region (620) covers at least partially the first partial region (610), and the second partial region (620) has a higher reflectance than the first partial region (610), the photoelectronic component (10). Claim 15 In claim 1, the emission surface (110) is a photoelectronic component (10) composed of an LED matrix. Claim 16 A method for manufacturing a photoelectronic component (10), comprising the steps of: arranging a photoelectronic semiconductor chip (100) including an emission surface (110) arranged on an upper surface (101) so that light (130) can be emitted into an emission space (300) by the emission surface (110); creating a first section (500) of a cover (400) - wherein the first section limits the emission surface (110) to a ring shape -; and creating a second section (600) of the cover (400), wherein the first section (500) and the second section (600) are created in separate processes, wherein the second section (600) is radially outwardly adjacent to the first section (500), and the second section (600) includes a contact area (630) adjacent to the first section (500), and wherein the cover (400) is from the outside of the photoelectronic component (10) A method configured such that light (140) incident on the second section (600) of the cover (400) is mainly reflected, and light (120) emitted by the emission surface (110) in the direction of the cover (400) is mainly deflected by the cover (400) and is not specularly reflected into the emission space (300), and light (120) emitted by the emission surface (110) in the direction of the cover (400) is at least partially reflected at the contact area (630), and the contact area (630) includes a concave shape. Claim 17 In paragraph 16, the above-mentioned first section (500) is composed of a dam, and the above-mentioned second section (600) is composed of a potting extending to the dam. Claim 18 In paragraph 16, the above-mentioned first section (500) is configured by a dosing method. Claim 19 delete Claim 20 delete