Electroplating device and electroplating method

Abstract

An electroplating device and an electroplating method. The electroplating device comprises: an electroplating cavity (100), a wafer holding apparatus (200), a stirring mechanism (300), and a drive mechanism (400), wherein the stirring mechanism (300) is arranged in the electroplating cavity (100), and when the wafer holding apparatus (200) holds a wafer, the stirring mechanism (300) is parallel to the wafer; the drive mechanism (400) is configured to drive the stirring mechanism (300) to perform continuous main-period reciprocating motions parallel to the wafer, such that the stirring mechanism (300) stirs an electroplating solution; each main-period reciprocating motion comprises N continuous sub-period reciprocating motions, N being an integer greater than or equal to 2; and within the same main period, the end-point position of the previous sub-period is the start-point position of the following adjacent sub-period, and the sub-stroke within the same sub-period is a real number greater than 0, the sub-stroke being the distance between the end-point position and the start-point position within the same sub-period. By means of regulating and controlling the motion mode of a stirring mechanism, the present invention achieves the effect of uniform electroplating while improving the electroplating efficiency.

Description

Electroplating equipment and electroplating methods Technical Field

[0001] This invention belongs to the field of semiconductor electroplating technology, and specifically relates to electroplating equipment and electroplating methods. Background Technology

[0002] In the post-Moore's Law era, advanced packaging technologies for chip integration are playing an increasingly important role. Among these, 3D stacking technology, regional silicon interconnect technology, and embedded multi-chip interconnect bridging technology all have a demand for high aspect ratio via filling electroplating. Currently, high aspect ratio via filling processes face several recognized significant challenges: the plating solution is difficult to fully immerse into the deep holes. If the plating solution does not fully penetrate the deep holes, plating defects such as incomplete plating and voids will occur during the plating process, reducing the yield of the plated products. Furthermore, as the aspect ratio increases, the proportion of diffusion-controlled areas within the plated holes also increases, which reduces plating efficiency and quality. To address these issues, strengthening the plating solution agitation is one solution. This can be achieved by incorporating a stirring mechanism into the plating equipment. This stirring mechanism can oscillate horizontally or vertically within the plating solution. The oscillation direction of the stirring mechanism depends on the electroplating mode of the electroplating machine. When the electroplating mode is horizontal electroplating, the stirring mechanism oscillates horizontally in the electroplating solution; when the electroplating mode is vertical rack plating, the stirring mechanism oscillates vertically in the electroplating solution. The oscillating stirring mechanism in the electroplating solution enhances the mass transfer of the electroplating solution and increases the relative velocity between the electroplating solution and the surface of the workpiece. The stirring paddle, as an example of a stirring mechanism, has multiple parallel blades with a certain gap between adjacent blades. When the stirring paddle moves, it generates liquid vortices. These liquid vortices generate a high-speed stirring flow on the lower surface (face down) of the wafer, thereby enhancing mass transfer. To further enhance the mass transfer of the electroplating solution, the usual approach is to simply increase the speed of the paddle reciprocating motion. However, the high-speed reciprocating motion of the agitator can lead to significant differences in the flow rate of the electroplating solution in different areas of the electroplating chamber, which in turn results in significant differences in the flow rate of the electroplating solution in different areas of the workpiece, and thus significant differences in the mass transfer between the areas. This can cause uneven electroplating and reduce the quality of the electroplating.

[0003] Summary of the Invention

[0004] To avoid uneven electroplating caused by simply increasing the speed of the paddle reciprocating motion, which leads to large differences in the flow velocity of the electroplating solution in different parts of the electroplating chamber, this invention improves electroplating efficiency and enhances the ability of the electroplating solution to penetrate deep holes by adjusting the motion mode of the stirring mechanism, thereby achieving a uniform electroplating effect.

[0005] In a first aspect, this application proposes an electroplating apparatus, comprising: an electroplating chamber, a wafer holding device, a stirring mechanism, and a driving mechanism; wherein, the electroplating chamber is used to contain an electroplating solution; the wafer holding device is configured to hold a wafer; the stirring mechanism is disposed inside the electroplating chamber, and when the wafer holding device holds a wafer, the stirring mechanism is arranged parallel to the wafer; the driving mechanism is configured to drive the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so as to agitate the electroplating solution; wherein each main periodic reciprocating motion includes N consecutive sub-periodic reciprocating motions, N being an integer greater than or equal to 2, and adjacent sub-periodic reciprocating motions having equal amplitude and frequency; within the same main period, the end position of the stirring mechanism in the previous sub-period is the starting position of the next adjacent sub-period, and the sub-stroke of the stirring mechanism within the same sub-period is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism within the same sub-period.

[0006] According to a specific implementation of an embodiment of this application, the starting position of the main periodic reciprocating motion is the motion origin position, and the ending position of the main periodic reciprocating motion is the reverse position. The reverse position is the position where the stirring mechanism is furthest from the motion origin position during the main periodic reciprocating motion. Each main periodic reciprocating motion has a main stroke, and the main stroke is the distance between the motion origin position and the reverse position.

[0007] According to one specific implementation of the embodiments of this application, the range of the main stroke includes 10-30mm.

[0008] According to one specific implementation of the embodiments of this application, in the same process, the amplitude of each of the sub-periodic reciprocating motions is equal.

[0009] According to a specific implementation of the embodiments of this application, when N is greater than or equal to 3, the secondary strokes in the same main periodic reciprocating motion may be equal or unequal.

[0010] According to one specific implementation of the embodiments of this application, the range of the secondary stroke includes 1-10mm.

[0011] According to a specific implementation of an embodiment of this application, the stirring mechanism performs the sub-periodic reciprocating motion at a preset frequency, wherein the preset frequency ranges from 3 to 12 Hz.

[0012] According to a specific implementation of an embodiment of this application, the stirring mechanism performs the sub-periodic reciprocating motion with a preset amplitude, wherein the preset amplitude ranges from 12 to 20 mm.

[0013] According to a specific implementation of an embodiment of this application, the time range for each sub-cycle includes 1-600s.

[0014] Secondly, this application proposes an electroplating method, comprising: holding a wafer in an electroplating chamber containing an electroplating solution; a driving mechanism driving a stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so as to agitate the electroplating solution by the stirring mechanism; wherein each main periodic reciprocating motion includes N consecutive sub-periodic reciprocating motions, N being an integer greater than or equal to 2, and adjacent sub-periodic reciprocating motions having equal amplitude and frequency; within the same main period, the end position of the stirring mechanism in the previous sub-period is the starting position of the next adjacent sub-period, and the sub-stroke of the stirring mechanism within the same sub-period is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism within the same sub-period.

[0015] According to a specific implementation of an embodiment of this application, the starting position of the main periodic reciprocating motion is the motion origin position, and the ending position of the main periodic reciprocating motion is the reverse position. The reverse position is the position where the stirring mechanism is furthest from the motion origin position during the main periodic reciprocating motion. Each main periodic reciprocating motion has a main stroke, and the main stroke is the distance between the motion origin position and the reverse position.

[0016] According to one specific implementation of the embodiments of this application, in the same process, the amplitude of each of the sub-periodic reciprocating motions is equal.

[0017] According to a specific implementation of the embodiments of this application, when N is greater than or equal to 3, the secondary strokes in the same main periodic reciprocating motion may be equal or unequal.

[0018] The electroplating equipment and method of the present invention regulate the motion mode of the stirring mechanism by decomposing each main periodic reciprocating motion of the stirring mechanism within the electroplating chamber into N continuous secondary periodic reciprocating motions with the same motion mode, where N is an integer greater than or equal to 2. This invention improves electroplating efficiency while enhancing the ability of the electroplating solution to penetrate deep holes, achieving a uniform electroplating effect. Other features and advantages of the present invention will be set forth in the following description and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention can be realized and obtained by means of the structures indicated in the description and drawings.

[0019] Overview of the attached figures

[0020] The features and performance of the present invention are further described by the following embodiments and accompanying drawings.

[0021] Figure 1 shows a schematic diagram of the motion mode of the drive mechanism driving the stirring mechanism in the prior art of electroplating equipment;

[0022] Figure 2 shows the flow rate of the plating solution on the lower surface of the wafer under the motion mode of the stirring mechanism in Figure 1;

[0023] Figure 3 shows a schematic diagram of the structure of an electroplating apparatus according to an embodiment of the present invention;

[0024] Figure 4 shows a top view of the stirring mechanism according to an embodiment of the present invention;

[0025] Figure 5 shows a schematic diagram of the motion mode of the stirring mechanism according to an embodiment of the present invention;

[0026] Figure 6 shows a schematic diagram of another motion mode of the stirring mechanism according to an embodiment of the present invention; and

[0027] Figure 7 shows the flow rate of the electroplating solution on the lower surface of the wafer under the motion mode of the stirring mechanism implemented according to the present invention.

[0028] Preferred embodiments of the present invention

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0030] In electroplating equipment, to enhance the agitation of the electroplating solution, a stirring mechanism can be installed below the wafer, opposite to it. During electroplating, the stirring mechanism reciprocates in a direction parallel to the wafer to strengthen the agitation of the electroplating solution. Referring to Figure 1, which shows a schematic diagram of the motion mode of the driving mechanism driving the stirring mechanism in a prior art electroplating equipment, the horizontal axis represents the process time in seconds (s), and the vertical axis represents the change in the position of the stirring mechanism in millimeters (mm). This figure uses the change in the position of the stirring mechanism over time to represent the motion mode of the driving mechanism driving the stirring mechanism. The driving mechanism drives the stirring mechanism to vibrate inside the electroplating chamber at a specified frequency and amplitude, as shown in Figure 1. The amplitude is approximately 20 mm, and the frequency is approximately 5 Hz. The flow rate of the electroplating solution on the lower surface of the wafer under this vibration mode was simulated and calculated. The simulation results are shown in Figure 2. The flow rate of the electroplating solution varies greatly at different locations on the lower surface of the wafer. As shown in the figure, the maximum flow rate of the electroplating solution at different locations on the lower surface of the wafer is about 160 mm / s, the minimum flow rate is about 60 mm / s, and the difference is about 100 mm / s. This results in a large difference in the amount of electroplating solution in contact with different locations on the lower surface of the wafer, which in turn affects the uniformity of electroplating.

[0031] The present invention aims to improve the vibration mode of the stirring mechanism to better control the stirring effect of the electroplating solution and achieve uniform electroplating.

[0032] Referring to Figures 3 and 4, this embodiment of the invention discloses an electroplating apparatus for electroplating a wafer surface. The electroplating apparatus includes an electroplating chamber 100, a wafer holding device 200, a stirring mechanism 300, and a driving mechanism 400. The electroplating chamber 100 contains the electroplating solution; the wafer holding device 200 holds the wafer 500; the stirring mechanism 300 includes a plurality of parallel-arranged strip-shaped blades 301, with gaps 302 formed between adjacent blades 301. During the electroplating process, the gaps 302 between adjacent blades 301 allow the liquid and an electric field to pass through. The blades 301 are made of an insulator, such as plastic materials including PVC, PC, CPVC, PPS, PEEK, PTFE, etc. The stirring mechanism 300 is disposed within the electroplating chamber 100, and when the wafer 500 is held on the wafer holding device 200, the stirring mechanism 300 is parallel to the wafer 500.

[0033] A drive mechanism 400 is disposed outside the electroplating chamber 100. The drive mechanism 400 is configured to drive the stirring mechanism 300 to generate continuous main periodic reciprocating motions along a direction parallel to the wafer 500 held by the wafer holding device 200, so that the stirring mechanism 300 agitates the electroplating solution. Each main periodic reciprocating motion includes N consecutive sub-periodic reciprocating motions, where N is an integer greater than or equal to 2; and the amplitude and frequency of adjacent sub-periodic reciprocating motions are equal. Within the same main period, the end position of the stirring mechanism 300 in the previous sub-period is the starting position of the next adjacent sub-period, and the sub-stroke of the stirring mechanism 300 within the same sub-period is a real number greater than 0, where the sub-stroke is the distance between the end position and the starting position of the stirring mechanism 300 within the same sub-period. In some embodiments, in the same process, the amplitude and frequency of each sub-periodic reciprocating motion are equal, which can ensure strong agitation of the electroplating solution while making the difference in the flow rate of the electroplating solution in various parts of the electroplating chamber more uniform. Specifically, when all parts of the electroplating chamber can experience the electroplating solution at various speeds within a sub-cycle, the average speed of the subsequent electroplating solution will be maintained within a relatively stable range, thereby improving the uniformity of the electroplating solution.

[0034] Furthermore, the drive mechanism 400 includes at least one drive component, and the selection range of the drive component includes, but is not limited to, a motor, an electric motor, etc. When the number of drive components is greater than or equal to two, the drive components are symmetrically arranged about the electroplating chamber 100 to stabilize the stirring mechanism 300, maintain the balance of the stirring mechanism 300, and thus achieve the purpose of stabilizing the stirring of the electroplating solution. As shown in Figure 3, in this embodiment, the drive mechanism 400 includes two drive components, symmetrically arranged on both sides of the electroplating chamber 100.

[0035] For example, referring to Figure 3, during the reciprocating motion of the stirring mechanism 300 inside the electroplating chamber 100, the stirring mechanism 300 is initially positioned at the starting point of the motion. The driving mechanism 400 drives the stirring mechanism 300 to perform continuous main periodic reciprocating motion parallel to the wafer 500 within the wafer holding device 200. For ease of understanding, this application defines the starting point of the stirring mechanism 300 as the origin of motion; and the ending point of the stirring mechanism 300 as the reversal position, which is the position furthest from the origin of motion during the main periodic reciprocating motion. A main periodic reciprocating motion specifically consists of the stirring mechanism 300 starting from the starting point (origin) and moving towards the ending point. After reaching the ending point (reversal position), it moves back towards the origin, ending at the origin. Multiple repeated main periodic reciprocating motions can be included in the same process to enhance the agitation of the electroplating solution by the stirring mechanism 300, thereby achieving uniform electroplating of the wafer 500. As shown in Figure 5, which illustrates two main cycles, in this embodiment, the origin of the stirring mechanism 300 is at 0 mm, and the reverse position is at 32 mm.

[0036] Furthermore, each primary periodic reciprocating motion of the stirring mechanism 300 specifically includes: the stirring mechanism 300 performing N secondary periodic reciprocating motions at a preset frequency f1 and a preset amplitude A1. As shown in Figure 5, each primary cycle includes 3 secondary cycles, and the stirring mechanism 300's motion frequency in each secondary cycle is f1, and the motion amplitude is A1. In each primary cycle, the stirring mechanism 300 gradually moves from the origin position to the reverse position after 3 secondary periodic reciprocating motions, and returns to the origin position when it reaches the end of the primary cycle, starting the next primary periodic reciprocating motion.

[0037] A primary periodic reciprocating motion includes a primary stroke L and at least one secondary stroke M. The primary stroke is the maximum distance of the stirring mechanism 300 from the origin position, i.e., the distance between the origin position and the reverse position; the secondary stroke is the distance between the end position and the start position of the stirring mechanism 300 within the same secondary cycle. It should be understood that the primary stroke L is a value determined based on the size of the electroplating chamber 100. Generally, the value of the primary stroke L is a fixed value depending on the size of the electroplating chamber 100. For example, depending on the size of the electroplating chamber 100, the primary stroke L is generally a fixed value between 10-30 mm, such as 10 mm, 20 mm, 30 mm, etc.; while the number of secondary cycles N included in each primary periodic reciprocating motion is a manually set value, where N is an integer greater than or equal to 2, indicating that one primary periodic reciprocating motion consists of N consecutive... The process consists of secondary periodic reciprocating motions. The frequency f1 and amplitude A1 of each secondary periodic reciprocating motion are manually set values. For example, the frequency f1 is generally preset to a range of 3-12Hz, such as 3Hz, 5Hz, 10Hz, 12Hz, etc.; the amplitude A1 is generally preset to 12-20mm, such as 12mm, 15mm, 18mm, 20mm, etc.; and the secondary stroke M of one secondary cycle is also manually set before the process begins, with N-1 secondary strokes. It should be noted that the time t used for each secondary cycle in each primary periodic reciprocating motion is generally preset to 1-600s, such as 1s, 60s, 100s, 300s, 600s, etc.

[0038] Furthermore, when N is greater than or equal to 3, that is, when the number of secondary strokes is greater than or equal to 2, all secondary strokes can be equal or unequal, and the settings are made according to the actual process conditions during operation. Specifically, when N is greater than or equal to 3, it means that a main periodic reciprocating motion consists of greater than or equal to 3 consecutive secondary periodic reciprocating motions. That is, the main stroke L is completed in N strokes, and N-1 secondary strokes will be generated during the completion of the main stroke L. These N-1 secondary strokes can be equal or unequal.

[0039] For example, referring to Figure 5, when N equals 3, that is, when L includes 2 secondary strokes in this embodiment, the distance traveled after each secondary cycle can be set in a way that is not equal, that is, secondary stroke M1 ≠ secondary stroke M2. As shown in Figure 5, a main periodic reciprocating motion includes one main stroke L and two secondary strokes M1 and M2, and the number of secondary periodic reciprocating motions in a main periodic reciprocating motion is N = 3; the preset frequency f1 in each secondary periodic reciprocating motion is 5Hz, the preset amplitude A1 is 20mm, and the time used for each secondary cycle is t = 1s; the main stroke is L = 12mm, the secondary strokes are M1 = 4, and M2 = 8.

[0040] Referring to Figure 6, in another embodiment, when N equals 3, that is, when L includes two sub-strokes in this embodiment, the distance traveled after each sub-cycle is equal, i.e., sub-stroke M1 = sub-stroke M2. As can be seen from Figure 6, one main periodic reciprocating motion of the stirring mechanism 300 consists of three sub-periodic reciprocating motions; one main periodic reciprocating motion includes one main stroke and two equal sub-strokes, i.e., N = 3, M1 = M2 = 6mm, and main stroke L = 12mm; in each sub-periodic reciprocating motion, the vibration frequency of the stirring mechanism 300 is a preset frequency f1 = 5Hz, and the preset amplitude A1 = 20mm; the time taken for each sub-periodic reciprocating motion is t = 1s. When switching between adjacent sub-periodic reciprocating motions, the stirring mechanism 300 does not need to return to the origin of the current sub-period. Instead, it directly uses the end point of the current sub-period as the origin of the next sub-period. In this way, by setting the start and end positions of each sub-period (i.e., setting the sub-stroke), the stirring mechanism 300 can gradually move outward within the range of motion of each sub-period in a main cycle. The peak and trough values ​​of the stirring mechanism's position gradually increase, and in the last sub-period, the farthest position of the stirring mechanism 300 reaches the reversal position. Similarly, when the stirring mechanism 300 completes one main cycle within the electroplating chamber 100, the drive mechanism 400 drives the stirring mechanism 300 to the origin of the last sub-period, and then continues to drive the stirring mechanism 300 back to the origin of the first sub-period, i.e., the origin of the main cycle, before continuing the next main periodic reciprocating motion, achieving the effect of thoroughly stirring the electroplating solution.

[0041] The present invention also proposes an electroplating method in which a wafer 500 is held in an electroplating chamber containing an electroplating solution, and the wafer 500 is electroplated. A stirring mechanism 300 is provided inside the electroplating chamber 100 and parallel to the wafer 500. The stirring mechanism 300 is connected to a driving mechanism 400. The driving mechanism 400 drives the stirring mechanism 300 to perform continuous main periodic reciprocating motion parallel to the wafer 500, so that the stirring mechanism 300 agitates the electroplating solution. Each main periodic reciprocating motion includes N consecutive sub-periodic reciprocating motions, where N is an integer greater than or equal to 2, and the amplitude and frequency of adjacent sub-periodic reciprocating motions are equal.

[0042] Within the same main cycle, the end position of the stirring mechanism 300 in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the secondary stroke of the stirring mechanism 300 within the same sub-cycle is a real number greater than 0, where the secondary stroke is the distance between the end position and the starting position of the stirring mechanism 300 within the same sub-cycle.

[0043] Furthermore, the starting position of the main periodic reciprocating motion is the origin position; the ending position of the main periodic reciprocating motion is the reverse position; the reverse position is the position of the stirring mechanism that is furthest from the origin position during the main periodic reciprocating motion; each main periodic reciprocating motion has a main stroke, which is the distance between the origin position and the reverse position.

[0044] Furthermore, in the same process, the amplitude of each sub-periodic reciprocating motion is equal.

[0045] Furthermore, when N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion can be equal or unequal.

[0046] In the process of implementing the proposed scheme according to the present invention, the flow rate of the electroplating solution at various locations near the lower surface of wafer 500 is simulated and calculated. The results are shown in Figure 7. Figure 7 shows the flow rate of the electroplating solution near the lower surface of wafer 500 during each sub-periodic reciprocating motion of the main periodic reciprocating motion. In the figure, the horizontal axis represents the horizontal position coordinate of the wafer with the wafer center as the 0 coordinate, in mm, and the vertical axis represents the flow rate of the electroplating solution on the lower surface of the wafer, in mm / s. Line 601 represents the first sub-period. During the primary reciprocating motion, the flow rate of the electroplating solution on the lower surface of wafer 500 is shown in line 602; during the second secondary reciprocating motion, the flow rate of the electroplating solution on the lower surface of wafer 500 is shown in line 603; during the third secondary reciprocating motion, the flow rate of the electroplating solution on the lower surface of wafer 500 is shown in line 604; the average flow rate of the electroplating solution on the lower surface of the wafer in the electroplating method of this embodiment of the invention is shown in line 604, specifically the average flow rate of the electroplating solution at various points on the lower surface of the wafer after a complete primary reciprocating motion. As shown in Figure 7, although the flow rate difference of the electroplating solution at various points on the lower surface of the wafer is relatively large (approximately 100 mm / s) during the first, second, and third sub-periodic reciprocating motions, after one main reciprocating motion is completed (i.e., after the first, second, and third sub-periodic reciprocating motions), as shown by line 604, the flow rate of the electroplating solution at various points on the lower surface of the wafer remains relatively stable within a relatively stable range, with a small difference (approximately 20 mm / s), and the flow rate of the electroplating solution can also be maintained at a relatively high level (approximately 110 mm / s). This indicates that through the design of the electroplating equipment and electroplating method of the present invention, the flow rate of the electroplating solution on the lower surface of the wafer 500 can reach a relatively uniform and high level, thereby achieving a stable and uniform electroplating effect while ensuring sufficient stirring intensity of the electroplating solution.

[0047] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electroplating device, characterized in that, include: Electroplating chamber, wafer holding device, stirring mechanism, and drive mechanism; among which... The electroplating chamber is used to contain the electroplating solution; The wafer holding device is configured to hold the wafer; The stirring mechanism is disposed inside the electroplating chamber. When the wafer holding device holds a wafer, the stirring mechanism is arranged parallel to the wafer. The driving mechanism is configured to drive the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism agitates the electroplating solution. Each of the main periodic reciprocating motions includes N consecutive sub-periodic reciprocating motions, where N is an integer greater than or equal to 2, and the amplitude and frequency of adjacent sub-periodic reciprocating motions are equal. Within the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the secondary stroke of the stirring mechanism within the same sub-cycle is a real number greater than 0, wherein the secondary stroke is the distance between the end position and the starting position of the stirring mechanism within the same sub-cycle.

2. The electroplating equipment according to claim 1, characterized in that, The starting position of the main periodic reciprocating motion is the motion origin position, and the ending position of the main periodic reciprocating motion is the reverse position. The reverse position is the position where the stirring mechanism is furthest from the motion origin position during the main periodic reciprocating motion. Each main periodic reciprocating motion has a main stroke, which is the distance between the motion origin position and the reverse position.

3. The electroplating equipment according to claim 2, characterized in that, The range of the main stroke includes 10-30mm.

4. The electroplating equipment according to claim 1, characterized in that, In the same process, the amplitude of each of the sub-periodic reciprocating motions is equal.

5. The electroplating equipment according to claim 1, characterized in that, When N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion can be equal or unequal.

6. The electroplating equipment according to claim 1 or 5, characterized in that, The range of the secondary stroke includes 1-10 mm.

7. The electroplating equipment according to claim 1, characterized in that, The stirring mechanism performs the sub-periodic reciprocating motion at a preset frequency, wherein the preset frequency ranges from 3 to 12 Hz.

8. The electroplating equipment according to claim 1 or 7, characterized in that, The stirring mechanism performs the sub-periodic reciprocating motion with a preset amplitude, wherein the preset amplitude ranges from 12 to 20 mm.

9. The electroplating equipment according to claim 1, characterized in that, The time range for each of the sub-cycles is 1-600 seconds.

10. An electroplating method, characterized in that, include: The wafer is held in an electroplating chamber containing electroplating solution; The driving mechanism drives the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism agitates the electroplating solution; Each of the main periodic reciprocating motions includes N consecutive sub-periodic reciprocating motions, where N is an integer greater than or equal to 2, and the amplitude and frequency of adjacent sub-periodic reciprocating motions are equal. Within the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the secondary stroke of the stirring mechanism within the same sub-cycle is a real number greater than 0, wherein the secondary stroke is the distance between the end position and the starting position of the stirring mechanism within the same sub-cycle.

11. The electroplating method according to claim 10, characterized in that, The starting position of the main periodic reciprocating motion is the motion origin position, and the ending position of the main periodic reciprocating motion is the reverse position. The reverse position is the position where the stirring mechanism is furthest from the motion origin position during the main periodic reciprocating motion. Each main periodic reciprocating motion has a main stroke, which is the distance between the motion origin position and the reverse position.

12. The electroplating method according to claim 11, characterized in that, In the same process, the amplitude of each of the sub-periodic reciprocating motions is equal.

13. The electroplating method according to claim 11, characterized in that, When N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion can be equal or unequal.

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