Modified polyhedral oligomeric silsesquioxane, silicone sealant and preparation method therefor, and flexible semiconductor device and thin-film encapsulation method therefor

Abstract

Disclosed in the present invention are modified polyhedral oligomeric silsesquioxane, a silicone sealant and a preparation method therefor, and a flexible semiconductor device and a thin-film encapsulation method therefor. The silicone sealant comprises the following components in parts by weight: 5-70 parts of modified polyhedral oligomeric silsesquioxane, 15-90 parts of a non-silicon-based diluent, and 0.1-10 parts of a photoinitiator. In the present invention, the modified polyhedral oligomeric silsesquioxane with specific substituent groups is used and is matched with a corresponding reactive diluent and a photoinitiator to prepare the silicone sealant, and the silicone sealant can be directly used as an encapsulating material for an organic light-emitting device by means of ink-jet printing, and has a low water vapor transmission rate, low cure shrinkage and high light transmittance.

Description

Modified cage-type oligomeric silsesquioxane, organosilicon sealant and preparation method thereof, flexible semiconductor device and thin film packaging method

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to a Chinese patent application filed with the Patent Office of China on July 17, 2023, with application number 202310880530.9 and application name “Modified cage-type oligomeric silsesquioxane, silicone sealant and preparation method thereof, flexible semiconductor device and thin film encapsulation method”, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to the technical field of packaging materials, and in particular to a modified cage-type oligomeric silsesquioxane, an organosilicon sealant and a preparation method thereof, a flexible semiconductor device and a thin film packaging method. Background Art

[0004] Cage oligomeric silsesquioxane (POSS) is a nanostructured organic-inorganic hybrid material with unique physical and chemical properties. Its framework structure imparts excellent dielectric, optical, and thermal stability. The introduction of diverse reactive groups imparts excellent reactivity and compatibility to POSS. This makes modified cage oligomeric silsesquioxanes well-suited for use as packaging materials for electronic devices.

[0005] Thin-film encapsulation is one of the most commonly used encapsulation methods for flexible displays. During this process, the organic thin film layer is typically prepared using an inkjet printer. However, the shielding effect of the side groups in the cage-type oligomeric silsesquioxane structure makes the molecule non-polar and has low surface tension. Direct use can result in uneven boundaries or protrusions beyond the base of the film formed after leveling on the substrate during the inkjet printing process. Therefore, developing an encapsulation material that exhibits low cure shrinkage and water vapor transmission rate and can be efficiently inkjet-printed for use as an organic light-emitting device has important research significance and application value.

[0006] Summary of the Invention

[0007] In order to solve the above problems, the present invention provides a modified cage-type oligomeric silsesquioxane and an organosilicon sealant using the modified cage-type oligomeric silsesquioxane.

[0008] Another object of the present invention is to provide a method for preparing the above-mentioned organosilicon sealant.

[0009] Another object of the present invention is to provide a thin film packaging method for a flexible semiconductor device.

[0010] Another object of the present invention is to provide a flexible semiconductor device prepared by the thin film encapsulation method.

[0011] To achieve the above object, the technical solution of the present invention is as follows:

[0012] The present invention provides a modified cage-type oligomeric silsesquioxane, the chemical structure of which is shown in formula (I):

[0013] wherein R1, R2, R3, and R4 are each independently substituted or unsubstituted C 1-20 Alkylene, substituted or unsubstituted C 1-30 Alkylene ether group, substituted or unsubstituted C 6-30 Arylene or substituted or unsubstituted C 7-30 One of arylalkylene; R5, R6, R7, R8 are each independently substituted or unsubstituted C 1-20 Alkyl, substituted or unsubstituted C 1-30 Alkyl ether group, substituted or unsubstituted C 6-30 Aryl, substituted or unsubstituted C 7-30 One of the aralkyl groups;

[0014] Y1, Y2, Y3, and Y4 are each independently one of the following structures:

[0015] The structural formula of X is one of the following structures:

[0016] wherein B1, B2, B3, B4, B5, B6, and B7 are each independently hydrogen, or substituted or unsubstituted C 1-30 alkyl.

[0017] The present invention also provides an organic silicon sealant comprising the following components in weight fractions: 5-70 parts of the modified cage-type oligomeric silsesquioxane, 15-90 parts of a non-silicon-based diluent, and 0.1-10 parts of a photoinitiator.

[0018] The present invention also provides a method for preparing an organic silicone sealant, comprising the following steps: mixing the modified cage-type oligomeric silsesquioxane, the non-silicon-based diluent and the photoinitiator under light-proof conditions and then soaking them in a nitrogen atmosphere to obtain the organic silicone sealant.

[0019] The present invention also provides a thin film packaging method for a flexible semiconductor device, comprising the following steps:

[0020] S1: Integrating semiconductor components on a flexible substrate;

[0021] S2: depositing a layer of inorganic material on the surface of the semiconductor element in S1 to obtain a first inorganic layer with a thickness of 5-1000 nm;

[0022] S3: depositing a layer of the organic silicone sealant on the surface of the inorganic layer in S2, and then curing it with ultraviolet light to obtain an organic layer;

[0023] S4: depositing another layer of inorganic material on the surface of the organic layer in S3 to obtain another second inorganic layer with a thickness of 5-1000 nm, thereby achieving thin film encapsulation of the semiconductor element;

[0024] Wherein, the inorganic materials in S2 and S4 are each independently at least one of silicon nitride, titanium oxide, aluminum oxide and silicon oxide.

[0025] The present invention also provides a flexible semiconductor device prepared using the above-mentioned thin film encapsulation method, comprising: a flexible substrate, a semiconductor element and a thin film encapsulation structure, wherein the semiconductor element is arranged on one side of the flexible substrate, and the thin film encapsulation structure comprises a first inorganic layer, an organic layer and a second inorganic layer, and the first inorganic layer, the organic layer and the second inorganic layer are stacked in sequence on a surface of the semiconductor element facing away from the flexible substrate.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] The present invention uses multifunctional active modified cage oligomeric silsesquioxane as the main component of the packaging material, and is prepared with the corresponding active diluent and photoinitiator to prepare an organic silicone sealant. The sealant can be directly used as a packaging material for organic light-emitting devices by inkjet printing. It has low water vapor transmission rate and low curing shrinkage rate, while maintaining high light transmittance. Its water vapor transmission rate can be as low as 3.1x10 -4 g / m 2 day, the curing shrinkage can be as low as 2.9%. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] FIG1 is a schematic structural diagram of a thin film encapsulation structure provided in the present invention.

[0029] FIG2 is a schematic structural diagram of a flexible semiconductor device provided in the present invention.

[0030] FIG3 is a flow chart showing the formation of an organic layer by the organosilicon sealant provided in the present invention. DETAILED DESCRIPTION

[0031] The present invention is further described below with reference to the examples. These examples are intended to illustrate the present invention only and are not intended to limit the scope of the present invention. Experimental methods in the following examples where specific conditions are not specified are generally performed in accordance with conventional conditions in the art or the conditions recommended by the manufacturer; the raw materials and reagents used, unless otherwise specified, are all commercially available from conventional markets. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention fall within the scope of protection claimed in the present invention.

[0032] The present invention provides a modified cage-type oligomeric silsesquioxane, the chemical structure of which is shown in formula (I):

[0033] wherein R1, R2, R3, and R4 are each independently substituted or unsubstituted C 1-20 Alkylene, substituted or unsubstituted C 1-30 Alkylene ether group, substituted or unsubstituted C 6-30 Arylene or substituted or unsubstituted C 7-30 One of arylalkylene; R5, R6, R7, R8 are each independently substituted or unsubstituted C 1-20 Alkyl, substituted or unsubstituted C 1-30 Alkyl ether group, substituted or unsubstituted C 6-30 Aryl or substituted or unsubstituted C 7-30 One of the aralkyl groups;

[0034] Y1, Y2, Y3, and Y4 are each independently one of the following structures:

[0035] The structural formula of X is one of the following structures:

[0036] B1, B2, B3, B4, B5, B6, and B7 are each independently hydrogen or substituted or unsubstituted C 1-30 alkyl.

[0037] The present invention uses a modified cage-type oligomeric silsesquioxane to successfully introduce POSS groups into the cured film molecular chain. The introduction of a large number of polar hydrogen bond donors, or Y groups, into the modified cage-type oligomeric silsesquioxane significantly increases hydrogen bonding within the molecule, thereby increasing the surface tension of the silicone, making it more conducive to inkjet printing.

[0038] Preferably, the modified cage-type oligomeric silsesquioxane is a compound having the following structural formula A-1, A-2, A-3, A-4, A-5, A-6, A-7, A-8, A-9, A-10, A-11, A-12, A-13, A-14 or A-15:

[0039] The present invention also provides an organic silicon sealant comprising the following components in weight fractions: 5-70 parts of the modified cage-type oligomeric silsesquioxane, 15-90 parts of a non-silicon-based diluent, and 0.1-10 parts of a photoinitiator.

[0040] The present invention uses multifunctional active modified cage oligomeric silsesquioxane as the main component of the packaging material, and is prepared with the corresponding active diluent and photoinitiator to obtain an organic silicone sealant. The sealant can be directly used as a packaging material for organic light-emitting devices by inkjet printing. It has low water vapor permeability and low curing shrinkage, while maintaining high light transmittance. Its water vapor permeability can be as low as 3.1x10-4g / m 2 day, the curing shrinkage can be as low as 2.9%.

[0041] Preferably, the organic silicone sealant comprises the following components in weight fractions: 8 parts of modified cage-type oligomeric silsesquioxane, 90 parts of non-silicon-based diluent, and 2 parts of photoinitiator.

[0042] Preferably, the non-silicon-based diluent is at least one of an epoxy diluent and an acrylate diluent.

[0043] Further preferably, the epoxy diluent includes 1,4-butanediol diglycidyl ether, 1,3-propylene glycol diglycidyl ether, 1,6-hexanediol diglycidyl ether, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexylcarboxylate, 1,7-heptanediol diglycidyl ether, 1,8-octanediol diglycidyl ether, trimethylolpropane triglycidyl ether and 1,4-bis[(glycidyloxy)methyl]cyclohexane, 1,9-nonanediol diglycidyl ether, bisphenol A diglycidyl ether, 1,10-decanediol diglycidyl ether, 1,11-undecanediol diglycidyl ether, 1,12-dodecanediol diglycidyl ether, 1,13-tridecanediol diglycidyl ether, One of 1,14-tetradecanedioic acid diglycidyl ether, bis(7-oxabicyclo[4.1.0]3-heptylmethyl)adipate, 1,15-pentadecanedioic acid diglycidyl ether, neopentyl glycol diglycidyl ether, dipropylene glycol diglycidyl ether, ethylene glycol diglycidyl ether, p-tert-butylphenol diglycidyl ether, benzyl alcohol glycidyl ether, o-cresol glycidyl ether, bis[(3,4-epoxy-6-methylcyclohexyl)methyl]adipate, ethylene glycol diglycidyl ether, 1,2-epoxyhexadecane, 3,7-bis(3-oxetanyl)-5-oxononane, trimethylolpropane triglycidyl ether or 3-ethyl-3-[(2-ethylhexyloxy)methyl]butylene oxide.

[0044] More preferably, the acrylate diluent may be an alkanediol di(meth)acrylate (alkane is a chain compound and a saturated hydrocarbon) having a carbon number of 2 or more and 20 or less, such as 1,17-heptadecanediol di(meth)acrylate, 1,3-cyclohexanediol di(meth)acrylate, 1,8-octanediol di(meth)acrylate, 1,20-eicosanediol di(meth)acrylate, 1,11-undecanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,15-pentadecanediol di(meth)acrylate, 1,13-tridecanediol di(meth)acrylate, 1,7-octanediol di(meth)acrylate, 1,2-butanediol di(meth)acrylate, 3-methyl-1,5- Pentanediol di(meth)acrylate, 1,18-octadecanediol di(meth)acrylate, 1,16-hexadecanediol di(meth)acrylate, 2,4-diethyl-1,5-pentanediol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,5-pentanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,7-heptanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, 1,12-dodecanediol di(meth)acrylate, 1,14-tetradecanediol di(meth)acrylate, 1,19-nonadecanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, and the like.

[0045] The acrylate diluent may also be an alkanediol di(meth)acrylate (alkane is a cyclic compound) having a carbon number of 4 or more and 20 or less, such as 1,2-cyclohexanediol di(meth)acrylate, 1,4-cyclohexanediol di(meth)acrylate, tricyclodecane dimethanol di(meth)acrylate, cyclohexanedimethanol di(meth)acrylate, hydrogenated bisphenol A di(meth)acrylate, etc.

[0046] Preferably, the photoinitiator is a cationic photoinitiator, including at least one of diazonium salts, diaryliodonium salts, triarylsulfonium salts, alkylsulfonium salts, iron arene salts, sulfonyloxy ketones and triarylsiloxane ethers.

[0047] Further preferably, the photoinitiator is diphenyl iodonium hexafluorophosphate, 4-isobutylphenyl-4'-methylphenyl iodonium hexafluorophosphate (Irgacure 250), triphenylsulfonium hexafluorophosphate, 4-phenylthiophenyl diphenylsulfonium salt, tris[4-(4-acetylphenyl)thio]phenyl]-hexafluorophosphate (Irgacure 209), 4-dodecyloxyphenyl diphenylsulfonium hexafluoroantimonate (SOC10), 9-[4-(2-hydroxyethoxy)-phenyl]thianthrenesulfonium hexafluorophosphate (Esacure 1187), 10-(4-biphenyl)-2 -Isopropylthioxanthonesulfonium hexafluorophosphate, [7-(1-methylethyl)-9-oxo-9H-thioxanthen-2-yl]bis(4-methylphenyl)sulfonium hexafluoroantimonate, bis[(4-diphenylsulfonium)phenyl]sulfide-bis-hexafluorophosphate, 4-phenylthiophenyldiphenylsulfonium salt, S,S'-(thiodi-4,1-phenylene)bis[S,S-bis[4-(2-hydroxyethoxy)phenyl]-sulfonium hexafluoroantimonate, 4,4 '-Bis(thianthren-9-yl)biphenyl hexafluorophosphate, (4-hydroxyphenyl)methyl(benzyl)hexasulfonium fluorophosphate, 4-acetoxyphenyldimethylsulfonium hexafluoroantimonate, (4-hydroxyphenyl)methyl[(2-methylphenyl)methyl]-sulfonium hexafluoroantimonate, dodecylmethyl(2-oxo-2-phenylethyl)-sulfonium hexafluoroantimonate, diphenyliodonium hexafluorophosphate, bis(4-methylphenyl)iodonium hexafluorophosphate, bis(4 -isopropylbenzene) iodonium hexafluorophosphate, bis(4-tert-butylbenzene) iodonium hexafluorophosphate, bis(4-dodecylbenzene) iodonium hexafluorophosphate, 4-octyloxyphenyl iodonium hexafluoroantimonate, potassium bistrifluoromethanesulfonamide, tris[(trifluoromethyl)sulfonyl]-methane lithium, tetrakis[1,1,1,3,3,3,-hexafluoro-2-(trifluoromethyl)-2-propane-aluminum lithium salt, 6-isopropylphenylferrocene hexafluorophosphate (Irgacure 261), bis[2,6-difluoro-3-(N-pyrrolyl)aryl]ferrocene (Irgacure 784), 4-isobutylphenyl-4'-methylphenyliodonium hexafluorophosphate (Omnicat 250), high molecular weight sulfonium hexafluorophosphate (Omnicat 270), triarylsulfonium hexafluoroantimonate (Omnicat 320), trisulfonium hexafluoroantimonate (Omnicat 432), 1,1'-(methylenebis-4,1-phenylene)bis[2-hydroxy-2-methyl-1-propanone] (Irgacure 127), and at least one of 2-benzyl-2-(dimethylamino)-1-[4-(morpholinyl)phenyl)]-1-butanone (Irgacure 369).

[0048] The present invention also provides a method for preparing the above-mentioned organosilicon sealant, comprising the following steps: mixing a modified cage-type oligomeric silsesquioxane, a non-silicon-based diluent and a photoinitiator in a nitrogen atmosphere in the dark, and soaking them to obtain the organosilicon sealant.

[0049] Preferably, the mixing time is 2-3 hours, and the soaking step is to soak in activated 4A molecular sieve for 30-50 hours.

[0050] In addition, the present invention also provides a thin film packaging method for a flexible semiconductor device, comprising the following steps:

[0051] S1: Integrating semiconductor components on a flexible substrate;

[0052] S2: depositing a layer of inorganic material on the surface of the semiconductor element in S1 to obtain a first inorganic layer with a thickness of 5-1000 nm;

[0053] S3: depositing a layer of the above-mentioned silicone sealant on the surface of the inorganic layer described in S2, and then curing it with ultraviolet light to obtain an organic layer;

[0054] S4: depositing another layer of inorganic material on the surface of the organic layer in S3 to obtain another second inorganic layer with a thickness of 5-1000 nm, thereby achieving thin film encapsulation of the semiconductor element;

[0055] Wherein, the inorganic materials in steps S2 and S4 are each independently at least one of silicon nitride, titanium oxide, aluminum oxide or silicon oxide.

[0056] In one embodiment, the semiconductor element is one of an OLED, a Micro-LED, a silicon-based semiconductor element, an AsGa semiconductor element, or a gallium phosphide semiconductor element.

[0057] The present invention also provides a flexible semiconductor device manufactured using the above-mentioned thin-film encapsulation method, comprising a flexible substrate, a semiconductor element, and a thin-film encapsulation structure. The semiconductor element is disposed on one side of the flexible substrate. The thin-film encapsulation structure comprises a first inorganic layer, an organic layer, and a second inorganic layer, which are sequentially stacked on a surface of the semiconductor element facing away from the flexible substrate. A schematic structural diagram of the thin-film encapsulation structure is shown in Figure 1.

[0058] Specifically, the inorganic material is first deposited on the surface of the semiconductor element using chemical vapor deposition to form a first inorganic layer. A layer of the aforementioned silicone sealant is then sprayed onto the first inorganic layer using an inkjet method to form the organic layer. A second inorganic layer is then deposited onto the organic layer to obtain the flexible semiconductor device. A schematic structural diagram of the resulting flexible semiconductor device is shown in Figure 2.

[0059] The process of obtaining the organic layer by inkjet is shown in Figure 3. The inkjet step includes using the above-mentioned silicone sealant as ink ink, using a flexible substrate to align and discharge the ink, the ink contacts the flexible substrate, spreads and flows on the flexible substrate, and then cures into a film under ultraviolet light curing (UV LED) conditions to obtain the organic layer.

[0060] The preparation and performance of the organosilicon sealant of the present invention are described below using specific examples and comparative examples.

[0061] Some of the reagents selected in the embodiments and comparative examples of the present invention are described as follows:

[0062] (A) Modified cage-type oligomeric silsesquioxane: see A-1, A-2, A-3, A-4, A-5, A-6, A-7, A-8, A-9, A-10;

[0063] (B) Non-silicon-based diluent: 1,8-octanediol diglycidyl ether;

[0064] (C) Photoinitiators: Irgacure 250 and Irgacure 127.

[0065] The preparation method of the organosilicon sealant in each embodiment of the present invention is as follows:

[0066] In a glove box (N2 atmosphere), modified cage-type oligomeric silsesquioxane (8 parts), non-silicon-based diluent 1,8-octanediol diglycidyl ether (90 parts) and photoinitiator Irgacure 250 (2 parts) were added to a 500 mL volumetric flask, and the mixture was vigorously mixed for 2 h in the dark, and then soaked in activated 4A molecular sieves for 48 h to prepare the silicone sealant.

[0067] The organic silicone sealant prepared above was formed into a film (10 μm) on a substrate by inkjet method, and after UV curing, its water vapor transmission rate, light transmittance, and curing shrinkage performance were evaluated.

[0068] The performance testing methods and standards of the silicone sealants in the embodiments and comparative examples of the present invention are as follows:

[0069] (1) Water vapor transmission rate: Measured using a water permeability meter (Model 3, MOCON) at 40°C and 100% relative humidity for 24 h.

[0070] (2) Light transmittance: UV-visible spectrophotometer (Lambda 650S Platinum Elmer);

[0071] (3) Curing shrinkage: The curing volume shrinkage was determined according to the international standard ISO 3521:1997.

[0072] Examples 1-10

[0073] The present invention provides a series of organic silicon sealants according to embodiments. The formulations and performance test results are shown in Table 1.

[0074] Table 1 Formula (parts) and performance test results of the organic silicon sealant in the embodiment

[0075] Comparative Example 1

[0076] In Comparative Example 1, the modified cage-type oligomeric silsesquioxane was not added, and 98 parts of a non-silicon-based diluent, 1,8-octanediol diglycidyl ether, was added. The rest was the same as in Example 1.

[0077] The water vapor permeability of the sealant prepared in Comparative Example 1 was 1.9x10 -3 g / m 2 ·day, light transmittance is 95%, and curing shrinkage is 8.9%.

[0078] From the performance test results of Examples 1-10 and Comparative Example 1, it can be seen that the prepared silicone sealant has excellent water vapor permeability resistance, with a water vapor permeability of <5.5x10 -4 g / m 2 The modified cage-type oligomeric silsesquioxane of the present invention exhibits excellent water vapor resistance, light transmittance, low cure shrinkage, and good thermal stability. The silicone sealant is well suited for encapsulating organic light-emitting devices and can be directly inkjet printed, achieving highly efficient production.

[0079] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not limiting. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention.

Claims

1. A modified cage-type oligomeric silsesquioxane, characterized in that: Its chemical structure is shown in formula (I): Wherein, R1, R2, R3, and R4 are each independently substituted or unsubstituted C 1-20 Alkylene, substituted or unsubstituted C 1-30 Alkylene ether group, substituted or unsubstituted C 6-30 Arylene or substituted or unsubstituted C 7-30 One of arylalkylene; R5, R6, R7, R8 are each independently substituted or unsubstituted C 1-20 Alkyl, substituted or unsubstituted C 1-30 Alkyl ether group, substituted or unsubstituted C 6-30 Aryl, substituted or unsubstituted C 7-30 One of the aralkyl groups; Y1, Y2, Y3, and Y4 are each independently one of the following structures: X is one of the following structures: wherein B1, B2, B3, B4, B5, B6, and B7 are each independently hydrogen, or substituted or unsubstituted C 1-30 Alkylene.

2. The modified cage-type oligomeric silsesquioxane according to claim 1, characterized in that: The modified cage-type oligomeric silsesquioxane is one of the following compounds A-1, A-2, A-3, A-4, A-5, A-6, A-7, A-8, A-9, A-10, A-11, A-12, A-13, A-14 or A-15:

3. An organic silicon sealant, characterized in that: The invention comprises the following components in weight fractions: 5-70 parts of the modified cage-type oligomeric silsesquioxane according to any one of claims 1 to 2, 15-90 parts of a non-silicon-based diluent, and 0.1-10 parts of a photoinitiator.

4. The organic silicon sealant according to claim 3, characterized in that: The non-silicon-based diluent is at least one of an epoxy diluent and an acrylate diluent.

5. The organic silicon sealant according to claim 3, characterized in that: The photoinitiator is at least one of diazonium salts, diaryl iodonium salts, triaryl sulfonium salts, alkyl sulfonium salts, iron arene salts, sulfonyloxy ketones and triaryl siloxane ethers.

6. A method for preparing the organosilicon sealant according to any one of claims 3 to 5, characterized in that: The method comprises the following steps: in a nitrogen atmosphere, the modified cage-type oligomeric silsesquioxane, the non-silicon-based diluent and the photoinitiator are mixed and immersed in a light-proof condition to obtain the organic silicon sealant.

7. The method for preparing the organosilicon sealant according to claim 6, characterized in that: The mixing time is 2-3 hours, and the soaking step is to soak the activated 4A molecular sieve for 30-50 hours.

8. A thin film packaging method for a flexible semiconductor device, characterized in that: The steps include: S1: Integrating semiconductor components on flexible substrates; S2: depositing a layer of inorganic material on the surface of the semiconductor element in S1 to obtain a first inorganic layer with a thickness of 5-1000 nm; S3: depositing a layer of the organic silicon sealant as described in any one of claims 3 to 5 on the surface of the inorganic layer described in S2, and then curing it with ultraviolet light to obtain an organic layer; S4: depositing another layer of inorganic material on the surface of the organic layer in S3 to obtain another second inorganic layer with a thickness of 5-1000 nm, thereby realizing thin film encapsulation of the semiconductor element; Wherein, the inorganic materials in S2 and S4 are each independently at least one of silicon nitride, titanium oxide, aluminum oxide or silicon oxide.

9. The thin film encapsulation method according to claim 8, characterized in that: The semiconductor element is an OLED, a Micro-LED, a silicon-based semiconductor element, an AsGa semiconductor element or a gallium phosphide semiconductor element.

10. A flexible semiconductor device, characterized in that: Prepared by the thin film encapsulation method according to any one of claims 8 to 9, comprising: Flexible substrates; A semiconductor element is disposed on one side of the flexible substrate; The thin film packaging structure comprises a first inorganic layer, an organic layer and a second inorganic layer, wherein the first inorganic layer, the organic layer and the second inorganic layer are sequentially stacked on a surface of the semiconductor element away from the flexible substrate.

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