Display substrate and manufacturing method therefor, and display device

Abstract

A display substrate and a manufacturing method therefor, and a display device. The display substrate comprises a base (101), a driving circuit layer (102), and a light-emitting structure layer (105). The driving circuit layer (102) comprises at least one pixel driving circuit, the at least one pixel driving circuit comprises at least one transistor, the transistor comprises at least an active layer (206), and the driving circuit layer (102) further comprises at least one insulating layer located on the side of the active layer (206) away from the base (101). The light-emitting structure layer (105) comprises at least one light-emitting device. The display substrate further comprises a light-shielding structure (108), the light-shielding structure (108) is at least partially located in a hole formed in the at least one insulating layer, and the light-shielding structure (108) is configured to block the light emitted by the at least one light-emitting device from irradiating to a channel region (208) of the at least one active layer (206).

Description

Display substrate and manufacturing method thereof, and display device Technical Field

[0001] This article relates to but is not limited to the field of display technology, and in particular to a display substrate and a preparation method thereof, and a display device. Background Art

[0002] Organic Light-Emitting Diode (OLED) panels are active light-emitting display devices with the advantages of self-luminescence, wide viewing angle, high contrast, full-color display, light weight, thin thickness, low power consumption, high response speed, and flexible display. They are the display devices with the greatest development potential.

[0003] Summary of the Invention

[0004] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0005] Embodiments of the present disclosure provide a display substrate, a method for manufacturing the same, and a display device.

[0006] In one aspect, embodiments of the present disclosure provide a display substrate. The display substrate includes a base, a driving circuit layer located on one side of the base, and a light-emitting structure layer located on a side of the driving circuit layer away from the base. The driving circuit layer includes at least one pixel driving circuit, which includes at least one transistor. The transistor includes at least an active layer, and the driving circuit layer further includes at least one insulating layer located on a side of the active layer away from the base. The light-emitting structure layer includes at least one light-emitting device.

[0007] The display substrate further includes a light-shielding structure, at least part of which is located in an opening provided in the at least one insulating layer, and the light-shielding structure is configured to block light emitted by at least one of the light-emitting devices from irradiating a channel region of at least one of the active layers.

[0008] In an exemplary embodiment, the active layer further includes a first region and a second region located on opposite sides of the channel region; the light shielding structure is located between the active layer and the light emitting structure layer;

[0009] The shading structure includes at least one of a first shading portion and a second shading portion, wherein the orthographic projection of the first shading portion on the display substrate is located within the orthographic projection of the first area on the display substrate, and the orthographic projection of the second shading portion on the display substrate is located within the orthographic projection of the second area on the display substrate.

[0010] In an exemplary embodiment, the at least one insulating layer is provided with at least one opening, the at least one opening including at least one of a first opening and a second opening; an orthographic projection of the first opening on the display substrate is located within an orthographic projection of the first area on the display substrate, and an orthographic projection of the second opening on the display substrate is located within an orthographic projection of the second area on the display substrate;

[0011] Wherein, at least a portion of the first light-shielding portion is located within the first opening, and at least a portion of the second light-shielding portion is located within the second opening.

[0012] In an exemplary embodiment, a side of the first light shielding portion close to the active layer contacts the first region, and a side of the first light shielding portion away from the active layer is flush with a side of the at least one insulating layer away from the active layer.

[0013] In an exemplary embodiment, a side of the second light shielding portion close to the active layer contacts the second region, and a side of the second light shielding portion away from the active layer is flush with a side of the at least one insulating layer away from the active layer.

[0014] In an exemplary embodiment, the display substrate further includes a color filter structure layer, which is located between the driving circuit layer and the light-emitting structure layer; the color filter structure layer includes a light-shielding layer and a color filter; wherein the light-shielding layer and the color filter are arranged on the same layer.

[0015] In an exemplary embodiment, the light shielding layer includes a black matrix, and at least a portion of the light shielding structure and the black matrix are connected to each other as an integral structure.

[0016] In an exemplary embodiment, two adjacent color filters partially overlap to form an overlapping region, and in a direction perpendicular to the plane of the display substrate, the overlapping region is located between two adjacent light-emitting devices.

[0017] In an exemplary embodiment, the light-emitting device includes a first electrode, an organic light-emitting layer, and a second electrode that are stacked; the first electrode is closer to the substrate than the second electrode;

[0018] The first electrode is connected to the active layer via the connecting electrode, and a portion of the connecting electrode is reused as at least a portion of the light shielding structure.

[0019] In an exemplary embodiment, the connecting electrode includes a first connecting electrode and a second connecting electrode stacked together, and the first connecting electrode is closer to the substrate than the second connecting electrode; a first end of the first connecting electrode is connected to the active layer, a second end of the first connecting electrode is connected to the second connecting electrode, and the second connecting electrode is connected to the first electrode;

[0020] Part of the first connecting electrode and the second connecting electrode is reused as at least part of the light shielding structure.

[0021] In an exemplary embodiment, the connecting electrode includes a first connecting electrode and a second connecting electrode stacked together, and the first connecting electrode is closer to the substrate than the second connecting electrode; a first end of the first connecting electrode is connected to the active layer, a second end of the first connecting electrode is connected to the second connecting electrode, and the second connecting electrode is connected to the first electrode;

[0022] The first connecting electrode is reused as at least a part of the light-shielding structure.

[0023] In an exemplary embodiment, the second connecting electrode and the first electrode are connected to each other as an integral structure.

[0024] In an exemplary embodiment, the light-emitting device includes a first electrode, an organic light-emitting layer, and a second electrode arranged in a stacked manner; the first electrode is closer to the substrate than the second electrode; the light-emitting device further includes a pixel definition layer, the pixel definition layer having a pixel opening, the pixel opening exposing at least a portion of a surface of the first electrode;

[0025] In which, at least part of the shading structure and the pixel definition layer are an integrated structure interconnected; or, at least part of the shading structure and the organic light-emitting layer are an integrated structure interconnected; or, at least part of the shading structure and the second electrode are an integrated structure interconnected.

[0026] In an exemplary embodiment, the light-shielding structure includes a light-shielding block; the driving circuit layer includes a first conductive layer located on one side of the substrate and a semiconductor layer located on a side of the first conductive layer away from the substrate; the first conductive layer includes at least one light-shielding block, and the semiconductor layer includes at least one active layer, and the orthographic projection of at least one light-shielding block on the display substrate at least partially overlaps with the orthographic projection of the channel region of at least one active layer on the display substrate.

[0027] In an exemplary embodiment, an orthographic projection of the light shielding block on the display substrate includes an orthographic projection of a channel region of the active layer on the display substrate.

[0028] In an exemplary embodiment, the driving circuit layer includes a first conductive layer located on one side of the substrate, a semiconductor layer located on a side of the first conductive layer away from the substrate, and a second conductive layer located on a side of the semiconductor layer away from the substrate; the semiconductor layer includes at least one active layer, and the second conductive layer includes a gate of the transistor;

[0029] The orthographic projection of the gate on the display substrate at least partially overlaps with the orthographic projection of the channel region of the active layer on the display substrate.

[0030] In an exemplary embodiment, an orthographic projection of the gate on the display substrate includes an orthographic projection of a channel region of the active layer on the display substrate.

[0031] In an exemplary embodiment, the light-shielding structure includes a light-shielding block, the first conductive layer includes at least one of the light-shielding blocks, and the gate electrode's orthographic projection on the display substrate, the active layer's channel region's orthographic projection on the display substrate, and the light-shielding block's orthographic projection on the display substrate are at least partially overlapped.

[0032] On the other hand, an embodiment of the present disclosure provides a display device, which includes the display substrate described in any of the above embodiments.

[0033] On the other hand, an embodiment of the present disclosure provides a method for preparing a display substrate, which is used to prepare the display substrate described in any of the above embodiments.

[0034] The display substrate provided in the embodiment of the present disclosure can use the provided shading structure to block the light emitted from the light-emitting device to the channel region of the active layer, thereby improving the problem of negative drift of the transistor threshold voltage, avoiding afterimages on the display substrate, and improving the yield rate of the display product.

[0035] Still other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.

[0036] Summary of the Figures

[0037] The accompanying drawings are intended to provide a further understanding of the technical solutions of the present disclosure and constitute part of the specification. Together with the embodiments of the present disclosure, they are used to explain the technical solutions of the present disclosure and do not constitute a limitation of the technical solutions of the present disclosure. The shapes and sizes of one or more components in the accompanying drawings do not reflect the actual scale and are intended only to illustrate the contents of the present disclosure.

[0038] FIG1 is a schematic diagram of a display product showing a line afterimage on its display screen;

[0039] FIG2 is a schematic structural diagram of a display device according to an embodiment of the present disclosure;

[0040] FIG3 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present disclosure;

[0041] FIG4 is a schematic cross-sectional view of a display substrate according to an embodiment of the present disclosure;

[0042] 5A to 5M are schematic diagrams of a process for preparing a display substrate according to an embodiment of the present disclosure;

[0043] FIG6 is a schematic cross-sectional view of a display substrate according to another embodiment of the present disclosure;

[0044] FIG7 is a schematic cross-sectional view of a display substrate according to another embodiment of the present disclosure;

[0045] FIG8 is a schematic cross-sectional view of a display substrate according to another embodiment of the present disclosure;

[0046] FIG9 is a schematic cross-sectional view of a display substrate according to another embodiment of the present disclosure;

[0047] 10A to 10F are schematic diagrams of a process for preparing a display substrate according to another embodiment of the present disclosure.

[0048] Figure numerals: 101-substrate, 102-driving circuit layer, 201-first insulating layer, 202-second insulating layer, 203-third insulating layer, 204-fourth insulating layer, 205-light-shielding block, 206-active layer, 207-gate, 208-channel region, 209-first region, 210-second region, 211-first connecting electrode, 212-second connecting electrode; 103-color filter structure layer, 301-black matrix, 302-color filter, 104-first encapsulation layer, 105-light-emitting structure layer, 501-anode, 502-organic light-emitting layer, 503-cathode, 504-pixel definition layer, 504-1 pixel opening, 106-second encapsulation layer, 107-cover layer, 108-light-shielding structure, 801-first light-shielding portion, 802-second light-shielding portion.

[0049] Details

[0050] The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The embodiments can be implemented in a variety of different forms. A person skilled in the art can easily understand that the method and content can be transformed into one or more forms without departing from the purpose and scope of the present disclosure. Therefore, the present disclosure should not be interpreted as being limited to the contents described in the following embodiments. In the absence of conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other in any way.

[0051] In the drawings, the size of one or more components, layer thicknesses, or regions may be exaggerated for clarity. Therefore, one embodiment of the present disclosure is not necessarily limited to these dimensions, and the shapes and sizes of one or more components in the drawings do not reflect true proportions. Furthermore, the drawings schematically illustrate idealized examples, and one embodiment of the present disclosure is not limited to the shapes or values ​​shown in the drawings.

[0052] The ordinal numbers such as "first," "second," and "third" in this disclosure are provided to avoid confusion among constituent elements, and are not intended to limit the number. The "plurality" in this disclosure includes two or more.

[0053] In this disclosure, for convenience, words and phrases indicating orientation or positional relationships, such as "middle," "upper," "lower," "front," "back," "vertical," "horizontal," "top," "bottom," "inside," and "outside," are used to illustrate the positional relationships of constituent elements with reference to the accompanying drawings. This is merely for the convenience of describing this specification and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, it should not be understood as a limitation of this disclosure. The positional relationships of constituent elements are appropriately changed according to the direction in which the constituent elements are described. Therefore, the words and phrases are not limited to those described in the specification and can be appropriately replaced according to the circumstances.

[0054] In this disclosure, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be interpreted broadly. For example, they can refer to fixed, removable, or integral connections; mechanical or electrical connections; direct connections, indirect connections through intermediaries, or internal communication between two components. Those skilled in the art will understand the meaning of these terms in this disclosure based on the specific circumstances.

[0055] In this disclosure, "electrically connected" includes components connected together via an element having some electrical function. There are no particular limitations on the "element having some electrical function" as long as it enables transmission of electrical signals between the connected components. Examples of "element having some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having one or more functions.

[0056] In this disclosure, a transistor refers to a device comprising at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between a drain electrode (drain electrode terminal, drain region, or drain) and a source electrode (source electrode terminal, source region, or source), and current can flow through the drain electrode, the channel region, and the source electrode. In this disclosure, the channel region refers to the region through which current primarily flows.

[0057] In the present disclosure, the first electrode may be a drain electrode and the second electrode may be a source electrode, or vice versa. The functions of "source electrode" and "drain electrode" may be interchanged when using transistors with opposite polarity or when the direction of current changes during circuit operation. Therefore, in the present disclosure, "source electrode" and "drain electrode" may be interchanged.

[0058] In this disclosure, "parallel" refers to a state where the angle formed by two straight lines is greater than -10° and less than 10°, and thus includes a state where the angle is greater than -5° and less than 5°. Furthermore, "perpendicular" refers to a state where the angle formed by two straight lines is greater than 80° and less than 100°, and thus includes a state where the angle is greater than 85° and less than 95°.

[0059] In this disclosure, the terms "film" and "layer" may be interchanged. For example, "conductive layer" may be replaced with "conductive film." Similarly, "insulating film" may be replaced with "insulating layer."

[0060] In the present disclosure, “about” and “approximately” refer to values ​​that are not strictly defined but allow for process and measurement errors.

[0061] The triangles, rectangles, trapezoids, pentagons or hexagons in the present disclosure are not in the strict sense, but may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0062] One of the current development trends in large-size display products is increasing brightness, particularly peak brightness. OLED panels consist of multiple light-emitting units, each of which includes an organic light-emitting layer. Driven by voltage, the organic light-emitting layer emits light of a corresponding color. When a display displays the same image for extended periods, burn-in, also known as image retention, can occur. Image retention is typically categorized as surface image retention and line image retention. Therefore, image retention testing is a crucial evaluation factor during product development.

[0063] The inventors of this application discovered during the afterimage test of a display product that the display product would have a partial brightening phenomenon on the display screen as shown in Figure 1, which can also be called line afterimage. In the actual production process, in order to improve the yield rate of the display product, it is necessary to analyze the causes of the line afterimage and to improve or completely solve the line afterimage problem. Based on the analysis of the image, it is known that because the light emitted by the light-emitting unit of the display product partially illuminates the thin-film transistor, the threshold voltage (Vth) of the thin-film transistor has a negative drift, which causes the line afterimage phenomenon on the display screen, resulting in a low yield rate of the display product.

[0064] Therefore, an embodiment of the present disclosure provides a display substrate. The display substrate includes a base, a driving circuit layer located on one side of the base, and a light-emitting structure layer located on a side of the driving circuit layer away from the base; the driving circuit layer includes at least one pixel driving circuit, the at least one pixel driving circuit includes at least one transistor, the transistor includes at least an active layer, and the driving circuit layer also includes at least one insulating layer located on a side of the active layer away from the base; the light-emitting structure layer includes at least one light-emitting device; the display substrate also includes a light-shielding structure, at least a portion of the light-shielding structure is located within an opening provided in the at least one insulating layer, and the light-shielding structure is configured to block light emitted by at least one light-emitting device from radiating to a channel region of at least one active layer.

[0065] The display substrate provided in the embodiment of the present disclosure can use the provided shading structure to block the light emitted from the light-emitting device to the channel region of the active layer, which can improve or solve the problem of negative drift of the transistor threshold voltage, avoid the problem of afterimage in the display substrate, and improve the yield rate of the display product.

[0066] Figure 2 is a structural schematic diagram of a display device according to an embodiment of the present disclosure. As shown in Figure 2, the OLED display device may include a timing controller, a data driver, a scan driver, and a pixel array. The timing controller is connected to the data driver and the scan driver, respectively. The data driver is connected to a plurality of data signal lines (D1 to Dn), respectively, and the scan driver is connected to a plurality of scan signal lines (S1 to Sm), respectively. The pixel array may include a plurality of sub-pixels Pxij, each sub-pixel Pxij may be connected to a corresponding data signal line and a corresponding scan signal line, and i and j may be natural numbers. At least one sub-pixel Pxij may include at least a circuit unit and a display unit, the circuit unit may include at least a pixel driving circuit, the pixel driving circuit is connected to the scan signal line and the data signal line, respectively, the display unit may include at least a light-emitting device, and the light-emitting device is connected to the pixel driving circuit of the circuit unit. The sub-pixel Pxij may refer to a sub-pixel whose pixel driving circuit is connected to the i-th scan signal line and to the j-th data signal line.

[0067] In one exemplary embodiment, the timing controller may provide grayscale values ​​and control signals suitable for the data driver's specifications to the data driver, and may provide clock signals, scan start signals, and other signals suitable for the scan driver's specifications to the scan driver. The data driver may use the grayscale values ​​and control signals received from the timing controller to generate data voltages to be supplied to the data signal lines D1, D2, D3, ..., and Dn. For example, the data driver may use the clock signal to sample the grayscale values ​​and apply data voltages corresponding to the grayscale values ​​to the data signal lines D1 to Dn on a pixel row basis, where n may be a natural number. The scan driver may generate scan signals to be supplied to the scan signal lines S1, S2, S3, ..., and Sm by receiving the clock signal, scan start signal, and other signals from the timing controller. For example, the scan driver may sequentially supply scan signals having on-level pulses to the scan signal lines S1 to Sm. For example, the scan driver may be configured as a shift register and may generate scan signals by sequentially transmitting the scan start signals provided in the form of on-level pulses to the next stage circuit under the control of the clock signal. m may be a natural number. In example embodiments, a pixel array may be provided on a display substrate.

[0068] FIG3 is a schematic diagram of a planar structure of a display substrate according to an embodiment of the present disclosure. As shown in FIG3 , the display substrate may include a plurality of pixel units P arranged in a matrix. At least one pixel unit P may include a plurality of sub-pixels. For example, at least one of the plurality of pixel units P may include a first sub-pixel P1 emitting a first color light, a second sub-pixel P2 emitting a second color light, a third sub-pixel P3 emitting a third color light, and a fourth sub-pixel P4 emitting a fourth color light. Each of the four sub-pixels may include a circuit unit and a light-emitting device. The circuit unit may include a pixel driving circuit, which is respectively connected to a scan signal line and a data signal line. The pixel driving circuit is configured to receive a data voltage transmitted by the data signal line under the control of the scan signal line and output a corresponding current to the light-emitting device. The light-emitting device in each pixel unit is respectively connected to the pixel driving circuit of the sub-pixel in which it is located. The light-emitting device is configured to emit light of a corresponding brightness in response to the current output by the pixel driving circuit of the sub-pixel in which it is located.

[0069] In an exemplary embodiment, the first sub-pixel P1 may be a red sub-pixel (R) that emits red light, the second sub-pixel P2 may be a white sub-pixel (W) that emits white light, the third sub-pixel P3 may be a blue sub-pixel (B) that emits blue light, and the fourth sub-pixel P4 may be a green sub-pixel (G) that emits green light.

[0070] In one exemplary embodiment, the shape of the sub-pixels may be rectangular, diamond, pentagonal, or hexagonal. In one exemplary embodiment, four sub-pixels may be arranged horizontally in parallel to form a RWBG pixel arrangement. In another exemplary embodiment, the four sub-pixels may be arranged in a square, diamond, or vertically parallel arrangement, which is not limited in this disclosure.

[0071] FIG4 is a schematic diagram of the cross-sectional structure of a display substrate according to an embodiment of the present disclosure. As shown in FIG4 , the structure of four sub-pixels of the display substrate is illustrated. As shown in FIG4 , on a plane perpendicular to the display substrate, the display substrate includes a substrate 101, a driving circuit layer 102 arranged on one side of the substrate 101, a color filter structure layer 103 arranged on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 arranged on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 arranged on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 arranged on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 arranged on the side of the second encapsulation layer 106 away from the substrate 101. The driving circuit layer 102 may include multiple circuit units, and the light-emitting structure layer 105 may include multiple light-emitting devices. In some possible implementations, the display substrate may include other film layers, which are not limited in the present disclosure.

[0072] In an exemplary embodiment, the substrate 101 may be a rigid substrate, a flexible substrate, or a silicon wafer. In an exemplary embodiment, the rigid substrate may be made of materials such as glass or quartz, and the flexible substrate may be made of materials such as polyimide (PI) or polyethylene terephthalate (PET). The flexible substrate may be a single-layer structure or a laminated structure consisting of an inorganic material layer and a flexible material layer, however, the present disclosure is not limited thereto.

[0073] In an exemplary embodiment, the driving circuit layer 102 of each sub-pixel may include at least one circuit unit. The circuit unit may include at least a pixel driving circuit composed of at least one transistor. In some examples, the pixel driving circuit may also include at least one storage capacitor. For example, the pixel driving circuit may be a 3T1C, 4T1C, 5T1C, 5T2C, 6T1C, 7T1C, 8T1C or 9T2C structure, where the number before T represents the number of transistors and the number before C represents the number of storage capacitors. As shown in Figure 4, the pixel driving circuit of the exemplary embodiment of the present disclosure only takes one transistor as an example. However, the embodiment of the present disclosure does not limit the structural form of the pixel driving circuit.

[0074] In an exemplary embodiment, as shown in FIG4 , the driving circuit layer 102 of each sub-pixel may include a first conductive layer disposed on a side of the substrate 101, a first insulating layer 201 disposed on a side of the first conductive layer away from the substrate 101, a semiconductor layer disposed on a side of the first insulating layer 201 away from the substrate 101, a second insulating layer 202 disposed on a side of the semiconductor layer away from the substrate 101, a second conductive layer disposed on a side of the second insulating layer 202 away from the substrate 101, a third insulating layer 203 disposed on a side of the second conductive layer away from the substrate 101, a third conductive layer disposed on a side of the third insulating layer 203 away from the substrate 101, and a fourth insulating layer 204 disposed on a side of the third conductive layer away from the substrate 101. In the embodiment of the present disclosure, the first insulating layer 201 may also be referred to as a buffer layer, the second insulating layer 202 may also be referred to as a gate insulating (GI) layer, the third insulating layer 203 may also be referred to as an interlayer insulating (ILD) layer, and the fourth insulating layer 204 may also be referred to as a planarization (PLN) layer. As shown in FIG4 , the first conductive layer may include a single layer or multiple layers, for example, a transparent ITO layer and a metal layer, wherein the metal layer can serve as a signal trace and a light shield 205 for the transistor. The semiconductor layer may include an active layer 206 for the transistor. The second conductive layer may include a gate 207 for the transistor. The third conductive layer may include a first connecting electrode 211, which is configured to connect the light-emitting device to the pixel driving circuit. As shown in FIG4 , the second end of the first connecting electrode 211 may be connected to the anode of the light-emitting device, and the first end of the first connecting electrode 211 may be connected to the conductive active layer 206 of the transistor.

[0075] In an exemplary embodiment, the first conductive layer, the second conductive layer, and the third conductive layer may be made of a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Alternatively, the first conductive layer, the second conductive layer, and the third conductive layer may be made of an alloy of metal materials such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), such as an aluminum-neodymium alloy (AlNd) or a molybdenum-niobium alloy (MoNb). The first conductive layer, the second conductive layer, and the third conductive layer may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0076] In an exemplary embodiment, the materials of the first insulating layer, the second insulating layer, and the third insulating layer may be inorganic materials, and the inorganic materials may include any one or more of silicon oxynitride (SiOxNy), silicon nitride (SiNx), and silicon oxide (SiOx). The material of the fourth insulating layer may be an organic material, and the organic material may include one of polymers such as polyimide (PI), polyacrylate, polyphenylene sulfide, polyarylate, cellulose acetate propionate, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyethersulfone resin (PES), polycarbonate (PC), polyetherimide (PEI), cycloolefin polymer (COP), silicone resin, polyarylate (PAR), or fiberglass reinforced plastic (FRP), or a mixture of multiple polymers.

[0077] In some possible exemplary embodiments, a passivation (PVX) layer may further be included between the third insulating layer and the fourth insulating layer. The material of the passivation layer may be an inorganic material. The inorganic material may include any one or more of silicon oxynitride (SiOxNy), silicon nitride (SiNx), and silicon oxide (SiOx).

[0078] In an exemplary embodiment, the first conductive layer may further include a data signal line, which may be provided on the same layer as the light shielding block 205 , thereby simplifying the preparation process of the display substrate, reducing the number of film layers of the display substrate, and lowering the preparation cost of the display substrate.

[0079] In one exemplary embodiment, the first conductive layer may further include a first plate of a storage capacitor, and the second conductive layer may further include a second plate of a storage capacitor, wherein the first plate and the second plate at least partially overlap in their orthographic projections on the display substrate. Alternatively, the second conductive layer may further include the first plate of a storage capacitor, and the third conductive layer may further include the second plate of a storage capacitor, etc.

[0080] In an exemplary embodiment, the material of the semiconductor layer may include an oxide semiconductor material. For example, the semiconductor layer may be made of one or more materials such as amorphous indium gallium zinc oxide (a-IGZO), zinc oxynitride (ZnON), and indium zinc tin oxide (IZTO). As shown in FIG4 , the orthographic projection of the active layer 206 on the substrate 101 and the orthographic projection of the light shielding block 205 on the substrate 101 may at least partially overlap. For example, the orthographic projection of the active layer 206 on the substrate 101 may include the orthographic projection of the light shielding block 205 on the substrate 101.

[0081] In one exemplary embodiment, as shown in FIG4 , the active layer 206 may include a channel region 208 and a first region 209 and a second region 210 located on opposite sides of the channel region 208. For example, during the process of manufacturing the display substrate, a portion of the active layer 206 may be subjected to a conductorization process to form the first region 209 and the second region 210, respectively. The first region 209 of the active layer 206 may serve as a first electrode of a transistor, which may be a source electrode or a drain electrode, and the second region 210 of the active layer 206 may serve as a second electrode of the transistor. However, the presently disclosed embodiments do not limit the conductorization process for the semiconductor layer.

[0082] In one exemplary embodiment, as shown in FIG4 , the orthographic projections of the channel region 208 of the active layer 206 and the light shielding block 205 on the substrate 101 may at least partially overlap. For example, the orthographic projection of the light shielding block 205 on the substrate 101 may include the orthographic projection of the channel region 208 on the substrate 101. The light shielding block 205 can shield the channel region 208 of the active layer 206 of the transistor, preventing light from entering the transistor from one side of the substrate, thereby affecting transistor characteristics and reducing the yield rate of the display product.

[0083] In an exemplary embodiment, as shown in FIG4 , the first area 209 and the second area 210 may at least partially overlap with the orthographic projection of the light shielding block 205 on the substrate 101. For example, the orthographic projection of the first area 209 on the substrate 101 may be located within the orthographic projection of the light shielding block 205 on the substrate 101. For example, the orthographic projection of the second area 210 on the substrate 101 may be located within the orthographic projection of the light shielding block 205 on the substrate 101.

[0084] In an exemplary embodiment, as shown in FIG4 , the orthographic projection of the gate 207 on the substrate 101 may overlap with the orthographic projections of the active layer 206 of the semiconductor layer and the light shielding block 205 on the substrate 101. For example, the orthographic projection of the gate 207 on the substrate 101 may include the orthographic projection of the channel region 208 of the active layer 206 on the substrate 101. Alternatively, the orthographic projection of the gate 207 on the substrate 101 may overlap with the orthographic projection of the channel region 208 of the active layer 206 on the substrate 101. By setting the relationship between the orthographic projection of the gate 207 on the substrate 101 and the orthographic projection of the channel region 208 on the substrate 101, the gate 207 can be used to block at least part of the light directed to the channel region 208, thereby improving the reliability of the active layer and extending the service life of the display substrate.

[0085] In one exemplary embodiment, the second conductive layer may further include scan signal lines. The scan signal lines and the transistor gate 207 may be provided on the same layer, simplifying the display substrate's film structure and reducing the display substrate's manufacturing cost. Alternatively, the scan signal lines and the gate 207 may be interconnected and integrated. Alternatively, the scan signal lines may be extended linearly, and the gate 207 may protrude from the scan signal lines toward the side in which the scan signal lines extend.

[0086] In an exemplary embodiment, the color film structure layer 103 may include a light shielding layer and a color filter (CF) 302, wherein the light shielding layer may include a black matrix (BM) 301, or a portion where adjacent color filters (CF) 302 overlap. The light shielding layer can avoid crosstalk between light of different colors between adjacent sub-pixels. In an embodiment of the present disclosure, taking the light shielding layer including the black matrix (BM) 301 as an example, the black matrix 301 can be arranged around the color filter 302, and the color filter 302 is respectively arranged in the red sub-pixel, the white sub-pixel, the blue sub-pixel and the green sub-pixel to filter the white light emitted by the light-emitting device into red (R) light, white (W) light, blue (B) light and green (G) light, and the black matrix 301 can be located between adjacent color filters 302. For example, the black matrix (BM) 301 and the color filter (CF) 302 can be arranged in the same layer, which can reduce the thickness of the display substrate.

[0087] In one exemplary embodiment, two adjacent color filters 302 partially overlap to form an overlapping region. This overlapping region is located between two adjacent light-emitting devices in a direction perpendicular to the plane of the display substrate. This overlapping region serves as a light-shielding layer, simplifying the overall display substrate manufacturing process and reducing manufacturing costs.

[0088] In one exemplary embodiment, as shown in FIG4 , at least one sub-pixel may include a light shielding structure 108. The light shielding structure 108 is configured to block light emitted by at least one light-emitting device from reaching the transistor. As shown in FIG4 , four sub-pixels are each provided with a light shielding structure 108 as an example.

[0089] In an exemplary embodiment, as shown in FIG4 , the light-shielding structure 108 may include at least one of a first light-shielding portion 801 and a second light-shielding portion 802. The first light-shielding portion 801 may be configured to block light emitted by the light-emitting device included in the sub-pixel where the light-shielding structure 108 is located from irradiating the transistor included in the sub-pixel where the light-shielding structure 108 is located. The second light-shielding portion 802 may be configured to block light emitted by the light-emitting device included in the sub-pixel adjacent to the sub-pixel where the light-shielding structure 108 is located from irradiating the transistor included in the sub-pixel where the light-shielding structure 108 is located. As shown in FIG4 , taking the fourth sub-pixel P4 as an example, the first light-shielding portion 801 may block light emitted by the light-emitting device included in the fourth sub-pixel P4 from irradiating the transistor included in the fourth sub-pixel P4. The second light-shielding portion 802 may block light emitted by the light-emitting device included in the third sub-pixel P3 from irradiating the transistor included in the fourth sub-pixel P4.

[0090] In an exemplary embodiment, as shown in FIG4 , at least a portion of the light-shielding structure 108 and the black matrix 301 may be an integrated structure connected to each other, which can simplify the film structure of the display substrate, simplify the preparation process of the display substrate, and reduce the preparation cost of the display substrate. For example, the first light-shielding portion 801 and the black matrix 301 may be an integrated structure connected to each other. Alternatively, the second light-shielding portion 802 and the black matrix 301 may be an integrated structure connected to each other. Alternatively, the light-shielding structure 108 and the black matrix 301 may be an integrated structure connected to each other. In a possible exemplary embodiment, the light-shielding structure 108 and the black matrix 301 may be prepared by different processes, and the material of the light-shielding structure 108 and the material of the black matrix 301 may be different or the same.

[0091] In an exemplary embodiment, as shown in FIG4 , the orthographic projection of the black matrix 301 on the display substrate may include the orthographic projection of the shading structure 108 on the display substrate, which can avoid the shading structure occupying the area of ​​the sub-pixel light-emitting region and improve the aperture ratio of the display substrate.

[0092] In an exemplary embodiment, as shown in FIG4 , the fourth insulating layer 204 may be provided with at least one first opening K1. The first opening K1 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the first region 209. At least a portion of the first light shielding portion 801 may be located within the first opening K1. For example, the first opening K1 may be a rectangular hole, a circular hole, a hexagonal hole, or the like.

[0093] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one first opening K1, the first opening K1 does not penetrate the fourth insulating layer 204, or the first opening K1 penetrates the fourth insulating layer 204 and exposes a portion of the surface of the third insulating layer 203 away from the substrate 101, at least a portion of the first light-shielding portion 801 may be located within the first opening K1, and the first light-shielding portion 801 may be in contact with a portion of the surface of the third insulating layer 203 away from the substrate 101.

[0094] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one first opening K1, the first opening K1 passes through the fourth insulating layer 204, and the first opening K1 does not pass through the third insulating layer 203, or the first opening K1 passes through the third insulating layer 203 and exposes a portion of the surface of the second insulating layer 202 away from the substrate 101, at least a portion of the first light-shielding portion 801 may be located within the first opening K1, and the first light-shielding portion 801 may be in contact with a portion of the surface of the second insulating layer 202 away from the substrate 101.

[0095] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one first opening K1, the first opening K1 passes through the fourth insulating layer 204 and the third insulating layer 203, and does not pass through the second insulating layer 202, and at least a portion of the first light-shielding portion 801 may be located within the first opening K1.

[0096] In one exemplary embodiment, as shown in FIG4 , the fourth insulating layer 204 may have at least one second opening K2. The second opening K2 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the second region 210. At least a portion of the second light shielding portion 802 may be located within the second opening K2. For example, the second opening K2 may be a rectangular hole, a circular hole, or a hexagonal hole. The shape of the second opening K2 may be the same as or different from that of the first opening K1.

[0097] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one second opening K2, the second opening K2 does not penetrate the fourth insulating layer 204, or the second opening K2 penetrates the fourth insulating layer 204 and exposes a portion of the surface of the third insulating layer 203 away from the substrate 101, at least a portion of the second light-shielding portion 802 may be located within the second opening K2, and the second light-shielding portion 802 may be in contact with a portion of the surface of the third insulating layer 203 away from the substrate 101.

[0098] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one second opening K2, the second opening K2 passes through the fourth insulating layer 204, and the second opening K2 does not pass through the third insulating layer 203, or the second opening K2 passes through the third insulating layer 203 and exposes a portion of the surface of the second insulating layer 202 away from the substrate 101, at least a portion of the second light-shielding portion 802 may be located within the second opening K2, and the second light-shielding portion 802 may be in contact with a portion of the surface of the second insulating layer 202 away from the substrate 101.

[0099] In some possible exemplary embodiments, the fourth insulating layer 204 may be provided with at least one second opening K2, the second opening K2 may pass through the fourth insulating layer 204 and the third insulating layer 203, and does not pass through the second insulating layer 202, and at least a portion of the second light-shielding portion 802 may be located within the second opening K2.

[0100] In an exemplary embodiment, as shown in FIG4 , the first encapsulation layer 104 may be a thin film encapsulation (TFE) to ensure that external moisture cannot enter the driving circuit layer 102. The first encapsulation layer 104 may be a single film layer structure or a composite film layer structure of two or more layers. In some examples, the first encapsulation layer 104 may include a stacked first encapsulation sublayer, a second encapsulation sublayer, and a third encapsulation sublayer. The first encapsulation sublayer and the third encapsulation sublayer may be made of inorganic materials, the second encapsulation sublayer may be made of organic materials, and the second encapsulation sublayer may be disposed between the first encapsulation sublayer and the third encapsulation sublayer.

[0101] In an exemplary embodiment, as shown in FIG4 , the light-emitting structure layer 105 may include a plurality of light-emitting devices, and the light-emitting devices may be organic light-emitting diodes (OLEDs). At least one light-emitting device may include a first electrode, an organic light-emitting layer 502, and a second electrode that are stacked. The first electrode may be an anode or a cathode. In the embodiment of the present disclosure, the first electrode is an anode and the second electrode is a cathode. The anode 501 may be connected to the first electrode (first region 209) of the transistor through a connecting electrode. The connecting electrode may include a second connecting electrode 212 and a first connecting electrode 211. The organic light-emitting layer 502 is connected to the anode 501, and the cathode 503 is connected to the organic light-emitting layer 502. The cathode 503 may be connected to a power line. The organic light-emitting layer 502 may emit light under the drive of the anode 501 and the cathode 503.

[0102] In one exemplary embodiment, the organic light-emitting layer 502 may include a light-emitting layer (EML), and any one or more of the following: a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL). As shown in FIG4 , for a light-emitting device that emits white light, the organic light-emitting layers of all sub-pixels may be a common layer connected together.

[0103] In an exemplary embodiment, as shown in FIG. 4 , the second connection electrode 212 and the anode 501 may be an integrated structure connected to each other, which can simplify the film structure of the display substrate and reduce the manufacturing cost of the display substrate.

[0104] In an exemplary embodiment, as shown in FIG4 , the orthographic projection of the black matrix 301 on the display substrate may include the orthographic projection of the second connection electrode 212 and the first connection electrode 211 on the display substrate, which can improve the area utilization of the display substrate and the aperture ratio of the display substrate.

[0105] In an exemplary embodiment, the material of the anode 501 can be a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), which can avoid the loss of light emitted by the light-emitting device by the anode and improve the light utilization efficiency of the display substrate.

[0106] In an exemplary embodiment, as shown in FIG4 , the light-emitting device may further include a pixel definition layer 504. The pixel definition layer 504 may be provided with a pixel opening 504-1, which exposes at least a portion of the surface of the anode 501. The pixel definition layer 504 may be made of polyimide, acrylic, or polyethylene terephthalate, among others.

[0107] In some possible exemplary embodiments, at least a portion of the light shielding structure 108 and the pixel definition layer 504 may be interconnected as an integral structure. For example, the second light shielding portion 802 and the pixel definition layer 504 may be interconnected as an integral structure. Alternatively, at least a portion of the light shielding structure 108 and the organic light emitting layer 502 may be interconnected as an integral structure. Alternatively, at least a portion of the light shielding structure 108 and the cathode 503 may be interconnected as an integral structure.

[0108] In one exemplary embodiment, the shapes and areas of the pixel openings of different sub-pixels may be different.

[0109] In an exemplary embodiment, the shapes of the pixel openings of the four sub-pixels may be the same or different, and the areas of the pixel openings of the four sub-pixels may be the same or different.

[0110] In an exemplary embodiment, the shape of the pixel opening in the display substrate may include any one or more of the following: triangle, rectangle, trapezoid, parallelogram, pentagon, hexagon, circle, and ellipse.

[0111] In an exemplary embodiment, the second encapsulation layer 106 may be a thin film encapsulation (TFE) to ensure that external moisture cannot enter the light-emitting structure layer 105. The second encapsulation layer 106 may be a single film layer structure or a composite film layer structure of two or more layers. In some examples, the second encapsulation layer 106 may include a stacked fourth encapsulation sublayer, a fifth encapsulation sublayer, and a sixth encapsulation sublayer. The fourth and sixth encapsulation sublayers may be made of inorganic materials, the fifth encapsulation sublayer may be made of organic materials, and the fifth encapsulation sublayer may be disposed between the fourth and sixth encapsulation sublayers.

[0112] In an exemplary embodiment, the cover layer 107 may be made of glass, or a flexible plastic such as colorless polyimide.

[0113] The structure of the display substrate is illustrated below by way of an example of its preparation process. The "patterning process" referred to in the embodiments of the present disclosure includes processes such as coating photoresist, mask exposure, development, etching, and stripping photoresist for metal materials, inorganic materials, or transparent conductive materials, and processes such as coating organic materials, mask exposure, and development for organic materials. Deposition can be performed by any one or more of sputtering, evaporation, and chemical vapor deposition; coating can be performed by any one or more of spraying, spin coating, and inkjet printing; and etching can be performed by any one or more of dry etching and wet etching, which are not limited in this disclosure. A "thin film" refers to a layer of thin film produced by deposition, coating, or other processes on a substrate using a certain material. If the "thin film" does not require a patterning process during the entire production process, the "thin film" can also be referred to as a "layer." If the "thin film" requires a patterning process during the entire production process, it is referred to as a "thin film" before the patterning process and as a "layer" after the patterning process. The "layer" after the patterning process contains at least one "pattern." In the embodiments of the present disclosure, a "same-layer structure" refers to the same layer within the display substrate.

[0114] The manufacturing process of the display substrate may include the following steps. Taking the structure of the display substrate shown in FIG. 4 as an example, the manufacturing process of the display substrate is shown in FIG. 5A to FIG. 5M :

[0115] (11) Provide a substrate 101.

[0116] (12) Forming a first conductive layer pattern. Forming the first conductive layer pattern may include: depositing a first conductive film on one side of the substrate 101, and patterning the first conductive film through a patterning process to form a first conductive layer pattern disposed on one side of the substrate 101. As shown in FIG5A , the first conductive layer may include light shielding blocks 205 and data signal lines.

[0117] (13) Forming a semiconductor layer pattern. Forming the semiconductor layer pattern may include: sequentially depositing a first insulating film and a semiconductor film on the substrate 101 on which the aforementioned pattern is formed, patterning the semiconductor film through a patterning process to form a first insulating layer 201 disposed on one side of the first conductive layer, and a semiconductor layer pattern disposed on one side of the first insulating layer 201. As shown in FIG. 5B , the semiconductor layer may include an active layer 206 of a transistor.

[0118] Forming the semiconductor layer pattern may further include conducting a portion of the active layer 206 so as to form a first region 209 and a second region 210. For example, the first region 209 may be used as a first electrode of a transistor, and the second region 210 may be used as a second electrode of the transistor.

[0119] (14) forming a second conductive layer pattern. The forming of the second conductive layer pattern may include: sequentially depositing a second insulating film and a second conductive film on the substrate 101 on which the aforementioned pattern is formed, and patterning the second conductive film through a patterning process to form a second insulating film disposed on one side of the semiconductor layer and a second conductive layer pattern located on one side of the second insulating film. As shown in FIG5C , the second conductive layer may include a gate 207 of a transistor and a scanning signal line, etc.

[0120] (15) Forming a third insulating layer pattern. Forming the third insulating layer pattern may include: depositing a third insulating film on the substrate 101 on which the aforementioned pattern is formed, patterning the third insulating film and the second insulating film through a patterning process to form a second insulating layer pattern arranged on one side of the semiconductor layer and a third insulating layer pattern arranged on one side of the second conductive layer. As shown in FIG5D , the third insulating layer 203 may be provided with at least one third opening K3. The third opening K3 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the first region 209. The third opening K3 is configured so that the first connecting electrode formed subsequently is connected to the first region 209 of the transistor via the third opening. In one example, the orthographic projection of the second insulating layer 202 on the display substrate may include the orthographic projection of the substrate 101 on the display substrate. For example, the orthographic projection of the second insulating layer 202 on the display substrate overlaps with the orthographic projection of the substrate 101 on the display substrate. Alternatively, the orthographic projection of the second insulating layer 202 on the display substrate includes the orthographic projection of the active layer 206 on the display substrate, and the orthographic projection of the second insulating layer 202 on the display substrate is located within the range of the orthographic projection of the base 101 on the display substrate, and the orthographic projection of the second insulating layer 202 on the display substrate does not overlap with the orthographic projection of the base 101 on the display substrate.

[0121] (16) Forming a third conductive layer pattern. Forming the third conductive layer pattern may include: depositing a third conductive film on the substrate 101 having the aforementioned pattern formed thereon, and patterning the third conductive film through a patterning process to form a third conductive layer pattern disposed on one side of the third insulating layer 203. As shown in FIG5E , the third conductive layer may include a first connecting electrode 211. At least a portion of the first connecting electrode 211 may be located in the third opening K3, and the first connecting electrode 211 may be connected to the first region 209 via the third opening K3.

[0122] (17) Forming a fourth insulating layer pattern. Forming the fourth insulating layer pattern may include: depositing a fourth insulating film on the substrate 101 on which the aforementioned pattern is formed, and patterning the fourth insulating film through a patterning process to form a fourth insulating layer pattern located on one side of the third conductive layer, as shown in FIG5F . The fourth insulating layer 204 may include at least one of a first opening K1 and a second opening K2. The first opening K1 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the first region 209. The first opening K1 is configured so that at least a portion of the first light shielding portion to be formed subsequently is located within the first opening K1. The second opening K2 may penetrate the third insulating layer 203 and the second insulating layer 202 and expose a portion of the surface of the second region 210. The second opening K2 is configured so that at least a portion of the second light shielding portion to be formed subsequently is located within the second opening K2.

[0123] (18) Forming a color filter structure layer pattern. Forming the color filter structure layer pattern may include: coating a black pigment or depositing a black chromium (Cr) film on the substrate 101 on which the aforementioned pattern is formed, and patterning the black pigment or the black chromium film using a patterning process to form a black matrix pattern located on one side of the fourth insulating layer 204, as shown in FIG. 5G .

[0124] At least a portion of the light-shielding structure 108 and the black matrix 301 can be interconnected as an integrated structure, which can simplify the film structure of the display substrate and reduce the manufacturing cost of the display substrate. The light-shielding structure 108 can include at least one of a first light-shielding portion 801 and a second light-shielding portion 802. For example, the first light-shielding portion 801 and the black matrix 301 can be interconnected as an integrated structure. Alternatively, the second light-shielding portion 802 and the black matrix 301 can be interconnected as an integrated structure.

[0125] Forming the color filter structure layer pattern may also include: forming a filter layer pattern located on one side of the fourth insulating layer 204 on the substrate 101 formed with the aforementioned pattern by photolithography or other methods. The filter layer pattern may include multiple color filters 302. As shown in FIG5G , the color filters 302 and the black matrix 301 are located on the same side of the fourth insulating layer 204, and the orthographic projection of the color filters 302 on the display substrate does not overlap with the orthographic projection of the black matrix 301 on the display substrate. The color filters 302 are respectively arranged in the red sub-pixel, white sub-pixel, blue sub-pixel, and green sub-pixel to filter the white light emitted by the light-emitting device into red (R) light, white (W) light, blue (B) light, and green (G) light.

[0126] (19) Forming a first encapsulation layer pattern. Forming the first encapsulation layer pattern may include: depositing a fifth insulating film on the substrate 101 on which the aforementioned pattern is formed, and patterning the fifth insulating film through a patterning process to form a first encapsulation layer pattern located on one side of the color filter structure layer, as shown in FIG5H . The first encapsulation layer 104 may include at least one fourth via K4. The fourth via K4 may penetrate the first encapsulation layer 104, the black matrix 301, and the fourth insulating layer 204, and expose a portion of the surface of the first connection electrode 211, so that at least a portion of the second connection electrode formed subsequently is located within the fourth via K4, and the second connection electrode is connected to the first connection electrode 211 via the fourth via K4.

[0127] (20) Forming a fourth conductive layer pattern. Forming the fourth conductive layer pattern may include: depositing a fourth conductive film on the substrate 101 on which the aforementioned pattern is formed, and patterning the fourth conductive film through a patterning process to form a fourth conductive layer pattern disposed on one side of the first encapsulation layer. As shown in FIG5I , the fourth conductive layer may include a second connection electrode 212 and an anode 501. At least a portion of the second connection electrode 212 may be located within the fourth via hole K4 and connected to the first connection electrode 211. The fourth conductive layer pattern may include an anode located in the first sub-pixel, an anode located in the second sub-pixel, an anode located in the third sub-pixel, and an anode located in the fourth sub-pixel.

[0128] (21) Forming a pixel definition layer pattern. Forming the pixel definition layer pattern may include: coating a pixel definition film on the substrate 101 on which the aforementioned pattern is formed, and patterning the pixel definition film through a patterning process to form a pixel definition layer pattern. The pixel definition layer 504 may include at least a pixel opening 504-1 located in each sub-pixel, as shown in FIG5J. The pixel opening 504-1 exposes at least a portion of the surface of the anode 501 so that a portion of the subsequently formed organic light-emitting layer contacts the anode 501.

[0129] (22) Forming a fifth conductive layer pattern. Forming the fifth conductive layer pattern may include: sequentially forming an organic light-emitting film and a fifth conductive film on the substrate 101 on which the aforementioned pattern is formed, and patterning the fifth conductive film and the organic light-emitting film through a patterning process to form an organic light-emitting layer pattern and a fifth conductive layer pattern located on one side of the pixel definition layer 504, as shown in FIG5K. The fifth conductive layer may include a cathode 503. For example, the fifth conductive layer may also include a power line, etc. The stacked anode 501, the organic light-emitting layer 502, and the cathode 503 constitute a light-emitting device. The organic light-emitting layer 502 is connected to the anode 501, and the cathode 503 is connected to the organic light-emitting layer 502. The organic light-emitting layer 502 can emit light under the drive of the anode 501 and the cathode 503.

[0130] In an exemplary embodiment, the fifth conductive layer may be made of a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Alternatively, the fifth conductive layer may be made of an alloy of metal materials such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). The fifth conductive layer may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0131] (23) Forming a second encapsulation layer pattern. Forming the second encapsulation layer pattern may include: depositing a sixth insulating film on the substrate 101 having the aforementioned pattern formed thereon, and patterning the sixth insulating film through a patterning process to form a second encapsulation layer pattern located on one side of the fifth conductive layer, as shown in FIG5L . The orthographic projection of the second encapsulation layer 106 on the display substrate may include the orthographic projection of the fifth conductive layer on the display substrate, thereby preventing external water and oxygen from invading the light-emitting structure layer and improving the reliability of the display substrate.

[0132] (24) Forming a cover layer. Forming the cover layer may include: preparing a cover layer 107 on the substrate 101 having the aforementioned pattern formed thereon, as shown in FIG5M . The cover layer 107 may be made of glass or a flexible plastic such as colorless polyimide.

[0133] FIG6 is a schematic diagram of the cross-sectional structure of a display substrate according to another embodiment of the present disclosure. As shown in FIG6 , on a plane perpendicular to the display substrate, each sub-pixel in the display substrate may include a substrate 101, a driving circuit layer 102 disposed on one side of the substrate 101, a color filter structure layer 103 disposed on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 disposed on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 disposed on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 disposed on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 disposed on the side of the second encapsulation layer 106 away from the substrate 101. The light-emitting structure layer 105 may include multiple light-emitting devices. The main difference between the display substrate shown in FIG6 and the display substrate shown in FIG4 is that a portion of the first connecting electrode 211 and the second connecting electrode 212 are reused as at least a portion of the light-shielding structure 108. In a structure where the light shielding structure 108 includes a first light shielding portion 801 and a second light shielding portion 802, portions of the first connection electrode 211 and the second connection electrode 212 can be reused as the first light shielding portion 801, which can optimize the layout of the display substrate and make the overall design structure of the display substrate more compact. In some possible examples, in a structure where the light shielding structure 108 includes a first light shielding portion 801 and a second light shielding portion 802, portions of the first connection electrode 211 and the second connection electrode 212 can be reused as the second light shielding portion 802. In some possible examples, in a structure where the light shielding structure 108 includes only the first light shielding portion 801 or only the second light shielding portion 802, portions of the first connection electrode 211 and the second connection electrode 212 can be reused as the light shielding structure 108.

[0134] In one exemplary embodiment, the first connection electrode 211 and the second connection electrode 212 may be made of a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Alternatively, the first connection electrode 211 and the second connection electrode 212 may be made of an alloy of metal materials such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb). The first connection electrode 211 and the second connection electrode 212 may have a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0135] In one exemplary embodiment, the second connecting electrode 212 and the anode 501 of the light-emitting device are not connected to each other as an integral structure. The anode 501 can be made of a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). This can prevent the anode from absorbing or blocking light emitted by the light-emitting device, thereby improving the light utilization efficiency of the display substrate.

[0136] FIG7 is a schematic diagram of the cross-sectional structure of a display substrate according to another embodiment of the present disclosure. As shown in FIG7 , on a plane perpendicular to the display substrate, each sub-pixel in the display substrate may include a substrate 101, a driving circuit layer 102 disposed on one side of the substrate 101, a color filter structure layer 103 disposed on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 disposed on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 disposed on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 disposed on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 disposed on the side of the second encapsulation layer 106 away from the substrate 101. The light-emitting structure layer 105 may include multiple light-emitting devices. The main difference between the display substrate shown in FIG7 and the display substrate shown in FIG4 is that the first connecting electrode 211 can be reused as at least part of the light-shielding structure 108. In a structure where the light shielding structure 108 includes a first light shielding portion 801 and a second light shielding portion 802, the first connection electrode 211 can be reused as the first light shielding portion 801, which can optimize the layout of the display substrate and make the overall design structure of the display substrate more compact. In some possible examples, in a structure where the light shielding structure 108 includes a first light shielding portion 801 and a second light shielding portion 802, the first connection electrode 211 can be reused as the second light shielding portion 802. In some possible examples, in a structure where the light shielding structure 108 includes only the first light shielding portion 801 or only the second light shielding portion 802, the first connection electrode 211 can be reused as the light shielding structure 108.

[0137] In some possible exemplary embodiments, the surface of the first connecting electrode 211 away from the substrate 101 can be flush with the surface of the fourth insulating layer 204 away from the substrate 101, or the surface of the first connecting electrode 211 away from the substrate 101 is further away from the substrate 101 than the surface of the fourth insulating layer 204 away from the substrate 101. This can increase the shading area of ​​the first connecting electrode and shorten the size of the second connecting electrode along the thickness direction of the display substrate, which can also be called the depth, thereby improving the connection reliability of the second connecting electrode.

[0138] In one exemplary embodiment, the first connection electrode 211 may be made of a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). Alternatively, the first connection electrode 211 may be made of an alloy of metal materials such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), such as aluminum-neodymium (AlNd) or molybdenum-niobium (MoNb). The first connection electrode 211 may have a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0139] In one exemplary embodiment, the second connection electrode 212 and the anode 501 of the light-emitting device can be interconnected and integrated. The second connection electrode 212 and the anode 501 can be made of a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). This can prevent the anode from absorbing or blocking light emitted by the light-emitting device, thereby improving the light utilization efficiency of the display substrate.

[0140] FIG8 is a schematic diagram of the cross-sectional structure of a display substrate according to another embodiment of the present disclosure. As shown in FIG8 , on a plane perpendicular to the display substrate, each sub-pixel in the display substrate may include a substrate 101, a driving circuit layer 102 arranged on one side of the substrate 101, a color filter structure layer 103 arranged on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 arranged on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 arranged on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 arranged on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 arranged on the side of the second encapsulation layer 106 away from the substrate 101. The light-emitting structure layer 105 may include multiple light-emitting devices. The main difference between the display substrate shown in FIG8 and the display substrate shown in FIG4 is that the light-shielding structure 108 and the black matrix 301 are not an integral structure connected to each other, and the material of the light-shielding structure 108 and the material of the black matrix 301 may be the same or different. As shown in FIG. 8 , the surface of the light shielding structure 108 away from the substrate 101 may be flush with the surface of the fourth insulating layer 204 away from the substrate 101 .

[0141] FIG9 is a schematic cross-sectional view of a display substrate according to another embodiment of the present disclosure. As shown in FIG9 , in a plane perpendicular to the display substrate, each sub-pixel in the display substrate may include a substrate 101, a driving circuit layer 102 disposed on one side of the substrate 101, a color filter structure layer 103 disposed on the side of the driving circuit layer 102 away from the substrate 101, a first encapsulation layer 104 disposed on the side of the color filter structure layer 103 away from the substrate 101, a light-emitting structure layer 105 disposed on the side of the first encapsulation layer 104 away from the substrate 101, a second encapsulation layer 106 disposed on the side of the light-emitting structure layer 105 away from the substrate 101, and a cover layer 107 disposed on the side of the second encapsulation layer 106 away from the substrate 101. The light-emitting structure layer 105 may include multiple light-emitting devices. The main difference between the display substrate shown in FIG9 and the display substrate shown in FIG4 is that the light-shielding structure 108 and the black matrix 301 are not an integral structure connected to each other, and the material of the light-shielding structure 108 and the material of the black matrix 301 may be the same or different. As shown in FIG9 , the surface of the light shielding structure 108 away from the substrate 101 is closer to the substrate 101 than the surface of the fourth insulating layer 204 away from the substrate 101. For example, the surface of the light shielding structure 108 away from the substrate 101 can be flush with the surface of the third insulating layer 203 away from the substrate 101. Alternatively, the surface of the light shielding structure 108 away from the substrate 101 can be flush with the surface of the second insulating layer 202 away from the substrate 101, etc.

[0142] The manufacturing process of the display substrate may include the following steps. Taking the structure of the display substrate shown in FIG. 9 as an example, the manufacturing process of the display substrate is shown in FIG. 10A to FIG. 10F :

[0143] (11) A substrate 101 is provided and a first conductive layer pattern, a first insulating layer pattern, a semiconductor layer pattern, a second insulating film, and a second conductive layer pattern are sequentially formed on one side of the substrate 101, as shown in FIG10A . The first conductive layer may include a light shielding block 205 and a data signal line, etc. The semiconductor layer may include an active layer 206 of a transistor. Forming the semiconductor layer pattern may also include performing a conductor treatment on a portion of the active layer 206 so that the portion of the active layer 206 forms a first region 209 and a second region 210, respectively. The first region 209 of the active layer 206 may be used as a first electrode of the transistor, and the second region 210 of the active layer 206 may be used as a second electrode of the transistor. The second conductive layer may include a gate 207 of the transistor and a scanning signal line, etc.

[0144] (12) Forming a third insulating layer pattern. Forming the third insulating layer pattern may include: depositing a third insulating film on the substrate 101 on which the aforementioned pattern is formed, and patterning the third insulating film and the second insulating film through a patterning process to form a second insulating layer pattern disposed on one side of the semiconductor layer and a third insulating layer pattern disposed on one side of the second conductive layer. As shown in FIG10B , the third insulating layer 203 may be provided with at least one third opening K3, which passes through the third insulating layer 203 and the second insulating layer 202 and exposes a portion of the surface of the first region 209. The third insulating layer 203 may be provided with at least one fifth opening K5 and a sixth opening K6, which may both pass through the third insulating layer 203 and the second insulating layer 202. The fifth opening K5 may allow at least a portion of the first light shielding portion formed subsequently to be located within the fifth opening K5, and the sixth opening K6 may allow at least a portion of the second light shielding portion formed subsequently to be located within the sixth opening K6.

[0145] (13) Forming a third conductive layer pattern. Forming the third conductive layer pattern may include: depositing a third conductive film on the substrate 101 having the aforementioned pattern formed thereon, and patterning the third conductive film through a patterning process to form a third conductive layer pattern disposed on one side of the third insulating layer 203. As shown in FIG10C , the third conductive layer may include a first connecting electrode 211. The first connecting electrode 211 may be connected to the first region 209 via a third opening K3.

[0146] (14) Forming a light-shielding structure layer pattern. Forming the light-shielding structure layer pattern may include: depositing a light-shielding film on the substrate 101 on which the aforementioned pattern is formed, and patterning the light-shielding film through a patterning process to form a light-shielding structure layer pattern disposed on one side of the third conductive layer. As shown in FIG10D , the light-shielding structure layer includes a light-shielding structure 108. The light-shielding structure 108 may include at least one of a first light-shielding portion 801 and a second light-shielding portion 802. FIG10D shows that the light-shielding structure 108 includes the first light-shielding portion 801 and the second light-shielding portion 802. At least a portion of the first light-shielding portion 801 may be located within the fifth opening K5, and at least a portion of the second light-shielding portion 802 may be located within the sixth opening K6.

[0147] In an exemplary embodiment, the light shielding structure 108 may be made of a metal material, such as any one or more of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). However, the present disclosure does not limit the material used for the light shielding structure.

[0148] (15) Forming a fourth insulating layer pattern. Forming the fourth insulating layer pattern may include: depositing a fourth insulating film on the substrate 101 on which the aforementioned pattern is formed, and patterning the fourth insulating film through a patterning process to form a fourth insulating layer pattern located on one side of the third conductive layer, as shown in FIG. 10E .

[0149] (16) Forming a color filter structure layer pattern. Forming the color filter structure layer pattern may include: coating a black pigment or depositing a black chromium (Cr) film on the substrate 101 forming the aforementioned pattern, and patterning the black pigment or the black chromium film using a patterning process to form a black matrix pattern located on one side of the fourth insulating layer 204, as shown in FIG10F.

[0150] Forming the color filter structure layer pattern may also include: forming a filter layer pattern located on one side of the fourth insulating layer 204 on the substrate 101 formed with the aforementioned pattern by photolithography or other methods. The filter layer pattern may include multiple color filters 302. As shown in FIG10F , the color filters 302 and the black matrix 301 are located on the same side of the fourth insulating layer 204, and the orthographic projection of the color filters 302 on the display substrate does not overlap with the orthographic projection of the black matrix 301 on the display substrate. The color filters 302 are respectively arranged in the red sub-pixel, the white sub-pixel, the blue sub-pixel, and the green sub-pixel to filter the white light emitted by the light-emitting device into red (R) light, white (W) light, blue (B) light, and green (G) light.

[0151] The subsequent preparation process of the display substrate can refer to the above embodiment. In some possible embodiments, the order of (13) forming the third conductive layer pattern and (14) forming the light shielding structure layer pattern in the above preparation process can be interchanged.

[0152] The present disclosure also provides a display device comprising the display substrate of any of the aforementioned embodiments. The display device can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigation system.

[0153] The disclosed embodiments also provide a method for manufacturing a display substrate. By providing a light-shielding structure within the display substrate, this method can improve afterimages and increase the yield rate of the display substrate. The disclosed embodiments can be implemented using existing, mature manufacturing equipment, with minimal improvements to existing processes. The method features a simple manufacturing process, low production cost, and high precision, and has promising application prospects.

[0154] Although the embodiments disclosed herein are as described above, the contents described are merely embodiments for facilitating understanding of the present invention and are not intended to limit the present invention. It should be noted that the above embodiments or implementations are merely illustrative and not restrictive. Therefore, the present disclosure is not limited to the contents specifically shown and described herein. Various modifications, substitutions, or omissions may be made to the forms and details of the implementations without departing from the scope of the present disclosure.

Claims

1. A display substrate includes a substrate, a driving circuit layer on one side of the substrate, and a light-emitting structure layer on a side of the driving circuit layer away from the substrate; the driving circuit layer includes at least one pixel driving circuit, the at least one pixel driving circuit includes at least one transistor, the transistor includes at least an active layer, and the driving circuit layer further includes at least one insulating layer on a side of the active layer away from the substrate; the light-emitting structure layer includes at least one light-emitting device; The display substrate further includes a light-shielding structure, at least a part of the light-shielding structure is located in an opening provided in the at least one insulating layer, and the light-shielding structure is configured to block light emitted by at least one of the light-emitting devices from irradiating a channel region of at least one of the active layers.

2. The display substrate according to claim 1, wherein, The active layer further includes a first region and a second region on opposite sides of the channel region; the light-shielding structure is located between the active layer and the light-emitting structure layer; The light-shielding structure includes at least one of a first light-shielding portion and a second light-shielding portion, a front projection of the first light-shielding portion on the display substrate is located within a front projection of the first region on the display substrate, and a front projection of the second light-shielding portion on the display substrate is located within a front projection of the second region on the display substrate.

3. The display substrate according to claim 2, wherein, The at least one insulating layer is provided with at least one opening, the at least one opening includes at least one of a first opening and a second opening; a front projection of the first opening on the display substrate is located within a front projection of the first region on the display substrate, and a front projection of the second opening on the display substrate is located within a front projection of the second region on the display substrate; wherein, at least a part of the first light-shielding portion is located within the first opening, and at least a part of the second light-shielding portion is located within the second opening.

4. The display substrate according to claim 3, wherein, A side of the first light-shielding portion close to the active layer is in contact with the first region, and a side of the first light-shielding portion away from the active layer is flush with a side of the at least one insulating layer away from the active layer.

5. The display substrate according to claim 3, wherein, A side of the second light-shielding portion close to the active layer is in contact with the second region, and a side of the second light-shielding portion away from the active layer is flush with a side of the at least one insulating layer away from the active layer.

6. The display substrate according to any one of claims 1 to 5, the display substrate further includes a color filter structure layer, the color filter structure layer is located between the driving circuit layer and the light-emitting structure layer; the color filter structure layer includes a light-shielding layer and color filters; wherein, The light-shielding layer and the color filters are provided on the same layer.

7. The display substrate according to claim 6, wherein, The light-shielding layer includes a black matrix, and at least a part of the light-shielding structure and the black matrix are an integrally connected structure.

8. The display substrate according to claim 6, wherein, Two adjacent color filter portions overlap with each other to form an overlapping region, and in a direction perpendicular to the plane of the display substrate, the overlapping region is located between two adjacent light-emitting devices.

9. The display substrate according to any one of claims 1 to 5, wherein, the light-emitting device includes a first electrode, an organic light-emitting layer, and a second electrode which are stacked; the first electrode is closer to the substrate than the second electrode; the first electrode is connected to the active layer via a connection electrode, and part of the connection electrode is multiplexed as at least part of the light-shielding structure.

10. The display substrate according to claim 9, wherein, the connection electrode includes a first connection electrode and a second connection electrode which are stacked, and the first connection electrode is closer to the substrate than the second connection electrode; a first end of the first connection electrode is connected to the active layer, a second end of the first connection electrode is connected to the second connection electrode, and the second connection electrode is connected to the first electrode; wherein, part of the first connection electrode and the second connection electrode is multiplexed as at least part of the light-shielding structure.

11. The display substrate according to claim 9, wherein, the connection electrode includes a first connection electrode and a second connection electrode which are stacked, and the first connection electrode is closer to the substrate than the second connection electrode; a first end of the first connection electrode is connected to the active layer, a second end of the first connection electrode is connected to the second connection electrode, and the second connection electrode is connected to the first electrode; wherein, the first connection electrode is multiplexed as at least part of the light-shielding structure.

12. The display substrate according to claim 11, wherein, the second connection electrode and the first electrode are an integrally connected structure.

13. The display substrate according to any one of claims 1 to 5, the light-emitting device includes a first electrode, an organic light-emitting layer, and a second electrode which are stacked; the first electrode is closer to the substrate than the second electrode; the light-emitting device further includes a pixel definition layer, and the pixel definition layer is provided with a pixel opening which exposes at least part of the surface of the first electrode; wherein, at least part of the light-shielding structure and the pixel definition layer are an integrally connected structure; or, at least part of the light-shielding structure and the organic light-emitting layer are an integrally connected structure; or, at least part of the light-shielding structure and the second electrode are an integrally connected structure.

14. The display substrate according to any one of claims 1 to 5, wherein, the light-shielding structure includes a light-shielding block; the driving circuit layer includes a first conductive layer on one side of the substrate and a semiconductor layer on a side of the first conductive layer away from the substrate; the first conductive layer includes at least one of the light-shielding blocks, the semiconductor layer includes at least one of the active layers, and at least one of the light-shielding blocks has at least partial overlap with the channel region of at least one of the active layers in the orthographic projection on the display substrate.

15. The display substrate according to claim 14, wherein, The orthographic projection of the light-shielding block on the display substrate includes the orthographic projection of the channel region of the active layer on the display substrate.

16. The display substrate according to any one of claims 1 to 5, wherein, the driving circuit layer includes a first conductive layer on one side of the substrate, a semiconductor layer on the side of the first conductive layer away from the substrate, and a second conductive layer on the side of the semiconductor layer away from the substrate; the semiconductor layer includes at least one active layer, and the second conductive layer includes the gate of the transistor; wherein, at least a part of the orthographic projection of the gate on the display substrate overlaps with the orthographic projection of the channel region of the active layer on the display substrate.

17. The display substrate according to claim 16, wherein, the orthographic projection of the gate on the display substrate includes the orthographic projection of the channel region of the active layer on the display substrate.

18. The display substrate according to claim 16, wherein, the light-shielding structure includes a light-shielding block, the first conductive layer includes at least one light-shielding block, and at least a part of the orthographic projection of the gate on the display substrate, the orthographic projection of the channel region of the active layer on the display substrate, and the orthographic projection of the light-shielding block on the display substrate overlap.

19. A display device, including the display substrate according to any one of claims 1 to 18.

20. A method for manufacturing a display substrate, for manufacturing the display substrate according to any one of claims 1 to 18.

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