Display panel, display device, and tiled display device

Abstract

A display panel, a display device, and a tiled display device. The display panel comprises a substrate and a plurality of connecting leads. The substrate has a first surface and a second surface opposite to each other, and a plurality of side surfaces connecting the first surface and the second surface, at least one side surface being a selected side surface. For a first lead section of each connecting lead, the orthographic projection of the upper surface on the first surface has a first boundary, the orthographic projection of the lower surface on the first surface has a second boundary, and a first gap is formed between the first boundary and the second boundary; and / or for a second lead section of each connecting lead, the orthographic projection of the upper surface on the selected side surface has a third boundary, the orthographic projection of the lower surface on the selected side surface has a fourth boundary, and a second gap is formed between the third boundary and the fourth boundary; and / or for a third lead section of each connecting lead, the orthographic projection of the upper surface on the second surface has a fifth boundary, the orthographic projection of the lower surface on the second surface has a sixth boundary, and a third gap is formed between the fifth boundary and the sixth boundary.

Description

Display panel, display device, spliced ​​display device

[0001] This application claims priority to Chinese patent application No. 202311142476.4, filed on September 5, 2023, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present disclosure relates to the field of display technology, and in particular to a display panel, a display device, and a spliced ​​display device. Background Art

[0003] The use of micro light-emitting diodes (MLDs) or sub-millimeter light-emitting diodes (MLDs) as pixels in display panels has attracted widespread attention and research. However, due to mass transfer yield issues, large-scale display devices cannot be produced in one go. Instead, a large-scale spliced ​​display device is usually assembled by splicing small-scale display devices.

[0004] Summary of the Invention

[0005] In one aspect, a display panel is provided. The display panel includes a substrate, a plurality of first electrodes, and a plurality of connecting leads. The substrate includes a first surface and a second surface opposite each other, and a plurality of side surfaces connecting the first and second surfaces, at least one of the side surfaces being a selected side surface. The plurality of first electrodes are disposed on the first surface and adjacent to the selected side surface. Each of the plurality of connecting leads includes a first lead segment, a second lead segment, and a third lead segment connected in sequence, wherein the first lead segment is disposed on the first surface and electrically connected to one of the plurality of first electrodes; the second lead segment is disposed on the selected side surface, and the third lead segment is disposed on the second surface.

[0006] The upper surface of the first lead segment farthest from the first surface has a first boundary in its orthographic projection on the first surface, the lower surface of the first lead segment closest to the first surface has a second boundary in its orthographic projection on the first surface, and a first interval exists between the first boundary and the second boundary; and / or, the upper surface of the second lead segment farthest from the selected side surface has a third boundary in its orthographic projection on the selected side surface, the lower surface of the second lead segment closest to the selected side surface has a fourth boundary in its orthographic projection on the selected side surface, and a second interval exists between the third boundary and the fourth boundary; and / or, the upper surface of the third lead segment farthest from the second surface has a fifth boundary in its orthographic projection on the second surface, the lower surface of the third lead segment closest to the second surface has a sixth boundary in its orthographic projection on the second surface, and a third interval exists between the fifth boundary and the sixth boundary.

[0007] In some embodiments, the first lead segment has a plurality of first cross-sections parallel to the first surface, there are two first cross-sections among the plurality of first cross-sections, and the area of ​​the first cross-section relatively closer to the first surface is larger than the area of ​​the first cross-section farther away from the first surface; and / or, the second lead segment has a plurality of second cross-sections parallel to the selected side surface, there are two second cross-sections among the plurality of second cross-sections, and the area of ​​the second cross-section relatively closer to the selected side surface is larger than the area of ​​the second cross-section farther away from the selected side surface; and / or, the third lead segment has a plurality of third cross-sections parallel to the second surface, there are two third cross-sections among the plurality of third cross-sections, and the area of ​​the third cross-section relatively closer to the second surface is larger than the area of ​​the third cross-section farther away from the second surface.

[0008] In some embodiments, at least one of the first lead segment, the second lead segment, and the third lead segment has two opposite side edges in a cross section perpendicular to its extension direction, and the side edges are composed of a plurality of sub-segments connected in sequence, each sub-segment is an arc segment, or each sub-segment is a straight line segment, or a part of the sub-segments are arc segments and the other part of the sub-segments are straight line segments.

[0009] In some embodiments, for the same side, there are at least two sub-segments, and the slope or curvature of the sub-segment relatively closer to the substrate is smaller than the slope or curvature of the sub-segment relatively farther from the substrate.

[0010] In some embodiments, for any side, some of the multiple subsegments are arc segments, and other subsegments are straight segments, wherein the arc segments are closer to the substrate than the straight segments.

[0011] In some embodiments, the thermal conductivity of the material of the plurality of connecting wires ranges from 30 W / (m·K) to 60 W / (m·K).

[0012] In some embodiments, the display panel further comprises an inorganic layer disposed on one side of the upper surface of the plurality of connecting leads, wherein the inorganic layer at least covers the upper surface of the second lead segment.

[0013] In some embodiments, the inorganic layer further covers upper surfaces of portions of the first lead segment and the third lead segment adjacent to the selected side surface.

[0014] In some embodiments, the bonding energy of the material of the inorganic layer is less than the photon energy of light in the wavelength range of 200 nm to 1200 nm.

[0015] In some embodiments, the melting point R1 of the material of the plurality of connecting leads is lower than the melting point R2 of the material of the inorganic layer; R2 - R1 ≥ 500°C.

[0016] In some embodiments, when the temperature is less than R1+(R2-R1) / 2, the light absorptivity of the material of the inorganic layer is greater than the light absorptivity of the material of the plurality of connecting leads for light within the same wavelength range. When the temperature is greater than or equal to R1+(R2-R1) / 2 and less than R2, the light absorptivity of the material of the inorganic layer is less than the light absorptivity of the material of the plurality of connecting leads for light within the same wavelength range.

[0017] In some embodiments, the material of the inorganic layer includes zirconium dioxide.

[0018] In some embodiments, the first interval, the second interval, and the third interval range from 0 to 3 μm.

[0019] In some embodiments, any two adjacent connecting leads have a gap between them, including a fourth gap between any two adjacent first lead segments, a fifth gap between any two adjacent second lead segments, and a sixth gap between any two adjacent third lead segments. The display panel also includes a conductive island pattern located in at least one of the fourth, fifth, and sixth gaps. The conductive island pattern is spaced apart from the connecting leads, and its width is less than half the width of the gap in which it is located.

[0020] In another aspect, a display device is provided. The display device includes a circuit board and a display panel according to any of the above embodiments. The circuit board is electrically connected to a plurality of connecting leads.

[0021] In another aspect, a spliced ​​display device is provided, comprising: a plurality of display panels according to any one of the above embodiments; or a plurality of display devices according to any one of the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0023] FIG1 is a planar structural diagram of a spliced ​​display device according to some embodiments;

[0024] FIG2 is a front structural diagram of a display device according to some embodiments;

[0025] FIG3 is a cross-sectional structural diagram obtained according to the cross-sectional line BB in FIG2 ;

[0026] FIG4 is a rear structural diagram of a display device according to some embodiments;

[0027] FIG5 is a rear structural diagram of a display device according to some other embodiments;

[0028] FIG6 is a front structural diagram of a display panel according to some embodiments;

[0029] FIG7 is a side surface structural diagram of a display panel according to some embodiments;

[0030] FIG8 is a structural diagram of a back side of a display panel according to some embodiments;

[0031] FIG9 is an enlarged structural diagram of area C in FIG8 ;

[0032] FIG10 is a planar structural diagram of a display panel corresponding to step S2 of the manufacturing method according to some embodiments;

[0033] FIG11 is a cross-sectional structural diagram of a display panel corresponding to step S2 of a manufacturing method according to some embodiments;

[0034] FIG12 is a cross-sectional structural diagram obtained along the cross-sectional line EE in FIG10 ;

[0035] FIG13 is another cross-sectional structural diagram obtained according to the cross-sectional line EE in FIG10;

[0036] FIG14 is a diagram illustrating an etching and removal process of a first etched portion in a preparation method according to some embodiments;

[0037] FIG15 is a cross-sectional structural diagram of a third lead segment according to some embodiments;

[0038] FIG16 is a cross-sectional structural diagram obtained according to the cross-sectional line FF in FIG5 ;

[0039] FIG17 is another cross-sectional structural diagram obtained according to the cross-sectional line FF in FIG5 ;

[0040] FIG18 is a cross-sectional structural diagram obtained according to the cross-sectional lines GG and HH in FIG17;

[0041] FIG19 is a rear structural diagram of the display panel 10 according to some embodiments;

[0042] FIG. 20 is another cross-sectional structural diagram obtained according to the cross-sectional line BB in FIG. 2 . DETAILED DESCRIPTION

[0043] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0044] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0045] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0046] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0047] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0048] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0049] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0050] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0051] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0052] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0053] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0054] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0055] To improve product reliability and reduce transportation and maintenance costs, large-size display devices can be assembled by splicing multiple small-size display devices. To avoid the fragmented display image caused by splicing, the frame size of each small-size display device needs to be reduced, and the width of the splicing seam needs to be shortened.

[0056] The small-size display device includes a display panel. For example, the wiring located on the display surface side of the display panel can be connected to a circuit board (such as a flexible circuit board) arranged on the non-display surface side of the display panel through side surface wiring. Therefore, when multiple small-size display devices are spliced ​​together to form a larger-size large-size display device, the spacing between adjacent small-size display devices can be smaller, thereby improving the display quality of the large-size display device formed by splicing multiple small-size display devices.

[0057] The embodiments of the present disclosure provide a display panel 10 and a manufacturing method thereof, as well as a display device 100 and a spliced ​​display device 1000 including the display panel 10. The display panel 10 and a manufacturing method thereof, as well as the display device 100 and the spliced ​​display device 1000 including the display panel 10 provided by the present disclosure are described below.

[0058] In the present disclosure, the display panel 10 and the display device 100 actually formed include, in addition to the first electrode 2, the connecting lead 3 and the light-emitting device layer 5 shown in the accompanying drawings, other structures are also included; and the number of structures such as the light-emitting device 51 and the connecting lead 3 included in the display panel 10 and the display device 100 actually formed is not limited to those shown in the drawings, and may also include more.

[0059] In some embodiments, as shown in FIG. 2 and FIG. 3 , the display device 100 includes a display panel 10 and a circuit board 20 , and the display panel 10 is electrically connected to the circuit board 20 .

[0060] The display device 100 can be any device that displays a display, whether in motion (e.g., video), stationary (e.g., still image), text, or an image. More specifically, it is contemplated that the embodiments described may be implemented in or associated with a variety of electronic devices, such as, but not limited to, mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, automotive displays (e.g., speedometer displays, etc.), navigation systems, cockpit controls and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), and the like.

[0061] Exemplarily, the circuit board 20 includes but is not limited to a PCB (Printed Circuit Board) and an FPC (Flexible Printed Circuit Board).

[0062] For example, the display device 100 may further include a frame and other electronic components, etc. The display panel 10 may be disposed within the frame, for example.

[0063] In some embodiments, the spliced ​​display device 1000 includes: a plurality of spliced ​​display devices 100. Alternatively, as shown in FIG1 , the spliced ​​display device 1000 includes: a plurality of spliced ​​display panels 10.

[0064] Exemplarily, as shown in FIG. 1 and FIG. 2 , the display panel 10 has a display area AA and a peripheral area AN located on at least one side of the display area AA.

[0065] For example, the peripheral area AN is located at one side of the display area AA.

[0066] For another example, the peripheral area AN is located on two opposite sides of the display area AA.

[0067] For another example, the peripheral area AN surrounds the display area AA.

[0068] It should be noted that the specific configuration of the peripheral area AN is related to the specific design of the display panel 10 and can be designed according to actual needs. It is only used as an example here and is not intended to limit the present disclosure.

[0069] The following describes a spliced ​​display device 1000 comprising a plurality of spliced ​​display panels 10, each display panel 10 having a peripheral area AN located adjacent to an display area AA. In some embodiments, as shown in FIG1 , the plurality of display panels 10 are arranged in a plurality of columns along a first direction X and in a plurality of rows along a second direction Y.

[0070] As shown in FIG1 , among the multiple display panels 10 that are spliced ​​together, the peripheral areas AN of the display panels 10 are all arranged along the first direction X. Thus, among the multiple display panels 10 arranged in a row along the first direction X, there is substantially no splicing seam between two adjacent display panels 10 along the first direction X; and among the multiple display panels 10 arranged in a column along the second direction Y, there is a splicing gap between two adjacent display panels 10.

[0071] That is, the size of the splicing gap between two adjacent display panels 10 in a row along the first direction X is smaller than the size of the splicing gap between two adjacent display panels 10 in a column along the second direction Y.

[0072] In this way, when viewing the spliced ​​display device 1000 , the seam between two adjacent display panels 10 is difficult to be seen by the naked eye within the viewing distance, thereby making the display image of the spliced ​​display device 1000 more complete and presenting a better display effect.

[0073] In some embodiments, as shown in FIG. 2 and FIG. 3 , the display panel 10 includes a substrate 1 , a plurality of first electrodes 2 , and a plurality of connecting wires 3 .

[0074] Exemplarily, the material of the substrate 1 is a rigid material, including but not limited to glass, quartz, plastic, and the like.

[0075] Exemplarily, the material of the substrate 1 is a flexible material, including but not limited to FPC, PI base film (Polyimide Film), and the like.

[0076] It should be noted that the material selection of the substrate 1 is related to the specific design of the display panel 10 and can be selected according to actual needs. It is only used as an example here and is not intended to limit the present disclosure.

[0077] In some examples, as shown in FIG. 1 , the display panel 10 is rectangular in shape, the substrate 1 includes four side surfaces 1 c , and the angle formed at the junction of two adjacent side surfaces 1 c is a right angle.

[0078] In other examples, as shown in FIG. 2 , the display panel 10 is roughly rectangular in shape, and the substrate 1 includes four side surfaces 1 c . Two adjacent side surfaces 1 c are curved at their connecting positions and are arc-shaped at the corners of the display panel 10 .

[0079] It should be noted that the shape of the joint position of any two adjacent side surfaces 1c of the substrate 1, the number of selected side surfaces 1cc included in the substrate 1, and the specific arrangement of the multiple first electrodes 2 and the multiple connecting leads 3 are related to the specific design of the display panel 10 and can be designed according to actual needs. They are only used as exemplary illustrations here and are not intended to limit the present disclosure.

[0080] In some embodiments, as shown in FIG. 2 , the display panel 10 includes a plurality of pixels, and each pixel includes sub-pixels P of at least three colors.

[0081] In some examples, the sub-pixel P includes at least a first color sub-pixel, a second color sub-pixel, and a third color sub-pixel. The first color, the second color, and the third color are three primary colors, such as red, green, and blue.

[0082] In some other examples, the sub-pixel P further includes a fourth color sub-pixel, and the fourth color is, for example, white.

[0083] In some embodiments, as shown in FIG. 3 , the display panel 10 further includes a film structure including a driving circuit layer 8 and a light-emitting device layer 5 disposed in the display area AA.

[0084] 3 , the light-emitting device layer 5 is located on a side of the driving circuit layer 8 away from the substrate 1 and is electrically connected to the driving circuit layer 8. The light-emitting device layer 5 includes a plurality of light-emitting devices 51, which are configured to emit light under the control of a driving signal from the driving circuit layer 8.

[0085] Exemplarily, the light-emitting device 51 includes but is not limited to OLED (Organic Light-Emitting Diode), Mini LED (Mini Light-Emitting Diode), Micro LED (Micro Light-Emitting Diode), etc.

[0086] Exemplarily, each sub-pixel P includes at least one light emitting device 51 .

[0087] Exemplarily, as shown in FIG. 2 , a plurality of first electrodes 2 are disposed on the first surface 1 a and close to the selected side surface 1 cc.

[0088] In some examples, as shown in FIG. 2 , the plurality of first electrodes 2 are located in the peripheral area AN and disposed close to the selected side surface 1 cc.

[0089] One end of the first electrode 2 is electrically connected to the driving circuit layer 8 , for example, and the other end is electrically connected to a connecting lead 3 , for example.

[0090] Exemplarily, the driving circuit layer 8 includes: a plurality of signal lines located in the display area AA.

[0091] In some examples, at least a portion of the plurality of signal lines is electrically connected to the light-emitting device layer 5 and is configured to provide a light-emitting driving signal to the light-emitting device layer 5 .

[0092] In some examples, one end of each first electrode 2 is electrically connected to a signal line, for example, and the other end is electrically connected to a connection lead 3. The first electrode 2 is configured to transmit a driving signal (eg, a light-emitting driving signal) transmitted by the connection lead 3 to the driving circuit layer 8.

[0093] In some embodiments, as shown in FIG. 3 , the light-emitting device layer 5 further includes: a plurality of pixel driving chips 52 and a protective film 53 .

[0094] Exemplarily, the pixel driving chip 52 is configured to provide a driving signal to the light emitting device 51 .

[0095] 3 , the protective film 53 includes a portion covering the plurality of light-emitting devices 51 and a portion filling the gaps between the plurality of light-emitting devices 51. The protective film 53 can protect the plurality of light-emitting devices 51 in the light-emitting device layer 5, preventing the plurality of light-emitting devices 51 from being damaged by bumps during subsequent manufacturing processes.

[0096] The material of the protective film 53 includes but is not limited to black silicone or black resin.

[0097] In other embodiments, the light emitting device layer 5 may not have the pixel driving chip 52 , but instead utilizes thin film transistors disposed in the driving circuit layer 8 to provide driving signals to the light emitting devices 51 .

[0098] This is merely an illustrative description of the present disclosure and is not intended to limit the present disclosure.

[0099] In some embodiments, as shown in Figure 3, among the multiple connecting leads 3, each connecting lead 3 includes a first lead segment 31, a second lead segment 32 and a third lead segment 33 connected in sequence, the first lead segment 31 is arranged on the first surface 1a, and the first lead segment 31 is electrically connected to one of the multiple first electrodes 2; the second lead segment 32 is arranged on the selected side surface 1cc, and the third lead segment 33 is arranged on the second surface 1b.

[0100] Exemplarily, as shown in FIG3 , the first lead segment 31 of the connecting lead 3 is located in the peripheral area AN.

[0101] In some examples, as shown in Figure 4, the display panel 10 also includes a plurality of second electrodes 4 arranged on the second surface 1b of the substrate 1, and one end of each second electrode 4 is electrically connected to a third lead segment 33 of a connecting lead 3, and the other end is electrically connected to an external driving circuit (such as a circuit board 20).

[0102] For example, a bonding process is used to connect the second electrode 4 to the circuit board 20 so as to transmit the driving signal from the circuit board 20 to the light-emitting device layer 5 through the second electrode 4, the connecting lead 3 and the driving circuit layer 8 in sequence.

[0103] In this case, the connecting leads 3 function as connecting wires, electrically connecting the drive circuit disposed on the front surface of the display panel 10 to the external drive circuit disposed on the back surface of the display panel 10, and the second electrodes 4 function as bonding electrodes electrically connected to the external drive circuit. For example, the connecting leads 3 function as connecting wires, connecting the drive circuit layer 8 disposed on the first surface 1a of the substrate 1 to the circuit board 20 disposed on the second surface 1b of the substrate 1, and the second electrodes 4 function as bonding electrodes connected to the circuit board 20.

[0104] In other examples, as shown in Figures 3 and 5 , the end of the third lead segment 33 away from the selected side surface 1cc is electrically connected to an external driving circuit. In a direction perpendicular to the selected side surface 1cc of the substrate 1, the length d2 of the third lead segment 33 of the connecting lead 3 is greater than the length d1 of the first lead segment 31 of the connecting lead 3.

[0105] In some examples, the third lead segment 33 of the connecting lead 3 is linear and extends along the second direction Y shown in FIG5 . The length of the third lead segment 33 is the dimension of the third lead segment 33 in the direction of its extension. Therefore, the length d2 of the linear third lead segment 33 is the dimension of the third lead segment 33 in the second direction Y.

[0106] In other examples, as shown in FIG5 , the third lead segment 33 of the connecting lead 3 is shaped like a zigzag line. The third lead segment 33 includes multiple sub-segments connected end-to-end and extending in different directions. The third lead segment 33 as a whole extends generally along the second direction Y shown in FIG5 . Therefore, the length d2 of the zigzag-shaped third lead segment 33 is the dimension of the entire third lead segment 33 in the second direction Y. The angle formed between the extension direction of any sub-segment of the third lead segment 33 and the second direction Y ranges from 0° to 70°.

[0107] The length d2 of the third lead segment 33 of the connecting lead 3 is greater than the dimension d3 of the peripheral area AN in the direction in which the third lead segment 33 extends. It is understood that the orthographic projection of the third lead segment 33 of the connecting lead 3 on the substrate 1 overlaps with the area corresponding to the display area AA. In the orthographic projection onto the first surface 1a of the substrate 1, the third lead segment 33 of the connecting lead 3 extends to the display area AA. A bonding process is used to connect the third lead segment 33 of the connecting lead 3 to the circuit board 20, thereby transmitting the drive signal from the circuit board 20 to the light-emitting device layer 5 through the connecting lead 3 and the drive circuit layer 8.

[0108] In this case, the third lead segment 33 not only serves as a connection lead connecting the front driving circuit and the rear external driving circuit, but also serves as a binding electrode, directly connected to the circuit board 20 .

[0109] In some embodiments, the fabrication process for the plurality of connecting leads 3 is as follows: a conductive layer D is formed entirely on a selected side surface 1cc of the substrate 1. For example, the conductive layer D is formed by a three-dimensional sputtering process, extending from the first surface 1a of the substrate 1 through the selected side surface 1cc to the second surface 1b. Exemplarily, the conductive layer D includes a first portion D1 located on the first surface 1a, a second portion D2 located on the selected side surface 1cc of the substrate 1, and a third portion D3 located on the second surface 1b of the substrate 1. The first portion D1, the second portion D2, and the third portion D3 are sequentially connected. Subsequently, the conductive layer D is patterned by laser etching to form a plurality of independent connecting leads 3.

[0110] The above-mentioned preparation processes for forming the plurality of connecting leads 3, such as the sputtering coating process and the laser etching process, are only described as examples and are not intended to limit the actual production process.

[0111] It can be understood that the first lead segment 31 of the connecting lead 3 is obtained by patterning the first portion D1 of the conductive layer D; the second lead segment 32 of the connecting lead 3 is obtained by patterning the second portion D2 of the conductive layer D; and the third lead segment 33 of the connecting lead 3 is obtained by patterning the third portion D3 of the conductive layer D. The length d2 of the third lead segment 33 of the connecting lead 3 is greater than the length d1 of the first lead segment 31 of the connecting lead 3. Therefore, the area of ​​the third portion D3 of the conductive layer D located on the second surface 1b of the substrate 1 is greater than the area of ​​the first portion D1 of the conductive layer D located on the first surface 1a of the substrate 1.

[0112] In this way, during the actual laser process, the length of the portion that needs to be laser etched on one side of the second surface 1b of the substrate 1 is longer. Since the third lead segment 33 of the connecting lead 3 extends to the display area AA, during the process of etching to form the third lead segment 33 of the connecting lead 3, the laser is irradiated toward the substrate 1 along the third direction Z shown in Figure 3. The laser may pass through the substrate 1 and irradiate the first surface 1a, and cause damage to the front film structure of the display panel 10, etc., resulting in local corrosion and other problems.

[0113] In the process of forming the third lead segment 33 of the connecting lead 3, when the laser passes through the substrate 1 from the second surface 1b of the substrate 1 to the first surface 1a, the driving circuit layer 8, for example, includes a thin film transistor. After the active layer of the thin film transistor in the driving circuit layer 8 is irradiated with the laser, the characteristics of the thin film transistor will change, for example, the threshold current for turning off the thin film transistor will increase, thereby affecting the display effect.

[0114] Alternatively, laser irradiation of the signal line in the driving circuit layer 8 may cause damage to the signal line. For example, a portion of the signal line may be etched away or damaged by the laser irradiation, increasing the line resistance of that portion of the signal line and affecting signal transmission. Alternatively, if the signal line is narrow, laser irradiation of the signal line may cause the irradiated portion of the signal line to be etched away by the laser, causing that portion of the signal line to be disconnected and preventing normal signal transmission.

[0115] Alternatively, laser irradiation of the light emitting device 51 may cause the characteristics of the light emitting device 51 to change, so that the light emitting effect of the light emitting device 51 cannot achieve the expected effect. For example, the light emitting device 51 may not emit light normally, or the brightness or color of the light may change, thereby affecting the display effect.

[0116] The laser loss mentioned above shows that the front film structure of the panel 10 includes damage to the driving circuit layer 8 and the light-emitting device layer 5 .

[0117] On the other hand, a plurality of connecting leads 3 are formed by directly etching the conductive layer D with a laser. In this way, during the laser etching process, the portion of the conductive layer D removed by the laser etching may generate an electron-phonon coupling process under the action of the laser.

[0118] For example, when laser light is applied directly to the first etched portion K1, the laser energy is transferred to the lattice. Electrons are the first to undergo a transformation, becoming excited to a high-energy state. These electrons then transfer energy to lower-energy atoms by radiating phonons, creating an "electron-phonon coupling process." After relaxation, the phonons reach thermal equilibrium, completing the thermal diffusion process. This thermal diffusion process absorbs sufficient energy in the first etched portion K1, locally reaching its boiling point or even higher, transforming it from a solid state to a molten state.

[0119] During this process, when the laser energy density exceeds the threshold, the material of the first etching part K1 will enter an unstable coupling state, and a large amount of energy will accumulate within the range of the laser energy and will not have time to diffuse. After the first etching part K1 absorbs enough energy, it will directly transform from a solid state to a plasma state and leave the first etching area Q1.

[0120] During the entire processing process, the material of the first etched portion K1 exists in both a molten state and a plasma state. The portion of the first etched portion K1 that has been converted to a plasma state can be effectively removed, while the portion of the first etched portion K1 that has been converted to a molten state may partially remain unremoved. This residual portion may undergo secondary solidification during the cooling process to form metal particles, resulting in residual metal in the first etched area Q1 (the area between the connecting leads 3). This residual metal may adversely affect the performance of the display panel 10.

[0121] In this preparation method, the molten portion of the material of the first etching portion K1 is the main reason for the generation of etching residues. During the laser etching process, the larger the proportion of the first etching portion K1 in the molten state, the more metal residues exist in the portion between the formed connecting leads 3, and the greater the adverse impact on the performance of the display panel 10.

[0122] During the formation of the plurality of connecting leads 3, by increasing the laser energy density so that the first etched portion K1 can be rapidly heated to a higher temperature under the action of the laser, the proportion of the material in the first etched portion K1 that is converted to a plasma state under the action of the laser can be increased, thereby reducing the proportion of the material in the first etched portion K1 that is in a molten state, which can effectively reduce etching residue. However, after the laser removes the first etched portion K1, the laser may pass through the substrate 1 and irradiate the film structure on the front surface. In this way, if the laser energy density is too high, it will cause damage to the film structure on the front surface.

[0123] In summary, from the perspective of protecting the front film structure, in order to avoid laser energy damaging the front film structure, the laser energy density acting on the conductive layer D cannot be too high during the formation of the connecting lead 3; however, from the perspective of reducing etching residues, the laser energy density acting on the conductive layer D needs to be maintained within a relatively high range. These two contradictory process requirements have severely compressed the laser etching process window.

[0124] Based on this, an embodiment of the present disclosure provides a display panel and a method for manufacturing the same to solve the above-mentioned problem of laser damage to the front film layer of the display panel. To clearly illustrate the solution of the present disclosure, the method for manufacturing the display panel is first introduced.

[0125] In some embodiments, the method for manufacturing the display panel 10 includes steps S1 to S3 .

[0126] S1. As shown in Figures 6, 7, and 8, a conductive layer D is formed on substrate 1. Substrate 1 includes a first surface 1a and a second surface 1b that oppose each other, and multiple side surfaces 1c connecting first surface 1a and second surface 1b, with at least one side surface 1c being a selected side surface 1cc. Conductive layer D extends from first surface 1a through selected side surface 1cc to second surface 1b. Conductive layer D has multiple first etched portions K1.

[0127] Exemplarily, the material of the conductive layer D has good thermal conductivity.

[0128] In some examples, the thermal conductivity of the material of the conductive layer D is in the range of 30 W / (m·K) to 60 W / (m·K).

[0129] Exemplarily, the material of the conductive layer D includes a metal material, or an alloy material or other material with good conductive properties.

[0130] In some examples, the material of the conductive layer D includes at least one of gold, silver, copper, titanium, aluminum, molybdenum, or nickel gold.

[0131] 9 , the conductive layer D has a plurality of first etched regions Q1 corresponding one-to-one to the plurality of first etched portions K1. After the plurality of first etched portions K1 of the conductive layer D are etched away, a plurality of connecting leads 3 can be formed. The space between any two adjacent connecting leads 3 corresponds to a first etched region Q1.

[0132] 6, 7, and 8, the conductive layer D includes a first portion D1 located on the first surface 1a, a second portion D2 located on the selected side surface 1cc, and a third portion D3 located on the second surface 1b. Each first etched portion K1 includes a first sub-etched portion K11, a second sub-etched portion K12, and a third sub-etched portion K13 that are sequentially connected.

[0133] The first portion D1 includes a plurality of first sub-etched portions K11 arranged side by side and spaced apart, the second portion D2 includes a plurality of second sub-etched portions K12 arranged side by side and spaced apart, and the third portion D3 includes a plurality of third sub-etched portions K13 arranged side by side and spaced apart. Removing the plurality of first sub-etched portions K11 yields a plurality of first lead segments 31 for connecting leads 3, removing the plurality of second sub-etched portions K12 yields a plurality of second lead segments 32 for connecting leads 3, and removing the plurality of third sub-etched portions K13 yields a plurality of third lead segments 33 for connecting leads 3.

[0134] S2. As shown in Figures 10 and 11 , an initial inorganic layer W is formed on the conductive layer. The initial inorganic layer W covers the upper surface of the conductive layer D and includes a plurality of second etched portions K2. As shown in Figures 8 and 10 , each second etched portion K2 is disposed opposite a first etched portion K1.

[0135] Illustratively, when the temperature is less than R1+(R2-R1) / 2, the light absorptivity of the material of the initial inorganic layer W is greater than the light absorptivity of the material of the conductive layer D for light within the same wavelength range. When the temperature is greater than or equal to R1+(R2-R1) / 2 and less than R2, the light absorptivity of the material of the initial inorganic layer W is less than the light absorptivity of the material of the conductive layer D for light within the same wavelength range.

[0136] Exemplarily, the melting point R2 of the material of the initial inorganic layer W is greater than the melting point R1 of the material of the conductive layer D, and R2-R1>0.

[0137] Exemplarily, the material of the initial inorganic layer W can be a light-transmitting material or a light-impermeable material.

[0138] Exemplarily, the initial inorganic layer W covers the upper surface of the conductive layer D, which means that the initial inorganic layer W at least covers the upper surface of the conductive layer D.

[0139] In some examples, as shown in Figure 10, the lower surface of the initial inorganic layer W overlaps with the upper surface of the conductive layer D, and in the orthographic projection onto the substrate 1, the initial inorganic layer W overlaps or approximately overlaps with the conductive layer D, and the boundary line of the initial inorganic layer W overlaps or approximately overlaps with the boundary line of the conductive layer D.

[0140] In some other examples, the initial inorganic layer W also covers the side surface of the conductive layer D. In the orthographic projection onto the substrate 1 , the conductive layer D falls within the range of the initial inorganic layer W, and the boundary line of the initial inorganic layer W surrounds the boundary line of the conductive layer D.

[0141] The surface of the conductive layer D opposite to the substrate 1 is the lower surface of the conductive layer D. Correspondingly, the surface of the conductive layer D opposite to the lower surface of the conductive layer D is the upper surface of the conductive layer D. The lower surface of the initial inorganic layer W is the surface where the initial inorganic layer W and the conductive layer D are in contact.

[0142] Exemplarily, as shown in FIG. 8 and FIG. 10 , the initial inorganic layer W has a plurality of second etched regions Q2 corresponding one-to-one to the plurality of second etched portions K2 .

[0143] 10 and 11 , the initial inorganic layer W includes a first portion W1 located on the first surface 1a, a second portion W2 located on the selected side surface 1cc, and a third portion W3 located on the second surface 1b. Each second etched portion K2 includes a fourth sub-etched portion K21, a fifth sub-etched portion K22, and a sixth sub-etched portion K23, which are sequentially connected.

[0144] The first portion W1 of the initial inorganic layer W includes a plurality of fourth sub-etching portions K21 arranged side by side and spaced apart, the second portion W2 includes a plurality of fifth sub-etching portions K22 arranged side by side and spaced apart, and the third portion W3 includes a plurality of sixth sub-etching portions K23 arranged side by side and spaced apart. Each fourth sub-etching portion K21 is disposed opposite to a first sub-etching portion K11, each fifth sub-etching portion K22 is disposed opposite to a second sub-etching portion K12, and each sixth sub-etching portion K23 is disposed opposite to a total of three sub-etching portions K13.

[0145] S3. As shown in Figures 12, 13, 14, and 15, a laser is applied to the plurality of second etched portions K2, and the plurality of first etched portions K1 and the plurality of second etched portions K2 are removed, thereby forming a plurality of connecting leads 3. The melting point R2 of the material of the initial inorganic layer W is higher than the melting point R1 of the material of the conductive layer D. Under the action of the laser, the first etched portions K1 melt before the second etched portions K2. As the second etched portions K2 melt, plasma is generated to bombard the first etched portions K1, thereby removing the first etched portions K1 and the second etched portions K2.

[0146] Illustratively, in step S3 , the laser is applied to the plurality of second etched portions K2 in sequence, or the laser is applied to the plurality of second etched portions K2 simultaneously.

[0147] It should be noted that no matter the laser is applied to the plurality of second etching portions K2 sequentially or simultaneously, the laser may be applied to the first portion W1 , the second portion W2 and the third portion W3 of the initial inorganic layer W sequentially or simultaneously.

[0148] This is merely an example of a possible implementation and does not limit the present disclosure. The specific method of applying laser to the plurality of second etched portions K2 to form the plurality of connecting leads 3 can be adaptively designed according to the actual structure and process design.

[0149] During the process of applying the laser to the second etching portion K2, the high-intensity energy of the laser beam will generate a large amount of heat. By adjusting the power and focusing conditions of the laser, the surface and interior of the laser-acting structure (e.g., the second etching portion K2, and the first etching portion K1 covered by it) can be locally heated. The portion that can generate local heating under the action of the laser energy is called the hot zone R. The temperature of the hot zone R gradually rises under the action of the laser, and the hot zone R can cover the first etching region Q1 and the second etching region Q2. Based on the high energy density and good directionality of the laser beam, the temperature of the hot zone R can be raised to a certain range in a short time, and the range covered by the hot zone R and the range of the laser energy distribution can be precisely controlled.

[0150] Since the laser heating range is precise, the laser beam can accurately transfer energy to the corresponding material areas (such as the second etching area Q2 and the first etching area Q1) without causing thermal effects on the surrounding areas (such as the portion of the initial inorganic layer W adjacent to the second etching area Q2). Therefore, it can accurately act on the target etching area (such as the etching area Q1 and the second etching area Q2) of the target film layer (such as the initial inorganic layer W and the conductive layer D) without affecting the rest of the parts.

[0151] In some embodiments, as shown in Figures 8 and 9, each first etch region Q1 includes a plurality of first sub-etch regions Q11(p) arranged sequentially along a set direction, and any two first sub-etch regions Q11(p) have the same or substantially the same size. Each first etch region Q1 includes a portion located on the first surface 1a of the substrate 1, a portion located on the selected side surface 1cc of the substrate 1, and a portion located on the second surface 1b of the substrate 1. Each portion of the first etch region Q1 includes at least one first sub-etch region Q11(p), and each sub-etch portion (e.g., the first sub-etch portion K11, the second sub-etch portion K12, and the third sub-etch portion K13) included in the first etch portion K1 corresponds to at least one first sub-etch region Q11(p).

[0152] The set direction is not unique. For example, the portion of the first etch region Q1 located on the first surface 1a of the substrate 1 includes a plurality of first sub-etch regions Q11(p) sequentially arranged along the second direction Y. The portion of the first etch region Q1 located on the first surface 1a of the substrate 1 includes at least one first sub-etch region Q11(p) sequentially arranged along the second direction Y. The portion located on the selected side surface 1cc of the substrate 1 includes at least one first sub-etch region Q11(p) sequentially arranged along the third direction Z. The portion located on the second surface 1b of the substrate 1 includes at least one first sub-etch region Q11(p) sequentially arranged, and the angle formed between the arrangement direction of the at least one sequentially arranged first sub-etch region Q11(p) and the second direction Y is in the range of 0° to 70°.

[0153] For example, as shown in FIG9 , the region C in FIG8 includes a first sub-etching region Q11(1), a first sub-etching region Q11(2), a first sub-etching region Q11(3), ..., a first sub-etching region Q11(p), and a first sub-etching region Q11(p+1) arranged in sequence. The size of each first sub-etching region Q11(p) is the same or substantially the same.

[0154] Any two adjacent first sub-etching regions Q11(p) and first sub-etching regions Q11(p+1) located on the same surface of the substrate 1 (for example, both located on the first surface 1a, or both located on the selected side surface 1cc, or both located on the second surface 1b) overlap, and as shown in Figure 9, the dimension d4 of the overlapping part of the first sub-etching region Q11(p) and the first sub-etching region Q11(p+1) along the set direction is greater than or equal to half of the dimension d5 of the first sub-etching region Q11(p) along the set direction.

[0155] In some embodiments, as shown in Figures 8 and 10, each second etch region Q2 includes a plurality of second sub-etch regions Q21(p), each second sub-etch region Q21(p) being disposed correspondingly to one first sub-etch region Q11(p). Each second etch region Q2 includes a portion located on the first surface 1a of the substrate 1, a portion located on the selected side surface 1cc of the substrate 1, and a portion located on the second surface 1b of the substrate 1. Each portion of the second etch region Q2 includes at least one second sub-etch region Q21(p), and each sub-etch portion (e.g., the fourth sub-etch portion K21, the fifth sub-etch portion K22, and the sixth sub-etch portion K23) included in the second etch portion K2 corresponds to at least one second sub-etch region Q21(p).

[0156] In some embodiments, taking the application of laser to any part of the first part W1, the second part W2 or the third part W3 of the initial inorganic layer W as an example, the application of laser to the second etching part K2 includes: applying the laser to multiple second sub-etching areas Q21 (p) in sequence according to the arrangement order of the multiple second sub-etching areas Q21 (p).

[0157] As described above, each second sub-etching area Q21(p) corresponds to a first sub-etching area Q11(p), therefore, the size of each second sub-etching area Q21(p) is the same or approximately the same, and any two adjacent second sub-etching areas Q21(p) and the second sub-etching area Q21(p+1) located on the same surface of the substrate 1 overlap, and the dimension d4 of the overlapping part of the second sub-etching area Q21(p) and the second sub-etching area Q21(p+1) along the set direction is greater than or equal to half of the dimension d5 of the second sub-etching area Q21(p) along the set direction.

[0158] In the process of applying the laser to multiple second sub-etching areas Q21(p) in sequence, the laser is irradiated to the initial inorganic layer W on the substrate 1 from three directions respectively. For example, the laser is irradiated from the first surface 1a and the second surface 1b of the substrate 1 along the third direction Z in Figure 11 to the first part W1 and the third part W3 of the initial inorganic layer W respectively, and the laser is irradiated from the side of the selected side surface 1cc of the substrate 1 along the second direction Y in Figure 11 to the second part W2 of the initial inorganic layer W.

[0159] When the laser is applied to a portion (such as the first portion W1, the second portion W2 or the third portion W3) of the initial inorganic layer W located on the same surface of the substrate 1 (such as the first surface 1a, the second surface 1b, or the selected side surface 1cc), due to the overlap between two adjacent second sub-etching areas Q21 (p), the multiple hot zones R formed when the laser acts on multiple second sub-etching areas Q21 (p) during the movement of the laser along the set path have good continuity. In this way, the shapes of the multiple connecting leads 3 finally formed can meet the design requirements, the side surfaces of the connecting leads 3 are basically flat, and the spacing between any two adjacent connecting leads 3 is basically the same, with good uniformity.

[0160] As previously mentioned, the hot zone R is the area affected by heat under the action of laser energy. The radiation radius of the laser energy is positively correlated with the size of the hot zone R and the laser energy level. Because the laser energy radiates linearly outward in all directions from the laser application position, it is understandable that when the laser is applied to the second etched portion K2 included in the initial inorganic layer W, the hot zone R formed within the initial inorganic layer W and the conductive layer D will not be a rectangular parallelepiped area, but rather a region closer to a hemispherical area.

[0161] It is understandable that if the size of the overlapping portion of any two adjacent second sub-etching areas Q21(p) is too small, on the one hand, it may cause the portion between the two adjacent connecting leads 3 that should be removed to not be etched away, resulting in a short circuit; on the other hand, the side surface of the connecting lead 3 finally formed may also be uneven, affecting the conductive performance of the connecting lead 3 and causing reliability problems of the connecting lead 3; and if the size of the overlapping portion is too large, it will cause a waste of laser processing efficiency.

[0162] In summary, the size of the overlapping part of any two adjacent second sub-etching areas Q21 (p) needs to be maintained within the set range. The specific overlapping size can be adaptively designed according to the energy of the laser used, the length and width of the connecting lead 3, and the spacing between the connecting leads 3. This is only an exemplary explanation and does not serve as a limitation to the present disclosure.

[0163] For example, the first etched portion K1 is within the range of laser energy, but the laser does not directly act on the first etched portion K1. Instead, the laser acts on the first etched portion K1 through the second etched portion K2. Thus, the laser energy acting on the first etched portion K1 accounts for a relatively small proportion of the total laser energy, and the laser energy acting on the first etched portion K1 cannot meet the etching requirements. Therefore, the laser energy only heats the first etched portion K1, and the first etched portion K1 is not directly removed by the laser.

[0164] Exemplarily, the material of the conductive layer D includes titanium and copper.

[0165] For example, the conductive layer D includes a copper metal layer and a titanium metal layer stacked in sequence from one side of the substrate 1 .

[0166] For another example, the conductive layer D includes a titanium metal layer, a copper metal layer, and a titanium metal layer stacked in sequence from one side of the substrate 1 .

[0167] This is merely an illustrative description of possible implementations and is not intended to limit the present disclosure.

[0168] Since the first etched portion K1 melts before the second etched portion K2, when the second etched portion K2 melts, the titanium atoms and copper atoms in the first etched portion K1, which have already transformed from a solid state to a molten state, are already in an extremely active state. Under the bombardment of the plasma ionized by the second etched portion K2, the kinetic energy of the titanium atoms and copper atoms in the molten state of the first etched portion K1 continues to increase, and eventually obtain an escape velocity. At this time, the second etched portion K2 also transforms from a solid state to a molten state, losing its restraint effect on the first etched portion K1. The first etched portion K1 breaks through the restraint of the second etched portion K2 and splashes out completely.

[0169] In the preparation method of the display panel 10 provided in some embodiments of the present disclosure, the laser does not directly act on the first etching portion K1 of the conductive layer D, but acts on the second etching portion K2 of the initial inorganic layer W on the conductive layer D. Under the action of laser energy, the second etching portion K2 ionizes a large amount of plasma to bombard the first etching portion K1 in a molten state, so that the kinetic energy of the atoms in the first etching portion K1 in the molten state increases under the bombardment of the plasma, and the kinetic energy of the plasma is converted into the kinetic energy of the atoms in the first etching portion K1, so that the atoms in the first etching portion K1 obtain an escape velocity, can break through the restraint of the second etching portion K2 and fly out of the hot zone R, and complete the removal of the first etching portion K1 through the kinetic energy conversion.

[0170] When the laser is applied to each second sub-etching region Q21 , the first sub-etching region Q11 and the second sub-etching region Q21 are located in a hot region R generated by the laser energy.

[0171] In some embodiments, as shown in FIG15 , during the process of forming a plurality of connecting leads 3 using the above-mentioned preparation method, affected by the range of the heat zone R, some residual corners may remain in the first etched portion K1 on the side close to the substrate 1 and close to the connecting lead 3, but the size of these residual corners can be controlled by adjusting the laser energy.

[0172] For example, as shown in Figure 15, the first etched portion K1 has residual corners on the side close to the substrate 1 and close to the connecting lead 3. In the connecting lead 3 finally formed, the bottom width of the connecting lead 3 formed by the portion adjacent to the first etched portion K1 is greater than the width of its top, that is, the width of the connecting lead 3 on the side close to the substrate 1 is greater than the width of the side away from the substrate 1.

[0173] In some examples, as shown in Figures 15, 16, and 17, the orthographic projection of the upper surface of the connecting lead 3 on the substrate 1 falls within the orthographic projection of its lower surface on the substrate 1, and a gap j is present between the upper surface of the connecting lead 3 and the boundary of the orthographic projection of the lower surface of the connecting lead 3 on the substrate 1 in a direction perpendicular to the extension direction of the connecting lead 3. The gap j ranges from 0 to 3 μm.

[0174] The comparison between the boundaries of the orthographic projections of the upper and lower surfaces of the connecting lead 3 on the substrate 1 can be a comparison between the boundary lines of the orthographic projections of different parts of the connecting lead 3, such as the first lead segment 31, the second lead segment 32 or the third lead segment 33, on the surface of the substrate 1 where they are located.

[0175] The first lead segment 31, the second lead segment 32, and the third lead segment 33 are manufactured using the same manufacturing method and therefore have corresponding common structural features. For example, as shown in Figures 15, 16, and 17, a third gap j3 is defined between the boundaries of the orthographic projections of the upper and lower surfaces of the third lead segment 33 onto the second surface 1b.

[0176] 15, 16 and 17, the upper and lower surfaces of the first lead segment 31 have a first interval j1 between their orthographic projections on the first surface 1a, and the upper and lower surfaces of the second lead segment 32 have a second interval j2 between their orthographic projections on the selected side surface 1cc.

[0177] In the process of removing the first etching portion K1 and the second etching portion K2, the laser acts on each second sub-etching area Q21 in sequence, and each second sub-etching area Q21 is opposite to a first sub-etching area Q11. In the process of the laser acting on a single second sub-etching area Q21, the portion of the second etching portion K2 corresponding to the second sub-etching area Q21 and the portion of the first etching portion K1 corresponding to the first sub-etching area Q11 can be removed.

[0178] In some embodiments, in step S3, the process of applying laser to a single second sub-etching area Q21 includes the following stages A0 to A4. For ease of explanation, in the following description of stages A0 to A4, the first etching portion K1 refers to the portion of the first etching portion K1 corresponding to a first sub-etching area Q11, and the second etching portion K2 refers to the portion of the second etching portion K2 corresponding to a second sub-etching area Q21.

[0179] A0. At the start time, as shown in FIG12 , the temperature of the first etched portion K1 is the same as the temperature of the second etched portion K2.

[0180] Exemplarily, a portion of the first etched portion K1 corresponding to the first sub-etched region Q11 and a portion of the second etched portion K2 corresponding to the second sub-etched region Q21 are both solid.

[0181] A1. In the first stage, as shown in Figure 12, the laser absorption rate of the second etched portion K2 is a, and the laser absorption rate of the first etched portion K1 is b. With a>b, the laser energy is absorbed by the second etched portion K2, causing the temperature of the second etched portion K2 to rise, and the temperature of the hot zone R to rise. As the temperature in the second etched portion K2 rises, it transfers heat to the first etched portion K1, causing the temperature of the first etched portion K1 to rise accordingly.

[0182] For example, in the first stage, because the laser absorption rate of the second etched portion K2 is much higher than that of the first etched portion K1, most of the laser energy is absorbed by the second etched portion K2, and the temperature of the second etched portion K2 increases under the action of the laser. Because the material of the conductive layer D has good thermal conductivity, the heat absorbed by the second etched portion K2 can be effectively transferred to the first etched portion K1. That is, in the first stage, under the action of the laser energy, the temperature of the second etched portion K2 gradually rises and is transferred to the first etched portion K1.

[0183] Taking the conductive layer D including titanium and copper as an example, before the temperature of the hot zone R rises to the melting point R1 of the material of the conductive layer D, more than 90% of the laser energy is absorbed by the second etching portion K2. The second etching portion K2 acts as an absorption layer, absorbing the laser energy and causing the temperature of the hot zone R to rise. During this period, the temperature of the second etching portion K2 is greater than the temperature of the first etching portion K1, and the heat generated by the laser is conducted from the second etching portion K2 to the first etching portion K1.

[0184] Exemplarily, the wavelength range of the laser is 200 nm to 1200 nm.

[0185] In some examples, the wavelength of the laser light ranges from 100 nm to 400 nm.

[0186] For example, a laser with a wavelength of 355 nm is used. When the temperature is less than R1+(R2-R1) / 2, the laser absorptivity of the second etched portion K2 is greater than that of the first etched portion K1. For example, at room temperature (e.g., 15°C to 25°C), the absorptivity of the second etched portion K2 for 355 nm laser light is approximately 90%, while the absorptivity of the first etched portion K1 for 355 nm laser light is approximately 30%. The absorptivity of the second etched portion K2 for laser light is much greater than that of the first etched portion K1.

[0187] When the laser absorption rate of the second etching part K2 is 90%, the laser power acting on the first etching part K1 is only 10%. Based on this, when the laser absorption rate of the first etching part K1 is 30%, the first etching part K1 can only absorb 3% of the laser energy, which cannot meet the etching requirements and will only heat the first etching part K1.

[0188] A2. In the second stage, as shown in Figure 13, the temperature of the hot zone R rises to a value greater than R1 and less than R2. The first etched portion K1 is molten, while the second etched portion K2 remains solid. The laser absorptivity of the first etched portion K1 in the second stage increases compared to the first stage, but is still lower than that of the second etched portion K2.

[0189] For example, the melting point of titanium is 1668°C, and the melting point of copper is 1083°C. In the second stage A2, after the temperature of the hot zone R rises to 1668°C, the temperature of the hot zone R is greater than the melting point of copper and reaches the melting point of titanium. At this time, the absorption rate of the laser light by the first etched portion K1 is approximately 50%, which is greater than the absorption rate of the laser light in the first stage A1.

[0190] A3. In the third stage, as shown in FIG13 , the temperature of the hot zone R rises compared to that in the second stage A2, and is still lower than R2; the absorptivity of the first etched portion K1 to the laser increases compared to that in the second stage A2, and the absorptivity of the first etched portion K1 to the laser is higher than that of the second etched portion K2 to the laser, and the second etched portion K2 is still in a solid state, confining the first etched portion K1 to the first sub-etched area Q11.

[0191] Illustratively, during the period when the temperature of the first etching portion K1 and the second etching portion K2 rises to the melting point R1 of the material of the conductive layer D and continues to rise, and has not reached the melting point R2 of the material of the initial inorganic layer W, the first etching portion K1 transforms from a solid state to a molten state, and the second etching portion K2 remains in a solid state.

[0192] For example, in the third stage A3, when the temperature of the hot zone R continues to rise to 2000°C, the absorption rate of the first etched portion K2 continues to increase with the increase in the temperature of the hot zone R, and in the third stage A3, the absorption rate of the first etched portion K2 to the laser is greater than the absorption rate of the second etched portion K2 to the laser.

[0193] In some examples, in the third stage A3, while the first etched portion K1 in the molten state continues to absorb laser energy, at least a portion of the first etched portion K1 is converted into a plasma state, the first etched portion K1 exists in both the molten state and the plasma state, and the proportion of the plasma state portion of the first etched portion K1 is much higher than that of the molten state portion; or the entire first etched portion K1 is converted into a plasma state.

[0194] Because the melting point R2 of the material of the second etched portion K2 is much higher than the melting point R1 of the material of the first etched portion K1, under the action of the laser, the first etched portion K1, after melting, remains bound by the second etched portion K2 within the first etched area Q1 and continues to absorb laser energy. Thus, during the laser etching process to remove the first etched portion K1, the molten first etched portion K1 can continue to absorb laser energy and transform into a plasma state, thereby reducing the proportion of the molten portion.

[0195] Compared with applying the laser directly to the first etching portion K1, when the first etching portion K1 separates from the first etching area Q1, the proportion of the first etching portion K1 in the molten transition state is reduced, which can effectively avoid the etching residue problem caused by the secondary solidification in the first etching area Q1 of the portion of the first etching portion K1 in the molten transition state that fails to completely separate from the first etching area Q1, thereby improving the etching quality.

[0196] Taking the material of the initial inorganic layer W including zirconium dioxide as an example, based on the high melting point of zirconium dioxide, before the temperature of the hot zone R rises to 2700°C, the second etching portion K2 covers the first etching portion K1 in a solid state, acting as a binding layer to bind the first etching portion K1 within the first sub-etching area Q11.

[0197] When the temperature is less than R1+(R2-R1) / 2, the light absorptivity of the material of the initial inorganic layer W is less than the light absorptivity of the material of the conductive layer D for light within the same wavelength range.

[0198] After the temperature of the hot zone R rises to the melting point R1 of the conductive layer D material and before it reaches the melting point R2 of the initial inorganic layer W material, the substantial energy generated by the laser beam acting on the second etched portion K2 is trapped within it. The temperature of the second etched portion K2 equals that of the first etched portion K1, and there is no temperature difference between the first and second etched portions K1 and K2. Therefore, the molten first etched portion K1 cannot conduct heat. Simultaneously, during this period, the first etched portion K1 transitions from a solid state to a liquid state. The titanium and copper atoms within the first etched portion K1 are extremely active and possess the kinetic energy to break free from the first etched portion Q1. However, the second etched portion K2, in its solid form, covers the molten first etched portion K1, acting as a confinement layer to confine the molten first etched portion K1 within the first etched portion Q1. Therefore, localized spattering of the molten first etched portion K1 is prevented. The heat generated by the laser beam is concentrated in the hot zone R, and the entire hot zone R behaves like a continuously heated pressure cooker.

[0199] A4. In the fourth stage, as shown in Figures 14 and 15, the temperature of the hot zone R is greater than R2; the second etched portion K2 is transformed from solid to liquefied and ionized into plasma, which bombards the first etched portion K1; the first etched portion K1 breaks through the restraint of the second etched portion K2, and the first etched portion K1 and the second etched portion K2 fly out.

[0200] When the temperature in the hot zone R rises to the melting point R2 of the material of the initial inorganic layer W and thereafter, the second etching portion K2 continues to absorb laser energy and begins to melt. At the same time, the second etching portion K2 continues to absorb laser energy and, under the action of the laser energy, quickly ionizes plasma with sufficient kinetic energy to bombard the first etching portion K1 in the molten state.

[0201] At the point in time when the temperature of the hot zone R rises to the melting point R2 of the material of the initial inorganic layer W, the titanium and copper atoms within the first etched portion K1 are already in an extremely active transition state, and the second etched portion K2 begins to melt, gradually transforming from a solid to a liquid state. The second etched portion K2's ability to bind the first etched portion K1 gradually weakens. As the temperature of the hot zone R rises, the further the hot zone R temperature exceeds the melting point R2 of the material of the initial inorganic layer W, the weaker the second etched portion K2's ability to bind the first etched portion K1. Simultaneously, as the second etched portion K2 melts, it ionizes and generates plasma that bombards the first etched portion K1, completing the removal of the first etched portion K1 through kinetic energy conversion.

[0202] On the one hand, the bond energy of the material of the second etched portion K2 (initial inorganic layer W) is positively correlated with the laser energy used. The higher the bond energy of the material of the second etched portion K2, the higher the laser energy used. The kinetic energy of the plasma ionized by the second etched portion K2 under the action of the laser = the photon energy of the laser used - the bond energy of the material of the second etched portion K2. Therefore, the bond energy of the material of the second etched portion K2 is less than the photon energy, otherwise ionization cannot be achieved, and the bombardment effect on the first etched portion K1 cannot be achieved. When the parameters of the laser used are the same, the smaller the bond energy of the material of the second etched portion K2, the greater the kinetic energy of the plasma ionized by the second etched portion K2 under the action of the laser. The more kinetic energy the first etched portion K1 obtains under the bombardment of the plasma ionized by the second etched portion K2, and the better the etching removal effect of the first etched portion K1.

[0203] On the other hand, considering the impact interference of other atoms on the first etched portion K1, the greater the ion mass of the second etched portion K2, the better the impact effect of the ionized plasma. However, excessively high laser energy may cause the second etched portion K2 to instantly liquefy before the hot zone R is formed, thus preventing it from achieving its binding effect. Therefore, the laser energy used should be within a set range. Too high or too low will adversely affect the removal effect of the first etched portion K1.

[0204] Illustratively, the difference between the melting point R2 of the material of the initial inorganic layer W and the melting point R1 of the material of the conductive layer D is greater than or equal to 500°C, ie, R2-R1≥500°C.

[0205] In some examples, because the melting point R2 of the material of the initial inorganic layer W is greater than R1, R2 ≥ 1668 + 500°C, that is, the melting point of the material of the initial inorganic layer W must be at least greater than or equal to 2168°C. Thus, due to the significant difference in melting points between the first etching portion K1 and the second etching portion K2, when the temperature of the first etching portion K1 reaches its melting point and begins to transform into a molten state, it remains confined within the first etching region Q1 by the solid second etching portion K2 and continues to absorb laser energy, thereby increasing the proportion of the first etching portion K1 that is converted to a plasma state under the action of the laser. This allows for better removal of the first etching portion K1 when it loses the confinement effect of the second etching portion K2 and "escapes" from the first etching region Q1.

[0206] In some examples, as shown in FIG15 , after the first etched portion K1 and the second etched portion K2 are removed by the laser, some residues of the first etched portion K1 may remain. The more the melting point R2 of the material of the second etched portion K2 (initial inorganic layer W) exceeds the melting point R1 of the material of the first etched portion K1 (conductive layer D), that is, the greater the difference between R2-R1, the more energy is stored in the hot zone R before the first etched portion K1 breaks through the restraint of the second etched portion K2, and the greater the kinetic energy of the first etched portion K1. In this way, when the first etched portion K1 breaks through the restraint of the second etched portion K2 and splashes out, the more complete the "explosion" is and the less residues of the first etched portion K1 are.

[0207] For example, in the above preparation method, the pulse width of the laser used is in the order of picoseconds. The pulse frequency of the laser is, for example, 106 Hz. Based on this, the single pulse energy of the laser is about 0.8×10 -6 J, under the action of laser, it takes 4.2×10 -6 J, it can be considered that in the aforementioned stages A0 to A4, a series of processes such as heating, ionization, and sputtering of the first etched portion K1 and the second etched portion K2 will be completed under the impact of about 10 laser pulses, which takes about 10 seconds. -5 s.

[0208] When the laser acts on a single second etching area Q2, the laser acts on multiple second sub-etching areas Q21 in sequence, and a series of hot zones R are formed by moving the laser head. The etching of the second etching part K2 is completed by stacking the hot zones R.

[0209] The area of ​​a single hot zone is about 4×10 -10 m 2 When two adjacent second sub-etching regions Q21 overlap by 50%, the theoretical processing efficiency of the above preparation method can reach 10 -5 mm / s, the width of the first etching area Q1 (and / or the second etching area Q2) is 3×10 -5 m, the moving speed of the laser head is 0.3 m / s, and when the length of the first etching area Q1 (and / or the second etching area Q2) is 2 m, the processing can be completed within 10 seconds in theory.

[0210] In summary, the method for manufacturing the display panel 10 provided by some embodiments of the present disclosure effectively prevents damage to the front film structure while greatly improving the efficiency of manufacturing the connecting leads 3 during the manufacturing process of the display panel 10 .

[0211] Some embodiments of the present disclosure provide methods for fabricating a display panel 10. This involves forming an initial inorganic layer W on a conductive layer D, applying a laser to a second etched portion K2 of the initial inorganic layer W. The laser ionizes the second etched portion K2 to generate plasma, which bombards the first etched portion K1, completing the etching of the first etched portion K1. Using this fabrication method, the plasma generated by the ionization of the second etched portion K2 acts on the first etched portion K1, resulting in less etching residue in the first etched portion K1, compared to directly applying a laser to the first etched portion K1.

[0212] At the same time, since the laser acts on the initial inorganic layer W, the first etched portion K1 is covered by the second etched portion K2 before the first etched portion K1 is removed. Therefore, by adopting this preparation method, the utilization rate of the laser energy is increased during the laser etching process, and under the shielding of the initial inorganic layer W, the risk of etching damage to the remaining film layer structures in the display panel 10 during the formation of the connecting lead 3 caused by laser etching is effectively avoided.

[0213] In some embodiments, in step S3, as shown in FIG13 , multiple first etched portions K2 included in the conductive layer D are removed to obtain multiple connecting leads 3, and multiple second etched portions K2 included in the initial inorganic layer W are removed to obtain an inorganic layer 7.

[0214] In some embodiments, after step S3 , as shown in FIG16 , step S4 is further included, in which the inorganic layer 7 is removed.

[0215] Exemplarily, the material of the initial inorganic layer W includes zirconium dioxide.

[0216] In some examples, the initial inorganic layer W includes zirconium dioxide nanopowder uniformly distributed in a pure water-based sol.

[0217] The two ends of the connecting lead 3 are electrically connected to the front driving circuit layer 8 and the back circuit board 20 respectively. The two ends of the connecting lead 3 need to be exposed and bound to the rest of the parts. Therefore, in step S4, the removal of the inorganic layer 7 can be to remove the entire inorganic layer 7; or only to remove the two ends of the connecting lead 3 that need to be bound to the rest of the parts. The rest of the inorganic layer 7 still covers the upper surface of the connecting lead 3. Since inorganic materials have a good effect of isolating water and oxygen, the retained part of the inorganic layer 7 can serve as a protective layer to protect the connecting lead 3.

[0218] In other examples, after the connecting lead 3 is bound to the driving circuit layer 8 on the front and the circuit board 20 on the back, a protective layer can be formed on the other side of the inorganic layer 7 away from the connecting lead 3. The protective layer covers the connecting lead 3 to isolate it from water and oxygen, preventing the connecting lead 3 from contacting water and oxygen in the air and causing water and oxygen corrosion.

[0219] In some embodiments, in step S3, as shown in Figure 15, in the process of forming multiple connecting leads 3 using the above-mentioned preparation method, under the influence of factors such as the range of the hot zone R and the lattice structure of the material of the conductive layer D, a small amount of residue may exist in the first etched portion K1 on the surface of the substrate 1 at the bottom of the hot zone R, that is, in the multiple connecting leads 3 finally formed, a conductive island pattern 9 may exist on the side of any connecting lead 3 close to the first etched zone Q1, and the conductive island pattern 9 is electrically insulated from the connecting lead 3.

[0220] Exemplarily, the conductive island pattern 9 is a remaining portion of the first etched portion K1 , and there is a gap between the conductive island pattern 9 and the connecting lead 3 .

[0221] In some examples, within any first etched region Q1, that is, within the gap region between any two adjacent connecting leads 3, the width of the conductive island pattern 9 is less than half the width of the gap region. The width of the gap region refers to the distance between any two adjacent connecting leads 3.

[0222] In some embodiments, after step S3 , as shown in FIG. 15 and FIG. 16 , the method further includes step S5 of removing the conductive island pattern 9 .

[0223] For example, when removing the conductive island pattern 9, a laser is used to etch and remove the conductive island pattern 9. Since the conductive island pattern 9 is smaller in volume than the first etching portion K1, the energy of the laser used when removing the conductive island pattern 9 can be within a lower energy range. Even if the laser passes through the substrate 1 and irradiates the front film structure, the laser energy is within the tolerance range of the front film structure, and thus will not cause damage to the front film structure.

[0224] It should be noted that there is no requirement for the order of step S4 and step S5 in the preparation process, and step S4 and step S5 can be performed or not.

[0225] An embodiment of the present disclosure further provides a display panel 10 , which can be manufactured by the aforementioned manufacturing method.

[0226] In some embodiments, as shown in FIG3 , a display panel 10 includes a substrate 1, a plurality of first electrodes 2, and a plurality of connecting leads 3. The substrate 1 includes a first surface 1a and a second surface 1b that oppose each other, and a plurality of side surfaces 1c connecting the first surface 1a and the second surface 1b, with at least one side surface 1c being a selected side surface 1cc. The plurality of first electrodes 2 are disposed on the first surface 1a and adjacent to the selected side surface 1cc.

[0227] Each connecting lead 3 includes a first lead segment 31, a second lead segment 32, and a third lead segment 33, which are connected in sequence. The first lead segment 31 is disposed on the first surface 1a of the substrate 1 and is electrically connected to one of the plurality of first electrodes 2. The second lead segment 32 is disposed on the selected side surface 1cc of the substrate 1. The third lead segment 33 is disposed on the second surface 1b of the substrate 1.

[0228] In some embodiments, as shown in Figures 15, 16 and 17, the orthographic projection of the upper surface of at least one connecting lead 3 on the substrate 1 falls within the orthographic projection range of its lower surface on the substrate 1, and there is a gap j between the boundary of the orthographic projection of the upper surface of the connecting lead 3 and the lower surface of the connecting lead 3 on the substrate 1.

[0229] Exemplarily, the interval j between the boundary of the orthographic projection of the upper surface of the connecting lead 3 and the lower surface of the connecting lead 3 on the substrate 1 can be the interval j between the boundary of the orthographic projection of the upper surface and the lower surface of at least one of the first lead segment 31, the second lead segment 32 and the third lead segment 33 of the connecting lead 3 on the substrate 1.

[0230] Exemplarily, the interval j ranges from 0 to 3 μm.

[0231] For example, the interval j between the boundary of the orthographic projection of the upper surface of the connection lead 3 and the lower surface of the connection lead 3 on the substrate 1 is 0, 0.7 μm, 1 μm, or 3 μm.

[0232] In some examples, as shown in FIG15 , FIG16 , and FIG17 , the upper surface of the third lead segment 33 of the connecting lead 3, which is farthest from the second surface 1 b, has a fifth boundary BJ5 as its orthographic projection on the second surface 1 b, and the lower surface of the third lead segment 33, which is closest to the second surface 1 b, has a sixth boundary BJ6 as its orthographic projection on the second surface 1 b. A third interval j3 is defined between the fifth boundary BJ5 and the sixth boundary BJ6. The size of the third interval j3 can be 0, 0.7 μm, 1 μm, or 3 μm.

[0233] The connecting lead 3 is formed, for example, by the preparation method described above. It is understandable that, since they are made by the same preparation method, the first lead segment 31 , the second lead segment 32 and the third lead segment 33 of the connecting lead 3 have the same or similar structural features.

[0234] 15, 16, and 17, in other examples, the upper surface of the second lead segment 32 furthest from the selected side surface 1cc has a third boundary BJ3 as an orthographic projection on the selected side surface 1cc, and the lower surface of the second lead segment 32 closest to the selected side surface 1cc has a fourth boundary BJ4 as an orthographic projection on the selected side surface 1cc. A second interval j2 is defined between the third boundary BJ3 and the fourth boundary BJ4. The second interval j2 may be 0, 0.5 μm, 1 μm, or 3 μm.

[0235] 15, 16, and 17, in yet other examples, the upper surface of the first lead segment 31 furthest from the first surface 1a has a first boundary BJ1 as its orthographic projection on the first surface 1a, and the lower surface of the first lead segment 31 closest to the first surface 1a has a second boundary BJ2 as its orthographic projection on the first surface 1a. A first interval j1 is defined between the first boundary BJ1 and the second boundary BJ2. The third interval j3 can be 0, 0.5 μm, 1 μm, or 3 μm.

[0236] It should be noted that when forming multiple connecting leads 3, the first lead segment 31, the second lead segment 32 and the third lead segment 33 can all be prepared by setting an initial inorganic layer W on the conductive layer D, applying a laser to the second etching portion K2 of the initial inorganic layer W, and removing the second etching portion K2 and the first etching portion K1; alternatively, the third lead segment 33 can be prepared by applying a laser to the second etching portion K2 to remove the second etching portion K2 and the first etching portion K1, and the first lead segment 31 and the second lead segment 32 can be prepared by directly applying a laser to the first etching portion K1 for etching and removal.

[0237] This is merely an illustrative description of possible implementations and is not intended to limit the present disclosure.

[0238] In the process of preparing the connecting lead 3 using the preparation method described above (for example, steps S1 to S3), since the thermal conductivity of the material of the initial inorganic layer W is relatively low, the heat transfer in the hot zone R mainly depends on the conductive layer D. Therefore, the material of the conductive layer D, that is, the material of the connecting lead 3, needs to have good thermal conductivity while having low resistance and good electrical conductivity.

[0239] In some embodiments, the material of the connecting lead 3 includes a metal material, or an alloy material or other material with good electrical conductivity.

[0240] Exemplarily, the thermal conductivity of the material of the connecting lead 3 is in the range of 30 W / (m·K) to 60 W / (m·K).

[0241] Exemplarily, the material of the connecting lead 3 includes at least one of gold, silver, copper, titanium, aluminum, molybdenum or nickel gold.

[0242] In some examples, the material of the connecting lead 3 includes titanium and copper, for example.

[0243] For example, the connection lead 3 includes a copper metal layer and a titanium metal layer stacked in sequence from one side of the substrate 1 .

[0244] For another example, the connecting lead 3 includes a titanium metal layer, a copper metal layer, and a titanium metal layer stacked in sequence from one side of the substrate 1 .

[0245] During the preparation of the connecting lead 3, since titanium metal has good thermal conductivity, heat can be well transferred from the second etched portion K2 to the first etched portion K1. In this way, even if the laser does not directly act on the first etched portion K1, the first etched portion K1 can still be transformed from a solid state to a molten state under the action of the laser energy, and continue to absorb laser energy to be transformed into a molten state and a plasma state and have the kinetic energy to rush out of the first etched area Q1.

[0246] This is merely an illustrative description of possible implementations and is not intended to limit the present disclosure.

[0247] In some embodiments, the third lead segment 33 has a plurality of third cross sections JM3 parallel to the second surface 1b. There are two third cross sections JM3 among the plurality of third cross sections JM3. As shown in FIG18 , the area of ​​the third cross section JM3 relatively closer to the second surface 1b is larger than the area of ​​the third cross section JM3 farther away from the second surface 1b.

[0248] Exemplarily, the interval e between the boundary lines of the two third sections JM3 (eg, the interval between the two boundary lines in the second direction Y shown in FIG. 18 ) is less than or equal to the third interval j3, 0≤e≤j3.

[0249] The first lead segment 31 , the second lead segment 32 and the third lead segment 33 of the connecting lead 3 are all manufactured by the same preparation method and therefore have the same or similar structural features.

[0250] Referring to Figure 18, in some other embodiments, the second lead segment 32 has a plurality of second cross sections JM2 parallel to the selected side surface 1cc, there are two second cross sections JM2 among the plurality of second cross sections JM2, and the area of ​​the second cross section JM2 relatively closer to the selected side surface 1cc is larger than the area of ​​the second cross section JM2 farther away from the selected side surface 1cc.

[0251] Exemplarily, the interval between boundary lines of the orthographic projections of the two second cross sections JM2 on the substrate 1 is less than or equal to the second interval j2.

[0252] Referring to Figure 18, in some further embodiments, the first lead segment 31 has multiple first cross-sections JM1 parallel to the first surface 1a, there are two first cross-sections JM1 among the multiple first cross-sections JM1, and the area of ​​the first cross-section JM1 relatively closer to the first surface 1a is larger than the area of ​​the first cross-section JM1 farther away from the first surface 1a.

[0253] Exemplarily, the interval between the boundary lines of the two first cross sections JM1 is less than or equal to the first interval j1.

[0254] In some embodiments, at least one of the first lead segment 31, the second lead segment 32, and the third lead segment 33 has two opposite side edges CB in a cross section perpendicular to its extension direction. As shown in FIG17 , the side edges CB are composed of a plurality of sequentially connected sub-segments ZD, each of which is an arc segment, or each of which is a straight line segment, or some of the sub-segments ZD are arc segments and other sub-segments ZD are straight line segments.

[0255] Exemplarily, as shown in FIG17 , for any side edge CB, some of the sub-segments ZD are arc segments, and other sub-segments ZD are straight line segments, wherein the part of the sub-segments ZD that are arc segments are closer to the substrate 1 than the other part of the sub-segments ZD that are straight line segments.

[0256] Exemplarily, the connecting lead 3 is made using the aforementioned steps S1 to S3, as shown in Figures 13, 14 and 15. The shape of the side surface of the connecting lead 3 is related to factors such as the shape of the hot zone R generated under the action of the laser energy and the thickness of the connecting lead 3. Therefore, the side surface of the connecting lead 3 finally formed may be a plane, or an arc surface, or a plane and an arc surface connected in sequence.

[0257] Exemplarily, as shown in FIG17 , the third lead segment 33 has opposite side edges CB(1) and CB(2) in a cross section perpendicular to its extension direction, and the side edge CB(1) is, for example, composed of sequentially connected sub-segments ZD(1) and ZD(2).

[0258] In some examples, as shown in FIG17 , subsegment ZD( 1 ) is a straight line segment, and subsegment ZD( 2 ) is an arc segment.

[0259] In other examples, subsegment ZD(1) is a straight line segment, and subsegment ZD(2) is a straight line segment.

[0260] In some other examples, sub-segment ZD(1) is an arc segment, and sub-segment ZD(2) is an arc segment.

[0261] Exemplarily, when the multiple sub-segments ZD included in any side edge CB include straight line segments and arc segments, and the number of straight line segments and / or arc segments is greater than 1, any two arc segments are connected by at least one arc segment, any two straight line segments are connected by at least one straight line segment, and the arc segments are closer to the substrate 1 than the straight line segments; or, any two straight line segments are connected by at least one arc segment; or, any two arc segments are connected by at least one straight line segment.

[0262] In some embodiments, as shown in FIG17 , for the same side CB, there are at least two sub-segments ZD, and the slope or curvature of the sub-segment ZD closer to the substrate 1 is smaller than the slope or curvature of the sub-segment ZD farther from the substrate 1 .

[0263] Exemplarily, as shown in FIG17 , the side CB includes a sub-segment ZD( 1 ) and a sub-segment ZD( 2 ).

[0264] In some examples, as shown in FIG17 , subsegment ZD( 1 ) is a straight line segment, and subsegment ZD( 2 ) is an arc segment. The curvature of the straight line is 0, so the curvature of subsegment ZD( 1 ) is smaller than the curvature of subsegment ZD( 2 ).

[0265] In other examples, subsegment ZD(1) is a straight line segment, subsegment ZD(2) is a straight line segment, and the slope of subsegment ZD(1) is smaller than the slope of subsegment ZD(2).

[0266] Taking the third lead segment 33 of the connecting lead 3 as an example, for example, the extension direction of the sub-segment ZD(1) is perpendicular to the second surface 1b of the substrate 1, and the extension direction of the sub-segment ZD(2) forms an angle less than 90° with the second surface 1b of the substrate 1. The slope of the sub-segment ZD(1) is 0, so the slope of the sub-segment ZD(1) is smaller than the slope of the sub-segment ZD(2).

[0267] For another example, the angle formed by the extension direction of sub-segment ZD(1) and the second surface 1b of the substrate 1 is greater than the angle formed by the extension direction of sub-segment ZD(2) and the second surface 1b of the substrate 1, and the slope of sub-segment ZD(1) is less than the slope of sub-segment ZD(2).

[0268] In some other examples, subsegment ZD(1) is an arc segment, subsegment ZD(2) is an arc segment, and the curvature of subsegment ZD(1) is smaller than the curvature of subsegment ZD(2).

[0269] 15 , 19 and 20 , the display panel 10 further includes an inorganic layer 7 disposed on one side of the upper surface of the plurality of connection leads 3 . The inorganic layer 7 covers at least the upper surface of the second lead segments 32 .

[0270] In other embodiments, as shown in FIG. 19 and FIG. 20 , the inorganic layer 7 further covers the upper surfaces of portions of the first lead segment 31 and the third lead segment 33 close to the selected side surface 1 cc.

[0271] Exemplarily, the material of the inorganic layer 7 can be a light-transmitting material or a light-impermeable material.

[0272] Exemplarily, the material of the inorganic layer 7 includes zirconium dioxide.

[0273] For example, the material of the inorganic layer 7 includes zirconium dioxide nanopowder uniformly distributed in a pure water-based sol.

[0274] After forming a plurality of connecting leads 3 using steps S1 to S3 described above, the initial inorganic layer W can be completely removed, or as shown in FIG19 , only the portion of the connecting leads 3 that needs to be bound to the remaining structure (eg, circuit board 20 , etc.) can be removed.

[0275] As shown in Figure 19, the portion of the initial inorganic layer W located in the binding area BB is removed to obtain the inorganic layer 7. The portion of the connecting lead 3 located in the binding area BB is exposed for bonding to the circuit board 20, and the inorganic layer 7 serves as a protective layer covering the upper surface of the remaining portion of the connecting lead 3.

[0276] In some embodiments, the bond energy of the material of the inorganic layer 7 is smaller than the photon energy of light with a wavelength range of 200 nm to 1200 nm.

[0277] Referring to the description of the preparation method of the connecting lead in the previous text, the bond energy of the material of the inorganic layer 7 needs to be lower than the photon energy of the laser used to prepare the connecting lead 3. This is beneficial for ionizing the etched and removed part of the inorganic layer 7 when the laser acts on the inorganic layer 7.

[0278] At the same time, the bond energy of the material of the inorganic layer 7 needs to match the laser energy used in the laser etching process. The higher the bond energy of the material of the inorganic layer 7, the higher the laser energy used in the laser etching process. Excessive laser energy may cause the inorganic layer 7 to instantly liquefy before the hot zone is formed, and its binding function will be lost.

[0279] Therefore, the bond energy of the material of the inorganic layer 7 needs to be maintained within a set range, and the energy of the laser used when preparing the connecting lead 3 also needs to be maintained within a set range.

[0280] Photon energy E = hv(1)

[0281] Where v is the frequency of light, in seconds; h is Planck's constant, in joule-seconds, h≈6.626×10 -34 J.s.

[0282] Frequency of light v = c / λ(2)

[0283] Where λ is the wavelength of light, in meters; c is the speed of light in a vacuum, in meters per second, c≈3×108m / s.

[0284] From equations (1) and (2), we can get: E = hc / λ, in joules. Here, the frequency of light is related to its wavelength. It is understood that light of different wavelengths has different photon energies.

[0285] Taking the laser wavelength of 355nm as an example, Then, the bond energy of the material of the inorganic layer 7 should be less than 5.6×10 -19 J. In this way, during the preparation of the connecting lead 3, a better etching effect can be obtained and etching residue can be avoided.

[0286] In some embodiments, the melting point R1 of the material of the plurality of connecting leads 3 is lower than the melting point R2 of the material of the inorganic layer 7 , and R2 − R1 ≥ 500° C.

[0287] In some embodiments, when the temperature is less than R1+(R2-R1) / 2, the light absorptivity of the material of the inorganic layer 7 is greater than the light absorptivity of the material of the plurality of connecting leads 3 for light within the same wavelength range. When the temperature is greater than or equal to R1+(R2-R1) / 2 and less than R2, the light absorptivity of the material of the inorganic layer 7 is less than the light absorptivity of the material of the plurality of connecting leads 3 for light within the same wavelength range.

[0288] Illustratively, when the temperature is less than R1+(R2-R1) / 2, the light absorptivity of the material of the inorganic layer 7 is greater than the light absorptivity of the material of the plurality of connecting leads 3 for light in the wavelength range of 100 nm to 400 nm. When the temperature is greater than or equal to R1+(R2-R1) / 2 and less than R2, the light absorptivity of the material of the inorganic layer 7 is less than the light absorptivity of the material of the plurality of connecting leads 3 for light in the wavelength range of 100 nm to 400 nm.

[0289] In some embodiments, as shown in FIG16 , the display panel 10 further includes a conductive island pattern 9 spaced apart from the connecting leads 3. A spacing j is defined between any two adjacent connecting leads 3. The spacing j includes a fourth spacing j4 between any two adjacent first lead segments 31, a fifth spacing j5 between any two adjacent second lead segments 32, and a sixth spacing j6 between any two adjacent third lead segments 33. The conductive island pattern 9 is located at least in one of the fourth spacing j4, the fifth spacing j5, and the sixth spacing j6. The width of the conductive island pattern 9 is less than half the width of the spacing j.

[0290] It should be noted that the width of the interval j refers to the distance between two adjacent connecting leads 3. Correspondingly, the fourth interval j4 refers to the distance between two adjacent first lead segments 31; the fifth interval j5 refers to the distance between two adjacent second lead segments 32; and the sixth interval j6 refers to the distance between two adjacent third lead segments 33.

[0291] Exemplarily, as shown in FIG16 , the conductive island pattern 9 is located at the sixth interval j6 , the width of the sixth interval j6 is, for example, 30 μm, and the width of the conductive island pattern 9 is less than 15 μm.

[0292] Referring to the description of the preparation method in the previous text, under the influence of factors such as the range of the hot zone R and the lattice structure of the material of the conductive layer D, a small amount of residue may exist in the first etched portion K1 on the surface of the substrate 1 at the bottom of the hot zone R, that is, among the multiple connecting leads 3 finally formed, a conductive island pattern 9 may exist between any two adjacent connecting leads 3, and the conductive island pattern 9 is electrically insulated from the connecting leads 3.

[0293] Since the area of ​​the conductive island pattern 9 in the gap region between two adjacent connecting leads 3 is very small and can be ignored, after forming the connecting leads 3, the conductive island pattern 9 can be etched away by applying a laser, or the step of etching away the conductive island pattern 9 is not required.

[0294] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A display panel, comprising: A substrate, comprising a first surface and a second surface opposite to each other, and a plurality of side surfaces connecting the first surface and the second surface, at least one side surface being a selected side surface; a plurality of first electrodes disposed on the first surface and close to the selected side surface; A plurality of connecting leads, each connecting lead comprising a first lead segment, a second lead segment and a third lead segment connected in sequence, the first lead segment being disposed on the first surface and electrically connected to one of the plurality of first electrodes; the second lead segment being disposed on the selected side surface, and the third lead segment being disposed on the second surface; wherein, The orthographic projection of the upper surface of the first lead segment farthest from the first surface on the first surface has a first boundary, the orthographic projection of the lower surface of the first lead segment closest to the first surface on the first surface has a second boundary, and a first interval exists between the first boundary and the second boundary; and / or, The upper surface of the second lead segment farthest from the selected side surface has a third boundary in the orthographic projection of the selected side surface, the lower surface of the second lead segment closest to the selected side surface has a fourth boundary in the orthographic projection of the selected side surface, and there is a second interval between the third boundary and the fourth boundary; and / or, The upper surface of the third lead segment farthest from the second surface has a fifth boundary in its orthographic projection on the second surface, the lower surface of the third lead segment closest to the second surface has a sixth boundary in its orthographic projection on the second surface, and a third interval is provided between the fifth boundary and the sixth boundary.

2. The display panel according to claim 1, wherein: The first lead segment has a plurality of first cross sections parallel to the first surface, wherein there are two first cross sections among the plurality of first cross sections, and an area of ​​the first cross section closer to the first surface is larger than an area of ​​the first cross section farther from the first surface; and / or, The second lead segment has a plurality of second cross sections parallel to the selected side surface, wherein there are two second cross sections among the plurality of second cross sections, and an area of ​​the second cross section closer to the selected side surface is larger than an area of ​​the second cross section farther from the selected side surface; and / or, The third lead segment has a plurality of third cross sections parallel to the second surface. There are two third cross sections among the plurality of third cross sections, and an area of ​​the third cross section closer to the second surface is larger than an area of ​​the third cross section farther from the second surface.

3. The display panel according to claim 1 or 2, wherein: At least one of the first lead segment, the second lead segment and the third lead segment has two opposite side edges in a cross section perpendicular to its extension direction, and the side edges are composed of a plurality of sub-segments connected in sequence, each of the sub-segments is an arc segment, or each of the sub-segments is a straight line segment, or a part of the sub-segments are arc segments and the other part of the sub-segments are straight line segments.

4. The display panel according to claim 3, wherein: For the same side, there are at least two sub-segments, and the slope or curvature of the sub-segment that is relatively closer to the substrate is smaller than the slope or curvature of the sub-segment that is relatively farther from the substrate.

5. The display panel according to claim 3 or 4, wherein: For any side, some of the multiple subsegments are arc segments, and another part of the subsegments are straight line segments, wherein the part of the subsegments that are arc segments are closer to the substrate than the other part of the subsegments that are straight line segments.

6. The display panel according to any one of claims 1 to 5, wherein: The thermal conductivity of the material of the plurality of connecting leads is in the range of 30 W / (m·K) to 60 W / (m·K).

7. The display panel according to any one of claims 1 to 6, wherein: The display panel further includes: An inorganic layer is disposed on one side of the upper surface of the plurality of connecting leads; the inorganic layer at least covers the upper surface of the second lead segment.

8. The display panel according to claim 7, wherein: The inorganic layer also covers upper surfaces of portions of the first lead segment and the third lead segment that are adjacent to the selected side surface.

9. The display panel according to claim 7 or 8, wherein: The bond energy of the material of the inorganic layer is smaller than the photon energy of light in the wavelength range of 200nm to 1200nm.

10. The display panel according to any one of claims 7 to 9, wherein: The melting point R1 of the material of the plurality of connecting leads is lower than the melting point R2 of the material of the inorganic layer; R2-R1≥500°C.

11. The display panel according to claim 10, wherein: When the temperature is less than R1+(R2-R1) / 2, for light within the same wavelength range, the light absorptivity of the material of the inorganic layer is greater than the light absorptivity of the material of the plurality of connecting leads; When the temperature is greater than or equal to R1+(R2-R1) / 2 and less than R2, for light in the same wavelength range, the light absorptivity of the material of the inorganic layer is lower than the light absorptivity of the material of the plurality of connecting leads.

12. The display panel according to any one of claims 7 to 11, wherein: The material of the inorganic layer includes zirconium dioxide.

13. The display panel according to any one of claims 1 to 12, wherein: The first interval, the second interval and the third interval have a value range of 0 to 3 μm.

14. The display panel according to any one of claims 1 to 13, wherein: There is a gap between any two adjacent connecting leads, and the gap includes: a fourth interval between any two adjacent first lead segments; a fifth interval between any two adjacent second lead segments; a sixth interval between any two adjacent third lead segments; The display panel further includes: a conductive island pattern located at at least one of the fourth interval, the fifth interval, and the sixth interval; The conductive island pattern is spaced apart from the connecting lead, and a width of the conductive island pattern is less than half of a width of the space.

15. A display device, comprising: The display panel according to any one of claims 1 to 14; and, A circuit board is electrically connected to the plurality of connecting leads.

16. A splicing display device, comprising: A plurality of display panels as claimed in any one of claims 1 to 14; or, The device comprises a plurality of display devices as claimed in claim 15.

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