Optical modulator

Abstract

An optical modulator, comprising: a first dielectric layer (10); a second dielectric layer (20) located on the first dielectric layer (10), a waveguide structure (210) being provided in the second dielectric layer (20); an insulating layer (30) located on the second dielectric layer (20); and a signal transmission structure (40) comprising a first conductive structure (410) and a second conductive structure (420), wherein the first conductive structure (410) is located on the insulating layer (30), the second conductive structure (420) is located in the second dielectric layer (20), and the second conductive structure (420) is electrically connected to the waveguide structure (210) and the first conductive structure (410) by means of via holes (50); wherein at least one of the first conductive structure (410) and the second conductive structure (420) has a target conductive structure, the target conductive structure is a periodic structure, and a path distance of an electrical signal transmitted in the extension direction of the target conductive structure is greater than a path distance of an optical signal transmitted in the extension direction of the waveguide structure (210).

Description

optical modulator

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on September 18, 2023, with application number 202322533198.7 and invention name “Optical Modulator”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The utility model relates to the technical field of optical communications, in particular to an optical modulator. Background Art

[0003] In silicon-based integrated optoelectronic systems, traveling-wave electrode modulators based on SOI (silicon-on-insulator) technology typically consist of an optical waveguide load and a traveling-wave electrode. Electromagnetic waves are transmitted between the traveling-wave electrodes, while an optical carrier is transmitted in the load optical waveguide. During the transmission of the optical carrier and electromagnetic wave, the interaction between the electromagnetic wave and the optical carrier causes the phase of the optical carrier to change, thereby modulating the electrical signal into an optical signal.

[0004] In related technologies, silicon-based traveling-wave electrode modulators are primarily fabricated using the CMOS (Complementary Metal-Oxide-Semiconductor) SOI process, which offers low cost and ease of large-scale production. However, this structure suffers from a mismatch in the group refractive index between electromagnetic waves and optical waves, leading to an optoelectronic mismatch within the modulator and degrading its modulation performance. Utility Model Content

[0005] Based on this, it is necessary to provide an optical modulator to address the above technical problems, thereby improving the matching degree of the optical modulator's transmission speed of electro-optical signals, thereby improving the performance of the optical modulator in modulating optical signals.

[0006] In order to achieve the above-mentioned object, the present application provides an optical modulator, comprising:

[0007] a first dielectric layer;

[0008] a second dielectric layer, located on the first dielectric layer, wherein a waveguide structure is provided in the second dielectric layer;

[0009] an insulating layer, located on the second dielectric layer;

[0010] The signal transmission structure includes a first conductive structure and a second conductive structure, wherein the first conductive structure is located on the insulating layer, the second conductive structure is located in the second dielectric layer, and the second conductive structure is electrically connected to the waveguide structure and the first conductive structure through vias; wherein,

[0011] At least one of the first conductive structure and the second conductive structure has a target conductive structure, the target conductive structure is a periodic structure, and the path distance of the electrical signal transmitted in the extension direction of the target conductive structure is greater than the path distance of the optical signal transmitted in the extension direction of the waveguide structure.

[0012] In one embodiment, the signal transmission structure includes a plurality of first conductive structures; one of the first conductive structures is adjacent to the insulating layer and is electrically connected to the second conductive structure through a via penetrating the insulating layer, and each of the first conductive structures is stacked in a direction from the first dielectric layer to the insulating layer.

[0013] In one embodiment, the signal transmission structure includes a plurality of second conductive structures; one end of one of the second conductive structures is electrically connected to the first conductive structure through a via, and the other end is electrically connected to the waveguide structure through a via, and each first conductive structure is stacked in a direction from the insulating layer to the first dielectric layer.

[0014] In one embodiment, the signal transmission structure includes a plurality of the first conductive structures and a plurality of the second conductive structures, and the total number of the first conductive structures and the second conductive structures ranges from 6 to 8 layers.

[0015] In one embodiment, the optical modulator further includes a third dielectric layer, the third dielectric layer is located on the insulating layer, and the second conductive structure is disposed in the third dielectric layer.

[0016] In one embodiment, the insulating layer and the third dielectric layer are made of the same material.

[0017] In one embodiment, the first dielectric layer is a silicon layer or a glass material layer.

[0018] In one embodiment, the first dielectric layer is formed on the second dielectric layer by bonding.

[0019] In one embodiment, the first conductive structure includes two first sub-conductive structures, the two first sub-conductive structures have the target conductive structure, and the two first sub-conductive structures are arranged opposite to each other or opposite to each other.

[0020] In one embodiment, the second conductive structure includes two second sub-conductive structures, each of the second sub-conductive structures has the target conductive structure, and the two second sub-conductive structures are arranged opposite to each other or opposite to each other.

[0021] In one embodiment, the target conductive structure includes a main conductive structure and a plurality of side conductive structures periodically arranged along an extension direction of the waveguide structure; wherein each of the side conductive structures is electrically connected to the main conductive structure.

[0022] The above-mentioned optical modulator includes a signal transmission structure and a first dielectric layer, a second dielectric layer and an insulating layer stacked in sequence, wherein a waveguide structure is provided in the second dielectric layer, and the signal transmission structure includes a first conductive structure and a second conductive structure, the first conductive structure is located on the insulating layer, the second conductive structure is located in the second dielectric layer, and the second conductive structure is electrically connected to the waveguide structure and the first conductive structure respectively through vias. Since at least one of the first conductive structure and the second conductive structure has a target conductive structure with a periodic structure, and the path distance of the electrical signal transmitted in the extension direction of the target conductive structure is greater than the path distance of the optical signal transmitted in the extension direction of the waveguide structure, compared with the transmission path of the optical signal, the target conductive structure increases the transmission path of the electrical signal, thereby slowing down the transmission of the electrical signal. Due to the effect of speed, the speed at which the optical modulator transmits electrical signals can be consistent with the speed at which it transmits optical signals, thereby improving the speed matching of the optical modulator in transmitting electrical and optical signals, thereby improving the modulation performance of the optical modulator for optical signals. In addition, the waveguide structure, the first conductive structure, and the second conductive structure in the optical modulator of the present application constitute a new "sandwich" structure, and the first dielectric layer replaces the substrate layer in the CMOS-SOI process in the related art. The first dielectric layer does not form parasitic capacitance with the waveguide structure. Compared with the old optical modulator (substrate layer, waveguide structure layer, and oxide layer) in which parasitic capacitance exists between the substrate layer and the waveguide structure, the optical modulator provided by the present application increases the electro-optical bandwidth of the optical modulator, thereby improving the modulation performance of the optical modulator for optical signals. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] FIG1 is a schematic diagram of an XY cross-sectional structure of an optical modulator provided by an embodiment;

[0024] FIG2 is a schematic diagram of an XY cross-sectional structure of an optical modulator provided by an embodiment;

[0025] 3 to 10 are schematic diagrams of XZ cross-sectional structures of a conductive structure provided by one embodiment;

[0026] FIG11 is a schematic diagram of an XZ cross-sectional structure of a first conductive structure provided by an embodiment;

[0027] FIG12 is a schematic diagram of a three-dimensional structure of a modulator provided by an embodiment.

[0028] Description of reference numerals:

[0029] 10-first dielectric layer, 20-second dielectric layer, 210-waveguide structure, 211-optical waveguide, 212-slab structure, 213-contact structure, 30-insulating layer, 40-signal transmission structure, 410-first conductive structure, 411-first sub-conductive structure, 420-second conductive structure, 421-second sub-conductive structure, 50-via, 60-third dielectric layer, 710-main conductive structure, 720-side conductive structure. DETAILED DESCRIPTION

[0030] To facilitate understanding of the present invention, a more comprehensive description of the present invention will be provided below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of the present invention. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present invention.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which this invention pertains. The terms used herein in the specification of this invention are for the purpose of describing specific embodiments only and are not intended to limit this invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0032] In the description of the present invention, it should be understood that the terms "upper", "lower", "vertical", "horizontal", "inside", "outside", etc., indicating the orientation or position relationship, are based on the method or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0033] As mentioned in the background, the traveling-wave electrode electro-optical modulators of related art suffer from a mismatch between the group refractive indices of electromagnetic waves and optical waves. This is generally due to the relatively large refractive index of light propagating in a silicon waveguide, which results in a slower light wave speed and a higher group refractive index. However, since the dielectric constant of the surrounding medium is relatively low, electromagnetic waves propagate faster and have a lower group refractive index. This results in the modulator transmitting light waves slower than the electromagnetic waves, leading to an electro-optical mismatch and degrading the modulator's optical signal modulation performance. To address this issue, the present application provides a modulator that achieves consistency in the speed of electro-optical signal transmission, thereby improving the modulator's modulation performance.

[0034] In one embodiment, as shown in FIG. 1 , an optical modulator is provided. The optical modulator includes a first dielectric layer 10 , a second dielectric layer 20 , an insulating layer 30 and a signal transmission structure 40 .

[0035] The second dielectric layer 20 is located on the first dielectric layer 10. A waveguide structure 210 is provided in the second dielectric layer 20. The waveguide structure 210 may include an optical waveguide 211, a slab structure 212, and a contact structure 213. The optical waveguide 211 is electrically connected to the contact structure 213 via the slab structure 212. The optical waveguide 211 is used to transmit optical signals, while the slab structure 212 and the contact structure 213 are used to transmit electrical signals.

[0036] The insulating layer 30 is located on the second dielectric layer 20. The signal transmission structure 40 may include a first conductive structure 410 and a second conductive structure 420. The signal transmission structure 40 is used to transmit electrical signals. The first conductive structure 410 is adjacent to the insulating layer 30. The first conductive structure 410 penetrates the insulating layer 30 and is electrically connected to the second conductive structure 420 via a via 50. The first conductive structure 410 may serve as a traveling wave electrode and be electrically connected to the outside. For example, the optical modulator may further include a third dielectric layer 60, which is located on the insulating layer 30, and the first conductive structure 410 is disposed within the third dielectric layer. Optionally, the third dielectric layer 60 may be the same layer as the insulating layer 30. The second conductive structure 420 is located in the second dielectric layer 20. The second conductive structure 420 is electrically connected to the waveguide structure 210 via the via 50. Specifically, the second conductive structure is electrically connected to the contact structure 213 via the via 50. The via 50 may be a continuous panel structure, a conductive support column structure with periodic gaps, or any other suitable structure. No limitation is imposed on the structure, height, etc. of the via 50.

[0037] At least one of the first conductive structure 410 and the second conductive structure 420 has a target conductive structure. For example, the first conductive structure 410 has the target conductive structure, or the second conductive structure 420 has the target conductive structure, or both the first conductive structure 410 and the second conductive structure 420 have the target conductive structure. In actual applications, whether the first conductive structure 410 and the second conductive structure 420 have the target conductive structure can be determined based on the specific application scenario, and no limitation is imposed herein.

[0038] The target conductive structure is a periodic structure. Furthermore, the path distance for an electrical signal transmitted in the direction in which the target conductive structure extends is greater than the path distance for an optical signal transmitted in the direction in which the waveguide structure 210 extends. The target conductive structure can be understood as a structure used to increase the transmission path of the electrical signal in the direction in which the conductive structure extends. The target conductive structure can be either entirely or partially periodic, as described below.

[0039] Exemplarily, the first dielectric layer 10 may be a silicon layer or a glass material layer, where glass materials include but are not limited to silicon oxide, boron oxide, etc. The first dielectric layer 10 acts as a supporting silicon substrate. Exemplarily, the second dielectric layer 20 and the third dielectric layer 60 may be any one or more of any suitable dielectric layers, such as a silicon nitride layer and a silicon dioxide layer. Exemplarily, the second dielectric layer 20 and the third dielectric layer 60 may be formed by a multilayer deposition of silicon dioxide and silicon nitride. Exemplarily, the insulating layer 30 may be an oxide layer, such as a silicon dioxide layer. Exemplarily, the insulating layer 30 and the third dielectric layer 60 may be formed from the same material, for example, both the insulating layer 30 and the third dielectric layer 60 may be silicon dioxide layers. Exemplarily, the waveguide structure 210 may be a silicon structure. The signal transmission structure 40 may be a metal structure, such as copper or aluminum. The materials of the various layers and structures are not limited herein.

[0040] The optical modulator includes a signal transmission structure 40 and a first dielectric layer 10, a second dielectric layer 20 and an insulating layer 30 stacked in sequence, wherein the second dielectric layer 20 is provided with a waveguide structure 210, and the signal transmission structure 40 includes a first conductive structure 410 and a second conductive structure 420. The first conductive structure 410 is located on the insulating layer 30, and the second conductive structure 420 is located in the second dielectric layer 20. The second conductive structure 420 is electrically connected to the waveguide structure 210 and the first conductive structure 410 through a via 50. At least one of the electrical structures 420 has a target conductive structure with a periodic structure, and the path distance of the electrical signal transmitted in the extension direction of the target conductive structure is greater than the path distance of the optical signal transmitted in the extension direction of the waveguide structure 210. Compared with the transmission path of the optical signal, the target conductive structure increases the transmission path of the electrical signal, which slows down the transmission speed of the electrical signal, so that the speed of the optical modulator transmitting the electrical signal can be consistent with the speed of transmitting the optical signal, thereby improving the speed matching of the optical modulator transmitting the electrical and optical signals, thereby improving the modulation performance of the optical modulator on the optical signal.

[0041] In practical applications, the optical modulator provided in the above embodiment can be obtained by etching, depositing, and other processes on an SOI wafer based on CMOS-SOI technology. The SOI wafer includes a substrate layer, an insulating layer 30, and a crystalline silicon layer stacked in sequence. First, the crystalline silicon layer is etched to form a waveguide structure 210 on the insulating layer 30. The waveguide structure 210 includes a waveguide 211, a slab structure 212, and a contact structure 213. Then, through a doping process, the waveguide structure 210 is doped with carriers to form an electrical connection with the metal layer above. A metal deposition process is then used to form a first conductive structure 410 electrically connected to the waveguide structure 210, and a second dielectric layer 20 is deposited on the insulating layer 30. The first conductive structure 410 is located within the second dielectric layer 20. In this way, the waveguide structure 210 and the first conductive structure 410 form an old-style optical modulator in the related art, which includes a substrate layer, an insulating layer 30 and a second dielectric layer 20, wherein the second dielectric layer 20 is provided with a first conductive structure 410 electrically connected to the waveguide structure 210.

[0042] Based on the above process, the present application can form the first dielectric layer 10 on the second dielectric layer 20 by bonding, and remove the original substrate layer. After inverting the structure, the insulating layer 30 is etched to form a via 50, and a second conductive structure 420 is formed on the insulating layer 30 by a metal deposition process, and a third dielectric layer 60 is deposited on the insulating layer 30, and the second conductive structure 420 is located in the third dielectric layer 60. The second conductive structure 420 is electrically connected to the first conductive structure 410 through the via 50. Based on this, a new optical modulator with a "sandwich" structure is formed, wherein the "sandwich" structure refers to the waveguide structure 210 and the signal transmission structure 40, and the signal transmission structure 40 includes the first conductive structure 410 and the second conductive structure 420.

[0043] The novel optical modulator comprises a first dielectric layer 10, a second dielectric layer 20, an insulating layer 30, and a third dielectric layer 60 stacked from bottom to top, as well as a waveguide structure 210, a first conductive structure 410, and a second conductive structure 420 disposed in the second dielectric layer 20. In conventional optical modulators with a substrate layer, the silicon layer where the waveguide structure 210 resides is separated from the substrate layer by only the thickness of the insulating layer 30, which is typically less than 3 μm thick. Furthermore, the substrate layer itself has a certain resistivity (1-3000 ohm-cm), making it a conductor with low electrical conductivity. Furthermore, because the waveguide structure 210 is made of doped silicon, its electrical properties resemble those of a conductor. This results in the formation of a planar capacitor between the silicon layer where the waveguide structure 210 resides and the substrate layer. This planar capacitor has significant parasitic capacitance, significantly reducing the bandwidth and impedance of the optical modulator, thereby degrading the performance of the traveling-wave electrode modulator. In this regard, the new optical modulation layer provided in the embodiment of the present application removes the original substrate layer, so that the silicon layer where the waveguide structure 210 is located can no longer form a flat plate with the substrate layer. That is, the parasitic capacitance between the waveguide structure 210 and the substrate is eliminated, avoiding the problem of reduced bandwidth and impedance of the optical modulator caused by parasitic capacitance, thereby improving the modulation performance of the optical modulator.

[0044] In one embodiment, as shown in FIG2 , the signal transmission structure 40 may include a plurality of first conductive structures 410 . One first conductive structure 410 is located on the insulating layer 30 and is electrically connected to the second conductive structure 420 through a via 50 . Each first conductive structure 410 is stacked and arranged through the via 50 along a direction from the first dielectric layer 10 to the insulating layer 30 . In FIG4 , the signal transmission structure 40 includes two first conductive structures 410 as an example. The two first conductive structures 410 are a first conductive structure a and a second conductive structure b, respectively. The first conductive structure a is located on the insulating layer 30 , and is electrically connected to the first conductive structure b and the second conductive structure 420 through the via 50 , respectively. The second conductive structure b is located on the side of the first conductive structure a away from the insulating layer 30 .

[0045] Continuing with FIG2 , the signal transmission structure 40 may include multiple second conductive structures 420. A second conductive structure 420 is electrically connected to the first conductive structure 410 via a via 50, and each first conductive structure 410 is stacked and arranged through the vias 50 in a direction from the insulating layer 30 toward the first dielectric layer 10. FIG4 illustrates an example of a signal transmission structure 40 including three second conductive structures 420. The three second conductive structures 420 are a second conductive structure a, a second conductive structure b, and a second conductive structure c. The second conductive structure a is electrically connected to the waveguide structure 210 and the first conductive structure 410, respectively, through the vias 50. The second conductive structures a, b, and c are stacked and arranged in a direction from the insulating layer 30 toward the first dielectric layer 10 (i.e., the negative direction of the Y axis) through the vias 50.

[0046] Optionally, the total number of the first conductive structure 410 and the second conductive structure 420 may be 6 layers, 7 layers, or 8 layers, which may be specifically set according to actual application requirements and process conditions and is not limited here.

[0047] Please continue to refer to Figure 2. The first waveguide structure 410 may include two first sub-conductive structures 411. The two first sub-conductive structures 411 are symmetrically arranged along the extension direction of the waveguide structure 210, respectively located on both sides of the waveguide structure 210, and respectively electrically connected to the waveguide structure 210 through vias 50.

[0048] The second waveguide structure 420 may include two second sub-conductive structures 421 , which are symmetrically arranged along the extension direction of the waveguide structure 210 , respectively located on both sides of the waveguide structure 210 , and respectively electrically connected to the first sub-conductive structure 411 through the vias 50 .

[0049] In the above-mentioned optical modulator, the first waveguide structure 410 may include two symmetrically arranged first sub-conductive structures 411, and the second waveguide structure 420 may include two symmetrically arranged second sub-conductive structures 421, wherein any two sub-waveguide structures in the same layer may have a periodic target conductive structure, which can better modulate the optical signal transmitted by the waveguide structure 210, and can also increase the transmission path of the electrical signal in the extension direction of the target conductive structure, so that the speed at which the optical modulator transmits the electrical signal is consistent with the speed at which the optical signal is transmitted, thereby improving the speed matching of the optical modulator transmitting the electrical and optical signals, thereby improving the modulation performance of the optical modulator on the optical signal.

[0050] As shown in Figures 3 and 4, the target conductive structure can be an overall periodic structure, and can have a sawtooth waveform structure, an S-shaped structure, or any other suitable periodic structure. Taking the first conductive structure 410 having an S-shaped target conductive structure as an example, Figure 3 shows a schematic structural diagram of the first conductive structure 410 in an XZ cross-section. Since the first conductive structure 410 has two first sub-conductive structures 411, when the first conductive structure 410 has an S-shaped target conductive structure, both first sub-conductive structures 411 have the S-shaped target conductive structure shown in Figure 3.

[0051] As shown in Figures 5 to 10, the target conductive structure may include a main conductive structure 710 and a plurality of side conductive structures 720 periodically arranged along the extension direction of the waveguide structure 210. Each side conductive structure 720 is electrically connected to the main conductive structure 710. The side conductive structures 720 may be arranged adjacent to each other or spaced apart. Each side conductive structure 720 may have the same shape, and may be any one of a rectangular, triangular, and zigzag shape. The zigzag shape may be any curved shape, such as a T-shape or an ﹂-shape. For example, as shown in Figures 5 and 8, the side conductive structures 720 are rectangular in shape, and are spaced apart in a periodic pattern. As shown in Figures 6 and 9, the side conductive structures 720 are triangular in shape, and may be spaced apart or adjacent to each other. As shown in Figures 7 and 10, the side conductive structures 720 are T-shaped, and are spaced apart.

[0052] It should be noted that the side conductive structures 720 shown in Figures 5 to 7 are symmetrically arranged on both sides of the main conductive structure 710, forming an overall periodic target conductive structure. The side conductive structures 720 shown in Figures 8 to 10 are arranged on the same side of the main conductive structure 710 in the direction of electrical signal transmission, forming a partially periodic target conductive structure. Among them, the side conductive structures 720 can be located on the left side of the main conductive structure 710 as shown in Figure 10, or on the right side of the main conductive structure 710 as shown in Figures 8 and 9, without limitation. Based on this conductive structure 60, the electro-optical mismatch problem caused by inconsistent group refractive index in the modulator is solved, and the modulation performance of the modulator is improved.

[0053] In the above-mentioned optical modulator, the side conductive structures 720 are arranged in an overall periodic arrangement or a partial periodic arrangement on the main conductive structure 710, which can increase the transmission path distance of the electrical signal in the extension direction of the target conductive structure, thereby slowing down the transmission speed of the electrical signal. This allows the speed at which the modulator transmits electrical signals to be consistent with the speed at which it transmits optical signals, thereby improving the matching degree of the modulator's transmitted electrical and optical signals, thereby solving the problem of the modulator's electrical-optical mismatch and improving the modulator's performance in modulating optical signals.

[0054] As can be seen from the embodiments shown in Figures 1 and 2 above, the first conductive structure 410 and the second conductive structure 420 can each include two symmetrically arranged sub-conductive structures. That is, the first conductive structure 410 can include two symmetrically arranged first sub-conductive structures 411, and the second conductive structure 420 can include two symmetrically arranged second sub-conductive structures 421. Any two sub-conductive structures arranged in the same layer can each have a target conductive structure. For example, the two first sub-conductive structures 411 have the target conductive structure, or the two second sub-conductive structures 421 have the target conductive structure, or the two first sub-conductive structures 411 and the two second sub-conductive structures 421 have the target conductive structure.

[0055] When the side conductive structures 720 are disposed on the same side of the main conductive structure 710 in the direction in which the conductive structure extends, the side conductive structures 720 in two sub-conductive structures on the same layer can be disposed opposite each other or opposite each other. The side conductive structures 720 in two sub-conductive structures disposed on the same layer can have the same or different shapes, as long as the speeds at which the optical modulator transmits electrical and optical signals match.

[0056] For example, when two first sub-conductive structures 411 have a periodic target conductive structure, the side conductive structures 720 in the two first sub-conductive structures 411 can be arranged opposite each other or opposite each other. As shown in FIG11 , the side conductive structures 720 of the two first sub-conductive structures 411 (a first sub-conductive structure 411 a and a first sub-conductive structure 411 b) are arranged opposite each other. The side conductive structures 720 of the first sub-conductive structure 411 a are arranged to the right of the main conductive structure 710 in the direction in which the conductive structure extends, and the side conductive structures 720 of the first sub-conductive structure 411 a are rectangular in shape. The side conductive structures 720 of the first sub-conductive structure 411 b are arranged to the left of the main conductive structure 710 in the direction in which the conductive structure extends, and the side conductive structures 720 of the first sub-conductive structure 411 b are triangular in shape. As shown in FIG12 , the side conductive structures 720 of the two first sub-conductive structures 411 (the first sub-conductive structure 411 a and the first sub-conductive structure 411 b ) are arranged back to back, wherein the side conductive structure 720 of the first sub-conductive structure 411 a is arranged on the left side of the main conductive structure 710 in the direction in which the conductive structure extends, and the side conductive structure 720 of the first sub-conductive structure 411 a is triangular in shape, and the side conductive structure 720 of the first sub-conductive structure 411 b is arranged on the right side of the main conductive structure 710 in the direction in which the conductive structure extends, and the side conductive structure 720 of the first sub-conductive structure 411 b is triangular in shape.

[0057] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0058] The above-described embodiments merely represent several implementations of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. It should be noted that a person skilled in the art would be able to make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements fall within the scope of protection of the present invention. Therefore, the scope of protection of the present utility model patent shall be determined by the appended claims.

Claims

1. An optical modulator, characterized in that: include: a first dielectric layer; A second dielectric layer, located on the first dielectric layer, wherein a waveguide structure is provided in the second dielectric layer; an insulating layer, located on the second dielectric layer; A signal transmission structure, comprising a first conductive structure and a second conductive structure, wherein the first conductive structure is located on the insulating layer, the second conductive structure is located in the second dielectric layer, and the second conductive structure is electrically connected to the waveguide structure and the first conductive structure through vias; wherein, At least one of the first conductive structure and the second conductive structure has a target conductive structure, the target conductive structure is a periodic structure, and a path distance for an electrical signal to be transmitted in an extension direction of the target conductive structure is greater than a path distance for an optical signal to be transmitted in an extension direction of the waveguide structure.

2. The optical modulator according to claim 1, characterized in that The signal transmission structure includes a plurality of the first conductive structures; one of the first conductive structures is adjacent to the insulating layer and is electrically connected to the second conductive structure through a via penetrating the insulating layer, and each of the first conductive structures is stacked along a direction from the first dielectric layer to the insulating layer.

3. The optical modulator according to claim 1, wherein: The signal transmission structure includes a plurality of second conductive structures; one end of one of the second conductive structures is electrically connected to the first conductive structure through a via, and the other end is electrically connected to the waveguide structure through a via, and each of the first conductive structures is stacked along a direction from the insulating layer to the first dielectric layer.

4. The optical modulator according to claim 1, wherein: The signal transmission structure includes a plurality of the first conductive structures and a plurality of the second conductive structures, and the total number of the first conductive structures and the second conductive structures ranges from 6 to 8 layers.

5. The optical modulator according to claim 1, characterized in that The optical modulator further includes a third dielectric layer, the third dielectric layer is located on the insulating layer, and the second conductive structure is disposed in the third dielectric layer.

6. The optical modulator according to claim 5, characterized in that The insulating layer and the third dielectric layer are made of the same material.

7. The optical modulator according to claim 1, characterized in that The first dielectric layer is a silicon layer or a glass material layer.

8. The optical modulator according to claim 1, wherein: The first dielectric layer is formed on the second dielectric layer by bonding.

9. The optical modulator according to claim 1, characterized in that The first conductive structure includes two first sub-conductive structures, the two first sub-conductive structures have the target conductive structure, and the two first sub-conductive structures are arranged opposite to each other or opposite to each other.

10. The optical modulator according to claim 1, wherein: The second conductive structure includes two second sub-conductive structures, each of the second sub-conductive structures has the target conductive structure, and the two second sub-conductive structures are arranged opposite to each other or opposite to each other.

11. The optical modulator according to claim 1, characterized in that The target conductive structure includes a main conductive structure and a plurality of side conductive structures periodically arranged along an extending direction of the waveguide structure; wherein each of the side conductive structures is electrically connected to the main conductive structure.

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