Semiconductor device

Abstract

This semiconductor device is provided with: a first lead that includes a first pad part; a first semiconductor element; a first wire; and a sealing resin. The first pad part has a first mounting surface that faces in a first direction. The first semiconductor element is bonded to the first mounting surface. The first wire has a first bonding part and a second bonding part. The first wire is provided with a first protrusion that covers the second bonding part and is covered by the sealing resin. The first pad part is provided with a first hole which is located closer to the second bonding part than to the first bonding part, and which penetrates through the first pad part in the first direction from the first mounting surface. A part of the sealing resin is housed in the first hole.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] The semiconductor device disclosed in Patent Document 1 includes two die pads, a control element (controller) mounted on one of the two die pads, a drive element (gate driver) mounted on the other of the two die pads, and a sealing resin that covers the control element and the drive element. The semiconductor device drives a switching element such as an IGBT or a MOSFET. The semiconductor device is used, for example, in an inverter circuit.

[0003] The semiconductor device further includes a bonding wire conductively bonded to a lead connected to one of the two die pads. The bonding wire is covered with a sealing resin. The bonding wire is electrically connected to either a control element or a drive element. To further shorten the length of the bonding wire, the bonding wire may be conductively bonded to one of the two die pads. In this case, the portion of the sealing resin covering the bonding wire is configured to be partitioned in the thickness direction by one of the two die pads. This reduces the dimension in the thickness direction of the portion of the sealing resin covering the bonding wire, which raises concerns that the bonding wire may peel off from one of the two die pads.

[0004] Japanese Patent Application Laid-Open No. 2016-207714

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can suppress peeling of wires from pads on which semiconductor elements are mounted.

[0006] The semiconductor device provided by the present disclosure includes a first lead including a first pad having a first mounting surface facing one side in a first direction, a first semiconductor element bonded to the first mounting surface, a first wire conductively bonded to the first semiconductor element and the first mounting surface, and a sealing resin covering at least a portion of the first pad, the first semiconductor element, and the first wire. The first wire has a first bonding portion conductively bonded to the first semiconductor element and a second bonding portion conductively bonded to the first mounting surface. The first wire has a first protrusion that covers the second bonding portion and is covered by the sealing resin. The first pad is located closer to the second bonding portion than the first bonding portion and has a first hole that penetrates the first pad from the first mounting surface in the first direction. A portion of the sealing resin is accommodated in the first hole.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , showing a see-through view of the sealing resin. FIG. 3 is a right side view of the semiconductor device shown in FIG. 1. FIG. 4 is a front view of the semiconductor device shown in FIG. 1. FIG. 5 is a rear view of the semiconductor device shown in FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 9 is a partial enlarged view of FIG. 7. FIG. 10 is a plan view of a semiconductor device according to a modified example of the first embodiment of the present disclosure, showing a see-through view of the sealing resin. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 10. FIG. 12 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, showing a see-through view of the sealing resin. FIG. 13 is a plan view of a semiconductor device according to a first modified example of the second embodiment of the present disclosure, showing a see-through view of the sealing resin. FIG. 14 is a plan view of a semiconductor device according to a second modified example of the second embodiment of the present disclosure, shown through the sealing resin. FIG. 15 is a right side view of a semiconductor device according to a third embodiment of the present disclosure. FIG. 16 is a front view of the semiconductor device shown in FIG. 15. FIG. 17 is a cross-sectional view of the semiconductor device shown in FIG. 15. FIG. 18 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 19 is a plan view corresponding to FIG. 18, shown through the sealing resin. FIG. 20 is a right side view of the semiconductor device shown in FIG. 18. FIG. 21 is a front view of the semiconductor device shown in FIG. 18. FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 19. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 19.

[0009] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0010] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 9 . The semiconductor device A10 includes a first semiconductor element 11, a second semiconductor element 12, a first lead 21, multiple second leads 22, a third lead 23, multiple fourth leads 24, multiple first wires 41, multiple second wires 42, two third wires 43, multiple fourth wires 44, a fifth wire 45, and a sealing resin 50. The semiconductor device A10 is surface-mounted on a wiring board of an inverter device for various electrical equipment. The package format of the semiconductor device A10 is a small outline package (SOP). The package format of the semiconductor device A10 is not limited to SOP. For ease of understanding, FIG. 2 shows the sealing resin 50 in a see-through manner. In FIG. 2, the outline of the sealing resin 50 is indicated by an imaginary line (double-dashed line).

[0011] In the description of the semiconductor device A10, for convenience, the normal direction to the first mounting surface 211A of the first pad portion 211 of the first lead 21 (described later) will be referred to as the "first direction z." A direction perpendicular to the first direction z will be referred to as the "second direction x." A direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0012] The first semiconductor element 11 drives a switching element located outside the semiconductor device A10. The switching element is, for example, an insulated gate bipolar transistor (IGBT) or a metal-oxide-semiconductor field-effect transistor (MOSFET). The first semiconductor element 11 includes a receiving circuit that receives a pulse width modulation (PWM) control signal, a circuit that drives the switching element based on the PWM control signal, and a transmitting circuit that transmits an electrical signal to the second semiconductor element 12. An example of the electrical signal is an output signal from a temperature sensor located near the motor.

[0013] The second semiconductor element 12 controls the first semiconductor element 11. The second semiconductor element 12 includes a circuit that converts an electrical signal input from a device other than the semiconductor device A10 into a PWM control signal, a transmitting circuit that transmits the PWM control signal to the first semiconductor element 11, and a receiving circuit that receives the electrical signal from the first semiconductor element 11.

[0014] 2 and 6 , the first semiconductor element 11 has a plurality of first electrodes 111 and two second electrodes 112. The plurality of first electrodes 111 are electrically connected to a circuit for driving the switching elements based on a PWM control signal. One of the two second electrodes 112 is electrically connected to a receiving circuit that receives the PWM control signal. The other of the two second electrodes 112 is electrically connected to a transmitting circuit that transmits an electrical signal to the second semiconductor element 12.

[0015] 2 and 6 , the second semiconductor element 12 has two third electrodes 121 and a plurality of fourth electrodes 122. One of the two third electrodes 121 is electrically connected to a transmitting circuit for transmitting a PWM control signal to the first semiconductor element 11. The other of the two third electrodes 121 is electrically connected to a receiving circuit that receives an electrical signal from the first semiconductor element 11. The plurality of fourth electrodes 122 are electrically connected to a circuit that converts an electrical signal input from a device different from the semiconductor device A10 into a PWM control signal.

[0016] As shown in FIG. 1 , the sealing resin 50 covers the first semiconductor element 11, the second semiconductor element 12, and portions of the first lead 21, the plurality of second leads 22, the third lead 23, and the plurality of fourth leads 24. As shown in FIGS. 6 to 8 , the sealing resin 50 further covers the plurality of first wires 41, the plurality of second wires 42, two third wires 43, the plurality of fourth wires 44, and the fifth wire 45. The sealing resin 50 is an insulator. The sealing resin 50 is made of a material containing, for example, epoxy resin. When viewed in the first direction z, the sealing resin 50 is rectangular.

[0017] As shown in FIGS. 3 to 5, the sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, and two third side surfaces 55.

[0018] 3 to 5, the top surface 51 and the bottom surface 52 face in opposite directions in the first direction z. The top surface 51 faces the same side in the first direction z as a first mounting surface 211A of a first pad portion 211 of a first lead 21, which will be described later.

[0019] As shown in FIG. 3 , the first side surface 53 is connected to the top surface 51 and the bottom surface 52 and faces one side in the second direction x. The first side surface 53 is located closer to the first lead 21 than the second side surface 54. The first side surface 53 includes a first region 531, a second region 532, and a third region 533. The first region 531 includes the first direction z as an in-plane direction. As viewed in the first direction z, the first region 531 is located outward from both the top surface 51 and the bottom surface 52. The second region 532 is located between the first region 531 and the top surface 51 in the first direction z. The third region 533 is located on the opposite side of the second region 532 from the first region 531. The second region 532 and the third region 533 are each inclined with respect to the first region 531. The inclination angle α1 of the second region 532 with respect to the first region 531 is equal to the inclination angle β1 of the third region 533 with respect to the first region 531 .

[0020] As shown in FIG. 3 , the second side surface 54 is connected to the top surface 51 and the bottom surface 52 and faces the opposite side from the first side surface 53 in the second direction x. The second side surface 54 is located closer to the third lead 23 than the first side surface 53. The second side surface 54 includes a fourth region 541, a fifth region 542, and a sixth region 543. The fourth region 541 includes the first direction z as an in-plane direction. As viewed in the first direction z, the fourth region 541 is located outward from both the top surface 51 and the bottom surface 52. The fifth region 542 is located between the fourth region 541 and the top surface 51 in the first direction z. The sixth region 543 is located on the opposite side from the fifth region 542 with respect to the fourth region 541. The fifth region 542 and the sixth region 543 are each inclined with respect to the fourth region 541. The inclination angle α2 of the fifth region 542 with respect to the fourth region 541 is equal to the inclination angle β2 of the sixth region 543 with respect to the fourth region 541 .

[0021] As shown in FIGS. 4 and 5 , each of the two third side surfaces 55 is connected to the top surface 51 and the bottom surface 52 and faces opposite each other in the third direction y. Each of the two third side surfaces 55 includes a seventh region 551, an eighth region 552, and a ninth region 553. The seventh region 551 includes the first direction z as an in-plane direction. When viewed in the first direction z, the seventh region 551 is located outward from each of the top surface 51 and the bottom surface 52. The eighth region 552 is located between the seventh region 551 and the top surface 51 in the first direction z. The ninth region 553 is located on the opposite side of the eighth region 552 from the seventh region 551. The eighth region 552 and the ninth region 553 are each inclined with respect to the seventh region 551. The inclination angle α3 of the eighth region 552 relative to the seventh region 551 is equal to the inclination angle β3 of the ninth region 553 relative to the seventh region 551 .

[0022] The first lead 21, the plurality of second leads 22, the third lead 23, and the plurality of fourth leads 24 all contain copper (Cu) and are obtained from the same lead frame.

[0023] 1 and 2 , the first lead 21 is located on one side in the second direction x. The first lead 21 is electrically connected to at least one of the multiple first electrodes 111 of the first semiconductor element 11. The first lead 21 includes a first pad portion 211, a first terminal portion 212, and a first support portion 213.

[0024] As shown in Figures 2, 6, and 7, the first pad portion 211 mounts the first semiconductor element 11. The first pad portion 211 has a first mounting surface 211A and a first back surface 211B that face opposite each other in the first direction z. The first mounting surface 211A faces the same side as the top surface 51 of the sealing resin 50 in the first direction z. The first semiconductor element 11 is bonded to the first mounting surface 211A via a bonding layer 19. The bonding layer 19 is made of a paste containing metal particles. The metal particles are, for example, silver (Ag). Therefore, the bonding layer 19 is a conductor. Alternatively, the bonding layer 19 may be solder.

[0025] 2 and 7 , the first pad portion 211 is provided with a first hole 214 that penetrates the first pad portion 211 from the first mounting surface 211A. The first hole 214 extends in the third direction y. A portion of the sealing resin 50 is accommodated in the first hole 214.

[0026] 6 and 7 , the first pad portion 211 has a plurality of first recesses 215 recessed from the first back surface 211B. As shown in Fig. 2 , the plurality of first recesses 215 are arranged in a lattice pattern when viewed in the first direction z. Portions of the sealing resin 50 are accommodated in the plurality of first recesses 215.

[0027] 1 and 2, the first terminal portion 212 is connected to one side of the first pad portion 211 in the second direction x. As shown in Fig. 4, the first terminal portion 212 protrudes from a first region 531 of a first side surface 53 of the sealing resin 50. When viewed in the first direction z, the first terminal portion 212 extends in the second direction x. As shown in Fig. 3, when viewed in the third direction y, the first terminal portion 212 is bent in a gull-wing shape. The surface of the first terminal portion 212 is plated with, for example, tin.

[0028] 1 and 2 , the first support portion 213 is located on the same side as the first terminal portion 212 with respect to the first pad portion 211 in the second direction x. The first support portion 213 is connected to the first pad portion 211. As shown in FIG. 4 , the first support portion 213 is exposed from a first region 531 of the first side surface 53 of the sealing resin 50.

[0029] 1 and 2 , the second leads 22 are located on the opposite side of the first semiconductor element 11 from the third lead 23 in the second direction x. The second leads 22 are arranged along the third direction y. Each of the second leads 22 is electrically connected to at least one of the first electrodes 111 of the first semiconductor element 11.

[0030] As shown in FIGS. 2 and 6 , each of the multiple second leads 22 includes a first inner portion 221 and a first outer portion 222. The first inner portion 221 is covered with the sealing resin 50. As shown in FIG. 6 , the first inner portion 221 has a first connection surface 221A. The first connection surface 221A faces the same side as the first mounting surface 211A of the first pad portion 211 of the first lead 21 in the first direction z. The first connection surface 221A and the first mounting surface 211A are included in the same plane. The first outer portion 222 is connected to the first inner portion 221. As shown in FIG. 4 , the first outer portion 222 protrudes from a first region 531 of the first side surface 53 of the sealing resin 50. When viewed in the first direction z, the first outer portion 222 extends in the second direction x. When viewed in the third direction y, the first outer part 222 is bent in a gull-wing shape. The shape of the first outer part 222 is equal to the shape of the portion of the first terminal part 212 (see FIG. 3 ) of the first lead 21 that protrudes from the sealing resin 50. The surface of the first outer part 222 is plated with, for example, tin.

[0031] 6 , the first outer part 222 has a first mounting surface 222A. The first mounting surface 222A faces the opposite side of the first connecting surface 221A of the first inner part 221 in the first direction z. The first mounting surface 222A is located farthest from the first connecting surface 221A in the first direction z. The first mounting surface 222A protrudes from within a plane including the bottom surface 52 of the sealing resin 50. The first mounting surface 222A is inclined with respect to the bottom surface 52.

[0032] 1 and 2, the third lead 23 is located on the opposite side of the first semiconductor element 11 from the multiple second leads 22 in the second direction x. The third lead 23 is electrically connected to one of the multiple fourth electrodes 122 of the second semiconductor element 12. The third lead 23 includes a second pad portion 231, a second terminal portion 232, and a second support portion 233.

[0033] 2, 6, and 8, the second pad portion 231 has a second semiconductor element 12 mounted thereon. The second pad portion 231 has a second mounting surface 231A and a second back surface 231B that face opposite each other in the first direction z. The second mounting surface 231A faces the same side as the top surface 51 of the sealing resin 50 in the first direction z. The second semiconductor element 12 is bonded to the second mounting surface 231A via a bonding layer 19.

[0034] 2 and 8 , the second pad portion 231 is provided with a second hole 234 that penetrates the second pad portion 231 from the second mounting surface 231A. The second hole 234 extends in the third direction y. A portion of the sealing resin 50 is accommodated in the second hole 234.

[0035] 6 and 8, the second pad portion 231 has a plurality of second recesses 235 recessed from the second back surface 231B. As shown in Fig. 2, the plurality of second recesses 235 are arranged in a lattice pattern when viewed in the first direction z. Portions of the sealing resin 50 are accommodated in the plurality of second recesses 235.

[0036] As shown in FIGS. 1 and 2 , the second terminal portion 232 is located on the opposite side of the second pad portion 231 from the first lead 21 in the second direction x. The second terminal portion 232 is connected to the second pad portion 231. As shown in FIG. 5 , the second terminal portion 232 protrudes from a fourth region 541 of the second side surface 54 of the sealing resin 50. When viewed in the first direction z, the second terminal portion 232 extends in the second direction x. When viewed in the third direction y, the second terminal portion 232 is bent in a gull-wing shape. The shape of the second terminal portion 232 is the same as the shape of a second outer portion 242 (see FIG. 3 ) of any one of the multiple fourth leads 24 described below. The surface of the second terminal portion 232 is, for example, tin-plated.

[0037] 1 and 2 , the second support portion 233 is located on the same side as the second terminal portion 232 with respect to the second pad portion 231 in the second direction x. The second support portion 233 is connected to the second pad portion 231. As shown in FIG. 5 , the second support portion 233 is exposed from a fourth region 541 of the second side surface 54 of the sealing resin 50.

[0038] 1 and 2 , the multiple fourth leads 24 are located on the opposite side of the second semiconductor element 12 from the first lead 21 in the second direction x. The multiple fourth leads 24 are arranged along the third direction y. Each of the multiple fourth leads 24 is electrically connected to at least one of the multiple fourth electrodes 122 of the second semiconductor element 12.

[0039] As shown in FIGS. 2 and 6 , each of the multiple fourth leads 24 includes a second inner portion 241 and a second outer portion 242. The second inner portion 241 is covered with the sealing resin 50. As shown in FIG. 6 , the second inner portion 241 has a second connection surface 241A. The second connection surface 241A faces the same side as the second mounting surface 231A of the second pad portion 231 of the third lead 23 in the first direction z. The second connection surface 241A and the second mounting surface 231A are included in the same plane. The second outer portion 242 is connected to the second inner portion 241. As shown in FIG. 5 , the second outer portion 242 protrudes from a fourth region 541 of the second side surface 54 of the sealing resin 50. When viewed in the first direction z, the second outer portion 242 extends in the second direction x. 3, the second outer portion 242 is bent in a gull-wing shape when viewed in the third direction y. The surface of the second outer portion 242 is plated with, for example, tin.

[0040] 6 , the second outer part 242 has a second mounting surface 242A. The second mounting surface 242A faces the opposite side from the second connecting surface 241A of the second inner part 241 in the first direction z. The second mounting surface 242A is located farthest from the second connecting surface 241A in the first direction z. The second mounting surface 242A protrudes from within a plane including the bottom surface 52 of the sealing resin 50. The second mounting surface 242A is inclined with respect to the bottom surface 52.

[0041] As shown in FIG. 2 , each of the multiple first wires 41 is conductively bonded to one of the multiple first electrodes 111 of the first semiconductor element 11 and the first mounting surface 211A of the first pad portion 211 of the first lead 21. This provides electrical continuity between the first lead 21 and the first semiconductor element 11. The multiple first wires 41 form the ground of the first semiconductor element 11. As shown in FIG. 7 , each of the multiple first wires 41 has a first bonding portion 411, a second bonding portion 412, and a main portion 414. The first bonding portion 411 is conductively bonded to one of the multiple first electrodes 111. The second bonding portion 412 is conductively bonded to the first mounting surface 211A. When viewed in the first direction z, the second bonding portion 412 of each of the multiple first wires 41 is spaced apart from the multiple first recesses 215 provided in the first pad portion 211. The main portion 414 is located between the first joint portion 411 and the second joint portion 412 .

[0042] 2 and 7 , the first hole 214 provided in the first pad portion 211 of the first lead 21 is located closer to the second joint portion 412 of each of the multiple first wires 41 than the first joint portion 411 of each of the multiple first wires 41. In the semiconductor device A10, the multiple first wires 41 overlap the first hole 214 when viewed in the first direction z. When viewed in the first direction z, each of the multiple first wires 41 extends in the second direction x. Therefore, when viewed in the first direction z, the first hole 214 extends in a direction perpendicular to the direction in which each of the multiple first wires 41 extends.

[0043] As shown in FIGS. 2 and 7 , each of the multiple first wires 41 has a first protrusion 413. The first protrusion 413 corresponds to a ball bonding portion formed by wire bonding. The first protrusion 413 covers the second bonding portion 412 of one of the multiple first wires 41 and is covered with the sealing resin 50. As shown in FIG. 9 , the first protrusion 413 contacts the second bonding portion 412 and the first mounting surface 211A of the first pad portion 211 of the first lead 21. A dimension D of the first protrusion 413 in a direction perpendicular to the first direction z is larger than a dimension d of the main portion 414 in a direction perpendicular to the extension direction of one of the multiple first wires 41. Furthermore, the dimension D of the first protrusion 413 is larger than the dimension of the first bonding portion 411 in a direction perpendicular to the first direction z.

[0044] 2, each of the multiple second wires 42 is conductively bonded to one of the multiple first electrodes 111 of the first semiconductor element 11 and to the first inner portion 221 of one of the multiple second leads 22. This allows the multiple second leads 22 to be electrically connected to the first semiconductor element 11. As shown in FIG. 6, each of the multiple second wires 42 has a third bonding portion 421. The third bonding portion 421 is conductively bonded to the first connection surface 221A of the first inner portion 221 of one of the multiple second leads 22.

[0045] 2 and 6 , each of the second wires 42 is provided with a second protrusion 422. The second protrusion 422 corresponds to a ball bonding portion formed by wire bonding. The second protrusion 422 covers the third bonding portion 421 of any of the second wires 42 and is covered with the sealing resin 50.

[0046] 2 and 6 , the two third wires 43 are individually conductively bonded to the two second electrodes 112 of the first semiconductor element 11 and the two third electrodes 121 of the second semiconductor element 12. This allows the first semiconductor element 11 and the second semiconductor element 12 to be electrically connected to each other. When viewed in the first direction z, the two third wires 43 straddle the gap between the first pad portion 211 of the first lead 21 and the second pad portion 231 of the third lead 23.

[0047] 2, each of the multiple fourth wires 44 is conductively bonded to one of the multiple fourth electrodes 122 of the second semiconductor element 12 and the second inner portion 241 of one of the multiple fourth leads 24. This allows the multiple fourth leads 24 to be electrically connected to the second semiconductor element 12. As shown in FIG. 6, each of the multiple fourth wires 44 has a fourth joint portion 441. The fourth joint portion 441 is conductively bonded to the second connection surface 241A of the second inner portion 241 of one of the multiple fourth leads 24.

[0048] 2 and 6 , each of the plurality of fourth wires 44 is provided with a third protrusion 442. The third protrusion 442 corresponds to a ball bonding portion formed by wire bonding. The third protrusion 442 covers the fourth bonding portion 441 of any of the plurality of fourth wires 44 and is covered with the sealing resin 50.

[0049] As shown in FIG. 2 , the fifth wire 45 is conductively bonded to one of the plurality of fourth electrodes 122 of the second semiconductor element 12 and the second mounting surface 231A of the second pad portion 231 of the third lead 23. This provides electrical continuity between the third lead 23 and the second semiconductor element 12. The fifth wire 45 serves as the ground for the second semiconductor element 12. As shown in FIG. 8 , the fifth wire 45 has a fifth joint portion 451 and a sixth joint portion 452. The fifth joint portion 451 is conductively bonded to one of the plurality of fourth electrodes 122. The sixth joint portion 452 is conductively bonded to the second mounting surface 231A. When viewed in the first direction z, the sixth joint portion 452 is spaced apart from the plurality of second recesses 235 provided in the second pad portion 231.

[0050] 2 and 8 , the second hole 234 provided in the second pad portion 231 of the third lead 23 is located closer to the sixth joint portion 452 than to the fifth joint portion 451. In the semiconductor device A10, the fifth wire 45 overlaps the second hole 234 when viewed in the first direction z. When viewed in the first direction z, the fifth wire 45 extends in the second direction x. Therefore, when viewed in the first direction z, the second hole 234 extends in a direction perpendicular to the direction in which the fifth wire 45 extends.

[0051] 2 and 8 , the fifth wire 45 is provided with a fourth protrusion 453. The fourth protrusion 453 corresponds to a ball bonding portion formed by wire bonding. The fourth protrusion 453 covers the sixth bonding portion 452 and is covered with the sealing resin 50.

[0052] Next, a semiconductor device A11 according to a modification of the semiconductor device A10 will be described with reference to Fig. 10 and Fig. 11. For ease of understanding, Fig. 10 shows the sealing resin 50 in a see-through manner. In Fig. 10, the outline of the sealing resin 50 is shown by imaginary lines.

[0053] In the semiconductor device A11, the configuration of the first hole 214 provided in the first pad portion 211 of the first lead 21 and the configuration of the second hole 234 provided in the second pad portion 231 of the third lead 23 differ from those of the semiconductor device A10. As shown in Figures 10 and 11 , the first hole 214 is connected to one of a plurality of first recesses 215 provided in the first pad portion 211. Similarly, the second hole 234 is connected to one of a plurality of second recesses 235 provided in the second pad portion 231.

[0054] Next, the effects of the semiconductor device A10 will be described.

[0055] The semiconductor device A10 includes a first lead 21 including a first pad portion 211, a first semiconductor element 11, a first wire 41, and a sealing resin 50. The first wire 41 has a first bonding portion 411 and a second bonding portion 412. The first wire 41 is provided with a first convex body 413 that covers the second bonding portion 412 and is covered with the sealing resin 50. The first pad portion 211 is provided with a first hole 214 that is located closer to the second bonding portion 412 than the first bonding portion 411 and that penetrates from the first mounting surface 211A of the first pad portion 211 in the first direction z. A portion of the sealing resin 50 is accommodated in the first hole 214. With this configuration, the first convex body 413 prevents the second bonding portion 412 from peeling off from the first mounting surface 211A. Furthermore, the portion of the sealing resin 50 covering the first convex body 413 is closer to the portion of the sealing resin 50 housed in the first hole 214. As a result, peeling of the second bonding portion 412 from the first mounting surface 211A is also restricted by the portion of the sealing resin 50 housed in the first hole 214. Therefore, with this configuration, in the semiconductor device A10, it is possible to prevent the first wire 41 from peeling off from the first pad portion 211 on which the first semiconductor element 11 is mounted.

[0056] The first convex body 413 contacts the second bonding portion 412 of the first wire 41 and the first mounting surface 211A of the first pad portion 211. By adopting this configuration, peeling of the second bonding portion 412 from the first mounting surface 211A is more firmly restricted.

[0057] When viewed in the first direction z, the first wire 41 overlaps the first hole 214. With this configuration, the first wire 41 is directly covered by the portion of the sealing resin 50 housed in the first hole 214. This more firmly restricts peeling of the second bonding portion 412 from the first mounting surface 211A.

[0058] The first pad portion 211 has a first recess 215 recessed from the first back surface 211B. A portion of the sealing resin 50 is accommodated in the first recess 215. This configuration allows the sealing resin 50 to exhibit an anchoring effect with respect to the first pad portion 211. This makes it possible to prevent the sealing resin 50 from peeling off from the first pad portion 211.

[0059] In the semiconductor device A11 having the above configuration, the first recess 215 is connected to the first hole 214. With this configuration, the portion of the sealing resin 50 housed in the first hole 214 exhibits an anchoring effect on the first pad portion 211. This further firmly restricts peeling of the second bonding portion 412 from the first mounting surface 211A.

[0060] When viewed in the first direction z, the second joint portion 412 of the first wire 41 is spaced apart from the first recess 215. This configuration can prevent a decrease in the bonding strength of the second joint portion 412 to the first mounting surface 211A of the first pad portion 211.

[0061] By providing the first hole 214 in the first pad portion 211, when forming the sealing resin 50 in the manufacturing of the semiconductor device A10, the portion of the sealing resin 50 located above the first mounting surface 211A of the first pad portion 211 becomes more solid.

[0062] The semiconductor device A10 further includes a second lead 22 and a second wire 42. The third wire 43 has a third joint portion 421 that is conductively joined to the second lead 22. The second wire 42 is provided with a second convex body 422 that covers the third joint portion 421 and is covered with sealing resin 50. With this configuration, the second convex body 422 prevents the third joint portion 421 from peeling off from the second lead 22.

[0063] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figure 12. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 12 shows the sealing resin 50 in a see-through manner. In Figure 12, the outline of the sealing resin 50 is shown by imaginary lines.

[0064] In the semiconductor device A20, the configuration of the first hole 214 provided in the first pad portion 211 of the first lead 21 and the configuration of the second hole 234 provided in the second pad portion 231 of the third lead 23 differ from the corresponding configurations of the semiconductor device A10.

[0065] 12 , as viewed in the first direction z, each of the multiple first wires 41 is spaced apart from the first hole 214. As viewed in the first direction z, the first hole 214 is located between the first joint portion 411 of each of the multiple first wires 41 and the second joint portion 412 of each of the multiple first wires 41.

[0066] 12 , as viewed in the first direction z, the fifth wire 45 is spaced apart from the second hole 234. As viewed in the first direction z, the second hole 234 is located between the fifth joint 451 and the sixth joint 452 of the fifth wire 45.

[0067] Next, a semiconductor device A21 according to a first modification of the semiconductor device A20 will be described with reference to Fig. 13. For ease of understanding, Fig. 13 shows the sealing resin 50 in a see-through manner. In Fig. 13, the outline of the sealing resin 50 is shown by imaginary lines.

[0068] In the semiconductor device A21, the configuration of the first hole 214 provided in the first pad portion 211 of the first lead 21 and the configuration of the second hole 234 provided in the second pad portion 231 of the third lead 23 differ from those of the semiconductor device A20. As shown in Fig. 13 , when viewed in the first direction z, the first hole 214 is located on one side of the second joint portion 412 of each of the multiple first wires 41 in a direction perpendicular to the direction in which each of the multiple first wires 41 extends. Similarly, when viewed in the first direction z, the second hole 234 is located on one side of the sixth joint portion 452 of the fifth wire 45 in a direction perpendicular to the direction in which the fifth wire 45 extends.

[0069] Next, a semiconductor device A22 according to a second modification of the semiconductor device A20 will be described with reference to Fig. 14. For ease of understanding, Fig. 14 shows the sealing resin 50 in a see-through manner. In Fig. 14, the outline of the sealing resin 50 is shown by imaginary lines.

[0070] In the semiconductor device A22, the configuration of the first hole 214 provided in the first pad portion 211 of the first lead 21 and the configuration of the second hole 234 provided in the second pad portion 231 of the third lead 23 differ from those of the semiconductor device A20. As shown in Fig. 14 , the first hole 214 includes a first portion 214A and a second portion 214B that are spaced apart from each other. As viewed in the first direction z, the first portion 214A and the second portion 214B are individually located on both sides of the second joint portion 412 of each of the multiple first wires 41 in a direction perpendicular to the direction in which each of the multiple first wires 41 extends.

[0071] 14 , the second hole 234 includes a third portion 234A and a fourth portion 234B that are spaced apart from each other. As viewed in the first direction z, the third portion 234A and the fourth portion 234B are located on either side of the sixth joint portion 452 of the fifth wire 45 in a direction perpendicular to the direction in which the fifth wire 45 extends.

[0072] Next, the effects of the semiconductor device A20 will be described.

[0073] The semiconductor device A20 includes a first lead 21 including a first pad portion 211, a first semiconductor element 11, a first wire 41, and a sealing resin 50. The first wire 41 has a first bonding portion 411 and a second bonding portion 412. The first wire 41 has a first convex portion 413 that covers the second bonding portion 412 and is covered with the sealing resin 50. The first pad portion 211 has a first hole 214 that is located closer to the second bonding portion 412 than the first bonding portion 411 and penetrates from the first mounting surface 211A of the first pad portion 211 in the first direction z. A portion of the sealing resin 50 is accommodated in the first hole 214. Therefore, with this configuration, even in the semiconductor device A20, it is possible to prevent the first wire 41 from peeling off from the first pad portion 211 on which the first semiconductor element 11 is mounted. Furthermore, the semiconductor device A20 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0074] In the semiconductor device A20, the first wire 41 is spaced apart from the first hole 214 when viewed in the first direction z. In this configuration as well, the portion of the sealing resin 50 covering the first convex body 413 is closer to the portion of the sealing resin 50 housed in the first hole 214. Therefore, in the semiconductor device A20 as well, peeling of the second bonding portion 412 from the first mounting surface 211A of the first lead 21 is also restricted by the portion of the sealing resin 50 housed in the first hole 214.

[0075] In the above case, the relationship between the first hole 214 and the second bonding portion 412 of the first wire 41 can more effectively prevent the first wire 41 from peeling off from the first pad portion 211 in the configuration of the semiconductor device A21 than in the configuration of the semiconductor device A20. Furthermore, the configuration of the semiconductor device A22 can more effectively prevent the first wire 41 from peeling off from the first pad portion 211 than the configuration of the semiconductor device A21.

[0076] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 15 to 17. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. The cross-sectional position in Figure 17 corresponds to the cross-sectional position in Figure 6, which shows the semiconductor device A10.

[0077] In the semiconductor device A30, the configuration of the sealing resin 50 is different from that of the semiconductor device A10.

[0078] 17 , a dimension H1 in the first direction z of the sealing resin 50 from the top surface 51 of the sealing resin 50 to the first mounting surface 211A of the first pad 211 of the first lead 21 is larger than a dimension H2 in the first direction z of the sealing resin 50 from the bottom surface 52 of the sealing resin 50 to the first back surface 211B of the first pad 211. Similarly, a dimension H3 in the first direction z of the sealing resin 50 from the top surface 51 to the second mounting surface 231A of the second pad 231 of the third lead 23 is larger than a dimension H4 of the sealing resin 50 from the bottom surface 52 to the second back surface 231B of the second pad 231.

[0079] 15 , on the first side surface 53 of the sealing resin 50, the inclination angle α1 of the second region 532 with respect to the first region 531 is larger than the inclination angle β1 of the third region 533 with respect to the first region 531. On the second side surface 54 of the sealing resin 50, the inclination angle α2 of the fifth region 542 with respect to the fourth region 541 is larger than the inclination angle β2 of the sixth region 543 with respect to the fourth region 541.

[0080] As shown in FIG. 16 , on each of the two third side surfaces 55 of the sealing resin 50 , the inclination angle α3 of the eighth region 552 with respect to the seventh region 551 is larger than the inclination angle β3 of the ninth region 553 with respect to the seventh region 551 .

[0081] Next, the effects of the semiconductor device A30 will be described.

[0082] The semiconductor device A30 includes a first lead 21 including a first pad portion 211, a first semiconductor element 11, a first wire 41, and a sealing resin 50. The first wire 41 has a first bonding portion 411 and a second bonding portion 412. The first wire 41 has a first convex portion 413 that covers the second bonding portion 412 and is covered with the sealing resin 50. The first pad portion 211 has a first hole 214 that is located closer to the second bonding portion 412 than the first bonding portion 411 and penetrates from the first mounting surface 211A of the first pad portion 211 in the first direction z. A portion of the sealing resin 50 is accommodated in the first hole 214. Therefore, with this configuration, even in the semiconductor device A30, it is possible to prevent the first wire 41 from peeling off from the first pad portion 211 on which the first semiconductor element 11 is mounted. Furthermore, the semiconductor device A30 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0083] In the semiconductor device A30, a dimension H1 in the first direction z of the sealing resin 50 from the top surface 51 of the sealing resin 50 to the first mounting surface 211A of the first pad portion 211 is larger than a dimension H2 in the first direction z of the sealing resin 50 from the bottom surface 52 of the sealing resin 50 to the first back surface 211B of the first pad portion 211. By adopting this configuration, it is possible to reduce the dimension in the first direction z of the semiconductor device A30 without reducing the dimension in the first direction z of the portion of the sealing resin 50 that covers the third wire 43. This makes it possible to miniaturize the semiconductor device A30 while ensuring the dielectric strength voltage of the semiconductor device A30.

[0084] In the above configuration, on the first side surface 53 of the sealing resin 50, the inclination angle α1 of the second region 532 relative to the first region 531 is larger than the inclination angle β1 of the third region 533 relative to the first region 531. By adopting this configuration, when forming the portion of the sealing resin 50 located between the top surface 51 and the first mounting surface 211A of the first pad portion 211 in the first direction z, it is possible to suppress the occurrence of damage to that portion when the molding die is removed.

[0085] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to Figures 18 to 23. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 19 shows the sealing resin 50 in a see-through manner. In Figure 19, the outline of the sealing resin 50 is shown by imaginary lines.

[0086] The semiconductor device A40 differs from the semiconductor device A10 in that it further includes two fifth leads 25.

[0087] 18 and 19 , the two fifth leads 25 are positioned apart from each other in the third direction y. As shown in FIGS. 20 and 23 , each of the two fifth leads 25 has an end face 251 facing the third direction y. The end face 251 of each of the two fifth leads 25 is exposed individually from each of the two third side faces 55 of the sealing resin 50.

[0088] Next, the effects of the semiconductor device A40 will be described.

[0089] The semiconductor device A40 includes a first lead 21 including a first pad portion 211, a first semiconductor element 11, a first wire 41, and a sealing resin 50. The first wire 41 has a first bonding portion 411 and a second bonding portion 412. The first wire 41 has a first convex portion 413 that covers the second bonding portion 412 and is covered with the sealing resin 50. The first pad portion 211 has a first hole 214 that is located closer to the second bonding portion 412 than the first bonding portion 411 and penetrates from the first mounting surface 211A of the first pad portion 211 in the first direction z. A portion of the sealing resin 50 is accommodated in the first hole 214. Therefore, with this configuration, even in the semiconductor device A40, it is possible to prevent the first wire 41 from peeling off from the first pad portion 211 on which the first semiconductor element 11 is mounted. Furthermore, the semiconductor device A40 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0090] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0091] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a first lead including a first pad portion having a first mounting surface facing one side in a first direction; a first semiconductor element bonded to the first mounting surface; a first wire conductively bonded to the first semiconductor element and the first mounting surface; and a sealing resin covering at least a portion of the first pad portion, the first semiconductor element, and the first wire, wherein the first wire has a first bonding portion conductively bonded to the first semiconductor element and a second bonding portion conductively bonded to the first mounting surface, the first wire is provided with a first protrusion that covers the second bonding portion and is covered by the sealing resin, the first pad portion is located closer to the second bonding portion than the first bonding portion and has a first hole that penetrates the first pad portion in the first direction from the first mounting surface, and a portion of the sealing resin is accommodated in the first hole. Supplementary note 2. The semiconductor device according to Supplementary Note 1, wherein the first protrusion is in contact with the second bonding portion and the first mounting surface. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein, when viewed in the first direction, the first wire overlaps the first hole. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein, when viewed in the first direction, the first hole extends in a direction perpendicular to the direction in which the first wire extends. Supplementary Note 5. The semiconductor device according to Supplementary Note 2, wherein, when viewed in the first direction, the first wire is spaced apart from the first hole. Supplementary Note 6. The semiconductor device according to Supplementary Note 5, wherein, when viewed in the first direction, the first hole is located between the first bonding portion and the second bonding portion. Supplementary Note 7. The semiconductor device according to Supplementary Note 5, wherein, when viewed in the first direction, the first hole is located on one side of the second bonding portion in a direction perpendicular to the direction in which the first wire extends. Supplementary Note 8. The semiconductor device described in Appendix 5, wherein the first hole includes a first portion and a second portion that are spaced apart from each other, and when viewed in the first direction, the first portion and the second portion are individually located on both sides of the second joint portion in a direction perpendicular to the direction in which the first wire extends.Appendix 9. The semiconductor device according to Appendix 2, wherein the first wire has a main portion located between the first bonding portion and the second bonding portion, and a dimension of the first protrusion in a direction orthogonal to the first direction is larger than a dimension of the main portion in a direction orthogonal to a direction in which the first wire extends. Appendix 10. The semiconductor device according to Appendix 9, wherein a dimension of the first protrusion in the direction orthogonal to the first direction is larger than a dimension of the first bonding portion in the direction orthogonal to the first direction. Appendix 11. The semiconductor device according to any of Appendixes 2 to 10, further comprising: a second lead; and a second wire conductively bonded to the first semiconductor element and the second lead, wherein the second wire is covered with the sealing resin, the sealing resin has a first side surface facing one side in a second direction orthogonal to the first direction, and the second lead protrudes from the first side surface. Appendix 12. The semiconductor device according to Appendix 11, wherein the second wire has a third bonding portion conductively bonded to the second lead, and the second wire is provided with a second protrusion that covers the third bonding portion and is covered with the sealing resin. Appendix 13. The semiconductor device according to Appendix 11, wherein the first lead has a first terminal portion and a first support portion connected to the first pad portion, the first terminal portion protruding from the first side surface, and the first support portion connected to one side of the first pad portion in the second direction and exposed from the first side surface. Appendix 14. The semiconductor device according to Appendix 13, wherein the first pad portion has a first back surface facing opposite to the first mounting surface in the first direction, the first pad portion is provided with a first recess recessed from the first back surface, and a portion of the sealing resin is accommodated in the first recess. Appendix 15. The semiconductor device according to Appendix 14, wherein the second bonding portion is separated from the first recess when viewed in the first direction. Appendix 16. 16. The semiconductor device according to claim 15, wherein the first recess is connected to the first hole.Appendix 17. The semiconductor device according to Appendix 14, further comprising: a third lead including a second pad portion having a second mounting surface facing the same side as the first mounting surface in the first direction; a second semiconductor element bonded to the second mounting surface; and a third wire conductively bonded to the first semiconductor element and the second semiconductor element, wherein the second pad portion is spaced apart from the first pad portion in the second direction, and at least a portion of the second pad portion, the second semiconductor element, and the third wire are covered with the sealing resin. Appendix 18. The semiconductor device according to Appendix 17, further comprising: a fourth lead; and a fourth wire conductively bonded to the second semiconductor element and the fourth lead, wherein the fourth wire is covered with the sealing resin, and the sealing resin has a second side surface facing opposite to the first side surface in the second direction, and the fourth lead protrudes from the second side surface. Appendix 19. the semiconductor device according to Appendix 18, wherein the third lead has a second terminal portion and a second support portion connected to the second pad portion, the second terminal portion protruding from the second side surface, and the second support portion is located on the opposite side of the second pad portion from the first pad portion in the second direction and is exposed from the second side surface. Appendix 20. The semiconductor device according to Appendix 19, further comprising: a fifth wire conductively bonded to the second semiconductor element and the second mounting surface, the fifth wire being covered with the sealing resin, the fifth wire having a fifth bonding portion conductively bonded to the second semiconductor element and a sixth bonding portion conductively bonded to the second mounting surface, the second wire having a fourth protrusion covering the sixth bonding portion and covered with the sealing resin, the second pad portion having a second hole positioned closer to the sixth bonding portion than the fifth bonding portion and penetrating the second pad portion from the second mounting surface in the first direction, and a portion of the sealing resin being accommodated in the second hole. Appendix 21. The semiconductor device according to Appendix 20, wherein the fifth wire overlaps the second hole when viewed in the first direction.Appendix 22. The semiconductor device according to Appendix 21, further comprising two fifth leads spaced apart from each other in a third direction orthogonal to the first direction and the second direction, wherein the sealing resin has two third side surfaces facing opposite each other in the third direction, and the two fifth leads are individually exposed from the two third side surfaces. Appendix 23. The semiconductor device according to Appendix 22, wherein the two fifth leads overlap either the first terminal portion or the second terminal portion as viewed in the second direction. Appendix 24. The semiconductor device according to Appendix 14, wherein the sealing resin has a top surface facing the same side as the first mounting surface in the first direction and a bottom surface facing the opposite side from the top surface in the first direction, and wherein the dimension of the sealing resin in the first direction from the top surface to the first mounting surface is larger than the dimension of the sealing resin in the first direction from the bottom surface to the first back surface. Appendix 25. The semiconductor device according to Appendix 24, wherein the first side includes a first region including the first direction as an in-plane direction, a second region located between the first region and the top surface in the first direction, and a third region located on the opposite side of the first region from the second region, the second region and the third region are inclined with respect to the first region, the first terminal portion and the second lead protrude from the first region, and the first support portion is exposed from the first region. Appendix 26. The semiconductor device according to Appendix 25, wherein an inclination angle of the second region with respect to the first region is greater than an inclination angle of the third region with respect to the first region. Appendix 27. the second lead has a first connection surface facing the same side as the first mounting surface in the first direction and covered with the sealing resin, and a first mounting surface facing the opposite side from the first connection surface in the first direction and exposed from the sealing resin, the second wire is conductively bonded to the first connection surface, the first mounting surface is located farthest from the first connection surface in the first direction, the sealing resin has a bottom surface facing the opposite side from the first mounting surface in the first direction, and the first mounting surface protrudes from a plane including the bottom surface.

[0092] A10, A20, A30, A40: semiconductor device 11: first semiconductor element 111: first electrode 112: second electrode 12: second semiconductor element 121: third electrode 122: fourth electrode 19: bonding layer 21: first lead 211: first pad portion 211A: first mounting surface 211B: first back surface 212: first terminal portion 213: first support portion 214: first hole 214A: first portion 214B: second portion 215: first recess 22: second lead 221: first inner portion 221A: first connection surface 222: first outer portion 222A: first mounting surface 23: third lead 231: second pad portion 231A: second mounting surface 231B: second back surface 232: Second terminal portion 233: Second support portion 234: Second hole 234A: Third portion 234B: Fourth portion 235: Second recess 24: Fourth lead 241: Second inner portion 241A: Second connection surface 242: Second outer portion 242A: Second mounting surface 25: Fifth lead 251: End face 41: First wire 411: First joint portion 412: Second joint portion 413: First convex body 414: Main portion 42: Second wire 421: Third joint portion 422: Second convex body 43: Third wire 44: Fourth wire 441: Fourth joint portion 442: Third convex body 45: Fifth wire 451: Fifth joint portion 452: Sixth joint portion 453: Fourth convex body 50: Sealing resin 51: Top surface 52: Bottom surface 53: First side surface 531 to 533: First region to third region 54: Second side surface 541 to 543: Fourth region to sixth region 55: Third side surface 551 to 553: Seventh region to ninth region z: First direction x: Second direction y: Third direction

Claims

1. A semiconductor device comprising: a first lead including a first pad portion having a first mounting surface facing one side in a first direction; a first semiconductor element bonded to the first mounting surface; a first wire conductively bonded to the first semiconductor element and the first mounting surface; and a sealing resin covering at least a portion of the first pad portion, the first semiconductor element, and the first wire, wherein the first wire has a first joint portion conductively bonded to the first semiconductor element and a second joint portion conductively bonded to the first mounting surface, the first wire is provided with a first convex body covering the second joint portion and covered by the sealing resin, the first pad portion is located closer to the second joint portion than the first joint portion and has a first hole penetrating the first pad portion in the first direction from the first mounting surface, and a portion of the sealing resin is accommodated in the first hole.

2. The semiconductor device according to claim 1, wherein said first protrusion is in contact with said second bonding portion and said first mounting surface.

3. The semiconductor device according to claim 2, wherein the first wire overlaps the first hole when viewed in the first direction.

4. The semiconductor device according to claim 3, wherein, when viewed in the first direction, the first hole extends in a direction perpendicular to the direction in which the first wire extends.

5. The semiconductor device according to claim 2, wherein, when viewed in the first direction, the first wire is spaced apart from the first hole.

6. The semiconductor device according to claim 5, wherein, when viewed in the first direction, the first hole is located between the first bonding portion and the second bonding portion.

7. The semiconductor device according to claim 5, wherein, when viewed in the first direction, the first hole is located on one side of the second joint portion in a direction perpendicular to the direction in which the first wire extends.

8. The semiconductor device described in claim 5, wherein the first hole includes a first portion and a second portion spaced apart from each other, and when viewed in the first direction, the first portion and the second portion are individually located on either side of the second joint portion in a direction perpendicular to the direction in which the first wire extends.

9. The semiconductor device described in claim 2, wherein the first wire has a main portion located between the first joint portion and the second joint portion, and the dimension of the first convex body in a direction perpendicular to the first direction is larger than the dimension of the main portion in a direction perpendicular to the extension direction of the first wire.

10. The semiconductor device according to claim 9, wherein a dimension of said first protrusion in a direction perpendicular to said first direction is greater than a dimension of said first joint portion in the direction perpendicular to said first direction.

11. A semiconductor device as described in any one of claims 2 to 10, further comprising: a second lead; and a second wire conductively joined to the first semiconductor element and the second lead, the second wire being covered with the sealing resin, the sealing resin having a first side facing one side of a second direction perpendicular to the first direction, and the second lead protruding from the first side.

12. The semiconductor device described in claim 11, wherein the second wire has a third joint portion conductively joined to the second lead, and the second wire is provided with a second convex body that covers the third joint portion and is covered by the sealing resin.

13. The semiconductor device described in claim 11, wherein the first lead has a first terminal portion and a first support portion connected to the first pad portion, the first terminal portion protruding from the first side surface, and the first support portion connected to one side of the first pad portion in the second direction and exposed from the first side surface.

14. The semiconductor device described in claim 13, wherein the first pad portion has a first back surface facing the opposite side to the first mounting surface in the first direction, the first pad portion is provided with a first recess recessed from the first back surface, and a portion of the sealing resin is accommodated in the first recess.

15. The semiconductor device according to claim 14, wherein the second bonding portion is spaced apart from the first recess when viewed in the first direction.

16. The semiconductor device according to claim 15, wherein the first recess is connected to the first hole.

17. The semiconductor device described in claim 14, further comprising: a third lead including a second pad portion having a second mounting surface facing the same side as the first mounting surface in the first direction; a second semiconductor element bonded to the second mounting surface; and a third wire conductively bonded to the first semiconductor element and the second semiconductor element, wherein the second pad portion is spaced apart from the first pad portion in the second direction, and at least a portion of the second pad portion, the second semiconductor element, and the third wire are covered with the sealing resin.

18. The semiconductor device described in claim 17, further comprising: a fourth lead; and a fourth wire conductively joined to the second semiconductor element and the fourth lead, wherein the fourth wire is covered with the sealing resin, the sealing resin has a second side facing opposite to the first side in the second direction, and the fourth lead protrudes from the second side.

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