Polyamide resin, photosensitive resin composition, cured product and method for producing same, and electronic component

Abstract

Polyamide resin (A) has a dicarboxylic acid residue and a diamine residue, and contains a specific molecular chain terminal.　Provided are: a photosensitive resin composition excelling in alkali developability and having a low dielectric loss tangent and a low dielectric constant; a cured product obtained from the photosensitive resin composition; an insulating film; and an electronic component.

Description

Polyamide resin, photosensitive resin composition, cured product, manufacturing method thereof, and electronic component

[0001] The present invention relates to a polyamide resin, a photosensitive resin composition, a cured product thereof, a method for producing the same, and an electronic component. More specifically, the present invention relates to a photosensitive resin composition suitable for use as a surface protective film or interlayer insulating film for electronic components such as semiconductor elements, an insulating layer for organic electroluminescent elements, etc.

[0002] Typical materials for surface protection films and interlayer insulating films of semiconductor elements, insulating layers of organic electrolytic elements, and planarizing films of TFT substrates include polyimide resins, which have excellent heat resistance and electrical insulation properties. Furthermore, to improve productivity, studies are being conducted on polyimides and their precursors that have been given negative or positive photosensitivity.

[0003] In recent years, with the expansion of semiconductor applications and the improvement of their performance, efforts have been made to reduce costs and increase integration by improving the efficiency of manufacturing processes. Therefore, semiconductor devices that form multilayer metal rewiring have attracted attention. The insulating film of such multilayer metal rewiring requires multiple high-temperature treatment processes during the manufacturing process. Furthermore, pattern processability using photolithography is required to improve productivity. In pattern processing, organic solvent development (organic development) has a large environmental impact due to the presence of volatile organic compounds (VOCs), so development using alkaline aqueous solutions (alkaline development), which has a low environmental impact, is required. Furthermore, in high-frequency communication device applications for high-speed wireless communication, a reduction in the dielectric loss tangent of the insulating film is required to reduce transmission loss.

[0004] As an alkali-developable positive-tone photosensitive polyimide material, a positive-tone resin composition containing a hydroxystyrene resin, a polyamic acid, and a quinone diazide compound has been proposed (Patent Document 1). Also proposed is a negative-tone photosensitive polyimide resin composition using an alkaline aqueous solution as a developer (Patent Document 2). As a means for lowering the dielectric loss tangent, a soluble polyimide using a dimer diamine with a low polarity structure (Patent Document 3) has been proposed.

[0005] JP 2007-156243 A International Publication No. 2004 / 109403 JP 2018-203959 A

[0006] When conventional techniques are applied to a multilayer wiring insulating film for a high-frequency communication device for high-speed wireless communication, for example, in Patent Documents 1 and 2, functional groups such as phenolic hydroxyl groups are required to impart solubility in an alkaline aqueous solution, which significantly increases the dielectric loss tangent. Also, in Patent Document 3, a structure with low polarity significantly reduces solubility in an alkaline aqueous solution, making alkaline development difficult.

[0007] In order to solve the above problems, the present invention has the following configuration: [1] A polyamide resin (A) having a dicarboxylic acid residue and a diamine residue, the polyamide resin (A) containing a molecular chain terminal represented by formula (1).

[0008]

[0009] In formula (1), Y １ represents a divalent organic group having 2 to 70 carbon atoms, Z represents a monovalent monocarboxylic acid residue having 1 to 20 carbon atoms, and R １ and R ２each independently represents a monovalent organic group having 1 to 10 carbon atoms. p and q represent integers of 0 to 3. * represents a bonding point for bonding to an amide bond. [2] The polyamide resin (A) according to [1], wherein the dicarboxylic acid residue contains an aliphatic chain structure having 1 to 30 carbon atoms. [3] The polyamide resin according to [1] or [2], wherein Z in formula (1) is a monovalent monocarboxylic acid residue having 1 to 20 carbon atoms and containing a carbon-carbon unsaturated double bond. [4] A photosensitive resin composition comprising the polyamide resin (A) according to any one of [1] to [3], and a photosensitizer (B), wherein the photosensitizer (B) is one or more compounds selected from the group consisting of (b-1) naphthoquinone diazide compounds, (b-2) photoradical polymerization initiators, and (b-3) photoacid generators. [5] The photosensitive resin composition according to any one of [1] to [4], further comprising (C) a thermal acid generator. [6] The photosensitive resin composition according to [5], wherein the (C) thermal acid generator is a thermal acid generator having a sulfonate ester structure. [7] A cured product obtained by curing the photosensitive resin composition according to any one of [4] to [6]. [8] A cured product containing a resin having a structure represented by formula (2).

[0010]

[0011] In formula (2), * represents a chemical bond. [9] Wavelength of 1350 to 1450 cm originating from the hexafluoroisopropanol group －１ Peak intensity at (I ａ ) wavelength of 1,050 to 1,150 cm resulting from the cyclization structure of the hexafluoroisopropanol group and the amide group －１ Peak intensity at (I ｂ ) ratio (I ａ / I ｂ) is 1 or less.

[10] A method for producing a cured product, comprising the steps of applying the photosensitive resin composition according to any one of [4] to [6] onto a substrate and drying to form a resin film, exposing the resin film to light, developing the exposed resin film, and heat-treating the developed resin film.

[11] An electronic component comprising the cured product according to any one of [7] to [9].

[12] An electronic component including a semiconductor package comprising at least a semiconductor element, a rewiring layer, a sealing resin, a ground, and an antenna wiring, wherein an insulating layer of the rewiring layer and / or the sealing resin comprises the cured product, and the sealing resin is located between the ground and the antenna wiring.

[0012] The present invention provides a photosensitive resin composition having excellent alkali developability and a low dielectric loss tangent, and a cured product, an electronic component, an antenna element, and a semiconductor package obtained from the photosensitive resin composition.

[0013] 1 is a schematic diagram illustrating a cross section of an example of a semiconductor package including an IC chip (semiconductor element), a rewiring layer, a sealing resin, and an antenna element.

[0014] The present invention will be described in detail below.

[0015] The present invention provides a polyamide resin (A) having a dicarboxylic acid residue and a diamine residue, and the polyamide resin (A) contains a molecular chain terminal represented by formula (1).

[0016]

[0017] In formula (1), Y １ represents a divalent organic group having 2 to 70 carbon atoms, Z represents a monovalent monocarboxylic acid residue having 1 to 20 carbon atoms, and R １ and R ２Each independently represents a monovalent organic group having 1 to 10 carbon atoms. p and q represent integers from 0 to 3. * represents the point of attachment to the amide bond. <(A) Polyamide Resin> The present invention relates to a (A) polyamide resin having a dicarboxylic acid residue and a diamine residue, wherein the (A) polyamide resin contains a molecular chain terminal represented by formula (1). Here, the dicarboxylic acid residue refers to a group in a dicarboxylic acid or dicarboxylic acid derivative other than a carboxy group or a functional group derived from a carboxylic acid, and the diamine residue refers to a group in a diamine or diamine derivative other than an amino group or a functional group derived from an amino group. For example, a diamine having an amide bond obtained by reacting a diamine with 3-nitrobenzoyl chloride followed by reduction is treated as a diamine derivative. For example, in the case of a diamine or diamine derivative having an amide bond obtained by reacting a diamine with a carboxylic acid, groups other than the amino group or functional group derived from the amino group are treated as diamine residues. Similarly, in the case of a dicarboxylic acid or dicarboxylic acid derivative having an amide bond obtained by reacting a diamine with a carboxylic acid, groups other than the carboxy group or functional group derived from the carboxylic acid are treated as dicarboxylic acid residues. Similarly, in the case of diamines or diamine derivatives having an amide bond obtained by reacting dicarboxylic acids with amines, groups other than the amino group or functional groups derived from the amino group are treated as diamine residues.Similarly, in the case of dicarboxylic acids or dicarboxylic acid derivatives having an amide bond obtained by reacting dicarboxylic acids with amines, groups other than the carboxy group or functional groups derived from the carboxylic acid are treated as dicarboxylic acid residues.

[0018] Polyamides have an amide bond, and include, for example, those obtained by reacting a dicarboxylic acid, a corresponding dicarboxylic acid dichloride, or a dicarboxylic acid activated diester with a diamine, a corresponding diisocyanate compound, or a trimethylsilylated diamine, and have dicarboxylic acid and / or derivative residues thereof and diamine and / or derivative residues thereof.

[0019] The polyamide resin (A) contains a molecular chain terminal represented by formula (1). Formula (1) has a hexafluoroisopropanol group. The hexafluoroisopropanol group is an acidic alcohol, and therefore alkali-soluble. Furthermore, the polyamide resin can be induced into a polyamide cyclized product by heat, and exhibits excellent dielectric properties.

[0020] In the present invention, alkali-soluble refers to a dissolution rate of 50 nm / min or more, determined from the decrease in film thickness when a solution of a resin dissolved in γ-butyrolactone is applied to a silicon wafer and prebaked at 120°C for 3 minutes to form a prebaked film with a film thickness of 10 μm±0.5 μm, the prebaked film is immersed in a 2.38 mass% aqueous solution of tetramethylammonium hydroxide at 23±1°C for 1 minute, and then rinsed with pure water. Examples of diamine compounds that can be used as the molecular chain terminal represented by formula (1) include, but are not limited to, the following. Commercially available products include "HFA-mTB," "HFA-MDA," "HFA-ODA," and "HFA-BIS-A-EF" manufactured by Central Glass Co., Ltd.

[0021] The (A) polyamide resin exhibits excellent dielectric properties because the molecular chain terminals have an amide structure, which allows the terminals to be cyclized, and the resin exhibits excellent alkaline developability. Furthermore, although the reason is unclear, the molecular chain terminals represented by formula (1) exhibit excellent alkaline developability. Here, the term "monocarboxylic acid residue" refers to a group other than a carboxy group or a functional group derived from a carboxylic acid, among monocarboxylic acids or monocarboxylic acid derivatives. One method for forming the molecular chain terminals represented by formula (1) is to cap the resin terminals with a terminal-capping agent such as a monocarboxylic acid, a monoacid chloride compound, or a monoactive ester compound.

[0022] As the monocarboxylic acid, monoacid chloride compound, and monoactive ester compound, known monocarboxylic acids, monoacid chloride compounds, and monoactive ester compounds can be used. Examples of the end-capping agent include acetyl chloride, propionyl chloride, cyclopropanecarbonyl chloride, cyclobutanecarbonyl chloride, cyclopentanecarbonyl chloride, cyclohexanecarbonyl chloride, isobutyryl chloride, butyryl chloride, isovaleryl chloride, valeryl chloride, hexanoyl chloride, heptanoyl chloride, capryloyl chloride, nonanoyl chloride, decanoyl chloride, 2-ethylhexanoyl chloride, 2-propylvaleryl chloride, 3,3-dimethylbutyryl chloride, 4-methylvaleryl chloride, 2,2-dimethylbutyryl chloride, methoxyacetyl chloride, 2-ethoxyacetyl chloride, chloroacetyl chloride, 2-chloropropionyl chloride, 3-chloropropionyl chloride, 2-fluoro- Examples of the monocarboxylic acid include, but are not limited to, methylbenzoyl chloride, 3-(methylthio)propionyl chloride, 2-thenoyl chloride, benzoyl chloride, o-toluoyl chloride, m-toluoyl chloride, p-toluoyl chloride, phenylacetyl chloride, 3-phenylpropionyl chloride, 3,5-dimethylbenzoyl chloride, phenoxyacetyl chloride, methoxybenzoyl chloride, 4-ethoxybenzoyl chloride, naphthoyl chloride, acryloyl chloride, methacryloyl chloride, crotonoyl chloride, tigloyl chloride, 3-ethoxyacryloyl chloride, cinnamoyl chloride, trans-8-methyl-6-nonenoyl chloride, linoleoyl chloride, norbornenecarboxylic acid chloride, and their monocarboxylic acids and monocarboxylic acid anhydrides. Here, the monocarboxylic acid anhydride refers to a compound obtained by condensation of two molecules of a monobasic acid. Examples of the monocarboxylic acid activated ester used as the end-capping agent include monocarboxylic acid activated ester compounds obtained by reacting the above-mentioned acid chloride with N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3-dicarboximide.

[0023] Z in formula (1) is preferably a monovalent monocarboxylic acid residue having 1 to 20 carbon atoms and containing a carbon-carbon unsaturated double bond. By containing a carbon-carbon unsaturated double bond, the carbon-carbon unsaturated double bond undergoes a crosslinking reaction during thermal curing, thereby improving the elongation of the cured product. Furthermore, because the carbon-carbon unsaturated double bond does not have polarity, it is less likely to affect the dielectric tangent of the cured product than other crosslinking groups.

[0024] Examples of end-capping agents containing a carbon-carbon unsaturated double bond include, but are not limited to, acryloyl chloride, methacryloyl chloride, crotonoyl chloride, tigloyl chloride, 3-ethoxyacryloyl chloride, cinnamoyl chloride, trans-8-methyl-6-nonenoyl chloride, linoleoyl chloride, norbornenecarboxylic acid chloride, their monocarboxylic acids, monocarboxylic acid anhydrides, and monocarboxylic acid active esters.

[0025] When a monocarboxylic acid, a monoacid chloride compound, or a monoactive ester compound is used, the introduction ratio thereof is preferably 0.1 mol parts or more, particularly preferably 5 mol parts or more, based on 100 mol parts of all carboxylic acid compounds contained in the (A) polyamide resin. On the other hand, in order to maintain a high molecular weight of the resin, the introduction ratio of the end-capping agent is preferably 50 mol parts or less, particularly preferably 30 mol parts or less, based on 100 mol parts of all carboxylic acid compounds contained in the (A) polyamide resin. Multiple different end groups may be introduced by reacting multiple end-capping agents. The term "total carboxylic acid compounds" as used herein refers to the total content of compounds having a carboxyl group, such as monocarboxylic acids and dicarboxylic acids.

[0026] In the present invention, the end-capping agent introduced into the polyamide resin (A) can be easily detected by gas chromatography (GC), pyrolysis gas chromatography (PGC), infrared spectroscopy and / or NMR measurement.

[0027] In the present invention, any diamine compound may be used to form a copolymer. Examples of diamine residues and their derivative residues include residues of aromatic diamines, bisaminophenol compounds, alicyclic diamines, alicyclic dihydroxydiamines, aliphatic diamines, and aliphatic dihydroxydiamines. These diamine residues and their derivative residues may contain heteroatoms in addition to the nitrogen and oxygen atoms contained in the amino groups and their derivatives.

[0028] Examples of diamine residues and bisaminophenol compound residues and their derivative residues include 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, m-phenylenediamine, p-phenylenediamine, 2,4-diaminotoluene, 2,5-diaminotoluene, 2,6-diaminotoluene, benzidine, 3,3'-dimethylbenzidine, 3,3'-dimethoxybenzidine, o- tolidine, 4,4'-diaminoterphenyl, 1,5-diaminonaphthalene, 2,5-diaminopyridine, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 1,2-cyclohexanediamine, 1,4-cyclohexanediamine, bis(4-aminocyclohexyl)methane, 3,6-dihydroxy-1,2-cyclohexanediamine, 2,5-dihydroxy-1,4-cyclohexanediamine, bis(3-hydroxy-4-aminocyclohexyl)methane, 4,4'-bis(p-aminophenyl) 4,4'-diamino-3,3'-dihydroxybiphenyl, bis(3-amino-4-hydroxyphenyl)propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(4-amino-3-hydroxyphenyl)

[0033] Examples of suitable diisocyanates include, but are not limited to, compounds such as 2,2-bis(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 2,2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, or residues of diisocyanate compounds or trimethylsilylated diamines thereof.

[0029] The polyamide resin (A) of the present invention contains a dicarboxylic acid residue. Examples of dicarboxylic acid residues and derivative residues thereof include, but are not limited to, residues of phthalic acid, isophthalic acid, terephthalic acid, 4,4'-dicarboxybiphenyl, 2,2'-bis(trifluoromethyl)-4,4'-dicarboxybiphenyl, 4,4'-benzophenonedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, 1,2-cyclohexanedicarboxylic acid, malonic acid, itaconic acid, maleic acid, succinic acid, glutaric acid, adipic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tetradecanedioic acid, hexadecanedioic acid, and dicarboxylic acid chlorides, dicarboxylic acid activated esters, and diformyl compounds thereof.

[0030] The dicarboxylic acid residue preferably contains an aliphatic chain structure having 1 to 30 carbon atoms. The aliphatic chain structure exhibits a low dielectric dissipation factor due to its low polarity. Furthermore, the inclusion of an aliphatic chain structure improves the mobility of the polymer, enabling the temperature at which a polyamide cyclization product is induced to be lowered (low-temperature curing). By enabling low-temperature curing, the polymer exhibits excellent dielectric dissipation factor even when heated at low temperatures. Furthermore, although the reason is unclear, the aliphatic chain structure improves alkaline developability and elongation. From the perspective of low-temperature curing, the number of carbon atoms in the aliphatic chain structure is preferably 4 or more, and from the perspective of alkaline developability, it is more preferably 15 or less. Examples of dicarboxylic acid residues containing an aliphatic chain structure having 1 to 30 carbon atoms include, but are not limited to, residues of malonic acid, itaconic acid, maleic acid, succinic acid, glutaric acid, adipic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tetradecanedioic acid, hexadecanedioic acid, or dicarboxylic acid chlorides, dicarboxylic acid active esters, or diformyl compounds thereof. When the total amount of dicarboxylic acid residues in the (A) polyamide resin is taken as 100 mol %, the total content of dicarboxylic acid residues having an aliphatic chain structure is preferably 15 mol % to 100 mol %, and more preferably 30 mol % to 100 mol %. By setting the content in this range, the polyamide resin exhibits excellent low-temperature curing, low dielectric tangent, elongation, and alkali developability.

[0031] The polyamide resin (A) of the present invention may contain a tricarboxylic acid residue and / or a derivative residue thereof. Here, the tricarboxylic acid residue refers to a group other than a carboxy group or a functional group derived from a carboxylic acid, among tricarboxylic acids or tricarboxylic acid derivatives. Examples of the tricarboxylic acid residue include residues of aromatic tricarboxylic acids, alicyclic tricarboxylic acids, and aliphatic tricarboxylic acids. The tricarboxylic acid residue may have a heteroatom other than the oxygen atom of the carboxy group.

[0032] Examples of tricarboxylic acid residues and derivative residues thereof include, but are not limited to, residues of 1,2,4-benzenetricarboxylic acid, 1,3,5-benzenetricarboxylic acid, 2,4,5-benzophenonetricarboxylic acid, 2,4,4'-biphenyltricarboxylic acid, 3,3',4'-tricarboxydiphenyl ether, 1,2,4-cyclohexanetricarboxylic acid, 1,3,5-cyclohexanetricarboxylic acid, or tricarboxylic acid chloride, tricarboxylic acid activated ester, or diformyl monocarboxylic acid.

[0033] In the present invention, (A) the polyamide resin may have a polybenzoxazole structure other than the polyamide resin, and a polyimide or polyimide precursor (polyamic acid or polyamic acid ester) structure.

[0034] The polyamide resin (A) preferably has a weight-average molecular weight of 3,000 or more and 100,000 or less. If the weight-average molecular weight is 5,000 or more, the mechanical properties of the cured product can be improved. More preferably, the weight-average molecular weight is 7,000 or more. On the other hand, if the weight-average molecular weight is 100,000 or less, the solubility in organic solvents can be improved, and if the weight-average molecular weight is 50,000 or less, it is more likely to satisfy all of good solvent solubility, good solubility in a developer, and high mechanical strength, which is preferable.

[0035] The weight average molecular weight (Mw) can be determined using gel permeation chromatography (GPC). For example, it can be measured using N-methyl-2-pyrrolidone (hereinafter sometimes abbreviated as NMP) as the developing solvent, and calculated as polystyrene equivalent. Furthermore, when two or more resins are contained as the (A) polyamide resin, it is sufficient that the weight average molecular weight of at least one of the resins is within the above range.

[0036] The polyamide resin (A) used in the present invention is preferably polymerized using a solvent. The type of polymerization solvent is not particularly limited as long as it can dissolve the dicarboxylic acids and diamines that are raw material monomers. Examples of the photosensitive resin composition include amides such as N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, N,N'-dimethylpropyleneurea, N,N-dimethylisobutyric acid amide, and methoxy-N,N-dimethylpropionamide, cyclic esters such as γ-butyrolactone, γ-valerolactone, δ-valerolactone, γ-caprolactone, ε-caprolactone, and α-methyl-γ-butyrolactone, carbonates such as ethylene carbonate and propylene carbonate, glycols such as triethylene glycol, phenols such as m-cresol and p-cresol, acetophenone, 1,3-dimethyl-2-imidazolidinone, sulfolane, and dimethyl sulfoxide. <(B) Photosensitizer> The photosensitive resin composition of the present invention contains the above-mentioned (A) polyamide resin and (B) photosensitizer.

[0037] The photosensitive resin composition of the present invention can form a relief pattern by containing the photosensitizer (B).

[0038] The (B) photosensitizer is preferably one or more compounds selected from the group consisting of (b-1) a naphthoquinone diazide compound, (b-2) a photoradical polymerization initiator, and (b-3) a photoacid generator. The inclusion of the (b-1) naphthoquinone diazide compound generates acid in the light-irradiated areas, increasing the solubility of the light-irradiated areas in an alkaline aqueous solution, thereby producing a positive-tone relief pattern in which the light-irradiated areas dissolve. Furthermore, the inclusion of the (b-2) photopolymerization initiator and a radically polymerizable compound allows the active radicals generated in the light-irradiated areas to proceed with radical polymerization of the ethylenically unsaturated bonds in the radically polymerizable compound, thereby producing a negative-tone relief pattern in which the light-irradiated areas become insoluble. Furthermore, the inclusion of the (b-3) photoacid generator is suitable for negative-tone pattern formation, as it can promote cationic polymerization. Furthermore, when a resin or the like has an acidic group protected by an acid-dissociable group, the composition is suitable for positive-tone pattern formation, as it liberates alkali-soluble groups upon exposure. If necessary, (b-1), (b-2), and (b-3) may be combined.

[0039] Examples of (b-1) naphthoquinone diazide compounds include those in which the sulfonic acid of quinone diazide is bonded to a polyhydroxy compound via an ester bond, those in which the sulfonic acid of quinone diazide is bonded to a polyamino compound via a sulfonamide bond, and those in which the sulfonic acid of quinone diazide is bonded to a polyhydroxypolyamino compound via an ester bond and / or a sulfonamide bond. It is preferable that 50 mol% or more of the functional groups of these polyhydroxy compounds or polyamino compounds are substituted with quinone diazide. Furthermore, it is preferable to contain two or more (b-1) naphthoquinone diazide compounds, which allows for the production of highly sensitive photosensitive resin compositions. From the viewpoint of achieving high sensitivity, the content of the (b-1) naphthoquinone diazide compound is preferably 3 to 40 parts by mass per 100 parts by mass of the (A) polyamide resin.

[0040] In the present invention, either a 5-naphthoquinone diazide sulfonyl group or a 4-naphthoquinone diazide sulfonyl group is preferably used as the quinone diazide. 4-naphthoquinone diazide sulfonyl ester compounds have absorption in the i-line region of a mercury lamp and are suitable for i-line exposure. 5-naphthoquinone diazide sulfonyl ester compounds have absorption extending to the g-line region of a mercury lamp and are suitable for g-line exposure. In the present invention, it is preferable to select a 4-naphthoquinone diazide sulfonyl ester compound or a 5-naphthoquinone diazide sulfonyl ester compound depending on the wavelength of exposure. Furthermore, naphthoquinone diazide sulfonyl ester compounds having both a 4-naphthoquinone diazide sulfonyl group and a 5-naphthoquinone diazide sulfonyl group in the same molecule may be contained, or a 4-naphthoquinone diazide sulfonyl ester compound and a 5-naphthoquinone diazide sulfonyl ester compound may be contained.

[0041] Specific examples of the (b-2) photopolymerization initiator include those described in paragraphs

[0223] to

[0276] of WO 2019 / 087985. Among these, it is preferable to use an oxime ester-based photopolymerization initiator, from the viewpoint of achieving high sensitivity. Two or more of these may be used.

[0042] In the present invention, the content of the (b-2) photopolymerization initiator is preferably 0.1 to 20 parts by mass relative to 100 parts by mass of the (A) polyamide resin. If the content is 0.1 part by mass or more, sufficient radicals are generated by light irradiation, improving sensitivity. On the other hand, if the content is 20 parts by mass or less, curing of the unexposed areas due to excessive radical generation does not occur, improving alkaline developability.

[0043] The photoacid generator (b-3) is a compound that has the property of generating an acid by cleaving a bond or reacting upon exposure to light. Examples of (b-3) include ionic compounds and nonionic compounds. The ionic compound is preferably a triorganosulfonium salt compound. The nonionic compound is preferably a halogen-containing compound, a diazomethane compound, a sulfone compound, a sulfonate ester compound, a carboxylate ester compound, a sulfonimide compound, a phosphate ester compound, or a sulfonebenzotriazole compound.

[0044] Although known photoacid generators can be used as the (b-3) photoacid generator, from the viewpoints of cationic curability and copper corrosivity, (b-3) preferably contains a sulfonium salt containing at least one counter anion selected from the group consisting of borate ions, phosphate ions, and gallate ions. Here, the borate ions are complex ions having boron as the central atom, the phosphate ions are complex ions having phosphorus as the central atom, and the gallate ions are complex ions having gallium as the central atom.

[0045] Examples of the cation that forms the sulfonium salt include triphenylsulfonium, tri-p-tolylsulfonium, 1-naphthyldiphenylsulfonium, tris(4-fluorophenyl)sulfonium, tri-1-naphthylsulfonium, tris(4-hydroxyphenyl)sulfonium, 4-(phenylthio)phenyldiphenylsulfonium, 4-(4-methoxyphenylthio)phenylbis(4-methoxyphenyl)sulfonium, 4-(phenylthio)phenylbis(4-fluorophenyl)sulfonium, 4-(phenylthio)phenylbis(4-fluorophenyl)sulfonium, bis(4-methylphenyl)sulfonio)phenylbis(4-methoxyphenyl)sulfonium, 4-(phenylthio)phenyldi-p-tolylsulfonium, [4-(2-thioxanthonylthio)phenyl]diphenylsulfonium, bis[4-(diphenylsulfonio)phenyl]sulfide, bis[4-{bis[4-(2-hydroxyethoxy)phenyl]sulfonio}phenyl]sulfide, bis{4-[bis(4-fluorophenyl)sulfonio]phenyl}sulfide, bis{4-[bis(4-methylphenyl)sulfonio]phenyl}sulfide, bis {4-[bis(4-methoxyphenyl)sulfonio]phenyl}sulfide, 4-(4-benzoyl-2-chlorophenylthio)phenylbis(4-fluorophenyl)sulfonium, 4-(4-benzoyl-2-chlorophenylthio)phenyldiphenylsulfonium, 4-(4-benzoylphenylthio)phenylbis(4-fluorophenyl)sulfonium, 4-(4-benzoylphenylthio)phenyldiphenylsulfonium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracen-2-yldi-p -tolyl sulfonium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracen-2-yldiphenylsulfonium, 2-[(di-p-tolyl)sulfonio]thioxanthone, 5-(4-ethoxyphenyl)thiaanthrenium, 5-(2,4,6-trimethylphenyl)thiaanthrenium and other triarylsulfoniums; diphenylphenacylsulfonium, diphenyl 4-nitrophenacylsulfonium, diphenylbenzylsulfonium, diphenylmethylsulfonium and other diarylsulfoniums;Monoarylsulfoniums such as phenylmethylbenzylsulfonium, 4-hydroxyphenylmethylbenzylsulfonium, 4-methoxyphenylmethylbenzylsulfonium, 4-acetocarbonyloxyphenylmethylbenzylsulfonium, 2-naphthylmethyl(1-ethoxycarbonyl)ethylsulfonium, phenylmethylphenacylsulfonium, 4-methoxyphenylmethylphenacylsulfonium, 4-acetocarbonyloxyphenylmethylphenacylsulfonium, 2-naphthylmethylphenacylsulfonium, 2-naphthyloctadecylphenacylsulfonium, and 9-anthracenylmethylphenacylsulfonium; dimethylphenacylsulfonium, phenacyltrhydrothiophenium, dimethylbenzylsulfonium, benzyltetrahydrothiophenium, and the like, but are not limited to these;

[0046] Examples of borate ions include, but are not limited to, pentafluorophenylborate, trifluorophenylborate, tetrafluorophenylborate, trifluoromethylphenylborate, bis(trifluoromethyl)phenylborate, pentafluoroethylphenylborate, bis(pentafluoroethyl)phenylborate, fluoro-bis(trifluoromethyl)phenylborate, fluoro-pentafluoroethylphenylborate, fluoro-bis(pentafluoroethyl)phenylborate, and the like.

[0047] Examples of phosphate ions include, but are not limited to, hexafluorophosphate, tris(pentafluoroethyl)trifluorophosphate, and the like.

[0048] Gallate ions include, but are not limited to, tetrakis(pentafluorophenyl)gallate, tetrakis(3,5-bis(trifluoromethyl)phenyl)gallate, and the like.

[0049] The content of the (b-3) photoacid generator is preferably 0.5 to 20 parts by mass per 100 parts by mass of the (A) polyamide resin. <(C) Thermal Acid Generator> The photosensitive resin composition of the present invention preferably contains a (C) thermal acid generator. A thermal acid generator is a compound that generates an acid upon heating. The thermal decomposition onset temperature of the (C) thermal acid generator is preferably 120°C or higher, more preferably 130°C or higher, and even more preferably 140°C or higher. A thermal decomposition temperature of 120°C or higher can prevent acid generation during the pre-bake step during pattern processing. Furthermore, the thermal decomposition onset temperature of the (C) thermal acid generator is preferably 250°C or lower, more preferably 240°C or lower, and even more preferably 230°C or lower. Setting the thermal decomposition temperature to 250°C or lower allows sufficient acid to be generated during the heating step. In the present invention, generating acid during the heating step can promote the cyclization reaction of the (A) polyamide resin, enabling low-temperature curing and exhibiting an excellent dielectric tangent even when heated at low temperatures.

[0050] The thermal acid generator (C) in the present invention may be any compound that has the function of generating an acid upon heating, and compounds that have the function of generating an acid upon exposure to light such as ultraviolet light are also included in the definition of the thermal acid generator (C), although quinone diazide compounds are not included in the definition of the thermal acid generator (C).

[0051] The acid generated from the thermal acid generator (C) is preferably a strong acid, for example, an arylsulfonic acid such as p-toluenesulfonic acid or benzenesulfonic acid, an alkylsulfonic acid such as methanesulfonic acid, ethanesulfonic acid or butanesulfonic acid, or camphorsulfonic acid.

[0052] Examples of the thermal acid generator (C) include the sulfonium salts and sulfonate esters shown below. Two or more of these may be contained. From the viewpoint of generating heat upon heating, it is preferable that the sulfonium salt contains a compound selected from the group consisting of monoarylsulfonium salts and trialkylsulfonium salts.

[0053] Among the thermal acid generators (C), it is preferable that the thermal acid generator (C) is a thermal acid generator having a sulfonate ester structure, because it has little effect on the dielectric tangent and promotes the cyclization reaction of the polyamide resin even when added in a small amount. Examples of the sulfonate ester include a structure represented by formula (3) or (4).

[0054]

[0055] In formula (3), R ３ and R ４ each independently represents a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms which may have a substituent, or an aryl group having 6 to 20 carbon atoms which may have a substituent. Examples of the substituent include a hydroxyl group, a halogen atom, a cyano group, a vinyl group, an acetylene group, and a linear or cyclic alkyl group having 1 to 10 carbon atoms.

[0056]

[0057] In formula (4), R ５ represents a monovalent organic group having 1 to 20 carbon atoms. ５ The monovalent organic group having 1 to 20 carbon atoms that can be taken by CF ３ , an alkyl group, an aryl group, a perfluoroalkyl group, a structure represented by formula (5), and the like.

[0058]

[0059] In formula (5), * represents a bond.

[0060] Examples of the compound represented by the formula (3) include methyl methanesulfonate, ethyl methanesulfonate, propyl methanesulfonate, butyl methanesulfonate, phenyl methanesulfonate, methyl ethanesulfonate, ethyl ethanesulfonate, propyl ethanesulfonate, butyl ethanesulfonate, phenyl ethanesulfonate, methyl propanesulfonate, ethyl propanesulfonate, propyl propanesulfonate, butyl propanesulfonate, phenyl propanesulfonate, methyl butanesulfonate, and butanesulfonate. ethyl octanesulfonate, propyl butanesulfonate, butyl butanesulfonate, phenyl butanesulfonate, methyl octanesulfonate, ethyl octanesulfonate, propyl octanesulfonate, butyl octanesulfonate, phenyl octanesulfonate, methyl p-toluenesulfonate, ethyl p-toluenesulfonate, propyl p-toluenesulfonate, butyl p-toluenesulfonate, phenyl p-toluenesulfonate, methoxyphenyl methanesulfonate, methoxyethyl methanesulfonate, Examples of the compound represented by the formula (4) include 1,4-butanediol dimethanesulfonate, methoxyethyl p-toluenesulfonate, and 1,3-propanediol di-p-toluenesulfonate. Examples of the compound represented by the formula (4) include "Irgacure" (registered trademark) PAG103, PAG121 (trade name, manufactured by BASF Japan Ltd.), PA-411, and PA-480 (trade name, manufactured by Heraeus K.K.). Other examples of thermal acid generators having a sulfonate ester structure include PAI-01, PAI-101, Examples of such polyimides include PAI-106, PAI-1001, PAI-1002, PAI-1003, and PAI-1004 (trade names, manufactured by Midori Chemical Co., Ltd.), SP-082, SP-601, SP-606, SP-607, and SP-612 (trade names, manufactured by ADEKA Corporation), NIT, MIN, ILP-110, ILP-110N, ILP-118, ILP-113, PA-223, and PA-298 (trade names, manufactured by Heraeus K.K.), and NAI-105, NAI-106, and NAI-109 (trade names, manufactured by Midori Chemical Co., Ltd.).

[0061] The content of the (C) thermal acid generator is preferably 1 part by mass or more, more preferably 2 parts by mass or more, and even more preferably 3 parts by mass or more, per 100 parts by mass of the (A) polyamide resin, from the viewpoint of promoting the cyclization reaction of the polyamide resin. Furthermore, the content of the (C) thermal acid generator is preferably 15 parts by mass or less, more preferably 10 parts by mass or less, and even more preferably 8 parts by mass or less, per 100 parts by mass of the (A) polyamide resin, from the viewpoint of imparting high heat resistance to the cured product. <Radical Polymerizable Compound> The photosensitive resin composition of the present invention may contain a radical polymerizable compound. In the case of negative photosensitivity, the inclusion of a compound having two or more ethylenically unsaturated bonds improves the crosslinking density during exposure, thereby further improving exposure sensitivity. Furthermore, in both negative photosensitivity and positive photosensitivity, the chemical resistance of the cured film is further improved. Specific examples of the radical polymerizable compound include the radical polymerizable compounds described in paragraphs

[0189] to

[0222] of WO 2019 / 087985.

[0062] The molecular weight of the radical polymerizable compound is preferably 5,000 or less, and more preferably 2,000 or less. A molecular weight of 5,000 or less is preferable because compatibility with the (A) polyamide resin is maintained and the occurrence of phenomena such as whitening of the film can be reduced.

[0063] The amount of the radical polymerizable compound added is preferably 5 to 100 parts by mass, more preferably 10 to 50 parts by mass, per 100 parts by mass of the polyamide resin (A). Within this range, it is easier to achieve improved exposure sensitivity and chemical resistance of the cured film while maintaining the desired properties. <Cationically Polymerizable Compound> The photosensitive resin composition of the present invention may contain a cationically polymerizable compound. In the case of negative photosensitivity, the inclusion of a cationically polymerizable compound improves crosslink density during exposure, thereby improving exposure sensitivity. Examples of the cationically polymerizable compound include epoxy compounds, oxetane compounds, ethylenically unsaturated compounds (such as vinyl ethers and styrenes), bicycloorthoesters, spiroorthocarbonates, and spiroorthoesters.

[0064] As the epoxy compound, known epoxy compounds can be used, such as aromatic epoxy compounds, alicyclic epoxy compounds, and aliphatic epoxy compounds.

[0065] Examples of aromatic epoxy compounds include glycidyl ethers of mono- or polyhydric phenols having at least one aromatic ring (phenol, bisphenol A, phenol novolak, and alkylene oxide adducts thereof).

[0066] Examples of alicyclic epoxy compounds include compounds obtained by epoxidizing a compound having at least one cyclohexene or cyclopentene ring with an oxidizing agent (e.g., 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate).

[0067] Examples of the aliphatic epoxy compound include polyglycidyl ethers of aliphatic polyhydric alcohols or their alkylene oxide adducts (1,4-butanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, etc.), polyglycidyl esters of aliphatic polybasic acids (diglycidyl tetrahydrophthalate, etc.), and epoxidized long-chain unsaturated compounds (epoxidized soybean oil, epoxidized polybutadiene, etc.).

[0068] As the oxetane compound, known oxetane compounds can be used, such as 3-ethyl-3-hydroxymethyloxetane, 2-ethylhexyl(3-ethyl-3-oxetanylmethyl)ether, 2-hydroxyethyl(3-ethyl-3-oxetanylmethyl)ether, 2-hydroxypropyl(3-ethyl-3-oxetanylmethyl)ether, 1,4-bis[(3-ethyl-3-oxetanylmethoxy)methyl]benzene, oxetanylsilsesquioxetane, and phenol novolac oxetane.

[0069] As the ethylenically unsaturated compound, known cationically polymerizable monomers can be used, including aliphatic monovinyl ethers, aromatic monovinyl ethers, polyfunctional vinyl ethers, styrene, and cationically polymerizable nitrogen-containing monomers.

[0070] Examples of the aliphatic monovinyl ether include methyl vinyl ether, ethyl vinyl ether, butyl vinyl ether, and cyclohexyl vinyl ether.

[0071] Examples of aromatic monovinyl ethers include 2-phenoxyethyl vinyl ether, phenyl vinyl ether, and p-methoxyphenyl vinyl ether.

[0072] Examples of polyfunctional vinyl ethers include butanediol-1,4-divinyl ether and triethylene glycol divinyl ether.

[0073] Examples of styrenes include styrene, α-methylstyrene, p-methoxystyrene, and 4-tert-butoxystyrene.

[0074] Examples of the cationically polymerizable nitrogen-containing monomer include N-vinylcarbazole and N-vinylpyrrolidone.

[0075] Examples of bicyclo orthoesters include 1-phenyl-4-ethyl-2,6,7-trioxabicyclo[2.2.2]octane and 1-ethyl-4-hydroxymethyl-2,6,7-trioxabicyclo-[2.2.2]octane.

[0076] Examples of spiro orthocarbonates include 1,5,7,11-tetraoxaspiro[5.5]undecane and 3,9-dibenzyl-1,5,7,11-tetraoxaspiro[5.5]undecane.

[0077] Examples of spiro orthoesters include 1,4,6-trioxaspiro[4.4]nonane, 2-methyl-1,4,6-trioxaspiro[4.4]nonane, and 1,4,6-trioxaspiro[4.5]decane.

[0078] The amount of the cationically polymerizable compound added is preferably 5 to 200 parts by mass, more preferably 10 to 150 parts by mass, per 100 parts by mass of the polyamide resin (A). Within this range, it becomes easier to achieve improved exposure sensitivity and chemical resistance of the cured film while maintaining the desired properties. <Thermal Crosslinking Agent> The photosensitive resin composition of the present invention may contain a thermal crosslinking agent that crosslinks by heat. By including a thermal crosslinking agent, the heat resistance of the cured film at high temperatures can be further improved. There are no limitations on the thermal crosslinking agent as long as it crosslinks by heat, and examples include compounds having an alkoxymethyl structure.

[0079] The compound having an alkoxymethyl structure may contain known compounds. For example, DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML -BisOCHP-Z, DML-BPC, DML-BisOC-P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, Tr iML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML-BPAF, TML-BPAP, TM Examples of the NIKALAC copolymer include OM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, and HMOM-TPHAP (all of which are trade names available from Honshu Chemical Industry Co., Ltd.), NIKALAC (registered trademark) MX-290, NIKALAC (registered trademark) MX-280, NIKALAC (registered trademark) MX-270, NIKALAC (registered trademark) MX-279, NIKALAC (registered trademark) MW-100LM, and NIKALAC (registered trademark) MX-750LM (all of which are trade names available from Sanwa Chemical Co., Ltd.).

[0080] Among these compounds, from the viewpoint of heat resistance of the cured film obtained after thermal curing, a compound selected from any one of "NIKALAC" (registered trademark) MX-290, "NIKALAC" (registered trademark) MX-280, "NIKALAC" (registered trademark) MX-270, "NIKALAC" (registered trademark) MX-279, "NIKALAC" (registered trademark) MW-100LM, and "NIKALAC" (registered trademark) MX-750LM is preferred from the viewpoint of storage stability.

[0081] The amount of the thermal crosslinking agent added is preferably 1 part by mass or more, more preferably 5 parts by mass or more, per 100 parts by mass of the polyamide resin (A) in order to obtain high chemical resistance of the cured film. Furthermore, in order to reduce degassing, the amount is preferably 100 parts by mass or less, more preferably 80 parts by mass or less. <Adhesion improver> The photosensitive resin composition of the present invention may contain an adhesion improver. Examples of adhesion improvers include silane coupling agents such as vinyltrimethoxysilane, vinyltriethoxysilane, epoxycyclohexylethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and 3-acryloxypropyltrimethoxysilane, titanium chelating agents, aluminum chelating agents, and compounds obtained by reacting an aromatic amine compound with an alkoxy group-containing silicon compound, with trimethoxyvinylsilane, triethoxyvinylsilane, 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, and p-styryltrimethoxysilane being particularly preferred, and p-styryltrimethoxysilane being more preferred. The adhesion improver may contain two or more of these.

[0082] The content of the adhesion improver in the photosensitive resin composition is preferably 0.1 to 10% by mass, based on 100% by mass of the total resin. By setting the content within this range, it is possible to provide a photosensitive resin composition that has high adhesion to the substrate and excellent resistance to oxygen plasma and UV ozone treatment. <Surfactant> The photosensitive resin composition of the present invention may contain a surfactant. By containing a surfactant, it is possible to improve the wettability with the substrate and improve the film thickness uniformity of the coating film. Commercially available compounds can be used as the surfactant. Specific examples of silicone surfactants include the SH series, SD series, and ST series from DuPont Toray Specialty Materials Co., Ltd., the BYK series from BYK Japan K.K., the KP series from Shin-Etsu Chemical Co., Ltd., the Disfoam series from NOF Corporation, and the TSF series from Momentive Performance Materials Japan LLC. Specific examples of fluorine-based surfactants include the Megafac (registered trademark) series from DIC Corporation, the Fluorad series from 3M Japan Ltd., the Surflon (registered trademark) series and Asahiguard (registered trademark) series from AGC Inc., the EF series from Mitsubishi Materials Electronic Chemicals Co., Ltd., and the Polyfox series from Omnova Solutions, Inc. Specific examples of surfactants obtained from acrylic and / or methacrylic polymers include the Polyflow series from Kyoeisha Chemical Co., Ltd., and the Disparlon (registered trademark) series from Kusumoto Chemicals Co., Ltd., but are not limited to these.

[0083] The content of the surfactant is preferably 0.001% by mass or more and 1% by mass or less, based on 100% by mass of the total resin. By setting the content within the above range, it is possible to improve the wettability of the photosensitive resin composition with the substrate and the uniformity of the film thickness of the coating film without causing defects such as bubbles or pinholes. <Antioxidant> The photosensitive resin composition of the present invention may contain an antioxidant. By containing an antioxidant, yellowing of the cured film during the subsequent heat treatment and deterioration of mechanical properties such as strength at break can be suppressed. In addition, it is preferable because the rust-preventing effect on metal materials can suppress oxidation of the metal materials.

[0084] The antioxidant is preferably a hindered phenol-based antioxidant or a hindered amine-based antioxidant. The number of phenol groups or amino groups in one molecule is preferably 2 or more, more preferably 4 or more, since this makes it easier to obtain an antioxidant effect.

[0085] Specific examples of the antioxidant include the antioxidants described in

[0063] to

[0070] of JP-A-2018-165819.

[0086] The amount of antioxidant added is preferably 0.1 parts by mass or more and 10.0 parts by mass or less, and more preferably 0.3 parts by mass or more and 5.0 parts by mass or less, relative to 100 parts by mass of the polyamide resin (A). Within this range, developability and the effect of suppressing discoloration due to heat treatment can be maintained at an appropriate level. <Solvent> The photosensitive resin composition of the present invention may contain a solvent. Examples of the solvent include polar aprotic solvents such as N-methyl-2-pyrrolidone, γ-butyrolactone, γ-valerolactone, δ-valerolactone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, 1,3-dimethyl-2-imidazolidinone, N,N'-dimethylpropyleneurea, N,N-dimethylisobutyric acid amide, and methoxy-N,N-dimethylpropionamide; ethers such as tetrahydrofuran, dioxane, propylene glycol monomethyl ether, and propylene glycol monoethyl ether; ketones such as acetone, methyl ethyl ketone, and diisobutyl ketone; esters such as ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, propylene glycol monomethyl ether acetate, and 3-methyl-3-methoxybutyl acetate; alcohols such as ethyl lactate, methyl lactate, diacetone alcohol, and 3-methyl-3-methoxybutanol; and aromatic hydrocarbons such as toluene and xylene. Two or more of these may be contained.

[0087] The content of the solvent is preferably 100 parts by mass or more per 100 parts by mass of the (A) polyamide resin in order to dissolve the composition, and is preferably 1,500 parts by mass or less in order to form a coating film with a thickness of 1 μm or more. <Method for producing a cured product> In the process of applying the photosensitive resin composition of the present invention to a substrate and drying it to form a resin film, the photosensitive resin composition of the present invention is first applied to the substrate to obtain a coating film of the photosensitive resin composition. Examples of the substrate include, but are not limited to, silicon wafers, ceramics, gallium arsenide, organic circuit boards, inorganic circuit boards, and these substrates on which circuit components are arranged.

[0088] Examples of the coating method include spin coating, slit coating, dip coating, spray coating, printing, etc. The coating thickness varies depending on the coating method, the solids concentration of the composition, the viscosity, etc., but the coating is usually carried out so that the film thickness after drying is 0.1 to 150 μm.

[0089] Prior to coating, the substrate to which the photosensitive resin composition is to be applied may be pretreated with the adhesion improver described above. Examples of pretreatment methods include treating the substrate surface using a solution of 0.5 to 20% by mass of the adhesion improver dissolved in a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, or diethyl adipate, followed by spin coating, slit die coating, bar coating, dip coating, spray coating, or steam treatment. After treating the substrate surface, a reduced-pressure drying treatment may be performed, if necessary. Furthermore, the reaction between the substrate and the adhesion improver may then be promoted by heat treatment at 50°C to 280°C. Drying is preferably performed using an oven, hot plate, infrared rays, or the like, at a temperature of 50°C to 140°C for 1 minute to 2 hours.

[0090] In the step of exposing the photosensitive resin film, the photosensitive resin film is exposed to actinic rays through a mask having a desired pattern. Actinic rays used for exposure include ultraviolet rays, visible rays, electron beams, X-rays, etc., but in the present invention, it is preferable to use actinic rays including g-rays (436 nm), h-rays (405 nm), or i-rays (365 nm), which are common exposure wavelengths.

[0091] The electronic component of the present invention may optionally include a post-exposure bake (hereinafter referred to as PEB) step, which is preferably performed on the exposed photosensitive resin film at 50°C to 150°C for 1 minute to 2 hours using an oven, a hot plate, infrared rays, or the like.

[0092] In the process of developing the photosensitive resin film, after exposure, exposed or unexposed areas are removed using a developer. The developer used is preferably an aqueous solution of an alkaline compound such as tetramethylammonium, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, or hexamethylenediamine. In some cases, the aqueous solution of these alkaline compounds may contain one or more polar solvents such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, γ-butyrolactone, or dimethylacrylamide; alcohols such as methanol, ethanol, or isopropanol; esters such as ethyl lactate or propylene glycol monomethyl ether acetate; or ketones such as cyclopentanone, cyclohexanone, isobutyl ketone, or methyl isobutyl ketone. After development, the film is generally rinsed with an organic solvent or water. Here, the film may be rinsed with an alcohol such as ethanol or isopropyl alcohol, or an ester such as ethyl lactate or propylene glycol monomethyl ether acetate.

[0093] Dry etching may be used as a pattern formation method for a photosensitive resin composition. Specifically, the method includes the steps of applying the photosensitive resin composition of the present invention to a substrate, volatilizing it at 80°C or higher but lower than 150°C, curing it at 150°C or higher but lower than 350°C, and ablation processing using a carbon dioxide laser or a UV laser. The UV laser irradiation conditions are not particularly limited, but typically excimer lasers such as ArF (193 nm), KrF (248 nm), XeCl (308 nm), and XeCl (351 nm), or YAG laser (355 nm) are used. Carbonate lasers have inferior resolution compared to UV lasers, but because of their low equipment costs and economical advantages, carbonate lasers may be used for applications that do not require high resolution.

[0094] Next, in the process of heat-treating the resin film after development, the photosensitive resin film after pattern processing is heated in an oven. After development, a temperature of 150°C to 350°C is applied to promote a thermal crosslinking reaction and harden the film. This heat treatment is carried out by selecting a certain temperature and gradually increasing the temperature, or by selecting a certain temperature range and continuously increasing the temperature for 5 minutes to 5 hours. As an example, heat treatment is carried out at 130°C and 200°C for 30 minutes each. In the present invention, the lower limit of the curing conditions is preferably 170°C or higher, but more preferably 180°C or higher to ensure sufficient hardening. There is no particular upper limit to the curing conditions, but from the perspective of suppressing film shrinkage and stress, 280°C or lower is preferred, 250°C or lower is more preferred, and 230°C or lower is even more preferred. <Cured Product> In the present invention, "curing" refers to heat-treating a resin or photosensitive resin composition at 150°C or higher, and "cured product" refers to a resin or photosensitive resin composition that has been heat-treated at 150°C or higher. By carrying out the heat treatment, the crosslinking reaction and the ring-closing reaction of the polyamide resin proceed.

[0095] The cured product of the present invention has any one of the first to third aspects.

[0096] A first aspect of the cured product of the present invention is obtained by curing the photosensitive resin composition of the present invention. The cured product of the present invention is characterized by having a low dielectric loss tangent.

[0097] A second embodiment of the cured product of the present invention contains a resin having a structure represented by formula (2).

[0098]

[0099] In formula (2), * indicates a chemical bond.

[0100] By containing a resin having the structure represented by formula (2), the cured product has a low dielectric loss tangent.

[0101] In addition, a third embodiment of the cured product of the present invention is a cured product having a wavelength of 1,350 to 1,450 cm derived from a hexafluoroisopropanol group. －１ Peak intensity at (I ａ ) wavelength of 1,050 to 1,150 cm resulting from the cyclization structure of the hexafluoroisopropanol group and the amide group －１ Peak intensity at (I ｂ ) ratio (I ａ / I ｂ ) is 1 or less. ａ / I ｂ When the ratio is 1 or less, there are few highly polar hexafluoroisopropanol groups and many cyclized structures of low polarity hexafluoroisopropanol groups and amide groups, and the cured product has a low dielectric loss tangent. The cyclized structure of hexafluoroisopropanol groups and amide groups is a structure represented by formula (2).

[0102]

[0103] In formula (2), * indicates a chemical bond.

[0104] I ａ / I ｂ The ratio is preferably 0.6 or less, more preferably 0.3 or less. These peak intensities can be calculated by infrared absorption spectrum measurement. <Method for producing electronic components> A cured product formed from the photosensitive resin composition of the present invention can be used as an insulating film or protective film that constitutes an electronic component.

[0105] Here, examples of electronic components include active components having semiconductors such as transistors, diodes, integrated circuits (ICs), and memories, as well as passive components such as resistors, capacitors, and inductors. Electronic components using semiconductors are also called semiconductor devices.

[0106] Specific examples of the cured product in electronic components include passivation films for semiconductors, surface protective films for semiconductor elements, TFTs (Thin Film Transistors), and the like, interlayer insulating films such as interlayer insulating films between rewirings in multilayer wiring for high-density packaging of 2 to 10 layers, insulating films and protective films for touch panel displays, and insulating layers for organic electroluminescent devices; however, the cured product is not limited to these and can have a variety of structures.

[0107] The substrate surface on which the cured product is formed can be appropriately selected depending on the application and process, and examples thereof include silicon, ceramics, glass, metal, and epoxy resin, and a plurality of these may be arranged on the same surface.

[0108] Among the electronic components of the present invention, examples of semiconductor devices include chip-first fan-out wafer-level packages and chip-first fan-out panel-level packages. Chip-first fan-out wafer-level packages and chip-first fan-out panel-level packages are semiconductor packages in which an extension section is provided around a semiconductor chip using an encapsulating resin such as epoxy resin, rewiring is performed from electrodes on the semiconductor chip to the extension section, and solder balls are also mounted on the extension section to ensure the required number of terminals. In chip-first fan-out wafer-level packages and chip-first fan-out panel-level packages, wiring is installed so as to straddle the boundary formed by the main surface of the semiconductor chip and the main surface of the encapsulating resin, and a cured product is arranged as an insulating film between the wiring.

[0109] As an example of the method for manufacturing an electronic component of the present invention, a method for manufacturing a semiconductor device using a redistribution layer (RDL) first process is shown. A barrier metal such as Ti is formed on a support substrate such as a glass substrate or a silicon wafer by sputtering, a Cu seed (seed layer) is further formed on top of that by sputtering, and then electrode pads made of Cu are formed by plating. Next, the photosensitive resin composition of the present invention is applied to the entire surface of the support substrate on which the electrode pads have been formed and dried to form a photosensitive resin film. Lines and spaces, square, or hole patterns are formed in the resulting photosensitive resin film as needed. A heat treatment is then performed to form a cured layer. This layer becomes an insulating film. Next, a seed layer is formed again by sputtering, and metal wiring (redistribution wiring) made of Cu is formed by plating. Subsequently, the seed layer process through the metal wiring formation process are repeated to form a multilayer wiring structure. Next, the photosensitive resin composition of the present invention is again applied and patterned, followed by heat treatment and curing to form an insulating film. Then, Cu posts are formed on the metal wiring in the openings of the insulating film using a plating method. The pitch of the Cu posts and the pitch of the conductive portions of the semiconductor chip are made equal. That is, the pitch of the conductive portions of the semiconductor chip is finer than the pitch of the electrode pads, and each rewiring layer constituting the multilayer wiring structure gradually becomes finer pitch from the electrode pads to the Cu posts, thereby multiplying the wiring. The thickness of adjacent insulating films in the multilayer wiring structure also becomes the same or thinner as they approach the semiconductor chip. Next, the semiconductor chip is connected to the Cu posts via solder bumps. This electrically connects the electrode pads and the semiconductor chip via the metal wiring and solder bumps. The semiconductor chip is then encapsulated with an encapsulating resin to form a semiconductor package, and the support substrate and the rewiring layer are peeled off to separate the semiconductor package. In this way, a semiconductor device having a multilayer wiring structure using the RDL first process can be obtained.

[0110] The electronic component of the present invention is an electronic component including a semiconductor package having at least a semiconductor element, a rewiring layer, a sealing resin, and an antenna wiring, wherein the insulating layer of the rewiring layer and / or the sealing resin preferably includes the cured product of the present invention, and the sealing resin is preferably located between a ground and the antenna wiring. The cured product of the present invention has a low dielectric constant and dielectric loss tangent, thereby suppressing transmission loss and improving antenna characteristics.

[0111] As an example of such an electronic component, a semiconductor package including an IC chip (semiconductor element), a rewiring layer, a sealing resin, and an antenna wiring will be described with reference to FIG. 1 . FIG. 1 is a schematic cross-sectional view of a semiconductor package including an IC chip (semiconductor element), a rewiring layer, a sealing resin, and an antenna element. A rewiring layer (two copper layers, three insulating layers) made of copper wiring 109 and an insulating film 110 formed using the cured product of the present invention is formed on an electrode pad 102 of an IC chip 101. A barrier metal 111 and a solder bump 112 are formed on the pad of the rewiring layer (copper wiring 109 and insulating film 110). To seal the IC chip, a first sealing resin 108 made of the cured product of the present invention is formed, and a copper wiring 109 serving as a ground for the antenna is further formed thereon. A first via wiring 107 is formed through a via hole formed in the first sealing resin 108, connecting a ground 106 to the rewiring layer (copper wiring 109 and insulating film 110). A second sealing resin 105 made of the cured product of the present invention is formed on the first sealing resin 108 and the ground wiring 106, and a planar antenna wiring 104 is formed thereon. A second via wiring 103 is formed to connect the planar antenna wiring 104 and the rewiring layer (copper wiring 109 and insulating film 110) through a via hole formed in the first sealing resin 108 and the second sealing resin 105. The thickness of each insulating film 110 is preferably 10 to 20 μm, and the thicknesses of the first sealing resin and the second sealing resin are preferably 50 to 200 μm and 100 to 400 μm, respectively.

[0112] The present invention will be described below with reference to examples, but the present invention is not limited to these examples. First, the evaluation methods used in each example and comparative example will be described. For the evaluation, a photosensitive resin composition (hereinafter referred to as "varnish") before curing was used, which had been previously filtered through a polytetrafluoroethylene filter (manufactured by Sumitomo Electric Industries, Ltd.) with an average pore size of 1 μm. A varnish is a liquid obtained by dissolving (A) a polyamide resin and, if necessary, (B) a photosensitizer and (C) a thermal acid generator or crosslinking agent in a solvent.

[0113] (1) Molecular Weight Measurement (A) The weight average molecular weight (Mw) of the polyamide resin component was confirmed using a GPC (gel permeation chromatography) apparatus, Waters 2690-996 (manufactured by Nippon Waters K.K.). Measurements were performed using N-methyl-2-pyrrolidone (hereinafter referred to as NMP) as the developing solvent, and the weight average molecular weight (Mw) and polydispersity (PDI = Mw / Mn) were calculated in terms of polystyrene. (2) Alkali Developability A solution of the photosensitive resin composition dissolved in γ-butyrolactone (hereinafter referred to as GBL) was applied to a 6-inch silicon wafer and prebaked at 120°C for 3 minutes using a hot plate to form a resin film with a film thickness of 10 μm ± 0.5 μm. This was immersed in a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (hereinafter referred to as TMAH) at a temperature of 23±1° C. for 1 minute, and the thickness of the resin film dissolved per minute was determined from the change in thickness of the resin film before and after immersion, and this was taken as the alkaline dissolution rate (ADR). When the resin film completely dissolved in less than 1 minute, the time required for dissolution was measured, and from this and the thickness of the resin film before immersion, the thickness of the film dissolved per minute was determined, and this was taken as the alkaline dissolution rate (nm / min). The evaluation criteria for alkaline developability based on the alkaline dissolution rate are as follows: A: ADR is 10,000 nm / min or more B: ADR is 5,000 nm / min or more and less than 10,000 nm / min C: ADR is 2,000 nm / min or more and less than 5,000 nm / min D: ADR is less than 2,000 nm / min (3) Measurement of Dielectric Constant and Dielectric Loss Tangent of Cured Resin Film (A) A solution obtained by dissolving polyamide resin in GBL was applied to a 6-inch silicon wafer by spin coating using a coater / developer Mark-7 manufactured by Tokyo Electron Limited so that the film thickness after pre-baking at 120°C for 3 minutes would be 11 μm, and the wafer was pre-baked. Thereafter, the wafer was heated to 200°C or 250°C at a rate of 3.5°C / min using an inert oven CLH-21CD-S (manufactured by Koyo Thermo Systems Co., Ltd.) at an oxygen concentration of 20 ppm or less, and then heat-treated at 200°C or 250°C for 1 hour. After the treatment, the silicon wafer was cooled, and when the temperature reached 50° C. or less, the silicon wafer was taken out and immersed in 45% by mass hydrofluoric acid for 5 minutes to peel off the cured resin film from the silicon wafer.The film was cut into strips 3 cm wide and 10 cm long, and the dielectric constant and dielectric loss tangent of the cured resin film were measured at a frequency of 1 GHz using a perturbation cavity resonator method in accordance with ASTM D2520 at a room temperature of 23.0°C and a humidity of 45.0% RH. The dielectric properties were evaluated on a five-level scale (A to E) as shown in Table 1 below.

[0114]

[0115] (4) IR Measurement (A) A solution of polyamide resin dissolved in GBL was applied to a 6-inch silicon wafer and pre-baked at 120°C for 3 minutes using a hot plate to form a resin film with a film thickness of 5 μm±0.5 μm. This was divided into three, and two of them were heated to 200°C or 250°C at a rate of 3.5°C / min using an inert oven CLH-21CD-S (manufactured by Koyo Thermo Systems Co., Ltd.) at an oxygen concentration of 20 ppm or less, and then heat-treated at 200°C or 250°C for 1 hour. The transmission infrared absorption spectra of the resin film before and after curing were measured using an infrared spectrophotometer (FT-720 manufactured by Horiba, Ltd.), and the wavelength of 1,350 to 1,450 cm originating from the structure of the hexafluoroisopropanol group before cyclization was 1,350 to 1,450 cm. －１ Peak intensity at (I ａ ) and the wavelength of 1,050 to 1,150 cm due to the structure after cyclization of the hexafluoroisopropanol group －１ Peak intensity at (I ｂ ) and confirm (I ａ / I ｂ) was determined. (5) Measurement of elongation at break of cured resin film A cured resin film was prepared in the same manner as in "(3) Measurement of dielectric constant and dielectric dissipation factor of cured resin film" above, and this film was cut into strips 1.5 cm wide and 9 cm long. Using a Tensilon RTM-100 (manufactured by Orientec Co., Ltd.), the film was stretched at a room temperature of 23.0°C and a humidity of 45.0% RH at a pulling rate of 50 mm / min (chuck spacing = 2 cm) to measure the elongation at break (%). Measurements were made on 10 strips per specimen, and the average of the top five highest numerical values ​​was calculated from the results. The evaluation criteria are as follows. A higher elongation at break indicates better mechanical properties. A: Elongation at break of 40% or more B: Elongation at break of 20% or more but less than 40% C: Elongation at break of less than 20% (6) Patterning processability (6)-1 Sensitivity A varnish of the photosensitive resin composition was spin-coated onto a silicon wafer using a spin coater, and then pre-baked on a hot plate at 120°C for 3 minutes to produce a pre-baked film with a film thickness of 11 µm. The obtained pre-baked film was exposed to light by contact using a parallel light mask aligner (hereinafter referred to as PLA) (PLA-501F manufactured by Canon Inc.) and an ultra-high pressure mercury lamp as a light source through a grayscale mask for sensitivity measurement (having a 1:1 line & space pattern of 1 to 100 µm). Thereafter, the resist was post-exposure baked at 120° C. for 1 minute, and then puddle developed for 90 seconds using the coating and developing apparatus MARK-7 described above in (3) with a 2.38% by mass aqueous solution of TMAH as the developer, followed by rinsing with water for 30 seconds.

[0116] After development, the film thickness was measured, and in the case of a negative photosensitive resin composition, the minimum exposure amount at which the remaining film ratio of the exposed area (= [film thickness after development] / [film thickness after pre-baking]×100) exceeded 90% was defined as the sensitivity (mJ / cm ２ ) When the photosensitive resin composition is a positive type, the minimum exposure dose and sensitivity at which the film thickness of the exposed area becomes 5 nm or less (below the detection limit) were used. The exposure dose was measured with an i-line illuminometer. If the pattern was not completely removed or if there was residue, it was recorded as "not suitable for lithography."

[0117] (6)-2 Resolution The minimum pattern dimension (μm) after development at the exposure dose at the sensitivity obtained in (6)-1 was measured and used as the resolution. (7) Measurement of the dielectric constant and dielectric dissipation factor of a cured film obtained from a photosensitive resin composition The dielectric constant and dielectric dissipation factor of a cured film obtained from a photosensitive resin composition were measured in the same manner as in "Measurement of the dielectric constant and dielectric dissipation factor of a cured resin film" described above in (3), except that a varnish of a photosensitive resin composition was used as the substrate to be coated instead of "(A) a solution in which a polyamide resin is dissolved in GBL". However, in the case of a negative photosensitive resin composition, after pre-baking, a 1,500 mJ / cm 2 beam was applied to the entire surface of the film using PLA. ２ The dielectric properties were evaluated on a 5-point scale as shown in Table 2 below.

[0118]

[0119] The abbreviations of the compounds used in the Examples and Comparative Examples are as follows: OBBOC: 4,4'-oxybisbenzoic acid chloride SucC: succinyl chloride ADC: adipoyl chloride SubC: suberoyl chloride DDC: dodecandioyl chloride HFA-mTB: 5,5'-bis(1-hydroxy-1-trifluoromethyl-2,2,2-trifluoroethyl)-2,2'-dimethylbenzidine HFA-ODA: 3,3'-bis(1-hydroxy-1-trifluoromethyl-2,2,2-trifluoroethyl)-4,4'-oxydianiline HDA-MDA: 3,3'-bis(1-hydroxy-1-trifluoromethyl-2,2,2-trifluoroethyl)-4,4'-methylenedianiline HFA-BIS-A-EF: 1,1,1-trifluoro-2,2-bis(3-(1-hydroxy-1-trifluoromethyl-2,2,2-trifluoroethyl)-4-aminophenyl)ethane BC: benzoyl chloride MAOC: methacryloyl chloride PA: phthalic anhydride NA: nadic anhydride NQD: naphthoquinone diazide compound shown below in Synthesis Example 17 (corresponding to photosensitizer (b-1)) NCI-831: photoradical polymerization initiator manufactured by ADEKA Corporation (corresponding to photosensitizer (b-2)) CPI-310B: photoacid generator manufactured by San-Apro Ltd. (corresponding to photosensitizer (b-3)) TA-100: aromatic sulfonium salt compound (trade name, manufactured by San-Apro Ltd.) BTS: butyl p-toluenesulfonate (thermal acid generator having a sulfonate ester structure, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) DPHA: dipentaerythritol pentaacrylate TEPIC-VL: isocyanuric acid-modified epoxy compound (manufactured by Nissan Chemical Industries, Ltd.) GBL: γ-butyrolactone [Synthesis Example 1 Synthesis of Polyamide Resin (A-1)] In a dry nitrogen stream, 21.77 g (0.040 mol) of HFA-mTB and 50.00 g of N-methyl-2-pyrrolidone (hereinafter, referred to as NMP) were weighed and dissolved in a three-necked flask.

[0120] While maintaining the temperature at 0 to 5°C, a solution of 9.44 g (0.032 mol) of OBBOC dissolved in 40.00 g of NMP and a solution of 2.25 g (0.016 mol) of BC dissolved in 20 g of NMP were added over 10 minutes, and the mixture was then returned to room temperature and stirred for 3 hours. After completion of the reaction, the reaction solution was poured into 2 L of water, and the resulting solid precipitate was collected by filtration. The resulting solid was washed three times with water and then dried in a vacuum dryer at 50°C for 72 hours to obtain polyamide resin (A-1). [Synthesis Examples 2 to 16: Synthesis of Polyamide Resins (A-2) to (A-16)] Polyamide resins (A-2) to (A-16) were synthesized in the same manner as in Synthesis Example 1, using the molar ratios shown in Table 3 below. Synthesis Example 17: Synthesis of naphthoquinone diazide compound Under a dry nitrogen stream, 21.23 g (0.05 mol) of TrisP-PA (trade name, manufactured by Honshu Chemical Industry Co., Ltd.) and 37.62 g (0.14 mol) of 5-naphthoquinone diazide sulfonyl chloride were dissolved in 450 g of 1,4-dioxane and the solution was allowed to cool to room temperature. To this solution, 15.58 g (0.154 mol) of triethylamine mixed with 50 g of 1,4-dioxane was added dropwise so that the temperature in the system did not exceed 35°C. After the dropwise addition, the mixture was stirred at 30°C for 2 hours. The triethylamine salt was filtered, and the filtrate was poured into water. The precipitate was then collected by filtration. This precipitate was dried in a vacuum dryer to obtain a naphthoquinone diazide compound having the following chemical formula:

[0121]

[0122]

[0123]

[0124] Details of each component in Table 4 are as follows: <Polyamide Resin (A)> (A-1) to (A-16): Resins described in Synthesis Examples 1 to 16, respectively.

[0125] Here, polyamide resins (A) of A-1 to A-13 have a molecular chain terminal of formula (1). <Photosensitizer (B)> NQD NCI-831 CPI-310B <Thermal acid generator (C)> TA-100 BTS <Crosslinking agent (D)> DPHA TEPIC-VL <Solvent> GBL Varnishes of Examples 1 to 18 and Comparative Examples 1 to 6 were prepared under yellow light according to the composition ratios shown in Table 4, and evaluations (2) to (5) were carried out for Examples 1 to 13 and Comparative Examples 1 to 3, and evaluations (6) and (7) were carried out for Examples 14 to 18 and Comparative Examples 4 to 6.

[0126] The measurement results are shown in Tables 5 and 6, respectively.

[0127]

[0128]

[0129] REFERENCE SIGNS LIST 101 IC chip 102 Electrode pad 103 Second via wiring 104 Planar antenna wiring 105 Second sealing resin 106 Ground wiring 107 First via wiring 108 First sealing resin 109 Copper wiring 110 Insulating film 111 Barrier metal 112 Solder bump

[0130] The resin composition of the present invention can be suitably used for surface protection films for semiconductor elements and the like, interlayer insulating films, insulating layers for display devices such as organic light-emitting elements, planarizing films for thin film transistor (hereinafter, TFT) substrates, wiring protection insulating films for circuit boards, and the like.

Claims

1. A polyamide resin (A) having a dicarboxylic acid residue and a diamine residue, the polyamide resin (A) including a molecular chain terminal represented by formula (1). In formula (1), Y １ represents a divalent organic group having 2 to 70 carbon atoms, Z represents a monovalent monocarboxylic acid residue having 1 to 20 carbon atoms, R １ and R ２ each independently represents a monovalent organic group having 1 to 10 carbon atoms. p and q represent integers of 0 to 3. * represents the point of attachment to the amide bond.

2. The polyamide resin (A) according to claim 1, wherein the dicarboxylic acid residue contains an aliphatic chain structure having 1 to 30 carbon atoms.

3. The polyamide resin (A) according to claim 1 or 2, wherein Z in said formula (1) is a residue of a monovalent monocarboxylic acid having 1 to 20 carbon atoms and containing a carbon-carbon unsaturated double bond.

4. A photosensitive resin composition comprising the polyamide resin (A) according to claim 1 or 2, and a photosensitizer (B), wherein the photosensitizer (B) is one or more compounds selected from the group consisting of naphthoquinone diazide compounds (b-1), photoradical polymerization initiators (b-2) and photoacid generators (b-3).

5. The photosensitive resin composition according to claim 4, further comprising (C) a thermal acid generator.

6. The photosensitive resin composition according to claim 5, wherein the thermal acid generator (C) is a thermal acid generator having a sulfonate structure.

7. A cured product obtained by curing the photosensitive resin composition according to claim 4.

8. A cured product containing a resin having a structure represented by formula (2). In formula (2), * indicates a chemical bond.

9. Wavelengths of 1,350 to 1,450 cm originating from the hexafluoroisopropanol group －１ Peak intensity at (I ａ ) for the cyclic structure of the hexafluoroisopropanol group and the amide group, the wavelength of 1,050 to 1,150 cm －１ Peak intensity at (I ｂ ) ratio (I ａ / I ｂ ) is 1 or less.

10. A method for producing a cured product, comprising the steps of: applying the photosensitive resin composition according to claim 4 onto a substrate and drying to form a resin film; exposing the resin film to light; developing the resin film after exposure; and heat-treating the resin film after development.

11. An electronic part comprising the cured product according to claim 7.

12. The electronic component according to claim 11, comprising a semiconductor package having at least a semiconductor element, a redistribution layer, a sealing resin, a ground, and an antenna wiring, wherein an insulating layer of the redistribution layer and / or the sealing resin contains the cured product, and the sealing resin is located between the ground and the antenna wiring.

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