Plating apparatus

Abstract

In this plating apparatus that feeds electric power only to one facing edges of a substrate, uniformity in plating film thickness distribution is improved.　An intermediate mask 30 includes: a pair of first edge members 31 that face electric power feed edge members of a substrate holder; a pair of second edge members 33 that face non-electric-power feed edge members of the substrate holder; first electric field supply members 35 disposed on the first edge members 31; and second electric field supply members 37 disposed on the second edge members 33. The first electric field supply members 35 are configured to extend along the first edge members 31 between first positions PG-1 on the extension of a first edge 30a-1 of a second central opening 30a and second positions PG-2 on the extension of a second edge 30a-2 facing the first edge 30a-1. The second electric field supply members 37 are configured to supply, in between third positions PG-3 on the extension of a third edge 30a-3 of the second central opening 30a and fourth positions PG-4 on the extension of a fourth edge 30a-4 facing the third edge 30a-3, an electric field to the pair apart from the third positions PG-3 and the fourth positions PG-4.

Description

Plating Equipment

[0001] The present application relates to a plating apparatus.

[0002] A known example of an electrolytic plating apparatus is a dip-type plating apparatus, which is configured to deposit a conductive film on a surface to be plated by applying a voltage between the substrate and an anode while immersing the substrate in a plating solution with the surface to be plated facing sideways in a substrate holder.

[0003] Patent Document 1 discloses a dip-type plating apparatus for plating rectangular substrates. This plating apparatus includes an anode mask for adjusting the electric field (current) from the anode to the substrate near the anode, and an intermediate mask for adjusting the electric field from the anode to the substrate near the substrate. Patent Document 1 also discloses that an auxiliary anode is provided on the intermediate mask to uniformize the plating film thickness distribution on the substrate.

[0004] Japanese Patent Application Laid-Open No. 2023-1082

[0005] The plating apparatus disclosed in Patent Document 1 does not take into consideration improving the uniformity of the plating film thickness distribution in a plating apparatus that supplies power only to one opposing side of a substrate.

[0006] In other words, some plating apparatuses use a substrate holder that is configured to supply power to one pair of opposing sides of a rectangular substrate and not to supply power to another pair of opposing sides, primarily for the purpose of simplifying the configuration of the substrate holder. In this case, the electric field is generated differently compared to plating apparatuses that supply power to all four sides of the substrate, and simply providing an auxiliary anode on the intermediate mask is likely to result in variations in the plating film thickness distribution on the substrate.

[0007] Therefore, one object of the present invention is to improve the uniformity of the plating film thickness distribution in a plating apparatus that supplies power only to one opposing side of a substrate.

[0008] According to one embodiment, the plating apparatus includes a plating tank for accommodating a plating solution, an anode disposed in the plating tank, a substrate holder for holding a rectangular substrate such that a surface to be plated faces the anode, the substrate holder having power supply side members that supply power to a pair of opposing sides of the rectangular substrate and non-power supply side members that do not supply power to another pair of opposing sides of the rectangular substrate, an anode mask disposed between the anode and the substrate holder and having a rectangular first central opening that penetrates from the anode side to the substrate holder side, and an intermediate mask disposed between the anode mask and the substrate holder and having a rectangular second central opening that penetrates from the anode side to the substrate holder side, the intermediate mask having a pair of first side members that are disposed opposite the power supply side members of the substrate holder and a pair of second side members that are disposed opposite the non-power supply side members of the substrate holder a pair of second side members arranged adjacent to each other; a first electric field supply member for supplying an electric field arranged on a surface of each of the pair of first side members facing the substrate holder; and a second electric field supply member for supplying an electric field arranged on a surface of each of the pair of second side members facing the substrate holder, wherein the first electric field supply member is configured to extend along the first side members between a first position on an extension of a first side of the rectangular second central opening and a second position on an extension of a second side opposite the first side; and the second electric field supply member is configured to supply an electric field to the pair between a third position on an extension of a third side of the rectangular second central opening and a fourth position on an extension of a fourth side opposite the third side, away from the third position and the fourth position.

[0009] FIG. 1 is a cross-sectional view showing the overall configuration of a plating apparatus according to one embodiment. FIG. 2 is a diagram schematically showing the configuration of a substrate holder according to one embodiment. FIG. 3 is a diagram schematically showing the configuration of an intermediate mask according to one embodiment. FIG. 4 is a diagram showing a cross section taken along line A-A in FIG. 3. FIG. 5 is a diagram showing a cross section taken along line B-B in FIG. 3. FIG. 6 is a diagram schematically showing the configurations of intermediate masks according to comparative examples 1 and 2. FIG. 7 is a diagram showing the plating film thickness distribution obtained using the intermediate mask according to one embodiment and the intermediate mask according to the comparative example. FIG. 8 is a diagram showing the results of a comparison of the uniformity of the plating film thickness distribution obtained using the intermediate mask according to one embodiment and the intermediate mask according to the comparative example. FIG. 9 is a diagram schematically showing the configuration of an intermediate mask according to another embodiment.

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, the same or corresponding components are designated by the same reference numerals, and redundant description will be omitted.

[0011] 1 is a cross-sectional view showing the overall configuration of a plating apparatus according to one embodiment. As shown in the figure, the plating apparatus 10 according to this embodiment includes an anode holder 20 configured to hold an anode 21, a substrate holder 40 configured to hold a rectangular substrate WF, and a plating tank 50 that houses the anode holder 20 and the substrate holder 40 therein.

[0012] As shown in FIG. 1 , the plating tank 50 includes a plating treatment tank 52 that contains a plating solution Q containing an additive, a plating solution discharge tank 54 that receives and discharges the plating solution Q that overflows from the plating treatment tank 52, and a partition wall 55 that separates the plating treatment tank 52 from the plating solution discharge tank 54.

[0013] The anode holder 20 holding the anode 21 and the substrate holder 40 holding the substrate WF are immersed in plating solution Q in the plating tank 52, and are disposed facing each other so that the anode 21 and the plating surface WF1 of the substrate WF are approximately parallel. In other words, the substrate holder 40 holds the substrate WF with the plating surface WF1 facing sideways. A voltage is applied to the anode 21 and the substrate WF while they are immersed in the plating solution Q in the plating tank 52. As a result, metal ions are reduced on the plating surface WF1 of the substrate WF, and a film is formed on the plating surface WF1.

[0014] 2 is a diagram schematically illustrating the configuration of a substrate holder. As shown in Fig. 2, the substrate holder 40 has a power supply side member 42 that supplies power to a pair of opposing sides of a rectangular substrate WF, and a non-power supply side member 44 that does not supply power to the other pair of opposing sides of the rectangular substrate WF. The power supply side member 42 has contacts 43 that come into contact with the substrate WF when the substrate WF is attached to the substrate holder 40, and is configured to supply power to the pair of sides of the substrate WF from a power source (not shown) via the contacts 43. On the other hand, the non-power supply side member 44 is not provided with contacts, and does not supply power to the other pair of sides of the substrate WF.

[0015] In this embodiment, the substrate holder 40 is configured to supply power to a pair of left and right sides of the substrate WF, but not to supply power to a pair of top and bottom sides of the substrate WF. However, without being limited to this, the substrate holder 40 may be configured to supply power to a pair of top and bottom sides of the substrate WF, but not to supply power to a pair of left and right sides of the substrate WF.

[0016] 1 , the plating treatment tank 52 has a plating solution supply port 56 for supplying the plating solution Q into the tank. The plating solution discharge tank 54 has a plating solution discharge port 57 for discharging the plating solution Q that has overflowed from the plating treatment tank 52. The plating solution supply port 56 is located at the bottom of the plating treatment tank 52, and the plating solution discharge port 57 is located at the bottom of the plating solution discharge tank 54.

[0017] When plating solution Q is supplied to plating treatment tank 52 through plating solution supply port 56, plating solution Q overflows plating treatment tank 52, flows over partition wall 55, and flows into plating solution discharge tank 54. Plating solution Q that has flowed into plating solution discharge tank 54 is discharged through plating solution discharge port 57, and impurities are removed by a filter or the like provided in plating solution circulation device 58. The plating solution Q from which impurities have been removed is supplied to plating treatment tank 52 through plating solution supply port 56 by plating solution circulation device 58.

[0018] The plating apparatus 10 includes an anode mask 70 for adjusting the electric field between the anode 21 and the substrate WF. The anode mask 70 is a generally plate-shaped member made of, for example, a dielectric material, and is provided on the front surface of the anode holder 20. Here, the "front surface" of the anode holder 20 refers to the surface facing the substrate holder 40. That is, the anode mask 70 is disposed between the anode 21 and the substrate holder 40. The anode mask 70 has a first central opening 70a in its approximate center, which penetrates between the anode 21 side and the substrate holder 40 side, in other words, through which a current flows between the anode 21 and the substrate WF. The diameter of the first central opening 70a is preferably smaller than the diameter of the anode 21. The anode mask 70 is configured so that the diameter of the first central opening 70a can be adjusted.

[0019] The plating apparatus 10 also includes an intermediate mask 30, which is an example of an electric field adjusting member for adjusting the electric field between the anode 21 and the substrate WF. The intermediate mask 30 is a substantially plate-shaped member made of, for example, a dielectric material, and is disposed between the anode mask 70 and the substrate holder 40 (substrate WF). The intermediate mask 30 has a second central opening 30a that penetrates between the anode 21 side and the substrate holder 40 side, in other words, through which a current flows between the anode 21 and the substrate WF. The diameter of the second central opening 30a is preferably smaller than the diameter of the substrate WF. The intermediate mask 30 is configured so that the diameter of the second central opening 30a can be adjusted.

[0020] A paddle 18 for stirring the plating solution Q near the plating surface WF1 of the substrate WF is provided between the intermediate mask 30 and the substrate holder 40. One end of the paddle 18 is fixed to a paddle drive device 19. The paddle 18 is moved along the plating surface WF1 of the substrate WF by the paddle drive device 19, thereby stirring the plating solution Q.

[0021] The plating apparatus 10 further includes a membrane box 60. The membrane box 60 is a box-shaped member for accommodating the anode holder 20 (anode 21) and the anode mask 70 in the plating tank 50. The membrane box 60 includes a membrane 62 disposed between the anode mask 70 and the intermediate mask 30. The membrane 62 is a membrane that separates an anode region where the anode 21 is disposed from a cathode region where the substrate WF is disposed. The membrane box 60 includes a plug 64 for discharging the plating solution Q from the membrane box 60 when the membrane box 60 is lifted from the plating tank 50.

[0022] In a plating apparatus equipped with an intermediate mask 30 as in this embodiment, it is known to provide an auxiliary anode on the intermediate mask 30. However, when power is supplied only to one opposing edge of the substrate as in the above-described substrate holder 40, the state of electric field formation differs compared to when power is supplied to all four edges of the substrate, and therefore it is necessary to provide an auxiliary anode according to the state of electric field formation. This point will be explained below.

[0023] Fig. 3 is a diagram schematically showing the configuration of an intermediate mask according to one embodiment, Fig. 4 is a diagram showing a cross section taken along line A-A in Fig. 3, and Fig. 5 is a diagram showing a cross section taken along line B-B in Fig. 3.

[0024] As shown in Figures 3 to 5, the intermediate mask 30 of this embodiment includes a pair of first side members 31 arranged opposite the power supply side members 42 of the substrate holder 40, and a pair of second side members 33 arranged opposite the non-power supply side members 44 of the substrate holder 40.

[0025] The intermediate mask 30 also includes a first electric field supply member 35 for supplying an electric field, which is arranged on the surface of the first edge member 31 facing the substrate holder, and a second electric field supply member 37 for supplying an electric field, which is arranged on the surface of the second edge member 33 facing the substrate holder.

[0026] The first electric field supply member 35 is configured to extend along the first side member 31 between a first position PG-1 on an extension of a first side 30a-1 of the rectangular second central opening 30a and a second position PG-2 on an extension of a second side 30a-2 opposite to the first side 30a-1.

[0027] More specifically, the first electric field supply member 35 includes a first groove 32-1 extending from a first position PG-1 to a second position PG-2 and a first auxiliary anode 34-1 disposed inside the first groove 32-1. The first electric field supply member 35 also includes a first shielding member 36-1 disposed in the first groove 32-1 so as to shield the first auxiliary anode 34-1, and a first opening 36-1a formed in the first shielding member 36-1 from the first position PG-1 to the second position PG-2. This exposes the first auxiliary anode 34-1 from the first opening 36-1a, and an electric field is supplied to the substrate WF via the first opening 36-1a.

[0028] The first electric field supply member 35 also includes a first membrane 38-1 disposed in the first opening 36-1a. The first membrane 38-1 is a diaphragm such as an ion exchange membrane. By providing the first membrane 38-1, it is possible to prevent decomposition products and the like generated by the first auxiliary anode 34-1 from adhering to the plating surface WF1 of the substrate WF.

[0029] On the other hand, the second electric field supplying member 37 is configured to supply an electric field to a pair of positions away from the third position PG-3 and the fourth position PG-4 between a third position PG-3 on an extension of the third side 30a-3 of the rectangular second central opening 30a and a fourth position PG-4 on an extension of the fourth side 30a-4 opposite to the third side 30a-3.

[0030] More specifically, the second electric field supplying member 37 includes a second groove 32-2 extending from a third position PG-3 to a fourth position PG-4 and a second auxiliary anode 34-2 disposed within the second groove 32-2. The second electric field supplying member 37 also includes a second shielding member 36-2 disposed in the second groove 32-2 so as to shield the second auxiliary anode 34-2. The second electric field supplying member 37 also includes a second opening 36-2a formed in the second shielding member 36-2 away from the third position PG-3 and a third opening 36-2b formed in the second shielding member 36-2 away from the fourth position PG-4 and the second opening 36-2a. As a result, the second auxiliary anode 34-2 is exposed through the second opening 36-2a and the third opening 36-2b, and an electric field is supplied to the substrate WF through the second opening 36-2a and the third opening 36-2b. Note that the second opening 36-2a and the third opening 36-2b are not integrated, and the second shielding member 36-2 exists between the second opening 36-2a and the third opening 36-2b.

[0031] The second electric field supply member 37 also includes a second membrane 38-2 and a third membrane 38-3 disposed in the second opening 36-2a and the third opening 36-2b, respectively. The second membrane 38-2 and the third membrane 38-3 are diaphragms such as ion exchange membranes. In this embodiment, the second auxiliary anode 34-2 disposed inside the second groove 32-2 is covered with the second shielding member 36-2, and the second opening 36-2a and the third opening 36-2b are formed in the second shielding member 36-2 to define the region where the auxiliary anode effect occurs. However, this is not limiting. For example, an auxiliary anode of a size corresponding to the second opening 36-2a and the third opening 36-2b may be disposed in the location where the second opening 36-2a and the third opening 36-2b are formed. This allows the second electric field supplying member 37 to supply an electric field to a pair of positions apart from the third position PG-3 and the fourth position PG-4.

[0032] 6A and 6B are diagrams schematically showing the configurations of intermediate masks of Comparative Examples 1 and 2. In the intermediate mask of Comparative Example 1 shown in Fig. 6A, the first side member 31 is provided with a first electric field supply member 35, as in this embodiment. On the other hand, in the second side member 33, no opening is formed in the second shielding member 36-2, and no auxiliary anode is provided.

[0033] 6(b), the intermediate mask of Comparative Example 2 has a first electric field supply member 35 provided on the first side member 31, as in the present embodiment. On the other hand, in the second side member 33, a pair of openings 36-2a and 36-2b are formed in the second shielding member 36-2, and these openings are in contact with the third position PG-3 and the fourth position PG-4, respectively.

[0034] 7 is a diagram showing the plating film thickness distribution using the intermediate mask of one embodiment and the intermediate mask of the comparative example. Fig. 7 shows the plating film thickness profile from the center (A) to the edge (B) of the substrate WF. In the graph of Fig. 7, the vertical axis represents the normalized plating film thickness, and the horizontal axis represents the measurement position of the plating film thickness from the center (A) to the edge (B) of the substrate WF.

[0035] As shown in FIG. 7 , in Comparative Example 1, because there is no auxiliary anode on the second side member 33, the plating film thickness is thin in the area inward from the edge of the substrate WF (the area surrounded by the dashed line α). In Comparative Example 2, the openings 36-2a and 36-2b formed in the second shielding member 36-2 are in contact with the third position PG-3 and the fourth position PG-4, so the electric field concentrates at the corners of the substrate WF, resulting in an excessively thick plating film thickness in the area inward from the edge of the substrate WF (the area surrounded by the dashed line β). In contrast, in this embodiment, the second opening 36-2a and the third opening 36-2b are formed away from the third position PG-3 and the fourth position PG-4. As a result, the electric field is prevented from concentrating at the corners of the substrate WF, and the electric field can be supplied to the area inward from the edge of the substrate WF, thereby improving the uniformity of the plating film thickness distribution.

[0036] 8 is a graph showing the results of comparing the uniformity of the plating film thickness distribution using the intermediate mask of the embodiment and the intermediate mask of the comparative example. In the graph of FIG. 8, the vertical axis represents the variation in the normalized plating film thickness distribution. As shown in FIG. 8, when the intermediate mask 30 of this embodiment is used, the variation in the plating film thickness distribution can be reduced compared to the comparative examples 1 and 2.

[0037] 3 is merely an example. The second opening 36-2a and the third opening 36-2b can be formed in various ways as described below.

[0038] 9A, 9B, and 9C are diagrams schematically illustrating the configuration of an intermediate mask according to another embodiment. As shown in FIGS. 9A, 9B, and 9C, the second electric field supply member 37 has four regions (first region (1) to fourth region (4)) obtained by dividing the area from the third position PG-3 to the fourth position PG-4 into four equal parts. The second opening 36-2a may be formed in the second shielding member 36-2 in the first region (1) away from the third position PG-3. The third opening 36-2b may be formed in the second shielding member 36-2 in the fourth region (4) away from the fourth position PG-4.

[0039] 3 shows an example in which the second opening 36-2a and the third opening 36-2b are formed on the distal side 36-2c of the second shielding member 36-2, which is away from the second central opening 30a, but this is merely an example. As shown in FIG. 9(a), the second opening 36-2a and the third opening 36-2b may be formed on the proximal side 36-2d of the second shielding member 36-2, which is closer to the second central opening 30a.

[0040] 9(b), the second opening 36-2a may be formed across the first region (1) and the second region (2) as long as it is spaced apart from the third position PG-3 in at least the first region (1). The third opening 36-2b may be formed across the third region (3) and the fourth region (4) as long as it is spaced apart from the fourth position PG-4 in at least the fourth region (4). Furthermore, the second opening 36-2a and the third opening 36-2b may be formed between the distal edge 36-2c and the proximal edge 36-2d of the second shielding member 36-2.

[0041] Furthermore, as shown in FIG. 9(c), the second opening 36-2a and the third opening 36-2b may be formed so that the size (AA) in the direction along the second side member 33 is smaller than the size (BB) in the direction along the second side member 33 of the second shielding member 36-2 between the second opening 36-2a and the third opening 36-2b (so that AA < BB).

[0042] That is, if the size of the second opening 36-2a and the third opening 36-2b in the direction along the second side member 33 is too large, an excessive electric field may be supplied to the central portion of the substrate WF, which may impair the uniformity of the plating film thickness distribution. In contrast, by arranging the second shielding member 36-2 with an appropriate size between the second opening 36-2a and the third opening 36-2b, it is possible to prevent an excessive electric field from being supplied to the central portion of the substrate WF, thereby improving the uniformity of the plating film thickness distribution.

[0043] Although several embodiments of the present invention have been described above, the above-described embodiments of the present invention are intended to facilitate understanding of the present invention and are not intended to limit the present invention. The present invention may be modified or improved without departing from the spirit thereof, and the present invention naturally includes equivalents thereof. Furthermore, any combination or omission of the components described in the claims and specification is possible within the scope of solving at least part of the above-described problems or achieving at least part of the effects.

[0044] In one embodiment, the present application provides a substrate holder including a plating tank for containing a plating solution, an anode disposed in the plating tank, and a substrate holder for holding a rectangular substrate such that the surface to be plated faces the anode, the substrate holder having power supply side members that supply power to a pair of opposing sides of the rectangular substrate and non-power supply side members that do not supply power to another pair of opposing sides of the rectangular substrate; an anode mask disposed between the anode and the substrate holder and having a rectangular first central opening that penetrates from the anode side to the substrate holder side; and an intermediate mask disposed between the anode mask and the substrate holder and having a rectangular second central opening that penetrates from the anode side to the substrate holder side, the intermediate mask having a pair of first side members that are disposed opposite the power supply side members of the substrate holder and a pair of non-power supply side members of the substrate holder. Disclosed is a plating apparatus including a pair of second side members arranged opposite each other, a first electric field supply member for supplying an electric field arranged on a surface of each of the pair of first side members facing the substrate holder, and a second electric field supply member for supplying an electric field arranged on a surface of each of the pair of second side members facing the substrate holder, wherein the first electric field supply member is configured to extend along the first side members between a first position on an extension of a first side of the rectangular second central opening and a second position on an extension of a second side opposite the first side, and the second electric field supply member is configured to supply an electric field to the pair between a third position on an extension of a third side of the rectangular second central opening and a fourth position on an extension of a fourth side opposite the third side, away from the third position and the fourth position.

[0045] Furthermore, the present application discloses, as one embodiment, a plating apparatus, wherein the first electric field supply member includes a first groove extending from the first position to the second position, a first auxiliary anode disposed within the first groove, a first shielding member disposed in the first groove to shield the first auxiliary anode, and a first opening formed in the first shielding member from the first position to the second position; and the second electric field supply member includes a second groove extending from the third position to the fourth position, a second auxiliary anode disposed within the second groove, a second shielding member disposed in the second groove to shield the second auxiliary anode, a second opening formed in the second shielding member away from the third position, and a third opening formed in the second shielding member away from the fourth position and the second opening.

[0046] Furthermore, the present application discloses, as one embodiment, a plating apparatus in which the first electric field supplying member further includes a first membrane disposed in the first opening, and the second electric field supplying member further includes a second membrane and a third membrane disposed in the second opening and the third opening, respectively.

[0047] Furthermore, the present application discloses, as one embodiment, a plating apparatus in which the second electric field supply member has first to fourth regions that divide the area from the third position to the fourth position into four equal parts, the second opening is formed in the second shielding member in the first region away from the third position, and the third opening is formed in the second shielding member in the fourth region away from the fourth position.

[0048] Furthermore, as one embodiment, the present application discloses a plating apparatus in which the second opening and the third opening are formed so that the size in the direction along the second side member is smaller than the size in the direction along the second side member of the second shielding member between the second opening and the third opening.

[0049] 10 Plating apparatus 21 Anode 30 Intermediate mask 30a Second central opening 30a-1 First side 30a-2 Second side 30a-3 Third side 30a-4 Fourth side 31 First side member 32-1 First groove 32-2 Second groove 33 Second side member 34-1 First auxiliary anode 34-2 Second auxiliary anode 35 First electric field supply member 36-1 First shielding member 36-1a First opening 36-2 Second shielding member 36-2a Second opening 36-2b Third opening 37 Second electric field supply member 38-1 First membrane 38-2 Second membrane 38-3 Third membrane 40 Substrate holder 42 Power supply side member 44 Non-powered edge member 50 Plating tank 70 Anode mask 70a First central opening PG-1 First position PG-2 Second position PG-3 Third position PG-4 Fourth position Q Plating solution WF Substrate WF1 Surface to be plated

Claims

1. A plating apparatus comprising: a plating tank for containing a plating solution; an anode disposed in the plating tank; a substrate holder for holding a rectangular substrate such that a surface to be plated faces the anode, the substrate holder having a power supply side member for supplying power to a pair of opposing sides of the rectangular substrate and a non-power supply side member for not supplying power to the other pair of opposing sides of the rectangular substrate; an anode mask disposed between the anode and the substrate holder and having a rectangular first central opening penetrating the anode side and the substrate holder side; an intermediate mask disposed between the anode mask and the substrate holder and having a rectangular second central opening penetrating the anode side and the substrate holder side, wherein the intermediate mask includes a pair of first side members disposed to face the power supply side member of the substrate holder, a pair of second side members disposed to face the non-power supply side member of the substrate holder, a first electric field supply member for supplying an electric field disposed on a surface of each of the pair of first side members on the substrate holder side, and a second electric field supply member for supplying an electric field disposed on a surface of each of the pair of second side members on the substrate holder side, the first electric field supply member being configured to extend along the first side member between a first position on an extension of a first side of the rectangular second central opening and a second position on an extension of a second side opposing the first side, the second electric field supply member being configured to supply an electric field in a pair away from the third position and the fourth position between a third position on an extension of a third side of the rectangular second central opening and a fourth position on an extension of a fourth side opposing the third side.

2. The first electric field supply member includes a first groove extending from the first position to the second position, a first auxiliary anode disposed inside the first groove, a first shielding member disposed in the first groove so as to shield the first auxiliary anode, and a first opening formed in the first shielding member from the first position to the second position. The second electric field supply member includes a second groove extending from the third position to the fourth position, a second auxiliary anode disposed inside the second groove, a second shielding member disposed in the second groove so as to shield the second auxiliary anode, a second opening formed in the second shielding member away from the third position, and a third opening formed in the second shielding member away from the fourth position and the second opening. The plating apparatus according to claim 1.

3. The first electric field supply member further includes a first membrane disposed in the first opening. The second electric field supply member further includes a second membrane and a third membrane disposed in the second opening and the third opening, respectively. The plating apparatus according to claim 2.

4. The second electric field supply member has a first region to a fourth region obtained by equally dividing the distance from the third position to the fourth position into four parts. The second opening is formed in the second shielding member away from the third position in the first region. The third opening is formed in the second shielding member away from the fourth position in the fourth region. The plating apparatus according to claim 2 or 3.

5. The second opening and the third opening are formed such that the size in the direction along the second side member is smaller than the size in the direction along the second side member of the second shielding member between the second opening and the third opening. The plating apparatus according to claim 4.

Images