Substrate processing method, article manufacturing method, substrate processing apparatus, and system

Abstract

A solution (F0), disposed on a substrate (S) and containing a liquid of a first solvent (L1), is exposed to a supply gas containing a gas (G2) of a second solvent (L2) having a lower saturated vapor pressure at 25°C than the first solvent (L1), to adjust the liquid physical properties of the solution (F0).

Description

Substrate processing method, article manufacturing method, substrate processing apparatus and system

[0001] The present disclosure relates to a substrate processing method, an article manufacturing method, a substrate processing apparatus, and a system.

[0002] When manufacturing articles such as panels (organic EL panels) having OLEDs (organic light-emitting diodes), which are organic EL (electroluminescence) elements, a method of applying a solution (ink) to desired locations on a substrate using an application device is known. By applying the solution to the substrate, a solution film is formed on the substrate. A solution film made of a solution is a film containing a solute and a solvent. A drying process is performed to dry the solution film applied to the substrate, and a film (layer) such as a functional film is formed on the substrate. A drying device is used to dry the solution film.

[0003] On the other hand, Patent Document 1 discloses that a solution film containing cyclohexanone as a solvent is applied to a substrate. Patent Document 1 also discloses that in order to prevent the solution film from drying, i.e., to prevent the solvent contained in the solution film from volatilizing, the atmosphere near the solution film is filled with PEGMIA (propylene glycol methyl ether acetate) vapor as solvent vapor. The saturated vapor pressure of PEGMIA is 500 Pa, and the saturated vapor pressure of cyclohexanone is 450 Pa. In other words, Patent Document 1 discloses that the atmosphere near the solution film is filled with vapor of a solvent having a higher saturated vapor pressure than the solvent contained in the solution film.

[0004] Furthermore, Patent Document 2 discloses that the atmosphere in the vicinity of the solution film is filled with vapor of the same solvent as the main solvent contained in the solution film.

[0005] JP 2006-26463 A JP 2006-95427 A

[0006] There is a growing demand for miniaturization of films formed on substrates, and in order to miniaturize the films, high uniformity in the thickness of the films is also required.

[0007] A first aspect of the present disclosure is a substrate processing method comprising a step of exposing a solution containing a liquid of a first solvent placed on a substrate to a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25°C than the first solvent, thereby adjusting the liquid properties of the solution.

[0008] A second aspect of the present disclosure is a substrate processing apparatus comprising: a container for transporting a substrate having a solution containing a liquid of a first solvent placed therein; and a gas supply unit for supplying a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25°C than the first solvent into the container.

[0009] The present disclosure provides an advantageous technique for forming a film. Other features and advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying drawings, in which like reference numerals are used to designate like or similar components.

[0010] 10 is an explanatory diagram of a comparative example. FIG. 10 is a schematic diagram showing the configuration of a manufacturing system that is an example of a system according to the first embodiment. FIG. 10 is a schematic plan view of a substrate processed in the manufacturing system according to the first embodiment. FIG. 10 is a schematic cross-sectional view of a subpixel according to the first embodiment. FIG. 10 is an explanatory diagram of a substrate processing apparatus according to the first embodiment. FIG. 10 is a flowchart of a method for manufacturing an article including the substrate processing method according to the first embodiment. FIG. 10 is an explanatory diagram of a method for manufacturing an article including the substrate processing method according to the first embodiment. FIG. 10 is an explanatory diagram of a supply unit according to the first embodiment. FIG. 10 is a table showing physical property values ​​of a solvent, etc. FIG. 10 is a schematic plan view of a substrate processed in a manufacturing system according to a second embodiment. FIG. 10 is an explanatory diagram of a first recess in a first region in the second embodiment. FIG. 10 is an explanatory diagram of a second recess in a second region in the second embodiment. FIG. 10 is an explanatory diagram of a partial configuration of a substrate processing apparatus according to a second embodiment. FIG. 10 is an explanatory diagram of a partial configuration of a substrate processing apparatus according to a second modified example of the second embodiment. FIG. 10 is an explanatory diagram of a supply unit of a substrate processing apparatus according to a third embodiment. FIG. 10 is a schematic diagram of a substrate processed in a manufacturing system according to a fourth embodiment. FIG. 10 is a schematic diagram of a substrate processed in a manufacturing system according to the fourth embodiment. FIG. 10 is an explanatory diagram of a partial configuration of a substrate processing apparatus according to the fourth embodiment. FIG. 10 is an explanatory diagram of an operation of the substrate processing apparatus according to the fourth embodiment.

[0011] As the resolution of display pixels in smartphones, tablet devices, and the like continues to increase, organic functional films in the organic EL elements contained in the pixels are required to have high uniformity in thickness. However, as pixels become finer, functional films formed on substrates through a drying process for drying a solution film can sometimes exhibit a phenomenon known as the coffee ring phenomenon, in which a thick ring of solute remains on the outer periphery. As a result of extensive research, the present inventors have found a correlation between the coffee ring phenomenon and the liquid properties of the solution film.

[0012] 1 is an explanatory diagram of the phenomenon in which thickness unevenness occurs in a dried film F1X obtained by drying a solution film F0 according to a comparative example. The solution film F0 is composed of a solution, i.e., ink IK. The ink IK is applied to a recess R on a substrate S using, for example, an inkjet head. The solution film F0 is dried to form a dried film F1X. Then, if necessary, a treatment such as a baking treatment is performed on the substrate to form a functional film.

[0013] The inventors have considered that there are two factors that cause the coffee ring to occur in the dried film F1X in the recess R. The first factor is a phenomenon in which Marangoni convection occurs inside the solution film F0, and the second factor is a phenomenon in which the ink IK wets and rises up the side wall surface of the bank that defines the recess R.

[0014] The following explains the results of an investigation into the causes of coffee rings caused by Marangoni convection. As shown in Figure 1, when ink IK (droplets) are applied to recesses R, the ink IK rises up compared to the surrounding area. As the solvent evaporates during the drying process, the concentration of solutes increases near the outer surface of the solution film F0. Marangoni convection, a flow that draws the ink IK from the center of the solution film F0 toward its periphery, occurs in the solution film F0. When Marangoni convection acts strongly, a coffee ring occurs in which solutes remain thickly in a ring shape on the periphery of the recesses R in the dried film F1X formed by the drying of the ink IK.

[0015] The following describes the results of an investigation into the cause of the coffee ring caused by the phenomenon of ink IK wetting up the sidewall surface of the bank. As shown in FIG. 1 , when ink IK (droplets) is applied to the recess R, the ink IK rises up compared to the surrounding area. When the solvent evaporates during the drying process, the ink IK wets up the sidewall surface of the bank due to surface tension. This phenomenon is related to the wettability (receding contact angle) of the ink IK with respect to the sidewall surface of the bank. In this way, when the ink IK dries while wetting up the sidewall surface of the bank, a coffee ring occurs in the dried film F1X.

[0016] The inventors have found that the occurrence of coffee ring in a dried film, i.e., a functional film, is correlated with the liquid properties of the solution film being dried. They have then concluded that the occurrence of coffee ring can be reduced by adjusting the liquid properties of the solution film being dried. The liquid properties of the solution film include, for example, viscosity or surface tension.

[0017] However, when applying the ink IK to the recessed portion R of the substrate S by the inkjet method, it is necessary to stably eject a minute amount of ink IK, on ​​the order of 1pL, from the nozzle of the inkjet head. Therefore, there are restrictions on adjusting the liquid properties of the ink IK ejected from the nozzle, and the liquid properties cannot be freely adjusted. Therefore, the inventors have devised a method of adjusting the liquid properties of the solution film F0 on the substrate S after the solution film F0 is applied to the substrate S. Specifically, they have devised a method of adjusting the liquid properties of the solution film F0, which can mitigate the phenomenon of Marangoni convection occurring and the phenomenon of the ink IK wetting up the sidewall surface of the bank.

[0018] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same components, and redundant explanations will be omitted.

[0019] 2A is a schematic diagram showing the configuration of a manufacturing system 1000, which is an example of a system according to a first embodiment. FIG. 2B is a schematic plan view of a substrate S to be processed in the manufacturing system 1000.

[0020] In the following description, to clarify the positional relationships, an orthogonal coordinate system is defined in which the X-axis, Y-axis, and Z-axis directions are perpendicular to one another. The positive direction of the Z-axis is defined as the vertically upward direction. In other words, the negative direction of the Z-axis is defined as the direction of gravity. The manufacturing system 1000 is a system that manufactures articles used in display devices. The article is, for example, a substrate S on which an organic film is formed. The manufacturing system 1000 is configured to include, for example, a film forming device that forms an organic film on the substrate S.

[0021] The substrate S is a large substrate, for example, an 8.5 generation (2.5 m×2.2 m) glass substrate. By dividing the substrate S into, for example, six equal parts, six 55-inch panels are manufactured.

[0022] Fig. 2C is a schematic cross-sectional view of a subpixel according to the first embodiment. One pixel in a panel is composed of three subpixels, RGB. Fig. 2C illustrates one of the three subpixels. Fig. 2C also illustrates a schematic view of one organic film F2 among multiple organic films included in one subpixel. Each organic film is a functional film.

[0023] In each subpixel, an organic film F2 is formed in a recess R defined by the bank. The organic film F2 may be, for example, any one of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer of an organic EL element (OLED). In the process of manufacturing an organic EL element, organic films such as a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are formed. The step of forming each organic film may include a step of applying a solution containing a functional material as a solute onto a substrate S to form a solution film made of the solution on the substrate S.

[0024] The process of forming the organic film F2 on the substrate S may include a coating process of disposing or coating a solution film on the substrate S, for example, by an inkjet method, a liquid property adjustment process of adjusting the liquid properties of the coated solution film, a drying process of drying the adjusted solution film to form a dry film, and a baking process of baking the dry film.

[0025] The solution film is composed of a solution containing a solute for forming the organic film F2 and at least one solvent (liquid). Hereinafter, the solution will also be referred to as ink. The solvent may have a property that evaporation is promoted in a reduced pressure environment lower than atmospheric pressure (1 atmosphere). Evaporation of the solvent may be promoted, for example, at a temperature higher than room temperature (25°C).

[0026] The manufacturing system 1000 shown in FIG. 2A includes a plurality of processing devices that perform some kind of processing on a substrate S, and a transfer robot 9, which is an example of a transfer device configured to be able to transfer substrates between the plurality of processing devices. Each processing device may include a container (processing chamber). The manufacturing system 1000 includes a container (transfer chamber) 11 connected to each processing chamber of the plurality of processing devices, and the transfer robot 9 may be disposed within the transfer chamber 11. The transfer chamber 11 may be disposed so as to be surrounded by the processing chambers of the plurality of processing devices. The manufacturing system 1000 may be a multi-chamber type article manufacturing system.

[0027] In one example, the multiple processing devices include a coating device 1 that coats a solution film on the substrate S by supplying ink to the substrate S using an inkjet method, a substrate processing device 10 that adjusts the liquid properties of the solution film coated on the substrate S by the coating device 1, and a drying device 4 that dries the solution film whose liquid properties have been adjusted. The multiple processing devices may also include a load lock device 2, an unload lock device 3, a processing device 5, a processing device 6, a processing device 7, and a processing device 8.

[0028] The load lock device 2 is used as an interface for transporting a substrate S from outside the manufacturing system 1000 to inside the manufacturing system 1000. The unload lock device 3 is configured as an interface for transporting a substrate S from the manufacturing system 1000 to outside after processing in the manufacturing system 1000. The load lock device 2 and the unload lock device 3 may be configured as a single device shared for loading and unloading.

[0029] The drying device 4 is configured to form a dry film by performing a drying process that dries the solution film disposed on the substrate S. In the first embodiment, the drying device 4 is a reduced-pressure drying device having a decompression mechanism, and dries the solution film on the substrate S by reducing the pressure in the processing chamber to which the substrate S is transferred below atmospheric pressure. The processing devices 5 to 8 may include processing chambers that perform various processes such as cooling and alignment according to the device characteristics. Note that the number of processing devices is not limited to the example shown in the figure, and may be increased or decreased.

[0030] The transfer robot 9 is configured to hold the substrate S, and to be able to transfer the substrate S from the coating apparatus 1 to any one of the processing chambers via the substrate processing apparatus 10, and to transfer the substrate S from the processing chamber.

[0031] The transfer robot 9 includes a robot arm 91 ( FIG. 3 ) capable of holding the substrate S. The robot arm 91 includes, for example, a link that can move forward and backward in a linear direction. The robot arm 91 supports the substrate S via the link and holds the substrate S. The transfer robot 9 is configured to transport the substrate S from the coating apparatus 1 via the substrate processing apparatus 10 along a linear path to the transfer chamber 11, and then, after changing the orientation of the substrate S toward one of the processing chambers by, for example, a rotational operation in the transfer chamber 11, transport the substrate S linearly into that processing chamber. When the substrate processing apparatus 10 processes the substrate S, the transfer robot 9 temporarily stops transporting the substrate S in the substrate processing apparatus 10. In this state, the substrate processing apparatus 10 processes the substrate S. After processing is completed, the transfer robot 9 transports the substrate S to the next process, i.e., the drying apparatus 4.

[0032] In the first embodiment, a substrate processing apparatus 10 is provided between the coating apparatus 1 and a transfer chamber 11. The substrate processing apparatus 10 is an apparatus that performs processing to adjust the liquid properties of a solution film disposed on a substrate S. The substrate processing apparatus 10 includes a container (processing chamber) 101. In the first embodiment, the transfer robot 9 is configured to transport the substrate S, on which ink has been applied in the coating apparatus 1, in a straight line to the transfer chamber 11 via the container (processing chamber) 101 of the substrate processing apparatus 10.

[0033] The manufacturing system 1000 further includes a control device 20. The control device 20 is an example of a control unit and may be configured with hardware such as a field programmable gate array (FPGA). The control device 20 may also be configured with a programmable logic device (PLD) or an application specific integrated circuit (ASIC). Alternatively, the control device 20 may be configured with a general-purpose or dedicated computer in which a program (software) is embedded, or may be configured by combining all or part of the above-described configuration with a computer.

[0034] The control device 20 may include a CPU, an I / O port, and a computer-readable recording medium. The computer-readable recording medium may be a non-transitory recording medium that stores processing programs executed by the CPU, parameters required for executing the processing, and the like. Examples of non-transitory recording media that may be used include flexible disks, optical disks, magneto-optical disks, magnetic tapes, USB memories, and SSDs. The control device 20 may also include a rewritable storage medium (such as RAM) that provides a storage area required for processing, such as calculations.

[0035] The control device 20 controls the operation of each part of the manufacturing system 1000, including the transfer robot 9 and the substrate processing apparatus 10. A computer-readable non-transitory recording medium provided in the control device 20 stores programs for the manufacturing system 1000 to execute the manufacturing of substrates for organic EL display devices, including the transfer operation according to this embodiment.

[0036] FIG. 3 is an explanatory diagram of a substrate processing apparatus 10 according to a first embodiment. FIG. 3 schematically illustrates a cross section of the substrate processing apparatus 10. The substrate processing apparatus 10 includes a container (chamber) 101 that defines a processing space, and a supply unit 110 that supplies solvent vapor G2, which is a gas of solvent L2, to the processing space, which is the internal space of the container 101. The supply unit 110 is an example of a gas supply section. The container 101 may be an airtight container that can communicate with other containers (chambers). The container 101 is configured to prevent the solvent vapor G2 supplied by the supply unit 110 from scattering outside the container 101.

[0037] A solution film F0 is disposed on a substrate S. In the first embodiment, the solution film F0 is disposed in a recess R of the substrate S. The substrate S on which the solution film F0 is disposed can be transported into the container 101 by a transport robot 9. Inside the container 101, the solution film F0 disposed on the substrate S is exposed to a supply gas G20 containing solvent vapor G2 supplied into the container 101, thereby adjusting the liquid properties of the solution film F0.

[0038] The supply unit 110 may be mounted on the coating device 1 or the drying device 4, on any of the processing devices 5 to 8, or on the transport chamber 11.

[0039] A substrate S, on which a solution film F0 has been coated by a coating device 1, is transported into the container 101 by a transport robot 9. The solution film F0 coated on the substrate S is treated with solvent vapor G2 supplied into the container 101 by a supply unit 110.

[0040] The solution film F0 can be formed by applying ink IK to the substrate S. The ink IK is a solution containing a solvent L1 and a solute for forming the organic film F2. In the solution film F0, the solvent L1 exists as a liquid. The solution film F0 is composed of ink IK. That is, the solution film F0 contains the solvent L1 and the solute. Here, the solvent L1 is an example of a first solvent, and the solvent L2 is an example of a second solvent.

[0041] 4 is a flowchart of a method for manufacturing an article including the substrate processing method according to the first embodiment. FIG. 5 is an explanatory diagram of a method for manufacturing an article including the substrate processing method according to the first embodiment. When the substrate S is loaded into the manufacturing system 1000, an instruction to start substrate processing of the substrate S is given to the control device 20.

[0042] In step (pretreatment step) S1, the control device 20 causes the transfer robot 9 to transfer the substrate S to one of the treatment devices 5 to 8 that performs the substrate pretreatment step. Organic EL elements are sensitive to organic substances and moisture. For this reason, in this treatment device, the substrate S is subjected to a pretreatment, mainly a dry cleaning, such as a dehumidification bake or UV light cleaning. This removes organic substances and moisture from the surface of the substrate S, and adjusts the wettability of the substrate S with respect to the ink IK that is applied to the surface.

[0043] In step (coating step) S2, the control device 20 causes the transport robot 9 to transport the substrate S to the coating device 1. Then, the coating device 1 applies the ink IK onto the substrate S, thereby disposing a solution film F0 on the substrate S. By applying the ink IK onto the substrate S in the coating device 1, a solution film F0 is formed on the substrate S.

[0044] The solution film F0 may be formed over the entire main surface of the substrate S, but in the first embodiment, it is formed in minute recesses R on the main surface of the substrate S. That is, by supplying the ink IK to the recesses R, the solution film F0 is formed in the recesses R. As described above, the recesses R are areas surrounded by banks. The method by which the coating device 1 supplies the ink IK to the substrate S is preferably an inkjet method. With the inkjet method, the ink IK is ejected from the nozzles of the inkjet head toward the recesses R, and the ink IK is dripped into the recesses R. The ink IK contains a solvent L1. A type of solvent that allows the ink IK to be ejected from the nozzles is selected as the solvent L1.

[0045] In the first embodiment, the coating method is an inkjet method, but is not limited to this method. The coating method can be, for example, a slit coating method, a spin coating method, a spray coating method, a screen printing method, or a dispenser method.

[0046] In the next step (liquid property adjusting step) S3, the control device 20 causes the transfer robot 9 to transfer the substrate S to the container 101 of the substrate processing apparatus 10. A solution film F0 is disposed on the substrate S transferred to the container 101. The control device 20 controls the supply unit 110 to blow a supply gas G20 containing a solvent vapor G2 for adjusting the liquid properties of the solution film F0 into the inside of the container 101.

[0047] As a result, the atmosphere around the substrate S is replaced with the supply gas G20 containing the solvent vapor G2, and the solution film F0 disposed on the substrate S is exposed to the supply gas G20 containing the solvent vapor G2. The solution film F0 on the substrate S gradually incorporates the solvent vapor G2 components of the supplied supply gas G20, changing the liquid properties of the solution film F0. That is, the solution film F0 incorporates the solvent L2, thereby adjusting to a solution film F0'. The solvent L2 is an example of a second solvent. The solvent vapor G2 is a gas of the solvent L2. In this way, in the liquid property adjusting step S3, the liquid properties of the solution film F0 are adjusted, thereby generating a solution film F0'. The solvent L2 is incorporated as a liquid in the solution film F0'.

[0048] In step S4, the control device 20 determines whether the liquid property adjusting step S3 has been completed. If the liquid property adjusting step S3 has not been completed, i.e., if step S4 is NO, the control device 20 continues the liquid property adjusting step S3. If the liquid property adjusting step S3 has been completed, i.e., if step S4 is YES, the control device 20 stops the supply of solvent vapor G2 to the supply unit 110 and proceeds to the next step S5.

[0049] In step (drying step) S5, the control device 20 causes the transfer robot 9 to transfer the substrate S to the drying device 4. The solution film F0' processed in the liquid property adjusting step S3 is placed on the substrate S transferred to the drying device 4 by the transfer robot 9. The drying device 4 dries the solution film F0' on the substrate S at a pressure, time, and temperature determined based on the composition of the solution film F0', etc. As a result, a dry film F1 is formed in the recess R of the substrate S.

[0050] Next, in step (baking step) S6, the control device 20 causes the transfer robot 9 to transfer the substrate S to one of the processing devices 5 to 8. Then, in the baking step S6, the processing device executes a baking process to bake the dry film F1, thereby forming an organic film F2 in the recess R of the substrate S. This completes the processing of the substrate S, and the substrate S is unloaded from the manufacturing system 1000 to the outside.

[0051] The liquid property adjusting step S3 is preferably performed before the drying step S5, but may also be performed during the drying step S5 in the drying device 4. That is, the supply unit 110 may be provided in the coating device 1, in the drying device 4, in any of the other processing devices 5 to 8, or in the transfer chamber 11. The liquid property adjusting step S3 may be performed between the end of the coating step S2 and the end of the drying step S5.

[0052] Here, adjusting the liquid properties of the solution film F0 using the solvent vapor G2 takes a certain amount of time. For this reason, the supply unit 110 is preferably installed in a unit that has ample processing time while maintaining a tactile balance from the coating step S2 to the drying step S5. That is, the supply unit 110 is preferably installed in the substrate processing apparatus 10 between the coating apparatus 1 and the transfer chamber 11 in the first embodiment. The liquid property adjusting step S3 is preferably performed between the end of the coating step S2 and the start of the drying step S5.

[0053] The supply unit 110 is preferably provided on the transport path from the coating device 1 to the drying device 4, and in this embodiment, it is provided in the container 101 between the coating device 1 and the transport chamber 11. This achieves space saving.

[0054] The process of adjusting the liquid properties of the solution film F0 will be specifically described. The liquid properties of the solution film F0 are viscosity or surface tension. In the first embodiment, the solution film F0 is exposed to solvent vapor G2, and the solvent L2 is dissolved in the solution film F0, thereby adjusting the liquid properties of the solution film F0 and obtaining a solution film F0'.

[0055] On the other hand, Patent Documents 1 and 2 also disclose exposing a substrate to solvent vapor. However, in Patent Document 1, the solvent contained in the solution film is cyclohexanone, and the solvent vapor is vapor of PEGMIA (propylene glycol methyl ether acetate). PEGMIA has a higher saturated vapor pressure than cyclohexanone.

[0056] If the saturated vapor pressure of the solvent in the solvent vapor is higher than that of the solvent contained in the solution film, the liquid properties of the solution film will not be adjusted. This is because PEGMIA has a higher saturated vapor pressure than the cyclohexanone contained in the solution film, and therefore dries more easily than the cyclohexanone contained in the solution film, making it more difficult to incorporate into the solution film.

[0057] It should be noted that the solvent of the solvent vapor disclosed in Patent Document 2 is the same type as the solvent contained in the solution film, and therefore it is not possible to adjust the liquid properties of the solution film F0.

[0058] In the first embodiment, in the liquid property adjusting step S3, the solution film F0 disposed on the substrate S is exposed to a supply gas G20 containing a gas of a solvent L2 (i.e., solvent vapor G2) having a lower saturated vapor pressure at room temperature (25°C) than that of the solvent L1, thereby adjusting the liquid properties of the solution film F0 and obtaining an adjusted solution film F0'. The solution film F0' incorporates the solvent L2, which has a lower saturated vapor pressure than that of the solvent L1. The solvent L2 is a different solvent from the solvent L1. Note that the saturated vapor pressure of the solvent L2 is lower than that of the solvent L1 at any temperature within the range of 20°C or higher and 25°C or lower.

[0059] The solvent L2 may be selected depending on whether the dominant cause of the coffee ring is the phenomenon of Marangoni convection or the phenomenon of the ink IK wetting up the side wall surface of the bank. If the dominant cause is the phenomenon of Marangoni convection, adjusting the viscosity as a liquid property is advantageous, whereas if the dominant cause is the phenomenon of the ink IK wetting up the side wall surface of the bank, adjusting the surface tension as a liquid property is advantageous.

[0060] Therefore, the solvent L2 may be selected so as to obtain desired liquid properties in the solution film F0′. For example, the solvent L2 may be selected so that the viscosity of the solution film F0′ is higher than the viscosity of the solution film F0, or so that the surface tension of the solution film F0′ is lower than the surface tension of the solution film F0.

[0061] Increasing the viscosity of the solution film F0' suppresses the ink flow in the solution film F0' and reduces the Marangoni convection. In addition, decreasing the surface tension of the solution film F0' reduces the ink wetting up the sidewall surface of the bank.

[0062] The solvent L1 preferably contains at least one organic solvent capable of dissolving the solute, such as, but not limited to, cyclohexanone, N-methylformamide, and N-methylpyrrolidone.

[0063] The solvent L2 used to obtain the high-viscosity solution film F0' preferably contains at least one organic solvent. That is, the viscosity of the solvent L2 is preferably higher than that of the solvent L1. In this case, examples of the at least one organic solvent contained in the solvent L2 include, but are not limited to, cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, 2.3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol, propylene glycol diacetate, and 3-methoxybutanol.

[0064] The solvent L2 used to obtain the low-surface-tension solution film F0' preferably contains at least one organic solvent. That is, the surface tension of the solvent L2 is preferably lower than that of the solvent L1. In this case, examples of the at least one organic solvent contained in the solvent L2 include, but are not limited to, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, dipropylene glycol methyl ether acetate, 3-methoxybutyl acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate, n-hexyl acetate, ethyl cellosolve acetate, and diethylene glycol monomethyl ether.

[0065] As described above, a solvent that has advantageous liquid properties may be selected as the solvent L2 depending on the saturated vapor pressure, viscosity, surface tension, etc. of the solvent L1 contained in the solution film F0.

[0066] The solvent contained in the ink IK is not limited to the single solvent L1, and the ink IK may further contain at least one solvent different from the solvent L1 in order to adjust the properties of the ink IK. That is, the ink IK may contain multiple types of solvents. In this case, the solvent L2 may be selected from the multiple solvents contained in the ink IK, as long as the solvent L2 has a saturated vapor pressure lower than that of the solvent L1.

[0067] Fig. 6 is an explanatory diagram of the supply unit 110 according to the first embodiment. Fig. 6 schematically illustrates a cross section of the supply unit 110. In the first embodiment, the supply unit 110 is configured to supply a mixed gas of solvent vapor G2 and carrier gas G1 as a supply gas G20 to the internal space of a container 101 in which a substrate S is placed.

[0068] In addition, in the first embodiment, the supply unit 110 is configured to selectively supply either a supply gas G20 containing solvent vapor G2 or a purge gas G0 not containing solvent vapor to the internal space of the container 101.

[0069] The supply unit 110 includes a flow rate adjustment mechanism 21 , a temperature adjustment mechanism 29 , a solvent container 22 , a temperature adjustment mechanism 23 , a check valve 24 , a three-way valve 25 , a gas flow rate adjustment mechanism 31 , and a gas temperature adjustment mechanism 32 .

[0070] The supply system for the supply gas G20 containing the solvent vapor G2 will now be described. A carrier gas G1 carrying the solvent vapor G2 is introduced from outside into the supply unit 110. An inert gas such as nitrogen or argon is suitable as the carrier gas G1, but a gas other than an inert gas may also be used as long as it has a composition different from that of the solvent in the solution film F0. For example, the carrier gas G1 may be a gas such as clean dry air.

[0071] The carrier gas G1 passes through a flow rate adjusting mechanism 21. The flow rate adjusting mechanism 21 is, for example, a mass flow controller, and can adjust the flow rate (supply amount) of the carrier gas G1.

[0072] The flow rate adjustment mechanism 21 is connected by a pipe to a solvent container 22 in which the solvent L2 is stored. A temperature adjustment mechanism 29 is disposed in the pipe. The temperature adjustment mechanism 29 is, for example, a heater or a cooler, and can adjust the temperature of the carrier gas G1 output from the flow rate adjustment mechanism 21 and supplied to the solvent container 22.

[0073] The temperature-adjusted carrier gas G1 is supplied through a pipe into the solvent container 22 and introduced into the liquid (liquid phase) solvent L2 as bubbles 28 of the carrier gas G1. As the bubbles 28 of the carrier gas G1 pass through the solvent L2, solvent vapor G2 of the solvent L2 is taken into the carrier gas G1 and output from a pipe connected to the solvent container 22 as a supply gas (mixed gas) G20.

[0074] Here, a temperature adjustment mechanism 23 is disposed in the solvent container 22. The temperature adjustment mechanism 23 is, for example, a heater or a cooler, and can adjust the temperature of the solvent L2 in the solvent container 22.

[0075] The supply amount of solvent vapor G2 per unit volume of supply gas G20 containing solvent vapor G2 and carrier gas G1 can be adjusted by temperature adjustment mechanism 29, which adjusts the temperature of carrier gas G1, and temperature adjustment mechanism 23, which adjusts the temperature of solvent L2 in solvent container 22. In addition, the supply amount of carrier gas G1 can be adjusted by flow rate adjustment mechanism 21.

[0076] As described above, in the first embodiment, a mixed gas, supply gas G20, is generated by a bubbling process in which carrier gas G1 is supplied to liquid solvent L2. Then, the supply gas G20 containing solvent vapor G2 and carrier gas G1 is supplied to a space near the substrate S via the check valve 24 and the three-way valve 25.

[0077] The three-way valve 25 has three ports, the first port is connected to a pipe connected to the solvent container 22, the second port is connected to a pipe connected to the container 101, and the third port is connected to a pipe through which the purge gas G0 is introduced.

[0078] The three-way valve 25 is provided in the supply unit 110 for the purpose of switching the type of gas supplied to the space near the substrate S, and can be switched by the control device 20 to selectively supply either the supply gas G20 or the purge gas G0 to the internal space of the container 101. That is, the three-way valve 25 can supply the supply gas G20 into the interior of the container 101 by being set to a first state in which the third port is closed and the first and second ports are open, and can supply the purge gas G0 into the interior of the container 101 by being set to a second state in which the first port is closed and the third and second ports are open.

[0079] The check valve 24 is disposed in the piping between the three-way valve 25 and the solvent container 22 to prevent the purge gas G0 from flowing back toward the solvent container 22 .

[0080] Next, the supply system for the purge gas G0 will be described. The purge gas G0 is supplied to a pipe connected to the third port of the three-way valve 25 of the supply unit 110. When the control device 20 switches the three-way valve 25 from the first state to the second state, the supply of the supply gas G20 to the interior of the container 101 is stopped, and the purge gas G0 is supplied into the interior of the container 101. The atmosphere in the space near the substrate S placed inside the container 101 is replaced from the solvent vapor G2 with the purge gas G0. That is, when the purge gas G0 is supplied into the interior of the container 101, the solvent vapor G2 remaining near the substrate S is expelled by the purge gas G0, and the atmosphere in the space near the substrate S is replaced with the purge gas G0. This terminates the supply of the solvent vapor G2 to the solution film F0', and the atmosphere in the vicinity of the substrate S is prepared in preparation for the next substrate processing, i.e., drying processing.

[0081] The purge gas G0 is preferably an inert gas such as nitrogen or argon, but may be any gas other than an inert gas as long as it has a composition different from that of the solvent contained in the solution film F0'. For example, the purge gas G0 may be a gas such as clean dry air.

[0082] A gas flow rate adjustment mechanism 31 is disposed in the piping connected to the third port of the three-way valve 25. The gas flow rate adjustment mechanism 31 is, for example, a gas regulator. The supply amount of the purge gas G0 can be adjusted by the gas flow rate adjustment mechanism 31.

[0083] A gas temperature adjustment mechanism 32 is disposed in the piping connected to the third port of the three-way valve 25. The gas temperature adjustment mechanism 32 is, for example, a heater or a cooler. The temperature of the purge gas G0 supplied near the substrate S can be adjusted by the gas temperature adjustment mechanism 32.

[0084] According to the above-described configuration of the supply unit 110, a supply gas G20, which is a mixed gas of the solvent vapor G2, which is a gas of the solvent L2, and the carrier gas G1, can be generated by a bubbling process. In addition, by switching the three-way valve 25, either the supply gas G20 or the purge gas G0 can be selectively supplied to the internal space of the container 101.

[0085] As described above, according to the first embodiment, the liquid properties of the solution film F0 are adjusted by supplying the solvent vapor G2 contained in the supply gas G20, which is a mixed gas, to the periphery of the substrate S. In the first embodiment, the liquid properties are, for example, viscosity or surface tension. The solvent L2 that becomes the solvent vapor G2 is a solvent that is less likely to volatilize than the solvent L1 contained in the ink IK. In other words, the solvent L2 has a lower saturated vapor pressure at room temperature (25° C.) than the solvent L1 contained in the ink IK. In this way, in the first embodiment, the solvent vapor G2 of the solvent L2, which has a lower saturated vapor pressure at room temperature (25° C.) than the solvent L1 contained in the solution film F0, is supplied to the periphery of the substrate S.

[0086] As a result, the solvent L2 is incorporated into the solution film F0, and a solution film F0' with adjusted liquid properties is obtained, which reduces the Marangoni convection or wetting of the ink IK and reduces the occurrence of unevenness in the film thickness of the formed dried film F1, i.e., the organic film F2. In this way, the first embodiment provides a technique that is advantageous for film formation.

[0087] The amount of solvent L2 supplied to the solution film F0' is preferably in the range of 30 vol% to 50 vol% of the total amount of solvent L1 contained in the solution film F0'. This range allows the liquid properties of the ink IK contained in the solution film F0' to be effectively shifted, effectively reducing film thickness unevenness. However, if more than 50 vol% of solvent L2 is added to the solution film F0', for example, the viscosity may become too high, causing the ink IK to lose its fluidity and potentially losing the minimum leveling (flattening) performance required of the ink IK. Furthermore, if the total amount of solvent in the solution film F0' becomes too large, the drying time may become too long.

[0088] Furthermore, whether the dominant cause of the coffee ring, the phenomenon of Marangoni convection or the phenomenon of the ink IK wetting up the sidewall surface of the bank, also depends on the size of the recess R, i.e., the size (amount of ink) of the solution film F0. The type of solvent L2 can be selected depending on the size of the recess R, i.e., the size (amount of ink) of the solution film F0.

[0089] For example, when the pixel resolution of a 55-inch organic EL panel is, for example, 4K, it is preferable to reduce the Marangoni convection, and it is preferable to use a solvent L2 having a higher viscosity than solvent L1 so that the viscosity of the solution film F0' is higher than the viscosity of the solution film F0.

[0090] Furthermore, for example, when the pixel resolution of a 55-inch organic EL panel is 8K, it is preferable to reduce the wetting of the ink IK onto the side wall surface of the bank, and it is preferable to use a solvent L2 having a lower surface tension than solvent L1 so that the surface tension of the solution film F0' is lower than the surface tension of the solution film F0.

[0091] In the above description, the supply gas G20 contains the carrier gas G1, but the carrier gas G1 may be omitted from the supply gas G20. In this case, the supply gas G20 is the solvent vapor G2.

[0092] <Modification 1> Modification 1 of the first embodiment will be described. In the above first embodiment, an example has been described in which the supply gas G20 contains the solvent vapor G2, but the supply gas G20 may also contain a surfactant gas. That is, by adding a surfactant to the solvent container 22 of the supply unit 110 shown in FIG. 6, the surfactant gas is added to the solvent vapor G2, which is the gas of the solvent L2.

[0093] Then, the solvent L2 and the surfactant are incorporated into the solution film F0, and a solution film F0' is produced. Even if the solution film F0' contains only a trace amount (several tens of ppm or more) of surfactant, the surface tension of the solution film F0' is significantly reduced compared to the surface tension of the solution film F0. In other words, the solution film F0' contains a mixture in which a surfactant is added to the solvent L1. The surface tension of this mixture is lower than the surface tension of the solvent L1.

[0094] Examples of the surfactant include nonionic surfactants, such as 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyne-4,7-diol, 3,6-dimethyl-4-octyne-3,6-diol, ethylene oxide adducts of acetylene glycol (e.g., Acetylenol EH; manufactured by Kawaken Fine Chemicals), ethylene oxide adducts of acetylene alcohol (e.g., Acetylenol EL; manufactured by Kawaken Fine Chemicals), ethylene oxide adducts of acetylene or alkanes (e.g., Surfynol 104, 82, 465, 485; manufactured by Air Products), and Tergitol 15-S-5 or Tergitol 15-S-7 (both manufactured by Union Carbide Company).

[0095] In addition, the surfactant can be fluorine-based surfactant.As the fluorine-based surfactant, for example, surfactants in which a fluorine-containing alkyl group is attached as a lipophilic group, such as a structure in which a sulfonyl group is directly bonded to a perfluoroalkyl group as a lipophilic group that imparts leveling performance, or a structure in which a carboxy group is directly bonded to a perfluoroalkyl group, can be mentioned.As the surfactant in which a fluorine-containing alkyl group is attached as a lipophilic group, for example, perfluoroalkyl sulfonate, perfluoroalkyl ethylene oxide adduct, perfluoroalkyl trimethyl ammonium salt, perfluoroalkyl amino sulfonate, perfluoroalkyl group-hydrophilic group-containing oligomer, perfluoroalkyl group-lipophilic group-containing oligomer, perfluoroalkyl group-(hydrophilic group and lipophilic group)-containing oligomer, perfluoroalkyl group-lipophilic group-containing urethane, perfluoroalkyl phosphate ester, perfluoroalkyl carboxylate, perfluoroalkyl amine compound, perfluoroalkyl quaternary ammonium salt, perfluoroalkyl betaine, non-dissociable perfluoroalkyl compound, or fluorine atom-containing low molecular weight compound such as fluorine silicone oil can be mentioned.

[0096] The surfactant may be a silane surfactant, such as a silicon atom-containing low molecular weight compound, such as dimethyl silicone, diphenyl silicone, hydrogen-modified polysiloxane, vinyl-modified polysiloxane, hydroxy-modified polysiloxane, amino-modified polysiloxane, carboxyl-modified polysiloxane, chlorine-modified polysiloxane, epoxy-modified polysiloxane, methacryloxy-modified polysiloxane, mercapto-modified polysiloxane, fluorine-modified polysiloxane, long-chain alkyl-modified polysiloxane, phenyl-modified polysiloxane, or silicone-modified copolymer.

[0097] The surfactant to be added is more preferably selected from the above-mentioned nonionic surfactants and fluorine-based surfactants depending on the type of solvent in the ink IK.

[0098] The solvent L2 is selected so as to have advantageous liquid properties depending on the saturated vapor pressure and surface tension of the solvent L1 contained in the solution film F0. In this case, the surfactant can be supplied to the solution film F0 as vapor together with the solvent L2.

[0099] FIG. 7 is a table showing the physical properties of one example of solvent L1, which is the first solvent, in the first embodiment or Modification 1 thereof, the physical properties of six examples of solvent L2, which is the second solvent, and the physical properties of one example of a surfactant in Modification 1. In FIG. 7, the physical properties of three examples of high-viscosity solvents and three examples of low-surface-tension solvents are shown as solvent L2. Furthermore, the physical properties of one example of a surfactant are shown as surfactants. Furthermore, the physical properties of one example of a solvent are shown as solvent L1. It is preferable to use the solvents shown in FIG. 7 as solvents L1 and L2. It is also preferable to use the surfactants shown in FIG. 7 as surfactants.

[0100] The saturated vapor pressures of the six solvents that can be selected as solvent L2 are lower than the saturated vapor pressure of the one solvent that can be selected as solvent L1. The viscosities of the three high-viscosity solvents that can be selected as solvent L2 are higher than the viscosity of the one solvent that can be selected as solvent L1. The surface tensions of the three low-surface-tension solvents that can be selected as solvent L2 are lower than the surface tension of the one solvent that can be selected as solvent L1.

[0101] Second Embodiment A second embodiment will be described. Hereinafter, elements with the same reference numerals as those in the first embodiment will be considered to have substantially the same configurations and functions as those described in the first embodiment unless otherwise specified, and differences from the first embodiment will be mainly described.

[0102] FIG. 8A is a schematic plan view of a substrate S processed in a manufacturing system according to a second embodiment. In the production of displays, including organic EL panels, the substrate S is becoming larger to increase productivity. Under these circumstances, in order to achieve high-mix production according to customer needs, "mixed production" is being implemented, in which panels with multiple specifications (pixel size and pixel pitch) are produced on a single substrate S. The substrate S is a large substrate, for example, an 8.5-generation (2.5 m × 2.2 m) glass substrate. Six 55-inch panels are manufactured by dividing the substrate S into, for example, six equal parts. For example, three of the six manufactured panels have a 4K resolution, and the remaining three have an 8K resolution. Region A1 of the substrate S corresponds to a 4K resolution panel, and region A2 of the substrate S corresponds to an 8K resolution panel. Region A1 is an example of a first region, and region A2 is an example of a second region.

[0103] Each pixel in each panel is composed of three subpixels, RGB. The subpixel configuration in each panel is as described in the first embodiment. Here, for the same panel size, the size of the subpixel in a panel with an 8K resolution is smaller than the size of the subpixel in a panel with a 4K resolution. In other words, the size of the recess in region A2 is smaller than the size of the recess in region A1.

[0104] Fig. 8B is an explanatory diagram of a recess R1 in region A1 in the second embodiment. Fig. 8C is an explanatory diagram of a recess R2 in region A2 in the second embodiment. Fig. 8B illustrates one of the multiple recesses R1 in region A1 of the substrate S, and Fig. 8C illustrates two of the multiple recesses R2 in region A2 of the substrate S. The recess R1 is a recess that can become a subpixel corresponding to 4K and is defined by a bank. The recess R2 is a recess that can become a subpixel corresponding to 8K and is defined by a bank.

[0105] Each step of the substrate processing method (article manufacturing method) of the second embodiment follows the flowchart of FIG. 4 described in the first embodiment. In the coating step S2 of FIG. 4, ink is supplied to each recess R1, R2 to form a solution film F0. The recess R2 is smaller in size than the recess R1. That is, the amount of the solution film F0 supplied to the recess R2 is less than the amount of the solution film F0 supplied to the recess R1. In other words, the amount of the solution film F0 supplied to the recess R1 is greater than the amount of the solution film F0 supplied to the recess R2. The recess R1 is an example of a first recess, and the recess R2 is an example of a second recess. As described in the first embodiment, each solution film F0 is composed of a solution containing a first solvent L1 and a solute.

[0106] Incidentally, when an organic film for an organic EL element is produced by drying a solution film, the cause of the coffee ring, i.e., the cause of film thickness unevenness, is determined by whether the phenomenon of Marangoni convection or the phenomenon of ink wetting up the side wall surface of the bank is dominant, depending on the size of the recess, i.e., the size of the solution film (amount of ink).

[0107] For example, if a large amount of ink is dropped into a recess, the Marangoni convection continues for a long time. Therefore, the main cause of film thickness unevenness is Marangoni convection. On the other hand, if a small amount of ink is dropped into a recess, the main cause of film thickness unevenness is wetting of the ink onto the sidewall surface. The ink drop amount also depends on the ink material composition design, mainly the solute concentration, and the film design of the organic film to be produced, mainly the film thickness.

[0108] Furthermore, when the pixel size is small, such as in a high-definition display (for example, in the case of 8K), the amount of solution that can be held in the recesses where the subpixels are formed is small. In other words, the amount of solvent in the entire panel is small, and the time required for drying is short. On the other hand, when the pixel size is large (for example, in the case of 4K), the amount of solution that can be held in the recesses where the subpixels are formed is large. In other words, the amount of solvent in the entire panel is large, and the time required for drying is long.

[0109] Thus, when the pixel size is large, i.e., when the recess size is large, a large amount of ink is required, and the main cause of film thickness unevenness shifts to Marangoni convection. On the other hand, when the pixel size is small, i.e., when the recess size is small, a small amount of ink is required, and the main cause of film thickness unevenness shifts to ink wetting onto the sidewall surfaces. Thus, the main cause of film thickness unevenness differs depending on the ink droplet amount, i.e., pixel size.

[0110] 8A to 8C , the drying process of the solution film F0 differs between region A1, where 4K-resolution organic EL panels are manufactured, and region A2, where 8K-resolution organic EL panels are manufactured, so adjusting the liquid properties accordingly is effective. In region A1, a large amount of ink is supplied to each recess R1, and the drying time is long, so the dominant cause of film thickness unevenness is Marangoni convection. On the other hand, in region A2, a small amount of ink is supplied to each recess R2, and the drying time is short, so the dominant cause of film thickness unevenness is wetting of the ink onto the sidewall surface of the bank.

[0111] 9 is an explanatory diagram of a partial configuration of a substrate processing apparatus according to a second embodiment. The substrate processing apparatus of the second embodiment has two supply units 110-1 and 110-2 instead of the supply unit 110 in the substrate processing apparatus 10 of the first embodiment. Furthermore, the substrate processing apparatus of the second embodiment further has a box 40. Other configurations of the substrate processing apparatus of the second embodiment are similar to the configuration of the substrate processing apparatus 10 of the first embodiment.

[0112] The configuration of each supply unit 110-1, 110-2 is similar to the configuration of the supply unit 110 in the substrate processing apparatus 10 of the first embodiment. However, the solvent L2 stored in the solvent container 22 of the supply unit 110-1 and the solvent L3 stored in the solvent container 22 of the supply unit 110-2 are different from each other. That is, the type of solvent L3 is different from the type of solvent L2. Solvent L2 is an example of a second solvent, and solvent L3 is an example of a third solvent. Each of solvents L2 and L3 has a lower saturated vapor pressure at 25°C than solvent L1.

[0113] The solvent L2 is, for example, the high-viscosity solvent described in the first embodiment. That is, the solvent L2 has a higher viscosity than the solvent L1.

[0114] The solvent L3 is, for example, the low surface tension solvent described in the first embodiment. That is, the solvent L3 is a solvent having a lower surface tension than the solvent L1.

[0115] The box 40 is disposed inside the container 101 in Figures 2 and 3. The box 40 is disposed inside the container 101 so as to be located above the substrate S transported by the transport robot 9 (Figures 2 and 3). That is, the box 40 is spaced apart from the substrate S so as not to come into contact with the substrate S. Furthermore, the box 40 is disposed in a size and position such that it overlaps the entire substrate S when viewed from above, i.e., when viewed in a direction perpendicular to the main surface of the substrate S.

[0116] The box 40 is a box that is open on the side facing the substrate S, i.e., on the bottom side. The box 40 is configured to define a space SP1 that communicates with the area A1, and a space SP2 that communicates with the area A2. That is, the space SP1 faces the area A1 in the Z direction, and the space SP2 faces the area A2 in the Z direction. In the first embodiment, the box 40 has a partition plate 42 that separates the space SP1 from the space SP2. The space SP1 is an example of a first space, and the space SP2 is an example of a second space.

[0117] The box 40 has an air inlet 41-1 connected to the supply unit 110-1 and an air inlet 41-2 connected to the supply unit 110-2.

[0118] The supply unit 110-1 is configured to supply a supply gas G20 to the space SP1 through the gas inlet 41-1. The supply gas G20 is a mixed gas containing a solvent L2 gas, i.e., solvent vapor G2, and a carrier gas G1. The supply gas G20 is an example of a first supply gas.

[0119] The supply unit 110-2 is configured to supply a supply gas G30 to the space SP2 via the gas inlet 41-2. The supply gas G30 is a mixed gas containing a solvent L3 gas, i.e., solvent vapor G3, and a carrier gas G1. The supply gas G30 is an example of a second supply gas.

[0120] In the second embodiment, in the liquid property adjustment process S3 of Figure 4, a supply gas G20 is supplied to the space SP1, thereby exposing the solution film F0 arranged in the region A1 of the substrate S to the supply gas G20, and a supply gas G30 is supplied to the space SP2, thereby exposing the solution film F0 arranged in the region A2 of the substrate S to the supply gas G30.

[0121] When the solution film F0 placed in region A1 is exposed to the supply gas G20, the solvent vapor G2, i.e., the solvent L2, contained in the supply gas G20 is absorbed into the solution film F0, adjusting the liquid properties of the solution film F0, and as a result, a solution film F0' with adjusted liquid properties is produced.

[0122] Furthermore, when the solution film F0 arranged in region A2 is exposed to the supply gas G30, the solvent vapor G3, i.e., the solvent L3, contained in the supply gas G30 is absorbed into the solution film F0, adjusting the liquid properties of the solution film F0, and as a result, a solution film F0'' with adjusted liquid properties is produced.

[0123] Then, in the drying step S5, Marangoni convection is mainly reduced in the solution film F0', and by drying the solution film F0', a dry film of uniform thickness is produced. Also, in the drying step S5, wetting of the side wall surface of the bulk is mainly reduced in the solution film F0" and by drying the solution film F0", a dry film of uniform thickness is produced. Thereafter, in the baking step S6, these dry films are baked, and an organic film (functional film) of uniform thickness is produced.

[0124] In addition, in the second embodiment, in the liquid property adjustment process S3, the space SP1 and the space SP2 are separated by the box 40, so that the diffusion of the solvent vapor G2 and the solvent vapor G3 is suppressed and the color mixing of the solvent vapor G2 and the solvent vapor G3 is reduced.

[0125] 9, the box 40 has an exhaust port communicating with the space SP1 and an exhaust port communicating with the space SP2. Each exhaust port is connected to an exhaust mechanism (not shown).

[0126] 4 is completed, the control device 20 operates the exhaust mechanism, and the solvent vapor remaining in the spaces SP1 and SP2 is quickly exhausted. In addition, the spaces SP1 and SP2 can be made to have a negative pressure compared to the space around the box 40, which reduces the diffusion of the solvent vapor into the space around the box 40.

[0127] <Modification 2> Modification 2 of the second embodiment will be described. If the solvent adheres to the surface of the box 40 and aggregates, there is a risk that the aggregated solvent will drip onto the substrate. FIG. 10 is an explanatory diagram of the configuration of a portion of the substrate processing apparatus according to Modification 2 of the second embodiment. In Modification 2, a liquid-repellent member 44 is provided at least inside the box 40. Note that the air supply port is not shown in FIG. 10. Also shown in FIG. 10 are an exhaust port 43-1 communicating with the space SP1 and an exhaust port 43-2 communicating with the space SP2, which are not shown in FIG.

[0128] The liquid-repellent member 44 is provided, for example, on the lower end of the partition plate 42 of the box 40 , on the inner surface of the box 40 , and on the lower end of the outer surface of the box 40 .

[0129] By providing the liquid-repellent member 44 on the box 40, adhesion of the solvent to the surface of the box 40 is reduced.

[0130] The receding dynamic contact angle of the liquid-repellent member 44 with respect to pure water is preferably 90 degrees or more and 120 degrees or less, so that adhesion of the solvent to the inner surface of the box 40 can be more effectively reduced.

[0131] The material of the liquid-repellent member 44 is preferably a fluororesin. For example, the material of the liquid-repellent member 44 may be a film made of a resin containing fluorine, such as tetrafluoroethylene resin (PTFE), perfluoroalkoxy resin (PFA), fluorinated ethylene propylene resin (FEP), ethylene tetrafluoroethylene resin, or polychlorotrifluoroethylene resin, or a fluorine-containing silane coupling agent.

[0132] In addition, when the supply units 110-1, 110-2 and the box 40 are applied to the drying device 4, the liquid-repellent material 44 is provided in the box 40, thereby reducing adhesion of the solvent to the box 40 and reducing the impact on the drying process S5.

[0133] The second embodiment and the modified example of the second embodiment may be combined with at least one of the first embodiment and the modified example of the first embodiment.

[0134] Third Embodiment A third embodiment will be described below. Elements with the same reference numerals as those in the first or second embodiment will have substantially the same configurations and functions as those described in the first or second embodiment unless otherwise specified, and differences from the first and second embodiments will be mainly described.

[0135] In the first embodiment, an example is described in which the solvent vapor G2 supplied to the substrate S is vapor (gas) of a single solvent, and in the second embodiment, an example is described in which the solvent vapor G2 supplied to the substrate S is vapor (gas) of a single solvent, and the solvent vapor G3 supplied to the substrate S is vapor (gas) of a single solvent, but this is not limited to this.

[0136] For example, the solvent vapor G2 supplied to the substrate S may contain vapor (gas) of multiple types of solvents, and the solvent vapor G3 supplied to the substrate S may contain vapor (gas) of multiple types of solvents. That is, gases of multiple types of solvents may be supplied to the substrate S. The solvent vapor G2 will be described below.

[0137] The solvent vapor G2 supplied to the substrate S can be produced by generating multiple types of solvent vapors from multiple types of solvents and mixing the multiple types of solvent vapors, or by producing solvent vapor from a mixed solvent obtained by mixing multiple types of solvents. Either method can be used to generate the solvent vapor G2, but the former method makes it easier to adjust the mixing ratio of the multiple types of solvent vapors. Below, we will specifically explain the configuration of the former supply unit, that is, the supply unit that generates solvent vapor G2 by mixing multiple types of solvent vapors. Note that the configuration of the supply unit that generates solvent vapor G3 is the same as the configuration of the supply unit that generates solvent vapor G2, so we will not explain it here.

[0138] 11 is an explanatory diagram of a supply unit 110B of a substrate processing apparatus according to a third embodiment. The substrate processing apparatus of the third embodiment is configured by replacing the supply unit 110 in the substrate processing apparatus of the first embodiment with a supply unit 110B. Note that the supply unit 110-1 in the substrate processing apparatus of the second embodiment may be replaced with the supply unit 110.

[0139] The following description will be given taking as an example a case where the solvent vapor G2 is two types of solvent vapor. The supply unit 110B is an example of a gas supply section. The supply unit 110B has a supply unit section 110B-1 and a supply unit section 110B-2. Each of the supply unit sections 110B-1 and 110B-2 has the same configuration as the supply unit 110 shown in FIG. 6 described in the first embodiment.

[0140] In the third embodiment, the solvent L2-1 is stored in the solvent container 22 of the supply unit 110B-1, and the solvent L2-2 is stored in the solvent container 22 of the supply unit 110B-2. The solvents L2-1 and L2-2 are different from each other. The solvent exemplified as the solvent L2 described in the first embodiment can be used for each of the solvents L2-1 and L2-2.

[0141] The supply unit 110B-1 generates a mixed gas G20-1 of solvent vapor G2-1, which is a gas of the solvent L2-1, and a carrier gas G1, and the supply unit 110B-2 generates a mixed gas G20-2 of solvent vapor G2-2, which is a gas of the solvent L2-2, and the carrier gas G1. The mixed gas G20-1 and the mixed gas G20-2 are then mixed to generate a supply gas G20. The supply gas G20 is supplied to the container 101 shown in FIG.

[0142] The supply gas G20 of the third embodiment contains the solvent vapor G2, which is a mixture of the solvent vapor G2-1 and the solvent vapor G2-2. That is, the supply gas G20 contains the solvent vapor G2-1, the solvent vapor G2-2, and the carrier gas G1.

[0143] The mixing ratio of the solvent vapor G2-1 and the solvent vapor G2-2 can be adjusted by the control device 20 controlling the flow rate adjustment mechanisms 21 of the supply units 110B-1 and 110B2 to adjust the flow rate of the carrier gas G1. In the third embodiment, the volumetric flow rate of the carrier gas G1 is adjusted by the flow rate adjustment mechanisms 21 of the supply units 110B-1 and 110B2, and the mixing ratio of the solvent vapor G2-1 and the solvent vapor G2-2 is adjusted by volume. In this way, the solvent vapor G2-1 and the solvent vapor G2-2 can be supplied to the substrate S at a desired mixing ratio.

[0144] Although the example has been described using two types of solvents, the present invention is not limited to this and may use three or more types of solvents. That is, the supply unit 110B may be provided with the number of supply units corresponding to the number of types of solvents to be mixed.

[0145] In this way, multiple types of solvent vapor are mixed at a desired mixing ratio and supplied to the substrate S, making it possible to finely adjust the solution film F0, thereby further improving the planarization of the organic film (functional film) that is formed.

[0146] Here, solvent L2-1 is preferably a solvent having a higher viscosity than solvent L1, and solvent L2-2 is preferably a solvent having a lower surface tension than solvent L1. Solvent L2-1 is preferably a high-viscosity solvent exemplified in the first embodiment, and solvent L2-2 is preferably a low-surface-tension solvent exemplified in the first embodiment.

[0147] This effectively reduces the phenomena that cause film thickness unevenness, namely, the phenomenon of Marangoni convection and the phenomenon of ink wetting. Furthermore, by adjusting the mixing ratio of the solvent vapors G2-1 and G2-2 depending on the degree of contribution of these two phenomena, it becomes possible to more precisely adjust the liquid properties of the solution film F0. This further improves the planarization of the formed organic film (functional film).

[0148] When the supply unit 110B is applied to the drying device 4, the mixing ratio of the solvent vapors G2-1 and G2-2 can be changed according to the progress of the drying process of the solution film F0, making it possible to supply the solvent vapor according to the progress of the drying of the solution film F0.

[0149] The third embodiment and the modified example of the third embodiment may be combined with at least one of the first embodiment, the modified example of the first embodiment, the second embodiment, and the modified example of the second embodiment.

[0150] <Fourth Embodiment> A fourth embodiment will be described. Hereinafter, unless otherwise specified, elements having the same reference numerals as those in the first, second, or third embodiment will have substantially the same configurations and functions as those described in the first, second, or third embodiment, and differences from the first, second, and third embodiments will be mainly described.

[0151] 12A and 12B are schematic diagrams of a substrate S processed in a manufacturing system according to a fourth embodiment. In the production of displays, including organic EL panels, the substrate S is becoming larger to increase productivity. Under these circumstances, in order to achieve high-mix production according to customer needs, "mixed production" is becoming more common, in which panels with multiple specifications (pixel size and pixel pitch) are produced on a single substrate S. The substrate S is a large substrate, such as an 8.5-generation (2.5 m x 2.2 m) glass substrate. Each pixel in each panel is composed of three subpixels: RGB. The subpixel configuration of each panel is as described in the first embodiment.

[0152] Furthermore, in order to increase the operating rate of a factory on a production line where the product lineup of panels such as organic EL panels is changed, it is necessary to efficiently change over the setup when the product lineup is changed.

[0153] For example, as shown in FIG. 12A , of six panels manufactured from substrate S, three are 55-inch panels with a 4K resolution, and the remaining three are 55-inch panels with an 8K resolution. Region A1 of substrate S corresponds to a panel with a 4K resolution, and region A2 of substrate S corresponds to a panel with an 8K resolution. Region A1 is an example of a first region, and region A2 is an example of a second region. As shown in FIG. 12A , the size of recess R12 (subpixel) in which the solution film F0 is arranged in region A2 is smaller than the size of recess R11 (subpixel) in which the solution film F0 is arranged in region A1.

[0154] Furthermore, for example, as shown in FIG. 12B , of five panels manufactured from the substrate S, three are 65-inch panels with a 4K resolution, and the remaining two are 55-inch panels with a 4K resolution. Region A1 of the substrate S corresponds to the 65-inch panel, and region A2 of the substrate S corresponds to the 55-inch panel. Region A1 is an example of a first region, and region A2 is an example of a second region. As shown in FIG. 12B , the size of the recess R22 (subpixel) in which the solution film F0 is arranged in region A2 is smaller than the size of the recess R21 (subpixel) in which the solution film F0 is arranged in region A1.

[0155] 12A to layout B shown in Fig. 12B, or from layout B to layout A. In this case, in the configuration of the second embodiment described above, it is necessary to switch boxes 40.

[0156] 13 is an explanatory view of a partial configuration of a substrate processing apparatus according to a fourth embodiment. The substrate processing apparatus of the fourth embodiment includes a box 40C having a different configuration from the box 40 of the second embodiment.

[0157] The box 40C is disposed inside the container 101 in Figures 2 and 3. The box 40C is disposed inside the container 101 so as to be located above the substrate S transported by the transport robot 9 (Figures 2 and 3). That is, the box 40C is spaced apart from the substrate S so as not to come into contact with the substrate S. Furthermore, the box 40C is disposed in a size and position such that it overlaps with the entire substrate S in a plan view, i.e., when viewed in a direction perpendicular to the main surface of the substrate S.

[0158] The box 40C is a box that is open on the side facing the substrate S, i.e., on the bottom side. The box 40C defines a space SP0 facing the substrate S. The box 40C has partition plates 42C that divide the space SP0 facing the substrate S into a plurality of partial spaces P1, P2, P3, and P4.

[0159] The substrate processing apparatus of the fourth embodiment includes a plurality of supply devices 110C-1, 110C-2, 110C-3, and 110C-4. The supply device 110C-1 is connected to an air supply port in the box 40C that corresponds to the partial space P1. The supply device 110C-2 is connected to an air supply port in the box 40C that corresponds to the partial space P2. The supply device 110C-3 is connected to an air supply port in the box 40C that corresponds to the partial space P3. The supply device 110C-4 is connected to an air supply port in the box 40C that corresponds to the partial space P4.

[0160] The plurality of supply devices 110C-1, 110C-2, 110C-3, and 110C-4 have the same configuration, and the supply device 110C-1 will be described as a representative of these.

[0161] The supply device 110C-1 has a plurality of supply units, for example, two supply units 110-1 and 110-2. The configuration of the supply units 110-1 and 110-2 is as shown in Fig. 9 described in the second embodiment. That is, the supply unit 110-1 can supply a supply gas G20 containing solvent vapor G2, which is a gas of the solvent L2, to the partial space P1, and the supply unit 110-2 can supply a supply gas G30 containing solvent vapor G3, which is a gas of the solvent L3, to the partial space P1.

[0162] The solvent vapor G2 is, for example, the vapor of a high-viscosity solvent described in the first embodiment, i.e., the vapor of a solvent having a higher viscosity than the solvent L1. Furthermore, among the high-viscosity solvents exemplified in the first embodiment, it is preferable to use any of the high-viscosity solvents L2 shown in FIG. 7 as the solvent for the solvent vapor G2.

[0163] The solvent vapor G3 is, for example, the vapor of a low surface tension solvent described in the first embodiment, i.e., the vapor of a solvent having a surface tension lower than that of the solvent L1. Furthermore, among the low surface tension solvents exemplified in the first embodiment, it is preferable to use any of the low surface tension solvents L2 shown in FIG. 7 as the solvent for the solvent vapor G3.

[0164] A valve VL1 is provided in the piping on the output side of the supply unit 110-1, and a valve VL2 is provided in the piping on the output side of the supply unit 110-2. The control device 20 controls the supply and stop of the supply of the supply gas G20 to the partial space P1 by opening and closing the valve VL1. The control device 20 also controls the supply and stop of the supply of the supply gas G30 to the partial space P1 by opening and closing the valve VL2. That is, the control device 20 controls the valves VL1 and VL2 to selectively supply either the supply gas G20 or the supply gas G30 to the partial space P1.

[0165] With the above configuration, either the supply gas G20 or the supply gas G30 can be selectively supplied to each of the partial spaces P1 to P4. That is, it is possible to individually select the gas to be supplied to the partial spaces P1 to P4.

[0166] The steps of the substrate processing method (article manufacturing method) of the fourth embodiment follow the flowchart of Figure 4 described in the first embodiment. In the liquid property adjusting step S3, either the supply gas G20 or the supply gas G30 is selectively supplied to each of the plurality of partial spaces P1 to P4. Figures 14A and 14B are explanatory views of the operation of the substrate processing apparatus according to the fourth embodiment.

[0167] For example, in the case of layout A shown in FIG. 12A , as shown in FIG. 14A , a supply gas G20 containing solvent vapor G2 is supplied to the partial spaces P2 and P4 among the plurality of partial spaces P1 to P4, and a supply gas G30 containing solvent vapor G3 is supplied to the partial spaces P1 and P3. That is, the partial spaces P2 and P4 form a space SP1 communicating with the region A1 of the substrate S shown in FIG. 12A , and the partial spaces P1 and P3 form a space SP2 communicating with the region A2 of the substrate S shown in FIG. 12A . That is, the space SP1 faces the region A1 in the Z direction, and the space SP2 faces the region A2 in the Z direction. This allows the solution film F0 on the region A1 facing the partial spaces P2 and P4 to be exposed to the supply gas G20, i.e., the solvent vapor G2, and the solution film F0 on the region A2 facing the partial spaces P1 and P3 to be exposed to the supply gas G30, i.e., the solvent vapor G3.

[0168] 12B , for example, in the case of layout B, as shown in FIG. 14B , a supply gas G20 containing solvent vapor G2 is supplied to the partial spaces P1 and P2 of the plurality of partial spaces P1 to P4, and a supply gas G30 containing solvent vapor G3 is supplied to the partial spaces P3 and P4. That is, the partial spaces P1 and P2 become the space SP1 communicating with the region A1 of the substrate S shown in FIG. 12B , and the partial spaces P3 and P4 become the space SP2 communicating with the region A2 of the substrate S shown in FIG. 12B . That is, the space SP1 faces the region A1 in the Z direction, and the space SP2 faces the region A2 in the Z direction. This allows the solution film F0 on the region A1 facing the partial spaces P1 and P2 to be exposed to the supply gas G20, i.e., the solvent vapor G2, and the solution film F0 on the region A2 facing the partial spaces P3 and P4 to be exposed to the supply gas G30, i.e., the solvent vapor G3.

[0169] In this way, in the liquid property adjustment process S3, either the supply gas G20 or G30 is selectively supplied to each of the multiple partial spaces P1 to P4, so that at least one of the multiple partial spaces P1 to P4 becomes space SP1, and at least one of the multiple partial spaces P1 to P4 becomes space SP2.

[0170] According to the fourth embodiment, the type of gas supplied to each of the partial spaces P1 to P4 can be changed depending on the layout and specifications (size) of the panel, eliminating the need to replace the box 40C when changing the layout. This reduces the effort required for setup changeover.

[0171] In the above explanation, an example was given in which four subspaces P1 to P4 are defined in box 40C, but this is not limited to this, and two subspaces may be defined, three subspaces may be defined, or five or more subspaces may be defined.

[0172] Furthermore, each of the supply devices 110C-1 to 110C-4 is configured to be able to supply vapor of two types of solvent, but this is not limited to this, and by adding a supply unit, it may be configured to be able to supply three or more types of solvent.

[0173] In addition, the fourth embodiment and the modified example of the fourth embodiment may be combined with at least one of the first embodiment, the modified example of the first embodiment, the second embodiment, the modified example of the second embodiment, the third embodiment, and the modified example of the third embodiment.

[0174] [Other Modifications] The present disclosure is not limited to the above-described embodiments, and many modifications of the embodiments are possible within the technical concept of the present disclosure. For example, at least two of the above-described embodiments and modifications may be combined. Furthermore, the effects described in the present embodiment are merely a list of the most preferable effects resulting from the embodiments of the present disclosure, and the effects of the embodiments of the present disclosure are not limited to those described in the present embodiment.

[0175] In the above-described embodiment, the application to the production of displays including organic EL panels has been described, but this is not limited thereto, and the above-described embodiment can also be applied to the production of displays including liquid crystal panels, for example.

[0176] The present disclosure is applicable to the production of displays, including, for example, organic electroluminescence (EL) panels or liquid crystal panels. The present disclosure is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the present disclosure. Therefore, in order to disclose the scope of the present disclosure, the following claims are appended.

[0177] F0...solution film (solution), G2...solvent vapor (vapor of second solvent), L1...solvent (first solvent), L2...solvent (second solvent), S...substrate, 10...substrate processing apparatus, 110...supply unit (gas supply section), 1000...manufacturing system

Claims

1. A substrate processing method comprising a step of exposing a solution containing a liquid of a first solvent placed on a substrate to a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25°C than the first solvent, thereby adjusting the liquid properties of the solution.

2. The substrate processing method according to claim 1, wherein the second solvent has a higher viscosity than the first solvent.

3. The substrate processing method according to claim 1 or 2, wherein the second solvent has a lower surface tension than the first solvent.

4. The substrate processing method according to claim 1, wherein the supply gas contains a surfactant.

5. The substrate processing method according to claim 4, wherein a surface tension of the mixture of the first solvent and the surfactant is lower than a surface tension of the first solvent.

6. The substrate processing method according to claim 4 or 5, wherein the surfactant is a fluorine-based surfactant.

7. The substrate processing method according to claim 1, wherein the supply gas is a mixed gas of the second solvent gas and a carrier gas.

8. The substrate processing method according to claim 7, wherein the mixed gas is generated by a bubbling process in which the carrier gas is supplied to the second solvent in a liquid state.

9. The substrate processing method according to claim 1, wherein the solution is supplied to a recess included in the substrate.

10. A substrate processing method according to any one of claims 1 to 8, wherein the supply gas is a first supply gas, and in a process of adjusting the liquid properties of the solution, the solution disposed in a first region of the substrate is exposed to the first supply gas, and the solution disposed in a second region of the substrate is exposed to a second supply gas containing a third solvent gas having a lower saturated vapor pressure at 25°C than the first solvent.

11. The substrate processing method according to claim 10, wherein the second solvent has a higher viscosity than the first solvent, and the third solvent has a lower surface tension than the first solvent.

12. The substrate processing method according to claim 10 or 11, wherein the solution is supplied to each of a first recess included in the first region and a second recess included in the second region, the second recess being smaller in size than the first recess.

13. A substrate processing method according to any one of claims 10 to 12, wherein a box is positioned above the substrate, the box being open on the side facing the substrate and defining a first space communicating with the first region and a second space communicating with the second region, and in a process of adjusting the liquid properties of the solution, the first supply gas is supplied to the first space and the second supply gas is supplied to the second space.

14. The substrate processing method according to claim 13, wherein a liquid-repellent material is provided at least on the inside of the box.

15. The substrate processing method according to claim 14, wherein the liquid-repellent member has a receding dynamic contact angle with respect to pure water of 90 degrees or more and 120 degrees or less.

16. The substrate processing method according to claim 14, wherein the liquid repellent member is made of a fluororesin.

17. A substrate processing method according to any one of claims 13 to 16, wherein the box includes a partition plate that divides the space facing the substrate into a plurality of subspaces, and in the process of adjusting the liquid properties of the solution, each of the plurality of subspaces is selectively supplied with either the first supply gas or the second supply gas, and at least one of the plurality of subspaces to which the first supply gas is supplied is the first space, and at least one of the plurality of subspaces to which the second supply gas is supplied is the second space.

18. The substrate processing method according to claim 1, wherein the second solvent gas contains a plurality of types of solvent gas.

19. The substrate processing method according to claim 18, wherein the plurality of types of solvent gases include a solvent gas having a higher viscosity than the first solvent and a solvent gas having a lower surface tension than the first solvent.

20. The substrate processing method according to claim 1, wherein the solution further contains at least one solvent different from the first solvent.

21. The substrate processing method according to claim 1, wherein the solution is supplied to the substrate by an inkjet method.

22. The substrate processing method according to any one of claims 1 to 21, further comprising a step of drying the solution, and a step of adjusting the liquid properties of the solution is carried out before the step of drying the solution.

23. A method for manufacturing an article, comprising processing a substrate by the substrate processing method according to any one of claims 1 to 22 to manufacture the article.

24. A substrate processing apparatus comprising: a container into which a substrate having a solution containing a liquid of a first solvent is transported; and a gas supply unit that supplies a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25°C than the first solvent into the container.

25. A system comprising: a substrate processing apparatus according to claim 24; a transport apparatus capable of transporting the substrate; and a drying apparatus to which the substrate, on which the solution processed by the substrate processing apparatus is placed, is transported and which dries the solution.

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