Frame, mask device

Abstract

A frame according to the present invention has a rectangular outline as seen in plan view. When four intersection points at which center lines in the length direction of the sides of the frame intersect are set at the four corners of the frame, the frame is placed on a flat surface, the height Z1 from the flat surface is measured at the four intersection points, first midpoints that are the midpoints of the pairs of intersection points among the four intersection points that are along the same sides of the frame, and second midpoints that are the midpoints of the intersection points and the first midpoints, and the point among the four intersection points, the first midpoints, and the second midpoints at which the height Z1 is lowest is set as a reference point (zero), the difference between the maximum value and the minimum value of the height Z1 of the intersection points is no more than 25 μm.

Description

Frame, mask device

[0001] The present invention relates to a frame and a mask device equipped with the frame. This application claims priority to Japanese Patent Application No. 2023-222999, filed on December 28, 2023, the contents of which are incorporated herein by reference.

[0002] Sputtering is one method for forming multilayer ceramic capacitor (MLCC) electrodes. To form MLCC electrodes using sputtering, a mask made of metal foil with multiple openings is used to form electrodes in a predetermined shape and at a predetermined position. Conventionally, a mask is placed between a target and a dielectric green sheet, and sputtering is performed through the mask to deposit the target metal on the green sheet, forming the MLCC electrode. To achieve a predetermined cross-sectional shape of the MLCC electrode, it is desirable to use a thin, flat mask; however, if the mask is too thin, there is a risk of the mask deforming during use.

[0003] As a deposition mask having a thin precision pattern mask that enables highly accurate patterning, for example, a mask in which a precision pattern mask having a thickness of 20 μm or less and having an arrangement of deposition openings corresponding to the deposition pattern is fixed to a frame having a thickness of 1 mm or more is known (see, for example, Patent Document 1).

[0004] Japanese Patent Application Publication No. 2005-302457

[0005] In Patent Document 1, the thickness of the openings and the thickness of the frame are specified, and flatness (the maximum deviation of flatness from an ideal plane) is described in the examples. Furthermore, a precision mask pattern is formed by electroforming an electroforming matrix with an arrangement of vapor deposition openings corresponding to the vapor deposition pattern, and the precision mask pattern is fixed to a frame. Furthermore, paragraph 0017 of Patent Document 1 states, "The present invention is a method for manufacturing an organic electroluminescent device, characterized in that the above-mentioned vapor deposition mask is used to pattern a thin film layer of the organic electroluminescent device." Therefore, the mask in Patent Document 1 is a vapor deposition mask for an organic electroluminescent device.

[0006] As mentioned above, when the thickness of the mask is reduced, there is a concern that the mask may deform during use. Therefore, it is conceivable to increase the strength of the mask device including the frame and the mask by attaching the mask to a thicker frame. However, when a mask and a frame with different flatnesses are attached to each other, the influence of the flatness inherent to the mask and the flatness inherent to the frame becomes significant, which affects the linearity of the electrode pattern formed by sputtering. In other words, there is a problem that some of the line widths of the electrode pattern become thicker, resulting in variations in the line width of the electrode pattern.

[0007] The present disclosure has been made in consideration of the above circumstances, and aims to provide a frame that can be attached to a mask and that can form, by sputtering, an electrode pattern that has excellent linearity and little variation in line width of the electrode pattern, and a mask device that is equipped with the frame.

[0008] The present disclosure has the following aspects. [1] A frame according to the present disclosure has a rectangular outline in a plan view, and four intersections are set at four corners of the frame where centerlines of the longitudinal directions of each side of the frame intersect. The frame is placed on a flat surface, and heights Z1 from the flat surface are measured at the four intersections, a first midpoint that is the midpoint between two of the four intersections on the same side of the frame, and a second midpoint that is the midpoint between the intersections and the first midpoint. When the point with the smallest height Z1 among the four intersections, the first midpoint, and the second midpoint is set as a reference point (zero), the difference between the maximum and minimum heights Z1 of the intersections is 25 μm or less. [2] The frame according to the present disclosure, in the above [1], may be such that the difference in heights Z1 between two of the four intersections on the same side of the frame is 25 μm or less. [3] The frame according to the present disclosure may be configured as described in [1] or [2] above, wherein the difference between the maximum and minimum values ​​of the height Z1 of the intersection point, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point on the same side of the frame is 25 μm or less. [4] The frame according to the present disclosure may be configured as described in any one of [1] to [3] above, wherein the average value of the heights Z1 of the four intersection points is 16 μm or less. [5] The mask device according to the present disclosure includes the frame according to any one of [1] to [4] above and a mask bonded to one surface of the frame. [6] The mask device according to the present disclosure may be configured as described in [5] above, wherein the mask device is placed on a flat surface so that the mask is in contact with the flat surface, the height Z2 from the flat surface to the mask is measured, and the smallest point among the measured heights is set as a reference point (zero), and the average value of the height Z2 is 35 μm or less. [7] In the mask device according to the present disclosure, in the above [5] or [6], when the mask device is placed on a flat surface so that the mask is in contact with the flat surface and a height Z2 from the flat surface to the mask is measured, the difference between the maximum and minimum values ​​of the height Z2 may be 85 μm or less.[8] In the mask device according to the present disclosure, in any one of [5] to [7] above, at least one of the frame and the mask may be made of a stainless steel alloy, an iron-nickel alloy, or an iron-nickel-cobalt alloy. [9] In the mask device according to the present disclosure, in [8] above, at least one of the frame and the mask may be made of SUS430, Invar, or Super Invar.

[10] In the mask device according to the present disclosure, in [9] above, it may be used for film formation by sputtering.

[11] In the mask device according to the present disclosure, in [9] above, it may be used for forming electrodes of a multilayer ceramic capacitor.

[0009] According to the present disclosure, it is possible to provide a frame that can be attached to a mask and that can form, by sputtering, an electrode pattern that has excellent linearity and little variation in the line width of the electrode pattern, and a mask device that is equipped with the frame.

[0010] 1A is a plan view schematically showing a frame according to an embodiment of the present disclosure; FIG. 1B is a cross-sectional view taken along line A-A in FIG. 1A; FIG. 2A is a cross-sectional view taken along line B-B in FIG. 2A; FIG. 3A is a diagram schematically showing a method for manufacturing a mask device according to an experimental example; FIG. 4A is a diagram schematically showing a method for manufacturing a mask device according to an experimental example; FIG. 5A is a diagram schematically showing a method for manufacturing a mask device according to an experimental example; FIG. 6A is a diagram schematically showing a method for manufacturing a mask device according to an experimental example; FIG. 7A is a diagram schematically showing a method for manufacturing a mask device according to an experimental example; FIG. 8A is a diagram showing a measurement position for the height of a frame according to an experimental example;

[0011] [Frame] A frame according to one embodiment of the present disclosure is a frame having a rectangular outer shape in a plan view, and four intersections where center lines in the longitudinal directions of each side of the frame intersect are set at four corners of the frame, and the frame is placed on a flat surface, and heights Z1 from the flat surface are measured at the four intersections, a first intermediate point that is the midpoint between two of the four intersections that are on the same side of the frame, and a second intermediate point that is the midpoint between the intersections and the first intermediate point, and when the point with the smallest height Z1 among the four intersections, the first intermediate point, and the second intermediate point is set as a reference point (zero), the difference between the height Z1 at the reference point and the maximum and minimum values ​​of the heights Z1 at the intersections other than the reference point is 25 μm or less.

[0012] A frame according to an embodiment of the present disclosure will be described in detail below with reference to FIGS. 1A and 1B. FIGS. 1A and 1B are schematic diagrams illustrating a frame according to this embodiment, with FIG. 1A being a plan view and FIG. 1B being a cross-sectional view taken along line A-A in FIG. 1A. As shown in FIGS. 1A and 1B, the frame 1 according to this embodiment is a frame having a rectangular outer shape in plan view. That is, the frame 1 according to this embodiment is a frame body having four sides 2A, 2B, 2C, and 2D that intersect at right angles with one another, and has an opening 1a that is rectangular in plan view and surrounded by the four sides 2A, 2B, 2C, and 2D. The four sides 2A, 2B, 2C, and 2D are strip-shaped portions having a predetermined width. In the frame 1 of this embodiment, four intersections 4A, 4B, 4C, and 4D are set at four corners 1A, 1B, 1C, and 1D of the frame 1, where center lines 3A, 3B, 3C, and 3D in the longitudinal directions of four sides 2A, 2B, 2C, and 2D of the frame 1 intersect with each other. That is, the intersection of center line 3A and center line 3D is intersection 4A, the intersection of center line 3A and center line 3B is intersection 4B, the intersection of center line 3B and center line 3C is intersection 4C, and the intersection of center line 3C and center line 3D is intersection 4D.

[0013] In the frame 1 of this embodiment, of the four intersections 4A, 4B, 4C, and 4D, the midpoints between two intersections on the same side are defined as first midpoints 5A, 5B, 5C, and 5D. That is, the midpoint between the two intersections 4A and 4B on side 2A is defined as the first midpoint 5A, the midpoint between the two intersections 4B and 4C on side 2B is defined as the first midpoint 5B, the midpoint between the two intersections 4C and 4D on side 2C is defined as the first midpoint 5C, and the midpoint between the two intersections 4D and 4A on side 2D is defined as the first midpoint 5D.

[0014] In the frame 1 of this embodiment, the intermediate points between any one of the four intersection points 4A, 4B, 4C, and 4D and any one of the first intermediate points 5A, 5B, 5C, and 5D are defined as second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, and 6H. That is, the midpoint between intersection 4A and the first midpoint 5A is the second midpoint 6A, the midpoint between intersection 4B and the first midpoint 5A is the second midpoint 6B, the midpoint between intersection 4B and the first midpoint 5B is the second midpoint 6C, the midpoint between intersection 4C and the first midpoint 5B is the second midpoint 6D, the midpoint between intersection 4C and the first midpoint 5C is the second midpoint 6E, the midpoint between intersection 4D and the first midpoint 5C is the second midpoint 6F, the midpoint between intersection 4D and the first midpoint 5D is the second midpoint 6G, and the midpoint between intersection 4A and the first midpoint 5D is the second midpoint 6H.

[0015] In the frame 1 of this embodiment, as shown in Figure 1B, the frame 1 is placed on a flat surface 100, and the height from the flat surface 100 at the intersections 4A, 4B, 4C, and 4D, the first intermediate points 5A, 5B, 5C, and 5D, and the second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, and 6H is Z1.

[0016] In the frame 1 of this embodiment, when the point with the smallest height Z1 among the intersections 4A, 4B, 4C, and 4D, the first intermediate points 5A, 5B, 5C, and 5D, and the second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, and 6H is set as the reference point (zero), the difference between the maximum and minimum heights Z1 of the reference point and the other intersections 4A, 4B, 4C, and 4D is 25 μm or less. The difference in height Z1 is preferably 23 μm or less, and more preferably 12 μm or less. If the difference in height Z1 exceeds 25 μm, the flatness of the frame deteriorates, and therefore, when the frame is used in a sputtering mask device, it is not possible to form an electrode pattern with excellent linearity and minimal line width variation.

[0017] In the frame 1 of this embodiment, the difference in height Z1 between two of the four intersections 4A, 4B, 4C, and 4D on the same side is preferably 25 μm or less, more preferably 20 μm or less, and even more preferably 11 μm or less. When the difference in height Z1 is 25 μm or less, the frame has excellent flatness, and when the frame is used in a sputtering mask device, an electrode pattern with excellent linearity and little variation in line width can be formed. Note that the two intersections on the same side are intersections 4A and 4B on side 2A, intersections 4B and 4C on side 2B, intersections 4C and 4D on side 2C, and intersections 4D and 4A on side 2D.

[0018] In the frame 1 of this embodiment, the difference between the maximum and minimum heights Z1 of the intersections 4A, 4B, 4C, and 4D, the first intermediate points 5A, 5B, 5C, and 5D, and the second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, and 6H on the same side is preferably 25 μm or less, more preferably 20 μm or less, and even more preferably 18 μm or less. When the difference between the maximum and minimum heights Z1 is 25 μm or less, the frame has excellent flatness. Therefore, when the frame is used in a sputtering mask device, an electrode pattern with excellent linearity and little variation in line width can be formed. Furthermore, on the side 2A, the difference between the maximum and minimum heights Z1 of the intersections 4A, 4B, the first intermediate point 5A, and the second intermediate points 6A and 6B is preferably 25 μm or less. On side 2B, the difference between the maximum and minimum values ​​of height Z1 at intersections 4B, 4C, first intermediate point 5B, and second intermediate points 6C, 6D is preferably 25 μm or less. On side 2C, the difference between the maximum and minimum values ​​of height Z1 at intersections 4C, 4D, first intermediate point 5C, and second intermediate points 6E, 6F is preferably 25 μm or less. On side 2D, the difference between the maximum and minimum values ​​of height Z1 at intersections 4D, 4A, first intermediate point 5D, and second intermediate points 6G, 6H is preferably 25 μm or less.

[0019] In the frame 1 of this embodiment, the average value of height Z1 of the four intersections 4A, 4B, 4C, and 4D is preferably 16 μm or less, more preferably 12 μm or less, and even more preferably 10 μm or less. When the average value of height Z1 is 16 μm or less, the frame has excellent flatness, and therefore, when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity and little variation in line width of the electrode pattern can be formed.

[0020] In the frame 1 of this embodiment, the height Z1 can be measured using, for example, a CNC image measuring device.

[0021] The frame 1 of this embodiment preferably has an outer size of 300 mm × 300 mm to 800 mm × 800 mm, more preferably 400 mm × 400 mm to 700 mm × 700 mm, and even more preferably 500 mm × 500 mm to 600 mm × 600 mm. When the outer size is within this range, the frame has excellent flatness, and therefore, when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity and little variation in line width of the electrode pattern can be formed.

[0022] In the frame 1 of this embodiment, the widths of the sides 2A, 2B, 2C, and 2D are preferably 15 mm to 60 mm, more preferably 20 mm to 50 mm, and even more preferably 30 mm to 40 mm. When the widths of the sides 2A, 2B, 2C, and 2D are within the above ranges, the frame has excellent flatness, and therefore, when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity and little variation in line width of the electrode pattern can be formed.

[0023] The frame 1 of this embodiment preferably has a thickness of 0.5 mm to 3.0 mm, more preferably 0.7 mm to 2.0 mm, and even more preferably 1.0 mm to 1.5 mm. When the thickness is within this range, the frame has excellent flatness, and when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity and little variation in line width of the electrode pattern can be formed.

[0024] The frame 1 is formed of a metal material. Examples of metal materials include stainless steel alloys, iron-nickel alloys, and iron-nickel-cobalt alloys. Examples of stainless steel alloys include SUS430 and SUS304. While SUS304 is not magnetic, SUS430 is ferromagnetic, making it easy to secure the frame to the equipment, which is preferable when performing sputtering. Examples of iron-nickel alloys include Invar. Examples of iron-nickel-cobalt alloys include Super Invar. Both Invar and Super Invar are ferromagnetic, making it easy to secure the frame to the equipment, which is preferable when performing sputtering, and their small linear expansion coefficients allow for high dimensional precision to be maintained even when exposed to high temperatures.

[0025] 1A and 1B illustrate an example in which the frame 1 of this embodiment has a rectangular opening 1a in a plan view, but the frame 1 of this embodiment is not limited to this. The frame 1 of this embodiment may have two reinforcing portions (cross bars) arranged orthogonally (cross-shaped) within the opening 1a, or may have reinforcing portions (braces) arranged across two adjacent sides of the four sides 2A, 2B, 2C, and 2D at positions corresponding to the four corners 1A, 1B, 1C, and 1D within the opening 1a. By having such reinforcing portions, the strength of the frame 1 can be improved.

[0026] [Method of Manufacturing Frame] The frame of this embodiment can be manufactured, for example, by processing a metal plate or metal foil made of the above-mentioned metal material into a predetermined shape by laser processing.

[0027] The frame 1 of this embodiment is placed on a flat surface 100, and a height Z1 from the flat surface 100 is measured at four intersections 4A, 4B, 4C, 4D, first intermediate points 5A, 5B, 5C, 5D which are intermediate points between two of the four intersections 4A, 4B, 4C, 4D that are on the same side, and second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H which are intermediate points between the four intersections 4A, 4B, 4C, 4D and the first intermediate points 5A, 5B, 5C, 5D. If the point with the smallest height Z1 among the first intermediate points 5A, 5B, 5C, 5D and the second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H is taken as the reference point (zero), the difference between the maximum and minimum values ​​of the height Z1 of the reference point and the height Z1 of the intersection points 4A, 4B, 4C, 4D other than the reference point is 25 μm or less, and therefore an electrode pattern with excellent flatness and excellent linearity with little variation in the line width of the electrode pattern can be formed when used in a mask device for sputtering.

[0028] [Mask Device] A mask device according to an embodiment of the present disclosure includes the frame of the above-described embodiment and a mask attached to one surface of the frame.

[0029] A mask device according to an embodiment of the present disclosure will be described in detail below with reference to FIGS. 2A and 2B. FIGS. 2A and 2B are schematic diagrams illustrating the mask device of this embodiment. FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view taken along line B-B in FIG. 2A. As shown in FIGS. 2A and 2B, the mask device 10 of this embodiment includes the frame 1 of the above-described embodiment and a mask 11 bonded to one surface 1b of the frame. In other words, as shown in FIG. 2B, the frame 1 is bonded to the edge of one surface 11a of the mask 11, and the opening 1a of the frame 1 is covered by the mask 11.

[0030] The mask 11 is made of a metal plate or metal foil having a rectangular shape in a plan view. The mask 11 has, for example, a large number of opening rows 13 each consisting of a large number of openings 12 extending in the length direction of the mask 11. The opening rows 13 are, for example, spaced apart from one another in the width direction of the mask 11. The openings 12 penetrate the mask 11 in the thickness direction.

[0031] In the mask 11, four intersections 16A, 16B, 16C, and 16D are set at the four corners 11A, 11B, 11C, and 11D of an area α covering the opening 1a of the frame 1, where center lines 15A, 15B, 15C, and 15D in the longitudinal directions of four edge portions 14A, 14B, 14C, and 14D of the area α intersect. That is, the intersection of center line 15A and center line 15D is defined as intersection 16A, the intersection of center line 15A and center line 15B is defined as intersection 16B, the intersection of center line 15B and center line 15C is defined as intersection 16C, and the intersection of center line 15C and center line 15D is defined as intersection 16D.

[0032] In the mask 11, the midpoint between the two intersections 16A and 16B on the edge 14A is defined as a first midpoint 17A, and the midpoint between the two intersections 16C and 16D on the edge 14C is defined as a first midpoint 17B. In addition, in the mask 11, the midpoint between the intersection 16A and the first midpoint 17A is defined as a second midpoint 18A, the midpoint between the intersection 16B and the first midpoint 17A is defined as a second midpoint 18B, the midpoint between the intersection 16C and the first midpoint 17B is defined as a second midpoint 18C, and the midpoint between the intersection 16D and the first midpoint 17B is defined as a second midpoint 18D.

[0033] The mask 11 has two points 19A and 19B spaced equally apart between two intersections 16B and 16C on the edge 14B, and two points 19C and 19D spaced equally apart between two intersections 16D and 16A on the edge 14D. The mask 11 also has two points 19E and 19F spaced equally apart along the length of the mask 11 between the second midpoint 18A and the second midpoint 18D, two points 19G and 19H spaced equally apart along the length of the mask 11 between the first midpoint 17A and the first midpoint 17B, and two points 19I and 19J spaced equally apart along the length of the mask 11 between the second midpoint 18B and the second midpoint 18C. The points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, and 19J are provided in portions of the region α where no opening 12 is provided.

[0034] In the mask device 10 of this embodiment, when the mask device 10 is placed on the flat surface 100 so that the mask 11 is in contact with the flat surface 100 and the height Z2 from the flat surface 100 to the mask 11 is measured, the average value of the height Z2 is preferably 35 μm or less, more preferably 30 μm or less, and even more preferably 29 μm or less. If the average value of the height Z2 is 40 μm or less, the mask has excellent flatness, and therefore an electrode pattern with excellent linearity and little variation in line width of the electrode pattern can be formed. The measurement points for the height Z2 are the intersections 16A, 16B, 16C, and 16D, the first intermediate points 17A and 17B, the second intermediate points 18A, 18B, 18C, and 18D, and the points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, and 19J.

[0035] In the mask device 10 of this embodiment, when the mask device 10 is placed on the flat surface 100 so that the mask 11 is in contact with the flat surface 100 and the height Z2 from the flat surface 100 to the mask 11 is measured, the difference between the maximum and minimum values ​​of the height Z2 is preferably 85 μm or less, more preferably 80 μm or less, and even more preferably 61 μm or less. When the difference between the maximum and minimum values ​​of the height Z2 is 85 μm or less, the mask has excellent flatness, and therefore an electrode pattern with excellent linearity and little variation in line width of the electrode pattern can be formed. The measurement points for the height Z2 are the intersections 16A, 16B, 16C, and 16D, the first intermediate points 17A and 17B, the second intermediate points 18A, 18B, 18C, and 18D, and the points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, and 19J.

[0036] In the mask device 10 of this embodiment, the height Z2 can be measured using a CNC image measuring device.

[0037] The mask 11 preferably has an outer size of 290 mm × 290 mm to 790 mm × 790 mm, more preferably 390 mm × 390 mm to 690 mm × 690 mm, and even more preferably 490 mm × 490 mm to 590 mm × 590 mm. When the outer size is within this range, the mask has excellent flatness, and therefore when used in a mask device for sputtering, an electrode pattern with excellent linearity and little variation in line width of the electrode pattern can be formed.

[0038] The thickness of the mask 11 is preferably 10 μm to 50 μm, more preferably 15 μm to 40 μm, and even more preferably 20 μm to 30 μm. When the thickness is within this range, the mask has excellent flatness, and when used in a mask device for sputtering, an electrode pattern with excellent linearity and little variation in line width of the electrode pattern can be formed.

[0039] The frame 1 and the mask 11 are made of metal materials. Examples of metal materials include stainless steel alloys, iron-nickel alloys, and iron-nickel-cobalt alloys. Examples of stainless steel alloys include SUS430 and SUS304. Examples of iron-nickel alloys include Invar. Examples of iron-nickel-cobalt alloys include Super Invar. At least one of the frame 1 and the mask 11 is preferably made of a stainless steel alloy, an iron-nickel alloy, or an iron-nickel-cobalt alloy. When sputtering a dielectric green sheet, if the mask device 10 consisting of the frame 1 and the mask 11 is attached to the green sheet with a magnet, it is preferable that at least one of the frame 1 and the mask 11 be made of SUS430, Invar, or Super Invar. To prevent deformation due to thermal history, the frame 1 and the mask 11 are preferably made of the same material. If the thermal load is small, the frame 1 and the mask 11 do not necessarily need to be made of the same material, but it is preferable in terms of strength that at least one of the frame 1 and the mask 11 be made of the above-mentioned material.

[0040] The mask device 10 of this embodiment has excellent flatness and is therefore suitable for use in film formation by sputtering, particularly for forming electrodes of multilayer ceramic capacitors.

[0041] [Mask Manufacturing Method] The mask of this embodiment can be manufactured, for example, by applying resist patterning to a metal plate or metal foil made of the above-mentioned metal material and then etching with an acid solution. Resist patterning may be performed on one side of the metal plate or metal foil, or on both sides of the metal plate or metal foil. In order to obtain a desired cross-sectional shape of the mask, one side or both sides of the metal plate or metal foil may be used. After the etching process, the resist is removed to obtain the mask.

[0042] [Mask Device Manufacturing Method] The mask device of this embodiment is obtained, for example, by bonding a frame obtained by the frame manufacturing method described above to the edge of one side of a mask obtained by the mask manufacturing method described above.

[0043] The mask device 10 of this embodiment includes the frame 1 of the above-described embodiment and a mask 11 bonded to one surface 1b of the frame 1. This allows for the formation of an electrode pattern with excellent flatness of the mask 11 and linearity with little variation in line width. The flatness of the mask device 10 is easily affected by the rolling conditions during metal foil production, the laser processing conditions during frame production, the bonding conditions between the mask 11 and the frame 1, and the operating conditions. The smaller the flatness value of the mask device 10, the more likely it is that the sputtered sheet (green sheet) and the mask 11 will adhere closely to each other. The larger the flatness value, the more likely it is that there will be weak contact between the sputtered sheet (green sheet) and the mask 11. Furthermore, the flatness of the frame 1, in particular, also plays a role in correcting the flatness of the mask 11.

[0044] The present disclosure will be described in more detail below using experimental examples, but the present disclosure is not limited to the following experimental examples.

[0045] [Frame Manufacturing] This example shows the case where SUS430 was used as the metal material for the frame. A 200 mm thick slab composed of an iron-chromium alloy containing 16% by mass to 18% by mass of chromium and the remainder iron was prepared by continuous casting. Next, the slab was hot forged to produce a steel billet. The steel billet was then hot rolled to a thickness of 5 mm to obtain a hot-rolled material. Subsequently, cold rolling and annealing were alternately performed twice each to obtain a rolled material with a thickness of 1 mm. In this case, the reduction ratio in the first cold rolling was set to 60%, and the reduction ratio in the second cold rolling was set to 50%. Thus, the total reduction ratio of the rolled material after the two cold rollings on the hot-rolled material before cold rolling was set to 80%. The rolled material was then subjected to tension annealing. At this time, the annealing temperature of the rolled material in the tension annealing was set to 850 ° C, and the holding time was set to 5 seconds. As a result, a frame substrate with a thickness of 1 mm was obtained. The obtained frame substrate was subjected to laser processing to obtain a frame as shown in Figures 1A and 1B, which has a rectangular outer shape in plan view, an outer size of 500 mm x 500 mm, and four side widths of 35 mm.

[0046] [Mask Manufacturing] A 200 mm thick slab composed of an iron-chromium alloy containing 16% by mass or more and 18% by mass or less of chromium and the remainder iron was prepared as the metal material for the mask by continuous casting. The slab was then hot forged to produce a steel billet. The steel billet was then hot rolled to a thickness of 40 mm to obtain a hot-rolled material. Subsequently, cold rolling and annealing were alternately performed twice to obtain a rolled material with a thickness of 50 μm. The reduction ratio in the first cold rolling was set to 68.75%, and the reduction ratio in the second cold rolling was set to 60%. Thus, the total reduction ratio of the rolled material after the two cold rollings on the hot-rolled material before cold rolling was set to 87.5%. The rolled material was then subjected to tension annealing. In this case, the annealing temperature of the rolled material during tension annealing was set to 850°C, and the holding time was set to 4 seconds. This resulted in a mask substrate with a thickness of 50 μm. The resulting mask substrate was subjected to resist patterning and etched with an acid solution to obtain a mask with an outer size of 500 mm × 500 mm, as shown in FIGS. 2A and 2B. The resulting mask had numerous rows of openings each consisting of a large number of openings, with the openings measuring 180 μm × 250 μm.

[0047] [Manufacturing of Mask Device] A mask device was manufactured by resistance welding a frame and a mask according to the following procedure. FIGS. 3 to 8 are schematic diagrams illustrating the manufacturing method of the mask device. As shown in FIG. 3 , a Teflon (registered trademark) gauze 22 used in screen printing was attached to one surface 21 a of an aluminum frame 21. Next, as shown in FIG. 4 , only the edge of the mask 11 was attached to one surface 22 a of the gauze 22 attached to one surface 21 a of the aluminum frame 21 using an adhesive (product name: Bond G17, manufactured by Konishi Co., Ltd.). Next, as shown in FIG. 5 , the gauze 22 was cut along a center line extending in one direction on one surface 22 a of the gauze 22, and the tension applied to the gauze 22 was transferred to the mask 11. Next, as shown in Fig. 6, while tension was applied to the mask 11, a frame 1 was placed on one surface 11a of the mask 11, and a glass mask 23 was placed so as to surround the outer periphery of the mask 11. The mask 11 was then positioned relative to the frame 1, and the pitch (the pitch of the multiple openings arranged in the mask) was adjusted. To adjust the position and pitch of the mask 11, a gauze 22 was pressed. Next, as shown in Fig. 7, the mask 11 was bonded to one surface 1b of the frame 1 by resistance welding. Next, as shown in Fig. 8, the unnecessary portion of the mask 11 (the portion protruding from the frame 1) was cut off, thereby obtaining the mask device 10.

[0048] [Formation of a film by sputtering] The mask device obtained as described above was attached to the barium titanate surface of a PET (polyethylene terephthalate) sheet whose surface was coated with barium titanate, and a nickel film pattern was formed using a sputtering device under the conditions shown in Table 1.

[0049]

[0050] [Measurement of Frame Flatness] A CNC image measuring instrument (product name: NEXIV VMR-12072, manufactured by Nikon Corporation) was used to measure the frame flatness. The frame was placed on the stage of the CNC image measuring instrument, and four intersections were set at the four corners of the frame, where the center lines of the longitudinal directions of each side of the frame intersected. The frame was then placed on a flat surface, and the heights from the stage were measured at the four intersections, a first midpoint, which was the midpoint between two of the four intersections on the same side of the frame, and a second midpoint, which was the midpoint between the intersection and the first midpoint. The flatness was calculated using the point with the smallest height among the four intersections, the first midpoint, and the second midpoint as the reference point. The height measurement positions were designated as measurement positions 1 to 16 shown in Figure 9. The heights were also measured for four frames. Measurement positions 1 to 16 were set at equal intervals. The results are shown in Table 2.

[0051]

[0052] As shown in Table 2, for Sample 1, the height at position 12 shown in Figure 9 was a reference point with a minimum value of 0 μm, and the maximum difference between the height of this reference point and the heights of other positions was 23 μm. For Sample 2, the height at position 16 shown in Figure 9 was a reference point with a minimum value of 0 μm, and the maximum difference between the height of this reference point and the heights of other positions was 30 μm. For Sample 3, the height at position 8 shown in Figure 9 was a reference point with a minimum value of 0 μm, and the maximum difference between the height of this reference point and the heights of other positions was 19 μm. For Sample 4, the height at position 16 shown in Figure 9 was a reference point with a minimum value of 0 μm, and the maximum difference between the height of this reference point and the heights of other positions was 39 μm. Note that the parentheses following the measurement position numbers in Table 2 indicate the symbols of the corresponding positions in Figure 1A. The four intersections were positions 1, 5, 12, and 16 shown in Figure 9, and the differences between the maximum and minimum heights at these four intersections are summarized in Table 3.

[0053]

[0054] As shown in Table 3, for sample 1, the maximum difference between the height of the reference point and the height of other positions was 23 μm, for sample 2, the maximum difference between the height of the reference point and the height of other positions was 25 μm, for sample 3, the maximum difference between the height of the reference point and the height of other positions was 12 μm, and for sample 4, the maximum difference between the height of the reference point and the height of other positions was 39 μm.

[0055] In addition, the difference in height between the two positions 1 on the side including positions 1 and 5 shown in Figure 9 and the height of position 5, the difference in height between the two positions 1 on the side including positions 1 and 12 shown in Figure 9 and the height of position 12, the difference in height between the two positions 5 on the side including positions 5 and 16 shown in Figure 9 and the height of position 16, and the difference in height between the two positions 12 on the side including positions 12 and 16 shown in Figure 9 were calculated. The results are shown in Table 4.

[0056]

[0057] As shown in Table 4, the maximum difference in height between the measurement positions for sample 1 was 20 μm, the maximum difference in height between the measurement positions for sample 2 was 25 μm, the maximum difference in height between the measurement positions for sample 3 was 11 μm, and the maximum difference in height between the measurement positions for sample 4 was 33 μm.

[0058] In addition, the following were calculated: the difference between the height of position 1 and position 5 on the side including positions 1-5 shown in FIG. 9 and the maximum and minimum values ​​of the heights of positions 2, 3, and 4; the difference between the height of position 1 and position 12 on the side including positions 1-12 shown in FIG. 9 and the maximum and minimum values ​​of the heights of positions 6, 8, and 10; the difference between the height of position 5 and position 16 on the side including positions 5-16 shown in FIG. 9 and the maximum and minimum values ​​of the heights of positions 7, 9, and 11; and the difference between the height of position 12 and position 16 on the side including positions 12-16 shown in FIG. 9 and the maximum and minimum values ​​of the heights of positions 13, 14, and 15. Table 5 shows the maximum value of the difference between the maximum and minimum values ​​of the height Z1 of the intersection point, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point, which are on the same side of the frame.

[0059]

[0060] As shown in Table 5, in sample 1, the maximum difference between the maximum and minimum values ​​of the intersection height Z1, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point, which are located on the same side of the frame, was 20 μm; in sample 2, the maximum difference between the maximum and minimum values ​​of the intersection height Z1, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point, which are located on the same side of the frame, was 25 μm; in sample 3, the maximum difference between the maximum and minimum values ​​of the intersection height Z1, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point, which are located on the same side of the frame, was 18 μm; and in sample 4, the maximum difference between the maximum and minimum values ​​of the intersection height Z1, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point, which are located on the same side of the frame, was 33 μm.

[0061] The average heights of positions 1, 5, 12, and 16 shown in Fig. 9 were calculated. The results are shown in Table 6.

[0062]

[0063] As shown in Table 6, the average height of the measurement position for sample 1 was 12 μm, the average height of the measurement position for sample 2 was 16 μm, the average height of the measurement position for sample 3 was 10 μm, and the average height of the measurement position for sample 4 was 17 μm.

[0064] [Measurement of Flatness of Mask Device] The flatness of the mask device was measured using a CNC image measuring device (trade name: NEXIV VMR-12072, manufactured by Nikon Corporation). The mask device was placed so that the mask was in contact with the stage of the CNC image measuring instrument, and 20 points shown in FIG. 2 (in a plan view from the frame 1 side, intersections 16A, 16B, 16C, 16D of lines connecting four unopened points at the four corners of the mask 11 in the vertical and horizontal directions, first horizontal midpoints 17A, 17B, second midpoints 18A, 18B, 18C, 18D which are midpoints between the first midpoints, points 19A, 19B, 19C, 19D which divide the vertical side into thirds, and points 19E, 19F, 19G, 19H, 19I, 19J within the plane of the mask 1) were used as measurement positions in the area of ​​the mask that covers the opening of the frame, and height Z2 from the stage was measured at each measurement position. 19E, 19F, 19G, 19H, 19I, and 19J on the surface of mask 1 are the intersections of lines parallel to each side connecting the opposing first midpoint, second midpoint, and points dividing the vertical side into thirds. None of these are open areas. The smallest point among the obtained heights was used as the reference point (zero) to calculate the flatness. The results are shown in Table 7.

[0065]

[0066] As shown in Table 7, the average height of the measurement position was 30 μm for Sample 1, 29 μm for Sample 2, 35 μm for Sample 3, and 45 μm for Sample 4. Note that the symbol for the corresponding position in Figure 2 is given in parentheses after the measurement position number in Table 7.

[0067] In addition, the mask device was placed so that the mask was in contact with the stage of the CNC image measuring instrument, and 20 points shown in Figure 2 (intersections 16A, 16B, 16C, and 16D, first intermediate points 17A and 17B, second intermediate points 18A, 18B, 18C, and 18D, and points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, and 19J) were used as measurement positions in the area of ​​the mask covering the opening of the frame, and the height from the stage was measured at each measurement position.The maximum and minimum values ​​of the height were calculated from the results shown in Table 7. The results are shown in Table 8.

[0068]

[0069] As shown in Table 8, the difference between the maximum and minimum height values ​​at the measurement position for sample 1 was 80 μm, the difference between the maximum and minimum height values ​​at the measurement position for sample 2 was 85 μm, the difference between the maximum and minimum height values ​​at the measurement position for sample 3 was 61 μm, and the difference between the maximum and minimum height values ​​at the measurement position for sample 4 was 135 μm.

[0070] [Pattern Evaluation] The line width of a nickel film pattern formed using a sputtering apparatus was measured at 25 points each at the four corners and the center of each sample. The dimension in the width direction (180 μm) near the center of each 180 μm × 250 μm pattern was measured. A CNC image measuring device (trade name: NEXIV VMR-12072, manufactured by Nikon Corporation) was used to measure the width direction dimension near the center of each pattern. The patterning characteristics were evaluated based on the difference between the maximum and minimum width direction dimensions near the center of each pattern. The results are shown in Table 9. A difference between the maximum and minimum values ​​was rated as "Excellent" (Excellent), a difference between the maximum and minimum values ​​was 10 μm or less, a difference between the maximum and minimum values ​​was 15 μm or less, and a difference between the maximum and minimum values ​​was rated as "Bad" (Bad).

[0071]

[0072] If the evaluation is "Excellent" or "Good," there is no effect on the characteristics of the capacitor when several hundred layers of nickel films are stacked. However, if the evaluation is "Bad," defects such as variations in capacitor capacitance and leakage during stacking are likely to occur. The reason for the larger pattern dimensions is thought to be that the deposition material wraps around when the adhesion between the mask and the deposition object is weak. This is thought to be because when the mask is highly flat, the adhesion strength varies within the surface.

[0073] According to the present disclosure, it is possible to provide a frame that can be attached to a mask and that can form, by sputtering, an electrode pattern that has excellent linearity and little variation in the line width of the electrode pattern, and a mask device that is equipped with the frame.

[0074] 1 Frame 1A,1B,1C,1D Corner 2A,2B,2C,2D Edge 3A,3B,3C,3D Centerline 4A,4B,4C,4D Intersection 5A,5B,5C,5D First midpoint 6A,6B,6C,6D,6E,6F,6G,6H Second midpoint 10 Mask device 11 Mask 11A,11B,11C,11D Corner 12 Opening 13 Opening row 14A,14B,14C,14D Edge 15A,15B,15C,15D Centerline 16A,16B,1​​6C,16D Intersection 17A,17B First midpoint 18A,18B,18C,18D The second midpoint is 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, 19J

Claims

1. A frame having a rectangular outer shape in a plan view. At four corners of the frame, four intersection points where center lines in the length direction of each side portion of the frame intersect with each other are set. The frame is placed on a flat surface, and the height Z1 from the flat surface is measured at the four intersection points, a first intermediate point which is an intermediate point between two intersection points on the same side portion of the frame among the four intersection points, and a second intermediate point which is an intermediate point between the intersection point and the first intermediate point. When the point with the smallest height Z1 among the four intersection points, the first intermediate point, and the second intermediate point is taken as a reference point (zero), the difference between the maximum value and the minimum value of the height Z1 of the intersection points is 25 μm or less. Frame.

2. The frame according to claim 1, wherein the difference in height Z1 between two intersection points on the same side portion of the frame among the four intersection points is 25 μm or less.

3. The frame according to claim 1, wherein the difference between the maximum value and the minimum value of the height Z1 of the intersection points, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point on the same side portion of the frame is 25 μm or less.

4. The frame according to claim 1, wherein the average value of the height Z1 of the four intersection points is 16 μm or less.

5. A mask device comprising the frame according to any one of claims 1 to 4 and a mask bonded to one surface of the frame.

6. The mask device according to claim 5, wherein the mask device is placed on the flat surface such that the mask is in contact with the flat surface, the height Z2 from the flat surface to the mask is measured, and when the point with the minimum height among the obtained heights is taken as a reference point (zero), the average value of the height Z2 is 35 μm or less.

7. The mask device according to claim 5, wherein the mask device is placed on the flat surface such that the mask is in contact with the flat surface, the height Z2 from the flat surface to the mask is measured, and the difference between the maximum value and the minimum value of the height Z2 is 100 μm or less.

8. The mask device according to claim 5, wherein at least one of the frame and the mask is made of a stainless alloy, an iron-nickel alloy, or an iron-nickel-cobalt alloy.

9. The mask device according to claim 8, wherein at least one of the frame and the mask is made of SUS430, Invar, or Super Invar.

10. The mask device according to claim 9, which is used for film formation by sputtering.

11. The mask device according to claim 9, which is used for forming an electrode of a multilayer ceramic capacitor.

Images