Spectrum chip

Abstract

A spectrum chip, comprising a light sensing area. The light sensing area consists of a photoelectric detection layer (110) and a light modulation layer located above the photoelectric detection layer, wherein the light modulation layer comprises a plurality of filter units (142, 152) formed by different types of filter materials, the different types of filter materials have different transmissivity curves, the different types of filter materials are arranged in an array of the filter units, and in the array of the filter units, filter units that are not easy to shape are not adjacent, so that the limitation on production processes of spectrum chips is overcome.

Description

Spectral chip Technical Field

[0001] The present application relates to the field of spectral technology, and more specifically, to a spectral chip. Background Art

[0002] Interactions between light and matter, such as absorption, scattering, fluorescence, and Raman spectroscopy, produce a unique spectrum, unique to each substance. Therefore, spectral information can be considered the "fingerprint" of all things. Spectrometers can directly detect the spectral information of a substance, revealing the presence and composition of the target. They are crucial testing instruments in fields such as material characterization and chemical analysis. Based on technological developments, micro-spectrometers can be categorized into four types: dispersion, narrowband filtering, Fourier transform, and computational reconstruction.

[0003] The spectral chip of the spectrometer is used to receive and modulate incident light, and output the spectral information of the incident light based on the modulated incident light. Its light modulation effect is critical to improving the overall performance of the spectrometer.

[0004] Therefore, it is desirable to provide a spectrum chip solution with improved light modulation effect. Summary of the Invention

[0005] The embodiment of the present application provides a spectral chip, which overcomes the production process limitations of the spectral chip by arranging different types of filter materials in an array and preventing filter units that are difficult to form from being adjacent to each other.

[0006] According to one aspect of the present application, a spectral chip is provided, comprising: a light sensing area, the light sensing area being composed of a photodetection layer and a light modulation layer located above the photodetection layer, wherein the light modulation layer comprises a plurality of filter units formed by different types of filter materials, the different types of filter materials having different transmittance curves, the different types of filter materials being arranged in a filter unit array, and in the filter unit array, filter units that are difficult to form are not adjacent.

[0007] In the above-mentioned spectral chip, in the array, the easily moldable filter units are first formed, and then the difficult-to-moldify filter units are formed by filling the easily moldable filter units in a non-adjacent manner.

[0008] In the above-mentioned spectral chip, one filter material corresponds to one filter unit, one filter material corresponds to one or more physical pixels, and at least one filter unit corresponds to one spectral pixel.

[0009] In the above-mentioned spectrum chip, the thickness of the filter material is 0.5um to 2um.

[0010] In the above-mentioned spectrum chip, the thickness of each filter material is the same, or the thicknesses of the multiple filter materials are different according to different transmittance curves.

[0011] In the above-mentioned spectral chip, the transmission spectrum curves of the different types of filter materials have peak values ​​near 450 nm, near 475 nm, near 550 nm, near 685 nm and in the infrared band.

[0012] In the above-mentioned spectral chip, the different types of filter materials include the array composed of periodically arranged units, and the units include n×n square units, linear units or rectangular units.

[0013] In the above-mentioned spectral chip, the array is a single layer, or the array partially includes two or more superimposed layers.

[0014] The above-mentioned spectral chip further includes: a microlens layer, which is arranged on the light modulation layer.

[0015] In the above-mentioned spectral chip, the microlens layer and the light modulation layer are aligned with the pixels of the photodetection layer; or, the microlens layer and the light modulation layer shrink toward the array center of the pixels of the photodetection layer to form a misalignment with the pixels of the photodetection layer.

[0016] In the above-mentioned spectral chip, the incident principal angle is a, the material filling the filter material and the material of the microlens have a refractive index n1, the material of the filter material has a refractive index n2, the refractive index of air is n0, the translation amount of the filter material relative to the pixel is L2, the translation amount of the microlens relative to the filter material is L1, the thickness of the filter material is h2, and the total thickness of the spherical vertex of the microlens plus the filling material is h1, then:

[0017] And the translation amount of the microlens relative to the pixel is L1+L2.

[0018] In the above-mentioned spectral chip, the first number of filter units corresponding to the first filter material with high transmittance is smaller than the second number of filter units corresponding to the second filter material with low transmittance.

[0019] In the above-mentioned spectral chip, the different types of filter materials include 9 filter materials 1, 2, 3, 4, 5, 6, 7, 8, and 9. The transmittance curves of the 9 filter materials in the visible light and near-infrared bands have the following characteristics:

[0020] Filter material 1, color R: Transmittance > 20% for wavelengths above approximately 580nm, and < 20% for other wavelengths;

[0021] Filter material 2, color G1: Transmittance >20% at wavelengths between approximately 475 and 630 nm and greater than 690 nm, and <20% at other wavelengths;

[0022] Filter material 3, color G2: Transmittance >20% at wavelengths between approximately 475 and 610 nm and greater than 690 nm, and <20% at other wavelengths;

[0023] Filter material 4, color G3: Transmittance >20% at wavelengths between approximately 470 and 650 nm, and greater than 660 nm, and <20% at other wavelengths;

[0024] Filter material 5, color B: transmittance >20% at wavelengths <520 nm and greater than 785 nm, and <20% at other wavelengths;

[0025] Filter material 6, color C: transmittance >20% at wavelengths <570 nm and greater than 730 nm, and <20% at other wavelengths;

[0026] Filter material 7, color Y: transmittance >20% at wavelengths >470nm, <20% at other wavelengths;

[0027] Filter material 8, color M: transmittance <20% at wavelengths of approximately 520-580 nm, >20% at other wavelengths;

[0028] Filter material 9, color IR: transmittance > 20% for wavelengths above about 790nm, transmittance < 20% for other wavelengths;

[0029] The filter materials 1 , 7 , and 8 are not arranged adjacent to each other, and the filter materials 2 , 3 , and 4 are arranged adjacent to the filter materials 1 , 7 , and 8 .

[0030] In the above-mentioned spectral chip, the thickness of the filter materials 1, 4 to 8 is between 0.5 and 0.8 um, the thickness of the filter material 2 is 0.6 to 0.7 um, the thickness of the filter material 3 is 0.8 to 1.0 um, the thickness of the filter material 4 is 0.5 to 0.6 um, and the thickness of the filter material 9 is 1 to 1.5 um.

[0031] In the above-mentioned spectral chip, the thickness of filter material 1 is 0.5um, the thickness of filter material 2 is 0.7um, the thickness of filter material 3 is 1um, the thickness of filter material 4 is 0.5um, the thickness of filter material 5 is 0.7um, the thickness of filter material 6 is 0.6um, the thickness of filter material 7 is 0.6um, the thickness of filter material 8 is 0.6um, and the thickness of filter material 9 is 1.5um.

[0032] The spectral chip provided in the embodiment of the present application can overcome the production process limitations of the spectral chip by arranging different types of filter materials in an array and preventing filter material units that are difficult to form from being adjacent to each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Various other advantages and benefits of the present application will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiments below. The drawings in the specification are intended only to illustrate preferred embodiments and are not to be construed as limiting the present application. Obviously, the drawings described below are merely examples of the present application, and those skilled in the art can derive other drawings based on these drawings without inventive effort. Throughout the drawings, the same reference numerals denote the same components.

[0034] FIG1 is a schematic diagram illustrating a filter material setting scheme for a spectral chip according to an embodiment of the present application.

[0035] FIG2 is a schematic diagram illustrating the first part of the production process flow of the spectral chip according to an embodiment of the present application.

[0036] FIG3 is a schematic diagram illustrating the second part of the production process flow of the spectral chip according to an embodiment of the present application.

[0037] FIG4 is a schematic diagram illustrating a comparative example of a production process flow of a spectral chip according to an embodiment of the present application.

[0038] 5A to 5F are schematic diagrams illustrating that the filter materials of a spectral chip according to an embodiment of the present application are periodically arranged in square units.

[0039] FIG5G illustrates a cross-sectional schematic diagram of a filter material including blank pixels in a microlens array of a spectral chip according to an embodiment of the present application.

[0040] FIG6 is a schematic diagram illustrating a periodic arrangement of filter materials in non-square units in a spectral chip according to an embodiment of the present application.

[0041] 7A and 7B are schematic diagrams illustrating an example of microlens arrangement of a spectral chip according to an embodiment of the present application.

[0042] FIG8 is a schematic diagram illustrating an example of calculating the translation amount of the filter material and the microlens of the spectral chip according to an embodiment of the present application.

[0043] FIG9 is a schematic diagram illustrating an example of a photodetection layer and a light modulation layer having a metal gate structure of a spectral chip according to an embodiment of the present application.

[0044] 10A to 10C are schematic diagrams illustrating specific arrangement examples of nine filter materials of a spectral chip according to an embodiment of the present application. DETAILED DESCRIPTION

[0045] Below, the exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application, and it should be understood that the present application is not limited to the exemplary embodiments described herein.

[0046] In an embodiment of the present application, the spectral chip is mainly composed of a photodetection layer and a light modulation layer located above the photodetection layer. Here, the photodetection layer is usually implemented as an image sensor, such as a CMOS image sensor (CIS). The light modulation layer includes different types of filter materials. The different types of filter materials mainly refer to different corresponding transmission spectra, that is, different types of filter materials have different transmittance curves. The filter material can be implemented as a dye, pigment, or other material.

[0047] In a typical spectral chip with a CIS, the light sensing area of ​​the CIS is the core area for spectral image acquisition, and its performance determines indicators such as the signal-to-noise ratio and dynamic range. This area is composed of m×n repeated pixel units, and the photoelectric conversion parts of all pixel units are exactly the same. Different filter materials such as RGB, i.e., R, G, and B filter materials can be used to divide all units into multiple groups of repeated pixels, and then the corresponding algorithms are used to restore the colors. In the technical solution of the present application, in order to obtain detailed information of the spectrum, the goal of spectral sensing can be achieved by only using the design combination of color filter materials without modifying the basic design of the pixels.

[0048] According to an embodiment of the present application, the spectral chip can be implemented as a multispectral sensor, for example, comprising: ① a light sensing region (i.e., located in the photodetection layer), composed of a photodetection layer (which can be understood as multiple, at least partially identical, pixels) and a light modulation layer; and ② peripheral circuitry and wiring. Once the filter material is selected, the filter material is applied to a specific area within the light sensing region. Different filter materials will produce different modulation effects, i.e., different transmittances, for light of different wavelengths. Therefore, in the technical solution of the present application, the type of filter material can refer to different colors, different materials, or different thicknesses of the filter material, as long as the transmittance curves of the different types of filter materials are different. Furthermore, the greater the difference in transmittance between different filter materials for different wavelengths, the better the recovery performance of the final spectral chip. That is, the spectral chip can be formed by applying n types of filter materials to the light sensing region, with each filter material corresponding to one physical pixel or multiple physical pixels, for example, one filter material corresponding to one physical pixel, one filter material corresponding to four physical pixels, or nine physical pixels, etc. The filter material and the corresponding physical pixels constitute a filter unit, and multiple (at least two) filter units constitute a spectral pixel, which serves as the minimum unit for restoring the spectral curve. In addition, the spectral chip includes at least one spectral pixel. For example, if the spectral chip is used to restore the spectral curve, the spectral pixel can be one. In some cases, it can also be used for multi-region spectral restoration, and the spectral pixel is at least one. If the spectral chip is used for spectral imaging, the number of spectral pixels is at least two. It should be noted that if the spectrum needs to be restored, the spectral pixel requires more filter units with different transmission spectra. In principle, it should be at least greater than two, but for higher accuracy, the number of filter units required will also be greater. Accordingly, if the filter material combination to form different filter units is not considered, then in the technical solution of the present application, the number of filter materials should be greater than 2, preferably greater than or equal to 3. Figure 1 illustrates a schematic diagram of a filter material setting scheme for a spectral chip according to an embodiment of the present application. As shown in FIG1 , when there are nine types of filter materials, namely filter materials A, B, C, D, E, F, G, H, and I, the filter materials are formed on the top of the physical pixels to form corresponding filter units A, B, C, D, E, F, G, H, and I. Therefore, the filter units A, B, C, D, E, F, G, H, and I can be considered to constitute a spectral pixel.

[0049] Figure 2 illustrates the first part of the production process flow for a spectral chip according to an embodiment of the present application. As shown in Figure 2, a pixel photosensitive layer 110 and peripheral circuitry 120 relative to the pixel photosensitive layer 110 are first provided on a substrate 100, and a protective / planarization layer 130 is then applied thereon. A first filter material layer 140 corresponding to the filter material 1 is then formed by coating the protective / planarization layer 130. Subsequently, photolithography is performed by superimposing a photomask 141 on the first filter material layer 140. Development or etching is then performed to obtain first filter units 142 corresponding to the formed filter material 1.

[0050] Figure 3 illustrates a schematic diagram of the second portion of the production process flow for a spectral chip according to an embodiment of the present application. As shown in Figure 3, to form the second filter elements 152, a second filter material layer 150 corresponding to the color filter material 2 is applied. Here, the second filter elements 152 and the first filter elements 151 can be made of the same material in different shapes, or different materials, as long as they exhibit different transmittance curves as desired. Similarly, the second filter material layer 150 corresponding to the filter material 2 is formed by coating the protective / planarizing layer 130 at locations other than the first filter elements 142. Subsequently, photolithography is performed by superimposing a photomask 151 on the second filter material layer 150. Development or etching is then performed to obtain the second filter elements 152 corresponding to the formed color filter material 2. Similarly, using the aforementioned 3×3 filter element array as an example, while the cross-sectional view shows three different materials as a period, the aforementioned filter element formation process is actually repeated nine times.

[0051] Specifically, in the embodiments of the present application, the filter material is applied to the wafer surface using a spin-coating process, and the desired distribution is achieved through photolithography, development, and etching. Using multiple pre-designed and manufactured masks, the material applied sequentially to the surface is developed into the corresponding pattern. However, some types of filter materials are opaque to the specific wavelengths of light used in photolithography, meaning they have low transmittance. This prevents light from effectively reaching a certain depth, causing the material to produce a photosensitivity reaction. Therefore, near the surface, where light can reach, the photoreaction can fully occur. However, at deeper locations, the amount of light entering is low, and the photoreaction is sluggish, resulting in poor formation.

[0052] Therefore, for the sake of manufacturing stability, filter units corresponding to filter materials whose transmittance for light of the predetermined wavelength used for lithography is less than a predetermined threshold, that is, filter units made of filter materials that are insensitive to the lithography light source and difficult to form, are not suitable for adjacent arrangement in the array, considering that they are difficult to expose to light during the lithography process. Instead, they should be separated as much as possible by filter units corresponding to filter materials that are sensitive to the lithography light source and easy to form, that is, filter units whose transmittance for light of the predetermined wavelength used for lithography is greater than or equal to a predetermined threshold. That is, it can be understood that the spectral chip has at least one filter unit whose transmittance for light of the predetermined wavelength used for lithography is less than the predetermined threshold and a filter unit whose transmittance for light of the predetermined wavelength used for lithography is greater than or equal to the predetermined threshold, which are arranged adjacent to each other, that is, there is at least one filter unit that is easy to form and a filter unit that is difficult to form arranged adjacent to each other. That is, since all filter elements must be patterned through photolithography, filter elements that are insensitive to the photolithography light source and difficult to form during the photolithography process have poor forming effects. If directly exposed or arranged adjacently, they are prone to problems such as collapse, missing parts, or insufficient thickness at the edges of the pattern. These defects reduce the filtering effect of the filter material and fail to achieve the intended filtering purpose (i.e., light leakage at the defective locations). Therefore, it is necessary to surround them with other filter elements that are sensitive to the photolithography light source and easy to form. During photolithography, the filter elements that are insensitive to the photolithography light source and difficult to form are filled in the area surrounded by the already formed filter elements that are sensitive to the photolithography light source and easy to form, ensuring the edge integrity of all filter elements. The wavelength of the photolithography light source can be 436nm, 365nm, 248nm, 192nm, and / or 14nm. The predetermined threshold can be understood as a transmittance of 3% to 70%, preferably 5% to 15%, for the wavelength of light used in the photolithography.

[0053] FIG4 illustrates a schematic diagram of a comparative example of the production process flow for a spectral chip according to an embodiment of the present application. As shown in FIG4 , when a filter unit that is sensitive to the photolithography light source and easily formed is formed on the protective / planarizing layer 130, its post-lithography morphology is normal. However, when a filter unit that is insensitive to the photolithography light source and difficult to form is formed, its post-lithography edge is thin and its cross-section is curved, resulting in different light transmittances in the thinner and thicker areas. Furthermore, if these filter units are arranged adjacent to each other, the edge morphology will all be curved, thus affecting the filtering effect. Of course, those skilled in the art will understand that in addition to the curved shape shown in the figure, other defects such as missing corners may also exist.

[0054] In contrast, for filter units that are insensitive to the photolithography light source and difficult to form, filter units that are sensitive to the photolithography light source and easy to form can be formed first, and gaps can be formed between the units. Then, filter units that are insensitive to the photolithography light source and difficult to form can be coated at the gaps to fill the gaps between the formed filter units that are sensitive to the photolithography light source and easy to form. After that, photolithography is performed again. The edges of the filter units that are insensitive to the photolithography light source and difficult to form will be restricted by the filter units that are sensitive to the photolithography light source and easy to form, thereby preventing obvious defects such as curved edges that would lead to excessive thickness differences in the filter units.

[0055] Therefore, an embodiment of the present application provides a spectral chip, including a light sensing area, wherein the light sensing area is composed of a photodetection layer and a light modulation layer located above the photodetection layer, wherein the light modulation layer includes a plurality of filter units formed by different types of filter materials, and the different types of filter materials (or filter units) have different transmittance curves. The different types of filter materials are arranged in a filter unit array, and in the filter unit array, the filter units that are insensitive to the photolithography light source and difficult to form are not adjacent. It should be understood that in some embodiments, the filter unit array can be two or more filter units composed of the same type of filter material, that is, there can be two filter units in the filter unit array composed of the same filter material.

[0056] Moreover, in the spectral chip according to the embodiment of the present application, in the array, a filter unit that is sensitive to the photolithography light source and easy to form is first formed, and then a filter unit that is insensitive to the photolithography light source and difficult to form is formed by filling the filter units that are sensitive to the photolithography light source and easy to form non-adjacently between the filter units that are sensitive to the photolithography light source and easy to form.

[0057] Furthermore, in the spectral chip according to the embodiment of the present application, preferably, one filter material corresponds to one filter unit, one filter unit corresponds to one or more physical pixels, and at least one filter unit corresponds to one spectral pixel.

[0058] In the technical solution of the present application, the typical thickness of the filter material is 0.5um to 2um. Adjusting the thickness within this range has the best optical advantage. If the thickness is too thin, the transmittance modulation effect of different wavelengths will deteriorate. If it exceeds 2um, the optical path will be too long, making optical design difficult, resulting in reduced quantum efficiency and increased crosstalk. In addition, the thickness of each filter material can be the same, or the thickness can be adjusted according to the requirements of the transmittance curve. In addition, in the embodiments of the present application, filter materials of the same type but different thicknesses can also be considered as different types of filter materials.

[0059] Therefore, in the spectral chip according to the embodiment of the present application, the thickness of the filter material is 0.5um to 2um.

[0060] Furthermore, in the above-mentioned spectrum chip, the thickness of each filter material, or the thickness of multiple filter materials, varies according to different transmittance curve requirements.

[0061] Furthermore, when the transmittance wavelengths of all filter materials are superimposed, they must completely cover the wavelength range required for the application (for example, covering the visible light and near-infrared bands of 380 to 1300 nm). And, preferably, the transmittance curves of different types of filter materials do not overlap in peaks and troughs. Specifically, the transmittance curve of the same type of filter material can be adjusted by thickness so that the peaks and troughs of the transmittance curve do not overlap. Preferably, the transmittance curves of the selected different types of filter materials have peaks at least near 450 nm, near 475 nm, near 550 nm, near 685 nm, and in the infrared band, so as to meet the requirements of achieving spectral restoration or spectral imaging in the visible light-infrared band.

[0062] Furthermore, in the above-mentioned spectral chip, preferably, the transmission spectrum curves of the different types of filter materials have peak values ​​near 450 nm, near 475 nm, near 550 nm, near 685 nm and in the infrared band.

[0063] In principle, the various filter materials in this application are generally arranged in an n×n matrix and periodically covered along the pixel array; in special cases (such as line sensors), they can also be arranged linearly or rectangularly. Figures 5A to 5F illustrate schematic diagrams of the filter materials of the spectral chip according to an embodiment of the present application being periodically arranged in square units. As shown in Figures 5A to 5F, the numbers represent different types of filter materials, but do not specifically refer to a certain filter material, and the small squares represent physical pixels.

[0064] As shown in Figure 5A, the four colors of filter materials form a periodic 2×2 filter unit arrangement, which has the advantage of low cost and is superior to the RGB solution shown in Figure 1. Specifically, under the same physical resolution, the total area of ​​2×2 is smaller and the manufacturing cost is lower. At the same time, because four different color channels are involved in the calculation, the color reproduction is better than that of a sensor with only RGB colors.

[0065] As shown in Figure 5B, 9 colors of filter materials form a periodic 3×3 filter unit arrangement, such as the RGB solution shown in Figure 1. The fundamental advantage of this solution is that it collects richer spectral information. In some examples, it can also solve the problem of RGB camera's color difference and inaccurate color reproduction.

[0066] As shown in Figure 5C, 16 colors of filter material form a periodic 4×4 filter unit arrangement, which offers high performance advantages. Specifically, it captures richer spectral information than a 9-channel system, resulting in higher spectral restoration accuracy and higher spectral resolution. However, because the 4×4 area is larger than the 3×3 area, this solution outputs an image with a lower physical resolution for the same physical resolution. Similarly, to achieve the same physical resolution, the sensor must have a higher physical resolution, resulting in higher costs.

[0067] As shown in Figure 5D, nine colors of filter material form a periodic 6×6 filter unit arrangement, which offers the advantage of fast output speed and is suitable for spectral chips requiring high-speed output. Specifically, if the physical dimensions of the sensor remain the same, this 6×6 arrangement provides a larger incident light area for each channel, resulting in a stronger signal and a higher signal-to-noise ratio, allowing sufficient external signals to be acquired in a shorter time. Furthermore, if the overall physical resolution of the sensor remains the same, increasing the area of ​​the same channel reduces the overall period, lowering the output image resolution and enabling faster processing and transmission.

[0068] As shown in Figure 5E, seven (or fewer) colors of filter materials form a periodic 3×3 filter unit arrangement, which is used in scenarios based on cost considerations or specific wavelengths. Specifically, in addition to being related to the chip area, the cost is also related to the number of different channels, because each different channel requires an operation step to produce. When there is a need to reduce costs, the channels of two or more pixels can be appropriately merged into the same channel to reduce the production steps. In addition, if there is a higher sensitivity requirement for the light corresponding to a certain channel, this solution can also be used to use the signals of multiple pixels to enhance the acquisition capability of this band.

[0069] As shown in Figure 5F, eight colors of filter material form a periodic 3×3 filter unit arrangement. One pixel is devoid of filter material (i.e., no filter material is provided), resulting in a blank pixel N. (If a filter material corresponds to multiple physical pixels forming a filter unit, the number of blank pixels preferably corresponds to the same number. For example, if a filter material is provided above four physical pixels to form a filter unit, the blank pixels also consist of four physical pixels.) This design is suitable for high-sensitivity products. Furthermore, in this design, one or more pixels can be devoid of filter material, and this design without filter material is not limited to a periodic 3×3 filter unit arrangement. Specifically, the channel without filter material is transparent to the ultraviolet, visible, and infrared wavelengths, meaning it can capture signals from all of these wavelengths. Because this channel does not filter out any light, the amount of light entering it is significantly higher than that of surrounding pixels, allowing it to quickly detect signal strength across all wavelengths. This makes it suitable for darker scenes, or the signal strength of this channel can be used to adjust the exposure of other channels (e.g., adjusting the exposure duration) to achieve optimal results. Preferably, in this solution, the filter unit (no filter material is set) corresponding to the blank pixel is located in the middle of the spectral pixel composed of 3×3 filter units. The design of the N channel without filter material enables the channel to have signals at all wavelengths. Therefore, in a dark light environment or a monochromatic light environment, it can also provide sufficient signals to ensure imaging quality. Furthermore, because the N channel has full-wavelength incidence, it sometimes causes the amount of light entering the channel to be too large. When the signals in other channels are weak, the N channel has reached saturation (overexposure) and becomes an invalid signal. In order to overcome this weakness, sometimes the N channel does not have a filter material and a microlens is not set. In this way, due to the lack of focusing of the microlens, its quantum efficiency is artificially reduced, which can effectively prevent it from being saturated (overexposure) in advance, while also ensuring the ability to collect full-wavelength signals.

[0070] It should be noted that the N channel can have a microlens (similar to the microlenses above other channels, used to enhance low-light imaging effects), or it can be without a microlens (to detect full-wavelength signals and prevent overexposure in most environments). In this case, no microlens is preferred. In the N channel, regardless of whether a microlens is set or not, the area at the same height as the filter material is filled with the same material as the microlens (flush with the lower surface of the microlenses in other channels).

[0071] Specifically, in a preferred embodiment, eight colors of filter material form a periodic 3×3 filter unit arrangement, wherein one pixel is free of filter material, i.e., a blank pixel N exists. As shown in FIG5F , the blank pixel is located in the middle of the spectral pixel formed by the 3×3 filter units. The spectral chip further includes a microlens layer located above the filter material. In this embodiment, no microlens is provided at the blank pixel, i.e., incident light can directly reach the blank pixel without being modulated by the filter material, as shown in FIG5G . FIG5G illustrates a cross-sectional schematic diagram of a filter material having a microlens array and including a blank pixel in a spectral chip according to an embodiment of the present application.

[0072] Furthermore, in this embodiment, the filter material includes an IR filter material (for example, an IR filter material is defined as having a transmittance greater than 20% at wavelengths above approximately 790 nm and a transmittance less than 20% at other wavelengths), and the thickness of the filter unit corresponding to the IR filter material is preferably 0.5um-1.2um, more preferably 0.5um-0.8um, thereby enabling the filter unit corresponding to the IR filter material to have a higher transmittance. Secondly, since the blank pixel is adjacent to the filter unit corresponding to the IR filter material and crosstalk occurs (the absence of a microlens can increase the crosstalk to a certain extent), the light from the blank pixel will partially enter the filter unit corresponding to the IR filter material, thereby also helping to increase the signal strength of the filter unit corresponding to the IR filter material.

[0073] It should be noted that in some embodiments of the present invention, in order to obtain better effects (better transmission spectrum matrix), when designing the filter unit array (or spectral pixel), it may be necessary to arrange the filter units that are difficult to form adjacent to each other. In this case, some filter units that are difficult to form may be arranged adjacent to each other.

[0074] That is, according to an embodiment of the present application, a spectral chip is provided, comprising: a light sensing area, wherein the light sensing area is composed of a photodetection layer and a light modulation layer located above the photodetection layer, wherein the light modulation layer includes eight filter units formed by eight filter materials, and the eight filter materials and one filter unit without filter material are arranged in a 3×3 array.

[0075] In the above-mentioned spectral chip, the one filter unit without filter material is located in the middle of the 3×3 array.

[0076] In the above-mentioned spectral chip, one filter material corresponds to one filter unit, and one filter material corresponds to one or more physical pixels, and the 3×3 array corresponds to one spectral pixel.

[0077] In the above-mentioned spectrum chip, the eight filter materials include at least one IR filter material, and the thickness of the IR filter material is 0.5um to 1.2um.

[0078] In the above-mentioned spectrum chip, the thickness of the IR filter material is 0.5um-0.8um.

[0079] Figure 6 also illustrates a schematic diagram of a spectral chip according to an embodiment of the present invention, wherein the filter materials are periodically arranged in non-square units. As shown in Figure 6, eight colors of filter materials form a periodic 4×2 pixel arrangement, which is suitable for specialized scenarios, such as line sensors with only one or a few rows of pixels, used in specialized industrial applications.

[0080] Generally, an array composed of multiple materials is a single layer; two or more materials can also be stacked when a narrower transmittance peak or other requirements are required.

[0081] Therefore, in the spectral chip according to the embodiment of the present application, the different types of filter materials include an array composed of periodically arranged units, and the units include n×n square units, linear units or rectangular units.

[0082] Furthermore, in the above-mentioned spectral chip, the array is a single layer, or the array partially includes two or more layers stacked together.

[0083] In addition, in the spectral chip according to the embodiment of the present application, a microlens layer may be further included above the light modulation layer. In one example, the pixels of the light modulation layer, the microlens layer and the photodetection layer are completely aligned, as shown in FIG7A . In another example, when the incident main light angle CRA is large, the light modulation layer and the microlens may be shrunk toward the center of the array according to the angle and the refractive index and shape of the microlens to form a certain misalignment, thereby ensuring that as much light as possible enters the pixel at the edge and reducing crosstalk between pixels, as shown in FIG7B . FIG7A and FIG7B illustrate schematic diagrams of examples of microlens settings of the spectral chip according to the embodiment of the present application.

[0084] Therefore, the spectral chip according to the embodiment of the present application further includes: a microlens layer, which is arranged on the light modulation layer, preferably, formed on the upper surface of the light modulation layer.

[0085] Moreover, in the above-mentioned spectral chip, the microlens layer and the light modulation layer are aligned with the pixels of the photodetection layer; or, the microlens layer and the light modulation layer shrink toward the array center of the pixels of the photodetection layer to form a misalignment with the pixels of the photodetection layer.

[0086] Specifically, the translation of the microlens and the light modulation layer is related to the incident chief angle (CRA). A simplified translation scheme is: when the CRA corresponding to each pixel is a, the translation of the filter material and the microlens can be simply calculated using the following method. It should be understood that if the effects of crosstalk and uniformity need to be more accurately considered, the translation calculated below should be optimized using wave optics simulation methods.

[0087] In this simplified solution, the filter material and the microlens are made of the same refractive index, for example, n1, n2, and n0 for air. This approach does not consider the presence of additional thin films on the pixel surface. If additional thin films are present on the pixel surface, further refractive index calculations are required based on the refractive index and thickness.

[0088] Figure 8 illustrates a schematic diagram of an example of calculating the translational amount of the filter material and microlens of a spectral chip according to an embodiment of the present application. As shown in Figure 8 , the incident angle of light is a, the translational amount of the filter material relative to the pixel is L2, the translational amount of the microlens relative to the filter material is L1, the thickness of the filter material is h2, and the total thickness of the spherical vertex of the microlens plus the filling material is h1. Then, we have:

[0089] And the translation amount of the microlens relative to the pixel is L1+L2.

[0090] In addition, in other examples, in a CIS with a metal grid structure such as a back-illuminated CIS, the filter layer can be integrated at the same height as the metal grid to shorten the optical path, as shown in Figure 9. Figure 9 illustrates a schematic diagram of an example of a photodetection layer and a light modulation layer with a metal grid structure of a spectral chip according to an embodiment of the present application.

[0091] It should be noted that in other embodiments of the present application, the number of physical pixels corresponding to different filter materials may be different. For example, there are at least two filter materials, and the transmittance of one filter material is significantly greater than that of the other filter material. At this time, the loss of incident light with a large transmittance is small, and the response value received by the corresponding physical pixel will be larger, and the corresponding signal-to-noise ratio will also be larger, and the overall effect will be better. However, due to the large loss of incident light, the same number of physical pixels may not give a good effect. Therefore, in the embodiment of the present application, the number of physical pixels corresponding to the filter material with a larger transmittance is smaller than the number of physical pixels corresponding to the filter material with a smaller transmittance. For the transmittance, the transmittance curve can be integrated within a specific band (generally understood as the working band range of the spectral chip, such as one or more bands in visible light, infrared, and / or ultraviolet). The larger the value, the greater the transmittance.

[0092] That is, in the spectral chip according to other embodiments of the present application, the first number of physical pixels of the filter unit corresponding to the first filter material with high transmittance is less than the second number of physical pixels of the filter unit corresponding to the second filter material with low transmittance.

[0093] The following describes the operating principle of a spectral chip according to an embodiment of the present application. The intensity signal of the incident light at different wavelengths λ is denoted as x(λ), and the transmission spectrum curve of the optical modulation layer is denoted as T(λ). The optical modulation layer comprises filter units composed of n types of filter materials, each of which has a different transmission spectrum. Overall, the optical modulation layer can be denoted as Ti(λ) (i = 1, 2, 3, ..., n). The corresponding physical pixel beneath each filter material detects the light intensity bi adjusted by the filter material.

[0094] The relationship between the spectral distribution of the incident light and the measurement value of the image sensor can be expressed by the following formula: bi = ∫x(λ)*Ti(λ)*R(λ)dλ

[0095] After further discretization, we get: bi = Σ(x(λ)*Ti(λ)*R(λ))

[0096] Where R(λ) is the response of the image sensor, which is expressed as: Ai(λ)=Ti(λ)*R(λ),

[0097] The above formula can be expanded into matrix form:

[0098] Among them, bi (i = 1, 2, 3, ..., n) is the response of the image sensor after the light to be measured passes through the light modulation layer, which corresponds to the light intensity measurement value of the photoelectric detection layer corresponding to n filter units. When one physical pixel corresponds to one structural unit, it can be understood as the light intensity measurement value corresponding to n physical pixels, which is a vector of length n. A is the system's response to light of different wavelengths, which is determined by two factors: the transmittance of the filter structure and the quantum efficiency of the image sensor. A is a matrix, and each row vector corresponds to the response of the filter unit to incident light of different wavelengths. Here, the incident light is discretely and uniformly sampled, with a total of m sampling points. The number of columns of A is the same as the number of sampling points of the incident light. Here, x(λ) is the intensity of the incident light at different wavelengths λ, that is, the spectrum of the incident light to be measured.

[0099] On the basis of the above implementation, by arraying the spectral pixels, a snapshot spectral imaging device can be realized.

[0100] In the embodiment of the present application, for the scheme of nine filter materials shown in FIG1 , in a specific example, without considering the CIS quantum efficiency, the transmittance curves of the nine filter materials 1, 2, 3, 4, 5, 6, 7, 8, and 9 in the visible light and near-infrared bands may have the following characteristics:

[0101] Filter material 1 (R): Transmittance > 20% for wavelengths above approximately 580nm, and < 20% for other wavelengths;

[0102] Filter material 2 (G1): Transmittance > 20% at wavelengths between approximately 475 and 630 nm and greater than 690 nm, and < 20% at other wavelengths;

[0103] Filter material 3 (G2): Transmittance >20% at wavelengths between approximately 475 and 610 nm and greater than 690 nm, and <20% at other wavelengths;

[0104] Filter material 4 (G3): Transmittance > 20% at wavelengths between approximately 470 and 650 nm and greater than 660 nm, and < 20% at other wavelengths;

[0105] Filter material 5 (B): Transmittance > 20% at wavelengths < 520 nm and greater than 785 nm, and < 20% at other wavelengths;

[0106] Filter material 6 (C): Transmittance > 20% at wavelengths < 570 nm and greater than 730 nm, and < 20% at other wavelengths;

[0107] Filter material 7 (Y): Transmittance > 20% at wavelengths > 470 nm, < 20% at other wavelengths;

[0108] Filter material 8 (M): Transmittance <20% at wavelengths of approximately 520-580 nm, and >20% at other wavelengths;

[0109] Filter material 9 (IR): Transmittance > 20% for wavelengths above approximately 790nm, and < 20% for other wavelengths.

[0110] Furthermore, for manufacturing stability considerations: filter materials 1, 7, and 8 are difficult to expose during the photolithography process, so they cannot be arranged adjacent to each other and are separated as much as possible by filter materials 2, 3, and 4. Since all filter materials must be patterned through photolithography, and filter materials 1, 7, and 8 are not sensitive to the photolithography light source during the photolithography process, the effect is poor. If directly exposed or arranged adjacent to each other, they are prone to collapse, missing, or insufficient thickness at the edge of each pattern. These defects will reduce the filtering effect of the filter material and fail to achieve the desired filtering purpose (i.e., light leakage at the defective location). Therefore, it is necessary to surround it with other easily formed filter materials. During photolithography, the difficult-to-form filter materials are filled into the area surrounded by the already formed, easily formed filter materials (2, 3, 4) to ensure the edge integrity of all filter materials.

[0111] That is, assuming the spectral chip contains any two filter materials that are insensitive to the photolithography light source and difficult to form, such as any two of filter materials 1, 7, and 8, then these two materials should be arranged as far apart as possible to prevent edge incompleteness. If the spectral chip further contains easily formed filter materials, such as filter materials 2, 3, and 4, the difficult-to-form filter materials can be placed adjacent to the easily formed filter materials. Preferably, the easily formed filter materials surround the difficult-to-form filter materials. It should be noted that, generally speaking, the filter units corresponding to the spectral chip are arranged periodically. Therefore, when arranging the filter materials in the entire spectral chip, it is necessary to consider that all difficult-to-form filter materials are arranged as far apart as possible.

[0112] Figures 10A to 10C illustrate a specific arrangement example of nine filter materials in a spectral chip according to an embodiment of the present application. As shown in Figures 10A to 10C, the nine filter materials are arranged in a 3×3 array, with one filter material corresponding to 2×2 physical pixels. The primary arrangement is that filter materials 1, 7, and 8 are not adjacent to each other, and at least one of filter materials 2, 3, and 4 is adjacent to at least one of filter materials 1, 7, and 8 as closely as possible.

[0113] [Corrected 10.03.2025 according to Rule 91] Furthermore, from a thickness perspective, the thickness of each filter material can be the same, or it can be adjusted based on the transmittance curve requirements. This is also true for filter materials of the same type. Preferably, filter materials 1, 4, through 8 have a thickness between 0.5 and 0.8 μm, filter material 2 has a thickness between 0.6 and 0.7 μm, filter material 3 has a thickness between 0.8 and 1.0 μm, filter material 4 has a thickness between 0.5 and 0.6 μm, and filter material 9 has a thickness between 1 and 1.5 μm. This maximizes the differences in transmittance curves between the filter materials, to a certain extent better meeting algorithmic requirements, resulting in better restoration results and ensuring reliability during the manufacturing process. For example, in the examples shown in Figures 10A to 10C, the thickness of filter material 1 (R) is preferably 0.5um, the thickness of filter material 2 (G1) is preferably 0.7um, the thickness of filter material 3 (G2) is preferably 1um, the thickness of filter material 4 (G3) is preferably 0.5um, the thickness of filter material 5 (B) is preferably 0.7um, the thickness of filter material 6 (C) is preferably 0.6um, the thickness of filter material 7 (Y) is preferably 0.6um, the thickness of filter material 8 (M) is preferably 0.6um, and the thickness of filter material 9 (IR) is preferably 1.5um.

[0114] As shown in Figure 10A, filter materials 1, 7, and 8 are arranged separately. Specifically, in the spectral chip, filter material 7 is surrounded by filter materials 4, 3, 5, and 9, respectively. Filter material 8 is surrounded by filter materials 3, 2, 6, and 5, respectively. Filter material 1 is surrounded by filter materials 2, 4, 9, and 6. It can be understood that in this embodiment, 3*3 filter units constitute a spectral pixel, and a periodic array is performed to obtain the spectral chip.

[0115] As above, as shown in Figure 10B, filter material 6, filter material 9, filter material 2, and filter material 5 are arranged around the filter material 7 in the spectrum chip, filter material 3, filter material 6, filter material 5, and filter material 4 are arranged around the filter material 8, and filter material 9, filter material 3, filter material 4, and filter material 2 are arranged around the filter material 1.

[0116] As above, as shown in Figure 10C, filter material 2, filter material 9, filter material 3, and filter material 6 are arranged around the filter material 7 in the spectrum chip, filter material 3, filter material 6, filter material 5, and filter material 4 are arranged around the filter material 8, and filter material 4, filter material 5, filter material 9, and filter material 2 are arranged around the filter material 1.

[0117] Furthermore, in order to prevent crosstalk and improve performance, the filter material 9 is preferably adjacent to the filter material 5 and / or the filter material 6 to reduce crosstalk between wavelengths above 600 nm.

[0118] That is, according to an embodiment of the present application, a spectral chip is provided, comprising: a light sensing area, the light sensing area comprising a photodetection layer and a light modulation layer located above the photodetection layer, wherein the light modulation layer comprises nine filter units formed by nine filter materials, the nine filter materials being arranged in a 3×3 array, and the transmittance curves of the nine filter materials in the visible light and near-infrared bands having the following characteristics:

[0119] Filter material 1, color R: Transmittance > 20% for wavelengths above approximately 580nm, and < 20% for other wavelengths;

[0120] Filter material 2, color G1: Transmittance >20% at wavelengths between approximately 475 and 630 nm and greater than 690 nm, and <20% at other wavelengths;

[0121] Filter material 3, color G2: Transmittance >20% at wavelengths between approximately 475 and 610 nm and greater than 690 nm, and <20% at other wavelengths;

[0122] Filter material 4, color G3: Transmittance >20% at wavelengths between approximately 470 and 650 nm, and greater than 660 nm, and <20% at other wavelengths;

[0123] Filter material 5, color B: transmittance >20% at wavelengths <520 nm and greater than 785 nm, and <20% at other wavelengths;

[0124] Filter material 6, color C: transmittance >20% at wavelengths <570 nm and greater than 730 nm, and <20% at other wavelengths;

[0125] Filter material 7, color Y: transmittance >20% at wavelengths >470nm, <20% at other wavelengths;

[0126] Filter material 8, color M: transmittance <20% at wavelengths of approximately 520-580 nm, >20% at other wavelengths;

[0127] Filter material 9, color IR: transmittance > 20% for wavelengths above about 790nm, transmittance < 20% for other wavelengths;

[0128] The filter materials 1 , 7 , and 8 are not arranged adjacent to each other, and at least one of the filter materials 2 , 3 , and 4 is arranged adjacent to at least one of the filter materials 1 , 7 , and 8 .

[0129] In the above-mentioned spectral chip, in the array, the filter materials 2-6 and the filter material 9 are first formed, and then the filter materials 1, 7 and 8 are formed by filling between the filter materials 2-6 and the filter material 9.

[0130] In the above-mentioned spectral chip, filter material 4, filter material 3, filter material 5, and filter material 9 are arranged around filter material 7 respectively, filter material 3, filter material 2, filter material 6, and filter material 5 are arranged around filter material 8 respectively, and filter material 2, filter material 4, filter material 9, and filter material 6 are arranged around filter material 1 respectively.

[0131] In the above-mentioned spectral chip, filter material 6, filter material 9, filter material 2, and filter material 5 are arranged around filter material 7 respectively, filter material 3, filter material 6, filter material 5, and filter material 4 are arranged around filter material 8 respectively, and filter material 9, filter material 3, filter material 4, and filter material 2 are arranged around filter material 1 respectively.

[0132] In the above spectrum chip, filter material 7 is surrounded by filter material 2, filter material 9, filter material 3, and filter material 6, respectively; filter material 8 is surrounded by filter material 3, filter material 6, filter material 5, and filter material 4, respectively; and filter material 1 is surrounded by filter material 4, filter material 5, filter material 9, and filter material 2.

[0133] In the above-mentioned spectral chip, one filter material corresponds to one filter unit, and one filter material corresponds to one or more physical pixels, and the 3×3 array of the nine filter materials corresponds to one spectral pixel.

[0134] The basic principles of the present application have been described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, and effects mentioned in this application are merely illustrative and not restrictive, and it should not be assumed that these advantages, strengths, and effects are required of each embodiment of this application. In addition, the specific details disclosed above are merely illustrative and facilitating understanding, and are not restrictive. The above details do not limit this application to necessarily being implemented using the above specific details.

[0135] The block diagrams of the devices, devices, equipment, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As will be appreciated by those skilled in the art, these devices, devices, equipment, and systems can be connected, arranged, or configured in any manner. Words such as "include," "comprise," "have," and the like are open-ended words, meaning "including but not limited to," and can be used interchangeably therewith. The words "or" and "and" used herein refer to the words "and / or" and can be used interchangeably therewith, unless the context clearly indicates otherwise. The word "such as" used herein refers to the phrase "such as but not limited to," and can be used interchangeably therewith.

[0136] It should also be noted that in the apparatus, device, and method of the present application, each component or each step can be decomposed and / or recombined, and such decomposition and / or recombination should be regarded as equivalent solutions of the present application.

[0137] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0138] The above description has been provided for the purpose of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although a number of example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A spectral chip, comprising: A light sensing region, the light sensing region consisting of a photodetection layer and a light modulation layer located above the photodetection layer, The light modulation layer includes a plurality of filter units formed by different types of filter materials, the different types of filter materials have different transmittance curves, the different types of filter materials are arranged in a filter unit array, and in the filter unit array, the filter units that are difficult to form are not adjacent.

2. The spectral chip according to claim 1, wherein: In the array, filter units that are easily formed are formed first, and then filter units that are not easily formed are formed by filling the filter units between the easily formed filter units in a non-adjacent manner.

3. The spectral chip according to claim 1, wherein: One filter material corresponds to one filter unit, one filter material corresponds to one or more physical pixels, and at least one filter unit corresponds to one spectral pixel.

4. The spectral chip according to claim 1, wherein: The thickness of the filter material is 0.5um to 2um.

5. The spectral chip according to claim 4, wherein: The thickness of each filter material is the same, or the thickness of the multiple filter materials are different according to different transmittance curves.

6. The spectral chip according to claim 5, wherein: The transmission spectrum curves of the different types of filter materials have peak values near 450 nm, near 475 nm, near 550 nm, near 685 nm and in the infrared band.

7. The spectral chip according to claim 1, wherein: The different types of filter materials include the array composed of periodically arranged units, and the units include n×n square units, linear units or rectangular units.

8. The spectral chip according to claim 7, wherein: The array is a single layer, or the array partially includes two or more layers stacked together.

9. The spectral chip according to claim 1, further comprising: The microlens layer is arranged on the light modulation layer.

10. The spectral chip according to claim 9, wherein: The microlens layer and the light modulation layer are aligned with pixels of the photodetection layer; Alternatively, the microlens layer and the light modulation layer shrink toward the array center of the pixels of the photodetection layer to form a misalignment with the pixels of the photodetection layer.

11. The spectral chip according to claim 10, wherein: The incident principal angle is a, the material filling the filter material and the material of the microlens have a refractive index n1, the material of the filter material has a refractive index n2, the refractive index of air is n0, the translation amount of the filter material relative to the pixel is L2, the translation amount of the microlens relative to the filter material is L1, the thickness of the filter material is h2, and the total thickness of the spherical vertex of the microlens plus the filling material is h1, then: And the translation amount of the microlens relative to the pixel is L1+L2.

12. The spectral chip according to claim 1, wherein: The first number of filter units corresponding to the first filter material with high transmittance is smaller than the second number of filter units corresponding to the second filter material with low transmittance.

13. The spectral chip according to claim 1, wherein: The different types of filter materials include 9 filter materials 1, 2, 3, 4, 5, 6, 7, 8, and 9. The transmittance curves of the 9 filter materials in the visible light and near-infrared bands have the following characteristics: Filter material 1, color R: Transmittance > 20% for wavelengths above approximately 580nm, and < 20% for other wavelengths; Filter material 2, color G1: Transmittance >20% at wavelengths between approximately 475 and 630 nm and greater than 690 nm, and <20% at other wavelengths; Filter material 3, color G2: Transmittance >20% at wavelengths between approximately 475 and 610 nm and greater than 690 nm, and <20% at other wavelengths; Filter material 4, color G3: Transmittance >20% at wavelengths between approximately 470 and 650 nm, and greater than 660 nm, and <20% at other wavelengths; Filter material 5, color B: transmittance >20% at wavelengths <520 nm and greater than 785 nm, and <20% at other wavelengths; Filter material 6, color C: transmittance >20% at wavelengths <570 nm and greater than 730 nm, and <20% at other wavelengths; Filter material 7, color Y: transmittance >20% at wavelengths >470nm, <20% at other wavelengths; Filter material 8, color M: transmittance <20% at wavelengths of approximately 520-580 nm, >20% at other wavelengths; Filter material 9, color IR: transmittance > 20% for wavelengths above about 790nm, transmittance < 20% for other wavelengths; The filter materials 1 , 7 , and 8 are not arranged adjacent to each other, and at least one of the filter materials 2 , 3 , and 4 is arranged adjacent to at least one of the filter materials 1 , 7 , and 8 .

14. The spectral chip according to claim 13, wherein: The thickness of the filter materials 1, 4 to 8 is between 0.5 and 0.8 um, the thickness of the filter material 2 is 0.6 to 0.7 um, the thickness of the filter material 3 is 0.8 to 1.0 um, the thickness of the filter material 4 is 0.5 to 0.6 um, and the thickness of the filter material 9 is 1 to 1.5 um.

15. The spectral chip according to claim 14, wherein: The thickness of filter material 1 is 0.5um, the thickness of filter material 2 is 0.7um, the thickness of filter material 3 is 1um, the thickness of filter material 4 is 0.5um, the thickness of filter material 5 is 0.7um, the thickness of filter material 6 is 0.6um, the thickness of filter material 7 is 0.6um, the thickness of filter material 8 is 0.6um, and the thickness of filter material 9 is 1.5um.

16. The spectral chip according to claim 13, wherein: In the array, the filter materials 2 - 6 and the filter material 9 are formed first, and then the filter materials 1 , 7 and 8 are formed by filling between the filter materials 2 - 6 and the filter material 9 .

17. The spectral chip according to claim 13, wherein: The filter material 7 is surrounded by filter material 4, filter material 3, filter material 5, and filter material 9 respectively. The filter material 8 is surrounded by filter material 3, filter material 2, filter material 6, and filter material 5 respectively. The filter material 1 is surrounded by filter material 2, filter material 4, filter material 9, and filter material 6 respectively.

18. The spectral chip according to claim 13, wherein: The filter material 7 is surrounded by filter material 6, filter material 9, filter material 2, and filter material 5 respectively; the filter material 8 is surrounded by filter material 3, filter material 6, filter material 5, and filter material 4 respectively; and the filter material 1 is surrounded by filter material 9, filter material 3, filter material 4, and filter material 2 respectively.

19. The spectral chip according to claim 13, wherein: Filter material 2, filter material 9, filter material 3, and filter material 6 are arranged around filter material 7 respectively; filter material 3, filter material 6, filter material 5, and filter material 4 are arranged around filter material 8 respectively; and filter material 4, filter material 5, filter material 9, and filter material 2 are arranged around filter material 1 respectively.

20. The spectral chip according to claim 13, wherein: One filter material corresponds to one filter unit, and one filter material corresponds to one or more physical pixels, and the 3×3 array of the nine filter materials corresponds to one spectral pixel.

21. A spectral chip, comprising: A light sensing region, the light sensing region consisting of a photodetection layer and a light modulation layer located above the photodetection layer, The light modulation layer includes eight filter units formed by eight filter materials, and the eight filter units and one filter unit without filter material are arranged in a 3×3 array.

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