Optical laminate, transparent display comprising same, and manufacturing method therefor

Abstract

The present invention relates to an optical laminate, a transparent display comprising same, and a manufacturing method therefor. The optical laminate comprises a front plane substrate and a back plane substrate. The front plane substrate comprises: a first transparent member; a metal film positioned on one surface of the first transparent member; and an adhesive film between the metal film and the first transparent member. The back plane substrate comprises: a second transparent member; a thin film transistor (TFT) positioned on one surface of the second transparent member; a passivation layer formed on one surface of the TFT; and a light-emitting diode (LED) positioned on one surface of the passivation layer. The passivation layer is formed on the back plane substrate, and therefore, even when a metal wiring having a predetermined thickness is used, the TFT can be implemented without substrate damage due to the thickness of the wiring. Furthermore, in fabrication of large-area display devices, a thick wiring can be used to increase the current and maintain high LED luminance, thereby ensuring optical reliability.

Description

Optical laminate, transparent display including same, and method for manufacturing same

[0001] The present invention relates to an optical laminate, a transparent display including the same, and a method for manufacturing the same.

[0002]

[0003] In recent years, technological advancements in the display market have led to a growing demand for large-area display devices. Technological developments are also underway in advanced electronic circuits and display businesses, such as Micro-LED and Mini-LED, which can individually control brightness per unit area.

[0004] In particular, transparent LED displays use a glass or film-type TFT backplane that uses thin-film transistors (TFTs) instead of IC chips, and because they must be transparent, they must be manufactured by increasing the thickness of the wiring and reducing the line width. However, in this case, in order to maintain the brightness of the light-emitting diode (LED), the wire resistance of the wiring connected to the power supply must be very low, so the thickness of the wiring must be as thick as possible. However, considering the amount of current used by the LED, the width of the wiring must be increased, but there is a limit, so the thickness of the wiring must be increased to tens of ㎛, and this thickness is limited by plating and sputtering. However, even in this case, there is a problem that it is difficult to proceed with additional precise patterns such as TFT due to the step difference when forming thick wiring on the glass substrate and / or film.

[0005] Korean Patent Publication No. 10-2019-0003025 discloses a glass circuit board used in packaging semiconductors and various electronic devices, which uses a glass circuit board with through holes formed by a photosensitive glass process to prevent thermal deformation of the glass substrate during the photosensitive glass process and to improve the adhesion of electrodes during the circuit process. However, in this case, it may be very difficult to stably mount TFT and light-emitting diode (LED) elements on the board due to the wiring thickness when manufacturing large areas, and there is a disadvantage of increased cost because it requires a precise process.

[0006] Accordingly, a transparent display and its manufacturing method are required that can implement TFT without damaging the substrate due to the wiring thickness even when metal wiring having a predetermined thickness is applied, and that secures optical reliability by increasing the current amount and maintaining high brightness of the LED through thick wiring when manufacturing a large area.

[0007]

[0008] The present invention is intended to solve the above-mentioned problems, and is an optical laminate that can apply metal wiring having a predetermined thickness, and by forming a passivation layer on a backplane substrate on which a thin film transistor (TFT) is mounted, damage to the substrate can be minimized, so that an LED can be stably mounted, and a transparent display that secures flatness and optical reliability in bonding with a frontplane substrate, and a method for manufacturing the same are provided.

[0009] The present invention aims to provide a method of connecting a metal film to a TFT by attaching it to a separate substrate as an adhesive film, thereby maintaining the thickness of the driving wire thick and manufacturing the line width thin.

[0010] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0011]

[0012] The present invention relates to an optical laminate comprising a front plane substrate and a back plane substrate, wherein the front plane substrate comprises a first transparent member, a metal film positioned on one surface of the first transparent member, and an adhesive film between the metal film and the first transparent member, and the back plane substrate comprises a second transparent member, a thin film transistor (TFT) positioned on one surface of the second transparent member, a passivation layer positioned on one surface of the TFT, and a light emitting diode (LED) positioned on one surface of the passivation layer.

[0013] In one example of the present invention, the TFT (Thin Film Transistor)

[0014] It may include a source electrode and a drain electrode provided spaced apart from each other, an active layer provided to be in contact with the source electrode and the drain electrode, an insulating film provided on the active layer, and a gate electrode provided on the insulating film.

[0015] In one example of the present invention, the passivation layer may have a thickness of 10 μm or less.

[0016] In one example of the present invention, the metal film may have a thickness of 30 μm or more.

[0017] In one example of the present invention, the metal film may be thicker than the light emitting diode (LED).

[0018] In one example of the present invention, a transparent resin layer (OCR) may be included between the front plane substrate and the back plane substrate.

[0019] In one example of the present invention, the first transparent member and the second transparent member may be at least one selected from polyethylene terephthalate, cyclic olefin polymer, polyethylenenaphthalate, polyethersulfone, polycarbonate, cellulose acetate, polymethyl methacrylate, colorless polyimide, glass, ceramic, quartz, borosilicate, aluminosilicate, non-alkali, soda lime glass, meshed glass, colored glass, magic mirror, and holographic glass.

[0020] In one example of the present invention, when the first transparent member and the second transparent member are glass, it may further include at least one selected from mesh glass, colored glass, magic mirror, and holographic glass.

[0021] In one example of the present invention, the metal film may include at least one selected from the group consisting of tin (Sn), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), silver (Ag), iron (Fe), gold (Au), cobalt (Co), titanium (Ti), and tungsten (W).

[0022] In another example of the present invention, the active layer of the backplane substrate may include at least one selected from the group consisting of ITO (Indium tin oxide), ZnO (Zinc oxide), Sn2O3 (Tin oxide), TiO2 (Titanium oxide), IGZO (Indium gallium zinc oxide), ZnSnO (Zinc tin oxide), CdSnO (Cadmium tin oxide), GaSnO (Gallium tin oxide), TiSnO (Titanium tin oxide), CuAlO (Copper aluminum oxide), SrCuO (Strontium copper oxide), LaCuOS (Lanthanum copper oxide sulfide), GaN (Gallium nitride), InGaN (Indium gallium nitride), AlGaN (Aluminum gallium nitride), CNT (Carbon nanotube), and InGaAlN (Indium gallium aluminum nitride).

[0023] In one example of the present invention, the source-drain electrode may further include a metal layer manufactured by including at least one selected from the group consisting of silver (Ag), copper (Cu), gold (Au), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), tellurium (Te), vanadium (V), niobium (Nb), molybdenum (Mo), and alloys thereof.

[0024] In one example of the present invention, the thickness of the TFT may be 100 to 500 nm.

[0025] In one example of the present invention, the adhesive film may include a silicone-based adhesive, have a thickness of 5 μm to 50 μm, and have an adhesion strength with a substrate of 5B or greater.

[0026] In one example of the present invention, the first transparent member may have a smaller area than the second transparent member.

[0027] Also, in one or more examples of the present invention, the present invention relates to a transparent display including the optical laminate.

[0028] In addition, the present invention comprises a step of manufacturing a front plane substrate by forming a metal film on a first transparent member;

[0029] A step of forming a TFT (Thin Film Transistor) on a second transparent member, forming a passivation layer on the TFT, and mounting a light emitting diode (LED) to manufacture a backplane substrate; and

[0030] The present invention relates to a method for manufacturing a transparent display, comprising a step of bonding the front plane substrate and the back plane substrate.

[0031] In another example of the present invention, the step of forming the TFT (Thin Film Transistor) may include a step of mounting a source-drain electrode, an active layer, an insulating film, and a gate electrode.

[0032] In another example of the present invention, the step of forming the passivation layer includes the step of applying a composition for forming a passivation layer, the step of curing the composition to form a passivation cured film, and the step of patterning the cured film, and the passivation layer may have a thickness of 10 μm or less.

[0033] In another example of the present invention, the step of filling an OCR may be included after the step of bonding the front plane substrate and the back plane substrate.

[0034]

[0035] The optical laminate and transparent display according to the present invention form wiring by having a metal film including an adhesive film separately from a backplane substrate including a transparent member and a TFT, thereby solving durability problems such as curl and electrical short of the substrate metal film that may occur even when thick wiring is applied, preventing damage to the TFT that may occur during the patterning process of the metal film, and making it possible to increase the amount of current with thick wiring, thereby maintaining high brightness of a large-area display LED and ensuring optical reliability.

[0036] The optical laminate and transparent display according to the present invention can stably mount an LED by minimizing damage to the backplane substrate by forming a passivation layer on the backplane substrate, and at the same time, ensure flatness in bonding with the frontplane substrate.

[0037] In addition, the transparent display can increase cost competitiveness by using IC-less LEDs by having a backplane substrate with a separate thin film transistor (TFT) mounted thereon.

[0038]

[0039] FIG. 1 is a diagram illustrating a laminated structure of an optical laminate according to an embodiment of the present invention.

[0040] FIG. 2a is a diagram illustrating a laminated structure of a front plane substrate according to an embodiment of the present invention.

[0041] FIG. 2b is a diagram illustrating a front plane substrate according to an embodiment of the present invention.

[0042] FIG. 3 is a diagram illustrating a part of a manufacturing process of a backplane substrate according to one embodiment of the present invention.

[0043] FIG. 4 is a plan view illustrating an example of manufacturing a transparent display according to an embodiment of the present invention.

[0044] Figure 5 is a cross-sectional view showing a part of Figure 4 taken along line A-A'.

[0045] FIG. 6 is a diagram showing a process of bonding a front plane substrate and a back plane substrate according to one embodiment of the present invention.

[0046] In the above drawing, each symbol represents the following:

[0047] 10: Frontplane PCB

[0048] 20: Backplane board

[0049] 100-1: First transparent member

[0050] 100-2: Second transparent member

[0051] 210: Source-drain electrodes

[0052] 211: Metal layer

[0053] 220: Active layer

[0054] 230: Insulating film

[0055] 240: Gate electrode

[0056] 241: Capping electrode

[0057] 250: Passivation layer

[0058] 300: Metal film

[0059] 310: Adhesive film

[0060] 410: Solder layer

[0061] 420: OCR

[0062] 500: Light-emitting diode (LED)

[0063] 1000: LED electrode connection (1)

[0064] 2000: LED electrode connection (2)

[0065] 3000: (+) power supply

[0066] 4000: (-) power supply

[0067] A: Space (opening) to fill with solder paste

[0068]

[0069] The present invention relates to an optical laminate comprising a front plane substrate and a back plane substrate, wherein the front plane substrate comprises a first transparent member, a metal film positioned on one surface of the first transparent member, and an adhesive film between the metal film and the first transparent member, and the back plane substrate comprises a second transparent member, a thin film transistor (TFT) positioned on one surface of the second transparent member, a passivation layer positioned on one surface of the TFT, and a light emitting diode (LED) positioned on one surface of the passivation layer. More specifically, according to the present invention, by separately manufacturing the front plane substrate and the back plane substrate and bonding them together, it is possible to stably manufacture an optical laminate in which elements such as TFTs and light emitting diodes are mounted even when thick wiring is applied, and damage to the TFT that may occur during the patterning process of the metal film is prevented, and the amount of current can be increased by the thick wiring, thereby maintaining high brightness of a large-area display LED and ensuring optical reliability.

[0070] Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings. However, the following drawings attached to this specification illustrate preferred embodiments of the present invention and, together with the contents of the invention described above, serve to further understand the technical concept of the present invention. Therefore, the present invention should not be interpreted as being limited to the matters described in such drawings.

[0071] The terms used herein are for the purpose of describing embodiments and are not intended to limit the present invention. In this specification, singular forms also include plural forms, unless specifically stated otherwise.

[0072] As used herein, the terms "comprises" and / or "comprising" are used to mean that they do not exclude the presence or addition of one or more other components, steps, operations, and / or elements other than the components, steps, operations, and / or elements mentioned. Like reference numerals refer to like elements throughout the specification.

[0073] Spatially relative terms such as “below,” “bottom,” “lower,” “above,” “top,” and “upper” can be used to easily describe the relationship between one element or component and other elements or components, as depicted in the drawings. Spatially relative terms should be understood to include different orientations of the elements during use or operation in addition to the orientation depicted in the drawings. For example, if an element depicted in a drawing is flipped over, an element described as “below” or “lower” of another element may end up “above” the other element. Thus, the exemplary term “below” can include both the above and below directions. Elements can also be oriented in other directions, and thus spatially relative terms can be interpreted based on their orientation.

[0074]

[0075]

[0076] Optical laminates and transparent displays

[0077] The optical laminate of the present invention may include a front plane substrate and a back plane substrate. FIG. 1 illustrates a laminated structure of an optical laminate according to an embodiment of the present invention, FIG. 2A illustrates a laminated structure of a front plane substrate according to an embodiment of the present invention, and FIG. 2B illustrates a front plane substrate according to an embodiment of the present invention. Referring to FIGS. 1 to 2A, the front plane substrate (10) may include an adhesive film (310) and a metal film (300). In the present invention, as shown in FIG. 2A, the metal film (300) in contact with the adhesive film (310) may be referred to as a “metal film including an adhesive film,” and the metal film (300) of FIG. 2A may include an additional adhesive film in addition to the adhesive film (310).

[0078]

[0079] Referring to FIGS. 1 and 2b, the metal film (300) is for forming wiring, and can form a pattern at a position corresponding to an opening in a passivation layer of a separately formed backplane substrate, and the opening can correspond to a (+) power part or a (-) power part of the backplane substrate.

[0080] In addition, Fig. 3 is a diagram illustrating a laminated structure of a backplane substrate according to an embodiment of the present invention. Referring to Fig. 3, the backplane substrate of the present invention is characterized in that a passivation layer is formed so that an opening (area A) is formed on a substrate on which a TFT (Thin Film Transistor) is formed. Accordingly, the optical laminate of the present invention can be manufactured by bonding a frontplane substrate (10) and a backplane substrate (20) that are manufactured separately.

[0081] The metal film (300) including the adhesive film (310) can be positioned so that the adhesive film surface faces the first transparent member.

[0082] The above first transparent member and second transparent member (100-1, 100-2) are generally transparent and are not particularly limited as long as they do not impair the optical properties of the optical laminate. For example, as the first transparent member and the second transparent member (100-1, 100-2), each independently, polyethylene terephthalate, cyclic olefin polymer, polyethylenenaphthalate, polyethersulfone, polycarbonate, cellulose acetate, polymethyl methacrylate, colorless polyimide, glass, ceramic, quartz, borosilicate, aluminosilicate, non-alkali, soda lime glass, meshed glass, colored glass, magic mirror, and holographic glass, etc., which have secured flatness and a transmittance of 89% or more, can be used, and the present invention is not limited thereto, but it is most preferable to use glass. The glass may include, for example, oxide glass such as silicate glass, borate glass, and phosphate glass. In this case, there is an advantage in that heat shrinkage phenomena, etc. do not occur in subsequent processes, etc., and a certain hardness can be imparted to the optical laminate. The type of glass substrate may be quartz, borosilicate, aluminosilicate, alkali-free, soda lime GLASS, etc., and its application range is not limited thereto. In this case, the shape is not limited to a specific shape such as a wafer shape or a square flat plate, and can be processed and used in various ways depending on the purpose.

[0083] In the present invention, the transparent member (100) is a concept that collectively refers to the first transparent member and the second transparent member (100-1, 100-2). In one or more embodiments, the transparent member (100) may have a thickness of 0.5 mm to 20 mm. When the thickness of the transparent member (100) satisfies the above range, the transparent member (100) can be made thin while having excellent hardness, and can prevent deformation or cracking of the metal film (300). Specifically, when the thickness of the transparent member (100) is less than 0.5 mm, it may be difficult to protect the metal film (300), the backplane substrate (20), or other laminated members from external impact, and when it exceeds 20 mm, it may be disadvantageous in terms of thinning or weight reduction. In addition, when used in a place where strength is required, it can be preferably used in a thickness range of 3 mm to 20 mm according to the purpose. Tempered glass can also be used. For thin glass measuring between 0.5 mm and 20 mm, chemically strengthened glass is recommended for quality. For glass measuring between 3 mm and 20 mm, both thermally strengthened and chemically strengthened glass can be used.

[0084] In one or more embodiments, the transparent member (100) may have a single-layer or multi-layer structure. For example, the transparent member (100) may have a single-layer structure formed of a single glass substrate, but is not necessarily limited thereto, and may have a multi-layer structure in which a plurality of glass substrates are laminated. In the case where the transparent member is glass, it may further include one or more selected from mesh glass, colored glass, magic mirror, and holographic glass.

[0085] In one example, the first transparent member may have a smaller area than the second transparent member.

[0086] The above backplane substrate (20) has a plurality of wirings and thin film transistors (TFTs) mounted thereon, and serves to drive an organic light-emitting diode (LED) connected to each TFT. The TFT forms an active layer (active layer) on the backplane substrate through which current can flow, and then controls a gate voltage to move electrons from a source to a drain through the active layer, thereby implementing the operation of the LED element through the generated current. Referring to FIG. 3, in one embodiment of the present invention, the TFT (Thin Film Transistor) may include at least one, and preferably all, of a source electrode and a drain electrode (210) provided spaced apart from each other, an active layer (220) provided to be in contact with the source electrode and the drain electrode, an insulating film (230) provided on the active layer, and a gate electrode (240) provided on the insulating film. In addition, the TFT may further include a metal layer (211) and / or a capping electrode (241), as needed.

[0087] A TFT (Thin Film Transistor) is included in the backplane substrate and is positioned on one side of the second transparent member, and the thickness of the TFT may be 100 to 500 nm.

[0088] The above source-drain electrode (210) is an electrode that supplies and receives electrodes, and is connected to a capping electrode and an active layer, and provides an image display device further including an image display section in which a plurality of light-emitting elements are formed, and a column drive circuit and a row drive circuit for driving the image display section by selecting the light-emitting elements to emit light.

[0089] The above source-drain electrode (210) can be made of a conductive transparent conductive oxide. For example, tin oxide, zinc oxide, gallium oxide, indium oxide, etc. can be used alone or in combination. Specifically, it can include at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium oxide (In2O3), indium gallium oxide (IGO), aluminum zinc oxide (AZO), indium tin zinc oxide (ITZO), gallium zinc oxide (GZO), zinc oxide (ZnO), tin oxide (Sn2O3), and / or titanium oxide (TiO2), and can be formed in a single layer or a multilayer structure of two or more.

[0090] Referring to FIG. 3, the source-drain electrode (210) may further include a metal layer (211). The metal layer (211) may be made of a material having a metallic structure, and may include, for example, one or more selected from the group consisting of a single metal such as silver (Ag), copper (Cu), gold (Au), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), tellurium (Te), vanadium (V), niobium (Nb), and / or molybdenum (Mo), or an alloy thereof such as MoNb. The above metal layer (211) may be applied to both the upper and / or lower portions of the source-drain electrode (210), but in one embodiment of the present invention, it is preferable to be positioned on the lower surface and / or inner surface of the source-drain electrode (210) to prevent damage such as corrosion or electrical attack.

[0091] In addition, a metal coating (not shown) may be further included on the source-drain electrode (210) to ensure adhesion between the source-drain electrode (210) and the solder layer. In particular, Sn or a Cu-Ni alloy may be used as the metal coating, but is not limited thereto.

[0092] The above active layer (220) is a region where electrons and holes recombine, and when a certain voltage or higher is applied to the gate, a channel is formed through which electrons can move between the source electrode and the drain electrode. The above active layer (220) may include at least one selected from the group consisting of ITO (Indium tin oxide), ZnO (Zinc oxide), Sn2O3 (Tin oxide), TiO2 (Titanium oxide), IGZO (Indium gallium zinc oxide), ZnSnO (Zinc tin oxide), CdSnO (Cadmium tin oxide), GaSnO (Gallium tin oxide), TiSnO (Titanium tin oxide), CuAlO (Copper aluminum oxide), SrCuO (Strontium copper oxide), LaCuOS (Lanthanum copper oxide sulfide), GaN (Gallium nitride), InGaN (Indium gallium nitride), AlGaN (Aluminum gallium nitride), CNT (Carbon nanotube), and / or InGaAlN (Indium gallium aluminum nitride). The above active layer (220) is preferably manufactured by including IGZO (Indium gallium zinc oxide) because it has fast electron mobility and a high On current compared to amorphous silicon, which allows the size of the drive TFT to be reduced, making it suitable for transparent displays, and it has low leakage current, which allows power consumption to be reduced in the Off state, making it particularly preferable for large displays.

[0093] The insulating film (230) serves to separate the gate electrode (240) and the active layer (220), and has the effect of blocking light and / or heat from the light-emitting element (LED) to a certain extent, thereby preventing damage to the elements, electrodes, wiring, etc. located underneath. The insulating film (230) may be manufactured using a deposition method such as chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) using a material such as silicon nitride (SiNx), silicon dioxide (silica, SiO2), etc., but is not limited thereto, and may be applied using a manufacturing method generally used in the field.

[0094] The gate electrode (240) may serve to form a channel in the active layer by applying a voltage to the gate and to allow current to flow from the source to the active layer to the drain. The gate electrode (240) may be made of a material having a conductive metallic structure, and may be used as including, for example, one or more selected from the group consisting of a single metal such as silver (Ag), copper (Cu), gold (Au), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), tellurium (Te), vanadium (V), niobium (Nb), and / or molybdenum (Mo), or an alloy thereof such as MoNb, but is not limited thereto. In addition, it may be formed as a single layer or a multilayer structure of two or more layers.

[0095] The above backplane substrate (20) may further include a capping electrode (241) together with the gate electrode (240). The capping electrode (241) may be made of the same material as the gate electrode (240) in the same process, and may generally refer to a portion excluding the gate electrode (240) formed above and / or below the active layer (220). The capping electrode (241) may correspond to a data line and may be a wiring that electrically connects various elements, etc.

[0096] Additionally, the TFT may further include a protective layer (not shown).

[0097] The protective layer must internally have stability against heat generated by the LED light and block internal organic leaching substances such as the LED package, solder paste, and copper foil adhesive, and externally secure durability against heat, moisture, and / or sunlight. The protective layer in the present invention may be formed by thermal curing, photocuring, and thermal curing of a solder resist, and may be either a liquid type or a film type. When the solder resist is a liquid type, it may be manufactured from a solder resist composition containing a binder resin, a photopolymerizable compound, a photopolymerization initiator, a pigment, a dye, a solvent, and / or other additives. When the solder resist is a liquid type, since the printing and drying processes must be repeated during manufacturing, it is more preferable to apply a film type described below in the present invention. When the solder resist is a film type, it may include a protective film, a photosensitive resin layer, and a base film. The above base film comprises a polyester film such as polyethylene terephthalate and is used as a support. The protective film functions as a protective layer to prevent damage to the resist, but is not limited thereto. The photosensitive resin layer may use the same components as the liquid type solder resist composition. In addition, when the solder resist is a film type, it is preferable in that air bubbles are unlikely to be mixed between the substrate and the solder resist layer, the film has excellent flatness, so that a light emitting diode (LED) can be efficiently mounted, and it has high resolution.

[0098] The protective layer can be patterned using photolithography to form a layer that only partially covers the metal film. Accordingly, a light-emitting diode (LED) can be applied onto the metal film in a form suitable for mounting. The specific method of photolithography is not particularly limited, but the method described in the manufacturing method of the optical laminate can be applied without limitation.

[0099] The above lamination process can be applied to known processes without limitation and its implementation examples are not limited. For example, a pattern may be formed through a photoresist, exposure, development, and etching process using a mask.

[0100] In terms of the stacking order of the above backplane substrate, it can be broadly divided into four types depending on the arrangement of the gate electrode. Specifically, top gate-bottom contact, top gate-top contact, bottom gate-bottom contact, and bottom gate-top contact methods can be applied. In particular, in one embodiment of the present invention, it is preferable to apply a top gate structure in which the gate electrode is arranged on top of an insulating film because the active layer (220), such as an IGZO layer in the lower layer, can be protected to some extent from damage caused by light and / or heat that may be received by an LED and / or external light by the insulating film (230) made of a metal material.

[0101] As an embodiment of the present invention, FIGS. 3 to 5 are described based on a structure in which a gate electrode is arranged on top of an insulating film, but the scope of the present invention is not limited thereto.

[0102] Referring to Fig. 3, a source-drain electrode (210) can be formed by patterning metal on a second transparent member (100-2), and an active layer can be formed. Thereafter, an insulating film (230) is formed to block the active layer, a gate electrode (240) is formed on the insulating film, and a passivation layer is formed using a photoresist. Then, as shown in Fig. 3, a solder paste is filled into the opening formed by the patterned passivation layer, and a solder layer (410) is formed to flatten the substrate by screening, and then a light-emitting diode is mounted. When a solder layer is included, adhesion with the wiring can be secured when mounting a light-emitting diode (LED).

[0103] The above passivation layer is not only for protecting the transparent semiconductor element from external damage such as moisture, but may also be for screening the solder paste by forming an opening (area A in FIG. 3) through patterning. Generally, in the process of surface-mounting an LED on a backplane substrate, the backplane substrate is easily damaged. Therefore, in the present invention, in particular, for the manufacture of a display requiring thick wiring, a substrate on which wiring is formed and a substrate on which TFTs and LEDs are mounted are manufactured separately and then bonded. Therefore, in the present invention, a passivation layer is introduced to stably mount the LED on the backplane substrate. The passivation layer (250) may be formed in a state in which the gate electrode (240) region is opened to resolve the problem of non-uniform display. Specifically, referring to FIG. 3, it is preferable that the opening be formed so that the top of the capping electrode can be exposed at the light-emitting diode mounting position and the gate wiring electrode. The above passivation layer (250) can be made of a transparent organic insulating material such as a silicon nitride compound (SiNx), silicon dioxide (silica, SiO2), or an organic insulating layer material.

[0104] At this time, the thickness of the formed passivation layer may be 10㎛ or less, and the thickness of the passivation layer may vary depending on the thickness of the wiring. The thickness of the solder layer described later may be formed to the same extent as the thickness of the formed passivation layer.

[0105] The above passivation layer may be formed of the same material as the above insulating film, and may be formed as a single layer or multiple layers, but is not limited thereto. Preferably, it may be a polymer organic film, and may include at least one material selected from the group consisting of, for example, polyimide, polyvinyl alcohol, polyamic acid, polyamide, polyethylene, polystyrene, polynorbornene, phenylmaleimide copolymer, polyazobenzene, polyphenylenephthalamide, polyester, polymethyl methacrylate, polyarylate, melamine polymer, cinnamate polymer, coumarin polymer, phthalimidine polymer, chalcone polymer, acrylic polymer, epoxy polymer, siloxane polymer, and aromatic acetylene polymer. In particular, it may be an organic film including at least one of an acrylic polymer, an epoxy polymer, and a siloxane polymer.

[0106] The composition for forming the above organic film can be spin-coated, and then a passivation layer can be formed through pre-baking, exposure, development, and post-baking.

[0107] Referring to FIG. 3, which illustrates a laminated structure of a portion of a backplane substrate (20) in a passivation layer forming step according to an embodiment of the present invention, a passivation layer including an opening is formed on a position where the second transparent member, the source-drain electrode, and the gate electrode are laminated. Before bonding the passivation layer to the frontplane substrate (10), an area electrically connected to a separately manufactured frontplane substrate, such as a light-emitting diode (LED) and / or a power supply, is removed to form an opening (area A), and then solder paste is screened into the opening (area A) to form a flat solder layer. If the solder layer is formed without forming a separate opening with the passivation layer, screening is impossible, and thus an uneven backplane substrate is manufactured, which may cause errors in appearance and function when bonded to a frontplane substrate having thick wiring thereafter. Accordingly, since stable mounting of light-emitting diode (LED) elements on a backplane substrate on which a TFT (Thin Film Transistor) is formed due to a passivation layer is possible, substrate defects such as substrate curl and / or lifting due to wiring thickness can be prevented even when manufacturing a large-area display through bonding with a frontplane substrate, and the lower backplane substrate and the thick upper wiring can be electrically connected. The opening (area A) may be an area electrically connected to a separately manufactured frontplane substrate and / or an area connected to a power supply of the (LED). The opening may be formed by coating a composition for forming a passivation layer, followed by a process through pre-baking, exposure, development, and post-baking, or by coating, followed by a dry etching process after post-baking and patterning using Posi PR, and as long as the opening includes the electrically connected area, the opening and the electrically connected area do not have to be perfectly aligned.

[0108] The metal film included to form wiring on the front plane substrate (10) may have a thickness of 30 μm or more. In order to form a thick wiring on the first transparent member, a separate substrate having an adhesive film formed on one surface of the metal film to be bonded may be provided, and a protective film (not shown) may be further included on the lower surface of the adhesive film. The protective film may be removed when bonded to the backplane substrate. In addition, the metal film may be thicker than the light emitting diode (LED) mounted on the backplane substrate, and when this is satisfied, a space may be created between the front plane substrate (10) and the backplane substrate (20) so that the light emitting diode can be stably mounted.

[0109] Referring to Fig. 2b, the patterned portion may mean that the first transparent member is completely covered and then partially removed to form a wiring portion. The patterning process may be performed using a known method, and will be described in detail in the <Method for Manufacturing a Transparent Display> described below.

[0110] The above metal film (300) is not particularly limited as long as it has electrical conductivity, and may include, for example, one or more selected from the group consisting of tin (Sn), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), silver (Ag), iron (Fe), gold (Au), cobalt (Co), titanium (Ti), and / or tungsten (W), and it is preferable to use copper foil in terms of processability, ease of acquisition, conductivity, etc.

[0111] The metal film (300) may be formed by a known metal film process, for example, by preparing and attaching a metal film, or by using at least one method selected from the group consisting of electroless deposition, electroplating, sputtering, thermal evaporation, and electron beam evaporation, but is not limited thereto. According to one embodiment of the present invention, the metal film is formed by a copper foil photo / etching process, and tin plating is performed on the upper portion of the copper foil to provide the visual characteristics of copper and the adhesive force for soldering a light emitting diode (LED).

[0112] In the above metal film pattern pattern / etching, if the metal film pattern etching is performed while the film is attached to the TFT, damage may occur to the TFT. However, as in the present invention, if the metal film is separately attached to the front plane and the metal film wiring patterning is performed and then bonded to the substrate on which the TFT is formed, a CPL (Capping Layer) that protects the organic material may not be separately formed.

[0113] The metal film (300) may have a thickness of 1 to 200 μm, preferably 3 μm to 120 μm, and more preferably 30 μm or more, 30 μm to 100 μm, and most preferably 50 μm to 100 μm. If the thickness of the metal film is less than the above range, it may not be easy to form a uniform thin film or pattern, and if it exceeds the above range, there may be a problem in that it cannot be applied to an electronic device having a thin film structure. In addition, the thickness of the metal film (300) is thicker than that of the light emitting diode (LED) mounted on the backplane substrate (20), and when it is individually bonded, there is an advantage in forming a thick wire. Specifically, when the metal of the backplane substrate becomes thick, glass curl occurs due to the difference in thermal expansion rates between the glass and the metal during the metal coating process, and the subsequent coating processability is deteriorated due to the metal step during metal patterning. Therefore, by separately manufacturing and bonding a frontplane substrate with thick wiring and a backplane substrate equipped with TFTs and light-emitting diodes (LEDs), an optical laminate with thick wiring can be effectively created. This is particularly advantageous because increasing current through thick wiring is particularly advantageous for maintaining high brightness and ensuring optical reliability in large-area display LEDs.

[0114]

[0115] The adhesive film (310) included on one side of the metal film (300) must have excellent adhesion between the backplane substrate (20) and the metal film (300) and ensure transparency. In one embodiment of the present invention, it is preferably manufactured from an adhesive layer composition including a silicone-based adhesive. The adhesive layer composition of the present invention includes a silicone-based additive and a solvent, and may further include an additive. Specifically, in the case of including an adhesive layer formed using a conventional acrylic-based adhesive or an epoxy-based adhesive, there was a problem that the adhesion to the glass substrate was insufficient, or the adhesive layer was damaged by the etchant used for etching the metal layer formed on the upper part of the adhesive layer. Furthermore, in the case of being used in a product mainly used outdoors, such as a transparent display, there was a problem that the adhesion of the adhesive layer to the glass substrate was reduced, or yellowing of the adhesive layer occurred, which caused product defects. In the present invention, when the adhesive layer (500) includes a silicone-based adhesive, not only is the adhesive strength with the glass substrate excellent, but also the chemical resistance to the etchant is excellent, and the heat resistance and reliability in high temperature and high humidity environments are excellent.

[0116] The silicone-based adhesive may be at least one of a silicone compound and a siloxane compound. The silicone compound may be used without particular limitation as long as it is a compound containing a silicon (Si) atom. In addition, the siloxane compound may be a compound containing a siloxane bond of a Si-O bond without limitation. More specifically, in one example of the present invention, the silicone compound and the siloxane compound may be at least one of trimethylated silica, vinyl terminated polydimethylsiloxane, hexamethyl di siloxane, trisiloxane, and tetrakis(trimethylsilyloxy)silane.

[0117] In particular, it is preferable that the silicone-based adhesive of the present invention be included in an amount of 40% to 60% based on the total weight of the adhesive layer composition. In this way, the silicone-based adhesive of the present invention can be added by being diluted at a lower concentration than conventional adhesives, and thus, when bonding the adhesive layer of the present invention to a metal layer or substrate, the adhesion to the metal layer or substrate can be maximized, so that bonding is possible without additional treatment such as UV curing of the adhesive layer, which has the advantage of being possible.

[0118] The solvent is not particularly limited as long as it can dilute the silicone-based adhesive, but may be, for example, toluene, xylene, PGME, and / or PGMEA. It is preferable that the solvent of the present invention be included in an amount of 40% to 55% of the total weight of the adhesive layer composition, from the perspective of stability of the adhesive coating thickness under the metal layer.

[0119] The above additive may be one or more of an anchorage, a cross linker, and a catalyst.

[0120] The above anchorage is added to increase the bonding strength with the metal layer during adhesive layer coating, thereby preventing the adhesive layer from being separated from the metal layer. Generally, there are no particular limitations on the material used as the anchorage, but it is preferable that it does not undergo thermal deformation at temperatures below 200°C.

[0121] The above crosslinking agent is a substance added for chemical bonding between components of the adhesive layer composition, and is preferably a product that does not undergo thermal deformation at temperatures below 200°C.

[0122] The above catalyst is a component added for curing the adhesive layer composition, and helps the adhesive layer composition transform from a liquid phase to a solid phase. Specific examples include a platinum catalyst, a palladium catalyst, and / or an osmium catalyst.

[0123] It is preferable from the viewpoint of adhesive stability that the additive of the present invention is included in an amount of 0.1% to 10% based on the total weight of the adhesive layer composition.

[0124] The adhesive film (310) of the present invention may be formed by heating the adhesive layer composition to a temperature of 100°C to 180°C and curing it.

[0125] The adhesive film (310) may have a thickness of 5 µm to 50 µm, preferably 5 µm to 30 µm, and preferably 5 µm to 25 µm. If the thickness of the adhesive film (310) is less than 5 µm, sufficient adhesive strength with other components cannot be maintained, and if it exceeds 50 µm, there may be a disadvantage in terms of increasing the thickness of the product.

[0126] In one embodiment, the adhesive film (310) may not include a separate member, for example, an intermediate layer or a protective layer, at the contact interface with the metal film (300). Specifically, in the case of an adhesive layer formed using a conventional acrylic adhesive or an epoxy adhesive, as described above, there was a problem in that the adhesive layer was damaged by the etchant used for etching the metal layer formed on the upper portion of the adhesive layer, for example, in the case of an adhesive layer formed using an epoxy adhesive, the opacity of the adhesive layer increased when in contact with the etchant. Therefore, in order to prevent damage to the adhesive layer due to the etchant, the conventional optical laminate separately included a member of an intermediate layer or a protective layer between the adhesive layer and the metal layer. However, when a separate member is included in this way, not only was the processability lowered and the manufacturing cost increased due to the addition of a manufacturing process, but there was also a problem in that it was disadvantageous in terms of manufacturing a thin film. However, the present invention forms an adhesive layer using a silicone-based adhesive having excellent chemical resistance to an etchant as described above, so that damage to the adhesive due to the etchant does not occur, and thus a separate intermediate layer or protective layer that was previously provided for protecting the adhesive is not included, thereby not only improving processability but also providing an advantage in terms of reducing manufacturing costs, and further providing an advantage in terms of thinning the film.

[0127] In one embodiment, the adhesive film (310) may have an adhesion strength of 5B or greater with respect to the backplane substrate (20). As described above, the adhesive film (310) includes a silicone-based adhesive, and thus is characterized by excellent adhesion strength with respect to the backplane substrate (20).

[0128] In one embodiment, the adhesion of the adhesive film (310) to the backplane substrate (20) may be evaluated by the measurement standard ISO 2409: Standard Test Methods for Measuring Adhesion by Tape Test.

[0129]

[0130] The above light emitting diode (LED) (500) is a light emitting element that is mounted on a portion of a backplane substrate (20) where a gate electrode is formed using the SMT (Surface Mount Technology) method and attached to the substrate, and emits light when voltage is applied. The mounting portion of the light emitting diode can be referred to FIGS. 4 and 5. The light emitting diode (LED) (500) includes an N-type electrode and a P-type electrode, and can be formed in various structures such as a lateral type, a vertical type, a flip chip type, etc. Referring to FIG. 5, which illustrates an embodiment of the present invention, (2000) may be a P-type electrode, (1000) may be an N-type electrode, and the color of light emitted may vary depending on the mounting position on the substrate. In an embodiment of the present invention, the light emitting diode (LED) (500) may be any known light emitting diode (LED) without limitation, and the implementation examples thereof are not limited thereto, but it is more suitable to use a flip chip type light emitting diode (LED). In particular, the present invention is an optical laminate formed by bonding a front plane substrate including a metal film as a wiring and a back plane substrate mounted with a TFT, and since a light emitting diode (LED) having a thickness smaller than the metal film of the front plane substrate must be mounted, a thin, leadless flip chip type that can be mounted as is using an electrode pattern on the bottom surface of the chip without using an additional connection structure or intermediate medium can be easily applied. In this respect, there may be further advantages when using a light emitting diode (LED) having a thickness of 30 to 200 μm.

[0131] The spacing or density of the above light emitting diodes (LEDs) (500) is not particularly limited, but may be arranged in a grid pattern. In this case, the spacing between the top, bottom, left, and right may be 0.05 to 50 mm, preferably 1 to 30 mm, and the spacing between the plurality of light emitting diodes (LEDs) may be the same or different depending on the needs of the plurality of light emitting diodes (LEDs). When light emitting diodes (LEDs) are mounted on the backplane substrate of the present invention, there is an advantage as a transparent display capable of transmitting and reproducing images on a substrate having transparency.

[0132] A transparent resin layer (OCR, 420) may be included between the front plane substrate and the back plane substrate. The OCR (Optical Clear Resin) resin is a UV curing agent for improving brightness, and has excellent high transparency, adhesion, and weather resistance. In particular, the OCR applied to the optical laminate for a transparent display can increase light transmittance, improve brightness and brightness, and thus increase high visibility, making it suitable for application to large-area displays. In addition, as the transmittance increases, the power required for driving the display decreases, which has the secondary effect of reducing heat generation and improving impact resistance. The transparent resin layer can maintain transparency while improving bonding properties by filling the gap between the two substrates without any gap, and is included in a solid form through UV curing after application. In one example of the present invention, the OCR may include one or more selected from silicone and acrylic.

[0133]

[0134] <Method for manufacturing transparent displays>

[0135] A method for manufacturing a transparent display according to one embodiment of the present invention includes a step of manufacturing a front plane substrate; a step of manufacturing a back plane substrate; and a step of bonding the front plane substrate and the back plane substrate, and in particular, a step of mounting a light emitting diode (LED) in the step of manufacturing the back plane substrate.

[0136]

[0137] More specifically, the method for manufacturing a transparent display of the present invention may include the steps of forming a metal film on a first transparent member to manufacture a front plane substrate; forming a TFT (Thin Film Transistor) on a second transparent member, forming a passivation layer on the TFT, and mounting a light emitting diode (LED) to manufacture a back plane substrate; and bonding the front plane substrate and the back plane substrate. In the above-described manufacturing method, the step of manufacturing the back plane substrate may further include the step of forming a solder layer by screening solder paste and then the step of mounting a light emitting diode (LED).

[0138]

[0139] Step for manufacturing the front plane substrate (10)

[0140] The steps for manufacturing the front plane substrate (10) of the present invention can be referred to FIG. 2. In the step of including and patterning a metal film including an adhesive film as shown in FIG. 2 (i.e., a metal film having an adhesive film formed on one surface) on a first transparent member, the process of etching and removing an undeveloped portion of the metal layer pattern is not particularly limited and may be performed by a dry etching process or a wet etching process. The dry etching process or the wet etching process may be performed by a known method. In one embodiment, when the etching process is performed by dry etching, the etching performance for the metal film (300) may be excellent, but is not limited thereto. The wiring forming step may be performed by a known method, and details thereof are omitted.

[0141]

[0142] Step for manufacturing a backplane substrate (20)

[0143] The steps for manufacturing the backplane substrate (20) of the present invention can be referred to FIGS. 3 to 5. The step of forming a solder layer (410) on the backplane substrate is generally intended for the purpose of grounding wiring and forming an electrode, and is not limited to materials and methods having excellent conductivity, adhesiveness, and workability. However, it is preferable to use silver (Ag) in a paste form because the amount applied is constant without viscosity change over time, and low-temperature curing and electrical characteristics are excellent.

[0144]

[0145] Referring to FIG. 3, the light emitting diode (LED) can be mounted on a solder layer formed by screening solder paste in an opening (area A) of a passivation layer, and can be mounted without the influence of thick wiring, thereby minimizing the problem of damage to the backplane substrate during the surface mounting process.

[0146] The step of forming the above TFT (Thin Film Transistor) may include a step of forming a source-drain electrode, an active layer, an insulating film, a gate electrode, and a capping electrode. The step may be performed by a known method within a range that does not harm the purpose of the present invention, and a detailed description thereof will be omitted. Referring to FIG. 3, as described above, the backplane substrate (20) may include a source-drain electrode (210), an active layer (220), an insulating film (230), and a gate electrode (240) on the second transparent member (100-2), and the stacking order may be classified into an upper contact structure and a lower contact structure depending on the positional relationship between the electrode material layer (the source-drain electrode (210) and the gate electrode (240)) and the active layer. The upper contact structure may mean that the electrode material layer is formed on the upper portion of the active layer, and in some cases, may mean that the active layer is formed only on the electrode material layer, but is not limited to either one. However, in one embodiment of the present invention, a 'top gate-bottom contact' structure in which the gate electrode (240) is disposed at the top and the source-drain electrode (210) is disposed at the bottom as shown in FIG. 1 may be more preferable because the IGZO or the like used in the active layer can be prevented from being damaged by light / or heat from a light-emitting diode (LED) by the upper layer substrate.

[0147] The step of forming the passivation layer includes a step of applying a composition for forming a passivation layer, a step of curing the composition to form a passivation cured film, and a step of patterning the cured film, and the passivation layer may have a thickness of 10 μm or less.

[0148] In this step, a composition for forming a passivation layer is applied onto a substrate on which a TFT is formed, and a passivation cured film is formed and patterned through exposure and development using photolithography to form the passivation layer. Specific details such as the composition for forming the passivation layer, the position of application, the area, and the amount can be directly applied to the contents of the passivation layer described above, and therefore description thereof will be omitted.

[0149] The step of manufacturing the front plane substrate (10) and the step of manufacturing the back plane substrate may each further include a step of forming a protective layer. The protective layer may be a step of forming a solder resist layer of either a liquid type or a film type, and preferably, it may be a step of forming a solder resist layer. The method of forming the protective layer is not particularly limited, but may be a method of manufacturing a solder resist layer of either the liquid type or the film type using a known method. The protective layer may be positioned in an area other than a portion where a light emitting diode (LED) is to be placed.

[0150]

[0151] FIG. 4 is a plan view simply illustrating a transparent display according to an embodiment of the present invention, and specifically, FIG. 5 is a cross-sectional view taken along the line AA' of FIG. 4. Referring to FIG. 4, for example, when the transparent display of the present invention uses a 2-pin flip-chip type light-emitting diode (LED), it has two electrode connection portions (1000 and 2000 of FIG. 5) of the LED, and can be connected to the upper electrode through the LED without a separate wiring connection. As shown in FIG. 4, a cross-sectional view taken along the line A-A' including a (-) power supply portion (4000 of FIG. 5) and a (+) power supply portion (3000 of FIG. 5) is shown in detail in FIG. 5. At this time, the passivation layer (250) may be formed in an open state at the portion where the connection portion of the light emitting diode (LED) is mounted, that is, the LED electrode connection portion (1000 and 2000 in FIG. 5) and / or the (+) power portion and / or the (-) power portion (4000 in FIG. 5). The (+) power portion (3000 in FIG. 5) and (-) power portion (4000 in FIG. 5) portions may be portions that are electrically connected to a wiring metal film (300) formed on the front plane later via a capping electrode (241) and a solder layer (410). At this time, depending on the direction of the mounted LED, the positions of the (+) power portion and the (-) power portion may be switched with each other.

[0152]

[0153] Bonding stage

[0154] Referring to FIG. 6, the step of bonding the front plane substrate (10) and the back plane substrate (20) is as follows: the front plane substrate (10) having the wiring formed on the first transparent member is inverted, and the back plane substrate (20) manufactured as in FIG. 4 is positioned so that the wiring and the components face each other, then a side tape is attached, and the gap between the front plane substrate (10) and the back plane substrate, which is caused by the thickness of the wiring and the components, is filled with OCR (420). Thereafter, the tape is removed, and the filled OCR is cured through UV curing.

[0155] As shown in Fig. 6, after the step of bonding the front plane substrate (10) and the back plane substrate (20), a step of filling an OCR (420) may be included, and since the contents of the above-described OCR can be applied as is, description thereof will be omitted.

[0156]

[0157] The optical laminate of the present invention and the transparent display including the same, as they exhibit the above-described characteristics, can be suitably used in display devices requiring a large area and low resistance, and in particular, they have excellent curl characteristics and excellent LED brightness, and thus have excellent optical reliability, and thus have the characteristic of being suitably used in devices that can be exposed to the external environment for a long time, such as transparent displays.

[0158]

[0159] The optical laminate and transparent display according to the present invention form wiring by having a metal film including an adhesive film separately from a backplane substrate including a transparent member and a TFT, thereby solving durability problems such as curl and electrical short of the substrate metal film that may occur even when thick wiring is applied, preventing damage to the TFT that may occur during the patterning process of the metal film, and making it possible to increase the amount of current with thick wiring, thereby maintaining high brightness of a large-area display LED and ensuring optical reliability.

Claims

1. An optical laminate comprising a front plane substrate; and a back plane substrate; The front plane substrate includes a first transparent member, a metal film positioned on one surface of the first transparent member, and an adhesive film between the metal film and the first transparent member. An optical laminate, wherein the backplane substrate comprises a second transparent member, a thin film transistor (TFT) positioned on one surface of the second transparent member, a passivation layer positioned on one surface of the TFT, and a light emitting diode (LED) positioned on one surface of the passivation layer.

2. In claim 1, The above TFT (Thin Film Transistor) is The source electrode and drain electrode provided spaced apart from each other, An active layer provided to be in contact with the source electrode and drain electrode, An insulating film provided on the above active layer, and An optical laminate comprising a gate electrode provided on the insulating film.

3. In claim 1, An optical laminate, wherein the passivation layer has a thickness of 10㎛ or less.

4. In claim 1, An optical laminate wherein the metal film has a thickness of 30㎛ or more.

5. In claim 1, The above metal film is an optical laminate thicker than the above light emitting diode (LED).

6. In claim 1, An optical laminate comprising a transparent resin layer (OCR) between the front plane substrate and the back plane substrate.

7. In claim 1, An optical laminate in which the first transparent member and the second transparent member are each independently at least one selected from polyethylene terephthalate, cyclic olefin polymer, polyethylenenaphthalate, polyethersulfone, polycarbonate, cellulose acetate, polymethyl methacrylate, colorless polyimide, glass, ceramic, quartz, borosilicate, aluminosilicate, non-alkali, soda lime glass, wired glass, colored glass, magic mirror, and holographic glass.

8. An optical laminate further comprising at least one selected from mesh glass, colored glass, magic mirror, and holographic glass, when the first transparent member and the second transparent member are glass.

9. In claim 1, An optical laminate in which the metal film comprises at least one selected from the group consisting of tin (Sn), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), silver (Ag), iron (Fe), gold (Au), cobalt (Co), titanium (Ti), and tungsten (W).

10. In claim 2, An optical laminate in which the active layer of the backplane substrate comprises at least one selected from the group consisting of ITO (Indium tin oxide), ZnO (Zinc oxide), Sn2O3 (Tin oxide), TiO2 (Titanium oxide), IGZO (Indium gallium zinc oxide), ZnSnO (Zinc tin oxide), CdSnO (Cadmium tin oxide), GaSnO (Gallium tin oxide), TiSnO (Titanium tin oxide), InGaZnO (Indium gallium zinc oxide), CuAlO (Copper aluminum oxide), SrCuO (Strontium copper oxide), LaCuOS (Lanthanum copper oxide sulfide), GaN (Gallium nitride), InGaN (Indium gallium nitride), AlGaN (Aluminum gallium nitride), CNT (Carbon nanotube), and InGaAlN (Indium gallium aluminum nitride).

11. In claim 2, An optical laminate further comprising a metal layer manufactured by including at least one selected from the group consisting of silver (Ag), copper (Cu), gold (Au), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), tellurium (Te), vanadium (V), niobium (Nb), molybdenum (Mo), and alloys thereof.

12. In claim 1, An optical laminate, wherein the thickness of the TFT is 100 to 500 nm.

13. In claim 1, The above adhesive film is an optical laminate containing a silicone-based adhesive, having a thickness of 5 μm to 50 μm, and having an adhesion strength of 5B or higher with respect to a substrate.

14. In claim 1, An optical laminate, wherein the first transparent member has a smaller area than the second transparent member.

15. A transparent display comprising an optical laminate according to any one of claims 1 to 14.

16. A step of manufacturing a front plane substrate by forming a metal film on a first transparent member; A step of forming a TFT (Thin Film Transistor) on a second transparent member, forming a passivation layer on the TFT, and mounting a light emitting diode (LED) to manufacture a backplane substrate; and A method for manufacturing a transparent display, comprising a step of bonding the front plane substrate and the back plane substrate.

17. In claim 16, A method for manufacturing a transparent display, wherein the step of forming the TFT (Thin Film Transistor) includes the step of mounting a source-drain electrode, an active layer, an insulating film, and a gate electrode.

18. In claim 16, The step of forming the above passivation layer is: A step of applying a composition for forming a passivation layer; A step of curing the above composition to form a passivation cured film; and A step of patterning the above cured film is included, A method for manufacturing a transparent display having a passivation layer having a thickness of 10㎛ or less.

19. In claim 16, After the step of bonding the front plane substrate and backplane substrate, A method for manufacturing a transparent display, comprising a step of filling an OCR.

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