Solar cell, tandem cell, photovoltaic system, power generation apparatus, and electric apparatus

Abstract

Provided in the present application are a solar cell, a tandem cell, a photovoltaic system, a power generation apparatus, and an electric apparatus. In a perovskite solar cell, by means of providing a conductivity enhancement layer comprising a plurality of first metal grid lines arranged at intervals, the transport of charges inside the cell can be facilitated, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

Description

Solar cell, laminated cell, photovoltaic system, power generation device, and power consumption device

[0001] Related Applications

[0002] The present application claims priority to the Chinese patent application No. 2024212519371, filed on June 3, 2024, and entitled "Solar cell, laminated cell, photovoltaic system, power generation device, and power consumption device", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] The present application relates to the field of photovoltaic technology, and in particular to a solar cell, a laminated cell, a photovoltaic system, a power generation device, and a power consumption device. BACKGROUND

[0004] Solar cells can convert solar energy into electrical energy, and have the advantage of being environmentally friendly. In the structure of a solar cell, the light-to-electricity conversion efficiency of a cell made of a traditional transparent conductive glass electrode is low. SUMMARY

[0005] The present application provides a solar cell, comprising a functional layer; the functional layer comprises a first electrode layer, a perovskite layer, and a second electrode layer which are sequentially stacked; a first scribe groove is arranged in the functional layer, the first scribe groove penetrates the second electrode layer to separate the second electrode layer into a plurality of second electrode sub-layers, and the first scribe groove divides the functional layer into a plurality of functional sub-layers; a second scribe groove is arranged in the functional sub-layer, the second scribe groove penetrates the perovskite layer and separates the perovskite layer in the functional sub-layer into an effective area and an ineffective area; a conductive enhancement layer is further arranged in the functional sub-layer, and the conductive enhancement layer is located on at least one side of the second electrode sub-layer; the conductive enhancement layer comprises a plurality of first metal grid lines arranged at intervals, and the plurality of first metal grid lines are located in the effective area.

[0006] In the above-mentioned solar cell, the arrangement of the conductive enhancement layer comprising a plurality of first metal grid lines arranged at intervals can promote the transmission of electric charges inside the cell and improve the light-to-electricity conversion efficiency of the perovskite solar cell.

[0007] In some embodiments, the groove bottom and groove wall of the second scribe groove are covered with the second electrode sub-layer.

[0008] In some embodiments, the width of the first metal grid line is 0.001 mm to 10 mm. The width of the first metal grid line in this range can further reduce the projected area of the first metal grid line on the perovskite sub-layer on the basis of good conductive performance, so that sunlight can pass through the solar cell with high light transmittance.

[0009] In some embodiments, the thickness of the first metal grid line is 50-200 nm. The thickness of the first metal grid line in this range can make the first metal grid line have a more appropriate resistance, on the basis of making the first metal grid line have better strength, to promote the transmission of electric charges in the perovskite battery.

[0010] In some embodiments, the distance between adjacent first metal grid lines is 0.1-30 mm. The distance between adjacent first metal grid lines in this range can further reduce the projected area of the first metal grid line on the perovskite sublayer on the basis of exerting better conductivity, so that sunlight can pass through the solar cell at a higher light transmittance.

[0011] In some embodiments, the first metal grid line intersects the scribing direction of the second scribing groove. This can make the projected area of the first metal grid line on the perovskite sublayer smaller, which is conducive to improving the transmittance of sunlight.

[0012] In some embodiments, the first metal grid line is perpendicular to the scribing direction of the second scribing groove. At this time, the projected area of the first metal grid line on the perovskite sublayer can be further reduced, and the transmittance of sunlight can be improved.

[0013] In some embodiments, the conductive enhancement layer further comprises a plurality of second metal grid lines and a plurality of third metal grid lines arranged at intervals, the plurality of second metal grid lines are located at the groove bottom of the second scribing groove, the plurality of third metal grid lines are located at the groove wall of the second scribing groove, and the plurality of second metal grid lines are connected one-to-one with the plurality of first metal grid lines through the plurality of third metal grid lines. By arranging the second metal grid lines and the third metal grid lines connected with the first metal grid lines, the smooth transmission of electric charges can be facilitated.

[0014] In some embodiments, the angle between the second metal grid line and the scribing direction of the second scribing groove is greater than 0° and less than or equal to 90°.

[0015] In some embodiments, the width of the second metal grid line is 0.001-10 mm. The width of the second metal grid line in this range can reduce the projected area of the second metal grid line on the perovskite sublayer on the basis of exerting better conductivity, so that sunlight can pass through the solar cell at a higher light transmittance.

[0016] In some embodiments, the thickness of the second metal grid line is 50-200 nm. The thickness of the second metal grid line in this range can make the second metal grid line have better strength.

[0017] In some embodiments, the distance between adjacent second metal grid lines is 0.1mm-30mm. The distance between adjacent second metal grid lines in this range can reduce the projected area of the second metal grid lines on the perovskite sub-layer on the basis of better electrical conductivity, so that sunlight can pass through the solar cell with higher light transmittance.

[0018] In some embodiments, the third metal grid line and the groove bottom of the second scribe groove form an angle greater than 0° and less than or equal to 90°.

[0019] In some embodiments, the width of the third metal grid line is 0.001mm-10mm. The width of the third metal grid line in this range can facilitate stable connection with the first metal grid line and the second metal grid line on the basis of better electrical conductivity.

[0020] In some embodiments, the thickness of the third metal grid line is 50nm-200nm. The thickness of the third metal grid line in this range can make the third metal grid line have better strength.

[0021] In some embodiments, the distance between adjacent third metal grid lines is 0.1mm-30mm. The distance between adjacent third metal grid lines in this range can facilitate stable connection with the first metal grid line and the second metal grid line on the basis of better electrical conductivity.

[0022] In some embodiments, the conductive enhancement layer further comprises a metal layer and a plurality of fourth metal grid lines arranged at intervals, the metal layer covers the groove bottom of the second scribe groove, the plurality of fourth metal grid lines are located on the groove wall of the second scribe groove, the plurality of fourth metal grid lines correspond one-to-one to the plurality of first metal grid lines, and the metal layer and the first metal grid line are connected through the fourth grid line. By arranging the metal layer to cover the groove bottom of the second scribe groove, the contact resistance generated by the second scribe groove can be reduced, which is conducive to improving the performance of the solar cell.

[0023] In some embodiments, the thickness of the metal layer is 50nm-200nm. The thickness of the metal layer in this range can make the metal layer have better strength.

[0024] In some embodiments, the fourth metal grid line and the groove bottom of the second scribe groove form an angle greater than 0° and less than or equal to 90°.

[0025] In some embodiments, the width of the fourth metal grid line is 0.001mm-10mm. The width of the fourth metal grid line in this range can facilitate stable connection with the first metal grid line on the basis of better electrical conductivity.

[0026] In some embodiments, the fourth metal grid line has a thickness of 50-200 nm. The fourth metal grid line has a thickness in this range, which can make the fourth metal grid line have better strength.

[0027] In some embodiments, the distance between adjacent fourth metal grid lines is 0.1-30 mm. The distance between adjacent fourth metal grid lines in this range can facilitate stable connection with the first metal grid line on the basis of better electrical conductivity.

[0028] In some embodiments, the functional sub-layer further comprises a third scribe groove, the third scribe groove penetrates the first electrode layer, the third scribe groove separates the first electrode layer into a plurality of first electrode sub-layers, and the active area is arranged on two adjacent first electrode sub-layers.

[0029] In some embodiments, the functional layer further comprises a charge transport layer, the charge transport layer comprises a hole transport layer and an electron transport layer, one of the hole transport layer and the electron transport layer is located between the first electrode layer and the perovskite layer, and the other is located between the perovskite layer and the second electrode layer.

[0030] In some embodiments, the solar cell further comprises an encapsulation layer, the encapsulation layer is located on the surface of the second electrode layer away from the perovskite layer, and the encapsulation layer fills at least part of the first scribe groove and at least part of the second scribe groove.

[0031] In some embodiments, the conductive enhancement layer is located between the second electrode sub-layer and the perovskite layer.

[0032] In some embodiments, the second electrode sub-layer and the perovskite layer have a charge transport layer therebetween, and the conductive enhancement layer is located between the second electrode sub-layer and the charge transport layer.

[0033] A stacked cell comprises a top cell and a bottom cell arranged in a stack; the top cell comprises the solar cell.

[0034] In some embodiments, the solar cell further comprises a transparent substrate, the transparent substrate is located on the surface of the first electrode layer away from the perovskite layer, and the transparent substrate is farther away from the bottom cell than the functional layer. By introducing the above-mentioned solar cell into a stacked cell, sunlight can pass through the perovskite solar cell with a relatively high light transmittance, and thus the bottom cell can receive more sunlight, thereby improving the efficiency of the stacked cell.

[0035] In some embodiments, the bottom cell comprises a silicon-based solar cell.

[0036] A photovoltaic system comprising at least one of the solar cell and the stacked cell.

[0037] A power generation device comprising at least one of the solar cell and the stacked cell.

[0038] A power consumption device comprising at least one of the solar cell and the stacked cell. BRIEF DESCRIPTION OF DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the present application, the drawings used in the present application will be briefly introduced as follows. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can also be obtained according to the drawings without creative labor for those skilled in the art.

[0040] Fig. 1 is a structural schematic diagram of a solar cell in an embodiment of the present application.

[0041] Fig. 2 is a top view of the solar cell corresponding to Fig. 1.

[0042] Fig. 3 is a top view of a solar cell in another embodiment of the present application.

[0043] Fig. 4 is a top view of a solar cell in still another embodiment of the present application.

[0044] Fig. 5 is a structural schematic diagram of a solar cell in another embodiment of the present application.

[0045] Marked in the figure: 10, solar cell; 101, substrate; 102, functional layer; 1021, first electrode layer; 1022, perovskite layer; 1023, second electrode layer; 1024, first scribe groove; 1025, functional sub-layer; 10251, effective area; 10252, ineffective area; 10253, conductive enhancement layer; 10254, first metal gate line; 10255, second metal gate line; 10256, third scribe groove; 10257, metal layer; 1026, second scribe groove; 1027, hole transport layer; 1028, electron transport layer; 103, encapsulation layer.

[0046] In order to better describe and illustrate those embodiments and / or examples disclosed herein, reference can be made to one or more drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of the present application. DETAILED DESCRIPTION

[0047] Some embodiments of the present application are disclosed in detail below with reference to the attached drawings. However, in some instances, well-known details are omitted in order to avoid unnecessarily obscuring the present application. For example, detailed descriptions of such well-known details are omitted so as not to unnecessarily obscure the present application. Further, the drawings and descriptions are provided to enable those skilled in the art to sufficiently understand the present application and are not intended to limit the claimed subject matter.

[0048] The details of one or more embodiments of the application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the application will be apparent from the description and drawings, and from the claims.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the claimed subject matter.

[0050] "Ranges" disclosed herein are defined, described and covered by this application as having a lower limit and an upper limit, and the given range is defined by selecting a lower limit and an upper limit, the selected lower limit and upper limit defining the boundaries of the particular range. Ranges defined by this approach can be inclusive or exclusive of the end values, and can be arbitrarily combined, i.e., any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed, it is understood that ranges of 60-110 and 80-120 are also contemplated. Also, if minimum range values of 1 and 2 are listed, and if maximum range values of 3, 4 and 5 are listed, then the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise stated, a numerical range "a-b" indicates a shorthand way of describing all of the real numbers between a and b, where a and b are both real numbers. For example, the numerical range "0-5" indicates that all of the real numbers between 0 and 5 have been listed herein, and "0-5" is a shorthand way of describing these numerical combinations. Also, when it is stated that a parameter is an integer > 2, it is equivalent to disclosing that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0051] If not specifically stated otherwise, all embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions.

[0052] If not specifically stated otherwise, all technical features and optional technical features of the present application can be combined with each other to form new technical solutions.

[0053] Unless otherwise indicated herein, the steps of the application described herein can be conducted in sequence or randomly, and in some embodiments, in sequence. For example, the method comprising steps (a) and (b) indicates that the method can comprise steps (a) and (b) in sequence, or steps (b) and (a) in sequence. For example, the method can further comprise step (c) indicates that step (c) can be added to the method in any order. For example, the method can comprise steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0054] Unless otherwise indicated herein, the terms "comprising" and "including," as used in this application, are open terms. For example, the terms "comprising" and "including" can mean that other components can also be included in the method or composition.

[0055] Unless otherwise indicated herein, the term "or" as used in this application is inclusive. For example, the phrase "M or N" means "M, N, or both M and N." More specifically, any one of the following conditions fulfills the condition "M or N": M is true or present, and N is false or not present; M is false or not present, and M is true or present; or both M and N are true, or both M and N are present.

[0056] Unless otherwise indicated herein, the term "room temperature" as used in this application generally refers to a temperature of 4 degrees Celsius (°C) to 30 °C, preferably 25 ± 5 °C.

[0057] Unless otherwise indicated herein, the terms used in this application have the commonly understood meanings by those skilled in the art. Unless otherwise indicated herein, the values of the parameters mentioned in this application can be measured by various methods commonly used in the art. For example, the tests can be performed according to the methods given in the examples of this application.

[0058] Referring to FIG. 1, an embodiment of the present application provides a solar cell 10. The solar cell 10 comprises a functional layer 102. The functional layer 102 comprises a first electrode layer 1021, a perovskite layer 1022 and a second electrode layer 1023 which are sequentially stacked. The functional layer 102 is provided with a first scribe groove 1024 which penetrates the second electrode layer 1023 to separate the second electrode layer 1023 into a plurality of second electrode sub-layers, and the functional layer 102 is divided into a plurality of functional sub-layers 1025 by the first scribe groove 1024. The functional sub-layer 1025 is provided with a second scribe groove 1026 which penetrates the perovskite layer 1022 and separates the perovskite layer 1022 in the functional sub-layer 1025 into an effective area 10251 and an ineffective area 10252. The functional sub-layer 1025 is further provided with a conductive enhancement layer 10253 which is located on at least one side of the second electrode sub-layer. The conductive enhancement layer 10253 comprises a plurality of first metal grid lines 10254 which are spaced apart and located in the effective area 10251.

[0059] It can be understood that, for the purpose of more clearly illustrating, the functional sub-layer 1025 is marked with a dashed box in FIG. 1.

[0060] It can be understood that the effective area 10251 comprises an effective power generation area, and the ineffective area 10252 belongs to a part of a dead area.

[0061] In the solar cell 10 of the embodiment, the conductive enhancement layer 10253 comprising a plurality of first metal grid lines 10254 which are spaced apart can improve the conductivity of the cell, promote the transmission of charges in the cell, and improve the photoelectric conversion efficiency of the solar cell 10.

[0062] Further, the conductive enhancement layer 10253 comprises a plurality of first metal grid lines 10254 which are spaced apart, so that the sunlight can pass between adjacent first metal grid lines 10254, thereby improving the transmittance of sunlight. When the solar cell 10 is assembled into a stacked cell, more sunlight can pass through the solar cell. Further, the lower cell of the perovskite cell can receive more sunlight to improve the photoelectric conversion efficiency of the stacked cell.

[0063] In some embodiments, the groove bottom and groove wall of the second scribe groove 1026 are covered with the second electrode sub-layer.

[0064] It can be understood that the solar cell 10 further comprises a substrate 101. Optionally, the substrate 101 comprises a transparent substrate.

[0065] In some embodiments, the first scribe groove 1024 also penetrates the perovskite layer 1022 to separate the perovskite layer 1022 into multiple perovskite sub-layers. The functional sub-layer 1025 includes a perovskite sub-layer and a second sub-electrode layer. In the functional sub-layer 1025, the second scribe groove 1026 penetrates the perovskite sub-layer. Further, in adjacent functional sub-layers 1025, the perovskite sub-layer of one active area 10251 and the perovskite sub-layer of another inactive area 10252 are both exposed from the edge of the first scribe groove 1024. Further, the edges of the one active area 10251 and the other inactive area 10252 respectively serve as the groove walls of the first scribe groove 1024.

[0066] In some embodiments, the active area 10251 and the inactive area 10252 are both provided with multiple first metal grid lines 10254 arranged at intervals.

[0067] It can be understood that the conductive enhancement layer 10253 is located on at least one side of the second electrode sub-layer, which means that the conductive enhancement layer 10253 is located on the surface of the second electrode sub-layer close to the perovskite sub-layer, or the conductive enhancement layer 10253 is located on the surface of the second electrode sub-layer away from the perovskite sub-layer, or both opposite surfaces of the second electrode sub-layer are provided with the conductive enhancement layer 10253 in the direction perpendicular to the thickness of the perovskite sub-layer.

[0068] It can be understood that in the embodiment shown in FIG. 1, the conductive enhancement layer 10253 is located on the surface of the second electrode sub-layer away from the perovskite sub-layer.

[0069] It can also be understood that in other embodiments, the conductive enhancement layer 10253 is located between the perovskite sub-layer and the second electrode sub-layer. In this way, the first metal grid lines 10254 of the conductive enhancement layer 10253 can be protected by the second electrode sub-layer, reducing the risk of the first metal grid lines 10254 being pulled by the softening encapsulation glue during the encapsulation process, and thus reducing the risk of misalignment and falling of the first metal grid lines 10254 in the solar cell 10.

[0070] It can also be understood that in other embodiments, the conductive enhancement layer 10253 is provided between the perovskite sub-layer and the second electrode sub-layer, and the surface of the second electrode sub-layer away from the perovskite sub-layer is also provided with the conductive enhancement layer 10253. In this way, the transmission rate of charges in the solar cell 10 can be further improved, and the performance of the solar cell 10 can be improved.

[0071] Further, the conductive enhancement layer 10253 is arranged between the perovskite sub-layer and the second electrode sub-layer, and the surface of the second electrode sub-layer away from the perovskite sub-layer is also provided with the conductive enhancement layer 10253, the projection of the first metal grid line 10254 on the perovskite sub-layer in the two conductive enhancement layers 10253 coincides, so as to reduce the shading of the first metal grid line 10254 to the sunlight, and the sunlight can pass through the solar cell 10 with a higher transmittance.

[0072] It can also be understood that the first metal grid line 10254 can be prepared by a patterned template transfer method. For example, in the preparation of the first metal grid line 10254, a patterned template can be used as a mask plate, and then the first metal grid line 10254 can be prepared by deposition.

[0073] Optionally, the first metal grid line 10254 includes one or more of a first copper grid line and a first silver grid line.

[0074] In some embodiments, the first metal grid line 10254 intersects the scribing direction of the second scribing groove 1026. In this way, the projection area of the first metal grid line 10254 on the perovskite sub-layer can be smaller, which is conducive to improving the transmittance of sunlight. Optionally, when the first metal grid line 10254 is perpendicular to the scribing direction of the second scribing groove 1026, the projection area of the first metal grid line 10254 on the perovskite sub-layer can be further reduced, and the transmittance of sunlight can be improved.

[0075] In some embodiments, a plurality of first metal grid lines 10254 are arranged in parallel. The parallel arrangement of the plurality of first metal grid lines 10254 can make the first metal grid line 10254 maintain a relatively regular structure, which is conducive to the design and processing of the first metal grid line 10254.

[0076] In some embodiments, the width of the first metal grid line 10254 is 0.001 millimeter (mm) to 10 mm. The width of the first metal grid line 10254 in this range can further reduce the projection area of the first metal grid line 10254 on the perovskite sub-layer on the basis of good conductive performance, so that the sunlight can pass through the solar cell 10 with a higher transmittance. Optionally, the width of the first metal grid line 10254 can be 0.001 mm, 0.01 mm, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, and any value in the range formed by any two of the above values.

[0077] In some embodiments, the thickness of the first metal grid line 10254 is 50 nanometers (nm) to 200 nm. The thickness of the first metal grid line 10254 in this range can make the first metal grid line 10254 have a more appropriate resistance, promote the transmission of electric charges in the perovskite battery on the basis of making the first metal grid line 10254 have better strength. Alternatively, the thickness of the first metal grid line 10254 can be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, and any value in the range consisting of any two of the above values.

[0078] In some embodiments, the distance between adjacent first metal grid lines 10254 is 0.1 mm to 30 mm. The distance between adjacent first metal grid lines 10254 in this range can further reduce the projected area of the first metal grid line 10254 on the perovskite sub-layer on the basis of better electrical conductivity, so that sunlight can pass through the solar cell 10 with higher light transmittance. Alternatively, the distance between adjacent first metal grid lines 10254 can be 0.1 mm, 0.5 mm, 1 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, and any value in the range consisting of any two of the above values.

[0079] In some embodiments, the conductive enhancement layer 10253 further comprises a plurality of second spaced metal grid lines 10255 and a plurality of third spaced metal grid lines (not shown in the figure), the plurality of second metal grid lines 10255 are located at the bottom of the second scribe groove 1026, the plurality of third metal grid lines are located at the wall of the second scribe groove 1026, and the plurality of second metal grid lines 10255 are connected to the plurality of first metal grid lines 10254 one by one through the plurality of third metal grid lines. The second metal grid lines 10255 and the third metal grid lines connected to the first metal grid lines 10254 facilitate the smooth transmission of electric charges. It can be understood that one-to-one connection means that each first metal grid line 10254 corresponds to a third metal grid line connected thereto. It can be understood that the second metal grid lines 10255 are located at the bottom of the second scribe groove 1026, which means that the second metal grid lines 10255 are located on the second electrode sublayer at the bottom of the second scribe groove 1026. Further, the second metal grid lines 10255 can be located on the surface of the second electrode sublayer away from the first electrode layer 1021, or on the surface of the second electrode sublayer close to the first electrode layer 1021, or on both the surface of the second electrode sublayer away from the first electrode layer 1021 and between the second electrode sublayer and the first electrode layer 1021. Optionally, the second metal grid lines 10255 comprise one or more of second copper grid lines and second silver grid lines. Further optionally, the number of first metal grid lines 10254, second metal grid lines 10255 and third metal grid lines are equal, and the first metal grid lines 10254, second metal grid lines 10255 and third metal grid lines are connected one by one respectively.

[0080] It can be understood that the second metal grid lines 10255 and the third grid lines can be prepared separately or simultaneously with the first metal grid lines 10254.

[0081] In some embodiments, the angle between the second metal grid lines 10255 and the scribe direction of the second scribe groove 1026 is greater than 0° and less than or equal to 90°.

[0082] Referring to FIG. 2, in some embodiments, the angle between the second metal grid lines 10255 and the scribe direction of the second scribe groove 1026 is 90°, i.e. the second metal grid lines 10255 are perpendicular to the scribe direction of the second scribe groove 1026. This facilitates the simultaneous preparation of the first metal grid lines 10254 and the second metal grid lines 10255. In order to clearly illustrate the second grid lines, the position of the second scribe groove 1026 is marked by a dashed line in FIG. 2. At this time, the angle a between the second metal grid lines 10255 and the scribe direction of the second scribe groove 1026 is 90°.

[0083] Referring to FIG. 3, in some embodiments, the included angle between the second metal grid line 10255 and the scribing direction of the second scribing groove 1026 is greater than 0° and less than 90°. In order to clearly show the second grid line, the position of the second scribing groove 1026 is marked by a dashed line in FIG. 3. At this time, the included angle between the second metal grid line 10255 and the scribing direction of the second scribing groove 1026 is α, 0 < α < 90°. Compared with the case where the second metal grid line 10255 is perpendicular to the groove wall of the second scribing groove 1026, the second metal grid line 10255 designed at this time has a larger contact area with the second electrode sub-layer, which can obtain a smaller resistance, thereby reducing the contact resistance generated by the second scribing groove 1026, and is conducive to promoting the performance improvement of the solar cell 10. For example, the included angle between the second metal grid line 10255 and the scribing direction of the second scribing groove 1026 can be 10°, 30°, 45°, 60°, 80°, and any value within the range formed by any two of the above values.

[0084] Optionally, the second metal grid line 10255 can be prepared by a patterned template transfer method. For example, in the preparation of the second metal grid line 10255, a patterned template can be used as a mask plate, and then the second metal grid line 10255 can be prepared by deposition.

[0085] In some embodiments, the width of the second metal grid line 10255 is 0.001 mm to 10 mm. Optionally, the width of the second metal grid line 10255 can be 0.001 mm, 0.01 mm, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, and any value within the range formed by any two of the above values. The width of the second metal grid line 10255 within the range can reduce the projected area of the second metal grid line 10255 on the perovskite sub-layer on the basis of better electrical conductivity, so that sunlight can pass through the solar cell with a higher light transmittance.

[0086] In some embodiments, the thickness of the second metal grid line 10255 is 50 nm to 200 nm. The thickness of the second metal grid line 10255 within the range can make the second metal grid line 10255 have better strength. Optionally, the thickness of the second metal grid line 10255 can be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, and any value within the range formed by any two of the above values.

[0087] In some embodiments, the distance between adjacent second metal grid lines 10255 is 0.1 mm to 30 mm. The distance between adjacent second metal grid lines 10255 in this range can reduce the projected area of the second metal grid lines 10255 on the perovskite sub-layer on the basis of better electrical conductivity, so that sunlight can pass through the solar cell with a higher light transmittance. Alternatively, the distance between adjacent second metal grid lines 10255 can be 0.1 mm, 0.5 mm, 1 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, and any value in the range consisting of any two of the above values.

[0088] In some embodiments, the angle between the third metal grid line and the groove bottom of the second scribe groove 1026 is greater than 0° and less than or equal to 90°. For example, the angle between the third metal grid line and the groove bottom of the second scribe groove 1026 can be 10°, 30°, 45°, 60°, 80°, 90°, and any value in the range consisting of any two of the above values.

[0089] In some embodiments, the width of the third metal grid line is 0.001 mm to 10 mm. The width of the third metal grid line in this range can facilitate stable connection between the first metal grid line 10254 and the second metal grid line 10255 on the basis of better electrical conductivity. Alternatively, the width of the third metal grid line can be 0.001 mm, 0.01 mm, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, and any value in the range consisting of any two of the above values.

[0090] In some embodiments, the thickness of the third metal grid line is 50 nm to 200 nm. The thickness of the third metal grid line in this range can make the third metal grid line have better strength. Alternatively, the thickness of the third metal grid line can be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, and any value in the range consisting of any two of the above values. Further alternatively, the thickness of the first metal grid line 10254, the thickness of the second metal grid line 10255, and the thickness of the third metal grid line are equal.

[0091] In some embodiments, the distance between adjacent third metal grid lines is 0.1 mm to 30 mm. The distance between adjacent third metal grid lines in this range can facilitate stable connection with the first metal grid lines 10254 and the second metal grid lines 10255 on the basis of better electrical conductivity. Alternatively, the distance between adjacent third metal grid lines can be 0.1 mm, 0.5 mm, 1 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, and any value in the range formed by any two of the above values.

[0092] Alternatively, the third metal grid lines include one or more of third copper grid lines and third silver grid lines.

[0093] Referring to FIG. 4, in some embodiments, the conductive enhancement layer 10253 further includes a metal layer 10257 and a plurality of fourth metal grid lines (not shown in the figure) arranged at intervals, the metal layer covers the groove bottom of the second scribe groove 1026, the plurality of fourth metal grid lines are located on the groove wall of the second scribe groove 1026, the plurality of fourth metal grid lines correspond one-to-one to the plurality of first metal grid lines 10254, and the metal layer 10257 is connected to the first metal grid lines 10254 through the fourth grid lines. By arranging the metal layer 10257 to cover the groove bottom of the second scribe groove 1026, the contact resistance generated by the second scribe groove 1026 can be reduced, which is conducive to improving the performance of the solar cell 10. Alternatively, the metal layer includes one or more of a copper layer and a silver layer. It can be understood that the metal layer 10257 can be located on the surface of the second electrode sub-layer away from the first electrode layer 1021, on the surface of the second electrode sub-layer close to the first electrode layer 1021, or on both the surface of the second electrode sub-layer away from the first electrode layer 1021 and between the second electrode sub-layer and the first electrode layer 1021. Alternatively, the number of first metal grid lines 10254 and fourth metal grid lines is equal, and the first metal grid lines 10254 and the fourth metal grid lines are connected one-to-one respectively.

[0094] In some embodiments, the thickness of the metal layer 10257 is 50 nm to 200 nm. The thickness of the metal layer 10257 in this range can make the metal layer 10257 have better strength. Alternatively, the thickness of the metal layer 10257 can be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, and any value in the range formed by any two of the above values.

[0095] In some embodiments, the fourth metal grid line forms an angle greater than 0° and less than or equal to 90° with the bottom of the second scribe groove 1026. For example, the fourth metal grid line can form an angle of 10°, 30°, 45°, 60°, 80°, 90°, or any value within a range defined by any two of the aforementioned values with the bottom of the second scribe groove 1026.

[0096] In some embodiments, the fourth metal grid line has a width of 0.001 mm to 10 mm. The fourth metal grid line can have a width within this range to facilitate stable connection with the first metal grid line 10254 while maintaining good conductivity. Alternatively, the fourth metal grid line can have a width of 0.001 mm, 0.01 mm, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, or any value within a range defined by any two of the aforementioned values.

[0097] In some embodiments, the fourth metal grid line has a thickness of 50 nm to 200 nm. The fourth metal grid line can have a thickness within this range to maintain good strength. Alternatively, the fourth metal grid line can have a thickness of 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, or any value within a range defined by any two of the aforementioned values. Further alternatively, the thickness of the metal layer 10257, the thickness of the first metal grid line 10254, and the thickness of the fourth metal grid line are equal.

[0098] In some embodiments, the distance between adjacent fourth metal grid lines is 0.1 mm to 30 mm. The distance between adjacent fourth metal grid lines can be within this range to facilitate stable connection with the first metal grid line 10254 while maintaining good conductivity. Alternatively, the distance between adjacent fourth metal grid lines can be 0.1 mm, 0.5 mm, 1 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, or any value within a range defined by any two of the aforementioned values.

[0099] Alternatively, the fourth metal grid line includes one or more of a fourth copper grid line and a fourth silver grid line.

[0100] In some embodiments, the functional sub-layer 1025 further comprises a third scribe groove 10256, the third scribe groove 10256 penetrates the first electrode layer 1021, and the third scribe groove 10256 separates the first electrode layer 1021 into a plurality of first electrode sub-layers, and the effective area 10251 is located on two adjacent first electrode sub-layers. Further, the bottom of the first scribe groove 1024 and the bottom of the second scribe groove 1026 are located on the first electrode sub-layer. Optionally, the perovskite sub-layer fills the third scribe groove 10256 in the effective area 10251. It can be understood that when the functional sub-layer 1025 further comprises the third scribe groove 10256, in the example shown in FIG. 1, between the third scribe groove 10256 and the first scribe groove 1024 in the direction of the first scribe groove 1024, the third scribe groove 10256 and the first scribe groove 1024 are dead zones. At this time, the effective area 10251 includes an effective power generation area and part of a dead zone, and the ineffective area 10252 belongs to part of the dead zone.

[0101] In some embodiments, the functional layer 102 further comprises a charge transport layer, and the charge transport layer comprises a hole transport layer 1027 and an electron transport layer 1028; one of the hole transport layer 1027 and the electron transport layer 1028 is located between the first electrode layer 1021 and the perovskite layer 1022, and the other is located between the perovskite layer 1022 and the second electrode layer 1023.

[0102] As shown in the solar cell 10 in FIG. 1, the hole transport layer 1027 is located between the first electrode layer 1021 and the perovskite layer 1022, and the electron transport layer 1028 is located between the perovskite layer 1022 and the second electrode layer 1023, thereby forming a transsolar cell. It can be understood that in some embodiments, the electron transport layer 1028 is located between the first electrode layer 1021 and the perovskite layer 1022, and the hole transport layer 1027 is located between the perovskite layer 1022 and the second electrode layer 1023, thereby forming a formal solar cell.

[0103] Referring to FIG. 5, in some embodiments, the solar cell 10 further comprises an encapsulation layer 103; the encapsulation layer 103 is located on the surface of the second electrode layer 1023 away from the perovskite layer 1022, and the encapsulation layer 103 fills at least part of the first scribe groove 1024 and at least part of the second scribe groove 1026.

[0104] In some embodiments, the conductive enhancement layer 10253 is located between the second electrode sub-layer and the perovskite layer 1022. Further, the second electrode sub-layer and the perovskite layer 1022 have a charge transport layer, and the conductive enhancement layer 10253 is located between the second electrode sub-layer and the charge transport layer.

[0105] The application also provides a preparation method of the perovskite solar cell. The preparation method comprises the following steps: sequentially preparing the first electrode layer and the perovskite layer; performing scribing on the perovskite layer to form a second scribing groove penetrating through the perovskite layer; preparing the conductive enhancement layer on the perovskite layer, and preparing the second electrode layer on the conductive enhancement layer; or preparing the second electrode layer on the perovskite layer, and preparing the conductive enhancement layer on the second electrode layer; and performing scribing on the second electrode layer and the conductive enhancement layer to form a first scribing groove penetrating through the second electrode layer and the conductive enhancement layer.

[0106] Optionally, the perovskite layer is scribed simultaneously when the first scribing groove is formed, so that the first scribing groove separates the perovskite layer into a plurality of perovskite sub-layers.

[0107] It can be understood that the first electrode layer is scribed to form a third scribing groove penetrating through the first electrode layer before the perovskite layer is prepared.

[0108] It can also be understood that the first scribing groove, the second scribing groove and the third scribing groove can be prepared by laser scribing.

[0109] In some embodiments, the conductive enhancement layer is prepared by a patterned template transfer method.

[0110] It can be understood that other functional layers, such as a modification layer (not shown in the figure), can be introduced into the perovskite solar cell according to requirements. Optionally, the perovskite solar cell can be provided with a modification layer with a suitable energy level, which can play one or more of the following roles: reducing the energy level barrier, promoting energy level matching, improving carrier extraction efficiency, simultaneously playing the roles of passivating interface defect states, protecting the light absorption layer, inhibiting water molecules and oxygen from oxidizing and decomposing the battery, improving photoelectric conversion efficiency, and improving the stability of the perovskite battery. According to the different positions of the modification layer, the types of the modification layer can include four types: a modification layer between the hole transport layer and the electrode layer, a modification layer between the electron transport layer and the electrode layer, a modification layer between the hole transport layer and the perovskite layer, and a modification layer between the electron transport layer and the perovskite layer. The materials that can be used in the modification layer of the perovskite battery can include but are not limited to Cu2O, NiO, AZO, TiO2, etc.

[0111] It can be understood that the perovskite layer comprises a material with a chemical formula of ABX3 or A2CDX6. Wherein:

[0112] A is an inorganic or organic or organic-inorganic hybrid cation, which comprises at least one of an organic amine cation, a Cs cation, a K cation, a Rb cation and a Li cation; the organic amine cation is selected from (NR1R2R3R4) + , (R1R2N=CR3R4) + , (R1R2N-C(R5)=NR3R4)+ or (R1R2N-C(NR5R6)=R3R4) + wherein R1, R2, R3, R4, R5, and R6 are each independently selected from H, substituted or unsubstituted C1-20 alkyl, or substituted or unsubstituted aryl; A is optionally at least one of methylamine (CH3NH3 + )(MA + ), formamidinate (HC(NH2)2 + )(FA + ), cesium ion (Cs + ), and rubidium (Rb + ), further optionally methylamine (CH3NH3 + ) or formamidinate (HC(NH2)2 + ).

[0113] B is an inorganic or organic or organic-inorganic hybrid cation, including at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium, optionally at least one of divalent metal ions Pb 2+ and Sn 2+ .

[0114] C is an inorganic or organic or organic-inorganic hybrid cation, optionally a monovalent metal ion Ag + , etc.

[0115] D is an inorganic or organic or organic-inorganic hybrid cation, optionally a trivalent metal ion bismuth cation Bi 3+ , antimony cation Sb 3+ , indium cation In 3+ , etc.

[0116] X is an inorganic or organic or organic-inorganic hybrid anion, optionally one or more of halide anions and carboxylate anions, further optionally bromide (Br - ) or iodide (I - ).

[0117] In some embodiments, the perovskite layer has a thickness of 100 nm to 1000 nm. By way of example, the perovskite layer can have a thickness of, but not limited to, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range between any two of the aforementioned values.

[0118] In some embodiments, the perovskite layer has a band gap of 1.2 electron volts (eV) to 2.3 eV. As an example, the perovskite layer has a band gap of 1.2 eV, 1.3 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2 eV, 2.1 eV, 2.2 eV, 2.3 eV, or a range between any two of the aforementioned values. The perovskite layer has a higher visible light absorption efficiency when the band gap is within the aforementioned range.

[0119] In some embodiments, the material of the electron transport layer can include, but is not limited to, one or more of the following materials and derivatives thereof: imide compounds, quinone compounds, fullerene and derivatives thereof, methoxytriphenylamine-fluoroformamidine (OMeTPA-FA), calcium titanate (CaTiO3), lithium fluoride (LiF), calcium fluoride (CaF2), poly(3,4-ethylenedioxythiophene): polystyrene sulfonic acid (PEDOT:PSS), poly 3-hexylthiophene (P3HT), triptycene-core triphenylamine (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-phenylamino)carbazole-spirobifluorene (CzPAF-SBF), polythiophene, metal oxide, silicon oxide (SiO2), strontium titanate (SrTiO3), cuprous thiocyanate (CuSCN), etc.; wherein the metal element can include one or more of Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr.

[0120] In some embodiments, the material of the hole transport layer can include, but is not limited to, one or more of the following materials and derivatives thereof: 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), polytriazolamine (PTAA), nickel oxide (NiO x ), poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS), WO3, etc. Materials that can transport holes, block electrons.

[0121] The present application also provides a stacked battery. The stacked battery includes a top cell and a bottom cell stacked together; the top cell includes the solar cell described above.

[0122] Optionally, the stacked battery includes a perovskite-crystalline silicon stacked battery, a perovskite-perovskite stacked battery, a perovskite-heterojunction stacked battery, etc. It can be understood that the stacked battery can be a two-layer, three-layer, four-layer, or more-layer stacked battery. Further, the connection mode between the stacked batteries can be parallel or series connection.

[0123] Optionally, the solar cell further comprises a transparent substrate, the transparent substrate is located on the surface of the first electrode layer away from the perovskite layer, and the transparent substrate is farther away from the bottom cell than the functional layer. Taking the solar cell 10 shown in FIG. 1 as an example, the substrate 101 is a transparent substrate, and in the stacked cell, the substrate 101 is farther away from the bottom cell than the functional layer 102. It can be understood that, taking the solar cell 10 in FIG. 1 as an example, the solar cell 10 is inverted in the stacked cell, so that the substrate 101 is located above the functional layer 102. By introducing the above-mentioned solar cell in the stacked cell, the sunlight can be transmitted through the perovskite solar cell with a relatively high light transmittance, and thus the bottom cell can receive more sunlight, thereby improving the efficiency of the stacked cell. Optionally, the bottom cell comprises a silicon-based solar cell. Further optionally, the silicon-based solar cell comprises at least one of a crystalline silicon solar cell and a heterojunction solar cell.

[0124] The present application also provides a photovoltaic system. The photovoltaic system comprises at least one of the above-mentioned solar cell and the above-mentioned stacked cell.

[0125] The present application also provides a power generation device. The power generation device comprises at least one of the above-mentioned solar cell and the above-mentioned stacked cell. The type of the power generation device can include but is not limited to integrated power generation. The location of the power generation device can include but is not limited to the roof of a car, a backboard, and the like.

[0126] The present application also provides a power consumption device. The power consumption device comprises at least one of the above-mentioned solar cell and the above-mentioned stacked cell. Optionally, the power consumption device can include a mobile device such as a mobile phone, a notebook computer, and the like, an electric vehicle, an electric train, a ship, a satellite, a power generation system, and the like, but is not limited thereto.

[0127] In order to make the technical problems, technical solutions and beneficial effects solved by the present application clearer, the present application will be further described in detail below in conjunction with the embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way should be taken as any limitation on the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0128] Unless otherwise specified in the embodiments, the techniques or conditions are carried out according to the techniques or conditions described in the literature in the art or according to the product instructions. Unless otherwise specified, the reagents or instruments used are conventional products that can be obtained by purchase in the market.

[0129] Embodiment 1

[0130] The solar cell in the embodiment is a reverse perovskite solar cell.

[0131] The preparation method of the solar cell in the embodiment includes:

[0132] S101: Take a group of FTO conductive glass with a specification of 30 centimeters (cm) x 30 cm, etch away the areas of 0.5 cm on the opposite sides of the FTO conductive glass by using a laser marking machine, and then clean the FTO conductive glass by using a cleaning agent. After that, the FTO conductive glass is ultrasonically cleaned in deionized water, ethanol, and acetone for 10 minutes, respectively. After the ultrasonic cleaning is completed, the FTO conductive glass is dried by using nitrogen for use.

[0133] S102: The FTO conductive glass is subjected to ultraviolet ozone treatment, and then a nickel oxide layer with a thickness of 30 nm is magnetron sputtered at 1x10 -5 Torr, and annealed at 200 degrees Celsius for 30 minutes to obtain a hole transport layer.

[0134] S103: The hole transport layer and the FTO conductive glass are subjected to third scribing to obtain a third scribed groove, and then the product is placed into an ultrasonic cleaning device for cleaning for 1 minute and drying at 100 degrees Celsius for 10 minutes.

[0135] S104: A perovskite film with a thickness of 500 nm is coated on the surface of the hole transport layer away from the FTO conductive glass. After the film surface is continuously swept by using an air knife for 30 seconds, the film is transferred to a heating table and annealed at 100 degrees Celsius for 10 minutes to form a perovskite layer.

[0136] S105: By using a vacuum thermal evaporation coating process, C60 with a thickness of 50 nm and BCP with a thickness of 20 nm are sequentially evaporated at 1x10 -6 Torr to obtain an electron transport layer.

[0137] S106: ITO transparent electrodes with a thickness of 100 nm are magnetron sputtered at 1x10 -5 Torr, and then the ITO transparent electrodes, the electron transport layer, the perovskite layer, and the hole transport layer are subjected to second scribing to obtain a second scribed groove. After the second scribed groove is obtained, ITO transparent electrodes with a thickness of 100 nm are continuously sputtered to obtain a second electrode.

[0138] S107: By using a vacuum thermal evaporation coating process, copper grid lines with a thickness of 100 nm, a width of 0.1 mm, and a distance of 10 mm between adjacent copper grid lines are deposited on the ITO transparent electrodes at 1x10 -6 Torr by using a mask plate, the direction of the scribing of the copper grid lines is perpendicular to the direction of the scribing of the second scribed groove, and then first scribing is performed to obtain a first scribed groove, so that the perovskite solar cell forms a series connection structure.

[0139] Embodiments 2 to 4

[0140] Compared with Example 1, Examples 2-4 differ in thickness, width of the copper grid lines and distance between adjacent copper grid lines, as shown in Table 1.

[0141] Example 5

[0142] The solar cell in this example is a formal perovskite solar cell.

[0143] The preparation method of the solar cell in this example includes:

[0144] S101: Take a group of FTO conductive glass with a specification of 30cm x 30cm, etch away the area of 0.5cm on the opposite sides of the FTO conductive glass using a laser marking machine, clean the FTO conductive glass with a cleaning agent, and then ultrasonically clean the FTO conductive glass in deionized water, ethanol and acetone for 10 minutes, respectively. After ultrasonic cleaning, dry the FTO conductive glass with nitrogen for use.

[0145] S102: Ultraviolet ozone treat the FTO conductive glass, and then coat a tin oxide nanoparticle dispersion liquid with a concentration of 20%, and anneal at 100°C for 30 minutes to obtain an electron transport layer.

[0146] S103: Thirdly scribe the electron transport layer and the FTO conductive glass to obtain a third scribed groove, and then put the product into an ultrasonic cleaning device, clean for 1 minute, and dry at 100°C for 10 minutes.

[0147] S104: Coat a perovskite thin film with a thickness of 500nm on the surface of the electron transport layer away from the FTO conductive glass, and then transfer the thin film to a heating table after continuously blowing the film surface with an air knife for 30s, and anneal at 100°C for 10 minutes to form a perovskite layer.

[0148] S105: Coat a Spiro-OMeTAD hole transport layer with a thickness of 50nm on top of the perovskite layer.

[0149] S106: Sputter a 100nm-thick ITO transparent electrode under a pressure of 1x10 -5 Torr, and then secondly scribe the ITO transparent electrode, the hole transport layer, the perovskite layer and the electron transport layer to obtain a second scribed groove. Continue to sputter a 100nm-thick ITO transparent electrode to obtain a second electrode after obtaining the second scribed groove.

[0150] S107: Use a vacuum thermal evaporation coating process, use a mask plate, and sputter a 100nm-thick ITO transparent electrode under a pressure of 1x10 -6Copper grid lines with a thickness of 100 nm, a width of 0.1 mm and a distance between adjacent copper grid lines of 10 mm were deposited on the ITO transparent electrode under 1x10-4Torr, perpendicular to the scribing direction of the second scribing groove, and then first scribing was performed to obtain a first scribing groove, so that the perovskite solar cell formed a series structure.

[0151] Examples 6-8

[0152] Compared with Example 1, Examples 6-8 differ in that the thickness, width and distance between adjacent copper grid lines of the copper grid lines are different, as shown in Table 1.

[0153] Comparative Example 1

[0154] The solar cell in the present comparative example is a reverse perovskite solar cell.

[0155] The preparation method of the solar cell in the present comparative example comprises:

[0156] S101: Take a group of FTO conductive glass with a specification of 30 cm x 30 cm, etch away the area of 0.5 cm on the opposite sides of the FTO conductive glass with a laser marking machine, and then clean the FTO conductive glass with a cleaning agent. After cleaning, the FTO conductive glass is ultrasonically cleaned in deionized water, ethanol and acetone for 10 minutes, respectively. After ultrasonic cleaning, the FTO conductive glass is dried with nitrogen for use.

[0157] S102: The FTO conductive glass is subjected to ultraviolet ozone treatment, and then a layer of nickel oxide with a thickness of 30 nm is magnetron sputtered under 1x10-4Torr. The hole transport layer is obtained by annealing at 200°C for 30 min. -5 Torr, and the hole transport layer is obtained by annealing at 200°C for 30 min.

[0158] S103: The hole transport layer and the FTO conductive glass are subjected to third scribing to obtain a third scribing groove, and then the product is placed in an ultrasonic cleaning device for cleaning for 1 min and drying at 100°C for 10 min.

[0159] S104: A perovskite film with a thickness of 500 nm is coated on the surface of the hole transport layer away from the FTO conductive glass. After the film surface is continuously blown for 30 s by an air knife, the film is transferred to a heating table and annealed at 100°C for 10 min to form a perovskite layer.

[0160] S105: A vacuum thermal evaporation coating process is used to sequentially evaporate C60 with a thickness of 50 nm and BCP with a thickness of 20 nm under 1x10-4Torr to obtain an electron transport layer. -6 Torr, and the hole transport layer is obtained by annealing at 200°C for 30 min.

[0161] S106: A layer of gold with a thickness of 100 nm is evaporated on the surface of the perovskite layer under 1x10-4Torr. -5Sputtering ITO transparent electrode with a thickness of 100 nm under 5×10

[0162] S107: First scribe the product to obtain a first scribe groove, so that the perovskite solar cell forms a series structure.

[0163] Comparative Example 2

[0164] The solar cell in the present comparative example is a formal perovskite solar cell.

[0165] The preparation method of the solar cell in the present comparative example comprises:

[0166] S101: Take a group of FTO conductive glass with a size of 30 cm x 30 cm, etch away the area of 0.5 cm on the opposite sides of the FTO conductive glass with a laser marking machine, and then clean the FTO conductive glass with a cleaning agent. After cleaning, the FTO conductive glass is ultrasonically cleaned in deionized water, ethanol and acetone for 10 minutes, respectively. After ultrasonic cleaning, the FTO conductive glass is dried with nitrogen for use.

[0167] S102: The FTO conductive glass is treated with ultraviolet ozone, and then a tin oxide nanoparticle dispersion solution with a concentration of 20% is coated. The product is annealed at 100°C for 30 minutes to obtain an electron transport layer.

[0168] S103: Third scribe the electron transport layer and the FTO conductive glass to obtain a third scribe groove, and then place the product in an ultrasonic cleaning device and clean it for 1 minute. Dry the product at 100°C for 10 minutes.

[0169] S104: Coat a perovskite film with a thickness of 500 nm on the surface of the electron transport layer away from the FTO conductive glass. After continuously blowing the film surface with an air knife for 30 seconds, transfer the film to a heating table and anneal it at 100°C for 10 minutes to form a perovskite layer.

[0170] S105: Coat a Spiro-OMeTAD hole transport layer with a thickness of 50 nm on top of the perovskite layer.

[0171] S106: Coat a layer of ITO transparent electrode with a thickness of 100 nm on the surface of the Spiro-OMeTAD hole transport layer under 5×10 -5 Sputtering ITO transparent electrode with a thickness of 100 nm under 5×10

[0172] S107: First scribing is performed on the product to obtain a first scribing groove, so that the perovskite solar cell forms a series structure.

[0173] Test Example

[0174] The solar cells obtained in the examples and comparative examples were subjected to photoelectric conversion efficiency testing, and the testing method was as follows:

[0175] The photoelectric conversion efficiency of the perovskite solar cell was tested under standard testing conditions (total irradiance 100 milliwatts per square centimeter (mW / cm 2 ), the temperature of the battery being tested was 25℃, and the spectral distribution was AM1.5G) using a solar simulator, and readings were recorded using a JISSO 2400 series digital multimeter. The photoelectric conversion efficiency of the perovskite solar cell was calculated as follows: PCE = P OUT / P OPT = V OC ×J SC ×(V MPP ×J MPP ) / (V OC ×J SC ) / P IN = V OC ×J SC ×FF / P IN

[0176] wherein P OUT , P IN , V MPP (V), J MPP (mA / cm 2 ), V OC (V), and J SC (mA / cm 2 ) are the output power of the solar cell, the incident light power, the maximum power point voltage of the battery, the maximum power point current of the battery, the open circuit voltage, and the short circuit current, respectively. P OUT , P IN , V MPP (V), J MPP (mA / cm 2 ), V OC (V), and J SC (mA / cm 2 ) were obtained by digital multimeter. The results are shown in Table 1.

[0177] Table 1

[0178] As can be seen from Table 1, it can be seen from Examples 1 to 4 compared with Comparative Example 1 that in the trans battery structure, the introduction of copper grid lines can improve the photoelectric conversion efficiency of the battery. Examples 5 to 8 compared with Comparative Example 2 can see that in the formal battery structure, the introduction of copper grid lines can improve the photoelectric conversion efficiency of the battery.

[0179] The technical features of the above-described embodiments can be combined in any manner. For the sake of brevity, not all possible combinations of the technical features in the above-described embodiments are described, however, as long as the combination of the technical features does not result in a contradiction, it should be considered within the scope of the present disclosure.

[0180] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the present application. It should be noted that for those skilled in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application patent should be subject to the appended claims.

Claims

1. A solar cell, comprising a functional layer; The functional layer comprises a first electrode layer, a perovskite layer and a second electrode layer arranged in sequence; A first scribe groove is provided in the functional layer, the first scribe groove penetrates the second electrode layer to separate the second electrode layer into a plurality of second electrode sub-layers, and the first scribe groove divides the functional layer into a plurality of functional sub-layers; A second scribe groove is provided in the functional sub-layer, the second scribe groove penetrates the perovskite layer and separates the perovskite layer in the functional sub-layer into an effective area and an ineffective area; The functional sub-layer further comprises a conductive enhancement layer, the conductive enhancement layer is located on at least one side of the second electrode sub-layer; The conductive enhancement layer comprises a plurality of first metal grid lines arranged at intervals, and the plurality of first metal grid lines are located in the effective area.

2. The solar cell of claim 1, wherein, The groove bottom and groove wall of the second scribe groove are covered with the second electrode sub-layer.

3. The solar cell according to claim 1 or 2, wherein The first metal grid line satisfies one or more of the following characteristics (1) to (3): (1) The width of the first metal grid line is 0.001mm-10mm; (2) The thickness of the first metal grid line is 50nm-200nm; (3) The distance between adjacent first metal grid lines is 0.1mm-30mm.

4. The solar cell according to any one of claims 1 to 3, wherein The first metal grid line intersects the scribe direction of the second scribe groove.

5. The solar cell of claim 4, wherein, The first metal grid line is perpendicular to the scribe direction of the second scribe groove.

6. The solar cell according to any one of claims 1 to 5, wherein The conductive enhancement layer further comprises a plurality of second metal grid lines and a plurality of third metal grid lines arranged at intervals, the plurality of second metal grid lines are located on the groove bottom of the second scribe groove, the plurality of third metal grid lines are located on the groove wall of the second scribe groove, and the plurality of second metal grid lines are connected to the plurality of first metal grid lines one by one through the plurality of third metal grid lines.

7. The solar cell of claim 6, wherein, The second metal grid line satisfies one or more of the following characteristics (1) to (4): (1) The included angle between the second metal grid line and the scribe direction of the second scribe groove is greater than 0° and less than or equal to 90°; (2) The width of the second metal grid line is 0.001mm-10mm; (3) The thickness of the second metal grid line is 50nm-200nm; (4) The distance between adjacent second metal grid lines is 0.1mm-30mm.

8. The solar cell according to claim 6 or 7, wherein The third metal grid line satisfies one or more of the following characteristics (1) to (4): (1) The included angle between the third metal grid line and the groove bottom of the second scribe groove is greater than 0° and less than or equal to 90°; (2) The width of the third metal grid line is 0.001mm-10mm; (3) The thickness of the third metal grid line is 50nm-200nm; (4) The distance between adjacent third metal grid lines is 0.1mm-30mm.

9. The solar cell according to any one of claims 1 to 5, wherein The conductive enhancement layer further comprises a metal layer and a plurality of fourth metal grid lines arranged at intervals, the metal layer covers the groove bottom of the second scribe groove, the plurality of fourth metal grid lines are located on the groove wall of the second scribe groove, the plurality of fourth metal grid lines correspond to the plurality of first metal grid lines one by one, and the metal layer is connected to the first metal grid lines through the fourth grid lines.

10. The solar cell of claim 9, wherein, The thickness of the metal layer is 50-200 nm.

11. The solar cell according to claim 9 or 10, wherein The fourth metal grid lines satisfy one or more of the following characteristics (1)-(4): (1) the fourth metal grid lines form an angle greater than 0° and less than or equal to 90° with the groove bottom of the second scribe groove; (2) the width of the fourth metal grid lines is 0.001-10 mm; (3) the thickness of the fourth metal grid lines is 50-200 nm; (4) the distance between adjacent fourth metal grid lines is 0.1-30 mm.

12. The solar cell according to any one of claims 1 to 11, wherein The functional sublayer further comprises a third scribe groove, the third scribe groove penetrates the first electrode layer, the third scribe groove separates the first electrode layer into a plurality of first electrode sublayers, and the active area is arranged on two adjacent first electrode sublayers.

13. The solar cell according to any one of claims 1 to 12, wherein The functional layer further comprises a charge transport layer, the charge transport layer comprises a hole transport layer and an electron transport layer, one of the hole transport layer and the electron transport layer is located between the first electrode layer and the perovskite layer, and the other is located between the perovskite layer and the second electrode layer.

14. The solar cell according to any one of claims 1 to 13, wherein, The solar cell further comprises an encapsulation layer, the encapsulation layer is located on the surface of the second electrode layer away from the perovskite layer, and the encapsulation layer fills at least part of the first scribe groove and at least part of the second scribe groove.

15. The solar cell of claim 14, wherein, The conductive enhancement layer is located between the second electrode sublayer and the perovskite layer.

16. The solar cell of claim 15, wherein, The second electrode sublayer and the perovskite layer have a charge transport layer therebetween, and the conductive enhancement layer is located between the second electrode sublayer and the charge transport layer.

17. A stacked battery comprising a top battery and a bottom battery arranged in layers; the top battery comprises the solar cell of any one of claims 1-16.

18. The stacked battery of claim 17, wherein, The solar cell further comprises a transparent substrate, the transparent substrate is located on the surface of the first electrode layer away from the perovskite layer, and the transparent substrate is farther away from the bottom battery than the functional layer.

19. The stacked battery of claim 17 or 18, wherein, The bottom battery comprises a silicon-based solar cell.

20. A photovoltaic system comprising at least one of the solar cell of any one of claims 1-16 and the stacked battery of any one of claims 17-19.

21. A power generation device comprising at least one of the solar cell of any one of claims 1-16 and the stacked battery of any one of claims 17-19.

22. An electric device comprising at least one of the solar cell of any one of claims 1-16 and the stacked battery of any one of claims 17-19.

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