High-frequency circuit and communication device

Abstract

A high-frequency circuit (1) comprises: power amplifiers (11, 12); a power supply voltage terminal (123) that supplies a power supply voltage (Vcc2) to the power amplifiers (11, 12); an inductor (61) that is connected between the power supply voltage terminal (123) and the output terminal of the power amplifier (11) and between the power supply voltage terminal (123) and the output terminal of the power amplifier (12); and an inductor (62) that is connected between the power supply voltage terminal (123) and the output terminal of the power amplifier (11) but not connected between the power supply voltage terminal (123) and the output terminal of the power amplifier (12).

Description

High frequency circuits and communication devices

[0001] The present invention relates to a high-frequency circuit and a communication device.

[0002] In mobile communication devices such as mobile phones, the advancement of multi-band operation and increased output power have led to the need for multiple power amplifiers, resulting in larger front-end circuits. For example, Patent Document 1 discloses a Doherty amplifier equipped with a carrier amplifier and a peak amplifier.

[0003] Japanese Patent Application Laid-Open No. 2022-174987

[0004] In particular, in conventional high-frequency circuits, it is difficult to reduce the size of the high-frequency circuit due to the circuit components connected to the path that supplies the power supply voltage to the multiple power amplifiers.

[0005] Therefore, the present invention provides a high-frequency circuit and a communication device that can be miniaturized.

[0006] A high-frequency circuit according to one aspect of the present invention includes a first power amplifier and a second power amplifier, a power supply voltage terminal that supplies a power supply voltage to the first power amplifier and the second power amplifier, a first inductor connected between the power supply voltage terminal and an output terminal of the first power amplifier and between the power supply voltage terminal and the output terminal of the second power amplifier, and a second inductor connected between the power supply voltage terminal and the output terminal of the first power amplifier but not connected between the power supply voltage terminal and the output terminal of the second power amplifier.

[0007] A communication device according to one aspect of the present invention comprises a signal processing circuit configured to process a high-frequency signal, and the high-frequency circuit configured to transmit the high-frequency signal between the signal processing circuit and an antenna.

[0008] According to the present invention, it is possible to achieve miniaturization of high frequency circuits and communication devices.

[0009] FIG. 1 is a circuit configuration diagram of a communication device according to a first embodiment. FIG. 2 is a plan view of the high-frequency circuit according to the first embodiment. FIG. 3A is a plan view of an inductor on a first layer of a module substrate according to the first embodiment. FIG. 3B is a plan view of an inductor on a second layer of the module substrate according to the first embodiment. FIG. 3C is a plan view of an inductor on a third layer of the module substrate according to the first embodiment. FIG. 3D is a plan view of an inductor on a fourth layer of the module substrate according to the first embodiment. FIG. 4 is a circuit configuration diagram of a communication device according to a second embodiment. FIG. 5 is a graph showing the frequency characteristics of forward voltage gain when viewed from the output end of a first power amplifier to the power supply voltage terminal in the high-frequency circuit 1 according to the second embodiment. FIG. 6 is a graph showing the frequency characteristics of forward voltage gain when viewed from the output end of a second power amplifier to the power supply voltage terminal in the high-frequency circuit 1 according to the second embodiment.

[0010] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the embodiments described below are all comprehensive or specific examples. The numerical values, shapes, materials, components, arrangements and connection forms of the components shown in the following embodiments are merely examples and are not intended to limit the present invention.

[0011] It should be noted that the drawings are schematic diagrams in which emphasis, omission, or adjustment of proportions has been appropriately made to illustrate the present invention, and are not necessarily strictly illustrated, and may differ from the actual shapes, positional relationships, and proportions. In the drawings, the same reference numerals are used to denote substantially the same components, and redundant explanations may be omitted or simplified.

[0012] In the following drawings, the x-axis and y-axis are axes that are perpendicular to each other on a plane parallel to the main surface of the substrate, and the z-axis is an axis perpendicular to the main surface of the substrate, with its positive direction indicating the upward direction and its negative direction indicating the downward direction.

[0013] In the following description, "connected" includes not only direct connection by connection terminals and / or wiring conductors, but also electrical connection via other circuit elements. "Connected between A and B" means connected to both A and B between A and B, and arranged in series on the path connecting A and B. "C is connected between A and B" means one end of C is connected to A and the other end of C is connected to B, and C is arranged in series on the path connecting A and B. "Path connecting A and B" means a path made up of conductors electrically connecting A to B.

[0014] "The power amplifier operates" means that the power amplifier is controlled to an on state (i.e., a state in which the power amplifier can amplify high-frequency signals). Specifically, "the power amplifier operates" means that a bias current is supplied to the power amplifier, causing the power amplifier to amplify high-frequency signals. On the other hand, "the power amplifier does not operate" means that the power amplifier is controlled to an off state (i.e., a state in which the power amplifier cannot amplify high-frequency signals). Specifically, "the power amplifier does not operate" means that a bias current is not supplied to the power amplifier, causing the power amplifier to not amplify high-frequency signals.

[0015] The "filter passband" is the portion of the frequency spectrum transmitted by the filter and is defined as the frequency band between two frequencies 3 dB above the minimum power insertion loss. The passband of a high-pass filter is defined as the frequency range above the frequency 3 dB above the minimum power insertion loss. The passband of a low-pass filter is defined as the frequency range below the frequency 3 dB above the minimum power insertion loss.

[0016] The term "transmission band" refers to a frequency band used for transmission in a communication device, and the term "reception band" refers to a frequency band used for reception in a communication device. For example, in a frequency division duplex (FDD) band, different frequency bands (uplink band and downlink band) are used as the transmission band and the reception band. For example, in a time division duplex (TDD) band, the same frequency band is used as the transmission band and the reception band.

[0017] "Terminal" means a point where a conductor within an element terminates. Note that terminal is interpreted as any point on the conductor between elements or the entire conductor, not just a single point, provided the impedance of the conductor between elements is sufficiently low.

[0018] The phrase "a component is disposed on a substrate" includes a component being disposed on the main surface of the substrate and a component being disposed within the substrate. The phrase "a component is disposed on the main surface of the substrate" includes a component being disposed in contact with the main surface of the substrate, as well as a component being disposed above the main surface without contacting the main surface (for example, a component being stacked on another component disposed in contact with the main surface). The phrase "a component is disposed on the main surface of the substrate" may also include a component being disposed in a recess formed in the main surface. The phrase "a component is disposed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely disposed between the two main surfaces of the substrate but partially not covered by the substrate, and a component being partially disposed within the substrate.

[0019] "A is located between B and C" means that at least one of multiple line segments connecting any point in B and any point in C passes through A. "A is located farther from C than B" means that the distance between A and C is longer than the distance between B and C. Here, "the distance between A (B) and C" means the length of the shortest line segment (i.e., the shortest distance) of multiple line segments connecting any point on the surface of A (B) and any point on the surface of C.

[0020] "Planar view of the module substrate" means that an object is viewed by orthogonally projecting it onto the xy plane in the negative direction of the z axis. "A overlaps with B in the planar view of the module substrate" means that the area of ​​A orthogonally projected onto the xy plane overlaps with the area of ​​B orthogonally projected onto the xy plane.

[0021] Furthermore, terms indicating the relationship between elements, such as "parallel" and "perpendicular," terms indicating the shape of elements, such as "straight line," and numerical ranges do not only represent the strict meaning, but also include a substantially equivalent range, for example, an error of a few percent.

[0022] (First Embodiment) A first embodiment will be described below.

[0023] [1.1. Circuit Configuration of Communication Device 5] First, the circuit configuration of the communication device 5 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a circuit configuration diagram of the communication device 5 according to this embodiment.

[0024] 1 is an exemplary configuration, and communication device 5 may be implemented using any of a wide variety of circuit implementations and circuit technologies, and therefore the description of communication device 5 provided below should not be construed as limiting.

[0025] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE in a cellular network (also called a mobile network), such as a mobile phone, a smartphone, a tablet computer, or a wearable device. In another example, the communication device 5 can be implemented to provide wireless connectivity to Internet of Things (IoT) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (also called drones), and automated guided vehicles (AGVs). In yet another example, the communication device 5 can be implemented to provide wireless connectivity in a wireless access point or a wireless hotspot.

[0026] The communication device 5 includes a high-frequency circuit 1, antennas 2a and 2b, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0027] The high-frequency circuit 1 can transmit high-frequency signals between the antennas 2a and 2b and the RFIC 3. The circuit configuration of the high-frequency circuit 1 will be described later.

[0028] The antennas 2a and 2b are connected to the high-frequency circuit 1. The antennas 2a and 2b can receive high-frequency signals from the high-frequency circuit 1 and transmit them to the outside of the communication device 5. Furthermore, the antennas 2a and 2b may receive high-frequency signals from the outside of the communication device 5 and supply them to the high-frequency circuit 1. Note that some or all of the antennas 2a and 2b may not be included in the communication device 5. Furthermore, the communication device 5 may include one or more antennas in addition to the antennas 2a and 2b.

[0029] The RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, the RFIC 3 can perform signal processing on a transmission signal input from the BBIC 4 by up-conversion or the like, and output the high-frequency transmission signal generated by the signal processing to the high-frequency circuit 1. Furthermore, the RFIC 3 can perform signal processing on a high-frequency reception signal input via the high-frequency circuit 1 by down-conversion or the like, and output the reception signal generated by the signal processing to the BBIC 4. The RFIC 3 can also have a control unit that controls switches, amplifiers, and the like included in the high-frequency circuit 1. Note that part or all of the functions of the RFIC 3 as a control unit may be included outside the RFIC 3, and may be included in, for example, the BBIC 4 or the high-frequency circuit 1.

[0030] The BBIC 4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signal transmitted by the high-frequency circuit 1. The signals processed by the BBIC 4 include, for example, image signals for image display and / or audio signals for calls via a speaker. The BBIC 4 does not necessarily have to be included in the communication device 5.

[0031] [1.2. Circuit Configuration of High-Frequency Circuit 1] Next, the circuit configuration of the high-frequency circuit 1 according to this embodiment will be described with reference to Fig. 1. Note that Fig. 1 is an exemplary circuit configuration, and the high-frequency circuit 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency circuit 1 provided below should not be interpreted in a limiting manner.

[0032] The high frequency circuit 1 includes power amplifiers 11 and 12, filters 31 and 32, inductors 51, 53, 54, 61 and 62, capacitors 52, 55 and 63, antenna connection terminals 101 and 102, high frequency input terminals 111 and 112, and power supply voltage terminals 121, 122 and 123.

[0033] Antenna connection terminals 101 and 102 are external connection terminals of the high-frequency circuit 1. The antenna connection terminals 101 and 102 are connected to antennas 2a and 2b, respectively, outside the high-frequency circuit 1, and are connected to filters 31 and 32, respectively, inside the high-frequency circuit 1.

[0034] The radio frequency input terminals 111 and 112 are external connection terminals of the radio frequency circuit 1 and are terminals for receiving radio frequency signals from the RFIC 3. The radio frequency input terminals 111 and 112 are connected to the RFIC 3 outside the radio frequency circuit 1 and connected to the power amplifiers 11 and 12 inside the radio frequency circuit 1, respectively.

[0035] The power supply voltage terminals 121 to 123 are external connection terminals of the high-frequency circuit 1 and are terminals for receiving a power supply voltage from a power supply circuit (not shown). The power supply voltage terminals 121 to 123 are connected to the power supply circuit outside the high-frequency circuit 1. The power supply voltage terminal 121 is connected to the power amplifier 11 inside the high-frequency circuit 1 and supplies a power supply voltage Vcc1 to the power amplifier 11. The power supply voltage terminal 122 is connected to the power amplifier 12 inside the high-frequency circuit 1 and supplies a power supply voltage Vcc1 to the power amplifier 12. The power supply voltage terminal 123 is connected to the power amplifiers 11 and 12 inside the high-frequency circuit 1 and supplies a power supply voltage Vcc2 to the power amplifiers 11 and 12. The power supply voltage terminals 121 and 122 may be integrated into a single terminal.

[0036] The power amplifier 11 is an example of a first power amplifier and is connected between the high frequency input terminal 111 and the filter 31. The power amplifier 11 is a multi-stage amplifier and includes amplifiers T11 and T12. The power amplifier 11 is included in the integrated circuit 71.

[0037] The amplifier T11 is a pre-stage amplifier (sometimes called a driver stage amplifier) ​​and is connected between the radio frequency input terminal 111 and the amplifier T12. Specifically, the input terminal of the amplifier T11 is connected to the radio frequency input terminal 111, and the output terminal of the amplifier T11 is connected to the input terminal of the amplifier T12. The amplifier T11 can amplify the radio frequency signal of band A supplied from the RFIC 3 via the radio frequency input terminal 111, using a power supply voltage Vcc1 supplied from the power supply circuit via a power supply voltage terminal 121.

[0038] The amplifier T12 is a post-stage amplifier (sometimes called a power stage amplifier) ​​and is connected between the amplifier T11 and the filter 31. Specifically, the input terminal of the amplifier T12 is connected to the output terminal of the amplifier T11, and the output terminal of the amplifier T12 is connected to the filter 31. The amplifier T12 can amplify the high-frequency signal of band A amplified by the amplifier T11, using a power supply voltage Vcc2 supplied from the power supply circuit via a power supply voltage terminal 123.

[0039] The power amplifier 12 is an example of a second power amplifier and is connected between the high frequency input terminal 112 and the filter 32. The power amplifier 12 is a multi-stage amplifier and includes amplifiers T21, T22, and T23. The power amplifier 12 is included in the integrated circuit 72.

[0040] The amplifiers T21 and T22 are pre-stage amplifiers (sometimes called driver stage amplifiers) and are connected between the radio frequency input terminal 112 and the amplifier T23. Specifically, the input terminal of the amplifier T21 is connected to the radio frequency input terminal 112, and the output terminal of the amplifier T21 is connected to the input terminal of the amplifier T22. The input terminal of the amplifier T22 is connected to the output terminal of the amplifier T21, and the output terminal of the amplifier T22 is connected to the input terminal of the amplifier T23. The amplifiers T21 and T22 can amplify the radio frequency signal of band B supplied from the RFIC 3 via the radio frequency input terminal 112 using the power supply voltage Vcc1 supplied from the power supply circuit via the power supply voltage terminal 122.

[0041] The amplifier T23 is a post-stage amplifier (sometimes called a power stage amplifier) ​​and is connected between the amplifier T22 and the filter 32. Specifically, the input terminal of the amplifier T23 is connected to the output terminal of the amplifier T22, and the output terminal of the amplifier T23 is connected to the filter 32. The amplifier T23 can amplify the high-frequency signal of band B amplified by the amplifiers T21 and T22, using a power supply voltage Vcc2 supplied from the power supply circuit via a power supply voltage terminal 123.

[0042] The filter 31 is an example of a first filter, and is a low-pass filter having a passband that includes the transmission band of band A. Note that the filter 31 is not limited to a low-pass filter. For example, the filter 31 may be a band-pass filter. The filter 31 is connected between the power amplifier 11 and the antenna connection terminal 101. The filter 31 is capable of passing signals within the transmission band of band A and attenuating signals outside the transmission band of band A (for example, signals within the transmission band of band B). Note that the filter 31 does not have to be included in the high-frequency circuit 1.

[0043] The filter 32 is an example of a second filter, and is a high-pass filter having a passband that includes the transmission band of band B. The filter 32 is not limited to a high-pass filter. For example, the filter 32 may be a band-pass filter. The filter 32 is connected between the power amplifier 12 and the antenna connection terminal 102. The filter 32 is capable of passing signals within the transmission band of band B and attenuating signals outside the transmission band of band B (for example, signals within the transmission band of band A). The filter 32 does not have to be included in the high-frequency circuit 1.

[0044] Bands A and B are frequency bands for communication systems built using radio access technologies (RATs). Bands A and B are predefined by standardization organizations (e.g., 3GPP (registered trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)). Examples of communication systems include 2G GSM (2nd Generation Global System for Mobile communications) systems, 4G LTE (4th Generation Long Term Evolution) systems, and 5GNR (5th Generation New Radio) systems.

[0045] Band A is an example of a first band, and is lower than Band B. Band A can be a frequency band included in the low band of 2G GSM (for example, GSM700, GSM800, GSM900, etc.). Note that Band A is not limited to these frequency bands.

[0046] Band B is an example of a second band, and is higher than Band A. Band B can be a frequency band included in the mid-band of 2G GSM (for example, GSM1800, GSM1900, etc.). Note that Band B is not limited to these frequency bands.

[0047] The inductor 51 is a so-called choke inductor, and is connected between the power supply voltage terminal 121 and the amplifier T11. Specifically, one end of the inductor 51 is connected to the power supply voltage terminal 121, and the other end of the inductor 51 is connected to the output terminal of the amplifier T11. The inductor 51 can suppress leakage of the band A transmission signal to the power supply voltage terminal 121.

[0048] The capacitor 52 is a so-called bypass capacitor, and is connected between the ground and a path connecting the power supply voltage terminal 121 and the inductor 51. Specifically, one end of the capacitor 52 is connected to the path connecting the power supply voltage terminal 121 and the inductor 51, and the other end of the capacitor 52 is connected to the ground. The capacitor 52 can suppress fluctuations in the power supply voltage Vcc1.

[0049] Inductors 53 and 54 are so-called choke inductors, and are connected between the power supply voltage terminal 122 and the amplifiers T21 and T22, respectively. Specifically, one end of inductor 53 is connected to the power supply voltage terminal 122, and the other end of inductor 53 is connected to the output terminal of amplifier T21. One end of inductor 54 is connected to the power supply voltage terminal 122, and the other end of inductor 54 is connected to the output terminal of amplifier T22. Inductors 53 and 54 can suppress leakage of the band B transmission signal to the power supply voltage terminal 122.

[0050] Capacitor 55 is a so-called bypass capacitor, and is connected between ground and a path connecting power supply voltage terminal 122 and inductors 53 and 54. Specifically, one end of capacitor 55 is connected to the path connecting power supply voltage terminal 122 and inductors 53 and 54, and the other end of capacitor 55 is connected to ground. Capacitor 55 can suppress fluctuations in power supply voltage Vcc1.

[0051] Inductor 61 is an example of a first inductor, and is a so-called choke inductor. Inductor 61 is connected between power supply voltage terminal 123 and power amplifier 11, and between power supply voltage terminal 123 and power amplifier 12. Specifically, one end of inductor 61 is connected to power supply voltage terminal 123, and the other end of inductor 61 is connected to the output terminal of power amplifier 11 via inductor 62, and is connected to the output terminal of power amplifier 12 without via inductor 62. Inductor 61 can suppress leakage of transmission signals of bands A and B to the power supply voltage terminal 123.

[0052] Inductor 62 is an example of a second inductor, and is a so-called choke inductor. Inductor 62 is connected between power supply voltage terminal 123 and power amplifier 11, but is not connected between power supply voltage terminal 123 and power amplifier 12. Specifically, one end of inductor 62 is connected to power supply voltage terminal 123 via inductor 61, and the other end of inductor 62 is connected to the output terminal of power amplifier 11, but is not connected to the output terminal of power amplifier 12. Inductor 62 can suppress leakage of the band A transmission signal to power supply voltage terminal 123.

[0053] The capacitor 63 is a so-called bypass capacitor, and is connected between the ground and a path connecting the power supply voltage terminal 123 and the inductor 61. Specifically, one end of the capacitor 63 is connected to the path connecting the power supply voltage terminal 123 and the inductor 61, and the other end of the capacitor 63 is connected to the ground. The capacitor 63 can suppress fluctuations in the power supply voltage Vcc2.

[0054] [1.3. Mounting Example of High-Frequency Circuit 1] Next, a mounting example of the high-frequency circuit 1 configured as above will be described with reference to Fig. 2. Fig. 2 is a plan view of the high-frequency circuit 1 according to this embodiment. Note that in Fig. 2, some components are labeled with letters to facilitate understanding of the relative positions of the components, but the actual components do not necessarily need to be labeled with these letters.

[0055] 2 illustrates an exemplary implementation of the high frequency circuit 1, and the high frequency circuit 1 may be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high frequency circuit 1 provided below should not be construed as limiting.

[0056] The high-frequency circuit 1 includes a module substrate 90 in addition to the multiple circuit components shown in FIG. 1 . The module substrate 90 has a main surface 90a and a main surface (not shown) opposite the main surface 90a. Wiring, via conductors, and the like are formed within the module substrate 90 and on the main surface 90a. Note that multiple external connection terminals (not shown) connected to input / output terminals and ground terminals of a motherboard (not shown) are arranged on the main surface of the module substrate 90 opposite the main surface 90a. These multiple external connection terminals include antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, power supply voltage terminals 121 to 123, and a ground terminal.

[0057] The module substrate 90 may be, for example, a low temperature co-fired ceramics (LTCC) substrate or a high temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board, but is not limited to these.

[0058] The integrated circuit 71 (LB PA) including the power amplifier 11 and the integrated circuit 72 (MB PA) including the power amplifier 12 are each a semiconductor integrated circuit and are disposed on the main surface 90a of the module substrate 90. The semiconductor material of the integrated circuits 71 and 72 can be, for example, silicon germanium (SiGe) or gallium arsenide (GaAs). In this case, some or all of the amplifying transistors included in the power amplifiers 11 and 12 can be configured as heterojunction bipolar transistors (HBTs). Gallium nitride (GaN) or silicon carbide (SiC) can also be used as the semiconductor material of the integrated circuits 71 and 72. In this case, some or all of the amplifying transistors included in the power amplifiers 11 and 12 can be configured as high electron mobility transistors (HEMTs) or metal-semiconductor field effect transistors (MESFETs). Single crystal silicon (Si) can also be used as the semiconductor material of the integrated circuits 71 and 72. In this case, some or all of the multiple amplifying transistors included in the power amplifiers 11 and 12 may be configured with a complementary metal oxide semiconductor (CMOS) or may be manufactured by an SOI (silicon on insulator) process. Each of the integrated circuits 71 and 72 may be divided into multiple integrated circuits. Furthermore, the integrated circuits 71 and 72 may be integrated into a single integrated circuit.

[0059] The filters 31 and 32 are disposed on the main surface 90a of the module substrate 90. The filters 31 and 32 are LC filters including one or more inductors (L) and one or more capacitors (C). The filters 31 and / or 32 may be any of a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) filter, an LC filter, and a dielectric filter, or any combination thereof.

[0060] The inductors 51, 53, and 54 are configured by wiring formed on the module substrate 90. The inductors 51, 53, and 54 may be chip inductors. A chip inductor refers to a surface mount device (SMD) that configures an inductor. The inductors 51, 53, and 54 may also be included in an integrated passive device (IPD).

[0061] The capacitors 52 and 55 are mounted as chip capacitors on the main surface 90a of the module substrate 90. The chip capacitor refers to an SMD that constitutes a capacitor. However, the capacitors 52 and 55 are not limited to chip capacitors. For example, some or all of the capacitors 52 and 55 may be included in the IPD, or may be configured as wiring formed on the module substrate 90.

[0062] The inductors 61 and 62 are configured by wiring formed on multiple layers of the module substrate 90. The detailed configuration of the inductors 61 and 62 will be described later with reference to the drawings.

[0063] The capacitor 63 is mounted as a chip capacitor on the main surface 90a of the module substrate 90. In this mounting example, the capacitor 63 is disposed on the winding axis of the inductors 61 and 62. Note that the capacitor 63 is not limited to a chip capacitor. For example, the capacitor 63 may be included in the IPD, or may be configured as wiring formed on the module substrate 90.

[0064] In this implementation example, the components on the main surface 90a of the module substrate 90 may be covered with a resin member. This ensures reliability, such as mechanical strength and moisture resistance, of the components on the main surface 90a. Furthermore, at least a portion of the surface of the resin member may be covered with a metal shielding layer. This prevents external noise from entering the electronic components that make up the high-frequency circuit 1 and prevents noise generated in the high-frequency circuit 1 from interfering with other modules or other devices.

[0065] [1.4. Mounting Examples of Inductors 61 and 62] Here, mounting examples of inductors 61 and 62 will be described with reference to Figures 3A, 3B, 3C, and 3D. Figures 3A to 3D are plan views of inductors 61 and 62 on the first, second, third, and fourth layers of module substrate 90 according to this embodiment. Specifically, Figures 3A to 3D show the area iii of the high-frequency circuit 1 in Figure 2. Note that in Figure 3A, the capacitor 63 is omitted from the illustration to make the inductor 61 easier to see.

[0066] The module substrate 90 includes a first layer, a second layer, a third layer, and a fourth layer, in that order from the main surface 90a side. That is, the first layer, the second layer, the third layer, and the fourth layer are closer to the main surface 90a of the module substrate 90, in that order. In the present embodiment, the first layer includes the main surface 90a, but is not limited to this. Note that another layer may be inserted between the first and second layers, between the second and third layers, or between the third and fourth layers.

[0067] The via conductors 711 and 721 are connected to the output terminals of the power amplifiers 11 and 12 included in the integrated circuit 72 on the main surface 90 a of the module substrate 90 , respectively.

[0068] The via conductors 911 and 915 are connected to both ends of the capacitor 63 on the main surface 90a of the module substrate 90. The via conductors 911 and 915 are connected to the power supply voltage terminal 123 and the ground terminal, respectively, on the main surface of the module substrate 90 opposite the main surface 90a.

[0069] 3A and 3B, the inductor 61 is formed on the first layer and the second layer. Specifically, the inductor 61 is formed by a wiring 611 on the first layer and a wiring 612 on the second layer. The wiring 611 and 612 are connected by a via conductor 912 that connects the first layer and the second layer. One end of the inductor 61 is connected to the power supply voltage terminal 123 from the first layer through the via conductor 911. The other end of the inductor 61 is connected to the output terminal of the power amplifier 12 from the second layer through a via conductor 721.

[0070] 3C and 3D , the inductor 62 is formed on the third layer and the fourth layer. Specifically, the inductor 62 is formed by a wiring 621 on the third layer and a wiring 622 on the fourth layer. The wiring 621 and 622 are connected by a via conductor 914 that connects the third layer and the fourth layer. One end of the inductor 62 is connected to the other end of the inductor 61 on the second layer from the third layer through a via conductor 913. The other end of the inductor 62 is connected to the output end of the power amplifier 11 included in the integrated circuit 71 on the main surface 90 a through a via conductor 711.

[0071] In this way, the inductor 61 formed on the first layer and the second layer at least partially overlaps with the inductor 62 formed on the third layer and the fourth layer in a plan view of the module substrate 90. In other words, in a plan view of the module substrate 90, at least a portion of the inductor 61 overlaps with at least a portion of the inductor 62.

[0072] [1.5. Summary] As described above, the high-frequency circuit 1 according to this embodiment includes the power amplifiers 11 and 12, the power supply voltage terminal 123 that supplies the power supply voltage Vcc2 to the power amplifiers 11 and 12, the inductor 61 that is connected between the power supply voltage terminal 123 and the output end of the power amplifier 11 and between the power supply voltage terminal 123 and the output end of the power amplifier 12, and the inductor 62 that is connected between the power supply voltage terminal 123 and the output end of the power amplifier 11 but is not connected between the power supply voltage terminal 123 and the output end of the power amplifier 12.

[0073] According to this, the inductor 61 is connected between the power supply voltage terminal 123 and the output terminal of the power amplifier 11, and between the power supply voltage terminal 123 and the output terminal of the power amplifier 12. Therefore, the overall size of the inductor can be reduced compared to when inductors having required inductance values ​​are separately connected to a path connecting the power supply voltage terminal 123 and the output terminal of the power amplifier 11 (hereinafter referred to as a first power supply line) and a path connecting the power supply voltage terminal 123 and the output terminal of the power amplifier 12 (hereinafter referred to as a second power supply line). Furthermore, by connecting the inductor 62 only to the first power supply line, different inductance values ​​can be achieved for the first power supply line and the second power supply line. In other words, the inductor 61 connected to both the first power supply line and the second power supply line, and the inductor 62 connected only to the first power supply line, can be used to reduce the overall size of the inductor while satisfying the inductance value required for each power supply line.

[0074] For example, the high-frequency circuit 1 according to this embodiment may further include a module substrate 90 on which the power amplifiers 11 and 12 are arranged, and the inductors 61 and 62 may be formed by wiring 611, 612, 621, and 622 formed on the module substrate 90.

[0075] This allows the inductors 61 and 62 to be configured using the wires 611, 612, 621, and 622, thereby reducing the number of parts.

[0076] Furthermore, for example, in the high-frequency circuit 1 according to this embodiment, the inductor 61 may at least partially overlap the inductor 62 when the module substrate 90 is seen in a plan view.

[0077] This allows the area in which the inductors 61 and 62 are arranged to be reduced in plan view of the module substrate 90, thereby enabling the high-frequency circuit 1 to be made smaller.

[0078] Furthermore, for example, in the high-frequency circuit 1 according to this embodiment, the module substrate 90 may include, in order from the main surface 90a side on which the power amplifiers 11 and 12 are arranged, a first layer, a second layer, a third layer, and a fourth layer, and the inductor 61 may be formed in the first layer and the second layer, and the inductor 62 may be formed in the third layer and the fourth layer.

[0079] This allows the multiple layers in the module substrate 90 to be used effectively, and the area in which the inductors 61 and 62 are arranged to be reduced.

[0080] For example, the high-frequency circuit 1 according to this embodiment may further include a filter 31 connected to the output terminal of the power amplifier 11 and having a pass band that includes the transmission band of band A, and a filter 32 connected to the output terminal of the power amplifier 12 and having a pass band that includes the transmission band of band B that is higher than the transmission band of band A.

[0081] This allows inductors 61 and 62 to be used to ensure the inductance value required to suppress leakage of high-frequency signals in the lower band A, and inductor 61 to be used to ensure the inductance value required to suppress leakage of high-frequency signals in the higher band B.

[0082] In addition, the communication device 5 according to this embodiment includes an RFIC 3 configured to process high-frequency signals, and a high-frequency circuit 1 configured to transmit high-frequency signals between the RFIC 3 and the antennas 2a and 2b.

[0083] This allows the above-mentioned effects of the high-frequency circuit 1 to be realized in the communication device 5.

[0084] Second Embodiment Next, a second embodiment will be described. The high-frequency circuit according to this embodiment differs from the first embodiment in that it further includes a capacitor. The following describes the second embodiment, focusing on the differences from the first embodiment, with reference to the drawings.

[0085] [2.1. Circuit Configuration of High-Frequency Circuit 1A] A communication device 5A according to the present embodiment is similar to the communication device 5 according to the first embodiment, except that it includes a high-frequency circuit 1A instead of the high-frequency circuit 1. Therefore, a description of the communication device 5A will be omitted, and the circuit configuration of the high-frequency circuit 1A will be described with reference to FIG.

[0086] 4 is a circuit diagram of a high-frequency circuit 1A according to embodiment 2. Note that FIG. 4 is an exemplary configuration, and the high-frequency circuit 1A can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency circuit 1A provided below should not be interpreted as limiting.

[0087] The high-frequency circuit 1A includes power amplifiers 11 and 12, filters 31 and 32, inductors 51, 53, 54, 61 and 62, capacitors 52, 55, 63, 64, 65, 66 and 68, switches 67 and 69, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, and power supply voltage terminals 121, 122 and 123.

[0088] Capacitor 64 is an example of a first capacitor, and is connected between ground and a path connecting the output terminal of power amplifier 11 and inductor 62. Capacitor 64 is included in integrated circuit 71A together with power amplifier 11. Integrated circuit 71A is an example of a first integrated circuit, and is a semiconductor integrated circuit similar to integrated circuit 71 of the first embodiment.

[0089] Capacitor 65 is an example of a second capacitor, and is connected between ground and a path connecting the output terminal of power amplifier 12 and inductor 61. Capacitor 65 is included in integrated circuit 72A together with power amplifier 12. Integrated circuit 72A is an example of a second integrated circuit, and is a semiconductor integrated circuit similar to integrated circuit 72 of the first embodiment.

[0090] The capacitor 66 and the switch 67 are an example of a third capacitor and a first switch, respectively, and are connected in series between a path connecting the output terminal of the power amplifier 11 and the inductor 62 and ground. Specifically, one end of the capacitor 66 is connected to the path connecting the inductor 62, and the other end of the capacitor 66 is connected to one end of the switch 67. One end of the switch 67 is connected to the other end of the capacitor 66, and the other end of the switch 67 is connected to ground.

[0091] In this connection configuration, the switch 67 can switch between connection and disconnection between the capacitor 66 and ground based on, for example, a control signal from the RFIC 3. Specifically, when the power amplifier 11 operates, the switch 67 is opened, and when the power amplifier 12 operates, the switch 67 is closed. The switch 67 is configured as a single-pole single-throw (SPST) type switch circuit.

[0092] The capacitor 68 and the switch 69 are an example of a fourth capacitor and a second switch, respectively, and are connected in series between a path connecting the output terminal of the power amplifier 12 and the inductor 61 and ground. Specifically, one end of the capacitor 68 is connected to the path connecting the inductor 61, and the other end of the capacitor 68 is connected to one end of the switch 69. One end of the switch 69 is connected to the other end of the capacitor 68, and the other end of the switch 69 is connected to ground.

[0093] In this connection configuration, the switch 69 can switch between connection and disconnection between the capacitor 68 and ground based on, for example, a control signal from the RFIC 3. Specifically, the switch 69 is closed when the power amplifier 11 operates, and is opened when the power amplifier 12 operates. The switch 69 is configured as an SPST type switch circuit.

[0094] The switches 67 and 69 may be configured as a single SPDT (Single-Pole Double-Throw) switch circuit. In this case, in the SPDT switch circuit, the common terminal may be connected to ground, and the two selection terminals may be connected to the capacitors 66 and 68, respectively.

[0095] Furthermore, the capacitor 66 and the switch 67 may be connected in reverse, i.e., the capacitor 66 may be connected between the switch 67 and ground. Similarly, the capacitor 68 and the switch 69 may be connected in reverse, i.e., the capacitor 68 may be connected between the switch 69 and ground.

[0096] The high-frequency circuit 1A does not have to include one or any combination of the capacitors 64, 65, 66, and 68. In other words, the high-frequency circuit 1A only needs to include at least one of the capacitors 64, 65, 66, and 68. If the high-frequency circuit 1A does not include the capacitor 66, the high-frequency circuit 1A does not have to include the switch 67 either. Furthermore, if the high-frequency circuit 1A does not include the capacitor 68, the high-frequency circuit 1A does not have to include the switch 69 either.

[0097] [2.2. Attenuation Characteristics of Power Supply Voltage Line] The attenuation characteristics of the high-frequency circuit 1A when viewed from the output terminals of the power amplifiers 11 and 12 to the power supply voltage terminal 123 will be described with reference to FIGS. 5 and 6. FIG.

[0098] Fig. 5 is a graph showing the frequency characteristics of the forward voltage gain (S21) when viewed from the output end of the power amplifier 11 to the power supply voltage terminal 123 in the high-frequency circuit 1A according to the second embodiment. Fig. 6 is a graph showing the frequency characteristics of the forward voltage gain (S21) when viewed from the output end of the power amplifier 12 to the power supply voltage terminal 123 in the high-frequency circuit 1A according to the second embodiment.

[0099] 5, switch 67 is open and switch 69 is closed. In this state, the high-frequency circuit 1A according to this embodiment can reduce the forward voltage gain (S21) when viewed from the output end of the power amplifier 11 to the power supply voltage terminal 123 in the high-frequency band, compared to the high-frequency circuit 1 according to embodiment 1. In other words, the high-frequency circuit 1A can further suppress leakage of high-frequency signals from the output end of the power amplifier 11 to the power supply voltage terminal 123. In FIG. 5, capacitor 64 enhances attenuation in the 2 to 6 GHz range, capacitor 65 enhances attenuation in the 2 to 6 GHz range, and capacitor 68 enhances attenuation in the 0.1 to 2 GHz range.

[0100] In Fig. 6, switch 67 is closed and switch 69 is open. In this state, the high-frequency circuit 1A according to this embodiment can reduce the forward voltage gain (S21) when viewed from the output end of the power amplifier 12 to the power supply voltage terminal 123 in the high-frequency band, compared to the high-frequency circuit 1 according to embodiment 1. In other words, the high-frequency circuit 1A can further suppress leakage of high-frequency signals from the output end of the power amplifier 12 to the power supply voltage terminal 123. In Fig. 6, capacitor 64 enhances attenuation in the 0.7 to 1.1 GHz range, capacitor 65 enhances attenuation in the 2.5 to 5 GHz range, and capacitor 66 enhances attenuation in the 0.1 to 0.5 GHz range.

[0101] By appropriately setting the capacitance values ​​of capacitors 64, 65, 66, and 68, it is also possible to obtain attenuation characteristics that are more suitable for suppressing leakage of high-frequency signals to power supply voltage terminal 123. However, since capacitors 64 and 65 have a large effect on the impedance of the signal path, it may not be possible to set the capacitance values ​​that are optimal for suppressing leakage of high-frequency signals.

[0102] [2.3. Summary] As described above, the high-frequency circuit 1A according to this embodiment may further include the capacitor 64 connected between the ground and the path connecting the output terminal of the power amplifier 11 and the inductor 62.

[0103] As a result, the inductors 61 and 62 and the capacitor 64 can increase the amount of attenuation of the transmission signals of bands A and B transmitted from the output ends of the power amplifiers 11 and 12 to the power supply voltage terminal 123, thereby suppressing leakage of the transmission signals of bands A and B.

[0104] Furthermore, for example, in the high-frequency circuit 1A according to the present embodiment, the power amplifier 11 and the capacitor 64 may be included in an integrated circuit 71A.

[0105] According to this, the integrated circuit 71A including the power amplifier 11 also includes the capacitor 64, so that the number of parts can be reduced and the high frequency circuit 1A can be made smaller.

[0106] Furthermore, for example, the high-frequency circuit 1A according to this embodiment may further include a capacitor 65 connected between the ground and a path connecting the output terminal of the power amplifier 12 and the inductor 61.

[0107] As a result, the inductors 61 and 62 and the capacitor 65 can increase the amount of attenuation of the transmission signals of bands A and B transmitted from the output ends of the power amplifiers 11 and 12 to the power supply voltage terminal 123, thereby suppressing leakage of the transmission signals of bands A and B.

[0108] Furthermore, for example, in the high-frequency circuit 1A according to the present embodiment, the power amplifier 12 and the capacitor 65 may be included in an integrated circuit 72A.

[0109] According to this, the integrated circuit 72A including the power amplifier 12 also includes the capacitor 65, so that the number of parts can be reduced and the high frequency circuit 1A can be made smaller.

[0110] Furthermore, for example, the high-frequency circuit 1A according to this embodiment may further include a capacitor 66 and a switch 67 connected in series between the path connecting the output terminal of the power amplifier 11 and the inductor 62 and ground.

[0111] This makes it possible to increase the amount of attenuation of the transmission signal of band B transmitted from the output end of power amplifier 12 to power supply voltage terminal 123 by inductors 61 and 62 and capacitor 66, thereby suppressing leakage of the transmission signal of band B. In particular, since switch 67 can switch between connection and disconnection of capacitor 66, it is possible to suppress changes in impedance of the signal path of the transmission signal of band A due to capacitor 66.

[0112] Furthermore, for example, in the high-frequency circuit 1A according to this embodiment, when the power amplifier 11 operates, the switch 67 may be opened, and when the power amplifier 12 operates, the switch 67 may be closed.

[0113] With this, when a signal of band A is transmitted, the capacitor 66 is not connected to the signal path of the transmission signal of band A, so that deterioration of the characteristics of the signal path of the transmission signal of band A can be suppressed. On the other hand, when a signal of band B is transmitted, the inductor 62 and the capacitor 66 are shunt-connected to the power supply line, so that leakage of the transmission signal of band B can be effectively suppressed. In other words, deterioration of the characteristics of the transmission path of band A can be suppressed when the signal of band A is transmitted, and leakage of the transmission signal of band B can be suppressed when the signal of band B is transmitted.

[0114] Furthermore, for example, the high-frequency circuit 1A according to this embodiment may further include a capacitor 68 and a switch 69 connected in series between the path connecting the output terminal of the power amplifier 12 and the inductor 61 and ground.

[0115] This makes it possible to increase the amount of attenuation of the transmission signal of band A transmitted from the output end of power amplifier 11 to power supply voltage terminal 123 by inductors 61 and 62 and capacitor 68, thereby suppressing leakage of the transmission signal of band A. In particular, since switch 69 can switch between connecting and disconnecting capacitor 68, it is possible to suppress changes in impedance of the signal path of the transmission signal of band B due to capacitor 68.

[0116] Furthermore, for example, in the high-frequency circuit 1A according to this embodiment, the switch 69 may be closed when the power amplifier 11 operates, and the switch 69 may be opened when the power amplifier 12 operates.

[0117] With this, when a signal of band B is transmitted, capacitor 68 is not connected to the signal path of the transmission signal of band B, so that deterioration of the characteristics of the signal path of the transmission signal of band B can be suppressed. On the other hand, when a signal of band A is transmitted, capacitor 68 is shunt-connected to the power supply line and can form a low-pass filter together with inductors 61 and 62, so that leakage of the transmission signal of band A can be effectively suppressed. In other words, deterioration of the characteristics of the transmission path of band B can be suppressed when a signal of band B is transmitted, and leakage of the transmission signal of band A can be suppressed when a signal of band A is transmitted.

[0118] In addition, the communication device 5A of this embodiment includes an RFIC 3 configured to process high-frequency signals, and a high-frequency circuit 1A configured to transmit high-frequency signals between the RFIC 3 and the antennas 2a and 2b.

[0119] This allows the above-described effects of the high-frequency circuit 1A to be realized in the communication device 5A.

[0120] (Other Embodiments) While the high-frequency circuit and communication device according to the present invention have been described above based on the embodiments, the high-frequency circuit and communication device according to the present invention are not limited to the above embodiments. The present invention also includes other embodiments realized by combining any of the components in the above embodiments, modifications obtained by applying various modifications to the above embodiments that would occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the above-mentioned high-frequency circuit.

[0121] For example, in the circuit configuration of the high-frequency circuit according to each of the above embodiments, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings. For example, an impedance matching circuit may be inserted between the power amplifier and the filter.

[0122] In the above-described embodiments, each of the power amplifiers 11 and 12 is a multi-stage amplifier, but this is not limiting. For example, the power amplifier 11 may be a single-stage amplifier. In this case, the high-frequency circuit 1 and / or 1A may not include the inductor 51, the capacitor 52, and the power supply voltage terminal 121, and the power amplifier 11 may not include the amplifier T11. Furthermore, for example, the power amplifier 12 may be a single-stage amplifier. In this case, the high-frequency circuit 1 and / or 1A may not include the power supply voltage terminal 122, the inductors 53 and 54, and the capacitor 55, and the power amplifier 12 may not include the amplifiers T21 and T22.

[0123] The high frequency circuits 1 and / or 1A may also include receive paths for bands A and / or B.

[0124] The following describes the features of the high-frequency circuit and communication device described based on the above embodiments.

[0125] <1> A radio frequency circuit comprising: a first power amplifier and a second power amplifier; a power supply voltage terminal that supplies a power supply voltage to the first power amplifier and the second power amplifier; a first inductor that is connected between the power supply voltage terminal and an output end of the first power amplifier and between the power supply voltage terminal and the output end of the second power amplifier; and a second inductor that is connected between the power supply voltage terminal and the output end of the first power amplifier, but is not connected between the power supply voltage terminal and the output end of the second power amplifier.

[0126] <2> The high-frequency circuit according to <1>, further comprising a module substrate on which the first power amplifier and the second power amplifier are arranged, and the first inductor and the second inductor are formed by wiring formed on the module substrate.

[0127] <3> The high-frequency circuit according to <2>, wherein the first inductor at least partially overlaps with the second inductor in a plan view of the module substrate.

[0128] <4> The high-frequency circuit according to <2> or <3>, wherein the module substrate includes a first layer, a second layer, a third layer, and a fourth layer in this order from a main surface side on which the first power amplifier and the second power amplifier are arranged, the first inductor is formed in the first layer and the second layer, and the second inductor is formed in the third layer and the fourth layer.

[0129] <5> The high-frequency circuit according to any one of <1> to <4>, further comprising: a first filter connected to an output terminal of the first power amplifier and having a pass band including a transmission band of a first band; and a second filter connected to an output terminal of the second power amplifier and having a pass band including a transmission band of a second band that is higher than the transmission band of the first band.

[0130] <6> The high-frequency circuit according to any one of <1> to <5>, further comprising a first capacitor connected between a path connecting an output terminal of the first power amplifier and the second inductor and ground.

[0131] <7> The high-frequency circuit according to <6>, wherein the first power amplifier and the first capacitor are included in a first integrated circuit.

[0132] <8> The high-frequency circuit according to any one of <1> to <7>, further comprising a second capacitor connected between a path connecting the output terminal of the second power amplifier and the first inductor and ground.

[0133] <9> The high-frequency circuit according to <8>, wherein the second power amplifier and the second capacitor are included in a second integrated circuit.

[0134] <10> The high-frequency circuit according to any one of <1> to <9>, further comprising a third capacitor and a first switch connected in series between a path connecting the output end of the first power amplifier and the second inductor and ground.

[0135] <11> The high-frequency circuit according to <10>, wherein the first switch is opened when the first power amplifier operates, and the first switch is closed when the second power amplifier operates.

[0136] <12> The high-frequency circuit according to any one of <1> to <11>, further comprising a fourth capacitor and a second switch connected in series between a path connecting the output end of the second power amplifier and the first inductor and ground.

[0137] <13> The high-frequency circuit according to <12>, wherein the second switch is closed when the first power amplifier operates, and the second switch is opened when the second power amplifier operates.

[0138] <14> A communication device comprising: a signal processing circuit configured to process a high-frequency signal; and the high-frequency circuit according to any one of <1> to <13> configured to transmit the high-frequency signal between the signal processing circuit and an antenna.

[0139] The present invention can be widely used as a high-frequency circuit disposed in the front end of communication devices such as mobile phones.

[0140] REFERENCE SIGNS LIST 1, 1A High frequency circuit 2a, 2b Antenna 3 RFIC 4 BBIC 5, 5A Communication device 11, 12 Power amplifier 31, 32 Filter 51, 53, 54, 61, 62 Inductor 52, 55, 63, 64, 65, 66, 68 Capacitor 67, 69 Switch 71, 71A, 72, 72A Integrated circuit 90 Module substrate 90a Main surface 101, 102 Antenna connection terminal 111, 112 High frequency input terminal 121, 122, 123 Power supply voltage terminal 611, 612, 621, 622 Wiring 711, 721, 911, 912, 913, 914, 915 Via conductor T11, T12, T21, T22, T23 Amplifier

Claims

1. A high-frequency circuit comprising: a first power amplifier and a second power amplifier; a power supply voltage terminal that supplies a power supply voltage to the first power amplifier and the second power amplifier; a first inductor connected between the power supply voltage terminal and an output terminal of the first power amplifier and between the power supply voltage terminal and the output terminal of the second power amplifier; and a second inductor connected between the power supply voltage terminal and the output terminal of the first power amplifier, but not connected between the power supply voltage terminal and the output terminal of the second power amplifier.

2. The high-frequency circuit according to claim 1, further comprising a module substrate on which the first power amplifier and the second power amplifier are arranged, and the first inductor and the second inductor are formed by wiring formed on the module substrate.

3. The high-frequency circuit according to claim 2, wherein the first inductor at least partially overlaps with the second inductor in a plan view of the module substrate.

4. The high-frequency circuit according to claim 2 or 3, wherein the module substrate includes, in order from the main surface on which the first power amplifier and the second power amplifier are arranged, a first layer, a second layer, a third layer, and a fourth layer, the first inductor being formed in the first layer and the second layer, and the second inductor being formed in the third layer and the fourth layer.

5. The radio frequency circuit according to any one of claims 1 to 4, further comprising: a first filter connected to the output end of the first power amplifier and having a pass band including a transmission band of a first band; and a second filter connected to the output end of the second power amplifier and having a pass band including a transmission band of a second band that is higher than the transmission band of the first band.

6. The high-frequency circuit according to any one of claims 1 to 5, further comprising a first capacitor connected between a path connecting the output end of the first power amplifier and the second inductor and ground.

7. The high frequency circuit according to claim 6, wherein the first power amplifier and the first capacitor are included in a first integrated circuit.

8. The high-frequency circuit according to any one of claims 1 to 7, further comprising a second capacitor connected between ground and a path connecting the output terminal of the second power amplifier and the first inductor.

9. The high frequency circuit according to claim 8, wherein the second power amplifier and the second capacitor are included in a second integrated circuit.

10. The high-frequency circuit according to any one of claims 1 to 9, further comprising a third capacitor and a first switch connected in series between ground and a path connecting the output end of the first power amplifier and the second inductor.

11. The high frequency circuit according to claim 10, wherein the first switch is opened when the first power amplifier operates, and the first switch is closed when the second power amplifier operates.

12. The high-frequency circuit according to any one of claims 1 to 11, further comprising a fourth capacitor and a second switch connected in series between ground and a path connecting the output end of the second power amplifier and the first inductor.

13. The high frequency circuit according to claim 12, wherein the second switch is closed when the first power amplifier operates, and the second switch is opened when the second power amplifier operates.

14. A communication device comprising: a signal processing circuit configured to process a high-frequency signal; and a high-frequency circuit according to any one of claims 1 to 13 configured to transmit the high-frequency signal between the signal processing circuit and an antenna.

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