Display device

Abstract

Provided is a display device in which an increase in parasitic capacitance between a scan line and a signal line is suppressed. A display device according to one embodiment of the present disclosure comprises: a transistor that has a semiconductor layer; a signal line that is layered on the transistor in a first direction; and a contact section that is provided between the semiconductor layer and the signal line in the first direction, and electrically connects the transistor and the signal line, wherein the contact section has, in order in the first direction, a first plug, a middle layer, and a second plug, the first plug electrically connects the semiconductor layer and the middle layer, and the second plug electrically connects the middle layer and the signal line.

Description

display device

[0001] The present disclosure relates to a display device.

[0002] For example, Patent Document 1 discloses an electro-optical device provided with a pixel electrode side light shielding portion that partially covers a pixel electrode side source / drain region in plan view on a TFT (Thin Film Transistor) array substrate.

[0003] JP 2009-115883 A

[0004] Incidentally, in a display device having a thin film transistor (TFT) array substrate, it is required to suppress an increase in parasitic capacitance between the scanning lines and the signal lines.

[0005] A display device according to a first embodiment of the present disclosure includes a transistor having a semiconductor layer, a signal line stacked on the transistor in a first direction, and a contact portion disposed between the semiconductor layer and the signal line in the first direction and electrically connecting the transistor and the signal line. The contact portion includes a first plug, an intermediate layer, and a second plug, arranged in that order in the first direction. The first plug electrically connects the semiconductor layer and the intermediate layer. The second plug electrically connects the intermediate layer and the signal line.

[0006] In the display device according to the first embodiment of the present disclosure, the contact portion has a first plug, an intermediate layer, and a second plug stacked in order in a first direction, thereby reducing manufacturing errors in the dimensions of the contact portion and realizing a contact portion with high dimensional accuracy.

[0007] FIG. 1 is a cross-sectional schematic view illustrating an example of the configuration of a display device according to a first embodiment of the present disclosure. FIG. 2 is a schematic exploded perspective view of the display device shown in FIG. 1. FIG. 3 is a schematic plan view illustrating an example of the configuration of the display device shown in FIG. 1. FIG. 4 is a cross-sectional schematic view illustrating an example of the configuration of a display device according to a first modification of the present disclosure. FIG. 5 is a cross-sectional schematic view illustrating an example of the configuration of a display device according to a second modification of the present disclosure. FIG. 6 is a cross-sectional schematic view illustrating an example of the configuration of a display device according to a third modification of the present disclosure. FIG. 7A is a schematic exploded perspective view of a display device according to a fourth modification of the present disclosure. FIG. 7B is a schematic plan view of the display device shown in FIG. 7A as viewed from the scanning line side. FIG. 7C is a cross-sectional schematic view illustrating an example of the configuration of the display device shown in FIG. 7A. FIG. 8A is a schematic exploded perspective view of a display device according to a fifth modification of the present disclosure. FIG. 8B is a cross-sectional schematic view illustrating an example of the configuration of the display device shown in FIG. 8B. FIG. 9 is a cross-sectional schematic view illustrating an example of the configuration of a display device according to a second embodiment of the present disclosure. FIG. 10 is a schematic exploded perspective view of the display device shown in FIG. 1. FIG. 11 is a schematic plan view illustrating an example of the configuration of the display device shown in FIG. 1 . FIG. 12A is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 6 of the present disclosure. FIG. 12B is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 6 of the present disclosure. FIG. 13A is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 7 of the present disclosure. FIG. 13B is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 7 of the present disclosure. FIG. 14A is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 8 of the present disclosure. FIG. 14B is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 8 of the present disclosure. FIG. 15 is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 9 of the present disclosure. FIG. 16 is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 10 of the present disclosure. FIG. 17 is a schematic cross-sectional view illustrating an example of the configuration of a display device according to the third embodiment of the present disclosure. FIG. 18 is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 11 of the present disclosure. FIG. 19 is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 12 of the present disclosure. Fig. 20 is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 13 of the present disclosure. Fig. 21 is a schematic cross-sectional view illustrating an example of the configuration of a display device according to Modification 14 of the present disclosure.Fig. 22 is a cross-sectional schematic diagram showing an example of the configuration of a display device according to Modification 15 of the present disclosure. Fig. 23 is a cross-sectional schematic diagram showing an example of the configuration of a display device according to Modification 16 of the present disclosure. Fig. 24 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. Fig. 25 is a block diagram showing an example of the functional configuration of a camera head and a CCU. Fig. 26 is a block diagram showing an example of a schematic configuration of a vehicle control system. Fig. 27 is an explanatory diagram showing an example of the installation positions of an outside vehicle information detection unit and an imaging unit.

[0008] Hereinafter, several embodiments of the present disclosure will be described in detail with reference to the drawings. The following description is one specific example of the present disclosure, and the present disclosure is not limited to the following aspects. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc. of each component shown in each drawing. The order of description is as follows: 1. First Embodiment (Example of a Display Device in Which an Intermediate Layer is Provided Between Contacts Connecting a Signal Line and a Semiconductor Layer) 1-1. Configuration of the Display Device 1-2. Actions and Effects 2. Modifications of the First Embodiment 2-1. Modification 1 (Another Example of a Display Device) 2-2. Modification 2 (Another Example of a Display Device) 2-3. Modification 3 (Another Example of a Display Device) 2-4. Modification 4 (Another Example of a Display Device) 2-5. Modification 5 (Another Example of a Display Device) 3. Second Embodiment (Example of a Display Device Including a Storage Capacitor Provided to Straddle a Semiconductor Layer) 3-1. Configuration of the Display Device 3-2. Actions and Effects 4. Modifications of the Second Embodiment 4-1. 4. Modification 6 (another example of a display device) 4-2. Modification 7 (another example of a display device) 4-3. Modification 8 (another example of a display device) 4-4. Modification 9 (another example of a display device) 4-5. Modification 10 (another example of a display device) 5. Third embodiment (example of a display device in which a high-dielectric film is provided between a scanning line and a signal line) 6. Modification of the third embodiment 7. Application example

[0009] 1. First embodiment 1-1. Configuration of display device Fig. 1 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 1) according to a first embodiment of the present disclosure. Fig. 2 is a schematic diagram illustrating an example of an exploded perspective configuration of the display device 1 illustrated in Fig. 1. Fig. 3 is a schematic diagram illustrating an example of a planar configuration of the display device 1 illustrated in Fig. 1.

[0010] As shown in FIGS. 1 and 3 , the display device 1 has a substrate 10, a plurality of scanning lines 11, and a plurality of signal lines 8. The plurality of scanning lines 11 are stacked on the substrate 10 in the Z-axis direction and extend in the Y-axis direction. The plurality of signal lines 81 are arranged to face each of the plurality of scanning lines 11 in the Z-axis direction and extend in the X-axis direction. In the Z-axis direction, a plurality of scanning lines 11 are provided between the substrate 10 and the plurality of signal lines 81. One pixel P is provided at each intersection of each of the plurality of scanning lines 11 and each of the plurality of signal lines 81. The Z-axis direction corresponds to a "first direction" in one aspect of the present disclosure. The X-axis direction corresponds to a specific example of a "second direction" in one aspect of the present disclosure.

[0011] As shown in Fig. 2, the display device 1 includes a thin-film transistor 5 and a storage capacitor 6 at an intersection of one scanning line 11 and one signal line 81. As shown in Fig. 1, the display device 1 further includes an insulator 41, an insulator 42, a contact portion 7, a wiring 82, a wiring 83, a pixel electrode 91, and a liquid crystal alignment film 92. The thin-film transistor 5 corresponds to a specific example of a "transistor" according to one aspect of the present disclosure.

[0012] The substrate 10 supports the plurality of scanning lines 11 stacked in the Z-axis direction, and is optically transparent. The substrate 10 is made of, for example, silicon (Si).

[0013] The scanning line 11 is disposed on the opposite side of the signal line 81 in the Z-axis direction. A portion of the scanning line 11 has one or more openings 11H and is disposed at a position overlapping the semiconductor layer 51 (described later) of the thin-film transistor 5 in the Z-axis direction as viewed from the substrate 10. As shown in FIGS. 2 and 3 , in an extension region 11R that overlaps the thin-film transistor 5 in the Z-axis direction, the dimension of the scanning line 11 in the X-axis direction (hereinafter simply referred to as the width of the scanning line 11) is expanded in the X-axis direction compared to the region other than the extension region 11R. The width of the scanning line 11 is substantially the same as the dimension between the connection portion between the first main electrode 511 (described later) of the thin-film transistor 5 and the storage capacitor 6 and the connection portion between the second main electrode 521 and the second plug 712. That is, the scanning line 11 has a dimension in the X-axis direction that is substantially the same as the dimension of the semiconductor layer 51. The extension region 11R of the scanning line 11 is used as a back-surface light shield.

[0014] The scanning lines 11 are formed using a material having electrical conductivity and light-shielding properties. The scanning lines 11 are formed of a metal material such as tungsten silicide (WSi) or tungsten (W). When the scanning lines 11 are formed of WSi, the thickness of the scanning lines 11 (the dimension in the Z-axis direction) is, for example, 100 nm or more and 300 nm or less.

[0015] The scanning lines 11 are electrically connected to the thin-film transistors 5 via light shields 31 and 32. The light shields 31 and 32 are each intended to block light incident on the thin-film transistors 5 from the Y-axis direction. The light shields 31 and 32 extend in the X-axis direction. The light shields 31 and 32 are each formed using a material that is conductive and light-blocking. The light shields 31 and 32 are formed from a metal material such as tungsten silicide (WSi) or tungsten (W).

[0016] The insulator 41 buries the scanning line 11, the thin film transistor 5, and the contact portion 7. The insulator 41 is made of, for example, silicon oxide (SiO ２ ), silicon nitride (Si ３ N ４), silicon oxynitride (SiON), SiCN, or the like.

[0017] The insulator 42 buries the signal line 81, the wiring 82, and the wiring 83. The insulator 42 is made of, for example, silicon oxide (SiO ２ ), silicon nitride (Si ３ N ４ ), silicon oxynitride (SiON), SiCN, or the like.

[0018] The thin film transistor 5 is provided between the substrate 10 and the signal line 81. The thin film transistor 5 has a semiconductor layer 51, a gate insulating film 53, and a gate electrode .

[0019] The semiconductor layer 51 is located between the substrate 10 and the signal line 81 in the Z-axis direction, and is provided at a position corresponding to the region in the Z-axis direction where the width of the scanning line 11 is expanded. The shape of the semiconductor layer 51 along the XY plane (hereinafter referred to as the planar shape) is, for example, a rectangular shape with long sides extending in the X-axis direction. The length of the long side of the semiconductor layer 51 in the X-axis direction is shorter than the width of the expanded region 11R of the scanning line 11. Therefore, the semiconductor layer 51 overlaps with the scanning line 11 when viewed from the substrate 10. The semiconductor layer 51 is formed using, for example, polysilicon (Poly-Si). The thickness of the semiconductor layer 51 (dimension in the Z-axis direction) is, for example, 20 nm or more and 100 nm or less.

[0020] The semiconductor layer 51 has a first main electrode 511 and a second main electrode 521. The semiconductor layer 51 further has a low impurity concentration light doped drain (LDD) region 512 and an LDD region 522.

[0021] The first main electrode 511 and the second main electrode 521 are each formed of an n-type semiconductor region having a high impurity concentration. The first main electrode 511, which is an n-type semiconductor region having a high impurity concentration, is connected to the storage capacitor 6 at a low resistance value. The first main electrode 511 is electrically connected to the pixel electrode 91. The second main electrode 521, which is an n-type semiconductor region having a high impurity concentration, is connected to the signal line 81 at a low resistance value.

[0022] The LDD region 512 is provided in the first main electrode 511 near the gate electrode 54. The LDD region 512 is a region doped with impurities such as n-type impurities to reduce resistance. The LDD region 512 is formed with an impurity concentration lower than the impurity concentration of a region of the first main electrode 511 formed by an n-type semiconductor region having a high impurity concentration.

[0023] The LDD region 522 is provided in the second main electrode 521 near the gate electrode 54. The LDD region 522 is a region doped with impurities such as n-type impurities to reduce resistance. The LDD region 522 is formed with an impurity concentration lower than the impurity concentration of the region of the second main electrode 521 formed by the n-type semiconductor region having a high impurity concentration.

[0024] The gate electrode 54 is provided at a position between the semiconductor layer 51 and the storage capacitor 6 in the Z-axis direction, and at a position overlapping in the Z-axis direction with the intermediate portion of the semiconductor layer 51 in the X-axis direction. The gate electrode 54 is disposed on the opposite side of the semiconductor layer 51 from the substrate 10, with a gate insulating film 53 interposed therebetween. The gate insulating film 53 is made of, for example, silicon oxide (SiO ２ ), silicon nitride (Si ３ N ４ ), silicon oxynitride (SiON), SiCN, or the like.

[0025] As shown in FIG. 2 , a portion of the gate electrode 54 that overlaps with the semiconductor layer 51 in the Z-axis direction is an effective portion 541. The gate electrode 54 further includes lead portions 542 and 543 that are led out from the effective portion 541 to both sides in the Y-axis direction. The effective portion 541, the lead portion 542, and the lead portion 543 are integrally formed. Each of the lead portions 542 and 543 extends in the X-axis direction. The lead portion 542 is electrically connected to the scanning line 11 via a light shield 31 (described later). The lead portion 543 is electrically connected to the scanning line 11 via a light shield 32 (described later). In a plan view, the entire gate electrode 54, including the effective portion 541, the lead portion 542, and the lead portion 543, has an H-shaped planar shape.

[0026] The storage capacitor 6 is located between the thin-film transistor 5 and the signal line 81 in the Z-axis direction. The storage capacitor 6 is provided at a position overlapping the thin-film transistor 5 in the Z-axis direction. The shape and size in the XY plane of a region 6R of the storage capacitor 6 that overlaps with the extension region 11R of the scanning line 11 in the Z-axis direction are approximately the same as the shape and size in the XY plane of the extension region 11R of the scanning line 11. The storage capacitor 6 is electrically connected to the thin-film transistor 5. A portion of the storage capacitor 6 is electrically connected to the first main electrode 511 of the semiconductor layer 51. The storage capacitor 6 is electrically connected in parallel between the first main electrode 511 and the pixel electrode 91.

[0027] The storage capacitor 6 has a multilayer structure in which an electrode 61, a dielectric 62, an electrode 63, a dielectric 64, and an electrode 65 are stacked in this order in the Z-axis direction on the first main electrode 511. On the side of the electrode 65 opposite the substrate 10, a light-shielding layer 66 and a light-shielding layer 67 that cover at least the storage capacitor 6 are further stacked in this order in the Z-axis direction.

[0028] Each of the electrodes 61 and 65 is connected to the first main electrode 511. The electrode 63 can be connected to, for example, a fixed power supply. Each of the electrodes 61, 63, and 65 is formed of, for example, polysilicon. Each of the electrodes 61, 63, and 65 is doped with impurities such as n-type impurities to reduce its resistance. Each of the electrodes 61, 63, and 65 has a thickness (dimension in the Z-axis direction) of, for example, 100 nm or more and 200 nm or less.

[0029] The dielectric 62 and the dielectric 64 are each made of, for example, SiN. The thickness (dimension in the Z-axis direction) of each of the dielectric 62 and the dielectric 64 is, for example, not less than 10 nm and not more than 30 nm.

[0030] The light-shielding layers 66 and 67 are made of, for example, WSi. The thickness (dimension in the Z-axis direction) of the light-shielding layer 66 is, for example, 40 nm to 100 nm. The thickness (dimension in the Z-axis direction) of the light-shielding layer 67 is, for example, 100 nm to 200 nm.

[0031] The contact portion 7 has a first plug 711, an intermediate layer 72, and a second plug 712 arranged in this order in the Z-axis direction.

[0032] The first plug 711 is provided in contact with both the semiconductor layer 51 and the intermediate layer 72, and electrically connects the semiconductor layer 51 and the intermediate layer 72. The first plug 711 is in ohmic contact with the second main electrode 521 of the semiconductor layer 51. The diameter of the first plug 711 extending in the Z-axis direction increases, for example, as it approaches the intermediate layer 72 from the semiconductor layer 51 along the Z-axis direction. The first plug 711 may be formed of, for example, a composite film in which Ti, TiN, and W are sequentially stacked. The first plug 711 may be formed of, for example, a wiring material including at least one of Ti, TiN, Al, AlSi, AlCu, Cu, and W.

[0033] The second plug 712 is provided in contact with the intermediate layer 72 and electrically connects the intermediate layer 72 and the signal line 81. The diameter of the second plug 712 extending in the Z-axis direction increases, for example, from the intermediate layer 72 toward the signal line 81 along the Z-axis direction. The second plug 712 may be formed of, for example, a composite film in which Ti, TiN, and W are sequentially stacked. The second plug 712 may be formed of, for example, a wiring material including at least one of Ti, TiN, Al, AlSi, AlCu, Cu, and W.

[0034] The intermediate layer 72 is conductive and electrically connects the first plug 711 and the second plug 712. The intermediate layer 72 is provided in a layer between the semiconductor layer 51 and the signal line 81 in the Z-axis direction. It is more preferable that the intermediate layer 72 be provided in a layer between the upper surface of the gate electrode 54 of the semiconductor layer 51 and the lower surface of a portion of the storage capacitor 6 other than the connection portion with the first main electrode 511 in the Z-axis direction. The intermediate layer 72 may contain at least one of tungsten silicide (WSi), silicon (Si), tungsten (W), aluminum (Al), copper (Cu), AlSi, AlCu, Ti, and TiN.

[0035] The intermediate layer 72 may have a light reflectance lower than that of polysilicon, for example. The intermediate layer 72 reflects stray light that passes from the substrate 10 through the opening 11H of the scan line 11 toward the thin-film transistor 5. Furthermore, the intermediate layer 72 may be formed using a material that is light-absorbing.

[0036] The intermediate layer 72 includes a first portion 721 and a second portion 722. The first portion 721 is a portion that contacts the first plug 711 and overlaps with the semiconductor layer 51 in the Z-axis direction. The second portion 722 is a portion that contacts the second plug 712 and overlaps with the opening 11H of the scanning line 11 in the Z-axis direction. As shown in FIG. 3 , the second portion 722 does not overlap with the scanning line 11 in a plan view, and is disposed at a position that protrudes from the scanning line 11.

[0037] The signal line 81 is disposed on the insulator 41 and extends in the X-axis direction on the insulator 41. The signal line 81 is formed of a composite film in which, for example, Ti, TiN, and AlCu are laminated in this order. The signal line 81 may be formed of a wiring material containing at least one of Ti, TiN, Al, AlSi, AlCu, Cu, and W. The thickness of the signal line 81 is, for example, 400 nm to 500 nm.

[0038] The signal line 81 is disposed in the insulator 42, which is shown in a simplified form. The insulator 42 is actually formed of a plurality of insulating layers. The insulator 42 is made of, for example, SiO ２ The insulator 42 is formed with a main insulating material of TiN. A plurality of wirings 82 and 83 are embedded in the insulator 42 on the signal line 81. The wirings 82 and 83 are formed of a composite film in which, for example, Ti, TiN, and AlCu are laminated in this order. The wirings 82 and 83 may also be formed of a wiring material containing at least one of Ti, TiN, Al, AlSi, AlCu, Cu, and W.

[0039] [1-2. Actions and Effects] The display device 1 according to the first embodiment of the present disclosure includes a thin-film transistor 5 having a semiconductor layer 51, a signal line 81 stacked on the thin-film transistor 5 in the Z-axis direction, and a contact portion 7 disposed between the semiconductor layer 51 and the signal line 81 in the Z-axis direction and electrically connecting the thin-film transistor 5 and the signal line 81. The contact portion 7 includes a first plug 711, an intermediate layer 72, and a second plug 712, arranged in this order in the Z-axis direction. This ensures an appropriate distance between the contact portion 7 and the scanning line 11 in the Z-axis direction, thereby suppressing the occurrence of unintended parasitic capacitance. As a result, improved operating performance of the display device 1 can be expected. This is described below.

[0040] In a typical display device with thin-film transistors, light incident on the thin-film transistors from the signal line (front side) side is blocked by a multilayer wiring layer, but the only thing blocking light from the scanning line (back side) side to the thin-film transistors is the scanning line. This poses a problem in that light blocking from the back side of the display device is insufficient.

[0041] Furthermore, in typical display devices with thin-film transistors, contact portions electrically connecting signal lines and semiconductor layers have columnar structures extending in the thickness direction from the signal lines to the semiconductor layer. To fabricate such columnar structures, through-holes are formed by selectively digging down a portion of the insulating film covering the semiconductor layer in the thickness direction, and then filling the through-holes with a conductive material. Here, the greater the digging depth, the greater the manufacturing error in the depth of the through-holes. Generally, to ensure reliable contact between the contact portions and the semiconductor layer, the target depth of the through-holes must be set to a depth that only slightly digs down into the semiconductor layer. However, as mentioned above, the greater the manufacturing error, the greater the depth, and the through-holes may penetrate the semiconductor layer. In this case, the lower end of the contact portion embedded in the through-hole is positioned below the semiconductor layer, resulting in a short distance between the contact portion and the scanning line. In such a case, a relatively large parasitic capacitance is generated between the contact portion and the scanning line, potentially affecting the operation of the thin-film transistors. To reduce such parasitic capacitance, it is conceivable to provide an opening in the scanning line where it overlaps with the contact portion in the thickness direction. However, doing so would expose part of the semiconductor layer from the back surface of the display device, which could lead to a new problem in that stray light from the back surface would be more likely to enter the semiconductor layer.

[0042] Therefore, in the display device 1 according to the first embodiment of the present disclosure, the contact portion 7 electrically connecting the thin-film transistor 5 and the signal line 81 is configured such that the first plug 711, the intermediate layer 72, and the second plug 712 are arranged in this order in the Z-axis direction. Therefore, in the display device 1, the manufacturing error of the dimensions of the contact portion 7 is reduced compared to, for example, a case in which the contact portion is configured with a single columnar plug extending in the Z-axis direction from the signal line 81 to the thin-film transistor 5, and the dimensional accuracy of the contact portion 7 in the Z-axis direction can be particularly improved. This ensures an appropriate distance between the contact portion 7 and the scanning line 11 in the Z-axis direction, thereby suppressing the occurrence of unintended parasitic capacitance. As a result, improved operating performance of the display device 1 can be expected.

[0043] Furthermore, in the display device 1 according to the first embodiment of the present disclosure, the diameter of the second plug 712 extending in the Z-axis direction becomes larger as it approaches the signal line 81 from the intermediate layer 72. The diameter of the second plug 712 having such a shape becomes larger as the dimension in the Z-axis direction increases. In this embodiment, the contact portion 7 connects the first plug 711 and the second plug 712 via the intermediate layer 72. Therefore, the diameter of the second plug 712 can be made smaller than when the contact portion is, for example, a single columnar plug extending in the Z-axis direction from the signal line 81 to the thin-film transistor 5. This expands the area in which the storage capacitor 6 provided above the thin-film transistor 5 can be formed, increasing the capacitance value of the storage capacitor 6, and thus improving the operating performance of the display device 1 can be expected.

[0044] Furthermore, in the display device 1 of the first embodiment of the present disclosure, the semiconductor layer 51 is arranged in a position overlapping the scanning line 11 when viewed from the back side, thereby suppressing the incidence of light from the back side onto the semiconductor layer 51.

[0045] Furthermore, in the display device 1 according to the first embodiment of the present disclosure, the intermediate layer 72 includes a second portion 722 at a position that contacts the second plug 712 and overlaps in the Z-axis direction with the opening 11H of the scanning line 11. The light-absorbing intermediate layer 72 overlaps in the Z-axis direction with the opening 11H of the scanning line 11 when viewed from the back surface side, thereby further suppressing the incidence of stray light from the back surface side into the semiconductor layer 51.

[0046] 2. Modifications of the First Embodiment Next, as several modifications of the first embodiment, modifications 1 to 5 of the present disclosure will be described. Note that components corresponding to those in the display device 1 of the first embodiment are given the same reference numerals, and descriptions thereof will be omitted.

[0047] [2-1. Modification 1] FIG. 4 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 1A) according to Modification 1 of the present disclosure.

[0048] In the display device 1 of the first embodiment described above, the intermediate layer 72 is provided in a layer between the storage capacitor 6 and the gate electrode 54 of the thin-film transistor 5 in the Z-axis direction, and an example is shown in which the intermediate layer 72 contains at least one of tungsten silicide (WSi), silicon (Si), tungsten (W), aluminum (Al), copper (Cu), AlSi, AlCu, Ti, and TiN, but the present disclosure is not limited to this.

[0049] As in the display device 1A of this modified example, the intermediate layer 72a may be provided at the same level as the gate electrode 54. It is more preferable that the intermediate layer 72a be formed with the same configuration as the gate electrode 54. Except for these points, the configuration of the display device 1A is substantially the same as the configuration of the display device 1 of the first embodiment described above.

[0050] In the display device 1A, the intermediate layer 72a is formed at the same level as the gate electrode 54 and with the same configuration as the gate electrode 54, so that the intermediate layer 72a and the gate electrode 54 can be formed simultaneously in the manufacturing process, thereby simplifying the manufacturing process.

[0051] [2-2. Modification 2] FIG. 5 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 1B) according to Modification 2 of the present disclosure.

[0052] In the display device 1 of the first embodiment described above, an example in which the intermediate layer 72 is a single layer has been shown, but the present disclosure is not limited to this. In the display device 1B of this modified example, for example, as shown in Fig. 5, the intermediate layer 72b may have a stepped shape such that the first portion 721b and the second portion 722b are separate layers.

[0053] Except for the above points, the configuration of the display device 1B is substantially the same as the configuration of the display device 1 of the first embodiment. Even with this configuration, the display device 1B can achieve the same effects as the display device 1 of the first embodiment.

[0054] [2-3. Modification 3] FIG. 6 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 1C) according to Modification 3 of the present disclosure.

[0055] In the display device 1 of the first embodiment described above, an example is shown in which the contact portion 7 has a first plug 711 and a second plug 712, but the present disclosure is not limited to this, and a portion of the intermediate layer 72c and a portion of the signal line 81c may be deformed to establish an electrical connection.

[0056] Except for the above points, the configuration of the display device 1C is substantially the same as the configuration of the display device 1 of the first embodiment. Even with this configuration, the display device 1C can achieve the same effects as the display device 1 of the first embodiment.

[0057] [2-4. Modification 4] Fig. 7A is a schematic diagram illustrating an example of an exploded perspective configuration of a display device 1D according to Modification 4 of the present disclosure. Fig. 7B is a schematic diagram illustrating an example of a planar configuration of the display device 1D shown in Fig. 7A as viewed from the scanning line side. Fig. 7C is a schematic diagram illustrating an example of a cross-sectional configuration of the display device 1D shown in Fig. 7A.

[0058] In the display device 1 of the first embodiment described above, an example was shown in which the scanning lines 11 have the openings 11H, but the present disclosure is not limited to this. As in the display device 1D of this modified example, the scanning lines 11d may not have openings and may extend in the X-axis direction. Except for this point, the configuration of the display device 1D is substantially the same as the configuration of the display device 1 of the first embodiment described above.

[0059] In the display device 1D according to the fourth modification, the scanning lines 11d extend in the X-axis direction, so that the light incident on the semiconductor layer 51 from the substrate 10 is further suppressed.

[0060] [2-5. Modification 5] Fig. 8A is a schematic diagram illustrating an example of an exploded perspective configuration of a display device 1E according to Modification 5 of the present disclosure. Fig. 8B is a schematic diagram illustrating an example of a cross-sectional configuration of the display device 1E illustrated in Fig. 8A.

[0061] In the display device 1 of the first embodiment, the scanning lines 11 are formed as a single layer having the openings 11H, but the present disclosure is not limited to this. As in the display device 1E of this modified example, the scanning lines 11e may have a multi-layer structure in which a scanning line 11e2 having no openings and extending in the X-axis direction and a scanning line 11e1 having the openings 11H are stacked on the substrate 10 in the Z-axis direction.

[0062] Except for the above points, the configuration of the display device 1E is substantially the same as the configuration of the display device 1 of the first embodiment. Even with this configuration, the display device 1E can achieve the same effects as the display device 1 of the first embodiment.

[0063] 3. Second Embodiment 3-1. Configuration of Display Device FIG. 9 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 2) according to a second embodiment of the present disclosure. FIG. 10 is a schematic diagram illustrating an example of an exploded perspective configuration of the display device 2 illustrated in FIG. 9. FIG. 11 is a schematic diagram illustrating an example of a planar configuration of the display device 2 illustrated in FIG. 9. Note that FIG. 9 corresponds to a YZ cross section perpendicular to the XZ cross section illustrated in FIG. 1. More specifically, FIG. 9 illustrates an example of a cross-sectional configuration taken along line LY-LY illustrated in FIG. 11.

[0064] As shown in FIGS. 9 to 11 , the display device 2 of the second embodiment includes a storage capacitor 6A having a main body 60 and a pair of protrusions 6T1 and 6T2. The main body 60 is a portion of the storage capacitor 6A located on the opposite side of the scanning line 11 from the gate electrode 54 in the Z-axis direction and covering the channel region CA (see FIG. 11 ). The channel region CA is a region of the semiconductor layer 51 that overlaps with the gate electrode 54 in the Z-axis direction. The main body 60 is a portion that includes a region 6R that overlaps with the extension region 11R of the scanning line 11 in the Z-axis direction. The pair of protrusions 6T1 and 6T2 each protrude from the main body 60 in the −Z direction toward the scanning line 11 and are disposed opposite each other in the Y-axis direction, sandwiching the semiconductor layer 51 and the pair of light shields 31 and 32 therebetween. 11 , a portion of each of the pair of protrusions 6T1 and 6T2, a portion of the channel region CA, and a portion of each of the pair of light shields 31 and 32 are located on the line LY-LY extending in the Y-axis direction. The configuration of the display device 2 of the second embodiment is substantially the same as the configuration of the display device 1 of the first embodiment, except that the display device 2 includes a storage capacitor 6A instead of the storage capacitor 6. Therefore, in the following description, the same reference numerals are used in the display device 2 for components that are substantially the same as the components included in the display device 1, and descriptions of those components will be omitted as appropriate.

[0065] Similar to the display device 1, the display device 2 includes a thin-film transistor 5, a scanning line 11, and a pair of light shields 31 and 32. The thin-film transistor 5 includes a semiconductor layer 51, a gate insulating film 53, and a gate electrode 54, which are stacked in this order in the Z-axis direction. The scanning line is located on the opposite side of the gate electrode 54 from the semiconductor layer 51 in the Z-axis direction, and extends in the Y-axis direction, which is perpendicular to the Z-axis direction. The pair of light shields 31 and 32 electrically connect the gate electrode 54 and the scanning line 11, and are disposed opposite each other in the Y-axis direction with the semiconductor layer 51 sandwiched therebetween.

[0066] 9, in the display device 2, the semiconductor layer 51 is preferably positioned so as to overlap with a portion of each of the pair of protrusions 6T1, 6T2 in an in-plane direction along the XY plane perpendicular to the Z-axis direction. That is, the distance in the Z-axis direction between the tip 6T1S, 6T2S of each of the pair of protrusions 6T1, 6T2 and the scanning line 11 is preferably equal to or less than the distance in the Z-axis direction between the lower surface 51BS of the semiconductor layer 51 and the scanning line 11. This is because external incident light onto the semiconductor layer 51 can be effectively blocked.

[0067] Furthermore, in the display device 2, the pair of protrusions 6T1, 6T2 are provided to face each other in the Y-axis direction, sandwiching at least a part of the channel region CA therebetween. In particular, it is preferable that each of the pair of protrusions 6T1, 6T2 extends in the X-axis direction, which is perpendicular to both the Z-axis direction and the Y-axis direction, so that the pair of protrusions 6T1, 6T2 face each other, sandwiching the entire channel region CA therebetween.

[0068] Like the storage capacitor 6, the storage capacitor 6A has a multilayer structure in which an electrode 61, a dielectric 62, an electrode 63, a dielectric 64, and an electrode 65 are stacked in this order in the Z-axis direction. Light-shielding layers 66 and 67 may be further provided above the storage capacitor 6A, i.e., on the opposite side of the gate electrode 54 from the storage capacitor 6A in the Z-axis direction. The light-shielding layers 66 and 67 are preferably provided in positions overlapping at least a portion of the storage capacitor 6A in the Z-axis direction. The materials and thicknesses of the electrodes 61, the dielectric 62, the electrode 63, the dielectric 64, the electrode 65, and the light-shielding layers 66 and 67 in the storage capacitor 6A may be the same as those of the storage capacitor 6 of the first embodiment. Furthermore, the light-shielding layers 66 and 67 may each contain at least one of tungsten silicide (WSi), silicon (Si), tungsten (W), aluminum (Al), copper (Cu), AlSi, AlCu, Ti, and TiN.

[0069] [3-2. Actions and Effects] In a transmissive display device, it is desirable to secure as large an aperture area as possible through which backlight passes. That is, a high aperture ratio, which is the ratio of the aperture area to the display area, is desirable. This is to increase the brightness of the image light from the display device. At the same time, the display device is also required to stably display good image light. In the display device 2 according to the second embodiment of the present disclosure, the protrusions 6T1 and 6T2 of the storage capacitor 6A each protrude in the −Z direction from the main body 60 toward the scanning line 11 and are arranged to face each other in the Y-axis direction, sandwiching the semiconductor layer 51 and the light shields 31 and 32 therebetween. According to the display device 2, by providing the protrusions 6T1 and 6T2 in this manner, the capacitance value of the storage capacitor 6A can be increased without reducing the aperture ratio in the display area or increasing the number of layers of the storage capacitor 6A. Furthermore, because the protrusions 6T1 and 6T2 are arranged to face each other in the Y-axis direction, sandwiching the semiconductor layer 51 and the light shields 31 and 32 therebetween, oblique incident light incident on the semiconductor layer 51 from an oblique direction can be blocked. As a result, the display device 2 can reduce the leakage current in the thin film transistor 5, thereby suppressing image quality degradation such as flicker, and therefore can exhibit excellent display performance.

[0070] In the display device 2, particularly when the semiconductor layer 51 is disposed at a position where it overlaps with a portion of each of the pair of protrusions 6T1, 6T2 in an in-plane direction along the XY plane orthogonal to the Z-axis direction, it is possible to effectively block external incident light onto the semiconductor layer 51. Furthermore, in the display device 2, the pair of protrusions 6T1, 6T2 are provided to face each other in the Y-axis direction with at least a portion of the channel region CA therebetween, so that external incident light onto the semiconductor layer 51 can be more effectively blocked.

[0071] 4. Modifications of the Second Embodiment Next, as some modifications of the second embodiment, modifications 6 to 10 of the present disclosure will be described. Note that components corresponding to those of the display device 2 of the second embodiment are given the same reference numerals and descriptions thereof will be omitted.

[0072] 12A is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 2A) according to Modification 6 of the present disclosure. FIG. 12B is a schematic diagram illustrating an example of a planar configuration of display device 2A.

[0073] As shown in FIGS. 12A and 12B , the display device 2A further includes a pair of reference layers 68. The pair of reference layers 68 are provided between the pair of protrusions 6T1, 6T2 and the scanning line 11, respectively, at positions overlapping the pair of protrusions 6T1, 6T2 in the Z-axis direction. More specifically, the pair of reference layers 68 are provided so as to abut against the tips 6T1S, 6T2S of the pair of protrusions 6T1, 6T2, respectively. The reference layers 68 are made of, for example, a material with a high etching selectivity relative to the insulator 41. The constituent material of the reference layers 68 may be the same as the constituent material of the semiconductor layer 51, for example. This is because the reference layers 68 and the semiconductor layer 51 can be formed collectively in the same process.

[0074] In the display device 2A, since the pair of reference layers 68 are provided, during the manufacturing process of the display device 2A, for example, when a pair of grooves for embedding the pair of protrusions 6T1 and 6T2 is formed in the insulator 41, the depth of the pair of grooves can be easily controlled. For example, when etching a portion of the insulator 41 to form the pair of grooves, over-etching can be considered to cause a manufacturing error in the depth of the grooves, but by providing the pair of reference layers 68 in advance, such a manufacturing error can be avoided. Therefore, according to the display device 2A, it is possible to reduce variation in the distance in the Z-axis direction between the tips 6T1S and 6T2S of the pair of protrusions 6T1 and 6T2 and the scanning line 11.

[0075] 13A is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 2B) according to Modification 7 of the present disclosure. Fig. 13B is a schematic diagram illustrating an example of a planar configuration of display device 2B.

[0076] 13A and 13B, the display device 2B includes a storage capacitor 6B. The configuration of the display device 2B is such that the storage capacitor 6B further includes protrusions 6T3 and 6T4. The configuration of the display device 2B is substantially the same as the configuration of the display device 2, except that the display device 2B includes the storage capacitor 6B instead of the storage capacitor 6A.

[0077] According to the display device 2B, in addition to the protrusions 6T1 and 6T2, the protrusions 6T3 and 6T4 are further provided, thereby enabling a storage capacitor 6B with a larger capacitance value to be obtained without reducing the aperture ratio in the display area. Furthermore, the protrusions 6T3 and 6T4 are arranged to face each other in the Y-axis direction with the semiconductor layer 51 and the light shields 31 and 32 sandwiched therebetween, thereby blocking obliquely incident light that is incident on the semiconductor layer 51 from an oblique direction. As a result, according to the display device 2B, the leakage current in the thin-film transistor 5 can be further reduced, thereby enabling better display performance.

[0078] 14A is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 2C) according to Modification 8 of the present disclosure. Fig. 14B is a schematic diagram illustrating an example of a planar configuration of display device 2C.

[0079] 14A and 14B, the display device 2C includes a storage capacitor 6C. In the display device 2C, the storage capacitor 6C further includes a protrusion 6T5. The configuration of the display device 2C is substantially the same as the configuration of the display device 2, except that the display device 2C includes a storage capacitor 6C instead of the storage capacitor 6A.

[0080] In the display device 2C, a protrusion 6T5 that protrudes in the -Z direction from the main body 60 toward the scanning line 11 is provided at the end of the storage capacitor 6C in the Y-axis direction. According to the display device 2C, since the protrusion 6T5 is further provided in addition to the protrusions 6T1 and 6T2, it is possible to obtain a storage capacitor 6C with a larger capacitance value without reducing the aperture ratio in the display area. Therefore, according to the display device 2C, the leakage current in the thin-film transistor 5 can be further reduced, and therefore superior display performance can be achieved.

[0081] 4-4. Modification 9 FIG. 15 is a diagram schematically illustrating an example of a planar configuration of a display device (display device 2D) according to Modification 9 of the present disclosure.

[0082] As shown in FIG. 15 , the display device 2D includes a storage capacitor 6D. In the storage capacitor 6D of the display device 2D, a protrusion 6T1 extends in the X-axis direction along the lead-out portion 542 of the gate electrode 54, and a protrusion 6T2 extends in the X-axis direction along the lead-out portion 543 of the gate electrode 54. The length of each of the protrusions 6T1 and 6T2 in the X-axis direction is longer than the length of each of the lead-out portions 542 and 543 in the X-axis direction. In other words, the protrusions 6T1 and 6T2 are arranged to sandwich the entire gate electrode 54 in the Y-axis direction. The configuration of the display device 2D is substantially the same as the configuration of the display device 2, except that the display device 2D includes a storage capacitor 6D instead of the storage capacitor 6A.

[0083] In the display device 2D, the protrusions 6T1 and 6T2 extend in the X-axis direction along the lead-out portions 542 and 543, respectively, and the protrusions 6T1 and 6T2 are arranged to sandwich the entire gate electrode 54 in the Y-axis direction. This makes it possible to obtain a storage capacitor 6D with a larger capacitance value. Furthermore, it is possible to sufficiently block incident light that is incident on the semiconductor layer 51. As a result, the display device 2D can further reduce the leakage current in the thin-film transistor 5, thereby achieving better display performance.

[0084] 4-5. Modification 10 FIG. 16 is a schematic diagram illustrating an example of the planar configuration of a display device (display device 2E) according to Modification 10 of the present disclosure.

[0085] As shown in Figure 16, the display device 2E includes a storage capacitor 6E. In the storage capacitor 6E of the display device 2E, the protrusion 6T1 extends in the X-axis direction along the lead-out portion 542 of the gate electrode 54 and includes pedestals 6T11 and 6T12 at both ends in the X-axis direction, each extending in the Y-axis direction toward the protrusion 6T2. In the storage capacitor 6E of the display device 2E, the protrusion 6T2 further extends in the X-axis direction along the lead-out portion 543 of the gate electrode 54 and includes pedestals 6T21 and 6T22 at both ends in the X-axis direction, each extending in the Y-axis direction toward the protrusion 6T1. The configuration of the display device 2E is substantially the same as the configuration of the display device 2D shown in Figure 15, except that the display device 2E includes a storage capacitor 6E instead of the storage capacitor 6D.

[0086] In the display device 2E, the protrusions 6T1 and 6T2 extend in the X-axis direction along the lead-out portions 542 and 543, respectively, and the protrusions 6T1 and 6T2 are arranged to sandwich the entire gate electrode 54 in the Y-axis direction. The protrusion 6T1 further includes pedestals 6T11 and 6T12, and the protrusion 6T2 further includes pedestals 6T21 and 6T22. This allows for a storage capacitor 6E with a larger capacitance value. Furthermore, incident light entering the semiconductor layer 51 can be sufficiently blocked. As a result, the display device 2E can further reduce leakage current in the thin-film transistor 5, thereby achieving superior display performance.

[0087] 5. Third Embodiment 5-1. Configuration of Display Device FIG. 17 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 3) according to a third embodiment of the present disclosure.

[0088] 9 to 11, the display device 3 of the third embodiment further includes a high-dielectric film HD. The configuration of the display device 3 of the third embodiment is substantially the same as the configuration of the display device 1 of the first embodiment, except for the fact that the display device 3 further includes a high-dielectric film HD. Therefore, in the following description, the same reference numerals are used in the display device 3 for components that are substantially the same as the components included in the display device 1, and descriptions of those components will be omitted as appropriate.

[0089] The high-dielectric film HD has a higher dielectric constant than the gate insulating film 53 and is an insulating film provided between the scanning line 11 and the signal line 81. The high-dielectric film HD may contain at least one of SiNx, SiON, and SICN, for example. The high-dielectric film HD is provided in a region other than the light-transmitting region (opening region) through which light can pass in the Z-axis direction. Therefore, the high-dielectric film HD is provided, for example, in a region overlapping the scanning line 11 in the Z-axis direction. In the configuration example shown in FIG. 17 , the high-dielectric film HD is provided in the same layer as the gate insulating film 53 in the Z-axis direction. That is, the high-dielectric film HD is provided at a position overlapping the gate insulating film 53 in the in-plane direction parallel to the XY plane. Therefore, in the configuration example of the display device 3, the high-dielectric film HD is not present in the region sandwiched between the semiconductor layer 51 and the gate electrode 54 in the Z-axis direction. That is, the high-dielectric film HD is not provided in the portion of the semiconductor layer 51 covering the channel region CA. The high dielectric film HD is provided at a position overlapping the LDD region 512 and the LDD region 522 in the Z-axis direction.

[0090] [5-2. Actions and Effects] In recent years, there has been a demand for higher brightness, higher definition, improved reliability, etc. in display devices used in projectors, etc. In such display devices, transistors made of non-single-crystal semiconductors are used to drive pixels and peripheral circuits, and therefore improving the reliability of these transistors is an important issue.

[0091] Generally, the characteristics of transistors deteriorate due to defects called dangling bonds. Dangling bonds are dangling bonds in atoms. The presence of such dangling bonds is undesirable because they result in unpaired electrons with no bond partners, making them highly chemically active and unstable. Therefore, hydrogenation treatment, which terminates the dangling bonds with hydrogen, is desirable. Insufficient hydrogenation treatment not only deteriorates transistor characteristics but can also cause image quality degradation, such as dark spots and uneven brightness, when displaying images on a display device. Therefore, the display device 3 of this embodiment employs a structure that enables efficient hydrogenation of the thin-film transistor 5.

[0092] Specifically, as described above, the high-dielectric film HD is disposed in the vicinity of the thin-film transistor 5. The high-dielectric film HD can retain hydrogen and serves as a hydrogen supply source for the semiconductor layer 51 of the thin-film transistor 5. That is, hydrogen contained in the high-dielectric film HD can be desorbed and diffused into the thin-film transistor 5. This promotes hydrogenation in the thin-film transistor 5, making it possible to suppress deterioration of the initial characteristics (current characteristics and S value) of the thin-film transistor 5 and to suppress deterioration over time due to hot carriers. Furthermore, it becomes possible to suppress deterioration in the quality of the displayed image and a decrease in the reliability of the display device due to insufficient hydrogenation.

[0093] Furthermore, there is a possibility that the dielectric strength of the high dielectric film HD may be reduced due to hydrogen desorption from the high dielectric film HD. However, in the display device 3, the high dielectric film HD is not present in the region sandwiched between the gate electrode 54 and the semiconductor layer 51 in the Z-axis direction, and therefore the dielectric strength between the gate electrode 54 and the semiconductor layer 51 can be maintained satisfactorily.

[0094] 6. Modifications of the Third Embodiment Next, as some modifications of the third embodiment, modifications 11 to 16 of the present disclosure will be described. Note that components corresponding to the display device 3 of the third embodiment are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0095] 6-1. Modification 11 FIG. 18 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 3A) according to Modification 11 of the present disclosure.

[0096] 18, in the display device 3A, the high dielectric film HD is provided at a position where it overlaps both the gate insulating film 53 and the gate electrode 54 in the in-plane direction parallel to the XY plane. Therefore, the thickness of the high dielectric film HD of the display device 3A is greater than that of the display device 3. Except for the above points, the configuration of the display device 3A is substantially the same as the configuration of the display device 3.

[0097] In the display device 3A, the thickness of the high dielectric film HD is made larger than that of the display device 3, so that the leakage current when the thin film transistor 5 is in the off state can be reduced.

[0098] 6-2. Modification 12 FIG. 19 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 3B) according to Modification 12 of the present disclosure.

[0099] 19, in the display device 3B, the high dielectric film HD is provided in a layer between the gate electrode 54 and the signal line 81 in the Z-axis direction. More specifically, the high dielectric film HD is provided between the gate electrode 54 and the storage capacitor 6 in the Z-axis direction. However, in the display device 3B, the high dielectric film HD is also provided in a region overlapping with the channel region CA in the Z-axis direction. Except for the above points, the configuration of the display device 3B is substantially the same as the configuration of the display device 3.

[0100] In the display device 3B, similarly to the display device 3, the high dielectric film HD serves as a hydrogen supply source for the thin film transistor 5, and can efficiently hydrogenate the thin film transistor 5. Therefore, the display device 3B makes it possible to suppress deterioration in the quality of the displayed image and a decrease in reliability due to insufficient hydrogenation treatment.

[0101] 6-3. Modification 13 FIG. 20 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 3C) according to Modification 13 of the present disclosure.

[0102] 20, the display device 3C further includes a diffusion prevention film PS located on the opposite side of the gate electrode 54 from the high-dielectric film HD in the Z-axis direction. Except for the above points, the configuration of the display device 3C is substantially the same as the configuration of the display device 3B (FIG. 19). The diffusion prevention film PS is made of, for example, SiC, and suppresses the migration of hydrogen.

[0103] In the display device 3C, as in the display device 3B, the high-dielectric film HD serves as a hydrogen supply source for the thin-film transistor 5, enabling efficient hydrogenation of the thin-film transistor 5. In particular, since the diffusion barrier film PS is provided above the high-dielectric film HD, more hydrogen can be diffused toward the thin-film transistor 5 that is located in a direction not blocked by the diffusion barrier film PS. Therefore, with the display device 3C, it is possible to further suppress degradation of the image quality and reliability of the displayed image that are caused by insufficient hydrogenation.

[0104] 6-4. Modification 14 FIG. 21 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 3D) according to Modification 14 of the present disclosure.

[0105] 21 , in the display device 3D, the high dielectric film HD is provided in a layer between the gate electrode 54 and the signal line 81 in the Z-axis direction. More specifically, the high dielectric film HD is provided between the gate electrode 54 and the storage capacitor 6 in the Z-axis direction. However, in the display device 3D, the high dielectric film HD is provided in an area other than the area where the gate electrode 54 and the signal line 81 overlap in the Z-axis direction. Except for the above points, the configuration of the display device 3D is substantially the same as the configuration of the display device 3B.

[0106] In the display device 3D, as in the display device 3, the high-dielectric film HD serves as a hydrogen supply source for the thin-film transistor 5, thereby enabling efficient hydrogenation of the thin-film transistor 5. Therefore, the display device 3B can suppress degradation of the display image quality and reliability due to insufficient hydrogenation. Furthermore, in the display device 3D, the high-dielectric film HD is provided in a region other than the region where the gate electrode 54 and the signal line 81 overlap in the Z-axis direction. This reduces the influence of parasitic capacitance caused by the potential of the gate electrode 54 and the potential of the signal line 81 compared to when the high-dielectric film HD is provided in the region where the gate electrode 54 and the signal line 81 overlap in the Z-axis direction. In other words, fluctuations in the potential of the signal line 81 due to parasitic capacitance caused by the potential of the gate electrode 54 and the potential of the signal line 81 can be suppressed. As a result, a good image can be obtained.

[0107] 6-5. Modification 15 FIG. 22 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 3E) according to Modification 15 of the present disclosure.

[0108] As shown in FIG. 22, in a display device 3E, a high-dielectric film HD is provided in a layer between a semiconductor layer 51 and a scanning line 11 in the Z-axis direction.

[0109] In the display device 3E, similarly to the display device 3, the high dielectric film HD disposed near the semiconductor layer 51 serves as a hydrogen supply source for the thin film transistor 5, thereby enabling efficient hydrogenation of the thin film transistor 5. Therefore, in the display device 3E as well, it is possible to suppress deterioration in the quality of the displayed image and a decrease in reliability due to insufficient hydrogenation treatment.

[0110] 6-6. Modification 16 FIG. 23 is a schematic diagram illustrating an example of a cross-sectional configuration of a display device (display device 3F) according to Modification 16 of the present disclosure.

[0111] 23, the display device 3F further includes a shielding film SL. The shielding film SL is located on the opposite side of the high dielectric film HD from the semiconductor layer 51 in the Z-axis direction. More specifically, the shielding film SL is provided so as to cover the surface of the high dielectric film HD that faces the scanning lines 11. The shielding film SL is made of a material having light-blocking properties, such as WSi. Except for the above points, the configuration of the display device 3F is substantially the same as the configuration of the display device 3E.

[0112] In the display device 3F, as in the display device 3E, the high-dielectric film HD disposed near the semiconductor layer 51 serves as a hydrogen supply source for the thin-film transistor 5, thereby enabling efficient hydrogenation of the thin-film transistor 5. Therefore, in the display device 3F, it is possible to suppress degradation of the image quality and reliability of the displayed image due to insufficient hydrogenation. Furthermore, since the shielding film SL is provided between the semiconductor layer 51 and the scanning line 11, it is possible to block stray light incident from below the thin-film transistor 5 and to suppress the generation of off-current due to the potential of the scanning line 11, thereby stabilizing the operation of the thin-film transistor 5.

[0113] 7. Application Example Application Example to Endoscopic Surgery System The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0114] FIG. 24 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0115] 24 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0116] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0117] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0118] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected by the optical system onto the image sensor. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0119] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various types of image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0120] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0121] The light source device 11203 is composed of a light source such as an LED (light emitting diode), and supplies the endoscope 11100 with irradiation light when photographing the surgical site, etc.

[0122] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0123] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0124] The light source device 11203, which supplies illumination light to the endoscope 11100 when photographing the surgical site, can be configured from a white light source, such as an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, allowing the light source device 11203 to adjust the white balance of the captured image. In this case, it is also possible to time-share images corresponding to each RGB by irradiating the object of observation with laser light from each RGB laser light source and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, color images can be obtained without providing a color filter to the image sensor.

[0125] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free from so-called blocked-up shadows and blown-out highlights.

[0126] The light source device 11203 may also be configured to supply light in a predetermined wavelength range compatible with special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, in what is known as narrow band imaging. Alternatively, special light observation may involve fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light onto the body tissue. Fluorescence observation may involve irradiating excitation light onto the body tissue and observing the fluorescence from the body tissue (autofluorescence observation), or irradiating the body tissue with excitation light corresponding to the fluorescent wavelength of a reagent such as indocyanine green (ICG) to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light compatible with such special light observation.

[0127] FIG. 25 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0128] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0129] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0130] The imaging unit 11402 may include one imaging element (a so-called single-chip type) or multiple imaging elements (a so-called multi-chip type). When the imaging unit 11402 is configured as a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (dimensional) display. The 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0131] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0132] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0133] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0134] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0135] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0136] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0137] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0138] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0139] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102 .

[0140] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0141] Furthermore, the control unit 11413 displays the captured image showing the surgical site, etc., on the display device 11202 based on the image signal subjected to image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0142] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for electrical signal communication, an optical fiber for optical communication, or a composite cable of these.

[0143] In the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0144] The above describes an example of an endoscopic surgery system to which the technology disclosed herein can be applied. The technology disclosed herein can be applied to the imaging unit 11402 among the components described above. Applying the technology disclosed herein to the imaging unit 11402 improves detection accuracy.

[0145] Although an endoscopic surgery system has been described as an example here, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0146] (Application Example to Mobile Object) The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile object, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot, construction machinery, or agricultural machinery (tractor).

[0147] FIG. 26 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0148] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 26, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0149] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0150] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0151] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0152] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0153] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0154] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0155] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0156] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0157] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 11, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0158] FIG. 27 is a diagram showing an example of the installation position of the imaging unit 12031.

[0159] In FIG. 27, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0160] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0161] 27 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0162] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0163] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0164] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0165] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0166] The foregoing has described an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the imaging unit 12031 of the above-described configuration. Specifically, the display device according to the above-described embodiment and its modified example (e.g., display device 1A) can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it is possible to obtain a high-resolution captured image with little noise, thereby enabling high-precision control using the captured image in the mobile object control system.

[0167] Although the present technology has been described above by way of embodiments, modifications, and application examples, the present technology is not limited to the above embodiments, etc., and various modifications are possible. For example, it is not necessary to include all of the components described in the above embodiments, etc., and conversely, other components may be included.

[0168] Furthermore, in the above-described embodiments, each component constituting the display device 1 etc. has been specifically listed and described, but it is not necessary to include all components, and other components may also be included.

[0169] The effects described in this specification are merely examples and are not limited to those described, and other effects may also be obtained.

[0170] According to the display device of the present disclosure, the contact portion electrically connecting the transistor and the signal line has a structure in which a first plug, an intermediate layer, and a second plug are arranged in this order in the first direction. Therefore, in the present disclosure, compared to a case in which the contact portion is configured with an integrated plug extending in the first direction from the signal line to the transistor, for example, manufacturing errors in the dimensions of the contact portion can be reduced, and the dimensional accuracy of the contact portion in the first direction can be particularly improved. This ensures an appropriate distance between the contact portion and other components in the first direction, thereby suppressing the occurrence of unintended parasitic capacitance. As a result, improved operating performance of the display device 1 can be expected. The present disclosure can also be configured as follows. (1) A display device comprising: a transistor having a semiconductor layer; a signal line stacked on the transistor in a first direction; and a contact portion provided between the semiconductor layer and the signal line in the first direction and electrically connecting the transistor and the signal line, wherein the contact portion has a first plug, an intermediate layer, and a second plug, in that order in the first direction, the first plug electrically connecting the semiconductor layer and the intermediate layer, and the second plug electrically connecting the intermediate layer and the signal line. (2) The display device according to (1), wherein the intermediate layer contains at least one of WSi, Si, W, Al, Cu, AlSi, AlCu, Ti, and TiN. (3) The display device according to (1) or (2), wherein the intermediate layer has an optical reflectance lower than that of polysilicon. (4) The display device according to any one of (1) to (3), wherein the intermediate layer has optical absorption properties. (5) The display device according to any one of (1) to (4), wherein the intermediate layer includes a first portion that is in contact with the first plug and overlaps with the semiconductor layer in the first direction. (6) The display device according to any one of (1) to (5), wherein a diameter of the second plug extending in the first direction becomes larger as it approaches the signal line from the intermediate layer. (7) The display device according to any one of (1) to (6), further including a scanning line provided on the opposite side of the signal line as viewed from the transistor in the first direction.(8) The display device according to (7), wherein the scanning line has one or more openings. (9) The display device according to (7) or (8), wherein the scanning line has a length substantially equal to that of the semiconductor layer in a second direction perpendicular to the first direction. (10) The display device according to (8), wherein the intermediate layer includes a second portion that contacts the second plug and overlaps with the opening of the scanning line in the first direction. (11) The display device according to any one of (1) to (10), further comprising a storage capacitor that is provided between the signal line and the transistor in the first direction, at a position overlapping with the transistor, and is electrically connected to the transistor. (12) The display device according to (11), wherein the transistor further has a gate electrode that is provided between the semiconductor layer and the storage capacitor in the first direction, at a position overlapping with the semiconductor layer. (13) The display device according to (12), wherein the intermediate layer is provided in a layer between the storage capacitor and the gate electrode in the first direction. (14) The display device according to (12) or (13), wherein the intermediate layer is provided at the same level as the gate electrode in the first direction. (15) The display device according to (14), wherein the intermediate layer has the same configuration as the gate electrode. (16) The display device according to any one of (1) to (14), wherein the intermediate layer includes a first portion that contacts the first plug and overlaps with the semiconductor layer in the first direction, and a second portion that contacts the second plug and is located at a different position from the first portion in an in-plane direction perpendicular to the first direction. (17) The display device according to (16), wherein the position of an upper surface of the first portion and the position of an upper surface of the second portion are different in the first direction.(18) A display device comprising: a transistor having a semiconductor layer, a gate insulating film, and a gate electrode stacked in this order in a first direction; a scanning line located on the opposite side of the gate electrode as seen from the semiconductor layer in the first direction and extending in a second direction perpendicular to the first direction; a pair of light shields, each electrically connecting the gate electrode and the scanning line and arranged opposite each other in the second direction with the semiconductor layer sandwiched therebetween; and a storage capacitor having: a main body portion located on the opposite side of the scanning line as seen from the gate electrode in the first direction and covering a channel region of the semiconductor layer that overlaps with the gate electrode in the first direction; and a pair of protrusions each protruding from the main body portion toward the scanning line and arranged opposite each other in the second direction with the semiconductor layer and the pair of light shields sandwiched therebetween. (19) The display device according to (18) above, wherein the semiconductor layer is positioned to overlap with a portion of each of the pair of protrusions in a planar direction perpendicular to the first direction. (20) The display device according to (18) or (19) above, wherein the pair of protrusions are arranged opposite each other in the second direction with the channel region sandwiched therebetween. (21) The display device according to any one of (18) to (20), wherein the storage capacitor has a stacked structure of a conductor layer and a dielectric layer. (22) The display device according to any one of (18) to (21), further comprising a light-shielding layer located on the opposite side of the gate electrode as seen from the storage capacitor in the first direction and overlapping with at least a portion of the storage capacitor in the first direction. (23) The display device according to (22), wherein the light-shielding layer contains at least one of WSi, Si, W, Al, Cu, AlSi, AlCu, Ti, and TiN. (24) A display device comprising: a transistor having a semiconductor layer, a gate insulating film, and a gate electrode stacked in this order in the first direction; a scanning line located on the opposite side of the gate electrode as seen from the semiconductor layer in the first direction; a signal line located on the opposite side of the scanning line as seen from the transistor in the first direction; and a high-dielectric film having a dielectric constant higher than that of the gate insulating film and provided between the scanning line and the signal line.(25) The display device according to (24) above, wherein the high-dielectric film contains at least one of SiNx, SiON, and SICN. (26) The display device according to (24) or (25) above, wherein the high-dielectric film is provided in a region other than a light-transmitting region through which light can pass in the first direction. (27) The display device according to (26) above, wherein the high-dielectric film is provided in a region overlapping with the scanning line in the first direction. (28) The display device according to any one of (24) to (27) above, wherein the high-dielectric film is provided in the same layer as the layer in which the gate insulating film is provided in the first direction. (29) The display device according to any one of (24) to (27) above, wherein the high-dielectric film is provided in a layer between the gate electrode and the signal line in the first direction. (30) The display device according to (29) above, further comprising a diffusion prevention film located on the opposite side of the gate electrode as seen from the high-dielectric film in the first direction, and which suppresses migration of hydrogen. (31) The display device according to (29) or (30) above, wherein the high dielectric film is provided in a region other than a region where the gate electrode and the signal line overlap in the first direction. (32) The display device according to any one of (24) to (27) above, wherein the high dielectric film is provided in a layer between the semiconductor layer and the scanning line in the first direction. (33) The display device according to (32) above, further comprising a shielding film located on the opposite side of the semiconductor layer as viewed from the high dielectric film in the first direction.

[0171] This application claims priority based on Japanese Patent Application No. 2024-105561, filed on June 28, 2024, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0172] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. A display device comprising: a transistor having a semiconductor layer; a signal line stacked on the transistor in a first direction; and a contact portion provided between the semiconductor layer and the signal line in the first direction and electrically connecting the transistor and the signal line, wherein the contact portion has a first plug, an intermediate layer, and a second plug, arranged in that order in the first direction, the first plug electrically connecting the semiconductor layer and the intermediate layer, and the second plug electrically connecting the intermediate layer and the signal line.

2. The display device according to claim 1, wherein the intermediate layer contains at least one of WSi, Si, W, Al, Cu, AlSi, AlCu, Ti, and TiN.

3. The display device according to claim 1, wherein the intermediate layer has a light reflectance lower than that of polysilicon.

4. The display device according to claim 1, wherein the intermediate layer has light absorption properties.

5. The display device according to claim 1, wherein the intermediate layer includes a first portion that contacts the first plug and overlaps with the semiconductor layer in the first direction.

6. The display device according to claim 1, wherein the diameter of the second plug extending in the first direction becomes larger as it approaches the signal line from the intermediate layer.

7. The display device according to claim 1, further comprising a scanning line provided on the opposite side of the signal line as viewed from the transistor in the first direction.

8. The display device according to claim 7, wherein the scanning line has one or more openings.

9. The display device according to claim 7, wherein the scanning lines have dimensions in a second direction perpendicular to the first direction that are substantially the same as dimensions of the semiconductor layer.

10. The display device according to claim 8, wherein the intermediate layer includes a second portion that contacts the second plug and overlaps with the opening of the scanning line in the first direction.

11. The display device according to claim 1, further comprising a storage capacitor that is provided between the signal line and the transistor in the first direction, at a position overlapping the transistor, and is electrically connected to the transistor.

12. The display device according to claim 11, wherein the transistor further has a gate electrode located between the semiconductor layer and the storage capacitor in the first direction and overlapping with the semiconductor layer in the first direction.

13. The display device according to claim 12, wherein the intermediate layer is provided in a layer between the storage capacitor and the gate electrode in the first direction.

14. The display device according to claim 12, wherein the intermediate layer is provided at the same level as the gate electrode in the first direction.

15. The display device according to claim 14, wherein the intermediate layer has the same structure as the gate electrode.

16. The display device according to claim 1, wherein the intermediate layer includes a first portion that contacts the first plug and overlaps with the semiconductor layer in the first direction, and a second portion that contacts the second plug and is located at a different position from the first portion in an in-plane direction perpendicular to the first direction.

17. The display device according to claim 16, wherein the position of the top surface of the first portion and the position of the top surface of the second portion are different in the first direction.

18. A display device comprising: a transistor having a semiconductor layer, a gate insulating film, and a gate electrode stacked in this order in a first direction; a scanning line located on the opposite side of the gate electrode as viewed from the semiconductor layer in the first direction and extending in a second direction perpendicular to the first direction; a pair of light shields, each electrically connecting the gate electrode and the scanning line, arranged opposite each other with the semiconductor layer sandwiched in the second direction; a main body portion located on the opposite side of the scanning line as viewed from the gate electrode in the first direction and covering a channel region of the semiconductor layer that overlaps with the gate electrode in the first direction; and a storage capacitor having a pair of protrusions each protruding from the main body portion toward the scanning line and arranged opposite each other with the semiconductor layer and the pair of light shields sandwiched in the second direction.

19. The display device according to claim 18, wherein the semiconductor layer is positioned so as to overlap a portion of each of the pair of protrusions in a planar direction perpendicular to the first direction.

20. The display device according to claim 18, wherein the pair of protrusions are provided so as to face each other in the second direction with the channel region interposed therebetween.

21. The display device according to claim 18, wherein the storage capacitor has a laminated structure of a conductive layer and a dielectric layer.

22. The display device according to claim 18, further comprising a light-shielding layer located on the opposite side of the gate electrode from the storage capacitor in the first direction and overlapping at least a portion of the storage capacitor in the first direction.

23. The display device according to claim 22, wherein the light-shielding layer contains at least one of WSi, Si, W, Al, Cu, AlSi, AlCu, Ti, and TiN.

24. A display device comprising: a transistor having a semiconductor layer, a gate insulating film, and a gate electrode stacked in this order in a first direction; a scanning line located on the opposite side of the gate electrode as viewed from the semiconductor layer in the first direction; a signal line located on the opposite side of the scanning line as viewed from the transistor in the first direction; and a high-dielectric film having a higher dielectric constant than the gate insulating film and provided between the scanning line and the signal line.

25. The display device according to claim 24, wherein the high dielectric film contains at least one of SiNx, SiON, and SiCN.

26. The display device according to claim 24, wherein the high dielectric film is provided in an area other than the light-transmitting area through which light can be transmitted in the first direction.

27. The display device according to claim 26, wherein the high dielectric film is provided in an area overlapping the scanning line in the first direction.

28. The display device according to claim 24, wherein the high dielectric film is provided at the same level as the level at which the gate insulating film is provided in the first direction.

29. The display device according to claim 24, wherein the high dielectric film is provided in a layer between the gate electrode and the signal line in the first direction.

30. The display device according to claim 29, further comprising a diffusion prevention film that is located on the opposite side of the gate electrode from the high dielectric film in the first direction and that suppresses the movement of hydrogen.

31. The display device according to claim 29, wherein the high dielectric film is provided in an area other than an area where the gate electrode and the signal line overlap in the first direction.

32. The display device according to claim 24, wherein the high-dielectric film is provided in a layer between the semiconductor layer and the scanning line in the first direction.

33. The display device according to claim 32, further comprising a shielding film located on the opposite side of the high dielectric film from the semiconductor layer in the first direction.

Images