Resonator structure and quantum sensor system comprising same

Abstract

This resonator structure of a quantum sensor system comprises: a substrate having an NV diamond structure disposed therein; a first resonator disposed on a first surface of the substrate on the Z-axis and formed of a first loop structure surrounding the NV diamond structure; and a second resonator disposed on a second surface of the substrate on the Z-axis and formed of a second loop structure surrounding the NV diamond structure. The first loop structure of the first resonator and the second loop structure of the second resonator are formed as a symmetrical structure having the same shape on the XY plane.

Description

Resonator structure and quantum sensor system including the same

[0001] The present invention relates to a resonator structure and a quantum sensor system comprising the same. More specifically, the present invention relates to a quantum sensor system comprising a resonator structure with enhanced sensor sensitivity.

[0002] Diamond crystals, composed of carbon atoms, develop lattice defects when carbon atoms are replaced by other types of atoms. These defects are called nitrogen-vacancy centers, where one carbon atom is replaced by a nitrogen atom, leaving a vacant space behind.

[0003] The nitrogen-vacancy (NV) diamond structure has an electron spin with a spin number (S) of 1, and the spin quantum can have three spin states (ms): +1, 0, and -1. In the absence of an external magnetic field along the axis of the nitrogen vacancy in the diamond, the spin quantum of the +1 and -1 spin states (ms) overlap and exist at similar energy levels.

[0004] When a 532 nm wavelength light source is irradiated on the NV diamond structure, the quantum in the spin state (ms=0) is excited and then returns to the ground state while emitting light of 600 nm or more. The quantum in the spin state (ms=+1) and spin state (ms=-1) is excited and then returns to the ground state while changing to the spin state (ms=0).

[0005] When an external magnetic field is applied along the axis of the nitrogen vacancy in the NV diamond structure, the Zeeman effect causes the spin quantum superposition of the +1 and -1 spin states (ms) of the nitrogen vacancy to disappear, and they exist at different energy levels. Accordingly, the nitrogen vacancy spin quantum has two resonant frequencies corresponding to the spin transition between the spin state (ms = 0) and the spin state (ms = +1) or between the spin state (ms = 0) and the spin state (ms = -1). The difference between the two resonant frequencies is proportional to the magnitude of the external magnetic field.

[0006] Meanwhile, quantum sensor systems, which measure magnetic fields through the difference between two resonant frequencies, require an optical receiver, such as a photodetector. These systems suffer from the problem of reduced sensor sensitivity due to the generation of eddy currents when the magnetic field generated by the resonator reaches the photodetector.

[0007] An object of the present specification is to provide a quantum sensor system having a resonator with improved sensor sensitivity.

[0008] The purpose of this specification is to form a symmetrical magnetic field inside a resonator to improve sensor sensitivity.

[0009] The purpose of this specification is to form a uniform magnetic field inside a resonator to improve sensor sensitivity.

[0010] The purpose of this specification is to improve sensor sensitivity by reducing eddy current when a magnetic field generated from a resonator reaches a photodetector.

[0011] A resonator structure of a quantum sensor system according to the present specification includes a substrate having an NV diamond structure disposed therein; a first resonator disposed on a first surface of the substrate along the Z-axis and formed as a first loop structure surrounding the NV diamond structure; and a second resonator disposed on a second surface of the substrate along the Z-axis and formed as a second loop structure surrounding the NV diamond structure. The first loop structure of the first resonator and the second loop structure of the second resonator are formed as symmetrical structures having the same shape on the XY plane.

[0012] According to an embodiment, the first resonator may include a first feed line formed with a first length and a first width to transmit an RF signal; a first circular structure made of a metal material operably coupled to the first feed line and having a first inner diameter and a second width; and a second circular structure made of a metal material arranged to surround the first circular structure and having a second inner diameter and a third width.

[0013] According to an embodiment, the resonator structure may further include a hole formed in the substrate with a predetermined radius so that the NV diamond structure is inserted therein and passes an optical signal from a light source disposed at a lower portion of the substrate. The radius of the hole may be formed to be smaller than the second inner diameter of the first resonator.

[0014] In an embodiment, the second resonator may include a third circular structure made of a metal material having the first inner diameter and the second width; a fourth circular structure made of a metal material arranged to surround the third circular structure and having the second inner diameter and the third width; and a second feed line operably coupled to the third circular structure and formed with the first length and the first width so as to transmit the RF signal.

[0015] According to an embodiment, the second resonator may include a third slot region in which a metal is removed from an upper region in the uniaxial direction from the center of the third circular structure, so that a third dielectric region having the first slot width in the uniaxial direction is formed; and a fourth slot region in which a metal is removed from a lower region in the uniaxial direction from the center of the fourth circular structure, so that a fourth dielectric region having the second slot width in the uniaxial direction is formed.

[0016] According to an embodiment, the first circular structure and the second circular structure may be disposed on the same coordinates on the XY plane of the first surface and the second surface of the substrate, and the third circular structure and the fourth circular structure may be disposed on the same coordinates on the XY plane of the first surface and the second surface of the substrate. The NV diamond structure may be disposed in an inner region of the second circular structure and an inner region of the fourth circular structure.

[0017] According to an embodiment, the first slot region and the third slot region may be arranged symmetrically with the same distance apart from the center on the other axis perpendicular to the one axis. The third slot region and the fourth slot region may be arranged symmetrically with the same distance apart from the center on the other axis.

[0018] According to an embodiment, the resonator structure may further include a first substrate, on which the first resonator is formed on a second surface, a first ground is formed on a first surface, and the first resonator is laminated upward in the Z-axis direction of the substrate so as to face the NV diamond structure; and a second substrate, on which the second resonator is formed on the first surface, a second ground is formed on the second surface, and the second resonator is laminated downward in the Z-axis direction of the substrate so as to face the NV diamond structure.

[0019] According to an embodiment, the resonator structure may further include: a third feed line formed with the first width on a first surface of the first substrate on which the first ground is disposed; a first via vertically connecting the first feed line and the third feed line; a fourth feed line formed with the first width on a second surface of the second substrate on which the second ground is disposed; and a second via vertically connecting the second feed line and the fourth feed line. A fifth slot area having a rectangular shape from which the first ground is removed may be formed in an area where the third feed line is formed, and a sixth slot area having a rectangular shape from which the second ground is removed may be formed in an area where the fourth feed line is formed.

[0020] According to an embodiment, a second surface of the first substrate may be in contact with the first resonator, and a first surface of the second substrate may be in contact with the second resonator. The resonator structure may include a first ground made of a metal material laminated on the first surface of the first substrate; and a second ground made of a metal material laminated on the second surface of the second substrate.

[0021] According to an embodiment, the first thickness of the first substrate and the second thickness of the second substrate may be formed to be the same. The first permittivity of the first substrate and the second permittivity of the second substrate may be formed to be the same.

[0022] According to an embodiment, the permittivity of the substrate between the first resonator and the second resonator may be formed to be smaller than the first permittivity of the first substrate. The permittivity of the substrate between the first resonator and the second resonator may be formed to be smaller than the second permittivity of the second substrate.

[0023] According to an embodiment, the thickness of the substrate between the first resonator and the second resonator may be formed smaller than the first thickness of the first substrate. The thickness of the substrate between the first resonator and the second resonator may be formed smaller than the second thickness of the second substrate.

[0024] According to an embodiment, the resonator structure may further include a first connector disposed on a first side of the first substrate, the first connector having an inner conductor connected to the third feed line connected to the first feed line through the first via, and an outer conductor connected to the first ground; and a second connector disposed on a second side of the second substrate, the second connector having an inner conductor connected to the fourth feed line connected to the second feed line through the second via, and an outer conductor connected to the second ground.

[0025] According to another aspect of the present disclosure, a quantum sensor system includes an NV diamond structure configured to emit a second optical signal of a second wavelength when a first optical signal of a first wavelength and an RF signal of a specific frequency band are applied thereto; and a resonator structure operably coupled to the NV diamond structure and configured to radiate the RF signal to the NV diamond. The resonator structure includes a first resonator disposed on a first surface along the Z-axis of a substrate having the NV diamond structure disposed therein and formed with a first loop structure surrounding the NV diamond structure; and a second resonator disposed on a second surface along the Z-axis of the substrate and formed with a second loop structure surrounding the NV diamond structure. The first loop structure of the first resonator and the second loop structure of the second resonator may be formed as a symmetrical structure having the same shape on an XY plane.

[0026] According to the present specification, the sensor sensitivity of a quantum sensor system can be improved by forming a uniform magnetic field inside a resonator.

[0027] According to the present specification, the sensor sensitivity of a quantum sensor system can be improved by forming a symmetrical magnetic field inside a resonator.

[0028] According to the present specification, the sensor sensitivity of a quantum sensor system can be improved by uniformly and symmetrically forming a magnetic field of the same intensity inside a resonator.

[0029] According to the present specification, a shielding layer can be formed in the upper and lower regions of the resonator to reduce eddy current when a magnetic field generated in the resonator reaches a photodetector.

[0030] Figure 1 shows the NV diamond structure and electron spin analysis results used in a quantum sensor system.

[0031] Figure 2 shows the energy band diagram of the NV diamond structure and the luminescence intensity according to spin.

[0032] Figure 3 shows the change in energy diagram and florescence change according to frequency according to the application of a magnetic field.

[0033] FIG. 4 shows a perspective view of a resonator structure of a quantum sensor system according to the present specification.

[0034] Fig. 5 shows a cross-sectional view of the resonator structure of the quantum sensor system of Fig. 4.

[0035] Fig. 6 shows a front view of the first and second resonators in the resonator structure of the quantum sensor system of Fig. 4.

[0036] Figure 7 shows a cross-sectional view of a resonator structure in which resonators are arranged on the same plane.

[0037] Fig. 8 shows the magnetic field distribution inside a resonator structure having the resonator of Fig. 7.

[0038] Fig. 9 shows the magnetic field distribution on the side of the resonator structure having the resonator of Fig. 7.

[0039] Figure 10 shows a conceptual diagram in which a magnetic field generated in a resonator generates an eddy current in a photodiode.

[0040] Figures 11 to 13 show the magnetic fields of the resonator structures of Figures 4 to 6.

[0041] Figure 14 shows a structure in which the first and second feed lines of the resonator structure are connected through the first and second connectors.

[0042] Fig. 15 illustrates the configuration of a quantum system including a plurality of components according to the first embodiment.

[0043] Fig. 16 illustrates the configuration of a quantum system including a plurality of components according to the second embodiment.

[0044] The technology disclosed herein is applicable to a quantum sensor system that measures magnetic fields. However, the technology disclosed herein is not limited thereto and can be applied to any quantum sensor system that measures magnetic fields to which the technical principles of the technology can be applied.

[0045] It should be noted that the technical terms used in this specification are used merely to describe specific embodiments and are not intended to limit the present invention. Furthermore, unless specifically defined otherwise herein, the technical terms used herein should be interpreted as having a meaning generally understood by those skilled in the art to which the present invention pertains, and should not be interpreted in an excessively broad or narrow sense. Furthermore, if a technical term used herein is incorrect and does not accurately express the spirit of the present invention, it should be replaced with a technical term that can be correctly understood by those skilled in the art. Furthermore, general terms used herein should be interpreted according to their dictionary definitions or according to the context, and should not be interpreted in an excessively narrow sense.

[0046] Additionally, the singular expressions used herein include plural expressions unless the context clearly dictates otherwise. In this application, terms such as "consist of" or "comprises" should not be construed to necessarily include all of the various components or various steps described in the specification, and should be construed to mean that some of the components or some of the steps may not be included, or that additional components or steps may be included.

[0047] In addition, the suffixes "module" and "part" used in this specification for components are given or used interchangeably only for the convenience of writing the specification, and do not have distinct meanings or roles in themselves.

[0048] Additionally, terms including ordinal numbers, such as "first," "second," etc., used herein may be used to describe various components, but these components should not be limited by these terms. These terms are used solely to distinguish one component from another. For example, without departing from the scope of the present invention, a first component could be referred to as a "second component," and similarly, a second component could also be referred to as a "first component."

[0049] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the attached drawings. Regardless of the drawing numbers, identical or similar components are given the same reference numbers and redundant descriptions thereof will be omitted.

[0050] Furthermore, when describing the present invention, detailed descriptions of related known technologies will be omitted if they are deemed to obscure the gist of the present invention. Furthermore, it should be noted that the attached drawings are intended solely to facilitate understanding of the spirit of the present invention and should not be construed as limiting the spirit of the present invention.

[0051] In this regard, Fig. 1 illustrates the NV diamond structure used in a quantum sensor system and the results of electron spin analysis. Fig. 1(a) illustrates the NV diamond structure. Fig. 1(b) shows the wavelengths of the input and output signals incident on the NV diamond structure. Fig. 1(c) shows the change in electron spin of the NV diamond structure according to the ambient magnetic field characteristics or temperature changes.

[0052] Referring to Fig. 1(a), the NV diamond structure (10) can be configured to include nitrogen (N) and a vacancy (V). Quantum qubits can be controlled by utilizing defects in the internal atomic structure of the diamond associated with the NV diamond structure (10). An NV diamond structure (10) having an NV center structure in which a nitrogen atom is arranged between closely packed carbon (C) atoms forming the diamond and a vacancy (V) is formed can be created. Electrons can be used as qubits in the NV diamond structure (10). Quantum computers, quantum communications, quantum sensors, etc. can be implemented using the NV diamond structure (10).

[0053] Other quantum computer technologies, such as superconducting and ion dot-based quantum computers, require ultra-low temperatures or extreme vacuum conditions to manipulate sensitive qubits in a stable environment. In contrast, the diamond NV center method can operate at room temperature thanks to the surrounding solid carbon atoms. This allows for implementation without the massive cooling systems required for superconducting quantum computers.

[0054] Referring to Fig. 1(b), an RF signal having a first frequency (e.g., 2.87 GHz) can be input to the NV diamond structure (10). An optical signal having a first wavelength within a predetermined range based on 532 nm can be input (applied) to the NV diamond structure (10). A second optical signal having a second wavelength greater than the first wavelength can be output from the NV diamond structure (10). In this regard, a second optical signal having a second wavelength within a predetermined range based on 637 nm can be output (emitted) from the NV diamond structure (10). Therefore, a quantum sensor system can be implemented with an optical system configuration for detecting / analyzing an RF signal for generating / controlling a quantum state.

[0055] Referring to Fig. 1(c), the NV center electron spin of the NV diamond structure changes depending on the characteristics of the surrounding magnetic field. The resonant frequencies are separated by the Zeenman splitting phenomenon depending on the characteristics of the surrounding magnetic field. Therefore, the surrounding magnetic field characteristics of the NV diamond structure can be measured by detecting the changes in the resonant frequencies.

[0056] Fig. 2 shows an energy band diagram of an NV diamond structure and luminescence intensity according to spin. Referring to Figs. 1 and 2, when an optical signal of a first wavelength (e.g., 532 nm) is applied to an NV diamond structure (10) in a ground state, the diamond structure (10) can transition to an excited state. Accordingly, the NV diamond structure (10) can undergo an energy band transition from a valence band to a conduction band.

[0057] Meanwhile, the NV diamond structure (10) in this state can transition to the ground state while outputting an optical signal of a second wavelength (e.g., 637 nm). Accordingly, the NV diamond structure (10) can have its energy band transitioned from the conduction band to the valence band. The energy band of the NV diamond structure (10) can be arranged within the conduction band and the valence band.

[0058] If the quantum state of the NV diamond structure (10) converted from the excited state to the ground state is ±1, the luminescence intensity of the NV diamond structure (10) can be formed lower than the threshold at the second wavelength. In this regard, the NV diamond structure (10) can be formed with a higher luminescence intensity in a wavelength band higher than the second wavelength. If the quantum state of the NV diamond structure (10) converted from the excited state to the ground state is 0, the luminescence intensity of the NV diamond structure (10) can be formed higher than the threshold at the second wavelength.

[0059] Figure 3 shows the change in energy diagram and the change in florescence by frequency according to the application of a magnetic field. Figure 3(a) shows the change in energy diagram by the application of a magnetic field. Figure 3(b) shows the change in florescence by frequency according to the application of a magnetic field. Referring to Figure 3(a), when a magnetic field (B) is applied, the spacing between band structures increases due to the Zeenman splitting phenomenon caused by the magnetic field (B). Referring to Figure 3(b), when the magnetic field is 0, a single resonant frequency of 2.87 GHz is formed. On the other hand, when a magnetic field (B) is applied, dual resonance occurs at frequencies lower and higher than 2.87 GHz due to the magnetic field (B). Therefore, the measurement of the surrounding magnetic field is possible by analyzing the changed resonant frequency.

[0060] Referring to Fig. 1(c), the NV center electron spin of the NV diamond structure changes depending on the characteristics of the surrounding magnetic field. The resonant frequencies are separated by the Zeenman splitting phenomenon depending on the characteristics of the surrounding magnetic field. Therefore, the surrounding magnetic field characteristics of the NV diamond structure can be measured by detecting the changes in the resonant frequencies.

[0061] Fig. 2 shows an energy band diagram of an NV diamond structure and luminescence intensity according to spin. Referring to Figs. 1 and 2, when an optical signal of a first wavelength (e.g., 532 nm) is applied to an NV diamond structure (10) in a ground state, the diamond structure (10) can transition to an excited state. Accordingly, the NV diamond structure (10) can undergo an energy band transition from a valence band to a conduction band.

[0062] Meanwhile, the NV diamond structure (10) in this state can transition to the ground state while outputting an optical signal of a second wavelength (e.g., 637 nm). Accordingly, the NV diamond structure (10) can have its energy band transitioned from the conduction band to the valence band. The energy band of the NV diamond structure (10) can be arranged within the conduction band and the valence band.

[0063] If the quantum state of the NV diamond structure (10) converted from the excited state to the ground state is ±1, the luminescence intensity of the NV diamond structure (10) can be formed lower than the threshold at the second wavelength. In this regard, the NV diamond structure (10) can be formed with a higher luminescence intensity in a wavelength band higher than the second wavelength. If the quantum state of the NV diamond structure (10) converted from the excited state to the ground state is 0, the luminescence intensity of the NV diamond structure (10) can be formed higher than the threshold at the second wavelength.

[0064] Figure 3 shows the change in energy diagram and the change in florescence by frequency according to the application of a magnetic field. Figure 3(a) shows the change in energy diagram by the application of a magnetic field. Figure 3(b) shows the change in florescence by frequency according to the application of a magnetic field. Referring to Figure 3(a), when a magnetic field (B) is applied, the spacing between band structures increases due to the Zeenman splitting phenomenon caused by the magnetic field (B). Referring to Figure 3(b), when the magnetic field is 0, a single resonant frequency of 2.87 GHz is formed. On the other hand, when a magnetic field (B) is applied, dual resonance occurs at frequencies lower and higher than 2.87 GHz due to the magnetic field (B). Therefore, the measurement of the surrounding magnetic field is possible by analyzing the changed resonant frequency.

[0065] Hereinafter, a resonator structure of a quantum sensor system according to the present specification will be described. The quantum sensor system has a problem in that an eddy current is generated when a magnetic field generated from the resonator structure reaches a photodetector, thereby reducing sensor sensitivity. An object of the present specification is to provide a quantum sensor system having a resonator with improved sensor sensitivity. An object of the present specification is to form a symmetrical magnetic field inside the resonator to improve sensor sensitivity. An object of the present specification is to form a uniform magnetic field inside the resonator to improve sensor sensitivity. An object of the present specification is to reduce an eddy current when a magnetic field generated from the resonator reaches a photodetector, thereby improving sensor sensitivity.

[0066] In this regard, Fig. 4 illustrates a perspective view of a resonator structure of a quantum sensor system according to the present specification. Fig. 5 illustrates a cross-sectional view of the resonator structure of the quantum sensor system of Fig. 4. Fig. 6 illustrates a front view of the first and second resonators in the resonator structure of the quantum sensor system of Fig. 4.

[0067] Referring to FIGS. 4 to 6, a resonator structure (1000) of a quantum sensor system will be described. The resonator structure (1000) may be configured to include a substrate (100), a first resonator (200), and a second resonator (300). An NV diamond structure (10) may be arranged inside the substrate (100).

[0068] The first resonator (200) may be arranged on the first surface on the Z-axis of the substrate (100). The first resonator (200) may be formed as a first loop structure to surround the NV diamond structure (10). The first loop shape may be a circular ring shape of the first circular structure (210), but is not limited thereto, and may be any open loop structure or closed loop structure. The open loop structure is a structure in which one end and the other end of the first circular structure (210) are separated by a first slot region (SR1). The closed loop structure is a structure in which one end and the other end of the first circular structure (210) are connected without a slot region.

[0069] The second resonator (300) may be arranged on the second surface on the Z-axis of the substrate (100). The second resonator (300) may be formed as a second loop structure to surround the NV diamond structure (10). The second loop shape may be a circular ring shape of the third circular structure (310), but is not limited thereto, and may be any open loop structure or closed loop structure. The open loop structure is a structure in which one end and the other end of the third circular structure (310) are separated by a first slot region (SR1). The closed loop structure is a structure in which one end and the other end of the third circular structure (310) are connected without a slot region.

[0070] The first loop structure of the first resonator (200) and the second loop structure of the second resonator (300) may be formed as symmetrical structures of the same shape on the XY plane. The coordinates of the first loop structure on the XY plane may be formed to be the same as the coordinates of the second loop structure on the XY plane. The coordinates of the first slot region (SR1) of the first loop structure on the Y axis may be formed to be origin-symmetrical with the coordinates of the second slot region (SR2) of the second loop structure on the Y axis. The first and second resonators (200, 300) may have a circular ring shape. In this regard, the first loop structure may be replaced with a first circular structure (210) and the second loop structure may be replaced with a third circular structure (310).

[0071] The first resonator (200) may be disposed on the first surface of the substrate (100) or the second surface of the first substrate (100a) to apply an RF signal to the NV diamond structure (10). The second resonator (300) may be disposed on the second surface of the substrate (100) or the first surface of the second substrate (100b) to apply an RF signal to the NV diamond structure (10). Accordingly, the RF signal may be applied to the NV diamond structure (10) disposed in the inner region of the first and second loop structures of the first resonator (200) and the second resonator (300).

[0072] The first resonator (200) may be configured to include a first feed line (210f), a first circular structure (210), and a second circular structure (220). The first feed line (210f) may be formed with a first length (L1a) and a first width (W1a) so as to transmit an RF signal. The first circular structure (210) may be operably coupled to the first feed line (210f). The first circular structure (210) may be connected to the first feed line (210f) or may be disposed at a predetermined distance therefrom. For example, the first circular structure (210) may be disposed at a predetermined distance therefrom. Accordingly, the first circular structure (210) may be configured to resonate and radiate a signal of a center frequency and block unwanted signals of other frequencies.

[0073] The first circular structure (210) may be formed of a metal material having a first inner diameter (r1a) and a second width (W2a). The second circular structure (220) may be arranged to surround the first circular structure (210) and may be formed of a metal material having a second inner diameter (r2a) and a third width (W3a).

[0074] The first resonator (200) may further include a first slot region (SR1) and a second slot region (SR2). The first slot region (SR1) may be formed by removing metal from a lower region in a uniaxial direction from the center of the first circular structure (210). The first slot region (SR1) may be formed as a first dielectric region having a first slot width in the uniaxial direction. The second slot region (SR2) may be formed by removing metal from an upper region in a uniaxial direction from the center of the second circular structure (220). The second slot region (SR2) may be formed as a second dielectric region having a second slot width in the uniaxial direction.

[0075] The second resonator (300) may be configured to include a second feed line (310f), a third circular structure (310), and a fourth circular structure (320). The third circular structure (310) may be operably coupled to the second feed line (310f). The third circular structure (310) may be connected to the second feed line (310f) or may be disposed at a predetermined distance from the second feed line (310f). For example, the third circular structure (310) may be disposed at a predetermined distance from the second feed line (310f). Accordingly, the third circular structure (310) may be configured to resonate and radiate a signal at a center frequency and block unwanted signals at other frequencies.

[0076] The third circular structure (310) may be formed of a metal material having a first inner diameter (r1a) and a second width (W2a). Therefore, the third circular structure (310) may be formed to correspond to the first circular structure (210). The fourth circular structure (320) may be arranged to surround the third circular structure (310) and may be formed of a metal material having a second inner diameter (r2a) and a third width (W3a). Therefore, the fourth circular structure (320) may be formed to correspond to the second circular structure (220).

[0077] The second feed line (310f) can be operably coupled to the third circular structure (310). The second feed line (310f) can be connected to the third circular structure (310) or can be arranged at a predetermined interval. The second feed line (310f) can be formed with a first length (L1a) and a first width (W1a) so that an RF signal can be transmitted.

[0078] The second resonator (300) may further include a third slot region (SR3) and a fourth slot region (SR4). The third slot region (SR3) may be formed by removing metal from a lower region in a uniaxial direction from the center of the third circular structure (310). The third slot region (SR3) may be formed as a third dielectric region having a first slot width in a uniaxial direction. Accordingly, the third slot region (SR3) may be formed in a symmetrical structure with respect to the first slot region (SR1) at the upper / lower portions.

[0079] The fourth slot region (SR4) may be formed by removing metal from an upper region in a uniaxial direction from the center of the fourth circular structure (320). The fourth slot region (SR4) may be formed as a fourth dielectric region with a second slot width in the uniaxial direction. Accordingly, the fourth slot region (SR4) may be formed in a symmetrical structure with respect to the second slot region (SR2) at the upper / lower portions.

[0080] The structure of the first resonator (200) and the structure of the second resonator (300) may be formed on the same coordinates on the X, Y plane and may be formed in a structure that is stacked on the Z axis. In this regard, the first circular structure (210) and the second circular structure (220) may be arranged on the same coordinates on the XY plane of the first and second surfaces of the substrate (100). The third circular structure (310) and the fourth circular structure (320) may be arranged on the same coordinates on the XY plane of the first and second surfaces of the substrate (100). Meanwhile, the NV diamond structure (10) may be arranged in the inner region of the second circular structure (210) and the inner region of the fourth circular structure (310).

[0081] Meanwhile, the first resonator (200) and the second resonator (300) may be formed with slot regions having a symmetrical structure. In this regard, the first slot region (SR1) and the third slot region (SR1) may be arranged in a symmetrical structure by being spaced apart by the same distance from the center of the first and third circular structures (210, 310) on the other axis perpendicular to one axis. The second slot region (SR2) and the fourth slot region (SR4) may be arranged in a symmetrical structure by being spaced apart by the same distance from the center of the second and fourth circular structures (220, 320) on the other axis.

[0082] Meanwhile, in the resonator structure (1000) according to the present specification, a hole (10h) may be formed in the substrate (100) so that the NV diamond structure (10) is coupled thereto. The hole (10h) may be formed with a predetermined radius in the substrate (100) so that the NV diamond structure (10) may be inserted therein. The hole (10h) may be formed with a predetermined radius so as to pass an optical signal from a light source disposed below the substrate (100). Meanwhile, the radius of the hole (10h) may be formed to be smaller than the second inner diameter (r2a) of the second circular structure (220) of the first resonator (200) (and the fourth circular structure (320) of the second resonator (300). Accordingly, the optical signal from the light source can be focused into the interior of the second and fourth circular structures (220, 320) of the first and second resonators (200, 300).

[0083] Meanwhile, the resonator structure (1000) according to the present specification may be formed on different substrates, and may be configured such that the different substrates are laminated on the substrate (100) on which the NV diamond structure (10) is arranged. In this regard, the resonator structure (1000) may include a first resonator structure in which a first resonator (200) is formed and a second resonator structure in which a second resonator (300) is formed. The first resonator (200), the first substrate (100b), and the first ground (100g) may form the first resonator structure. The second resonator (300), the third substrate (100c), and the second ground (200g) may form the second resonator structure. In a laminated structure of a first substrate (100b), a substrate (100), and a second substrate (100c), a plurality of holes (100h1 to 100h4) may be provided to align the multilayer substrates. Screws may be fastened through the plurality of holes (100h1 to 100h4) formed in the first substrate (100b), the substrate (100), and the second substrate (100c), thereby enabling alignment and fastening between the multilayer substrates.

[0084] The first substrate (100b) may be arranged so as to be stacked upward in the Z-axis direction of the substrate (100) so that the first resonator (200) faces the NV diamond structure (10). In this regard, the first resonator (200) may be formed on the second surface of the first substrate (100b), and the first ground (100g) may be formed on the first surface of the first substrate (100b). The second substrate (100c) may be arranged so as to be stacked downward in the Z-axis direction of the substrate (100) so that the second resonator (300) faces the NV diamond structure (10). In this regard, the second resonator (300) may be formed on the first surface of the second substrate (100c), and the second ground (200g) may be formed on the second surface of the second substrate (100c).

[0085] Meanwhile, in the resonator structure (1000) according to the present specification, the feed lines of different layers can be connected by a via structure. Accordingly, the feed lines connected to the external connector can be exposed to the upper / lower portions of the multilayer substrate and connected to the external connector. In this regard, the resonator structure (1000) can be configured to further include a third feed line (220f), a first via (V1), a fourth feed line (320f), and a second via (V2).

[0086] The third power supply line (220f) may be formed with a first width (W1a) on the first surface of the first substrate (100b) on which the first ground (100g) is arranged. The first via (V1) may be formed to vertically connect the first power supply line (210f) on the second surface of the first substrate (100b) and the third power supply line (310f) on the first surface of the first substrate (100a). The fourth power supply line (320f) may be formed with a first width (W1a) on the second surface of the second substrate (100b) on which the second ground (200g) is arranged. The second via (V2) can be formed to vertically connect the second power supply line (210f) on the first surface of the second substrate (100b) and the fourth power supply line (320f) on the second surface of the second substrate (100b).

[0087] A fifth slot region (SR5) having a rectangular shape may be formed in an area where a third feed line (220f) is formed, from which the first ground (100g) is removed. The first ground (100g) having the fifth slot region (SR5) may be formed to surround the third feed line (220f). The boundary of the first ground (100g) may be arranged to be spaced apart from the boundary of the third feed line (220f). A sixth slot region (SR6) having a rectangular shape may be formed in an area where a fourth feed line (320f) is formed, from which the second ground (200g) is removed. The second ground (200g) having the sixth slot region (SR6) may be formed to surround the fourth feed line (320f). The boundary of the second ground (200g) may be arranged to be spaced apart from the boundary of the fourth feed line (320f).

[0088] In addition, the resonator structure (1000) according to the present specification may be formed as a shielding structure in which multiple grounds are formed to prevent electromagnetic fields from being exposed to the outside. In this regard, the resonator structure (1000) may be configured to further include a first ground (100g) and a second ground (200g). The first ground (100g) and the second ground (200g) may form a first shielding layer and a second shielding layer, respectively.

[0089] Meanwhile, the second surface of the first substrate (100) may be arranged to be in contact with the first resonator (200). The first surface of the second substrate (200) may be arranged to be in contact with the second resonator (300). The first ground (100g) may be arranged to be laminated on the first surface of the second substrate (100c). The second ground (200g) may be arranged to be laminated on the second surface of the second substrate (100c).

[0090] Meanwhile, the resonator structure of the quantum sensor system according to the present specification is formed symmetrically in the X-axis and Y-axis directions. The first thickness (t1) of the first substrate (100b) and the second thickness (t2) of the second substrate (100c) may be formed to be the same. The first permittivity of the first substrate (100b) and the second permittivity of the second substrate (100c) may be formed to be the same. Therefore, the resonator structure (1000) may be formed to have a symmetrical magnetic field distribution on the Z-axis in the internal region of the first and second resonators (200, 300). In addition, the first and second resonators (200, 300) are formed to have a symmetrical structure on the XY plane. Therefore, the resonator structure (1000) may be formed to have a symmetrical magnetic field distribution on the X-axis and Y-axis in the internal region of the first and second resonators (200, 300). Accordingly, the quantum sensor system according to the present specification forms a uniform magnetic field within the resonator. Therefore, as the magnetic field within the resonator is formed uniformly, the quantum sensor system can improve sensor sensitivity.

[0091] Meanwhile, the magnetic field distribution in the region on the Z-axis of the first substrate (100b) on which the first resonator (200) is arranged needs to be formed higher than the magnetic field distribution of the substrate (100) on which the NV diamond structure (10) is arranged. In addition, the magnetic field distribution in the region on the Z-axis of the second substrate (100c) on which the second resonator (300) is arranged needs to be formed higher than the magnetic field distribution of the substrate (100) on which the NV diamond structure (10) is arranged. To this end, the permittivity of the substrate (100) may be formed lower than the first and second permittivities of the first and second substrates (100b, 100c).

[0092] Specifically, the permittivity of the substrate (100) between the first resonator (200) and the second resonator (300) may be formed to be smaller than the first permittivity of the first substrate (100b). The permittivity of the substrate (100) between the first resonator (200) and the second resonator (300) may be formed to be larger than the second permittivity of the second substrate (100b). The first permittivity of the first substrate (100b) and the second permittivity of the second substrate (100b) may be formed to be the same.

[0093] In addition, the thickness (t) of the substrate (100) between the first resonator (200) and the second resonator (300) may be formed to be smaller than the first thickness (t1) of the first substrate (100b). The thickness (t) of the substrate (100) between the first resonator (200) and the second resonator (300) may be formed to be smaller than the second thickness (t2) of the second substrate (100c). The first thickness (t1) of the first substrate (100b) and the second thickness (t2) of the second substrate (100c) may be formed to be the same.

[0094] In this regard, Fig. 7 shows a cross-sectional view of a resonator structure in which resonators are arranged on the same plane. Fig. 8 shows the magnetic field distribution inside a resonator structure including the resonator of Fig. 7.

[0095] Referring to FIGS. 7 and 8, the resonator (200b) includes a first circular structure (210b) and a second circular structure (220b) formed to surround the first circular structure (210b). The first circular structure (210b) includes a first slot region (SR1) formed as a first dielectric region at a lower portion. The second circular structure (220b) includes a second slot region (SR2) formed as a second dielectric region at an upper portion. The first slot region (SR1) and the second slot region (SR2) are formed in a symmetrical structure. The magnetic field has the highest value along the inner boundary of the first circular structure (210b) where the slot region (SR1) is not formed. Additionally, the magnetic field has the lowest value in the inner center region of the first circular structure (210b).

[0096] Fig. 9 illustrates the magnetic field distribution on the side of a resonator structure including the resonator of Fig. 7. Referring to Figs. 7 and 9, the magnetic field has the highest value along the inner boundary of the first circular structure (210b). Additionally, the magnetic field has the lowest value in the inner central region of the first circular structure (210b).

[0097] In this regard, in order to improve the sensor sensitivity of a quantum sensor system, it is necessary to form a uniform magnetic field within the NV diamond structure (10) using a resonator. Meanwhile, the quantum sensor system of FIGS. 7 to 9 forms an asymmetrical magnetic field with respect to the NV diamond structure (10) using a single layer resonator on the same plane.

[0098] Therefore, in a quantum sensor system using a single-layer resonator (antenna) on the same plane, an asymmetrical magnetic field may be formed with respect to the NV diamond structure (10), which may negatively affect the sensor sensitivity of the quantum sensor system. Accordingly, in order to improve the sensitivity of the quantum sensor system, it is necessary to form a uniform magnetic field within the NV diamond structure (10) using the resonator structure of FIGS. 4 to 6.

[0099] Meanwhile, a magnetic field generated from a resonator can induce eddy currents in a photodiode. In this regard, Fig. 10 illustrates a conceptual diagram of a magnetic field generated from a resonator inducing eddy currents in a photodiode.

[0100] Referring to Fig. 10(a), a unit element (420a) of a photodetector implemented as an on-chip photodiode is shown. The unit element (420a) of the photodetector has a structure in which an N-well (NW) and a P+ layer (PL) are formed on a P-substrate (P-sub). An anode connection part (ACP) may be formed in an internal region of a cathode connection part (CCP) on the front surface of the unit element (420a) of the photodetector. If a uniform signal distribution is not formed within the resonator structure as shown in Figs. 8 and 9, an eddy current (EC) that rotates along the inner side of the anode connection part (ACP) of the unit element of the photodetector is formed.

[0101] Referring to FIG. 10(a) and FIG. 10(b), the photo detector (420) may be configured to include a plurality of unit elements (420a). The photo detector (420) may be formed in a 2x2 array structure having four unit elements (420a). Each unit element (420a) of the photo detector (420) may be mutually isolated by a shallow-trench isolation (STI) structure. Each unit element (420a) of the photo detector (420) may have a cathode connection portion (CCP) and an anode connection portion (ACP). Each eddy current (EC) that rotates along the inside of the anode connection portion (ACP) of each unit element (420a) of the photo detector (420) may be formed in a closed loop structure.

[0102] Referring to FIGS. 8 and 10, the magnetic field generated from the first and second resonators (210b, 220b) may reach the photodetector (420) and generate eddy current (EC), which is noise. An on-chip photodiode may be used as the photodetector (420). To prevent eddy current, the size of the photodiode may be reduced and the number of photodiodes may be increased, but this requires a separate photodiode manufacturing process. Therefore, in order to reduce eddy current without increasing the number of photodiodes, the resonator structure (1000) needs to be formed as a shielding structure.

[0103] Meanwhile, Figs. 11 to 13 show the magnetic fields of the resonator structures of Figs. 4 to 6. Fig. 11 shows the magnetic fields of the resonator structure of Fig. 6 on the XY plane. Fig. 12 shows the magnetic fields of the resonator structure of Fig. 6 on the YZ plane. Fig. 13 shows the magnetic fields of the resonator structure of Fig. 6 on the XZ plane.

[0104] Referring to FIG. 6, the first slot region (SR1) of the first circular structure (210) may be formed to be vertically symmetrical with respect to the third slot region (SR3) of the third circular structure (310) with respect to one axis. In addition, the second slot region (SR2) of the second circular structure (220) may be formed to be vertically symmetrical with respect to the fourth slot region (SR4) of the fourth circular structure (320) with respect to one axis. Referring to FIG. 11, the first slot region (SR1) of the first circular structure (210) may be formed to overlap with the third slot region (SR3) of the third circular structure (310) on the XY coordinates. In addition, the second slot region (SR2) of the second circular structure (220) may be formed to overlap with the fourth slot region (SR4) of the fourth circular structure (320) on the XY coordinates. Referring to FIGS. 6 and 11, the magnetic field inside the first circular structure (210) of the first resonator (200) exhibits a uniform distribution on the plane formed by the X-axis and the Y-axis compared to the magnetic field inside the first circular structure (210b) of the resonator (200b) of FIG. 8. In addition, the magnetic field inside the third circular structure (310) of the second resonator (300) exhibits a uniform distribution on the plane formed by the X-axis and the Y-axis compared to the magnetic field inside the first circular structure (210b) of the resonator (200b) of FIG. 8.

[0105] Referring to FIGS. 6, 11, and 12, the magnetic field inside the first circular structure (210) of the first resonator (200) exhibits a uniform distribution on the second plane formed by the Y-axis and the Z-axis compared to the magnetic field inside the first circular structure (210b) of the resonator (200b) of FIG. 9. Referring to FIGS. 6, 11, and 12, the magnetic field inside the first circular structure (210) of the first resonator (200) exhibits a uniform distribution in three-dimensional space compared to the magnetic field inside the first circular structure (210b) of the resonator (200b) implemented on a single plane of FIGS. 8 and 9.

[0106] Referring to FIGS. 5, 6, and 13, the magnetic field inside the first and second resonators (200, 300) forms a magnetic field higher than the first threshold. The magnetic field outside the first and second resonators (200, 300) has a low value lower than the second threshold. The magnetic field outside the first and second resonators (200, 300), above the first resonator (200), and below the second resonator (300) forms a magnetic field lower than the second threshold. In this regard, the magnetic field may be shielded to the outside of the resonator structure (1000) by the shielding structure of the first and second grounds (100g, 200g), and the magnetic field may be concentrated to the inside of the resonator structure (1000).

[0107] Referring to FIGS. 5, 6, 11 to 13, the first and second resonators (200, 300) implemented in a symmetrical structure on different planes form a uniform magnetic field inside and shield the magnetic field to the outside of the first and second grounds (100g, 200g). Therefore, the first and second resonators (200, 300) implemented in a symmetrical structure on different planes form a uniform magnetic field in the internal region of the first and third circular structures (210, 230). Accordingly, the sensor sensitivity of a quantum sensor system including the first and second resonators (200, 300) implemented in a symmetrical structure on different planes can be improved.

[0108] Meanwhile, the resonator structure (1000) according to the present specification may be provided with a coupling / fastening structure so as to be coupled with other structures. For example, the quantum sensor system (2000) according to the present specification may be configured to include a resonator and an RF generator in addition to a light source and a photodetector.

[0109] Fig. 14 illustrates a structure in which the first and second feed lines of the resonator structure are connected via first and second connectors. Fig. 15 illustrates a configuration of a quantum system including a plurality of components according to the first embodiment. Fig. 16 illustrates a configuration of a quantum system including a plurality of components according to the second embodiment.

[0110] Referring to FIGS. 4 to 6 and 14, an RF signal of a first frequency can be input to a resonator structure (1000) through a first connector (10c) connected to a first power supply line (210f) in a quantum sensor system (2000a, 2000). The frequency of the RF signal input through the first connector (10c) can be formed as 2.87 GHz. The frequency of the RF signal input through the first connector (10c) is not limited to 2.87 GHz and can be changed depending on the application. No additional signal is input or output through the second connector (20c), and a 50 ohm termination can be formed at the second connector (20c).

[0111] A first connector (10c) may be arranged on a first side of a first substrate (100b). The first connector (10c) may have an inner conductor connected to a third power supply line (220f), and the third power supply line (220f) may be connected to the first power supply line (210f) through a first via (V1). The first connector (10c) may have an outer conductor connected to at least one of a first ground (100g) and a second ground (200g). The first connector (10c) may have an outer conductor connected to the first ground (100g). The inner conductor and the outer conductor of the first connector (10c) may be electrically separated by a dielectric.

[0112] A second connector (20c) may be arranged on the second side of the second substrate (100c). The second connector (20c) may have an internal conductor connected to a fourth power supply line (320f), and the fourth power supply line (320f) may be connected to the second power supply line (310f) via a second via (V2). The second connector (20c) may have an external conductor connected to at least one of the first ground (100g) and the second ground (200g). The external conductor of the second connector (20c) may be connected to the second ground (200g). The internal conductor and the external conductor of the second connector (20c) may be electrically separated by a dielectric.

[0113] Referring to FIGS. 14 and 15, a quantum sensor system (2000a) may be configured to include an RF generator (20), an NV diamond structure (10), a photodetector (420), a light source (510), filters (310, 320), lenses (331, 332, 333, 334), and a reflective surface (340). The reflective surface (340) may be formed to reflect an optical signal of a first wavelength, such as 532 nm, and to allow an optical signal of a second wavelength, such as 637 nm, to pass therethrough.

[0114] An optical signal received from a photodetector (420) may be amplified through a lock-in amplifier (30). An RF generator (20) may be configured to generate an RF signal of a specific frequency. Based on the signal level amplified through the lock-in amplifier (30), the RF generator (20) may generate an RF signal of a specific signal level of a specific frequency. The RF signal of a specific frequency generated by the RF generator (20) may be transmitted to a resonator structure (1000). The resonator structure (1000) may be configured to radiate an RF signal of a specific frequency band. Accordingly, a resonator structure (1000) that radiates an RF signal of a specific frequency band may also be referred to as an antenna structure (1000).

[0115] A 2.87 GHz RF signal radiated from a resonator structure (1000) can be transmitted to an NV diamond structure (10). A GRIN (Gradient Index) lens (335) can be placed between the NV diamond structure (10) and the reflective surface (340). The GRIN lens (335) is manufactured using a polymer material cross method to implement various refractive indices.

[0116] The structure of the quantum sensor system (2000a) becomes complex and bulky due to the inclusion of filters (310, 320), lenses (331, 332, 333, 334), and a reflective surface (340). The quantum sensor system (2000a) may be configured to irradiate an optical signal of a first wavelength emitted from a light source (510) to a focal point of the NV diamond structure (10). To this end, the quantum sensor system (2000a) needs to be provided with filters (310, 320) and lenses (331, 332, 333, 334) so ​​that the optical signal of the first wavelength is irradiated to the focal point of the NV diamond structure (10).

[0117] Meanwhile, whenever the optical signal of the first wavelength passes through the filter (310) and the lenses (331, 332), an attenuation of optical power of about 20% or more occurs. Whenever the optical signal of the second wavelength passes through the filter (320) and the lenses (333, 334), an attenuation of optical power of about 20% or more occurs. Accordingly, the optical power actually irradiated to the focus of the NV diamond structure (10) may be less than 10% of the power emitted from the light source (510). Therefore, sufficient light must be irradiated to the focus of the NV diamond structure (10) to increase the optical power in order to secure ODMR contrast and sensitivity.

[0118] To this end, the light source (510) needs to be implemented as a laser light source. However, the laser light source requires high power, and the photodiode and lens for laser driving and output power feedback take up a large volume. Therefore, the laser light source has limitations in low-power battery operation and miniaturization. In addition, since the laser is used as a light source, it is not easy to integrate it with an antenna (resonator) to excite the NV diamond structure (10), so the quantum sensor system (2000a) having a reflective surface (340) is implemented in a reflective manner.

[0119] Referring to FIGS. 14 and 16, the quantum sensor system (2000) can minimize light attenuation by arranging the NV diamond structure (10) adjacent to the upper region of the light source (510) at a predetermined interval on the Z-axis. In this regard, the NV diamond structure (10) can be arranged above the light source (510) to irradiate light to the center of the NV diamond structure (10) without light attenuation. Therefore, sufficient light can be irradiated to the NV diamond structure (10) even with a low-power light source such as an LED instead of a laser light source. Therefore, the quantum sensor system (2000) can be driven by a low-power battery, and the quantum sensor system (2000) can also be implemented as a wireless communication module.

[0120] Accordingly, as shown in Fig. 14, most of the filters (310, 320), lenses (331, 332, 333, 334) for focusing, and the reflective surface (340) can be removed, thereby enabling miniaturization of the quantum sensor system (2000). In this regard, an RF antenna such as a resonator can be implemented integrally on the substrate (100) to implement the excited state of the NV diamond structure (10) without a separate reflective surface.

[0121] A quantum sensor system (2000) includes a light source (510), an NV diamond structure (10), a photo detector (420), a filter (320), and a lens (333). An RF generator (20) and a lock-in amplifier (30) may be disposed in a main circuit or a magnetic sensor module of the quantum sensor system (2000). The light source (510), an NV diamond structure (10), a photo detector (420), a filter (320), and a lens (333) may be disposed in a magnetic sensor module of the quantum sensor system (2000).

[0122] Miniaturization of the quantum sensor system (2000) is possible by arranging the light source (510), filter (320), and lens (333) on a straight line connecting the center of the NV diamond structure (10) and the center of the photodetector (420). In addition, when using an LED as the light source (510), the sensitivity of 1uT or higher can be improved to 100nT with the modified structure.

[0123] Referring to FIGS. 4 to 6 and FIGS. 14 to 16, a quantum sensor system (2000a, 2000) according to the present specification will be described. The quantum sensor system (2000a, 2000) may be configured to include an NV diamond structure (10) and a resonator structure (1000). The quantum sensor system (2000a, 2000) may include the NV diamond structure (10). First and second resonators (200, 300) may be arranged on the first and second surfaces of a substrate (100) on which the NV diamond structure (10) is arranged.

[0124] The NV diamond structure (10) can be configured to emit a second optical signal of a second wavelength when a first optical signal of a first wavelength and an RF signal of a specific frequency band are applied. The resonator structure (1000) can be operably coupled to the NV diamond structure (10). The NV diamond structure (10) can be disposed in an inner region of the resonator structure (1000) that radiates the RF signal or can be disposed in an upper region. The resonator structure (1000) can be configured to radiate an RF signal of a specific frequency band to the NV diamond structure (10).

[0125] The first resonator (200) may be disposed on a first surface on the Z-axis of the substrate (100) having the NV diamond structure (10) disposed therein. The first resonator (200) may be formed as a first loop structure to surround the NV diamond structure (10). The second resonator (300) may be disposed on a second surface on the Z-axis of the substrate (100) having the NV diamond structure (10) disposed therein. The second resonator (300) may be formed as a second loop structure to surround the NV diamond structure (10).

[0126] The first loop shape may be, but is not limited to, a circular ring shape of the first circular structure (210), and may be any open-loop structure or closed-loop structure. The open-loop structure is a structure in which one end and the other end of the first circular structure (210) are separated by a first slot region (SR1). The closed-loop structure is a structure in which one end and the other end of the first circular structure (210) are connected without a slot region. The second loop shape may be, but is not limited to, a circular ring shape of the third circular structure (310), and may be any open-loop structure or closed-loop structure. The open-loop structure is a structure in which one end and the other end of the third circular structure (310) are separated by a first slot region (SR1). The closed-loop structure is a structure in which one end and the other end of the third circular structure (310) are connected without a slot region. The first loop structure of the first resonator (200) and the second loop structure of the second resonator (300) can be formed as a symmetrical structure of the same shape on the XY plane.

[0127] The first resonator (200) may be configured to include a first feed line (210f), a first circular structure (210), a second circular structure (220), a first slot region (SR1), and a second slot region (SR2). The first feed line (210f) may be formed with a first length (L1a) and a first width (W1a) so that an RF signal may be transmitted. The first circular structure (210) may be operably coupled to the first feed line (210f). The first circular structure (210) may be connected to the first feed line (210f) or may be disposed at a predetermined distance therefrom. For example, the first circular structure (210) may be disposed at a predetermined distance therefrom. Accordingly, the first circular structure (210) can be configured to resonate and radiate a signal of a center frequency and block unwanted signals of other frequencies.

[0128] The first circular structure (210) may be formed of a metal material having a first inner diameter (r1a) and a second width (W2a). The second circular structure (220) may be arranged to surround the first circular structure (210) and may be formed of a metal material having a second inner diameter (r2a) and a third width (W3a).

[0129] The first slot region (SR1) may be formed by removing metal from a lower region in a uniaxial direction from the center of the first circular structure (210). The first slot region (SR1) may be formed as a first dielectric region having a first slot width in a uniaxial direction. The second slot region (SR2) may be formed by removing metal from an upper region in a uniaxial direction from the center of the second circular structure (220). The second slot region (SR2) may be formed as a second dielectric region having a second slot width in a uniaxial direction.

[0130] The second resonator (300) may be configured to include a second feed line (310f), a third circular structure (310), a fourth circular structure (320), a third slot region (SR3), and a fourth slot region (SR4). The third circular structure (310) may be operably coupled to the second feed line (310f). The third circular structure (310) may be connected to the second feed line (310f) or may be disposed at a predetermined distance from the second feed line (310f). For example, the third circular structure (310) may be disposed at a predetermined distance from the second feed line (310f). Accordingly, the third circular structure (310) may be configured to resonate and radiate a signal of a center frequency and block unwanted signals of other frequencies.

[0131] The third circular structure (310) may be formed of a metal material having a first inner diameter (r1a) and a second width (W2a). Therefore, the third circular structure (310) may be formed to correspond to the first circular structure (210). The fourth circular structure (320) may be arranged to surround the third circular structure (310) and may be formed of a metal material having a second inner diameter (r2a) and a third width (W3a). Therefore, the fourth circular structure (320) may be formed to correspond to the second circular structure (220). The second feed line (310f) may be operably coupled to the third circular structure (310). The second feed line (310f) may be connected to the third circular structure (310) or may be arranged to be spaced apart from it by a predetermined interval. The second feed line (310f) can be formed with a first length (L1a) and a first width (W1a) so that an RF signal can be transmitted.

[0132] The third slot region (SR3) may be formed by removing metal from a lower region in a uniaxial direction from the center of the third circular structure (310). The third slot region (SR3) may be formed as a third dielectric region having a first slot width in a uniaxial direction. Therefore, the third slot region (SR3) may be formed in a symmetrical structure with respect to the first slot region (SR1) in an upper / lower portion. The fourth slot region (SR4) may be formed by removing metal from an upper region in a uniaxial direction from the center of the fourth circular structure (320). The fourth slot region (SR4) may be formed as a fourth dielectric region having a second slot width in a uniaxial direction. Therefore, the fourth slot region (SR4) may be formed in a symmetrical structure with respect to the second slot region (SR2) in an upper / lower portion.

[0133] The structure of the first resonator (200) and the structure of the second resonator (300) may be formed on the same coordinates in the X, Y plane and may be formed in a structure that is stacked on the Z axis. In this regard, the first circular structure (210) and the second circular structure (220) may be arranged on the same coordinates of the first surface and the second surface of the substrate (100). The third circular structure (310) and the fourth circular structure (320) may be arranged on the same coordinates of the first surface and the second surface of the substrate (100). Meanwhile, the NV diamond structure (10) may be arranged in the inner region of the second circular structure (210) and the inner region of the fourth circular structure (310).

[0134] Meanwhile, the first resonator (200) and the second resonator (300) may be formed with slot regions having a symmetrical structure. In this regard, the first slot region (SR1) and the third slot region (SR1) may be arranged in a symmetrical structure by being spaced apart by the same distance from the center of the first and third circular structures (210, 310) on the other axis perpendicular to one axis. The second slot region (SR2) and the fourth slot region (SR4) may be arranged in a symmetrical structure by being spaced apart by the same distance from the center of the second and fourth circular structures (220, 320) on the other axis.

[0135] Meanwhile, the resonator structure (1000) according to the present specification may be configured such that a plurality of substrates are further stacked. In this regard, the resonator structure (1000) may further include a second substrate (100c) and a third substrate (100c). The second substrate (100c) may be stacked upwardly in the Z-axis direction on the first resonator (100). The third substrate (100c) may be stacked downwardly in the Z-axis direction on the second resonator (200).

[0136] In addition, the resonator structure (1000) according to the present specification may be formed as a shielding structure in which multiple grounds are formed to prevent electromagnetic fields from being exposed to the outside. In this regard, the resonator structure (1000) may be configured to further include a first ground (100g) and a second ground (200g). The first ground (100g) and the second ground (200g) may form a first shielding layer and a second shielding layer, respectively.

[0137] Meanwhile, the second surface of the first substrate (100) may be arranged to be in contact with the first resonator (200). The first surface of the second substrate (200) may be arranged to be in contact with the second resonator (300). The first ground (100g) may be arranged to be laminated on the first surface of the second substrate (100c). The second ground (200g) may be arranged to be laminated on the second surface of the second substrate (100c).

[0138] Meanwhile, the quantum sensor system (2000a, 2000) according to the present specification may be configured to include a resonator structure (1000), a light receiving unit (400), and a light source (510). The light receiving unit (400) may be configured to include a lens unit (410) and a photodetector (420) inside. The lens unit (410) may be configured to include a first lens (411) and a second lens (412). The first lens (411) and the second lens (412) may be configured as a convex lens and a flat lens, respectively, but are not limited thereto and may be changed depending on the application.

[0139] The light source (510) may be arranged downward in the Z-axis direction of the second resonator (300) and configured to emit an optical signal of a first wavelength. The light source (510) may be configured to emit an optical signal having a wavelength within a predetermined range based on 532 nm. The photo detector (420) may be arranged upward in the Z-axis direction of the first resonator (200). The photo detector (420) may be arranged on the first substrate (100b) upward in the Z-axis direction of the first resonator (200). The photo detector (420) may be configured to detect a second optical signal of a second wavelength emitted from the NV diamond structure (10). The photo detector (420) may be configured to detect an optical signal having a wavelength within a predetermined range based on 637 nm.

[0140] The quantum sensor system (2000a, 2000) according to the present specification may be configured to further include an RF generator (20) and a lock-in amplifier (30). The RF generator (20) may be configured to amplify a second optical signal of a second wavelength detected from a photodetector (420) and output an output signal to the RF generator (20). Based on the signal level amplified through the lock-in amplifier (30), the RF generator (20) may generate an RF signal of a specific signal level of a specific frequency. The RF generator (20) may be implemented as a VCO (Voltage Controlled Oscillator) that outputs a signal of a variable frequency that changes according to voltage, but is not limited thereto and may be changed according to the application. An RF signal of a specific frequency generated by the RF generator (20) may be transmitted to the resonator structure (1000). The RF signal radiated from the resonator structure (1000) can be transmitted to the NV diamond structure (10).

[0141] In the quantum sensor system (2000a, 2000), an RF signal of a first frequency may be input through a first connector (100c) connected to a first power supply line (210f). In this regard, the resonator structure (1000) may radiate the RF signal of the first frequency input through the first connector (100c), so that the RF signal of the first frequency may be input to the NV diamond structure (10). In addition, an optical signal of a first wavelength may be input to the NV diamond structure (10) from a light source (510). Accordingly, the NV diamond structure (10) may emit a second optical signal of a second wavelength greater than the first wavelength. The NV diamond structure (10) may be configured to emit a second optical signal having a wavelength within a predetermined range based on 637 nm.

[0142] The photo detector (420) may be placed on the first substrate (100) in the upper direction in the Z-axis direction of the first resonator (200). The photo detector (420) may be configured to detect a second optical signal of a second wavelength emitted from the NV diamond structure (10). The photo detector (420) may be configured to detect a second optical signal of a second wavelength emitted from the NV diamond structure (10) and passed through the lens unit (410).

[0143] In summary, by implementing first and second resonators (200, 300) of the same symmetrical structure in the upper and lower directions along the Z-axis of the NV diamond structure (10), a magnetic field of the same intensity can be symmetrically generated. Therefore, compared to a resonator implemented on a single plane, the first and second resonators (200, 300) on different planes can significantly improve the uniformity of the magnetic field within the NV diamond structure (10).

[0144] Meanwhile, a shielding layer of the first and second grounds (100g, 200g) can be formed in the upper and lower directions on the Z-axis of the first and second resonators (200, 300) to block an externally generated magnetic field. Accordingly, eddy current can be prevented and noise in the photodiode can be reduced without a separate, specially manufactured photodiode.

[0145] The above describes a resonator structure and a quantum sensor system comprising it. The technical effects of the resonator structure and the quantum sensor system comprising it are as follows.

[0146] According to the present specification, the sensor sensitivity of a quantum sensor system can be improved by forming a uniform magnetic field inside a resonator.

[0147] According to the present specification, the sensor sensitivity of a quantum sensor system can be improved by forming a symmetrical magnetic field inside a resonator.

[0148] According to the present specification, the sensor sensitivity of a quantum sensor system can be improved by uniformly and symmetrically forming a magnetic field of the same intensity inside a resonator.

[0149] According to the present specification, a shielding layer can be formed in the upper and lower regions of the resonator to reduce eddy current when a magnetic field generated in the resonator reaches a photodetector.

[0150] Further scope of the applicability of this specification will become apparent from the detailed description below. However, since various changes and modifications within the spirit and scope of this specification will be apparent to those skilled in the art, it should be understood that the detailed description and specific examples, such as preferred embodiments, are given by way of example only.

Claims

1. In the resonator structure of the quantum sensor system, A substrate having an NV diamond structure arranged inside; A first resonator formed as a first loop structure surrounding the NV diamond structure and disposed on a first surface on the Z-axis of the substrate; and A second resonator is disposed on a second surface on the Z-axis of the substrate and includes a second loop structure formed surrounding the NV diamond structure, A resonator structure in which the first loop structure of the first resonator and the second loop structure of the second resonator are formed as symmetrical structures of the same shape on the XY plane.

2. In paragraph 1, The above first resonator is, A first feed line formed with a first length and a first width to transmit an RF signal; A first circular structure made of metal, operably connected to the first power supply line, having a first inner diameter and a second width; and A resonator structure comprising a second circular structure made of a metal material, the second circular structure being arranged to surround the first circular structure and having a second inner diameter and a third width.

3. In paragraph 2, The substrate further includes a hole formed with a predetermined radius so that the NV diamond structure is inserted therein, and passes a light signal from a light source disposed at the bottom of the substrate. A resonator structure in which the radius of the hole is formed smaller than the second inner diameter of the second resonator.

4. In paragraph 2, The above first resonator is, A first slot region in which a metal is removed from a lower region in a uniaxial direction from the center of the first circular structure, thereby forming a first dielectric region having a first slot width in the uniaxial direction; and A resonator structure comprising a second slot region in which a metal is removed from an upper region in the uniaxial direction from the center of the second circular structure to form a second dielectric region having a second slot width in the uniaxial direction.

5. In paragraph 4, The above second resonator is, A third circular structure made of metal having the first inner diameter and the second width; A fourth circular structure made of metal, arranged to surround the third circular structure and having the second inner diameter and the third width; and A resonator structure, comprising a second feed line formed with the first length and the first width, operably coupled to the third circular structure and allowing the RF signal to be transmitted.

6. In paragraph 5, The above second resonator is, A third slot region in which metal is removed from the upper region in the uniaxial direction from the center of the third circular structure, thereby forming a third dielectric region with the width of the first slot in the uniaxial direction; and A resonator structure including a fourth slot region in which a metal is removed from a lower region in the uniaxial direction from the center of the fourth circular structure to form a fourth dielectric region having the width of the second slot in the uniaxial direction.

7. In paragraph 6, The first circular structure and the second circular structure are arranged on the same coordinates on the XY plane of the first surface and the second surface of the substrate, The third circular structure and the fourth circular structure are arranged on the same coordinates on the XY plane of the first surface and the second surface of the substrate, A resonator structure wherein the NV diamond structure is arranged in the inner region of the second circular structure and the inner region of the fourth circular structure.

8. In paragraph 6, The first slot area and the third slot area are arranged symmetrically with the same distance apart from the center on the other axis perpendicular to the first axis, A resonator structure in which the third slot region and the fourth slot region are arranged symmetrically with the same distance apart from the center on the other axis.

9. In paragraph 6, A first substrate, wherein the first resonator is formed on the second surface, the first ground is formed on the first surface, and the first substrate is laminated upward in the Z-axis direction of the substrate so that the first resonator faces the NV diamond structure; and A resonator structure further comprising a second substrate, wherein the second resonator is formed on a first surface, a second ground is formed on a second surface, and the second substrate is laminated downward in the Z-axis direction of the substrate so that the second resonator faces the NV diamond structure.

10. In paragraph 9, A third power supply line formed with the first width on the first surface of the first substrate on which the first ground is arranged; A first via vertically connecting the first power supply line and the third power supply line; A fourth power supply line formed with the first width on the second surface of the second substrate on which the second ground is arranged; Further comprising a second via vertically connecting the second power supply line and the fourth power supply line, A fifth slot area having a square shape is formed in the area where the third power supply line is formed, from which the first ground is removed, A resonator structure in which a sixth slot area having a square shape is formed in an area where the fourth power supply line is formed, with the second ground removed.

11. In paragraph 9, The first thickness of the first substrate and the second thickness of the second substrate are formed to be the same, A resonator structure in which the first permittivity of the first substrate and the second permittivity of the second substrate are formed to be the same.

12. In paragraph 11, The dielectric constant of the substrate between the first resonator and the second resonator is formed to be smaller than the first dielectric constant of the first substrate, The dielectric constant of the substrate between the first resonator and the second resonator is formed to be smaller than the second dielectric constant of the second substrate, The thickness of the substrate between the first resonator and the second resonator is formed to be smaller than the first thickness of the first substrate, A resonator structure in which the thickness of the substrate between the first resonator and the second resonator is formed to be smaller than the second thickness of the second substrate.

13. In paragraph 10, A first connector disposed on the first side of the first substrate, the inner conductor being connected to the third power supply line which is connected to the first power supply line through the first via, and the outer conductor being connected to the first ground; and A resonator structure further comprising a second connector disposed on a second side of the second substrate, the inner conductor being connected to the fourth power supply line which is connected to the second power supply line through the second via, and the outer conductor being connected to the second ground.

14. In quantum sensor systems, An NV diamond structure configured to emit a second optical signal of a second wavelength when a first optical signal of a first wavelength and an RF signal of a specific frequency band are applied; and a resonator structure operatively coupled to the NV diamond structure and configured to radiate the RF signal to the NV diamond; A substrate having the NV diamond structure disposed therein and a resonator structure formed thereon, The above resonator structure is, A first resonator formed of a first loop structure surrounding the NV diamond structure and disposed on a first surface on the Z-axis of a substrate having the NV diamond structure disposed therein; and A second resonator is disposed on a second surface on the Z-axis of the substrate and includes a second loop structure formed surrounding the NV diamond structure, A quantum sensor system, wherein the first loop structure of the first resonator and the second loop structure of the second resonator are formed as symmetrical structures of the same shape on the XY plane.

15. In paragraph 14, The above first resonator is, A first feed line formed with a first length and a first width so that the RF signal is transmitted; A first circular structure made of metal, operably connected to the first power supply line, having a first inner diameter and a second width; A second circular structure made of a metal material, disposed inside the first circular structure and having a second inner diameter and a third width; A first slot region in which a metal is removed from a lower region in a uniaxial direction from the center of the first circular structure, thereby forming a first dielectric region having a first slot width in the uniaxial direction; and A quantum sensor system comprising a second slot region in which a metal is removed from an upper region in the uniaxial direction at the center of the second circular structure to form a second dielectric region having a second slot width in the uniaxial direction.

16. In paragraph 15, The above second resonator is, A third circular structure made of metal having the first inner diameter and the second width; A fourth circular structure made of metal, disposed inside the third circular structure and having the second inner diameter and the third width; A second feed line operatively coupled to the third circular structure and formed with the first length and the first width so that the RF signal is transmitted; A third slot region in which metal is removed from the upper region in the uniaxial direction from the center of the third circular structure, thereby forming a third dielectric region with the width of the first slot in the uniaxial direction; and A quantum sensor system comprising a fourth slot region in which a metal is removed from a lower region in the uniaxial direction at the center of the fourth circular structure to form a fourth dielectric region having the width of the second slot in the uniaxial direction.

17. In paragraph 16, The above resonator structure is, A first substrate, wherein the first resonator is formed on a second surface, the first ground is formed on a first surface, and the first substrate is laminated upward in the Z-axis direction of the substrate so that the first resonator faces the NV diamond structure; A second substrate, wherein the second resonator is formed on the first surface, the second ground is formed on the second surface, and the second substrate is laminated downward in the Z-axis direction of the substrate so that the second resonator faces the NV diamond structure; The first ground made of a metal material laminated on the first surface of the first substrate; and A quantum system further comprising a second ground made of a metal material laminated on a second surface of the second substrate.

18. In paragraph 16, A light source arranged in a lower direction in the Z-axis direction of the second resonator and configured to emit an optical signal of a first wavelength; and A quantum sensor system further comprising a photodetector arranged in an upper direction in the Z-axis direction of the first resonator and configured to detect a second optical signal of the second wavelength emitted from the NV diamond structure.

19. In paragraph 18, an RF generator configured to generate the RF signal and apply it to the resonator structure; and Further comprising a lock-in amplifier configured to amplify the second optical signal detected from the photodetector and output an output signal to the RF generator, Based on the signal level amplified through the lock-in amplifier, the RF generator generates an RF signal of a specific signal level at a specific frequency, The RF signal of the specific frequency generated by the RF generator is transmitted to the resonator structure, A quantum sensor system, wherein the RF signal radiated from the resonator structure is transmitted to the NV diamond structure.

20. In paragraph 18, An RF signal of a first frequency is input through a first connector connected to the first power supply line, A quantum sensor system, wherein when an RF signal of the first frequency is input to the NV diamond structure and an optical signal of the first wavelength is input to the NV diamond structure from the light source, the NV diamond structure emits a second optical signal of a second wavelength greater than the first wavelength.

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