Organic compound and light-emitting device

Abstract

Provided are a novel organic compound and light-emitting device. Specifically provided is an organic compound represented by general formula (G1). In general formula (G1): X1, X2, and X3 each independently represent one of carbon, nitrogen, oxygen, silicon, and sulfur; at least one of X1, X2, and X3 is carbon or silicon; if representing nitrogen or silicon, X1, X2, and X3 may have a substituent group; said substituent group is one of hydrogen (including deuterium), an alkyl group, an alkoxy group, a silyl group, an aryl group, a heteroaryl group, a cyano group, and an aliphatic amine; if X1, X2, or X3 represents carbon or silicon, a spirocycle having said X1, X2, or X3 as a spiro atom may be formed; and R1 to R9 represent one of hydrogen (including deuterium), an alkyl group, an alkoxy group, a silyl group, an aryl group, a heteroaryl group, a cyano group, and an aliphatic amine.

Description

Organic compounds and light-emitting devices

[0001] One embodiment of the present invention relates to an organic compound, a light-emitting device, a light-receiving device, a light-receiving and light-emitting device, a light-emitting device, a light-emitting and receiving device, a display device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, a driving method thereof, or a manufacturing method thereof.

[0002] 2. Description of the Related Art Organic EL devices (organic EL elements) typified by light-emitting devices, light-receiving devices, and light-emitting / receiving devices that utilize electroluminescence (EL) using organic compounds are increasingly being put to practical use.

[0003] For example, the basic structure of a light-emitting device is a single-type light-emitting device, in which an organic compound layer (EL layer) containing a light-emitting material is sandwiched between a pair of electrodes. By applying a voltage to this device, carriers are injected, and the recombination energy of the carriers is utilized to emit light from the light-emitting material.

[0004] The basic structure of a light-receiving device is a pair of electrodes sandwiching an organic compound layer (active layer) containing a photoelectric conversion material. This device absorbs light energy and generates carriers, which can then obtain electrons from the photoelectric conversion material.

[0005] For example, a functional panel is known in which pixels provided in a display area include a light-emitting element (light-emitting device) and a photoelectric conversion element (light-receiving device) (Patent Document 1).

[0006] Thus, displays or lighting devices using organic EL devices are suitable for use in a variety of electronic devices, but research and development is ongoing to develop organic EL devices with better efficiency and lifespan.

[0007] Although the properties of organic EL devices have improved dramatically, they are still insufficient to meet high demands for all properties, including efficiency and durability.

[0008] Degradation is largely dependent on the luminescent center substance and the materials around it, so there has been active development of organic compound materials, including organometallic complexes, that have good properties.

[0009] WO2020 / 152556

[0010] An object of one embodiment of the present invention is to provide a novel organic compound. ｇ It is an object of one embodiment of the present invention to provide a novel organic compound that has high photoluminescence (PEL) and photoluminescence (PEL) characteristics. Another object of one embodiment of the present invention is to provide an organic compound that can be used as a light-emitting material. Another object of one embodiment of the present invention is to provide a novel organic compound that can be used in a light-emitting device. Another object of one embodiment of the present invention is to provide a novel organic compound that can be used in an intermediate layer of a tandem light-emitting device.

[0011] The glass transition temperature (T ｇ ) is low, the organic compound layer may crystallize in a heating step for removing water adsorbed in the organic compound layer after the step of exposing the organic compound layer to water or a chemical solution containing water as a solvent, resulting in a deterioration in film quality.

[0012] An object of one embodiment of the present invention is to provide a method for synthesizing a novel organic compound.

[0013] Another object of one embodiment of the present invention is to provide a novel light-emitting device.

[0014] One embodiment of the present invention is an organic compound represented by General Formula (G1).

[0015]

[0016] In the general formula (G1), X １ , X ２ , and X ３ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur, and at least one is carbon or silicon. １ , X ２ , and X ３ When any of X is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and each of X independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. １ , X ２ , and X ３ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R ９ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0017] Another embodiment of the present invention is an organic compound represented by General Formula (G2).

[0018]

[0019] In the general formula (G2), X １ and X ２ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur; X １ and X ２When any of X is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and each of X independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. １ and X ２ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R １７ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0020] Another embodiment of the present invention is an organic compound represented by General Formula (G3).

[0021]

[0022] In the general formula (G3), X ４ represents carbon or silicon, and X ４ has hydrogen (including deuterium) or a substituent, and each independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. ４ may form a spiro ring with R as the spiro atom. １ ~R １９represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0023]

[0024] In the above general formula (G4), R １ ~R ２７ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0025] Another embodiment of the present invention is an organic compound represented by structural formula (100).

[0026]

[0027] Another embodiment of the present invention is an organic compound represented by structural formula (101).

[0028]

[0029] Furthermore, a light-emitting device having an organic compound represented by general formula (G1) is also one aspect of the present invention. The light-emitting device has a first electrode, a second electrode, a first organic compound layer, an intermediate layer, and a second organic compound layer, in which the first electrode is positioned to face the second electrode with the intermediate layer interposed therebetween, the first organic compound layer is positioned between the first electrode and the intermediate layer, and the second organic compound layer is positioned between the intermediate layer and the second electrode, and the intermediate layer has an organic compound represented by the following general formula (G1):

[0030]

[0031] In the general formula (G1), X １ , X ２ , and X ３each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur, and at least one is carbon or silicon. １ , X ２ , and X ３ When any of X is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and the substituent each independently has any one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. １ , X ２ , and X ３ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R ９ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0032] In the above, the first organic compound layer and the second organic compound layer are light-emitting devices each having a light-emitting layer.

[0033] Another embodiment of the present invention is a light-emitting device including the light-emitting device, the transistor, or the substrate having any of the above structures.

[0034] In this specification and the like, the term "aromatic ring" refers to not only a monocyclic aromatic ring but also a polycyclic aromatic ring formed by condensing a plurality of monocyclic aromatic rings. The term "heteroaromatic ring" refers to not only a monocyclic heteroaromatic ring but also a polycyclic heteroaromatic ring formed by condensing a plurality of monocyclic heteroaromatic rings, and a polycyclic heteroaromatic ring formed by condensing one or more monocyclic aromatic rings with one or more monocyclic heteroaromatic rings.

[0035] According to one embodiment of the present invention, a novel organic compound having excellent convenience, usefulness, or reliability can be provided. ｇ ) can be provided. Another embodiment of the present invention can provide a light-emitting device with high design freedom in a manufacturing process. Another embodiment of the present invention can provide a highly reliable light-emitting device. Another embodiment of the present invention can provide a light-emitting device, a light-emitting device, an electronic device, a display device, and an electronic device with low power consumption. Another embodiment of the present invention can provide a light-emitting device, a light-emitting device, an electronic device, a display device, an electronic device, and a lighting device with low power consumption and high reliability.

[0036] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc.

[0037] FIGS. 1A, 1B, and 1C are diagrams illustrating a light-emitting device. FIGS. 2A and 2B are top and cross-sectional views of a light-emitting device. FIGS. 3A, 3B, 3C, and 3D are diagrams illustrating a light-emitting device. FIGS. 4A, 4B, 4C, 4D, and 4E are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 5A, 5B, 5C, 5D, and 5E are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 6A, 6B, and 6C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 7A, 7B, and 7C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 8A, 8B, and 8C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 9A, 9B, and 9C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 10A, 10B, and 10C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 11A, 11B, 11C, 11D, 11E, 11F, and 11G are top views showing configuration examples of pixels. FIGS. 12A, 12B, 12C, 12D, 12E, 12F, 12G, 12H, and 12I are top views showing configuration examples of pixels. FIGS. 13A and 13B are perspective views showing configuration examples of display modules. FIGS. 14A and 14B are cross-sectional views showing configuration examples of light-emitting devices. FIG. 15 is a perspective view showing configuration examples of light-emitting devices. FIG. 16A is a cross-sectional view showing configuration examples of light-emitting devices. FIGS. 16B and 16C are cross-sectional views showing configuration examples of transistors. FIG. 17 is a cross-sectional view showing configuration examples of light-emitting devices. FIGS. 18A, 18B, 18C, and 18D are cross-sectional views showing configuration examples of light-emitting devices. FIGS. 19A, 19B, 19C, and 19D are diagrams showing examples of electronic devices. 20A, 20B, 20C, 20D, 20E, and 20F are diagrams showing an example of an electronic device. 21A, 21B, 21C, 21D, 21E, 21F, and 21G are diagrams showing an example of an electronic device. 22A and 22B are diagrams showing the organic compound prepared in Example 1. １ 23 shows the 1 H NMR spectrum of the organic compound prepared in Example 1. １1H NMR spectrum. FIG. 24 is a diagram illustrating the wavelength dependence of absorption intensity and wavelength dependence of emission intensity in a thin film of the organic compound prepared in Example 1. FIG. 25 is a diagram illustrating the configuration of the light-emitting device 1 according to Example 1. FIG. 26 is a diagram illustrating the luminance-current density characteristics of the light-emitting device 1 according to Example 1. FIG. 27 is a diagram illustrating the luminance-voltage characteristics of the light-emitting device 1 according to Example 1. FIG. 28 is a diagram illustrating the current efficiency-current density characteristics of the light-emitting device 1 according to Example 1. FIG. 29 is a diagram illustrating the current density-voltage characteristics of the light-emitting device 1 according to Example 1. FIG. 30 is a diagram illustrating the power efficiency-current density characteristics of the light-emitting device 1 according to Example 1. FIG. 31 is a diagram illustrating the external quantum efficiency-current density characteristics of the light-emitting device 1 according to Example 1. FIG. 32 is a diagram illustrating the emission spectrum of the light-emitting device 1 according to Example 1. FIGS. 33A and 33B are diagrams illustrating the emission spectrum of the light-emitting device 1 according to Example 1. １ 34 shows the 1 H NMR spectrum of the organic compound prepared in Example 2. １ 1 H NMR spectrum.

[0038] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications can be made to the embodiments and details. Furthermore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0039] In this specification, the words "first" and "second" are used for the convenience of understanding the technical content or to identify each component. Therefore, the words "first" and "second" do not limit the number of each component. Furthermore, the words "first" and "second" do not limit the order of each component. Furthermore, the words "first" and "second" or identifying symbols used in this specification may not match the words or identifying symbols in the claims.

[0040] In this specification, the term "deuterated organic compound" refers to an organic compound in which, when focusing on hydrogen (including deuterium) present at a specific position in the organic compound, the proportion of the hydrogen (including deuterium) that is deuterium is greater than the natural abundance of deuterium. This proportion is preferably sufficiently greater than the natural abundance. In this case, "sufficiently" refers to, for example, 7.5% or more being deuterated. The deuteration of an organic compound can be confirmed by methods such as NMR and mass spectrometry. In this specification, hydrogen includes protons and deuterium. Deuterium refers to a stable isotope of hydrogen with a mass number of 2. Protons refer to a stable isotope of hydrogen with a mass number of 1.

[0041] Embodiment 1 In this embodiment, an organic compound which is one embodiment of the present invention will be described.

[0042] <<Example 1-1 of Organic Compound>> One embodiment of the present invention is an organic compound represented by General Formula (G1).

[0043]

[0044] However, in general formula (G1), X １ , X ２ , and X ３ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur, and at least one is carbon or silicon. １ , X ２ , and X ３ When any of X is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and each of X independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. １ , X ２ , and X ３ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R ９represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0045] In general formula (G1), X １ , X ２ , and X ３ The presence of X can suppress the spread of the conjugated system from the pyridine ring. This can increase the energy gap between HOMO and LUMO. In the material used for the intermediate layer, if there is absorption in the visible light region, it may cause a decrease in the efficiency of the device, which is undesirable. However, in the organic compound represented by the above general formula (G1), three pyridine rings are １ , X ２ , and X ３ Since the bond is via the π-conjugated system, absorption in the visible light region can be suppressed.

[0046] In addition, the organic compound represented by the general formula (G1) has three pyridine rings each having a structure represented by X １ , X ２ , and X ３ The pyridine ring is bonded via a bond line, and thus the three nitrogen atoms of the pyridine ring are aggregated within the ring to form a ring structure. The three nitrogen atoms of the pyridine ring are located close to each other, and the lone electron pairs of adjacent nitrogen atoms overlap, thereby increasing the electron density of the nitrogen atoms due to the cooperative effect of the three lone electron pairs. For this reason, when the organic compound represented by general formula (G1) is mixed with a metal or metal compound, it can form a strong coordinate bond by being chelated to the three nitrogen atoms of the pyridine ring.

[0047] The organic compound represented by the general formula (G1) exhibits strong basicity due to high electron density. ＋When chelated, the compound is highly stabilized and has the property of not releasing a proton once it has been captured, making it potentially useful as a strong organic base. For example, in organic synthesis, when a trace amount of acid in the system inhibits an organic reaction, the addition of an organic compound represented by general formula (G1) may be useful in increasing the reaction efficiency. Furthermore, the organic compound represented by general formula (G1) may also be useful for abstracting protons from highly acidic substrates.

[0048] Furthermore, when the organic compound represented by the general formula (G1) is mixed with a metal or metal compound, a coordinate bond is formed by electron donation from the nitrogen of the pyridine ring to the metal, thereby increasing the electron density of the metal or metal compound. Metals or metal compounds with increased charge density have improved electron donor function and are therefore suitable for use in N-type layers in intermediate layers of tandem light-emitting devices. Thus, the organic compound represented by the general formula (G1) is suitable as a material for forming N-type layers in intermediate layers of tandem light-emitting devices.

[0049] <<Example 1-2 of Organic Compound>> One embodiment of the present invention is an organic compound represented by General Formula (G2).

[0050]

[0051] However, in general formula (G2), X １ and X ２ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur; X １ and X ２ When X is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and each of the substituents independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. １ and X ２ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R１７ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0052] In general formula (G2), by introducing a fluorene ring as a spiro ring, the pyridine ring bonded to the fluorene ring and the fluorene ring are unlikely to be on the same plane, thereby reducing the planarity of the entire organic compound and reducing the crystallization property of the layer containing the organic compound. Therefore, the glass transition point of the organic compound can be increased, thereby preventing film quality abnormalities from occurring in the layer containing the organic compound during a heating process. Furthermore, since the twist between adjacent rings is large, the interaction between the fluorene ring and the pyridine ring bonded to the fluorene ring, as well as the intermolecular interaction, can be suppressed, thereby lowering the sublimation temperature.

[0053] <<Example 1-3 of Organic Compound>> One embodiment of the present invention is an organic compound represented by General Formula (G3).

[0054]

[0055] However, in general formula (G3), X ４ represents carbon or silicon, and X ４ has hydrogen (including deuterium) or a substituent, and each independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. ４ may form a spiro ring with R as the spiro atom. １ ~R １９represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0056] In general formula (G3), when the compound has a pyridinediamine structure, the organic compound can be synthesized by a coupling reaction such as an Ullmann reaction or a Buchwald-Hartwig reaction, and therefore the organic compound can be easily synthesized.

[0057] <<Example 1-4 of Organic Compound>> One embodiment of the present invention is an organic compound represented by General Formula (G4).

[0058]

[0059] However, in general formula (G4), R １ ~R ２７ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0060] In addition, in the general formulae (G1) to (G4), X １ , X ２ , X ３ , and X ４ , or R ｍ Specific examples of the substituent represented by the formula (m is any natural number) are shown below.

[0061] Examples of the alkyl group having 1 to 10 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, a hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a neohexyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, a 2,3-dimethylbutyl group, an octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, a nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, a decanyl group, an isodecanyl group, a sec-decanyl group, and a tert-decanyl group.

[0062] Examples of the alkoxy group having 1 to 10 carbon atoms include a methoxy group, an ethoxy group, a propoxy group, a t-butoxy group, a pentyloxy group, an octyloxy group, an allyloxy group, a cyclohexyloxy group, a phenoxy group, and a benzyloxy group.

[0063] Examples of the silyl group having 1 to 20 carbon atoms include a trimethylsilyl group, a triethylsilyl group, a dimethylpropylsilyl group, a tert-butyldimethylsilyl group, a triisoprolylsilyl group, a dimethyloctadecylsilyl group, a tert-butyldiphenylsilyl group, a benzyldimethylsilyl group, and a triphenylsilyl group.

[0064] Examples of the aryl group having 6 to 30 carbon atoms include a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, an anthryl group, a fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a diphenylfluorenyl group, a spirobifluorenyl group, a pyrenyl group, a phenanthryl group, a triphenylenyl group, a perylenyl group, a tetracenyl group, and a chrysenyl group.

[0065] Examples of the heteroaryl group having 3 to 30 carbon atoms include a pyridine ring, a pyrazine ring, a pyrimidine ring, a pyridazine ring, a triazine ring, a quinoline ring, a quinazoline ring, an isoquinoline ring, a pyrrole ring, a naphthyridine ring, a phenanthridine ring, a phenanthroline ring, a quinoxaline ring, an imidazole ring, a benzimidazole ring, an oxazole ring, an isoxazole ring, a thiazole ring, an isothiazole ring, a group having a benzofuran ring, a group having a xanthene ring, a group having a thioxanthene ring, a group having a dihydroacridine ring, a group having an acridine ring, and a group having a spiro[5H-cyclopenta[2,1-b:3,4-b']dipyridine-5,9'-[9H]fluorene] ring.

[0066] Note that in the general formulae (G1) to (G4), hydrogen may be replaced with deuterium as appropriate.

[0067] In addition, in the general formulae (G1) to (G3), the X １ , X ２ , X ３ and X ４ As the spiro ring having any one of the above as a spiro atom, for example, groups represented by the following structural formulae (Sp-1) to (Sp-24) are preferred: In the following structural formulae, the symbol indicated by an asterisk (*) represents the spiro atom.

[0068]

[0069]

[0070] <Specific Examples> Next, specific examples of organic compounds which are embodiments of the present invention and have a structure represented by any of General Formulas (G1) to (G4) are shown below.

[0071]

[0072]

[0073]

[0074]

[0075] The organometallic complexes represented by the structural formulas (100) to (134) are examples of the organometallic complexes represented by the general formula (G1); however, the organometallic complexes of one embodiment of the present invention are not limited thereto.

[0076] <Synthesis Method of Organic Compound> Next, a synthesis method of an organic compound represented by the following general formula (G1), which is an example of an organic compound of one embodiment of the present invention, will be described. Note that various reactions can be applied as a synthesis method of the general formula (G1), and the synthesis method is not limited to the following synthesis method.

[0077]

[0078] In general formula (G1), X １ , X ２ , and X ３ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur, and at least one is carbon or silicon. １ , X ２ , and X ３ When any of X is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and the substituent each independently has any one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. １ , X ２ , and X ３ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R ９ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0079] Specifically, the organic compound (G1) of one embodiment of the present invention can be synthesized as shown in the following synthesis scheme (A-1).

[0080]

[0081] In the compound (a1), Z １ represents a group represented by a hydroxy group, a thiol group, a halogen atom, a trifluoromethanesulfonyl group, a substituent having carbon atoms, a substituent having silicon atoms, or an imino group; R １ ~R ３ is the same as in general formula (G1).

[0082] In the compound (a2), Q １ represents a group represented by a hydroxy group, a thiol group, a halogen atom, a trifluoromethanesulfonyl group, a substituent having carbon atoms, a substituent having silicon atoms, or an imino group; R ４ ~R ９ is the same as in general formula (G1).

[0083] In the synthesis scheme (A-1), the derivative (a1) and the derivative (a2) are coupled by the Ullmann reaction to obtain an organic compound represented by the general formula (G1).

[0084] Copper catalysts that can be used in the coupling reaction represented by the above synthesis scheme include copper bromide (CuBr), copper iodide (CuI), copper chloride (CuCl), copper powder, copper oxide, copper sulfate, copper carbonate, and cupric bromide (CuBr ２ ) etc.

[0085] Examples of the ligand for the copper catalyst include a phenanthroline ligand, a cyclohexyldiamine ligand, and an oxalamide ligand.

[0086] Examples of bases that can be used in the coupling reaction represented by the above synthesis scheme include organic bases such as potassium tert-butoxide, and inorganic bases such as potassium carbonate and sodium carbonate.

[0087] Examples of solvents that can be used in the coupling reaction represented by the above synthesis scheme include nitrobenzene, nonane, decane, undecane, dodecane, toluene, xylene, mesitylene, benzene, N,N-dimethylformamide, dimethyl sulfoxide, etc. However, the solvents that can be used are not limited to these.

[0088] Furthermore, the reaction performed in the above synthesis scheme is not limited to the Ullmann reaction, and other reactions such as the Buchwald-Hartwig reaction, the Migita-Kosugi-Still coupling reaction using an organotin compound, a coupling reaction using a Grignard reagent, and a nucleophilic substitution reaction can also be used.

[0089] The organic compound of one embodiment of the present invention can be synthesized as described above; however, the present invention is not limited thereto, and the compound may be synthesized by other synthesis methods.

[0090] This embodiment mode can be used in any combination with other embodiment modes and examples.

[0091] (Embodiment 2) An organic EL element (hereinafter also referred to as a light-emitting device) has an organic compound layer containing a light-emitting substance between electrodes (between a first electrode and a second electrode), and is configured to emit light by energy generated by recombining carriers (holes and electrons) injected from the electrodes into the organic compound layer.

[0092] 1A illustrates a light-emitting device 130 according to one embodiment of the present invention. The light-emitting device according to one embodiment of the present invention is a tandem light-emitting device including an organic compound layer 103 having a first light-emitting unit 501 including a first light-emitting layer 113_1, a second light-emitting unit 502 including a second light-emitting layer 113_2, and an intermediate layer 116 between a first electrode 101 including an anode and a second electrode 102 including a cathode (note that the light-emitting unit is also referred to as an EL layer).

[0093] Although FIG. 1A shows a light-emitting device having one intermediate layer 116 and two light-emitting units, the light-emitting device may have n (n is an integer of 1 or more) charge generation layers (intermediate layers) and n+1 light-emitting units.

[0094] 1B is an example of a tandem light-emitting device (where n is 2) including a first light-emitting unit 501, a first intermediate layer 116_1, a second light-emitting unit 502, a second intermediate layer 116_2, and a third light-emitting unit 503. The intermediate layer 116 includes at least a P-type layer 117 (hereinafter also referred to as a charge generation region) and an N-type layer 119 (hereinafter also referred to as an electron injection buffer region). An electron relay layer 118 (hereinafter also referred to as an electron relay region) may be provided between the N-type layer 119 and the P-type layer 117 to facilitate the transfer of electrons between these two layers.

[0095] The color gamut of the light emitted by the light-emitting layer in each light-emitting unit may be the same or different. The light-emitting layer may have a single layer or a laminated structure. For example, white light can be obtained by configuring the first and third light-emitting units to emit light in the blue region, and the second light-emitting unit to emit light in the red region and the green region from the laminated light-emitting layer.

[0096] Here, by using an organic compound represented by the following general formula (G1) as an electron transport material in at least the N-type layer of the intermediate layer, the intermediate layer can be made into a layer that has good heat resistance and is resistant to crystallization. The glass transition temperature Tg of the organic compound represented by the following general formula (G1) is preferably 100°C or higher, preferably 120°C or higher, more preferably 150°C or higher, and even more preferably 170°C or higher.

[0097] In particular, even if a photolithography process is employed when processing the intermediate layer, the layer can be made to be difficult to crystallize.

[0098] The organic compound according to one embodiment of the present invention is T ｇ Since the organic compound layer has a higher luminance, the organic compound layer can be prevented from crystallizing in a heating step for removing water adsorbed in the organic compound layer after the step of exposing the organic compound layer to water or a chemical solution containing water as a solvent. Therefore, by using the organic compound of one embodiment of the present invention, a light-emitting device with excellent characteristics in which light-emitting defects are suppressed can be manufactured.

[0099] Furthermore, as shown in FIG. 1B , in a light-emitting device having n (n is an integer of 1 or more) intermediate layers and n+1 light-emitting units, at least one of the n intermediate layers has a structure containing an organic compound represented by the following general formula (G1):

[0100]

[0101] In the general formula (G1), X １ , X ２ , and X ３ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur, at least one of which is carbon or silicon; X １ , X ２ , or X ３ When X is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and each of the substituents independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. １ , X ２ , and X ３ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R ９ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms.

[0102] Examples of the alkyl group having 1 to 10 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, a hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a neohexyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, a 2,3-dimethylbutyl group, an octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, a nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, a decanyl group, an isodecanyl group, a sec-decanyl group, and a tert-decanyl group.

[0103] Examples of the alkoxy group having 1 to 10 carbon atoms include a methoxy group, an ethoxy group, a propoxy group, a t-butoxy group, a pentyloxy group, an octyloxy group, an allyloxy group, a cyclohexyloxy group, a phenoxy group, and a benzyloxy group.

[0104] Examples of the silyl group having 1 to 20 carbon atoms include a trimethylsilyl group, a triethylsilyl group, a dimethylpropylsilyl group, a tert-butyldimethylsilyl group, a triisoprolylsilyl group, a dimethyloctadecylsilyl group, a tert-butyldiphenylsilyl group, a benzyldimethylsilyl group, and a triphenylsilyl group.

[0105] Examples of the aryl group having 6 to 30 carbon atoms include a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, an anthryl group, a fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a diphenylfluorenyl group, a spirobifluorenyl group, a pyrenyl group, a phenanthryl group, a triphenylenyl group, a perylenyl group, a tetracenyl group, and a chrysenyl group.

[0106] Examples of the heteroaryl group having 3 to 30 carbon atoms include a pyridine ring, a pyrazine ring, a pyrimidine ring, a pyridazine ring, a triazine ring, a quinoline ring, a quinazoline ring, an isoquinoline ring, a pyrrole ring, a naphthyridine ring, a phenanthridine ring, a phenanthroline ring, a quinoxaline ring, an imidazole ring, a benzimidazole ring, an oxazole ring, an isoxazole ring, a thiazole ring, an isothiazole ring, a group having a benzofuran ring, a group having a xanthene ring, a group having a thioxanthene ring, a group having a dihydroacridine ring, a group having an acridine ring, and a group having a spiro[5H-cyclopenta[2,1-b:3,4-b']dipyridine-5,9'-[9H]fluorene] ring.

[0107] By using the organic compound described above in the N-type intermediate layer or the electron injection layer, it is possible to realize a light-emitting device with good heat resistance.

[0108] Either one or both of the electron injection layer and the N-type intermediate layer may contain, in addition to the organic compound, one or more of a metal, a metal compound, and a metal complex.

[0109] The N-type intermediate layer is an electron injection buffer layer in which an electron donor is added to an electron transport material, and the electron donor may be an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 or Group 13 in the periodic table, or an oxide or carbonate thereof. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li), ２ It is preferable to use indium oxide (InO), indium oxide (InO), cesium carbonate, etc. Also, an organic compound such as tetrathianaphthacene may be used as the electron donor.

[0110] When the electron injection layer of the intermediate layer has a structure in which an electron acceptor is added to a hole transporting material that is an organic compound (p-type layer), the hole transporting material shown in this embodiment can be used as the hole transporting material.４ -TCNQ), chloranil, etc. Also, oxides of metals belonging to Groups 4 to 8 of the periodic table can be used. Specific examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. The acceptor materials described above may also be used. Furthermore, a mixed film obtained by mixing materials constituting the p-type layer may be used, or single films containing each material may be stacked.

[0111] The organic compound represented by the general formula (G1) may be a mixed layer of the organic compound represented by the general formula (G1) and any one or more of a metal, a metal compound, and a metal complex, or may have a stacked structure of a layer containing the organic compound and a layer containing any one or more of a metal, a metal compound, and a metal complex. When the organic compound is used as an electron injection layer, the layer containing any one or more of a metal, a metal compound, and a metal complex is preferably present closest to the second electrode 102.

[0112] <Configuration of Light-Emitting Device> Hereinafter, specific configurations other than those described above of the light-emitting device 130 having the above-described organic compound will be described.

[0113] The organic compound of one embodiment of the present invention can be used for a functional layer of a light-emitting device. For example, the organic compound of one embodiment of the present invention can be suitably used for an electron-transport layer or an n-type intermediate layer.

[0114] The first light-emitting unit 501 and the second light-emitting unit may include other functional layers in addition to the light-emitting layer. In FIG. 1A , the first light-emitting unit 501 includes a hole-injection layer 111, a first hole-transport layer 112_1, and a first electron-transport layer 114_1 in addition to the first light-emitting layer 113_1, and the second light-emitting unit 502 includes a second hole-transport layer 112_2, a second electron-transport layer 114_2, and an electron-injection layer 115 in addition to the second light-emitting layer 113_2. However, the structure of the organic compound layer 103 in the present invention is not limited thereto, and any of the layers may be omitted, or other layers may be provided. Representative examples of such other layers include a carrier blocking layer and an exciton blocking layer.

[0115] Furthermore, since the intermediate layer 116 has the N-type layer 119, the N-type layer 119 serves as an electron injection layer in the light-emitting unit on the anode side, so that an electron injection layer may be provided in the light-emitting unit on the anode side (first light-emitting unit 501 in FIG. 1A ) as needed. Similarly, since the intermediate layer 116 has the P-type layer 117, the P-type layer 117 serves as a hole injection layer in the light-emitting unit on the cathode side, so that a hole injection layer may be provided in the light-emitting unit on the cathode side (second light-emitting unit 502 in FIG. 1A ) as needed.

[0116] [Intermediate Layer] The configuration of the intermediate layer 116 of the light-emitting device 130 will be described below.

[0117] As described above, the N-type layer 119 is a layer containing an organic compound represented by the general formula (G1). The layer may contain any one or more of a metal, a metal compound, and a metal complex.

[0118] The P-type layer 117, which is a charge generation layer, is preferably formed from a composite material containing a material having acceptor properties and an organic compound having hole transport properties. As the organic compound having hole transport properties used in the composite material, various organic compounds can be used, such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.). The organic compound having hole transport properties used in the composite material can be a 1×10 −６ cm ２ / Vs or more. The organic compound having hole transport properties used in the composite material is preferably a compound having a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, or the like is preferred. As the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton in the ring is preferred, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to the above ring is preferred.

[0119] Such organic compounds having hole transport properties preferably have at least one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It is preferable that these organic compounds having hole transport properties are substances having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of light-emitting devices with a long lifetime.

[0120] Specific examples of the organic compound having hole transport properties as described above include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4′-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4″-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP), and N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP). N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-4-amino-p-terphenyl] ]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβ NB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine ]-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)phenyl N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis( N-(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis([biphenyl]-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4 -(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis(9,9 N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-3-amine, N,N-bis(9,9-dimethyl-9H[fluoren]-2-yl)-9,9'-spirobi[9H-fluorene]-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-1-amine, and the like can be mentioned.

[0121] Other aromatic amine compounds that can be used as the material having hole transport properties include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0122] Furthermore, as the substance having acceptor properties contained in the P-type layer 117, an organic compound having an electron-withdrawing group (such as a halogen group or a cyano group) can be used, and examples thereof include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like. In particular, compounds in which an electron-withdrawing group is bonded to a fused aromatic ring having a plurality of heteroatoms, such as HAT-CN, are thermally stable and preferred. Also, [3]radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group, a cyano group, etc.) are preferred because they have very high electron-accepting properties, and specific examples thereof include α,α',α''-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile]. As the substance having acceptor properties, in addition to the organic compounds described above, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used.

[0123] The electron relay layer 118 contains a substance having electron transport properties and has the function of preventing interaction between the N-type layer 119 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is preferably between the LUMO level of the acceptor substance in the P-type layer 117 and the LUMO level of the organic compound contained in the layer in contact with the intermediate layer 116 in the light-emitting unit on the first electrode 101 side (in FIG. 1A , the first electron transport layer 114_1 in the first light-emitting unit 501). The specific energy level of the LUMO level of the substance having electron transport properties used in the electron relay layer 118 is −5.0 eV or higher, preferably −5.0 eV or higher and −3.0 eV or lower. Note that the substance having electron transport properties used in the electron relay layer 118 is preferably a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0124] A tandem light-emitting device having such an intermediate layer 116 can be a light-emitting device with good characteristics, without a significant increase in driving voltage or a significant decrease in light-emitting efficiency, even when the organic compound layer 103 is processed by photolithography.

[0125] [Electrodes] The configurations of the first electrode 101 and the second electrode 102 of the light-emitting device 130 will be described below.

[0126] The first electrode 101 is an electrode including an anode. The first electrode 101 may have a stacked structure, in which case the layer in contact with the organic compound layer 103 functions as the anode. The anode is preferably formed using a metal, alloy, conductive compound, or mixture thereof having a high work function (specifically, 4.0 eV or more). Specific examples include indium oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium oxide-zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are usually formed by sputtering, but may also be formed by applying a sol-gel method or the like. For example, indium oxide-zinc oxide can be formed by sputtering using a target containing indium oxide and 1 wt % to 20 wt % of zinc oxide. Indium oxide containing tungsten oxide and zinc oxide (IWZO) can also be formed by sputtering using a target containing 0.5 wt % to 5 wt % tungsten oxide and 0.1 wt % to 1 wt % zinc oxide relative to the indium oxide. Other materials that can be used for the anode include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), and nitrides of metal materials (e.g., titanium nitride). Alternatively, graphene can be used for the anode. Using the composite material that constitutes the P-type layer 117 in the intermediate layer 116 as a layer in contact with the anode (typically a hole injection layer) allows the electrode material to be selected regardless of the work function.

[0127] [Light-Emitting Unit] The configurations of the first light-emitting unit 501 and the second light-emitting unit 502 of the light-emitting device 130 will be described below.

[0128] The organic compound layer 103 has a stacked structure. FIG. 1A illustrates the stacked structure including a first light-emitting unit 501 including a first light-emitting layer 113_1, an intermediate layer 116, and a second light-emitting unit 502 including a second light-emitting layer 113_2. While the stacked structure shown here includes two light-emitting units sandwiched between intermediate layers, a stacked structure of three or more light-emitting units may also be used. Even in this case, an intermediate layer is provided between the light-emitting units. Each light-emitting unit also has a stacked structure. The light-emitting unit is not limited to the structure shown in FIG. 1A , and may be configured using various functional layers, such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier block layer (hole block layer, electron block layer), and an exciton block layer, as appropriate.

[0129] The hole injection layer 111 is provided in contact with the anode and has a function of facilitating injection of holes into the organic compound layer 103 (first light-emitting unit 501). ２ phthalocyanine compounds or complex compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), or polymers such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviation: PEDOT / PSS).

[0130] The hole injection layer 111 may be formed of a substance having electron acceptor properties. As the substance having acceptor properties, the substances exemplified as acceptor substances used in the composite material forming the P-type layer 117 in the intermediate layer 116 can be used.

[0131] The hole injection layer 111 may be formed using the same composite material as that forming the P-type layer 117 in the intermediate layer 116 .

[0132] In the hole-injection layer 111, the organic compound having hole-transporting properties used in the composite material is more preferably a substance having a relatively low HOMO level, that is, a HOMO level of -5.7 eV or more and -5.4 eV or less. When the organic compound having hole-transporting properties used in the composite material has a relatively low HOMO level, injection of holes into the hole-transport layer becomes easy, and a light-emitting device with a long lifetime can be easily obtained. Furthermore, when the organic compound having hole-transporting properties used in the composite material is a substance having a relatively low HOMO level, induction of holes is appropriately suppressed, and a light-emitting device with a long lifetime can be obtained.

[0133] By forming the hole injection layer 111, the hole injection property becomes good, and a light emitting device with a low driving voltage can be obtained.

[0134] Among substances having acceptor properties, organic compounds having acceptor properties are easy to use because they can be easily vapor-deposited and formed into a film.

[0135] Furthermore, since the P-type layer 117 in the intermediate layer 116 functions as a hole injection layer, the second light-emitting unit 502 does not have a hole injection layer, but the second light-emitting unit may have a hole injection layer.

[0136] The hole-transporting layers (the first hole-transporting layer 112_1 and the second hole-transporting layer 112_2) are formed by containing an organic compound having a hole-transporting property. −６ cm ２ It is preferable that the material has a hole mobility of 1.0 V or more.

[0137] Examples of the material having a hole transporting property include 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N′-diphenyl-N,N′-bis(3-methylphenyl)-4,4′-diaminobiphenyl (abbreviation: TPD), N,N′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3-methylphenyl-4,4′-diaminobiphenyl (abbreviation: 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), 4-phenyl-3-methylphenyl-4,4′-diaminobiphenyl (abbreviation: 4,4′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: 4,4′-bis(9H-fluoren-9-yl)triphenylamine) (abbreviation: BPAFLP), 4-phenyl-3-methyl ...BPAFLP), 4-phenyl-3-methylphenyl-4,4′-diaminobiphenyl (abbr 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), compounds having an aromatic amine skeleton such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di( N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-Bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: Bi sβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"-terf 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylen-2-yl) )-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, or compounds having a carbazole skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the compounds listed above, compounds having an aromatic amine skeleton or a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. Note that the substances listed as the materials having hole transport properties used in the composite material of the hole injection layer 111 can also be suitably used as materials for forming the hole transport layer 112.

[0138] The light-emitting layers (the first light-emitting layer 113_1 and the second light-emitting layer 113_2) preferably contain a light-emitting substance and a host material. The light-emitting layer may also contain other materials. Alternatively, the light-emitting layer may be a stack of two layers having different compositions.

[0139] The luminescent material may be a fluorescent material, a phosphorescent material, a material exhibiting thermally activated delayed fluorescence (TADF), or any other luminescent material.

[0140] Examples of materials that can be used as fluorescent materials in the light-emitting layer include the following: In addition, fluorescent materials other than these can also be used.

[0141] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N,9 -diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA) , 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyra N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), Name: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJ™), N,N'-diphenyl-N,N'-(1,6-pyren-diyl)bis[(6-phenylbenzo[b]naphthyl)benzo[b]naphthyl] ... 6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred because they have high hole trapping properties and excellent luminous efficiency or reliability.

[0142] Also, 5,9-diphenyl-5,9-diaza-13b-boranaphtho[3,2,1-de]anthracene (abbreviation: DABNA1), 9-(biphenyl-3-yl)-N,N,5,11-tetraphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin-3-amine (abbreviation: DABNA2), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-N,N-diphenyl -5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin-7-amine (abbreviation: DPhA-tBu4DABNA), 2,12-di(tert-butyl)-N,N,5,9-tetra(4-tert-butylphenyl)-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-di(tert-butyl)-5,9 -di(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: MetBu4DABNA), N7,N7,N13,N13,5,9,11,15-octaphenyl-5H,9H,11H,15H-[1,4]benzazaborino[2,3,4-kl][1,4]benzazaborino[4',3',2':4,5][1,4]benzazaborino[3,2 Condensed heteroaromatic compounds containing nitrogen and boron, such as [4-tert-butylphenyl]benz[5,6]indolo[3,2,1-jk]benzo[b]carbazole (abbreviation: tBuPBibc), and in particular compounds having a diaza-boranaphtho-anthracene skeleton, can be suitably used because they have a narrow emission spectrum and can emit blue light with good color purity.

[0143] In addition to these, 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazolyl-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-G), 9,11-bis[ Compounds having an indole skeleton such as [3,6-bis(1,1-dimethylethyl)-9H-carbazolyl-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3′,2′,1′:8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-Y) can be preferably used.

[0144] When a phosphorescent material is used as the light-emitting material in the light-emitting layer, examples of materials that can be used include the following.

[0145] Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp) ３ ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz) ３ ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b) ３ organometallic iridium complexes having a 4H-triazole skeleton, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp) ３ ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me) ３organometallic iridium complexes having a 1H-triazole skeleton, such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim) ３ ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me) ３ organometallic iridium complexes having an imidazole skeleton, such as tris(2-{1-[2,6-bis(1-methylethyl)phenyl]-1H-imidazol-2-yl-κN}-4-cyanophenyl-κC)iridium(III) (abbreviation: CNImIr); ２’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C ２’} Iridium(III) picolinate (abbreviation: [Ir(CF ３ ppy) ２ (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ Examples of suitable iridium complexes include organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand, such as ]iridium(III) acetylacetonate (abbreviation: FIracac), and platinum complexes such as (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazol-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-tert-butyl-2-pyridinyl-κN)carbazole-2,1-diyl-κC1)platinum(II) (abbreviation: PtON-TBBI). These compounds exhibit blue phosphorescence and have an emission peak in the wavelength range of 450 nm to 520 nm. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium atoms can also be used.

[0146] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ３ ]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ３ ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ２ (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ２ (acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm) ２ (acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) ２ (acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm) ２ organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me) ２ (acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) ２ organometallic iridium complexes having a pyrazine skeleton, such as tris(2-phenylpyridinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(ppy) ３ ]), bis(2-phenylpyridinato-N,C ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy) ２ (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq) ２(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq) ３ ]), tris(2-phenylquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(pq) ３ ]), bis(2-phenylquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(pq) ２ (acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3) ２ (mbfpypy-d3)), [2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC]bis[5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC]iridium(III) (abbreviation: Ir(5mtpy-d6) ２ (mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) ２ (mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) ２ (mdppy)), tris{2-[5-(methyl-d3)-4-phenyl-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5m4dppy-d ３ ) ３In addition to organometallic iridium complexes having a pyridine skeleton such as (2-{1-(5-tert-butylbiphenyl-2-yl)-4-[3-tert-butyl-5-(4-phenyl-2-pyridinyl-κN)phenyl-κC6]-2-benzimidazolyl-κN3}-4,6-di-tert-butylphenolato-κO)platinum(II) (abbreviation: Pt(tBudppymmtBubiz-tBubp)), [2-(4-(3,5-di-te organometallic platinum complexes such as [Tb(acac)]-4-(4-(4-(5'-tert-butylphenyl)-6-{3-[4-(5'-tert-butyl[1,1':3',1''-terphenyl]-2'-yl)-2-pyridinyl-κN]phenyl-κC2}-2-pyridinyl-κN)phenolato-κO]platinum(II) (abbreviation: Pt(4tButppppypyp-mmtBup)); tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)] ３ Examples of suitable compounds include rare earth metal complexes such as iridium fluoride (Phen). These compounds mainly exhibit green phosphorescence and have an emission peak in the wavelength range of 500 nm to 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they are remarkably excellent in reliability and luminous efficiency. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium atoms can also be used.

[0147] Also, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) ２ (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm) ２ (dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(dpm) ２ organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr) ２(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) ２ (dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) ２ organometallic iridium complexes having a pyrazine skeleton, such as tris(1-phenylisoquinolinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(piq) ３ ]), bis(1-phenylisoquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq) ２ In addition to organometallic iridium complexes having a pyridine skeleton such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: PtOEP), platinum complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) ３ (Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) ３ Examples of suitable compounds include rare earth metal complexes such as iridium fluoride (Phen). These compounds exhibit red phosphorescence and have an emission peak in the wavelength range of 600 nm to 700 nm. Organometallic iridium complexes having a pyrazine skeleton can emit red light with good chromaticity. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium atoms can also be used.

[0148] In addition to the phosphorescent compounds described above, known phosphorescent compounds may be selected and used.

[0149] Examples of TADF materials that can be used include fullerene and its derivatives, acridine and its derivatives, and eosin derivatives. Other examples include metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (SnF) represented by the following structural formula: ２ (Proto IX)), mesoporphyrin-tin fluoride complex (SnF ２ (Meso IX)), hematoporphyrin-tin fluoride complex (SnF ２ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF ２ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF ２ (OEP)), etioporphyrin-tin fluoride complex (SnF ２ (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl ２ OEP) and the like.

[0150]

[0151] Further, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), and Heterocyclic compounds having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, such as 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10′H-spiro[acridine-9,9′-anthracene]-10′-one (abbreviation: ACRSA), can also be used. The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. Among the skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability. Furthermore, among the skeletons having a π-electron-rich heteroaromatic ring, acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable.The furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. The pyrrole skeleton is particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton. A substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferred because the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both enhanced, reducing the energy difference between the S1 level and the T1 level, thereby enabling efficient thermally activated delayed fluorescence. Instead of the π-electron-deficient heteroaromatic ring, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used. The π-electron-rich skeleton may be, for example, an aromatic amine skeleton or a phenazine skeleton. Examples of usable π-electron-deficient skeletons include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0152]

[0153] Alternatively, a TADF material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Such a TADF material has a short emission lifetime (excitation lifetime), which can suppress a decrease in efficiency in the high-brightness region of a light-emitting device. Specific examples include materials with the molecular structure shown below.

[0154]

[0155] The TADF material is a material that has a small difference between the S1 level and the T1 level and has the function of converting triplet excitation energy to singlet excitation energy by reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy (reverse intersystem crossing) with a small amount of thermal energy, and a singlet excited state can be efficiently generated. Furthermore, triplet excitation energy can be converted into luminescence.

[0156] Furthermore, an exciplex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 level and the T1 level, and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0157] The T1 level can be determined by using a phosphorescence spectrum observed at low temperatures (e.g., 77 K to 10 K). When a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side of the TADF material, and the energy of the wavelength of the extrapolated line is defined as the S1 level, and when a tangent line is drawn at the base of the phosphorescence spectrum on the short wavelength side of the TADF material, and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0158] When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0159] As the host material of the light-emitting layer, various carrier transport materials such as a material having an electron transport property and / or a material having a hole transport property, and the above-mentioned TADF material can be used.

[0160] As the material having hole transport properties, organic compounds having an amine skeleton, a π-electron-rich heteroaromatic skeleton, etc. are preferred. For example, 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N′-diphenyl-N,N′-bis(3-methylphenyl)-4,4′-diaminobiphenyl (abbreviation: TPD), N,N′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4- Phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB) aromatic amines such as 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF). compounds having a carbazole skeleton such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP); 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II);Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the compounds listed above, compounds having an aromatic amine skeleton or a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. In addition, the organic compounds listed as examples of materials having hole transport properties in the hole transport layer can also be used.

[0161] Examples of materials having electron transport properties include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ２), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), or other metal complexes; and organic compounds having a π-electron-deficient heteroaromatic ring are preferred. Examples of organic compounds having a π-electron-deficient heteroaromatic ring include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4-bis(5- organic compounds having an azole skeleton such as methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4, organic compounds containing a heteroaromatic ring having a pyridine skeleton, such as 7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2′-(1,3-phenylene)bis[9-phenyl-1,10-phenanthroline] (abbreviation: mPPhen2P), and 2,2′-[biphenyl]-4,4′-diylbis[1,10-phenanthroline] (abbreviation: Phen2BP);h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl 1-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNf pr), 9-[(3'-dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidinyl 4,6-diphenyl-4,6-diylbis(biphenyl-3,3′-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6( 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]pyrimidine organic compounds having a diazine skeleton such as 2-[(biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2-[3-[3-(benzo[b]naphtho[1,2-d] 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b] Carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthryl)phenyl]-4,6- Diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-(4-[biphenyl]-4-yl-6-phenyl-1,3,5-triazin-2-yl)-11,12-dihydro-12-phenyl-indolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3′-(triphenylen-2-yl)-biphenyl-3-yl]-4,6-diphenyl′-1,3,5-triazine (abbreviation: mTpBPTzn) Examples of suitable organic compounds include organic compounds containing heteroaromatic rings with a triazine skeleton, such as 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn) and 2-[biphenyl]-3-yl-4-phenyl-6-(8-[1,1':4',1''-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviation: mBP-TPDBfTzn). Among the above, organic compounds containing heteroaromatic rings with a diazine skeleton, organic compounds containing heteroaromatic rings with a pyridine skeleton, and organic compounds containing heteroaromatic rings with a triazine skeleton are preferred due to their high reliability. In particular, organic compounds containing heteroaromatic rings with a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing heteroaromatic rings with a triazine skeleton have high electron transport properties and contribute to reduced driving voltage.

[0162] The TADF materials that can be used as the host material can be the same as those listed above. When a TADF material is used as a host material, triplet excitation energy generated in the TADF material is converted into singlet excitation energy by reverse intersystem crossing, and the energy is further transferred to a light-emitting substance, thereby improving the luminous efficiency of the light-emitting device. In this case, the TADF material functions as an energy donor, and the light-emitting substance functions as an energy acceptor.

[0163] This is very effective when the luminescent material is a fluorescent luminescent material. Furthermore, in this case, in order to obtain high luminous efficiency, it is preferable that the S1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Furthermore, it is preferable that the T1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than the T1 level of the fluorescent luminescent material.

[0164] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, since this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0165] Furthermore, in order to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. To this end, it is preferable that the fluorescent material has a protecting group around the luminophore (the skeleton responsible for light emission) of the fluorescent material. The protecting group is preferably a substituent without a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 12 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even more preferable that the protecting group has multiple protecting groups. Substituents without a π bond have poor carrier transport function, so the distance between the TADF material and the luminophore of the fluorescent material can be increased without significantly affecting carrier transport or carrier recombination. Here, the luminophore refers to the atomic group (skeleton) responsible for light emission in the fluorescent material. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring. Examples of such luminophores include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. In particular, fluorescent materials having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0166] When a fluorescent light-emitting substance is used as the light-emitting substance, a material having an anthracene skeleton is suitable as the host material. Using a substance having an anthracene skeleton as the host material for a fluorescent light-emitting substance makes it possible to realize an emitting layer with both excellent luminous efficiency and durability. As a substance having an anthracene skeleton used as the host material, a diphenylanthracene skeleton, particularly a substance having a 9,10-diphenylanthracene skeleton, is preferred because it is chemically stable. Furthermore, a host material having a carbazole skeleton is preferred because it enhances hole injection and transport properties. However, a host material containing a benzocarbazole skeleton in which a benzene ring is further condensed to the carbazole skeleton is more preferred because its HOMO is shallower by about 0.1 eV than a host material having a carbazole skeleton, making it easier for holes to enter. In particular, a host material containing a dibenzocarbazole skeleton is preferred because its HOMO is shallower by about 0.1 eV than a host material having a carbazole skeleton, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). Note that, in view of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4' -yl]anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthryl)benzo Examples include zo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-[4-(10-[biphenyl]-4-yl-9-anthryl)phenyl]-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred choices because they exhibit very good properties.

[0167] The host material may be a mixture of a plurality of substances. When a mixture of host materials is used, it is preferable to mix a material having electron transport properties with a material having hole transport properties. By mixing a material having electron transport properties with a material having hole transport properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination region can also be easily controlled. The weight ratio of the content of the material having hole transport properties to the material having electron transport properties may be 1:19 to 19:1 (material having hole transport properties:material having electron transport properties).

[0168] A phosphorescent material can be used as part of the mixed material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as a light-emitting material.

[0169] Furthermore, these mixed materials may form an exciplex. It is preferable to select a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, because this allows for smooth energy transfer and efficient light emission. Furthermore, using this structure is also preferable because it reduces the driving voltage.

[0170] At least one of the materials forming the exciplex may be a phosphorescent material, which allows efficient conversion of triplet excitation energy into singlet excitation energy through reverse intersystem crossing.

[0171] As a combination of materials that efficiently form an exciplex, it is preferable that the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. Also, it is preferable that the LUMO level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties. Note that the LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0172] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of a material having hole transport properties, a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak on the longer wavelength side). Alternatively, the formation of exciplexes can be confirmed by comparing the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0173] The electron transport layers (the first electron transport layer 114_1 and the second electron transport layer 114_2) are layers containing a substance having an electron transport property. The material having an electron transport property is a material having an electron mobility of 1×10 or less at a square root of an electric field strength [V / cm] of 600. −７ cm ２ / Vs or more, preferably 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that, other substances can be used as long as they have a higher electron transporting property than holes. Note that, as the organic compound, an organic compound having a π-electron-deficient heteroaromatic ring is preferred. As the organic compound having a π-electron-deficient heteroaromatic ring, for example, one or more of an organic compound including a heteroaromatic ring having an azole skeleton, an organic compound including a heteroaromatic ring having a pyridine skeleton, an organic compound including a heteroaromatic ring having a diazine skeleton, and an organic compound including a heteroaromatic ring having a triazine skeleton are preferred.

[0174] As the organic compound having electron transport properties that can be used in the electron transport layer, the same organic compounds that can be used as the organic compound having electron transport properties in the N-type layer in the intermediate layer 116 can be used. Among them, organic compounds including a heteroaromatic ring with a diazine skeleton, an organic compound including a heteroaromatic ring with a pyridine skeleton, and an organic compound including a heteroaromatic ring with a triazine skeleton are preferred because of their high reliability. In particular, organic compounds including a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton and organic compounds including a heteroaromatic ring with a triazine skeleton have high electron transport properties and contribute to reducing driving voltage.

[0175] The electron transport layer has an electron mobility of 1×10 when the square root of the electric field strength [V / cm] is 600. −７ cm ２ / Vs or more 5×10 −５ cm ２ / Vs or less. By reducing the electron transport property of the electron-transport layer 114, the amount of electrons injected into the light-emitting layer can be controlled, and the light-emitting layer can be prevented from becoming an electron-excess state. This structure is particularly preferable because a lifetime is improved when the hole-injection layer is formed of a composite material and the HOMO level of the material having hole-transport properties in the composite material is a substance having a relatively low HOMO level of -5.7 eV or more and -5.4 eV or less. In this case, the HOMO level of the material having electron-transport properties is preferably -6.0 eV or more.

[0176] The electron injection layer 115 may be formed of any of the organic compounds having a basic skeleton, such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ２The electron injection layer 115 may be a layer containing an alkali metal, an alkaline earth metal, or a rare earth metal, such as lithium 8-hydroxyquinolinato (abbreviation: Liq), or ytterbium (Yb), or a compound or complex thereof. The electron injection layer 115 may be a layer made of a substance having electron transport properties containing an alkali metal, an alkaline earth metal, or a compound thereof, or may be an electride. Examples of the electride include a substance in which electrons are added at a high concentration to a mixed oxide of calcium and aluminum.

[0177] Note that a layer containing a substance having an electron transport property (preferably an organic compound having a bipyridine skeleton) containing a fluoride of the alkali metal or alkaline earth metal at a concentration (50 wt % or more) that results in a microcrystalline state can also be used as the electron-injection layer 115. Since this layer has a low refractive index, it is possible to provide a light-emitting device with better external quantum efficiency.

[0178] The second electrode 102 is an electrode including a cathode. The second electrode 102 may have a stacked structure, in which case the layer in contact with the organic compound layer 103 functions as the cathode. Materials that form the cathode include metals, alloys, electrically conductive compounds, and mixtures thereof that have a small work function (specifically, 3.8 eV or less). Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), alloys containing these elements (MgAg, AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these elements. However, by providing an electron injection layer between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide can be used as the cathode regardless of the magnitude of the work function.

[0179] Note that when the second electrode 102 is formed using a material that is transparent to visible light, a light-emitting device that emits light from the second electrode 102 side can be obtained.

[0180] These conductive materials can be formed into films by dry methods such as vacuum deposition or sputtering, inkjet methods, spin coating methods, etc. Alternatively, they may be formed by wet methods using a sol-gel method, or by wet methods using a paste of a metal material.

[0181] In addition, various methods, whether dry or wet, can be used to form the organic compound layer 103. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, spin coating, or the like may be used.

[0182] Furthermore, the above-mentioned electrodes or layers may be formed using different film formation methods.

[0183] FIG. 1C shows two adjacent light-emitting devices (light-emitting device 130a and light-emitting device 130b) included in a light-emitting device according to one embodiment of the present invention.

[0184] The light-emitting device 130a includes an organic compound layer 103a between a first electrode 101a and a second electrode 102 on an insulating layer 175. The organic compound layer 103a includes a first light-emitting unit 501a and a second light-emitting unit 502a stacked with an intermediate layer 116a sandwiched therebetween. While FIG. 1C illustrates an example in which two light-emitting units are stacked, a configuration in which three or more light-emitting units are stacked may also be used. The first light-emitting unit 501a includes a hole injection layer 111a, a first hole transport layer 112a_1, a first light-emitting layer 113a_1, and a first electron transport layer 114a_1. The intermediate layer 116a includes a P-type layer 117a, an electron relay layer 118a, and an N-type layer 119a. The electron relay layer 118a is optional. The second light-emitting unit 502 a includes a second hole-transporting layer 112 a 2 , a second light-emitting layer 113 a 2 , a second electron-transporting layer 114 a 2 , and an electron-injecting layer 115 .

[0185] The light-emitting device 130b includes an organic compound layer 103b between a first electrode 101b and a second electrode 102 on an insulating layer 175. The organic compound layer 103b includes a first light-emitting unit 501b and a second light-emitting unit 502b stacked with an intermediate layer 116b sandwiched therebetween. While FIG. 1C illustrates an example in which two light-emitting units are stacked, a configuration in which three or more light-emitting units are stacked may also be used. The first light-emitting unit 501b includes a hole injection layer 111b, a first hole transport layer 112b_1, a first light-emitting layer 113b_1, and a first electron transport layer 114b_1. The intermediate layer 116b includes a P-type layer 117b, an electron relay layer 118b, and an N-type layer 119b. The electron relay layer 118b is optional. The second light-emitting unit 502 b includes a second hole-transporting layer 112 b 2 , a second light-emitting layer 113 b 2 , a second electron-transporting layer 114 b 2 , and an electron-injecting layer 115 .

[0186] The electron injection layer 115 and the second electrode 102 are preferably a continuous layer shared by the light-emitting device 130a and the light-emitting device 130b. The organic compound layers 103a and 103b other than the electron injection layer 115 are processed by photolithography after the second electron transport layer 114a_2 and the second electron transport layer 114b_2 are formed, respectively, and are therefore independent of each other. The edge (outline) of the organic compound layer 103a other than the electron injection layer 115 is processed by photolithography, so that the edge is generally aligned in the vertical direction with respect to the substrate. The edge (outline) of the organic compound layer 103b other than the electron injection layer 115 is processed by photolithography, so that the edge is generally aligned in the vertical direction with respect to the substrate.

[0187] Furthermore, the distance d between the first electrode 101a and the first electrode 101b can be made smaller than that when mask vapor deposition is performed because the organic compound layer is processed by photolithography, and can be set to 2 μm or more and 5 μm or less.

[0188] The structure of this embodiment mode can be used in appropriate combination with other structures.

[0189] 2A and 2B , a light-emitting device is formed by forming a plurality of the light-emitting devices 130 described in the previous Embodiment 2 over an insulating layer 175. In this embodiment, a light-emitting device according to one embodiment of the present invention will be described in detail.

[0190] The light emitting device 1000 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0191] In this specification and the like, matters common to, for example, the subpixel 110R, the subpixel 110G, and the subpixel 110B may be described by referring to the subpixel 110. Furthermore, for components distinguished by alphabets, matters common to the corresponding structures may be described by using symbols without the alphabets.

[0192] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel portion 177. Note that in this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but the present invention is not limited to this configuration. That is, combinations of sub-pixels of other colors may also be used. For example, the number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include sub-pixels of four colors: R, G, B, and white (W); sub-pixels of four colors: R, G, B, and Y; and sub-pixels of R, G, B, and infrared (IR).

[0193] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0194] 2A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may also be arranged side by side in the Y direction, and subpixels of the same color may also be arranged side by side in the X direction.

[0195] A connection portion 140 and a region 141 may be provided outside the pixel portion 177. For example, the region 141 may be provided between the pixel portion 177 and the connection portion 140. An organic compound layer 103 is provided in the region 141. In addition, a conductive layer 151C is provided in the connection portion 140.

[0196] 2 shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0197] 2B is an example of a cross-sectional view taken along dashed line A1-A2 in FIG. 2A. As shown in FIG. 2A, the light-emitting device 1000 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 may be provided on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 have openings that reach the conductive layer 172, and a plug 176 is provided to fill the opening.

[0198] In the pixel section 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. An inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 may be provided between adjacent light-emitting devices 130.

[0199] 2B shows multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected to one another when the light-emitting device 1000 is viewed from above. In other words, the insulating layer 127 has an opening on the first electrode.

[0200] 2B shows light emitting device 130 as light emitting device 130R, light emitting device 130G, and light emitting device 130B. Light emitting device 130R, light emitting device 130G, and light emitting device 130B emit light of different colors. For example, light emitting device 130R can emit red light, light emitting device 130G can emit green light, and light emitting device 130B can emit blue light. Light emitting device 130R, light emitting device 130G, or light emitting device 130B may also emit other visible light or infrared light.

[0201] The organic compound layer 103 has at least a light-emitting layer and may have other functional layers (a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, an electron injection layer, etc.). The organic compound layer 103 and the common layer 104 may be combined to form functional layers (a hole injection layer, a hole transport layer, a hole blocking layer, a light-emitting layer, an electron blocking layer, an electron transport layer, an electron injection layer, etc.) included in an EL layer that emits light.

[0202] The light-emitting device of one embodiment of the present invention can be, for example, a top-emission type that emits light in a direction opposite to a substrate on which the light-emitting device is formed. Note that the light-emitting device of one embodiment of the present invention may also be a bottom-emission type.

[0203] The light-emitting device 130R has the structure shown in Embodiment 2. It includes a first electrode (pixel electrode) including a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer.

[0204] Note that the common layer 104 is not necessarily provided. By providing the common layer 104, damage to the organic compound layer 103R in a later process can be reduced. Furthermore, when the common layer 104 is provided, the common layer 104 may function as an electron injection layer. When the common layer 104 functions as an electron injection layer, the stacked structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 2.

[0205] Here, the light-emitting device 130 has the structure shown in Embodiment 2. It includes a first electrode (pixel electrode) including a conductive layer 151 and a conductive layer 152, an organic compound layer 103 on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer.

[0206] One of the pixel electrode and the common electrode of the light-emitting device functions as an anode and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0207] In the light-emitting device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device may have a stacked-layer structure. For example, in the example shown in FIG. 2B , the first electrode of the light-emitting device 130 has a stacked-layer structure of a conductive layer 151 and a conductive layer 152.

[0208] For example, when the light-emitting device 1000 is a top-emission type, the pixel electrode of the light-emitting device 130 preferably has a conductive layer 151 with high reflectivity for visible light and a conductive layer 152 that is transparent to visible light and has a high work function. The higher the reflectivity of the pixel electrode for visible light, the higher the extraction efficiency of light emitted from the organic compound layer 103. Furthermore, when the pixel electrode functions as an anode, the higher the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Therefore, by forming the pixel electrode of the light-emitting device 130 into a stacked structure of the conductive layer 151 with high reflectivity for visible light and the conductive layer 152 with a high work function, the light-emitting device 130 can be a light-emitting device with high light extraction efficiency and low driving voltage.

[0209] Specifically, the reflectance of the conductive layer 151 with respect to visible light is preferably, for example, 40% to 100%, or 70% to 100%. When the conductive layer 152 is used as an electrode that transmits visible light, the transmittance of the conductive layer 152 with respect to visible light is preferably, for example, 40% or more.

[0210] Furthermore, when a film formed after forming a pixel electrode having a laminated structure is removed by a wet etching method or the like, the structure may be impregnated with a chemical solution used for etching. If the impregnated chemical solution comes into contact with the pixel electrode, galvanic corrosion or the like may occur between the multiple layers that make up the pixel electrode, which may cause deterioration of the pixel electrode.

[0211] Therefore, it is preferable to form the conductive layer 152 so as to cover the top surface and side surfaces of the conductive layer 151. By covering the conductive layer 151 with the conductive layer 152, the impregnated chemical solution does not come into contact with the conductive layer 151, and galvanic corrosion of the pixel electrode can be suppressed. Therefore, the light-emitting device 1000 can be manufactured by a method with a high yield, and therefore can be a low-cost light-emitting device. Furthermore, since the occurrence of defects in the light-emitting device 1000 can be suppressed, the light-emitting device 1000 can be a highly reliable light-emitting device.

[0212] For example, a metal material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals, can also be used.

[0213] An oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used for the conductive layer 152. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0214] Note that the conductive layer 151 preferably has a tapered edge. Specifically, the conductive layer 151 preferably has a tapered edge with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered edge. By tapering the side surface of the conductive layer 152, coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.

[0215] In the case where the conductive layer 151 or the conductive layer 152 has a layered structure, at least one side surface thereof preferably has a tapered shape. In addition, in the layered structure constituting each conductive layer, each layer may have a different tapered shape.

[0216] 3A illustrates a case where the conductive layer 151 has a stacked structure of multiple layers containing different materials. As illustrated in FIG. 3A, the conductive layer 151 includes a conductive layer 151_1, a conductive layer 151_2 over the conductive layer 151_1, and a conductive layer 151_3 over the conductive layer 151_2.

[0217] The conductive layer 151_2 is sandwiched between the conductive layer 151_1 and the conductive layer 151_3, which allows for a wider range of material options for the conductive layer 151_2. This allows the conductive layer 151_2 to have a higher reflectivity for visible light than at least one of the conductive layer 151_1 and the conductive layer 151_3. For example, aluminum can be used for the conductive layer 151_2. Note that an alloy containing aluminum may be used for the conductive layer 151_2. Furthermore, titanium, which has a lower reflectivity for visible light than aluminum but is less likely to migrate than aluminum even when in contact with the insulating layer 175, can be used for the conductive layer 151_1. Furthermore, titanium, which has a lower reflectivity for visible light than aluminum but is less likely to oxidize than aluminum and has an oxide with lower electrical resistivity than aluminum oxide, can be used for the conductive layer 151_3.

[0218] The conductive layer 151_3 may be made of silver or an alloy containing silver. Here, an alloy containing silver may be, for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). When silver or an alloy containing silver is used for the conductive layer 151_3 and aluminum is used for the conductive layer 151_2, the reflectance of the conductive layer 151_3 to visible light can be made higher than the reflectance of the conductive layer 151_2 to visible light. Here, the conductive layer 151_2 may be made of silver or an alloy containing silver. The conductive layer 151_1 may be made of silver or an alloy containing silver.

[0219] On the other hand, a film using titanium has better etching processability than a film using silver. Therefore, by using titanium for the conductive layer 151_3, the conductive layer 151_3 can be easily formed. Note that a film using aluminum also has better etching processability than a film using silver.

[0220] As described above, the characteristics of the light-emitting device can be improved by forming the conductive layer 151 into a stacked structure of a plurality of layers. For example, the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency and high reliability.

[0221] Here, when a microcavity structure is applied to the light-emitting device 130, the light extraction efficiency of the light-emitting device 1000 can be suitably improved by using silver, which is a material with high reflectivity for visible light, or an alloy containing silver as the conductive layer 151_3.

[0222] 3A , depending on the material selection or processing method of the conductive layer 151, the side surface of the conductive layer 151_2 may be located inside the side surfaces of the conductive layer 151_1 and the conductive layer 151_3, forming a protruding portion, which may reduce the coverage of the conductive layer 152 with respect to the conductive layer 151, and may cause a step disconnection of the conductive layer 152.

[0223] 3A shows an example in which the insulating layer 156 is provided over the conductive layer 151_1 so as to have a region overlapping with the side surface of the conductive layer 151_2. This can prevent the conductive layer 152 from being broken or thinned due to the protrusion, thereby suppressing poor connection or an increase in driving voltage.

[0224] 3A illustrates a structure in which the side surfaces of the conductive layer 151_2 are entirely covered with the insulating layer 156, but the side surfaces of the conductive layer 151_2 may not be partially covered with the insulating layer 156. Similarly, in pixel electrodes having structures described below, the side surfaces of the conductive layer 151_2 may not be partially covered with the insulating layer 156.

[0225] 3A, the insulating layer 156 preferably has a curved surface. This can reduce the occurrence of discontinuities in the conductive layer 152 covering the insulating layer 156, compared to when the side surfaces of the insulating layer 156 are vertical (parallel to the Z direction). Even when the insulating layer 156 has a tapered side surface, specifically a tapered shape with a taper angle of less than 90°, the occurrence of discontinuities in the conductive layer 152 covering the insulating layer 156 can be reduced, compared to when the side surfaces of the insulating layer 156 are vertical. As described above, the light-emitting device 1000 can be manufactured using a method with a high yield. Furthermore, the occurrence of defects can be reduced, making the light-emitting device 1000 a highly reliable light-emitting device.

[0226] Note that one embodiment of the present invention is not limited thereto. For example, other structures of the first electrode 101 are shown in FIGS.

[0227] FIG. 3B shows a structure in which the insulating layer 156 covers not only the side surfaces of the conductive layer 151_2 but also the side surfaces of the conductive layers 151_1, 151_2, and 151_3 in the first electrode 101 of FIG.

[0228] FIG. 3C shows a configuration in which the insulating layer 156 is not provided in the first electrode 101 of FIG.

[0229] FIG. 3D shows a structure in which the conductive layer 151 does not have a layered structure and the conductive layer 152 has a layered structure in the first electrode 101 of FIG.

[0230] The conductive layer 152_1 has higher adhesion to the conductive layer 152_2 than the insulating layer 175, for example. The conductive layer 152_1 can be formed using an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon can be preferably used. This can prevent peeling of the conductive layer 152_2. Furthermore, the conductive layer 152_2 can be configured not to be in contact with the insulating layer 175.

[0231] The conductive layer 152_2 has a higher reflectivity for visible light (for example, reflectivity for light with a predetermined wavelength in the range of 400 nm to 750 nm) than the conductive layers 151, 152_1, and 152_2. The reflectivity of the conductive layer 152_2 for visible light can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. The conductive layer 152_2 can be made of, for example, silver or an alloy containing silver. An example of an alloy containing silver is an alloy of silver, palladium, and copper (APC). As described above, the light-emitting device 1000 can have high light extraction efficiency. Note that a metal other than silver may be used for the conductive layer 152_2.

[0232] When the conductive layers 151 and 152 function as anodes, the conductive layer 152_1 preferably has a high work function. The conductive layer 152_3 has a work function higher than that of the conductive layer 152_2, for example. The conductive layer 152_3 can be made of the same material as that of the conductive layer 152_1, for example. For example, the conductive layer 152_1 and the conductive layer 152_3 can be made of the same material.

[0233] Note that when the conductive layers 151 and 152 function as cathodes, they preferably have a low work function. For example, the conductive layer 152_3 has a work function smaller than that of the conductive layer 152_2.

[0234] The conductive layer 152_3 preferably has high transmittance to visible light (for example, transmittance to light with a predetermined wavelength in the range of 400 nm to 750 nm). For example, the transmittance of the conductive layer 152_3 to visible light is preferably higher than that of the conductive layer 151 and the conductive layer 152_2. For example, the transmittance of the conductive layer 152_3 to visible light can be 60% to 100%, preferably 70% to 100%, and more preferably 80% to 100%. As a result, the amount of light emitted from the organic compound layer 103 that is absorbed by the conductive layer 152_3 can be reduced. As described above, the conductive layer 152_2 under the conductive layer 152_3 can have high reflectance to visible light. Therefore, the light-emitting device 1000 can have high light extraction efficiency.

[0235] Next, an example of a method for manufacturing the light emitting device 1000 having the structure shown in FIG. 2 will be described with reference to FIGS.

[0236] [Fabrication Method Example 1] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a light-emitting device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an ALD method, etc. Examples of CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method.

[0237] In particular, vacuum processes such as vapor deposition, and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, etc.) included in the organic compound layer can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0238] Furthermore, when processing the thin film that constitutes the light-emitting device, it can be processed using, for example, a photolithography method. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method, etc. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0239] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0240] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0241] 4A , an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0242] The substrate may be a substrate having heat resistance sufficient to withstand at least a subsequent heat treatment. When an insulating substrate is used, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. Furthermore, a semiconductor substrate such as a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate may be used.

[0243] 4A, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Then, plugs 176 are formed to fill the openings.

[0244] 4A , a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, sputtering or vacuum deposition. The conductive film 151f can be made of, for example, a metal material.

[0245] 4A, a resist mask 191 is formed over the conductive film 151f, for example. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0246] 4B , for example, the conductive film 151f in a region that does not overlap with the resist mask 191 is removed by, for example, etching, specifically, dry etching. Note that if the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed by wet etching. As a result, the conductive layer 151 is formed. Note that, for example, when part of the conductive film 151f is removed by dry etching, a recess (also referred to as a countersink) may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0247] 4C, the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, or by ashing using oxygen gas and CF４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ Alternatively, a Group 18 element such as He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0248] 4D , an insulating film 156f, which will later become the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C, is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, and the insulating layer 175. The insulating film 156f can be formed by, for example, a CVD method, an ALD method, a sputtering method, or a vacuum deposition method.

[0249] The insulating film 156f can be formed using an inorganic material. For example, the insulating film 156f can be formed using an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, the insulating film 156f can be formed using an oxide insulating film containing silicon, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, the insulating film 156f can be formed using silicon oxynitride.

[0250] 4E, the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C. For example, the insulating layer 156 can be formed by uniformly etching the top surface of the insulating film 156f. Such uniform etching and planarization is also called an etch-back process. The insulating layer 156 may also be formed by photolithography.

[0251] 5A , a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, is formed on the conductive layers 151R, 151G, 151B, 151C, the insulating layers 156R, 156G, 156B, 156C, and the insulating layer 175. Specifically, the conductive film 152f is formed so as to cover, for example, the conductive layers 151R, 151G, 151B, 151C, the insulating layers 156R, 156G, 156B, and 156C.

[0252] The conductive film 152f can be formed by, for example, sputtering or vacuum evaporation. Alternatively, the conductive film 152f can be formed by ALD. Alternatively, the conductive film 152f can be formed using, for example, a conductive oxide. Alternatively, the conductive film 152f can have a stacked structure of a film using a metal material and a film using a conductive oxide thereon. For example, the conductive film 152f can have a stacked structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide thereon.

[0253] 5B , the conductive film 152f is processed by, for example, photolithography to form conductive layers 152R, 152G, 152B, and 152C. Specifically, for example, after forming a resist mask, part of the conductive film 152f is removed by etching. The conductive film 152f can be removed by, for example, wet etching. Alternatively, the conductive film 152f may be removed by dry etching. In this manner, a pixel electrode including the conductive layer 151 and the conductive layer 152 is formed.

[0254] Subsequently, it is preferable to perform hydrophobic treatment on the conductive layer 152. The hydrophobic treatment can change the surface to be treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface to be treated. By performing the hydrophobic treatment on the conductive layer 152, adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be increased, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily performed.

[0255] Subsequently, as shown in FIG. 5C, an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed on the conductive layers 152B, 152G, 152R, and the insulating layer 175.

[0256] In the present invention, the organic compound film 103Bf has a plurality of organic compound layers each having at least one light-emitting layer. Specifically, the structure of the light-emitting device 130 described in Embodiment 2 can be referred to. Alternatively, the organic compound film 103Bf may have a structure in which a plurality of organic compound layers each having at least one light-emitting layer are stacked with an intermediate layer interposed therebetween.

[0257] 5C , the organic compound film 103Bf is not formed on the conductive layer 152C. For example, by using a mask for defining the film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), the organic compound film 103Bf can be formed only in the desired region. By employing a film formation process using an area mask and a processing process using a resist mask, the light-emitting device can be manufactured through a relatively simple process.

[0258] The organic compound film 103Bf can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method. Alternatively, the organic compound film 103Bf may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0259] Subsequently, as shown in FIG. 5D, a sacrificial film 158Bf, which will later become the sacrificial layer 158B, and a mask film 159Bf, which will later become the mask layer 159B, are formed in this order on the organic compound film 103Bf.

[0260] The sacrificial film 158Bf and the mask film 159Bf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. Alternatively, they may be formed by the wet film formation method described above.

[0261] The sacrificial film 158Bf and the mask film 159Bf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Bf. The substrate temperature when forming the sacrificial film 158Bf and the mask film 159Bf is typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and even more preferably 80° C. or lower.

[0262] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure of the sacrificial film 158Bf and the mask film 159Bf, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0263] By providing a sacrificial layer on the organic compound film 103Bf, damage to the organic compound film 103Bf during the manufacturing process of the light-emitting device can be reduced, and the reliability of the light-emitting device can be improved.

[0264] The sacrificial film 158Bf is made of a film that is highly resistant to the processing conditions of the organic compound film 103Bf, specifically, a film that has a high etching selectivity with respect to the organic compound film 103Bf, and the mask film 159Bf is made of a film that has a high etching selectivity with respect to the sacrificial film 158Bf.

[0265] The sacrificial film 158Bf and the mask film 159Bf are preferably made of films that can be removed by wet etching, which can reduce damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf compared to when dry etching is used.

[0266] When wet etching is used, it is particularly preferable to use an acidic chemical solution, such as a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution of two or more acids (also called mixed acid).

[0267] The sacrificial film 158Bf and the mask film 159Bf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0268] Furthermore, by using a film containing a material that blocks ultraviolet light for the sacrificial film 158Bf and the mask film 159Bf, it is possible to prevent the organic compound layer from being irradiated with ultraviolet light during, for example, an exposure process. Suppressing damage to the organic compound layer due to ultraviolet light can improve the reliability of the light-emitting device.

[0269] The same effect can be achieved when a film containing a material that blocks ultraviolet light is used as the material for the inorganic insulating film 125f, which will be described later.

[0270] The sacrificial film 158Bf and the mask film 159Bf may be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. In particular, it is preferable to use a low-melting-point material such as aluminum or silver.

[0271] Furthermore, for the sacrificial film 158Bf and the mask film 159Bf, metal oxides such as In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), and indium tin oxide containing silicon can be used, respectively.

[0272] Furthermore, it is preferable to use semiconductor materials such as silicon or germanium for the sacrificial film 158Bf and the mask film 159Bf because they have high compatibility with semiconductor manufacturing processes. Oxides or nitrides of the above semiconductor materials can also be used. Metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can also be used. Alternatively, oxides containing the above metals, such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can also be used.

[0273] Furthermore, various inorganic insulating films can be used for the sacrificial film 158Bf and the mask film 159Bf. In particular, oxide insulating films are preferable because they have higher adhesion to the organic compound film 103Bf than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial film 158Bf and the mask film 159Bf. For example, aluminum oxide films can be formed as the sacrificial film 158Bf and the mask film 159Bf using the ALD method. Using the ALD method is preferable because it reduces damage to the underlying layer (particularly the organic compound layer).

[0274] Alternatively, an organic material may be used for one or both of the sacrificial film 158Bf and the mask film 159Bf. For example, a material that can be dissolved in a chemically stable solvent may be used as the organic material, at least for the film located at the top of the organic compound film 103Bf. Materials that dissolve in water or alcohol are particularly suitable. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol using a wet film formation method, and then perform a heat treatment to evaporate the solvent. Performing the heat treatment under a reduced pressure atmosphere allows the solvent to be removed at a low temperature in a short time, thereby reducing thermal damage to the organic compound film 103Bf, which is preferable.

[0275] The sacrificial film 158Bf and the mask film 159Bf may each be made of an organic resin.

[0276] For example, the sacrificial film 158Bf may be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method, and the mask film 159Bf may be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0277] 5D, a resist mask 190B is formed on the mask film 159Bf. The resist mask 190B can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0278] The resist mask 190B may be made of either a positive resist material or a negative resist material.

[0279] The resist mask 190B is provided in a position overlapping with the conductive layer 152B. The resist mask 190B is preferably also provided in a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the light-emitting device. Note that the resist mask 190B does not necessarily have to be provided on the conductive layer 152C. Furthermore, as shown in the cross-sectional view between B1 and B2 in FIG. 5C , the resist mask 190B is preferably provided so as to cover from the end of the organic compound film 103Bf to the end of the conductive layer 152C (the end on the organic compound film 103Bf side).

[0280] 5E, a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B and the conductive layer 152C. The resist mask 190B is then removed. The mask layer 159B is used as a mask (also referred to as a hard mask) to remove a portion of the sacrificial film 158Bf to form a sacrificial layer 158B.

[0281] The sacrificial film 158Bf and the mask film 159Bf can be processed by wet etching or dry etching, respectively, and are preferably processed by wet etching.

[0282] By using the wet etching method, damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to when using the dry etching method.

[0283] In processing the mask film 159Bf, the organic compound film 103Bf is not exposed, and therefore the range of processing methods to be selected is wider than in processing the sacrificial film 158Bf. Specifically, even when a gas containing oxygen is used as an etching gas in processing the mask film 159Bf, deterioration of the organic compound film 103Bf can be further suppressed.

[0284] When wet etching is used, it is particularly preferable to use an acidic chemical solution.

[0285] Furthermore, when dry etching is used to process the sacrificial film 158Bf, deterioration of the organic compound film 103Bf can be suppressed by not using a gas containing oxygen as the etching gas. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing a Group 18 element such as He or the like as the etching gas.

[0286] The resist mask 190B can be removed by the same method as the resist mask 191. At this time, the sacrificial film 158Bf is located on the outermost surface and the organic compound film 103Bf is not exposed, so that damage to the organic compound film 103Bf can be suppressed in the process of removing the resist mask 190B. Furthermore, the range of options for removing the resist mask 190B can be expanded.

[0287] 5E, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as a hard mask to remove a portion of the organic compound film 103Bf, thereby forming the organic compound layer 103B.

[0288] 5E, a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B, and the conductive layer 152G and the conductive layer 152B are exposed.

[0289] The organic compound film 103Bf can be processed by dry etching or wet etching. For example, when processing by dry etching, an etching gas containing oxygen can be used. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This makes it possible to suppress damage to the organic compound film 103Bf. Furthermore, it is possible to suppress problems such as adhesion of reaction products that occur during etching.

[0290] As described above, in one embodiment of the present invention, the resist mask 190B is formed over the mask film 159Bf, and part of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. Then, part of the organic compound film 103Bf is removed using the mask layer 159B as a hard mask to form the organic compound layer 103B. Note that part of the organic compound film 103Bf may be removed using the resist mask 190B. Then, the resist mask 190B may be removed.

[0291] Here, the conductive layer 152G may be subjected to hydrophobic treatment as needed. During processing of the organic compound film 103Bf, for example, the surface state of the conductive layer 152G may change to a hydrophilic state. For example, by subjecting the conductive layer 152G to hydrophobic treatment, for example, the adhesion between the conductive layer 152G and a layer (here, the organic compound layer 103G) formed in a later process can be improved, and film peeling can be suppressed.

[0292] Subsequently, as shown in FIG. 6A, an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152R, the mask layer 159B, and the insulating layer 175.

[0293] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Bf, and can have the same structure as the organic compound film 103Bf.

[0294] 6B , a sacrificial film 158Gf, which will later become the sacrificial layer 158G, and a mask film 159Gf, which will later become the mask layer 159G, are sequentially formed on the organic compound film 103Gf and the mask layer 159B. A resist mask 190G is then formed. The materials and formation methods for the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Bf and the mask film 159Bf. The materials and formation methods for the resist mask 190G are the same as those applicable to the resist mask 190B.

[0295] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0296] 6C, a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. The mask layer 159G is then used as a mask to remove a portion of the sacrificial film 158Gf to form a sacrificial layer 158G. The organic compound film 103Gf is then processed to form the organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as hard masks to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.

[0297] 6C, a laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G, and the mask layer 159B and the conductive layer 152R are exposed.

[0298] Subsequently, as shown in FIG. 7A, an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed on the conductive layer 152R, the mask layer 159G, the mask layer 159B, and the insulating layer 175.

[0299] The organic compound film 103Rf can be formed by the same method as that used to form the organic compound film 103Gf, and can have the same structure as the organic compound film 103Gf.

[0300] 7B and 7C, a sacrificial layer 158 is formed from the sacrificial film 158Rf, a mask layer 159R is formed from the mask film 159Rf, or an organic compound layer 103R is formed from the organic compound film 103Rf. The methods for forming the sacrificial layer 158R, the mask layer 159R, and the organic compound layer 103R can be referred to the description of the organic compound layer 103G.

[0301] It is preferable that the side surfaces of the organic compound layers 103B, 103G, and 103R are perpendicular or substantially perpendicular to the surface on which they are formed. For example, it is preferable that the angle formed between the surface on which they are formed and these side surfaces be 60 degrees or more and 90 degrees or less.

[0302] As described above, the distance between adjacent pairs of the organic compound layers 103B, 103G, and 103R formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of adjacent pairs of the organic compound layers 103B, 103G, and 103R. By narrowing the distance between the island-shaped organic compound layers in this manner, a light-emitting device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. Note that the distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0303] Next, as shown in FIG. 8A, the mask layers 159B, 159G, and 159R are removed.

[0304] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layers 103B, 103G, and 103R during the mask layer removal can be reduced compared to when a dry etching method is used.

[0305] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0306] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, as well as water adsorbed on the surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. For example, a heat treatment can be performed in an inert atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced-pressure atmosphere is preferable because it enables drying at a lower temperature.

[0307] Next, as shown in FIG. 8B, an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R.

[0308] As will be described later, an insulating film that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f. Therefore, it is preferable that the upper surface of the inorganic insulating film 125f has a high affinity with the material (e.g., a photosensitive resin composition containing an acrylic resin) used for the insulating film that will become the insulating layer 127. To improve this affinity, a surface treatment may be performed on the upper surface of the inorganic insulating film 125f. Specifically, it is preferable to hydrophobize (or increase the hydrophobicity of) the surface of the inorganic insulating film 125f. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this manner, the insulating film 127f can be formed with good adhesion.

[0309] Subsequently, as shown in FIG. 8C, an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0310] The inorganic insulating film 125f and the insulating film 127f are preferably formed by a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, it is preferably formed by a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R than the insulating film 127f.

[0311] The inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat-resistant temperatures of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, respectively. By increasing the substrate temperature during film formation, the inorganic insulating film 125f can be formed as a film with a low impurity concentration and a high barrier property against at least one of water and oxygen, even if it is thin.

[0312] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0313] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0314] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and form a film with high coverage. The inorganic insulating film 125f is preferably formed as an aluminum oxide film by, for example, the ALD method.

[0315] Alternatively, the inorganic insulating film 125f may be formed by sputtering, CVD, or PECVD, which have a faster film formation rate than ALD, thereby enabling highly reliable light-emitting devices to be manufactured with high productivity.

[0316] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0317] The insulating film 127f is preferably formed using, for example, a resin composition containing a polymer, an acid generator, and a solvent. The polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also referred to as constituent units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates an acid upon irradiation with light and a compound that generates an acid upon heating can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0318] Furthermore, heat treatment (also referred to as pre-baking) is preferably performed after the insulating film 127f is formed. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. The substrate temperature during the heat treatment is preferably 50° C. or higher and 200° C. or lower, more preferably 60° C. or higher and 150° C. or lower, and even more preferably 70° C. or higher and 120° C. or lower. This allows the solvent contained in the insulating film 127f to be removed.

[0319] Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light for photosensitization. If a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will not be formed in a later process. The insulating layer 127 is formed in the region sandwiched between any two of the conductive layers 152B, 152G, and 152R, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layers 152B, 152G, 152R, and 152C. If a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will be formed.

[0320] The width of the insulating layer 127 to be formed later can be controlled by the exposed region of the insulating film 127f. In this embodiment mode, the insulating layer 127 is processed to have a portion overlapping with the top surface of the conductive layer 151.

[0321] Here, by providing a barrier insulating layer against oxygen (e.g., an aluminum oxide film) as one or both of the sacrificial layer 158 (sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R) and the inorganic insulating film 125f, it is possible to reduce the diffusion of oxygen into the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer becomes excited, which may promote a reaction with oxygen contained in the atmosphere. More specifically, when the organic compound layer is irradiated with light (visible light or ultraviolet light) in an oxygen-containing atmosphere, oxygen may bond to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, it is possible to reduce the bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer.

[0322] 9A, development is performed to remove the exposed regions of the insulating film 127f, thereby forming an insulating layer 127a. The insulating layer 127a is formed in a region sandwiched between any two of the conductive layers 152B, 152G, and 152R, and in a region surrounding the conductive layer 152C. When an acrylic resin is used for the insulating film 127f, an alkaline solution, such as TMAH, can be used as the developer.

[0323] 9B , an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and reduce the thickness of a portion of the sacrificial layers 158B, 158G, and 158R. As a result, the inorganic insulating layer 125 is formed below the insulating layer 127a. Note that, hereinafter, the etching process for processing the inorganic insulating film 125f using the insulating layer 127a as a mask may be referred to as a first etching process.

[0324] That is, in the first etching process, the sacrificial layers 158B, 158G, and 158R are not completely removed, and the etching process is stopped when the film thicknesses of the sacrificial layers 158B, 158G, and 158R are reduced. In this manner, by leaving the sacrificial layers 158B, 158G, and 158R on the organic compound layers 103B, 103G, and 103R, respectively, it is possible to prevent the organic compound layers 103B, 103G, and 103R from being damaged in subsequent processes.

[0325] The first etching treatment can be performed by dry etching or wet etching. Note that, when the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158B, 158G, and 158R, the inorganic insulating film 125f can be processed and the exposed sacrificial layer 158 can be thinned in one go by the first etching treatment, which is preferable.

[0326] By performing etching using the insulating layer 127a, which has tapered side surfaces, as a mask, the side surfaces of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158B, 158G, and 158R can be tapered relatively easily.

[0327] For example, when the first etching process is performed by dry etching, a chlorine-based gas can be used. ２ , BCl ３ , SiCl ４ , and CCl ４ The chlorine-based gas may be added with oxygen gas, hydrogen gas, helium gas, argon gas, or the like, either alone or in combination of two or more gases. By using dry etching, thin regions of the sacrificial layers 158B, 158G, and 158R can be formed with good in-plane uniformity.

[0328] Furthermore, for example, the first etching process can be performed by wet etching, which can reduce damage to the organic compound layers 103B, 103G, and 103R compared to when dry etching is used.

[0329] The wet etching preferably uses an acidic chemical solution.

[0330] Alternatively, an alkaline solution can be used for wet etching. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. In this case, wet etching can be performed by a paddle method.

[0331] Next, heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into the insulating layer 127 having tapered side surfaces (FIG. 9C). The heat treatment is performed at a temperature lower than the upper temperature limit of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. The substrate temperature in the heat treatment in this step is preferably higher than that in the heat treatment (pre-baking) performed after the formation of the insulating film 127f.

[0332] The heat treatment can improve the adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127. Furthermore, the insulating layer 127a is deformed, so that the end portion of the inorganic insulating layer 125 can be covered with the insulating layer 127.

[0333] By leaving the sacrificial layers 158B, 158G, and 158R in a thinner state without completely removing them in the first etching treatment, the organic compound layers 103B, 103G, and 103R can be prevented from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0334] 10A , an etching process is performed using the insulating layer 127 as a mask to remove portions of the sacrificial layers 158B, 158G, and 158R. Note that at this time, a portion of the inorganic insulating layer 125 may also be removed. By this etching process, openings are formed in the sacrificial layers 158B, 158G, and 158R, and the top surfaces of the organic compound layers 103B, 103G, and 103R, and the conductive layer 152C are exposed through the openings. Note that hereinafter, the etching process that uses the insulating layer 127 as a mask to expose the organic compound layers 103B, 103G, and 103R may be referred to as a second etching process.

[0335] The second etching treatment is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced compared to when using the dry etching method. The wet etching can be performed using an acidic chemical solution or an alkaline solution, as in the first etching treatment.

[0336] Furthermore, after exposing portions of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, a heat treatment may be further performed. This heat treatment can remove water contained in the organic compound layer and water adsorbed to the surface of the organic compound layer. This heat treatment may also change the shape of the insulating layer 127. Specifically, the insulating layer 127 may extend to cover at least one of the ends of the inorganic insulating layer 125, the ends of the sacrificial layers 158B, 158G, and 158R, and the top surfaces of the organic compound layers 103B, 103G, and 103R.

[0337] Note that Figure 10A shows an example in which a portion of the end of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered by the insulating layer 127, and the tapered portion formed by the second etching process is exposed (see Figure 3A).

[0338] The insulating layer 127 may also cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may droop and cover the end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may contact the top surface of at least one of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0339] 10B , a common electrode 155 is formed on the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the conductive layer 152C, and the insulating layer 127. The common electrode 155 can be formed by a method such as sputtering or vacuum evaporation. Alternatively, the common electrode 155 may be formed by stacking a film formed by evaporation and a film formed by sputtering.

[0340] 10C, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0341] Subsequently, the substrate 120 is attached over the protective layer 131 using the resin layer 122, whereby a light-emitting device can be manufactured. As described above, in the manufacturing method of a light-emitting device according to one embodiment of the present invention, the insulating layer 156 is provided so as to have a region overlapping with a side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This can increase the yield of light-emitting devices and suppress the occurrence of defects.

[0342] As described above, in the manufacturing method of the light-emitting device according to one embodiment of the present invention, the island-shaped organic compound layers 103B, 103G, and 103R are formed by forming films over the entire surface and then processing them, rather than by using a fine metal mask. This allows the island-shaped layers to be formed with uniform thicknesses. This allows a high-resolution light-emitting device or a light-emitting device with a high aperture ratio to be realized. Furthermore, even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, the organic compound layers 103B, 103G, and 103R can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a light-emitting device with extremely high contrast. Furthermore, even in a light-emitting device including tandem light-emitting devices fabricated by photolithography, a light-emitting device with excellent characteristics can be provided.

[0343] Embodiment 4 In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS. 11A to 11G and 12A to 12I.

[0344] [Pixel Layout] In this embodiment, pixel layouts different from that shown in Fig. 2A will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0345] The top shape of the sub-pixels shown in the drawings in this embodiment mode corresponds to the top shape of the light-emitting region.

[0346] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0347] Furthermore, the layout of the circuits constituting the sub-pixels is not limited to the range of the sub-pixels shown in the drawings, and may be arranged outside of the range.

[0348] An S-stripe arrangement is applied to the pixel 178 shown in Fig. 11A. The pixel 178 shown in Fig. 11A is composed of three subpixels: a subpixel 110R, a subpixel 110G, and a subpixel 110B.

[0349] 11B includes a subpixel 110R having a generally trapezoidal top surface shape with rounded corners, a subpixel 110G having a generally triangular top surface shape with rounded corners, and a subpixel 110B having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 110R has a larger light-emitting area than the subpixel 110G. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size of the subpixel can be.

[0350] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 11C. Fig. 11C shows an example in which the pixel 124a having the subpixel 110R and the subpixel 110G and the pixel 124b having the subpixel 110G and the subpixel 110B are arranged alternately.

[0351] 11D to 11F are arranged in a delta arrangement. Pixel 124a has two subpixels (subpixel 110R and subpixel 110G) in the top row (first row) and one subpixel (subpixel 110B) in the bottom row (second row). Pixel 124b has one subpixel (subpixel 110B) in the top row (first row) and two subpixels (subpixel 110R and subpixel 110G) in the bottom row (second row).

[0352] Figure 11D is an example in which each subpixel has an approximately rectangular top surface shape with rounded corners, Figure 11E is an example in which each subpixel has a circular top surface shape, and Figure 11F is an example in which each subpixel has an approximately hexagonal top surface shape with rounded corners.

[0353] 11F, each subpixel is arranged inside a densely arranged hexagonal region. Focusing on a single subpixel, each subpixel is arranged so that it is surrounded by six other subpixels. Furthermore, subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, focusing on subpixel 110R, three subpixels 110G and three subpixels 110B are arranged alternately to surround it.

[0354] 11G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the row direction (for example, subpixels 110R and 110G, or subpixels 110G and 110B) are misaligned.

[0355] 11A to 11G, it is preferable that the subpixel 110R is the subpixel R that emits red light, the subpixel 110G is the subpixel G that emits green light, and the subpixel 110B is the subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their order of arrangement can be determined appropriately. For example, the subpixel 110G may be the subpixel R that emits red light, and the subpixel 110R may be the subpixel G that emits green light.

[0356] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This impairs the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, a pattern with rounded corners is likely to be formed. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0357] Furthermore, in a method for manufacturing a light-emitting device according to one embodiment of the present invention, an organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat resistance temperature of the organic compound layer. Therefore, depending on the heat resistance temperature of the material for the organic compound layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that is different from the desired shape during processing. As a result, the top surface shape of the organic compound layer may be a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the organic compound layer.

[0358] In order to make the top surface of the organic compound layer have a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, in the OPC technique, a correction pattern is added to, for example, a corner of a figure on the mask pattern.

[0359] As shown in Figures 12A to 12I, a pixel can be configured to have four types of sub-pixels.

[0360] The pixel 178 shown in FIGS. 12A to 12C is arranged in a stripe pattern.

[0361] FIG. 12A shows an example in which each subpixel has a rectangular top surface shape, FIG. 12B shows an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and FIG. 12C shows an example in which each subpixel has an elliptical top surface shape.

[0362] The pixels 178 shown in FIGS. 12D to 12F are arranged in a matrix.

[0363] Figure 12D is an example in which each subpixel has a square top surface shape, Figure 12E is an example in which each subpixel has an approximately square top surface shape with rounded corners, and Figure 12F is an example in which each subpixel has a circular top surface shape.

[0364] 12G and 12H show an example in which one pixel 178 is configured in two rows and three columns.

[0365] 12G has three subpixels (subpixels 110R, 110G, and 110B) in the top row (first row) and one subpixel (subpixel 110W) in the bottom row (second row). In other words, pixel 178 has subpixel 110R in the left column (first column), subpixel 110G in the center column (second column), subpixel 110B in the right column (third column), and subpixels 110W across these three columns.

[0366] The pixel 178 shown in FIG. 12H has three subpixels (subpixels 110R, 110G, and 110B) in the top row (first row) and three subpixels 110W in the bottom row (second row). In other words, the pixel 178 has subpixels 110R and 110W in the left column (first column), subpixels 110G and 110W in the center column (second column), and subpixels 110B and 110W in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 12H , it becomes possible to efficiently remove dust that may occur during the manufacturing process. Therefore, a light-emitting device with high display quality can be provided.

[0367] In the pixel 178 shown in FIGS. 12G and 12H, the subpixels 110R, 110G, and 110B are laid out in a stripe arrangement, which can improve the display quality.

[0368] FIG. 12I shows an example in which one pixel 178 is configured in three rows and two columns.

[0369] 12I has subpixel 110R in the top row (first row), subpixel 110G in the middle row (second row), subpixel 110B across rows 1 and 2, and one subpixel (subpixel 110W) in the bottom row (third row). In other words, pixel 178 has subpixels 110R and 110G in the left column (first column), subpixel 110B in the right column (second column), and subpixel 110W across these two columns.

[0370] In the pixel 178 shown in FIG. 12I, the layout of the subpixels 110R, 110G, and 110B is a so-called S-stripe arrangement, which can improve the display quality.

[0371] 12A to 12I is composed of four subpixels: subpixel 110R, subpixel 110G, subpixel 110B, and subpixel 110W. For example, subpixel 110R can be a subpixel that emits red light, subpixel 110G can be a subpixel that emits green light, subpixel 110B can be a subpixel that emits blue light, and subpixel 110W can be a subpixel that emits white light. Note that at least one of subpixels 110R, subpixel 110G, subpixel 110B, and subpixel 110W may be a subpixel that emits cyan light, magenta light, yellow light, or near-infrared light.

[0372] As described above, in the light-emitting device of one embodiment of the present invention, various layouts can be applied to pixels each including a subpixel having a light-emitting device.

[0373] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0374] Embodiment 5 In this embodiment, a light-emitting device according to one embodiment of the present invention will be described.

[0375] The light emitting device of the present embodiment can be a high-definition light emitting device, and therefore can be used, for example, in the display units of wristwatch-type and bracelet-type information terminals (wearable devices), as well as in the display units of head-mounted wearable devices such as VR devices such as head-mounted displays (HMDs), and eyeglass-type AR devices.

[0376] The light-emitting device of this embodiment can be a high-resolution light-emitting device or a large-sized light-emitting device. Therefore, the light-emitting device of this embodiment can be used in the display portion of electronic devices having relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0377] 13A shows a perspective view of a display module 280. The display module 280 has a light-emitting device 100A and an FPC 290. Note that the light-emitting device included in the display module 280 is not limited to the light-emitting device 100A, and may be either a light-emitting device 100B or a light-emitting device 100C, which will be described later.

[0378] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0379] 13B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0380] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 13B. The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 13B shows an example in which the pixel 284a has the same configuration as the pixel 178 shown in Fig. 3.

[0381] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0382] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This realizes an active matrix light-emitting device.

[0383] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0384] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0385] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby making it possible to extremely increase the aperture ratio (effective display area ratio) of the display unit 281. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, thereby extremely increasing the resolution of the display unit 281. For example, it is preferable that the pixels 284a are arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, but not more than 20000 ppi.

[0386] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even if the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0387] Light-Emitting Device 100A The light-emitting device 100A shown in FIG. 14A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0388] The substrate 301 corresponds to the substrate 291 in FIGS. 13A and 13B . The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0389] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0390] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0391] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0392] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0393] An insulating layer 255 is provided covering the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B are provided on the insulating layer 175. FIG. 14A shows an example in which the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B have the stacked structure shown in FIG. 6A. An insulator is provided in the region between adjacent light-emitting devices. For example, in FIG. 14A, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in this region.

[0394] Insulating layer 156R is provided to have a region overlapping with a side surface of conductive layer 151R of light-emitting device 130R, insulating layer 156G is provided to have a region overlapping with a side surface of conductive layer 151G of light-emitting device 130G, and insulating layer 156B is provided to have a region overlapping with a side surface of conductive layer 151B of light-emitting device 130B. Furthermore, conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R, conductive layer 152G is provided to cover conductive layer 151G and insulating layer 156G, and conductive layer 152B is provided to cover conductive layer 151B and insulating layer 156B. Furthermore, a sacrificial layer 158R is located on the organic compound layer 103R of the light-emitting device 130R, a sacrificial layer 158G is located on the organic compound layer 103G of the light-emitting device 130G, and a sacrificial layer 158B is located on the organic compound layer 103B of the light-emitting device 130B.

[0395] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and drain of the transistor 310 via an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 175 and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0396] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting device 130 to the substrate 120, refer to the second embodiment. The substrate 120 corresponds to the substrate 292 in FIG. 13A .

[0397] Fig. 14B is a modified example of the light-emitting device 100A shown in Fig. 14A. The light-emitting device shown in Fig. 14B has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area where it overlaps with one of the colored layers 132R, 132G, and 132B. In the light-emitting device shown in Fig. 14B, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0398] [Light Emitting Device 100B] FIG. 15 shows a perspective view of light emitting device 100B, and FIG. 16A shows a cross-sectional view of light emitting device 100B.

[0399] The light emitting device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 15, the substrate 352 is clearly indicated by a dashed line.

[0400] The light-emitting device 100B has a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, and the like. Fig. 15 shows an example in which an IC 354 and an FPC 353 are mounted on the light-emitting device 100B. Therefore, the configuration shown in Fig. 15 can also be called a display module having the light-emitting device 100B, an IC (integrated circuit), and an FPC. Here, a light-emitting device in which a connector such as an FPC is attached to a substrate, or a light-emitting device in which an IC is mounted on the substrate, is called a display module.

[0401] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 can be provided along one side or multiple sides of the pixel portion 177. The connection portion 140 may be single or multiple. FIG. 15 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0402] The circuit 356 can be, for example, a scanning line driver circuit.

[0403] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0404] 15 shows an example in which an IC 354 is provided on a substrate 351 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 354. The light-emitting device 100B and the display module may not necessarily include an IC. Alternatively, the IC may be mounted on an FPC by a COF method, for example.

[0405] Figure 16A shows an example of a cross section of the light-emitting device 100B, where a portion of the region including the FPC 353, a portion of the circuit 356, a portion of the pixel portion 177, a portion of the connection portion 140, and a portion of the region including the end portion are cut.

[0406] The light emitting device 100B shown in FIG. 16A has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light emitting device 130R that emits red light, a light emitting device 130G that emits green light, and a light emitting device 130B.

[0407] The light-emitting devices 130R, 130G, and 130B each have the same layer structure as shown in Fig. 6A except for the configuration of the pixel electrodes. For details of the light-emitting devices, see Embodiments 2 and 3.

[0408] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B. Here, conductive layer 224R, conductive layer 151R, and conductive layer 152R may be collectively referred to as the pixel electrode of light-emitting device 130R, and conductive layer 151R and conductive layer 152R excluding conductive layer 224R may be referred to as the pixel electrode of light-emitting device 130R. Similarly, conductive layer 224G, conductive layer 151G, and conductive layer 152G may be collectively referred to as the pixel electrode of light-emitting device 130G, and conductive layer 151G and conductive layer 152G excluding conductive layer 224G may be collectively referred to as the pixel electrode of light-emitting device 130G. Furthermore, conductive layer 224B, conductive layer 151B, and conductive layer 152B may be collectively referred to as the pixel electrode of light-emitting device 130B, and conductive layer 151B and conductive layer 152B excluding conductive layer 224B may be collectively referred to as the pixel electrode of light-emitting device 130B.

[0409] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with the side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0410] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0411] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. A layer 128 is buried in the recesses.

[0412] The layer 128 has a function of planarizing the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B. The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, which are electrically connected to the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, are provided on the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B and the layer 128. Therefore, the regions overlapping with the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0413] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and more preferably using an organic insulating material. For example, the organic insulating material that can be used for the insulating layer 127 described above can be used for the layer 128.

[0414] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 16A , the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0415] 16A shows an example in which connection portion 140 has conductive layer 224C obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B, conductive layer 151C obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B, and conductive layer 152C obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. Also, FIG. 16A shows an example in which insulating layer 156C is provided so as to have a region overlapping with a side surface of conductive layer 151C.

[0416] The light-emitting device 100B is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0417] The transistor 201 and the transistor 205 are both formed over a substrate 351. These transistors can be manufactured using the same material and through the same process.

[0418] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0419] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the light-emitting device.

[0420] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0421] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This prevents recesses from being formed in the insulating layer 214 during processing of the conductive layer 224R, conductive layer 151R, conductive layer 152R, etc. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 224R, conductive layer 151R, conductive layer 152R, etc.

[0422] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0423] The structure of the transistor included in the light-emitting device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0424] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0425] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0426] A semiconductor layer of the transistor preferably contains a metal oxide. That is, the light-emitting device of this embodiment preferably uses a transistor in which a channel formation region is formed using a metal oxide (hereinafter referred to as an OS transistor).

[0427] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0428] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0429] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as a source driver circuit) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the light-emitting device and reduces component and mounting costs.

[0430] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), and can retain charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a light-emitting device.

[0431] Furthermore, to increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0432] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of the light-emitting device vary. In other words, when an OS transistor operates in a saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0433] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0434] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0435] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0436] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include a composition in which In:M:Zn = 1:1:1 or thereabouts, a composition in which In:M:Zn = 1:1:1.2 or thereabouts, a composition in which In:M:Zn = 2:1:3 or thereabouts, a composition in which In:M:Zn = 3:1:2 or thereabouts, a composition in which In:M:Zn = 4:2:3 or thereabouts, a composition in which In:M:Zn = 4:2:4.1 or thereabouts, a composition in which In:M:Zn = 5:1:3 or thereabouts, a composition in which In:M:Zn = 5:1:6 or thereabouts, a composition in which In:M:Zn = 5:1:7 or thereabouts, a composition in which In:M:Zn = 5:1:8 or thereabouts, a composition in which In:M:Zn = 6:1:6 or thereabouts, and a composition in which In:M:Zn = 5:2:5 or thereabouts. The term "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0437] For example, when describing a composition having an atomic ratio of In:Ga:Zn = 4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0438] The transistors included in the circuit 356 and the transistors included in the pixel portion 177 may have the same structure or different structures. The transistors included in the circuit 356 may all have the same structure or may have two or more types. Similarly, the transistors included in the pixel portion 177 may all have the same structure or may have two or more types.

[0439] All the transistors included in the pixel portion 177 may be OS transistors, all the transistors included in the pixel portion 177 may be Si transistors, or some of the transistors included in the pixel portion 177 may be OS transistors and the rest may be Si transistors.

[0440] For example, by using both an LTPS transistor and an OS transistor in the pixel portion 177, a light-emitting device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. Note that, for example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling the conduction / non-conduction of a wiring, and to use an LTPS transistor as a transistor for controlling current.

[0441] For example, one of the transistors included in the pixel portion 177 functions as a transistor for controlling a current flowing through a light-emitting device and can be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0442] On the other hand, another transistor included in the pixel portion 177 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), thereby reducing power consumption by stopping the driver when displaying a still image.

[0443] As described above, the light-emitting device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0444] Note that a light-emitting device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current). Furthermore, with this structure, when an image is displayed on the light-emitting device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. Note that a structure in which leakage current that may flow through the transistor and lateral leakage current between light-emitting devices are extremely low can minimize light leakage during black display (so-called floating black).

[0445] In particular, among light-emitting devices with an MML structure, by applying the SBS structure described above, the layers provided between the light-emitting devices (for example, organic layers used in common between the light-emitting devices, also called common layers) are configured to be separated, so that side leakage can be eliminated or made extremely small.

[0446] 16B and 16C show other examples of transistor configurations.

[0447] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0448] 16B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0449] 16C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 16C . In FIG. 16C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0450] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a wiring 355 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0451] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. In addition, various optical members can be arranged on the outside of the substrate 352.

[0452] The substrate 351 and the substrate 352 can be made of the same material as can be used for the substrate 120 .

[0453] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0454] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0455] [Light Emitting Device 100H] The light emitting device 100H shown in FIG. 17 differs from the light emitting device 100A shown in FIG. 16 mainly in that it is a bottom emission type light emitting device.

[0456] Light emitted from the light-emitting device is emitted toward the substrate 351. A material that is highly transparent to visible light is preferably used for the substrate 351. On the other hand, the light-transmitting property of the material used for the substrate 352 does not matter.

[0457] A light-shielding layer 157 is preferably formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Figure 17 shows an example in which the light-shielding layer 157 is provided over the substrate 351, the insulating layer 153 is provided over the light-shielding layer 157, and the transistors 201, 205, and the like are provided over the insulating layer 153.

[0458] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0459] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0460] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are made of a material that is highly transparent to visible light. The common electrode 155 is preferably made of a material that reflects visible light.

[0461] Although the light emitting device 130G is not shown in FIG. 17, the light emitting device 130G is also provided.

[0462] Although FIG. 17 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0463] [Light Emitting Device 100C] The light emitting device 100C shown in FIG. 18A is a modification of the light emitting device 100B shown in FIG. 16A, and differs from the light emitting device 100B mainly in that it has colored layers 132R, 132G, and 132B.

[0464] In the light-emitting device 100C, the light-emitting device 130 has an area overlapping one of the colored layers 132R, 132G, and 132B. The colored layers 132R, 132G, and 132B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 132R, an end of the colored layer 132G, and an end of the colored layer 132B can overlap the light-shielding layer 157.

[0465] In the light-emitting device 100C, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. The light-emitting device 100C may be configured such that the colored layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.

[0466] 16A and 18A show examples in which the top surface of the layer 128 has a flat portion, but there are no particular limitations on the shape of the layer 128. Modified examples of the layer 128 are shown in Figures 18B to 18D.

[0467] As shown in FIGS. 18B and 18D, the upper surface of layer 128 can be configured to have a shape in which the center and its vicinity are recessed in cross section, that is, a shape having a concave curved surface.

[0468] As shown in FIG. 18C, the upper surface of layer 128 may have a shape in which the center and its vicinity bulge in cross section, that is, a shape having a convex curve.

[0469] The upper surface of layer 128 may have one or both of a convex curved surface and a concave curved surface. The number of convex curved surfaces and the number of concave curved surfaces that the upper surface of layer 128 has are not limited, and may be one or more.

[0470] Furthermore, the height of the upper surface of layer 128 and the height of the upper surface of conductive layer 224R may be the same or approximately the same, or may be different from each other. For example, the height of the upper surface of layer 128 may be lower or higher than the height of the upper surface of conductive layer 224R.

[0471] 18B can also be considered an example in which layer 128 is contained within a recess formed in conductive layer 224R. On the other hand, as shown in FIG. 18D, layer 128 may be present outside the recess formed in conductive layer 224R, that is, the width of the top surface of layer 128 may be wider than the recess.

[0472] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0473] Embodiment 6 In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0474] The electronic devices of this embodiment include the light-emitting device of one embodiment of the present invention in their display portions. The light-emitting device of one embodiment of the present invention is highly reliable and can easily achieve high definition and high resolution. Therefore, the light-emitting device can be used in the display portions of various electronic devices.

[0475] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0476] In particular, the light-emitting device of one embodiment of the present invention can have high resolution and thus can be suitably used in electronic devices having a relatively small display portion. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0477] The light-emitting device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. The screen ratio (aspect ratio) of the light-emitting device of one embodiment of the present invention is not particularly limited. For example, the light-emitting device can accommodate various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0478] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, and a function to read out programs or data recorded on a recording medium.

[0479] 19A to 19D , examples of wearable devices that can be worn on the head are described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device with the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the sense of immersion felt by the user.

[0480] The electronic device 700A shown in FIG. 19A and the electronic device 700B shown in FIG. 19B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0481] The light-emitting device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0482] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0483] The electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, the electronic device 700A and the electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in the display area 756.

[0484] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0485] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or wired.

[0486] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module detects a tap operation, a slide operation, or the like by the user and can perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0487] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0488] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving element. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0489] The electronic device 800A shown in Figure 19C and the electronic device 800B shown in Figure 19D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0490] The light-emitting device of one embodiment of the present invention can be applied to the display portion 820 .

[0491] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0492] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0493] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0494] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. Note that, for example, in Fig. 19C, the mounting unit 823 is shaped like the temples of glasses, but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0495] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0496] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0497] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0498] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0499] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 includes a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, an electronic device 700A shown in FIG. 19A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, an electronic device 800A shown in FIG. 19C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0500] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 19B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0501] Similarly, electronic device 800B shown in Fig. 19D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0502] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0503] As described above, as electronic devices according to one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0504] Furthermore, the electronic device according to one embodiment of the present invention can transmit information to the earphone via a wired or wireless connection.

[0505] The electronic device 6500 shown in FIG. 20A is a portable information terminal that can be used as a smartphone.

[0506] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0507] The light-emitting device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can have high reliability.

[0508] FIG. 20B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0509] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0510] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0511] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0512] The organic compound of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0513] 20C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7171. Here, the housing 7171 is supported by a stand 7173.

[0514] The light-emitting device of one embodiment of the present invention can be applied to the display portion 7000 .

[0515] 20C can be operated using operation switches provided on the housing 7171 and a separate remote control 7151. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7151 may have a display portion that displays information output from the remote control 7151. Channels and volume can be controlled by operation keys or a touch panel provided on the remote control 7151, and an image displayed on the display portion 7000 can be controlled.

[0516] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0517] 20D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0518] The light-emitting device of one embodiment of the present invention can be applied to the display portion 7000 .

[0519] 20E and 20F show an example of digital signage.

[0520] 20E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0521] 20F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0522] 20E and 20F, the light-emitting device of one embodiment of the present invention can be applied to the display portion 7000.

[0523] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0524] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0525] 20E and 20F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0526] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0527] The electronic device shown in Figures 21A to 21G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0528] The electronic devices shown in Figures 21A to 21G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0529] The electronic devices shown in FIGS. 21A to 21G will be described in detail below.

[0530] FIG. 21A is a perspective view showing a mobile information terminal 9171. The mobile information terminal 9171 can be used as, for example, a smartphone. Note that the mobile information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9171 can display text and image information on multiple surfaces. FIG. 21A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0531] 21B is a perspective view showing a mobile information terminal 9172. The mobile information terminal 9172 has a function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9172 while storing the mobile information terminal 9172 in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9172 out of the pocket and decide, for example, whether to answer a call.

[0532] 21C is a perspective view showing a tablet terminal 9173. The tablet terminal 9173 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9173 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0533] FIG. 21D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a wirelessly capable headset. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0534] 21E to 21G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 21E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 21G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 21F is a perspective view of a state in the process of changing from one of FIG. 21E and FIG. 21G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0535] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0536] Example 1 Synthesis of an Organic Compound in One Embodiment of the Present Invention. Specifically, a synthesis method for 2,4-diphenyl-spiro[2,4-diaza-1,3,5(2,6)-tripyridinacyclohexaphane-6,9'-9H-fluorene] (abbreviation: Sfchp) represented by structural formula (100) in Embodiment 1 is described. The structure of Sfchp is shown below.

[0537]

[0538] Step 1: Synthesis of 2,2'-(9H-fluoren-9-ylidene)bis(6-bromopyridine) 10 g (60 mmol) of 9H-fluorene, 29 g (122 mmol) of 2,6-dibromopyridine, and 20 g (178 mmol) of potassium tert-butoxide (abbreviated as KOtBu) were added to a 1 L three-neck flask, and the atmosphere in the flask was replaced with nitrogen. 500 mL of toluene was added to the mixture, and the mixture was degassed under reduced pressure. 5.0 mL (3.0 mmol) of tricyclohexylphosphine (0.6 M toluene solution) (abbreviated as P(Cy)) was then added to the mixture. ３ ) and 0.70 g (1.2 mmol) of bis(dibenzylideneacetone)palladium(0) (abbreviation: Pd(dba) ２ ) was added, and the mixture was stirred at 110° C. for 3 hours under a nitrogen stream.

[0539] After stirring, 500 mL of toluene was added to the mixture, and the mixture was then suction filtered through a filter aid consisting of Florisil (Fujifilm Wako Pure Chemical Industries, Ltd., catalog number: 066-05265), Celite (Fujifilm Wako Pure Chemical Industries, Ltd., catalog number: 537-02305), and alumina layered in this order to obtain a filtrate. The obtained filtrate was concentrated to obtain a solid.

[0540] The oily substance obtained was purified by silica gel column chromatography and further purified by high performance liquid chromatography (HPLC), yielding 2.5 g of the target white solid in a yield of 8.8%. The synthesis scheme of Step 1 is shown in (a-1) below.

[0541]

[0542] The obtained white solid was dissolved in deuterated chloroform (abbreviation: CDCl ３ ) solution １ The H NMR spectrum is shown in Figures 22A and 22B. １ The results of the H NMR measurement are shown below: From these results, it was found that 2,2′-(9H-fluoren-9-ylidene)bis(6-bromopyridine) was obtained.

[0543] １ H NMR (CDCl ３, 300MHz): σ = 7.91 (m, 2H), 7.78 (m, 2H), 7.46 (m, 8H), 6.99 (dd, J = 2.4Hz, 5.7Hz, 2H).

[0544] <Step 2: Synthesis of Sfchp> 0.63 g (1.3 mmol) of 2,2′-(9H-fluoren-9-ylidene)bis[6-bromopyridine] and 0.35 g (1.3 mmol) of N ２ , N ６ -diphenyl-2,6-pyridinediamine and 2.1 g (15 mmol) of potassium carbonate (abbreviation: K ２ CO ３ ) was added to a 200 mL recovery flask, and the atmosphere in the flask was replaced with nitrogen. 15 mL of nitrobenzene was added to this mixture, and after degassing under reduced pressure, 0.22 g (1.5 mmol) of copper(I) bromide (abbreviation: CuBr) was added to this mixture, and the mixture was stirred at 240°C for 6 hours under an argon stream.

[0545] After stirring, toluene was added to the mixture, and the mixture was filtered off by suction filtration. The filtrate was concentrated to give a brown oil.

[0546] The resulting oil was purified by flash column chromatography (ISOLERA One, manufactured by Biotage Japan, Inc.). The resulting solid was dissolved in chloroform, and then a 10 wt % aqueous solution of sodium hydroxide was added, followed by extraction with chloroform. The resulting extract was concentrated to obtain a solid. Ethyl acetate was added to this solid, and the mixture was irradiated with ultrasound, yielding 0.23 g of the target white solid in a yield of 30%. The synthesis scheme is shown in (a-2) below.

[0547]

[0548] The obtained white solid was dissolved in deuterated chloroform (abbreviation: CDCl ３ ) solution １ The H NMR spectrum is shown in Figure 23. １ The measurement results by H NMR are shown below. From these results, it was found that Sfchp was obtained.

[0549] １ H NMR (CDCl ３, 300MHz): σ = 8.24 (d, J = 7.5Hz, 2H), 7.80 (d, J = 7.2Hz, 2H), 7.54 (m , 14H), 7.24 (m, 5H), 6.51 (d, J=8.1Hz, 2H), 6.43 (d, J=8.1Hz, 2H).

[0550] Furthermore, 0.75 g of the obtained white solid was purified by train sublimation. The sublimation purification was carried out by heating the white solid at 260° C. for 15 hours under a pressure of 2.9 Pa. After the sublimation purification, 0.56 g of the target white solid was obtained with a recovery rate of 75%.

[0551] <Sfchp's T ｇ Measurement of the glass transition temperature (Tg) of Sfchp was measured. ｇ The measurement was carried out using a differential scanning calorimeter (DSC8500 manufactured by PerkinElmer Japan Co., Ltd.) by placing the powder on an aluminum cell and raising the temperature at a rate of 40°C / min. As a result, Sfchp has a low sublimation temperature and can be vapor-deposited. ｇ The heat resistance was 180°C, and it was found to have good heat resistance.

[0552] <Measurement of UV-Visible Absorption and PL Spectra of Sfchp Thin Film> The UV-visible absorption spectrum and PL spectrum of the Sfchp thin film will be described with reference to FIG.

[0553] FIG. 24 is a diagram illustrating the wavelength dependence of absorption intensity and the wavelength dependence of emission intensity.

[0554] The UV-visible absorption spectrum of the Sfchp thin film had a peak absorption intensity around 365 nm (see Figure 24). This wavelength is sufficiently shorter than the emission wavelength of the luminescent materials used in displays. This indicates that the luminescent efficiency is not likely to decrease due to absorption at the wavelengths used in displays, making it suitable for use. Furthermore, the emission spectrum had a peak emission intensity around 395 nm. Note that light with a wavelength of 325 nm was used as the excitation light.

[0555] The ultraviolet-visible absorption spectrum was measured using an ultraviolet-visible spectrophotometer (U-4100 manufactured by Hitachi, Ltd.), and the emission spectrum was measured using a spectrofluorometer (FP-8600DS manufactured by JASCO Corporation).

[0556] The UV-visible absorption and PL spectra of the thin film were measured by depositing Sfchp on a quartz substrate by vacuum deposition and sealing it with a quartz substrate as the opposing substrate. The PL spectrum was measured on the sealed sample, while the absorption spectrum was measured on the sample after removing the sealing and the opposing substrate. The absorption spectrum was obtained by subtracting the absorption spectrum of the quartz substrate from the absorption spectrum of Sfchp deposited on the quartz substrate.

[0557] In this example, a light-emitting device 1 was fabricated using the Sfchp obtained in Example 1 as an intermediate layer, and the device characteristics will be described. The light-emitting device 1 was fabricated using a fabrication method (a so-called integrated vacuum process) that does not involve an atmospheric exposure step or a photolithography process to process the organic compound layer. The structural formula of the organic compound used in the light-emitting device 1 is shown below.

[0558]

[0559] As shown in Figure 25, the light-emitting device 1 has a tandem structure in which a first EL layer 903, an intermediate layer 905, a second EL layer 904, and a second electrode 902 are stacked on a first electrode 901 formed on a substrate 900, which is a glass substrate.

[0560] The first EL layer 903 has a structure in which a hole injection layer 910, a first hole transport layer 911, a first light-emitting layer 912, and a first electron transport layer 913 are sequentially stacked. The intermediate layer 905 has an electron injection buffer region 914 and a layer 915 including an electron relay region and a charge generation region. The second EL layer 904 has a structure in which a second hole transport layer 916, a second light-emitting layer 917, a second electron transport layer 918, and an electron injection layer 919 are sequentially stacked.

[0561] (Method of Fabricating Light-Emitting Device 1) First, a silver (Ag) film was formed on a glass substrate by sputtering to a thickness of 100 nm as a reflective electrode, and then an indium tin oxide containing silicon oxide (ITSO) film was formed on a glass substrate by sputtering to a thickness of 85 nm as a transparent electrode, forming a first electrode. The electrode area was 4 mm ２ The transparent electrode functions as an anode, and can be regarded as a first electrode together with the reflective electrode.

[0562] Next, as a pretreatment for forming the light-emitting device 1 on the substrate, the surface of the substrate was washed with water and baked at 200° C. for 1 hour.

[0563] Then, 1 x 10 −４ The substrate was placed in a vacuum deposition apparatus whose interior had been reduced in pressure to about Pa, and was subjected to a heat treatment at 170° C. for 30 minutes in a heating chamber of the vacuum deposition apparatus, after which the substrate was allowed to cool for about 30 minutes.

[0564] Next, the substrate was fixed to a holder provided in a vacuum deposition apparatus so that the surface on which the first electrode was formed faced downward. A hole-injection layer was formed on the first electrode by co-depositing N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) and a fluorine-containing electron acceptor material (OCHD-003) having a molecular weight of 672 by a deposition method in a weight ratio of 1:0.03 (= PCBBiF:OCHD-003) and a film thickness of 10 nm.

[0565] On the hole injection layer, PCBBiF was evaporated to a thickness of 90 nm to form a first hole transport layer.

[0566] Subsequently, 8-(1,1':4',1''-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCCP), and [2-d ３-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d ３ [5-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d ３ ) ２ (mbfpypy-d ３ )) in a weight ratio of 0.5:0.5:0.1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d ３ ) ２ (mbfpypy-d ３ )) and to a film thickness of 40 nm, to form a first light-emitting layer.

[0567] Next, 2-{3-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviation: 2mPCCzPDBq) was evaporated to a thickness of 10 nm to form a first electron-transporting layer.

[0568] After the first electron-transport layer is formed, a mixture of Sfchp, which is an organic compound of one embodiment of the present invention, and lithium oxide (Li ２ O) in a volume ratio of 1.0:0.02 (=Sfchp:Li ２ O) and to a film thickness of 5 nm, to form a first layer of the intermediate layer.

[0569] Next, a copper phthalocyanine (abbreviation: CuPc) film was formed to a thickness of 2 nm to form a third intermediate layer.

[0570] Furthermore, a second intermediate layer was formed by co-depositing PCBBiF and OCHD-003 at a weight ratio of 1:0.15 (=PCBBiF:OCHD-003) to a film thickness of 10 nm.

[0571] Next, PCBBiF was vapor-deposited on the intermediate layer to a thickness of 55 nm to form a second hole transport layer.

[0572] On the second hole transport layer, 8mpTP-4mDBtPBfpm, βNCCP, and Ir(5mppy-d ３ ) ２(mbfpypy-d ３ ) in a weight ratio of 0.5:0.5:0.1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d ３ ) ２ (mbfpypy-d ３ ) and a film thickness of 40 nm to form a second light-emitting layer.

[0573] Thereafter, 2mPCCzPDBq was deposited to a thickness of 20 nm, and then 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) was deposited to a thickness of 20 nm to form a second electron transport layer.

[0574] Thereafter, an electron injection layer was formed on the second electron transport layer by co-evaporating lithium fluoride (LiF) and ytterbium (Yb) at a volume ratio of 1:0.5 (=LiF:Yb) and a film thickness of 1.5 nm. Finally, a second electrode was formed by co-evaporating silver (Ag) and magnesium (Mg) at a volume ratio of 1:0.1 and a film thickness of 15 nm, thereby producing light-emitting device 1.

[0575] The second electrode is a semi-transparent / semi-reflective electrode that has the functions of reflecting and transmitting light, and the light-emitting device of this example is a top-emission tandem light-emitting device in which light is extracted from the second electrode. Furthermore, a cap layer of 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) was vapor-deposited on the second electrode to a thickness of 70 nm to improve the extraction efficiency.

[0576] The device structure of the light-emitting device 1 is summarized in the following table.

[0577]

[0578] In this way, the light-emitting device 1 was fabricated.

[0579] <Device Characteristics> The light-emitting devices 1 were sealed with glass substrates in a glove box with a nitrogen atmosphere so that each device would not be exposed to the atmosphere (a sealant was applied around the elements, and UV treatment and heat treatment at 80°C for 1 hour were performed during sealing), and then the light-emitting characteristics of the light-emitting devices 1 were measured.

[0580] The luminance-current density characteristics of the light-emitting device 1 are shown in Fig. 26, the luminance-voltage characteristics in Fig. 27, the current efficiency-current density characteristics in Fig. 28, the current density-voltage characteristics in Fig. 29, the power efficiency-current density characteristics in Fig. 30, the external quantum efficiency-current density characteristics in Fig. 31, and the electroluminescence spectrum in Fig. 32. In addition, when the luminance of the light-emitting device 1 reached 1000 cd / cm ２ The main characteristics in the vicinity are shown in the table below. Note that a spectroradiometer (SR-UL1R, manufactured by Topcon Corporation) was used to measure the luminance, CIE chromaticity, and electroluminescence spectrum.

[0581]

[0582] 26 to 31 and Table 2, light-emitting device 1 exhibited good chromaticity and high current efficiency. Therefore, it can be said that the device functions as a tandem device, emitting light from the first and second light-emitting layers.

[0583] Furthermore, as shown in FIG. 32, the light emitting device 1 exhibited green light emission with a peak wavelength of about 542 nm in the electroluminescence spectrum.

[0584] From the above, it was found that the organic compound of one embodiment of the present invention is suitable for an intermediate layer in a tandem light-emitting device, and that a light-emitting device using the organic compound of one embodiment of the present invention exhibits favorable characteristics.

[0585] Example 1 In this example, physical properties and a synthesis method of an organic compound according to one embodiment of the present invention will be described. Specifically, a synthesis method of 2,4-diphenyl-34-(1-pyrrolidinyl)spiro[2,4-diaza-1,3,5(2,6)-tripyridinacyclohexaphane-6,9'-9H-fluorene] (abbreviation: PrdSfchp), which is represented by structural formula (101) in Embodiment 1, will be described. The structure of PrdSfchp is shown below.

[0586]

[0587] Step 1: 4-(1-pyrrolidinyl)-N ２ , N ６ Synthesis of diphenyl-2,6-pyridinediamine: 3.0 g (9.8 mmol) of 2,6-dibromo-4-(1-pyrrolidinyl)pyridine, 1.9 g (20 mmol) of aniline, and 2.9 g (30 mmol) of sodium tert-butoxide (NaOtBu) were added to a 200 mL three-neck flask, and the atmosphere in the flask was replaced with nitrogen. 50 mL of toluene was added to the mixture, and the mixture was degassed under reduced pressure. 0.12 g (0.21 mmol) of 4,5-bis(diphenylphosphino)-9,9-dimethylxanthene (Xantphos) and 90 mg (98 μmol) of tris(dibenzylideneacetone)dipalladium(0) (Pd ２ (dba) ３ ) was added, and the mixture was stirred at 100° C. for 7 hours under a nitrogen stream.

[0588] After stirring, 300 mL of toluene was added to the obtained solid, and the mixture was then suction-filtered through Celite (Fujifilm Wako Pure Chemical Industries, Ltd., catalog number: 537-02305) to obtain a filtrate. Water was added to the obtained filtrate, and the aqueous layer was extracted with toluene. The obtained extract was concentrated to obtain a brown oil.

[0589] The oily substance obtained was purified by silica gel column chromatography to obtain 2.8 g of a gray solid, which was the target compound, in a yield of 86%. The synthesis scheme is shown in (b-1) below.

[0590]

[0591] The resulting gray solid was dissolved in deuterated chloroform (abbreviation: CDCl ３ ) solution １ The H NMR spectrum is shown in Figures 33A and 33B. １ The results of measurement by H NMR are shown below. From these results, it is clear that 4-(1-pyrrolidinyl)-N ２ , N ６ It was found that 2,6-diphenyl-2,6-pyridinediamine was obtained.

[0592] １ H NMR (CDCl ３ , 300MHz): σ = 7.33 (m, 8H), 7.01 (m, 2H), 6.20 (bs, 2H), 5.65 (s, 2H), 3.27 (m, 4H), 1.98 (m, 4H).

[0593] <Step 2: Synthesis of PrdSfchp> 2.5 g (5.3 mmol) of 2,2′-(9H-fluoren-9-ylidene)bis[6-bromopyridine] and 1.8 g (5.4 mmol) of 4-(1-pyrrolidinyl)-N ２ , N ６ 1,2-Diphenyl-2,6-pyridinediamine and 8.6 g (62 mmol) of potassium carbonate were added to a 500 mL three-necked flask, and the atmosphere in the flask was replaced with nitrogen. 60 mL of nitrobenzene was added to the mixture, and the mixture was degassed under reduced pressure. 0.90 g (6.3 mmol) of copper(I) bromide was added to the mixture, and the mixture was stirred at 240° C. for 5 hours under an argon stream.

[0594] After stirring, toluene was added to the mixture, and the mixture was filtered off by suction filtration. The filtrate was concentrated to give a brown oil.

[0595] The oily substance obtained was purified by silica gel column chromatography. The resulting solid was dissolved in dichloromethane, and then a 16 wt% aqueous solution of sodium hydroxide was added. Extraction with dichloromethane was performed. The resulting extract was concentrated to obtain a solid. Ethyl acetate and hexane were added to this solid, and the mixture was subjected to ultrasonic irradiation to obtain 0.34 g of the target white solid in a yield of 10%. The synthesis scheme is shown in (b-2) below.

[0596]

[0597] <Characteristics of Organic Compound> The white solid chloroform-d (abbreviation: CDCl) obtained in Step 2 above ３ ) solution １ The 1 H NMR spectrum is shown in Figure 34. １ The measurement results by H NMR are shown below. From these results, it was found that PrdSfchp was obtained.

[0598] １H NMR(CDCl ３ ,300MHz):σ=7.60(d,J=7.2Hz,2H),7.39(m,6H),7.25(m,8H),7.07(m,4H),6.93(m,2H),6.60(d,J=7.5Hz,2H),5.60(s,2H),3.08(m,4H),1.90(m,4H).

[0599] 100A: light-emitting device, 100B: light-emitting device, 100C: light-emitting device, 100H: light-emitting device, 101a: first electrode, 101b: first electrode, 101: first electrode, 102: second electrode, 103a: organic compound layer, 103B: organic compound layer, 103b: organic compound layer, 103Bf: organic compound film, 103G: organic compound layer, 103Gf: organic compound film, 103R: organic compound layer, 103Rf: organic compound film, 103: organic compound layer, 104: common layer, 110B: sub-pixel, 110G: sub-pixel, 110R: sub-pixel, 110W: sub-pixel, 110: sub-pixel, 111a: positive Hole injection layer, 111b: hole injection layer, 111: hole injection layer, 112_1: first hole transport layer, 112_2: second hole transport layer, 112a_1: first hole transport layer, 112a_2: second hole transport layer, 112B: conductive layer, 112b_1: first hole transport layer, 112b_2: second hole transport layer, 112R: conductive layer, 112: hole transport layer, 113_1: first light-emitting layer, 113_2: second light-emitting layer, 113a_1: first light-emitting layer, 113a_2: second light-emitting layer, 113b_1: first light-emitting layer, 113b_2: second light-emitting layer, 113: light-emitting layer, 114_1: first electron transport layer transport layer, 114_2: second electron transport layer, 114a_1: first electron transport layer, 114a_2: second electron transport layer, 114b_1: first electron transport layer, 114b_2: second electron transport layer, 114: electron transport layer, 115: electron injection layer, 116_1: first intermediate layer, 116_2: second intermediate layer, 116a: intermediate layer, 116b: intermediate layer, 116: intermediate layer, 117a: P-type layer, 117b: P-type layer, 117: P-type layer, 118a: electron relay layer, 118b: electron relay layer, 118: electron relay layer, 119a: N-type layer, 119b: N-type layer, 119: N-type layer, 120: substrate, 12 2: resin layer, 124a: pixel, 124b: pixel, 125f: inorganic insulating film, 125: inorganic insulating layer, 126B: conductive layer, 126R: conductive layer, 127a: insulating layer, 127f: insulating film, 127: insulating layer, 128: layer, 129B: conductive layer, 129R: conductive layer, 130a: light-emitting device, 130B: light-emitting device, 130b: light-emitting device, 130G: light-emitting device, 130R: light-emitting device, 130: light-emitting device, 131: protective layer, 132B: colored layer, 132G: colored layer, 132R: colored layer, 140: connection portion, 141: region, 142: adhesive layer, 151_1: conductive layer,151_2: conductive layer, 151_3: conductive layer, 151B: conductive layer, 151C: conductive layer, 151f: conductive film, 151G: conductive layer, 151R: conductive layer, 151: conductive layer, 152_1: conductive layer, 152_2: conductive layer, 152_3: conductive layer, 152B: conductive layer, 152C: conductive layer, 152f: conductive film, 152G: conductive layer, 152R: conductive layer, 152: conductive layer, 153: insulating layer, 155: common electrode, 156B: insulating layer, 156C: insulating layer, 156f: insulating film, 156G: insulating layer, 156R: insulating layer, 156: insulating layer, 157: light-shielding layer, 158B: sacrificial layer, 158Bf: Sacrificial film, 158G: sacrificial layer, 158Gf: sacrificial film, 158R: sacrificial layer, 158Rf: sacrificial film, 158: sacrificial layer, 159B: mask layer, 159Bf: mask film, 159G: mask layer, 159Gf: mask film, 159R: mask layer, 159Rf: mask film, 166: conductive layer, 171: insulating layer, 172: conductive layer, 173: insulating layer, 174: insulating layer, 175: insulating layer, 176: plug, 177: pixel portion, 178: pixel, 179: conductive layer, 190B: resist mask, 190G: resist mask, 191: resist mask, 201: transistor, 204: connection portion, 2 05: transistor, 209: transistor, 210: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 224B: conductive layer, 224C: conductive layer, 224G: conductive layer, 224R: conductive layer, 225: insulating layer, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 254: insulating layer, 255: insulating layer, 256: plug, 261 : insulating layer, 271: plug, 280: display module, 281: display section, 282: circuit section, 283a: pixel circuit, 283: pixel circuit section, 284a: pixel, 284: pixel section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301: substrate, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 351: substrate, 352: substrate, 353: FPC, 354: IC, 355: wiring, 356: circuit, 501a: first light-emitting unit, 501b: first light-emitting unit,501: first light-emitting unit, 502a: second light-emitting unit, 502b: second light-emitting unit, 502: second light-emitting unit, 503: third light-emitting unit, 700A: electronic device, 700B: electronic device, 721: housing, 723: wearing section, 727: earphone section, 750: earphone, 751: display panel, 753: optical member, 756: display area, 757: frame, 758: nose pad, 800A: electronic device, 800B: electronic device, 820: display section, 821: housing, 822: communication section, 823: wearing section, 824: control section, 825: imaging section, 827: earphone part, 832: lens, 900: substrate, 901: first electrode, 902: second electrode, 903: first EL layer, 904: second EL layer, 905: intermediate layer, 910: hole injection layer, 911: first hole transport layer, 912: first light-emitting layer, 913: first electron transport layer, 914: electron injection buffer region, 915: layer, 916: second hole transport layer, 917: second light-emitting layer, 918: second electron transport layer, 919: electron injection layer, 1000: light-emitting device, 6500: electronic device, 6501: housing, 6502: display part, 6503: power button, 6504: button, 6505: speaker, 6 506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display unit, 7100: television device, 7151: remote control device, 7171: housing, 7173: stand, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7 301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9171: Portable information terminal, 9172: Portable information terminal, 9173: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

An organic compound represented by general formula (G1): (In the above general formula (G1), X １ , X ２ , and X ３ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur, and at least one is carbon or silicon. １ , X ２ , and X ３ When any of X is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and each of X independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. １ , X ２ , and X ３ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R ９ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. An organic compound represented by general formula (G2): (In the above general formula (G2), X １ , and X ２ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur; X １ and X ２ When R is carbon, nitrogen, or silicon, it has hydrogen (including deuterium) or a substituent, and each of the substituents independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. １ ~R １７ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. An organic compound represented by general formula (G3): (In the above general formula (G3), X ４ represents carbon or silicon, and X ４ has hydrogen (including deuterium) or a substituent, and each independently has one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, or an aliphatic amine group having 1 to 30 carbon atoms. ４ may form a spiro ring with R as the spiro atom. １ ~R １９ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. An organic compound represented by general formula (G4): (In the above general formula (G4), R １ ~R ２７ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. 　 An organic compound represented by structural formula (100). An organic compound represented by structural formula (101). a first electrode, a second electrode, a first organic compound layer, an intermediate layer, and a second organic compound layer; the first electrode is positioned to face the second electrode with the intermediate layer interposed therebetween; the first organic compound layer is located between the first electrode and the intermediate layer, the second organic compound layer is located between the intermediate layer and the second electrode, The intermediate layer comprises an organic compound represented by the following general formula (G1): (X １ , X ２ , and X ３ each independently represents one of carbon, nitrogen, oxygen, silicon, and sulfur, and X １ , X ２ , and X ３ At least one of X is carbon or silicon. １ , X ２ , and X ３ When any of X is nitrogen or silicon, it has hydrogen (including deuterium) or a substituent, and the substituent each independently has any one of an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. １ , X ２ , and X ３ When any of R is carbon or silicon, the atom may form a spiro ring with the atom as the spiro atom. １ ~R ９ represents any one of hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a silyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, a cyano group, and an aliphatic amine group having 1 to 30 carbon atoms. 　 In claim 7, The first organic compound layer and the second organic compound layer each have a light-emitting layer.

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