Electromagnetic-radiation emitting modules for a hollow-body treatment unit
The anti-reflective coating on the transparent window in the transmitter module addresses Fresnel reflection issues, improving energy transfer and component lifespan in thermoplastic processing units by minimizing radiation reflection and ensuring uniform heating.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-09-23
- Publication Date
- 2026-04-02
AI Technical Summary
Existing transmitter modules in thermoplastic hollow body processing units suffer from Fresnel reflection of electromagnetic radiation, leading to inefficient energy transfer and potential damage to semiconductor components due to reflected radiation, resulting in reduced efficiency and lifespan.
The module incorporates a transparent window with an anti-reflective coating on at least one face, preferably both, to minimize reflection of electromagnetic radiation, using a coating thickness equal to a quarter of the wavelength and a refractive index matching the square root of the product of air and glass indices, made of materials like optical glass, quartz, or sapphire, to protect semiconductor components.
Enhances energy transfer efficiency and extends the lifespan of semiconductor components by reducing reflection and ensuring homogeneous heating of preforms.
Smart Images

Figure EP2025077186_02042026_PF_FP_ABST
Abstract
Description
ELECTROMAGNETIC RADIATION EMITTING MODULES FOR A HOLLOW BODY PROCESSING UNIT Technical field of the invention
[0001] The invention relates to a transmitter module for a thermoplastic hollow body processing unit belonging to a container production installation by preforming, the transmitter module comprising:
[0002] - a main body presenting a front face;
[0003] - a set of emitting semiconductor components mounted on the front face of the main body, each of which is capable of selectively emitting electromagnetic processing radiation with a determined wavelength emission peak;
[0004] - at least one transparent front window which is mounted on the front face of the main body to hermetically seal the assembly of emitting semiconductor components, the window being intended to be traversed by the electromagnetic processing radiation. Technical background
[0005] It is known to manufacture containers by forming, particularly by stretch blow molding, preforms made of thermoplastic material. The material forming the preforms is generally in an amorphous state that is not suitable for cold forming. Prior to the forming operation, the preforms are therefore heated to a temperature equal to or greater than their glass transition temperature, which allows them to be shaped into the final container.
[0006] More specifically, preforms generally have a substantially cylindrical body of revolution with thick tubular walls, closed at one of its axial ends by a thick-walled base, and extended at its other end by a neck, also tubular. The neck is formed to its final shape and dimensions, while the body of the preform is intended to undergo relatively significant deformation to form it into a container during a forming step.
[0007] For this reason, it is preferable that only the body of the preform be heated above the glass transition temperature, with the neck remaining at a temperature below said glass transition temperature to avoid deformation during container manufacturing.
[0008] The mass production of containers is carried out in a production facility which includes several processing units.
[0009] It includes a heat conditioning unit which, during a heating step, makes the preform body malleable by heating it above the glass transition temperature. During the heating step, each preform is transported along a heating zone exposed to radiant heat. The heat conditioning units are generally equipped with at least one processing cavity containing emitting semiconductor components capable of emitting electromagnetic heat, allowing the preforms to be heated more precisely, economically, and with a smaller footprint than incandescent lamps. Examples of such emitting semiconductor components are laser diodes.
[0010] The production plant also includes a forming unit, which is arranged downstream of the heat conditioning unit according to the direction of preform flow within the production plant. During the forming stage, the hot preform is placed in a forming station, for example, in a mold within the forming station that has a molding impression corresponding to the desired container. A pressurized fluid, such as air, is then injected into the malleable body of the preform to press its wall against the mold impression. Generally, the injection of pressurized fluid is preceded and / or accompanied by axial stretching of the preform, notably by means of a stretching rod inserted into the preform. As is known, the body is thus subjected to biaxial stretching.
[0011] The semiconductor emitter components are advantageously mounted in emitter modules, each forming a self-contained unit that is easily handled. The semiconductor emitter components are arranged on the front face of the main body of the emitter module, which is designed to face the processing cavity.
[0012] The emitting semiconductor components are fragile and must be protected from dust and moisture. Therefore, they are designed to be hermetically sealed behind a transparent glass panel that is impervious to the electromagnetic radiation used in the processing.
[0013] However, it has been observed that such a glass tends to reflect some of the processing electromagnetic radiation directly back towards the emitting semiconductor components. This is primarily due to a phenomenon called "Fresnel reflection." This phenomenon results from the combination of the change in refractive index between the air and the glass, and the fact that the processing electromagnetic radiation is emitted divergently by each emitting semiconductor component in a conical beam. Thus, some emitted rays strike an inner surface of the glass at an angle greater than a critical angle, beyond which the rays are reflected.
[0014] This raises an initial problem regarding the efficiency of the transmitter module. Indeed, it has been experimentally determined that approximately 10% of the energy emitted in the form of electromagnetic radiation for processing does not reach the processing cavity.
[0015] Furthermore, it was observed that the reflection of some of the electromagnetic processing radiation influenced the spatial distribution of the electromagnetic processing radiation in the cavity, particularly at the level of the preforms, so that the preforms are not heated in a perfectly homogeneous manner.
[0016] Furthermore, the reflected electromagnetic radiation from the processing is very intense. However, a portion of this electromagnetic radiation can re-enter the emitting semiconductor components. These emitting semiconductor components, thus exposed to this return of high-intensity electromagnetic radiation, risk being gradually damaged. The reflection of some of the electromagnetic radiation from the processing therefore contributes to reducing the lifespan of the emitting semiconductor components, particularly in the case of laser diodes.
[0017] Therefore, there is a need to protect the emitting semiconductor components while improving the efficiency of the processing unit.
[0018] The invention provides a transmitter module for a thermoplastic hollow body processing unit belonging to a container production installation by preforming, the transmitter module comprising:
[0019] - a main body presenting a front face;
[0020] - a set of emitting semiconductor components mounted on the front face of the main body, each of which is capable of selectively emitting electromagnetic processing radiation with a determined wavelength emission peak;
[0021] - at least one transparent front window which is mounted on the front face of the main body to hermetically seal the assembly of emitting semiconductor components, the window being intended to be traversed by the electromagnetic processing radiation;
[0022] characterized in that at least one face of the glass is covered with an anti-reflective coating at least for the wavelengths corresponding to the peak emission of the electromagnetic processing radiation.
[0023] According to another feature of the transmitter module made according to the teachings of the invention, at least the inner face of the glass, which is turned towards the set of transmitter semiconductor components, is covered with the anti-reflective coating.
[0024] According to another feature of the transmitter module made according to the teachings of the invention, both sides of the glass are covered with the anti-reflective coating.
[0025] According to another feature of the transmitter module made according to the teachings of the invention, the anti-reflective coating has a thickness substantially equal to one quarter of the wavelength of the emission peak.
[0026] According to another feature of the emitting module made according to the teachings of the invention, the anti-reflective coating has a refractive index which is equal to the square root of the product between the refractive index of air and the refractive index of the material constituting the glass.
[0027] According to another characteristic of the transmitter module made according to the teachings of the invention, the emission peak of the electromagnetic processing radiation is located in the near-infrared range, for example 1130 nm.
[0028] According to another feature of the transmitter module made according to the teachings of the invention, the anti-reflective coating comprises at least one layer of magnesium fluoride.
[0029] According to another feature of the transmitter module made according to the teachings of the invention, the window is made of optical glass, or optical quartz or optical sapphire.
[0030] According to another feature of the transmitter module made according to the teachings of the invention, it includes a cooling circuit.
[0031] According to another feature of the transmitter module produced according to the teachings of the invention, the emitting semiconductor components of the assembly are laser diodes.
[0032] According to another feature of the emitter module made according to the teachings of the invention, the emitting semiconductor components are vertical cavity laser diodes, also known by their acronym VCSEL meaning "Vertical Cavity Surface Emitting Laser".
[0033] According to another feature of the transmitter module made according to the teachings of the invention, the emitting semiconductor components are light-emitting diodes.
[0034] The invention also relates to a thermal conditioning unit for thermoplastic preforms for a container production plant, comprising:
[0035] - a treatment cavity;
[0036] - a plurality of emitter modules, each of which is made according to any one of the preceding claims, the front face of the emitter modules being directed towards the processing cavity. Brief description of the figures
[0037] Other features and advantages of the invention will become apparent during the reading of the detailed description that follows, for the understanding of which reference should be made to the following attached drawings.
[0038] This is a top view which schematically represents a container manufacturing installation comprising a processing unit made according to the teachings of the invention.
[0039] This is a side view that represents an example of a preform suitable for processing by the processing unit.
[0040] Moon seen at the end of a processing cavity of the processing unit.
[0041] Laest is a cross-sectional view according to the section plane 4-4 of laqui which represents one side of the treatment cavity which is equipped with modules emitting electromagnetic treatment radiation made according to the teachings of the invention.
[0042] This is a perspective view that represents the front of a transmitter module.
[0043] Laest is a cross-sectional view according to the section plane 6-6 of laqui which represents the emitter module equipped with its protective glass, preforms passing in front of the emitter module being exposed to the electromagnetic processing radiation symbolized by arrows.
[0044] This is a larger-scale detailed view of the cross-section of the glass. Detailed description of the invention
[0045] In the following description, elements with an identical structure or analogous functions will be designated by the same reference.
[0046] In the following description, the terms "upstream" and "downstream" will be used in reference to the direction of movement of the preforms along their transport route.
[0047] In what follows, we will adopt, without limitation, the longitudinal, transverse and vertical orientations with reference to a 36 emitter module.
[0048] In the following description, the wavelengths of electromagnetic radiation will be expressed in nanometers, indicated by the abbreviation "nm".
[0049] A unit 10 for processing a preform 12 made of thermoplastic material is shown. The processing unit 10 belongs to an installation (not shown) for manufacturing containers made of thermoplastic material by forming, in particular stretch blow molding, said preforms 12.
[0050] The processing unit 10 is here a thermal conditioning unit for preforms 12 made of thermoplastic material, but it could also be a sterilization or decontamination unit.
[0051] As shown in Figure 1, each preform 12 comprises a cylindrical body 14 with axis "X". The body 14 has a lateral wall 16 that delimits an internal volume. The wall 16 has a shape of revolution about the axis "X".
[0052] The upper end of the body 14 opens into a neck 18. The neck 18 has the final shape of the container to be produced. Therefore, the neck 18 must not undergo any deformation during the manufacturing of the container. The body 14 has a base 20 that closes its lower end and is generally hemispherical in shape. The neck 18 has a collar 22 arranged at its junction with the body 14. The lower face of the collar 22 is designed to form a support surface to hold the preform 12 during its molding and / or transport.
[0053] Referring again to the figure, the processing unit 10 includes a device 24 for conveying the preforms 12 in a queue. The conveying device 24 includes individual supports 26 circulating in a closed circuit within the processing unit 10. Each individual support 26 is designed to transport a preform 12 in uninterrupted motion along a predetermined transport path 28 from an entry point "A" of the processing unit 10, which is fed by a queue of preforms 12, to an exit point "B" in the direction of a forming unit (not shown), in particular a blow molding or stretch blow molding unit.
[0054] The preforms 12 move in at least one line through the production facility. The preforms 12 follow a production flow until they reach an exit point of the facility. At the exit point, the preforms 12 have been formed into finished containers, after being molded in the forming station (not shown). The transport path 28 forms a segment of this production flow of the preforms 12.
[0055] The conveying device 24 is fed with preforms 12 by a transfer wheel 30 arranged tangentially to the inlet point "A". At the end of their transport path 28, the processed preforms 12 are individually picked up by a transfer wheel 32 arranged tangentially to the outlet point "B". From the outlet point "B" to the inlet point "A", the individual supports 26 of the conveying device 24 travel empty.
[0056] Each individual support 26 here includes means (not shown) capable of causing the preform 12 to rotate around its main axis during its movement along at least part of the transport path 28 to allow homogeneous processing of the preform 12. Such an individual support 26 is sometimes called a "turntable".
[0057] The conveying device 24 is, for example, a flexible transport chain that carries the individual supports 26.
[0058] In an alternative (not shown) to the conveying device 24, the individual supports 26 are carried by independent shuttles. The conveying device 24 then includes at least one linear motor to control the movement of each shuttle independently of the others along the closed circuit.
[0059] The processing unit 10 includes a processing cavity 34 through which the transport path 28 passes, allowing the bodies 14 of the preforms 12 to be treated during their movement. As they pass through the processing cavity 34, the bodies 14 of the preforms 12 are treated by being exposed to electromagnetic radiation of a wavelength adapted to the treatment.
[0060] In a heat treatment unit 10, the body 14 of each preform 12 is heated as it passes through the treatment cavity 34 by exposure to electromagnetic radiation suitable for heating the material constituting the preforms. This electromagnetic radiation is emitted selectively in the near-infrared range, for example, with a peak wavelength between 800 nm and 1600 nm, for example, 1130 nm. This allows the body 14 of the preforms 12 to be heated above their glass transition temperature, enabling them to be formed by the forming station while still hot.
[0061] In an alternative not shown, this is a treatment cavity allowing the sterilization of preforms 12 by exposure to electromagnetic treatment radiation emitted selectively in the ultraviolet range.
[0062] For this purpose, the treatment unit 10 comprises a plurality of 36 emitter modules which border the treatment cavity 34, as shown in Figures 3 and 4. The 36 emitter modules here have an identical shape and structure.
[0063] Such a 36 transmitter module is easily handled by an operator. For example, it weighs less than 2 kg.
[0064] Its dimensions are also small enough to be carried in one hand.
[0065] For example, to give an idea of the dimensions of such a 36 transmitter module, it has a width of approximately 10 cm, a depth of approximately 5 cm, and a height of approximately 35 cm. These dimensions are given as a non-limiting example and may vary, for example, by plus or minus 10 cm.
[0066] As shown in Figures 5 and 6, each transmitter module 36 comprises a main body 44. The main body 44 is preferably made of a single piece. The main body 44 is made of a thermally conductive material, such as a steel alloy, a copper alloy, or an aluminum alloy.
[0067] As described below, the transmitter module 36 includes other components mounted on the main body 44. The main body 44 thus provides a support function for these components. The components are attached to the main body 44 either directly or indirectly via interface elements, so that the transmitter module 36 forms a single, rigid unit.
[0068] As shown in Figures 5 and 6, the main body 44 is substantially plate-shaped and extends in a transverse vertical plane. It has a front face 38 which, in operation, is oriented towards the treatment cavity 34.
[0069] The main body 44 also includes a rear face 46, side edges 42, a lower edge 48 and an upper edge 50.
[0070] The 36 emitter module also includes several 40 semiconductor emitter components, each of which is capable of selectively emitting the electromagnetic processing radiation.
[0071] The emitting semiconductor components 40 are mounted on the front face of a substrate 39 to form at least one assembly 41 of emitting semiconductor components 40. The assembly 41 formed by the emitting semiconductor components 40 mounted on their substrate 39 is fixed to the main body 44. The assembly 41 of emitting semiconductor components 40 is more particularly mounted in or against the front face 38 of the main body 44. The substrate 39 has the form of a flat plate extending in a transverse vertical plane. The emitting semiconductor components 40 are thus distributed in the same transverse vertical plane. The emitting semiconductor components 40 are, for example, arranged in a matrix. Each emitting semiconductor component 40 is capable of emitting the processing electromagnetic radiation forwards along a beam with a longitudinal axis orthogonal to the front face 38.
[0072] Each 40 semiconductor emitting component here is formed by a laser diode.
[0073] In an unrepresented variant of the invention, each 40 semiconductor emitting component is a light-emitting diode.
[0074] The assembly 41 of emitting semiconductor components 40 is mounted on the main body 44 so as to radiate forwards.
[0075] The assembly 41 emitter of semiconductor components 40 emitters is securely fixed to the main body 44 by means of screws or any other suitable means.
[0076] Each 40 semiconductor emitting component is preferably a laser diode that preferably emits monochromatically or pseudo-monochromatically. Each 40 semiconductor emitting component emits electromagnetic radiation having an emission peak of a determined wavelength.
[0077] In one embodiment, where the processing unit 10 is a thermal conditioning unit designed for the thermal conditioning of preforms 12 for the purpose of manufacturing containers from them, the emitting semiconductor components 40 are designed to emit electromagnetic processing radiation in the infrared range.
[0078] The 40 emitting semiconductor components preferably have an emission peak in the near-infrared range, corresponding approximately to a peak energy absorption of PET and thus enabling rapid and efficient heating of the preforms 12, for example in a wavelength range between 800 nm and 1600 nm. The emission peak is, for example, located between 1100 nm and 1200 nm, preferably 1130 nm.
[0079] In theory, a monochromatic source is an ideal source, emitting a sinusoidal wave of a single frequency. In other words, its frequency spectrum consists of a single ray of zero spectral width (Dirac delta function).
[0080] In practice, such a source does not exist; a real source is at best quasi-monochromatic, meaning that its frequency spectrum spans a narrow but non-zero spectral band centered on a principal frequency where the intensity of the processing electromagnetic radiation is maximum. However, it is common practice to imprecisely describe such a real source as monochromatic. Furthermore, a source emitting quasi-monochromatically over a discrete spectrum comprising several narrow bands centered on distinct principal frequencies is called "pseudo-monochromatic" and is also referred to as a multimode source.
[0081] These include, for example, vertical cavity laser diodes, also known by their acronym VCSEL, meaning "Vertical Cavity Surface Emitting Laser".
[0082] In another embodiment, where the processing unit 10 is a sterilization unit designed for decontaminating preforms 12, for example, in preparation for subsequent aseptic filling, the emitting semiconductor components 40 are designed to emit in the ultraviolet range. Several wavelengths or ranges (such as infrared and ultraviolet) may also be combined. In this case, the emitting semiconductor components 40 are preferably light-emitting diodes (LEDs).
[0083] Furthermore, the 40 semiconductor transmitter components are powered via at least one electrical connector 51 arranged on the rear face 46 of the main body 44. The transmitter module 36 here includes three electrical connectors 51. These electrical connectors 51 are thus part of the transmitter module 36.
[0084] During operation, the assembly of 41 semiconductor emitting components 40 produces heat which, if not dissipated, reduces its efficiency. The assembly of 41 radiant sources is therefore preferably cooled, and more precisely maintained at a substantially constant temperature.
[0085] To this end, the emitter module 36 includes a heat exchanger 52 provided in the main body 44 for the thermal regulation of the set 41 of radiant sources 40. The heat transfer fluid can simply be water, but any other suitable fluid can be used, such as water with an additive, for example ethylene glycol or propylene glycol, or even a gas such as cooled air or nitrogen.
[0086] The heat exchanger 52 is supplied with cold heat transfer fluid through at least one inlet port (not shown) and hot heat transfer fluid is discharged through at least one outlet port (not shown). The inlet and outlet ports are intended to be connected to a cooling circuit of the processing unit 10.
[0087] The transmitter module 36 further comprises a reflector frame 58 surrounding the array 41 of radiant sources 40. As illustrated in the figure, the reflector frame 58 has the shape of a rectangular panel with a central rectangular opening for the passage of the electromagnetic processing radiation emitted by the array 41 of radiant sources 40.
[0088] The front face of the 58 reflector frame is an optically reflective face for electromagnetic radiation processing.
[0089] The 58 reflector frame is preferably made of a thermally conductive material, such as a steel alloy, a copper alloy or an aluminum alloy.
[0090] The reflector frame 58 is mounted on the main body 44 and secured there with close contact, for example by means of screws (or any other suitable fastening method ensuring close contact, such as thermal adhesive). This close contact ensures thermal contact between the main body 44 and the reflector frame 58. Consequently, the thermal regulation of the main body 44 ensures the thermal regulation of the reflector frame 58.
[0091] The reflector frame 58 allows at least part of the electromagnetic processing radiation it receives to be reflected back to the processing cavity 34, in order to minimize energy loss and thus increase the performance of the processing unit 10.
[0092] The emitting module 36 further includes a transparent window 60, which is impervious to the processing electromagnetic radiation. The window 60 extends in a transverse vertical plane. The window 60 is arranged longitudinally in front of the emitting semiconductor components 40. The window 60 is nevertheless located very close to the emitting semiconductor components 40, for example, less than 3 mm away, for example, approximately 2 mm away.
[0093] It comprises an inner face 62, facing the emitting semiconductor components 40, and an outer face 64, facing the processing cavity 34. The glass 60 is designed to be traversed by the electromagnetic processing radiation emitted by the emitting semiconductor components 40 before reaching the processing cavity 34.
[0094] Glass 60, for example, is made of optical-grade glass, also simply called "optical glass". Such a material is used, for example, in the manufacture of optical devices such as lens components, solar panels, projector protective glass, etc.
[0095] Alternatively, window 60 is made of a grade of optical quartz.
[0096] Alternatively, glass 60 is made of optical sapphire.
[0097] The glass 60 is here interposed between a rear face of the reflector frame 58 and the main body 44.
[0098] The set 41 of radiant sources is thus hermetically sealed in a delimited space between the glass 60 and the main body 44, thereby limiting the risk of pollution and short circuits by atmospheric humidity or dust.
[0099] To ensure that the air inside the case remains dry, a duct (not shown) is provided for circulating dry air into the case.
[0100] To reduce the proportion of electromagnetic radiation from the processing reflected by the glass 60 during its movement from its emission by the emitting semiconductor component 40 to the processing cavity 34, the invention proposes at least that one face 62, 64 of the glass 60 be covered with an anti-reflective coating 66.
[0101] At least the inner face 62 of the glass 60, which is turned towards the assembly 41 of emitting semiconductor components 40, is covered with the anti-reflective coating 66.
[0102] Preferably, both faces 62, 64 of the glass are covered with the anti-reflective coating 66.
[0103] The anti-reflective coating 66 is selected to prevent reflection of the processing electromagnetic radiation at least for wavelengths corresponding to the peak emission of the processing electromagnetic radiation. Preferably, the anti-reflective coating 66 is effective in preventing reflection of the electromagnetic radiation over a range of wavelengths on either side of the emission peak, for example, between ±10 nm from the emission peak, preferably between ±7 nm from the emission peak.
[0104] Such an anti-reflective coating 66 has, for example, a thickness "e" approximately equal to one quarter of the wavelength of the emission peak.
[0105] Furthermore, the anti-reflective coating 66 is made of a material having a suitable refractive index "nf". The refractive index "nf" of the anti-reflective coating 66 is preferably substantially equal to the square root of the product between the refractive index "n0" of the air in which each face 62, 64 of the glass 60 is immersed and the refractive index "ns" of the material constituting the glass 60, as indicated by the following equation:
[0106]
[0107] The 66 anti-reflective coating, for example, is made of a layer of magnesium fluoride (MgF2).
[0108] Alternatively, the 66 anti-reflective coating can be achieved by alternating several layers with different refractive indices selected to promote the passage of the processing electromagnetic radiation in a wide band and / or for wide angles of incidence.
[0109] The application of multiple layers may also be required when a material with the correct refractive index "nf" is not available. Layering coatings with different refractive indices allows for the creation of an anti-reflective coating with the desired refractive index "nf".
[0110] A 36 emitter module equipped with such a window 60 thus makes it possible to improve the efficiency of the processing unit 10 and to extend the life of the 40 emitting semiconductor components.
Claims
transmitter module (36) for a unit (10) for processing hollow bodies (22) made of thermoplastic material belonging to a container production installation by forming preforms, the transmitter module (36) comprising: - a main body (44) having a front face (38); - an assembly (41) of emitting semiconductor components (40) mounted on the front face (38) of the main body (44) and each of which is capable of selectively emitting a processing electromagnetic radiation having an emission peak of determined wavelength; - at least one transparent front window (60) which is mounted on the front face (38) of the main body to hermetically enclose the assembly (41) of emitting semiconductor components (40), the window (60) being intended to be traversed by the processing electromagnetic radiation;characterized in that at least one face (62, 64) of the glass (60) is covered with an anti-reflective coating (66) at least for the wavelengths corresponding to the peak emission of the electromagnetic processing radiation.; Transmitter module (36) according to the preceding claim, characterized in that at least the inner face (62) of the glass (60), which is turned towards the assembly (41) of transmitter semiconductor components (40), is covered with the anti-reflective coating (66). Module (36) according to any one of the preceding claims, characterized in that both faces (62, 64) of the glass (60) are covered with the anti-reflective coating (66). Module (36) according to any one of the preceding claims, characterized in that the anti-reflective coating (66) has a thickness (e) substantially equal to one quarter of the wavelength of the emission peak. Module (36) according to any one of the preceding claims, characterized in that the anti-reflective coating (66) has a refractive index (nf) which is equal to the square root of the product between the refractive index (n0) of air and the refractive index (ns) of the material constituting the glass (60). Module (36) according to any one of the preceding claims, characterized in that the emission peak of the electromagnetic processing radiation is located in the near-infrared range, for example 1130 nm. Module (36) according to the preceding claim, characterized in that the anti-reflective coating (66) comprises at least one layer of magnesium fluoride. Module (36) according to any one of the preceding claims, characterized in that the window (60) is made of optical glass, or optical quartz or optical sapphire. Module (36) according to any one of the preceding claims, characterized in that it comprises a cooling circuit (52). Module (36) according to any one of the preceding claims, characterized in that the emitting semiconductor components (40) of the assembly (41) are laser diodes Module (36) according to the preceding claim, characterized in that the emitting semiconductor components (40) are vertical cavity laser diodes, also known by their acronym VCSEL meaning "Vertical Cavity Surface Emitting Laser". Module (36) according to any one of claims 1 to 9, characterized in that the emitting semiconductor components (40) are light-emitting diodes. Thermoplastic preform thermal conditioning unit (10) for a container production plant, comprising: - a treatment cavity (34); - a plurality of emitting modules (36), each of which is made according to any one of the preceding claims, the front face (38) of the emitting modules (36) being directed towards the treatment cavity (34).
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