Thin-film device for suppressing signal crosstalk between pixels, and photosensitive apparatus and display apparatus

Abstract

Disclosed in the present invention are a thin-film device for suppressing signal crosstalk between pixels, and a photosensitive apparatus and a display apparatus. The thin-film device comprises: a bottom metal electrode array and a metal compound semiconductor thin-film array, which are formed by performing a single instance of photolithographic patterning treatment on a bottom metal electrode layer, which is disposed on a backplane, and a metal compound semiconductor thin-film layer; and a continuous / non-patterned active layer, a continuous / non-patterned upper charge transport layer, a continuous / non-patterned top metal electrode layer and a continuous / non-patterned transparent encapsulation layer, which are stacked in sequence on the patterned metal compound semiconductor thin-film array from bottom to top, wherein a metal compound semiconductor thin film covers an upper surface of a bottom metal electrode. The thin-film device further comprises a dense pinhole-free metal compound thin film formed by performing a surface chemical reaction on a side surface of the bottom metal electrode, and the metal compound thin film serves as a pixel isolation structure to wrap the entire side surface of the bottom metal electrode, so as to suppress signal crosstalk between adjacent pixels.

Description

A thin-film device, photosensitive device, and display device for suppressing inter-pixel signal crosstalk. Technical Field

[0001] This invention relates to the field of optoelectronic device technology, and more specifically, to a thin-film device, a photosensitive device, and a display device for suppressing signal crosstalk between pixels. Background Technology

[0002] Currently, the optoelectronic imaging arrays used in infrared cameras require high-purity, large-size semiconductor crystals with low defect density, fabricated into PIN structures; these are then photolithographically etched into pixels to form a sensor array. Pixel formation involves deep trench etching of the PIN structure at the pixel scale, post-surface treatment, encapsulation passivation, and bonding to an integrated array of complementary metal-oxide-semiconductor (CMOS) readout circuits on a silicon wafer. These processes limit pixel size, total pixel count, and manufacturing yield, thus limiting system cost. Furthermore, imperfections in the etching process and post-passivation can lead to charge trapping in the semiconductor bandgap, further limiting the device's optoelectronic performance and manufacturing yield.

[0003] In contrast, thin-film photodetectors based on organic semiconductors offer new opportunities for wearable electronics and image sensing due to their excellent mechanical flexibility, tunable bandgap, and direct integration onto CMOS integrated circuit wafers. Furthermore, organic semiconductors possess high light absorption coefficients (typically >10). 5 cm 2 With moderate carrier mobility and low charge trap density in the bandgap, these characteristics enable low-cost, large-area, high-pixel-count thin-film optical displays or thin-film optical detection image arrays without the need to pattern the active sensing layer (G. Yu et al., “Large-area full-color image sensors made of semiconductor polymers”, Adv. Materials 10, 1431 (1998)).

[0004] Whether this simple array structure with an unpatterned active layer can be used in image arrays with small pixel pitch and photosensitive (or light-emitting) arrays in PIN structures remains to be investigated. Furthermore, the unpatterned lower charge transport layer between the active layer and the patterned bottom metal electrode can lead to current leakage between adjacent pixels. This leakage can cause pixel crosstalk, resulting in image blurring; it also reduces image contrast when the pixel pitch is too small. Summary of the Invention

[0005] In order to solve the problem of inter-pixel signal crosstalk caused by the unpatterned lower charge transport layer between the active layer and the patterned bottom metal electrode in the prior art, the present invention provides a thin film device, photosensitive device and display device that suppresses inter-pixel signal crosstalk.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows:

[0007] A thin-film device for suppressing inter-pixel signal crosstalk, the thin-film device comprising:

[0008] The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of the bottom metal electrode layer disposed on the back plate and the metal compound semiconductor thin film layer deposited on the bottom metal electrode layer.

[0009] A continuous / unpatterned active layer, a continuous / unpatterned upper charge transport layer, a continuous / unpatterned top metal electrode layer, and a continuous / unpatterned transparent encapsulation layer are sequentially stacked on a patterned metal compound semiconductor thin film array from bottom to top.

[0010] In this configuration, the metal compound semiconductor thin film in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode in the bottom metal electrode array.

[0011] It also includes a dense, pinhole-free metal compound film formed on the side of the bottom metal electrode in the bottom metal electrode array through a surface chemical reaction; the metal compound film is a semiconductor or an insulating layer;

[0012] The metal compound film serves as a pixel isolation structure, wrapping the entire side of the bottom metal electrode to suppress signal crosstalk between adjacent pixels.

[0013] Preferably, the metal compound semiconductor film located on the upper surface of the bottom metal electrode is P-type or N-type and forms an ohmic contact with the upper surface of the bottom metal electrode.

[0014] Furthermore, when the metal compound semiconductor thin film is P-type, the material of the metal compound semiconductor thin film includes oxides or sulfides of Cu, Cr, Ni, V, Ga, W, Zr or Mo, or oxides or sulfides of their metal alloys.

[0015] Furthermore, when the metal compound semiconductor thin film is N-type, the material of the metal compound semiconductor thin film includes oxides of Ti, Ta, Zn, In, Sn, Mg, Hf, Nb, or Nd, or oxides of their metal alloys.

[0016] Furthermore, the metal compound semiconductor thin film is also doped with Mg and / or Ga.

[0017] Preferably, it further includes forming a Ti thin film or a Mo thin film between the bottom electrode metal and the metal compound semiconductor thin film.

[0018] Preferably, the surface chemical reaction includes one or more combinations of oxygen plasma oxidation, high-temperature thermal oxidation, chemical oxidation, and sulfidation.

[0019] Preferably, the material of the bottom metal electrode layer is Al, Ti, Cu, or a metal alloy thereof.

[0020] Furthermore, the metal compound film is an oxide of Al, Ti, Cu, or an alloy thereof.

[0021] Preferably, a metal compound semiconductor thin film layer is formed on the bottom metal electrode layer by magnetron sputtering, chemical vapor deposition, electrodeposition, solution deposition, sol-gel deposition, vacuum thermal evaporation, electron beam deposition, or atomic layer deposition.

[0022] Preferably, the active layer comprises an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blend film, an inorganic semiconductor or compound semiconductor in the form of single-phase or quantum dot nanoparticles, or a combination thereof in a mixed form or a thin film stack; wherein, D represents an organic molecule of electron donor; and A represents an organic molecule of electron acceptor;

[0023] The inorganic semiconductors include Si, Ge, SiGe, and CuInS in crystalline or polycrystalline forms. x Se 2-x (0≤x≤2), CuInGa(S,Se), PbS, PbI2, PBI3, InGaAs nanoquantum dots, nanoquantum films or single-phase films;

[0024] The organic semiconductor comprises an organic blend of one or more organic molecules that serve as electron donors (D) and one or more organic molecules that serve as electron acceptors (A), forming an organic blend of D / A.

[0025] A photosensitive device includes a backplane with multiple pixel readout circuits integrated inside, and a thin-film device disposed on the backplane to suppress signal crosstalk between pixels as described above.

[0026] The active layer serves as a photosensitive layer, used to detect light incident on the photosensitive device;

[0027] Each pixel readout circuit is connected to a corresponding bottom metal electrode via a metal post.

[0028] A display device includes a backplane with multiple pixel driving circuits integrated inside, and a thin-film device disposed on the backplane to suppress signal crosstalk between pixels as described above.

[0029] The active layer serves as a light-emitting layer, used to generate light for luminescence display;

[0030] Each pixel driving circuit is connected to a corresponding bottom metal electrode via a metal post.

[0031] Compared with the prior art, the beneficial effects of the present invention are:

[0032] This invention passivates a dense, pinhole-free metal compound film on the side of each bottom metal electrode in the bottom metal electrode array. Because the side of the bottom metal electrode is wrapped with the metal compound film, the problem of excessively small spacing between two adjacent patterned bottom metal electrodes and current leakage between adjacent pixels caused by residual defects in the patterning process is avoided. This effectively suppresses pixel crosstalk between two pixels, thereby improving the clarity and achieving low pixel crosstalk. Attached Figure Description

[0033] Figure 1 is a schematic diagram of the thin film device provided by the present invention.

[0034] Figure 2 illustrates the preparation process of forming a metal compound thin film on the side of the bottom metal electrode according to the present invention.

[0035] In the figure, 100-backplane, 101-substrate, 102-pixel readout circuit, 103-planarization layer, 104-metal post, 200-bottom metal electrode, 201-metal compound thin film, 300-metal compound semiconductor thin film, 400-photosensitive layer, 500-upper charge transport layer, 600-top metal electrode, 700-encapsulation layer, 140-photoresist coating. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments.

[0037] It should be understood that, when used in this specification, the terms “comprising” and “including” indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0038] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used in this specification, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms.

[0039] It should also be further understood that the term "and / or" as used in this specification refers to any combination of one or more of the associated listed items, as well as all possible combinations, and includes such combinations.

[0040] The term "bulk heterojunction structure" in this invention refers to an interpenetrating network structure with nanoscale phase separation formed by blending donor and acceptor materials.

[0041] In this invention, the term "donor material" refers to a P-type semiconductor material.

[0042] In this invention, the term "receptor material" refers to an N-type semiconductor material.

[0043] In this invention, the term "I-semiconductor material" refers to an undoped intrinsic semiconductor material. The term "bandgap" in this invention refers to the optical bandgap of a semiconductor material, the value of which (in electron volts) can be obtained by dividing 1240 by the cutoff wavelength (in nanometers) of the semiconductor material's absorption edge.

[0044] In this invention, the term "active layer" refers to a thin film layer in a device structure that has photoelectric or electro-optic activity.

[0045] In this invention, the term "photosensitive layer" refers to a thin film layer in a device structure that is responsible for absorbing photons and generating free electrons and holes.

[0046] In this invention, the term "light-emitting layer" refers to a thin film layer in the device structure that converts injected free electrons and holes into photons.

[0047] Generally, in metal-semiconductor-metal (MSM) thin-film devices, only the bottom metal electrode is patterned, and continuous active and top metal electrode layers are used. The pixel size and pixel pitch of such thin-film devices can be defined by the bottom metal electrode. When this structure is used in an M1-PIN-M2 thin-film device, if only the bottom metal electrode is patterned, while the unpatterned lower charge transport layer between the active layer and the bottom metal electrode remains unpatterned, current leakage between adjacent pixels can occur, leading to pixel crosstalk. This phenomenon is particularly severe when the image pixel pitch is very small. This leakage can cause image blurring and reduce image contrast.

[0048] Therefore, this invention patterns the lower charge transport layer based on a patterned bottom metal electrode, particularly for image arrays with small pixel pitch and narrow space between adjacent pixels. Furthermore, a metal compound film is formed on the entire side of the bottom metal electrode through a surface chemical reaction, serving as a pixel isolation structure. This metal compound film encapsulates the entire side of the bottom metal electrode to eliminate current leakage between adjacent bottom metal electrodes, thereby effectively suppressing pixel crosstalk.

[0049] Specifically, the present invention provides a thin-film device for suppressing inter-pixel signal crosstalk, the thin-film device comprising:

[0050] The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of the bottom metal electrode layer disposed on the back plate and the metal compound semiconductor thin film layer deposited on the bottom metal electrode layer.

[0051] A continuous / unpatterned active layer, a continuous / unpatterned upper charge transport layer, a continuous / unpatterned top metal electrode layer, and a continuous / unpatterned transparent encapsulation layer are sequentially stacked on a patterned metal compound semiconductor thin film array from bottom to top.

[0052] In this arrangement, the patterned bottom metal electrode array is aligned with the patterned metal compound semiconductor thin film array, such that the metal compound semiconductor thin film in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode in the bottom metal electrode array.

[0053] It also includes a dense, pinhole-free metal compound film formed on the side of the bottom metal electrode in the bottom metal electrode array through a surface chemical reaction; the metal compound film is a semiconductor or an insulating layer;

[0054] The metal compound film serves as a pixel isolation structure, wrapping the entire side of the bottom metal electrode to suppress signal crosstalk between adjacent pixels.

[0055] The metal compound thin film of this invention is formed by a surface chemical reaction (e.g., surface oxidation) on the side of the bottom metal electrode exposed to air. This formation method is self-aligned, and the metal compound thin film formed by the surface chemical reaction is dense, uniform, and free of pinhole defects. The metal compound thin film, acting as a pixel isolation structure, encapsulates the entire side of the bottom metal electrode, avoiding current leakage between adjacent pixels and effectively suppressing signal crosstalk between adjacent pixels. Therefore, leakage caused by defects in pixels of conventional thin-film devices, as well as current leakage between adjacent pixels, is greatly suppressed. It should be noted that the metal compound semiconductor thin film layer in this invention is not formed by a surface chemical reaction on the upper surface of the bottom metal electrode layer. Instead, the metal compound semiconductor thin film layer is directly deposited on the bottom metal electrode layer using magnetron sputtering, chemical vapor deposition, electrodeposition, solution deposition, sol-gel deposition, vacuum thermal evaporation, electron beam evaporation, or atomic layer deposition. Therefore, the metal compound semiconductor thin film layer may not be a semiconductor metal oxide of the metal corresponding to the bottom metal electrode layer.

[0056] Since the metal oxide film formed on the side of the bottom metal electrode in this invention is an insulating layer or a semiconductor layer, it can effectively suppress signal crosstalk between pixels, thus making the pixel spacing smaller, thereby realizing a large-size thin-film device with high pixel density and millions of pixels.

[0057] In this embodiment, the metal compound semiconductor thin film located on the upper surface of the bottom metal electrode is P-type or N-type and forms an ohmic contact with the upper surface of the bottom metal electrode. The metal compound semiconductor thin film serves as the lower charge transport layer, forming a PIN or NIP structure with the active layer and the upper charge transport layer. Therefore, this invention provides a thin-film device with a high pixel density and small pixel pitch, featuring a PIN pixel structure.

[0058] Based on the provided thin-film device for suppressing inter-pixel signal crosstalk, the present invention also provides a method for fabricating the thin-film device for suppressing inter-pixel signal crosstalk, the fabrication method comprising the following steps:

[0059] A continuous bottom metal electrode layer is formed on the provided backplate;

[0060] A continuous metal compound semiconductor thin film layer is deposited on a continuous bottom metal electrode layer;

[0061] A single photolithography patterning process is performed on the bottom metal electrode layer and the metal compound semiconductor thin film layer to obtain a patterned bottom metal electrode array and a patterned metal compound semiconductor thin film array aligned with the patterned bottom metal electrode array; wherein the metal compound semiconductor thin film in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode in the bottom metal electrode array.

[0062] A dense, pinhole-free metal compound film is formed by a surface chemical reaction on the side of the bottom metal electrode exposed to air.

[0063] A continuous / unpatterned active layer, a continuous / unpatterned upper charge transport layer, a continuous / unpatterned top metal electrode layer, and a continuous / unpatterned transparent encapsulation layer are formed sequentially from bottom to top on a metal compound semiconductor thin film array.

[0064] This invention enables the fabrication of large-size thin-film devices with high pixel density, millions of pixels, and PIN-type thin-film sensors through a single photolithography patterning process on only the bottom metal electrode layer and the metal compound semiconductor thin film layer. This invention achieves aligned bottom metal electrode arrays and patterned metal compound semiconductor thin film arrays through a single photolithography patterning process. This fabrication method eliminates the alignment problems introduced by multi-layer photolithography for large-area array fabrication, thus eliminating yield losses from misaligned devices and resulting in a very high manufacturing yield.

[0065] The active layer of the present invention can be used as a photosensitive layer or a light-emitting layer; when the active layer is used as a photosensitive layer, the thin film device can be used to make a photosensitive device (i.e., a photodetector). The main principle of the photosensitive device is to use the photovoltaic effect to complete the photoelectric conversion. The generated charge carriers are transmitted to the external circuit through the built-in electric field or reverse bias voltage to complete the signal detection process.

[0066] In addition to serving as a photosensitive layer, when the active layer uses a light-emitting material as the light-emitting layer, the thin-film device becomes a display device (i.e., a light-emitting display device). Unlike the working principle of a photosensitive device, a display device operates under a positive bias voltage, so charge carriers need to be injected into the light-emitting layer under the drive of an electric field, rather than being extracted to the external circuit.

[0067] Example 1

[0068] This embodiment uses a photosensitive device as an example for detailed description. As shown in Figure 1, a photosensitive device for suppressing inter-pixel signal crosstalk includes:

[0069] A backplane 100 with multiple pixel readout circuits 102 integrated inside;

[0070] A thin-film device for suppressing inter-pixel signal crosstalk disposed on a backplane 100, the thin-film device specifically comprising:

[0071] The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of the bottom metal electrode layer disposed on the back plate 100 and the metal compound semiconductor thin film layer deposited on the bottom metal electrode layer.

[0072] A continuous / unpatterned photosensitive layer 400, a continuous / unpatterned upper charge transport layer 500, a continuous / unpatterned top metal electrode layer 600, and a continuous / unpatterned transparent encapsulation layer 700 are sequentially stacked on a patterned metal compound semiconductor thin film array from bottom to top.

[0073] The patterned bottom metal electrode array is aligned with the patterned metal compound semiconductor thin film array, such that the metal compound semiconductor thin film 300 in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode 200 in the bottom metal electrode array.

[0074] It also includes a dense, pinhole-free metal compound film 201 formed by a surface chemical reaction on the side of the bottom metal electrode 200 in the bottom metal electrode array; the metal compound film 201 is a semiconductor or an insulating layer;

[0075] The metal compound film 201 serves as a pixel isolation structure, wrapping the entire side of the bottom metal electrode 200 to suppress signal crosstalk between adjacent pixels.

[0076] Each pixel readout circuit 102 is connected to a corresponding bottom metal electrode 200 via a metal post 104.

[0077] In this embodiment, the photosensitive layer 400 is used to detect light incident on the photosensitive device. The metal compound semiconductor thin film 300 located on the upper surface of the bottom metal electrode 200 serves as the lower charge transport layer, forming a PIN junction or a NIP junction with the photosensitive layer 400 and the upper charge transport layer 500, respectively.

[0078] Figure 1 shows a cross-sectional view of the entire photosensitive device. The backplate 100 can be made of various insulating materials or high-resistivity semiconductor materials, and can have either a flat surface or a curved surface of a specific shape. Besides inorganic semiconductor wafer materials, the backplate 100 can also be glass, ceramic, or plastic. For photosensitive devices used for image sensing, multiple pixel readout circuits 102 are integrated on the backplate 100. For high-pixel-density photosensitive devices, the pixel readout circuits 102 are typically fabricated on the upper surface of a single-crystal silicon wafer using CMOS technology. For medium- and low-photosensitive pixel-density photosensitive devices, the backplate 100 can integrate CMOS field-effect transistor or thin-film transistor (TFT) pixel readout circuits 102. For ultra-large-scale and high-photosensitive pixel-density image arrays, the pixel readout circuits 102 on the backplate 100 can be fabricated using CMOS field-effect transistors (MOSFETs, or FETs). For pixel readout circuits 102 fabricated on a single-crystal silicon wafer using CMOS integrated circuit technology, they can be connected to a corresponding bottom metal electrode 200 via metal posts 104. The metal post 104 and planarization layer 103 can be fabricated using traditional silicon wafer back-end fabrication materials and processes. Besides using silicon wafer back-end fabrication processes, the metal post 104 and planarization layer 103 can also be fabricated using corresponding processes in thin-film transistor (TFT) backplane fabrication. Specifically, above the pixel readout circuit 102 of a CMOS field-effect transistor or thin-film transistor (TFT), the planarization layer 103 can be formed using inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride via vapor deposition. The planarization layer 103 can also be fabricated using photolithographically patternable organic insulating materials (such as photolithographically patternable polyimide films or photolithographically patternable polyacrylate films). The planarization layer 103 can also be fabricated using a stack of the aforementioned inorganic and organic insulating materials. When using this fabrication approach, the metal post 104 does not need to be fabricated separately and can be fabricated simultaneously with the bottom metal electrode.

[0079] The device structure shown in Figure 1 in this embodiment allows the photosensitive pixels (200-600 stacked structure) to be vertically superimposed with the pixel readout circuit 102 below, which is commonly referred to as a three-dimensional circuit. This design can effectively reduce the pixel size, thereby increasing the pixel density.

[0080] In this embodiment, a patterned bottom metal electrode array is formed on the upper surface of the backplate 100, comprising multiple bottom metal electrodes 200. The thickness of the bottom metal electrodes 200 can be selected in the range of 50 nm to 500 nm according to the reflectivity requirements of the photosensitive layer. The material of the bottom metal electrode layer is Al, Ti, Cu, or their metal alloys, wherein the metal alloy can be Al-Pa alloy, Ti-Al alloy, Al-Mg alloy, Al-Cu alloy, Al-Nb alloy, Al-Nd alloy, or Al-Zr alloy. Among them, Al (98%)-Nb (2%) is an alloy widely used in the display and wafer industries. Therefore, the metal compound film 201 formed by surface chemical reaction of the bottom metal electrodes 200 is an oxide of Al, Ti, or Cu, or an oxide of a metal alloy containing Al, Ti, or Cu, such as aluminum oxide. Since aluminum oxide is insulating, it effectively avoids current leakage between adjacent pixels, thereby suppressing pixel crosstalk between pixels. It's important to note that while Ti2O3 (titanium trioxide), formed by the oxidation of Ti, is also an insulator, TiO2 (titanium dioxide) is an n-type wide-bandgap semiconductor. Therefore, when using Ti as the bottom metal electrode, if an insulating layer needs to be formed on its side, it is oxidized to Ti2O3; if a semiconductor layer needs to be formed on its side, it is oxidized to TiO2 (titanium dioxide). CuO (copper oxide), formed by surface chemical reactions of Cu, is a p-type semiconductor.

[0081] The metal compound thin film 201 formed by the surface chemical reaction of the present invention is a dense film without pinhole defects.

[0082] In one specific embodiment, the metal compound semiconductor thin film 300 located on the upper surface of the bottom metal electrode 200 is P-type or N-type and forms an ohmic contact with the upper surface of the bottom metal electrode 200.

[0083] The metal compound semiconductor thin film 300 serves as the lower charge transport layer, forming a PIN or NIP structure with the photosensitive layer 400 and the upper charge transport layer 400. Since the metal compound semiconductor thin film 300 covers the upper surface of the bottom metal electrode 200, surface chemical reactions will not occur on the upper surface of the bottom metal electrode 200 during surface chemical reactions.

[0084] In this embodiment, when the metal compound semiconductor thin film 300 is P-type, the material of the metal compound semiconductor thin film 300 includes oxides or sulfides of Cu, Cr, Ni, V, Ga, W, Zr, or Mo, or oxides or sulfides of their metal alloys. Examples include MoO, WO3, NiO, CuO2, CuSCN, etc.

[0085] In this embodiment, when the metal compound semiconductor thin film 300 is N-type, the material of the metal compound semiconductor thin film 300 includes oxides of Ti, Ta, Zn, In, Sn, Mg, Hf, Nb, or Nd, or oxides of their metal alloys. Examples include ZnO, AlZnO, InGaZnO, and TiO2. 2-x Ta2O 5-x etc.

[0086] Furthermore, the metal compound semiconductor thin film is also doped with Mg and / or Ga. This invention alters the work function of the metal compound semiconductor thin film by doping it with a small amount of metal (Mg, and / or Ga).

[0087] As shown in Figure 2, the present invention also provides a method for fabricating a thin-film device that suppresses inter-pixel signal crosstalk, the method comprising the following steps:

[0088] A continuous bottom metal electrode layer is formed on the provided backplate 100;

[0089] A continuous metal compound semiconductor thin film layer is formed on a continuous bottom metal electrode layer;

[0090] A single photolithography patterning process is performed on the bottom metal electrode layer and the metal compound semiconductor thin film layer. Specifically, a photoresist coating 140 is first spin-coated onto the metal compound semiconductor thin film layer; then, a mask is used for exposure, and a pattern is formed in the developing tank as a mask to etch the bottom metal electrode layer and the metal compound semiconductor thin film layer; finally, a suitable etchant is used to etch the metal compound semiconductor thin film layer and the bottom metal electrode layer, thereby obtaining a patterned / discontinuous bottom metal electrode array and a metal compound semiconductor thin film array; wherein the metal compound semiconductor thin film 300 in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode 200 in the bottom metal electrode array;

[0091] Remove the photoresist coating 140 on the upper surface of the metal compound semiconductor thin film 300, and perform a surface chemical reaction on the side of the bottom metal electrode 200 exposed to air to form a dense, pinhole-free metal compound thin film 201.

[0092] A continuous / unpatterned photosensitive layer 400, a continuous / unpatterned upper charge transport layer 500, a continuous / unpatterned top metal electrode layer 600, and a continuous / unpatterned transparent encapsulation layer 700 are formed sequentially from bottom to top on a metal compound semiconductor thin film 300.

[0093] The bottom metal electrode 200 can be prepared by methods such as magnetron sputtering, thermal evaporation, or electron beam evaporation.

[0094] The metal compound semiconductor thin film on top can be prepared by one or more of the following methods: magnetron sputtering, electron beam evaporation, vacuum thermal evaporation, atomic layer deposition, chemical vapor deposition, electrodeposition, solution deposition, and sol-gel deposition. Choosing an appropriate preparation environment can ensure that the metal compound semiconductor thin film 300 and the upper surface of the bottom metal electrode 200 form an ohmic contact.

[0095] It is important to note that if the metal compound semiconductor thin film 300 is prepared using solution deposition or sol-gel deposition methods, it should be heat-treated at an appropriate temperature after the precursor film is formed, and then photolithography patterning should be performed to ensure that the metal compound semiconductor thin film 300 does not dissolve in a photoresist stripping solution made of a polar solvent (such as acetone).

[0096] In this embodiment, a suitable etchant is used to etch the metal compound semiconductor thin film layer and the bottom metal electrode layer; for example, oxalic acid is used as the etchant to etch ZnO, AlZnO, AlSnO, InGaZnO, InSnZnO, InAlZnO, MoO, WO3, NiO, CuO2, and CuSCN. Type A aluminum etchant and Type D aluminum etchant are used to etch the aluminum metal layer or aluminum alloy layer. Alternatively, a dry etching method can be used to fabricate the patterned metal compound semiconductor thin film 300 and the underlying bottom metal electrode 200 using a gel film deposition method.

[0097] In this embodiment, the photosensitive layer 400 is prepared by solution film formation or vacuum thermal evaporation deposition.

[0098] The preparation of the upper charge transport layer 500 can be independently selected from one or more of the following methods: solution film formation, sol-gel film formation, vacuum thermal evaporation, atomic layer deposition, chemical vapor deposition, electrodeposition, and anodic oxidation.

[0099] The preparation of the top metal electrode 600 and the bottom metal electrode 200 is independently selected from one or more of the following methods: vacuum thermal evaporation, electron beam evaporation, molecular beam evaporation or plasma sputtering, atomic layer deposition or liquid film formation followed by reduction and conversion, electroplating or electrodeposition.

[0100] In this embodiment, the surface chemical reaction includes one or more combinations of oxygen plasma oxidation, high-temperature thermal oxidation, chemical oxidation, and sulfidation.

[0101] Compared to the various defects easily formed during photolithography patterning, the metal compound film 201 formed by surface chemical processing is dense and free of pinhole defects. Furthermore, the pattern of this surface chemically generated metal compound film 201 is automatically aligned with the pattern of the bottom metal electrode 200. This invention, by forming the metal compound film 201 on the side of the bottom metal electrode 200 through a surface chemical reaction, can suppress inter-pixel signal crosstalk, thereby enabling the fabrication of photosensitive devices with small pixel pitch and high pixel density.

[0102] In this embodiment, the thickness of the metal compound film 201 can be controlled by the process parameters used in the surface chemical reaction. The thickness of the metal compound film 201 is typically set to 5 nm - 100 nm. Preferably, the thickness of the metal compound film 201 is 10 - 50 nm.

[0103] In this embodiment, if the average surface roughness of the metal compound semiconductor thin film 300 located on the upper surface of the bottom metal electrode 200 is relatively large, it will cause pinholes, device shortening, and bright pixel defects to form in the photosensitive layer 400 formed on the metal compound semiconductor thin film 300, thus hindering the formation of a high-quality photosensitive layer 400. Therefore, the average surface roughness of the metal compound semiconductor thin film 300 is generally required to be less than 5 nm, and preferably, the average surface roughness of the metal compound semiconductor thin film 300 is less than 3 nm.

[0104] In this embodiment, a Ti or Mo thin film is formed between the bottom metal electrode 200 and the metal compound semiconductor thin film 300. The Ti or Mo thin film covers the upper surface of the bottom metal electrode 200, providing it with oxidation resistance, particularly for aluminum-based bottom metal electrodes 200. Furthermore, when the metal compound semiconductor thin film is N-type, the Ti thin film also improves the resistance between the bottom metal electrode 200 and the N-type metal compound semiconductor thin film; when the metal compound semiconductor thin film is P-type, the Mo thin film further improves the resistance between the bottom metal electrode 200 and the P-type metal compound semiconductor thin film.

[0105] Specifically, in the fabrication process, a bottom metal electrode layer is first formed on the backplane, followed by the formation of a Ti or Mo thin film, and then a metal compound semiconductor thin film layer is deposited. Finally, the bottom metal electrode layer, Ti or Mo thin film, and metal compound semiconductor thin film layer are patterned by a single photolithography step to obtain a patterned metal electrode array, a Ti or Mo thin film array aligned with the metal electrode layer array, and a metal compound semiconductor thin film array.

[0106] In this embodiment, the surface chemical reaction method specifically includes oxygen plasma surface treatment at room temperature or high temperature, chemical oxidation in air and oxygen-rich environments, humid air at room temperature or high temperature, and chemical oxidation using oxidants (such as H2O2, hot water at 85°C-100°C), or a combination of the above processes. In addition to oxidation on the sides of each bottom metal electrode 200, sulfidation (e.g., treatment with H2S) can also be performed on the sides of each bottom metal electrode 200. Therefore, a metal sulfide film or a metal sulfate film can also be formed by sulfidation reaction with a corresponding reactant on the sides of the bottom metal electrode 200.

[0107] In one specific embodiment, a patterned bottom metal electrode 200 and a metal compound semiconductor thin film 300 with strong light reflection within the operating spectral range are preferred. For example, aluminum (Al) exhibits strong reflectivity across a broad spectral range of ultraviolet, visible, and infrared light. TiO2-x is formed as an N-type metal compound semiconductor thin film on the bottom metal electrode 200 prepared using Al through magnetron sputtering. Due to the strong optical resonant cavity effect formed on the upper and lower surfaces of the TiO2-x thin film, the Al / TiO2-x bilayer film can exhibit maximum reflectivity within certain spectral ranges, thereby optimizing the photosensitivity of the photosensitive device at specific operating wavelengths.

[0108] TiO2-x and Ta2O 5-x These are N-type metal compound semiconductor thin films. Their Fermi level is approximately -4.1 eV, and its Fermi level can be tuned by doping with magnesium, aluminum, zinc, tin, or copper to form alloy compound semiconductor thin films. Similarly, a Fermi level matching the photosensitive layer 400 can also be achieved using alloy compound semiconductor thin films.

[0109] In this embodiment, the metal compound semiconductor thin film 300 is provided with additional electrons by interstitial metals and oxygen vacancies, which serve as the primary charge carriers. The charge carrier concentration can be controlled by surface chemical reaction conditions; that is, while the side of the bottom metal electrode 200 undergoes surface oxidation in oxygen-rich air, O is also doped into the metal compound semiconductor thin film 300 to achieve the desired charge carrier concentration. The charge carrier concentration of the metal compound semiconductor thin film 300 can range from 10... 15 cm -3 -10 20 cm -3 Internal regulation.

[0110] In one specific embodiment, the bandgap of the metal compound semiconductor thin film 300 is greater than the bandgap of the photosensitive film 400.

[0111] Taking TiO2-x as an example, TiO2-x is an N-type semiconductor with a band gap of approximately 3.1 eV (light absorption begins at 400 nm). This wide-bandgap N-type oxide semiconductor can effectively pull photogenerated electrons out of the photosensitive layer, but it will block photogenerated holes at the TiO2-x / photosensitive layer interface.

[0112] Regarding dark current, under low reverse bias or zero bias, the NI interface can block holes, while the IP interface can block electrons, thereby further reducing dark current.

[0113] In this embodiment, the photosensitive layer 400 comprises an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blend film, an inorganic semiconductor or compound semiconductor in the form of single-phase or quantum dot nanoparticles, or a combination thereof in a mixed form or a stacked thin film form. Here, D represents an organic molecule that is an electron donor; A represents an organic molecule that is an electron acceptor.

[0114] The inorganic semiconductors include Si, Ge, SiGe, and CuInS in crystalline or polycrystalline forms. x Se 2-x Nanoscale quantum dots, nanoscale quantum films, or single-phase films of CuInGa(S,Se), PbS, PbI2, PBI3, and InGaAs (0≤x≤2).

[0115] The organic semiconductor comprises an organic blend of one or more organic molecules that serve as electron donors (D) and one or more organic molecules that serve as electron acceptors (A), forming an organic blend of D / A.

[0116] In this embodiment, the photosensitive layer 400 may have at least one molecular component with a band gap of less than 1.7 eV (wavelength greater than 700 nm), that is, the photosensitive device in this embodiment may be an infrared photodetector.

[0117] In this embodiment, for the photosensitive device, the photosensitive layer 400 can be a single-molecule type organic semiconductor thin film, or a hybrid film containing at least one donor molecule (D) and one acceptor molecule (A) (commonly referred to as a D / A bulk heterojunction film). Donor (acceptor) molecules are often referred to as P-type (N-type) in the traditional inorganic semiconductor device industry. The photosensitive layer 400 can also be fabricated together with other thin-film semiconductor layers. Examples include perovskite semiconductor thin films (such as PbI2 and / or PbI3), PbS, CuInSe2, CuInSSe, CuInGaSe, and CuInGaSSe.

[0118] The absorption coefficients of the organic and inorganic compound semiconductors listed above are in the range of 10. 4 -10 5 cm -1Within this range, when the photosensitive layer has a thin film thickness of 100nm-1µm, it can achieve a light absorption rate of 90%-99% within the working range. This contrasts sharply with the photosensitive layer in silicon CMOS image arrays, where a thickness of 10-500µm is typically required to achieve high light absorption in the near-infrared region (700nm-1000nm).

[0119] The photosensitive layer 400 can also be made of a thin film structure composed of the various semiconductor materials listed above to achieve the desired spectral response or performance improvement. Furthermore, the photosensitive layer 400 can also be made of a composite thin film containing the aforementioned semiconductor materials. As mentioned above, the photosensitive layer 400 can be made of organic molecules in the form of a D / A bulk heterojunction. Hybrid blend films can also be made of a phase comprising an organic semiconductor and another phase comprising inorganic semiconductor nanoparticles (or quantum dots). By utilizing the unique mechanical and electronic properties of organic semiconductors, such hybrid blend films can be fabricated with low-trapped states in the semiconductor bandgap, thereby improving device performance.

[0120] In this embodiment, the upper charge transport layer 500 typically has a charge opposite to that of the metal compound semiconductor thin film 300, which serves as the lower charge transport layer. The metal compound semiconductor thin film, the photosensitive layer, and the upper charge transport layer 500 can be stacked to form a PIN (or NIP) structure. In addition to PIN or NIP junctions, various structures such as PIP, NIN, NIPIN, and PINIP can also be stacked to form.

[0121] When the bottom metal electrode 200 is the anode, the metal compound semiconductor thin film 300 serves as the hole transport layer, the upper charge transport layer 500 serves as the electron transport layer, and the top metal electrode 600 serves as the cathode. When the bottom metal electrode 200 is the cathode, the metal compound semiconductor thin film 300 serves as the electron transport layer, the upper charge transport layer serves as the hole transport layer 500, and the top metal electrode 600 serves as the anode.

[0122] This example also includes adding a surface-promoting material (commonly referred to as a self-assembled monolayer, SAM) between the metal compound semiconductor film 300 and the photosensitive layer 400 to improve adhesion and reduce surface defects at the interface. When the metal compound semiconductor film is an N-type semiconductor, examples of SAM materials used for the formed NI contact interface include SAM-C60, C60-COOH-SAM, and SAM-PBD. When the metal compound semiconductor film is a P-type semiconductor, suitable SAM materials for the formed PI contact interface include 2PACz, x-4PACz (where x = H, Cl, F, Ph), and PPAOMe. Their molecular structures are shown below.

[0123]

[0124] When necessary, an encapsulation layer 700 is added above the top metal electrode 600 to ensure stable operation of the photosensitive device under various operating environments and throughout its target lifespan. The encapsulation layer 700 should be transparent in the operating wavelength range, with an optical transmittance of over 50%.

[0125] The encapsulation layer 700 can be formed using various vacuum deposition methods, such as thermal evaporation, molecular beam deposition, plasma sputtering, or atomic layer deposition. It can also be prepared using liquid deposition methods, such as drop coating, dip coating, spin coating, and various printing methods. Besides using a single material, the encapsulation layer can also be formed using alternating multilayer films. In addition to improving the performance of the encapsulation layer, this multilayer film structure can also be used to optimize the optical resonant cavity structure of thin-film photodiodes in the operating wavelength range, thereby optimizing their photosensitiveness and specific detectivity.

[0126] The encapsulation layer 700 commonly uses inorganic materials including silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, magnesium oxide, zirconium oxide, and magnesium fluoride. Commonly used organic materials include polymethyl methacrylate, polyethylene oxide, polystyrene, polyvinylpyrrolidone, polycarbonate, polyacrylic acid, epoxy resin, parylene, and polysiloxane.

[0127] In this embodiment, the continuous / unpatterned top metal electrode layer 600 is transparent or translucent, and examples of its constituent materials include any element or alloy containing at least one of the following: thin-layer titanium (Ti), tungsten (W), titanium nitride (TiN), platinum (Pt), gold (Au), silver (Ag), germanium (Ge), nickel (Ni), tin (Sn), and aluminum (Al). In particular, indium titanium oxide (InTiO) has high transmittance relative to the infrared region and is desirable as a constituent material of the continuous / unpatterned transparent top metal electrode layer 600. In addition to the materials mentioned above, examples of materials for the top metal electrode 600 include indium tin oxide (ITO), tin oxide (SnO2), indium tungsten oxide (InWO), indium zinc oxide (InZnO), aluminum-doped zinc oxide (AlZnO), gallium-doped zinc oxide (GaZnO), magnesium- and aluminum-doped zinc oxide (AlMgZnO), indium gallium oxide (InGaO), InGaZnO4 (IGZO), fluorine-doped indium oxide (FIO), antimony-doped tin oxide (ATO), fluorine-doped tin oxide (FTO), zinc oxide (ZnO), boron-doped ZnO (BZnO), and indium tin oxide (InSnZnO).

[0128] The material of the upper charge transport layer 500, which serves as the electron transport layer, is selected from organic compound 1, inorganic compound 1, or a combination thereof;

[0129] Wherein, the organic compound 1 is selected from fullerenes and their derivatives, 4,7-diphenyl-1,10-phenanthroline, polyethyleneimine, polyethoxyethyleneimine, 2,9-dimethyl-4,7-biphenyl-1,10-o-diazaphenanthroline, [9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], bromo-[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 8-hydroxyquinoline lithium, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, bis(2-methyl-8-quinoline)-4-(phenylphenol)aluminum, 1,3,5-tris[(3-pyridyl)-phenyl-3-yl]benzene, or mixtures or complexes of the above materials;

[0130] The inorganic compound 1 is selected from zinc oxide, tin oxide, aluminum-doped zinc oxide, magnesium-doped zinc oxide, gallium-doped zinc oxide, tin-doped zinc oxide, titanium oxide, tantalum oxide, zinc sulfide, chromium sulfide, or a mixture or composite of the above materials.

[0131] The material of the upper charge transport layer 500, which serves as the hole transport layer, is selected from organic compound 2, inorganic compound 2, or a combination thereof;

[0132] Wherein, the organic compound 2 is selected from 4,4'-cyclohexylbis[N,N'-di(4-methylphenyl)aniline], N,N'-bis(naphthyl-1-yl)-N,N'-bis(phenyl)-benzidine, N,N'-bis(naphthyl-1-yl)-N,N'-bis(phenyl)-2,7-diamino9,9-spirodifluorene, 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4',4"-tris(carbazole-9-yl)triphenylamine, poly(4-butyltriphenylamine), polyvinylcarbazole, polystyrene-N,N'-diphenyl-N,N'-bis-(3-methylphenyl)-(1,1)-biphenyl-4,4 One or more of '-diamine perfluorocyclobutane, poly3,4-ethylenedioxythiophene mixed polystyrene sulfonate;

[0133] The inorganic compound 2 is selected from tungsten oxide, molybdenum oxide, vanadium oxide, chromium oxide, nickel oxide, copper oxide, cuprous oxide, cuprous thiocyanate, copper sulfide, copper iodide, or a mixture or compound of the above materials.

[0134] Example 2

[0135] This embodiment provides a display device, which includes a backplate with multiple pixel driving circuits integrated inside, and a thin-film device disposed on the backplate for suppressing signal crosstalk between pixels.

[0136] Each pixel driving circuit is connected to a corresponding bottom metal electrode via a metal post.

[0137] The thin-film device includes:

[0138] The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of the bottom metal electrode layer disposed on the back plate and the metal compound semiconductor thin film layer deposited on the bottom metal electrode layer.

[0139] A continuous / unpatterned light-emitting layer, a continuous / unpatterned upper charge transport layer, a continuous / unpatterned top metal electrode layer, and a continuous / unpatterned transparent encapsulation layer are sequentially stacked from bottom to top on a patterned metal compound semiconductor thin film array; it also includes a dense, pinhole-free metal compound thin film formed by a surface chemical reaction on the side of the bottom metal electrode in the bottom metal electrode array; the metal compound thin film is a semiconductor or an insulating layer;

[0140] The metal compound film serves as a pixel isolation structure, wrapping the entire side of the bottom metal electrode to suppress signal crosstalk between adjacent pixels.

[0141] The display device described herein has a basically the same structure and manufacturing process as the photosensitive device in Example 1, as shown in Figure 1. The specific differences are as follows:

[0142] The photosensitive layer 400 is replaced with a light-emitting layer to generate light for display.

[0143] In this embodiment, the undoped active layer can be used as the light-emitting layer, which includes one or more light-emitting materials and can be in a multilayer or single-layer structure. The luminous efficiency can be optimized by adjusting the mixing ratio and film thickness in the form of a donor / guest mixture.

[0144] Depending on the material used in the light-emitting layer, it can achieve a combination of multiple wavelengths, including UV (200-400nm), visible light (400-700nm), near-infrared (700-1000nm), short-wavelength infrared (1000-2500nm), mid-wavelength infrared (2.5-25um), and more.

[0145] The material of the light-emitting layer includes p-type organic semiconductor materials and n-type organic semiconductor materials. Among them, the p-type organic semiconductor can be a compound that acts as an electron donor to supply electrons.

[0146] For example, the p-type organic semiconductor can be boron subphthalocyanine chloride (SubPc), copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), or any combination thereof, but is not limited thereto. The n-type organic semiconductor can be a compound that acts as an electron acceptor, accommodating electrons. For example, the n-type organic semiconductor can be N2200, C60 fullerene, C70 fullerene, or any combination thereof, but is not limited thereto.

[0147] The molecular structure of N2200 is shown below:

[0148]

[0149] When the upper charge transport layer serves as an electron transport layer, it may include 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP: 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), 4,7-diphenyl-1,10-phenanthroline (Bphen: 4,7-Diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ, NTAZ, or any combination thereof.

[0150] In addition to the materials mentioned above, the electron transport layer may also include metallic substances.

[0151] The metal-containing substance may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ion of the alkali metal complex may be Li, Na, K, Rb, or Cs ions, and the metal ion of the alkaline earth metal complex may be Be, Mg, Ca, Sr, or Ba ions. The ligands coordinated to the metal ions of the alkali metal and alkaline earth metal complexes may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.

[0152] When the upper charge transport layer serves as a hole transport layer, it may include the following: m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD (Spiro-TPD), spiro-NPB (Spiro-NPB), methylated -NPB, TAPC, HMTPD, 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA: 4,4',4"-tris(N-carbazolyl)triphenylamine), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA: Polyaniline / Dodecylbenzenesulfonic acid), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS: Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), polyaniline / camphorsulfonic acid (PANI / CSA: Polyaniline / Camphor sulfonic acid). (acid), polyaniline / poly(4-styrenesulfonate) (PANI / PSS: Polyaniline / Poly(4-styrenesulfonate)) or any combination thereof.

[0153] Example 3

[0154] In this embodiment, O2 plasma can be used to form a dense, pinhole-free metal compound film on the side of the bottom metal electrode.

[0155] The process conditions and equipment are the same as for O2 plasma. Evacuate to 300 mtorr, then turn on the plasma source, setting the power to 300W, and continue for 15 minutes. The backplate temperature can be set to 25°C. o C to 100 o Within the range of C. If necessary, the above process can be repeated, thereby producing a dense, pinhole-free metal compound film on the side of the bottom metal electrode. If needed, the wafer surface can be aligned non-perpendicularly to the ion beam to optimize the chemical reaction rate. Large-area uniformity can be ensured by wafer rotation.

[0156] Example 4

[0157] This embodiment can also employ annealing in high-temperature air at 100-300°C to achieve the formation of a dense metal compound film on the side of the bottom metal electrode.

[0158] Specifically, after patterning and fabricating a bottom metal electrode array (the bottom metal electrode material is aluminum) and a metal compound semiconductor thin film array on a silicon wafer, the silicon wafer is ultrasonically cleaned in acetone for 5 minutes, followed by ultrasonic treatment in isopropanol for 5 minutes. Then, the silicon wafer is annealed at approximately 120°C for 20 minutes, resulting in an aluminum oxide thin film layer forming on the sides of the bottom metal electrodes. It should be noted that if only a metal compound insulating film is formed through high-temperature oxidation, it is not necessary to apply it to the silicon wafer.

[0159] It is important to note that for pure aluminum bottom metal electrode films, the temperature during high-temperature oxidation should not be too high, and should be kept below 150°C. This is to avoid the hillock problem in pure aluminum films, which are small peaks that form during the high-temperature heating of pure aluminum films. However, if aluminum alloys (such as Al-Nd, Al-Nb, and Al-Zr) are used, the hillock problem in pure aluminum films can be effectively avoided. Furthermore, Al alloy films can be heated to 200-250°C for surface oxidation without causing hillocks to pierce through the top thin oxide layer and the side thin Al2O3 layer.

[0160] Example 5

[0161] For the bottom metal electrode, this embodiment can use chemical oxidation treatment (H2O2 or 85°C hot water) to form a dense metal compound film on the side of the bottom metal electrode.

[0162] Example 6

[0163] By using any combination of oxidation methods from Examples 3 to 5, a higher quality, pinhole-free, dense metal compound film is formed on the side of the bottom metal electrode.

[0164] Within the scope of protection of this invention, the technical solutions and / or implementation methods can be modified and varied in various ways. For example, a transparent bottom metal electrode (such as ITO, AlZnO, CuOx) in the short-wave infrared region can be used to replace the opaque metal electrode. The photosensitive device shown in Figure 1 can detect incident images simultaneously from above and below. For images incident from the top, image information across a wide band from ultraviolet, visible, and near-infrared to short-wave infrared can be detected; for images incident from the bottom, this device is only sensitive to image information in the short-wave infrared region (wavelength greater than 1 micrometer). This image sensing device can replace multiple cameras in portable devices such as mobile phones and helmets.

[0165] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the claims of the present invention.

Claims

1. A thin film device for suppressing inter-pixel signal cross-talk, comprising: The thin-film device includes: The patterned bottom metal electrode array and the patterned metal compound semiconductor thin film array are formed by a single photolithography patterning process of the bottom metal electrode layer disposed on the back plate and the metal compound semiconductor thin film layer deposited on the bottom metal electrode layer. A continuous / unpatterned active layer, a continuous / unpatterned upper charge transport layer, a continuous / unpatterned top metal electrode layer, and a continuous / unpatterned transparent encapsulation layer are sequentially stacked on a patterned metal compound semiconductor thin film array from bottom to top. In this arrangement, the patterned bottom metal electrode array is aligned with the patterned metal compound semiconductor thin film array, such that the metal compound semiconductor thin film in the metal compound semiconductor thin film array covers the upper surface of the bottom metal electrode in the bottom metal electrode array. It also includes a dense, pinhole-free metal compound film formed on the side of the bottom metal electrode in the bottom metal electrode array through a surface chemical reaction; the metal compound film is a semiconductor or an insulating layer; The metal compound film serves as a pixel isolation structure, wrapping the entire side of the bottom metal electrode to suppress signal crosstalk between adjacent pixels.

2. The thin film device of claim 1, wherein: The metal compound semiconductor film located on the upper surface of the bottom metal electrode is of P-type or N-type and forms an ohmic contact with the upper surface of the bottom metal electrode.

3. The thin film device of claim 2, wherein: When the metal compound semiconductor thin film is P-type, the material of the metal compound semiconductor thin film includes oxides or sulfides of Cu, Cr, Ni, V, Ga, W, Zr or Mo, or oxides or sulfides of their metal alloys.

4. The thin film device of claim 2, wherein: When the metal compound semiconductor thin film is N-type, the material of the metal compound semiconductor thin film includes oxides of Ti, Ta, Zn, In, Sn, Mg, Hf, Nb, or Nd, or oxides of their metal alloys.

5. The thin film device of any of claims 1 to 4, wherein: The metal compound semiconductor thin film is also doped with Mg and / or Ga.

6. The thin film device of claim 1, wherein: It also includes forming a Ti or Mo thin film between the bottom electrode metal and the metal compound semiconductor thin film.

7. The thin film device of claim 1, wherein: The surface chemical reaction includes one or more combinations of oxygen plasma oxidation, high-temperature thermal oxidation, chemical oxidation, and sulfidation.

8. The thin film device of claim 1, wherein: The material of the bottom metal electrode layer is Al, Ti, Cu, or their metal alloys.

9. The thin film device of claim 8, wherein: The metal compound film is an oxide of Al, Ti, Cu, or their metal alloys.

10. The thin film device of claim 1, wherein: Metal compound semiconductor thin films are formed on the bottom metal electrode layer by magnetron sputtering, chemical vapor deposition, electrodeposition, solution deposition, sol-gel method, vacuum thermal evaporation, electron beam evaporation, or atomic layer deposition.

11. The thin film device of claim 1, wherein: The active layer comprises an organic semiconductor in the form of a single-phase film or a D / A bulk heterojunction blend film, an inorganic semiconductor or compound semiconductor in the form of single-phase or quantum dot nanoparticles, or a combination thereof in a mixed form or a stacked thin film form; wherein, D represents an organic molecule of electron donor; and A represents an organic molecule of electron acceptor; wherein the inorganic semiconductor comprises Si, Ge, SiGe, CuInS x Se 2-x (0≤x≤2), CuInGa(S,Se), PbS, PbI2, PBI3, nanometer quantum dots, nanometer quantum film or single-phase film of InGaAs The organic semiconductor comprises an organic blend of one or more organic molecules that serve as electron donors (D) and one or more organic molecules that serve as electron acceptors (A), forming an organic blend of D / A.

12. A photosensitive device, characterized by: It includes a backplane with multiple pixel readout circuits integrated inside, and a thin-film device disposed on the backplane as described in any one of claims 1 to 11 for suppressing signal crosstalk between pixels; The active layer serves as a photosensitive layer, used to detect light incident on the photosensitive device; Each pixel readout circuit is connected to a corresponding bottom metal electrode via a metal post.

13. A display device, characterized by comprising: It includes a backplane with multiple pixel driving circuits integrated inside, and a thin-film device for suppressing inter-pixel signal crosstalk as described in any one of claims 1 to 11 disposed on the backplane; The active layer serves as a light-emitting layer, used to generate light for luminescence display; Each pixel driving circuit is connected to a corresponding bottom metal electrode via a metal post.

Images