Photoelectric conversion module, method for producing photoelectric conversion module, electronic device, power supply module, and building material

Abstract

A photoelectric conversion module including a substrate, a plurality of photoelectric conversion elements on the substrate, and a high resistance layer. The plurality of photoelectric conversion elements includes a first photoelectric conversion element and a second photoelectric conversion element. Each of the photoelectric conversion elements includes a first electrode, a laminate, and a second electrode in this order on the substrate. The laminate includes an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer. The second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element are electrically connected. The high resistance layer is between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element, and has a resistivity higher than that of the hole transport layer of the second photoelectric conversion element.

Description

FN202501126 [DESCRIPTION] [Title of Invention] PHOTOELECTRIC CONVERSION MODULE, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION MODULE, ELECTRONIC DEVICE, POWER SUPPLY MODULE, AND BUILDING MATERIAL [Technical Field]

[0001] The present disclosure relates to a photoelectric conversion module, a method for producing a photoelectric conversion module, an electronic device, a power supply module, and a building material. [Background Art]

[0002] In recent years, solar cells using photoelectric conversion elements are expected to be widely used not only as an alternative to fossil fuels and a measure against global warming, but also as a self-sustaining power source that does not require battery replacement, power supply wiring, and the like. Further, solar cells as a self-sustaining power source are attracting a great deal of attention as one of the energy harvesting technologies required for IoT (Internet of Things) devices, artificial satellites, and the like.

[0003] As solar cells, in addition to inorganic solar cells using silicon and the like, which have long been widely used, there are organic solar cells such as dye-sensitized solar cells, organic thin- film solar cells, and perovskite solar cells. Perovskite solar cells can be produced using conventional printing methods without using electrolytic liquids containing organic solvents and the like, and thus they are advantageous in terms of improving safety, reducing production costs, and the like. Further, a method is known for producing a photoelectric conversion element that includes a step of forming a hole injection layer by applying and drying a solution containing a first p- type organic semiconductor and an oxidizing agent capable of oxidizing the first p-type organic semiconductor on a transparent electrode, and oxidizing the first p-type organic semiconductor with the oxidizing agent (see, e.g., PTL 1). [Citation List] [Patent Literature]

[0004] [PTL 1] Japanese Patent No.5673799 [Summary of Invention] [Technical Problem]

[0005] An object of the present invention is to provide a photoelectric conversion module that has high photoelectric conversion efficiency and can prevent short circuits between photoelectricFN202501126 conversion elements even when multiple photoelectric conversion elements are electrically connected. [Solution to Problem]

[0006] Embodiments of the present invention provides a photoelectric conversion module including a substrate, a plurality of photoelectric conversion elements on the substrate, and a high resistance layer. The plurality of photoelectric conversion elements includes a first photoelectric conversion element and a second photoelectric conversion element. Each of the photoelectric conversion elements includes a first electrode, a laminate, and a second electrode in this order on the substrate. The laminate includes an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer. The second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element are electrically connected. The high resistance layer is between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element, and has a resistivity higher than that of the hole transport layer of the second photoelectric conversion element. [Advantageous Effects of Invention]

[0007] According to embodiments of the present invention, a photoelectric conversion module is provided that has high photoelectric conversion efficiency and can prevent short circuits between photoelectric conversion elements even when multiple photoelectric conversion elements are electrically connected. [Brief Description of Drawings]

[0008] A more complete appreciation of embodiments of the present disclosure and many of the attendant advantages and features thereof can be readily obtained and understood from the following detailed description with reference to the accompanying drawings. FIG.1 is a schematic diagram illustrating a photoelectric conversion element of a first embodiment. FIG.2 is a schematic diagram illustrating a photoelectric conversion module of the first embodiment. FIG.3 is a schematic diagram illustrating a photoelectric conversion module of the first embodiment. FIG.4 is a schematic diagram illustrating a photoelectric conversion element of a second embodiment. FIG.5 is a schematic diagram illustrating a photoelectric conversion module of the second embodiment. FIG.6 is a top view of the photoelectric conversion module illustrated in FIG.5.FN202501126 FIG.7 is a top view of the photoelectric conversion module illustrated in FIG.5, cut along a dotted line A-A’. FIG.8 is a schematic diagram illustrating a photoelectric conversion element of a third embodiment. FIG.9 is a schematic diagram illustrating a photoelectric conversion element of a fourth embodiment. FIG.10 is a schematic diagram illustrating a photoelectric conversion module of the fourth embodiment. FIG.11 is a schematic diagram illustrating an electronic device including a photoelectric conversion element according to an embodiment. FIG.12 is a schematic diagram illustrating a power supply module including a photoelectric conversion element according to an embodiment. FIG.13 is a schematic diagram illustrating a building material including a photoelectric conversion element according to an embodiment. The accompanying drawings are intended to depict embodiments of the present disclosure and should not be interpreted to limit the scope thereof. The accompanying drawings are not to be considered as drawn to scale unless explicitly noted. Also, identical or similar reference numerals designate identical or similar components throughout the several views. [Description of Embodiments]

[0009] In describing embodiments illustrated in the drawings, specific terminology is employed for the sake of clarity. However, the disclosure of this specification is not intended to be limited to the specific terminology so selected and it is to be understood that each specific element includes all technical equivalents that have a similar function, operate in a similar manner, and achieve a similar result. Referring now to the drawings, embodiments of the present disclosure are described below. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. (Photoelectric conversion element) A photoelectric conversion element refers to an element capable of converting light energy into electrical energy or electrical energy into light energy, and is applied to solar cells, photodiodes, and the like. The photoelectric conversion element of the present embodiment includes a first electrode, a laminate, a second electrode disposed opposite the first electrode across the laminate. The laminate includes an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer. The photoelectric conversion element further includes a high resistance layer covering at least part of the side surface of the hole transport layer, and the resistivity of the high resistance layer is higher than the resistivity of the hole transport layer.FN202501126 The photoelectric conversion element may include other layers such as a first substrate and a passivation layer as necessary.

[0010] (Photoelectric conversion module) A photoelectric conversion module of the present embodiment is a photoelectric conversion module including a substrate and a plurality of photoelectric conversion elements including a first photoelectric conversion element and a second photoelectric conversion element on the substrate. Each of the photoelectric conversion elements includes a first electrode, a laminate, and a second electrode in this order on the substrate. The laminate includes an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer. The second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element are electrically connected. The photoelectric conversion module further includes a high resistance layer between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element, and the high resistance layer has a resistivity higher than that of the hole transport layer of the second photoelectric conversion element. At least one of the plurality of photoelectric conversion elements in the photoelectric conversion module needs to be the photoelectric conversion element of the present embodiment, and all of them may be the photoelectric conversion elements of the present embodiment. In the photoelectric conversion module, when all of the plurality of photoelectric conversion elements are those of the present embodiment, the effect of preventing short circuits between the photoelectric conversion elements can be enhanced. The plurality of photoelectric conversion elements in the photoelectric conversion module are electrically connected in series and / or parallel. In particular, it is preferable that the plurality of photoelectric conversion elements are electrically connected in series, and it is preferable that the photoelectric conversion element of the present embodiment is connected in series with other adjacent photoelectric conversion elements. The photoelectric conversion module includes, for example, a plurality of photoelectric conversion elements on a first substrate. It preferably further includes a second substrate different from the first substrate and a sealing member. It also includes other members as necessary.

[0011] The photoelectric conversion module according to embodiments of the present invention is intended to address the following conventional problems and to solve those problems. It is known that in conventional photoelectric conversion modules, multiple spatially divided photoelectric conversion elements are electrically connected to form a series circuit to increase the output voltage. The divided areas between adjacent photoelectric conversion elements need to be made as narrow as possible to maximize a large power generation area, and it is preferable to set a gap between adjacent photoelectric conversion elements to 200 μm or less. However, if the gap between the photoelectric conversion elements is too narrow,FN202501126 short circuits, that is, unintended conduction in undesired areas, can occur between the adjacent photoelectric conversion elements, resulting in a decrease in power generation efficiency.

[0012] As a result of investigations into the above problems, the inventors of the present invention have found that it is possible to provide a photoelectric conversion module which prevents short circuits between photoelectric conversion elements even when a plurality of photoelectric conversion elements are electrically connected. The photoelectric conversion module includes a substrate and a plurality of photoelectric conversion elements including a first photoelectric conversion element and a second photoelectric conversion element on the substrate, each of the photoelectric conversion elements including a first electrode, a laminate, and a second electrode in this order on the substrate, the laminate including an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer, the second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element being electrically connected, and the photoelectric conversion module further including a high resistance layer between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element, the high resistance layer having a resistivity higher than that of the hole transport layer of the second photoelectric conversion element.

[0013] Members included in the photoelectric conversion module and in the photoelectric conversion element of the present embodiment are described below. The photoelectric conversion module of the present embodiment includes a substrate and a plurality of photoelectric conversion elements on the substrate.

[0014] <First substrate> The photoelectric conversion element of the present embodiment includes a first substrate. The shape, structure, and size of the first substrate are not particularly limited and can be appropriately selected according to the purpose.

[0015] A material of the first substrate is not particularly limited as long as it has insulating properties, and can be appropriately selected according to the purpose. Examples of the material include, but are not limited to, glass, plastic film, and ceramic substrates. Of these, when a firing step is included for forming an electron transport layer as described below, a substrate is preferably heat resistant to the firing temperature. Further, a flexible substrate is more preferable as the first substrate.

[0016] The substrate may be provided on the outermost part of the photoelectric conversion element, either on the first electrode side, the second electrode side, or on both.FN202501126 Hereinafter, the substrate provided on the outermost part on the first electrode side is referred to as a first substrate, the substrate provided on the outermost part on the second electrode side is referred to as a second substrate, and the first substrate and the second substrate are collectively referred to as substrates.

[0017] The average thickness of the substrate is not particularly limited and can be appropriately selected according to the purpose. The average thickness can be, for example, 50 μm or more and 5 mm or less. The average thickness of the substrate can be measured, for example, using a tactile film thickness gauge, a vernier caliper, a digital thickness gauge, or the like.

[0018] <First electrode> The shape, structure, and size of the first electrode are not particularly limited and can be appropriately selected according to the purpose. The structure of the first electrode is not particularly limited and can be a single-layer structure or a structure in which multiple materials are laminated.

[0019] A material of the first electrode is not particularly limited as long as it has conductivity, and can be appropriately selected according to the purpose. Examples thereof include, but are not limited to, a transparent conductive metal oxide, carbon, and metal. Examples of the transparent conductive metal oxide include, but are not limited to, indium tin oxide (hereinafter referred to as “ITO”), fluorine-doped tin oxide (hereinafter referred to as “FTO”), antimony-doped tin oxide (hereinafter referred to as “ATO”), niobium-doped tin oxide (hereinafter referred to as “NTO”), aluminum-doped zinc oxide (hereinafter referred to as “AZO”), indium zinc oxide, and niobium titanium oxide. Examples of the carbon include, but are not limited to, carbon black, a carbon nanotube, graphene, and fullerene. Examples of the metal include, but are not limited to, gold, silver, aluminum, nickel, indium, tantalum, and titanium. These may be used alone or in combination of two or more types. Of these, the transparent conductive metal oxide with high transparency is preferable, and ITO, FTO, ATO, NTO, and AZO are more preferable.

[0020] The first electrode is preferably formed on the first substrate, and an integrated commercially available product in which the first electrode is formed on the first substrate in advance can be used. Examples of the integrated commercially available product include, but are not limited to, FTO-coated glass, ITO-coated glass, AZO-coated glass, an FTO-coated transparent plastic film, and an ITO-coated transparent plastic film. These may be used alone, or two or more types may be used in combination as a mixture or in a stacked structure.FN202501126 Further, the electrode in the integrated commercially available product may be appropriately processed to produce a substrate on which multiple first electrodes are formed.

[0021] The average thickness of the first electrode is not particularly limited and can be appropriately selected according to the purpose. The average thickness is preferably 5 nm or more and 100 μm or less, more preferably 50 nm or more and 10 μm or less. The average thickness can be measured, for example, using a contact film thickness gauge or a scanning electron microscope (SEM).

[0022] Examples of a method for forming the first electrode include, but are not limited to, a sputtering method, a vapor deposition method, and a spray method.

[0023] <Laminate> The layers present between the first electrode and the second electrode described below are collectively referred to as a laminate. The laminate includes an electron transport layer, a photoelectric conversion layer, and a hole transport layer, and may include other layers. Examples of the other layers include, but are not limited to, a passivation layer.

[0024] <<Electron transport layer>> The electron transport layer refers to a layer that transports electrons generated in the photoelectric conversion layer described below to the first electrode. For this reason, in the case of a forward-type photoelectric conversion element, the electron transport layer is preferably disposed adjacent to the first electrode, and in the case of a reverse-type photoelectric conversion element, the electron transport layer is preferably disposed adjacent to the second electrode.

[0025] The shape and size of the electron transport layer are not particularly limited and can be appropriately selected according to the purpose. Further, the structure of the electron transport layer may be a single layer structure, or a multilayer structure in which multiple layers are laminated.

[0026] The electron transport layer includes an electron transport material. The electron transport material is not particularly limited and can be selected appropriately according to the purpose, with a semiconductor material being preferable.

[0027] The semiconductor material is not particularly limited, and examples thereof include, but are not limited to, a compound containing an elemental semiconductor, a compound semiconductor, or an electron-withdrawing organic material (N-type organic semiconductor). Examples of the elemental semiconductor include, but are not limited to, silicon and germanium.FN202501126 Examples of the compound semiconductor include a metal chalcogenide. Examples of the metal chalcogenide include, but are not limited to, a metal oxide (oxide semiconductor), a metal sulfide, a metal selenide, and a metal telluride. Examples of the metal oxide (oxide semiconductor) include, but are not limited to, oxides of titanium, tin, zinc, iron, tungsten, zirconium, hafnium, strontium, indium, cerium, yttrium, lanthanum, vanadium, niobium, and tantalum. Examples of the metal sulfide include, but are not limited to, sulfides of cadmium, zinc, lead, silver, antimony, bismuth, and copper-indium. Examples of the metal selenide include, but are not limited to, selenides of cadmium, lead, and copper-indium. Examples of the metal telluride include, but are not limited to, a telluride of cadmium. Examples of the other compound semiconductors include, but are not limited to: phosphides of zinc, gallium, indium, and cadmium; and gallium arsenide. Of these, the metal oxide (oxide semiconductor) is preferable. In particular, the material more preferably includes at least one of titanium oxide, zinc oxide, tin oxide, and niobium oxide, and the material particularly preferably includes tin oxide. Examples of the electron-withdrawing organic material include, but are not limited to, an imide derivative, fullerene, a fullerene derivative. Of these, a fullerene derivative is preferable in terms of charge separation and charge transport.

[0028] The semiconductor material and the electron-withdrawing organic material as the electron transport material may be used alone or in combination of two or more types. Further, the crystal type of the semiconductor material is not particularly limited and may be appropriately selected according to the purpose, and may be single crystal, polycrystalline, or amorphous.

[0029] The electron transport layer preferably includes at least one compound selected from a phosphonic acid compound, a boronic acid compound, a sulfonic acid compound, a halogenated silyl compound, and an alkoxysilyl compound on the electron transport material on the surface on the photoelectric conversion layer side. By including these compounds on the electron transport material on the surface on the photoelectric conversion layer side, the electron transport layer is expected to control the physical properties of the interface between the electron transport layer and the photoelectric conversion layer. In other words, by coating the electron transport material with these compounds on the surface of the electron transport layer on the photoelectric conversion layer side, the resistivity at the interface between the electron transport layer and the photoelectric conversion layer can be reduced, thereby exhibiting the effect of smoothing the electron movement. These compounds may be bonded to the electron transport material. Examples of the bond include, but are not limited to, a covalent bond and an ionic bond.

[0030] FN202501126 The compound included on the surface of the electron transport layer preferably includes a nitrogen atom in terms of compatibility with the photoelectric conversion layer (perovskite layer) described below. Examples of the compound included on the surface of the electron transport layer include, but are not limited to, methylphosphonic acid, phenylphosphonic acid, phenethylphosphonic acid, (1-aminoethyl)phosphonic acid, (2-aminoethyl)phosphonic acid, methanesulfonic acid, benzenesulfonic acid, 2-thienylboronic acid, methyltrichlorosilane, and n- hexyltriethoxysilane.

[0031] The average thickness of the electron transport layer is not particularly limited and can be appropriately selected according to the purpose. The average thickness is preferably 5 nm or more and 1 μm or less, more preferably 10 nm or more and 700 nm or less.

[0032] Examples of a method for forming a thin film of the electron transport material in the electron transport layer include, but are not limited to, a method of forming a thin film of the electron transport material in vacuum (vacuum film formation method) and a wet film formation method. Examples of the vacuum film formation method include, but are not limited to, a sputtering method, a pulsed laser deposition (PLD) method, an ion beam sputtering method, an ion- assisted deposition method, an ion plating method, a vacuum deposition method, an atomic layer deposition (ALD) method, and a chemical vapor deposition (CVD) method. Examples of the wet film formation method include a sol-gel method. Examples of the wet film formation method include a sol-gel method. The sol-gel method is a method in which a gel is prepared from a solution through chemical reactions such as hydrolysis, polymerization, and condensation, and then the gel is subjected to heat treatment to promote densification.

[0033] Examples of a method for applying the compound onto the electron transport material includes a method of applying a solution including the compound onto the electron transport material as a thin film and then drying the solution. Examples of a method for applying the solution containing the compound includes, but are not limited to, a dip method, a spray method, a wire bar method, a spin coating method, a roller coating method, a blade coating method, a gravure coating method, and an inkjet method.

[0034] <<Photoelectric conversion layer>> The photoelectric conversion layer is provided between the electron transport layer and the hole transport layer described below. A layer other than the photoelectric conversion layer may be provided between the electron transport layer and the hole transport layer. In other words, the photoelectric conversion layer does not need to be disposed in contact with the electron transport layer and the hole transport layer. The photoelectric conversion layer is notFN202501126 particularly limited as long as it is a layer that performs photoelectric conversion, and it can be appropriately selected according to the purpose. Examples of the photoelectric conversion layer include, but are not limited to, a perovskite layer and a bulk heterojunction layer.

[0035] <<<Perovskite layer>>> The perovskite layer includes a perovskite compound and has the function of performing charge separation using irradiated light. The perovskite layer, which has the function of absorbing the light and sensitizing the electron transport layer, is preferably disposed adjacent to the electron transport layer. The shape and size of the perovskite layer are not particularly limited and can be selected appropriately according to the purpose.

[0036] The perovskite compound is a composite material of an organic compound and an inorganic compound and is represented by the following general formula (1). XαYβZγ···General formula (1) In the general formula (1), the ratio of α:β:γ is 3:1:1, β and γ represent integers greater than 1, X represents a halogen atom, Y represents a monovalent cation, and Z represents a metal ion. Note that even if the ratio does not strictly match the above ratio due to crystal defects or the like, the perovskite compound may be still used as long as it can function as a perovskite layer. X in the general formula (1) is not particularly limited as long as X is an element belonging to Group 17 in the periodic table defined by the International Union of Pure and Applied Chemistry (IUPAC), and examples thereof include, but are not limited to, chlorine, bromine, and iodine. These may be used alone or in combination of two or more types. Examples of Y in the general formula (1) include, but are not limited to, a monovalent organic cation and a monovalent inorganic cation. By including at least two or more of monovalent organic cations and monovalent inorganic cations, Y in the general formula (1) can complicate the crystal structure of the perovskite layer, making it possible to improve the durability of the perovskite layer. Examples of the monovalent organic cation include, but are not limited to, an alkylamine compound ion. Examples of the alkylamine compound ion include, but are not limited to, methylammonium, ethylammonium, n-butylammonium, and formamidinium. Examples of the monovalent inorganic cation include, but are not limited to, a cesium ion, a potassium ion, and a rubidium ion. Z in the general formula (1) is not particularly limited and can be appropriately selected according to the purpose. Examples of Z include, but are not limited to, metal ions of lead, indium, antimony, tin, copper, and bismuth. These may be used alone or in combination of two or more types. Further, it is preferable that the perovskite layer has a layered perovskiteFN202501126 structure in which layers of metal halides and layers of aligned organic cation molecules are alternately laminated.

[0037] The perovskite layer may include a sensitizing dye. The sensitizing dye is not particularly limited as long as it is a compound that is photoexcited by the excitation light used, and can be appropriately selected according to the purpose. Examples of the sensitizing dye include, but are not limited to, a metal complex compound, a coumarin compound, a polyene compound, an indoline compound, a thiophene compound, a cyanine dye, a merocyanine dye, a 9-arylxanthene compound, a triarylmethane compound, a phthalocyanine compound, and a porphyrin compound. Of these, a metal complex compound, an indoline compound, a thiophene compound, and a porphyrin compound are preferable.

[0038] The average thickness of the perovskite layer is preferably 50 nm or more and 800 nm or less, more preferably 100 nm or more and 600 nm or less, even more preferably 200 nm or more and 500 nm or less. When the average thickness of the perovskite layer is 50 nm or more, light absorption by the perovskite layer is not so low as to result in insufficient carrier generation, and when it is 800 nm or less, the transport efficiency of carriers generated by light absorption is not further reduced.

[0039] Examples of a method for forming the perovskite layer include, but are not limited to, a method in which a solution in which a metal halide, an alkylamine halide, and the like are dissolved or dispersed is applied, and then the solution is dried by heater heating or gas blowing. Other examples of the method for forming the perovskite layer include, but are not limited to, a two-stage precipitation method in which a solution in which a metal halide is dissolved or dispersed is applied and dried, and then the dried product is immersed in a solution in which an alkylamine halide is dissolved to form a perovskite compound. Other examples of the method for forming the perovskite layer further include, but are not limited to, a method in which a solution in which a metal halide and an alkylamine halide are dissolved or dispersed is applied while adding a poor solvent (solvent with low solubility) for the perovskite compound to precipitate crystals. Further, other examples of the method for forming the perovskite layer include, but are not limited to, a method of depositing a metal halide in a gas filled with methylamine or the like. Of these, a method in which a solution in which a metal halide and an alkylamine halide are dissolved or dispersed is applied while adding a poor solvent for the perovskite compound to precipitate crystals, and a method in which a solution in which a metal halide, an alkylamine halide, and the like are dissolved or dispersed is applied and then dried by gas blowing are preferable.

[0040] FN202501126 Examples of a method for applying the solution include, but are not limited to, an immersion method, a spin coating method, a spray method, a dip method, a roller method, an air knife method, and an inkjet method. Examples of a method for forming the perovskite layer include, but are not limited to, a method in which a perovskite compound is mixed with a sensitizing dye, and a method in which the perovskite layer is formed and then a sensitizing dye is adsorbed onto it.

[0041] <<Passivation Layer>> The photoelectric conversion element in the present embodiment may include a passivation layer between the perovskite layer and the hole transport layer described below. By providing the passivation layer, the stability of the photoelectric conversion element is improved.

[0042] The passivation layer preferably includes a compound represented by the following general formula (2). A-X···General formula (2) In the general formula (2), A represents a monovalent cation, and X represents a monovalent anion. By including the compound represented by the general formula (2), the passivation layer is expected to control physical properties of the interface. Note that the compound represented by the general formula (2) is preferably a salt different from the salt constituting the perovskite layer. Examples of A in the general formula (2) include, but are not limited to, an organic cation such as an ammonium cation compound, a pyridinium cation compound, an imidazolinium cation compound, a pyrrolidinium cation compound, and a phosphonium cation compound. Examples of the ammonium cation compound include, but are not limited to, a monoalkylammonium cation, a dialkylammonium cation, a trialkylammonium cation, a tetraalkylammonium cation, a trialkylarylammonium cation, a dialkyldiarylammonium cation, a triarylmethylammonium cation, and a phenethylammonium cation. Examples of the pyridinium cation compound include, but are not limited to, a triarylbenzylpyridinium cation, an N-alkylpyridinium cation, and an N-benzylpyridinium cation. Examples of the imidazolinium cation compound include, but are not limited to, an N-methyl- 2-imidazolinium cation and an N-n-propyl-2-methylimidazolinium cation. Examples of the pyrrolidinium cation compound include, but are not limited to, a 1-ethyl-1- methylpyrrolidinium cation and a 1-n-hexyl-1-methylpyrrolidinium cation. Examples of the phosphonium cation include, but are not limited to, a triisobutylmethylphosphonium cation and a tetra-n-hexyldodecylphosphonium cation. These organic cations may have a substituent. These may be used alone or in combination of two or more types.

[0043] FN202501126 Examples of X in the general formula (2) include, but are not limited to, a halogen anion such as a fluorine anion, a chlorine anion, a bromine anion, or an iodine anion.

[0044] Of these, it is preferable that A in the general formula (2) is a cationic compound having nitrogen, and X is a halogen anion. Specifically, it is more preferable that A in the general formula (2) is a monoalkylammonium cation, a dialkylammonium cation, a trialkylammonium cation, a tetraalkylammonium cation, or a phenethylammonium cation, and that X is a bromine anion or an iodine anion. More specifically, it is particularly preferable that the compound represented by the general formula (2) is 5-aminopentanoic acid hydroiodide, where A is a monoalkylammonium cation and X is an iodide anion.

[0045] The average thickness of the passivation layer is preferably 0.5 nm or more and 100 nm or less, more preferably 1 nm or more and 50 nm or less.

[0046] Examples of a method for forming the passivation layer include a method in which a solution containing the compound represented by the general formula (2) is applied onto the perovskite layer, then dried, and subsequently the hole transport layer is formed thereon. Examples of the solution include, but are not limited to, an aqueous solution and an alcohol solution. Examples of a method for applying the solution include, but are not limited to, an immersion method, an air knife method, a dip method, a spray method, a wire bar method, a spin coating method, a roller coating method, a blade coating method, a gravure coating method, and an inkjet method.

[0047] The passivation layer may be formed by adsorption as a monomolecular layer. The passivation layer may be formed by adsorption as a monomolecular layer. The passivation layer does not need to be distributed uniformly, and may be, for example, in the form of discontinuous islands that exist locally in a plurality of areas. Further, if the photoelectric conversion layer is a perovskite layer, the passivation layer may be distributed in the perovskite layer or the hole transport layer by reacting the compound represented by the general formula (2) with a perovskite compound or a hole transport material. In other words, there is only a need to have an area in which the compound represented by the general formula (2) is present between the perovskite layer in which the compound represented by the general formula (2) is not present and the hole transport layer in which the compound represented by the general formula (2) is not present.

[0048] <<Hole transport layer>> The hole transport layer is a layer that transports holes (positive holes) generated in the perovskite layer to the second electrode described below. For this reason, the hole transport layer is preferably disposed adjacent to the perovskite layer. If the electron transport layer isFN202501126 adjacent to the perovskite layer, it is preferable that the hole transport layer, the perovskite layer, and the electron transport layer are laminated in this order. Further, if the passivation layer is provided, the hole transport layer is preferably disposed adjacent to the passivation layer.

[0049] The hole transport layer includes a solid hole transport material and may further include other solid hole transport materials. It includes other materials such as a dopant material as necessary. The solid hole transport material (hereinafter also simply referred to as “hole transport material”) is not particularly limited as long as it has the property of transporting holes, and can be appropriately selected according to the purpose. Examples thereof include, but are not limited to, an organic compound. Examples of the organic compound include, but are not limited to, a polythiophene compound, a polyphenylene vinylene compound, a polyfluorene compound, a polyphenylene compound, a polyarylamine compound, and a polythiadiazole compound. Examples of the polythiophene compound include, but are not limited to, poly(3- hexylthiophene-2,5-diyl) (hereinafter referred to as “P3HT”), poly(3-n-octyloxythiophene), poly(9,9’-dioctyl-fluorene-co-bithiophene), poly(3,3’’’-didodecyl-quaterthiophene), poly(3,6- dioctylthieno[3,2-b]thiophene), poly(2,5-bis(3-decylthiophene-2-yl)thieno[3,2-b]thiophene), poly(3,4-didecylthiophene-co-thieno[3,2-b]thiophene), poly(3,6-dioctylthieno[3,2- b]thiophene-co-thieno[3,2-b]thiophene), poly(3,6-dioctylthieno[3,2-b]thiophene-co- thiophene), and poly(3,6-dioctylthieno[3,2-b]thiophene-co-bithiophene). Examples of the polyphenylenevinylene compound include, but are not limited to, poly[2- methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3,7- dimethyloctyloxy)-1,4-phenylenevinylene], and poly[(2-methoxy-5-(2-ethylphenyloxy)-1,4- phenylenevinylene)-co-(4,4’-biphenylenevinylene)]. Examples of the polyfluorene compound include, but are not limited to, poly(9,9’- didodecylfluorenyl-2,7-diyl), poly[(9,9-dioctyl-2,7-divinylenefluorene)-alt-co-(9,10- anthracene)], poly[(9,9-dioctyl-2,7-divinylenefluorene)-alt-co-(4,4’-biphenylene)], poly[(9,9- dioctyl-2,7-divinylenefluorene)-alt-co-(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene)], and poly[(9,9-dioctyl-2,7-diyl)-co-(1,4-(2,5-dihexyloxy)benzene)]. Examples of the polyphenylene compound include, but are not limited to, poly[2,5- dioctyloxy-1,4-phenylene] and poly[2,5-di(2-ethylhexyloxy-1,4-phenylene]. Examples of the polyarylamine compound include, but are not limited to, poly[N,N’-bis(4- butylphenyl)-N,N’-bis(phenyl)-benzidine] (hereinafter referred to as “PolyTPD”), poly[(9,9- dioctylfluorenyl-2,7-diyl)-alt-co-(N,N’-diphenyl)-N,N’-di(p-hexylphenyl)-1,4- diaminobenzene], poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(N,N’-bis(4- octyloxyphenyl)benzidine-N,N’-(1, 4-diphenylene)], poly[(N,N’-bis(4- octyloxyphenyl)benzidine-N,N’-(1,4-diphenylene)], poly[(N,N’-bis(4-(2- ethylhexyloxy)phenyl)benzidine-N,N’-(1,4-diphenylene)], poly[phenylimino-1,4-FN202501126 phenylenevinylene-2,5-dioctyloxy-1,4-phenylenevinylene-1,4-phenylene], poly[p-tolylimino- 1,4-phenylenevinylene-2,5-di(2-ethylhexyloxy)-1,4-phenylenevinylene-1,4-phenylene], and poly[4-(2-ethylhexyloxy) phenylimino-1,4-biphenylene]. Examples of the polythiadiazole compound include, but are not limited to, poly[(9,9- dioctylfluorenyl-2,7-diyl)-alt-co-(1,4-benzo(2,1’,3)thiadiazole], and poly(3,4- didecylthiophene-co-(1,4-benzo(2,1’,3)thiadiazole). Of these, the polythiophene compound and the polyarylamine compound are preferable in terms of carrier mobility and ionization potential.

[0050] As a polymer material, a compound having a structural unit of the following general formula (3) is also suitably used.

[0051] [Chemical 1]General formula (3) Ar1in the general formula (3) is an aromatic hydrocarbon group and represents, for example, an aryl group. Examples of the aryl group include, but are not limited to, a phenyl group, a 1-naphthyl group, and a 9-anthracenyl group. The aryl group may have a substituent. Examples of the substituent include, but are not limited to, an alkyl group, an alkoxy group, and an aryl group. Ar2and Ar3in the general formula (3) each independently represent a divalent group of a monocyclic, non-condensed polycyclic, or condensed polycyclic aromatic hydrocarbon group, and represent, for example, an arylene group, a divalent heterocyclic group, or the like. Examples of the arylene group include, but are not limited to, 1,4-phenylene, 1,1’- biphenylene, and 9,9’-di-n-hexylfluorene. Examples of the divalent heterocyclic group include, but are not limited to, 2,5-thiophene. The arylene group and the divalent heterocyclic group may have a substituent. Examples of the substituent include, but are not limited to, an alkyl group, an alkoxy group, and an aryl group. R1and R2in the general formula (3) each independently represent a hydrogen atom, an alkyl group, an aryl group, or the like. Examples of the alkyl group include, but are not limited to, a methyl group and an ethyl group. Examples of the aryl group include, but are not limited to, a phenyl group and a 2-naphthyl group. The alkyl group and the aryl group may have a substituent. Examples of the substituent include, but are not limited to, an alkyl group, an alkoxy group, and an aryl group. Note that n in the general formula (3) represents a natural number of 2 or more.

[0052] FN202501126 The compound having the structural unit of the general formula (3) is preferably a compound having a structural unit of the general formula (4). In this manner, it is possible to achieve the effect of reducing the resistivity of the hole transport layer.

[0053] [Chemical 2]General formula (4) Ar1, Ar2, Ar3, R1, R2, and n in the general formula (4) are the same as those in the general formula (3). Ar4in the general formula (4) represents a divalent group such as benzene, thiophene, biphenyl, anthracene, or naphthalene, which may have a substituent. Examples of the substituent include, but are not limited to, an alkyl group, an alkoxy group, and an aryl group. R3and R4in the general formula (4) each independently represent a hydrogen atom, an alkyl group, an aryl group, or the like. Examples of the alkyl group include, but are not limited to, a methyl group and an ethyl group. Examples of the aryl group include, but are not limited to, a phenyl group and a 2-naphthyl group. The alkyl group and the aryl group may have a substituent. Examples of the substituent include, but are not limited to, an alkyl group, an alkoxy group, and an aryl group.

[0054] The weight-average molecular weight of the compounds having the structural units of the general formula (3) and the general formula (4) is preferably 20,000 or more and 150,000 or less. The weight-average molecular weight of the compounds can be measured by gel permeation chromatography (GPC).

[0055] Examples of the compound having the structural unit of the general formula (4) include the following (A-1) to (A-22). Note that the compound represented by General Formula (1) is not limited to the compounds below. Note that the compound having the structural unit of the general formula (4) is not limited to these.

[0056] [Chemical 3]FN202501126[Chemical 4]FN202501126[Chemical 5]FN202501126

[0057] Other solid hole transport materials may include a low molecular weight hole transport material alone or a mixture of low and high molecular weight materials. The low molecular weight hole transport material is not particularly limited, and examples thereof include, but are not limited to, an oxadiazole compound, a triphenylmethane compound, a pyrazoline compound, a hydrazone compound, a tetraarylbenzidine compound, a stilbene compound, a spirobifluorene compound, and a thiophene oligomer. Of these, a spirobifluorene compound is preferable. Among the spirobifluorene compounds, 2,2’,7,7’-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9’-spirobifluorene (hereinafter referred to as “Spiro-OMeTAD”) is preferable.

[0058] The average thickness of the hole transport layer is preferably 10 nm or more and 1,000 nm or less, more preferably 20 nm or more and 100 nm or less.

[0059] The hole transport layer can be formed directly on the perovskite layer. As a method for forming the hole transport layer, a wet film formation method is preferable, and an inkjet method is more preferable. By using the inkjet method, the hole transport layer can be formed in a desired area. Further, by using multiple inkjet heads, multiple solutions can be applied simultaneously.FN202501126

[0060] Examples of a method for identifying the hole transport material include a method of identifying the hole transport material based on constituent components of the hole transport material of interest using a Fourier transform infrared spectrometer (FT-IR) (e.g., device name: IRTracer-100, manufactured by Shimadzu Corp.). In the hole transport layer, the constituent components of the polymer of the hole transport material exist as residual monomers. Thus, the hole transport material can be identified by identifying the constituent components of the residual hole transport material.

[0061] <<<Dopant material>>> Examples of other materials included in the hole transport layer include a dopant material. The dopant material is not particularly limited and can be appropriately selected according to the purpose. Examples of the dopant material include, but are not limited to, an oxidizing agent.

[0062] The dopant material is not particularly limited and can be appropriately selected according to the purpose. Examples of the dopant material include: iodine; a metal iodide such as lithium iodide, sodium iodide, potassium iodide, cesium iodide, calcium iodide, copper iodide, iron iodide, or silver iodide; a quaternary ammonium salt such as tetraalkylammonium iodide or pyridinium iodide; a metal bromide such as lithium bromide, sodium bromide, potassium bromide, cesium bromide, or calcium bromide; a bromide of quaternary ammonium compound such as tetraalkylammonium bromide or pyridinium bromide; a metal chloride such as copper chloride or silver chloride; a metal acetate such as copper acetate, silver acetate, or palladium acetate; a metal sulfate such as copper sulfate or zinc sulfate; a metal complex such as a cobalt complex, a ferrocyanide-ferricyanide, or a ferrocene-ferricinium ion; a sulfur compound such as sodium polysulfide or alkylthiol-alkyl disulfide; a basic compound such as a viologen dye, hydroquinone, pyridine, 4-t-butylpyridine (tBP), or benzimidazole; and a lithium sulfonyl salt such as lithium bis(trifluoromethane)sulfonylimide (LiTFSI) or lithium bisfluorosulfonylimide (LiFSI). Further, examples of the dopant material include a photoacid generator having a photosensitizing moiety such as a sulfonium salt or an iodonium salt presented in D-01 to D-19. These can be suitably used as the dopant material for the compound represented by the general formula (4).

[0063] [Chemical 6]FN202501126[Chemical 7]FN202501126

[0064] The type of other dopant materials is not particularly limited and can be appropriately selected according to the purpose. Examples thereof include, but are not limited to, tris(4- bromophenyl)ammoniumylhexachloroantimonate, silver hexafluoroantimonate, nitrosonium tetrafluoroborate, and silver nitrate. Note that it is not necessary for the hole transport material to be entirely oxidized by the dopant material, and it is effective if only part of it is oxidized. Further, the dopant material may or may not be taken out of the system after the reaction.

[0065] By including the dopant material in the hole transport layer, it is possible to convert part or all of the hole transport material into radical cations, making it possible to improve the conductivity and enhance the durability and stability of the output characteristics. The mass ratio of the hole transport material to the dopant material in the hole transport layer (hole transport material / dopant material) is not particularly limited and can be appropriately selected according to the purpose. The ratio is preferably 1 or more and 40 or less, more preferably 10 or more and 40 or less, in terms of hole movement.

[0066] The compounds of the dopant material can be identified by using a time-of-flight secondary ion mass spectrometry (TOF-SIMS), a liquid chromatograph mass spectrometer (hereinafterFN202501126 referred to as “LC-MS”), a gas chromatograph mass spectrometer (hereinafter referred to as “GC-MS”), or the like.

[0067] The concentration of the dopant material in the hole transport layer may have a concentration distribution or a concentration gradient. For example, the concentration of the dopant material may be changed in the stacking direction of the laminate, and examples thereof include, but are not limited to, (1) to (4) below. Changing the concentration of the dopant material in the stacking direction of the laminate can also be referred to as changing the concentration of the dopant material in the thickness direction of the hole transport layer. (1) A concentration gradient is provided such that the concentration is high on the photoelectric conversion layer side and low on the second electrode side. (2) A concentration gradient is provided such that the concentration is high on the second electrode side and low on the photoelectric conversion layer side. (3) A concentration gradient is provided such that the concentration is low on the photoelectric conversion layer side, high in the center in the thickness direction of the hole transport layer, and low on the second electrode side. (4) A concentration gradient is provided such that the concentration is high on the photoelectric conversion layer side, low in the center in the thickness direction of the hole transport layer, and high on the second electrode side.

[0068] By providing the concentration gradient to the dopant material in the hole transport layer, it is possible to prevent unintended diffusion of the dopant into layers adjacent to the hole transport layer and to reduce the resistivity of the hole transport layer. As a result, the conductivity can be improved, and the durability and stability of the output characteristics can be enhanced.

[0069] Examples of a method for providing the concentration gradient to the dopant material in the hole transport layer include, but are not limited to, a method of applying the hole transport materials including the dopant materials of different concentrations in multiple steps. Specifically, there is a method in which the concentration gradient of the dopant is provided in the thickness direction of the hole transport layer by alternately applying the hole transport material and the dopant material to form the hole transport layer, while changing the application amount of dopant material with each application. As a method for adjusting the application amount of dopant material, a method is preferably used in which two or more liquids are applied in a pattern using two or more inkjet heads including one for a hole transport material-containing solution and one for a dopant material-containing solution. Specific examples thereof include, but are not limited to: a method for adjusting the discharge amount by changing the driving frequency of the inkjet heads; a method for adjusting the discharge amount by changing the number of nozzles of the discharging inkjet heads; and a method for adjusting the concentration and discharge amount of dopant material to beFN202501126 discharged by preparing dopant material-containing solutions with different concentrations of dopant material and corresponding inkjet heads.

[0070] <Second electrode> The second electrode can be formed on the laminate. Further, the second electrode can be the same as the first electrode. In the case of a forward-type photoelectric conversion element, the laminate includes the electron transport layer, the photoelectric conversion layer, and the hole transport layer in this order on the first electrode, and the second electrode can be provided on the hole transport layer. In the case of a reverse-type photoelectric conversion element, the laminate includes the hole transport layer, the photoelectric conversion layer, and the electron transport layer in this order on the first electrode, and the second electrode can be provided on the electron transport layer. The second electrode includes a side surface portion covering part of a side surface of the laminate in addition to a lamination portion provided on the laminate. The side surface portion of the second electrode is provided so as to cover the laminate along the stacking direction of the laminate at part of the outer periphery of the laminate. The side surface portion of the second electrode included in the photoelectric conversion module is provided so as to face the adjacent photoelectric conversion element with a gap. Specifically, as presented in the photoelectric conversion module in FIG.2 described below, it is preferable that a side surface portion 7a of the second electrode in a photoelectric conversion element 10A is provided so as to cover one side surface of the laminate including the reference numerals 2 to 6, and face a high resistance layer 8 provided in an adjacent photoelectric conversion element 10B with a gap G. By providing the side surface portion to the second electrode, it becomes possible to electrically connect the first electrode of the adjacent photoelectric conversion element and the second electrode.

[0071] Examples of a material of the second electrode include, but are not limited to, metal, a carbon compound, a conductive metal oxide, and a conductive polymer. Examples of the metal include, but are not limited to, platinum, gold, silver, copper, and aluminum. Examples of the carbon compound include, but are not limited to, graphite, fullerene, a carbon nanotube, and graphene. Examples of the conductive metal oxide include, but are not limited to, ITO, FTO, and ATO. Examples of the conductive polymer include, but are not limited to, polythiophene and polyaniline. These may be used alone or in combination of two or more types.

[0072] In the case of a forward-type photoelectric conversion element, the second electrode can be formed on the hole transport layer, as appropriate, by a method such as coating, lamination, vapor deposition, a CVD method, or bonding. It is preferable that at least one of the firstFN202501126 electrode and the second electrode is substantially transparent, and it is more preferable that the first electrode side is transparent. By making the first electrode side transparent, light can enter from the first electrode side.

[0073] <High resistance layer> The high resistance layer is provided between adjacent photoelectric conversion elements. When the adjacent photoelectric conversion elements are defined as a first photoelectric conversion element and a second photoelectric conversion element, the high resistance layer is provided between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element.

[0074] The high resistance layer preferably covers at least part of a side surface of the hole transport layer. The side surface of the hole transport layer refers to the outer edge of the hole transport layer along the stacking direction of each layer of the photoelectric conversion element. The high resistance layer is preferably provided so as to cover the side surface of the laminate facing the side surface portion of the second electrode. In this manner, even when multiple photoelectric conversion elements are electrically connected, it is possible to prevent electrical conduction to the second electrode of the adjacent photoelectric conversion element.

[0075] The high resistance layer may be provided so as to cover the entire side surface of the hole transport layer, so as to cover part of the side surface of the laminate, so as to cover the entire side surface of the laminate, or so as to cover part of the side surfaces of the laminate and the second electrode. By covering at least part of the side surface of the hole transport layer with the high resistance layer, short circuits between adjacent photoelectric conversion elements can be prevented when a photoelectric conversion module is produced. Here, “covering the entire side surface of the hole transport layer” refers to covering the entire outer edge of the hole transport layer along the stacking direction of each layer of the photoelectric conversion element. From the viewpoint of preventing short circuits between adjacent photoelectric conversion elements, the high resistance layer is provided preferably so as to cover the entire side surface of the hole transport layer, more preferably, so as to cover the entire side surface of the laminate.

[0076] It is preferable that the high resistance layer is provided so as to face the side surface portion of the second electrode of the adjacent photoelectric conversion element when a photoelectric conversion module is produced. As a result, it is possible to prevent short circuits between adjacent photoelectric conversion elements.

[0077] The shape and size of the high resistance layer are not particularly limited as long as it can prevent short circuits between adjacent photoelectric conversion elements when aFN202501126 photoelectric conversion module is produced, and can be appropriately selected according to the purpose.

[0078] The high resistance layer is not particularly limited as long as it has a higher resistivity than the hole transport layer, and can be appropriately selected according to the purpose. Similarly, in the case of the high resistance layer of an inverted-type photoelectric conversion element, the effect of the present application can be obtained as long as the resistivity is higher than that of the hole transport layer. When the resistivity of the high resistance layer is higher than that of the hole transport layer, short circuits between adjacent photoelectric conversion elements can be prevented. By preventing short circuits between adjacent photoelectric conversion elements, power generation efficiency can be maintained even after exposure to high illuminance light for a long period of time.

[0079] As for the resistivity of the high resistance layer, the difference between the resistivity of the high resistance layer (hereinafter referred to as “Ra”) and the resistivity of the hole transport layer (hereinafter referred to as “Rb”), defined as (Ra-Rb), is preferably 1.0×108Ωcm or more, more preferably 1.5×108Ωcm or more and 20.0×108Ωcm or less, even more preferably 2.5×108Ωcm or more and 10.0×108Ωcm or less.

[0080] The resistivity can be measured using a scanning spread resistance microscope (SSRM). Examples of a method for measuring the resistivity of the high resistance layer include a method of cutting the photoelectric conversion element in a direction perpendicular to the stacking direction and measuring the cross-section of the high resistance layer using SSRM.

[0081] Examples of a material for the high resistance layer include, but are not limited to, an insulating material and a hole transport material. Examples of the insulating material include, but are not limited to, a ceramic and a synthetic resin. Examples of the ceramic include, but are not limited to, aluminum oxide, zirconium oxide, aluminum nitride, silicon nitride, forsterite, steatite, sialon, and mica. Examples of the synthetic resin include, but are not limited to, polyethylene, polyvinyl chloride, polystyrene, polyester, a phenolic resin, a melamine resin, an epoxy resin, and a silicone resin. As the hole transport material, the compounds described for the hole transport material can be appropriately used. If the hole transport material is used as the material for the high resistance layer, the same material as the hole transport material applied to the hole transport layer may be applied.

[0082] FN202501126 It is preferable that the hole transport layer includes the hole transport material and the dopant material, and the high resistance layer includes the hole transport material but does not include the dopant material. By not including the dopant material in the high resistance layer, the resistivity can be increased more than that of the hole transport layer including the dopant material. Here, the hole transport material included in the hole transport layer and the hole transport material included in the high resistance layer may be the same or different, but from the viewpoint of facilitating production, it is preferable that they are the same.

[0083] It is preferable that the high resistance layer is provided starting from the end of the laminate and within a range of 200 μm or less from the end. The width of the high resistance layer is preferably 20 μm or more and 200 μm or less. Here, the width of the high resistance layer refers to the length of the high resistance layer in a direction perpendicular to the stacking direction in which each layer of the photoelectric conversion element is laminated.

[0084] <Other members> <<Second substrate>> The photoelectric conversion element and photoelectric conversion module in the present embodiment may include a second substrate. The second substrate is not particularly limited and can be selected appropriately according to the purpose, and can be the same as the first substrate. The second substrate is disposed opposite the first substrate so as to sandwich the laminate.

[0085] The shape, structure, and size of the second substrate are not particularly limited and can be selected appropriately according to the purpose. A material for the second substrate is not particularly limited and can be selected appropriately according to the purpose, and can be the same as that of the first substrate.

[0086] Examples of the second substrate include a substrate such as glass, a plastic film, or a ceramic. An uneven portion may be formed in a bonding portion between the second substrate and a sealing member to improve adhesion. Examples of a method for forming the uneven portion include, but are not limited to, a sandblasting method, a water blasting method, abrasive paper, a chemical etching method, and a laser processing method. As a means for increasing the adhesion between the second substrate and the sealing member described below, for example, organic matter on the surface may be removed, or the hydrophilicity may be enhanced. Examples of the means for removing organic matter on the surface of the second substrate include, but are not limited to, UV ozone cleaning and oxygen plasma treatment.

[0087] <<Sealing member>>FN202501126 The photoelectric conversion element in the present embodiment preferably includes a sealing member that shields the photoelectric conversion layer from the external environment of the photoelectric conversion element. A material for the sealing member is not particularly limited as long as it can reduce the intrusion of excess moisture, oxygen, and the like from the external environment into the sealed interior, and it can be appropriately selected according to the purpose. Further, the sealing member has the effect of preventing mechanical damage caused by external pressure.

[0088] Examples of a sealing method include “frame sealing” in which a sealing member is provided around the periphery of the power generation area constituted by the photoelectric conversion layer of the photoelectric conversion element, and bonded to the second substrate, and “surface sealing” in which a sealing member is provided over the entire power generation area and bonded to the second substrate. In the “frame sealing”, a hollow space is formed inside the sealing, allowing the amount of moisture and oxygen inside the sealing to be properly adjusted. Further, since the second electrode is not in contact with the sealing member, the impact of electrode peeling can be reduced. The “surface sealing” is highly effective in preventing the intrusion of excessive moisture and oxygen from the outside. Further, since the adhesive area with the sealing member is large, the sealing strength is high, making it particularly suitable when a flexible substrate is used as the first substrate.

[0089] A material for the sealing member is not particularly limited and can be appropriately selected according to the purpose. Examples thereof include, but are not limited to, a cured resin and a low-melting glass resin. The cured resin is not particularly limited as long as it is a resin that is cured by light or heat, and can be appropriately selected according to the purpose. Examples thereof include, but are not limited to, a cured acrylic resin and a cured epoxy resin. The low-melting glass resin is used for sealing by first applying the resin, then performing firing to decompose the resin components, and then melting it with an infrared laser or the like while bringing it into close contact with the glass substrate. At this time, the low-melting glass components diffuse into the metal oxide layer and are physically bonded to it, thereby achieving high sealing performance. Further, since the resin components have decomposed, no outgassing occurs as with ultraviolet-curable resins, making it effective for improving the durability of the photoelectric conversion element. Generally, the low-melting glass resin is commercially available as glass frit or glass paste, and these can be effectively used.

[0090] Examples of a method for forming the sealing member include, but are not limited to, a dispensing method, a wire bar method, a spin coating method, a roller coating method, a bladeFN202501126 coating method, a gravure coating method, relief printing, offset printing, intaglio printing, rubber printing, and screen printing.

[0091] Hereinafter, an example of the photoelectric conversion element of the present embodiment is described with reference to the drawings. Note that the present invention is not limited to these, and for example, the number, position, shape, and the like of the members in the following configurations, even if not described in the present embodiment, are also included within the scope of the present invention.

[0092] FIG.1 is a schematic diagram of a photoelectric conversion element of a first embodiment. FIG.1 is a diagram illustrating a forward-type photoelectric conversion element. A photoelectric conversion element 10 in FIG.1 includes a first electrode 2, a laminate including an electron transport layer 3, a perovskite layer 4 as a photoelectric conversion layer, a passivation layer 5, and a hole transport layer 6 in this order, a second electrode 7 provided opposite the first electrode 2 across the laminate, and a high resistance layer 8. The first electrode 2 is in contact with the electron transport layer 3. The electron transport layer 3 is in contact with the perovskite layer 4. The perovskite layer 4 is in contact with the passivation layer 5. The passivation layer 5 is in contact with the hole transport layer 6. The hole transport layer 6 is in contact with the second electrode 7. The second electrode 7 includes a side surface portion 7a that covers part of a side surface of the laminate. The side surface portion 7a, which communicates with the second electrode 7 that is in contact with the hole transport layer 6, extends to a first substrate 1, thereby enabling electrical connection with the first electrode 2 of the adjacent photoelectric conversion element. The high resistance layer 8 is provided so as to cover part of side surfaces of the electron transport layer 3, the perovskite layer 4, the passivation layer 5, and the hole transport layer 6. The high resistance layer 8 may be also provided so as to cover a side surface of the second electrode 7.

[0093] The high resistance layer 8 of the first embodiment is provided so as to cover the side surface of the laminate facing the side surface portion 7a of the second electrode 7 across the hole transport layer 6. By positioning the high resistance layer 8 on the side surface of the laminate facing the side surface portion 7a of the second electrode 7 across the hole transport layer 6, short circuits between adjacent photoelectric conversion elements can be prevented when a photoelectric conversion module is produced.

[0094] The high resistance layer 8 has a higher resistivity than the hole transport layer 6 of the adjacent photoelectric conversion element. That is, the high resistance layer 8 has a lower hole mobility than the hole transport layer 6. By having the resistivity of the high resistance layer 8 higher than the resistivity of the hole transport layer 6, short circuits between adjacent photoelectric conversion elements can be prevented.

[0095] FN202501126 FIG.2 is a schematic diagram illustrating a photoelectric conversion module according to the first embodiment. A photoelectric conversion module 100 illustrated in FIG.2 includes the first substrate 1 and photoelectric conversion elements 10A to 10C. In the photoelectric conversion module 100, a plurality of photoelectric conversion elements of the first embodiment are electrically connected in series. The photoelectric conversion module 100 includes a gap G between two adjacent photoelectric conversion elements. The photoelectric conversion module 100 is provided so that the side surface portion 7a of the second electrode 7 and the high resistance layer 8 face each other across the gap G. The side surface portion 7a, which communicates with the second electrode 7 in contact with the hole transport layer 6, extends to the first substrate 1, thereby forming electrical connection to the first electrode 2 of the adjacent photoelectric conversion element. The photoelectric conversion module 100 illustrated in FIG.2 includes three photoelectric conversion elements (10A to 10C), but the number of photoelectric conversion elements is not limited to three and can be appropriately selected according to the purpose. The photoelectric conversion elements 10A, 10B, and 10C may be collectively referred to as the photoelectric conversion elements 10.

[0096] The first electrode 2 of the photoelectric conversion element 10B is electrically connected to the second electrode 7 of the adjacent photoelectric conversion element 10A. The first electrode 2 of the photoelectric conversion element 10C is electrically connected to the second electrode 7 of the adjacent photoelectric conversion element 10B. The first electrode 2 and the second electrode 7 of the photoelectric conversion element 10 each have a conduction path to electrode extraction terminals.

[0097] The photoelectric conversion element 10B including the high resistance layer 8 can prevent short circuits with the adjacent photoelectric conversion element 10A. The photoelectric conversion element 10C including the high resistance layer 8 can prevent short circuits with the adjacent photoelectric conversion element 10B.

[0098] FIG.3 is a schematic diagram illustrating a photoelectric conversion module according to the first embodiment. The photoelectric conversion module 100 illustrated in FIG.3 includes the first substrate 1, a plurality of photoelectric conversion elements 10, a second substrate 101, and a sealing member 102. The second substrate 101 is disposed opposite the first substrate 1 so as to sandwich the photoelectric conversion elements 10. The sealing member 102 is disposed between the first substrate 1 and the second substrate 101.

[0099] FIG.4 is a schematic diagram of a photoelectric conversion element of a second embodiment. FIG.4 is a diagram illustrating a forward-type photoelectric conversion element. In theFN202501126 second embodiment, the description of the contents overlapping with the description of the first embodiment is omitted as appropriate.

[0100] A photoelectric conversion element 20 illustrated in FIG.4 differs from the first embodiment in that the high resistance layer 8 is provided to cover the entire side surface of the laminate including the first electrode 2, the electron transport layer 3, the perovskite layer 4, the passivation layer 5, and the hole transport layer 6 in this order. The high resistance layer 8 is provided between the laminate and the side surface portion 7a of the second electrode 7. By providing the high resistance layer 8 so as to cover the entire side surface of the laminate, short circuits between adjacent photoelectric conversion elements can be further prevented.

[0101] FIG.5 is a schematic diagram illustrating a photoelectric conversion module according to the second embodiment. FIG.5 is a diagram illustrating a plurality of photoelectric conversion elements of the second embodiment electrically connected in series. FIG.6 is a top view of the photoelectric conversion module illustrated in FIG.5. FIG.7 is a top view of the photoelectric conversion module illustrated in FIG.5 cut along a dotted line A-A’. A photoelectric conversion module 200 illustrated in FIG.5 to FIG.7 includes the first substrate 1 and photoelectric conversion elements 20A to 20E. The photoelectric conversion module 200 illustrated in FIG.5 to FIG.7 includes five photoelectric conversion elements (20A to 20E), but the number of photoelectric conversion elements is not limited to five and can be appropriately selected according to the purpose. The photoelectric conversion elements 20A to 20E may be collectively referred to as photoelectric conversion elements 20.

[0102] The high resistance layer 8 is provided so as to contact the entire side surfaces of the electron transport layer 3, the perovskite layer 4, the passivation layer 5, and the hole transport layer 6. This makes it possible to further prevent short circuits between adjacent elements.

[0103] FIG.8 is a schematic diagram of a photoelectric conversion element of a third embodiment. FIG.8 is a diagram illustrating a reverse-type photoelectric conversion element. In the third embodiment, the description of the contents overlapping with the description of the first embodiment and the second embodiment is omitted as appropriate. A reverse-type photoelectric conversion element 30 includes the first electrode 2, the laminate including the hole transport layer 6, the perovskite layer 4, the passivation layer 5, and the electron transport layer 3 in this order, the second electrode 7 provided opposite the first electrode 2 across the laminate, and the high resistance layer 8. The second electrode 7 includes the side surface portion 7a that covers part of the side surface of the laminate. The high resistance layer 8 is provided so as to cover part of the side surface of the laminate. The high resistance layer 8 may be also provided so as to cover a side surface of the second electrode 7.FN202501126

[0104] The high resistance layer 8 of the reverse-type photoelectric conversion element 30 has a higher resistivity than the hole transport layer 6. Since the resistivity of the high resistance layer 8 is higher than the resistivity of the hole transport layer 6, short circuits between adjacent photoelectric conversion elements can be prevented when a photoelectric conversion module is produced. The high resistance layer 8 of the reverse-type photoelectric conversion element 30 includes an insulating material.

[0105] FIG.9 is a schematic diagram of a photoelectric conversion element of a fourth embodiment. FIG.9 is a diagram illustrating a forward-type photoelectric conversion element. In the fourth embodiment, the description of the contents overlapping with the description of the first embodiment to the third embodiment is omitted as appropriate.

[0106] A photoelectric conversion element 40 illustrated in FIG.9 include the first electrode 2, the laminate including the electron transport layer 3, the perovskite layer 4, the passivation layer 5, and the hole transport layer 6 in this order, the second electrode 7 provided opposite the first electrode 2 across the laminate, and the high resistance layer 8. The second electrode 7 includes the side surface portion 7a covering part of the side surface of the laminate. The fourth embodiment differs from the first embodiment in that the high resistance layer 8 is provided so as to cover the side surface portion 7a of the second electrode. That is, the high resistance layer 8 is provided in contact with the surface of the side surface portion 7a of the second electrode opposite to the surface where the laminate and the second electrode are in contact with each other.

[0107] FIG.10 is a schematic diagram illustrating a photoelectric conversion module according to the fourth embodiment. FIG.10 is a diagram illustrating a plurality of photoelectric conversion elements of the fourth embodiment electrically connected in series. A photoelectric conversion module 400 illustrated in FIG.10 includes the first substrate 1 and photoelectric conversion elements 40A to 40C. At least one photoelectric conversion element 40A includes the high resistance layer 8 that covers at least part of the side surface of the second electrode 7 (side surface portion 7a) that faces the side surface of the laminate of the adjacent photoelectric conversion element 40B. By providing the high resistance layer 8 so as to cover part of the side surface of the second electrode 7 (side surface portion 7a) that faces the side surface of the laminate of the adjacent photoelectric conversion element, short circuits between adjacent photoelectric conversion elements can be further prevented. Here, having the high resistance layer between the second electrode 7 of the first photoelectric conversion element 40A and the laminate of the second photoelectric conversion element 40B means that the high resistance layer 8 is provided between the side surface portion 7a of the second electrode 7 of the first photoelectric conversion element 40A and the surface of theFN202501126 laminate of the second photoelectric conversion element 40B on the side closer to the first photoelectric conversion element 40A.

[0108] The high resistance layer 8 of the fourth embodiment is preferably provided in contact with either the side surface portion 7a of the second electrode of the first photoelectric conversion element 40A or the side surface of the laminate of the second photoelectric conversion element 40B. With this configuration, the high resistance layer can be easily formed. Further, in the photoelectric conversion element of the fourth embodiment, it is preferable that the high resistance layer 8 is not filled between the side surface portion 7a of the second electrode of the first photoelectric conversion element 40A and the surface of the second photoelectric conversion element 40B on the side closer to the first photoelectric conversion element 40A. In other words, it is preferable that the gap G exists between the side surface portion 7a of the second electrode of the first photoelectric conversion element and the surface of the second photoelectric conversion element on the side closer to the first photoelectric conversion element 40A. The presence of the gap G can further prevent short circuits between the photoelectric conversion elements.

[0109] The high resistance layer 8 of the fourth embodiment preferably includes an insulating material. The high resistance layer 8 including the insulating material can enhance the effect of preventing short circuits between the photoelectric conversion elements.

[0110] The high resistance layer 8 of the fourth embodiment illustrated in FIG.10 can be formed by forming the second electrode 7 and the side surface portion 7a, and then applying a material including the insulating material to the positions in contact with the second electrode 7 and the side surface portion 7a.

[0111] By including the high resistance layer 8 between the second electrode 7 of the first photoelectric conversion element 40A and the laminate of the second photoelectric conversion element 40B, short circuits can be prevented that may occur between the second electrode 7 of the first photoelectric conversion element 40A and the laminate of the second photoelectric conversion element.

[0112] <Applications> The photoelectric conversion element and / or photoelectric conversion module of the present embodiment functions as a self-sustaining power source. By using the photoelectric conversion module of the present embodiment, power can be generated by light irradiation. This makes it possible to operate electronic devices even in places without power supply equipment, to wear and carry them around, and to operate electronic devices in places where battery replacement is difficult without having to replace the batteries. Further, since the photoelectric conversion module of the present embodiment is lightweight and thin, it offersFN202501126 high flexibility in installation and provides significant advantages when worn or carried around.

[0113] The photoelectric conversion element and / or photoelectric conversion element module of the present embodiment can be applied to power supply devices in combination with a circuit board or the like that controls generated current. Examples of electronic devices that use the power supply devices include, but are not limited to, an electronic desktop calculator, a wristwatch, a mobile phone, an electronic organizer, and electronic paper. Further, when combined with an auxiliary power supply, a secondary battery, or the like, which extends the continuous operating time of a rechargeable or battery-powered electrical appliance, the power supply device including the photoelectric conversion element of the present embodiment can be used as a power source that is available even at night. Further, the power supply device can also be used for an IoT device, an artificial satellite, and the like, as a self- sustaining power source that does not require battery replacement, power wiring, and the like.

[0114] (Electronic device) The photoelectric conversion element and / or photoelectric conversion module of the present embodiment can be used in an electronic device. The electronic device of the present embodiment includes the photoelectric conversion element and / or photoelectric conversion module of the present embodiment, and a device that operates with the power generated by the photoelectric conversion module through photoelectric conversion. The electronic device further includes other devices as necessary.

[0115] FIG.9 is a schematic diagram illustrating an example of an electronic device in which the photoelectric conversion module of the present embodiment is combined with a device that operates with the power generated by the photoelectric conversion module through photoelectric conversion. When the photoelectric conversion element is irradiated with light, electricity is generated, and power can be extracted. A circuit of the electronic device can then operate using this power.

[0116] The electronic device illustrated in FIG.9 includes the photoelectric conversion module 100 of the present embodiment, a power supply IC (Integrated Circuit) 202, a power storage device 203, and an equipment circuit 209. The power supply IC 202 and the power storage device 203 do not have to be provided in the electronic device. Examples of the power storage device 203 include, but are not limited to, an electric double layer capacitor, a lithium ion capacitor, and a lithium ion secondary battery. By providing the power supply IC 202 between the photoelectric conversion module 100 and the equipment circuit 209, the electronic device can supply a stable voltage to the equipment circuit. By providing the power storage device 203 between the power supply IC 202 and the equipment circuit 209, the electronic device can charge the power storage device 203 with surplus power from theFN202501126 photoelectric conversion element. This makes it possible to supply power stored in the power storage device 203 to the equipment circuit 209 and allow the electronic device to stably operate even when the illuminance is too low or when the photoelectric conversion module 100 is not irradiated with light.

[0117] In this manner, the electronic device using the photoelectric conversion element and / or photoelectric conversion module of the present embodiment can operate even in an environment without a power source, and does not require battery replacement. Further, the electronic device in which the photoelectric conversion module of the present embodiment is combined with the equipment circuit can be stably driven when combined with the power supply IC and the power storage device.

[0118] (Power supply module) The photoelectric conversion element and / or photoelectric conversion module of the present embodiment can be used in a power supply module. The power supply module of the present embodiment includes the photoelectric conversion element and / or photoelectric conversion module of the present embodiment and the power supply IC. The power supply module further includes other devices as necessary.

[0119] FIG.10 is a schematic diagram illustrating an example of the power supply module in which the photoelectric conversion module 100 of the present embodiment is combined with the power supply IC 202 and the power storage device 203. The power supply module illustrated in FIG.10 includes the photoelectric conversion module 100 of the present embodiment, the power supply IC 202, and the power storage device 203. The power storage device 203 does not need to be provided in the power supply module. Regarding the power supply module, the description of the contents overlapping with the description of the electronic device is omitted as appropriate.

[0120] (Building material) The photoelectric conversion element and / or photoelectric conversion module of the present embodiment can be used in a building material. Examples of the building material include, but are not limited to, building-integrated photovoltaics (BIPV) and building-attached photovoltaics (BAPV). BIPV are building materials in which a functional material constituting the exterior wall of the building and a solar power generation device are integrated. BAPV are solar cells which are attached to the exterior wall of the building to generate solar power. Examples of the shape of BAPV include, but are not limited to, a film shape that can be attached to the exterior wall of the building.

[0121] FN202501126 FIG.11 is a schematic diagram illustrating an example of the building material using the photoelectric conversion module of the present embodiment. A building material 1000 illustrated in FIG.11 includes the photoelectric conversion module 100 of the present embodiment and a pair of opposing glasses 1001. The building material using the photoelectric conversion module of the present embodiment includes other members as necessary. The pair of opposing glasses 1001 are disposed so as to sandwich the photoelectric conversion module 100. A space A is provided between the photoelectric conversion module 100 and one of the glasses 1001. The space A may be filled with an inert gas. Examples of the inert gas include, but are not limited to, nitrogen and argon.

[0122] The building material of the present embodiment may be used for both indoor and outdoor applications. When the building material of the present embodiment is used as window glass, the photoelectric conversion module 100 and the glasses 1001 are preferably transparent.

[0123] Note that the building material using the photoelectric conversion module of the present embodiment is not limited to these, and for example, the number, position, shape, and the like of the members, not described in the present embodiment, are also included in the scope of the present invention.

[0124] (Method for producing photoelectric conversion element and method for producing photoelectric conversion module) A method of producing a photoelectric conversion element of the present embodiment includes a step of forming a first electrode, a step of forming a laminate by laminating an electron transport layer, a photoelectric conversion layer, and a hole transport layer, a step of forming a second electrode on the laminate, and a step of forming a high resistance layer that covers at least part of a side surface of the hole transport layer or at least part of a side surface of the second electrode. The method further includes other steps as necessary.

[0125] A method for producing a photoelectric conversion module of the present embodiment includes a step of forming a first photoelectric conversion element and a second photoelectric conversion element, each including a first electrode, a laminate, and a second electrode in this order on a substrate, and a step of forming a high resistance layer between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element. The laminate includes an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer. The second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element are electrically connected.FN202501126 The resistivity of the high resistance layer is higher than the resistivity of the hole transport layer of the second photoelectric conversion element. The photoelectric conversion element and photoelectric conversion module of the present embodiment can be suitably produced by the method for producing the photoelectric conversion element and method for producing the photoelectric conversion module of the present embodiment, respectively.

[0126] <Step of forming first electrode> The step of forming a first electrode is a step of forming a first electrode on a substrate. As for a method for forming the first electrode, the techniques described above for the photoelectric conversion element can be appropriately selected.

[0127] <Step of forming laminate> The step of forming a laminate is a step of forming a laminate by laminating an electron transport layer, a photoelectric conversion layer, and a hole transport layer. As for a method for forming the electron transport layer, the photoelectric conversion layer, and the hole transport layer, the techniques described above for the photoelectric conversion element can be appropriately selected.

[0128] <Step of forming second electrode> The step of forming a second electrode is a step of forming a second electrode on a laminate. As for a method for forming the second electrode, the techniques described above for the photoelectric conversion element can be appropriately selected.

[0129] <Step of forming high resistance layer> The step of forming a high resistance layer is a step of forming a high resistance layer that covers at least part of the side surface of the hole transport layer or at least part of the side surface of the second electrode. Specifically, examples thereof include, but are not limited to: the first embodiment (FIGs.1 and 2), in which the high resistance layer 8 covers the side surface of the laminate facing the side surface portion 7a of the second electrode 7 across the hole transport layer 6; the second embodiment (FIGs.4 and 5), in which the high resistance layer 8 is provided between the laminate and the side surface portion 7a of the second electrode 7; and the fourth embodiment (FIGs.9 and 10), in which the high resistance layer 8 is provided in contact with the surface of the side surface portion 7a of the second electrode on the side opposite to the surface where the laminate and the second electrode are in contact. Further, the step may also be applied to a reverse-type photoelectric conversion element and photoelectric conversion module (e.g., the third embodiment). When covering at least part of the side surface of the hole transport layer, the high resistance layer may be formed simultaneously with, before, or after the formation of the hole transport layer.

[0130] FN202501126 As a method for applying the dopant material to the hole transport layer and / or the high resistance layer, a wet addition method is preferable, and an inkjet method is more preferable. By using the inkjet method, the dopant material can be applied to the desired area. Further, by using multiple inkjet heads, multiple solutions can be applied, allowing the resistivity of the hole transport layer and the high resistance layer in the targeted areas to be adjusted as desired.

[0131] Examples of a method for forming the hole transport layer and / or the high resistance layer include, but are not limited to, a method in which one of the following combinations is applied to a region where the hole transport layer and / or the high resistance layer is to be formed: (1) a combination of two or more mixed solutions each including a dopant materials and a hole transport material, with different dopant concentrations (hereinafter referred to as a “mixed solution”); (2) a combination of a solution containing a hole transport material without a dopant material (hereinafter referred to as a “hole transport solution”) or a solution containing a dopant material without a hole transport material (hereinafter referred to as a “dopant solution”) and the mixed solution; and (3) a combination of the hole transport solution and the dopant solution. These methods can be used to avoid the application of the dopant material to an undesired area and to prevent short circuits between adjacent photoelectric conversion elements. As the method for forming the hole transport layer and / or the high resistance layer, it is preferable to apply, to the region where the hole transport layer and / or the high resistance layer is to be formed, one of the following combinations: (1) a combination of two mixed solutions with different dopant concentrations; (2) a combination of the hole transport solution or the dopant solution and one mixed solution; and (3) a combination of the hole transport solution and the dopant solution. From the viewpoint of resistivity control, it is more preferable to apply (3) the dopant solution and the hole transport solution to the region where the hole transport layer and / or the high resistance layer is to be formed. Note that the dopant concentration refers to the concentration of the dopant material in the dopant solution or the mixed solution. In other words, it is preferable that the solution applied to the region where the high resistance layer is to be formed has the lower dopant concentration than the solution applied to the region where the hole transport layer is to be formed.

[0132] Examples of the method of applying two mixed solutions with different dopant concentrations include, but are not limited to, a method in which the mixed solution with a high dopant concentration is applied to the region where the hole transport layer is to be formed, and the mixed solution with a low dopant concentration is applied to the region where the high resistance layer is to be formed.

[0133] Examples of the method of applying the dopant solution and one mixed solution include, but are not limited to, a method of applying the dopant solution first and then the mixed solution,FN202501126 a method of applying the mixed solution first and then the dopant solution, and a method of simultaneously applying the mixed solution and the dopant solution from different inkjet heads. It is preferable to apply the dopant solution to the region where the hole transport layer is to be formed and to apply the mixed solution to the regions where the hole transport layer and the high resistance layer are to be formed. Examples of the method of applying the hole transport solution and one mixed solution include, but are not limited to, a method of applying the hole transport solution first and then the mixed solution, a method of applying the mixed solution first and then the hole transport solution, and a method of simultaneously applying the mixed solution and the hole transport solution from different inkjet heads. It is preferable to apply the hole transport solution to the regions where the hole transport layer and the high resistance layer are to be formed and to apply the mixed solution to the region where the hole transport layer is to be formed. That is, the mixed solution is applied either to the region on the photoelectric conversion layer where the hole transport layer is to be formed, or onto the hole transport solution that has been applied to the photoelectric conversion layer. As a result, the hole transport layer contains the dopant material while the high resistance layer does not contain the dopant material, making it possible to achieve a higher resistivity of the high resistance layer than that of the hole transport layer. This allows the high resistance layer to be provided so as to cover at least part of the side surface of the hole transport layer.

[0134] As the method of applying the dopant solution and the hole transport solution, application can be performed by replacing the mixed solution described in the method of applying the hole transport solution and one mixed solution with the dopant solution. With this method, the hole transport layer contains the dopant material while the high resistance layer does not contain the dopant material, making it possible to achieve a higher resistivity of the high resistance layer than that of the hole transport layer. This allows the high resistance layer to be provided so as to cover at least part of the side surface of the hole transport layer.

[0135] In other words, examples of the method of applying the solution to the regions where the hole transport layer and the high resistance layer are to be formed include, but are not limited to, (1) a method of applying the solution to the regions where the hole transport layer and the high resistance layer are to be formed, and then applying the solution to the region where either the hole transport layer or the high resistance layer is to be formed, (2) a method of applying the solution to the region where either the hole transport layer or the high resistance layer is to be formed, and then applying the solution to the regions where the hole transport layer and the high resistance layer are to be formed, and (3) a method of applying different solutions to the region where the hole transport layer is to be formed and the region where the high resistance layer is to be formed. By applying the solution such that the region where the hole transport layer is to be formed is limited to only the center of the regions where the hole transport layer and the high resistanceFN202501126 layer are to be formed, or by applying the solution such that the region where the high resistance layer is to be formed is limited to only the outer periphery of the regions where the hole transport layer and the high resistance layer are to be formed, it is possible to form the high resistance layer that covers the side surface of the hole transport layer.

[0136] The dopant concentration in the solution containing the dopant material is preferably 30 mg / mL or less, more preferably 20 mg / mL or less, even more preferably 0.05 mg / mL or more and 10 mg / mL or less, particularly preferably 0.1 mg / mL or more and 10 mg / mL or less.

[0137] The dopant concentration can be measured by identifying the dopant material using TOF- SIMS, LC-MS, GC-MS, or the like, and then quantifying it using liquid chromatography, gas chromatography, or the like.

[0138] The high resistance layer may be formed by applying an insulating material. Examples of a method for applying the insulating material include, but are not limited to, an immersion method, an air knife method, a dip method, a spray method, a wire bar method, a spin coating method, a roller method, and an inkjet method. Of these, an inkjet method is preferable.

[0139] In one embodiment, the high resistance layer may be provided so as to cover at least part of the side surface of the hole transport layer, so as to contact the entire side surface of the hole transport layer, so as to contact part of the side surfaces of the electron transport layer, the photoelectric conversion layer, the hole transport layer, and the second electrode, or so as to contact the entire side surfaces of the electron transport layer, the photoelectric conversion layer, the hole transport layer, and the second electrode.

[0140] Further, in the embodiment in which the high resistance layer is provided so as to cover at least part of the side surface of the second electrode, it is preferable that the high resistance layer is provided in contact with the surface of the side surface portion of the second electrode opposite to the surface where surface where the laminate and the second electrode are in contact with each other, and that the high resistance layer is formed by applying a material including the insulating material at positions in contact with the second electrode and the side surface portion of the second electrode after the second electrode and the side surface portion of the second electrode are formed. [Examples]

[0141] Hereinafter, the present invention is described with reference to Examples and Comparative examples. It should be noted that the present invention is not limited to the individually illustrated examples.

[0142] <Synthesis example>FN202501126 <<Synthesis of polymer compound>> A polymer compound (A-01) was synthesized as a hole transport material by the following reaction.

[0143] [Chemical 8]

[0144] Into a 100 mL four-necked flask, the above-mentioned dialdehyde compound (0.66 g, 2.0 mmol) and diphosphonate (1.02 g, 2.0 mmol) were placed, the flask was purged with nitrogen, and tetrahydrofuran (75 mL) was added to the flask. To this solution, a 1.0 mol / L tetrahydrofuran solution of potassium tert-butoxide (6.75 mL, 6.75 mmol) was added dropwise, and the mixture was stirred at room temperature for 2 hours. Thereafter, to terminate the chain ends, diethyl benzylphosphonate and benzaldehyde were added sequentially, and stirring was continued for another 2 hours. Acetic acid (1 mL) was added to terminate the reaction, and the solution was washed with water. After removing the solvent by distillation under reduced pressure, the product was purified by reprecipitation using tetrahydrofuran and methanol to yield 0.95 g of polymer compound (A-01).

[0145] When the obtained polymer compound (A-01) was measured by gel permeation chromatography (GPC), the number-average molecular weight in terms of polystyrene was 8,500, and the weight-average molecular weight was 20,000.

[0146] (Example 1) <Production of photoelectric conversion element module> As a first substrate and / or a first electrode, a pre-patterned ITO glass substrate was used. The ITO glass substrate had an ITO thickness of 150 nm and a surface resistance of 15 Ω / sq.

[0147] FN202501126 A tin oxide colloid solution (manufactured by Taki Chemical Co., Ltd., CERAMACE S-8) was patterned and deposited on the pre-patterned ITO glass substrate using an inkjet method, followed by heating and drying at 120°C for 10 min to obtain an electron transport layer. In this process, the patterning deposition was carried out with the program set to avoid applying the tin oxide colloid solution to the divided areas. Note that the thickness of the electron transport layer was set to 30 nm.

[0148] Next, lead(II) iodide (0.53 g), lead(II) bromide (0.07 g), formamidinium iodide (0.21 g), methylammonium bromide (0.01 g), and cesium iodide (0.02 g) were added to N,N- dimethylformamide (0.8 mL) and dimethyl sulfoxide (0.2 mL) and stirred. The resulting stirred solution was patterned and deposited on the electron transport layer using an inkjet method. Then, the entire substrate was immersed in a chlorobenzene bath to form a film, followed by heating and drying at 150°C for 30 min to obtain a perovskite layer (photoelectric conversion layer). Note that the thickness of the perovskite layer was set to 400 nm.

[0149] Next, on the formed perovskite layer, a solution of 5-aminopentanoic acid hydroiodide dissolved in 2-propanol (1 mM) was patterned and deposited using an inkjet method to form a passivation layer.

[0150] Next, the polymer compound (A-01) (38.1 mg) prepared in the synthesis example was dissolved in chlorobenzene (3.0 mL). The obtained hole transport solution was applied by an inkjet method onto the passivation layer and over the entire side surface of the resulting laminate, thereby providing the hole transport material.

[0151] Next, as a dopant material, 4-isopropyl-4’-methyldiphenyliodonium tetrakis(pentafluorophenyl)borate (D-19) was dissolved in 2-propanol to 1 mg / mL to prepare a dopant solution. The prepared dopant solution was applied by an inkjet method onto the hole transport material provided on the passivation layer to form a hole transport layer. Note that the thickness of the hole transport layer was set to 60 nm.

[0152] The dopant solution was applied only to the region where the hole transport layer was to be formed on the passivation layer. The region containing the dopant material on the passivation layer is referred to as the hole transport layer, and the hole transport material provided on part of the side surface of the resulting laminate was not provided with the dopant material. This region, to which only the hole transport solution was applied, is referred to as a high resistance layer.

[0153] Finally, gold was vacuum-deposited to a thickness of 60 nm on the above-mentioned laminate using a deposition mask to obtain a second electrode. In this manner, a solar cell module of Example 1 was obtained as a forward-type photoelectric conversion module illustrated in FIG.FN202501126 5. Note that the photoelectric conversion module was produced in which three photoelectric conversion elements were electrically connected in series.

[0154] <Evaluation of photoelectric conversion characteristics> The photoelectric conversion module produced in Example 1 was irradiated with light under conditions of AM 1.5 G, 100 mW / cm² using a solar simulator (manufactured by Eiko Sokki. Inc., SS-80XIL), and its current-voltage characteristics were measured using a solar cell evaluation system (manufactured by Systemhouse Sunrise Corp., product name: Excel add-in measurement software W32-B2900SOL4M-R). The photoelectric conversion efficiency in the photoelectric conversion characteristics (initial characteristics) was calculated from the obtained current-voltage curve. Four identical photoelectric conversion element modules were produced, and the average value of the obtained conversion efficiencies was taken as the photoelectric conversion efficiency η (%). Modules that exhibited short circuits were excluded when calculating the average photoelectric conversion efficiency.

[0155] <Measurement of resistivity> The resistivity of the hole transport layer and the high resistance layer was measured using an element in which the hole transport layer and the high resistance layer were formed on a pre- patterned ITO glass substrate, and then gold was vacuum-deposited to a thickness of 60 nm using a deposition mask. The resistance values of the hole transport layer and the high resistance layer were measured using the element thus produced by impedance analyzer (manufactured by Toyo Corp., product name: High Performance Electrochemical Measurement System SP-300) (measurement mode: voltage controlled impedance measurement, measurement temperature: 23°C, measurement frequency: 7 MHz to 500 mHz, AC amplitude: 10 mV). The resistivity of the hole transport layer and the high resistance layer was calculated by multiplying the obtained resistance value by the element area and then dividing the resulting value by the element film thickness.

[0156] <Evaluation of insulation properties> The insulation properties of the photoelectric conversion module produced in Example 1 were evaluated. The insulation properties were judged based on the presence or absence of short circuits during the evaluation of the photoelectric conversion element characteristics, and were evaluated based on the following evaluation criteria. The results are presented in Table 1. -Evaluation criteria- Good: no short circuits Poor: one or more short circuits

[0157] (Examples 2 to 8)FN202501126 The photoelectric conversion elements and photoelectric conversion modules of Examples 2 to 8 were produced and evaluated in the same manner as in Example 1, except that the hole transport material and the dopant material in Example 1 were changed to the hole transport material and the dopant material presented in Table 1. The results are presented in Table 1. Note that the abbreviations in Table 1 are as follows. ·P3HT: Poly(3-hexylthiophene-2,5-diyl) (manufactured by Sigma-Aldrich) ·PolyTPD: Poly[N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)-benzidine] (manufactured by Sigma-Aldrich) ·Spiro-OMeTAD: 2,2’,7,7’-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9’-spirobifluorene (manufactured by Sigma-Aldrich)

[0158] (Example 9) The photoelectric conversion element and photoelectric conversion module of Example 9 were produced and evaluated in the same manner as in Example 1, except that the solution in which the hole transport material A-01 was dissolved in Example 1 was replaced with a solution in which 216.9 mg of Spiro-OMeTAD was dissolved in 3.0 mL of chlorobenzene, and the solution in which the dopant material D-19 was dissolved was replaced with a solution in which 12.8 mg of lithium bis(trifluoromethane)sulfonylimide (LiTFSI, manufactured by Sigma-Aldrich) and 18.3 mg of 4-t-butylpyridine (tBP, manufactured by Sigma-Aldrich) were dissolved in 31 mL of 2-propanol. The results are presented in Table 1.

[0159] (Examples 10 to 12) The photoelectric conversion elements and photoelectric conversion modules of Examples 10 to 12 were produced and evaluated in the same manner as in Example 1, except that the concentration of the dopant material in the dopant solution in Example 1 was changed as presented in Table 1. The results are presented in Table 1.

[0160] [Table 1]FN202501126

[0161] <Changes in high resistance layer formation step>FN202501126 The photoelectric conversion elements and photoelectric conversion modules of Examples 13 to 16 were produced and evaluated in the same manner as in Example 1, except that the high resistance layer formation step in Example 1 was changed as follows. Further, the photoelectric conversion elements and photoelectric conversion modules of Examples 17 to 19 were produced and evaluated in the same manner as in Example 1, except that the high resistance layer was formed using the insulating material instead of the hole transport material in Example 1. The results are presented in Table 2.

[0162] (Examples 13 and 14) <High resistance layer formation step> After the dopant solution with the dopant concentration presented in Table 2 was pattern- coated onto the region where the hole transport layer was to be formed, the hole transport solution was pattern-coated onto the regions where the hole transport layer and the high resistance layer were to be formed.

[0163] (Examples 15 and 16) <High resistance layer formation step> Two inkjet heads, one for the hole transport solution and one for the dopant solution, were used to simultaneously pattern-coat two liquids. Note that the dopant solution used in this case was a chlorobenzene solution containing the dopant material with the concentration presented in Table 2. The dopant solution was pattern-coated on the region where the hole transport layer was to be formed, and the hole transport solution was pattern-coated on the regions where the hole transport layer and the high resistance layer were to be formed.

[0164] (Example 17) The photoelectric conversion element and photoelectric conversion module of Example 17 were produced and evaluated in the same manner as in Example 1, except that the hole transport material in Example 1 was changed to a propylene glycol solution containing 40% by mass of aluminum oxide (manufactured by Merck & Co., Inc.) (aluminum oxide 40% solution).

[0165] (Example 18) The photoelectric conversion element and photoelectric conversion module of Example 18 were produced and evaluated in the same manner as in Example 1, except that the hole transport material in Example 1 was changed to a propylene glycol solution containing 40% by mass of zirconium oxide (manufactured by Merck & Co., Inc.) (zirconium oxide 40% solution).

[0166] (Example 19)FN202501126 The photoelectric conversion element and photoelectric conversion module of Example 19 were produced and evaluated in the same manner as in Example 1, except that the hole transport material in Example 1 was changed to a chlorobenzene solution containing 10% by mass of polystyrene (manufactured by Merck & Co., Inc.) (polystyrene 10% solution).

[0167] [Table 2]

[0168] FN202501126 (Example 20) The photoelectric conversion element and photoelectric conversion module of Example 20 were produced and evaluated in the same manner as in Example 1, except that in the hole transport layer formation step of Example 1, two inkjet heads, one for the hole transport material-containing solution and one for the dopant material-containing solution, were used to simultaneously pattern-coat the two liquids, thereby forming the hole transport layer 6 in which dopant concentration gradient was formed. Specifically, during pattern coating, the discharge amounts of the inkjet head for the hole transport material-containing solution and the inkjet head for the dopant material-containing solution were continuously changed to produce a dopant concentration distribution in the hole transport layer, such that the dopant concentration gradient was high on the photoelectric conversion layer side and low on the second electrode side in the stacking direction of the laminate (z-axis direction presented in FIG.5), as presented in Table 3. The results are presented in Table 3.

[0169] (Example 21) The photoelectric conversion element and photoelectric conversion module of Example 21 were prepared and evaluated in the same manner as in Example 1, except that, in Example 20, the hole transport layer 6 was formed such that the dopant concentration gradient was low on the photoelectric conversion layer side and high on the second electrode side in the stacking direction of the laminate (z-axis direction presented in FIG.5). The results are presented in Table 3.

[0170] (Example 22) The photoelectric conversion element and photoelectric conversion module of Example 22 were produced and evaluated in the same manner as in Example 1, except that, in Example 20, the hole transport layer 6 was formed such that the dopant concentration gradient was low on the photoelectric conversion layer side, high in the center of the hole transport layer, and low on the second electrode side in the stacking direction of the laminate (z-axis direction presented in FIG.5). The results are presented in Table 3.

[0171] (Example 23) The photoelectric conversion element and photoelectric conversion module of Example 23 were produced and evaluated in the same manner as in Example 1, except that, in Example 20, the hole transport layer 6 was formed such that the dopant concentration gradient was high on the photoelectric conversion layer side, low in the center of the hole transport layer, and high on the second electrode side in the stacking direction of the laminate (z-axis direction presented in FIG.5). The results are presented in Table 3.

[0172] [Table 3]FN202501126

[0173] (Comparative example 1) The photoelectric conversion element and photoelectric conversion element module of Comparative example 1 were produced and evaluated in the same manner as in Example 1,FN202501126 except that, in Example 1, the high resistance layer was not provided, and the dopant solution was pattern-coated over the entire surface of the hole transport material provided on the passivation layer. The results are presented in Table 4.

[0174] (Comparative example 2) The photoelectric conversion element and photoelectric conversion element module of Comparative example 2 were produced and evaluated in the same manner as in Comparative example 1, except that, in Comparative example 1, the photoelectric conversion element module was produced without applying the dopant solution onto the hole transport material. The results are presented in Table 4.

[0175] (Comparative example 3) The photoelectric conversion element and photoelectric conversion element module of Comparative example 3 were produced and evaluated in the same manner as in Comparative example 1, except that, in Comparative example 1, instead of the dopant solution and the hole transport solution, a solution in which the dopant material (D-19) (3.81 mg) and the hole transport material (A-01) (38.1 mg) were dissolved in chlorobenzene (3.0 mL) was used, and the resulting mixed solution was inkjet coated onto the perovskite layer to produce the hole transport layer. The results are presented in Table 4.

[0176] [Table 4]FN202501126

[0177] As is evident from Examples 1 to 16, the photoelectric conversion modules of Examples 1 to 16, which include the high resistance layer 8 covering at least part of the side surface of the hole transport layer 6, exhibit excellent insulation properties. Consequently, even whenFN202501126 multiple photoelectric conversion elements are electrically connected, short circuits between the photoelectric conversion elements can be prevented, thereby maintaining good photoelectric conversion efficiency. On the other hand, in Comparative Examples 1 and 3, when the high resistance layer was not provided, and instead the hole transport layer was provided in the region where the high resistance layer was to be formed, insulation properties could not be ensured. In Comparative example 2, in addition to the absence of the high resistance layer, the hole transport layer had high resistivity and poor hole transportability, resulting in a low photoelectric conversion efficiency of 10% or less, which was outside the practical range.

[0178] Further, the photoelectric conversion modules of Examples 17 to 19, in which the high resistance layer 8 is formed using the insulating material instead of the hole transport material, have even better insulation properties, and thus, even when multiple photoelectric conversion elements are electrically connected, short circuits between the photoelectric conversion elements can be prevented, and good photoelectric conversion efficiency can be maintained. The photoelectric conversion modules of Examples 20 to 23, in which a dopant concentration gradient is provided in the hole transport layer in the stacking direction of the laminate, also have excellent insulation properties, and thus, even when multiple photoelectric conversion elements are electrically connected, short circuits between the photoelectric conversion elements can be prevented, and good photoelectric conversion efficiency can be maintained.

[0179] The present invention has been described above based on each embodiment, but the present invention is not limited to the requirements described in the above embodiments. These aspects can be changed without departing from the gist of the present invention, and can be appropriately determined depending on the application thereof.

[0180] Aspects of the present invention are, for example, as follows. <Aspect 1> A photoelectric conversion module including: a substrate; a plurality of photoelectric conversion elements on the substrate, the plurality of photoelectric conversion elements including a first photoelectric conversion element and a second photoelectric conversion element, each of the photoelectric conversion elements including a first electrode, a laminate, and a second electrode in this order on the substrate, the laminate including an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer, the second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element are electrically connected; and a high resistance layer between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element, the high resistance layer having a resistivity higher than that of the hole transport layer of the second photoelectric conversion element.FN202501126 <Aspect 2> The photoelectric conversion module according to the <Aspect 1>, in which at least a part of a side surface of the hole transport layer is covered in at least one of the photoelectric conversion elements. <Aspect 3> The photoelectric conversion module according to the <Aspect 1>, in which the high resistance layer includes a hole transport material or an insulating material. <Aspect 4> The photoelectric conversion module according to the <Aspect 3>, in which the hole transport layer includes the hole transport material and a dopant material, and the high resistance layer includes the hole transport material but does not include the dopant material. <Aspect 5> The photoelectric conversion module according to any of the <Aspect 1> to <Aspect 4>, in which the difference between the resistivity of the high resistance layer and the resistivity of the hole transport layer is 1.0×108Ωcm or more. <Aspect 6> The photoelectric conversion module according to any of the <Aspect 1> to <Aspect 5>, in which the high resistance layer covers the entire side surface of the laminate of the second photoelectric conversion element. <Aspect 7> The photoelectric conversion module according to any of the <Aspect 1> to <Aspect 6>, in which the second electrode includes a side surface portion covering a part of the side surface of the laminate, and the side surface portion of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element are in contact with each other. <Aspect 8> The photoelectric conversion module according to any of the <Aspect 1> to <Aspect 7>, in which the plurality of photoelectric conversion elements are electrically connected in series. <Aspect 9> A method for producing a photoelectric conversion module, including: forming a first photoelectric conversion element and a second photoelectric conversion element on a substrate, each of the first and second photoelectric conversion elements including a first electrode, a laminate, and a second electrode in this order, the laminate including an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer, the second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element being electrically connected; and forming a high resistance layer between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element, the highFN202501126 resistance layer having a resistivity higher than that of a hole transport layer of the second photoelectric conversion element. <Aspect 10> The method according to the <Aspect 9>, in which the forming the first photoelectric conversion element and the second photoelectric conversion element includes: forming the hole transport layer and the high resistance layer, including: applying one of the following combinations (1) to (3) to regions where the hole transport layer and the high resistance layer are to be formed: (1) a combination of two mixed solutions each including a dopant material and a hole transport material, with different concentrations of the dopant material; (2) a combination of a hole transport solution including the hole transport material or a dopant solution including the dopant material and one or more of the mixed solutions; and (3) a combination of the hole transport solution and the dopant solution. <Aspect 11> The method according to the <Aspect 10>, in which the forming the hole transport layer and the high resistance layer includes, using the combination of the hole transport solution and the dopant solution: applying the hole-transport solution to a region where the hole transport layer is to be formed on the photoelectric conversion layer and to a region where the high resistance layer is to be formed being at least a part of a side surface of the hole transport layer; and applying the dopant solution to the region where the hole transport layer is to be formed. <Aspect 12> An electronic device including the photoelectric conversion module according to any of the <Aspect 1> to <Aspect 8>. <Aspect 13> A power supply module including the photoelectric conversion module according to any of the <Aspect 1> to <Aspect 8>. <Aspect 14> A building material including the photoelectric conversion module according to any of the <Aspect 1> to <Aspect 8>.

[0181] The above-described embodiments are illustrative and do not limit the present invention. Thus, numerous additional modifications and variations are possible in light of the above teachings. For example, elements and / or features of different illustrative embodiments may be combined with each other and / or substituted for each other within the scope of the present invention. Any one of the above-described operations may be performed in various other ways, for example, in an order different from the one described above.

[0182] This patent application is based on and claims priority to Japanese Patent Application Nos. 2024-180219 and 2025-114756, filed on October 15, 2024 and July 7, 2025, respectively, inFN202501126 the Japan Patent Office, the entire disclosure of each of which is hereby incorporated by reference herein. [Reference Signs List]

[0183] 1 First substrate 2 First electrode 3 Electron transport layer 4 Perovskite layer 5 Passivation layer 6 Hole transport layer 7 Second electrode 7a Side surface portion of second electrode 8 High resistance layer 10, 20, 30, 40, 10A to 10C, 20A to 20E, 40A to 40C Photoelectric conversion element 100, 200, 400 Photoelectric conversion module 101 Second substrate 102 Sealing member 202 Power supply IC 203 Power storage device 209 Equipment circuit 1000 Building material 1001 Glass

Claims

FN202501126 [CLAIMS] 1. A photoelectric conversion module comprising: a substrate; a plurality of photoelectric conversion elements on the substrate, the plurality of photoelectric conversion elements including a first photoelectric conversion element and a second photoelectric conversion element, each of the photoelectric conversion elements including a first electrode, a laminate, and a second electrode in this order on the substrate, the laminate including an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer, the second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element being electrically connected; and a high resistance layer between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element, the high resistance layer having a resistivity higher than that of the hole transport layer of the second photoelectric conversion element.

2. The photoelectric conversion module according to claim 1, wherein the high resistance layer covers at least a part of the hole transport layer of the second photoelectric conversion element.

3. The photoelectric conversion module according to claim 1, wherein the high resistance layer includes a hole transport material or an insulating material.

4. The photoelectric conversion module according to claim 3, wherein the hole transport layer includes the hole transport material and a dopant material, and the high resistance layer includes the hole transport material but does not include any dopant material.

5. The photoelectric conversion module according to any one of claims 1 to 4, wherein a difference between a resistivity of the high resistance layer and a resistivity of the hole transport layer is 1.0×108Ωcm or more.

6. The photoelectric conversion module according to any one of claims 1 to 5, wherein the high resistance layer covers an entire side surface of the laminate of the second photoelectric conversion element.FN202501126 7. The photoelectric conversion module according to any one of claims 1 to 6, wherein the second electrode includes a side surface portion covering a part of a side surface of the laminate, and the side surface portion of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element are in contact with each other.

8. The photoelectric conversion module according to any one of claims 1 to 7, wherein the plurality of photoelectric conversion elements are electrically connected in series.

9. A method for producing a photoelectric conversion module, the method comprising: forming a first photoelectric conversion element and a second photoelectric conversion element on a substrate, each of the first and second photoelectric conversion elements including a first electrode, a laminate, and a second electrode in this order, the laminate including an electron transport layer, a hole transport layer, and a photoelectric conversion layer between the electron transport layer and the hole transport layer, the second electrode of the first photoelectric conversion element and the first electrode of the second photoelectric conversion element being electrically connected; and forming a high resistance layer between the second electrode of the first photoelectric conversion element and the laminate of the second photoelectric conversion element, the high resistance layer having a resistivity higher than that of a hole transport layer of the second photoelectric conversion element.

10. The method according to claim 9, wherein the forming the first photoelectric conversion element and the second photoelectric conversion element includes: forming the hole transport layer and the high resistance layer, including: applying one of following combinations (1) to (3) to regions where the hole transport layer and the high resistance layer are to be formed: (1) a combination of two or more mixed solutions each including a dopant material and a hole transport material, with different concentrations of the dopant material; (2) a combination of a hole transport solution including the hole transport material or a dopant solution including the dopant material and one or more of the mixed solutions; and (3) a combination of the hole transport solution and the dopant solution.FN202501126 11. The method according to claim 10, wherein the forming the hole transport layer and the high resistance layer includes, using the combination of the hole transport solution and the dopant solution: applying the hole transport solution to a region where the hole transport layer is to be formed on the photoelectric conversion layer and a region where the high resistance layer is to be formed being at least a part of a side surface of the hole transport layer; and applying the dopant solution to a region where the hole transport layer is to be formed.

12. An electronic device comprising the photoelectric conversion module according to any one of claims 1 to 8.

13. A power supply module comprising the photoelectric conversion module according to any one of claims 1 to 8.

14. A building material comprising the photoelectric conversion module according to any one of claims 1 to 8.

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